Apparatus for processing a substrate and method for processing a substrate

Abstract

The present invention relates to an apparatus for processing a substrate and a method for processing a substrate. The inventive concept provides a mask processing apparatus. The mask processing apparatus includes a support unit configured to support and rotate a mask having a first pattern within a plurality of cells thereof and a second pattern outside an area of the plurality of cells; and a heating unit having a laser irradiator for irradiating a laser to a specific area of the mask supported on the support unit; and a controller configured to control the support unit and the heating unit, and wherein the support unit includes a support portion for supporting the mask and a moving stage portion configured to move a position of the support portion, and wherein the controller controls the moving stage portion to thereby change a position of the mask supported on the support portion such that the second pattern is positioned at the specific area.

Description

[0001] Cross-references to related applications

[0002] This application claims priority and benefit to Korean Patent Application No. 10-2021-0116913, filed with the Korean Intellectual Property Office on September 2, 2021, the entire contents of which are incorporated herein by reference. Technical Field

[0003] The embodiments of the inventive concept described herein relate to a substrate processing apparatus and a substrate processing method, and more specifically to a substrate processing apparatus and a substrate processing method for processing a substrate by heating a substrate. Background Technology

[0004] To manufacture semiconductor devices, various processes are performed on substrates such as wafers, including photolithography, etching, ashing, ion implantation, and thin film deposition. Various processing solutions and gases are used in each process. Additionally, a drying process is performed on the substrate to remove the processing solutions used to process the substrate.

[0005] Photolithography processes used to form patterns on wafers include exposure processes. Exposure processes are pre-performed operations used to cut semiconductor integrated material attached to a wafer into desired patterns. Exposure processes can have various purposes, such as forming patterns for etching and forming patterns for ion implantation. In an exposure process, a mask (a "frame") is used to draw a pattern onto the wafer using light. When light is exposed to the semiconductor integrated material on the wafer (e.g., photoresist on the wafer), the chemical properties of the photoresist change according to the pattern formed by the light and the mask. When a developer is supplied to the photoresist (whose chemical properties have changed according to the pattern), the pattern is formed on the wafer.

[0006] To perform the exposure process accurately, the pattern formed on the mask must be precisely fabricated. To confirm that the pattern is formed accurately in the desired form, the operator uses inspection equipment such as a scanning electron microscope (SEM) to examine the formed pattern. However, a large number of patterns are formed on a single mask. That is, inspecting one mask requires a significant amount of time to examine all the numerous patterns.

[0007] Accordingly, a monitoring pattern representing a group of patterns comprising multiple patterns can be formed on the mask. Furthermore, anchor patterns representing multiple groups of patterns can be formed on the mask. An operator can estimate the quality of the pattern formed on the mask by inspecting the anchor patterns. Additionally, an operator can estimate the quality of patterns included in a pattern group by inspecting the monitoring patterns.

[0008] As described above, the monitoring and anchoring patterns formed on the mask allow operators to effectively reduce the time required for mask inspection. However, to improve the accuracy of mask inspection, it is preferable that the monitoring and anchoring patterns have the same critical dimension.

[0009] When etching is performed to make the critical dimensions of the monitoring pattern and the anchor pattern equal, over-etching may occur at the patterns. For example, the difference between the etching rate of the critical dimension of the monitoring pattern and the etching rate of the anchor pattern may occur several times, and over-etching may occur at the critical dimensions of the monitoring pattern and the anchor pattern during repeated etching processes to reduce the difference. When the etching process is performed precisely to minimize the occurrence of such over-etching, the etching process takes a significant amount of time. Accordingly, an additional critical dimension calibration process is performed to precisely calibrate the critical dimensions of the patterns formed on the mask.

[0010] Figure 1 This paper demonstrates the normal distribution of the first critical dimension CDP1 and the second critical dimension CDP2 (the critical dimension of the anchor pattern) of the mask monitoring pattern before performing a critical dimension correction process during mask manufacturing. Furthermore, the sizes of the first critical dimension CDP1 and the second critical dimension CDP2 are smaller than the target critical dimension. Before performing the critical dimension correction process, there is an intentional deviation between the critical dimension of the monitoring pattern and the critical dimension (CD) of the anchor pattern. The critical dimensions of both patterns are made the same by additionally etching the anchor pattern during the critical dimension correction process. During the over-etching of the anchor pattern, if the anchor pattern is over-etched compared to the monitoring pattern, the critical dimensions of the monitoring pattern and the anchor pattern will differ, potentially making it impossible to accurately correct the critical dimension of the pattern formed at the mask. When additionally etching the anchor pattern, precise etching of the anchor pattern should accompany the process. Summary of the Invention

[0011] The present invention provides a substrate processing apparatus and a substrate processing method for effectively processing substrates.

[0012] The present invention provides a substrate processing apparatus and a substrate processing method for making the critical dimensions of patterns formed on a substrate uniform.

[0013] The present invention provides a substrate processing apparatus and a substrate processing method for performing precise etching of a specific pattern formed on a substrate.

[0014] The technical objectives of this invention are not limited to those described above, and other unmentioned technical objectives will become apparent to those skilled in the art from the following description.

[0015] The present invention provides a mask processing apparatus. The mask processing apparatus includes: a support unit configured to support and rotate a mask having a first pattern within a plurality of its units and a second pattern outside the area of ​​the plurality of units; a heating unit having a laser irradiator for irradiating a specific area of ​​the mask supported on the support unit; and a controller configured to control the support unit and the heating unit, wherein the support unit includes: a support portion for supporting the mask; and a moving stage portion configured to move the position of the support portion, wherein the controller controls the moving stage portion to change the position of the mask supported on the support portion, such that the second pattern is positioned at the specific area.

[0016] In one embodiment, the support unit further includes a rotating part configured to rotate the moving stage, wherein the controller controls the rotating part such that the mask stops rotating when the laser irradiator is irradiating the second pattern with laser light.

[0017] In one embodiment, the mask processing apparatus includes a liquid supply unit configured to supply processing liquid to a mask supported on the support unit, wherein the controller controls the rotating part to rotate the mask while the liquid supply unit is supplying the processing liquid to the mask.

[0018] In one embodiment, the movable platform includes: a base positioned below the support; a first drive unit mounted on the base and moving the support in a first direction horizontal relative to the ground; and a second drive unit mounted on the base and moving the support in a second direction orthogonal to the first direction and horizontal relative to the ground.

[0019] In one embodiment, the mask processing apparatus further includes a container having a processing space for processing the mask and a recovery path for recovering the processing liquid, wherein the support unit supports the substrate in the processing space.

[0020] In one embodiment, the position of the laser irradiator is fixed when the laser irradiator is irradiating the laser.

[0021] In one embodiment, a process is performed to minimize the deviation between the critical dimensions of the first pattern and the critical dimensions of the second pattern by irradiating the laser with respect to the second pattern.

[0022] In one embodiment, regarding the first pattern and the second pattern disposed at each unit, the first pattern is a monitoring pattern of the exposure pattern formed at the unit, and the second pattern is a condition setting pattern of the mask processing apparatus.

[0023] The present invention provides a substrate processing apparatus. The substrate processing apparatus includes: a support unit configured to support and rotate a substrate on which a pattern is formed; a heating unit configured to heat a specific area of ​​the substrate; and a controller configured to control the support unit and the heating unit. The support unit includes: a support portion for supporting the substrate; and a moving stage portion configured to change the position of the support portion. The controller controls the moving stage portion to change the position of the substrate supported on the support unit, such that a specific pattern in the pattern is positioned at the specific area.

[0024] In one embodiment, the support unit further includes a rotating part configured to rotate the moving stage, wherein the controller controls the rotating part such that the substrate does not rotate while the heating unit heats the particular pattern.

[0025] In one embodiment, the substrate processing apparatus further includes a liquid supply unit for supplying processing liquid to the substrate supported on the support unit, wherein the controller controls the rotating part to rotate the substrate while the liquid supply unit is supplying the processing liquid to the substrate.

[0026] In one embodiment, the movable platform includes: a base positioned below the support; a first drive unit mounted on the base and moving the support in a first direction horizontal relative to the ground; and a second drive unit mounted on the base and moving the support in a second direction orthogonal to the first direction and horizontal relative to the ground.

[0027] In one embodiment, the heating unit includes a laser irradiator that irradiates the specific pattern with laser light, and the position of the laser irradiator is fixed while the laser light is irradiating the pattern.

[0028] In one embodiment, a process is performed to minimize the deviation between the critical size of the particular pattern and the critical size of patterns other than the particular pattern by irradiating the laser with respect to the particular pattern.

[0029] In one embodiment, the specific pattern is a condition setting pattern for the substrate processing apparatus.

[0030] The present invention provides a substrate processing method for etching a substrate having a first pattern and a second pattern formed thereon, the second pattern being different from the first pattern. The substrate processing method includes: loading the substrate and supporting it on a support unit, a substrate loading step; moving the position of the substrate supported on the support unit, thereby moving the support unit so that the second pattern is positioned at a specific region, a position correction step; supplying a processing liquid to the substrate supported on the support unit, a liquid processing step; and irradiating the second pattern at the specific region with laser light from a laser irradiator disposed above the specific region.

[0031] In one embodiment, the substrate is rotated during the liquid treatment step.

[0032] In one embodiment, during the heating step, the rotation of the substrate is stopped.

[0033] In one embodiment, the position of the laser irradiator is fixed when the laser irradiator is irradiating the laser.

[0034] In one embodiment, the deviation between the critical size of the first pattern and the critical size of the second pattern is minimized by irradiating the second pattern with the laser.

[0035] According to the embodiments conceived in this invention, the substrate can be processed effectively.

[0036] According to the embodiments conceived in this invention, the critical dimensions of patterns formed on a substrate can be made consistent.

[0037] According to an embodiment of the present invention, a specific pattern formed on a substrate is precisely etched.

[0038] The effects of this invention are not limited to those described above, and other effects not mentioned will become apparent to those skilled in the art from the following description. Attached Figure Description

[0039] Referring to the accompanying drawings below, the above and other objects and features will become apparent from the following description, wherein, unless otherwise stated, the same reference numerals refer to the same components throughout the drawings, and in the drawings:

[0040] Figure 1 The normal distribution of the critical dimensions of the monitoring pattern and the anchoring pattern is shown.

[0041] Figure 2 A plan view of a substrate processing apparatus according to an embodiment of the present invention is shown schematically.

[0042] Figure 3 It schematically shows that in Figure 2 The state of the substrate being processed in the liquid processing chamber.

[0043] Figure 4 schematically shown Figure 2 Implementation scheme for the liquid handling chamber.

[0044] Figure 5 for Figure 4 A top view of the mobile platform.

[0045] Figure 6 In order to be in Figure 4 A top view of the support unit that moves within the liquid handling chamber.

[0046] Figure 7 Showing Figure 4 The heating unit consists of the main body, laser module, image module, and optical module.

[0047] Figure 8 for Figure 7 A top view of the image module.

[0048] Figure 9 schematically shown Figure 2 Another implementation scheme for the liquid handling chamber.

[0049] Figure 10 and Figure 11 The illustration shows how light is shone onto... Figure 9 The state of the substrate at the heating unit.

[0050] Figure 12 This is a flowchart of a substrate processing method according to an embodiment of the present invention.

[0051] Figure 13 Demonstrates the use of execution Figure 12 The state of the substrate processing apparatus during the process preparation steps.

[0052] Figure 14 Demonstrates the use of execution Figure 12 The state of the substrate processing apparatus in the position correction step.

[0053] Figure 15 Demonstrates the use of execution Figure 12 The state of the substrate processing apparatus in the liquid processing step.

[0054] Figure 16 Shown in Figure 12 The liquid processing step completes the liquid supply process of the substrate processing apparatus.

[0055] Figure 17 Demonstrates the use of execution Figure 12 The state of the substrate processing apparatus during the heating step.

[0056] Figure 18 Demonstrates the use of execution Figure 12 The state of the substrate processing apparatus during the rinsing step. Detailed Implementation

[0057] The inventive concept can be modified in various ways and can take many forms, and specific embodiments of these various forms will be shown and described in detail in the accompanying drawings. However, embodiments of the inventive concept are not intended to limit the specific forms disclosed, and it should be understood that the inventive concept includes all variations, equivalents, and substitutions contained within the spirit and technical scope of the inventive concept. In the description of the inventive concept, detailed descriptions of related known technologies will be omitted when the essence of the inventive concept becomes unclear.

[0058] The terminology used herein is for the purpose of describing particular embodiments only and is not intended to limit the inventive concept. As used herein, the singular forms “a,” “an,” and “the” are intended to include the plural forms as well, unless the context clearly indicates otherwise. It should also be understood that the terms “comprising” and / or “including” as used in this specification specify the presence of the stated features, integers, steps, operations, elements, and / or components, but do not exclude the presence or addition of one or more other features, integers, steps, operations, elements, components, and / or groups thereof. As used herein, the term “and / or” includes any and all combinations of one or more of the associated listed items. Furthermore, the term “exemplary” is intended to refer to an example or illustration.

[0059] It should be understood that although the terms "first," "second," "third," etc., may be used herein to describe various elements, components, regions, layers, and / or segments, these elements, components, regions, layers, and / or segments should not be limited by these terms. These terms are used only to distinguish one element, component, region, layer, and / or segment from another. Therefore, the first element, first component, first region, first layer, or first segment discussed below may be referred to as a second element, second component, second region, second layer, or second segment without departing from the teachings of the inventive concept.

[0060] In the following, embodiments of the inventive concept will be described in detail with reference to the accompanying drawings.

[0061] In the following text, reference will be made to Figures 2 to 18 The embodiments of the present invention are described in detail. Figure 2 A plan view of a substrate processing apparatus according to an embodiment of the present invention is shown schematically. (Refer to...) Figure 2 The substrate processing apparatus includes an indexing module 10, a processing module 20, and a controller 30. According to one embodiment, the indexing module 10 and the processing module 20 are arranged along one direction when viewed from above. Hereinafter, the direction in which the indexing module 10 and the processing module 20 are arranged is defined as a first direction X, the direction perpendicular to the first direction X when viewed from above is defined as a second direction Y, and the direction perpendicular to the plane including the first direction X and the second direction Y is defined as a third direction Z.

[0062] The indexing module 10 transfers the substrate M from the container C containing the substrate M to the processing module 20 for processing the substrate M. The indexing module 10 stores the substrate M, which has undergone predetermined processing at the processing module 20, in the container C. The longitudinal direction of the indexing module 10 can be formed in the second direction Y. The indexing module 10 can have a loading port 12 and an index frame 14.

[0063] A container C containing the substrate M is positioned on the loading port 12. The loading port 12 can be positioned on the opposite side of the processing module 20 relative to the index frame 14. Multiple loading ports 12 can be provided, and the multiple loading ports 12 can be arranged in a row along the second direction Y. The number of loading ports 12 can be increased or decreased according to conditions such as the process efficiency and floor space of the processing module 20.

[0064] For container C, a sealed container such as a front-open unified pod (FOUP) can be used. Container C can be placed on loading port 12 by means of a conveying device (not shown, such as an overhead conveyor, overhead transport vehicle, or automated guided vehicle) or by an operator.

[0065] An indexing robot 120 and an indexing track 124 can be disposed at the indexing frame 14. The indexing robot 120 transports the substrate M. The indexing robot 120 can transport the substrate M between the indexing module 10 and the buffer unit 200, which will be described later. The indexing robot 120 includes an indexing hand 122 on which the substrate M is placed. The substrate M can be placed on the indexing hand 122. The indexing hand 122 can be configured to be movable back and forth, rotatable in the third direction Z, and movable along the third direction Z. Multiple hands 122 can be configured to be spaced apart from each other in the vertical direction. Multiple hands 122 can be independently movable back and forth.

[0066] Index track 124 is disposed in index frame 14, and the longitudinal direction of index track is along the second direction Y. Index robot 120 can be placed on index track 124, and index robot 120 can be moved along index track 124.

[0067] Controller 30 can control the substrate processing apparatus. The controller may include a process controller comprising: a microprocessor (computer) that performs control of the substrate processing apparatus; a user interface (such as a keyboard) through which an operator inputs commands to manage the substrate processing apparatus; a display showing the operation of the substrate processing apparatus; and a memory unit storing processing plans (i.e., control programs) for executing the processing technology of the substrate processing apparatus by controlling the process controller, or programs for executing components of the substrate processing apparatus based on data and processing conditions. Furthermore, the user interface and the memory unit may be connected to the process controller. The processing plan may be stored in a storage medium of the storage unit, and the storage medium may be a hard disk, a portable disk (such as a CD-ROM or DVD), or semiconductor memory (such as flash memory).

[0068] Processing module 20 includes a buffer unit 200, a transfer chamber 300, and a liquid processing chamber 400. The buffer unit 200 provides space in which substrates M loaded into and removed from processing module 20 temporarily reside. The transfer chamber 300 provides space for transferring substrates M between the buffer unit 200, the liquid processing chamber 400, and the drying chamber 500. The liquid processing chamber 400 supplies liquid to substrates M to perform liquid processing processes for processing substrates M.

[0069] A buffer unit 200 can be disposed between the index frame 14 and the transfer chamber 300. The buffer unit 200 can be positioned at the end of the transfer chamber 300. A slot (not shown) (in which the substrate M is placed) is disposed inside the buffer unit 200. Multiple slots (not shown) can be arranged to be spaced apart from each other in the third direction Z.

[0070] The buffer unit 200 has an open front and a closed back. The front is the surface facing the index module 10, while the back is the surface facing the transfer chamber 300. The indexing robot 120 can access the buffer unit 200 through the front, and the transfer robot 320, which will be described later, can access the buffer unit 200 through the back.

[0071] The transfer chamber 300 may have a longitudinal direction arranged along a first direction X. The liquid processing chamber 400 and the drying chamber 500 may be disposed on both sides of the transfer chamber 300. The liquid processing chamber 400 and the drying chamber 500 may be disposed on one side of the transfer chamber 300. The transfer chamber 300 and the liquid processing chamber 400 may be arranged along a second direction Y. The transfer chamber 300 and the drying chamber 500 may be arranged along a second direction Y.

[0072] According to one embodiment, the liquid processing chamber 400 can be disposed on both sides of the transfer chamber 300. The liquid processing chamber 400 can be disposed on the side of the transfer chamber 300 in an arrangement of A×B (where A and B are natural numbers greater than 1 or 1, respectively) along the first direction X and the third direction Z.

[0073] The transfer chamber 300 includes a transfer robot 320 and a transfer track 340. The transfer robot 320 transfers a substrate M. The transfer robot 320 transfers the substrate M between the buffer unit 200, the liquid handling chamber 400, and the drying chamber 500. The transfer robot 320 includes a transfer hand 322 on which the substrate M is placed. The substrate M can be placed on the transfer hand 322. The transfer hand 322 can be configured to be movable forward and backward, rotatable about a third direction Z, and movable along a third direction Z. Multiple hands 322 are configured to be spaced apart from each other in the vertical direction, and the multiple hands 322 can be independently movable forward and backward.

[0074] The conveyor track 340 is disposed within the conveyor chamber 300 along its longitudinal direction. In one embodiment, the longitudinal direction of the conveyor track 340 may be disposed along a first direction X. A conveyor robot 320 may be placed on the conveyor track 340 and may be movable on the conveyor track 340.

[0075] The substrate M, which is processed in the liquid processing chamber 400, will be described in detail below. Figure 3It schematically shows that in Figure 2 The state of the substrate being processed in the liquid processing chamber.

[0076] Reference Figure 3 The object to be processed in the liquid processing chamber 400 can be any of a wafer, glass, or a photomask. For example, the substrate M to be processed in the liquid processing chamber 400 can be a photomask, which is a "frame" used in the exposure process.

[0077] The substrate M may be rectangular. The substrate M may be a photomask, which is a "frame" used in the exposure process. At least one reference mark AK may be marked on the substrate M. For example, multiple reference marks AK may be formed in each corner region of the substrate M. The reference mark AK may be a mark called an alignment key used when aligning the substrate M. Furthermore, the reference mark AK may be a mark used to derive the position of the substrate M. For example, the image module 470, described later, can acquire an image by imaging the reference mark AK and transmit the acquired image to the controller 30. The controller 30 can then analyze the image including the reference mark AK to detect the precise position of the substrate M. Furthermore, the reference mark AK can be used to determine the position of the substrate M when it is being transported.

[0078] Cells CE can be formed on substrate M. At least one cell CE can be formed, for example, multiple cells CE. Multiple patterns can be formed at each cell CE. The patterns formed at each cell CE can be defined as a pattern group. The patterns formed at cell CE may include an exposure pattern EP and a first pattern P1. A second pattern P2 can be provided in a region outside the cell region where multiple cells are formed.

[0079] An actual pattern can be formed on a substrate M using an exposure pattern EP. The first pattern P1 can be a single-cell representative pattern representing the exposure pattern EP in a cell CE. Furthermore, when multiple cells CE are provided, a first pattern is provided in each cell, thereby allowing for multiple first patterns P1. In one embodiment, each cell in the multiple cells CE may have a single first pattern P1. However, the inventive concept is not limited to this; multiple first patterns P1 can be formed in a single cell CE. The first pattern P1 can have the form of combining portions of each exposure pattern EP. The first pattern P1 can be referred to as a monitoring pattern. The average critical size of the multiple first patterns P1 can be referred to as a critical size monitoring macro.

[0080] When an operator examines the first pattern P1 using a scanning electron microscope (SEM), they can estimate whether the form of the exposure pattern EP formed in a cell CE is good or bad. Accordingly, the first pattern P1 can be used as an inspection pattern to inspect the exposure pattern EP. Furthermore, unlike the example above, the first pattern P1 can be any type of exposure pattern EP used in the actual exposure process. Moreover, the first pattern P1 can be used not only as an inspection pattern to inspect the exposure pattern but also as the exposure pattern used in the actual exposure process.

[0081] The second pattern P2 can be an entire-cell representative pattern representing the exposure pattern EP on an entire cell of the substrate M. For example, the second pattern P2 can have the form of combining portions of each of the first patterns in the first pattern P1.

[0082] When an operator inspects the second pattern P2 using a scanning electron microscope (SEM), they can estimate whether the form of the exposure pattern EP formed on a substrate M is good or bad. Accordingly, the second pattern P2 can be used as an inspection pattern. Furthermore, the second pattern P2 can be an inspection pattern not used in the actual exposure process. The second pattern P2 can be a pattern used to set the process conditions of the exposure apparatus. The second pattern P2 can also be referred to as an anchoring pattern. The second pattern P2 can be located outside the area of ​​the forming unit CE.

[0083] The substrate processing apparatus disposed in the liquid processing chamber 400 will be described in detail below. As an example, the processing process performed in the liquid processing chamber 400 during the process of manufacturing a mask for the exposure process will be described below.

[0084] The substrate M loaded into and processed in the liquid processing chamber 400 may be a pre-treated substrate M. The critical dimensions of the first pattern P1 and the second pattern P2 of the substrate M loaded into the liquid processing chamber 400 may be different from each other. For example, the critical dimension of the first pattern P1 may be larger than the critical dimension of the second pattern P2. In one embodiment, the critical dimension of the first pattern P1 may have a first width (e.g., 69 nm). The critical dimension of the second pattern P2 may have a second width (e.g., 68.5 nm).

[0085] Figure 4 schematically shown Figure 2 An implementation scheme for the liquid handling chamber. (Refer to...) Figure 4The liquid processing chamber 400 may include a housing (not shown), a support unit 420, a processing container 430, a liquid supply unit 440, and a heating unit 450.

[0086] The housing (not shown) has an internal space. The housing (not shown) may have an internal space in which a processing container 430 is disposed. The housing (not shown) may have an internal space in which a liquid supply unit 440 and a heating unit 450 are disposed. The housing (not shown) may be provided with a channel (not shown) through which the substrate M can be loaded and unloaded. The inner wall surface of the housing (not shown) may be coated with a material that is highly resistant to chemicals (supply by the liquid supply unit 440).

[0087] An exhaust port (not shown) may be formed on the bottom surface of the housing (not shown). The exhaust port (not shown) may be connected to an exhaust component (such as a pump) capable of venting the interior space. Accordingly, smoke or similar substances that may be generated in the interior space may be discharged to the outside of the housing (not shown) through the exhaust port (not shown).

[0088] Support unit 420 can support substrate M. Support unit 420 can rotate substrate M. Support unit can support and rotate substrate M in the processing space included in processing container 430 (described later). Support unit 420 may include chuck 421, support pin 422, first drive unit 423, second drive unit 424, support shaft 426, and drive member 427.

[0089] In the following text, chuck 421 and support pin 422 are included and defined as support portions. The support portions support substrate M. In one embodiment, the support portions may support substrate M in which a first pattern P1 is formed in a plurality of cells CE and a second pattern P2 is formed outside the area of ​​the forming cells CE.

[0090] The chuck 421 may be in the form of a plate with a constant thickness. When viewed from above, the chuck 421 may have a top surface configured in a generally circular shape. The top surface of the chuck 421 may be configured to have an area larger than that of the substrate M. Support pins 422 may be mounted on the chuck 421.

[0091] Support pins 422 can support substrate M. Multiple support pins 422 are arranged along the circumferential direction of the top chuck 421, so that when viewed from above, the support pins 422 can have a generally circular shape. When viewed from above, the support pins 422 can have stepped portions supporting substrate M. The stepped portions of the support pins 422 can have a first surface (bottom surface) and a second surface (side surface). In one embodiment, the first surface can support the back (bottom) surface at the edge region of substrate M. The second surface can support the side surface of substrate M to limit lateral movement of substrate M when it is rotated. At least one support pin 422 can be provided. In one embodiment, multiple support pins 422 can be provided. The number of support pins 422 can be set to correspond to the number of corners of substrate M having a rectangular shape. The support pins 422 can support the back (bottom) surface of substrate M spaced apart from the top surface of chuck 421.

[0092] The first drive unit 423, the second drive unit 424, and the base 425 can be positioned below the chuck 421. Hereinafter, the first drive unit 423, the second drive unit 424, and the base 425 are included to define a moving stage. The moving stage moves the position of the support unit. In one embodiment, the moving stage can move the support unit in a first direction X and a second direction Y. The moving stage can move the chuck 421 in the first direction X and the second direction Y.

[0093] Figure 5 When viewed from above Figure 4 The view of the mobile station. Figure 6 When viewed from above Figure 4 A view of the support unit that moves within the liquid handling chamber. (Refer to...) Figure 5 and Figure 6 The first drive unit 423 can be mounted at the base 425, which will be explained later. The first drive unit 423 can be mounted above the base 425. The first drive unit can be mounted between the base 425 and the second drive unit 424, which will be explained later. The first drive unit 423 can move the support unit. For example, the first drive unit 423 can move the support unit in a first direction X. The first drive unit 423 can be composed of a first body 423a, a first driver 423b, and a first guide rail 423c.

[0094] The first body 423a can be mounted on the base 425. The first body 423a can be positioned on the first guide rail 423c. The first body 423a can move along the longitudinal direction of the first guide rail 423c. The first body 423c can move in the first direction X. The first body 423c can move in the first direction X. The second body 424b, which will be explained later, can be described later.

[0095] The first actuator 423b can be configured as any of the known devices for generating power, such as a pneumatic cylinder, a hydraulic cylinder, a solenoid, or a motor for generating driving force. The first actuator 423b can generate driving force to move the first body 423a along the longitudinal direction of the first guide rail 423c. The first guide rail 423c can be mounted above the base 425. The first guide rail 423c can be mounted on the top surface of the base. The longitudinal direction of the first guide rail 423c can be formed along a first direction X.

[0096] Unlike the example above, the first drive unit 423 may include a first body 423a, a first driver 423b, and a first shaft (not shown). The first shaft (not shown) may be coupled to the first body 423a to receive the driving force generated by the first driver 423b to move the first body 423a along a first direction X.

[0097] The second drive unit 424 can be mounted on the base 425, which will be described later. The second drive unit 424 can be mounted above the first drive unit 423. The base 425, the first drive unit 423, and the second drive unit 424 can be sequentially mounted in a direction away from the ground. The second drive unit 424 can move the support unit. For example, the second drive unit 424 can move the support unit in a second direction Y. The second drive 424 may include a second body 424a, a second drive 424b, and a second guide rail 424c.

[0098] The second body 424a can be positioned on the first body 423a. The second body 424a can be positioned on the second guide rail 424c. The second body 424a can move along the longitudinal direction of the second guide rail 424c. According to one embodiment, the second body 424a can be fixed to the chuck 421. For example, the top surface of the second body 424a can be attached to the bottom surface of the chuck 421.

[0099] The second body 424a can move in the second direction Y. The second actuator 424b can transmit driving force to the second body 424a. The second actuator 424b can generate driving force to move the second body 424a along the longitudinal direction of the second guide rail 424c. Since the second actuator 424b has a similar structure and form to the first actuator 423b described above, the description of the second actuator will be omitted. The second guide rail 424c can be mounted above the first body 423a. The second guide rail 424c can be mounted on the top surface of the first body 423a. The longitudinal direction of the second guide rail 424c can be formed along the second direction Y.

[0100] Unlike the example above, the second driver 424 may include a second body 424a, a second driver 424b, and a second shaft (not shown). The second shaft (not shown) may be coupled to the second body 424a to receive the driving force generated by the second driver 424b to move the second body 424a in the second direction Y.

[0101] The base 425 can be positioned below the chuck 421. The base 425 can be positioned on the top portion of the support shaft 426, which will be described later. The base 425 can be positioned between the chuck 421 and the support shaft 426. The first drive unit 423 and the second drive unit 424 can be mounted on the base 425. The first guide rail 423c can be mounted on the top surface of the base 425.

[0102] Return to reference Figure 4 The support shaft 426 and drive member 427 can be positioned below the chuck 421. The support shaft 426 and drive member 427 can be positioned below the moving stage portion. Hereinafter, the support shaft 426 and drive member 427 are included and defined as rotating parts. The rotating parts can rotate the moving stage unit. The rotating parts can rotate the base 425.

[0103] The support shaft 426 may be a hollow shaft. The support shaft 426 may be rotated by a drive member 427. The drive member 427 may be a hollow motor. When the drive member 427 rotates the support shaft 426, the base 425 connected to the support shaft 426 may rotate. As the base 425 rotates, the first drive unit 423 connected to the base 425 and the second drive unit 424 connected to the first drive unit 423 may rotate, and the chuck 421 connected to the second drive unit 424 may rotate. The base plate M placed on the support pin 422 (which is mounted on the chuck 421) may rotate together with the rotation of the chuck 421.

[0104] The processing container 430 has a processing space that is open at the top. The processing container 430 may be in the form of a cylinder with an open top. Liquid processing and heat processing can be performed on the substrate M in the processing space. The processing container 430 can prevent the processing liquid supplied to the substrate M from spreading to the housing (not shown), the liquid supply unit 440, and the heating unit 450.

[0105] The processing container 430 may have multiple recovery containers 432a, 432b, and 432c. Each of the recovery containers 432a, 432b, and 432c may recover different liquids from the liquid used to process the substrate M. Each of the recovery containers 432a, 432b, and 432c may have a recovery space for recovering the liquid used to process the substrate M. Each of the recovery containers 432a, 432b, and 432c may be arranged in a ring shape surrounding the support unit 420. When performing the liquid processing process, the liquid dispersed by the rotation of the substrate M is introduced into the recovery space through an inlet formed between the recovery containers 432a, 432b, and 432c. Different types of processing liquids may be introduced into each of the recovery containers 432a, 432b, and 432c.

[0106] According to one embodiment, the processing container 430 may have a first recycling container 432a, a second recycling container 432b, and a third recycling container 432c. The first recycling container 432a may be configured as a ring around the support plate 420. The second recycling container 432b may be configured as a ring around the first recycling container 432a. The third recycling container 432c may be configured as a ring around the second recycling container 432b.

[0107] For each of the recovery containers 432a, 432b, and 432c, recovery lines 434a, 434b, and 434c extending vertically in the bottom direction on the corresponding bottom surface can be connected. Each of the recovery lines 434a, 434b, and 434c can discharge the treatment liquid introduced through each of the recovery containers 432a, 432b, and 432c. The discharged treatment liquid can be reused using an external treatment liquid regeneration system (not shown).

[0108] The processing container 430 can be connected to a lifting / lowering member 436. The lifting member 436 can change the position of the processing container 430 in a third direction Z. The lifting member 436 can be a drive device for moving the processing container 430 in the vertical direction. The lifting member 436 can move the processing container 430 in the upward direction when liquid processing and / or heat treatment are performed on the substrate M. The lifting member 436 can move the processing container 430 in the downward direction when the substrate M is loaded into or removed from the interior space of the housing (not shown).

[0109] Liquid supply unit 440 can supply liquid to substrate M. Liquid supply unit 440 can supply a processing liquid for liquid treatment of substrate M. Liquid supply unit 440 can supply processing liquid to substrate M supported by support unit 420. In one embodiment, liquid supply unit 440 can supply processing liquid to substrate M, which has a first pattern formed within a plurality of units CE and a second pattern P2 formed outside the area of ​​the forming units CE.

[0110] The processing solution can be an etching solution or a rinsing solution. The etching solution can be a chemical. The etching solution can etch patterns formed on the substrate M. The etching solution can also be referred to as an etching solution. The etching solution can be a liquid containing a mixed solution of ammonia, water, and additives, and includes hydrogen peroxide. The rinsing solution can clean the substrate M. The rinsing solution can be a known chemical liquid.

[0111] Reference Figure 6 The liquid supply unit 440 may include a nozzle 441, a fixed body 442, a rotating shaft 443, and a rotating member 444. The nozzle 441 supplies the processing liquid to the substrate M supported by the support unit 420. One end of the nozzle 441 may be connected to the fixed body 442, and the other end of the nozzle may extend in a direction from the fixed body 442 toward the substrate M. The nozzle 411 may extend from the fixed body 442 in a first direction X.

[0112] Nozzle 411 may include a first nozzle 411a, a second nozzle 411b, and a third nozzle 411c. Any one of the first nozzle 411a, the second nozzle 411b, or the third nozzle 411c can supply the chemical C in the treatment liquid. Furthermore, the other nozzle among the first nozzle 411a, the second nozzle 411b, and the third nozzle 411c can supply a rinsing liquid R in the treatment liquid. The last nozzle among the first nozzle 411a, the second nozzle 411b, and the third nozzle 411c can supply a different type of chemical C than the chemical C supplied by the other nozzle among the first nozzle 411a, the second nozzle 411b, and the third nozzle 411c.

[0113] The body 442 can fix and support the nozzle 441. The body 442 can be connected to a rotation axis 443 that rotates in a third direction Z via a rotation member 444. When the rotation member 444 rotates the rotation axis 443, the body 442 can rotate about the third direction Z. Accordingly, the outlet of the nozzle 441 can move between a liquid supply position (the position where processing liquid is supplied to the substrate M) and a standby position (the position where processing liquid is not supplied to the substrate M).

[0114] Heating unit 450 can heat substrate M. Heating unit 450 can heat a portion of substrate M. Heating unit 450 can heat a specific area of ​​substrate M. Heating unit 450 can heat substrate M on which a liquid film is formed by supplying chemical C. Heating unit 450 can heat patterns formed on substrate M. Heating unit 450 can heat some of the patterns formed on substrate M. Heating unit 450 can heat either the first pattern P1 or the second pattern P2. For example, heating unit 450 can heat the second pattern P2 of the first pattern P1 and the second pattern P2. In one embodiment, heating unit 450 can heat the second pattern P2 by irradiating it with laser L.

[0115] Figure 7 Showing Figure 4 The heating unit consists of the main body, laser module, image module, and optical module. Figure 8 for Figure 7 A top view of the image module. (Refer to...) Figure 7 and Figure 8 The heating unit 450 may include a body 451, a driver 453, a shaft 454, a moving component 455, a laser module 460, an image module 470, and an optical module 480.

[0116] The body 451 can be a container with mounting space. The body 451 may be equipped with a laser illumination module 460, an image module 470, and an optical module 480, which will be described later. The body 451 may include a laser illuminator 452. Laser L emitted by the laser illumination module 460 (described later) can be emitted onto the substrate M via the laser illuminator 452. Furthermore, light irradiated by the illumination member 472 (described later) can also be provided via the laser illuminator 452. Additionally, image imaging by the image acquisition member 471 (described later) can be performed via the laser illuminator 452.

[0117] The driver 453 can be a motor. The driver 453 can be connected to a shaft 454. The shaft 454 can be connected to the body 451. The shaft 454 can be connected to the body 451 via a moving member 455. The driver 453 can rotate the shaft 454. When the shaft 454 rotates, the body 451 can rotate. Accordingly, the position of the laser irradiator 452 on the body 451 can be changed. For example, the position of the laser irradiator 452 can be changed using a third direction Z as the axis of rotation. When viewed from above, the center of the laser irradiator 452 can be moved in an arc around the shaft 454. When viewed from above, the center of the laser irradiator 452 can be moved to pass through the center of the substrate M supported by the support unit 420.

[0118] The laser irradiator 452 can be moved between a heated position where the laser L irradiates the substrate M and a standby position (as a standby position when heating the substrate M is not performed). Furthermore, the driver 453 can move the axis 454 in the vertical direction. That is, the driver 453 can change the position of the laser irradiator 452 in the vertical direction. Moreover, multiple drivers 453 can be provided, one of which can be configured as a rotary motor for rotating the axis 454, while another driver can be configured as a linear motor for moving the axis 454 in the vertical direction.

[0119] The movable member 455 may be disposed between the shaft 454 and the body 451. The movable member 455 may be an LM guide. The movable member 455 may move the body 451 in a lateral direction. The movable member 455 may move the body 451 along a first direction X and / or a second direction Y.

[0120] The position of the laser irradiator 452 of the heating unit 450 can be moved to a heating position and a standby position by means of the movable member 455 and the driver 453. The position of the laser irradiator 452 is fixed when it irradiates the substrate M with laser L. In one embodiment, when viewed from above, the heating position can be a position where the center of the laser irradiator 452 coincides with the center of the support unit 420. For example, when viewed from above, the laser irradiator 452 can be positioned at a position corresponding to point A of the substrate M supported on the support unit 420. When processing liquid is supplied to the liquid supply unit 440 on the substrate M, the laser irradiator 452 is moved to the standby position when the substrate M is loaded into the housing (not shown) or removed from the housing (not shown).

[0121] The laser module 460 may include a laser irradiation unit 461, a beam expander 462, and a tilting member 463. The laser irradiation unit 461 irradiates a laser L. The laser irradiation unit 461 can irradiate the laser L onto a substrate M supported by a support unit 420. For example, the laser irradiation unit 461 can irradiate the laser L onto a second pattern P2 formed on the substrate M supported by the support unit 420. The laser irradiation unit 461 can emit a linear laser L. The shape / profile of the laser L emitted by the laser irradiation unit 461 can be adjusted by the beam expander 462. For example, the diameter of the laser L emitted by the laser irradiation unit 461 can be changed by the beam expander 462. The diameter of the laser L emitted by the laser irradiation unit 461 can be enlarged or reduced by the beam expander 462.

[0122] The tilting member 463 can tilt the irradiation direction of the laser L emitted by the laser irradiation unit 461. For example, the tilting member 463 can rotate the laser irradiation unit 461 based on an axis that tilts the irradiation direction of the laser L irradiated by the laser irradiation unit 461. The tilting member 463 may include a motor.

[0123] Image module 470 can monitor the laser L emitted by laser irradiation unit 461. Image module 470 may include image acquisition component 471, illumination component 472, first reflector 473, and second reflector 474. Image acquisition component 471 can acquire images of substrate M. Image acquisition component 471 can acquire images including points illuminated by laser L irradiated by laser irradiation unit 461. Image acquisition component 471 can acquire images including second pattern P2 formed on substrate M. Image acquisition component 471 may be a camera.

[0124] The illumination component 472 can provide light, thereby facilitating image acquisition by the image acquisition component 471. The light provided by the illumination component 472 can be reflected sequentially along the first reflector 473 and the second reflector 474.

[0125] When viewed from above, the optical module 480 may have a coaxial illumination direction for the laser L illuminated by the laser illumination unit 461, an imaging direction for the image acquisition member 471 to acquire an image, and an illumination direction for the light provided by the illumination member 472. The illumination member 472 can transmit light to the area of ​​the laser L illuminated by the optical module 480. Furthermore, the image acquisition member 471 can acquire images (e.g., images / photographs) of the area illuminated by the laser L in real time. The optical module 480 may include a first reflective member 481, a second reflective member 482, and a lens 483.

[0126] The first reflective member 481 can change the irradiation direction of the laser L emitted by the laser irradiation unit 461. For example, the first reflective member 481 can change the irradiation direction of the laser L irradiated in the horizontal direction to a vertical downward direction. In addition, the laser L reflected by the first reflective member 481 can sequentially pass through the lens 483 and the laser irradiator 452, and can be transmitted to the substrate M to be processed.

[0127] The second reflective member 482 can change the imaging direction of the image acquisition member 471. For example, the second reflective member 482 can change the imaging direction of the image acquisition member 471 from the horizontal direction to the vertical downward direction. In addition, the second reflective member 482 can change the illumination direction of the light sequentially transmitted through the first reflector 473 and the second reflector 474 of the illumination member 472 from the horizontal direction to the vertical downward direction.

[0128] Furthermore, when viewed from above, the first reflective member 481 and the second reflective member 482 can be positioned at the same location. The first reflective member 481 and the second reflective member 482 can be configured such that the imaging direction coincides with the laser path. Furthermore, the second reflective member 482 can be positioned above the first reflective member 481. Additionally, the first reflective member 481 and the second reflective member 482 can be tilted at the same angle.

[0129] The controller 30 can control the substrate processing apparatus. The controller 30 can control the support unit 420 and the heating unit 450. The controller 30 can control the moving stage to change the position of the substrate M positioned on the support unit 420. The controller 30 can control the moving stage to position a specific pattern formed on the substrate M within a specific area. The controller 30 can control the moving stage to position a second pattern P2 formed on the substrate M at the center of the laser irradiator 452, which has been moved to the heating position, when viewed from above. The controller 30 can control the first driving unit 423 and the second driving unit 424 to move the second pattern P2 to the area including the center of the laser irradiator 452, which has been moved to the heating position, when viewed from above.

[0130] When the substrate M is supported on the support unit 420, the controller 30 can move the moving stage to position a specific pattern formed on the substrate M at a specific area. After the substrate M is supported on the support unit 420, the controller 30 can control the moving stage to position the second pattern P2 at a heating position before the processing liquid is supplied to the substrate M by the liquid supply unit 440. In one embodiment, the moving stage can be controlled so that the second pattern P2 is positioned at point A.

[0131] After the second pattern P2 is positioned below the heating position, and the liquid supply unit 440 supplies the processing liquid to the substrate M, the controller 30 can control the rotating part to rotate the support unit 420. When the chemical C is supplied from the liquid supply unit 440 to the substrate M, the controller 30 can rotate the support shaft 426 by driving the drive member 427. Accordingly, the moving stage and chuck 421 can be rotated, and the substrate M can be rotated. After the processing liquid is supplied from the liquid supply unit 440 to the substrate M, the controller 30 can control the rotating part to stop the rotation of the support unit 420 for a set time.

[0132] The controller 30 can control the movement of the heating unit 450, causing the laser irradiator 452 of the heating unit 450 to move from the standby position to the heating position after a set time. The controller 30 can control the heating unit 450 to irradiate the second pattern P2 positioned at the heating position with the laser L. When the laser L is irradiating the second pattern P2, the controller 30 can control the rotating part to stop the rotation of the support unit 420.

[0133] A second pattern P2 can be formed at any region on the substrate M. The position of the second pattern P2 formed at any region on the substrate M is different for each substrate M loaded into the substrate processing apparatus. It is necessary to change the position of the heating unit 450 so that laser is irradiated relative to the second pattern P2 formed at each substrate M in different regions for each process. In this case, the position information of the second pattern P2 should be obtained for each substrate M, and the heating unit 450 should be moved to the top position corresponding to the second pattern P2 based on the obtained position information. Accordingly, when there is a slight error in the position information of the second pattern P2 or the amount of movement of the heating unit 450, it is difficult to accurately etch the second pattern P2. Consequently, an error occurs between the critical size of the first pattern P1 and the critical size of the second pattern P2.

[0134] According to the embodiment of the present invention described above, the heating position, which is the specific area irradiated by the laser L, can be set at the heating unit 450, and the heating unit 450 can irradiate the substrate M with the laser L only at a fixed heating position. Furthermore, the second pattern P2, which can be formed at different locations on each substrate M, can be moved to the heating position (the heating position is the specific area irradiated by the laser L), and the laser L can be directed towards the second pattern P2 moved to the heating position. That is, the chuck 421 supporting the substrate M on which the second pattern P2 is formed can use a moving stage to position the second pattern P2 at the heating position. Accordingly, even if the second pattern P2 is formed in different areas on each substrate M, the laser L can be irradiated only at a specific location to perform precise etching with respect to the second pattern P2.

[0135] Figure 9 schematically shown Figure 2 Another embodiment of the liquid handling chamber. Referring below... Figure 9 A liquid processing chamber according to another embodiment of the present invention is described. Since the description of the liquid processing chamber according to the other embodiment is similar to the description of the liquid processing chamber according to the above embodiment, the description of the liquid processing chamber will be omitted except where additional description is given for the liquid processing chamber of the other embodiment.

[0136] The liquid processing chamber according to an embodiment of the present invention may include a housing (not shown), a support unit 420, a processing container 430, a liquid supply unit 440, and a heating unit 450.

[0137] The support unit 420 can support the substrate M. The support unit 420 can rotate the substrate M. The support unit 420 can support and rotate the substrate M in the processing space of the processing container 430, which will be described later. The support unit 420 may include a chuck 421, a support pin 422, a support shaft 426, and a drive member 427.

[0138] The chuck 421 may be in the form of a plate with a constant thickness. When viewed from above, the chuck 421 may have a top surface configured in a generally circular shape. The top surface of the chuck 421 may be configured to have an area larger than that of the substrate M. A support pin 422 may be mounted on the chuck 421.

[0139] Support pin 422 can support substrate M. When viewed from above, support pin 422 can have a generally circular shape. When viewed from above, support pin 422 can have a shape with a portion recessed downward corresponding to the corner area of ​​substrate M. Support plate 422 can have a first surface and a second surface. In one embodiment, the first surface can support the bottom portion of the corner area of ​​substrate M. The second surface can face the side of the edge area of ​​substrate M to restrict the lateral movement of substrate M when rotating substrate M. At least one support pin 422 can be provided. In one embodiment, multiple support pins 422 can be provided. The number of support pins 422 can be set to correspond to the number of corner areas of substrate M having a rectangular shape. Support pin 422 can support substrate M spaced apart from the bottom surface of substrate M and the top surface of chuck 421.

[0140] Support shaft 426 can be connected to chuck 421. Support shaft 426 can be positioned below chuck 421. Support shaft 426 can be a hollow shaft. Support shaft 426 can be rotated by drive member 427. Drive member 427 can be a hollow motor. When drive member 427 rotates support shaft 426, chuck 421 connected to support shaft 426 can rotate. Base plate M placed on support pin 422 (support pin is mounted on chuck 421) can rotate together with the rotation of chuck 421.

[0141] The heating unit according to the embodiment of the present invention and according to reference Figure 7 and Figure 8 The heating units of the embodiments of the inventive concept described herein are generally similar, except for the driver 453, shaft 454 and moving member 455, therefore repeated descriptions of the heating units of the embodiments of the inventive concept will be omitted.

[0142] Figure 10 and Figure 11 It schematically shows that in Figure 9 The state where light shines onto the substrate at the heating unit. (Refer to...) Figure 10 and Figure 11 According to an embodiment of the present invention, the heating unit 450 can be positioned above the support unit 420. The heating unit 450 can be fixedly mounted above the support unit 420. The heating unit 450 can be fixedly mounted on the top wall of the housing (not shown). When viewed from above, the heating unit 450 can be fixedly mounted at a position corresponding to the center of the substrate M supported on the support unit 420. The heating unit 450 can be fixed to the top wall of the housing (not shown) by a fixing member (not shown) and tilted based on an axis mounted on the fixing member. The tilting relative to the heating unit 450 can be performed by providing a motor. The tilting angle of the heating unit 450 can be an angle corresponding to the angle from the center of the substrate M supported on the support unit 420 to the outer surface. Accordingly, the irradiation direction of the laser L irradiated by the heating unit 450 can be tilted.

[0143] The controller 30 can control the support unit 450. The controller 30 can control the tilt angle of the heating unit 450. In one embodiment, when... Figure 10 As shown when viewing the support unit 420 from the front, when the second pattern P2 is formed on the left side of the substrate M relative to the support axis 426, the controller 30 can control the heating unit 450 to tilt to the left side of the substrate M on which the second pattern P2 is formed. As another example, when... Figure 11 As shown when viewing the support unit 420 from the front, when the second pattern P2 is formed on the right side of the substrate M relative to the support axis 426, the controller 30 can control the heating unit 450 to tilt to the right side of the substrate M on which the second pattern P2 is formed. The controller 30 can increase or decrease the diameter of the laser L at the beam expander 462 according to the tilt angle of the heating unit 450.

[0144] The substrate processing method according to an embodiment of the present invention will be described in detail below. The substrate processing method described below can be performed using the liquid processing chamber 400 described above. Furthermore, the controller 30 can control the components of the liquid processing chamber 400 so that the liquid processing chamber 400 can perform the substrate processing method described below. For example, the controller 30 can generate control signals for controlling at least one of the support unit 420, the lifting member 436, the liquid supply unit 440, and the heating unit 450, so that the components of the liquid processing chamber 400 can perform the substrate processing method described below.

[0145] Figure 12 A flowchart illustrating a substrate processing method according to an embodiment of the present invention is provided. (Refer to...) Figure 12 The substrate processing method according to the embodiment of the present invention may include a substrate loading step S10, a process preparation step S20, a position correction step S30, an etching step S40, a rinsing step S50, and a substrate removal step S60.

[0146] In substrate loading step S10, the door can be opened at the taking-in / out port formed on the housing (not shown). Furthermore, in substrate loading step S10, the transfer robot 320 can place the substrate M onto the support unit 420. While the transfer robot 320 has placed the substrate M onto the support unit 420, the lifting member 436 can lower the position of the processing container 430.

[0147] Figure 13 Demonstrates the performance of the substrate processing device Figure 12 The state of the process preparation steps. (Refer to...) Figure 13 After loading the substrate M, process preparation step S20 can be performed. In process preparation step S20, it can be confirmed whether the substrate M is accurately positioned on the support pin 422. In process preparation step S20, the position of the substrate M can be confirmed. In process preparation step S20, the position information of the pattern formed on the substrate M can be obtained. In process preparation step S20, the position of the second pattern P2 formed on the substrate M can be confirmed. In process preparation step S20, information on the position of the second pattern P2 formed on the substrate M and the heating position A of the irradiation laser L can be collected.

[0148] Figure 14 Demonstrates the use of execution Figure 12 The state of the substrate processing apparatus during the position correction step. (Refer to...) Figure 14Position correction step S30 is a step of changing the position of the substrate M supported on the support unit 420. Position correction step S30 can change the position of the second pattern P2 formed on the substrate M. Position correction step S30 can move the support unit 420 to change the position of the second pattern P2. According to one embodiment, in position correction step S30, the first drive unit 423 included in the moving stage can move in the first direction X. In addition, in position correction step S30, the second drive unit 424 included in the moving stage can move in the second direction Y. The chuck 421 can move in the first direction X and the second direction Y by the first drive unit 423 and the second drive unit 424. In position correction step S30, the support unit 420 is moved in the first direction X and the second direction Y so that the second pattern P2 is positioned at the heating position A. In position correction step S30, the second pattern P2 is moved to the heating position A based on the position information of the second pattern P2 formed on the substrate M collected in process preparation step S20.

[0149] In etching step S40, the pattern formed on the substrate M can be etched. In etching step S40, the pattern formed on the substrate M can be etched such that the critical dimensions of the first pattern P1 and the second pattern P2 are consistent with each other. Etching step S40 can be a critical dimension correction process for correcting the critical dimension difference between the first pattern P1 and the second pattern P2. Etching step S40 may include a liquid treatment step S41 and a heating step S42.

[0150] Figure 15 Demonstrates the use of execution Figure 12 The state of the substrate processing apparatus in the liquid processing step. Figure 16 This demonstrates the state where the liquid supply to the substrate processing apparatus has been completed in the liquid processing step.

[0151] Reference Figure 15 and Figure 16 The liquid processing step S41 can be as follows: Figure 15The illustrated liquid supply unit 440 supplies etchant (etchant is chemical C) to the substrate M. In the liquid processing step S41, the support unit 420 can rotate the substrate M. However, the inventive concept is not limited thereto, and in the liquid processing step S41, the support unit 420 may not rotate the substrate M. The amount of chemical C supplied in the liquid processing step S41 can be sufficient to form a puddle of chemical C supplied to the substrate M. For example, the amount of chemical C supplied in the liquid processing step S41 can cover the entire top surface of the substrate M, but can be supplied to a degree where the amount of chemical C is minimal or negligible even when it flows down from the substrate M. If necessary, the etchant can be supplied to the entire top surface of the substrate M when the nozzle 441 changes position.

[0152] like Figure 16 As shown, after the liquid supply unit 440 supplies chemical C to the substrate M, the support unit 420 may not rotate. The support unit 420 may be stopped to form a puddle of chemical C supplied to the substrate M.

[0153] Figure 17 Demonstrates the use of execution Figure 12 The state of the substrate processing apparatus during the heating step. (Refer to...) Figure 17 In heating step S42, the heating unit 450 can be moved from the standby position to the heating position A. In heating step S42, the center of the laser irradiator 452 of the heating unit 450 can be moved above the heating position A. In heating step S42, the substrate M can be heated by irradiating it with laser L. In heating step S42, the heating module 460 can heat the substrate M by forming a liquid film on the substrate by irradiating it with laser L. In heating step S42, the laser L can be irradiated onto a specific area of ​​the substrate M. The temperature of the specific area irradiated by laser L can be increased. Therefore, the etching degree of the chemical C in the area irradiated by laser L can be increased. Furthermore, in heating step S42, the laser L can be irradiated onto either the first pattern P1 or the second pattern P2. For example, the laser L can be emitted only onto the second pattern P2 of the first pattern P1 and the second pattern P2. In heating step S42, the laser L can be irradiated onto the second pattern P2 that has been moved to the heating position A.

[0154] Accordingly, the etching capability of chemical C with respect to the second pattern P2 is improved. Consequently, the critical size of the first pattern P1 can be changed from a first width (e.g., 69 nm) to a target critical size (e.g., 70 nm). And the critical size of the second pattern P2 can be changed from a second width (e.g., 68.5 nm) to a target critical size (e.g., 70 nm). That is, by improving the etching capability with respect to certain regions of the substrate M, the critical size deviation of the pattern formed on the substrate M can be minimized.

[0155] A heating position A, which is the specific area irradiated by the laser L, is set at the heating unit 450, and the heating unit 450 can irradiate the substrate M with the laser L only at the designated heating position A. Furthermore, a second pattern P2, which may be formed at different locations for each substrate M, can be moved to the heating position A, which is the specific area irradiated by the laser L, and the laser L can irradiate the second pattern P2 moved to the heating position A. That is, the chuck 421 supporting the substrate M on which the second pattern P2 is formed can be used to position the second pattern P2 at the heating position A by utilizing the moving stage. Accordingly, even if the second pattern P2 is formed in different areas for each substrate M, the laser L can be irradiated only at the specific location to perform precise etching on the second pattern P2.

[0156] Figure 18 Demonstrated execution Figure 12 The state of the substrate processing apparatus during the rinsing step. (Refer to...) Figure 18 In the rinsing step S50, process byproducts generated in the etching step S40 can be removed from the substrate M. In the rinsing step S50, rinsing fluid R can be supplied to the rotating substrate M to remove process byproducts formed on the substrate M. In order to dry the rinsing fluid R remaining on the substrate M as needed, the support unit 420 can rotate the substrate M at a high speed to remove the rinsing fluid R remaining on the substrate M.

[0157] In the substrate removal step S60, the processed substrate M can also be removed from the internal space within the housing (not shown). In the substrate removal step S60, a door can be opened at the loading / unloading port formed at the housing (not shown). Furthermore, in the substrate removal step S60, the transfer robot 320 can unload the substrate M from the support unit 420 and remove the unloaded substrate M from the internal space 412 within the housing (not shown).

[0158] In the embodiments of the above-described inventive concept, the etching rate of the second pattern P2 is increased at a substrate M having a first pattern P1 (which is a monitoring pattern for monitoring the exposure pattern) and a second pattern P2 (which is a condition setting pattern for processing the substrate). However, unlike this, the functions of the first pattern P1 and the second pattern P2 may differ from those functions in the embodiments described above. Furthermore, according to embodiments of the inventive concept, only one of the first pattern P1 or the second pattern P2 is provided, and the etching rate of either the first pattern P1 or the second pattern P2 can be increased. Moreover, according to embodiments of the inventive concept, the same principle applies to increasing the etching rate of specific areas on substrates such as wafers or glass, other than photomasks.

[0159] The effects of this invention are not limited to those described above, and those skilled in the art to which this invention pertains can clearly understand the effects not mentioned from the specification and drawings.

[0160] Although preferred embodiments of the inventive concept have been shown and described so far, the inventive concept is not limited to the specific embodiments described above, and it should be noted that those skilled in the art to which the inventive concept pertains can implement the inventive concept in various ways without departing from the essence of the inventive concept claimed in the claims, and modifications should not be interpreted separately from the technical spirit or prospect of the inventive concept.

Claims

1. A mask processing apparatus, the mask processing apparatus comprising: A support unit configured to support and rotate a mask having a first pattern within its plurality of units and a second pattern outside the regions of the plurality of units; as well as A heating unit, comprising a laser irradiator for directing laser light onto a specific area of ​​the mask supported on the support unit. A controller, configured to control the support unit and the heating unit, and A liquid supply unit configured to supply processing liquid to the mask supported on the support unit; The support unit includes: Support portion, the support portion for supporting the mask; and A movable stage, configured to move the position of the support, and The controller controls the moving stage to change the position of the mask supported on the support, so that the second pattern is positioned in the specific area irradiated by the laser. The process involves performing a method to increase the etching degree of the second pattern by irradiating the second pattern with a laser to raise the temperature of the second pattern, thereby minimizing the deviation between the critical dimensions of the first pattern and the critical dimensions of the second pattern.

2. The mask processing apparatus according to claim 1, wherein, The support unit further includes a rotating part configured to rotate the moving stage, wherein the controller controls the rotating part such that the mask stops rotating when the laser irradiator is irradiating the second pattern with laser light.

3. The mask processing apparatus according to claim 2, in, The controller controls the rotating part to rotate the mask while the liquid supply unit is supplying the processing liquid to the mask.

4. The mask processing apparatus according to claim 1, wherein, The mobile station includes: The base is positioned below the support portion; A first drive unit, the first drive unit being mounted at the base and moving the support unit in a first direction horizontal relative to the ground; and A second drive unit is mounted at the base and moves the support unit in a second direction orthogonal to the first direction and horizontal relative to the ground.

5. The mask processing apparatus according to claim 3, further comprising a container having a processing space for processing the mask and a recovery path for recovering the processing liquid, and in, The support unit supports the mask in the processing space.

6. The mask processing apparatus according to claim 1, wherein, When the laser irradiator irradiates the laser, the position of the laser irradiator is fixed.

7. The mask processing apparatus according to any one of claims 1 to 6, wherein, Regarding the first pattern and the second pattern set at each unit, the first pattern is a monitoring pattern of the exposure pattern formed at the unit, and the second pattern is a condition setting pattern of the mask processing device.

8. A substrate processing apparatus, the substrate processing apparatus comprising: A support unit configured to support and rotate a substrate having a pattern formed thereon; A heating unit configured to heat a specific area of ​​the substrate; wherein the heating unit includes a laser irradiator that irradiates a specific pattern in the pattern with a laser. A controller, configured to control the support unit and the heating unit, and A liquid supply unit for supplying processing liquid to the substrate supported on the support unit; The support unit includes: Support portion, the support portion being used to support the substrate; and A movable stage, configured to change the position of the support, and The controller controls the moving stage to change the position of the substrate supported on the support, so that the specific pattern in the pattern is positioned at the specific area irradiated by the laser. The process involves performing a method to increase the etching degree of the specific pattern by irradiating the specific pattern with a laser to raise the temperature of the specific pattern, thereby minimizing the deviation between the critical size of the specific pattern and the critical size of patterns other than the specific pattern.

9. The substrate processing apparatus according to claim 8, wherein, The support unit further includes a rotating part configured to rotate the movable platform. The controller controls the rotating part so that the substrate does not rotate when the heating unit heats the specific pattern.

10. The substrate processing apparatus according to claim 9, in, The controller controls the rotating part to rotate the substrate while the liquid supply unit is supplying the processing liquid to the substrate.

11. The substrate processing apparatus according to claim 8, wherein, The mobile station includes: The base is positioned below the support portion; A first drive unit, the first drive unit being mounted at the base and moving the support unit in a first direction horizontal relative to the ground; and A second drive unit is mounted at the base and moves the support unit in a second direction orthogonal to the first direction and horizontal relative to the ground.

12. The substrate processing apparatus according to any one of claims 8 to 10, wherein, When the laser irradiator irradiates the laser, the position of the laser irradiator is fixed.

13. The substrate processing apparatus according to claim 8, wherein, The specific pattern is a condition setting pattern of the substrate processing apparatus.

14. A substrate processing method for etching a substrate, the substrate having a first pattern and a second pattern formed thereon, the second pattern being different from the first pattern, the substrate processing method comprising: Loading the substrate and supporting it on the support unit is the substrate loading step; The position of the substrate supported on the support unit is moved, thereby moving the support unit so that the second pattern is positioned in a specific area irradiated by the laser; this is the position correction step. The liquid treatment step involves supplying a processing liquid to the substrate supported on the support unit; and The laser is irradiated from a laser irradiator positioned above the specific area onto the second pattern in the specific area; this is the heating step. Specifically, by irradiating the second pattern with the laser to increase the temperature of the second pattern, the etching degree of the second pattern is increased, thereby minimizing the deviation between the critical size of the first pattern and the critical size of the second pattern.

15. The substrate processing method according to claim 14, wherein, In the liquid processing step, the substrate is rotated.

16. The substrate processing method according to claim 14, wherein, During the heating step, the rotation of the substrate is stopped.

17. The substrate processing method according to claim 14, wherein, The position of the laser irradiator is fixed when the laser irradiator irradiates the laser.

Images