Isolation baffle device for MOCVD reaction chamber

Abstract

The application provides an isolation baffle device of an MOCVD reaction chamber, which comprises a ring-shaped baffle, a sandwich flow channel suitable for containing cooling liquid inside the ring-shaped baffle, a liquid injection channel at one end of the sandwich flow channel, a liquid outlet channel at the other end of the sandwich flow channel, a plurality of injection passages for connecting the sandwich flow channel and the liquid injection channel, and a plurality of discharge passages for connecting the sandwich flow channel and the liquid outlet channel; the ring-shaped baffle comprises a plurality of ring-shaped section parts with different inner diameters from top to bottom, so that the ring-shaped baffle is in a stepped shape; and the sandwich flow channel is in a trapezoidal shape in the vertical direction. The application adjusts the positions of the cooling liquid injection and discharge in the isolation baffle device, so that the flow range of the cooling liquid in the sandwich flow channel is larger and the distribution is more uniform, the problem of uneven cooling of the isolation baffle is improved, the uniformity of the temperature field distribution inside the reaction chamber is improved, the shape of the sandwich flow channel is designed, the dead angle in the cooling liquid flow process is reduced, and the cooling effect is further enhanced.

Description

Technical Field

[0001] This invention relates to the field of metal-organic chemical vapor deposition equipment, and more particularly to an isolation baffle device for an MOCVD reaction chamber. Background Technology

[0002] MOCVD (Metal-organic Chemical Vapor Deposition) is a novel vapor-phase epitaxial growth technology developed based on vapor-phase epitaxy (VPE). MOCVD operates via thermal decomposition reactions. The most crucial aspect of MOCVD reaction chamber design lies in the design of the internal flow and temperature fields. Only with appropriately designed flow and temperature fields can the reaction process proceed smoothly, improving the utilization rate of the reactant source materials and enhancing the quality of the deposited film. Therefore, shutters are typically installed in MOCVD equipment to influence the flow and temperature field distribution within the reaction chamber.

[0003] See the instruction manual appendix Figure 1a Several process gases required for the MOCVD epitaxial process enter the reaction chamber 10 through the gas inlet device of the upper cover 20. The flow field of the process gases is restricted by the isolation baffle device 30 surrounding the side wall of the reaction chamber, guiding the gas flow onto the substrate tray 40. A chemical reaction occurs on the substrate surface to deposit a thin film. Afterward, a vacuum pump is used to exhaust the reaction gases (and reaction byproducts, etc.) from the evacuation port at the bottom of the reaction chamber 10. The side wall of the reaction chamber 10 is provided with an opening for inserting or removing the substrate tray 40. The isolation baffle device 30 can move between a first position with the opening closed and a second position with the opening open.

[0004] The isolation baffle device 30 typically has a coolant pipe inside. Coolant is introduced into the isolation baffle device 30 through the corresponding coolant inlet on the upper cover 20 to cool the isolation baffle device 30. Its water-cooling structure is usually designed so that coolant is injected from the top of the isolation baffle device 30 and flows out from the top of the isolation baffle device 30. (See attached diagram) Figure 1b .

[0005] An analysis of the application of water-cooled structures for existing isolation baffles is provided (see Appendix). Figure 1cThe study found that due to the top-in, top-out cooling structure, the coolant flow rate in the upper layer inside the isolation baffle was significantly higher than that in the lower layer, resulting in poor flow uniformity. This led to uneven cooling of the isolation baffle, with the lower layer temperature being much higher than the upper layer, causing an uneven temperature field within the reaction chamber and affecting the uniformity of epitaxial layer growth on the substrate surface. Furthermore, with prolonged use, the uneven cooling made the deformation of the isolation baffle unpredictable, potentially impacting the repeatability of material growth and interfering with the process's ability to determine the cause of repeatability issues. This also affected the service life of the isolation baffle itself.

[0006] Therefore, it is necessary to provide a new isolation baffle for the MOCVD reaction chamber to solve the above-mentioned problems existing in the prior art. Summary of the Invention

[0007] The purpose of this invention is to provide an isolation baffle device for an MOCVD reaction chamber to improve the problem of uneven cooling of the isolation baffle device.

[0008] To achieve the above objectives, the present invention provides an isolation baffle device for an MOCVD reaction chamber, comprising: an annular baffle, a jacketed flow channel located inside the annular baffle suitable for containing coolant, an injection channel located at one end of the jacketed flow channel, an outlet channel located at the other end of the jacketed flow channel, and a plurality of injection passages connecting the jacketed flow channel and the injection channel, and a plurality of discharge passages connecting the jacketed flow channel and the outlet channel; the annular baffle includes a plurality of annular segments with different inner diameters from top to bottom, so that the annular baffle is stepped; the jacketed flow channel is trapezoidal in cross-section in the vertical direction, so that the jacketed flow channel is frustum-shaped.

[0009] Specifically, the interlayer flow channel is provided with multiple injection points of the injection path, and the injection points of the multiple injection paths are evenly distributed from top to bottom along the interlayer flow channel.

[0010] For example, the feature is that when the interlayer flow channel connects to multiple injection channels, the multiple injection channels are parallel to each other; when the interlayer flow channel connects to multiple discharge channels, the multiple discharge channels are parallel to each other.

[0011] In one possible embodiment, the injection channels are all located on the vertical cross-section of the interlayer flow channel, and each injection channel forms an angle with the cross-section of the interlayer flow channel, the angle being greater than or equal to 30°.

[0012] In one possible embodiment, the included angle is greater than or equal to 60° and less than or equal to 120°.

[0013] In one possible embodiment, the included angle is greater than or equal to 90° and less than or equal to 100°.

[0014] Optionally, the angles formed by the injection passages and the cross-sections of the interlayer flow channels are all equal.

[0015] In one possible embodiment, the number of injection channels is one, and the number of outlet channels is one; the line connecting the injection channel and the outlet channel intersects the central axis of the interlayer flow channel.

[0016] In one specific embodiment, the number of injection pathways is equal to the number of discharge pathways.

[0017] For example, the injection passage and the discharge passage are symmetrically arranged at both ends of the interlayer flow channel about the central axis of the interlayer flow channel.

[0018] The beneficial effects of the isolation baffle device for the MOCVD reaction chamber provided by this invention are as follows: Multiple coolant injection channels are provided at one end of the interlayer flow channel inside the isolation baffle device, and multiple coolant discharge channels are provided at the other end of the interlayer flow channel. This allows coolant to flow into and out of the interlayer flow channel from different positions, thereby adjusting the flow velocity distribution of the coolant within the interlayer flow channel. This results in a larger flow range and more uniform distribution of the coolant within the interlayer flow channel. Furthermore, the annular baffle of the isolation baffle device is designed with a multi-segment structure to reduce the generation of dead zones and eddies during gas flow within the reaction chamber. Simultaneously, the interlayer flow channel within the annular baffle is designed as a frustum shape, rather than a stepped shape identical to the annular baffle, which reduces dead angles during coolant flow and further enhances the cooling effect. Compared with existing technologies, the design of this invention significantly improves the problem of uneven cooling in isolation baffle devices, thereby improving the uniformity of the temperature field distribution inside the reaction chamber. This is beneficial for improving the uniformity of epitaxial layer growth on the substrate surface. Meanwhile, the cooling effect of the isolation baffle device is significantly improved, the isolation baffle is not easily deformed, and the interference with the repeatability of the epitaxial growth process is reduced. Attached Figure Description

[0019] Figure 1a This is a schematic diagram of the structure of an MOCVD reaction chamber in the prior art;

[0020] Figure 1b This is a schematic diagram of the isolation baffle device in the MOCVD reaction chamber in the prior art;

[0021] Figure 1c This is a simulation diagram of the coolant flow effect in a prior art isolation baffle device;

[0022] Figures 2a to 2b This is a schematic diagram of the isolation baffle device of the MOCVD reaction chamber in Embodiment 1 of the present invention and a corresponding simulation diagram of the coolant flow effect;

[0023] Figures 3a to 3bThis is a schematic diagram of the isolation baffle device of the MOCVD reaction chamber in Embodiment 2 of the present invention and a corresponding simulation diagram of the coolant flow effect;

[0024] Figures 4a to 4b This is a schematic diagram of the isolation baffle device of the MOCVD reaction chamber in Embodiment 3 of the present invention and a corresponding simulation diagram of the coolant flow effect;

[0025] Figures 5a to 5b This is a schematic diagram of the isolation baffle device of the MOCVD reaction chamber in Embodiment 4 of the present invention and a corresponding simulation diagram of the coolant flow effect;

[0026] Figures 6a to 6b This is a schematic diagram of the isolation baffle device of the MOCVD reaction chamber in Embodiment 5 of the present invention and a corresponding simulation diagram of the coolant flow effect;

[0027] Figures 7a to 7b This is a schematic diagram of the isolation baffle device of the MOCVD reaction chamber in Embodiment 6 of the present invention and a corresponding simulation diagram of the coolant flow effect;

[0028] Figures 8a to 8b This is a schematic diagram of the isolation baffle device of the MOCVD reaction chamber in Embodiment 7 of the present invention and a corresponding simulation diagram of the coolant flow effect.

[0029] Figure label:

[0030] 100 - Annular baffle; 1 - Interlayer flow channel; 21 - Outer cylindrical baffle; 22 - Inner cylindrical baffle; 31 - Injection channel; 32 - Discharge channel; 41 - Injection passage; 42 - Discharge passage; 5 - Central axis of the interlayer flow channel. Detailed Implementation

[0031] To make the objectives, technical solutions, and advantages of this invention clearer, the technical solutions in the embodiments of this invention will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some, not all, of the embodiments of this invention. All other embodiments obtained by those skilled in the art based on the embodiments of this invention without inventive effort are within the scope of protection of this invention. Unless otherwise defined, the technical or scientific terms used herein should have the ordinary meaning understood by those skilled in the art. The terms "comprising" and similar expressions used herein mean that the element or object preceding the word covers the element or object listed following the word and its equivalents, but do not exclude other elements or objects.

[0032] To address the problems existing in the prior art, embodiments of the present invention provide an isolation baffle device for an MOCVD reaction chamber.

[0033] See Figure 2a The isolation baffle device of the MOCVD reaction chamber includes: an annular baffle 100, a jacketed flow channel 1 located inside the annular baffle 100 suitable for containing coolant, an injection channel 31 located at one end of the jacketed flow channel 1, an outlet channel 32 located at the other end of the jacketed flow channel 1, and multiple injection passages 41 connecting the jacketed flow channel 1 and the injection channel 31, and multiple discharge passages 42 connecting the jacketed flow channel 1 and the outlet channel 32. The annular baffle 100 includes multiple annular segments with different inner diameters from top to bottom, so that the annular baffle 100 is stepped. The jacketed flow channel is trapezoidal in cross-section in the vertical direction, so that the jacketed flow channel is frustum-shaped.

[0034] In the isolation baffle device of the MOCVD reaction chamber in this embodiment, multiple injection channels 41 are provided at one end of the interlayer flow channel 1, and multiple discharge channels 42 are provided at the other end. This allows coolant to be injected into the interlayer flow channel 1 from different positions and discharged from different positions within the interlayer flow channel 1, thereby adjusting the flow velocity distribution of the coolant within the interlayer flow channel 1. This results in a larger flow range and more uniform distribution of the coolant within the interlayer flow channel 1. The annular baffle 100 is designed with a multi-segment structure to reduce the generation of dead zones and eddies within this area during flow within the reaction chamber. The interlayer flow channel 1 within the annular baffle 100 is designed as a frustum shape, rather than a stepped shape identical to the annular baffle 100, which reduces dead zones during coolant flow and further enhances the cooling effect. Compared with the prior art, the design of this embodiment significantly improves the problem of uneven cooling in the isolation baffle device and enhances the uniformity of the temperature field distribution within the reaction chamber, thus contributing to the improvement of the uniformity of epitaxial layer growth on the substrate surface. Meanwhile, the cooling effect of the isolation baffle device is significantly improved, the isolation baffle is not easily deformed, and the interference with the repeatability of the epitaxial growth process is reduced.

[0035] In one possible embodiment, at least two connecting rods are mounted on the top of the annular baffle 100. Each connecting rod has an injection channel 31 for introducing coolant into the interlayer flow channel 1 inside the annular baffle 100 or an outlet channel 32 for discharging coolant from the interlayer flow channel 1 inside the annular baffle. The connecting rod includes at least one injection channel 31 and at least one outlet channel 32. At one end of the interlayer flow channel 1, the interlayer flow channel 1 and the injection channel 31 are connected by multiple injection passages 41. At the other end of the interlayer flow channel 1, the interlayer flow channel 1 and the outlet channel 32 are connected by multiple discharge passages 42.

[0036] In one specific embodiment, when the isolation baffle device of the MOCVD reaction chamber is provided with two channels for injecting or discharging coolant into or out of the interlayer flow channel 1, one is an injection channel 31 and the other is an outlet channel 32. Preferably, the injection channel 31 and the outlet channel 32 are distributed opposite to each other, and the line connecting the injection channel 31 and the outlet channel 32 intersects the central axis 5 of the interlayer flow channel. This ensures that after the coolant flows into the interlayer flow channel 1 through the injection channel 31, the range of the interlayer flow channel 1 it passes through is relatively uniform when flowing towards the outlet channel 32 in either direction, which is beneficial for the uniform distribution of coolant.

[0037] Furthermore, the injection passage 41 and the discharge passage 42 can be symmetrically distributed at both ends of the interlayer flow channel 1 about the central axis 4 of the interlayer flow channel 1. That is, the number of passages included in the injection passage 41 and the discharge passage 42, their height, and the angle formed with the interlayer flow channel 1 are all the same. Alternatively, the number of passages included in the injection passage 41 and the discharge passage 42 and / or their height and angle may be different.

[0038] Furthermore, the structural design of this embodiment eliminates the need to explicitly distinguish which of the aforementioned channels is the injection channel 31 and which is the outlet channel 32 during application. For example, when two channels are provided for injecting or discharging coolant into the interlayer flow channel 1, selecting one as the injection channel 31 and the other as the outlet channel 32 will be sufficient.

[0039] In one possible embodiment, multiple injection channels 41 are evenly distributed. Specifically, the interlayer flow channel 1 is provided with injection points of multiple injection channels 41, and the injection points of the multiple injection channels 41 are evenly distributed from top to bottom along the interlayer flow channel 1.

[0040] In one possible embodiment, the number of injection passages 41 is equal to the number of discharge passages 42.

[0041] In one possible embodiment, the multiple injection channels 41 are all located on the vertical cross-section of the interlayer flow channel 1 and are parallel to each other; or the multiple injection channels 41 are not all located on the vertical cross-section of the interlayer flow channel 1, that is, at least one of the multiple injection channels 4 is located on a surface that is at a certain angle to the vertical cross-section of the interlayer flow channel 1.

[0042] The arrangement of the multiple discharge channels 42 is similar to the arrangement of the injection channels 41 described above.

[0043] The specific arrangement of the multiple injection passages 41 and multiple discharge passages 42 is adjusted according to the flow rate distribution of the coolant in the interlayer flow channel 1.

[0044] To ensure proper airflow within the MOCVD equipment (Area A), the isolation baffle is designed as a multi-segment structure, comprising multiple annular segments with varying inner diameters from top to bottom, making the annular baffle 100 stepped. This ensures that at least some of the annular segments form an angle with the vertical direction, thereby preventing dead zones and eddies from forming in the airflow within the MOCVD equipment.

[0045] In one embodiment of the present invention, the shape of the interlayer flow channel 1 is consistent with the shape of the annular baffle 100, including multiple annular segments with different inner diameters, thus the interlayer flow channel 1 is also stepped. In this embodiment, coolant can be injected into the interlayer flow channel 1 from different positions, which increases the range of coolant flow within the interlayer flow channel 1 compared to the prior art, thereby improving the cooling effect.

[0046] However, the multi-segment structure of the sandwich channel 1 causes different angles between each annular segment of the sandwich channel 1 and the vertical direction. The flow direction of the coolant in each segment will be different. When the coolant flows in the sandwich channel 1, the different flow directions will affect each other, resulting in dead zones and eddies in different flow directions during the flow of the coolant.

[0047] The present invention further proposes another preferred embodiment. In this embodiment, the shape of the interlayer flow channel 1 is not the same as the shape of the annular baffle 100. The interlayer flow channel 1 is trapezoidal in its vertical cross-section, meaning the area where the interlayer flow channel 1 connects to the injection passage 41 is linear. This ensures that the coolant flows in the same direction within the interlayer flow channel 1 after being injected through the injection passage 41. This reduces dead zones in the coolant flow within the interlayer flow channel 1, enhancing the cooling effect.

[0048] Specifically, the annular baffle 100 is welded together from an outer cylindrical baffle 21 and an inner cylindrical baffle 22. The space between the inner wall of the outer cylindrical baffle 21 and the outer wall of the inner cylindrical baffle 22 forms a sandwich flow channel 1. The inner diameters of both the outer cylindrical baffle 21 and the inner cylindrical baffle 22 gradually increase from top to bottom, and correspondingly, the inner diameter of the sandwich flow channel 1 gradually increases from top to bottom.

[0049] In one possible embodiment, when the interlayer flow channel 1 connects to multiple injection passages 41, the multiple injection passages 41 are parallel to each other; when the interlayer flow channel 1 connects to multiple discharge passages 42, the multiple discharge passages 42 are parallel to each other. During the flow of coolant, the flow direction within the injection passages 41 before injection into the interlayer flow channel 1 is also the same, which can better avoid dead zones and eddies caused by mutual influence of flow directions during the flow process.

[0050] In one possible embodiment, multiple injection channels 41 are located on the vertical cross-section of the interlayer channel 1, and each injection channel 41 forms an angle with the cross-section of the interlayer channel 1. included angle 30° or greater.

[0051] Preferably, the included angle Greater than or equal to 60° and less than or equal to 120°.

[0052] Preferably, the included angle 90° or greater and 100° or less.

[0053] In one possible embodiment, the included angles formed by the tangent of each injection passage 41 and the interlayer flow channel 1 are all equal.

[0054] For example, refer to Figure 2a If the interlayer flow channel 1 connects to n injection channels 41, then any one of the n injection channels 41 forms an angle with the tangent of the interlayer flow channel 1. With n injection pathways, n angles are formed.

[0055] n included angles They can be the same or different. Preferably, when the interlayer flow channel 1 connects to n (n≥2) injection passages 41, these n injection passages 41 are parallel to each other, that is, the n angles formed by these n injection passages 41 and the tangent of the interlayer flow channel 1. They are all equal.

[0056] The embodiments of the present invention provide an isolation baffle device for an MOCVD reaction chamber, which allows coolant to flow into and out of the interlayer channel from different positions, and reduces dead angles in the flow of coolant in the interlayer channel 1, thereby adjusting the flow velocity distribution of coolant in the interlayer channel, making the flow range of coolant in the interlayer channel larger and the distribution more uniform.

[0057] The following examples provide embodiments where the angle formed by the injection passage 41 and the cross-section of the interlayer flow channel is different (i.e., different injection angles). Compared with the comparative example, these examples significantly improve the problem of uneven cooling of the isolation baffle device and enhance the uniformity of the temperature field distribution inside the reaction chamber, thus contributing to the improvement of the uniformity of epitaxial layer growth on the substrate surface. The influence of the coolant flow velocity distribution within the interlayer flow channel 1 on the cooling effect on the isolation baffle device is also shown.

[0058] Comparative Example

[0059] See the instruction manual appendix Figures 1a to 1c The existing isolation baffle device includes an annular baffle, a jacketed flow channel inside the annular baffle suitable for containing coolant, an injection channel above the jacketed flow channel, and an outlet channel. Coolant is injected from the upper end of the isolation baffle device and flows out from the upper end of the isolation baffle device. Figure 1c As shown in the simulation diagram of the coolant flow effect, the upper layer of coolant inside the isolation baffle device has a significantly higher flow velocity than the lower layer, resulting in poor flow velocity uniformity. The coolant will generate eddies in the interlayer channel, and the coolant flow area is small, leading to uneven cooling of the isolation baffle device.

[0060] Example 1

[0061] See Figure 2a The isolation baffle device includes: an annular baffle 100, a jacketed flow channel 1 located inside the annular baffle 100 suitable for containing coolant, an injection channel 31 located at one end of the jacketed flow channel 1, an outlet channel 32 located at the other end of the jacketed flow channel 1, and a plurality of injection passages 41 connecting the jacketed flow channel 1 and the injection channel 31, and a plurality of discharge passages 42 connecting the jacketed flow channel 1 and the outlet channel 32. The injection channel 31 and the outlet channel 32 are symmetrically arranged.

[0062] The annular baffle 100 is stepped in the vertical cross-section, and the interlayer flow channel 1 is trapezoidal in the vertical cross-section. The interlayer flow channel 1 is connected to multiple injection passages 41, all of which are parallel to each other, and the angle formed by each injection passage 41 and the tangent of the interlayer flow channel 1 is 30°. The discharge passage 42 is symmetrically arranged with respect to the injection passages 41.

[0063] The simulation diagram of the coolant flow effect of the above-mentioned isolation baffle device is shown below. Figure 2b As shown, it can be seen that under this angle setting, although the coolant will still generate eddies in the jacketed flow channel 1, the area through which the coolant flows is significantly larger than that of the comparative example, and the cooling effect is improved.

[0064] Example 2

[0065] See Figure 3a and Figure 3b The difference between Example 2 and Example 1 is that in Example 1, the angle formed by the cross-section of each injection passage 41 and the interlayer flow channel 1 is 30°, while in Example 2, the angle formed by the cross-section of each injection passage 41 and the interlayer flow channel 1 is 45°. With this angle setting, compared to the comparative example and Example 1, the area through which the coolant flows is larger. Although eddies are still generated during the coolant flow, the area of ​​the eddy region is reduced.

[0066] Example 3

[0067] See Figure 4a and Figure 4bThe difference between Example 3 and Example 2 is that in this example, the angle formed by the cross-section of each injection passage 41 and the interlayer flow channel 1 is 60°. With this angle setting, compared with the comparative example and Example 2, the area through which the coolant flows is larger. Although eddies are still generated during the flow of coolant, the area of ​​the eddy region is reduced.

[0068] Example 4

[0069] See Figure 5a and Figure 5b The difference between Example 4 and Example 3 is that in this example, the angle formed by the tangent of each injection passage 41 and the interlayer flow channel 1 is 90°. Under this angle setting, no eddies are generated when the coolant flows through the interlayer flow channel 1. Compared with the comparative example and Example 3, the area through which the coolant flows is larger, resulting in a better cooling effect.

[0070] Example 5

[0071] See Figure 6a and Figure 6b The difference between Example 5 and Example 4 is that in this example, the angle formed by the tangent of each injection passage 41 and the interlayer flow channel 1 is 100°. Under this angle setting, no eddies are generated when the coolant flows in the interlayer flow channel 1. Compared with the comparative example and Example 4, the uniformity of coolant flow is better and the cooling effect is more ideal.

[0072] Example 6

[0073] See Figure 7a and 7b The difference between Example 6 and Example 5 is that in this example, the angle formed by the cross-section of each injection passage 41 and the interlayer flow channel 1 is 115°. Although the coolant flow area is smaller than that in Example 5, and the coolant flow forms a vortex region, the coolant flow area is larger and the cooling effect is better than that in the comparative example.

[0074] Example 7

[0075] See Figure 8a and Figure 8b The difference between Example 7 and Example 6 is that in this example, the angle formed by the cross-section of each injection passage 41 and the interlayer flow channel 1 is 120°. Although the coolant flow area is smaller than that in Example 5, and the coolant flow forms a vortex region, the coolant flow area is still larger and the cooling effect is better than that in the comparative example.

[0076] In summary, this invention provides an isolation baffle device for the MOCVD reaction chamber, which allows for a wider and more uniform distribution of coolant within the interlayer flow channel, improving the problem of uneven cooling caused by the isolation baffle device and thus enhancing the uniformity of the temperature field distribution inside the reaction chamber. Furthermore, by adjusting the angle formed by the injection passage and the tangent of the annular segment containing the injection passage on the interlayer flow channel, the eddy current phenomenon of coolant within the interlayer flow channel can be eliminated, resulting in even more ideal cooling uniformity.

[0077] While embodiments of the present invention have been described in detail above, it will be apparent to those skilled in the art that various modifications and variations can be made to these embodiments. However, it should be understood that such modifications and variations fall within the scope and spirit of the invention as set forth in the claims. Furthermore, the invention described herein may have other embodiments and can be implemented or carried out in various ways.

Claims

1. An isolation baffle device for an MOCVD reaction chamber, characterized in that, The annular baffle, the interlayer flow channel adapted to contain the cooling liquid inside the annular baffle, the liquid injection channel at one end of the interlayer flow channel, the liquid outlet channel at the other end of the interlayer flow channel, and the plurality of injection passages connecting the interlayer flow channel and the liquid injection channel, the plurality of discharge passages connecting the interlayer flow channel and the liquid outlet channel are included. The annular baffle includes a plurality of annular segment portions with different inner diameters from top to bottom, so that the annular baffle is stepped, and an included angle is formed between at least part of the annular segment portions and the vertical direction. The interlayer flow channel is trapezoidal in the vertical direction, so that the interlayer flow channel is a circular truncated cone. The inner diameter of the interlayer flow channel gradually increases from top to bottom. The injection passages and the discharge passages are symmetrically arranged on the central axis of the interlayer flow channel at both ends of the interlayer flow channel. The interlayer flow channel is provided with a plurality of injection points of the injection passages, and the injection points of the plurality of injection passages are uniformly distributed from top to bottom along the interlayer flow channel.

2. The isolation shutter apparatus for a MOCVD reactor chamber of claim 1, wherein, When the interlayer flow channel communicates with the plurality of injection passages, the plurality of injection passages are parallel to each other.

3. The isolation shutter apparatus for a MOCVD reactor chamber of claim 1, wherein, When the interlayer flow channel communicates with the plurality of discharge passages, the plurality of discharge passages are parallel to each other. The injection passages are all located on the vertical cross-section of the interlayer flow channel, each injection passage forms an included angle with the cross section of the interlayer flow channel, and the included angle is greater than or equal to 30°.

4. The isolation shutter apparatus for a MOCVD reactor chamber of claim 1, wherein, The included angle is greater than or equal to 60° and less than or equal to 120°.

5. The isolation shutter apparatus of a MOCVD reactor chamber of claim 4, wherein, The included angle is greater than or equal to 90° and less than or equal to 100°.

6. The isolation shutter apparatus of a MOCVD reactor chamber of claim 5, wherein, The included angle formed by each injection passage and the cross section of the interlayer flow channel is equal.

7. The isolation shutter apparatus of claim 4, wherein, The number of the liquid injection channel is one, and the number of the liquid outlet channel is one.

8. The isolation shutter apparatus for a MOCVD reactor chamber of claim 1, wherein, The connecting line of the liquid injection channel and the liquid outlet channel intersects the central axis of the interlayer flow channel. The number of the injection passages is equal to the number of the discharge passages.

9. The isolation shutter apparatus for a MOCVD reactor chamber of claim 8, wherein, ​

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