Semiconductor equipment

Abstract

The present invention provides a semiconductor device that can suppress the occurrence of failures even if a surge voltage occurs. [Solution] The semiconductor device A1 includes a MOSFET 11 and an IGBT 12 connected in parallel, a power terminal 41 that conducts to the drain of the MOSFET 11 and the collector of the IGBT 12, a power terminal 43 that conducts to the source of the MOSFET 11 and the emitter of the IGBT 12, and a Schottky barrier diode 13 electrically connected in parallel to the MOSFET 11 and the IGBT 12. The element breakdown voltage of the MOSFET 11 is greater than that of the IGBT 12. The inductance of the first conduction path from the drain of the MOSFET 11 to the power terminal 41 is less than the inductance of the second conduction path from the collector of the IGBT 12 to the power terminal 41. The length of the third conduction path from the Schottky barrier diode 13 to the power terminal 41 is greater than the length of the first conduction path and less than the length of the second conduction path.

Description

Technical Field

[0001] The present disclosure relates to a semiconductor device.

Background Art

[0002] Conventionally, semiconductor devices including switching elements such as MOSFETs (Metal Oxide Semiconductor Field Effect Transistors) and IGBTs (Insulated Gate Bipolar Transistors) are known. For example, Patent Document 1 discloses a power module (semiconductor device) including a switching element of either a MOSFET or an IGBT. Such a power module is used, for example, in an inverter, and performs power conversion by the switching operation of the switching element.

Prior Art Documents

Patent Documents

[0003]

Patent Document 1

Summary of the Invention

Problems to be Solved by the Invention

[0004] In the above power module, a surge voltage may be generated during the switching operation of each switching element. If this surge voltage exceeds the rated voltage of the power module, the power module may fail, reducing the reliability of the power module. To suppress such a reduction in reliability, in addition to suppressing the generation of the surge voltage, it is also important to prevent the power module from failing even if a surge voltage is generated.

[0005] The present disclosure has been conceived in view of the above circumstances, and one object thereof is to provide a semiconductor device capable of suppressing the occurrence of a failure even if a surge voltage is generated. [Means for solving the problem]

[0006] The semiconductor device of this disclosure comprises a first MOSFET and a first IGBT, wherein the drain of the first MOSFET and the collector of the first IGBT are electrically connected, the source of the first MOSFET and the emitter of the first IGBT are electrically connected, and the element breakdown voltage of the first MOSFET is greater than the element breakdown voltage of the first IGBT. [Effects of the Invention]

[0007] According to the above configuration of this disclosure, it is possible to suppress the occurrence of failures in a semiconductor device and to suppress a decrease in the reliability of the semiconductor device. [Brief explanation of the drawing]

[0008] [Figure 1] Figure 1 is a perspective view showing a semiconductor device according to the first embodiment. [Figure 2] Figure 2 is a plan view showing a semiconductor device according to the first embodiment, in which the sealing member is indicated by dashed lines. [Figure 3] Figure 3 is a cross-sectional view taken along the line III-III in Figure 2. [Figure 4] Figure 4 is a cross-sectional view along the line IV-IV in Figure 2. [Figure 5] Figure 5 is a cross-sectional view along the VV line in Figure 2. [Figure 6] Figure 6 shows an example of the circuit configuration of a semiconductor device according to the first embodiment. [Figure 7] Figure 7 is a perspective view showing a semiconductor device according to the second embodiment. [Figure 8] Figure 8 is a perspective view of Figure 7, with some parts of the case (top panel) and resin components omitted. [Figure 9] Figure 9 is a plan view showing a semiconductor device according to the second embodiment, in which part of the case (top plate) and resin components are omitted. [Figure 10]FIG. 10 is a cross-sectional view taken along the line X-X of FIG. 9. [Figure 11] FIG. 11 is a cross-sectional view taken along the line XI-XI of FIG. 9. [Figure 12] FIG. 12 is a cross-sectional view taken along the line XII-XII of FIG. 9. [Figure 13] FIG. 13 is a cross-sectional view taken along the line XIII-XIII of FIG. 9. [Figure 14] FIG. 14 is a perspective view showing a semiconductor device according to the third embodiment. [Figure 15] FIG. 15 is a plan view showing a semiconductor device according to the third embodiment, in which a sealing member is indicated by an imaginary line. [Figure 16] FIG. 16 is a view obtained by omitting a main surface metal layer, a plurality of external terminals, a plurality of connection members, and a resin member from the plan view of FIG. 15. [Figure 17] FIG. 17 is a view obtained by omitting an insulating substrate from the plan view of FIG. 16. [Figure 18] FIG. 18 is a cross-sectional view taken along the line XVIII-XVIII of FIG. 15. [Figure 19] FIG. 19 is a cross-sectional view taken along the line XIX-XIX of FIG. 15. [Figure 20] FIG. 20 is a perspective view showing a semiconductor device according to the fourth embodiment. [Figure 21] FIG. 21 is a view obtained by omitting a sealing member from the perspective view of FIG. 20. [Figure 22] FIG. 22 is a plan view showing a semiconductor device according to the fourth embodiment, in which a sealing member is indicated by an imaginary line. [Figure 23] FIG. 23 is a cross-sectional view taken along the line XXIII-XXIII of FIG. 22. [Figure 24] FIG. 24 is a cross-sectional view taken along the line XXIV-XXIV of FIG. 22. [Figure 25] FIG. 25 is a plan view showing a semiconductor device according to a modified example, in which a sealing member is indicated by an imaginary line. [Figure 26] FIG. 26 is a plan view showing a semiconductor device according to a modified example, in which a sealing member is indicated by an imaginary line.

Best Mode for Carrying Out the Invention

[0009] Preferred embodiments of the semiconductor device of the present disclosure will be described below with reference to the drawings. Hereinafter, the same or similar components are denoted by the same reference numerals, and redundant descriptions are omitted. Terms such as "first", "second", "third", etc. in the present disclosure are merely used as labels and do not necessarily intend to assign an order to their objects.

[0010] In the present disclosure, "a certain object A is formed on a certain object B" and "a certain object A is formed on (the) certain object B" mean, unless otherwise specified, "a certain object A is directly formed on a certain object B", and "a certain object A is formed on a certain object B while interposing another object between the certain object A and the certain object B". Similarly, "a certain object A is arranged on a certain object B" and "a certain object A is arranged on (the) certain object B" mean, unless otherwise specified, "a certain object A is directly arranged on a certain object B", and "a certain object A is arranged on a certain object B while interposing another object between the certain object A and the certain object B". Similarly, "a certain object A is located on (the) certain object B" means, unless otherwise specified, "a certain object A is in contact with a certain object B and a certain object A is located on (the) certain object B", and "a certain object A is located on (the) certain object B while another object is interposed between the certain object A and the certain object B". Further, "a certain object A overlaps a certain object B when viewed in a certain direction" means, unless otherwise specified, "a certain object A overlaps all of a certain object B", and "a certain object A overlaps a part of a certain object B".

[0011] Figures 1 to 6 show a semiconductor device A1 according to the first embodiment. The semiconductor device A1 comprises two switching circuits 1 and 2, a support member 3, a plurality of external terminals, a plurality of connecting members, and a sealing member 6. The plurality of external terminals include a plurality of power terminals 41, 42, and 43, and a plurality of signal terminals 44A, 44B, 45A, 45B, and 49. The plurality of connecting members include a plurality of power connecting members 511 to 513 and 521 to 523, and a plurality of signal connecting members 541A, 541B, 542A, 542B, 551A, 551B, 552A, and 552B.

[0012] For the sake of explanation, let's call the three mutually orthogonal directions the first direction x, the second direction y, and the third direction z. The third direction z is the thickness direction of semiconductor device A1. The first direction x is the left-right direction in the plan view of semiconductor device A1 (see Figure 2). The second direction y is the up-down direction in the plan view of semiconductor device A1 (see Figure 2).

[0013] The two switching circuits 1 and 2 perform the electrical functions of the semiconductor device A1. Each of the two switching circuits 1 and 2 is controlled by a drive circuit installed outside the semiconductor device A1, and switches between a conduction state and an interrupted state. The switching between the conduction state and the interrupted state is called a switching operation. The two switching circuits 1 and 2 convert the input power supply voltage (DC voltage) into an AC voltage through their respective switching operations. Note that the power supply voltage may be an AC voltage instead of a DC voltage, and the converted voltage may be a DC voltage instead of an AC voltage. The main current in the semiconductor device A1 is generated by this power supply voltage and the converted voltage.

[0014] The switching circuit 1 includes a MOSFET 11 as a first MOSFET, an IGBT 12 as a first IGBT, and a Schottky barrier diode (hereinafter referred to as "SBD") 13 as a first Schottky barrier diode. The MOSFET 11 is composed of, for example, a first semiconductor material. The IGBT 12 is composed of, for example, a second semiconductor material. The SBD 13 is composed of, for example, a third semiconductor material. The first semiconductor material, the second semiconductor material, and the third semiconductor material are, for example, Si (silicon), SiC (silicon carbide), GaAs (gallium arsenide), GaN (gallium nitride), or Ga2O3 (gallium oxide). Preferably, the first semiconductor material and the third semiconductor material have a wider band gap than the second semiconductor material. In semiconductor device A1, for example, the MOSFET 11 and SBD 13 are each composed of SiC, and the IGBT 12 is composed of Si.

[0015] The MOSFET 11 has a main surface 11a and a back surface 11b. The main surface 11a and the back surface 11b are spaced apart in the thickness direction of the MOSFET 11. In the semiconductor device A1, the MOSFET 11 is arranged such that the thickness direction of the MOSFET 11 and the third direction z are in the same direction (or approximately the same direction). The MOSFET 11 has a vertical structure, with the drain 111 located on the back surface 11b and the source 112 and gate 113 located on the main surface 11a. The switching operation of the MOSFET 11 is controlled by a first drive signal (e.g., gate voltage) input to the gate 113. The MOSFET 11 is, for example, rectangular in shape when viewed in the third direction z (hereinafter also referred to as "plan view").

[0016] The IGBT12 has a main surface 12a and a back surface 12b. The main surface 12a and the back surface 12b are spaced apart in the thickness direction of the IGBT12. In semiconductor device A1, the IGBT12 is arranged such that the thickness direction of the IGBT12 coincides (or approximately coincides) with the third direction z. The IGBT12 has a vertical structure, with the collector 121 located on the back surface 12b and the emitter 122 and gate 123 located on the main surface 12a. The switching operation of the IGBT12 is controlled by a first drive signal (e.g., gate voltage) input to the gate 123. The IGBT12 is, for example, rectangular in plan view. In semiconductor device A1, a common first drive signal is input to the MOSFET11 and the IGBT12.

[0017] The SBD13 has a main surface 13a and a back surface 13b. The main surface 13a and the back surface 13b are spaced apart in the thickness direction of the SBD13. In the semiconductor device A1, the SBD13 is arranged such that the thickness direction of the SBD13 coincides (or approximately coincides) with the third direction z. The cathode 132 is located on the main surface 13a of the SBD13, and the anode 131 is located on the back surface 13b. The SBD13 is, for example, rectangular in plan view.

[0018] In switching circuit 1, the element breakdown voltage (drain breakdown voltage) of MOSFET 11 is greater than the element breakdown voltage (collector breakdown voltage) of IGBT 12. For example, in the case where the power supply voltage (DC voltage) is 400V or more and 500V or less, the element breakdown voltage of MOSFET 11 is 750V and the element breakdown voltage of IGBT 12 is 650V. In switching circuit 1, the planar area of ​​MOSFET 11 is smaller than the planar area of ​​IGBT 12, and the planar area of ​​SBD 13 is larger than the planar area of ​​MOSFET 11 and smaller than the planar area of ​​IGBT 12. The relationship between the planar areas of MOSFET 11, IGBT 12, and SBD 13 is not limited to the example above.

[0019] In the switching circuit 1, as will be described in detail later, the drain 111 of MOSFET 11, the collector 121 of IGBT 12, and the cathode 132 of SBD 13 are electrically connected, and the source 112 of MOSFET 11, the emitter 122 of IGBT 12, and the anode 131 of SBD 13 are electrically connected. As a result, MOSFET 11 and IGBT 12 are electrically connected in parallel, and SBD 13 is connected in antiparallel to them. When either MOSFET 11 or IGBT 12 is conducting, the switching circuit 1 is conducting, and when both MOSFET 11 and IGBT 12 are disconnected, the switching circuit 1 is disconnected. The switching operation of MOSFET 11 and IGBT 12 causes the switching circuit 1 to switch.

[0020] The switching circuit 2 includes a MOSFET 21 as a second MOSFET, an IGBT 22 as a second IGBT, and an SBD 23 as a second Schottky barrier diode. MOSFET 21, like MOSFET 11, is configured to include, for example, a first semiconductor material. IGBT 22, like IGBT 12, is configured to include, for example, a second semiconductor material. SBD 23, like SBD 13, is configured to include, for example, a third semiconductor material. In semiconductor device A1, for example, MOSFET 21 and SBD 23 are each configured to include SiC, and IGBT 22 is configured to include Si.

[0021] The MOSFET 21 has a main surface 21a and a back surface 21b. The main surface 21a and the back surface 21b are spaced apart in the thickness direction of the MOSFET 21. In semiconductor device A1, the MOSFET 21 is arranged such that the thickness direction of the MOSFET 21 and the third direction z are the same (or approximately the same) direction. The MOSFET 21 has a vertical structure, with the drain 211 located on the back surface 21b and the source 212 and gate 213 located on the main surface 21a. The switching operation of the MOSFET 21 is controlled by a second drive signal (e.g., gate voltage) input to the gate 213. The MOSFET 21 is, for example, rectangular in plan view.

[0022] The IGBT22 has a main surface 22a and a back surface 22b. The main surface 22a and the back surface 22b are spaced apart in the thickness direction of the IGBT22. In semiconductor device A1, the IGBT22 is arranged such that the thickness direction of the IGBT22 coincides (or approximately coincides) with the third direction z. The IGBT22 has a vertical structure, with the collector 221 located on the back surface 22b and the emitter 222 and gate 223 located on the main surface 22a. The switching operation of the IGBT22 is controlled by a second drive signal (e.g., gate voltage) input to the gate 223. The IGBT22 is, for example, rectangular in plan view. In semiconductor device A1, a common second drive signal is input to the MOSFET21 and the IGBT22.

[0023] The SBD23 has a main surface 23a and a back surface 23b. The main surface 23a and the back surface 23b are spaced apart in the thickness direction of the SBD23. In the semiconductor device A1, the SBD23 is arranged such that the thickness direction of the SBD23 coincides (or approximately coincides) with the third direction z. The cathode 232 is located on the main surface 23a of the SBD23, and the anode 231 is located on the back surface 23b. The SBD23 is, for example, rectangular in plan view.

[0024] In switching circuit 2, the element breakdown voltage (drain breakdown voltage) of MOSFET21 is greater than the element breakdown voltage (collector breakdown voltage) of IGBT22. For example, in the case where the power supply voltage (DC voltage) is 400V or more and 500V or less, the element breakdown voltage of MOSFET21 is 750V and the element breakdown voltage of IGBT22 is 650V. In switching circuit 2, the planar area of ​​MOSFET21 is smaller than the planar area of ​​IGBT22, and the planar area of ​​SBD23 is larger than the planar area of ​​MOSFET21 and smaller than the planar area of ​​IGBT22. The relationship between the planar areas of MOSFET21, IGBT22, and SBD23 is not limited to the example above.

[0025] In the switching circuit 2, as will be detailed later, the drain 211 of MOSFET 21, the collector 221 of IGBT 22, and the cathode 232 of SBD 23 are electrically connected, and the source 212 of MOSFET 21, the emitter 222 of IGBT 22, and the anode 231 of SBD 23 are electrically connected. As a result, MOSFET 21 and IGBT 22 are electrically connected in parallel, and SBD 23 is connected in antiparallel to them. When either MOSFET 21 or IGBT 22 is conducting, the switching circuit 2 is conducting, and when both MOSFET 21 and IGBT 22 are closed, the switching circuit 2 is closed. The switching operation of MOSFET 21 and IGBT 22 causes the switching circuit 2 to switch.

[0026] As shown in Figure 6, the semiconductor device A1 is configured, for example, as a half-bridge circuit. Switching circuit 1 and switching circuit 2 are connected in series. Specifically, the source 112 of MOSFET 11, the emitter 122 of IGBT 12, and the anode 131 of SBD 13 are electrically connected to the drain 211 of MOSFET 21, the collector 221 of IGBT 22, and the cathode 232 of SBD 23. Switching circuit 1 constitutes the upper arm circuit of semiconductor device A1, and switching circuit 2 constitutes the lower arm circuit of semiconductor device A1.

[0027] The support member 3 supports the two switching circuits 1 and 2 respectively, and also forms a conductive path between the two switching circuits 1 and 2 and a plurality of power terminals 41 to 43 and a plurality of signal terminals 44A, 44B, 45A, 45B, and 49. The support member 3 includes an insulating substrate 31, a main surface metal layer 32, and a back surface metal layer 33.

[0028] The insulating substrate 31 is made of, for example, a ceramic with excellent thermal conductivity. Examples of such ceramics include AlN (aluminum nitride), SiN (silicon nitride), and Al2O3 (aluminum oxide). The insulating substrate 31 is, for example, in the shape of a flat plate.

[0029] The insulating substrate 31 has a main surface 31a and a back surface 31b. The main surface 31a and the back surface 31b are separated in the third direction z. As shown in Figure 3, the main surface 31a faces one direction (upwards) in the third direction z, and the back surface 31b faces the other direction (downwards) in the third direction z.

[0030] The main surface metal layer 32 is formed on the main surface 31a of the insulating substrate 31. The constituent material of the main surface metal layer 32 is, for example, copper or a copper alloy. The constituent material may be aluminum or an aluminum alloy, rather than copper or a copper alloy. The main surface metal layer 32 is covered by a sealing member 6. The main surface metal layer 32 includes a power wiring section 321 as a first conductor, a power wiring section 322 as a third conductor, a power wiring section 323 as a second conductor, and a plurality of signal wiring sections 324A, 324B, 325A, 325B, 329. The plurality of power wiring sections 321, 322, 323 and the plurality of signal wiring sections 324A, 324B, 325A, 325B, 329 are arranged apart from each other.

[0031] The power wiring section 321 includes two pad sections 321a and 321b. The two pad sections 321a and 321b are integrally formed with each other.

[0032] The pad portion 321a is equipped with a MOSFET 11, an IGBT 12, and an SBD 13. In the examples shown in Figures 2 and 3, the MOSFET 11, SBD 13, and IGBT 12 are arranged in this order along the first direction x on the pad portion 321a. That is, the arrangement direction of the MOSFET 11, IGBT 12, and SBD 13 (hereinafter referred to as the "first arrangement direction") coincides with (or approximately coincides with) the first direction x. Also, in the examples shown in Figures 2 and 3, the MOSFET 11 is located on one side of the first direction x (the side where the power terminals 41 and 42 are located) than the IGBT 12. The drain 111 of the MOSFET 11, the collector 121 of the IGBT 12, and the cathode 132 of the SBD 13 are electrically connected to the pad portion 321a by a conductive bonding material (for example, solder, metal paste, or sintered metal). In this configuration, the drain 111 of the MOSFET 11, the collector 121 of the IGBT 12, and the cathode 132 of the SBD 13 are electrically connected. The pad portion 321a is rectangular in shape, for example, with the first direction x as the longitudinal direction in a plan view.

[0033] The pad portion 321b has the power terminal 41 attached to it. The pad portion 321b is, for example, a strip extending in the second direction y in a plan view. The pad portion 321a extends from the pad portion 321b along the first direction x.

[0034] The power wiring section 322 includes two pad sections 322a and 322b. The two pad sections 322a and 322b are integrally formed with each other.

[0035] The pad portion 322a is joined to a plurality of power connection members 521, 522, and 523. The pad portion 322a is electrically connected to the source 212 of the MOSFET 21, the emitter 222 of the IGBT 22, and the anode 231 of the SBD 23 via these power connection members 521, 522, and 523. The pad portion 322a is rectangular in shape, for example, with the first direction x as the longitudinal direction in a plan view.

[0036] The pad portion 322b has the power terminals 42 attached to it. The pad portion 322b is, for example, a strip extending in the second direction y in a plan view. The pad portion 322a extends from the pad portion 322b along the first direction x.

[0037] The power wiring section 323 includes two pad sections 323a and 323b. The two pad sections 323a and 323b are integrally formed with each other.

[0038] The pad portion 323a is equipped with a MOSFET 21, an IGBT 22, and an SBD 23. In the examples shown in Figures 2 and 4, the MOSFET 21, SBD 23, and IGBT 22 are arranged in this order along the first direction x on the pad portion 323a. That is, the arrangement direction of the MOSFET 21, IGBT 22, and SBD 23 (hereinafter referred to as the "second arrangement direction") coincides with (or nearly coincides with) the first direction x and the first arrangement direction, respectively. Also, in the examples shown in Figures 2 and 4, the MOSFET 21 is located on one side of the first direction x (the side where the power terminals 41 and 42 are located) than the IGBT 22. The drain 211 of the MOSFET 21, the collector 221 of the IGBT 22, and the cathode 232 of the SBD 23 are electrically connected to the pad portion 323a by a conductive bonding material (for example, solder, metal paste, or sintered metal). In this configuration, the drain 211 of MOSFET 21, the collector 221 of IGBT 22, and the cathode 232 of SBD 23 are electrically connected. In addition, multiple power connection members 511, 512, and 513 are joined to the pad portion 323a. The pad portion 323a conducts to the source 112 of MOSFET 11, the emitter 122 of IGBT 12, and the anode 131 of SBD 13 via these power connection members 511, 512, and 513. The pad portion 323a is rectangular in shape, for example, with the first direction x as the longitudinal direction in a plan view.

[0039] The pad portion 323b has the power terminals 43 attached to it. The pad portion 323b is, for example, a strip extending in the second direction y in a plan view. The pad portion 323a extends from the pad portion 323b along the first direction x.

[0040] In semiconductor device A1, the three pad portions 321a, 322a, and 323a are arranged in the second direction y in a plan view and are parallel (or approximately parallel) to each other. Pad portion 323a is located between pad portion 321a and pad portion 322a in the second direction y.

[0041] The signal wiring section 324A is connected to two signal connection members 541A and 542A, respectively. The signal wiring section 324A conducts to the gate 113 of the MOSFET 11 via the signal connection member 541A. The signal wiring section 324A also conducts to the gate 123 of the IGBT 12 via the signal connection member 542A. The signal wiring section 324A transmits a first drive signal that controls the switching operation of the switching circuit 1 (the switching operation of the MOSFET 11 and the switching operation of the IGBT 12).

[0042] The signal wiring section 324B is connected to two signal connection members 541B and 542B, respectively. The signal wiring section 324B conducts to the gate 213 of the MOSFET 21 via the signal connection member 541B. The signal wiring section 324B also conducts to the gate 223 of the IGBT 22 via the signal connection member 542B. The signal wiring section 324B transmits a second drive signal that controls the switching operation of the switching circuit 2 (the switching operation of the MOSFET 21 and the switching operation of the IGBT 22).

[0043] The signal wiring section 325A is connected to two signal connection members 551A and 552A, respectively. The signal wiring section 325A conducts to the source 112 of the MOSFET 11 via the signal connection member 551A. The signal wiring section 325A also conducts to the emitter 122 of the IGBT 12 via the signal connection member 552A. The signal wiring section 325A transmits a first detection signal indicating the conduction state of the switching circuit 1. The voltages of the source 112 of the MOSFET 11 and the emitter 122 of the IGBT 12 are applied to the signal wiring section 325A.

[0044] The signal wiring section 325B is connected to two signal connection members 551B and 552B, respectively. The signal wiring section 325B conducts to the source 212 of the MOSFET 21 via the signal connection member 551B. The signal wiring section 325B also conducts to the emitter 222 of the IGBT 22 via the signal connection member 552B. The signal wiring section 325B transmits a second detection signal indicating the conduction state of the switching circuit 2. The voltages of the source 212 of the MOSFET 21 and the emitter 222 of the IGBT 22 are applied to the signal wiring section 325B.

[0045] The multiple signal wiring sections 329 are not conducting to either of the two switching circuits 1 and 2 (two MOSFETs 11 and 21, two IGBTs 12 and 22, and two SBDs 13 and 23). In other words, no main current or electrical signal flows through any of the multiple signal wiring sections 329.

[0046] The back metal layer 33 is formed on the back surface 31b of the insulating substrate 31. The constituent material of the back metal layer 33 is the same as the constituent material of the main surface metal layer 32. The back metal layer 33 has a surface facing downward in the third direction z that is exposed from the sealing member 6. However, the surface of the back metal layer 33 facing downward in the third direction z may be covered by the sealing member 6. Furthermore, the support member 3 does not have to include the back metal layer 33. In this case, the back surface 31b of the insulating substrate 31 may be covered by the sealing member 6 or may be exposed from the sealing member 6.

[0047] The multiple external terminals include a power terminal 41 as a first power terminal, a power terminal 42 as a third power terminal, a power terminal 43 as a second power terminal, and multiple signal terminals 44A, 44B, 45A, 45B, 49. Parts of each of the multiple power terminals 41-43 and the multiple signal terminals 44A, 44B, 45A, 45B, 49 are exposed from the sealing member 6. Each of the multiple power terminals 41-43 and the multiple signal terminals 44A, 44B, 45A, 45B, 49 are bonded to the main surface metal layer 32 inside the sealing member 6. The multiple power terminals 41-43 and the multiple signal terminals 44A, 44B, 45A, 45B, 49 are formed from, for example, the same lead frame, and each is formed from a metal plate. The constituent materials of the multiple power terminals 41-43 and the multiple signal terminals 44A, 44B, 45A, 45B, 49 are, for example, copper or a copper alloy.

[0048] The power terminal 41 is conductive to the drain 111 of the MOSFET 11, the collector 121 of the IGBT 12, and the cathode 132 of the SBD 13. The power terminal 41 includes a junction 411 and a terminal portion 412.

[0049] The joint portion 411 is covered by a sealing member 6, as shown in Figures 2 and 3. The joint portion 411 is joined to the pad portion 321b of the power wiring portion 321, as shown in Figures 2 and 3. This allows electrical conductivity between the power terminal 41 and the power wiring portion 321. The joining of the joint portion 411 and the pad portion 321b may be done by any method such as joining using a conductive joining material (solder, sintered metal, etc.), laser joining, or ultrasonic joining.

[0050] As shown in Figures 2 and 3, the terminal portion 412 is exposed from the sealing member 6. As shown in Figure 2, in a plan view, the terminal portion 412 extends from the sealing member 6 to one side in the first direction x. The surface of the terminal portion 412 may be, for example, silver plated.

[0051] The power terminal 42 conducts to the source 212 of the MOSFET 21, the emitter 222 of the IGBT 22, and the anode 231 of the SBD 23. The power terminal 42 includes a junction 421 and a terminal portion 422.

[0052] The joint portion 421 is covered by a sealing member 6, as shown in Figures 2 and 4. The joint portion 421 is joined to the pad portion 322b of the power wiring portion 322, as shown in Figures 2 and 4. This allows electrical conductivity between the power terminal 42 and the power wiring portion 322. The joining of the joint portion 421 and the pad portion 322b may be done by any method such as joining using a conductive joining material (solder, sintered metal, etc.), laser joining, or ultrasonic joining.

[0053] As shown in Figures 2 and 4, the terminal portion 422 is exposed from the sealing member 6. As shown in Figure 2, in a plan view, the terminal portion 422 extends from the sealing member 6 to one side in the first direction x. The surface of the terminal portion 422 may be, for example, silver plated.

[0054] The power terminal 43 conducts to the source 112 of MOSFET 11, the emitter 122 of IGBT 12, and the anode 131 of SBD 13, while also conducting to the drain 211 of MOSFET 21, the collector 221 of IGBT 22, and the cathode 232 of SBD 23. The power terminal 43 includes a junction 431 and a terminal portion 432.

[0055] The joint portion 431 is covered by a sealing member 6, as shown in Figures 2 and 4. The joint portion 431 is joined to the pad portion 323b of the power wiring portion 323, as shown in Figures 2 and 4. This allows electrical conductivity between the power terminal 43 and the power wiring portion 323. The joining of the joint portion 431 and the pad portion 323b may be done by any method such as joining using a conductive joining material (solder, sintered metal, etc.), laser joining, or ultrasonic joining.

[0056] As shown in Figures 2 and 4, the terminal portion 432 is exposed from the sealing member 6. As shown in Figure 2, in a plan view, the terminal portion 432 extends from the sealing member 6 to the other side in the first direction x. The surface of the terminal portion 432 may be, for example, silver plated.

[0057] In semiconductor device A1, power terminals 41 and 42 are connected to a power supply and the power supply voltage (e.g., DC voltage) is applied to them. For example, power terminal 41 is the positive terminal (P terminal) and power terminal 42 is the negative terminal (N terminal). Power terminals 41 and 42 are spaced apart from each other and arranged along the second direction y. Power terminal 43 outputs a voltage (e.g., AC voltage) converted by the switching operations of switching circuit 1 and switching circuit 2. Power terminal 43 is, for example, a power output terminal (OUT terminal).

[0058] In semiconductor device A1, power terminals 41 and 42 are located on one side of the support member 3 in the first direction x, and power terminal 43 is located on the other side of the support member 3 in the first direction x. In semiconductor device A1, power terminals 41 and 42 are located on the opposite side of each IGBT 12 and 22 from each MOSFET 11 and 21 in the first direction x.

[0059] As shown in Figure 2, signal terminal 44A is connected to signal wiring section 324A. Signal terminal 44A conducts to gate 113 of MOSFET 11 and gate 123 of IGBT 12 via signal wiring section 324A and signal connection members 541A and 542A. Signal terminal 44A is the input terminal for the first drive signal and is connected to, for example, an external drive circuit.

[0060] As shown in Figure 2, signal terminal 44B is connected to signal wiring section 324B. Signal terminal 44B conducts to gate 213 of MOSFET 21 and gate 223 of IGBT 22 via signal wiring section 324B and signal connection members 541B and 542B. Signal terminal 44B is an input terminal for the second drive signal and is connected to, for example, an external drive circuit.

[0061] As shown in Figure 2, signal terminal 45A is connected to signal wiring section 325A. Signal terminal 45A conducts to the source 112 of MOSFET 11 and the emitter 122 of IGBT 12 via signal wiring section 325A and signal connection members 551A and 552A. Signal terminal 45A is the output terminal for the first detection signal and is connected to, for example, an external drive circuit.

[0062] As shown in Figure 2, signal terminal 45B is connected to signal wiring section 325B. Signal terminal 45B conducts to the source 212 of MOSFET 21 and the emitter 222 of IGBT 22 via signal wiring section 325B and signal connection members 551B and 552B. Signal terminal 45B is the output terminal for the second detection signal and is connected to, for example, an external drive circuit.

[0063] Each of the multiple signal terminals 49 is connected to each of the multiple signal wiring sections 329, as shown in Figure 2. None of the multiple signal terminals 49 are conductive to either of the two switching circuits 1 and 2. Each of the multiple signal terminals 49 is a non-connected terminal.

[0064] Each of the multiple connecting members provides electrical conductivity between two parts that are spaced apart from each other. The multiple connecting members include a power connecting member 511 as a first connecting member, power connecting members 512 and 513 as second connecting members, a power connecting member 521 as a third connecting member, power connecting members 522 and 523 as fourth connecting members, and multiple signal connecting members 541A, 541B, 542A, 542B, 551A, 551B, 552A, and 552B.

[0065] Each of the power connection members 511-513 and 521-523 is a main current conductor. Each of the power connection members 511-513 and 521-523 is formed from, for example, a metal plate. Each of the power connection members 511-513 and 521-523 may be made of one or more bonding wires instead of a metal plate. The constituent material of each of the power connection members 511-513 and 521-523 is, for example, copper or a copper alloy. The constituent material may be gold or a gold alloy, or aluminum or an aluminum alloy, instead of copper or a copper alloy. Each of the power connection members 513 and 523 is partially bent, as shown in Figure 5. Each of the power connection members 511, 512, 521, and 522 is also partially bent, similar to each of the power connection members 513 and 523.

[0066] The power connection member 511 is connected to the source 112 of the MOSFET 11 and the pad portion 323a, making the source 112 electrically connected to the power wiring portion 323. The power connection member 512 is connected to the emitter 122 of the IGBT 12 and the pad portion 323a, making the emitter 122 electrically connected to the power wiring portion 323. The power connection member 513 is connected to the anode 131 of the SBD 13 and the pad portion 323a, making the anode 131 electrically connected to the power wiring portion 323. With this configuration, the source 112 of the MOSFET 11, the emitter 122 of the IGBT 12, and the anode 131 of the SBD 13 are electrically connected.

[0067] The power connection member 521 is connected to the source 212 and pad portion 322a of the MOSFET 21, making the source 212 and the power wiring portion 322 electrically connected. The power connection member 522 is connected to the emitter 222 and pad portion 322a of the IGBT 22, making the emitter 222 and the power wiring portion 322 electrically connected. The power connection member 523 is connected to the anode 231 and pad portion 322a of the SBD 23, making the anode 231 and the power wiring portion 322 electrically connected. With this configuration, the source 212 of the MOSFET 21, the emitter 222 of the IGBT 22, and the anode 231 of the SBD 23 are electrically connected.

[0068] Each of the signaling connectors 541A, 541B, 542A, 542B, 551A, 551B, 552A, and 552B is an electrical signal conductor. Each of the signaling connectors 541A, 541B, 542A, 542B, 551A, 551B, 552A, and 552B is, for example, a bonding wire. The constituent material of each of the signaling connectors 541A, 541B, 542A, 542B, 551A, 551B, 552A, and 552B is, for example, gold or a gold alloy. The constituent material may not be gold or a gold alloy, but copper or a copper alloy, or aluminum or an aluminum alloy.

[0069] The signal connection member 541A is connected to the gate 113 of the MOSFET 11 and the signal wiring section 324A, causing the gate 113 and the signal wiring section 324A to be electrically connected. The signal connection member 542A is connected to the gate 123 of the IGBT 12 and the signal wiring section 324A, causing the gate 123 and the signal wiring section 324A to be electrically connected.

[0070] The signal connection member 541B is connected to the gate 213 of the MOSFET 21 and the signal wiring section 324B, causing the gate 213 and the signal wiring section 324B to be electrically connected. The signal connection member 542B is connected to the gate 223 of the IGBT 22 and the signal wiring section 324B, causing the gate 223 and the signal wiring section 324B to be electrically connected.

[0071] The signal connection member 551A is connected to the source 112 of the MOSFET 11 and the signal wiring section 325A, causing the source 112 and the signal wiring section 325A to conduct electricity. The signal connection member 552A is connected to the emitter 122 of the IGBT 12 and the signal wiring section 325A, causing the emitter 122 and the signal wiring section 325A to conduct electricity.

[0072] The signal connection member 551B is connected to the source 212 of the MOSFET 21 and the signal wiring section 325B, causing the source 212 and the signal wiring section 325B to conduct electricity. The signal connection member 552B is connected to the emitter 222 of the IGBT 22 and the signal wiring section 325B, causing the emitter 222 and the signal wiring section 325B to conduct electricity.

[0073] The sealing member 6 is a sealing material that protects the two switching circuits 1 and 2, etc. The sealing member 6 covers the two switching circuits 1 and 2, a part of the support member 3, a part of each of the multiple power terminals 41, 42, and 43, a part of each of the multiple signal terminals 44A, 44B, 45A, 45B, and 49, power connection members 511 to 513, 521 to 523, and multiple signal connection members 541A, 541B, 542A, 542B, 551A, 551B, 552A, and 552B, respectively. The sealing member 6 is made of, for example, an insulating resin material. This insulating resin material is, for example, epoxy resin. The sealing member 6 has a resin main surface 61, a resin back surface 62, and a plurality of resin side surfaces 631 to 634.

[0074] The resin main surface 61 and resin back surface 62 are spaced apart in the third direction z, as shown in Figures 3-5. The resin main surface 61 faces one direction (upwards) in the third direction z, and the resin back surface 62 faces the other direction (downwards) in the third direction z. Multiple resin sides 631-634 are each sandwiched between the resin main surface 61 and resin back surface 62 in the third direction z, and connected to them. Two resin sides 631 and 632 face opposite each other in the first direction x. Each power terminal 41 and 42 protrudes from the resin side surface 632, and power terminal 43 protrudes from the resin side surface 631. Two resin sides 633 and 634 face opposite each other in the second direction y. Each signal terminal 44A and 45A protrudes from the resin side surface 634, and signal terminals 44B and 45B protrude from the resin side surface 633.

[0075] The operation and effects of semiconductor device A1 are as follows:

[0076] In semiconductor device A1, the element breakdown voltage of MOSFET11 is greater than that of IGBT12. With this configuration, when a surge voltage is generated during the switching operation of switching circuit 1, the surge voltage exceeds the element breakdown voltage of IGBT12 before that of MOSFET11. Therefore, IGBT12 enters avalanche mode before MOSFET11. Avalanche mode is a state in which avalanche breakdown occurs. According to the inventor's research, due to the difference in avalanche withstand capability between MOSFET11 and IGBT12, IGBT12 is less likely to be damaged even when it enters avalanche mode, while MOSFET11 is more likely to be damaged when it enters avalanche mode. Therefore, even if a surge voltage is generated by the switching operation of switching circuit 1, IGBT12 enters avalanche mode first, allowing the surge voltage to be absorbed by IGBT12 and suppressing MOSFET11 from entering avalanche mode. Therefore, even when a switching surge occurs in the switching circuit 1, the semiconductor device A1 is configured to cause avalanche breakdown of the IGBT 12 before the MOSFET 11, thereby suppressing the destruction of both the MOSFET 11 and the IGBT 12. In other words, the semiconductor device A1 can suppress the occurrence of failures due to surge voltage when the MOSFET 11 and IGBT 12 are operating in parallel, thereby suppressing a decrease in reliability.

[0077] For example, in semiconductor device A1, if the power supply voltage applied to the two power terminals 41 and 42 is between 400V and 500V, a surge voltage of approximately 650V may be generated by the switching operation of the switching circuit 1. In such a case, the element breakdown voltage of MOSFET 11 and IGBT 12 are designed to match this surge voltage, approximately 650V. However, in semiconductor device A1, the element breakdown voltage of MOSFET 11 is set to 750V, and the element breakdown voltage of IGBT 12 is set to 650V. As a result, even if IGBT 12 enters avalanche mode, MOSFET 11 does not. In other words, even if a surge voltage occurs in semiconductor device A1 due to the switching operation of the switching circuit 1, IGBT 12 enters avalanche mode before MOSFET 11, suppressing the destruction of both MOSFET 11 and IGBT 12.

[0078] In semiconductor device A1, the MOSFET 11 is constructed with SiC, and the IGBT 12 is constructed with Si. Generally, the MOSFET 11, constructed with SiC, tends to have a lower avalanche withstand voltage than the IGBT 12, constructed with Si. Therefore, maintaining the above-mentioned relationship between the device breakdown voltage of the MOSFET 11 and the device breakdown voltage of the IGBT 12 is effective in suppressing the breakdown of both the MOSFET 11 and the IGBT 12.

[0079] In semiconductor device A1, the inductance of the first conduction path from the power terminal 41 to the drain 111 of MOSFET 11 is smaller than the inductance of the second conduction path from the power terminal 41 to the collector 121 of IGBT 12. For example, in semiconductor device A1, as can be seen from Figure 2, the length of the first conduction path is shorter than the length of the second conduction path, making the inductance of the first conduction path smaller than that of the second conduction path. With this configuration, since the inductance of the second conduction path is larger than that of the first conduction path, a larger switching surge occurs in IGBT 12 than in MOSFET 11. Therefore, even if a surge voltage is generated due to the switching operation of switching circuit 1, IGBT 12 enters avalanche mode before MOSFET 11, regardless of the relationship between the element breakdown voltage of MOSFET 11 and IGBT 12. Therefore, the surge voltage can be absorbed by IGBT 12, suppressing MOSFET 11 from entering avalanche mode, thus suppressing the destruction of MOSFET 11 and IGBT 12. In other words, semiconductor device A1 can suppress the occurrence of failures due to surge voltage when operating MOSFET11 and IGBT12 in parallel, thereby suppressing a decrease in reliability.

[0080] In semiconductor device A1, the MOSFET 11 and IGBT 12 are mounted on pad portion 321a, and in a plan view, pad portion 321a extends along a first alignment direction (for example, a first direction x) between the MOSFET 11 and IGBT 12. Pad portion 321a is connected to pad portion 321b to which the power terminal 41 is joined, and pad portion 321b is connected to the edge of pad portion 321a that is closer to the MOSFET 11 than to the IGBT 12 in the first alignment direction. With this configuration, it is possible to make the length of the first conduction path shorter than the length of the second conduction path.

[0081] The semiconductor device A1 is equipped with an SBD13. The SBD13 is connected in antiparallel to the MOSFET11 and IGBT12. With this configuration, even if a switching surge occurs due to the switching operation of the switching circuit 1, the current flowing through the built-in diodes of the MOSFET11 and IGBT12 is reduced by energizing the SBD13. Therefore, the switching surge applied to the MOSFET11 and IGBT12 is suppressed in semiconductor device A1, and the destruction of the MOSFET11 and IGBT12 can be suppressed. In other words, even if a switching surge occurs during the switching operation of the MOSFET11 and IGBT12, the semiconductor device A1 can suppress the occurrence of failure due to this switching surge, thus suppressing a decrease in reliability. In particular, in semiconductor device A1, the length of the third conduction path from the power terminal 41 to the SBD13 is greater than the length of the first conduction path from the power terminal 41 to the MOSFET11, and less than the length of the second conduction path from the power terminal 41 to the IGBT12. Such a configuration is effective in suppressing the switching surge applied to the MOSFET11 and IGBT12. For example, in semiconductor device A1, when the power terminal 41 is located on one side of the switching circuit 1 in the first array direction, an SBD 13 is placed between the MOSFET 11 and the IGBT 12. This makes the length of the third conduction path greater than the length of the first conduction path and less than the length of the second conduction path.

[0082] In semiconductor device A1, the element withstand voltage of MOSFET21 is greater than that of IGBT22. With this configuration, even if a surge voltage is generated by the switching operation of switching circuit 2, just as in switching circuit 1, the IGBT22 will enter avalanche mode before MOSFET21, thereby suppressing the destruction of MOSFET21 and IGBT22. In other words, semiconductor device A1 can suppress the occurrence of failures due to surge voltage when MOSFET21 and IGBT22 are operating in parallel, thus suppressing a decrease in reliability. Furthermore, in switching circuit 2, just as in switching circuit 1, when the power supply voltage applied to the two power terminals 41 and 42 is between 400V and 500V, the element withstand voltage of MOSFET21 is set to 750V and the element withstand voltage of IGBT22 is set to 650V. As a result, even if a surge voltage is generated in semiconductor device A1 due to the switching operation of switching circuit 2, the IGBT22 will enter avalanche mode before MOSFET21, thereby suppressing the destruction of MOSFET21 and IGBT22.

[0083] In semiconductor device A1, the inductance of the fourth conduction path from the power terminal 41 to the drain 211 of MOSFET 21 is smaller than the inductance of the fifth conduction path from the power terminal 41 to the collector 221 of IGBT 22. For example, in semiconductor device A1, as can be seen from Figure 2, the length of the fourth conduction path is shorter than the length of the fifth conduction path, thereby making the inductance of the fourth conduction path smaller than that of the fifth conduction path. With this configuration, even if a surge voltage is generated in switching circuit 2 due to the switching operation of switching circuit 2, similar to switching circuit 1, the IGBT 22 enters avalanche mode before MOSFET 21, thereby suppressing the destruction of MOSFET 21 and IGBT 22. In other words, semiconductor device A1 can suppress the occurrence of failures due to surge voltage when MOSFET 21 and IGBT 22 are operating in parallel, thus suppressing a decrease in reliability.

[0084] The semiconductor device A1 is equipped with an SBD23. The SBD23 is connected in antiparallel to the MOSFET21 and IGBT22. With this configuration, even if a switching surge occurs in the switching circuit 2 due to the switching operation of the switching circuit 2, the SBD23 will conduct electricity, suppressing the switching surge applied to the MOSFET21 and IGBT22, thereby preventing damage to the MOSFET21 and IGBT22. In other words, even if a switching surge occurs during the switching operation of the MOSFET21 and IGBT22, the semiconductor device A1 can suppress the occurrence of failures due to this switching surge, thus suppressing a decrease in reliability. In particular, in the semiconductor device A1, the length of the sixth conduction path from the power terminal 41 to the SBD23 is greater than the length of the fourth conduction path from the power terminal 41 to the MOSFET21, and less than the length of the fifth conduction path from the power terminal 41 to the IGBT22. Such a configuration is effective in suppressing the switching surge applied to the MOSFET21 and IGBT22. For example, in semiconductor device A1, when the power terminal 41 is located on one side of the switching circuit 1 in the second array direction, an SBD 23 is placed between the MOSFET 21 and the IGBT 22. This makes the length of the sixth conduction path greater than the length of the fourth conduction path and less than the length of the fifth conduction path.

[0085] In semiconductor device A1, power terminals 41 and 42 are located on the opposite side of IGBT12 from MOSFET11 in the first alignment direction of MOSFET11 and IGBT12. Also, in the second alignment direction of MOSFET21 and IGBT22, power terminals 41 and 42 are located on the opposite side of IGBT22 from MOSFET21. With this configuration, the main current conduction path between power terminals 41 and 42 is shorter through the two MOSFETs 11 and 21 than through the two IGBTs 12 and 22. In the low current range (for example, around 100A), the current flowing through semiconductor device A1 preferentially flows through the path of the two MOSFETs 11 and 21, which has a relatively shorter conduction path. Generally, MOSFETs have lower on-resistance than IGBTs in the low current range. Therefore, in semiconductor device A1, current preferentially flows to each MOSFET 11 and 21 over each IGBT 12 and 22 in the low current range, thereby suppressing power loss due to on-resistance. For example, when semiconductor device A1 is used in an automotive inverter, it operates frequently under light load (low current range). Therefore, when semiconductor device A1 is used in an automotive inverter, it is effective in suppressing power loss due to the on-resistance of each MOSFET 11 and 21 and each IGBT 12 and 22.

[0086] In the first embodiment, the inductance of the first conduction path was made smaller than the inductance of the second conduction path by the difference in length between the first conduction path from the power terminal 41 to the drain 111 of the MOSFET 11 and the second conduction path from the power terminal 41 to the collector 121 of the IGBT 12. However, in a different configuration, the inductance of the first conduction path may be made smaller than the inductance of the second conduction path by the difference in the constituent materials or shapes of the first and second conduction paths.

[0087] Figures 7 to 13 show a semiconductor device A2 according to a second embodiment. As shown in Figures 7 to 13, the semiconductor device A2 comprises two switching circuits 1 and 2, a support member 3, a plurality of external terminals, a plurality of connecting members, a heat sink 70, a case 71, and a resin member 75. The plurality of external terminals include a plurality of power terminals 41 to 43 and a plurality of signal terminals 44A, 44B, 45A, 45B, 46, and 47. The plurality of connecting members include a plurality of power connecting members 511 to 513, 521 to 523, and a plurality of signal connecting members 541A, 541B, 542A, 542B, 551A, 551B, 552A, 552B, 540A, 540B, 550A, 550B, 56, and 57.

[0088] Semiconductor device A2 has a different module structure compared to semiconductor device A1. For example, semiconductor device A2 differs from semiconductor device A1 in that it has a heat sink 70, a case 71, and a resin member 75 instead of a sealing member 6. The heat sink 70, case 71, and resin member 75 protect two switching circuits 1 and 2, etc.

[0089] The heat sink 70 is, for example, a rectangular flat plate in plan view. The heat sink 70 is made of a material with high thermal conductivity, such as copper or a copper alloy. The surface of the heat sink 70 may be nickel-plated. A cooling member (e.g., a heat sink) is attached to the surface of the heat sink 70 on the third direction z-down side, if necessary. As shown in Figures 10 and 11, the insulating substrate 31 is placed on the heat sink 70.

[0090] Case 71 is, for example, a rectangular parallelepiped, as can be seen from Figures 8 and 9. Case 71 is made of a synthetic resin that has electrical insulating properties and excellent heat resistance, for example, PPS (polyphenylene sulfide). Case 71 is rectangular in shape, approximately the same size as the heat sink 70 in plan view. Case 71 includes a frame 72, a top plate 73, and a number of terminal blocks 741 to 744, as shown in Figures 7 to 13.

[0091] The frame portion 72 is fixed to the surface of the heat sink 70 in the third direction z upward. The top plate 73 is fixed to the frame portion 72. As shown in Figures 7, 10, and 11, the top plate 73 closes the opening on the third direction z upward side of the frame portion 72. As shown in Figures 10 and 11, the top plate 73 faces the heat sink 70 which closes the third direction z downward side of the frame portion 72. The top plate 73, the heat sink 70, and the frame portion 72 partition the circuit housing space (a space for housing switching circuit 1 and switching circuit 2, etc.) inside the case 71.

[0092] The two terminal blocks 741 and 742 are positioned on one side of the frame 72 in the first direction x and are integrally formed with the frame 72. The two terminal blocks 743 and 744 are positioned on the other side of the frame 72 in the first direction x and are integrally formed with the frame 72. The two terminal blocks 741 and 742 are positioned along the second direction y with respect to one side wall of the frame 72 in the first direction x. As shown in Figures 10 and 12, terminal block 741 covers a portion of the power terminal 41, and a portion of the power terminal 41 is positioned on the upper surface in the third direction z. As shown in Figures 11 and 12, terminal block 742 covers a portion of the power terminal 42, and a portion of the power terminal 42 is positioned on the upper surface in the third direction z. The two terminal blocks 743 and 744 are positioned along the second direction y with respect to the other side wall of the frame 72 in the first direction x. As shown in Figures 10 and 13, terminal block 743 covers a portion of one of the two power terminals 43, and the portion of this power terminal 43 is positioned on the surface facing upward in the third direction z. As shown in Figures 11 and 13, terminal block 744 covers a portion of the other of the two power terminals 43, and the portion of this power terminal 43 is positioned on the surface facing upward in the third direction z.

[0093] As shown in Figures 10 and 11, the resin member 75 fills the area enclosed by the heat sink 70 and the case 71. The resin member 75 covers the two switching circuits 1 and 2, etc. The constituent material of the resin member 75 is, for example, black epoxy resin. Other materials such as silicone gel may be selected as the constituent material of the resin member 75 instead of epoxy resin. Note that the semiconductor device A2 does not necessarily have to include the resin member 75. Also, in the example where the semiconductor device A2 includes the resin member 75, the case 71 does not necessarily have to include the top plate 73.

[0094] The switching circuit 1 of semiconductor device A2 comprises two MOSFETs 11, two IGBTs 12, and two SBDs 13. These are arranged in the order of two MOSFETs 11, two SBDs 13, and two IGBTs 12, from two power terminals 41 and 42 toward two power terminals 43 in the first arrangement direction (which is the same as the first direction x in semiconductor device A2). Therefore, each of the two MOSFETs 11 is positioned closer to the two power terminals 41 and 42 than each of the two IGBTs 12, and each of the two SBDs 13 is positioned between each of the two MOSFETs 11 and each of the two IGBTs 12.

[0095] The switching circuit 2 of semiconductor device A2 comprises two MOSFETs 21, two IGBTs 22, and two SBDs 23. In the second arrangement direction (which is the same as the first direction x in semiconductor device A2), these are arranged in the order of two MOSFETs 21, two SBDs 23, and two IGBTs 22, from two power terminals 41 and 42 toward two power terminals 43. Therefore, each of the two MOSFETs 21 is positioned closer to the two power terminals 41 and 42 than each of the two IGBTs 22, and each of the two SBDs 23 is positioned between each of the two MOSFETs 21 and each of the two IGBTs 22.

[0096] The support member 3 of semiconductor device A2 includes an insulating substrate 31 and a main surface metal layer 32. The support member 3 of semiconductor device A2 differs from the support member 3 of semiconductor device A1 in that it does not include a back surface metal layer 33. The insulating substrate 31 of semiconductor device A2 has its back surface 31b bonded to the heat sink 70. In contrast to this configuration, the support member 3 of semiconductor device A2 may also include a back surface metal layer 33, similar to the support member 3 of semiconductor device A1.

[0097] The main surface metal layer 32 of semiconductor device A2 includes a plurality of power wiring sections 321-323 and a plurality of signal wiring sections 324A, 324B, 325A, 325B, 327, and 329. Therefore, the main surface metal layer 32 of semiconductor device A2 differs from the main surface metal layer 32 of semiconductor device A1 in that it further includes a pair of signal wiring sections 327.

[0098] The pair of signal wiring sections 327 are spaced apart from each other in the second direction y, as shown in Figure 9. A thermistor TH is joined to each of the pair of signal wiring sections 327, for example. The thermistor TH is positioned across the pair of signal wiring sections 327. In configurations different from semiconductor device A2, the thermistor TH does not need to be joined to the pair of signal wiring sections 327. As shown in Figure 9, the pair of signal wiring sections 327 are located near one of the four corners of the insulating substrate 31. As shown in Figure 9, the pair of signal wiring sections 327 are located between the pad section 321b and the two signal wiring sections 324A and 325A in the first direction x.

[0099] Furthermore, in semiconductor device A2, a slit 322s is formed in the pad portion 322a of the power wiring portion 322, as shown in Figure 9. In a plan view, the slit 322s extends along the first direction x, with its base end being the edge of one side of the pad portion 322a in the first direction x (the side where the pad portion 322b is located). The tip of the slit 322s is located in the center of the pad portion 322a in the first direction x.

[0100] In semiconductor device A2, the multiple external terminals include, as described above, multiple power terminals 41-43 and multiple signal terminals 44A, 44B, 45A, 45B, 46, and 47. Therefore, the multiple external terminals of semiconductor device A2 differ from those of semiconductor device A1 in that they further include multiple signal terminals 46 and 47, but do not include signal terminal 49. In semiconductor device A2, the multiple power terminals 41-43 are supported by multiple terminal blocks 741-744, respectively, and the multiple signal terminals 44A, 44B, 45A, 45B, 46, and 47 are supported by case 71.

[0101] As shown in Figure 9, a signal connection member 56 is connected to the signal terminal 46. The signal terminal 46 is electrically connected to the power wiring section 321 via the signal connection member 56. As a result, the signal terminal 46 is electrically connected to the drain 111 of each MOSFET 11 and the collector 121 of each IGBT 12. The signal terminal 46 is the output terminal for the third detection signal. The third detection signal is a signal for detecting the voltage applied to the power wiring section 321.

[0102] Each of the pair of signal terminals 47 is connected to a pair of signal connectors 57, as shown in Figure 9. The pair of signal terminals 47 are electrically connected to a pair of signal wiring sections 327 via the pair of signal connectors 57. As a result, the pair of signal terminals 47 are electrically connected to the thermistor TH. The pair of signal terminals 47 are terminals for detecting the temperature inside the case 71. If the thermistor TH is not connected to the pair of signal wiring sections 327, the pair of signal terminals 47 are non-connected terminals.

[0103] In semiconductor device A2, the multiple connection members include, as described above, multiple power connection members 511-513, 521-523, and multiple signal connection members 541A, 541B, 542A, 542B, 551A, 551B, 552A, 552B, 540A, 540B, 550A, 550B, 56, and 57. Therefore, the multiple connection members of semiconductor device A2 differ from those of semiconductor device A1 in that they further include multiple signal connection members 540A, 540B, 550A, 550B, 56, and 57. In the example shown in Figure 9, each power connection member 511-513, 521-523 of semiconductor device A2 is made of bonding wire, but they may be metal plates, as in semiconductor device A1.

[0104] Each of the signal connectors 540A, 540B, 550A, 550B, 56, and 57 is, for example, a bonding wire. The constituent material of each of the signal connectors 540A, 540B, 550A, 550B, 56, and 57 is, for example, gold or a gold alloy. The constituent material may not be gold or a gold alloy, but rather copper or a copper alloy, or aluminum or an aluminum alloy.

[0105] The signal connector 540A is joined to the signal wiring section 324A and the signal terminal 44A within the circuit housing space provided by the case 71 or the like. The signal connector 540A makes electrical contact between the signal wiring section 324A and the signal terminal 44A.

[0106] The signal connector 540B is joined to the signal wiring section 324B and the signal terminal 44B within the circuit housing space provided by the case 71 or the like. The signal connector 540B makes electrical contact between the signal wiring section 324B and the signal terminal 44B.

[0107] The signal connector 550A is joined to the signal wiring section 325A and the signal terminal 45A within the circuit housing space provided by the case 71 or the like. The signal connector 550A makes electrical contact between the signal wiring section 325A and the signal terminal 45A.

[0108] The signal connection member 550B is joined to the signal wiring section 325B and the signal terminal 45B within the circuit housing space provided by the case 71 or the like. The signal connection member 550B makes electrical contact between the signal wiring section 325B and the signal terminal 45B.

[0109] The signal connection member 56 is joined to the pad portion 321a and the signal terminal 46 within the circuit housing space provided by the case 71 or the like. The signal connection member 56 provides electrical conductivity between the power wiring portion 321 and the signal terminal 46.

[0110] Each pair of signal connectors 57 is connected to each of the pair of signal wiring sections 327 and each of the pair of signal terminals 47 within the circuit housing space provided by the case 71 or the like. Each pair of signal connectors 57 provides electrical conductivity between each of the pair of signal wiring sections 327 and each of the pair of signal terminals 47.

[0111] In semiconductor device A2, as with semiconductor device A1, the element withstand voltage of MOSFET 11 is greater than that of IGBT 12. Therefore, in semiconductor device A2, as with semiconductor device A1, failures due to surge voltages can be suppressed when MOSFET 11 and IGBT 12 are operated in parallel, thus suppressing a decrease in reliability. In addition, in semiconductor device A2, the element withstand voltage of MOSFET 21 is greater than that of IGBT 22. As a result, in semiconductor device A2, as with semiconductor device A1, failures due to surge voltages can be suppressed when MOSFET 21 and IGBT 22 are operated in parallel, thus suppressing a decrease in reliability. Furthermore, semiconductor device A2 can achieve the same effects as semiconductor device A1 due to its common configuration.

[0112] Figures 14 to 19 show a semiconductor device A3 according to a third embodiment. As shown in Figures 14 to 19, the semiconductor device A3 comprises two switching circuits 1 and 2, a support member 3, a plurality of external terminals, a plurality of connecting members, and a sealing member 6. The plurality of external terminals include a plurality of power terminals 41 to 43 and a plurality of signal terminals 44A, 44B, 45A, 45B, and 46. The plurality of connecting members include a plurality of power connecting members 511 to 513 and 521 to 523, and a plurality of signal connecting members 541A, 541B, 542A, 542B, 551A, 551B, 552A, and 552B.

[0113] Semiconductor device A3 has a different module structure compared to semiconductor devices A1 and A2. For example, like semiconductor device A1, semiconductor device A3 is a resin-molded type in which two switching circuits 1 and 2 are covered with a sealing member 6, but the configuration of the support member 3, multiple external terminals, and multiple connecting members differs from that of semiconductor device A1.

[0114] The support member 3 of the semiconductor device A3 includes an insulating substrate 31, a main surface metal layer 32, a back surface metal layer 33, a pair of conductive plates 34A, 34B, a pair of insulating plates 35A, 35B, and a plurality of metal members 391, 392.

[0115] Each of the pair of conductive plates 34A and 34B is made of a conductive material, which is, for example, copper or a copper alloy. Alternatively, each conductive plate 34A and 34B may be a laminate in which layers of copper and layers of molybdenum are alternately stacked in the third direction z. In this case, both surface layers in the third direction z of the pair of conductive plates 34A and 34B are made of copper. Each of the pair of conductive plates 34A and 34B is positioned such that its thickness direction coincides with (or approximately coincides with) the third direction z. Each of the pair of conductive plates 34A and 34B is, for example, rectangular in plan view, as shown in Figure 17.

[0116] As shown in Figure 17 and other figures, the conductive plate 34A is mounted on a MOSFET 11, an IGBT 12, and an SBD 13, respectively. The conductive plate 34A is conductive to the drain 111 of the MOSFET 11, the collector 121 of the IGBT 12, and the cathode 132 of the SBD 13. The drain 111, collector 121, and cathode 132 are electrically connected via the conductive plate 34A. The conductive plate 34A is, for example, rectangular.

[0117] As shown in Figure 17 and other figures, the conductive plate 34B is mounted on a MOSFET 21, an IGBT 22, and an SBD 23, respectively. The conductive plate 34B is conductive to the drain 211 of the MOSFET 21, the collector 221 of the IGBT 22, and the cathode 232 of the SBD 23. The drain 211, collector 221, and cathode 232 are electrically connected via the conductive plate 34B. The conductive plate 34B is, for example, in a rectangular parallelepiped shape.

[0118] Each of the pair of insulating plates 35A and 35B is made of a ceramic such as AlN, SiN, or Al2O3. Each of the pair of insulating plates 35A and 35B is, for example, rectangular in plan view, as shown in Figure 17.

[0119] As shown in Figures 18 and 19, the insulating plate 35A is bonded to and supports the conductive plate 34A. The insulating plate 35A may have a plating layer formed on the surface to which the conductive plate 34A is bonded. This plating layer may be made of, for example, silver or a silver alloy. In the example shown in Figures 18 and 19, the insulating plate 35A has a surface facing downward in the third direction z that is exposed from the sealing member 6. In contrast to this configuration, the surface of the insulating plate 35A facing downward in the third direction z may be covered by the sealing member 6.

[0120] As shown in Figures 18 and 19, the insulating plate 35B is bonded to and supports the conductive plate 34B. The insulating plate 35B may have a plating layer formed on the surface to which the conductive plate 34B is bonded. This plating layer is made of, for example, silver or a silver alloy. In the example shown in Figures 18 and 19, the insulating plate 35B has a surface facing downward in the third direction z that is exposed from the sealing member 6. In contrast to this configuration, the surface of the insulating plate 35B facing downward in the third direction z may be covered by the sealing member 6.

[0121] As shown in Figure 16, the insulating substrate 31 of semiconductor device A3 includes a plurality of through holes 311, a plurality of through holes 312, a plurality of openings 313, and a plurality of openings 314.

[0122] Each of the multiple through-holes 311 penetrates the insulating substrate 31 from the main surface 31a to the back surface 31b in the thickness direction (third direction z) of the insulating substrate 31, as shown in Figure 18. As shown in Figures 16 and 18, each metal member 391 is inserted into each through-hole 311. As shown in Figures 16 and 18, the inner surface of each through-hole 311 is not in contact with each metal member 391. In contrast to this configuration, the inner surface of each through-hole 311 may be in contact with each metal member 391. In this disclosure, "inserted" means that a member (for example, each metal member 391) is inserted into a through-hole (for example, each through-hole 311), and is not limited to whether a member is in contact with the inner surface of a through-hole or not. An insulating member different from the insulating substrate 31 may be formed in the gap between each metal member 391 and the through-hole 311.

[0123] The through-hole 312 penetrates the insulating substrate 31 from the main surface 31a to the back surface 31b in the thickness direction (third direction z) of the insulating substrate 31. As shown in Figure 16, a metal member 392 is inserted into the through-hole 312. In the illustrated example, the inner surface of the through-hole 312 is in contact with the metal member 392 (see Figure 16), but it is not necessary for it to be in contact with the metal member 392, unlike this configuration.

[0124] Each of the multiple openings 313 penetrates the insulating substrate 31 from the main surface 31a to the back surface 31b in the thickness direction (third direction z) of the insulating substrate 31, as shown in Figure 19. As shown in Figure 16, each opening 313 surrounds one of the MOSFET 11, IGBT 12, and SBD 13 in a plan view.

[0125] Each of the multiple openings 314 penetrates the insulating substrate 31 from the main surface 31a to the back surface 31b in the thickness direction (third direction z) of the insulating substrate 31, as shown in Figure 19. As shown in Figure 16, each opening 314 surrounds one of the MOSFET 21, IGBT 22, and SBD 23 in a plan view.

[0126] The main metal layer 32 of semiconductor device A3 includes two power wiring sections 322, 323 and a plurality of signal wiring sections 324A, 324B, 325A, 325B, 326, 329, while the back metal layer 33 includes two power wiring sections 331, 332.

[0127] In semiconductor device A3, a main current conduction path is formed by multiple power wiring sections 322, 323, 331, and 332. Power wiring section 322 and power wiring section 331 overlap each other in a plan view, and power wiring section 323 and power wiring section 332 overlap each other in a plan view.

[0128] The power wiring section 331 is formed on the back surface 31b of the insulating substrate 31. As shown in Figures 18 and 19, the power wiring section 331 is bonded to the conductive plate 34A. The power wiring section 331 is electrically connected to the drain 111 of the MOSFET 11, the collector 121 of each IGBT 12, and the cathode 132 of the SBD 13 via the conductive plate 34A.

[0129] As shown in Figures 17 and 19, the power wiring section 331 includes a plurality of openings 331a and through holes 331b. As shown in Figure 19, each of the multiple openings 331a penetrates the power wiring section 331 in a third direction z (the thickness direction of the power wiring section 331). As can be seen from Figure 19, each of the multiple openings 331a overlaps each of the openings 313 of the insulating substrate 31 in a plan view. As shown in Figure 17, each of the multiple openings 331a surrounds one of the MOSFET 11, IGBT 12, and SBD 13 in a plan view. The through holes 331b penetrate the power wiring section 331 in a third direction z (the thickness direction of the power wiring section 331). As shown in Figure 17, a metal member 392 is fitted into the through holes 331b, and the inner surface of the through holes 331b is in contact with the metal member 392. In this disclosure, "fitted" means that a member (for example, a metal member 392) is inserted into a through hole (for example, a through hole 331b), and the member is in contact with the inner surface of the through hole. In other words, the "fitted" state corresponds to the state in which the "inserted" state is in contact with the inner surface of the through hole.

[0130] The power wiring section 332 is formed on the back surface 31b of the insulating substrate 31. As shown in Figures 18 and 19, the power wiring section 332 is bonded to the conductive plate 34B. The power wiring section 332 is electrically connected to the drain 211 of the MOSFET 21, the collector 221 of the IGBT 22, and the cathode 232 of the SBD 23 via the conductive plate 34B. In addition, the power wiring section 332 is electrically connected to the source 112 of the MOSFET 11, the emitter 122 of the IGBT 12, and the anode 131 of the SBD 13 via a plurality of metal members 391, as will be described in detail later.

[0131] As shown in Figures 17 to 19, the power wiring section 332 includes a plurality of openings 332a and a plurality of through holes 332b. As shown in Figures 17 and 19, each of the multiple openings 332a penetrates the power wiring section 332 in a third direction z (the thickness direction of the power wiring section 332). As can be seen from Figure 19, each of the multiple openings 332a overlaps with each of the openings 314 of the insulating substrate 31 in a plan view. As shown in Figure 17, each of the multiple openings 332a surrounds one of the MOSFET 21, IGBT 22, and SBD 23 in a plan view. As shown in Figure 18, each of the multiple through holes 332b penetrates the power wiring section 332 in a third direction z (the thickness direction of the power wiring section 332). As can be seen from Figure 18, each of the through holes 332b overlaps with each of the through holes 323c of the power wiring section 323 in a plan view. Each through-hole 332b is fitted with one of several metal members 391, and the inner surface of each through-hole 332b is in contact with each metal member 391. In the illustrated example, each through-hole 332b is circular in plan view (see Figure 17), but this can be changed as appropriate depending on the shape of each metal member 391.

[0132] The power wiring section 322 is formed on the main surface 31a of the insulating substrate 31. As shown in Figure 15, the power wiring section 322 has multiple power connection members 521 to 523 joined to it, and is electrically connected to the source 212 of the MOSFET 21, the emitter 222 of the IGBT 22, and the anode 231 of the SBD 23 via the multiple power connection members 521 to 523.

[0133] The power wiring section 323 is formed on the main surface 31a of the insulating substrate 31. As shown in Figure 15, the power wiring section 323 has multiple power connection members 511 to 513 joined to it, and is electrically connected to the source 112 of the MOSFET 11, the emitter 122 of the IGBT 12, and the anode 131 of the SBD 13 via the multiple power connection members 511 to 513. In addition, the power wiring section 323 is electrically connected to the drain 211 of the MOSFET 21, the collector 221 of the IGBT 22, and the cathode 232 of the SBD 23 via multiple metal members 391, as will be described in detail later.

[0134] As shown in Figure 15, the power wiring section 323 includes a plurality of through holes 323c. Each of the plurality of through holes 323c penetrates the power wiring section 323 in a third direction z (the thickness direction of the power wiring section 323), as shown in Figure 18. As shown in Figures 15 and 18, one of a plurality of metal members 391 is fitted into each through hole 323c, and the inner surface of each through hole 323c is in contact with each metal member 391. In the illustrated example, each through hole 323c is circular in plan view (see Figure 15), but this can be appropriately changed according to the shape of each metal member 391.

[0135] Each of the multiple metal members 391 penetrates the insulating substrate 31 in the third direction z (the thickness direction of the insulating substrate 31), as shown in Figure 18, and connects the power wiring section 323 and the power wiring section 332. Therefore, the power wiring section 323 and the power wiring section 332 are at the same potential via the multiple metal members 391. In other words, the power wiring section 323 and the power wiring section 332 are connected to the source 112 of the MOSFET 11, the emitter 122 of the IGBT 12, and the anode 131 of the SBD 13, respectively, and also to the drain 211 of the MOSFET 21, the collector 221 of the IGBT 22, and the cathode 232 of the SBD 23. Each metal member 391 is, for example, columnar. In the illustrated example, the plan view shape of each metal member 391 is circular (see Figures 15 to 17), but the plan view shape of each metal member 391 may be elliptical or polygonal, not circular. The constituent material of each metal component 391 is, for example, copper or a copper alloy.

[0136] As shown in Figures 15 to 18, each of the multiple metal members 391 is fitted into each through-hole 323c of the power wiring section 323 and each through-hole 332b of the power wiring section 332, and is also inserted into each through-hole 311 of the insulating substrate 31. Each metal member 391 is in contact with the inner surface of each through-hole 323c and each through-hole 332b. Each metal member 391 is supported by being fitted into each through-hole 323c and each through-hole 332b. If there are gaps between each metal member 391 and the inner surface of each through-hole 323c, and between each metal member 391 and the inner surface of each through-hole 332b, solder can be poured into these gaps. This fills the gaps with solder, fixing each metal member 391 to the power wiring section 323 and the power wiring section 332. Furthermore, when solder is poured in, the gaps between each metal component 391 and the inner surface of the through-hole 311 in the insulating substrate 31 may also be filled with solder.

[0137] The metal member 392 penetrates the insulating substrate 31 in the third direction z (the thickness direction of the insulating substrate 31), and connects the power wiring section 331 and the signal wiring section 326. The metal member 392 is, for example, columnar. In the illustrated example, the plan view shape of the metal member 392 is circular (see Figures 15 to 17), but the plan view shape of the metal member 392 may be elliptical or polygonal, not circular. The constituent material of the metal member 392 is, for example, copper or a copper alloy.

[0138] As shown in Figures 15 to 17, the metal member 392 is fitted into the through-hole 326a of the signal wiring section 326 and the through-hole 331b of the power wiring section 331, and is also inserted into the through-hole 312 of the insulating substrate 31. As shown in Figures 15 to 17, the metal member 392 is in contact with the inner surfaces of the through-holes 326a, 331b, and 312, respectively. If a gap occurs between the metal member 392 and the inner surfaces of the through-holes 326a, 331b, and 312, solder can be poured into this gap. This fills the gap with solder, fixing the metal member 392 to the power wiring section 322, the signal wiring section 326, and the insulating substrate 31.

[0139] In semiconductor device A3, as can be seen from Figures 15 and 19, the MOSFET 11, IGBT 12, and SBD 13 are each housed in recesses formed by the openings 313 of the insulating substrate 31 and the openings 331a of the power wiring section 331, and the conductive plate 34A. In the illustrated example, the main surface 11a of the MOSFET 11, the main surface 12a of the IGBT 12, and the main surface 13a of the SBD 13 each overlap either the insulating substrate 31 or the power wiring section 331, or they may overlap the power wiring section 322, when viewed in a direction perpendicular to the third direction z (for example, the second direction y). In any case, the MOSFET 11, IGBT 12, and SBD 13 each do not protrude above the power wiring section 322 in the third direction z. Similarly, as can be seen from Figures 15 and 19, the MOSFET 21, IGBT 22, and SBD 23 are each housed in recesses formed by the openings 314 of the insulating substrate 31 and the openings 332a of the power wiring section 332, and the conductive plate 34B. In the illustrated example, the main surface 21a of the MOSFET 21, the main surface 22a of the IGBT 22, and the main surface 23a of the SBD 23 each overlap either the insulating substrate 31 or the power wiring section 332 when viewed in a direction perpendicular to the third direction z (for example, the second direction y), but may also overlap the power wiring section 323. In any case, the MOSFET 21, IGBT 22, and SBD 23 each do not protrude above the power wiring section 323 in the third direction z.

[0140] In semiconductor device A3, power terminal 41 is not a metal plate but part of the power wiring section 331. Power terminal 42 is not a metal plate but part of the power wiring section 322. One of the two power terminals 43 is not a metal plate but part of the power wiring section 323. The other of the two power terminals 43 is not a metal plate but part of the power wiring section 332. Each of the multiple power terminals 41-43 is exposed from the sealing member 6. Each surface of the multiple power terminals 41-43 may or may not be plated. Power terminals 41 and 42 overlap each other in a plan view. The two power terminals 43 overlap each other in a plan view. In the illustrated example, semiconductor device A3 includes two power terminals 43, but it may also include only one of the two power terminals 43, in a different configuration. In semiconductor device A3, all of the power terminals 41 to 43 are located on one side of the first direction x relative to the two switching circuits 1 and 2. Of the switching circuits 1, MOSFET 11 has the shortest conduction path to power terminal 41, and of the switching circuits 2, MOSFET 21 has the shortest conduction path to power terminal 41.

[0141] In semiconductor device A3, as with semiconductor devices A1 and A2, the element withstand voltage of MOSFET 11 is greater than that of IGBT 12. Therefore, in semiconductor device A3, as with semiconductor devices A1 and A2, failures due to surge voltages can be suppressed when MOSFET 11 and IGBT 12 are operated in parallel, thus suppressing a decrease in reliability. In addition, in semiconductor device A3, the element withstand voltage of MOSFET 21 is greater than that of IGBT 22. As a result, in semiconductor device A3, as with semiconductor devices A1 and A2, failures due to surge voltages can be suppressed when MOSFET 21 and IGBT 22 are operated in parallel, thus suppressing a decrease in reliability. Furthermore, semiconductor device A3 has a configuration common to semiconductor devices A1 and A2, and can achieve the same effects as semiconductor devices A1 and A2.

[0142] Figures 20 to 24 show a semiconductor device A4 according to the fourth embodiment. As shown in Figures 20 to 24, the semiconductor device A4 comprises two switching circuits 1 and 2, a support member 3, a plurality of external terminals, a plurality of connecting members and a sealing member 6. The plurality of external terminals include a plurality of power terminals 41 to 43 and a plurality of signal terminals 44A, 44B, 45A, 45B, and 49. The plurality of connecting members include a plurality of power connecting members 511 to 513 and 521 to 523, and a plurality of signal connecting members 541A, 541B, 542A, 542B, 551A, 551B, 552A, 552B, 540A, 540B, 550A, and 550B.

[0143] Semiconductor device A4 has a different module structure compared to semiconductor devices A1 to A3. For example, although semiconductor device A4 is a resin-molded type with two switching circuits 1 and 2 covered by a sealing member 6, similar to semiconductor devices A1 and A3, the configuration of the support member 3, external terminals, and multiple connecting members differs from semiconductor devices A1 and A3. In this explanation, we will describe the case where switching circuit 1 of semiconductor device A4 includes one MOSFET 11, two IGBTs 12, and one SBD 13, and switching circuit 2 includes one MOSFET 21, two IGBTs 22, and one SBD 23.

[0144] The support member 3 of the semiconductor device A4 includes a pair of conductive plates 34A, 34B, an insulating plate 35, a pair of insulating plates 36A, 36B, and a plurality of signal wiring sections 371A, 371B, 372A, 372B.

[0145] The conductive plate 34A of semiconductor device A4, like the conductive plate 34A of semiconductor device A3, mounts the switching circuit 1. However, in semiconductor device A4, as shown in Figure 22, the MOSFET 11, the two IGBTs 12, and the SBD 13 are arranged on the conductive plate 34A along the second direction y. Also, in the second direction y, the MOSFET 11 and the SBD 13 are positioned between the two IGBTs 12.

[0146] The conductive plate 34B of semiconductor device A4, like the conductive plate 34B of semiconductor device A3, mounts the switching circuit 2. However, in semiconductor device A4, as shown in Figure 22, the MOSFET 21, the two IGBTs 22, and the SBD 23 are arranged on the conductive plate 34B along the second direction y. Also, in the second direction y, the MOSFET 21 and the SBD 23 are positioned between the two IGBTs 22.

[0147] The insulating plate 35 is made of ceramics, similar to the insulating plates 35A and 35B of semiconductor device A3. The insulating plate 35 is supported by both of the pair of conductive plates 34A and 34B that are bonded to it. In contrast to this configuration, semiconductor device A4 may have a pair of insulating plates 35A and 35B instead of the insulating plate 35, similar to semiconductor device A3, with the conductive plate 34A bonded to insulating plate 35A and the conductive plate 34B bonded to insulating plate 35B.

[0148] The pair of insulating plates 36A and 36B are each made of, for example, glass epoxy resin. Insulating plate 36A is placed on the conductive plate 34A, as shown in Figures 22 to 24. Insulating plate 36A is strip-shaped in a plan view, extending in the second direction y, as shown in Figure 22. Insulating plate 36A is located on the side where the power terminal 41 is located, in the first direction x, as shown in Figure 22, relative to the switching circuit 1 (MOSFET 11, two IGBTs 12, and SBD 13). Insulating plate 36B is placed on the conductive plate 34B, as shown in Figures 22 to 24. Insulating plate 36B is strip-shaped in a plan view, extending in the second direction y, as shown in Figure 22. Insulating plate 36B is located on the side where the power terminal 43 is located, in the first direction x, as shown in Figure 22, relative to the switching circuit 2 (MOSFET 21, two IGBTs 22, and SBD 23).

[0149] The two signal wiring sections 371A and 372A are arranged on the insulating plate 36A, as shown in Figures 22 to 24. The two signal wiring sections 371A and 372A are each made of, for example, copper or a copper alloy. The two signal wiring sections 371A and 372A are each strip-shaped in a plan view, extending in the second direction y, as shown in Figure 22. As shown in Figure 22, the signal wiring section 371A is connected to a plurality of signal connection members 541A and 542A, and is conductive to the gate 113 of the MOSFET 11 and the gate 123 of each IGBT 12 via the plurality of signal connection members 541A and 542A. The signal wiring section 371A transmits the first drive signal, similar to the signal wiring section 324A. Furthermore, the signal wiring section 371A is connected to a signal connection member 540A, and is electrically connected to the signal terminal 44A (input terminal of the first drive signal) via the signal connection member 540A. The signal wiring section 372A is connected to a plurality of signal connection members 551A and 552A, and is electrically connected to the source 112 of the MOSFET 11 and the emitter 122 of each IGBT 12 via the plurality of signal connection members 551A and 552A. The signal wiring section 372A transmits the first detection signal in the same way as the signal wiring section 325A. In addition, the signal wiring section 372A is connected to a signal connection member 550A, and is electrically connected to the signal terminal 45A (output terminal of the first detection signal) via the signal connection member 550A.

[0150] The two signal wiring sections 371B and 372B are arranged on the insulating plate 36B, as shown in Figures 22 to 24. The two signal wiring sections 371B and 372B are each made of, for example, copper or a copper alloy. The two signal wiring sections 371B and 372B are each strip-shaped in a plan view, extending in the second direction y, as shown in Figure 22. As shown in Figure 22, the signal wiring section 371B is connected to a plurality of signal connection members 541B and 542B, and is conductive to the gate 213 of the MOSFET 21 and the gate 223 of each IGBT 22 via the plurality of signal connection members 541B and 542B. The signal wiring section 371B transmits the second drive signal, similar to the signal wiring section 324B. Furthermore, the signal wiring section 371B is connected to a signal connection member 540B, and is electrically connected to the signal terminal 44B (input terminal for the second drive signal) via the signal connection member 540B. Multiple signal connection members 551B and 552B are connected to the signal wiring section 372B, and are electrically connected to the source 212 of the MOSFET 21 and the emitter 222 of each IGBT 22 via the multiple signal connection members 551B and 552B. The signal wiring section 372B transmits the second detection signal in the same way as the signal wiring section 325B. In addition, the signal wiring section 372B is connected to a signal connection member 550B, and is electrically connected to the signal terminal 45B (output terminal for the second detection signal) via the signal connection member 550B.

[0151] The power terminal 41 of the semiconductor device A4 has a joint 411 that is electrically bonded to the conductive plate 34A. In the example shown in Figure 22, the tip of the joint 411 (the side opposite the base end to the part connected to the terminal 412) is comb-shaped, and the comb-shaped portion is electrically bonded to the conductive plate 34A. The method of bonding the joint 411 and the conductive plate 34A is not particularly limited, but may include, for example, laser bonding, ultrasonic bonding, or bonding using a conductive bonding material.

[0152] The power terminal 42 of the semiconductor device A4 has a joint 421 which includes a connecting portion 421a and a plurality of extensions 421b. The connecting portion 421a is connected to the terminal portion 422. The connecting portion 421a is connected to each of the plurality of extensions 421b. The plurality of extensions 421b are strip-shaped and extend from the connecting portion 421a in a first direction x. In a plan view, the plurality of extensions 421b are aligned in a second direction y and are arranged parallel to each other. In a plan view, the tip portion of each extension 421b overlaps with an insulating block material 429. The tip portion is joined to each block material 429 by a bonding material (not shown). The tip portion is the edge portion of the extension 421b opposite to the side connected to the connecting portion 421a in the first direction x. Furthermore, the joining of each extension portion 421b and each block material 429 is not limited to joining using a joining material, but may also be done by laser welding or ultrasonic joining.

[0153] The power terminal 43 of semiconductor device A4 has a joint 431 that is electrically bonded to the conductive plate 34B. In the example shown in Figure 22, the tip of the joint 431 (the side opposite the base end to the part connected to the terminal 432) is comb-shaped, and the comb-shaped portion is electrically bonded to the conductive plate 34B. The method of bonding the joint 431 and the conductive plate 34B is not particularly limited, but may include, for example, laser bonding, ultrasonic bonding, or bonding using a conductive bonding material.

[0154] The insulating member 40 has electrical insulating properties, and its constituent material is, for example, insulating paper. As shown in Figures 4, 6, 9, 10, and 11, the insulating member 40 is sandwiched between the terminal portion 412 of the power terminal 41 and the terminal portion 422 of the power terminal 42 in the third direction z. The insulating member 40 insulates the two power terminals 41 and 42 from each other. A portion of the insulating member 40 (one side in the first direction x) is covered by the sealing member 6.

[0155] The power connection member 511 is joined to the source 112 of the MOSFET 11 and the conductive plate 34B, making them electrically connected. Each power connection member 512 is joined to the emitter 122 of each IGBT 12 and the conductive plate 34B, making them electrically connected. The power connection member 513 is joined to the anode 131 of the SBD 13 and the conductive plate 34B, making them electrically connected.

[0156] The power connection member 521 is connected to the source 212 of the MOSFET 21 and one of the multiple extensions 421b of the power terminal 42, thereby making them electrically connected. Each power connection member 522 is connected to the emitter 222 of each IGBT 22 and one of the multiple extensions 421b of the power terminal 42, thereby making them electrically connected. The power connection member 523 is connected to the anode 231 of the SBD 23 and one of the multiple extensions 421b of the power terminal 42, thereby making them electrically connected.

[0157] In semiconductor device A4, as with semiconductor devices A1 to A3, the element withstand voltage of MOSFET 11 is greater than the element withstand voltage of IGBT 12. Therefore, in semiconductor device A4, as with semiconductor devices A1 to A3, failures due to surge voltages can be suppressed when MOSFET 11 and IGBT 12 are operated in parallel, thus suppressing a decrease in reliability. In addition, in semiconductor device A4, the element withstand voltage of MOSFET 21 is greater than the element withstand voltage of IGBT 22. As a result, in semiconductor device A4, as with semiconductor devices A1 to A3, failures due to surge voltages can be suppressed when MOSFET 21 and IGBT 22 are operated in parallel, thus suppressing a decrease in reliability. Furthermore, semiconductor device A4 has a configuration common to semiconductor devices A1 to A3, and can achieve the same effects as semiconductor devices A1 to A3.

[0158] In the first to fourth embodiments, each semiconductor device A1 to A4 is shown as an example in which the switching circuit 1 includes at least one MOSFET 11, one IGBT 12, and one SBD 13. However, the switching circuit 1 does not need to include an SBD 13 as long as it includes at least one MOSFET 11 and one IGBT 12. For example, Figure 25 shows an example in semiconductor device A1 in which the switching circuit 1 includes a MOSFET 11 and two IGBTs 12. As can be seen from Figure 25, the same applies to the switching circuit 2. When the MOSFET 11 and IGBT 12 are operated in parallel, in order to suppress power loss due to on-resistance, the MOSFET 11 is preferentially operated in the low current range, and the IGBT 12 is preferentially operated in the high current range. In this case, the load is relatively lower in the low current range than when operating in the high current range, and relatively higher in the high current range than when operating in the low current range. Therefore, in the semiconductor device shown in Figure 25, the number of IGBTs 12 that operate preferentially in the high-current range is greater than the number of MOSFETs 11 that operate preferentially in the low-current range.

[0159] In the first to fourth embodiments, examples were shown in which each semiconductor device A1 to A4 is equipped with two switching circuits 1 and 2, but a configuration with only one switching circuit 1 is also possible. For example, Figure 26 shows an example in which semiconductor device A1 is equipped with switching circuit 1 but not switching circuit 2.

[0160] The semiconductor device relating to this disclosure is not limited to the embodiments described above. The specific configuration of each part of the semiconductor device relating to this disclosure can be modified in various ways. For example, this disclosure includes the embodiments described in the following appendix. Note 1. The first MOSFET and, First IGBT and, It is equipped with, The drain of the first MOSFET and the collector of the first IGBT are electrically connected. The source of the first MOSFET and the emitter of the first IGBT are electrically connected. A semiconductor device wherein the element breakdown voltage of the first MOSFET is greater than the element breakdown voltage of the first IGBT. Note 2. The first MOSFET is composed of SiC, The semiconductor device described in Appendix 1, wherein the first IGBT is composed of Si. Note 3. A first power terminal that conducts to the drain of the first MOSFET and the collector of the first IGBT, A second power terminal that conducts to the source of the first MOSFET and the emitter of the first IGBT, It also has the following features: The semiconductor device according to Appendix 1 or Appendix 2, wherein the inductance of the first conduction path from the drain of the first MOSFET to the first power terminal is smaller than the inductance of the second conduction path from the collector of the first IGBT to the first power terminal. Note 4. The semiconductor device according to Appendix 3, further comprising a first Schottky barrier diode electrically connected in parallel to the first MOSFET and the first IGBT. Note 5. The semiconductor device described in Appendix 4, wherein the first Schottky barrier diode is composed of SiC. Note 6. The semiconductor device according to Appendix 4 or Appendix 5, wherein the length of the third conduction path from the first Schottky barrier diode to the first power terminal is greater than the length of the first conduction path and less than the length of the second conduction path. Note 7. The second MOSFET and Second IGBT and, Furthermore, The drain of the second MOSFET and the collector of the second IGBT are electrically connected. The source of the second MOSFET and the emitter of the second IGBT are electrically connected. The semiconductor device according to any one of Appendix 3 to Appendix 6, wherein the element breakdown voltage of the second MOSFET is greater than the element breakdown voltage of the second IGBT. Note 8. The second MOSFET is composed of SiC, The semiconductor device described in Appendix 7, wherein the second IGBT is composed of Si. Note 9. The device further comprises a third power terminal that conducts to the source of the second MOSFET and the emitter of the second IGBT, The second power terminal is conductive to the drain of the second MOSFET and the collector of the second IGBT. The semiconductor device according to Appendix 7 or Appendix 8, wherein the inductance of the fourth conduction path from the source of the second MOSFET to the first power terminal is smaller than the inductance of the fifth conduction path from the emitter of the second IGBT to the first power terminal. Note 10. The semiconductor device according to Appendix 9, further comprising a second Schottky barrier diode electrically connected in parallel with the second MOSFET and the second IGBT. Note 11. The semiconductor device described in Appendix 10, wherein the second Schottky barrier diode is composed of SiC. Note 12. The semiconductor device according to Appendix 10 or Appendix 11, wherein the length of the sixth conduction path from the second Schottky barrier diode to the first power terminal is greater than the length of the fourth conduction path and less than the length of the fifth conduction path. Note 13. The first conductor to which the first power terminal is connected, The second conductor to which the second power terminal is connected, The third conductor to which the third power terminal is connected, It also has the following features: The first conductor includes a first pad portion that conducts to the drain of the first MOSFET and the collector of the first IGBT. The second conductor includes a second pad portion that conducts to the source of the first MOSFET, the emitter of the first IGBT, the drain of the second MOSFET, and the collector of the second IGBT. The semiconductor device according to any one of Appendix 9 to 12, wherein the third conductor includes a third pad portion that conducts to the source of the second MOSFET and the emitter of the second IGBT. Note 14. Each of the first MOSFET and the second MOSFET has a vertical structure in which the drain and the source are separated in the respective thickness direction. The semiconductor device according to Appendix 13, wherein each of the first IGBT and the second IGBT has a vertical structure in which the collector and emitter are spaced apart in the respective thickness direction. Note 15. A first connecting member electrically connects the source and the second pad portion of the first MOSFET, A second connecting member electrically connects the emitter and the second pad portion of the first IGBT, Furthermore, The semiconductor device according to Appendix 14, wherein the drain of the first MOSFET and the collector of the first IGBT are electrically connected to the first pad portion. Note 16. A third connecting member electrically connects the source and the third pad portion of the second MOSFET, The device further comprises a fourth connecting member that electrically connects the emitter of the second IGBT to the third pad portion, The semiconductor device according to Appendix 15, wherein the drain of the second MOSFET and the collector of the second IGBT are electrically connected to the second pad portion. Note 17. The first MOSFET and the first IGBT are arranged along a first arrangement direction that intersects the thickness direction of the first pad portion. The second MOSFET and the second IGBT are arranged along a second array direction that intersects the thickness direction of the second pad portion. The semiconductor device described in Appendix 16, wherein the first arrangement direction and the second arrangement direction are the same direction. Note 18. The semiconductor device according to Appendix 17, wherein the first power terminal and the third power terminal are located opposite the first IGBT to the first MOSFET in the first array direction, and opposite the second IGBT to the second MOSFET in the second array direction. [Explanation of symbols]

[0161] A1-A4: Semiconductor devices 1,2: Switching circuits 11,21:MOSFET 11a,21a:Main surface 11b, 21b: Reverse side 111, 211: Drain 112,212: Source 113,213: Gate 12,22:IGBT 12a,22a:Main surface 12b, 22b: Reverse side 121, 221: Collector 122,222: Emitter 123,223: Gate 13,23:SBD 13a,23a:Main surface 13b, 23b: Reverse side 131, 231: Anode 132,232: Cathode 3: Support member 31: Insulating substrate 31a: Main surface 31b: Back side 311,312: Through hole 313,314: Openings 32: Main surface metal layer 321, 322, 323: Power wiring section; 321a, 321b: Pad section 322a, 322b: Pad section 322s: Slit 323a, 323b: Pad portion 323c: Through hole 324A, 324B: Signal wiring section 325A, 325B: Signal wiring section 326,327,329: Signal wiring section 326a: Through hole 33: Metal layer on the back 331, 332: Power wiring section 331a, 332a: Opening 331b, 332b: Through hole 34A, 34B: Conductive board; 35, 35A, 35B: Insulating board 36A, 36B: Insulating board 371A, 371B: Signal wiring section 372A, 372B: Signal wiring section; 391, 392: Metal components 40: Insulating material 41, 42, 43: Power terminals 411,421,431:Joint section 412,422,432:Terminal section 421a: Connecting part 421b: Extension part 429: Block material 44A, 44B: Signal terminals 45A, 45B: Signal terminals 46, 47, 49: Signal terminals 511, 512, 513, 521, 522, 523: Power connection components 540A, 540B, 541A, 541B, 542A, 542B: Signal connection components 550A, 550B, 551A, 551B, 552A, 552B: Signal connection components 56, 57: Signal connection member 6: Sealing member 61: Main resin surface 62: Back surface of resin 631~634: Resin side 70: Heat sink 71: Case 72: Frame 73: Top panel 741~744: Terminal block 75: Resin component TH: Thermistor

Claims

1. First MOSFET and First-party IGBTs, A first power terminal that conducts to the drain of the first MOSFET and the collector of the first IGBT, A second power terminal that conducts to the source of the first MOSFET and the emitter of the first IGBT, A first Schottky barrier diode electrically connected in parallel to the first MOSFET and the first IGBT, It is equipped with, The drain of the first MOSFET and the collector of the first IGBT are electrically connected. The source of the first MOSFET and the emitter of the first IGBT are electrically connected. The element breakdown voltage of the first MOSFET is greater than that of the element breakdown voltage of the first IGBT. The inductance of the first conduction path from the drain of the first MOSFET to the first power terminal is smaller than the inductance of the second conduction path from the collector of the first IGBT to the first power terminal. A semiconductor device in which the length of the third conduction path from the first Schottky barrier diode to the first power terminal is greater than the length of the first conduction path and less than the length of the second conduction path.

2. The first MOSFET is composed of SiC, The first IGBT is composed of Si, The semiconductor device according to claim 1, wherein the first Schottky barrier diode is composed of SiC.

3. The first MOSFET, the first IGBT, and the first Schottky barrier diode are arranged along the first array direction. The semiconductor device according to claim 1, wherein in the first arrangement direction, the first Schottky barrier diode is disposed between the first MOSFET and the first IGBT.

4. The first power terminal is further connected to a first conductor, The first conductor includes a first element pad portion on which the first MOSFET, the first IGBT, and the first Schottky barrier diode are mounted, The first element pad portion is electrically connected to the drain of the first MOSFET and the collector of the first IGBT. The semiconductor device according to claim 3, wherein the first arrangement direction intersects the thickness direction of the first element pad portion.

5. The first conductor includes a first terminal pad portion to which the first power terminal is joined, The first terminal pad portion is connected to the first element pad portion, The semiconductor device according to claim 4, wherein the first element pad portion extends from the first terminal pad portion in the first arrangement direction.

6. The second MOSFET, Second-generation IGBTs, Furthermore, The drain of the second MOSFET and the collector of the second IGBT are electrically connected. The source of the second MOSFET and the emitter of the second IGBT are electrically connected. The semiconductor device according to claim 4 or 5, wherein the element breakdown voltage of the second MOSFET is greater than the element breakdown voltage of the second IGBT.

7. The device further comprises a third power terminal that conducts to the source of the second MOSFET and the emitter of the second IGBT, The second power terminal is electrically connected to the drain of the second MOSFET and the collector of the second IGBT. The semiconductor device according to claim 6, wherein the inductance of the fourth conduction path from the source of the second MOSFET to the first power terminal is smaller than the inductance of the fifth conduction path from the emitter of the second IGBT to the first power terminal.

8. The semiconductor device according to claim 7, further comprising a second Schottky barrier diode electrically connected in parallel with the second MOSFET and the second IGBT.

9. The above-mentioned second MOSFET is composed of SiC, The second IGBT is composed of Si, The semiconductor device according to claim 8, wherein the second Schottky barrier diode is composed of SiC.

10. The semiconductor device according to claim 8, wherein the length of the sixth conduction path from the second Schottky barrier diode to the first power terminal is greater than the length of the fourth conduction path and less than the length of the fifth conduction path.

11. The second MOSFET, the second IGBT, and the second Schottky barrier diode are arranged along the second array direction. The semiconductor device according to claim 10, wherein in the second arrangement direction, the second Schottky barrier diode is disposed between the second MOSFET and the second IGBT.

12. The device further comprises a second conductor to which the second power terminal is connected, The second conductor includes a second element pad portion on which the second MOSFET, the second IGBT, and the second Schottky barrier diode are mounted, The second element pad portion is electrically connected to the source of the first MOSFET, the emitter of the first IGBT, the drain of the second MOSFET, and the collector of the second IGBT. The semiconductor device according to claim 11, wherein the second arrangement direction intersects the thickness direction of the second element pad portion.

13. The second conductor includes a second terminal pad portion to which the second power terminal is joined. The second terminal pad portion is connected to the second element pad portion, The semiconductor device according to claim 12, wherein the second element pad portion extends from the second terminal pad portion in the second array direction.

14. The semiconductor device according to claim 13, wherein the first arrangement direction and the second arrangement direction are the same.

15. The semiconductor device according to claim 14, wherein the first power terminal and the third power terminal are located opposite the first IGBT to the first MOSFET in the first arrangement direction, and opposite the second IGBT to the second MOSFET in the second arrangement direction.

16. The third power terminal is further connected to a third conductor, The semiconductor device according to claim 12, wherein the third conductor includes a third pad portion that conducts to the source of the second MOSFET and the emitter of the second IGBT.

17. Each of the first MOSFET and the second MOSFET has a vertical structure in which the drain and the source are arranged apart in the respective thickness direction. The semiconductor device according to claim 16, wherein each of the first IGBT and the second IGBT has a vertical structure in which the collector and emitter are spaced apart in the respective thickness direction.

18. A first connecting member electrically connects the source of the first MOSFET and the second element pad portion, The device further comprises a second connecting member that electrically connects the emitter of the first IGBT and the second element pad portion, The semiconductor device according to claim 17, wherein the drain of the first MOSFET and the collector of the first IGBT are electrically connected to the first element pad portion.

19. A third connecting member electrically connects the source and the third pad portion of the second MOSFET, A fourth connecting member electrically connects the emitter of the second IGBT and the third pad portion, Furthermore, The semiconductor device according to claim 18, wherein the drain of the second MOSFET and the collector of the second IGBT are electrically connected to the second element pad portion.

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