Gallium oxide-aluminum oxide-based solar blind ultraviolet detector and preparation method
By depositing an aluminum oxide nanolayer on the surface of gallium oxide nanowires to form a Ga2O3/Al2O3 nanowire composite layer, the problems of low on/off ratio and low responsivity of pure gallium oxide detectors are solved, and a significant improvement in on/off ratio and responsivity is achieved.
CN115832080BActive Publication Date: 2026-07-24WUHAN POST & TELECOMM RES INST CO LTD
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Patent Information
- Application Number
- CN202211457530.X
- Authority / Receiving Office
- CN · China
- Patent Type
- Patents(China)
- Current Assignee / Owner
- Filing Date
- 2022-11-21
- Publication Date
- 2026-07-24
- Estimated Expiration
- 2042-11-21
AI Technical Summary
Technical Problem
Existing solar-blind ultraviolet detectors based on pure gallium oxide suffer from low on/off ratio and low responsivity.
Method used
An aluminum oxide nanolayer is deposited on the surface of gallium oxide nanowires to form a Ga2O3/Al2O3 nanowire composite layer. Electrodes are then placed on the composite layer. Ga2O3 nanowires are directly grown on the substrate using a CVD growth mechanism, which improves the compatibility between the semiconductor and the substrate.
Benefits of technology
By reducing dark current and decreasing the electrons carried away by oxygen adsorption, the on/off ratio and responsivity are significantly improved, thereby enhancing the detector's performance.
✦ Generated by Eureka AI based on patent content.
Abstract
The application relates to a gallium oxide-aluminum oxide-based solar blind ultraviolet detector and a preparation method thereof, which comprises a substrate, Ga2O3 nanowires grown on the substrate, an Al2O3 nanolayer deposited on the surface of the Ga2O3 nanowires, and the Al2O3 nanolayer and the Ga2O3 nanowires form Ga2O3 / Al2O3 nanowires, and all the Ga2O3 / Al2O3 nanowires constitute a composite material layer; two electrodes are arranged on the composite material layer. The application utilizes a CVD growth mechanism to directly grow Ga2O3 nanowires on the substrate, and the bulk compound semiconductor does not need to be etched, so that the compatibility of the semiconductor and the substrate is improved. The application deposits an Al2O3 nanolayer on the surface of the Ga2O3 nanowires, introduces the Al2O3 nanolayer as a cladding layer, greatly reduces the dark current, and to a certain extent, reduces the oxygen adsorption and the carried-away electrons, so that the on-off ratio is increased, and the response is improved.
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