Method, system, device and medium for obtaining read disturbance times of a storage medium

Abstract

The application discloses a kind of acquisition storage medium read interference times of method, system, equipment and medium, method includes: to the first block to be tested is executed block reading operation and random page reading operation to calculate conversion coefficient;Select several groups of storage particles to be measured, and select several groups of second test blocks in each group of storage particles to be measured;Each group of second test blocks is worn to corresponding wear stage respectively, and corresponding data retention time is executed to each group of second test blocks after wearing respectively;The block reading operation is executed to each group of second test blocks to obtain average block reading times, and maximum read interference times are calculated based on average block reading times and conversion coefficient.The scheme of the application makes that maximum read interference times can be flexibly adjusted in different wear stages and different data retention times of storage medium, to effectively reduce the influence of read interference on storage medium.

Description

Technical Field

[0001] This invention relates to the field of storage technology, and in particular to a method, system, device, and medium for obtaining the number of read interferences on a storage medium. Background Technology

[0002] NAND Flash memory is a widely used storage medium. It consists of countless transistor circuits, which are ultimately packaged into a flash memory chip. Its principle is to record data by using different voltage values ​​to represent different amounts of charge stored in the memory cells. NAND Flash is composed of many blocks, each block contains multiple wordlines, and each wordline contains one or more pages. Data is stored by writing at least one wordline at a time; data is read by reading one or more pages from a wordline at a time, or even reading the entire block of pages at once.

[0003] Due to the hardware and electrical characteristics of Nand chips, for a physical block that has been written with data, when the number of reads of a selected block exceeds a certain number, the probability of bit reversal during data reading will increase, resulting in a higher RBER (Residual Bit Error Ratio). This phenomenon is called the Read Disturb effect.

[0004] In existing technical solutions, to mitigate the impact of read interference, a data migration operation is typically performed at fixed time intervals for each block storing valid data. This involves rewriting the data from one block to a new block. However, since the maximum number of read interference cycles is affected by wear-out cycles (PE cycles) and data retention time, performing data migration operations at fixed time intervals or with a fixed number of reads cannot precisely eliminate the impact of read interference. When the time interval or fixed number of reads is small, the data migration operation is too frequent, introducing a large number of redundant operations and reducing the user's access efficiency to the NAND Flash storage medium. When the time interval or fixed number of reads is large, it is easy to exceed the maximum number of read interference cycles, causing read failures. Summary of the Invention

[0005] In view of this, the present invention proposes a method, system, computer device, and computer-readable medium for obtaining the maximum number of read interferences of a storage medium. This method can obtain the maximum number of read interferences of the storage medium under different wear stages and different data retention times, so that the maximum number of read interferences can be flexibly adjusted under different wear stages and different data retention times of the storage medium. This effectively reduces the impact of read interferences, avoids redundant operations caused by selecting too few read interferences, and improves the IO efficiency of the storage medium.

[0006] To achieve the above objectives, one aspect of the present invention provides a method for obtaining the number of read interferences of a storage medium, specifically including the following steps:

[0007] Select several first test blocks in the storage medium, and perform block read operations and random page read operations on the first test blocks respectively to obtain the number of first block reads and the number of first page reads;

[0008] Calculate the conversion factor based on the number of times the first page is read and the number of times the first block is read;

[0009] Select several groups of storage chips to be tested, and select several groups of second test blocks in each group of storage chips to be tested;

[0010] Each group of the second test blocks is worn down to the corresponding wear stage, and the corresponding data retention time is executed for each group of the second test blocks after wear.

[0011] After the wear and data retention time is completed for each group of the second test blocks, a block read operation is performed on each group of the second test blocks to obtain the average number of block reads. Based on the average number of block reads and the conversion factor, the maximum number of page reads is calculated to obtain the maximum number of read interferences of the storage medium.

[0012] In some implementations, performing block read operations and random page read operations on the first test block to obtain the number of first block reads and the number of first page reads includes:

[0013] Perform an erase / write operation on the first test block, and perform a block read operation on the first test block after the erase / write operation is completed to obtain the first block read count;

[0014] Perform an erase / write operation on the first test block again, and then perform a random page read operation on the first test block after the erase / write operation is completed to obtain the first page read count.

[0015] In some implementations, performing a block read operation on the first test block after the erase / write operation has been completed to obtain the number of first block reads includes:

[0016] Perform a block read operation on the first test block after the erase and write operation has been completed, and record the number of error bytes for each page;

[0017] Determine whether the number of erroneous bytes in each page during the block read operation is greater than the error correction threshold;

[0018] In response to the fact that the number of erroneous bytes of the page during the block read operation is not greater than the error correction threshold, the step of performing a block read operation on the first test block that has completed the erase and write operation is returned;

[0019] In response to a page having more than the error correction threshold during the block read operation, the number of the first block read during the block read operation is recorded.

[0020] In some implementations, performing a random page read operation on the first test block after the rewrite operation to obtain the first page read count includes:

[0021] Perform a random page read operation on the first test block after the erase and write operation has been performed again, and record the number of error bytes for each page;

[0022] Determine whether the number of erroneous bytes in each page during the random page read operation is greater than the error correction threshold;

[0023] In response to the fact that the number of erroneous bytes of the page during the random page read operation is not greater than the error correction threshold, the step of performing a random page read operation on the first test block that has completed the erase and write operation again is returned;

[0024] In response to a page having more than the error correction threshold during the random page read operation, the number of times the first page is read during the random page read operation is recorded.

[0025] In some implementations, calculating the conversion factor based on the number of times the first page is read and the number of times the first block is read includes:

[0026] A conversion factor is calculated based on the first page read count, the first block read count, and the relationship between the page read count and the block read count, wherein the relationship between the page read count and the block read count is:

[0027] PR = α(p) * R * PN

[0028] Where PR represents the number of page reads of the block, α(p) represents the conversion factor, BR represents the number of block reads, and PN represents the number of pages contained in the block.

[0029] In some implementations, each group of the second test blocks is worn down to a corresponding wear stage, and a corresponding data retention time is performed on each group of the second test blocks after wear, including:

[0030] Each group of the second test blocks is worn down to the corresponding wear stage;

[0031] Perform an erase / write operation on each group of the second test blocks after wear.

[0032] After the erase and write operations are completed, the corresponding data retention time is executed for each group of the second test blocks.

[0033] In some implementations, performing block read operations on each group of the second test blocks to obtain the average number of block reads includes:

[0034] Perform a block read operation on the second block to be tested in each group, and record the number of times the second block is read in each group;

[0035] The average number of block reads for the second block under the same test conditions is calculated based on the number of second block reads for each group.

[0036] In some implementations, calculating the maximum page read count based on the average block read count and the conversion factor includes:

[0037] The maximum number of page reads is calculated based on the average number of block reads, the conversion factor, and the relationship between the number of page reads and the number of block reads.

[0038] In another aspect of the present invention, a system for obtaining the number of read interferences of a storage medium is also provided, comprising:

[0039] The first test module is configured to select several first test blocks in the storage medium, and perform block read operations and random page read operations on the first test blocks respectively to obtain the number of first block reads and the number of first page reads;

[0040] A first calculation module is configured to calculate a conversion factor based on the number of times the first page is read and the number of times the first block is read.

[0041] The second test module is configured to select several groups of storage particles to be tested, and select several groups of second test blocks in each group of storage particles to be tested.

[0042] The second test module is further configured to wear down each group of the second test blocks to the corresponding wear stage, and to perform a corresponding data retention time on each group of the second test blocks after wear.

[0043] The second calculation module is configured to perform a block read operation on each group of the second test blocks after the wear and data retention time is completed to obtain the average number of block reads, and calculate the maximum number of page reads based on the average number of block reads and the conversion factor to obtain the maximum number of read interferences of the storage medium.

[0044] In another aspect of the present invention, a computer device is provided, comprising: at least one processor; and a memory storing a computer program executable on the processor, the computer program performing the steps of the method described above when executed by the processor.

[0045] In another aspect, the present invention provides a computer-readable storage medium storing a computer program that, when executed by a processor, implements the above-described method steps.

[0046] The present invention has at least the following beneficial technical effects: Through the solution of the present invention, the maximum number of read interferences of the storage medium under different wear stages and different data retention times can be obtained, so that the maximum number of read interferences can be flexibly adjusted under different wear stages and different data retention times of the storage medium, thereby effectively reducing the impact of read interferences, avoiding redundant operations caused by selecting too few read interferences, and improving the IO efficiency of the storage medium. Attached Figure Description

[0047] To more clearly illustrate the technical solutions in the embodiments of the present invention or the prior art, the drawings used in the description of the embodiments or the prior art will be briefly introduced below. Obviously, the drawings described below are only some embodiments of the present invention. For those skilled in the art, other embodiments can be obtained based on these drawings without creative effort.

[0048] Figure 1 A block diagram of an embodiment of the method for obtaining the number of read interferences of a storage medium provided by the present invention;

[0049] Figure 2 A schematic diagram of an embodiment of the system for obtaining the number of read interferences of a storage medium provided by the present invention;

[0050] Figure 3 A schematic diagram of the structure of an embodiment of the computer device provided by the present invention;

[0051] Figure 4 This is a schematic diagram of an embodiment of the computer-readable storage medium provided by the present invention. Detailed Implementation

[0052] To make the objectives, technical solutions, and advantages of the present invention clearer, the embodiments of the present invention will be further described in detail below with reference to specific examples and the accompanying drawings.

[0053] It should be noted that all uses of "first" and "second" in the embodiments of the present invention are for the purpose of distinguishing two entities or parameters with the same name but different names. It is clear that "first" and "second" are only for the convenience of expression and should not be construed as limiting the embodiments of the present invention. Subsequent embodiments will not explain this in detail.

[0054] Based on the above objectives, a first aspect of the present invention provides an embodiment of a method for obtaining the number of read interferences on a storage medium. For example... Figure 1 As shown, it includes the following steps:

[0055] S10. Select several first test blocks in the storage medium, and perform block read operation and random page read operation on the first test blocks respectively to obtain the number of first block reads and the number of first page reads;

[0056] S20. Calculate the conversion factor based on the number of times the first page is read and the number of times the first block is read;

[0057] S30. Select several groups of storage chips to be tested, and select several groups of second test blocks in each group of storage chips to be tested.

[0058] S40. Wear each group of the second test blocks to the corresponding wear stage, and perform the corresponding data retention time for each group of the second test blocks after wear.

[0059] S50. After the wear and data retention time is completed for each group of the second test blocks, a block read operation is performed on each group of the second test blocks to obtain the average number of block reads, and the maximum number of page reads is calculated based on the average number of block reads and the conversion factor to obtain the maximum number of read interferences of the storage medium.

[0060] Specifically, a certain number of blocks to be tested are selected in the storage medium, and each block is erased and written once for subsequent testing. After all blocks to be tested have undergone the erase and write operation, block read operations and random page read operations are performed on each block to be tested to obtain the number of block reads and page reads. This can be achieved in the following way:

[0061] To obtain the number of block reads, perform block read operations on the block to be tested: Perform block read operations on the block to be tested, record the number of error bytes for each page during the block read operation, and determine whether the number of error bytes for each page during the block read operation is greater than the error correction threshold. Continue until the number of error bytes for a page during the block read operation exceeds the error correction threshold, and record the number of block reads during the above block read operation process.

[0062] To obtain the number of page reads, perform random page read operations on the test block: perform an erase / write operation once on the test block that has undergone a block read operation; perform random page read operations on the test block, record the number of erroneous bytes for each page, and determine whether the number of erroneous bytes for each page during the random page read operation is greater than the error correction threshold, until the number of erroneous bytes for a page during the random page read operation exceeds the error correction threshold, and record the number of page reads for the first page during the above random page read operation.

[0063] A conversion factor is calculated based on the obtained page read count and block read count. Then, the relationship between different wear stages (number of reads), different data retention times, and the number of block reads and page reads is tested. This can be achieved in the following way:

[0064] Select several groups of storage particles to be tested, and select several groups of test blocks in each group of storage particles to be tested. Each group of storage particles to be tested corresponds to a different wear stage, and each group of test blocks corresponds to a different data retention time.

[0065] Perform erase and write operations on all test blocks, wear down each group of test blocks to the corresponding wear stage, and perform the corresponding data retention time on each second test block after wear;

[0066] After the wear and data retention time are completed for each group of test blocks, a block read operation is performed on each group of test blocks to obtain the number of block reads for each test block in each group. The average number of block reads for each group of test blocks under the same test conditions is calculated, and the maximum number of page reads is calculated based on the average number of block reads and the conversion factor to obtain the maximum number of read interferences of the storage medium.

[0067] The maximum number of read disturbances represents the maximum number of block reads or page reads that a single block can be allowed to withstand. However, in practical applications of solid-state drives (SSDs), page reads are more common within a block and the read locations are more random, which more accurately reflects the actual usage of the SSD. Therefore, in this application, the maximum number of page reads based on a block represents the maximum number of read disturbances.

[0068] In this embodiment, the scheme obtains conversion factors for the number of block reads and page reads by selecting a certain number of test blocks and performing block read and page read operations. Furthermore, it selects several groups of storage particles to be tested, and within each group, selects several groups of test blocks to correspond to different wear stages and data retention times. Block read operations are performed on test blocks at different wear stages and data retention times to obtain the average number of block reads for each group of test blocks under the same wear stage and data retention time. Based on the average number of block reads and the conversion factors, the maximum number of read interferences under different wear stages and data retention times is calculated. This allows the maximum number of read interferences to be flexibly adjusted at different wear stages and data retention times of the storage medium, effectively reducing the impact of read interferences, avoiding redundant operations caused by selecting too few read interferences, and improving the IO efficiency of the storage medium.

[0069] In some implementations, performing block read operations and random page read operations on the first test block to obtain the number of first block reads and the number of first page reads includes:

[0070] Perform an erase / write operation on the first test block, and perform a block read operation on the first test block after the erase / write operation is completed to obtain the first block read count;

[0071] Perform an erase / write operation on the first test block again, and then perform a random page read operation on the first test block after the erase / write operation is completed to obtain the first page read count.

[0072] In some implementations, performing a block read operation on the first test block after the erase / write operation has been completed to obtain the number of first block reads includes:

[0073] Perform a block read operation on the first test block after the erase and write operation has been completed, and record the number of error bytes for each page;

[0074] Determine whether the number of erroneous bytes in each page during the block read operation is greater than the error correction threshold;

[0075] In response to the fact that the number of erroneous bytes of the page during the block read operation is not greater than the error correction threshold, the step of performing a block read operation on the first test block that has completed the erase and write operation is returned;

[0076] In response to a page having more than the error correction threshold during the block read operation, the number of the first block read during the block read operation is recorded.

[0077] In some implementations, performing a random page read operation on the first test block after the rewrite operation to obtain the first page read count includes:

[0078] Perform a random page read operation on the first test block after the erase and write operation has been performed again, and record the number of error bytes for each page;

[0079] Determine whether the number of erroneous bytes in each page during the random page read operation is greater than the error correction threshold;

[0080] In response to the fact that the number of erroneous bytes of the page during the random page read operation is not greater than the error correction threshold, the step of performing a random page read operation on the first test block that has completed the erase and write operation again is returned;

[0081] In response to a page having more than the error correction threshold during the random page read operation, the number of times the first page is read during the random page read operation is recorded.

[0082] In some implementations, calculating the conversion factor based on the number of times the first page is read and the number of times the first block is read includes:

[0083] A conversion factor is calculated based on the first page read count, the first block read count, and the relationship between the page read count and the block read count, wherein the relationship between the page read count and the block read count is:

[0084] PR = α(p) * BR * PN

[0085] Where PR represents the number of page reads of the block, α(p) represents the conversion factor, BR represents the number of block reads, and PN represents the number of pages contained in the block.

[0086] In one specific embodiment, the present invention is applied to a solid-state drive (SSD), and more specifically to the Nand flash memory of the SSD.

[0087] Because page reads are more common and their locations are more random within a block during practical applications of solid-state drives (SSDs), a single block read is not necessarily PN times the number of page reads. Therefore, a coefficient α(p) needs to be introduced into the existing conversion formula between page reads and block reads to more accurately represent the relationship between page reads and block reads for a single block.

[0088] PR=α(p)*BR*PN (1)

[0089] Where α(p) is the conversion factor for converting PR (number of Page Reads per block) to BR (number of Block Reads), where PR represents the number of page reads per block, BR represents the number of block reads, and PN (number of Pages per block) is the number of pages contained in a single block, the value of which is determined by the characteristics of Nand granularity.

[0090] The conversion factor α9p is calculated using the following process:

[0091] S01. Select a certain number of blocks to be tested and erase / write them once;

[0092] S02. Perform a Block Read on the block under test and record the error bits of each page during the reading process;

[0093] S03. Repeat operation S02 until the error bits of a single page exceed the error correction threshold, and then stop and record the number of Block Reads BR.

[0094] S04, Perform operation S01 once;

[0095] S05. Perform a random Page Read on the test block and record the Error Bits of the read Page;

[0096] S06. Repeat the S05 operation until a single page's Error Bits exceed the error correction threshold, then stop and record the Page Read count PR.

[0097] S07. The conversion factor α(p) can be calculated according to formula (1).

[0098] In some implementations, each group of the second test blocks is worn down to a corresponding wear stage, and a corresponding data retention time is performed on each group of the second test blocks after wear, including:

[0099] Each group of the second test blocks is worn down to the corresponding wear stage;

[0100] Perform an erase / write operation on each group of the second test blocks after wear.

[0101] After the erase and write operations are completed, the corresponding data retention time is executed for each group of the second test blocks.

[0102] In some implementations, performing block read operations on each group of the second test blocks to obtain the average number of block reads includes:

[0103] Perform a block read operation on the second block to be tested in each group, and record the number of times the second block is read in each group;

[0104] The average number of block reads for the second block under the same test conditions is calculated based on the number of second block reads for each group.

[0105] In some implementations, calculating the maximum page read count based on the average block read count and the conversion factor includes:

[0106] The maximum number of page reads is calculated based on the average number of block reads, the conversion factor, and the relationship between the number of page reads and the number of block reads.

[0107] In one specific embodiment, the steps for obtaining the maximum read interference value at different stages are as follows:

[0108] S11. Select N groups of Nand particles, and select X groups of blocks to be tested from each Nand particle. Each group of particles corresponds to a different PE stage, and wear down the corresponding block to be tested to the corresponding PE stage.

[0109] S12. Perform the same erase and write operation on all test blocks. The X blocks in each group of particles correspond to different Retention stages, and perform the corresponding Retention operations.

[0110] S13. Perform a Block Read operation on the test block group that has completed PE wear and retention operations, and record the Error Bits of each Page during the read operation.

[0111] S14. Repeat the S03 operation until the number of Error Bits of a single Page exceeds the error correction threshold, then stop reading the Block, record its BR number, calculate the average BR of the same test block group, and calculate its maximum PR number.

[0112] The above scheme can obtain the maximum number of read interferences of the storage medium under different wear stages and different data retention times. This allows the maximum number of read interferences to be flexibly adjusted under different wear stages and data retention times of the storage medium, thereby effectively reducing the impact of read interferences, avoiding redundant operations caused by selecting too few read interferences, and improving the IO efficiency of the storage medium.

[0113] The specific implementation of the present invention will be described below through another specific embodiment.

[0114] The NAND Flash memory chip was selected as the test object, with an effective PE phase of 0–10000, a retention time of 0–90 days, a PN value of 1344, and an error correction threshold of 250.

[0115] The specific steps for determining the coefficient of α(p) are as follows:

[0116] First, select a certain number of blocks to be tested in the Nand Flash storage chip, perform an erase operation on the blocks to be tested, and then perform a random data write operation.

[0117] Second, perform a Block Read on the test block and record the Error Bits (number of error bytes) of 1344 pages during the read process;

[0118] Third, repeat step two until a single page has more error bits than the error correction threshold of 250, and record the number of Block Reads (BR).

[0119] Fourth, perform the first step;

[0120] Fifth, perform a Page Read on the test block and record the Error Bits of each Page during the reading process;

[0121] Sixth, repeat step five until a single page's Error Bits exceed the error correction threshold of 250, and record the Page Read count (PR).

[0122] Seventh, calculate the α9p coefficient value based on the PN, PR, and BR values;

[0123] The specific steps for obtaining the maximum Read Disturb value at different stages are as follows:

[0124] First, 11 groups of Nand particles were selected, and 7 groups of blocks were selected from each Nand particle to be tested. Each group of particles corresponds to a different PE (0-10000) stage with an interval of 1000. The corresponding blocks to be tested were worn down to the corresponding PE stage.

[0125] Secondly, perform the same erase and write operation on all test blocks. The seven blocks in each group of particles correspond to different Retention (0-90d) stages, with an interval of 15d, and perform the corresponding Retention operation.

[0126] Third, perform a Block Read operation on the test block group that has completed PE wear and retention operations, and record the Error Bits of 1344 Pages during the read operation;

[0127] Fourth, repeat step three for each block until the number of Error Bits of a single Page exceeds the error correction threshold. Then, stop reading the block, record its BR number, calculate the average BR of the same test block group, and calculate its maximum PR number based on the α coefficient.

[0128] The above method can accurately obtain the maximum number of page reads of a block under different wear stages and different data retention times, i.e. the maximum number of read interferences. The maximum read interference value can be flexibly adjusted under different wear stages and different data retention times of the memory to effectively reduce the impact of read interference.

[0129] Based on the same inventive concept, according to another aspect of the present invention, such as Figure 2 As shown, embodiments of the present invention also provide a system for obtaining the number of read interferences on a storage medium, comprising:

[0130] The first test module 110 is configured to select a plurality of first test blocks in the storage medium, and perform block read operations and random page read operations on the first test blocks respectively to obtain the number of first block reads and the number of first page reads;

[0131] The first calculation module 120 is configured to calculate a conversion factor based on the number of times the first page is read and the number of times the first block is read.

[0132] The second test module 130 is configured to select several groups of storage particles to be tested, and select several groups of second test blocks in each group of storage particles to be tested.

[0133] The second test module 130 is further configured to wear each group of the second test blocks to the corresponding wear stage, and to perform a corresponding data retention time on each group of the second test blocks after wear.

[0134] The second calculation module 140 is configured to perform a block read operation on each group of the second test blocks after the wear and data retention time is completed to obtain the average number of block reads, and calculate the maximum number of page reads based on the average number of block reads and the conversion factor to obtain the maximum number of read interferences of the storage medium.

[0135] Based on the same inventive concept, according to another aspect of the present invention, such as Figure 3As shown, an embodiment of the present invention also provides a computer device 30, which includes a processor 310 and a memory 320. The memory 320 stores a computer program 321 that can be run on the processor. When the processor 310 executes the program, it performs the steps of the method described above.

[0136] The memory, as a non-volatile computer-readable storage medium, can be used to store non-volatile software programs, non-volatile computer-executable programs, and modules, such as the program instructions / modules corresponding to the method for obtaining the number of read interferences of the storage medium as described in the embodiments of this application. The processor executes various system functions and data processing by running the non-volatile software programs, instructions, and modules stored in the memory, thereby implementing the method for obtaining the number of read interferences of the storage medium as described in the above embodiments.

[0137] The memory may include a program storage area and a data storage area. The program storage area may store the operating system and applications required for at least one function; the data storage area may store data created based on system usage. Furthermore, the memory may include high-speed random access memory and non-volatile memory, such as at least one disk storage device, flash memory device, or other non-volatile solid-state storage device. In some embodiments, the memory may optionally include memory remotely located relative to the processor, which can be connected to the local module via a network. Examples of such networks include, but are not limited to, the Internet, corporate intranets, local area networks, mobile communication networks, and combinations thereof.

[0138] Based on the same inventive concept, according to another aspect of the present invention, such as Figure 4 As shown, embodiments of the present invention also provide a computer-readable storage medium 40, which stores a computer program 410 that, when executed by a processor, performs the methods described above.

[0139] Finally, it should be noted that those skilled in the art will understand that all or part of the processes in the above embodiments can be implemented by a computer program instructing related hardware. The program can be stored in a computer-readable storage medium, and when executed, it can include the processes of the embodiments of the methods described above. The storage medium for the program can be a magnetic disk, optical disk, read-only memory (ROM), or random access memory (RAM), etc. The above computer program embodiments can achieve the same or similar effects as any of the corresponding foregoing method embodiments.

[0140] Those skilled in the art will also understand that the various exemplary logic blocks, modules, circuits, and algorithm steps described in conjunction with the disclosure herein can be implemented as electronic hardware, computer software, or a combination of both. To clearly illustrate this interchangeability between hardware and software, the functionality of various illustrative components, blocks, modules, circuits, and steps has been generally described. Whether this functionality is implemented as software or as hardware depends on the specific application and the design constraints imposed on the system as a whole. Those skilled in the art can implement the functionality in various ways for each specific application, but such implementation decisions should not be construed as departing from the scope of the embodiments disclosed herein.

[0141] The above are exemplary embodiments disclosed in this invention. However, it should be noted that various changes and modifications can be made without departing from the scope of the embodiments of this invention as defined by the claims. The functions, steps, and / or actions of the methods according to the disclosed embodiments described herein do not need to be performed in any particular order. The sequence numbers of the disclosed embodiments of this invention are for descriptive purposes only and do not represent the superiority or inferiority of the embodiments. Furthermore, although the elements disclosed in the embodiments of this invention may be described or claimed individually, they may be understood as multiple unless explicitly limited to a singular number.

[0142] It should be understood that, as used herein, the singular form “a” is intended to include the plural form as well, unless the context clearly supports an exception. It should also be understood that, as used herein, “and / or” refers to any and all possible combinations of one or more of the associated listed items.

[0143] Those skilled in the art should understand that the discussion of any of the above embodiments is merely exemplary and is not intended to imply that the scope of the invention (including the claims) is limited to these examples. Within the framework of the invention, technical features of the above embodiments or different embodiments can be combined, and many other variations of different aspects of the invention exist, which are not provided in the details for the sake of brevity. Therefore, any omissions, modifications, equivalent substitutions, improvements, etc., made within the spirit and principles of the invention should be included within the protection scope of the invention.

Claims

1. A method for obtaining the number of read interferences on a storage medium, characterized in that, include: Select several first test blocks in the storage medium, and perform block read operations and random page read operations on the first test blocks respectively to obtain the number of first block reads and the number of first page reads; Based on the first page read count and the first block read count, according to the relationship between the page read count and the block read count... Calculate the conversion factor, where, Indicates the number of page reads for a block. Indicates the conversion factor. This indicates the number of times a block is read, and PN indicates the number of pages contained in the block. Select several groups of storage chips to be tested, and select several groups of second test blocks in each group of storage chips to be tested; Each group of the second test blocks is worn down to the corresponding wear stage, and an erase and write operation is performed on each group of the second test blocks after wear. After the erase and write operation is completed, the corresponding data retention time is performed on each group of the second test blocks. After the wear and data retention time are completed for each group of the second test blocks, a block read operation is performed on each group of the second test blocks, and the average number of block reads under the same test conditions is calculated. Based on the average number of block reads and the conversion factor, the relationship between the number of page reads and the number of block reads is calculated. Calculate the maximum number of page reads, and use the maximum number of page reads as the maximum number of read interferences of the storage medium.

2. The method according to claim 1, characterized in that, Performing block read operations and random page read operations on the first test block to obtain the number of first block reads and the number of first page reads includes: Perform an erase / write operation on the first test block, and perform a block read operation on the first test block after the erase / write operation is completed to obtain the first block read count; Perform an erase / write operation on the first test block again, and then perform a random page read operation on the first test block after the erase / write operation is completed to obtain the first page read count.

3. The method according to claim 2, characterized in that, To obtain the number of reads for the first block after the erase / write operation has been completed, a block read operation is performed on the first block. Perform a block read operation on the first test block after the erase and write operation has been completed, and record the number of error bytes for each page; Determine whether the number of erroneous bytes in each page during the block read operation is greater than the error correction threshold; In response to the fact that the number of erroneous bytes of the page during the block read operation is not greater than the error correction threshold, the step of performing a block read operation on the first test block that has completed the erase and write operation is returned; In response to a page having more than the error correction threshold during the block read operation, the number of the first block read during the block read operation is recorded.

4. The method according to claim 2, characterized in that, Perform a random page read operation on the first test block after the rewrite operation to obtain the number of first page reads, including: Perform a random page read operation on the first test block after the erase and write operation has been performed again, and record the number of error bytes for each page; Determine whether the number of erroneous bytes in each page during the random page read operation is greater than the error correction threshold; In response to the fact that the number of erroneous bytes of the page during the random page read operation is not greater than the error correction threshold, the step of performing a random page read operation on the first test block that has completed the erase and write operation again is returned; In response to a page having more than the error correction threshold during the random page read operation, the number of times the first page is read during the random page read operation is recorded.

5. The method according to claim 1, characterized in that, Performing block read operations on each group of the second test blocks to obtain the average number of block reads includes: Perform a block read operation on the second block to be tested in each group, and record the number of times the second block is read in each group; The average number of block reads for the second block under the same test conditions is calculated based on the number of second block reads for each group.

6. A system for obtaining the number of read interferences on a storage medium, characterized in that, include: The first test module is configured to select several first test blocks in the storage medium, and perform block read operations and random page read operations on the first test blocks respectively to obtain the number of first block reads and the number of first page reads; A first calculation module is configured to calculate the number of page reads and the number of block reads based on the first page read count and the first block read count, according to the relationship between the page read count and the block read count. Calculate the conversion factor, where, Indicates the number of page reads for a block. Indicates the conversion factor. This indicates the number of times a block is read, and PN indicates the number of pages contained in the block. The second test module is configured to select several groups of storage particles to be tested, and select several groups of second test blocks in each group of storage particles to be tested. The second test module is further configured to wear down each group of the second test blocks to the corresponding wear stage, and to perform an erase and write operation on each group of the second test blocks after wear. After the erase and write operation is completed, the corresponding data retention time is performed on each group of the second test blocks. The second calculation module is configured to perform a block read operation on each group of the second test blocks after the wear and data retention time calculation is completed, and calculate the average number of block reads under the same test conditions. Based on the average number of block reads and the conversion factor, the module calculates the number of page reads and the number of block reads according to the relationship between the number of page reads and the number of block reads. Calculate the maximum number of page reads, and use the maximum number of page reads as the maximum number of read interferences of the storage medium.

7. A computer device, comprising: At least one processor; as well as A memory storing a computer program executable on the processor, characterized in that the processor executes the program and performs the steps of the method as described in any one of claims 1 to 5.

8. A computer-readable storage medium storing a computer program, characterized in that, When the computer program is executed by a processor, it performs the steps of the method as described in any one of claims 1 to 5.

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