Display structure and method of manufacturing the same

Abstract

A display structure includes a first substrate, a second substrate, a first bump, a light emitting unit, a communication post, a second bump and a third bump. The second substrate is disposed on the first substrate. The first bump is disposed on a top surface of the second substrate. The light emitting unit is disposed on the first bump. The communication post fills a through hole that penetrates the first substrate and the second substrate. The second bump is disposed on the top surface of the second substrate and connects the communication post. A thickness of the second bump is greater than a thickness of the first bump. The third bump is disposed on a bottom surface of the first substrate and connects the communication post.

Description

Technical Field

[0001] This invention relates to a display structure and a method for manufacturing the same. Background Technology

[0002] As current-driven functions increase, the component configuration in display structures becomes more complex, leading to more intricate in-plane wiring and consequently, space constraints. Furthermore, because the substrates currently used for wiring are flexible boards, they are subject to expansion and contraction issues, making it difficult to control substrate flatness and resulting in poor via overlap and plating misalignment. Developing a display structure and manufacturing method that can solve these problems is one of the issues that the industry urgently needs to address through research and development. Summary of the Invention

[0003] In view of this, one object of the present invention is to provide a display structure and a method for manufacturing the same that can solve the above problems.

[0004] To achieve the above objectives, according to one embodiment of the present invention, a display structure includes a first substrate, a second substrate, a first bump, a light-emitting unit, a connecting post, a second bump, and a third bump. The second substrate is disposed on the first substrate. The first bump is disposed on the top surface of the second substrate. The light-emitting unit is disposed on the first bump. The connecting post fills a through-hole penetrating both the first and second substrates. The second bump is disposed on the top surface of the second substrate and connects to the connecting post. The thickness of the second bump is greater than the thickness of the first bump. The third bump is disposed on the bottom surface of the first substrate and connects to the connecting post.

[0005] In one or more embodiments of the present invention, the display structure further includes a first seed layer and a second seed layer. The first seed layer is located between a first bump and a second substrate, and between a second bump and a second substrate. The second seed layer is located between a connecting post and a through hole, and between a third bump and a first substrate.

[0006] In one or more embodiments of the present invention, the thickness difference between the thickness of the second bump and the thickness of the first bump is greater than 0.5 micrometers.

[0007] In one or more embodiments of the present invention, the width of the third protrusion is greater than the width of the second protrusion.

[0008] In one or more embodiments of the present invention, the width of the third bump is greater than 17 micrometers.

[0009] In one or more embodiments of the present invention, viewed from above, the second protrusion is located around the first protrusion.

[0010] In one or more embodiments of the present invention, the thickness of the second bump is greater than the sum of the thickness of the first bump and the thickness of the light-emitting unit.

[0011] In one or more embodiments of the present invention, the display structure further includes an active element, and the active element is located in a second substrate.

[0012] In one or more embodiments of the present invention, the active element is connected to the first protrusion via a contact.

[0013] In one or more embodiments of the present invention, the active element is a thin-film transistor.

[0014] To achieve the above objectives, according to one embodiment of the present invention, a method for manufacturing a display structure includes: providing a glass substrate, a first substrate, and a second substrate, wherein the first substrate is located on the glass substrate, and the second substrate is located on the first substrate; forming a first photoresist layer above the second substrate, wherein the first photoresist layer has a plurality of cutouts; filling the cutouts of the first photoresist layer with a first conductive material; removing the first photoresist layer and etching back the first conductive material to form a patterned first conductive material; removing the glass substrate; forming through-holes through the first conductive material, the first substrate, and the second substrate by etching; forming a second photoresist layer on the top surface of the second substrate and a third photoresist layer on the bottom surface of the first substrate, wherein the second photoresist layer and the third photoresist layer have ... forming a first photoresist layer on the top surface of the second substrate and a third photoresist layer on the bottom surface of the first substrate, wherein the second photoresist layer and the third photoresist layer have a plurality of cutouts; forming a first photoresist layer on the top surface of the second substrate and a second photoresist layer on the bottom surface of the first substrate, wherein the second photoresist layer and the third photoresist layer have a plurality of cutouts; forming a first photoresist layer on the top surface of the second substrate and a second photoresist layer on the bottom surface of the first substrate, wherein the second photoresist layer and the third photoresist layer have a plurality of cutouts; forming a first photoresist layer on the top surface of the second substrate and a second photoresist layer on Each photoresist layer has a cutout portion. The cutout portions of the second photoresist layer and the third photoresist layer are respectively connected to the two ends of the through hole, and the height of the cutout portion of the second photoresist layer is greater than the thickness of the first conductive material. The second conductive material is filled into the cutout portion of the second photoresist layer, the through hole, and the cutout portion of the third photoresist layer, wherein the second conductive material forms a connecting pillar in the through hole, and the second conductive material is the same as the first conductive material. The second photoresist layer and the third photoresist layer are removed to form a patterned second conductive material. The patterned first conductive material and the patterned second conductive material are etched back to form a first bump, a second bump, and a third bump. The light-emitting unit is disposed on the first bump, and the thickness of the second bump is greater than the thickness of the first bump.

[0015] In one or more embodiments of the present invention, the method of manufacturing a display structure further includes forming a first seed layer on a second substrate, and the step of forming the first seed layer on the second substrate is performed before the step of forming a first photoresist layer on the second substrate.

[0016] In one or more embodiments of the present invention, the first seed layer is located between the first bump and the second substrate and between the second bump and the second substrate.

[0017] In one or more embodiments of the present invention, the method for manufacturing a display structure further includes forming a second seed layer on the inner surface of the through hole and the bottom surface of the first substrate, and the step of forming the second seed layer on the inner surface of the through hole and the bottom surface of the first substrate is performed before the step of filling the cutout portion of the second photoresist layer, the through hole and the cutout portion of the third photoresist layer with the second conductive material.

[0018] In one or more embodiments of the present invention, the step of forming a second seed layer on the inner surface of the through hole and the bottom surface of the first substrate is performed before the steps of forming a second photoresist layer on the top surface of the second substrate and the second photoresist layer on the bottom surface of the first substrate.

[0019] In one or more embodiments of the present invention, the second seed layer is located between the connecting post and the through hole and between the third bump and the first substrate.

[0020] In one or more embodiments of the present invention, the step of removing the glass substrate is performed after the steps of removing the first photoresist layer and etching back the first conductive material to form a patterned first conductive material.

[0021] In one or more embodiments of the present invention, the width of the third protrusion is greater than the width of the second protrusion.

[0022] In one or more embodiments of the present invention, the steps of filling the first conductive material in the hollow portion of the first photoresist layer and filling the second conductive material in the hollow portion, through-hole, and hollow portion of the third photoresist layer are performed using an electroplating process.

[0023] In one or more embodiments of the present invention, the step of forming a through-hole through the first conductive material, the first substrate and the second substrate by etching utilizes a laser drilling process.

[0024] In one or more embodiments of the present invention, the thickness difference between the thickness of the second bump and the thickness of the first bump is greater than 0.5 micrometers.

[0025] In one or more embodiments of the present invention, viewed from above, the second protrusion is located around the first protrusion.

[0026] In one or more embodiments of the present invention, the thickness of the second bump is greater than the sum of the thickness of the first bump and the thickness of the light-emitting unit.

[0027] In summary, in the display structure and manufacturing method of the present invention, since the display structure undergoes two electroplating processes on both the front and back sides—for example, the second protrusion undergoes two electroplating processes (the first electroplating is on top of the glass substrate, and the second electroplating does not involve the glass substrate)—it can meet the requirement of high yellow light alignment accuracy due to the high resolution required on the front side, and solve the problems of insufficient thickness of the second protrusion located on the front side (the top surface of the second substrate) and through-hole overlap. In the display structure and manufacturing method of the present invention, since there is a height difference between the thickness of the second protrusion and the thickness of the first protrusion, and the second protrusion is disposed around the first protrusion, the rigidity of the light-emitting unit transposition area can be increased, thereby improving the transposition accuracy of the light-emitting unit. In the display structure and manufacturing method of the present invention, since the thickness of the second protrusion is at least greater than the sum of the thickness of the first protrusion and the thickness of the light-emitting unit, the space between the second protrusions can act as a light-concentrating bank for the light-emitting unit, thereby improving the luminous efficiency of the light-emitting unit.

[0028] The present invention will be described in detail below with reference to the accompanying drawings and specific embodiments, but this is not intended to limit the present invention. Attached Figure Description

[0029] Figure 1 A flowchart illustrating a method for manufacturing a display structure according to an embodiment of the present invention is shown.

[0030] Figure 2 A continuation illustrating an embodiment of the present invention is shown. Figure 1 A flowchart of the manufacturing method of the display structure.

[0031] Figure 3 A schematic diagram illustrating an intermediate stage in the manufacture of a display structure according to an embodiment of the present invention.

[0032] Figure 4 A schematic diagram illustrating an intermediate stage in the manufacture of a display structure according to an embodiment of the present invention.

[0033] Figure 5 A schematic diagram illustrating an intermediate stage in the manufacture of a display structure according to an embodiment of the present invention.

[0034] Figure 6 A schematic diagram illustrating an intermediate stage in the manufacture of a display structure according to an embodiment of the present invention.

[0035] Figure 7 A schematic diagram illustrating an intermediate stage in the manufacture of a display structure according to an embodiment of the present invention.

[0036] Figure 8 A schematic diagram illustrating an intermediate stage in the manufacture of a display structure according to an embodiment of the present invention.

[0037] Figure 9 A schematic diagram illustrating an intermediate stage in the manufacture of a display structure according to an embodiment of the present invention.

[0038] Figure 10 A schematic diagram illustrating an intermediate stage in the manufacture of a display structure according to an embodiment of the present invention.

[0039] Figure 11 A schematic diagram illustrating an intermediate stage in the manufacture of a display structure according to an embodiment of the present invention.

[0040] Figure 12 A schematic diagram illustrating an intermediate stage in the manufacture of a display structure according to an embodiment of the present invention.

[0041] Figure 13 A schematic diagram illustrating an intermediate stage in the manufacture of a display structure according to an embodiment of the present invention.

[0042] Figure 14 A schematic diagram illustrating an intermediate stage in the manufacture of a display structure according to an embodiment of the present invention.

[0043] Figure 15 A schematic diagram illustrating an intermediate stage in the manufacture of a display structure according to an embodiment of the present invention.

[0044] Figure 16 A schematic diagram illustrating an intermediate stage in the manufacture of a display structure according to an embodiment of the present invention.

[0045] Figure 17 A top view illustrating a display structure according to another embodiment of the present invention is shown.

[0046] Figure 18 A schematic diagram illustrating a display structure according to another embodiment of the present invention is shown.

[0047] In the attached figures, the following labels are used:

[0048] 100, 100A, 100B: Display Structure

[0049] B1: First bump

[0050] B2: Second bump

[0051] B3: Third bump

[0052] CE: Processing Component

[0053] CH: Channel layer

[0054] CM1: First conductive material

[0055] CM2: Second conductive material

[0056] CT: Contact

[0057] CV: Connecting column

[0058] D: Drain electrode

[0059] G: Gate

[0060] GI: Gate insulating layer

[0061] GS: Glass substrate

[0062] H O2 :high

[0063] ILD: Interlayer Dielectric Layer

[0064] LU: Light-emitting unit

[0065] M: Method

[0066] O1, O2, O3: Hollowed-out sections

[0067] PR1: First photoresist layer

[0068] PR2: Second photoresist layer

[0069] PR3: Third photoresist layer

[0070] PV: Passivation layer

[0071] S: Source

[0072] S1: First substrate

[0073] S1b: Bottom surface

[0074] S2: Second substrate

[0075] S2t: Top surface

[0076] S101, S102, S103, S104, S105, S106, S107, S108, S109, S110, S111: Steps

[0077] SL1: First seed layer

[0078] SL2: Second seed layer

[0079] T: Active component

[0080] T B1 ,T B2 ,T CM1 ,T LU :thickness

[0081] V: Through hole

[0082] Vsi: Inner surface

[0083] W B2 W B3 :width

[0084] X, Y, Z: Direction Detailed Implementation

[0085] The structural and working principles of the present invention will be described in detail below with reference to the accompanying drawings:

[0086] The following describes several embodiments of the present invention with reference to the accompanying drawings. For clarity, many practical details will be described in the following description. However, it should be understood that these practical details are not intended to limit the invention. That is, in some embodiments of the invention, these practical details are not essential. Furthermore, for the sake of simplicity, some conventional structures and elements will be shown in the drawings in a simple schematic manner. The same reference numerals will be used to denote the same or similar elements in all drawings.

[0087] In the diagrams, the thicknesses of layers, films, panels, regions, etc., are enlarged for clarity. Throughout the specification, the same symbolic designations denote the same elements. It should be understood that when an element such as a layer, film, region, or substrate is referred to as being "on" or "connected" to another element, it may be directly on or connected to the other element, or intermediate elements may also be present. Conversely, when an element is referred to as being "directly on" or "directly connected" to another element, no intermediate elements are present. As used herein, "connection" can refer to a physical and / or electrical connection. Furthermore, "electrical connection" or "coupling" may refer to the presence of other elements between two elements.

[0088] It should be understood that although the terms "first," "second," "third," etc., may be used herein to describe various elements, components, regions, layers, and / or parts, these elements, components, regions, and / or parts should not be limited by these terms. These terms are used only to distinguish one element, component, region, layer, or part from another. Therefore, "first element," "component," "region," "layer," or "part" discussed below may be referred to as a second element, component, region, layer, or part without departing from the teachings of this document.

[0089] The terminology used herein is for the purpose of describing particular embodiments only and is not restrictive. As used herein, unless the content clearly indicates otherwise, the singular forms "a," "an," and "the" are intended to include the plural forms, including "at least one." "Or" means "and / or." As used herein, the term "and / or" includes any and all combinations of one or more of the associated listed items. It should also be understood that, when used in this specification, the terms "comprising" and / or "including" specify the presence of the stated features, areas, integrals, steps, operations, elements, and / or components, but do not exclude the presence or addition of one or more other features, areas, integrals, steps, operations, elements, components, and / or combinations thereof.

[0090] Furthermore, relative terms such as "below" or "bottom" and "above" or "top" may be used herein to describe the relationship between one element and another, as illustrated in the figures. It should be understood that relative terms are intended to include different orientations of the device beyond those shown in the figures. For example, if a device in a figure is flipped, an element described as being "below" to other elements will be oriented "above" to other elements. Thus, the exemplary term "below" can include both "below" and "above" orientations, depending on the specific orientation of the figure. Similarly, if a device in a figure is flipped, an element described as being "below" or "below" to other elements will be oriented "above" to other elements. Thus, the exemplary term "below" or "below" can include both "above" and "below" orientations.

[0091] As used herein, “about,” “approximately,” or “substantially” includes the value and the average value within an acceptable range of deviations from a particular value as determined by one of ordinary skill in the art, taking into account the measurement in question and a particular number of errors associated with the measurement (i.e., limitations of the measurement system). For example, “about” may mean within one or more standard deviations of the value, or within ±30%, ±20%, ±10%, ±5%. Furthermore, the use of “about,” “approximately,” or “substantially” herein may be chosen based on the optical, etched, or other properties to select a more acceptable range of deviations or standard deviations, and may not require a single standard deviation to apply to all properties.

[0092] Unless otherwise defined, all terms used herein (including technical and scientific terms) have the same meaning as commonly understood by one of ordinary skill in the art to which this invention pertains. It will be further understood that terms such as those defined in commonly used dictionaries should be interpreted as having meanings consistent with their meanings in the context of the relevant technology and this invention, and will not be interpreted as having idealized or overly formal meanings unless expressly defined herein.

[0093] Please refer to Figure 1 as well as Figure 2 . Figure 1 as well as Figure 2 This is a flowchart of a method M for manufacturing a display structure 100 according to an embodiment of the present invention. Figure 2 As shown, in this embodiment, the manufacturing method M of the display structure 100 includes steps S101, S102, S103, S104, S105, S106, S107, S108, S109, S110, and S111. For a better understanding of step S101, please refer to... Figure 1 as well as Figure 3 For a better understanding of step S102, please refer to... Figure 1 , Figure 4 as well as Figure 5 For a better understanding of step S103, please refer to... Figure 1 as well as Figure 6 For a better understanding of step S104, please refer to... Figure 1 , Figure 7 as well as Figure 8 For a better understanding of step S105, please refer to... Figure 1 as well as Figure 9 For a better understanding of step S106, please refer to... Figure 1 as well as Figure 10 For a better understanding of step S107, please refer to... Figure 2 , Figure 11 as well as Figure 12 For a better understanding of step S108, please refer to... Figure 2 as well as Figure 13 For a better understanding of step S109, please refer to... Figure 2 as well as Figure 14 For a better understanding of step S110, please refer to... Figure 2 as well as Figure 15 For a better understanding of step S111, please refer to... Figure 2 as well as Figure 16 .

[0094] Step S101 is described in detail below.

[0095] In step S101, a glass substrate GS, a first substrate S1, and a second substrate S2 are provided.

[0096] Please refer to Figure 3 . Figure 3 This is a schematic diagram illustrating an intermediate stage in the manufacturing of a display structure 100 according to an embodiment of the present invention. In this embodiment, as... Figure 3 As shown, it provides a glass substrate GS, a first substrate S1, and a second substrate S2. Figure 3As shown, a first substrate S1 is disposed on a glass substrate GS. A second substrate S2 is disposed on the first substrate S1. In some embodiments, the hardness of the glass substrate GS is greater than the hardness of the first substrate S1, and the hardness of the glass substrate GS is greater than the hardness of the second substrate S2. In this embodiment, the glass substrate GS is a hard substrate, and the first substrate S1 and the second substrate S2 are soft substrates. It should be noted that the properties of hardness or softness described herein are relative properties; therefore, soft substrates and hard substrates both have basic support functions.

[0097] In some embodiments, the first substrate S1 may be a plastic material. In some embodiments, the first substrate S1 may be, for example, polyimide (PI) or other suitable materials. In some embodiments, the second substrate S2 may be a silicon-based substrate. In some embodiments, the second substrate S2 may comprise, for example, low-temperature polysilicon (LTPS) or other suitable materials.

[0098] Step S102 is described in detail below.

[0099] In step S102, a first photoresist layer PR1 is formed above the second substrate S2.

[0100] Please refer to Figure 4 as well as Figure 5 . Figure 4 as well as Figure 5 This is a schematic diagram illustrating an intermediate stage in the manufacturing of a display structure 100 according to an embodiment of the present invention. In this embodiment, as... Figure 4 As shown, a first seed layer SL1 is first formed on the second substrate S2. The first seed layer SL1 serves as a conductive layer required for subsequent processes. Next, as... Figure 5 As shown, the first photoresist layer PR1 is formed above the second substrate S2. Specifically, the first photoresist layer PR1 is formed on the first seed layer SL1. Figure 5 As shown, the first photoresist layer PR1 has several cutouts O1.

[0101] In some implementations, the cutout portion O1 can be formed by photolithography or other suitable methods.

[0102] Step S103 is described in detail below.

[0103] In step S103, the first conductive material CM1 is filled into the cutout portion O1 of the first photoresist layer PR1.

[0104] Please refer to Figure 6 . Figure 6This is a schematic diagram illustrating an intermediate stage in the manufacturing of a display structure 100 according to an embodiment of the present invention. In this embodiment, as... Figure 6 As shown, the first conductive material CM1 is formed in the cutout O1 of the first photoresist layer PR1. Specifically, the first conductive material CM1 is located on the first seed layer SL1. In some embodiments, the upper surface of the first conductive material CM1 is not coplanar with the upper surface of the first photoresist layer PR1.

[0105] In some embodiments, the first conductive material CM1 may be a metallic material. In some embodiments, the first conductive material CM1 may be, for example, copper or other suitable conductive materials.

[0106] In some embodiments, the first conductive material CM1 can be formed by an electroplating process or other suitable methods.

[0107] Step S104 is described in detail below.

[0108] In step S104, the first photoresist layer PR1 is removed and the first conductive material CM1 is etched back to form a patterned first conductive material CM1.

[0109] Please refer to Figure 7 as well as Figure 8 . Figure 7 as well as Figure 8 This is a schematic diagram of an intermediate stage in the manufacturing of a display structure 100 according to an embodiment of the present invention. In this embodiment, as... Figure 7 As shown, the first photoresist layer PR1 is removed from above the second substrate S2. Specifically, the first photoresist layer PR1 is removed from the first seed layer SL1. Figure 7 As shown, after the first photoresist layer PR1 is removed, the first conductive material CM1 patterned by the first photoresist layer PR1 remains above the second substrate S2. Specifically, the first conductive material CM1 remains on the first seed layer SL1. Then, as... Figure 8 As shown, the first conductive material CM1 is etched back, and a portion of the first seed layer SL1 is removed. More specifically, the portion of the first seed layer SL1 that is removed refers to the portion of the first seed layer SL1 that was originally located directly below the patterned first photoresist layer PR1. After the first conductive material CM1 is etched back and the portion of the first seed layer SL1 is removed, the final patterned first conductive material CM1 is formed, as shown. Figure 8 As shown.

[0110] In some embodiments, portions of the first photoresist layer PR1 and the first seed layer SL1 can be removed by an etching process (e.g., dry etching or wet etching) or other suitable methods. In some embodiments, the first conductive material CM1 can be etched back by an etching process (e.g., dry etching or wet etching) or other suitable methods.

[0111] In steps S101 to S104, a patterned first conductive material CM1 is formed in the presence of a glass substrate GS. Because the glass substrate GS provides the rigidity of the overall structure, the first conductive material CM1 can be formed more precisely at the target location, thereby meeting the requirements for high resolution.

[0112] Step S105 is described in detail below.

[0113] In step S105, the glass substrate GS is removed.

[0114] Please refer to Figure 9 . Figure 9 This is a schematic diagram of an intermediate stage in the manufacturing of a display structure 100 according to an embodiment of the present invention. Figure 9 As shown, the glass substrate GS is removed, thereby exposing the bottom surface S1b of the first substrate S1. Since a patterned first conductive material CM1 is formed in step S104, the top surface S2t of the second substrate S2 is thus exposed.

[0115] Step S106 is described in detail below.

[0116] In step S106, a through hole V is formed by etching, passing through the first conductive material CM1, the first substrate S1, and the second substrate S2.

[0117] Please refer to Figure 10 . Figure 10 This is a schematic diagram illustrating an intermediate stage in the manufacturing of a display structure 100 according to an embodiment of the present invention. In this embodiment, as... Figure 10 As shown, the through-hole V is formed by etching, and the through-hole V penetrates the first conductive material CM1, the first substrate S1, and the second substrate S2. Figure 10 As shown, the through hole V penetrates the first conductive material CM1, the first substrate S1 and the second substrate S2 and has an inner surface Vsi.

[0118] In some implementations, the through-hole V can be formed using, for example, laser drilling or other suitable methods.

[0119] Step S107 is described in detail below.

[0120] In step S107, a second photoresist layer PR2 is formed on the top surface S2t of the second substrate S2 and a third photoresist layer PR3 is formed on the bottom surface S1b of the first substrate S1.

[0121] Please refer to Figure 11 as well as Figure 12 . Figure 11 as well as Figure 12 This is a schematic diagram illustrating an intermediate stage in the manufacturing of a display structure 100 according to an embodiment of the present invention. In this embodiment, as... Figure 11 As shown, the second seed layer SL2 is first formed on the inner surface Vsi of the via V and the bottom surface S1b of the first substrate S1. The second seed layer SL2 serves as the conductive layer required for subsequent processes. Next, as... Figure 12 As shown, the second photoresist layer PR2 is formed on the top surface S2t of the second substrate S2, and the third photoresist layer PR3 is formed on the bottom surface S1b of the first substrate S1. Specifically, the third photoresist layer PR3 is formed on the second seed layer SL2. Figure 12 As shown, the second photoresist layer PR2 and the third photoresist layer PR3 each have several cutouts O2 and several cutouts O3. Figure 12 As shown, the cutout portion O2 of the second photoresist layer PR2 and the cutout portion O3 of the third photoresist layer PR3 are respectively connected to the two ends of the through hole V. In some embodiments, such as Figure 12 As shown, the height H of the cutout portion O2 in the second photoresist layer PR2 is... O2 The thickness T is greater than that of the first conductive material CM1 CM1 In some implementations, such as Figure 12 As shown, the second photoresist layer PR2 covers the first conductive material CM1, which is not adjacent to the via V.

[0122] In some embodiments, the cutout portions O2 and O3 can be formed by photolithography or other suitable methods.

[0123] Step S108 is described in detail below.

[0124] In step S108, the second conductive material CM2 is filled into the cutout portion O2 and the through hole V of the second photoresist layer PR2 and the cutout portion O3 of the third photoresist layer PR3.

[0125] Please refer to Figure 13 . Figure 13 This is a schematic diagram illustrating an intermediate stage in the manufacturing of a display structure 100 according to an embodiment of the present invention. In this embodiment, as... Figure 13 As shown, the second conductive material CM2 is formed in the cutout portion O2 and the through-hole V of the second photoresist layer PR2, and in the cutout portion O3 of the third photoresist layer PR3. Specifically, the second conductive material CM2 is located on the second seed layer SL2. Figure 13As shown, a connecting pillar CV is formed at the location of the through-hole V filled by the second conductive material CM2. (As illustrated...) Figure 13 As shown, the second conductive material CM2 fills the hollow portion O2, such that the height of the second conductive material CM2 located in the hollow portion O2 is greater than the height of the first conductive material CM1 (i.e., Figure 12 The thickness T shown CM1 In some embodiments, the upper surface of the portion of the second conductive material CM2 located in the cutout O2 is not coplanar with the upper surface of the second photoresist layer PR2. In some embodiments, the upper surface of the portion of the second conductive material CM2 located in the cutout O3 is not coplanar with the upper surface of the third photoresist layer PR3.

[0126] In some embodiments, the second conductive material CM2 may be a metallic material. In some embodiments, the second conductive material CM2 may be, for example, copper or other suitable conductive materials.

[0127] In some embodiments, the second conductive material CM2 can be formed by an electroplating process or other suitable methods.

[0128] In some embodiments, the second conductive material CM2 is the same as the first conductive material CM1. Specifically, the material of the second conductive material CM2 is the same as the material of the first conductive material CM1.

[0129] Step S109 is described in detail below.

[0130] In step S109, the second photoresist layer PR2 and the third photoresist layer PR3 are removed to form a patterned second conductive material CM2.

[0131] Please refer to Figure 14 . Figure 14 This is a schematic diagram illustrating an intermediate stage in the manufacturing of a display structure 100 according to an embodiment of the present invention. In this embodiment, as... Figure 14 As shown, the second photoresist layer PR2 is removed from the second substrate S2, and the third photoresist layer PR3 is removed from above the first substrate S1. Specifically, the third photoresist layer PR3 is removed from the second seed layer SL2. Figure 14 As shown, after the second photoresist layer PR2 and the third photoresist layer PR3 are removed, the second conductive material CM2, patterned by the second photoresist layer PR2 and the third photoresist layer PR3, remains above the second substrate S2 and the first substrate S1. Specifically, the portion of the second conductive material CM2 located above the first substrate S1 and the connecting pillar CV are formed on the second seed layer SL2.

[0132] In some implementations, the second photoresist layer PR2 and the third photoresist layer PR3 can be removed by an etching process (e.g., wet etching) or other suitable methods.

[0133] Step S110 is described in detail below.

[0134] In step S110, the patterned first conductive material CM1 and the patterned second conductive material CM2 are etched back to form a first bump B1, a second bump B2 and a third bump B3.

[0135] Please refer to Figure 15 . Figure 15 This is a schematic diagram illustrating an intermediate stage in the manufacturing of a display structure 100 according to an embodiment of the present invention. In this embodiment, as... Figure 15 As shown, the patterned first conductive material CM1 and the patterned second conductive material CM2 are etched back. Figure 15 As shown, the portion of the second seed layer SL2 is removed. More specifically, the portion of the second seed layer SL2 refers to the portion of the second seed layer SL2 originally located directly below the patterned third photoresist layer PR3. After the patterned first conductive material CM1 and the patterned second conductive material CM2 are etched back and the portion of the second seed layer SL2 is removed, the first bump B1, the second bump B2, and the third bump B3 are formed, as shown. Figure 15 As shown. More specifically, a first bump B1 is formed at the portion of the first conductive material CM1 that is not connected to the connecting post CV, a second bump B2 is formed at the portion of the first conductive material CM1 adjacent to the connecting post CV and the portion of the second conductive material CM2 connected to the connecting post CV, and a third bump B3 is formed at the portion of the second conductive material CM2 connected to the connecting post CV and located above the first substrate S1.

[0136] In some implementations, such as Figure 15 As shown, the first protrusion B1 has a thickness T B1 The second protrusion B2 has a thickness T B2 and width W B2 The third protrusion B3 has a width W B3 In some embodiments, the thickness T of the second protrusion B2 B2 The thickness T is greater than that of the first protrusion B1 B1 In some implementations, the width W of the third protrusion B3 B3 Width W greater than the second protrusion B2 B2 In some embodiments, the thickness T of the second protrusion B2 B2 With the thickness T of the first protrusion B1 B1 The thickness difference is greater than 0.5 micrometers. In some embodiments, the width W of the third protrusion B3 is... B3 Greater than 17 micrometers.

[0137] In some embodiments, portions of the second seed layer SL2 may be removed by an etching process (e.g., dry etching) or other suitable methods. In some embodiments, the first conductive material CM1 and the second conductive material CM2 may be etched back by an etching process (e.g., dry etching) or other suitable methods.

[0138] The following describes step S111 in detail.

[0139] In step S111, the light-emitting unit LU is disposed on the first protrusion B1.

[0140] Please refer to Figure 16 . Figure 16 This is a schematic diagram illustrating an intermediate stage in the manufacturing of a display structure 100 according to an embodiment of the present invention. In this embodiment, as... Figure 16 As shown, after performing step S110 to form the first bump B1, the second bump B2, and the third bump B3, the light-emitting unit LU is then disposed on the first bump B1, thereby forming the display structure 100 of the present invention. In one application scenario, the first bump B1 serves as a transposition area for the light-emitting unit LU, thus allowing the manufacturer to transpose the light-emitting unit LU manufactured on another production line onto the first bump B1. In some embodiments, such as Figure 16 As shown, the thickness T of the second protrusion B2 B2 The thickness T is greater than that of the first protrusion B1 B1 And the thickness T of the light-emitting unit LU LU The sum. Since the upper surface of the light-emitting unit LU is still lower than the upper surface of the second bump B2 after it is transposed onto the first bump B1 (as shown in the image). Figure 16 As shown in the figure, and due to the high reflectivity and high light concentration characteristics of the metal material, the second protrusion B2 located next to the light-emitting unit LU can serve as a light-concentrating bank for the light-emitting unit LU to increase the light emission efficiency of the light-emitting unit LU.

[0141] In some embodiments, the light-emitting unit LU can be a light-emitting diode (LED). In some embodiments, the light-emitting unit LU can be a micro-LED.

[0142] The display structure 100A of another embodiment of the present invention will now be described in detail.

[0143] Please refer to Figure 17 . Figure 17 This is a top view of a display structure 100A according to another embodiment of the present invention. In this embodiment, as... Figure 17As shown, the structural configuration of display structure 100A is roughly similar to that of display structure 100, therefore the detailed structure of display structure 100A will not be described in detail here. The difference between display structure 100A and display structure 100 lies in that one side of display structure 100A (for example, Figure 16 The arrangement shown (located on one side above the second substrate S2) includes several rows and columns of first bumps B1 and second bumps B2. For example, Figure 17 A column (e.g., a column parallel to direction X) may contain several first bumps B1 and second bumps B2. Figure 17 A row (e.g., a column parallel to the Y direction) can contain several first bumps B1 or second bumps B2. For example... Figure 17 As shown in the diagram, viewed from above, the arrangement positions the second protrusion B2 around the first protrusion B1. In one usage scenario, since the second protrusion B2 is positioned around the first protrusion B1, and the thickness T of the second protrusion B2 is... B2 The thickness T is greater than that of the first protrusion B1 B1 This increases the rigidity of the entire display structure 100. Therefore, the manufacturer can more accurately transpose the light-emitting unit LU onto the first bump B1.

[0144] In some implementations, such as Figure 17 As shown, the connecting post CV that connects the second protrusion B2 is along... Figure 17 It extends in the direction Z.

[0145] In some embodiments, the display structure 100A includes a light-emitting unit LU (not shown) above the first bump B1. In embodiments where the second bump B2 is located around the first bump B1, the thickness T of the second bump B2 is... B2 The thickness T is greater than that of the first protrusion B1 B1 And the thickness T of the light-emitting unit LU LU The sum of .

[0146] The display structure 100B of another embodiment of the present invention will now be described in detail.

[0147] Please refer to Figure 18 . Figure 18 This is a schematic diagram of a display structure 100B according to another embodiment of the present invention. In this embodiment, as... Figure 18As shown, the structural configuration of display structure 100B is generally similar to that of display structure 100. The difference between display structure 100B and display structure 100 is that the second substrate S2 of display structure 100B further includes a gate insulating layer GI, an interlayer dielectric layer ILD, and a passivation layer PV. In addition, display structure 100B further includes an active element T, a contact CT, and a processing element CE. The active element T is located in the second substrate S2 and includes a source S, a drain D, a gate G, and a channel layer CH. The gate G is separated from the channel layer CH by the gate insulating layer GI. The source S and drain D are connected to the channel layer CH. The source S and drain D are separated from the gate G by the interlayer dielectric layer ILD, respectively. Figure 18 As shown, the active element T is connected to the first bump B1 via a contact CT. Specifically, the two ends of the contact CT are connected to the first bump B1 and the drain D, respectively.

[0148] In some embodiments, the active element T can be a thin-film transistor (TFT). In some embodiments, the active element T can be, for example, a bottom-gate TFT, a top-gate TFT, or other suitable TFT. In some embodiments, the channel layer CH can be a semiconductor material. In some embodiments, the semiconductor material can be, for example, amorphous silicon, polycrystalline silicon, oxide semiconductor, or other suitable semiconductor materials.

[0149] In some implementations, such as Figure 18 As shown, the connecting pillar CV narrows from top to bottom in the first substrate S1 and the second substrate S2, but the present invention does not intend to limit the shape of the connecting pillar CV.

[0150] In summary, by performing the manufacturing method M of the display structure 100 (display structure 100A or display structure 100B), a display structure 100 (display structure 100A or display structure 100B) with better optical performance can be manufactured.

[0151] From the detailed description of the specific embodiments of the present invention above, it is clear that in the display structure and manufacturing method of the present invention, since the display structure undergoes two electroplating processes on both the front and back sides—for example, the second protrusion undergoes two electroplating processes (the first electroplating is on top of the glass substrate, and the second electroplating does not involve the glass substrate)—it can meet the requirement of high yellow light alignment accuracy due to the high resolution required on the front side, and can solve the problems of insufficient thickness of the second protrusion located on the front side (the top surface of the second substrate) and through-hole overlap. In the display structure and manufacturing method of the present invention, since there is a height difference between the thickness of the second protrusion and the thickness of the first protrusion, and the second protrusion is disposed around the first protrusion, the rigidity of the light-emitting unit transposition area can be increased, thereby improving the transposition accuracy of the light-emitting unit. In the display structure and manufacturing method of the present invention, since the thickness of the second protrusion is at least greater than the sum of the thickness of the first protrusion and the thickness of the light-emitting unit, the space between the second protrusions can serve as a light-concentrating bank for the light-emitting unit, thereby improving the luminous efficiency of the light-emitting unit.

[0152] Of course, the present invention may have other various embodiments. Without departing from the spirit and essence of the present invention, those skilled in the art can make various corresponding changes and modifications according to the present invention, but these corresponding changes and modifications should all fall within the protection scope of the appended claims.

Claims

1. A display structure, characterized in that, Include: First substrate; A second substrate is disposed on the first substrate; A first protrusion is disposed on a top surface of the second substrate; A light-emitting unit is disposed on the first protrusion; A through post fills a through hole that penetrates both the first substrate and the second substrate; A second protrusion is disposed on the top surface of the second substrate and connected to the connecting post, wherein the thickness of the second protrusion is greater than the sum of the thickness of the first protrusion and the thickness of the light-emitting unit; and A third protrusion is disposed on a bottom surface of the first substrate and connected to the connecting post.

2. The display structure as described in claim 1, characterized in that, Further includes: A first seed layer is located between the first bump and the second substrate, and between the second bump and the second substrate; and A second seed layer is located between the connecting post and the through hole, and between the third protrusion and the first substrate.

3. The display structure as described in claim 1, characterized in that, The thickness difference between the second bump and the first bump is greater than 0.5 micrometers.

4. The display structure as described in claim 1, characterized in that, The width of the third protrusion is greater than the width of the second protrusion.

5. The display structure as described in claim 4, characterized in that, The width of the third protrusion is greater than 17 micrometers.

6. The display structure as described in claim 1, characterized in that, Viewed from above, the second protrusion is located around the first protrusion.

7. The display structure as described in claim 1, characterized in that, It further includes an active element, and the active element is located in the second substrate.

8. The display structure as described in claim 7, characterized in that, The active element is connected to the first protrusion via a contact.

9. The display structure as described in claim 7, characterized in that, The active element is a thin-film transistor.

10. A method for manufacturing a display structure, characterized in that, Include: A glass substrate, a first substrate, and a second substrate are provided, wherein the first substrate is located on the glass substrate, and the second substrate is located on the first substrate; A first photoresist layer is formed on the second substrate, wherein the first photoresist layer has several cutouts; A first conductive material is filled into the hollow portions of the first photoresist layer; Remove the first photoresist layer and etch back the first conductive material to form a patterned first conductive material; Remove the glass substrate; A through-hole is formed by etching, passing through the first conductive material, the first substrate, and the second substrate; A second photoresist layer is formed on a top surface of the second substrate and a third photoresist layer is formed on a bottom surface of the first substrate. Each of the second and third photoresist layers has a cutout portion. The cutout portions of the second and third photoresist layers are respectively connected to the two ends of the through hole, and the height of the cutout portion of the second photoresist layer is greater than the thickness of the first conductive material. A second conductive material is filled in the cutout portion of the second photoresist layer, the through hole, and the cutout portion of the third photoresist layer, wherein the second conductive material forms a connecting post in the through hole, and the second conductive material is the same as the first conductive material; Remove the second photoresist layer and the third photoresist layer to form the patterned second conductive material; The first conductive material and the second conductive material are patterned by etch-back to form a first bump, a second bump, and a third bump; and A light-emitting unit is disposed on the first protrusion, and the thickness of the second protrusion is greater than the sum of the thickness of the first protrusion and the thickness of the light-emitting unit.

11. The method as described in claim 10, characterized in that, The method further includes forming a first seed layer on the second substrate, and the step of forming the first seed layer on the second substrate is performed before the step of forming the first photoresist layer on the second substrate.

12. The method as described in claim 11, characterized in that, The first seed layer is located between the first bump and the second substrate, and between the second bump and the second substrate.

13. The method as described in claim 10, characterized in that, The method further includes forming a second seed layer on an inner surface of the through hole and on the bottom surface of the first substrate, and the step of forming the second seed layer on the inner surface of the through hole and on the bottom surface of the first substrate is performed before the step of filling the second conductive material in the cutout portion of the second photoresist layer, the through hole and the cutout portion of the third photoresist layer.

14. The method as described in claim 13, characterized in that, The step of forming the second seed layer on the inner surface of the through hole and the bottom surface of the first substrate is performed before the step of forming the second photoresist layer on the top surface of the second substrate and the second photoresist layer on the bottom surface of the first substrate.

15. The method as described in claim 13, characterized in that, The second seed layer is located between the connecting post and the through hole, and between the third bump and the first substrate.

16. The method as described in claim 10, characterized in that, The step of removing the glass substrate is performed after the steps of removing the first photoresist layer and etching back the first conductive material to form a patterned first conductive material.

17. The method as described in claim 10, characterized in that, The width of the third protrusion is greater than the width of the second protrusion.

18. The method as described in claim 10, characterized in that, The steps of filling the first conductive material into the hollow portions of the first photoresist layer and filling the second conductive material into the hollow portions, the through holes, and the hollow portions of the third photoresist layer are performed using an electroplating process.

19. The method as described in claim 10, characterized in that, The step of forming the through hole by etching through the first conductive material, the first substrate, and the second substrate utilizes a laser drilling process.

20. The method as described in claim 10, characterized in that, The thickness difference between the second bump and the first bump is greater than 0.5 micrometers.

21. The method as described in claim 10, characterized in that, Viewed from above, the second protrusion is located around the first protrusion.

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