Van der waals contact vertical p-n junction diode and preparation method thereof, semiconductor device

By employing van der Waals contacts and a fixed-point transfer method in two-dimensional material vertical pn junction diodes, the problem of interface lattice destruction caused by traditional processes has been solved, realizing high-performance two-dimensional material vertical pn junction diodes suitable for devices such as photodetectors and rectifiers.

CN115863442BActive Publication Date: 2026-06-26HUAZHONG UNIV OF SCI & TECH
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Patent Information

Authority / Receiving Office
CN · China
Patent Type
Patents(China)
Current Assignee / Owner
HUAZHONG UNIV OF SCI & TECH
Filing Date
2022-11-29
Publication Date
2026-06-26

AI Technical Summary

Technical Problem

In the fabrication of two-dimensional vertical pn junction diodes, the conventional evaporation electrode process leads to the destruction of the interface lattice, resulting in Fermi pinning and tunneling current, which in turn causes performance degradation, especially in nanoscale channels.

Method used

A metal top electrode, p-type two-dimensional material, and n-type two-dimensional material are vertically stacked from top to bottom. Contact is formed by van der Waals forces to avoid interface lattice damage. The electrode and two-dimensional material are bonded together using a fixed-point transfer method to ensure a smooth and defect-free interface.

Benefits of technology

This invention realizes a high-performance two-dimensional material vertical pn junction diode, avoiding Fermi pinning and tunneling current, ensuring good rectification performance and high rectification ratio, and is suitable for photodetectors, light-emitting diodes or rectifiers.

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Abstract

The application discloses a kind of based on van der waals contact vertical p-n junction diode and preparation method, semiconductor device.The two-dimensional material vertical p-n junction diode includes metal top electrode, p-type two-dimensional material, n-type two-dimensional material and bottom electrode from top to bottom vertically stacked, wherein, the material between adjacent two layers is formed by van der waals force van der waals contact, so that the material of adjacent two layers mutually adhere and do not fall off.Based on the interface of vertical p-n junction diode of van der waals contact is flat and has no defect and lattice damage, avoid the damage of traditional evaporation method to two-dimensional material lattice, make that the schottky barrier and tunneling current caused by fermi pinning in device significantly reduce, to greatly improve the rectification performance of the device.The application solves the technical problem that existing two-dimensional material vertical p-n junction device has schottky barrier and larger tunneling current.
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