Multi charged particle beam drawing apparatus and multi charged particle beam drawing method

Abstract

The present application provides a kind of multi-charged particle beam drawing device and multi-charged particle beam drawing method capable of preventing the decline of drawing precision.The multi-charged particle beam drawing method of the present embodiment has: during the period of irradiating the substrate placed on the continuously moving worktable with the multi-beam comprising multiple charged particle beams, a tracking action is performed to make the deflection position of the multi-beam follow the movement of the worktable; and in the tracking action, each beam of the multi-beam is irradiated to the rectangular region after the drawing area of the substrate is divided into a grid shape; after each beam is irradiated to at least a part of the multiple pixels divided into a grid shape with a specified size, each beam is irradiated in a second emission sequence different from the first emission sequence.

Description

[0001] This application claims priority based on Japanese Patent Application No. 2021-149612 (filed on September 14, 2021), the entire contents of which are incorporated herein by reference. Technical Field

[0002] This invention relates to a multi-charged particle beam mapping apparatus and a multi-charged particle beam mapping method. Background Technology

[0003] With the increasing integration of LSIs, the linewidths required for semiconductor devices are being miniaturized. To create the desired circuit patterns for semiconductor devices, a method is employed that uses a shrink-projection exposure device to transfer a high-precision original pattern (mask, or also called an intermediate mask, especially used in steppers or scanners) formed on a glass substrate, such as a light-shielding film, onto the wafer. In the fabrication of this high-precision original pattern, an electron beam etching technique is used, in which a resist pattern is formed using an electron beam lithography device.

[0004] Compared to drawing with a single electron beam, a multi-beam drawing apparatus can significantly increase production capacity because it can irradiate many beams at once. In a multi-beam drawing apparatus that utilizes a blanking aperture array, for example, an electron beam emitted from a single electron gun is passed through a forming aperture array having multiple openings to form multiple beams (multiple electron beams). These multiple beams pass through corresponding blanking devices within the blanking aperture array. The blanking aperture array has electrode pairs for individually deflecting the beams, with openings formed between the electrode pairs for beam passage. By controlling the electrode pairs (blanking devices) to the same potential or different potentials, the passing electron beams are blanked. The electron beams deflected by the blanking devices are shielded, while the undeflected electron beams are irradiated onto the substrate.

[0005] The multi-beam mapping apparatus has a main deflector and a secondary deflector that deflect the beams to determine the beam irradiation position on the substrate. The main deflector positions the multiple beams as a whole at a predetermined location on the substrate, and the secondary deflector deflects them to fill the beam spacing.

[0006] In such a multi-beam drawing apparatus, multiple beams are irradiated at once, and the beams formed by passing through the same or different openings of the aperture component are connected to each other to draw a pattern of the desired graphic shape. Since the shape of the overall image of the beam array irradiated on the substrate (hereinafter also referred to as "beam shape") is presented as the connection accuracy of the drawn pattern, the distortion of the overall image of the beam array is adjusted by an electro-optical system.

[0007] In addition, dose modulation correction has been proposed, which modulates the irradiation dose for each beam, so that even if exposure is performed through a beam with a positional deviation, the effect of the beam position deviation will not be reflected in the dose distribution imparted to the resist. However, there are problems such as unclear correction effect and reduced production capacity. Summary of the Invention

[0008] The purpose of this invention is to provide a multi-charged particle beam mapping device and method that can prevent the degradation of mapping accuracy.

[0009] A method for depicting multiple charged particle beams according to one aspect of the present invention comprises: a step of performing a tracking operation during the irradiation of a substrate placed on a continuously moving stage, wherein the deflection position of the multiple beams follows the movement of the stage; and a step of irradiating each of the multiple beams into a plurality of rectangular regions after the depicting area of ​​the substrate is divided into a grid shape during the tracking operation; and irradiating at least a portion of a plurality of pixels after the rectangular regions are divided into a grid shape by a predetermined size with the beams irradiated in a first emission sequence, and then irradiating the beams in a second emission sequence different from the first emission sequence. Attached Figure Description

[0010] Figure 1 This is a schematic structural diagram of an apparatus depicting an embodiment of the present invention.

[0011] Figure 2 This is a top view of the shaped aperture array component.

[0012] Figure 3 This is an illustration of an example depicting an action.

[0013] Figure 4 This is a diagram showing an example of a multi-beam illumination area and depicting object pixels.

[0014] Figure 5 This is a diagram illustrating an example of a multi-beam depiction method.

[0015] Figure 6 A is a diagram representing the illumination beam. Figure 6 B is a diagram representing the firing sequence.

[0016] Figure 7 Figure A shows an example of a change in launch position. Figure 7 B is a diagram representing the illumination beam. Figure 7 C is a diagram representing the launch sequence.

[0017] Figure 8 A is a diagram representing the launch sequence. Figure 8 B is a graph representing the error distribution of the depicted location.

[0018] Figure 9 A is a diagram representing the launch sequence. Figure 9 B is a graph representing the error distribution of the depicted location.

[0019] Figure 10 A, Figure 10 B is a diagram illustrating the direction of travel in the processing.

[0020] Figure 11 This is a graph representing the cancellation of errors. Detailed Implementation

[0021] Hereinafter, embodiments of the present invention will be described based on the accompanying drawings. In the embodiments, an electron beam structure will be described as an example of a charged particle beam. However, the charged particle beam is not limited to an electron beam, and may also be an ion beam, etc.

[0022] Figure 1 This is a schematic structural diagram of the drawing apparatus according to this embodiment. The drawing apparatus includes a control unit 100, a storage unit 102, and a drawing unit 200. The drawing apparatus is an example of a multi-charged particle beam drawing apparatus. The drawing unit 200 includes an electron tube 20 and a drawing chamber 30. Inside the electron tube 20, an electron gun 21, an illumination lens 22, a forming aperture array component 23, a blackout plate 24, a reducing lens 25, a limiting aperture component 26, an objective lens 27, and deflectors 28 and 29 are arranged. The reducing lens 25 and the objective lens 27 are both composed of electromagnetic lenses, and the reducing lens 25 and the objective lens 27 constitute a reducing optical system.

[0023] An XY stage 32 is arranged inside the drawing chamber 30. A substrate 40 on which the drawing object is to be drawn is placed on the XY stage 32. The substrate 40 may be an exposure mask used in the manufacture of semiconductor devices, a semiconductor substrate (silicon wafer) on which semiconductor devices are manufactured, or a mask substrate coated with resist that has not yet been drawn.

[0024] like Figure 2 As shown, on the shaped aperture array component 23, openings H are formed in a matrix with m rows and n columns (m, n≥2) at a specified spacing. Each opening H is formed by a rectangle or circle of the same size and shape.

[0025] The electron beam B emitted from the electron gun 21 illuminates the entire forming aperture array component 23 approximately perpendicularly through the illumination lens 22. The electron beam B passes through multiple openings H of the forming aperture array component 23, thereby forming an m-row n-column electron beam (multi-beam) MB.

[0026] Through-holes are formed on the blanking plate 24 to match the configuration positions of each opening H of the shaped aperture array component 23. In each through-hole, a pair of electrodes (blankers: blanking deflectors) are respectively configured. A control voltage is applied to one of the two electrodes for each beam, while the other is grounded. By applying voltage to the paired electrodes, the electron beam passing through each through-hole is independently deflected. Blanking control is performed through this deflection of the electron beam.

[0027] Multiple electron beams (MBs) passing through the blanking plate 24 are reduced in size by the reducing lens 25 and travel toward the central opening formed on the limiting aperture member 26. Electron beams deflected by the blanking device of the blanking plate 24 are deviated from the central opening of the limiting aperture member 26 and are blocked by the limiting aperture member 26. On the other hand, electron beams not deflected by the blanking device pass through the central opening of the limiting aperture member 26.

[0028] In this way, the limiting aperture component 26 will be deflected by the blanking device to become a beam-off state, thus blocking each beam. And, by the beam that passes through the limiting aperture component 26 from becoming a beam-on state to becoming a beam-off state, a single-emission beam is formed.

[0029] Multiple beams of MB, after passing through the aperture limiting component 26, are focused by the objective lens 27 to form a pattern image with the desired reduction ratio. They are then deflected together by deflectors 28 and 29 and irradiated onto the substrate 40. For example, as the XY stage 32 moves continuously, the irradiation position of the beams is controlled by the deflector 28 (main deflector) to make them follow the movement of the XY stage 32.

[0030] Ideally, the multiple MB beams irradiated at one time are arranged with a spacing obtained by multiplying the arrangement spacing of the multiple openings of the shaped aperture array component 23 by the aforementioned desired reduction rate. The drawing device performs the drawing operation by grating scanning in which the emitted beams are continuously and sequentially irradiated. When drawing the desired pattern, the required beams are controlled to be turned on (ON) by blanking control according to the pattern.

[0031] For example, it can be depicted using a depiction algorithm like the one described below. Figure 3 As shown, the drawing area 50 of the substrate 40 is virtually divided into a plurality of short strip regions 52 with a predetermined width in the y-direction. For example, the XY stage 32 is moved and adjusted so that the irradiation area 54 that can be irradiated by a single multi-beam MB is located at the left end of the first strip region 52, and drawing begins. By moving the XY stage 32 in the -x direction, drawing can be advanced relatively in the +x direction.

[0032] After the first strip region 52 is drawn, the stage position is moved in the -y direction to adjust the irradiation area so that it is located at the right end of the second strip region 52, and drawing begins. Furthermore, the XY stage 32 is moved, for example, in the +x direction, to draw in the -x direction.

[0033] By alternating the direction of the drawing while drawing, such as drawing in the 3rd strip region 52 in the +x direction and drawing in the 4th strip region 52 in the -x direction, the drawing time can be shortened. However, it is not limited to drawing in the 3rd strip region 52 in the +x direction; the drawing can also proceed in the same direction while drawing each strip region 52.

[0034] Figure 4 This is an example diagram showing the illumination area of ​​multiple beams and the pixels depicting the object. In Figure 4 In this context, the strip region 52 is divided into multiple grid-like regions, for example, by a beam size of multiple beams. Each grid region becomes a depicted object pixel 60 (unit illumination area or depiction position). The size of the depicted object pixel 60 is not limited to the beam size and can be any size independent of the beam size. For example, it can also be a size of 1 / n of the beam size (where n is an integer greater than or equal to 1).

[0035] exist Figure 4 In the example, it is shown that the depicted area of ​​the substrate 40 is divided into multiple strip regions 52 in the y direction, for example, with a width dimension substantially the same as that of the irradiated area 54 (depicted field) that can be irradiated by irradiation of multiple beams of MB once. In addition, the width of the strip regions 52 is not limited to this.

[0036] exist Figure 4 The example illustrates an 8x8 column with multiple beams. Within the illumination area 54, multiple (in this example, 64) pixels 44 (the depicted positions of the beams) can be illuminated by a single emission of multiple MBs. The spacing between adjacent pixels 44 is called the spacing between each beam of the multiple beams. Figure 4 In the example, a square region surrounded by four adjacent pixels 44 and including one of the four pixels 44 constitutes a grid 46. Figure 4 In the example, each grid 46 is composed of 4×4 pixels.

[0037] Figure 5 This diagram illustrates an example of a multi-beam depiction method based on continuous movement. Figure 5 In the middle, it indicates that it is described Figure 4 The grid depicted is represented by the first segment of eight beams in the y-direction of the multi-beam region 52 shown. The eight beams in the first segment of the y-direction pass through... Figure 2 The bundle of openings H1 to H8 of the shaped aperture array component 23 shown.

[0038] exist Figure 5 In the example, it is shown that four pixels are depicted (exposed) during the period when the XY stage 32 moves a distance of 8 beam pitch (8p). The deflector 28 deflects the multiple MB beams together so that the relative position of the irradiated area 54 and the substrate 40 does not deviate due to the movement of the XY stage 32 during the period of depicting (exposing) four pixels. Thus, the irradiated area 54 can follow the movement of the XY stage 32. In other words, tracking control is performed. Figure 5 The example illustrates a case where one tracking loop is implemented by depicting (exposing) 4 pixels over a period of time equal to the distance of 8 beam spacing.

[0039] If the rendering time for each pixel is T, then during the period from t=0 to t=T, the first emitted beam is applied to, for example, the first pixel from the leftmost side of the bottom segment of the grid of interest. During the period from t=0 to t=T, the XY stage 32 moves in the -x direction by, for example, the amount of two beam intervals (2p). During this period, the tracking operation continues. Figure 5 In each grid cell at t=0, beams #1 to #8 are irradiated through openings H1 to H8 of the shaped aperture array component 23. In the grid cells after t=T, for ease of explanation, only the irradiation position of beam #1 that passes through opening H1 is indicated. Furthermore, pixels that have undergone beam irradiation are indicated by diagonal lines.

[0040] At time t = T, while beam deflection for tracking control continues by deflector 28, multiple beams are deflected together by deflector 29 (sub-deflector) independently of the beam deflection for tracking control. This shifts the depicted positions of each beam. Figure 5 In this example, the pixel depicting the object is shifted from the bottom leftmost pixel of the grid of interest to the second leftmost pixel of the grid below. During this time, the XY stage 32 also moves at a constant speed, so the tracking action continues.

[0041] During the period from time t = T to t = 2T, the second emitted beam illuminates the second pixel from the bottom and the first pixel from the left of the grid of interest. During the period from time t = T to t = 2T, the XY stage 32 moves in the -x direction by the amount of two beam intervals. During this period, the tracking operation continues.

[0042] At time t = 2T, the pixel of the target object is shifted from the second pixel from the bottom and the first pixel from the left in the grid of interest to the third pixel from the bottom and the first pixel from the left in the grid of interest by a multi-beam deflection performed by deflector 29. During this time, the XY stage 32 also moves, so the tracking operation continues.

[0043] During the period from time t = 2T to t = 3T, the third emitted beam illuminates the third pixel from the bottom and the first pixel from the left of the grid of interest. During the period from time t = 2T to t = 3T, the XY stage 32 moves in the -x direction by, for example, the amount of two beam intervals. During this period, the tracking operation continues.

[0044] At time t = 3T, the pixel depicting the object is shifted from the third segment from the bottom and the first pixel from the left of the grid of interest to the fourth segment from the bottom and the first pixel from the left by the deflector 29 through a multi-beam deflection. During this time, the XY stage 105 also moves, so the tracking operation continues.

[0045] During the period from time t = 3T to t = 4T, the fourth emitted beam illuminates the fourth segment from the bottom and the first pixel from the left of the grid of interest. During the period from time t = 3T to t = 4T, the XY stage 32 moves in the -x direction by, for example, the amount of two beam intervals. During this period, the tracking operation continues. With this, the depiction of the first pixel column from the left of the grid of interest is completed.

[0046] exist Figure 5 In the example, after illuminating the corresponding beams at their respective depicted positions three times from the initial launch position, the beam deflection for tracking control is reset, thus returning the tracking position to the starting tracking position. In other words, the tracking position is moved back in the opposite direction to the stage movement. Figure 5 In the example, at time t = 4T, tracking of the focus grid is deactivated, and the beam is swung back to the focus grid offset by 8 beam spacings in the x-direction. Additionally, in Figure 5 In the example, bundle #1 corresponding to opening H1 is described, but the other bundles are also described in the same way for their respective grids.

[0047] Additionally, since the drawing of the first pixel column from the left of each grid has ended, after the tracking reset, in the next tracking loop, firstly, the deflector 29 deflects to align (shift) the drawing position of the bundle to the first segment from the bottom and the second pixel from the left of each grid.

[0048] During the period from time t = 4T to t = 8T, the second pixel column from the left of the focus grid is drawn. At time t = 8T, the tracking of the focus grid is released, and the beam is swung back to the focus grid offset by 8 beam spacings in the x-direction.

[0049] In addition, since the drawing of the first and second pixel columns from the left of each grid has ended, after the tracking reset, in the next tracking cycle, firstly, the deflector 29 deflects to align (shift) the drawing position of the bundle to the first segment from the bottom and the third pixel from the left of each grid.

[0050] During the period from time t = 8T to t = 12T, the third pixel column from the left of the focus grid is drawn. At time t = 12T, the tracking of the focus grid is released, and the beam is swung back to the focus grid offset by 8 beam spacings in the x-direction.

[0051] In addition, since the drawing of the first to third pixel columns from the left of each grid has ended, after the tracking reset, in the next tracking cycle, firstly, the deflector 29 deflects to align (shift) the drawing position of the bundle to the first segment from the bottom and the fourth pixel from the left of each grid.

[0052] As described above, in the same tracking cycle, while the irradiation area 54 is controlled relative to the substrate 40 by the deflector 28 to make their relative positions the same, each emission is performed while the deflector 29 shifts the position pixel by pixel. After one tracking cycle, the tracking position of the irradiation area 54 is returned, and the position of the first emission is aligned with the position offset by one pixel. Then, while performing the next tracking control, each emission is performed while the deflector 29 shifts the position pixel by pixel.

[0053] The pattern is drawn by repeating this action. For example, as... Figure 6 As shown in A, for one grid cell, the bundles #1, #3, #5, and #7 corresponding to the openings H1, H3, H5, and H7 are used to draw the grid cell pixel by pixel.

[0054] Figure 6 B indicates the emission order of the pixels within this grid. Beam #7 emits pixels from the bottom left of the first pixel column. Next, beam #5 emits pixels from the bottom left of the second pixel column. Next, beam #3 emits pixels from the bottom left of the third pixel column. Finally, beam #1 emits pixels from the bottom left of the fourth pixel column.

[0055] During the drawing process based on such a drawing algorithm, the control unit 100 reads the drawing data from the storage device (not shown) and calculates the pattern area density ρ of all pixels 60 within each strip region 52 using the pattern defined by the drawing data. The control unit 100 multiplies the pattern area density ρ by the reference illumination amount D0 and calculates the illumination amount ρD0 of the beam illuminating each pixel 60.

[0056] exist Figure 5 , Figure 6 In the example shown, if one pixel column (4 pixels) is drawn, the tracking is reset and the next pixel column is drawn, but the drawing device can use a variety of drawing methods.

[0057] For example, in Figure 7 In the drawing method shown in A, if the first pixel from the left of the bottom segment and the second pixel from the left of the bottom segment of the grid of interest are drawn, the tracking is reset, and the beam is swung back to the grid of interest that is offset by 4 beam spacings. Then, while performing the tracking operation, the third pixel from the left of the bottom segment and the fourth pixel from the left of the bottom segment of the grid are drawn.

[0058] Next, reset the tracking and swing the beam back to the adjacent grid of interest. Align the drawing position with the second pixel from the bottom and the first pixel from the left of the grid, and while performing the tracking action, draw the second pixel from the bottom and the first pixel from the left of the grid.

[0059] In a typical pattern drawn using this method, one grid is, for example, Figure 7 As shown in Figure B, the drawing is performed by drawing two pixels at a time using bundles #1 to #8 corresponding to openings H1 to H8. Figure 7 C represents the emission order of the pixels within this grid.

[0060] In this way, the number of beams illuminating a grid and the emission order of pixels within the grid can be set arbitrarily.

[0061] In multi-beam rendering, due to the positional accuracy of the opening H on the forming aperture array component 23 and the distortion of the beam shape (the shape of the overall image of the beam array), there are differences in the beam accuracy of each beam. As mentioned above, by irradiating a single grid with multiple beams or irradiating adjacent pixels with different beams, the rendering error caused by the difference in accuracy of a single beam is averaged out, but the error in the pattern rendering position remains slightly.

[0062] The inventors also discovered that the error in pattern depiction position varies depending on the emission order of pixels within the grid. By emitting pixels within the same grid in a first emission order followed by a second emission order (different from the first), the impact of the depiction position error can be reduced. When emitting multiple beams into the grid, since these multiple beams are composed of beams from a certain row within the beam array, reflecting the tendency of beam shape distortion, the emission order to reduce error can be predicted based on this tendency.

[0063] Figure 8 A represents an example of the first emission order J1 of pixels within a 10×10 pixel grid. Figure 8 B represents the error distribution of the depicted position within the grid when the first firing sequence J1 is used.

[0064] Figure 9A represents an example of the second emission order J2 of pixels within a 10×10 pixel grid. The second emission order J2 differs from the first emission order J1. In the second emission order J2, the emission order of pixels whose emission order j in the first emission order J1 is 1≤j≤50 is set to j+50, and the emission order of pixels whose emission order j in the first emission order J1 is 51≤j≤100 is set to j-50. In this example, all pixels within the grid have different emission orders in the first emission order J1 and the second emission order J2.

[0065] Figure 9 B represents the error distribution of the depicted position within the grid when the second launch sequence J2 is used.

[0066] A strip region 52 is drawn at least twice, and is controlled to be drawn for a grid in different emission orders.

[0067] For example, such as Figure 10 As shown in Figure A, adjustments are made so that the irradiated area 54, which can be irradiated by one multiple beam of MB, is located at the left end of the strip area 52, and drawing begins. By moving the XY stage 32 in the -x direction, the drawing is advanced relatively in the x direction. At this time, beam irradiation is performed in the first emission sequence J1. Hereinafter, one drawing of the strip area 52 is also referred to as one path.

[0068] After the first depiction (first path) of strip region 52, as Figure 10 As shown in B, adjustments are made so that the irradiation area 54 is located at the right end of the same strip area 52. The XY stage 32 is moved in the x direction, and the drawing is advanced in the -x direction (second path) relative to it. At this time, beam irradiation is performed in the second emission sequence J2.

[0069] A pattern is drawn by irradiating a grid with beams in the first emission sequence J1 and the second emission sequence J2, such as Figure 11 As shown, their respective positional errors are added together to cancel each other out.

[0070] The first emission sequence J1 and the second emission sequence J2 are calculated in advance through simulation and recorded in the storage unit 102 as emission sequence data. At this time, it is preferable to determine the second emission sequence J2 in a way that cancels out the drawing position error when drawing with the first emission sequence J1. For example, the second emission sequence J2 can also be determined based on the first emission sequence J1 obtained through simulation, in a way that is the reverse drawing sequence. Furthermore, the grid can be divided into 2×2 pixels, and the second emission sequence J2 can be obtained by replacing the emission sequence in the diagonal direction in each of the four pixels.

[0071] The control unit 100 reads the emission sequence data from the storage unit 102, and in the first drawing of a strip region 52, illuminates the grid with the first emission sequence J1, and in the second drawing, illuminates the same grid with the second emission sequence J2. Since the drawing position errors corresponding to each emission sequence are canceled out, the decrease in drawing accuracy can be prevented.

[0072] In the above embodiments, an example was given of a drawing algorithm that illuminates pixels within a grid divided by the inter-beam spacing of multiple beams in different emission orders. However, the drawing area can also be divided into multiple rectangular regions based on the size and unit of the drawing algorithm, such as integer multiples (e.g., 2 times) or integer fractions (e.g., 1 / 2) of the inter-beam spacing. For all or part of the pixels within a rectangular region, after illuminating each beam in a first emission order, each beam is illuminated in a second emission order different from the first emission order. In the case where only a portion of the pixels within a rectangular region has been illuminated, gaps can be filled through multiple drawing.

[0073] In the above embodiment, an example was described in which the first path was drawn in the first firing sequence J1 while the XY stage 32 was moved in the -x direction, and the second path was drawn in the second firing sequence J2 while the XY stage 32 was moved in the x direction. However, it is also possible to draw the first path and the second path while the XY stage 32 is moved in the -x direction, or to draw the first path and the second path while the XY stage 32 is moved in the x direction.

[0074] At this point, since the origins of the stripes of the first and second paths are not offset in the y-direction, it is preferable for them to overlap.

[0075] In the above embodiment, a structure with two deflectors 28 and 29, in which the deflector 28 is used for tracking control while the deflector 29 is used for beam movement within the grid, has been described. However, the deflector can also be a single-segment structure.

[0076] In a single-beam mapping device, the emission order can be changed according to the path when mapping the same strip area in multiple paths.

[0077] Furthermore, the present invention is not limited to the embodiments described above, and the constituent elements can be modified and embodied in practice without departing from its spirit. Moreover, various inventions can be formed by appropriately combining the multiple constituent elements disclosed in the above embodiments. For example, several constituent elements may be deleted from all the constituent elements shown in the embodiments. Furthermore, constituent elements across different embodiments may be appropriately combined.

[0078] Label Explanation

[0079] 20 Electron tube

[0080] 21 Electron Guns

[0081] 22 Illumination Lens

[0082] 23 Formed aperture array components

[0083] 24 Hidden Corner Plate

[0084] 25. Reduced lens

[0085] 26. Aperture limiting components

[0086] 27 Objective lens

[0087] 28, 29 Deflectors

[0088] 30 Drawing Room

[0089] 32 XY worktable

[0090] 40 substrate

[0091] 50 Depicting Area

[0092] 52 strip regions

[0093] 54 Irradiation Area

[0094] 100 Control Department

[0095] 102 Storage Department

[0096] 200 Depiction Department

Claims

1. A method for depicting multi-charged particle beams, wherein, have: A process involving a tracking operation during the irradiation of a substrate placed on a continuously moving stage with multiple beams of charged particles, such that the deflection position of the multiple beams follows the movement of the stage; and In the aforementioned tracking operation, each of the multiple beams is used to irradiate multiple rectangular regions after the depicted area of ​​the substrate is divided into a grid, and a different beam is irradiated onto each rectangular region in each tracking cycle. After at least a portion of the pixels in the rectangular region, which has been divided into a grid of a specified size, are respectively illuminated by the beams in a first emission sequence, the beams are then illuminated in a second emission sequence different from the first emission sequence.

2. The method for depicting multiple charged particle beams as described in claim 1, wherein, The area described above is divided into multiple strip regions of a specified width. For each strip region, the above-mentioned multi-beam irradiation is performed using multiple paths. In the first path, each beam is irradiated in the first emission sequence described above, and in the second path, each beam is irradiated in the second emission sequence described above.

3. The method for depicting multiple charged particle beams as described in claim 2, wherein, The direction of travel depicted in the first path of the above-mentioned strip region is different from the direction of travel depicted in the second path of the above-mentioned strip region.

4. The method for depicting multiple charged particle beams as described in claim 2, wherein, In both the first and second paths described above, the origin of the strip region is the same.

5. The method for depicting multiple charged particle beams as described in claim 1, wherein, The above tracking action is performed using the first deflector. The second deflector is used to shift the irradiation position within the aforementioned rectangular area.

6. The method for depicting multiple charged particle beams as described in claim 1, wherein, The second launch sequence is the reverse of the first launch sequence.

7. A multi-charged particle beam mapping device, wherein, have: The drawing unit performs a tracking operation during the irradiation of a substrate placed on a continuously moving worktable with multiple beams comprising multiple charged particle beams, so that the deflection position of the multiple beams follows the movement of the worktable. During the tracking operation, each of the multiple beams irradiates a grid-like rectangular area of ​​the drawing area of ​​the substrate, and a different beam is irradiated into each rectangular area in each tracking cycle; and The control unit controls the drawing unit in the following manner: after irradiating at least a portion of the plurality of pixels in the rectangular area, which is divided into a grid by a predetermined size, with each of the above beams in a first emission sequence, the control unit irradiates each of the above beams with a second emission sequence different from the first emission sequence.

8. The multi-charged particle beam mapping apparatus as claimed in claim 7, wherein, The area described above is divided into multiple strip areas of a specified width; The control unit controls the drawing unit in the following manner: for each strip area, the multiple beams are irradiated through multiple paths, the beams are irradiated in the first path in the first emission sequence, and the beams are irradiated in the second path in the second emission sequence.

9. The multi-charged particle beam mapping apparatus as claimed in claim 8, wherein, The control unit controls the drawing unit in such a way that the drawing direction in the first path of a strip area is different from the drawing direction in the second path.

10. The multi-charged particle beam mapping apparatus as claimed in claim 8, wherein, The control unit controls the drawing unit in such a way that the origin of the strip region is the same in the first path and the second path.

11. The multi-charged particle beam mapping apparatus as claimed in claim 7, wherein, It also has: The first deflector performs the aforementioned tracking action; and The second deflector shifts the irradiation position within the aforementioned rectangular area.

12. The multi-charged particle beam mapping apparatus as claimed in claim 7, wherein, The second launch sequence is the reverse of the first launch sequence.

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