Light emitting display device

Abstract

A light emitting display device is disclosed, including a circuit layer having a thin film transistor and an auxiliary power electrode over a substrate, a protection layer overlapping the circuit layer, a contact portion configured to expose a portion of the auxiliary power electrode, a eave structure disposed over the portion of the auxiliary power electrode and configured to have an undercut region, a pixel electrode disposed over the protection layer and connected to the thin film transistor, a light emitting layer disposed over the pixel electrode, and a common electrode disposed over the light emitting layer and connected to the auxiliary power electrode in the undercut region of the eave structure, wherein the eave structure is made of a single material.

Description

Technical Field

[0001] This disclosure relates to light-emitting display devices. Background Technology

[0002] With the advancement of the information society, the attention and requirements for display devices configured to display information have increased in various ways.

[0003] Among these display devices, light-emitting display devices are classified into inorganic light-emitting display devices and organic light-emitting display devices based on the material of the light-emitting layer. For example, organic light-emitting display devices are self-emissive display devices, in which images are displayed by injecting holes and electrons into the light-emitting layer from an anode electrode for injecting holes and a cathode electrode for injecting electrons, respectively, and by emitting light when the excitons formed by the combination of injected holes and electrons descend from the excited state to the ground state.

[0004] Based on the direction of light emission, light-emitting display devices can be classified as top-emitting, bottom-emitting, or dual-emitting types.

[0005] In the case of top-emitting light-emitting display devices, electrodes with transparent or semi-transparent properties can be used as cathodes to emit light from the light-emitting layer to the top. The cathode electrode has a thin thickness to increase transmittance, thereby increasing resistance. Particularly in the case of large-size light-emitting display devices, the voltage drop becomes more severe as the distance from the voltage supply pads increases, potentially causing problems related to uneven brightness in the display device.

[0006] To address the voltage drop caused by the increased resistance of the cathode electrode, a cathode contact structure with an undercut shape is proposed to electrically connect a separate auxiliary electrode to the cathode electrode.

[0007] However, in the case of a cathode contact structure, different material layers are formed in a stacked structure and undercut shape is formed by selective etching, which creates steps at the interface between different material layers or frequent peeling, thereby reducing the mass production of light-emitting display devices.

[0008] The background information described above may be reserved for the inventor's derivation of the present disclosure, or it may be technical information learned through practicing the embodiments of the present disclosure. However, the background information described above may not be prior art disclosed to the public before the application of the present disclosure. Summary of the Invention

[0009] This disclosure was made in view of the above problems, and the purpose of this disclosure is to provide a light-emitting display device that can form an undercut shape with high peel resistance in the cathode contact area and thus reduce defects in the manufacturing process and improve productivity.

[0010] According to one aspect of this disclosure, the above and other objectives can be achieved by providing a light-emitting display device comprising: a circuit layer having a thin-film transistor and an auxiliary power electrode above a substrate; a protective layer overlaid on the circuit layer; a contact portion configured to expose a portion of the auxiliary power electrode; an eaves structure disposed above a portion of the auxiliary power electrode and configured to have an undercut region; a pixel electrode disposed above the protective layer and connected to the thin-film transistor; a light-emitting layer disposed above the pixel electrode; and a common electrode disposed above the light-emitting layer and connected to the auxiliary power electrode in the undercut region of the eaves structure, wherein the eaves structure is made of a single material.

[0011] According to another aspect of this disclosure, the above and other objectives can be achieved by providing a light-emitting display device comprising: a circuit layer having a thin-film transistor and an auxiliary power electrode above a substrate; a first protective layer stacked on the circuit layer; a second protective layer disposed above the first protective layer; a pixel electrode disposed above the second protective layer and connected to the thin-film transistor; a dam layer disposed above the second protective layer and configured to define an opening at the pixel electrode; a contact portion penetrating the first and second protective layers and the dam layer to expose a portion of the auxiliary power electrode; an eaves structure disposed above the portion of the auxiliary power electrode exposed by the contact portion and configured to include an undercut region; a light-emitting layer disposed above the pixel electrode and the dam layer; and a common electrode disposed above the light-emitting layer and connected to the auxiliary power electrode in the undercut region of the eaves structure.

[0012] According to another aspect of this disclosure, the above and other objectives can be achieved by providing a light-emitting display device comprising: a circuit layer having a thin-film transistor and an auxiliary power electrode above a substrate; a first protective layer stacked on the circuit layer; a second protective layer disposed above the first protective layer; a contact portion configured to expose a portion of the auxiliary power electrode; an eaves structure disposed above the portion of the auxiliary power electrode and configured to have an undercut region; a support pattern between the portion of the auxiliary power electrode and the eaves structure; a pixel electrode disposed above the second protective layer and connected to the thin-film transistor; a light-emitting layer disposed above the pixel electrode; and a common electrode disposed above the light-emitting layer and connected to the auxiliary power electrode in the undercut region of the eaves structure.

[0013] It should be understood that the foregoing general description and the following detailed description of this disclosure are exemplary and illustrative, and are intended to provide further explanation of the claimed disclosure. Attached Figure Description

[0014] The above and other objects, features and advantages of this disclosure will become more clearly understood from the following detailed description taken in conjunction with the accompanying drawings, in which:

[0015] Figure 1 This is a block diagram schematically illustrating a light-emitting display device according to one embodiment of the present disclosure;

[0016] Figure 2 This is a schematic plan view showing the first electrode, diaphragm layer, and contact portion of a sub-pixel in a light-emitting display device according to an embodiment of the present disclosure;

[0017] Figure 3 It is based on the first embodiment of this disclosure. Figure 2 A cross-sectional view of I-I';

[0018] Figure 4 This illustrates a first embodiment according to the present disclosure. Figure 3 A plan view of the contact portion of part "A" in the diagram;

[0019] Figure 5 This illustrates a first embodiment according to the present disclosure. Figure 3 A cross-sectional view of an example of the contact portion of section "A" in the diagram;

[0020] Figure 6 This illustrates a first embodiment according to the present disclosure. Figure 3 A cross-sectional view of another example of the contact portion of section "A" in the diagram;

[0021] Figure 7 It is based on the second embodiment of this disclosure. Figure 2 A cross-sectional view of line I-I';

[0022] Figure 8 This illustrates a second embodiment according to the present disclosure. Figure 7 A cross-sectional view of the contact portion of part "B";

[0023] Figure 9 This illustrates a second embodiment according to the present disclosure. Figure 7 A cross-sectional view of an example of the contact portion of section "B";

[0024] Figure 10 This illustrates a second embodiment according to the present disclosure. Figure 7 A cross-sectional view of another example of the contact portion of section "B";

[0025] Figure 11 It is based on the third embodiment of this disclosure. Figure 2A cross-sectional view of line I-I';

[0026] Figure 12 This illustrates a third embodiment according to the present disclosure. Figure 11 A plan view of the contact portion of part "C";

[0027] Figure 13 This illustrates a third embodiment according to the present disclosure. Figure 11 A cross-sectional view of an example of the contact portion of section "C"; and

[0028] Figure 14 This illustrates a third embodiment according to the present disclosure. Figure 11 A cross-sectional view of another example of the contact portion of the “C” section. Detailed Implementation

[0029] The advantages and features of this disclosure, and its implementation methods, will be illustrated by the following description of embodiments with reference to the accompanying drawings. However, this disclosure may be implemented in various forms and should not be construed as limited to the embodiments set forth herein. Rather, these embodiments are provided to make this disclosure thorough and complete, and to fully convey the scope of this disclosure to those skilled in the art. Furthermore, this disclosure is defined only by the scope of the claims.

[0030] The shapes, dimensions, scales, angles, and quantities disclosed in the accompanying drawings used to describe embodiments of this disclosure are merely examples, and therefore this disclosure is not limited to the details shown. Throughout the specification, the same reference numerals refer to the same elements. In the following description, detailed descriptions of relevant known functions or configurations will be omitted where it is determined that such descriptions would unnecessarily obscure the focus of this disclosure.

[0031] When using the terms "comprising," "having," and "including" as described in this specification, additional parts may be added unless "only" is used. Unless otherwise stated, singular terms may include plural forms.

[0032] When interpreting a component, it is interpreted as including a range of errors, although this is not explicitly described.

[0033] When describing positional relationships, such as when the positional relationship is described as "on," "above," "below," and "following," one or more parts may be arranged between two other parts, unless "exactly" or "directly" is used.

[0034] When describing temporal relationships, such as when time sequence is described as “after,” “following,” “next,” and “before,” discontinuous cases may be included unless “exactly” or “directly” is used.

[0035] It should be understood that although the terms "first," "second," etc., may be used herein to describe various elements, these elements should not be limited by these terms. These terms are used only to distinguish one element from another. For example, without departing from the scope of the invention, a first element may be referred to as a second element, and similarly, a second element may be referred to as a first element.

[0036] The terms “first horizontal axis direction,” “second horizontal axis direction,” and “vertical axis direction” should not be interpreted solely based on the geometric relationship that the directions are perpendicular to each other, but may refer to directions that have a wider directional range within the functionally operable scope of the components of this disclosure.

[0037] The term "at least one" should be understood to include any and all combinations of one or more of the associated listed items. For example, "at least one of the first, second and third items" means a combination of all items derived from two or more of the first, second and third items, as well as the first, second or third item.

[0038] Features of the various embodiments of this disclosure may be coupled or combined with each other in part or in whole, and may interoperate with each other and be technically driven in various ways, as will be fully understood by those skilled in the art. Embodiments of this disclosure may be implemented independently of each other or may be implemented together in an interdependent relationship.

[0039] In the following, preferred embodiments of the light-emitting display device according to the present disclosure will be described in detail with reference to the accompanying drawings. Where possible, the same reference numerals will be used throughout the drawings to refer to the same or similar parts. Since the scale of each element shown in the drawings differs from the actual scale for ease of description, the present disclosure is not limited to the scales shown.

[0040] Figure 1 This is a block diagram schematically illustrating a light-emitting display device according to one embodiment of the present disclosure.

[0041] Reference Figure 1 According to one embodiment of the present disclosure, the light-emitting display device 100 may include a display panel 110, an image processor 120, a timing controller 130, a data driver 140, a scan driver 150, and a power supply 160.

[0042] The display panel 110 can display images corresponding to the data signal DATA provided from the data driver 140, the scan signal provided from the scan driver 150, and the power provided from the power supply 160.

[0043] The display panel 110 may include sub-pixels SP disposed at each intersection of multiple gate lines GL and multiple data lines DL. The structure of the sub-pixels SP may vary depending on the type of display device 100.

[0044] For example, subpixels SP can be formed using top-emitting, bottom-emitting, or dual-emitting methods depending on their structure. Subpixels SP may include red, green, and blue subpixels. Alternatively, subpixels SP may include red, blue, white, and green subpixels. Depending on their light-emitting characteristics, subpixels SP may have one or more other light-emitting regions.

[0045] One or more subpixels SP can constitute a unit pixel. For example, a unit pixel may include red subpixels, green subpixels, and blue subpixels, and the red, green, and blue subpixels may be arranged repeatedly. Alternatively, a unit pixel may include red, green, blue, and white subpixels, wherein the red, green, blue, and white subpixels may be arranged repeatedly, or the red, green, blue, and white subpixels may be arranged in a quadrilateral pattern. In embodiments according to this disclosure, the color type, arrangement type, arrangement order, etc., of the subpixels can be configured in various forms according to the light-emitting characteristics, device lifetime, device specifications, etc., and are therefore not limited thereto.

[0046] The display panel 110 can be divided into a display area AA for displaying images by arranging subpixels SP and a non-display area NA surrounding the display area AA. A scan driver 150 can be disposed on the non-display area NA of the display panel 110. Additionally, the non-display area NA may include a pad area.

[0047] The image processor 120 can output a data enable signal DE along with a data signal DATA provided from an external source. In addition to the data enable signal DE, the image processor 120 can also output one or more of a vertical synchronization signal, a horizontal synchronization signal, and a clock signal.

[0048] The timing controller 130 can receive data signals DATA and drive signals from the image processor 120. The drive signals may include a data enable signal DE. Alternatively, the drive signals may include a vertical synchronization signal, a horizontal synchronization signal, and a clock signal. The timing controller 130 can output a data timing control signal DDC for controlling the operating timing of the data driver 140 and a gate timing control signal GDC for controlling the operating timing of the scan driver 150, based on the drive signals.

[0049] The data driver 140 can respond to the data timing control signal DDC provided from the timing controller 130, convert the data signal DATA provided from the timing controller 130 into a gamma reference voltage by sampling and latching it, and can output the gamma reference voltage.

[0050] The data driver 140 can output a data signal DATA via the data line DL. The data driver 140 can be implemented as an integrated circuit (IC). For example, the data driver 140 can be electrically connected to a pad area disposed in the non-display area NA of the display panel 110 via a flexible circuit film.

[0051] The scan driver 150 can output a scan signal in response to the gate timing control signal GDC provided by the timing controller 130. The scan driver 150 can output the scan signal through the gate line GL. The scan driver 150 can be implemented as an integrated circuit IC or as an in-panel gate-in-package (GIP) solution.

[0052] The power supply 160 can output high-potential voltage and low-potential voltage for driving the display panel 110. The power supply 160 can provide a high-potential voltage to the display panel 110 through a first power line EVDD (or a drive power line) and can provide a low-potential voltage to the display panel 110 through a second power line EVSS (or an auxiliary power line).

[0053] Figure 2 This is a schematic plan view showing the first electrode, diaphragm layer, and contact portion of a sub-pixel in a light-emitting display device according to an embodiment of the present disclosure.

[0054] Combination Figure 1 Reference Figure 2 According to an embodiment of the present disclosure, the display panel 110 of the light-emitting display device 100 can be divided into a display area AA and a non-display area NA, and can include a plurality of sub-pixels SP1, SP2, SP3 and SP4 defined by the intersection between gate line GL and data line DL on the substrate of the display area AA.

[0055] like Figure 2As shown, multiple sub-pixels SP1, SP2, SP3, and SP4 may include a first sub-pixel SP1, a second sub-pixel SP2, a third sub-pixel SP3, and a fourth sub-pixel SP4. For example, the first sub-pixel SP1 may emit red light, the second sub-pixel SP2 may emit green light, the third sub-pixel SP3 may emit blue light, and the fourth sub-pixel SP4 may emit white light, but this is not mandatory. The fourth sub-pixel SP4 for emitting white light can be omitted. Sub-pixels that emit at least two of the following colors of light: red, green, blue, yellow, magenta, and cyan can be configured. Furthermore, the arrangement order of sub-pixels SP1, SP2, SP3, and SP4 can be varied.

[0056] A pixel electrode PXL (e.g., an anode electrode or a first electrode) can be provided in each of the plurality of sub-pixels SP1, SP2, SP3, and SP4. A dam layer BA can be provided on the pixel electrode PXL, the dam layer BA covering (or overlaying) the edge portion of the pixel electrode PXL and defining an opening corresponding to the plurality of sub-pixels SP1, SP2, SP3, and SP4. Then, a light-emitting layer (e.g., an organic light-emitting layer) and a common electrode (e.g., a cathode electrode or a second electrode) can be sequentially stacked on the pixel electrode PXL and the dam layer BA.

[0057] According to embodiments of this disclosure, in order to reduce the resistance of the common electrode disposed above the entire surface of the display panel 110, a separate auxiliary power electrode may be formed of a material with a lower resistance than the common electrode and electrically connected to the common electrode. The embankment BA may define a contact portion CA that exposes a portion of the auxiliary power electrode to electrically connect the auxiliary power electrode and the common electrode to each other.

[0058] A contact portion CA can be formed for each of the four sub-pixels SP1, SP2, SP3, and SP4 that constitute a unit pixel and are parallel to the gate line GL; however, it is not limited to this structure. The contact portion CA can be formed every few sub-pixels. Furthermore, the contact portion CA can be formed along each horizontal line in the direction parallel to the data line DL, but is not limited to this, and can be formed every few horizontal lines.

[0059] First Implementation Method

[0060] Figure 3 It is based on the first embodiment of this disclosure. Figure 2 Sectional view of I-I' Figure 4 This illustrates a first embodiment according to the present disclosure. Figure 3 A plan view of the contact portion of part "A" in the diagram. Figure 5 This illustrates a first embodiment according to the present disclosure. Figure 3A cross-sectional view of an example of the contact portion of section "A" in the diagram, and Figure 6 This illustrates a first embodiment according to the present disclosure. Figure 3 Another example of a cross-sectional view of the contact portion of section "A" in the diagram.

[0061] Reference Figure 3 and Figure 4 The light-emitting display device according to the first embodiment of the present disclosure may include a substrate SUB, a light-shielding layer LS, an auxiliary power line EVSS (or a second power line), a buffer layer BUF, a thin film transistor TR, a storage capacitor Cst, a gate insulating film GI, an insulating separator ILD, an auxiliary power electrode 210, a passivation layer PAS (or a first protective layer), an outer coating OC (or a second protective layer), a light-emitting device ED, a dam layer BA, a contact portion CA, and a roof structure 301.

[0062] The substrate SUB can be a base substrate and can be made of glass or plastic materials. For example, the substrate SUB can be formed from plastic materials such as polyimide (PI), polyethylene terephthalate (PET), polyethylene naphthalate (PEN), polycarbonate (PC), etc., and can have flexible properties.

[0063] On the substrate SUB, circuitry including various signal lines, thin-film transistors (TRs), and storage capacitors (Csts) can be configured for each of the multiple sub-pixels SP1, SP2, SP3, and SP4. Signal lines may include gate lines GL, data lines DL, power lines, and reference lines, and thin-film transistors (TRs) may include driving thin-film transistors, switching thin-film transistors, sensing thin-film transistors, etc.

[0064] A light-shielding layer LS and an auxiliary power line EVSS (or a second power line) can be disposed on the substrate SUB. The light-shielding layer LS can be configured to overlap with the thin-film transistor TR. For example, the light-shielding layer LS can overlap with the active layer ACT of the thin-film transistor TR. In particular, the light-shielding layer LS can be configured to overlap with the channel region of the active layer ACT. The light-shielding layer LS can be used to block external light from entering the active layer ACT. In addition, the auxiliary power line EVSS (e.g., a second power line or a low-potential power line) can be used to apply a low voltage to the common electrode COM (e.g., a cathode electrode or a second electrode). In addition, the auxiliary power line EVSS can be used together with the auxiliary power electrode 210 to reduce the resistance of the common electrode COM.

[0065] The light-shielding layer LS and the auxiliary power lines EVSS can be formed from the same material in the same layer. In this case, the light-shielding layer LS and the auxiliary power lines EVSS can be formed simultaneously using the same process.

[0066] A buffer layer BUF can be disposed on a substrate SUB to cover (or stack) a light-shielding layer LS and auxiliary power lines EVSS. The buffer layer BUF can be formed by stacking a single inorganic layer or multiple inorganic layers. For example, the buffer layer BUF can be formed from a single layer comprising a silicon oxide layer SiOx, a silicon nitride layer SiN, and a silicon oxynitride layer SiON. Alternatively, the buffer layer BUF can be formed from a silicon oxide layer SiOx stacked therein. X The process involves the formation of at least two of the following layers: a silicon nitride layer (SiN) and a silicon oxynitride layer (SiON). A buffer layer (BUF) may be formed on the entire upper surface of the substrate (SUB) to block ions or impurities diffusing from the substrate (SUB) and to prevent moisture from penetrating through the substrate (SUB) into the light-emitting device (ED).

[0067] A thin-film transistor (TFT) TR, a storage capacitor Cst, and an auxiliary power electrode 210 can be disposed on a buffer layer BUF. The TFT TR can be disposed on each of a plurality of sub-pixels SP1, SP2, SP3, and SP4 on the buffer layer BUF. For example, the TFT TR may include an active layer ACT, a gate electrode GA overlapping the active layer ACT (with a gate insulating film GI inserted between the active layer ACT and the gate electrode GA), a first source / drain electrode SD1, and a second source / drain electrode SD2. Furthermore, the storage capacitor Cst can be formed in a triplet structure, wherein a first capacitor electrode using some or all portions of a light-shielding layer LS or an auxiliary power line EVSS, a second capacitor electrode patterned from the same metal material as the gate electrode GA of the TFT TR, and a third capacitor electrode using some or all portions of the auxiliary power electrode 210 overlap, but are not mandatory. If desired, the storage capacitor Cst can be formed in a multilayer structure implemented by various multilayers. The auxiliary power electrode 210 can be electrically connected to the auxiliary power line EVSS through contact holes penetrating the buffer layer BUF and the insulating separator ILD.

[0068] The active layer ACT of the thin-film transistor TR can be made of silicon-based or oxide-based semiconductor materials and can be formed on the buffer layer BUF. The active layer ACT may include a channel region overlapping with the gate electrode GA, and a source / drain region connected to the first source / drain electrode SD1 and the second source / drain electrode SD2.

[0069] The gate insulating film GI can be formed on the active layer ACT. The gate insulating film GI can be disposed in the channel region of the active layer ACT and can insulate the active layer ACT and the gate electrode GA from each other. The gate insulating film GI can be made of inorganic insulating materials, such as silicon oxide layer SiOx, silicon nitride layer SiN, silicon oxynitride layer SiON, or multiples thereof.

[0070] The gate electrode GA can be formed on the gate insulating film GI. The gate electrode GA can be opposite the active layer ACT, with the gate insulating film GI inserted therebetween. The gate electrode GA can be formed from any one or more layers selected from copper (Cu), molybdenum (Mo), aluminum (Al), chromium (Cr), gold (Au), titanium (Ti), nickel (Ni), neodymium (Nd), tantalum (Ta), or tungsten (W). Furthermore, the second capacitor electrode, forming part of the storage capacitor Cst, can be formed on the buffer layer BUF using the same material as the gate electrode GA. In this case, the gate electrode GA of the thin-film transistor TR and the second capacitor electrode of the storage capacitor Cst can be formed simultaneously using the same process.

[0071] An insulating interlayer (ILD) covering the gate electrode GA can be formed on the buffer layer BUF. Furthermore, the insulating interlayer ILD can be formed as a second capacitor electrode covering the storage capacitor Cst. The insulating interlayer ILD can protect the thin-film transistor TR. The insulating interlayer ILD can be formed from inorganic insulating materials. For example, the insulating interlayer ILD can be formed from silicon oxide layers SiOx, silicon nitride layers SiN, silicon oxynitride layers SiON, or multiple layers thereof.

[0072] The first source / drain electrode SD1 and the second source / drain electrode SD2 can be formed on the insulating separator ILD. The insulating separator ILD can be partially removed to make the active layer ACT contact the first source / drain electrode SD1 and the second source / drain electrode SD2. For example, the first source / drain electrode SD1 and the second source / drain electrode SD2 can be electrically connected to the active layer ACT through contact holes through the insulating separator ILD.

[0073] The auxiliary power electrode 210 can be formed on the insulating interlayer ILD. To make contact between the auxiliary power line EVSS and the auxiliary power electrode 210, corresponding areas of the insulating interlayer ILD and the underlying buffer layer BUF can be removed to allow contact between the auxiliary power line EVSS and the auxiliary power electrode 210. For example, the auxiliary power electrode 210 can be electrically connected to the auxiliary power line EVSS through contact holes penetrating the insulating interlayer ILD and the buffer layer BUF. Furthermore, the auxiliary power electrode 210 can be used as the third capacitor electrode of the storage capacitor Cst.

[0074] The first source / drain electrode SD1, the second source / drain electrode SD2, and the auxiliary power electrode 210 can be formed from the same material in the same layer. The first source / drain electrode SD1, the second source / drain electrode SD2, and the auxiliary power electrode 210 can be formed simultaneously using the same process. The first source / drain electrode SD1, the second source / drain electrode SD2, and the auxiliary power electrode 210 can be arranged in a single-layer or multi-layer structure. When each of the first source / drain electrode SD1, the second source / drain electrode SD2, and the auxiliary power electrode 210 is formed in a single-layer structure, it can be formed from one or more materials selected from molybdenum (Mo), aluminum (Al), chromium (Cr), gold (Au), titanium (Ti), nickel (Ni), neodymium (Nd), or copper (Cu). When each of the first source / drain electrode SD1, the second source / drain electrode SD2, and the auxiliary power electrode 210 is formed in a multi-layer structure, a bilayer of molybdenum / aluminum-neodymium, molybdenum / aluminum, titanium / aluminum, or copper / molybdenum-titanium can be used. Alternatively, the first source / drain electrode SD1, the second source / drain electrode SD2, and the auxiliary power electrode 210 may be formed from three layers of molybdenum / aluminum-neodymium / molybdenum, molybdenum / aluminum / molybdenum, titanium / aluminum / titanium, or molybdenum / copper / molybdenum-titanium. However, it is not limited to these structures. The first source / drain electrode SD1, the second source / drain electrode SD2, and the auxiliary power electrode 210 may be formed from a multilayer made of any one of molybdenum (Mo), aluminum (Al), chromium (Cr), gold (Au), titanium (Ti), nickel (Ni), neodymium (Nd), or copper (Cu) and their alloys.

[0075] The thin-film transistor TR, storage capacitor Cst, and auxiliary power electrode 210 disposed on the substrate SUB can form a circuit layer (or a thin-film transistor array layer).

[0076] A passivation layer (or first protective layer) PAS can be disposed on the thin-film transistor TR and the auxiliary power electrode 210. The passivation layer PAS can be formed to cover the thin-film transistor TR and the auxiliary power electrode 210. The passivation layer PAS protects the thin-film transistor TR and can be made of an inorganic insulating material. For example, the passivation layer PAS can be formed from a silicon oxide layer SiOx, a silicon nitride layer SiN, a silicon oxynitride layer SiON, or multiple layers thereof.

[0077] An outer coating OC (or a second protective layer) can be disposed on a passivation layer PAS (or a first protective layer). The outer coating OC can be configured to flatten the steps beneath it and can be formed of an organic insulating material. For example, the outer coating OC can be formed of at least one material selected from photopolymer acrylic, polyimide, benzocyclobutene resin, and acrylate resin.

[0078] A pixel electrode PXL (e.g., an anode electrode or a first electrode) can be disposed on an outer coating OC (or a second protective layer). The pixel electrode PXL can be disposed on the outer coating OC for each of a plurality of sub-pixels SP1, SP2, SP3, and SP4. The pixel electrode PXL can be connected to the first source / drain electrode SD1 of the thin-film transistor TR through contact holes penetrating the outer coating OC and the passivation layer PAS. Alternatively, the pixel electrode PXL can be connected to the second source / drain electrode SD2 of the thin-film transistor TR. A light-emitting layer EL and a common electrode COM can be disposed on the pixel electrode PXL. The pixel electrode PXL, the light-emitting layer EL, and the common electrode COM can constitute a light-emitting device ED.

[0079] The pixel electrode PXL can be formed from a metal, an alloy thereof, or a combination of a metal and a metal oxide. For example, the pixel electrode PXL can be formed in a multilayer structure including a transparent conductive layer and an opaque conductive layer with high reflectivity. The transparent conductive layer of the pixel electrode PXL is made of a material with a relatively large work function value, such as indium tin oxide (ITO) or indium zinc oxide (IZO), and the opaque conductive layer can be formed from any one or more layers selected from silver (Ag), aluminum (Al), copper (Cu), molybdenum (Mo), titanium (Ti), nickel (Ni), chromium (Cr), or tungsten (W). For example, the pixel electrode PXL can be formed in a structure in which transparent conductive layers, opaque conductive layers, and transparent conductive layers are stacked sequentially, or in a structure in which transparent conductive layers and opaque conductive layers are stacked sequentially.

[0080] A dam layer BA can be disposed on the pixel electrode PXL and the outer coating OC. The dam layer BA can cover the edge portion of the pixel electrode PXL and can define the opening of the sub-pixel. The dam layer BA can be made of organic materials such as polyimide, acrylate, benzocyclobutene series resins, etc. The central portion of the pixel electrode PXL exposed by the dam layer BA can be defined as the light-emitting region. In addition, the dam layer BA can define a contact portion CA that exposes a portion of the auxiliary power electrode 210 to electrically connect the auxiliary power electrode 210 and the common electrode COM.

[0081] like Figure 4 As shown, the contact portion CA may expose a portion of the auxiliary power electrode 210 through the passivation layer PAS (or the first protective layer), the outer coating OC (or the second protective layer), and the dam layer BA. The roof structure 301 may be disposed on the auxiliary power electrode 210 exposed by the contact portion CA.

[0082] The eaves structure 301 can be disposed on a portion of the auxiliary power electrode 210 and may include an undercut region. The eaves structure 301 is formed on a portion of the auxiliary power electrode 210 in an island pattern, and the exposed area of ​​the auxiliary power electrode 210 can be formed on the periphery of the eaves structure 301. In the contact portion CA, the auxiliary power electrode 210 exposed on the periphery of the eaves structure 301 can contact and be electrically connected to the common electrode COM (e.g., a cathode electrode or a second electrode). The eaves structure 301 can be made of the same material as the embankment layer BA. The eaves structure 301 and the embankment layer BA can be formed simultaneously using the same process.

[0083] The light-emitting layer EL can be disposed on the pixel electrode PXL, the embankment layer BA, and the roof structure 301. The light-emitting layer EL can be interrupted in the undercut region of the roof structure 301 disposed on the auxiliary power electrode 210 exposed by the contact portion CA. For example, the light-emitting layer EL can be formed of a material with poor step coverage. Therefore, the area of ​​the light-emitting layer EL disposed on the auxiliary power electrode 210 is minimized in size by the roof structure 301, and the light-emitting layer EL is interrupted in the undercut region of the roof structure 301, thereby potentially exposing the auxiliary power electrode 210 disposed below the light-emitting layer EL.

[0084] A common electrode COM (e.g., a cathode electrode or a second electrode) can be disposed on the light-emitting layer EL and the roof structure 301. The common electrode COM can also be disposed on the pixel electrode PXL and the light-emitting layer EL, thereby constituting a light-emitting device ED. The common electrode COM can be formed on the entire surface of the substrate SUB. The common electrode COM can be made of a transparent conductive material such as indium tin oxide (ITO) or indium zinc oxide (IZO), and can be formed of silver (Ag), aluminum (Al), magnesium (Mg), calcium (Ca), or alloys thereof, wherein the common electrode COM is thin enough to transmit light.

[0085] The common electrode COM can contact and be electrically connected to the auxiliary power electrode 210 exposed by the contact portion CA. The common electrode COM is configured to cover the embankment layer BA and can be disposed on the auxiliary power electrode 210 in the undercut region of the eaves structure 301. For example, the common electrode COM can be formed of a material with excellent step coverage. The step coverage of the common electrode COM is greater than that of the light-emitting layer EL formed by vapor deposition, thereby allowing the common electrode COM to be disposed on the upper surface of the auxiliary power electrode 210 exposed to the outside due to the break in the light-emitting layer EL in the undercut region of the eaves structure 301. Therefore, the light-emitting layer EL does not contact the auxiliary power electrode 210 in the undercut region of the eaves structure 301, and the auxiliary power electrode 210 is exposed. However, the common electrode COM can be disposed on the exposed upper surface of the auxiliary power electrode 210 that is not covered by the light-emitting layer EL, and can be in direct contact with and electrically connected to the auxiliary power electrode 210.

[0086] Reference Figure 5 According to an example of a contact portion CA in a light-emitting display device according to a first embodiment of the present disclosure, the contact portion CA may penetrate the passivation layer PAS (or the first protective layer), the outer coating OC (or the second protective layer), and the dam layer BA, thereby exposing a portion of the auxiliary power electrode 210. A roof structure 301 may be provided on the auxiliary power electrode 210 exposed by the contact portion CA.

[0087] According to an example of a first embodiment of this disclosure, an eaves structure 301 comprising an eaves portion 311 and a support portion 321 made of a single material, and a support pattern 331 located between the eaves structure 301 and the auxiliary power electrode 210, may be disposed on the auxiliary power electrode 210 exposed by the contact portion CA. The eaves structure 301 may contact the upper surface of the auxiliary power electrode 210 through the support pattern 331. The eaves structure 301 and the support pattern 331 may be made of different materials. For example, the eaves structure 301 may be made of the same material as the embankment layer BA. The eaves structure 301 and the embankment layer BA may be formed simultaneously using the same process. Additionally, the support pattern 331 may be formed of the same material as the passivation layer PAS (or the first protective layer). The support pattern 331 and the passivation layer PAS may be formed simultaneously using the same process.

[0088] The eaves portion 311 of the eaves structure 301 can be disposed on a portion of the auxiliary power electrode 210. The eaves portion 311 can be disposed on the support pattern 331 and can overlap with a portion of the exposed auxiliary power electrode 210.

[0089] The support portion 321 of the eaves structure 301 can protrude from the lower surface of the eaves portion 311 and can pass through the support pattern 331 to contact the upper surface of the auxiliary power electrode 210.

[0090] The support pattern 331 may include a lower surface having a first width, an upper surface having a second width narrower than the first width, and an inclined surface between the lower and upper surfaces. In this case, the width of the eaves portion 311 may be wider than the first width of the lower surface of the support pattern 331. Since the eaves portion 311 has a width wider than the support pattern 331, an undercut region can be formed below the eaves portion 311. The undercut region may include the side surface of the support pattern 331 below the eaves portion 311.

[0091] According to an example of a first embodiment of this disclosure, the eaves portion 311 of the eaves structure 301 overlaps with a portion of the exposed area of ​​the auxiliary power electrode 210, and an undercut region is formed below the eaves portion 311, so that the light-emitting layer EL may not be disposed on the auxiliary power electrode 210 corresponding to the undercut region. Since the light-emitting layer EL is made of a material without excellent step coverage, the light-emitting layer EL is not disposed in the auxiliary power electrode 210 in the undercut region and is disconnected in the undercut region, thus the auxiliary power electrode 210 disposed below the light-emitting layer EL may be exposed. On the other hand, since the common electrode COM is made of a material with a larger step coverage than the light-emitting layer EL, the common electrode COM can be formed in the auxiliary power electrode 210 in the undercut region and can directly contact the auxiliary power electrode 210 for electrical connection. Therefore, the common electrode COM can be electrically contacted with the auxiliary power electrode 210, thereby reducing voltage drop unevenness caused by resistance deviation of the common electrode COM across the entire display panel.

[0092] According to an example of a first embodiment of this disclosure, the eaves portion 311, the support portion 321, and the support pattern 331 of the eaves structure 301 can be formed of the same material as the passivation layer PAS and the embankment layer BA. For example, the passivation layer PAS can form through-holes through the auxiliary power electrode 210 located beneath it. Furthermore, an organic pattern corresponding to the eaves structure 301 can be disposed on the passivation layer PAS and can be formed of the same material as the embankment layer BA. In this case, the organic pattern can contact the auxiliary power electrode 210 through the through-holes in the passivation layer PAS. The passivation layer PAS can then be etched to expose a portion of the auxiliary power electrode 210 surrounding the organic pattern. Then, a contact portion CA is formed on the passivation layer PAS to expose a portion of the auxiliary power electrode 210, and the eaves structure 301, made of the same material as the embankment layer BA, can be disposed on the portion of the auxiliary power electrode 210 exposed by the contact portion CA, and can be formed in an island pattern. In addition, a support pattern 331 formed by a passivation layer PAS that is retained but not etched can be provided between the eaves structure 301 and the auxiliary power electrode 210.

[0093] According to an example of the contact portion CA of the light-emitting display device according to the first embodiment of the present disclosure, a support pattern 331 may be formed on the auxiliary power electrode 210 exposed by the contact portion CA, and an eaves structure 301 may be configured to directly contact the auxiliary power electrode 210 through the support pattern 331. The eaves portion 311 of the eaves structure 301 is formed to have a width wider than the width of the support pattern 331, and the eaves structure 301 may include an undercut region below the eaves portion 311. Therefore, the eaves structure 301 can be integrally formed from a single material, such that the eaves portion 311 forming the undercut region and the support portion 321 directly contacting the auxiliary power electrode 210 are formed from a single material, thereby improving the adhesion of the eaves structure 301 and preventing damage such as cracks, thus forming an undercut shape with high peel resistance.

[0094] Reference Figure 6 According to another example of the contact portion CA of the light-emitting display according to the first embodiment of this disclosure, the contact portion CA may penetrate the passivation layer (or first protective layer), the outer coating OC (or second protective layer), and the dam layer BA to expose a portion of the auxiliary power electrode 210. The roof structure 301' may be disposed on the auxiliary power electrode 210 exposed by the contact portion CA.

[0095] According to another example of the first embodiment of this disclosure, an eaves structure 301' comprising an eaves portion 311' and a support portion 321' made of a single material can be disposed on an auxiliary power electrode 210 exposed by a contact portion CA. For example, the eaves structure 301' can be made of the same material as the embankment layer BA. The eaves structure 301' and the embankment layer BA can be formed simultaneously using the same process.

[0096] The eaves portion 311' of the eaves structure 301' can be disposed on a portion of the auxiliary power electrode 210. The eaves portion 311' can overlap with a portion of the exposed auxiliary power electrode 210.

[0097] The support portion 321' of the eaves structure 301' can protrude from the lower surface of the eaves portion 311' and can contact the upper surface of the auxiliary power electrode 210.

[0098] The support portion 321' may include an inclined surface with an inverted conical shape, the upper width of which protrudes from the lower surface of the eaves portion 311' being wider than the lower width of the upper surface of its contact auxiliary power electrode 210. Because the eaves portion 311' has a wider width compared to the support portion 321', an undercut region can be formed below the eaves portion 311'. This undercut region may include the lower portion of the eaves portion 311' and the side surface of the support portion 321'.

[0099] According to another example of the first embodiment of this disclosure, the eaves portion 311' of the eaves structure 301' overlaps with a portion of the exposed portion of the auxiliary power electrode 210, and forms below it the same as described above. Figure 5 The roof structure 301 of an example of the first embodiment shown has a relatively deep undercut region, which allows for an increase in the exposed portion of the auxiliary power electrode 210 not covered by the light-emitting layer EL. Therefore, the contact area between the common electrode COM and the auxiliary power electrode 210 can be increased.

[0100] According to another example of the first embodiment of this disclosure, the eaves portion 311' and the support portion 321' of the eaves structure 301' can be formed of the same material as the embankment layer BA. For example, a passivation layer PAS can be formed with through-holes through the underlying auxiliary power electrode 210. Then, an organic pattern corresponding to the eaves structure 301' can be formed on the passivation layer PAS and can be made of the same material as the embankment layer BA. At this time, the organic pattern can contact the auxiliary power electrode 210 through the through-holes of the passivation layer PAS. Then, the passivation layer PAS can be etched to expose a portion of the auxiliary power electrode 210 around the organic pattern. Then, a contact portion CA exposing a portion of the auxiliary power electrode 210 can be formed on the passivation layer PAS, and the eaves structure 301' made of the same material as the embankment layer BA can be formed in an island pattern on the portion of the auxiliary power electrode 210 exposed by the contact portion CA. Alternatively, the passivation layer PAS can be completely etched between the eaves structure 301' and the auxiliary power electrode 210 to form the support portion 321' of the eaves structure 301'.

[0101] According to another example of the contact portion CA of the light-emitting display device according to the first embodiment of this disclosure, an eaves structure 301' comprising a support portion 321' in direct contact with the auxiliary power electrode 210 and an eaves portion 311' forming an undercut region can be formed on the auxiliary power electrode 210 exposed by the contact portion CA. Therefore, since the eaves portion 311' and the support portion 321' are formed integrally from a single material, the adhesive strength of the eaves structure 301' can be improved and damage such as cracks can be prevented, thereby forming an undercut shape with high peel resistance.

[0102] Second Implementation Method

[0103] Figure 7 It is based on the second embodiment of this disclosure. Figure 2 A cross-sectional view of line I-I'. Figure 8 This illustrates a second embodiment according to the present disclosure. Figure 7 A cross-sectional view of the contact portion of part "B". Figure 9 This illustrates a second embodiment according to the present disclosure. Figure 7 A cross-sectional view of an example of the contact portion of section "B", and Figure 10 This illustrates a second embodiment according to the present disclosure. Figure 7 A cross-sectional view of another example of the contact portion of part "B". In the description of the second embodiment, descriptions of configurations identical to those in the first embodiment will be omitted.

[0104] Reference Figure 7 and Figure 8The light-emitting display device according to the second embodiment of the present disclosure may include a substrate SUB, a light-shielding layer LS, an auxiliary power line EVSS (or a second power line), a buffer layer BUF, a thin film transistor TR, a storage capacitor Cst, a gate insulating film GI, an insulating separator ILD, an auxiliary power electrode 210, a passivation layer PAS (or a first protective layer), an outer coating OC (or a second protective layer), a light-emitting device ED, a dam layer BA, a contact portion CA, and a roof structure 302.

[0105] like Figure 8 As shown, the contact portion CA may expose a portion of the auxiliary power electrode 210 through the passivation layer PAS (or the first protective layer), the outer coating OC (or the second protective layer), and the dam layer BA. The roof structure 302 may be disposed on the auxiliary power electrode 210 exposed by the contact portion CA.

[0106] The eaves structure 302 can be disposed on a portion of the auxiliary power electrode 210 and may include an undercut region. The eaves structure 302 is formed in an island pattern on a portion of the auxiliary power electrode 210, and the exposed area of ​​the auxiliary power electrode 210 can be formed on the periphery of the eaves structure 302. In the contact portion CA, the auxiliary power electrode 210 exposed on the periphery of the eaves structure 302 can contact and be electrically connected to the common electrode COM (e.g., a cathode electrode or a second electrode). The eaves structure 302 can be made of the same material as the outer coating OC. The eaves structure 302 and the outer coating OC can be formed simultaneously using the same process.

[0107] The light-emitting layer EL can be disposed on the pixel electrode PXL, the embankment layer BA, and the roof structure 302. The light-emitting layer EL can be interrupted in the undercut region of the roof structure 302 disposed on the auxiliary power electrode 210 exposed by the contact portion CA. For example, the light-emitting layer EL can be formed of a material with poor step coverage. Therefore, the area of ​​the light-emitting layer EL disposed on the auxiliary power electrode 210 is minimized in size by the roof structure 302, and the light-emitting layer EL is interrupted in the undercut region of the roof structure 302, thereby potentially exposing the auxiliary power electrode 210 disposed below the light-emitting layer EL.

[0108] A common electrode COM (e.g., a cathode electrode or a second electrode) can be disposed on the light-emitting layer EL and the roof structure 302. The common electrode COM can also be disposed on the pixel electrode PXL and the light-emitting layer EL, thereby constituting a light-emitting device ED. The common electrode COM can be formed on the entire surface of the substrate SUB. The common electrode COM can be made of a transparent conductive material such as indium tin oxide (ITO) or indium zinc oxide (IZO), and can be formed of silver (Ag), aluminum (Al), magnesium (Mg), calcium (Ca), or alloys thereof, wherein the common electrode COM is thin enough to transmit light.

[0109] The common electrode COM can contact and be electrically connected to the auxiliary power electrode 210 exposed by the contact portion CA. The common electrode COM is configured to cover the embankment layer BA and can be disposed on the auxiliary power electrode 210 in the undercut region of the eaves structure 302. For example, the common electrode COM can be formed of a material with excellent step coverage. The step coverage of the common electrode COM is greater than that of the light-emitting layer EL formed by vapor deposition, thereby allowing the common electrode COM to be disposed on the upper surface of the auxiliary power electrode 210 exposed to the outside due to the break in the light-emitting layer EL in the undercut region of the eaves structure 302. Therefore, the light-emitting layer EL does not contact the auxiliary power electrode 210 in the undercut region of the eaves structure 302, and the auxiliary power electrode 210 is exposed. However, the common electrode COM can be disposed on the exposed upper surface of the auxiliary power electrode 210 that is not covered by the light-emitting layer EL, and can be in direct contact with and electrically connected to the auxiliary power electrode 210.

[0110] Reference Figure 9 According to an example of a contact portion CA in a light-emitting display device according to a second embodiment of the present disclosure, the contact portion CA may penetrate the passivation layer PAS (or the first protective layer), the outer coating OC (or the second protective layer), and the dam layer BA, thereby exposing a portion of the auxiliary power electrode 210. The roof structure 302 may be provided on the auxiliary power electrode 210 exposed by the contact portion CA.

[0111] According to an example of a second embodiment of this disclosure, an eaves structure 302 comprising an eaves portion 312 and a support portion 322 made of a single material, and a support pattern 332 located between the eaves structure 302 and the auxiliary power electrode 210, may be disposed on the auxiliary power electrode 210 exposed by the contact portion CA. The eaves structure 302 may contact the upper surface of the auxiliary power electrode 210 through the support pattern 332. The eaves structure 302 and the support pattern 332 may be made of different materials. For example, the eaves structure 302 may be made of the same material as the outer coating OC. The eaves structure 302 and the outer coating OC may be formed simultaneously using the same process. Additionally, the support pattern 332 may be formed of the same material as the passivation layer PAS (or the first protective layer). The support pattern 332 and the passivation layer PAS may be formed simultaneously using the same process.

[0112] The eaves portion 312 of the eaves structure 302 can be disposed on a portion of the auxiliary power electrode 210. The eaves portion 312 can be disposed on the support pattern 332 and can overlap with a portion of the exposed auxiliary power electrode 210.

[0113] The support portion 322 of the eaves structure 302 can protrude from the lower surface of the eaves portion 312 and can pass through the support pattern 332 to contact the upper surface of the auxiliary power electrode 210.

[0114] The support pattern 332 may include a lower surface having a first width, an upper surface having a second width narrower than the first width, and an inclined surface between the lower and upper surfaces. In this case, the width of the eaves portion 312 may be wider than the first width of the lower surface of the support pattern 332. Since the eaves portion 312 has a width wider than the support pattern 332, an undercut region can be formed below the eaves portion 312. The undercut region may include the side surface of the support pattern 332 below the eaves portion 312.

[0115] According to an example of a second embodiment of this disclosure, the eaves portion 312 of the eaves structure 302 overlaps with a portion of the exposed area of ​​the auxiliary power electrode 210, and an undercut region is formed below the eaves portion 312, so that the light-emitting layer EL may not be disposed on the auxiliary power electrode 210 corresponding to the undercut region. Since the light-emitting layer EL is made of a material without excellent step coverage, the light-emitting layer EL is not disposed in the auxiliary power electrode 210 in the undercut region and is disconnected in the undercut region, thus the auxiliary power electrode 210 disposed below the light-emitting layer EL may be exposed. On the other hand, since the common electrode COM is made of a material with a larger step coverage than the light-emitting layer EL, the common electrode COM can be formed in the auxiliary power electrode 210 in the undercut region and can directly contact the auxiliary power electrode 210 for electrical connection. Therefore, the common electrode COM can be electrically contacted with the auxiliary power electrode 210, thereby reducing voltage drop unevenness caused by resistance deviation of the common electrode COM across the entire display panel.

[0116] According to an example of a second embodiment of this disclosure, the eaves portion 312, the support portion 322, and the support pattern 332 of the eaves structure 302 can be formed of the same material as the passivation layer PAS and the outer coating OC. For example, the passivation layer PAS can form through-holes through the auxiliary power electrode 210 located beneath it. Furthermore, an organic pattern corresponding to the eaves structure 302 can be disposed on the passivation layer PAS and can be formed of the same material as the outer coating OC. In this case, the organic pattern can contact the auxiliary power electrode 210 through the through-holes in the passivation layer PAS. The passivation layer PAS can then be etched to expose a portion of the auxiliary power electrode 210 surrounding the organic pattern. Then, a contact portion CA is formed on the passivation layer PAS to expose a portion of the auxiliary power electrode 210, and the eaves structure 302, made of the same material as the outer coating OC, can be disposed on the portion of the auxiliary power electrode 210 exposed by the contact portion CA, and can be formed in an island pattern. In addition, a support pattern 332 formed by a passivation layer PAS that is retained but not etched can be provided between the eaves structure 302 and the auxiliary power electrode 210.

[0117] According to an example of the contact portion CA of the light-emitting display device according to the second embodiment of this disclosure, a support pattern 332 may be formed on the auxiliary power electrode 210 exposed by the contact portion CA, and an eaves structure 302 may be configured to directly contact the auxiliary power electrode 210 through the support pattern 332. The eaves portion 312 of the eaves structure 302 is formed to have a width wider than the width of the support pattern 332, and the eaves structure 302 may include an undercut region below the eaves portion 312. Therefore, the eaves structure 302 can be integrally formed from a single material, such that the eaves portion 312 forming the undercut region and the support portion 322 directly contacting the auxiliary power electrode 210 are formed from a single material, thereby improving the adhesion of the eaves structure 302 and preventing damage such as cracks, thus forming an undercut shape with high peel resistance.

[0118] Reference Figure 10 According to another example of the contact portion CA of the light-emitting display according to the second embodiment of this disclosure, the contact portion CA may penetrate the passivation layer (or first protective layer), the outer coating OC (or second protective layer), and the dam layer BA to expose a portion of the auxiliary power electrode 210. The roof structure 302' may be disposed on the auxiliary power electrode 210 exposed by the contact portion CA.

[0119] According to another example of the second embodiment of this disclosure, an eaves structure 302' comprising an eaves portion 312' and a support portion 322' made of a single material can be disposed on an auxiliary power electrode 210 exposed by a contact portion CA. For example, the eaves structure 302' can be made of the same material as the outer coating OC. The eaves structure 302' and the outer coating OC can be formed simultaneously using the same process.

[0120] The eaves portion 312' of the eaves structure 302' can be disposed on a portion of the auxiliary power electrode 210. The eaves portion 312' can overlap with a portion of the exposed auxiliary power electrode 210.

[0121] The support portion 322' of the eaves structure 302' can protrude from the lower surface of the eaves portion 312' and can contact the upper surface of the auxiliary power electrode 210.

[0122] The support portion 322' may include an inclined surface with an inverted conical shape, the upper width of which protrudes from the lower surface of the eaves portion 312' being wider than the lower width of the upper surface of its contact auxiliary power electrode 210. Because the eaves portion 312' has a wider width compared to the support portion 322', an undercut region can be formed below the eaves portion 312'. This undercut region may include the lower portion of the eaves portion 312' and the side surfaces of the support portion 322'.

[0123] According to another example of the second embodiment of this disclosure, the eaves portion 312' of the eaves structure 302' overlaps with a portion of the exposed portion of the auxiliary power electrode 210, and forms below it the aforementioned... Figure 9 The roof structure 302 of one example of the second embodiment shown has a relatively deep undercut region, which allows for an increase in the exposed portion of the auxiliary power electrode 210 not covered by the light-emitting layer EL. Therefore, the contact area between the common electrode COM and the auxiliary power electrode 210 can be increased.

[0124] According to another example of the second embodiment of this disclosure, the eaves portion 312' and the support portion 322' of the eaves structure 302' can be formed of the same material as the outer coating OC. For example, the passivation layer PAS can be formed with through-holes through the underlying auxiliary power electrode 210. Then, an organic pattern corresponding to the eaves structure 302' can be formed on the passivation layer PAS and can be made of the same material as the outer coating OC. At this time, the organic pattern can contact the auxiliary power electrode 210 through the through-holes of the passivation layer PAS. Then, the passivation layer PAS can be etched to expose a portion of the auxiliary power electrode 210 around the organic pattern. Then, the contact portion CA exposing a portion of the auxiliary power electrode 210 can be formed on the passivation layer PAS, and the eaves structure 302' made of the same material as the outer coating OC can be formed in an island pattern on the portion of the auxiliary power electrode 210 exposed by the contact portion CA. Alternatively, the passivation layer PAS can be completely etched between the eaves structure 302' and the auxiliary power electrode 210 to form the support portion 322' of the eaves structure 302'.

[0125] According to another example of the contact portion CA of the light-emitting display device according to the second embodiment of this disclosure, an eaves structure 302' comprising a support portion 322' in direct contact with the auxiliary power electrode 210 and an eaves portion 312' forming an undercut region can be formed on the auxiliary power electrode 210 exposed by the contact portion CA. Therefore, since the eaves portion 312' and the support portion 322' are formed integrally from a single material, the adhesive strength of the eaves structure 302' can be improved and damage such as cracks can be prevented, thereby forming an undercut shape with high peel resistance.

[0126] Third Implementation Method

[0127] Figure 11 It is based on the third embodiment of this disclosure. Figure 2 A cross-sectional view of line I-I'. Figure 12 This illustrates a third embodiment according to the present disclosure. Figure 11 A plan view of the contact portion of part "C". Figure 13 This illustrates a third embodiment according to the present disclosure. Figure 11 A cross-sectional view of an example of the contact portion of the "C" section, and Figure 14 This illustrates a third embodiment according to the present disclosure. Figure 11 A cross-sectional view of another example of the contact portion of the "C" section. In the description of the third embodiment, descriptions of configurations identical to those in the first and second embodiments will be omitted.

[0128] Reference Figure 11 and Figure 12The light-emitting display device according to the third embodiment of the present disclosure may include a substrate SUB, a light-shielding layer LS, an auxiliary power line EVSS (or a second power line), a buffer layer BUF, a thin film transistor TR, a storage capacitor Cst, a gate insulating film GI, an insulating separator ILD, an auxiliary power electrode 210, a passivation layer PAS (or a first protective layer), an outer coating OC (or a second protective layer), a light-emitting device ED, a dam layer BA, a contact portion CA, and a roof structure 303.

[0129] like Figure 12 As shown, the contact portion CA may expose a portion of the auxiliary power electrode 210 through the passivation layer PAS (or the first protective layer), the outer coating OC (or the second protective layer), and the dam layer BA. The roof structure 303 may be disposed on the auxiliary power electrode 210 exposed by the contact portion CA.

[0130] The eaves structure 303 can be disposed on a portion of the auxiliary power electrode 210 and may include an undercut region. The eaves structure 303 is formed in an island pattern on a portion of the auxiliary power electrode 210, and the exposed area of ​​the auxiliary power electrode 210 can be formed on the periphery of the eaves structure 303. In the contact portion CA, the auxiliary power electrode 210 exposed on the periphery of the eaves structure 303 can contact and be electrically connected to the common electrode COM (e.g., a cathode electrode or a second electrode). The eaves structure 303 can be made of the same material as the pixel electrode PXL. The eaves structure 303 and the pixel electrode PXL can be formed simultaneously using the same process.

[0131] The light-emitting layer EL can be disposed on the pixel electrode PXL, the embankment layer BA, and the roof structure 303. The light-emitting layer EL can be interrupted in the undercut region of the roof structure 303 disposed on the auxiliary power electrode 210 exposed by the contact portion CA. For example, the light-emitting layer EL can be formed of a material with poor step coverage. Therefore, the area of ​​the light-emitting layer EL disposed on the auxiliary power electrode 210 is minimized in size by the roof structure 303, and the light-emitting layer EL is interrupted in the undercut region of the roof structure 303, thereby potentially exposing the auxiliary power electrode 210 disposed below the light-emitting layer EL.

[0132] A common electrode COM (e.g., a cathode electrode or a second electrode) can be disposed on the light-emitting layer EL and the roof structure 303. The common electrode COM can also be disposed on the pixel electrode PXL and the light-emitting layer EL, thereby constituting a light-emitting device ED. The common electrode COM can be formed on the entire surface of the substrate SUB. The common electrode COM can be made of a transparent conductive material such as indium tin oxide (ITO) or indium zinc oxide (IZO), and can be formed of silver (Ag), aluminum (Al), magnesium (Mg), calcium (Ca), or alloys thereof, wherein the common electrode COM is thin enough to transmit light.

[0133] The common electrode COM can contact and be electrically connected to the auxiliary power electrode 210 exposed by the contact portion CA. The common electrode COM is configured to cover the embankment layer BA and can be disposed on the auxiliary power electrode 210 in the undercut region of the eaves structure 303. For example, the common electrode COM can be formed of a material with excellent step coverage. The step coverage of the common electrode COM is greater than that of the light-emitting layer EL formed by vapor deposition, thereby allowing the common electrode COM to be disposed on the upper surface of the auxiliary power electrode 210 exposed to the outside due to the break in the light-emitting layer EL in the undercut region of the eaves structure 303. Therefore, the light-emitting layer EL does not contact the auxiliary power electrode 210 in the undercut region of the eaves structure 303, and the auxiliary power electrode 210 is exposed. However, the common electrode COM can be disposed on the exposed upper surface of the auxiliary power electrode 210 that is not covered by the light-emitting layer EL, and can be in direct contact with and electrically connected to the auxiliary power electrode 210.

[0134] Reference Figure 13 According to an example of a contact portion CA in a light-emitting display device according to a third embodiment of the present disclosure, the contact portion CA may penetrate the passivation layer PAS (or the first protective layer), the outer coating OC (or the second protective layer), and the dam layer BA, thereby exposing a portion of the auxiliary power electrode 210. A roof structure 303 may be provided on the auxiliary power electrode 210 exposed by the contact portion CA.

[0135] According to an example of a third embodiment of this disclosure, an eaves structure 303 comprising an eaves portion 313 and a support portion 323 made of a single material, and a support pattern 333 located between the eaves structure 303 and the auxiliary power electrode 210, can be disposed on the auxiliary power electrode 210 exposed by the contact portion CA. The eaves structure 303 can contact the upper surface of the auxiliary power electrode 210 through the support pattern 333. The eaves structure 303 and the support pattern 333 can be made of different materials. For example, the eaves structure 303 can be made of the same material as the pixel electrode PXL. The eaves structure 303 and the pixel electrode PXL can be formed simultaneously using the same process. Additionally, the support pattern 333 can be formed of the same material as the passivation layer PAS (or the first protective layer). The support pattern 333 and the passivation layer PAS can be formed simultaneously using the same process.

[0136] The eaves portion 313 of the eaves structure 303 can be disposed on a portion of the auxiliary power electrode 210. The eaves portion 313 can be disposed on the support pattern 333 and can overlap with a portion of the exposed auxiliary power electrode 210.

[0137] The support portion 323 of the eaves structure 303 can protrude from the lower surface of the eaves portion 313 and can pass through the support pattern 333 to contact the upper surface of the auxiliary power electrode 210.

[0138] The support pattern 333 may include a lower surface having a first width, an upper surface having a second width narrower than the first width, and an inclined surface between the lower and upper surfaces. In this case, the width of the eaves portion 313 may be wider than the first width of the lower surface of the support pattern 333. Since the eaves portion 313 has a width wider than the support pattern 333, an undercut region can be formed below the eaves portion 313. The undercut region may include the side surface of the support pattern 333 below the eaves portion 313.

[0139] According to an example of a third embodiment of this disclosure, the eaves portion 313 of the eaves structure 303 overlaps with a portion of the exposed area of ​​the auxiliary power electrode 210, and an undercut region is formed below the eaves portion 313, allowing the light-emitting layer EL to be omitted from the auxiliary power electrode 210 corresponding to the undercut region. Since the light-emitting layer EL is made of a material without excellent step coverage, it is not disposed in the auxiliary power electrode 210 in the undercut region and is disconnected therefrom, thus potentially exposing the auxiliary power electrode 210 disposed below it. On the other hand, since the common electrode COM is made of a material with a larger step coverage than the light-emitting layer EL, it can be formed in the auxiliary power electrode 210 in the undercut region and can directly contact and electrically connect with the auxiliary power electrode 210. Therefore, the common electrode COM can be electrically contacted with the auxiliary power electrode 210, thereby reducing voltage drop unevenness caused by resistance deviation of the common electrode COM across the entire display panel.

[0140] According to the third embodiment of this disclosure, the eaves portion 313, the support portion 323, and the support pattern 333 in the eaves structure 303 can be formed of the same material as the passivation layer PAS and the pixel electrode PXL. For example, the passivation layer PAS can form a through-hole that passes through the underlying auxiliary power electrode 210. A metal pattern corresponding to the eaves structure 303 can be provided on the passivation layer PAS and can be formed of the same material as the pixel electrode PXL. At this time, the metal pattern can contact the auxiliary power electrode 210 through the through-hole of the passivation layer PAS. Then, the passivation layer PAS can be etched to expose a portion of the auxiliary power electrode 210 around the metal pattern. Then, a contact portion CA is formed on the passivation layer PAS to expose a portion of the auxiliary power electrode 210, and the eaves structure 303, made of the same material as the pixel electrode PXL, can be provided on the portion of the auxiliary power electrode 210 exposed by the contact portion CA, and can be formed in an island pattern. Furthermore, a support pattern 333 formed of the passivation layer PAS that is retained and not etched can be provided between the eaves structure 303 and the auxiliary power electrode 210.

[0141] According to an example of the contact portion CA of the light-emitting display device according to the third embodiment of this disclosure, a support pattern 333 may be formed on the auxiliary power electrode 210 exposed by the contact portion CA, and an eaves structure 303 may be configured to directly contact the auxiliary power electrode 210 through the support pattern 333. The eaves portion 313 of the eaves structure 303 is formed to have a width wider than the width of the support pattern 333, and the eaves structure 303 may include an undercut region below the eaves portion 313. Therefore, the eaves structure 303 can be integrally formed from a single material, such that the eaves portion 313 forming the undercut region and the support portion 323 directly contacting the auxiliary power electrode 210 are formed from a single material, thereby improving the adhesion of the eaves structure 303 and preventing damage such as cracks, thus forming an undercut shape with high peel resistance.

[0142] Reference Figure 14 According to another example of the contact portion CA of the light-emitting display according to the third embodiment of this disclosure, the contact portion CA may penetrate the passivation layer (or first protective layer), the outer coating OC (or second protective layer), and the dam layer BA to expose a portion of the auxiliary power electrode 210. The roof structure 303' may be disposed on the auxiliary power electrode 210 exposed by the contact portion CA.

[0143] According to another example of the third embodiment of this disclosure, an eaves structure 303' comprising an eaves portion 313' and a support portion 323' made of a single material can be disposed on an auxiliary power electrode 210 exposed by a contact portion CA. For example, the eaves structure 303' can be made of the same material as the pixel electrode PXL. The eaves structure 303' and the pixel electrode PXL can be formed simultaneously using the same process.

[0144] The eaves portion 313' of the eaves structure 303' can be disposed on a portion of the auxiliary power electrode 210. The eaves portion 313' can overlap with a portion of the exposed auxiliary power electrode 210.

[0145] The support portion 323' of the eaves structure 303' can protrude from the lower surface of the eaves portion 313' and can contact the upper surface of the auxiliary power electrode 210.

[0146] The support portion 323' may include an inclined surface with an inverted conical shape, the upper width of which protrudes from the lower surface of the eaves portion 313' being wider than the lower width of the upper surface of its contact auxiliary power electrode 210. Because the eaves portion 313' has a wider width compared to the support portion 323', an undercut region can be formed below the eaves portion 313'. This undercut region may include the lower portion of the eaves portion 313' and the side surface of the support portion 323'.

[0147] According to another example of the third embodiment of this disclosure, the eaves portion 313' of the eaves structure 303' overlaps with a portion of the exposed portion of the auxiliary power electrode 210, and forms below it an extension of the aforementioned embodiment. Figure 13 The roof structure 303 of one example of the third embodiment shown has a relatively deep undercut region, which allows for an increase in the exposed portion of the auxiliary power electrode 210 not covered by the light-emitting layer EL. Therefore, the contact area between the common electrode COM and the auxiliary power electrode 210 can be increased.

[0148] According to another example of the third embodiment of this disclosure, the eaves portion 313' and the support portion 323' of the eaves structure 303' can be formed of the same material as the pixel electrode PXL. For example, the passivation layer PAS can be formed with through-holes through the underlying auxiliary power electrode 210. A metal pattern corresponding to the eaves structure 303' can be disposed on the passivation layer PAS and can be formed of the same material as the pixel electrode PXL. At this time, the metal pattern can contact the auxiliary power electrode 210 through the through-holes of the passivation layer PAS. Then, the passivation layer PAS can be etched to expose a portion of the auxiliary power electrode 210 around the metal pattern. Then, the contact portion CA exposing a portion of the auxiliary power electrode 210 can be formed on the passivation layer PAS, and the eaves structure 303' made of the same material as the pixel electrode PXL can be formed in an island pattern on the portion of the auxiliary power electrode 210 exposed by the contact portion CA. Furthermore, the passivation layer PAS can be completely etched between the eaves structure 303' and the auxiliary power electrode 210 to form the support portion 323' of the eaves structure 303'.

[0149] According to another example of the contact portion CA of the light-emitting display device according to the third embodiment of this disclosure, an eaves structure 303' comprising a support portion 323' in direct contact with the auxiliary power electrode 210 and an eaves portion 313' forming an undercut region can be formed on the auxiliary power electrode 210 exposed by the contact portion CA. Therefore, since the eaves portion 313' and the support portion 323' are formed integrally from a single material, the adhesive strength of the eaves structure 303' can be improved and damage such as cracks can be prevented, thereby forming an undercut shape with high peel resistance.

[0150] The light-emitting display device according to embodiments of this disclosure can be described as follows.

[0151] An embodiment of the light-emitting display device according to this disclosure may include: a circuit layer having a thin-film transistor and an auxiliary power electrode above a substrate; a protective layer overlying the circuit layer; a contact portion configured to expose a portion of the auxiliary power electrode; an eaves structure disposed above a portion of the auxiliary power electrode and configured to have an undercut region; a pixel electrode disposed above the protective layer and connected to the thin-film transistor; a light-emitting layer disposed above the pixel electrode; and a common electrode disposed above the light-emitting layer and connected to the auxiliary power electrode in the undercut region of the eaves structure, wherein the eaves structure is made of a single material.

[0152] In a light-emitting display device according to an embodiment of the present disclosure, the eaves structure may include: an eaves portion disposed above a portion of the auxiliary power electrode; and a support portion protruding from the lower surface of the eaves portion and contacting the upper surface of the auxiliary power electrode, wherein the undercut region corresponds to the lower part of the eaves portion.

[0153] In a light-emitting display device according to an embodiment of the present disclosure, the support portion may include an inclined surface having an inverted conical shape, the upper width of the inverted conical shape being wider than the lower width of the inverted conical shape, the upper width protruding from the lower surface of the eaves portion, and the lower width contacting the upper surface of the auxiliary power electrode.

[0154] In a light-emitting display device according to an embodiment of the present disclosure, the eaves structure may be formed in an island pattern above a portion of the auxiliary power electrode, and the portion of the auxiliary power electrode exposed by the contact portion may include the exposed portion of the auxiliary power electrode on the periphery of the eaves structure.

[0155] In a light-emitting display device according to an embodiment of the present disclosure, the eaves portion may overlap with at least a portion of the exposed portion of the auxiliary power electrode.

[0156] In a light-emitting display device according to an embodiment of the present disclosure, a support pattern may be included between a portion of the auxiliary power electrode and the eaves structure, the eaves structure being able to contact the upper surface of the auxiliary power electrode through the support pattern.

[0157] In the light-emitting display device according to embodiments of the present disclosure, the eaves structure and the support pattern may be made of different materials.

[0158] In a light-emitting display device according to an embodiment of the present disclosure, the eaves structure may include: an eaves portion disposed above the support pattern; and a support portion protruding from the lower surface of the eaves portion and configured to pass through the support pattern and contact the upper surface of the auxiliary power electrode, the undercut region including the lower portion of the eaves portion and the side surface of the support portion.

[0159] In a light-emitting display device according to an embodiment of the present disclosure, the support pattern may include a lower surface having a first width, an upper surface having a second width narrower than the first width, and an inclined surface between the lower surface and the upper surface, wherein the width of the eaves portion may be wider than the first width.

[0160] An embodiment of the light-emitting display device according to this disclosure may include: a circuit layer having a thin-film transistor and an auxiliary power electrode above a substrate; a first protective layer stacked on the circuit layer; a second protective layer disposed above the first protective layer; a pixel electrode disposed above the second protective layer and connected to the thin-film transistor; a dam layer disposed above the second protective layer and configured to define an opening at the pixel electrode; a contact portion penetrating the first protective layer, the second protective layer, and the dam layer to expose a portion of the auxiliary power electrode; an eaves structure disposed above the portion of the auxiliary power electrode exposed by the contact portion and configured to include an undercut region; a light-emitting layer disposed above the pixel electrode and the dam layer; and a common electrode disposed above the light-emitting layer and connected to the auxiliary power electrode in the undercut region of the eaves structure.

[0161] In the light-emitting display device according to the embodiments of the present disclosure, the first protective layer may be made of an inorganic insulating material, and the second protective layer may be made of an organic insulating material.

[0162] In the light-emitting display device according to an embodiment of the present disclosure, the undercut area of ​​the eaves structure may be formed in the same layer as the first protective layer.

[0163] In a light-emitting display device according to an embodiment of the present disclosure, the eaves structure may be made of the same material as at least one of the embankment, the second protective layer, and the pixel electrode.

[0164] In a light-emitting display device according to an embodiment of the present disclosure, the eaves structure may include: an eaves portion disposed above a portion of the auxiliary power electrode; and a support portion protruding from the lower surface of the eaves portion and contacting the upper surface of the auxiliary power electrode, wherein the height of the support portion may be less than or equal to the height of the first protective layer.

[0165] In a light-emitting display device according to an embodiment of the present disclosure, the support portion may include an inclined surface having an inverted conical shape, the upper width of the inverted conical shape being wider than the lower width of the inverted conical shape, the upper width protruding from the lower surface of the eaves portion, and the lower width contacting the upper surface of the auxiliary power electrode.

[0166] In a light-emitting display device according to an embodiment of the present disclosure, a support pattern may be included between a portion of the auxiliary power electrode and the eaves structure, the eaves structure being able to contact the upper surface of the auxiliary power electrode through the support pattern.

[0167] In an embodiment of the light-emitting display device according to this disclosure, the support pattern may be made of the same material as the material of the first protective layer.

[0168] In a light-emitting display device according to an embodiment of the present disclosure, the eaves structure may include: an eaves portion disposed above the support pattern; and a support portion protruding from the lower surface of the eaves portion and passing through the support pattern to contact the upper surface of the auxiliary power electrode. The support pattern may include a lower surface having a first width, an upper surface having a second width narrower than the first width, and an inclined surface between the lower surface and the upper surface. The width of the eaves portion may be wider than the first width.

[0169] An embodiment of the light-emitting display device according to the present disclosure may include: a circuit layer having a thin-film transistor and an auxiliary power electrode above a substrate; a first protective layer stacked on the circuit layer; a second protective layer disposed above the first protective layer; a contact portion configured to expose a portion of the auxiliary power electrode; an eaves structure disposed above the portion of the auxiliary power electrode and configured to have an undercut region; a support pattern between the portion of the auxiliary power electrode and the eaves structure; a pixel electrode disposed above the second protective layer and connected to the thin-film transistor; a light-emitting layer disposed above the pixel electrode; and a common electrode disposed above the light-emitting layer and connected to the auxiliary power electrode in the undercut region of the eaves structure.

[0170] In the light-emitting display device according to an embodiment of the present disclosure, the support pattern may be made of the same material as the material of the first protective layer, and the eaves structure may be made of a different material than the support pattern.

[0171] Therefore, the light-emitting display device according to this disclosure can reduce defects generated during the manufacturing process by forming an undercut shape with high peel resistance in the cathode contact area, thereby enabling mass production and improving the reliability of the light-emitting display device.

[0172] It will be apparent to those skilled in the art that the present disclosure is not limited to the described embodiments and drawings, and that various substitutions, modifications, and variations can be made to the present disclosure without departing from its spirit or scope. Therefore, the scope of the present disclosure is defined by the appended claims, and all variations or modifications derived from the meaning, scope, and equivalent concepts of the claims are intended to fall within the scope of the present disclosure.

Claims

1. A light-emitting display device, comprising: A circuit layer having thin-film transistors and auxiliary power electrodes above the substrate; A protective layer including a first protective layer and a second protective layer, wherein the first protective layer is superimposed on the circuit layer and the second protective layer is disposed on top of the first protective layer; The contact portion is configured to expose a portion of the auxiliary power electrode; An eaves structure is disposed above a portion of the auxiliary power electrode and is configured to have an undercut region; A pixel electrode is disposed above the protective layer and connected to the thin-film transistor; A light-emitting layer is disposed above the pixel electrode; as well as A common electrode, which is disposed above the light-emitting layer and connected to the auxiliary power electrode in the undercut region of the roof structure. The eaves structure is made of a single material; and The eaves structure is made of the same material as the second protective layer.

2. The light-emitting display device according to claim 1, wherein, The eaves structure includes: The eaves portion, which is positioned above a portion of the auxiliary power electrode; and The support section protrudes from the lower surface of the eaves section and contacts the upper surface of the auxiliary power electrode. The undercut area corresponds to the lower part of the eaves portion.

3. The light-emitting display device according to claim 2, wherein, The support portion includes an inclined surface with an inverted conical shape, the upper width of which is wider than the lower width of which is wider, the upper width protruding from the lower surface of the eaves portion, and the lower width contacting the upper surface of the auxiliary power electrode.

4. The light-emitting display device according to claim 2, in, The eaves structure is formed in an island pattern above a portion of the auxiliary power electrode, and A portion of the auxiliary power electrode exposed by the contact portion includes the exposed portion of the auxiliary power electrode on the periphery of the roof structure.

5. The light-emitting display device according to claim 4, wherein, The eaves portion overlaps with at least a portion of the exposed portion of the auxiliary power electrode.

6. The light-emitting display device according to claim 1, further comprising a support pattern between a portion of the auxiliary power electrode and the eaves structure. in, The eaves structure passes through the support pattern and contacts the upper surface of the auxiliary power electrode.

7. The light-emitting display device according to claim 6, wherein, The eaves structure and the supporting pattern are made of different materials.

8. The light-emitting display device according to claim 6, in, The eaves structure includes: The eaves portion, which is positioned above the supporting pattern; and The support portion, which protrudes from the lower surface of the eaves portion and is configured to penetrate the support pattern and contact the upper surface of the auxiliary power electrode, The undercut area includes the lower part of the eaves portion and the side surface of the support portion.

9. The light-emitting display device according to claim 8, in, The support pattern includes a lower surface having a first width, an upper surface having a second width narrower than the first width, and an inclined surface between the lower surface and the upper surface. The width of the eaves portion is wider than the first width.

10. A light-emitting display device, comprising: A circuit layer having thin-film transistors and auxiliary power electrodes above the substrate; A first protective layer, which overlaps the circuit layer; The second protective layer is disposed above the first protective layer; A pixel electrode is disposed above the second protective layer and connected to the thin-film transistor; A dam layer is disposed above the second protective layer and configured to define an opening at the pixel electrode; The contact portion penetrates the first protective layer, the second protective layer, and the dike layer to expose a portion of the auxiliary power electrode; An eaves structure is disposed above a portion of the auxiliary power electrode exposed by the contact portion and is configured to include an undercut region; A light-emitting layer is disposed above the pixel electrode and the embankment layer; as well as A common electrode is disposed above the light-emitting layer and connected to the auxiliary power electrode in the undercut region of the roof structure; The eaves structure is made of the same material as the second protective layer.

11. The light-emitting display device according to claim 10, in, The first protective layer is made of inorganic insulating material, and The second protective layer is made of organic insulating material.

12. The light-emitting display device according to claim 10, wherein, The undercut area of ​​the eaves structure is formed at the same layer as the first protective layer.

13. The light-emitting display device according to claim 12, wherein, The eaves structure includes: The eaves portion, which is positioned above a portion of the auxiliary power electrode; and The support portion protrudes from the lower surface of the eaves portion and contacts the upper surface of the auxiliary power electrode. The height of the support portion is lower than or equal to the height of the first protective layer.

14. The light-emitting display device according to claim 13, wherein, The support portion includes an inclined surface with an inverted conical shape, the upper width of which is wider than the lower width of which is wider, the upper width protruding from the lower surface of the eaves portion, and the lower width contacting the upper surface of the auxiliary power electrode.

15. The light-emitting display device according to claim 12, further comprising a support pattern between a portion of the auxiliary power electrode and the roof structure. in, The eaves structure passes through the support pattern and contacts the upper surface of the auxiliary power electrode.

16. The light-emitting display device according to claim 15, wherein, The support pattern is made of the same material as the first protective layer.

17. The light-emitting display device according to claim 15, in, The eaves structure includes: The eaves portion, which is positioned above the supporting pattern; and The support portion, which protrudes from the lower surface of the eaves portion and passes through the support pattern, contacts the upper surface of the auxiliary power electrode. The support pattern includes a lower surface having a first width, an upper surface having a second width narrower than the first width, and an inclined surface between the lower surface and the upper surface. The width of the eaves portion is wider than the first width.

18. A light-emitting display device, comprising: A circuit layer having thin-film transistors and auxiliary power electrodes above the substrate; A first protective layer, which overlaps the circuit layer; The second protective layer is disposed above the first protective layer; The contact portion is configured to expose a portion of the auxiliary power electrode; An eaves structure is disposed above a portion of the auxiliary power electrode and is configured to have an undercut region; A support pattern is provided between a portion of the auxiliary power electrode and the roof structure. A pixel electrode is disposed above the second protective layer and connected to the thin-film transistor; A light-emitting layer is disposed above the pixel electrode; as well as A common electrode, which is disposed above the light-emitting layer and connected to the auxiliary power electrode in the undercut region of the roof structure. The eaves structure is made of the same material as the second protective layer, and The support pattern is made of the same material as the first protective layer.

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