Method and system for modifying a mask plate layout and mask plate

Abstract

The application provides a mask plate layout correction method and system and a mask plate. The method comprises the following steps: S1, acquiring technology node information and process level information of a layout to determine a target main pattern which needs to add an auxiliary pattern on the adjacent side; S2, calculating the distance from the target main pattern to the main pattern adjacent thereto and recording the initial distance value; calculating the width value of the target main pattern; S3, generating an initial auxiliary pattern on the adjacent side of the target main pattern according to the width value of the target main pattern and the initial distance value; S4, calculating the distance from the target main pattern to the pattern adjacent thereto and recording the correction distance value; judging whether the correction distance value meets the optimization condition; S5, when the correction distance value meets the optimization condition, adjusting the number value of the auxiliary pattern and / or adjusting the width value of the auxiliary pattern, and repeatedly executing S4 until the correction distance value no longer meets the optimization condition; and S6, performing overexposure checking on the auxiliary pattern. The method is used for increasing the photolithography process window of the mask plate.

Description

Technical Field

[0001] This invention relates to the field of semiconductor manufacturing technology, and in particular to a method and system for correcting a photomask layout, and a photomask. Background Technology

[0002] As circuit integration density and scale increase, the size of unit devices in circuits continues to shrink, and the requirements for integrated circuit manufacturing processes continue to increase. For example, the critical dimension (CD) continues to decrease, and chip manufacturing requires increasingly higher photolithographic resolution.

[0003] To address the resolution limitations of traditional photolithography, existing technologies add sub-resolution auxiliary patterns, smaller than the resolution limit, around the lithographic pattern. These auxiliary patterns are typically added according to rules to meet exposure process requirements. The addition of these auxiliary patterns affects the precision and quality of the photolithography process, thereby impacting the yield of semiconductor devices.

[0004] However, existing technologies often result in uneven light intensity distribution around the main pattern after adding auxiliary patterns, leading to a small photolithography window and potential for open or short circuits in devices, resulting in low product yield and high process risk. Therefore, there is an urgent need for a novel method, system, and mask for correcting photomask layouts to address these issues. Summary of the Invention

[0005] The purpose of this invention is to provide a method and system for correcting a photomask pattern, and a photomask, wherein the method is used to increase the photolithography process window of the photomask.

[0006] In a first aspect, the present invention provides a method for correcting a photomask layout, used to add auxiliary graphics between main graphics in a photomask layout, comprising the following steps: S1, obtaining technical node information and process level information of the layout to determine the target main graphics for which auxiliary graphics need to be added on the adjacent side; S2, calculating the distance from the target main graphics to the adjacent main graphics and recording it as an initial distance value; calculating the width value of the target main graphics; S3, generating initial auxiliary graphics on the adjacent side of the target main graphics according to the width value of the target main graphics and the initial distance value; S4, calculating the distance from the target main graphics to the adjacent graphics and recording it as a corrected distance value; determining whether the corrected distance value meets the optimization conditions; S5, when the corrected distance value meets the optimization conditions, adjusting the number of auxiliary graphics and / or adjusting the width value of the auxiliary graphics, repeating S4 until the corrected distance value no longer meets the optimization conditions; S6, performing an overexposure check on the auxiliary graphics; if the overexposure check fails, reducing the width value of the auxiliary graphics when executing step S5, repeating S4-S5 until the overexposure check passes.

[0007] The beneficial effects of the method of this invention are as follows: The method of this application determines the target main graphic that requires the addition of auxiliary graphics on its adjacent sides by acquiring the technical node information and process level information of the layout; calculates the distance from the target main graphic to its adjacent main graphic and records it as an initial distance value; calculates the width value of the target main graphic; generates initial auxiliary graphics on the adjacent side of the target main graphic based on the width value of the target main graphic and the initial distance value; calculates the distance from the target main graphic to its adjacent graphics and records it as a corrected distance value; determines whether the corrected distance value meets the optimization conditions; when the corrected distance value meets the optimization conditions, adjusts the number of auxiliary graphics and the width value of the auxiliary graphics, and repeats the above steps until the corrected distance value no longer meets the optimization conditions. This application can improve the light intensity distribution around the main graphic, obtain a better exposure profile, which is beneficial for increasing the lithography process window, improving product yield, and reducing process risks. Since the main graphic and auxiliary graphics are both located on the same photomask, it can save the material required for manufacturing the photomask and improve the production efficiency of the photomask.

[0008] Optionally, step S2 includes: calculating the distance from the first side of the target main graphic to its adjacent main graphic and recording it as a first initial distance value; calculating the distance from the second side of the target main graphic to its adjacent main graphic and recording it as a second initial distance value; and calculating the distance from the first side of the target main graphic to the second side of the target main graphic, i.e., the width value of the target main graphic. The beneficial effect is that this embodiment obtains the distances from the two sides of the target main graphic to the adjacent main graphic, which enables the acquisition of more detailed information about the distribution of main graphics around the target main graphic, facilitating subsequent graphic optimization.

[0009] Optionally, step S4 includes calculating the distance from the first side of the target main graphic to its adjacent graphic and recording it as a first corrected distance value; calculating the distance from the second side of the target main graphic to its adjacent graphic and recording it as a second corrected distance value. The beneficial effect is that this embodiment obtains the distances from the two sides of the target main graphic to adjacent main or auxiliary graphics, enabling the acquisition of more detailed distribution information of the main or auxiliary graphics around the target main graphic, facilitating subsequent graphic optimization.

[0010] Optionally, the optimization condition is set to satisfy:

[0011] Wherein, L21 is the first corrected distance value, L22 is the second corrected distance value, W is the width of the target main graphic, and m is a constant greater than zero. Its beneficial effect is that this embodiment provides optimization conditions to filter target main graphics whose distances from two edges to adjacent main or auxiliary graphics satisfy the optimization conditions.

[0012] Optionally, step S5 includes increasing the quantity of the auxiliary graphics while satisfying the plate-making rules; or increasing the width of the auxiliary graphics while satisfying the plate-making rules; or increasing both the quantity and width of the auxiliary graphics while satisfying the plate-making rules. The beneficial effect is that this embodiment achieves the modification of the auxiliary graphics to a state where optimization is no longer needed.

[0013] Optionally, step S6 includes reducing the width value of the auxiliary graphic while satisfying the plate-making rules; or increasing the quantity of the auxiliary graphics and decreasing the width value of the auxiliary graphics while satisfying the plate-making rules. The beneficial effect is that this embodiment achieves further modification of the auxiliary graphics to ensure that the overexposure check of the auxiliary graphics passes.

[0014] Optionally, in step S6, the auxiliary graphic is overexposed, including checking the overexposed area outside the main graphic, and setting the upper limit of light intensity to A times the optical exposure threshold, where A is any positive number less than 1.

[0015] Optionally, step S6 further includes calling the photolithography composite model to perform a process window check on the process fluctuation bandwidth of the current main pattern, setting the upper limit of the fluctuation bandwidth to be B times the critical size value of the main pattern, where B is any positive number less than 1. The beneficial effect is that this embodiment achieves process window checking on the main pattern to ensure that the process window size of the main pattern meets the photolithography requirements.

[0016] In a second aspect, the present invention provides a mask layout correction system for use with the method described in any one of the first aspects, comprising: a processing unit configured to perform step S1, acquiring technical node information and process level information of the layout to determine a target main graphic for which auxiliary graphics need to be added on adjacent sides; the processing unit is further configured to perform step S2, calculating the distance from the target main graphic to its adjacent main graphic and recording it as an initial distance value; calculating the width value of the target main graphic; the processing unit is further configured to perform step S3, generating initial auxiliary graphics on the adjacent sides of the target main graphic based on the width value of the target main graphic and the initial distance value; the processing unit is further configured to perform step S4, calculating the distance from the target main graphic to its adjacent graphics. The corrected distance value is recorded as a correction distance value. The processing unit then determines whether the corrected distance value meets the optimization conditions. The processing unit further executes step S5, whereby, when the corrected distance value meets the optimization conditions, the quantity and width of the auxiliary graphics are adjusted, and step S4 is repeated until the corrected distance value no longer meets the optimization conditions. The processing unit also executes step S6, calling an optical model to perform an overexposure check on the auxiliary graphics. If the overexposure check fails, the width of the auxiliary graphics is reduced during step S5, and steps S4-S5 are repeated until the overexposure check passes. A storage unit stores the initial distance value, the corrected distance value, the width of the target main graphic, the quantity of auxiliary graphics, and the width of the auxiliary graphics.

[0017] Thirdly, the present invention provides a mask template formed using the method described in any one of the first aspects.

[0018] Fourthly, the present invention provides an apparatus including a memory and a processor, wherein the memory stores a program executable on the processor, and when the program is executed by the processor, the apparatus causes the apparatus to perform the method described in any one of the first aspects.

[0019] Fifthly, the present invention provides a readable storage medium storing a program, which, when executed, implements the method described in any one of the first aspects. Attached Figure Description

[0020] Figure 1 A flowchart illustrating a method for correcting a mask template layout provided by the present invention;

[0021] Figure 2 This invention provides a schematic diagram of the structure of an initial auxiliary graphic in a layout.

[0022] Figure 3 This invention provides a schematic diagram of the structure of a correction auxiliary graphic in a layout.

[0023] Figure 4 A schematic diagram of the structure of a correction system provided by the present invention;

[0024] Figure 5 This is a schematic diagram of the structure of a device provided by the present invention. Detailed Implementation

[0025] To make the objectives, technical solutions, and advantages of this invention clearer, the technical solutions in the embodiments of this invention will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some, not all, of the embodiments of this invention. All other embodiments obtained by those skilled in the art based on the embodiments of this invention without inventive effort are within the scope of protection of this invention. Unless otherwise defined, the technical or scientific terms used herein should have the ordinary meaning understood by those skilled in the art. The terms "comprising" and similar expressions used herein mean that the element or object preceding the word covers the element or object listed following the word and its equivalents, but do not exclude other elements or objects.

[0026] Figure 1 This is a flowchart illustrating a method for correcting a mask template layout provided by the present invention. Figure 2 This is a schematic diagram of the structure of an initial auxiliary graphic in a layout provided by the present invention.

[0027] In response to the problems existing in the current technology, such as Figure 1 and Figure 2 As shown, this invention provides a method for correcting a mask layout, used to add auxiliary graphics between main graphics in the layout, including the following steps: S1, obtaining technical node information and process level information of the layout to determine the target main graphic for which auxiliary graphics need to be added on the adjacent side. S2, calculating the distance from the target main graphic to its adjacent main graphic and recording it as an initial distance value. Calculating the width value of the target main graphic. S3, generating initial auxiliary graphics on the adjacent side of the target main graphic based on the width value of the target main graphic and the initial distance value. S4, calculating the distance from the target main graphic to its adjacent graphics and recording it as a corrected distance value. Determining whether the corrected distance value meets the optimization conditions. S5, when the corrected distance value meets the optimization conditions, adjusting the number of auxiliary graphics and / or adjusting the width value of the auxiliary graphics, repeating step S4 until the corrected distance value no longer meets the optimization conditions. S6, performing an overexposure check on the auxiliary graphics. If the overexposure check fails, reducing the width value of the auxiliary graphics during step S5, repeating steps S4-S5 until the overexposure check passes.

[0028] Please refer to Figure 2Specifically, before adding auxiliary graphics, the layout includes 9 main graphics. Each main graphic is a square, and several main graphics are arranged in a 3x3 matrix. Each main graphic in the layout is traversed to determine the target main graphic; the determination of the target main graphic is based on the width of the current main graphic and the distance from the right edge E1 of the current main graphic to the main graphic adjacent to the right edge E1. The initial auxiliary graphics are 3 rectangles arranged in a column, with each initial auxiliary graphic occupying one row of the matrix.

[0029] In other specific embodiments, the target main graphic is determined based on the width of the current main graphic and the distance from the left side E2 of the current main graphic to the main graphic adjacent to the left side E2.

[0030] It is worth noting that both the main graphics and auxiliary graphics can be any planar geometric shape that does not violate the plate-making rules. Several main graphics can be distributed in any form on the plane where the plate is located. In this embodiment, auxiliary graphics are inserted between the main graphics based on the width of the main graphics and the distance between them. The criteria for determining the target main graphics can be the length of the current main graphics and the distance from any side of the current main graphics to the main graphics adjacent to that side.

[0031] It is worth noting that in actual wafer fabrication, the process is unstable. For example, the exposure energy and focus value of the lithography machine fluctuate, making it difficult to control them at a constant and correct value. This can cause dimensional deviations in the exposed pattern, especially for the main pattern with a small process window, which is more easily affected during exposure. The auxiliary pattern described in this embodiment is a sub-resolution auxiliary pattern smaller than the resolution of the lithography machine. It scatters light and assists in the exposure of the main pattern. By making the light-transmitting pattern around the main pattern uniformly distributed, the process window of the main pattern is increased, and the impact of energy disturbances on the size of the exposed pattern is reduced.

[0032] The beneficial effects of the method of this invention are as follows: The method of this application determines the target main graphic that needs to have auxiliary graphics added on the adjacent side by obtaining the technical node information and process level information of the layout. The distance from the target main graphic to its adjacent main graphic is calculated and recorded as an initial distance value. The width value of the target main graphic is calculated. Initial auxiliary graphics are generated on the adjacent side of the target main graphic based on the width value of the target main graphic and the initial distance value. The distance from the target main graphic to its adjacent graphics is calculated and recorded as a corrected distance value. It is determined whether the corrected distance value meets the optimization conditions. When the corrected distance value meets the optimization conditions, the number of auxiliary graphics and the width value of the auxiliary graphics are adjusted, and the above steps are repeated until the corrected distance value no longer meets the optimization conditions. This application can improve the light intensity distribution around the main graphic, obtain a better exposure profile, which is beneficial for increasing the lithography process window, improving product yield, and reducing process risks. Since the main graphic and auxiliary graphics are both located on the same photomask, it can save the material required for manufacturing the photomask and improve the production efficiency of the photomask.

[0033] In some embodiments, step S2 includes calculating the distance from the first side of the target main graphic to its adjacent main graphic and recording it as a first initial distance value. It also includes calculating the distance from the second side of the target main graphic to its adjacent main graphic and recording it as a second initial distance value. Finally, it includes calculating the distance from the first side of the target main graphic to the second side of the target main graphic, which is the width value of the target main graphic. This embodiment obtains the distances from the two sides of the target main graphic to the adjacent main graphics, enabling the acquisition of more detailed information about the distribution of main graphics around the target main graphic, facilitating subsequent graphic optimization.

[0034] Specifically, the first side of the target main graphic is set as its right side E1. The second side of the target main graphic is set as its left side E2. The distance from the right side E1 to the left side E2 is equal to the width W of the target main graphic. The distance from the right side E1 to the adjacent main graphic on the right side of the target main graphic is L11. The distance from the left side E2 to the adjacent main graphic on the left side of the target main graphic is L12.

[0035] In other specific embodiments, the first side of the target main graphic is set as the top side E1 of the target main graphic. The second side of the target main graphic is set as the bottom side E2 of the target main graphic. The distance between the top side E1 and the bottom side E2 is the length W of the target main graphic. The distance from the top side E1 to the adjacent main graphic on the top side of the target main graphic is L11. The distance from the bottom side E2 to the adjacent main graphic on the bottom side of the target main graphic is L12.

[0036] It is worth noting that the first and second sides of the target main graphic can be set as any side of the target main graphic, as long as the first and second sides are opposite sides of each other.

[0037] In some embodiments, step S4 includes calculating the distance from the first side of the target main graphic to its adjacent graphic and recording it as a first corrected distance value. It also includes calculating the distance from the second side of the target main graphic to its adjacent graphic and recording it as a second corrected distance value. This embodiment obtains the distances from the two sides of the target main graphic to adjacent main or auxiliary graphics, enabling the acquisition of more detailed distribution information of the main or auxiliary graphics around the target main graphic, facilitating subsequent graphic optimization.

[0038] Specifically, after the auxiliary graphic is added to the right side of the target main graphic, the first corrected distance value is L21, which is the distance from the right side E1 to the adjacent graphic on the right side of the target main graphic, and L21 is less than L11. The second corrected distance value is L22, which is the distance from the left side E2 to the adjacent graphic on the left side of the target main graphic, and L22 is equal to L12.

[0039] In other specific embodiments, an auxiliary graphic can be added to the left of the target main graphic, and the second corrected distance value is the distance from the left side E2 to the adjacent graphic on the left side of the target main graphic, which is L22, and L22 is less than L12.

[0040] In some embodiments, the optimization condition is set to satisfy:

[0041] Where L21 is the first corrected distance value, L22 is the second corrected distance value, W is the width of the target main graphic, and m is a constant greater than zero. This embodiment provides optimization conditions to filter target main graphics whose distances from two edges to adjacent main or auxiliary graphics satisfy the optimization conditions.

[0042] Specifically, m is set to 8.

[0043] It is worth noting that m can also be any value greater than 0.

[0044] Figure 3 This is a schematic diagram of the structure of a correction auxiliary graphic in the layout provided by the present invention.

[0045] like Figure 2 and Figure 3 As shown, in some embodiments, step S5 includes increasing the quantity of the auxiliary graphics while satisfying the plate-making rules. Alternatively, it may involve increasing the width of the auxiliary graphics while satisfying the plate-making rules. Or, it may involve increasing both the quantity and width of the auxiliary graphics while satisfying the plate-making rules. This embodiment achieves the modification of the auxiliary graphics to a state where optimization is no longer necessary.

[0046] Specifically, as the number of auxiliary graphics increases, the initial 3 auxiliary graphics in 1 column are split into 6 auxiliary graphics in 2 columns.

[0047] In other specific embodiments, based on the plate-making rules, the 2 columns of 6 auxiliary graphics are split into 3 columns of 9 auxiliary graphics.

[0048] In some specific embodiments, based on satisfying the plate-making rules, the initial width of the auxiliary graphic is set to a, and after increasing the width value of the auxiliary graphic, the width of the auxiliary graphic is set to b, where b is greater than a and a is greater than 0.

[0049] In some embodiments, the 2 columns of 6 auxiliary graphics are split into 3 columns of 9 auxiliary graphics. Simultaneously, the width of each auxiliary graphic is adjusted from 'a' to 'b', where 'b' is less than 'a' and 'a' is greater than 0.

[0050] In some embodiments, step S6 includes reducing the width value of the auxiliary graphic while satisfying the plate-making rules. Alternatively, it includes increasing the number of auxiliary graphics and decreasing the width value of the auxiliary graphics while satisfying the plate-making rules. This embodiment achieves further modification of the auxiliary graphics to ensure that the overexposure check of the auxiliary graphics passes.

[0051] Specifically, based on the plate-making rules, the width of the overexposed auxiliary graphic is modified from b to c, where b is greater than c, c is greater than a, and a is greater than 0.

[0052] In other specific embodiments, while satisfying the plate-making rules, the 3 columns of 9 auxiliary graphics are split into 4 columns of 12 auxiliary graphics. The width of the overexposed auxiliary graphics is corrected from b to c, where b is greater than c, c is less than a, and a is greater than 0.

[0053] In some specific embodiments, based on the plate-making rules, the length of the overexposed auxiliary graphic is modified from p to q, where p is greater than q and q is greater than 0.

[0054] It is worth noting that the width of each auxiliary graphic can be different, and the length of each auxiliary graphic can be different.

[0055] In some embodiments, step S6, which involves overexposure checking of the auxiliary pattern, includes overexposure checking of the layout area outside the main pattern, and setting the upper limit of light intensity to A times the optical exposure threshold, where A is any positive number less than 1. This embodiment avoids imaging of the corrected mask auxiliary pattern on the photoresist by setting the upper limit of light intensity.

[0056] Specifically, the data required for training the optical model in step S6 includes: the width W of the target main image, the distance L11 from the right side E1 to the adjacent main image on the right side of the target main image, the distance L12 from the left side E2 to the adjacent main image on the left side of the target main image, and the size of the mask exposure result. A is set to 0.9.

[0057] It is worth noting that the data required to train the optical model in step S6 also includes lithographic conditions and the dimensions of a series of main and auxiliary graphics that can ensure the reliability of the model.

[0058] In some embodiments, step S6 further includes calling the photolithography composite model to perform a process window check on the process fluctuation bandwidth of the current main pattern, and setting the upper limit of the fluctuation bandwidth to be B times the critical size value of the main pattern, where B is any positive number less than 1. This embodiment implements process window checking on the main pattern and sets an upper limit of the fluctuation bandwidth to avoid excessive impact of process fluctuations on the pattern size, so that the process window of the main pattern meets the photolithography requirements.

[0059] Specifically, the photolithography composite model is a model that incorporates the chemical parameters of the photoresist. B is set to 5%.

[0060] In other specific embodiments, when a first type of photoresist is selected to perform the photolithography process, the chemical parameters corresponding to the first type of photoresist are substituted into the optical model of the first type of photoresist to obtain a first photolithography composite model.

[0061] In some specific embodiments, when the type of photoresist selected for the photolithography process is changed from the first type to the second type, the chemical parameters corresponding to the second type of photoresist are substituted into the optical model of the second type of photoresist to obtain the second photolithography composite model.

[0062] Figure 4 This is a schematic diagram of a correction system provided by the present invention.

[0063] like Figure 4As shown, the present invention provides a mask layout correction system for use with any of the methods described in the above embodiments, comprising: a processing unit 32, configured to perform step S1, acquiring technical node information and process level information of the layout to determine a target main graphic for which auxiliary graphics need to be added on adjacent sides. The processing unit is further configured to perform step S2, calculating the distance from the target main graphic to its adjacent main graphic and recording it as an initial distance value. The width value of the target main graphic is calculated. The processing unit is further configured to perform step S3, generating initial auxiliary graphics on the adjacent side of the target main graphic based on the width value of the target main graphic and the initial distance value. The processing unit is further configured to perform step S4, calculating the distance from the target main graphic to its adjacent graphics and recording it as a corrected distance value. It is determined whether the corrected distance value meets optimization conditions. The processing unit is further configured to perform step S5, when the corrected distance value meets optimization conditions, adjusting the number of auxiliary graphics and adjusting the width value of the auxiliary graphics, repeating step S4 until the corrected distance value no longer meets optimization conditions. The processing unit is further configured to perform step S6, calling an optical model to perform an overexposure check on the auxiliary graphics. If the overexposure check fails, the width value of the auxiliary graphic is reduced during step S5, and steps S4-S5 are repeated until the overexposure check passes. Storage unit 31 is used to store the initial distance value, the corrected distance value, the width value of the target main graphic, the number of auxiliary graphics, and the width value of the auxiliary graphics.

[0064] Specifically, the processing unit 32 is configured as a processor. The storage unit 31 is configured as a memory.

[0065] The present invention provides a mask template, which is formed using the method described in any one of the first aspects.

[0066] Figure 5 This is a schematic diagram of the structure of a device provided by the present invention.

[0067] like Figure 5 As shown, the present invention provides a device including a memory 41 and a processor 42, wherein the memory 41 stores a program that can run on the processor 42, and when the program is executed by the processor 42, the device 4 implements the method described in any of the above embodiments.

[0068] Specifically, the device 4 also includes an electron beam direct writing machine 43. After the processor 42 executes the above method to correct the layout, the electron beam direct writing machine 43 uses the corrected layout to create a corrected mask from a blank mask.

[0069] It should be noted that the processor in this embodiment can be an image processing chip with the ability to process image signals. In implementation, each step of the above method embodiment can be completed by integrated logic circuits in the processor's hardware or by instructions in software form. The processor can be a general-purpose processor, a digital signal processor (DSP), an application-specific integrated circuit (ASIC), a field-programmable gate array (FPGA), or other programmable logic devices, discrete gate or transistor logic devices, or discrete hardware components. It can implement or execute the methods disclosed in this embodiment.

[0070] It is understood that the memory in this embodiment can be volatile memory or non-volatile memory, or may include both. The non-volatile memory can be read-only memory (ROM), programmable read-only memory (PROM), erasable programmable read-only memory (EPROM), electrically erasable programmable read-only memory (EEPROM), or flash memory. The volatile memory can be random access memory (RAM), which serves as an external cache. By way of example, but not limitation, many forms of RAM are available, such as Static Random Access Memory (SRAM), Dynamic Random Access Memory (DRAM), Synchronous DRAM (SDRAM), Double Data Rate SDRAM (DDR SDRAM), Enhanced Synchronous DRAM (ESDRAM), Synchlink DRAM (SLDRAM), and Direct Rambus RAM (DR RAM). It should be noted that the memory used in the systems and methods described herein is intended to include, but is not limited to, these and any other suitable types of memory.

[0071] The present invention provides a readable storage medium storing a program, which, when executed, implements the method described in any one of the above embodiments.

[0072] While embodiments of the present invention have been described in detail above, it will be apparent to those skilled in the art that various modifications and variations can be made to these embodiments. However, it should be understood that such modifications and variations fall within the scope and spirit of the invention as set forth in the claims. Furthermore, the invention described herein may have other embodiments and can be implemented or carried out in various ways.

Claims

1. A method for correcting a mask template layout, used to add auxiliary graphics between the main graphics of a mask template layout, characterized in that, Includes the following steps: S1, Obtain the technical node information and process level information of the layout to determine the target main graphic that needs to have auxiliary graphics added on the adjacent side; S2, calculate the distance from the target main graphic to its adjacent main graphics and record it as the initial distance value; Calculate the width value of the target main graphic; S3, generate initial auxiliary graphics on the adjacent side of the target main graphic based on the width value of the target main graphic and the initial distance value; S4, calculate the distance from the first edge of the target main graphic to the adjacent graphic and record it as the first corrected distance value; Calculate the distance from the second edge of the target main graphic to its adjacent graphic and record it as the second corrected distance value; The first edge and the second edge are opposite edges to each other; Determine whether the difference between the first corrected distance value and the second corrected distance value satisfies the optimization condition; S5, when the difference between the first corrected distance value and the second corrected distance value meets the optimization condition, adjust the quantity value of the auxiliary graphic and / or adjust the width value of the auxiliary graphic, and repeat step S4 until the difference between the first corrected distance value and the second corrected distance value no longer meets the optimization condition; S6, invoke the optical model to perform an overexposure check on the auxiliary graphic; if the overexposure check fails, reduce the width value of the auxiliary graphic when executing step S5, and repeat steps S4-S5 until the overexposure check passes.

2. The method according to claim 1, characterized in that, Step S2 includes, Calculate the distance from the first edge of the target main graphic to its adjacent main graphic and record it as the first initial distance value; Calculate the distance from the second side of the target main graphic to its adjacent main graphic and record it as the second initial distance value; Calculate the distance from the first side to the second side of the target main graphic, which is the width value of the target main graphic.

3. The method according to claim 1, characterized in that, The optimization conditions are set to satisfy: Wherein, L21 is the first corrected distance value, L22 is the second corrected distance value, W is the width of the target main graphic, and m is a constant greater than zero.

4. The method according to claim 1, characterized in that, Step S5 includes, While adhering to the plate-making rules, increase the number of auxiliary graphics. Alternatively, while adhering to the plate-making rules, the width of the auxiliary graphic can be increased; Alternatively, while adhering to the plate-making rules, the quantity and width of the auxiliary graphics can be increased.

5. The method according to claim 1, characterized in that, Step S6 includes, While adhering to the plate-making rules, reduce the width value of the auxiliary graphic; Alternatively, while meeting the plate-making rules, the quantity of the auxiliary graphics can be increased and the width of the auxiliary graphics can be decreased.

6. The method according to claim 1, characterized in that, In step S6, the auxiliary image is subjected to an overexposure check, including: Perform overexposure checks on the areas of the layout outside the main graphic, and set the upper limit of light intensity to A times the optical exposure threshold, where A is any positive number less than 1.

7. The method according to claim 1, characterized in that, Step S6 also includes calling the photolithography composite model to perform a process window check on the process fluctuation bandwidth of the current main pattern, and setting the upper limit of the fluctuation bandwidth to be B times the critical dimension value of the main pattern, where B is any positive number less than 1.

8. A mask template layout correction system for use with the method of any one of claims 1 to 7, characterized in that, include: The processing unit is used to execute step S1 to obtain the technical node information and process level information of the layout to determine the target main graphic that needs to have auxiliary graphics added on the adjacent side; The processing unit is also used to perform step S2, calculating the distance from the target main graphic to its adjacent main graphics and recording it as an initial distance value; The processing unit is further configured to execute step S3, generating an initial auxiliary graphic on the adjacent side of the target main graphic based on the width value of the target main graphic and the initial distance value; the processing unit is further configured to execute step S4, calculating the distance from the first side of the target main graphic to the adjacent graphic and recording it as a first corrected distance value. Calculate the distance from the second edge of the target main graphic to its adjacent graphic and record it as the second corrected distance value; The first side and the second side are opposite sides; the difference between the first corrected distance value and the second corrected distance value is determined; the processing unit is further configured to execute step S5, when the difference between the first corrected distance value and the second corrected distance value meets the optimization condition, adjust the quantity value of the auxiliary graphic and / or adjust the width value of the auxiliary graphic, and repeat S4 until the difference between the first corrected distance value and the second corrected distance value no longer meets the optimization condition; the processing unit is further configured to execute step S6, call the optical model, and perform an overexposure check on the auxiliary graphic; when the overexposure check fails, the width value of the auxiliary graphic is reduced when executing step S5, and S4-S5 is repeated until the overexposure check passes; The storage unit is used to store the initial distance value, the difference between the first corrected distance value and the second corrected distance value, the width value of the target main graphic, the number of auxiliary graphics, and the width value of the auxiliary graphics.

9. A photomask, characterized in that, The mask template is formed using the method described in any one of claims 1 to 7.

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