Connection structure and its manufacturing method

Abstract

This application proposes a method for fabricating a connection structure with signal conduction, comprising the following steps: providing a copper-clad substrate having a first through-hole; electroplating the inner wall of the first through-hole to form a ground layer; filling the first through-hole with a first material to form a first filling layer, with the two opposing surfaces of the first filling layer flush with the first copper plating layer and the second copper plating layer, respectively; forming a second through-hole in the first filling layer, with the second through-hole coaxially arranged with the first through-hole; electroplating the inner wall of the second through-hole to form a signal transmission layer; and connecting a first component to be connected and a second component to be connected to the signal transmission layer, thereby obtaining the connection structure. The connection structure fabricated by this application has high impedance matching and low risk of signal leakage. This application also provides a connection structure prepared by the above method.

Description

Technical Field

[0001] This application relates to the field of signal transmission technology, and in particular to a connection structure with signal conduction and its manufacturing method. Background Technology

[0002] A connector is an electronic device used to connect and secure two components, enabling signal transmission between them. However, the impedance of the signal transmission line in a traditional connector is prone to variation and has poor impedance continuity, reducing the impedance matching between the connector and the two components. Furthermore, there is a risk of signal leakage during signal transmission between the two components through the connector. Summary of the Invention

[0003] In view of this, this application provides a method for manufacturing a connection structure with high impedance matching and low risk of signal leakage.

[0004] Additionally, it is necessary to provide a connection structure manufactured using the above-described method.

[0005] One embodiment of this application provides a method for manufacturing a connection structure with signal conduction, including the following steps:

[0006] A copper-clad substrate is provided, the copper-clad substrate including a first insulating layer and a first copper foil layer and a second copper foil layer respectively disposed on two opposite surfaces of the first insulating layer, and the copper-clad substrate having a first through hole;

[0007] Electroplating is performed on the inner walls of the first copper foil layer, the second copper foil layer, and the first through hole to form a first copper plating layer, a second copper plating layer, and a grounding layer, respectively.

[0008] A first material is filled into the first through hole to form a first filling layer, and the two opposite surfaces of the first filling layer are respectively flush with the first copper plating layer and the second copper plating layer.

[0009] A second insulating layer and a third copper foil layer are sequentially formed on the first copper plating layer, and a third insulating layer and a fourth copper foil layer are sequentially formed on the second copper plating layer to obtain a circuit board.

[0010] A second through hole is formed in the circuit board, wherein the second through hole penetrates the first filling layer and is coaxially arranged with the first through hole;

[0011] Electroplating is performed on the inner walls of the third copper foil layer, the fourth copper foil layer, and the second through hole to form a third copper plating layer, a fourth copper plating layer, and a signal transmission layer, respectively.

[0012] The second material is filled into the second through hole to form a second filling layer, thus obtaining an intermediate body;

[0013] A first groove and a second groove are formed in the intermediate body. The first groove passes through the third copper plating layer, the third copper foil layer and the second insulating layer in sequence, and the bottom of the first groove corresponds to the signal transmission layer and the second filling layer. The second groove passes through the fourth copper plating layer, the fourth copper foil layer and the third insulating layer in sequence, and the bottom of the second groove corresponds to the signal transmission layer and the second filling layer.

[0014] A first transfer pad and a second transfer pad are formed on the bottom of the first groove and the bottom of the second groove, respectively; and

[0015] The first component to be connected and the second component to be connected are respectively connected to the first transmission pad and the second transmission pad to obtain the connection structure.

[0016] An embodiment of this application also provides a connection structure with signal conduction, including:

[0017] A copper-clad substrate, the copper-clad substrate comprising a first insulating layer and a first copper foil layer and a second copper foil layer respectively disposed on two opposite surfaces of the first insulating layer, the copper-clad substrate having a first through hole;

[0018] The first copper plating layer, the second copper plating layer, and the grounding layer are respectively located on the inner walls of the first copper foil layer, the second copper foil layer, and the first through hole;

[0019] A first filling layer is located in the first through hole, and the two opposite surfaces of the first filling layer are flush with the first copper plating layer and the second copper plating layer, respectively. A second through hole is formed in the first filling layer, and the second through hole is coaxially arranged with the first through hole.

[0020] The second insulating layer and the third copper foil layer are sequentially located on the first copper plating layer;

[0021] The third insulating layer and the fourth copper foil layer are sequentially located on the second copper plating layer;

[0022] The third copper plating layer, the fourth copper plating layer, and the signal transmission layer are respectively located on the inner walls of the third copper foil layer, the fourth copper foil layer, and the second through hole;

[0023] The second filling layer is located in the second through-hole;

[0024] The connection structure includes a first groove and a second groove. The first groove sequentially penetrates the third copper plating layer, the third copper foil layer, and the second insulating layer, with its bottom corresponding to the signal transmission layer and the second filling layer. The second groove sequentially penetrates the fourth copper plating layer, the fourth copper foil layer, and the third insulating layer, with its bottom corresponding to the signal transmission layer and the second filling layer. A first transmission pad and a second transmission pad are respectively provided on the bottom of the first groove and the bottom of the second groove.

[0025] The first component to be connected and the second component to be connected are respectively connected to the first transmission pad and the second transmission pad.

[0026] This application forms a ground layer on the inner wall of the first through-hole and a signal transmission layer on the inner wall of the second through-hole. The lengths of the signal transmission layer and the ground layer are equal along the thickness of the first insulating layer, ensuring that the signal transmission layer is in the same environment. This prevents changes in the impedance value of the signal transmission layer and guarantees the continuity of its impedance, thereby improving the impedance matching between the signal transmission layer and both the first and second components to be connected. Furthermore, by "wrapping" the signal transmission layer with the ground layer and ensuring that the lengths of the signal transmission layer and the ground layer are equal, this application increases the isolation of the signal transmission layer from the outside environment, reduces signal leakage during transmission, and lowers transmission loss. Attached Figure Description

[0027] Figure 1 This is a schematic diagram of the structure of a copper-clad substrate provided in an embodiment of this application.

[0028] Figure 2 Is Figure 1 The diagram shows the structure of the copper-clad substrate after the first through-hole is opened.

[0029] Figure 3 Is Figure 2 The diagram shows the structure after the first copper foil layer, the second copper foil layer, and the grounding layer are formed on the inner wall of the first through hole, respectively.

[0030] Figure 4 Is Figure 3 The diagram shows the structure after the first filling layer is formed in the first through hole.

[0031] Figure 5 Is Figure 4 The diagram shows the structure after the second insulating layer and the third copper foil layer are formed sequentially on the first copper plating layer, and the third insulating layer and the fourth copper foil layer are formed sequentially on the second copper plating layer.

[0032] Figure 6 Is Figure 5 The diagram shows the structure of the circuit board after the second through hole is opened.

[0033] Figure 7 Is Figure 6 The diagram shows the structure after the third copper foil layer, the fourth copper foil layer, and the signal transmission layer are formed on the inner walls of the second through hole, respectively.

[0034] Figure 8 Is Figure 7 The diagram shows the structure after the second filling layer is formed in the second through hole.

[0035] Figure 9 Is Figure 8 The diagram shows the structure after the first and second grooves are opened in the intermediate body.

[0036] Figure 10 Is Figure 9 The diagram shows the structure after a first metal layer is formed on the inner wall and bottom of the first groove, and a second metal layer is formed on the inner wall and bottom of the second groove.

[0037] Figure 11 It is Figure 10 The diagram shows the structure of the first metal layer and the second metal layer after etching.

[0038] Figure 12 Is Figure 11 The diagram shows the structural schematic of the connection structure obtained after connecting the first and second components to be connected to the first and second connecting pads, respectively.

[0039] Explanation of main component symbols

[0040] Connection structure 100

[0041] Copper clad substrate 10

[0042] First insulating layer 101

[0043] First copper foil layer 102

[0044] Second copper foil layer 103

[0045] First through hole 11

[0046] Grounding layer 22

[0047] First copper plating layer 20

[0048] Second copper plating layer 21

[0049] First filling layer 30

[0050] Second insulating layer 40

[0051] Third insulating layer 41

[0052] Third copper foil layer 50

[0053] Fourth copper foil layer 51

[0054] Circuit board 52

[0055] Second through hole 521

[0056] Third copper plating layer 60

[0057] Fourth copper plating layer 61

[0058] Signal transmission layer 62

[0059] Second filler layer 70

[0060] Intermediate 71

[0061] First groove 711

[0062] Second groove 712

[0063] First metal layer 72

[0064] Second metal layer 73

[0065] First transmission pad 74

[0066] Second transmission pad 75

[0067] First Tin Ball 76

[0068] Second Tin Ball 77

[0069] First component to be connected 80

[0070] First circuit board 801

[0071] First solder pad 802

[0072] First protective layer 803

[0073] First opening 8031

[0074] Second component to be connected 90

[0075] Second circuit board 901

[0076] Second solder pad 902

[0077] Second protective layer 903

[0078] Second opening 9031

[0079] The following detailed description, in conjunction with the accompanying drawings, will further illustrate this application. Detailed Implementation

[0080] The technical solutions in the embodiments of this application will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some embodiments of this application, and not all embodiments.

[0081] Unless otherwise defined, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this application belongs. The terminology used herein is for the purpose of describing particular embodiments only and is not intended to be limiting of the application.

[0082] To further illustrate the technical means and effects adopted by this application in achieving its intended purpose, the following detailed description of this application is provided in conjunction with the accompanying drawings and preferred embodiments.

[0083] One embodiment of this application provides a method for manufacturing a connection structure with signal conduction, including the following steps:

[0084] Step S11, please refer to Figure 1 A copper-clad substrate 10 is provided.

[0085] In one embodiment, the copper-clad substrate 10 includes a first insulating layer 101 and a first copper foil layer 102 and a second copper foil layer 103 respectively disposed on opposite surfaces of the first insulating layer 101.

[0086] The material of the first insulating layer 101 can be selected from resins such as epoxy resin, polypropylene (PP), BT resin, polyphenylene oxyether (PPO), polyimide (PI), liquid crystal polymer (LCP), polyethylene terephthalate (PET), and polyethylene naphthalate (PEN). In this embodiment, the material of the first insulating layer 101 is polyimide.

[0087] Step S12, please refer to Figure 2 A first through hole 11 is formed in the copper-clad substrate 10.

[0088] The first through hole 11 sequentially penetrates the first copper foil layer 102, the first insulating layer 101, and the second copper foil layer 103.

[0089] In one embodiment, the first through hole 11 can be formed by laser drilling.

[0090] Step S13, please refer to Figure 3 Electroplating is performed on the inner walls of the first copper foil layer 102, the second copper foil layer 103, and the first through hole 11 to form a first copper plating layer 20, a second copper plating layer 21, and a grounding layer 22, respectively.

[0091] Step S14, please refer to Figure 4 A first material is filled into the first through hole 11 having the ground layer 22 to form a first filling layer 30, and the two opposing surfaces of the first filling layer 30 are flush with the first copper plating layer 20 and the second copper plating layer 21, respectively.

[0092] Specifically, after filling the first material into the first through hole 11, the material is ground so that the two opposing surfaces of the first filling layer 30 are flush with the first copper plating layer 20 and the second copper plating layer 21, respectively.

[0093] The first material is an insulating material. That is, the first filler layer 30 is made of an insulating material. Specifically, the insulating material can be polyethylene.

[0094] Step S15, please refer to Figure 5 A second insulating layer 40 and a third copper foil layer 50 are sequentially formed on the first copper plating layer 20, and a third insulating layer 41 and a fourth copper foil layer 51 are sequentially formed on the second copper plating layer 21 to obtain a circuit board 52.

[0095] In this embodiment, the materials of the second insulating layer 40 and the third insulating layer 41 can be the same as the material of the first insulating layer 101. For details, please refer to the material of the first insulating layer 101, which will not be described in detail here.

[0096] Step S16, please refer to Figure 6 A second through hole 521 is formed in the circuit board 52.

[0097] The second through hole 521 is coaxially arranged with the first through hole 11. In this embodiment, the second through hole 521 sequentially penetrates the third copper foil layer 50, the second insulating layer 40, the first filling layer 30, the third insulating layer 41, and the fourth copper foil layer 51.

[0098] The inner diameter of the second through hole 521 is smaller than the inner diameter of the first through hole 11.

[0099] In one embodiment, the second through hole 521 can be formed by laser drilling.

[0100] Step S17, please refer to Figure 7 Electroplating is performed on the inner walls of the third copper foil layer 50, the fourth copper foil layer 51, and the second through hole 521 to form a third copper plating layer 60, a fourth copper plating layer 61, and a signal transmission layer 62, respectively.

[0101] Step S18, please refer to Figure 8 A second material is filled into the second through-hole 521 having the signal transmission layer 62 to form a second filling layer 70, thereby obtaining an intermediate 71.

[0102] Specifically, after filling the second material into the second through hole 521, the material is ground so that the two opposing surfaces of the second filling layer 70 are flush with the third copper plating layer 60 and the fourth copper plating layer 61, respectively.

[0103] The second material is either an insulating material or a conductive material. That is, the material of the second filler layer 70 is either an insulating material or a conductive material.

[0104] Step S19, please refer to Figure 9 A first groove 711 and a second groove 712 are formed in the intermediate body 71.

[0105] In this embodiment, the first groove 711 sequentially penetrates the third copper plating layer 60, the third copper foil layer 50, and the second insulating layer 40, and the bottom of the first groove 711 corresponds to the first filling layer 30, the signal transmission layer 62, and the second filling layer 70. The second groove 712 sequentially penetrates the fourth copper plating layer 61, the fourth copper foil layer 51, and the third insulating layer 41, and the bottom of the second groove 712 corresponds to the signal transmission layer 62 and the second filling layer 70. Specifically, the bottom of the first groove 711 is flush with the surface of the first copper plating layer 20 away from the first copper foil layer 102, and the bottom of the second groove 712 is flush with the surface of the second copper plating layer 21 away from the second copper foil layer 103. Figure 9 As shown, one end of the signal transmission layer 62 is exposed to the first groove 711, and the other end of the signal transmission layer 62 is exposed to the second groove 712.

[0106] It is understood that the signal transmission layer 62 and the ground layer 22 are of equal length along the direction of the thickness of the first insulating layer 101.

[0107] In one embodiment, both the first groove 711 and the second groove 712 can be formed by controlled-depth drilling.

[0108] Step S20, please refer to Figure 10Electroplating is performed on the inner wall and bottom of the first groove 711 to form a first metal layer 72, and electroplating is performed on the inner wall and bottom of the second groove 712 to form a second metal layer 73.

[0109] Step S21, please refer to Figure 11 The first metal layer 72 is etched to form the first transfer pad 74, and the second metal layer 73 is etched to form the second transfer pad 75.

[0110] Specifically, the first metal layer 72 on the inner wall of the first groove 711 and the first metal layer 72 on a portion of the bottom of the first groove 711 are etched to form the first transfer pad 74, and the second metal layer 73 on the inner wall of the second groove 712 and the second metal layer 73 on a portion of the bottom of the second groove 712 are etched to form the second transfer pad 75.

[0111] The first transmission pad 74 and the second transmission pad 75 are located at the bottom of the first groove 711 and the second groove 712, respectively, and both the first transmission pad 74 and the second transmission pad 75 are electrically connected to the signal transmission layer 62.

[0112] Step S22, please refer to Figure 12 A first component 80 and a second component 90 are provided, and the first component 80 is electrically connected to the first transfer pad 74 via a first solder ball 76, and the second component 90 is electrically connected to the second transfer pad 75 via a second solder ball 77, thereby obtaining the connection structure 100.

[0113] In this process, the first component to be connected 80 transmits the signal sequentially through the first transmission pad 74, the signal transmission layer 62, and the second transmission pad 75 to the second component to be connected 90, thereby realizing the internal transmission of the signal in the connection structure 100.

[0114] When connecting the first component to be connected 80 and the second component to be connected 90, the first groove 711 and the second groove 712 respectively increase the implantation space of the first solder ball 76 and the second solder ball 77, avoiding adverse phenomena such as flattening and overflow of the first solder ball 76 and the second solder ball 77.

[0115] In one embodiment, the first component to be connected 80 may be a circuit board, a chip, or an electronic component. In this embodiment, the first component to be connected 80 is a circuit board. Specifically, the first component to be connected 80 includes a first circuit board 801, a first solder pad 802, and a first protective layer 803. The first solder pad 802 and the first protective layer 803 are both disposed on the first circuit board 801. The first protective layer 803 has a first opening 8031, and the first solder pad 802 is also disposed in the first opening 8031. The first solder pad 802 is electrically connected to the first transmission pad 74 through the first solder ball 76, thereby electrically connecting the first component to be connected 80 to the first transmission pad 74. The signal transmission layer 62 is electrically connected to the first circuit board 801 through the first solder ball 76 and the first solder pad 802. The first circuit board 801 may be a single-layer circuit board or a multi-layer circuit board.

[0116] In one embodiment, the second component to be connected 90 may be a circuit board, a chip, or an electronic component. In this embodiment, the second component to be connected 90 is a circuit board. Specifically, the second component to be connected 90 includes a second circuit board 901, a second solder pad 902, and a second protective layer 903. The second solder pad 902 and the second protective layer 903 are both disposed on the second circuit board 901. The second protective layer 903 has a second opening 9031, and the second solder pad 902 is also disposed in the second opening 9031. The second solder pad 902 is electrically connected to the second transmission pad 75 through the second solder ball 77, thereby electrically connecting the second component to be connected 90 to the second transmission pad 75. The signal transmission layer 62 is electrically connected to the second circuit board 901 through the second solder ball 77 and the second solder pad 902. The second circuit board 901 may be a single-layer circuit board or a multi-layer circuit board.

[0117] Please see Figure 12 An embodiment of this application also provides a connection structure 100 with signal conduction, the connection structure 100 including a copper-clad substrate 10, a first copper plating layer 20, a second copper plating layer 21, a ground layer 22, a first filling layer 30, a second insulating layer 40, a third copper foil layer 50, a third insulating layer 41, a fourth copper foil layer 51, a third copper plating layer 60, a fourth copper plating layer 61, a signal transmission layer 62, a second filling layer 70, a first component to be connected 80, and a second component to be connected 90.

[0118] In one embodiment, the copper-clad substrate 10 includes a first insulating layer 101 and a first copper foil layer 102 and a second copper foil layer 103 respectively disposed on opposite surfaces of the first insulating layer 101.

[0119] The material of the first insulating layer 101 can be selected from resins such as epoxy resin, polypropylene (PP), BT resin, polyphenylene oxyether (PPO), polyimide (PI), liquid crystal polymer (LCP), polyethylene terephthalate (PET), and polyethylene naphthalate (PEN). In this embodiment, the material of the first insulating layer 101 is polyimide.

[0120] The copper-clad substrate 10 has a first through hole 11. The first through hole 11 passes through the first copper foil layer 102, the first insulating layer 101 and the second copper foil layer 103 in sequence.

[0121] The first copper plating layer 20, the second copper plating layer 21 and the grounding layer 22 are respectively located on the inner walls of the first copper foil layer 102, the second copper foil layer 103 and the first through hole 11.

[0122] The first filling layer 30 is located in the first through-hole 11 having the grounding layer 22, and the two opposing surfaces of the first filling layer 30 are flush with the first copper plating layer 20 and the second copper plating layer 21, respectively. The first filling layer 30 is made of an insulating material. Specifically, the insulating material may be polyethylene.

[0123] A second through hole 521 is formed in the first filling layer 30. The second through hole 521 is coaxially arranged with the first through hole 11. The inner diameter of the second through hole 521 is smaller than the inner diameter of the first through hole 11.

[0124] The second insulating layer 40 and the third copper foil layer 50 are sequentially located on the first copper plating layer 20, and the third insulating layer 41 and the fourth copper foil layer 51 are sequentially located on the second copper plating layer 21. In this embodiment, the materials of the second insulating layer 40 and the third insulating layer 41 can be the same as the material of the first insulating layer 101. For details, please refer to the material of the first insulating layer 101, which will not be described in detail here.

[0125] The third copper plating layer 60, the fourth copper plating layer 61, and the signal transmission layer 62 are respectively located on the inner walls of the third copper foil layer 50, the fourth copper foil layer 51, and the second through hole 521.

[0126] The second filling layer 70 is located in the second through-hole 521 having the signal transmission layer 62. The second filling layer 70 is made of an insulating material or a conductive material. That is, the material of the second filling layer 70 is an insulating material or a conductive material.

[0127] The connection structure 100 has a first groove 711 and a second groove 712. In this embodiment, the first groove 711 sequentially penetrates the third copper plating layer 60, the third copper foil layer 50, and the second insulating layer 40, and the bottom of the first groove 711 corresponds to the first filling layer 30, the signal transmission layer 62, and the second filling layer 70. The second groove 712 sequentially penetrates the fourth copper plating layer 61, the fourth copper foil layer 51, and the third insulating layer 41, and the bottom of the second groove 712 corresponds to the signal transmission layer 62 and the second filling layer 70. Specifically, the bottom of the first groove 711 is flush with the surface of the first copper plating layer 20 away from the first copper foil layer 102, and the bottom of the second groove 712 is flush with the surface of the second copper plating layer 21 away from the second copper foil layer 103. Figure 9 As shown, one end of the signal transmission layer 62 is exposed to the first groove 711, and the other end of the signal transmission layer 62 is exposed to the second groove 712.

[0128] It is understood that the signal transmission layer 62 and the ground layer 22 are of equal length along the direction of the thickness of the first insulating layer 101.

[0129] The bottom of the first groove 711 and the bottom of the second groove 712 are respectively provided with a first transmission pad 74 and a second transmission pad 75, and both the first transmission pad 74 and the second transmission pad 75 are electrically connected to the signal transmission layer 62.

[0130] The first component to be connected 80 is electrically connected to the first transfer pad 74 via the first solder ball 76, and the second component to be connected 90 is electrically connected to the second transfer pad 75 via the second solder ball 77.

[0131] In this process, the first component to be connected 80 transmits the signal sequentially through the first transmission pad 74, the signal transmission layer 62, and the second transmission pad 75 to the second component to be connected 90, thereby realizing the internal transmission of the signal in the connection structure 100.

[0132] When connecting the first component to be connected 80 and the second component to be connected 90, the first groove 711 and the second groove 712 respectively increase the implantation space of the first solder ball 76 and the second solder ball 77, avoiding adverse phenomena such as flattening and overflow of the first solder ball 76 and the second solder ball 77.

[0133] In one embodiment, the first component to be connected 80 may be a circuit board, a chip, or an electronic component. In this embodiment, the first component to be connected 80 is a circuit board. Specifically, the first component to be connected 80 includes a first circuit board 801, a first solder pad 802, and a first protective layer 803. The first solder pad 802 and the first protective layer 803 are both disposed on the first circuit board 801. The first protective layer 803 has a first opening 8031, and the first solder pad 802 is also disposed in the first opening 8031. The first solder pad 802 is electrically connected to the first transmission pad 74 through the first solder ball 76, thereby electrically connecting the first component to be connected 80 to the first transmission pad 74. The signal transmission layer 62 is electrically connected to the first circuit board 801 through the first solder ball 76 and the first solder pad 802. The first circuit board 801 may be a single-layer circuit board or a multi-layer circuit board.

[0134] In one embodiment, the second component to be connected 90 may be a circuit board, a chip, or an electronic component. In this embodiment, the second component to be connected 90 is a circuit board. Specifically, the second component to be connected 90 includes a second circuit board 901, a second solder pad 902, and a second protective layer 903. The second solder pad 902 and the second protective layer 903 are both disposed on the second circuit board 901. The second protective layer 903 has a second opening 9031, and the second solder pad 902 is also disposed in the second opening 9031. The second solder pad 902 is electrically connected to the second transmission pad 75 through the second solder ball 77, thereby electrically connecting the second component to be connected 90 to the second transmission pad 75. The signal transmission layer 62 is electrically connected to the second circuit board 901 through the second solder ball 77 and the second solder pad 902. The second circuit board 901 may be a single-layer circuit board or a multi-layer circuit board.

[0135] This application forms a grounding layer 22 on the inner wall of the first through-hole 11 and a signal transmission layer 62 on the inner wall of the second through-hole 521. The lengths of the signal transmission layer 62 and the grounding layer 22 are equal along the thickness of the first insulating layer 101, ensuring that the signal transmission layer 62 is in the same environment. This prevents changes in the impedance value of the signal transmission layer 62 and guarantees the continuity of its impedance, thereby improving the impedance matching between the signal transmission layer 62 and the first and second components to be connected, 80 and 90. Furthermore, this application "wraps" the signal transmission layer 62 with the grounding layer 22, and makes the lengths of the signal transmission layer 62 and the grounding layer 22 equal, increasing the isolation of the signal transmission layer 62 from the outside world, reducing signal leakage during transmission, and lowering transmission loss.

[0136] The above description is merely an optimized implementation of this application, but in actual applications, it should not be limited to this implementation.

Claims

1. A method for manufacturing a connection structure with signal conduction, characterized in that, Includes the following steps: A copper-clad substrate is provided, the copper-clad substrate including a first insulating layer and a first copper foil layer and a second copper foil layer respectively disposed on two opposite surfaces of the first insulating layer, and the copper-clad substrate having a first through hole; Electroplating is performed on the inner walls of the first copper foil layer, the second copper foil layer, and the first through hole to form a first copper plating layer, a second copper plating layer, and a grounding layer, respectively. A first material is filled into the first through hole to form a first filling layer, and the two opposite surfaces of the first filling layer are respectively flush with the first copper plating layer and the second copper plating layer. A second insulating layer and a third copper foil layer are sequentially formed on the first copper plating layer, and a third insulating layer and a fourth copper foil layer are sequentially formed on the second copper plating layer to obtain a circuit board. A second through hole is formed in the circuit board, wherein the second through hole penetrates the first filling layer and is coaxially arranged with the first through hole; Electroplating is performed on the inner walls of the third copper foil layer, the fourth copper foil layer, and the second through hole to form a third copper plating layer, a fourth copper plating layer, and a signal transmission layer, respectively. The second material is filled into the second through hole to form a second filling layer, thus obtaining an intermediate body; A first groove and a second groove are formed in the intermediate body. The first groove passes through the third copper plating layer, the third copper foil layer and the second insulating layer in sequence, and the bottom of the first groove corresponds to the signal transmission layer and the second filling layer. The second groove passes through the fourth copper plating layer, the fourth copper foil layer and the third insulating layer in sequence, and the bottom of the second groove corresponds to the signal transmission layer and the second filling layer. A first transfer pad and a second transfer pad are formed on the bottom of the first groove and the bottom of the second groove, respectively; and The first component to be connected and the second component to be connected are respectively connected to the first transmission pad and the second transmission pad to obtain the connection structure.

2. The method for manufacturing the connection structure as described in claim 1, characterized in that, The steps of connecting the first component to be connected and the second component to be connected to the first transfer pad and the second transfer pad respectively include: A first solder ball is formed on the first transfer pad; and A second solder ball is formed on the second transfer pad; The first component to be connected is connected to the first transfer pad via the first solder ball, and the second component to be connected is connected to the second transfer pad via the second solder ball.

3. The method for manufacturing the connection structure as described in claim 1, characterized in that, The first component to be connected is a circuit board, a chip, or an electronic component, and the second component to be connected is a circuit board, a chip, or an electronic component.

4. The method for manufacturing the connection structure as described in claim 1, characterized in that, The steps of forming a first transfer pad and a second transfer pad on the bottom of the first groove and the bottom of the second groove, respectively, include: Electroplating is performed on the inner wall and bottom of the first groove to form a first metal layer; Electroplating is performed on the inner wall and bottom of the second groove to form a second metal layer; Etching the first metal layer to form the first transport pad; and The second metal layer is etched to form the second transport pad.

5. The method for manufacturing the connection structure as described in claim 1, characterized in that, The first material is an insulating material, and the second material is either an insulating material or a conductive material.

6. A connection structure with signal conduction capability, characterized in that, include: A copper-clad substrate, the copper-clad substrate comprising a first insulating layer and a first copper foil layer and a second copper foil layer respectively disposed on two opposite surfaces of the first insulating layer, the copper-clad substrate having a first through hole; The first copper plating layer, the second copper plating layer, and the grounding layer are respectively located on the inner walls of the first copper foil layer, the second copper foil layer, and the first through hole; A first filling layer is located in the first through hole, and the two opposite surfaces of the first filling layer are flush with the first copper plating layer and the second copper plating layer, respectively. A second through hole is formed in the first filling layer, and the second through hole is coaxially arranged with the first through hole. The second insulating layer and the third copper foil layer are sequentially located on the first copper plating layer; The third insulating layer and the fourth copper foil layer are sequentially located on the second copper plating layer; The third copper plating layer, the fourth copper plating layer, and the signal transmission layer are respectively located on the inner walls of the third copper foil layer, the fourth copper foil layer, and the second through hole; The second filling layer is located in the second through-hole; The connection structure includes a first groove and a second groove. The first groove sequentially penetrates the third copper plating layer, the third copper foil layer, and the second insulating layer, with its bottom corresponding to the signal transmission layer and the second filling layer. The second groove sequentially penetrates the fourth copper plating layer, the fourth copper foil layer, and the third insulating layer, with its bottom corresponding to the signal transmission layer and the second filling layer. A first transmission pad and a second transmission pad are respectively provided on the bottom of the first groove and the bottom of the second groove. The first component to be connected and the second component to be connected are respectively connected to the first transmission pad and the second transmission pad.

7. The connection structure as described in claim 6, characterized in that, Also includes: The first solder ball is located on the first transfer pad; as well as The second solder ball is located on the second transfer pad; The first solder ball is used to connect the first component to be connected to the first transfer pad, and the second solder ball is used to connect the second component to be connected to the second transfer pad.

8. The connection structure as described in claim 7, characterized in that, The first component to be connected includes a first circuit board, a first solder pad, and a first protective layer. The first solder pad and the first protective layer are both disposed on the first circuit board. The first protective layer has a first opening, and the first solder pad is also disposed in the first opening. The first solder pad is electrically connected to the first transfer pad through the first solder ball.

9. The connection structure as described in claim 6, characterized in that, The first component to be connected is a circuit board, a chip, or an electronic component, and the second component to be connected is a circuit board, a chip, or an electronic component.

10. The connection structure as described in claim 6, characterized in that, The first filling layer is made of insulating material, and the second filling layer is made of insulating material or conductive material.

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