A fully solid-state MEMS electric field sensor and its working method

Abstract

The present invention provides a fully solid-state MEMS electric field sensor and its working method. The fully solid-state MEMS electric field sensor can detect static electric fields / alternating current electric fields, and can automatically identify the direction of the electric field when measuring the static electric field. The fully solid-state MEMS electric field sensor includes components such as a shielding plate, a sensing plate, a shielding wire, a controlled switch, an amplifier, and a capacitor. Components such as the shielding plate, the sensing plate, the shielding wire, the controlled switch, the amplifier, and the capacitor of the fully solid-state MEMS electric field sensor are manufactured by MEMS microfabrication processes including integrated circuit processes. The electric field sensor of the present invention does not contain movable parts and does not require an excitation signal for driving, and has the characteristics of low power consumption, simple and reliable structure, small size, low power consumption, good temperature characteristics, and can be batch processed.

Description

Technical Field

[0001] The present invention relates to the field of sensors, further to the field of electric field sensors, and particularly to an all-solid-state MEMS electric field sensor processed by micro-nano processing technology, which can be used for sensing electric field intensity and sensing three-dimensional space electric field intensity. Background Art

[0002] The energy distribution in our country is unbalanced. It has economic advantages to use UHV direct current for long-distance, point-to-point, and high-power power transmission. With the rapid development of the UHV direct current power transmission technology field in our country, more and more DC transmission lines, such as 500 kV, 660 kV, and 800 kV DC transmission lines, are put into use or under construction. With the continuous growth of the scale of DC transmission projects and the gradual opening of the low-altitude airspace, the demand for monitoring the space electromagnetic environment around transmission lines is becoming increasingly urgent. The electromagnetic environment of high-voltage and UHV DC transmission lines is an issue that must be considered in engineering design and construction. An important aspect is the ground synthetic electric field.

[0003] Electric field measurement is of great significance. The research on space electric field measurement has been paid attention to by many researchers at home and abroad. Electric field sensors are widely used not only in aspects such as electromagnetic environment evaluation, state perception, defect identification, evaluation, and diagnosis of power transmission and transformation equipment and lines. In the meteorological field, electric field sensors can monitor the changes in the atmospheric electric field on the ground and at high altitudes, obtain information on the gestation, development, and occurrence of lightning, provide important indicators for lightning warning, thus providing important safety guarantees for the launch of aircraft such as missiles and satellites, and can also provide warning information for forests, scenic spots, transmission lines, and petrochemical refineries. In the petrochemical field, when static charges accumulate to a certain extent in the human body, equipment, oil and gas, etc., it is easy to cause electric discharge, resulting in serious safety accidents such as fires and explosions. Electric field sensors can evaluate the electrification situation in high-risk static electricity areas and provide strong support for safe production in the petrochemical field.

[0004] At present, there are many electric field sensors for measuring DC electric fields, including field milling electric field sensors, MEMS-based electric field sensors, fiber DC electric field sensors, and optical electric field sensors. Traditional field milling electric field sensors have factors such as high power consumption, low measurement accuracy, and high cost. They are difficult to support large-scale deployment and difficult to obtain comprehensive electric field status information of the power system. MEMS electric field sensors have outstanding characteristics such as small size, low power consumption, light weight, low cost, and easy integration. However, MEMS electric field sensors work based on resonance or vibration and need to work in a resonant or vibrating state. The driving modes of MEMS electric field sensors include electromagnetic, thermal drive, electrostatic, and piezoelectric. The applied driving excitation signal often causes electric field distortion problems and generates large electromagnetic interference to the measurement of the electric field. Fiber Bragg grating DC electric field sensors are not subject to external electromagnetic interference, but are easily disturbed by factors such as temperature. Rotary electro-optical crystal DC electric field sensors eliminate the influence caused by space charge by rotation, but the sensor requires components such as fiber collimators, polarizers, electro-optical crystals, and analyzers. The structure is relatively complex and inconvenient to use.

[0005] As a vector field, the electric field not only has intensity but also contains directional information. Measuring only the one-dimensional component of the electric field will lose the electric field information in other directions and thus fail to accurately obtain the full picture of the electric field to be measured. Traditional three-dimensional electric field sensors have complex structures, high costs, and large volumes. With the development of micro-nano processing technology, electric field sensors are developing in the direction of miniaturization and integration. Electric field sensors based on micro-nano processing technology can improve the spatial resolution of electric field detection. They have outstanding advantages such as small size, low power consumption, low cost, easy batch manufacturing, easy integration, and wide operating frequency band. They are an important development direction of electric field sensors and are receiving more and more attention. However, there is currently a lack of micro-sensors that can be used for three-dimensional electric field detection. In view of the above problems, it is necessary to propose a fully solid-state MEMS electric field sensor and a preparation method thereof that is reasonably designed and can effectively solve the above problems. Summary of the invention

[0006] The present invention aims to solve at least one of the technical problems existing in the prior art. The present invention provides an all-solid-state MEMS electric field sensor and a working method thereof.

[0007] Specifically, the technical solution of the present invention is as follows:

[0008] An all-solid-state MEMS electric field sensor, comprising:

[0009] A first sensing plate, wherein the first sensing plate is disposed on a substrate;

[0010] A first shielding plate, wherein the first shielding plate is disposed above the first sensing plate and exposes the first sensing plate;

[0011] The first shielded wire, the first end of the first shielded wire is connected to the first sensing electrode plate;

[0012] The first controlled single-pole double-throw switch, the first controlled single-pole double-throw switch S 1 (4) The terminal (4.1) is connected to the first sensing electrode plate through the first shielded wire; the first controlled single-pole double-throw switch S 1 (4) The terminal (4.1) is alternately connected to the first contact terminal (4.2) and the second contact terminal (4.3) of the first controlled single-pole double-throw switch S under the action of the control signal of the control terminal (4.0); the first controlled single-pole double-throw switch S 1 (4) The first contact terminal (4.2) is grounded; 1 (4) The first contact terminal (4.2) is grounded;

[0013] The second controlled single-pole double-throw switch, the second controlled single-pole double-throw switch S 2 (5) is connected to the second contact terminal (4.3) of the first controlled single-pole double-throw switch S through one of the contact terminals, the second controlled single-pole double-throw switch S 1 (4) The terminal (5.1) of (5) is alternately connected to the first contact terminal (5.2) and the second contact terminal (5.3) of the second controlled single-pole double-throw switch under the action of the control signal of the control terminal (5.0); the third controlled single-pole double-throw switch, the third controlled single-pole double-throw switch S 2 (5) The terminal (5.1) of (5) is alternately connected to the first contact terminal (5.2) and the second contact terminal (5.3) of the second controlled single-pole double-throw switch under the action of the control signal of the control terminal (5.0); the third controlled single-pole double-throw switch, the third controlled single-pole double-throw switch S 4 (10) The terminal (10.1) is alternately connected to the first contact terminal (10.2) and the second contact terminal (10.3) of the third controlled single-pole double-throw switch under the action of the control signal of the control terminal (10.0);

[0014] The first capacitor, the first capacitor C S (7) is connected in series between the terminal (5.1) of the second controlled single-pole double-throw switch S 2 (5) and the terminal (10.1) of the third controlled single-pole double-throw switch S 4 (10);

[0015] The operational amplifier, the inverting input terminal of the operational amplifier is connected to the second contact terminal (10.3) of the third controlled single-pole double-throw switch S 4 (10), the non-inverting input terminal of the operational amplifier is connected to the circuit ground;

[0016] The first controlled switch, the first controlled switch S 3 (9) The terminal is connected to the inverting input terminal of the operational amplifier, the first controlled switch S 3 (9) The contact terminal is connected to the output terminal of the operational amplifier;

[0017] A second capacitor, the second capacitor C R (8) is connected in series between the inverting input terminal and the output terminal of the operational amplifier.

[0018] Optionally, the output voltage of the all-solid-state MEMS electric field sensor is proportional to the electric field strength to be measured, and the proportionality factor is proportional to the capacitance value of the first capacitor C S (7) and the capacitance value of the second capacitor C R (8).

[0019] Optionally, the area of the first sensing electrode plate is larger than the electrode plate area of the second capacitor C R (8); and / or, the capacitance value of the first capacitor C S (7) is larger than the capacitance value of the second capacitor C R (8); the area of the first sensing electrode plate is larger than the electrode plate area of the third capacitor C S1 (17); and / or, the capacitance value of the third capacitor C S1 (17) is larger than the capacitance value of the fourth capacitor C R1 (18)

[0020] Optionally, the capacitance value of the second capacitor C R (8) is designed as a pF-level capacitor.

[0021] Optionally, the first capacitor C S (7), the second capacitor C R (8) includes a double-layer polysilicon capacitor, a capacitor of different metal layers, an interdigitated metal capacitor of the same layer, or a MOS capacitor.

[0022] The present invention also provides an all-solid-state MEMS electric field sensor, including:

[0023] A second sensing electrode plate, the second sensing electrode plate is arranged on the substrate;

[0024] A second shielding electrode plate, the second shielding electrode plate is arranged above the second sensing electrode plate and exposes the second sensing electrode plate;

[0025] A second shielding wire, the first end of the second shielding wire is connected to the second sensing electrode plate;

[0026] A fourth controlled single-pole double-throw switch, the wiring terminal (14.1) of the fourth controlled single-pole double-throw switch S 11 (14) is connected to the second sensing electrode plate through the second shielding wire; the wiring terminal (14.1) of the fourth controlled single-pole double-throw switch S 11 (14) alternately connects to the fourth controlled single-pole double-throw switch S under the action of the control signal of the control terminal (14.0); 11The first contact terminal (14.2) and the second contact terminal (14.3) of (14) are conducting; the fourth controlled single-pole double-throw switch S 11 The first contact terminal (14.2) of (14) is grounded;

[0027] A first controlled multi-pole single-throw switch, the first controlled multi-pole single-throw switch S 12 (15) is connected to the fourth controlled single-pole double-throw switch S through the third contact terminal (15.4) 11 and the second contact terminal (14.3) of (14), the first controlled multi-pole single-throw switch S 12 The first contact terminal (15.2) of (15) is grounded, and the terminal block (15.1) is grounded through the third capacitor C S1 (17);

[0028] An operational amplifier, the inverting input terminal of the operational amplifier is connected to the second contact terminal (15.3) of the first controlled multi-pole single-throw switch S 12 (15), and the non-inverting input terminal of the operational amplifier is connected to the terminal of the fifth controlled single-pole double-throw switch S 14 (21);

[0029] The fifth controlled single-pole double-throw switch S 14 The first contact terminal (21.2) of (21) is grounded, the fifth controlled single-pole double-throw switch S 14 The second contact terminal (21.3) of (21) is grounded through the power supply V t (22), the fifth controlled single-pole double-throw switch S 14 Under the action of the control signal on the control terminal (21.0), the terminal block (21.1) of (21) alternately conducts with the first contact terminal (21.2) and the second contact terminal (21.3) of the fifth controlled single-pole double-throw switch S 14 ;

[0030] The fourth capacitor C R1 (18), the fourth capacitor C R1 (18) is connected in series between the inverting input terminal and the output terminal of the operational amplifier;

[0031] The second controlled switch S 13 (19), the second controlled switch S 13 The terminal block of (19) is connected to the output terminal of the operational amplifier, the second controlled switch S 13 The contact terminal of (19) is connected to the fourth capacitor C R1 (18);

[0032] The third controlled switch S 10 (11), the third controlled switch S10 The terminal of (11) is connected to the second controlled switch S 13 (19), and the contact terminal of the third controlled switch S 10 The contact terminal of (11) is connected to the ground.

[0033] Optionally, the output voltage of the all-solid-state MEMS electric field sensor is proportional to the electric field strength to be measured, and the proportionality factor is proportional to (U t ·C s1 / C r1 ), where C s1 is the capacitance value of the third capacitor C S1 (17), C r1 is the capacitance value of the fourth capacitor C R1 (18), and U t is the voltage value of the power supply V t (22).

[0034] Optionally, the area of the second sensing plate is larger than the plate area of the third capacitor C S1 (17); and / or, the capacitance value of the third capacitor C S1 (17) is larger than the capacitance value of the fourth capacitor C R1 (18).

[0035] The present invention also provides a working method for an all-solid-state MEMS electric field sensor, including the following steps:

[0036] State 0, the initial state after power-on, the first controlled switch S 3 (9) is closed, and the connection terminal (5.1) of the second controlled single-pole double-throw switch S 2 (5) is conducted to the first contact terminal (5.2) to be grounded (GND); the connection terminal (4.1) of the first controlled single-pole double-throw switch S 1 (4) is conducted to the first contact terminal (4.2) to be grounded (GND), and the connection terminal (10.1) of the third controlled single-pole double-throw switch S 4 (10) is conducted to the first contact terminal (10.2) to be grounded (GND), and a certain time T 0 is maintained to discharge the accumulated charges including space ionization charges on the first capacitor C S (7), the second capacitor C R (8), and the first sensing plate (2);

[0037] State 1, the connection terminal (10.1) of the third controlled single-pole double-throw switch S 4 (10) is conducted to the first contact terminal (10.2) to be grounded (GND) and remains unchanged, and the second controlled single-pole double-throw switch S 2The terminal (5.1) of (5) is electrically connected to the second contact terminal (5.3), and the first controlled switch S 3 (9) remains closed, and the first controlled single-pole double-throw switch S 1 The terminal (4.1) of (4) is electrically connected to the second contact terminal (4.3) and remains in this state for a certain period of time T 1 ;

[0038] State 2: The first controlled single-pole double-throw switch S 1 The terminal (4.1) of (4) is electrically connected to the first contact terminal (4.2) and grounded (GND), and the second controlled single-pole double-throw switch S 2 The terminal (5.1) of (5) is electrically connected to the first contact terminal (5.2) and grounded (GND), and the third controlled single-pole double-throw switch S 4 The terminal (10.1) of (10) is electrically connected to the second contact terminal (10.3), and the first controlled switch S 3 (9) is opened and remains in this state for a certain period of time T 2 ;

[0039] State 3: The first controlled switch S 3 (9) is closed, and the second controlled single-pole double-throw switch S 2 The terminal (5.1) of (5) is electrically connected to the first contact terminal (5.2) and grounded (GND), and the third controlled single-pole double-throw switch S 4 The terminal (10.1) of (10) is electrically connected to the second contact terminal (10.3) and grounded (GND) remains unchanged, and the first controlled single-pole double-throw switch S 1 The terminal (4.1) of (4) is electrically connected to the first contact terminal (4.2) and grounded (GND) remains unchanged, and remains in this state for a certain period of time T 3 to discharge the first capacitor C S (7), the second capacitor C R and the accumulated charges including the space ionization charges on the first sensing plate (2).

[0040] Optionally, after power-on, it sequentially enters State 1, State 2, and State 3 from the initial state 0, and then cycles between State 1, State 2, State 3, and back to State 1.

[0041] The present invention also provides a working method for a fully solid-state MEMS electric field sensor, including the following steps:

[0042] State 0: The initial state after power-on, the second controlled switch S 13 (19) is opened, the third controlled switch S 10 (11) is closed, and the first controlled multi-pole single-throw switch S 12The terminal (15.1) of (15) is conductively connected to the first contact terminal (15.2) to be grounded (GND), and the fourth controlled single-pole double-throw switch S 11 The terminal (14.1) of (14) is conductively connected to the first contact terminal (14.2) to be grounded (GND), and the fifth controlled single-pole double-throw switch S 14 The terminal (21.1) of (21) is conductively connected to the first contact terminal (21.2) to be grounded (GND) for a certain time T 0 to discharge the third capacitor C S1 (17), the fourth capacitor C R1 (18) and the accumulated charges including the space ionization charges on the second sensing electrode plate (12);

[0043] State 1, the first controlled multi-pole single-throw switch S 12 The terminal (15.1) of (15) is conductively connected to the third contact terminal (15.4), and the fourth controlled single-pole double-throw switch S 11 The terminal (14.1) of (14) is conductively connected to the second contact terminal (14.3) for a certain time T 1 ;

[0044] State 2, the second controlled switch S 13 (19) is closed, the third controlled switch S 10 (11) is opened, and then the first controlled multi-pole single-throw switch S 12 The terminal (15.1) of (15) is conductively connected to the second contact terminal (15.3), and the fourth controlled single-pole double-throw switch S 11 The terminal (14.1) of (14) is conductively connected to the first contact terminal (14.2) to be grounded (GND), and the fifth controlled single-pole double-throw switch S 14 The terminal (21.1) of (21) is conductively connected to the second contact terminal (21.3) for a certain time T 2 ;

[0045] State 3, the second controlled switch S 13 (19) is opened, the third controlled switch S 10 (11) is closed, the first controlled multi-pole single-throw switch S 12 The terminal (15.1) of (15) is conductively connected to the first contact terminal (15.2) to be grounded (GND), and the fourth controlled single-pole double-throw switch S 11 The terminal (14.1) of (14) is conductively connected to the first contact terminal (14.2) to be grounded (GND), and the fifth controlled single-pole double-throw switch S 14 The terminal (21.1) of (21) is conductively connected to the first contact terminal (21.2) to be grounded (GND); for a certain time T 3 to discharge the third capacitor CS1 (17), the fourth capacitor C R1 (18) and the accumulated charges including space ionization charges on the second sensing electrode plate (12).

[0046] Optionally, under the action of a control signal, after being powered on, the all-solid-state electric field sensor sequentially enters states 1, 2, and 3 starting from the initial state 0, and then cyclically switches from state 1, state 2 to state 3 and then to state 1.

[0047] Beneficial effects: Compared with the prior art, the present invention has the following advantages:

[0048] The electric field sensor of the present invention is an all-solid-state sensor without movable parts. During operation, it does not require the vibration or resonance of components, does not need to apply an excitation signal required for resonance to the sensor, does not need to set an excitation source, the clock signal is not limited by the resonance frequency, has a wide bandwidth, the structure and circuit are simplified, the power consumption is further reduced, the superposition influence of the electric field applied by the circuit during the operation of the existing MEMS sensor on the signal acquisition component is avoided, and the influence of the accumulated charges of the sensor, especially the acquisition component (sensing electrode plate), is eliminated. Therefore, it has low self-noise, good mechanical properties, good seismic resistance, simple structure, small volume, and low energy consumption.

[0049] The processing technology is compatible with CMOS, can be integrally processed and manufactured in batches using CMOS technology, has strong adaptability, good temperature characteristics, good precision stability, and fast dynamic response speed, etc.

[0050] The three-dimensional all-solid-state electric field sensor formed on the basis of the all-solid-state electric field sensor and the integrated all-solid-state electric field sensor of the present invention also realizes the measurement of the three-dimensional components of the electric field. Description of the Drawings

[0051] Figure 1 It is a schematic diagram of the composition of the all-solid-state MEMS electric field sensor according to one embodiment of the present invention;

[0052] Figure 2 It is a schematic diagram of the switch terminal according to one embodiment of the present invention;

[0053] Figure 3 It is a schematic diagram of the composition of the all-solid-state MEMS electric field sensor according to one embodiment of the present invention;

[0054] Figure 4 It is a schematic diagram of the switch terminal according to one embodiment of the present invention;

[0055] Figure 5 It is a top view schematic diagram and a cross-sectional schematic diagram of the all-solid-state MEMS electric field sensor according to one embodiment of the present invention;

[0056] Figure 6Schematic diagram of the working state and working state conversion of the all-solid-state MEMS electric field sensor according to an embodiment of the present invention;

[0057] Figure 7 Top view schematic diagram and cross-sectional schematic diagram of the all-solid-state MEMS electric field sensor according to an embodiment of the present invention. Detailed implementation manners

[0058] To enable those skilled in the art to better understand the technical solutions of the present invention, the present invention will be further described in detail below with reference to the accompanying drawings and specific implementation manners.

[0059] Embodiment 1

[0060] This embodiment proposes an all-solid-state MEMS electric field sensor, as shown in Figure 1 、 2 , including:

[0061] The first sensing electrode plate 2, and the first sensing electrode plate 2 is disposed on the substrate;

[0062] The first shielding electrode plate 1, and the first shielding electrode plate 1 is disposed above the first sensing electrode plate and exposes the first sensing electrode plate 2; that is, the first shielding electrode plate 1 is parallel to the first sensing electrode plate 2 and has a higher position than the sensing electrode plate 2, and the upper surface of the first shielding electrode plate 1 is metal and connected to the circuit ground (GND), so that the first sensing electrode plate 2 is only affected by the electric field in the normal direction.

[0063] The first shielding wire 3, and the first end of the first shielding wire 3 is connected to the first sensing electrode plate 2;

[0064] The first controlled single-pole double-throw switch S 1 (4), the second controlled single-pole double-throw switch S 2 (5), the amplifier 6, the first capacitor C S (7), the second capacitor C R (8), the first controlled switch S 3 (9), the third controlled single-pole double-throw switch S 4 (10) are interconnected below the first shielding electrode plate 1 and are not affected by the electric field to be measured;

[0065] Specifically, the wiring terminal (4.1) of the first controlled single-pole double-throw switch S 1 (4) is connected to the first sensing electrode plate 2 through the first shielding wire 3; the wiring terminal (4.1) of the first controlled single-pole double-throw switch S 1 (4) is alternately conducted with the first contact terminal (4.2) and the second contact terminal (4.3) of the first controlled single-pole double-throw switch S 1 (4) under the action of the control signal of the control terminal (4.0); the first contact terminal (4.2) is grounded;

[0066] The second controlled single-pole double-throw switch S 2 (5) is connected to the second contact terminal (4.3) of the first controlled single-pole double-throw switch S 1 (4) through the second contact terminal (5.3). The wiring terminal (5.1) of the second controlled single-pole double-throw switch S 2 (5) alternately conducts with the first contact terminal (5.2) and the second contact terminal (5.3) of the second controlled single-pole double-throw switch S 2 (5) under the action of the control signal of the control terminal (5.0);

[0067] The third controlled single-pole double-throw switch S 4 (10) The wiring terminal (10.1) alternately conducts with the first contact terminal (10.2) and the second contact terminal (10.3) of the third controlled single-pole double-throw switch S 4 (10) under the action of the control signal of the control terminal (10.0);

[0068] The first capacitor C S (7) is connected in series between the wiring terminal (5.1) of the second controlled single-pole double-throw switch S 2 (5) and the wiring terminal (10.1) of the third controlled single-pole double-throw switch S 4 (10);

[0069] The inverting input terminal of the operational amplifier 6 is connected to the second contact terminal (10.3) of the third controlled single-pole double-throw switch S 4 (10), and the non-inverting input terminal of the operational amplifier is connected to the circuit ground;

[0070] The first controlled switch S 3 (9). The wiring terminal of this first controlled switch is connected to the inverting input terminal of the operational amplifier, and the contact terminal of the first controlled switch is connected to the output terminal of the operational amplifier; When the control signal acts on the control terminal (9.0) of the first controlled switch S 3 (9), S 3 (9) closes and conducts or disconnects;

[0071] The second capacitor C R (8), and the second capacitor C R (8) is connected in series between the inverting input terminal and the output terminal of the operational amplifier.

[0072] Optionally, the output voltage of the all-solid-state MEMS electric field sensor is proportional to the measured electric field strength, and the proportionality factor is related to the capacitance value of the first capacitor C S (7) and the capacitance value of the second capacitor C Ris proportional to the ratio of the capacitance values (Cs / Cr) of (8), and the area of the first sensing electrode plate 2 is larger than that of the first capacitor C S of the electrode plate area of (7), and the first capacitor C S has a capacitance value greater than that of the second capacitor C R of (8), or under the condition of the same electrode plate spacing, the first capacitor C S has an electrode plate area greater than that of the second capacitor C R of (8), and the first capacitor C R The capacitance value Cr of (8) is designed to be a smaller value, such as in the pF range.

[0073] Optionally, the first capacitor and the second capacitor include a double-layer polysilicon capacitor, a different-layer metal capacitor, an in-layer interdigital metal capacitor, or a MOS capacitor.

[0074] Embodiment 2

[0075] This embodiment relates to the working method of the solid-state electric field sensor proposed in Embodiment 1. Specifically, it includes the following steps:

[0076] State 0, the initial state after power-on, the first controlled switch S 3 (9) is closed, and the second controlled single-pole double-throw switch S 2 The wiring terminal (5.1) of (5) is conducted to the first contact terminal (5.2) and grounded (GND); the first controlled single-pole double-throw switch S 1 The wiring terminal (4.1) of (4) is conducted to the first contact terminal (4.2) and grounded (GND); the third controlled single-pole double-throw switch S 4 The wiring terminal (10.1) of (10) is conducted to the first contact terminal (10.2) and grounded (GND), and maintained for a certain time T 0 . To discharge the accumulated charges including space ionization charges on the first capacitor C S (7), the second capacitor C R (8) and the first sensing electrode plate (2).

[0077] State 1, the wiring terminal (10.1) of the third controlled single-pole double-throw switch S 4 (10) is conducted to the first contact terminal (10.2) and grounded (GND) and remains unchanged, the second controlled single-pole double-throw switch S 2 The wiring terminal (5.1) of (5) is conducted to the second contact terminal (5.3), the first controlled switch S 3 (9) remains closed, and the first controlled single-pole double-throw switch S 1 (4) The wiring terminal (4.1) is conducted to the second contact terminal (4.3), and maintained for a certain time T 1 .

[0078] State 2, the first controlled single-pole double-throw switch S 1 The terminal (4.1) of (4) is conducted to the ground (GND) with the first contact terminal (4.2), and the second controlled single-pole double-throw switch S 2 The terminal (5.1) of (5) is conducted to the ground (GND) with the first contact terminal (5.2), and the third controlled single-pole double-throw switch S 4 The terminal (10.1) of (10) is conducted with the second contact terminal (10.3), and the first controlled switch S 3 (9) is opened and maintained for a certain time T 2 .

[0079] State 3, the first controlled switch S 3 (9) is closed, and the second controlled single-pole double-throw switch S 2 The terminal (5.1) of (5) is conducted to the ground (GND) with the first contact terminal (5.2), and the third controlled single-pole double-throw switch S 4 The terminal (10.1) of (10) is conducted to the ground (GND) with the second contact terminal (10.3) unchanged, and the first controlled single-pole double-throw switch S 1 The terminal (4.1) of (4) is conducted to the ground (GND) with the first contact terminal (4.2) unchanged and maintained for a certain time T 3 ; to discharge the accumulated charges including the space ionization charges on the first capacitor C S (7), the second capacitor C R (8) and the first sensing plate (2).

[0080] Optionally, after power-on, it sequentially enters State 1, State 2, and State 3 from the initial state 0, and then circulates from State 1, State 2 to State 3 and then to State 1, as Figure 6 shown.

[0081] Embodiment 3

[0082] This embodiment proposes a fully solid-state electric field sensor, which has different device compositions compared with Embodiment 1. Specifically, as Figure 3-4 shown.

[0083] A fully solid-state MEMS electric field sensor, comprising:

[0084] A second sensing plate 12, which is disposed on the substrate;

[0085] A second shielding plate 20, which is disposed above the second sensing plate 12 and exposes the second sensing plate 12;

[0086] A second shielding wire 13, the first end of which is connected to the second sensing plate 12;

[0087] The fourth controlled single-pole double-throw switch 14, the wiring terminal 14.1 of the fourth controlled single-pole double-throw switch 14 is connected to the second sensing plate 12 through the second shielded wire 13; the fourth controlled single-pole double-throw switch S 11 (14)'s wiring terminal 14.1 is alternately conducted with the first contact terminal (14.2) and the second contact terminal (14.3) under the action of the control signal of the control terminal (14.0); the first contact terminal (14.2) is grounded;

[0088] The first controlled multi-pole single-throw switch 15, the first controlled multi-pole single-throw switch 15 is connected to the second contact terminal (14.3) of the fourth controlled single-pole double-throw switch through the third contact terminal (15.4), the first controlled multi-pole single-throw switch S 12 (15)'s first contact terminal (15.2) is grounded, and the wiring terminal (15.1) is grounded through the third capacitor C S1 (17);

[0089] The wiring terminal (5.1) of the first controlled multi-pole single-throw switch 15 is alternately conducted with the first contact terminal (5.2) and the second contact terminal (5.3) of the second controlled single-pole double-throw switch under the action of the control signal of the control terminal (5.0).

[0090] The operational amplifier 16, the inverting input terminal of the operational amplifier 16 is connected to the second contact terminal (15.3) of the first controlled multi-pole single-throw switch 15, and the non-inverting input terminal of the operational amplifier is connected to the wiring terminal of the fifth controlled single-pole double-throw switch S 14 (21);

[0091] The first contact terminal (21.2) of the fifth controlled single-pole double-throw switch is grounded, the second contact terminal (21.3) of the fifth controlled single-pole double-throw switch is grounded through the power supply V t (22), the fifth controlled single-pole double-throw switch S 14 (21)'s wiring terminal (21.1) is alternately conducted with the first contact terminal (21.2) and the second contact terminal (21.3) under the action of the control signal on the control terminal (21.0);

[0092] The fourth capacitor C R1 (18), the fourth capacitor C R1 (18) is connected in series between the inverting input terminal and the output terminal of the operational amplifier;

[0093] The second controlled switch S 13 (19), the second controlled switch S 13 (19)'s wiring terminal is connected to the output terminal of the operational amplifier, the second controlled switch S13 The contact terminal of (19) is connected to the fourth capacitor C R1 (18);

[0094] The third controlled switch S 10 (11), and the connection terminal of the third controlled switch S 10 (11) is connected to the contact terminal of the second controlled switch S 13 (19), and the contact terminal of the third controlled switch S 10 (11) is connected to the ground.

[0095] Optionally, the output voltage of the all-solid-state MEMS electric field sensor is proportional to the electric field strength to be measured, and the proportionality factor is proportional to (U t ·C s1 / C r1 ), where C s1 is the capacitance value of the third capacitor C S1 (17), C r1 is the capacitance value of the fourth capacitor C R1 (18), and U t is the voltage value of the power supply V t (22).

[0096] Optionally, the area of the second sensing plate is larger than the plate area of the third capacitor; and / or, the capacitance value of the third capacitor is larger than the capacitance value of the fourth capacitor.

[0097] Embodiment 4

[0098] This embodiment relates to the working method of the solid-state electric field sensor proposed in Embodiment 3. Specifically, it includes the following steps:

[0099] State 0, the initial state after power-on. The second controlled switch S 13 (19) is open, the third controlled switch S 10 (11) is closed, the connection terminal (15.1) of the first controlled single-pole multi-throw switch S 12 (15) is conducted to the first contact terminal (15.2) to be grounded (GND), the connection terminal (14.1) of the fourth controlled single-pole double-throw switch S 11 (14) is conducted to the first contact terminal (14.2) to be grounded (GND), the connection terminal (21.1) of the fifth controlled single-pole double-throw switch S 14 (21) is conducted to the first contact terminal (21.2) to be grounded (GND), and it is maintained for a certain time T 0 , so as to discharge the accumulated charges including space ionization charges on the third capacitor C S1 (17), the fourth capacitor C R1 (18) and the second sensing plate (12);

[0100] State 1, the first controlled single-pole multi-throw switch S 12 The terminal (15.1) of (15) is conducted with the third contact terminal (15.4), and the fourth controlled single-pole double-throw switch S 11 The terminal (14.1) of (14) is conducted with the second contact terminal (14.3) and maintained for a certain time T 1 ;

[0101] State 2, the second controlled switch S 13 (19) is closed, the third controlled switch S 10 (11) is opened, and then the first controlled single-pole multi-throw switch S 12 The terminal (15.1) of (15) is conducted with the second contact terminal (15.3), and the fourth controlled single-pole double-throw switch S 11 The terminal (14.1) of (14) is conducted with the first contact terminal (14.2) and grounded (GND), and the fifth controlled single-pole double-throw switch S 14 The terminal (21.1) of (21) is conducted with the second contact terminal (21.3) and maintained for a certain time T 2 ;

[0102] State 3, the second controlled switch S 13 (19) is opened, the third controlled switch S 10 (11) is closed, the first controlled single-pole multi-throw switch S 12 The terminal (15.1) of (15) is conducted with the first contact terminal (15.2) and grounded (GND), the fourth controlled single-pole double-throw switch S 11 The terminal (14.1) of (14) is conducted with the first contact terminal (14.2) and grounded (GND), and the fifth controlled single-pole double-throw switch S 14 The terminal (21.1) of (21) is conducted with the first contact terminal (21.2) and grounded (GND); maintained for a certain time T 3 to discharge the third capacitor C S1 (17), the fourth capacitor C R1 (18) and the accumulated charges including space ionization charges on the second sensing plate (12);

[0103] Optionally, after power-on, it sequentially enters State 1, State 2, and State 3 from the initial state 0, and then cycles and switches from State 1, State 2 to State 3 and then to State 1; as Figure 6 shown.

[0104] Embodiment 5

[0105] This embodiment corresponds to the preparation method of the solid-state electric field sensor in Embodiment 1. The processing method uses CMOS integrated circuit technology. In the first step, it is processed according to the normal CMOS integrated circuit process, and the first layer of metal used as the first sensing electrode plate (2) is deposited on the field oxide and patterned. In the second step, when depositing the second layer of metal, the first layer of metal used as the first sensing electrode plate (2) is in direct contact with the deposited second layer of metal without an intermediate dielectric layer, and then it is patterned. In the third step, after the metal layer deposition and passivation layer deposition and planarization of the above-mentioned first and second steps of the CMOS process are completed, one or multiple layers of metal are deposited, and the surface is preferably gold. In the fourth step, the metal deposited in the third step is patterned by a lift-off process, that is, the deposited metal in the third step located above the first sensing electrode plate (2) and the PAD position is removed. In the fifth step, the passivation layer is opened by windowing, that is, the passivation layer exposed above the first sensing electrode plate (2) and the PAD is etched away to expose the corresponding metal layer. In the sixth step, after coating a protective layer on the front side, the silicon on the back of the first sensing electrode plate (2) is etched away by a deep silicon etching process, and the field oxide below the first sensing electrode plate (2) is removed by a wet etching or dry etching process, so that the upper and lower surfaces of the metal of the first sensing electrode plate (2) are exposed, but the four sides or at least two pairs of sides of the first sensing electrode plate (2) are still embedded in the chip.

[0106] The top view schematic diagram and cross-sectional schematic diagram after processing are as Figure 5 shown. Only one PAD is shown in the figure, and the other first controlled single-pole double-throw switch S 1 (4), the second controlled single-pole double-throw switch S 2 (5), the amplifier (6), the first capacitor C S (7), the second capacitor C R (8), the first controlled switch S 3 (9), the third controlled single-pole double-throw switch S 4 (10) are not shown.

[0107] Embodiment 6

[0108] This embodiment corresponds to the preparation method of the all-solid-state MEMS electric field sensor in Embodiment 3. It is characterized in that the processing method uses the CMOS integrated circuit process. In the first step, it is processed according to the normal CMOS integrated circuit process, and the first layer of metal used as the second sensing electrode plate (12) is deposited on the field oxide and patterned. In the second step, when depositing the second layer of metal, the first layer of metal used as the second sensing electrode plate (12) is in direct contact with the deposited second layer of metal without an intermediate dielectric layer, and then it is patterned. In the third step, after the metal layer deposition and the CMOS passivation layer deposition and planarization of the above-mentioned first and second steps of the CMOS process are completed, another layer of metal is deposited, and its surface is preferably gold. In the fourth step, the deposited metal described in the third step on the stripping photoresist above the second sensing electrode plate (12) and the sensor lead PAD position is etched away by the stripping process. In the fifth step, the passivation layer is opened, that is, the passivation layer on the second sensing electrode plate (12) and the PAD is etched away to expose the corresponding metal layer. In the sixth step, after coating the protective layer on the front side, the silicon on the back of the second sensing electrode plate (12) is etched away by the deep silicon etching process to expose the upper and lower surfaces of the second sensing electrode plate (12).

[0109] Beneficial effects: Compared with the prior art, the present invention has the following advantages:

[0110] The electric field sensor of the present invention is an all-solid-state sensor without movable parts. During operation, it does not require the vibration or resonance of components, does not need to apply an excitation signal required for resonance to the sensor, does not need to set an excitation source, the clock signal is not limited by the resonance frequency, has a wide bandwidth, the structure and circuit are simplified, the power consumption is further reduced, the superposition influence of the electric field applied by the circuit during the operation of the existing MEMS sensor on the signal acquisition component is avoided, and the influence of the accumulated charge of the sensor, especially the acquisition component (sensing electrode plate), is eliminated. Therefore, it has low self-noise, good mechanical properties, good seismic resistance, simple structure, small volume, and low energy consumption.

[0111] The processing technology is compatible with CMOS, can be integrated and batch-manufactured using the CMOS process, has strong adaptability, good temperature characteristics, good precision stability, and fast dynamic response speed, etc.

[0112] The three-dimensional all-solid-state electric field sensor formed on the basis of the all-solid-state electric field sensor and the integrated all-solid-state electric field sensor of the present invention also realizes the measurement of the three-dimensional components of the electric field.

[0113] It can be understood that the above embodiments are only exemplary embodiments adopted to illustrate the principle of the present invention. However, the present invention is not limited thereto. For those of ordinary skill in the art, various modifications and improvements can be made without departing from the spirit and essence of the present invention, and these modifications and improvements are also regarded as the protection scope of the present invention.

Claims

1. A fully solid-state MEMS electric field sensor, characterized in that, it includes: A first sensing electrode plate, which is arranged on a substrate; A first shielding plate, which is arranged above the first sensing electrode plate and exposes the first sensing electrode plate; A first shielding wire, the first end of which is connected to the first sensing electrode plate; The first controlled single-pole double-throw switch S 1 (4), the first controlled single-pole double-throw switch S 1 (4)'s terminal (4.1) is connected to the first sensing electrode plate through a first shielded wire; the first controlled single-pole double-throw switch S 1 (4)'s terminal (4.1), under the action of the control signal of the control terminal (4.0), alternately conducts with the first contact terminal (4.2) and the second contact terminal (4.3) of the first controlled single-pole double-throw switch S 1 (4); the first contact terminal (4.2) of the first controlled single-pole double-throw switch S 1 (4) is grounded; The second controlled single-pole double-throw switch S 2 (5), the second controlled single-pole double-throw switch S 2 (5) is connected to the second contact terminal (4.3) of the first controlled single-pole double-throw switch S 2 (4) through one of its contact terminals. The wiring terminal (5.1) of the second controlled single-pole double-throw switch S 2 (5) is alternately connected to the first contact terminal (5.2) and the second contact terminal (5.3) of the second controlled single-pole double-throw switch S 2 (5) under the action of the control signal at the control terminal (5.0); the first contact terminal (5.2) of the second controlled single-pole double-throw switch S 2 (5) is grounded; The third controlled single-pole double-throw switch S 4 (10), the wiring terminal (10.1) of the third controlled single-pole double-throw switch S 4 (10) is alternately connected to the first contact terminal (10.2) and the second contact terminal (10.3) of the third controlled single-pole double-throw switch S 4 (10) under the action of the control signal of the control terminal (10.0); the first contact terminal (10.2) of the third controlled single-pole double-throw switch S 4 (10) is grounded; The first capacitor C S (7), the first capacitor C S (7) is connected in series between the terminal (5.1) of the second controlled single-pole double-throw switch S 2 (5) and the terminal (10.1) of the third controlled single-pole double-throw switch S 4 (10); An operational amplifier, the inverting input terminal of the operational amplifier is connected to the second contact terminal (10.3) of the third controlled single-pole double-throw switch S 4 (10), and the non-inverting input terminal of the operational amplifier is connected to the circuit ground; The first controlled switch S 3 (9), the first controlled switch S 3 (9)'s connection terminal is connected to the inverting input terminal of the operational amplifier, and the first controlled switch S 3 (9)'s contact terminal is connected to the output terminal of the operational amplifier; Second capacitor C R (8), said second capacitor C R (8) is connected in series between the inverting input terminal and the output terminal of the operational amplifier.

2. The fully solid-state MEMS electric field sensor according to claim 1, characterized in that, The output voltage of the all-solid-state MEMS electric field sensor is proportional to the electric field strength to be measured, and the proportionality factor is proportional to the ratio of the capacitance value of the first capacitor C S (7) to the capacitance value of the second capacitor C R (8).

3. The fully solid-state MEMS electric field sensor according to claim 1, characterized in that, The area of the first sensing electrode plate is larger than the electrode plate area of the second capacitor C R (8); and / or, the capacitance value of the first capacitor C S (7) is larger than the capacitance value of the second capacitor C R (8).

4. The fully solid-state MEMS electric field sensor according to claim 3, characterized in that, The capacitance value of the second capacitor C R (8) is designed as a pF-level capacitor.

5. The fully solid-state MEMS electric field sensor according to claim 1, characterized in that, The first capacitor C S (7), the second capacitor C R (8) includes a double-layer polysilicon capacitor, a capacitor of different metal layers, an interdigital metal capacitor of the same layer, or a MOS capacitor.

6. A fully solid-state MEMS electric field sensor, characterized in that, it includes: A second sensing electrode plate, which is arranged on a substrate; A second shielding electrode plate, which is arranged above the second sensing electrode plate and exposes the second sensing electrode plate; A second shielding wire, the first end of which is connected to the second sensing electrode plate; The fourth controlled single-pole double-throw switch S 11 (14), the wiring terminal (14.1) of the fourth controlled single-pole double-throw switch S 11 (14) is connected to the second sensing plate through a second shielded wire; the fourth controlled single-pole double-throw switch S 11 (14), under the action of the control signal of the control terminal (14.0), alternately conducts with the first contact terminal (14.2) and the second contact terminal (14.3) of the fourth controlled single-pole double-throw switch S 11 (14); the first contact terminal (14.2) of the fourth controlled single-pole double-throw switch S 11 (14) is grounded; The first controlled single-pole multi-throw switch S 12 (15), the first controlled single-pole multi-throw switch S 12 (15) is connected to the second contact terminal (14.3) of the fourth controlled single-pole double-throw switch S 11 (14) through the third contact terminal (15.4), and the first contact terminal (15.2) of the first controlled single-pole multi-throw switch S 12 (15) is grounded, and the wiring terminal (15.1) of the first controlled single-pole multi-throw switch S 12 (15) is grounded through the third capacitor C S1 (17); An operational amplifier, the inverting input terminal of the operational amplifier is connected to the second contact terminal (15.3) of the first controlled single-pole multi-throw switch S 12 (15), and the non-inverting input terminal of the operational amplifier is connected to the terminal of the fifth controlled single-pole double-throw switch S 14 (21); The fifth controlled single-pole double-throw switch S 14 The first contact terminal (21.2) of (21) is grounded, and the fifth controlled single-pole double-throw switch S 14 The second contact terminal (21.3) of (21) is grounded through the power supply V t The fifth controlled single-pole double-throw switch S 14 Under the action of the control signal on the control terminal (21.0), the connection terminal (21.1) of the fifth controlled single-pole double-throw switch S 14 is alternately conducted with the first contact terminal (21.2) and the second contact terminal (21.3) of the fifth controlled single-pole double-throw switch S Fourth capacitor C R1 (18), the fourth capacitor C R1 (18) has one end connected to the inverting input terminal of the operational amplifier; The second controlled switch S 13 (19), the second controlled switch S 13 (19)'s connection terminal is connected to the output terminal of the operational amplifier, and the second controlled switch S 13 (19)'s contact terminal is connected to the other end of the fourth capacitor C R1 (18); The third controlled switch S 10 (11), the wiring terminals of the third controlled switch S 10 (11) are connected to the contact terminals of the second controlled switch S 13 (19), and the contact terminals of the third controlled switch S 10 (11) are connected to the ground.

7. The fully solid-state MEMS electric field sensor according to claim 6, characterized in that, The output voltage of the all-solid-state MEMS electric field sensor is proportional to the measured electric field strength, and the proportionality factor is proportional to (U t ·C s1 / C r1 ), where C s1 is the capacitance value of the third capacitor C S1 (17), C r1 is the capacitance value of the fourth capacitor C R1 (18), and U t is the voltage value of the power supply V t (22).

8. The fully solid-state MEMS electric field sensor according to claim 6, characterized in that, The area of the second sensing electrode plate is larger than that of the electrode plate of the third capacitor C S1 (17); and / or, the capacitance value of the third capacitor C S1 (17) is larger than the capacitance value of the fourth capacitor C R1 (18).

9. A working method of the fully solid-state MEMS electric field sensor according to claim 1, characterized in that, it includes the following steps: State 0, the initial state after power-on, the first controlled switch S 3 (9) is closed, and the second controlled single-pole double-throw switch S 2 The terminal (5.1) of (5) is conductively connected to the first contact terminal (5.2) of the second controlled single-pole double-throw switch S 2 (5) is grounded (GND); the terminal (4.1) of the first controlled single-pole double-throw switch S 1 (4) is conductively connected to the first contact terminal (4.2) of the first controlled single-pole double-throw switch S 1 (4) is grounded (GND), and the terminal (10.1) of the third controlled single-pole double-throw switch S 4 (10) is conductively connected to the first contact terminal (10.2) of the third controlled single-pole double-throw switch S 4 (10) is grounded (GND) and maintained for a certain time T 0 ; State 1, the third controlled single-pole double-throw switch S 4 The terminal (10.1) of (10) is electrically connected to the third controlled single-pole double-throw switch S 4 The first contact terminal (10.2) of (10) is grounded (GND) and remains unchanged, and the second controlled single-pole double-throw switch S 2 The terminal (5.1) of (5) is electrically connected to the second controlled single-pole double-throw switch S 2 The second contact terminal (5.3) of (5) is electrically connected, and the first controlled switch S 3 (9) remains closed, and the first controlled single-pole double-throw switch S 1 The terminal (4.1) of (4) is electrically connected to the first controlled single-pole double-throw switch S 1 The second contact terminal (4.3) of (4) is electrically connected and maintained for a certain time T 1 ; State 2, the first controlled single-pole double-throw switch S 1 The terminal (4.1) of (4) is electrically connected to the first contact terminal (4.2) of the first controlled single-pole double-throw switch S 1 to ground (GND), the terminal (5.1) of the second controlled single-pole double-throw switch S 2 The terminal (5.1) of (5) is electrically connected to the first contact terminal (5.2) of the second controlled single-pole double-throw switch S 2 to ground (GND), the terminal (10.1) of the third controlled single-pole double-throw switch S 4 The terminal (10.1) of (10) is electrically connected to the second contact terminal (10.3) of the third controlled single-pole double-throw switch S 4 The first controlled switch S 3 (9) is turned on and maintained for a certain period of time T 2 ; State 3, the first controlled switch S 3 (9) Closed, the second controlled single-pole double-throw switch S 2 The terminal (5.1) of (5) is conducted to the first contact terminal (5.2) of the second controlled single-pole double-throw switch S 2 (5) is grounded (GND), and the terminal (10.1) of the third controlled single-pole double-throw switch S 4 (10) is conducted to the second contact terminal (10.3) of the third controlled single-pole double-throw switch S 4 (10) is grounded (GND) unchanged, and the terminal (4.1) of the first controlled single-pole double-throw switch S 1 (4) is conducted to the first contact terminal (4.2) of the first controlled single-pole double-throw switch S 1 (4) is grounded (GND) unchanged, and a certain time T is maintained 3 .

10. The working method of the fully solid-state MEMS electric field sensor according to claim 9, characterized in that, Under the action of a control signal, after being powered on, the fully solid-state electric field sensor sequentially enters states 1, 2, and 3 from the initial state 0, and then cycles and switches from state 1, state 2 to state 3 and then to state 1.

11. A working method of the fully solid-state MEMS electric field sensor according to claim 6, characterized in that, it includes the following steps: State 0, the initial state after power-on, the second controlled switch S 13 (19) is turned on, the third controlled switch S 10 (11) is closed, the first controlled single-pole multi-throw switch S 12 The terminal (15.1) of (15) is conducted to the first contact terminal (15.2) of the first controlled single-pole multi-throw switch S to be grounded (GND), the fourth controlled single-pole double-throw switch S 12 The terminal (14.1) of (14) is conducted to the first contact terminal (14.2) of the fourth controlled single-pole double-throw switch S to be grounded (GND), the fifth controlled single-pole double-throw switch S 11 The terminal (14.1) of (14) is conducted to the first contact terminal (14.2) of the fourth controlled single-pole double-throw switch S 11 is conducted to be grounded (GND), the fifth controlled single-pole double-throw switch S 14 The terminal (21.1) of (21) is conducted to the first contact terminal (21.2) of the fifth controlled single-pole double-throw switch S 14 is conducted to be grounded (GND) for a certain period of time T 0 ; State 1, the first controlled single-pole multi-throw switch S 12 The terminal (15.1) of (15) is electrically connected to the first controlled single-pole multi-throw switch S 12 The third contact terminal (15.4) of (15) is electrically connected, and the fourth controlled single-pole double-throw switch S 11 The terminal (14.1) of (14) is electrically connected to the fourth controlled single-pole double-throw switch S 11 The second contact terminal (14.3) of (14) is electrically connected, and maintained for a certain time T 1 ; State 2, second controlled switch S 13 (19) is closed, third controlled switch S 10 (11) is open, then the first controlled single-pole multi-throw switch S 12 The terminal (15.1) of (15) is conducted with the second contact terminal (15.3) of the first controlled single-pole multi-throw switch S 12 (15), the terminal (14.1) of the fourth controlled single-pole double-throw switch S 11 (14) is conducted with the first contact terminal (14.2) of the fourth controlled single-pole double-throw switch S 11 (14) to ground (GND), the terminal (21.1) of the fifth controlled single-pole double-throw switch S 14 (21) is conducted with the second contact terminal (21.3) of the fifth controlled single-pole double-throw switch S 14 (21) for a certain period of time T 2 ; State 3, second controlled switch S 13 (19) Turn on, third controlled switch S 10 (11) Close, first controlled single-pole multi-throw switch S 12 The terminal (15.1) of (15) is conducted to ground (GND) with the first contact terminal (15.2) of the first controlled single-pole multi-throw switch S 12 The terminal (14.1) of (14) is conducted to ground (GND) with the first contact terminal (14.2) of the fourth controlled single-pole double-throw switch S 11 The terminal (14.1) of (14) is conducted to ground (GND) with the first contact terminal (14.2) of the fourth controlled single-pole double-throw switch S 11 The terminal (21.1) of (21) is conducted to ground (GND) with the first contact terminal (21.2) of the fifth controlled single-pole double-throw switch S 14 The terminal (21.1) of (21) is conducted to ground (GND) with the first contact terminal (21.2) of the fifth controlled single-pole double-throw switch S 14 Conduct to ground (GND); maintain for a certain time T 3 .

12. The working method of the fully solid-state MEMS electric field sensor according to claim 11, characterized in that Under the action of a control signal, after being powered on, the fully solid-state electric field sensor sequentially enters states 1, 2, and 3 from the initial state 0, and then cycles and switches from state 1, state 2 to state 3 and then to state 1.

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