Substrate processing apparatus and substrate processing method

Abstract

The present invention provides a substrate processing apparatus and a substrate processing method, and particularly, an apparatus for processing a substrate, the apparatus including a processing vessel having a processing space; a support unit for supporting and rotating the substrate in the processing space; a liquid supply unit for supplying a processing liquid to the substrate supported by the support unit; and a heating unit for heating the substrate, wherein the support unit includes a spin chuck; a rotation driver for rotating the spin chuck; a chuck pin mounted on the spin chuck so as to rotate together with the spin chuck; and a chuck pin moving unit for moving the chuck pin between a contact position in which the chuck pin is in contact with a side portion of the substrate and an open position in which the chuck pin is spaced apart from the side portion of the substrate, and the chuck pin moving unit moves the chuck pin while the substrate is rotated by the spin chuck.

Description

[0001] Cross-reference to related applications

[0002] This application claims priority and benefit to Korean Patent Application No. 10-2021-0136382, filed with the Korean Intellectual Property Office on October 14, 2021, the entire contents of which are incorporated herein by reference. Technical Field

[0003] This invention relates to a substrate processing apparatus and a substrate processing method. Background Technology

[0004] To manufacture semiconductor devices or liquid crystal displays, various processes are performed on the substrate, such as photography, ashing, ion implantation, thin film deposition, and cleaning. Among these, etching or cleaning processes remove unwanted areas of the thin film formed on the substrate, or etch or clean foreign matter, particles, and the like. These processes require high selectivity, high etch rate, and etch uniformity. Furthermore, because semiconductor devices are highly integrated, even higher levels of etch selectivity and etch uniformity are required.

[0005] Generally, in the etching or cleaning process of a substrate, the processing liquid treatment operation, the rinsing operation, and the drying operation are performed sequentially. In one example, in the processing liquid treatment operation, a processing liquid for etching thin films formed on the substrate or removing foreign matter from the substrate is supplied to the substrate to form a molten pool. The molten pool of the processing liquid is then heated to promote etching by the processing liquid. In the rinsing operation, a rinsing solution such as pure water is supplied to the substrate.

[0006] The aforementioned processing liquid treatment operation is performed by placing the substrate on a support unit and supplying processing liquid to the substrate while rotating the support unit. The support unit is equipped with chuck pins for supporting the side portions of the substrate to prevent the substrate from moving laterally during rotation. The chuck pins move between a spare position providing space for the substrate to be placed when it is loaded or unloaded onto the support unit, and a support position where the substrate, while rotating on the support unit, contacts the side portions of the substrate during the process. Accordingly, the space provided between the chuck pins in the spare position is wider than the space provided between the chuck pins in the support position.

[0007] Generally, when forming a molten pool on a substrate, a problem arises where the processing liquid flows down the chuck pins due to the contact between the substrate and the chuck pins. Furthermore, it is difficult to maintain a consistent liquid film volume due to this flow of processing liquid down the chuck pins. Summary of the Invention

[0008] The present invention aims to provide a substrate processing apparatus and a substrate processing method that can effectively process substrates.

[0009] The present invention also aims to provide a support unit in which a chuck pin can move freely during a process of rotating a substrate, as well as a substrate processing apparatus and a method of using the same.

[0010] The purpose of this invention is not limited thereto, and other unmentioned purposes will be clearly understood by those skilled in the art from the following description.

[0011] An exemplary embodiment of the present invention provides an apparatus for processing a substrate, the apparatus comprising: a processing container having a processing space; a support unit for supporting and rotating the substrate in the processing space; a liquid supply unit for supplying processing liquid to the substrate supported by the support unit; and a heating unit for heating the substrate, wherein the support unit comprises: a spin chuck; a rotation driver for rotating the spin chuck; a chuck pin mounted on the spin chuck and rotating together with the spin chuck; and a chuck pin moving unit for moving the chuck pin between a contact position in which the chuck pin contacts a side portion of the substrate and an open position in which the chuck pin is spaced apart from the side portion of the substrate, and the chuck pin moving unit moves the chuck pin while the substrate is rotated by the spin chuck.

[0012] The chuck pin moving unit may include: a first clutch module including a first clutch configured to be movable in the vertical direction by a lifting drive; and a second clutch module including a second clutch facing the first clutch and connected to the chuck pin.

[0013] When the first clutch engages with the second clutch, the chuck pin can move from the engaged position to the open position.

[0014] When the first clutch is disengaged from the second clutch, the chuck pin can be in the contact position.

[0015] The second clutch module can rotate together with the spin chuck.

[0016] When the first clutch engages with the second clutch, the first clutch can rotate together with the second clutch.

[0017] The first clutch module may include: a first clutch; a fixed member that does not rotate with the spin chuck; and a bearing member disposed between the first clutch and the fixed member.

[0018] The bearing component may include an outer ring connected to a fixed component, an inner ring connected to a first clutch, and a ball disposed between the outer ring and the inner ring, and when the first clutch is in contact with the second clutch, the first clutch may rotate together with the second clutch relative to the fixed component.

[0019] The elastic member can be positioned between the lifting drive and the first clutch.

[0020] The shock-reducing component can be housed inside the first clutch, and when the first clutch engages with the second clutch and rotates together with the second clutch, the shock-reducing component can reduce the impact generated in the rotational direction of the first clutch.

[0021] The second clutch module may include: a second clutch; a base member including a first portion having a longitudinal direction corresponding to the vertical direction, and a second portion extending from the first portion and extending in a direction perpendicular to the longitudinal direction of the first portion; a first movable member movably connected to the first portion of the base member; a second movable member connected to a chuck pin and movably connected to the second portion of the base member; and a third movable member having one end hinged to the first movable member and the other end hinged to the second movable member, wherein the second clutch is connected to the first movable member.

[0022] The second clutch may include: a plate portion facing the first clutch; and a support portion for connecting the plate portion and the first moving member.

[0023] The partition wall can be placed between the first clutch module and the second clutch module, and the second clutch can be located between the partition wall and the first clutch.

[0024] The support portion of the second clutch can have a hole formed in the partition wall, and a sealing member can be disposed between the inner surface of the hole in the partition wall and the support portion of the second clutch.

[0025] The spin chuck can rotate, causing the substrate to rotate at a first speed or a second speed faster than the first speed. When the substrate rotates at the first speed, the first clutch can engage with the second clutch, and when the substrate rotates at the second speed, the first clutch can disengage from the second clutch.

[0026] Another exemplary embodiment of the present invention provides a method for processing a substrate, the method comprising: a first liquid supply operation, supplying a first liquid to a substrate rotating at a first speed in an open state where a chuck pin for supporting a side portion of the substrate is in an open position spaced apart from the side portion of the substrate, and forming a first liquid film on the substrate; a liquid film heating operation following the first liquid supply operation, heating the first liquid film formed on the substrate in the open state; and a second liquid supply operation following the liquid film heating operation, supplying a second liquid to a substrate rotating at a second speed faster than the first speed in a contact state where the chuck pin is in a contact position where the chuck pin contacts the side portion of the substrate to support the side portion of the substrate, wherein a change from an open state to a contact state is performed simultaneously with the substrate rotation.

[0027] The first liquid and the second liquid can be the same, and the first liquid can be an aqueous solution of phosphoric acid.

[0028] In the second liquid supply operation, the amount of the second liquid supplied per unit time can be greater than the amount of the first liquid supplied per unit time in the first liquid supply operation.

[0029] In the liquid film heating operation, the substrate can rotate at a first speed, and the first liquid may not be supplied to the substrate.

[0030] Another exemplary embodiment of the present invention provides a method for processing a substrate using a substrate processing apparatus, the method comprising: a first liquid supply operation, supplying a first liquid to a substrate rotating at a first speed in an open state with the chuck pin in an open position, and forming a first liquid film on the substrate; a liquid film heating operation following the first liquid supply operation, heating the first liquid film formed on the substrate in the open state with the chuck pin in an open position; and a second liquid supply operation following the liquid film heating operation, supplying a second liquid to a substrate rotating at a second speed faster than the first speed in a contact state with the chuck pin in a contact position, wherein the chuck pin changes from an open state to a contact state while the substrate is rotating.

[0031] According to an exemplary embodiment of the present invention, it is possible to efficiently process the substrate.

[0032] Furthermore, according to an exemplary embodiment of the present invention, the chuck pin can move freely while the process is performed by rotating the substrate.

[0033] Furthermore, according to an exemplary embodiment of the present invention, it is possible to prevent the processing liquid from flowing down to the chuck pin.

[0034] Furthermore, according to an exemplary embodiment of the present invention, the processing liquid pool formed on the substrate can be maintained as a predetermined amount or more of liquid film.

[0035] Furthermore, according to an exemplary embodiment of the present invention, the chuck pin can move normally regardless of whether the support unit of the support substrate rotates.

[0036] Furthermore, according to an exemplary embodiment of the invention, it is possible to adjust the travel of the chuck pin during the process.

[0037] Furthermore, according to an exemplary embodiment of the present invention, various types of heat sources and cooling systems for various heat sources can be applied via the support unit that forms a hollow space.

[0038] The effects of the present invention are not limited to those described above, and those skilled in the art can clearly understand the effects not mentioned from this specification and the accompanying drawings. Attached Figure Description

[0039] Figure 1 This is a top plan view illustrating a substrate processing facility according to an exemplary embodiment of the present invention.

[0040] Figure 2 To illustrate an exemplary embodiment of the present invention, Figure 1 A cross-sectional view of the substrate processing equipment provided in the process chamber.

[0041] Figure 3 This is a cross-sectional view illustrating a chuck pin and a chuck pin moving unit according to an exemplary embodiment of the present invention.

[0042] Figure 4 This is a planar cross-sectional view illustrating the state in which the impact mitigation component according to an exemplary embodiment of the present invention is mounted on the first clutch.

[0043] Figure 5 This diagram schematically illustrates the installed state of the elastic member of the lifting actuator according to an exemplary embodiment of the present invention.

[0044] Figure 6 This is a cross-sectional view illustrating a second clutch module according to an exemplary embodiment of the present invention.

[0045] Figure 7 This diagram is intended to schematically illustrate a state in which the chuck pin is movably positioned between a contact position and an open position while the substrate is rotated, according to an exemplary embodiment of the present invention.

[0046] Figure 8 This diagram illustrates the state of the chuck pin moving unit when the chuck pin is in the open position according to an exemplary embodiment of the present invention.

[0047] Figure 9 This is a view illustrating the state of the chuck pin moving unit when the chuck pin is in the contact position according to an exemplary embodiment of the present invention.

[0048] Figure 10 This is a flowchart of a substrate processing method according to an exemplary embodiment of the present invention.

[0049] Figures 11 to 14 For sequential illustration Figure 10 A diagram of the substrate processing method.

[0050] [Explanation of reference numerals in the attached figures]

[0051] 1-Substrate processing facility; 10-Index module; 12-First direction; 14-Second direction; 16-Third direction; 18-Carrier; 20-Processing module; 120-Loading port; 140-Transfer frame; 142-Index rail; 144-Index robotic arm; 144a-Base; 144b-Main body; 144c-Index arm; 220-Buffer unit; 240-Transfer chamber; 242-Guide rail; 244-Main robotic arm; 244a-Base; 244b-Main body; 244c-Main arm; 260-Process chamber; 300-Substrate Board processing equipment; 310-chamber; 315-fan filter unit; 320-processing container; 321-first recovery container; 321b-first recovery line; 322-second recovery container; 322a-second inlet; 322b-second recovery line; 324-second protection section; 324a-first inlet; 326-first protection section; 340-substrate support unit; 342-spinning chuck; 342a-through hole; 346-chuck pin; 347-support pin; 348-window component; 349-rotary actuator; 360-lifting unit Yuan; 362-Bracket; 364-Moving shaft; 366-Driver; 390-Liquid supply unit; 400-Chuck pin moving unit; 420-First clutch module; 421-First clutch; 422-Fixing component; 423-Bearing component; 430-Lifting drive; 432-Elastic component; 440-Second clutch module; 441-Second clutch; 442-Base component; 443-First moving component; 444-Second moving component; 445-Third moving component; 500-Heating unit; 3421-Main body; 34 22 - Extension portion; 3481 - Hole; 4211 - Impact mitigation component; 4231 - Outer ring; 4232 - Inner ring; 4233 - Ball; 4412 - Flat plate portion; 4414 - Support portion; 4422 - First portion; 4424 - Second portion; C1 - First liquid film; C2 - Second liquid film; P - Separator wall; S - Sealing component; S100 - Substrate alignment operation; S200 - First liquid supply operation; S300 - Liquid film heating operation; S400 - Second liquid supply operation; v1 - First speed; v2 - Second speed; W - Substrate. Detailed Implementation

[0052] Exemplary embodiments of the present invention will now be described more fully with reference to the accompanying drawings, which illustrate exemplary embodiments of the invention. However, the present invention may be implemented in various ways and is not limited to the following exemplary embodiments. Furthermore, in describing the exemplary embodiments of the present invention in detail, detailed descriptions of well-known functions or configurations will be omitted if it is determined that such detailed descriptions would unnecessarily obscure the essential points of the invention. Additionally, the same reference numerals are used throughout the drawings for parts having similar functions and effects.

[0053] Furthermore, unless explicitly stated otherwise, the word "comprise" and variations such as "comprises" or "comprising" will be construed as including the stated elements but not excluding any other elements. It should be understood that the terms "including" and "having" are intended to specify the presence of the features, numbers, operations, operations, constituent elements, and components or combinations thereof described in the specification, and do not preclude the possibility of the prior presence or addition of one or more other features, numbers, operations, operations, constituent elements, and components or combinations thereof.

[0054] The singular expressions used herein include plural expressions unless the context clearly indicates otherwise. Therefore, the shape, size, and likeness of elements in the accompanying figures may be exaggerated for clarity.

[0055] The expression "and / or" includes references to each item in the project and all combinations including one or more items in the project. Furthermore, in this specification, "connected" means not only when component A is directly connected to component B, but also when component A and component B are indirectly connected by inserting component C between component A and component B.

[0056] The exemplary embodiments of the present invention can be modified in various ways, and the scope of the invention should not be construed as limited to the following exemplary embodiments. These exemplary embodiments are provided to explain the invention more fully to those skilled in the art. Therefore, the shapes of the elements in the drawings are exaggerated for clearer illustration.

[0057] In this exemplary embodiment, a process for etching a substrate using liquid etching will be described as an example. However, this exemplary embodiment is not limited to etching processes and can be applied in many ways to substrate processing processes using liquids, such as cleaning processes, ashing processes, and developing processes.

[0058] Here, "substrate" is a general concept, encompassing all substrates used in the manufacture of semiconductor devices, flat panel displays (FPDs), and other articles on which circuit patterns are formed on thin films. Examples of substrate W include silicon wafers, glass substrates, and organic substrates.

[0059] The following will refer to Figures 1 to 13 Examples of the present invention will be described in detail.

[0060] Figure 1 This is a top plan view illustrating a substrate processing facility according to an exemplary embodiment of the present invention. (Reference) Figure 1The substrate processing facility 1 includes an indexing module 10 and a process processing module 20.

[0061] The index module 10 includes a loading port 120 and a transfer frame 140. The loading port 120, the transfer frame 140, and the process processing module 20 can be configured sequentially. Hereinafter, the direction in which the loading port 120, the transfer frame 140, and the process processing module 20 are configured is referred to as the first direction 12, the direction perpendicular to the first direction 12 when viewed from above is referred to as the second direction 14, and the direction perpendicular to the plane including the first direction 12 and the second direction 14 is referred to as the third direction 16.

[0062] A carrier 18 containing substrate W sits on loading ports 120. Multiple loading ports 120 are provided, and the multiple loading ports 120 are arranged in series in the second direction 14. The number of loading ports 120 may be increased or decreased depending on the process efficiency and floor space requirements of the process module 20, and similar factors. Multiple slots (not shown) may be formed in the carrier 18 to accommodate multiple substrates W in a horizontally positioned state relative to the ground. A front-opening unified pod (FOUP) may be used as the carrier 18.

[0063] The transfer frame 140 transfers the substrate W between the carrier 18 located on the loading port 120 and the buffer unit 220. The transfer frame 140 provides an index track 142 and an indexing robot arm 144. The longitudinal direction of the index track 142 is arranged parallel to a second direction 14. The indexing robot arm 144 is mounted on the index track 142 and moves linearly along the index track 142 in the second direction 14. The indexing robot arm 144 includes a base 144a, a body 144b, and an indexing arm 144c. The base 144a is mounted so as to be movable along the index track 142. The body 144b is coupled to the base 144a. The body 144b is configured to be movable on the base 144a in a third direction 16. Furthermore, the body 144b is configured to be rotatable on the base 144a. The indexing arm 144c is coupled to the body 144b and configured to be movable forward and backward relative to the body 144b. Multiple indexing arms 144c are configured to be driven individually. Index arms 144c are arranged in a stacked, spaced-apart configuration on third-direction 16. A portion of the index arms 144c can be used when the substrate W is transferred from the process module 20 to the carrier 18, while another portion of the plurality of index arms 144c can be used when the substrate W is transferred from the carrier 18 to the process module 20. This prevents particles generated on the substrate W before process loading and unloading from the substrate W by the index robotic arms 144 from adhering to the substrate W after process loading.

[0064] The process module 20 includes a buffer unit 220, a transfer chamber 240, and a process chamber 260.

[0065] A buffer unit 220 is disposed between the transfer frame 140 and the transfer chamber 240. The buffer unit 220 provides a space in which the substrate W rests before being transferred between the transfer chamber 240 and the transfer frame 140. The buffer unit 220 has internal slots (not shown) for placing the substrate W. Multiple slots (not shown) are spaced apart from each other in a third direction 16. The buffer unit 220 has an open side facing the transfer frame 140. The buffer unit 220 has an open side facing the transfer chamber 240.

[0066] The transfer chamber 240 is positioned such that its longitudinal direction is parallel to the first direction 12. The transfer chamber 240 may include one side of the transfer chamber 240 and another side positioned relative to said one side. A plurality of process chambers 260 may be disposed on one or the other side of the transfer chamber 240. A plurality of process chambers 260 may be disposed on both sides of the transfer chamber 240. A plurality of process chambers 260 disposed on one side of the transfer chamber 240 and a plurality of process chambers 260 disposed on the other side of the transfer chamber 240 may be arranged symmetrically relative to the transfer chamber 240. Some of the plurality of process chambers 260 may be disposed along the longitudinal direction of the transfer chamber 240. Furthermore, some of the plurality of process chambers 260 may be disposed stacked on top of each other in the third direction 16. That is, on one side of the transfer chamber 240, the process chambers 260 may be configured in an A×B configuration. Here, A refers to the number of process chambers 260 provided in a row along the first direction 12, and B refers to the number of process chambers 260 provided in a row along the third direction 16. For example, when four or six process chambers 260 are provided on one side of the transfer chamber 240, the multiple process chambers 260 can be configured in a 2×2 or 3×2 configuration. The number of process chambers 260 can be increased or decreased. The number of process chambers 260 can be provided in various numbers depending on the floor area or process efficiency. Unlike the above, process chambers 260 can be provided on only one side of the transfer chamber 240. In addition, process chambers 260 can be provided as a single layer on one or both sides of the transfer chamber 240.

[0067] The transfer chamber 240 transfers substrate W between the buffer unit 220 and the process chamber 260, and between the process chambers 260. A guide rail 242 and a main robotic arm 244 are configured to form the transfer chamber 240. The guide rail 242 is positioned such that its longitudinal direction is parallel to a first direction 12. The main robotic arm 244 is mounted on the guide rail 242 and moves linearly along the first direction 12 on the guide rail 242. The main robotic arm 244 includes a base 244a, a body 244b, and a main arm 244c. The base 244a is mounted so as to be movable along the guide rail 242. The body 244b is coupled to the base 244a. The body 244b is configured to be movable on the base in a third direction 16. Furthermore, the body 244b is configured to be rotatable on the base 244a. The main arm 244c is coupled to the body 244b and configured to be movable forward and backward relative to the body 244b. Multiple main arms 244c are configured to be driven individually. The main arms 244c are arranged to be stacked on a third-party axis 16 in a spaced-apart state.

[0068] A substrate processing apparatus 300 for performing liquid processing processes on a substrate W is provided to a process chamber 260. The substrate processing apparatus 300 may have different structures depending on the type of liquid processing process to be performed. Conversely, the substrate processing apparatus 300 within each process chamber 260 may have the same structure. Optionally, multiple process chambers 260 may be divided into multiple groups, and the substrate processing apparatus 300 within the same group of process chambers 260 may have the same structure, while the substrate processing apparatus 300 within different groups of process chambers 260 may have different structures.

[0069] Figure 2 To illustrate an exemplary embodiment of the present invention, Figure 1 A cross-sectional view of the substrate processing equipment provided in the process chamber.

[0070] refer to Figure 2 The substrate processing equipment 300 includes a processing container 320, a substrate support unit 340, a lifting unit 360, a liquid supply unit 390, and a heating unit 500.

[0071] The substrate processing apparatus 300 may include a chamber 310. The chamber 310 provides a sealed internal space. A processing container 320 is disposed within the internal space of the chamber 310. A fan filter unit 315 is mounted on the upper portion of the chamber 310. The fan filter unit 315 generates a vertical airflow within the chamber 310. The fan filter unit 315 generates a downward airflow within the chamber 310. The fan filter unit 315 is a device that modularizes a filter and an air supply fan into a single unit; it filters high-humidity outdoor air and supplies the filtered air to the interior of the chamber 310. The high-humidity outdoor air passes through the fan filter unit 315 and is supplied to the chamber 310, forming a vertical airflow within the internal space of the chamber 310. This vertical airflow provides a uniform airflow in the upper portion of the substrate W. Contaminants generated during the process of processing the substrate W (e.g., fumes) are discharged to the outside of the processing container 320 along with the air included in the vertical airflow, thereby maintaining a high level of cleanliness inside the processing container 320.

[0072] The processing container 320 has a cylindrical shape with an open top. The processing container 320 includes a first recycling container 321 and a second recycling container 322. The first recycling container 321 and the second recycling container 322 recycle different processing liquids from the processing liquid used in the process. The first recycling container 321 is provided in a ring-like shape surrounding the substrate support unit 340. The second recycling container 322 is provided in a ring-like shape surrounding the substrate support unit 340. In an exemplary embodiment, the first recycling container 321 is provided in a ring-like shape surrounding the second recycling container 322. The second recycling container 322 can be provided by insertion into the first recycling container 321. The height of the second recycling container 322 may be greater than the height of the first recycling container 321. The second recycling container 322 may include a first protective portion 326 and a second protective portion 324. The first protective portion 326 may be provided at the top of the second recycling container 322. The first protective portion 326 is formed to extend toward the substrate support unit 340, and the first protective portion 326 may be formed to slope upward toward the substrate support unit 340. In the second recycling container 322, a second protective portion 324 may be provided at a position spaced downward from the first protective portion 326. The second protective portion 324 is formed to extend toward the substrate support unit 340, and the second protective portion 324 may be formed to slope upward toward the substrate support unit 340. The space between the first protective portion 326 and the second protective portion 324 serves as a first inlet 324a through which the processed liquid flows. A second inlet 322a is provided at the lower portion of the second protective portion 324. The first inlet 324a and the second inlet 322a may be located at different heights. An opening (not shown) is formed in the second protective portion 324, allowing the processed liquid flowing into the first inlet 324a to flow into a second recycling line 322b provided in the lower portion of the second recycling container 322. The opening (not shown) in the second protective portion 324 may be formed at the lowest height position in the second protective portion 324. The treated liquid recovered to the first recovery container 321 is configured to flow into a first recovery line 321b connected to the bottom surface of the first recovery container 321. The treated liquid introduced into the first recovery container 321 and the second recovery container 322 can be provided to an external treated liquid regeneration system (not shown) via the first recovery line 321b and the second recovery line 322b, respectively, for reuse.

[0073] The lifting unit 360 linearly moves the processing container 320 up and down. As an example, the lifting unit 360 is connected to the second recycling container 322 of the processing container 320 and moves the second recycling container 322 up and down, thereby changing the relative height of the processing container 320 relative to the substrate support unit 340. The lifting unit 360 includes a bracket 362, a moving shaft 364, and a driver 366. The bracket 362 is fixedly mounted on the outer wall of the processing container 320, while the moving shaft 364, which moves vertically by the driver 366, is fixedly connected to the bracket 362. The second recycling container 322 of the processing container 320 is lowered, causing the upper portion of the substrate support unit 340 to protrude towards the upper portion of the processing container 320. Specifically, when the substrate W is loaded into or removed from the substrate support unit 340, the protrusion is higher than the first protective portion 326. Furthermore, during the process, the height of the processing container 320 is adjusted to introduce the processing liquid into predetermined first recovery containers 321 and second recovery containers 322 according to the type of processing liquid supplied to the substrate W. Optionally, the lifting unit 360 may also move the substrate support unit 340 instead of the processing container 320 in the vertical direction. Optionally, the lifting unit 360 may move the entire processing container 320, allowing it to move up and down in the vertical direction. The lifting unit 360 is configured to adjust the relative height between the processing container 320 and the substrate support unit 340, and if the relative height between the processing container 320 and the substrate support unit 340 is adjustable, exemplary embodiments of the processing container 320 and the lifting unit 360 may be provided in various structures and methods according to the design.

[0074] The liquid supply unit 390 is configured to discharge a chemical liquid from the upper portion of the substrate W to the substrate W, and may include one or more chemical liquid discharge nozzles. The liquid supply unit 390 can pump the chemical liquid stored in a storage tank (not shown) to discharge the chemical liquid to the substrate W via the chemical liquid discharge nozzles. The liquid supply unit 390 may include a drive unit (not shown) movable between a process position facing the central region of the substrate W and a standby position outside the substrate W.

[0075] The chemical liquid supplied from the liquid supply unit 390 to the substrate W can vary depending on the substrate processing process. When the substrate processing process is a silicon nitride thin film etching process, the chemical liquid can be a chemical liquid including phosphoric acid (H3PO4). The liquid supply unit 390 may further include a deionized water (DIW) supply nozzle for rinsing the surface of the substrate after the etching process, and an isopropyl alcohol (IPA) discharge nozzle and a nitrogen (N2) discharge nozzle for performing a drying process after rinsing. Although not shown, the liquid supply unit 390 may include a nozzle moving member (not shown) capable of supporting and moving the chemical liquid discharge nozzle. The nozzle moving member (not shown) may include a support shaft (not shown), an arm (not shown), and a driver (not shown). The support shaft (not shown) is located on one side of the processing container 320. The support shaft (not shown) has a rod shape with its longitudinal direction facing a third direction 16. The support shaft (not shown) is configured to be rotatable by the driver (not shown). An arm (not shown) is connected to the upper end of a support shaft (not shown). The arm (not shown) extends vertically from the support shaft (not shown). A chemical liquid discharge nozzle is fixedly connected to a remote end of the arm (not shown). The chemical liquid discharge nozzle can swing together with the arm (not shown) according to the rotation of the support shaft (not shown). The chemical liquid discharge nozzle can swing to a process position and a standby position. Optionally, the support shaft (not shown) can be configured to move vertically. Furthermore, the arm (not shown) can be configured to move forward and backward in its longitudinal direction.

[0076] The substrate support unit 340 supports the substrate W and rotates the substrate W during the process. The substrate support unit 340 includes a spin chuck 342, a window member 348, a rotary driver 349, a chuck pin 346, and a chuck pin moving unit 400.

[0077] The chuck pin 346 is connected to the spin chuck 342. The substrate W is spaced apart from the upper surface of the spin chuck 342 by the chuck pin 346 connected to the spin chuck 342. The substrate W rotates together with the spin chuck 342 and is supported by the chuck pin 346 connected to the spin chuck 342.

[0078] The spin chuck 342 is provided in the shape of a can with an open top and an open bottom. The spin chuck 342 includes a through hole 342a penetrating both the upper and lower surfaces. The spin chuck 342 includes a through hole 342a penetrating in a vertical direction. In this case, the vertical direction can refer to the axial direction of the spin chuck 342, or it can refer to a direction parallel to the rotational axis of the spin chuck 342. The heating unit 500, to be described later, is disposed in the through hole 342a.

[0079] The spin chuck 342 includes a main body portion 3421 and an extension portion 3422 extending upward from the main body portion 3421. The main body portion 3421 and the extension portion 3422 are integrally formed. A through hole 342a is formed to pass through both the main body portion 3421 and the extension portion 3422. The main body portion 3421 is formed to have the same area. The main body portion 3421 is formed to have the same inner diameter. The through hole 342a in the main body portion 3421 is formed to have the same diameter. The extension portion 3422 is formed to gradually increase in area in the upper direction from the main body portion 3421. The inner diameter of the extension portion 3422 is formed to increase in the upper direction. The through hole 342a in the extension portion 3422 is formed to increase in diameter in the upper direction. A heating unit 500, which will be described later, is disposed within the main body 3421, and a laser beam generated by the heating unit 500 is emitted to the substrate W through the extension portion 3422. The extension portion 3422 can be formed so as not to interfere with the size of the laser beam. Thus, the laser beam generated by the heating unit 500 can be emitted to the substrate W without being interfered with by the spin chuck 342.

[0080] The spin chuck 342 can be positioned below the window member 348. The spin chuck 342 can support the edge region of the window member 348. The connection between the spin chuck 342 and the window member 348 can have a sealed structure so that the chemical liquid supplied to the substrate W will not permeate into the heating unit 500.

[0081] Window member 348 is located below substrate W. Window member 348 is disposed below substrate W, which is supported on chuck pin 346. Window member 348 is disposed below substrate W, which is supported by chuck pin 346. Window member 348 may be provided in a shape substantially corresponding to substrate W. For example, when substrate W is a circular wafer, window member 348 may be provided in a substantially circular shape. Window member 348 may have a diameter larger than that of substrate W. However, the invention is not limited thereto, and window member 348 may have the same diameter as substrate W, or may be formed to have a smaller diameter than substrate W.

[0082] A hole 3481 is formed in the window member 348, and a chuck pin 346 is disposed in the hole 3481. The chuck pin 346 can pass through the hole 3481 of the window member 348. The diameter of the hole 3481 of the window member 348 can be larger than the diameter of the chuck pin 346. Thus, the chuck pin 346 can move inside the hole 3481 of the window member 348. At this time, the chuck pin 346 moves in a direction perpendicular to the rotation axis of the spin chuck 342.

[0083] The window member 348 can be made of a material with high light transmittance. Therefore, the laser beam emitted from the heating unit 500 can pass through the window member 348. The window member 348 can be made of a material with excellent corrosion resistance, thus not reacting with chemical liquids. For example, the window member 348 can be provided with materials such as quartz, glass, or sapphire. The window member 348 is a configuration that allows the laser beam to pass through and reach the substrate W, and protects the substrate support member 340 from the effects of chemical liquids, and can be provided in various sizes and shapes according to design.

[0084] Support pins 347 can be connected to window member 348. Multiple support pins 347 can be provided. Support pins 347 can be provided in the edge region of window member 348. Multiple support pins 347 can be arranged to be spaced apart from each other along the edge region of window member 348. Support pins 347 can be configured to project upwards from the upper surface of window member 348. Support pins 347 can support the lower surface of substrate W to separate substrate W from window member 348.

[0085] A rotary actuator 349 rotates a spin chuck 342. The rotary actuator 349 can be any component capable of rotating the spin chuck 342. As an example, the rotary actuator 349 can be provided as a hollow motor. According to an exemplary embodiment, the rotary actuator 349 may include a stator (not shown) and a rotor (not shown). The stator may be fixed in one position, while the rotor may be coupled to the spin chuck 342. The rotor may be coupled to the bottom of the spin chuck 342 to rotate the spin chuck 342. When a hollow motor is used as the rotary actuator 349, the narrower the bottom of the spin chuck 342, the smaller the hollowness of the selectable hollow motor. Therefore, manufacturing costs can be reduced. According to an exemplary embodiment, a cover member (not shown) may be further included for protecting the rotary actuator 349 from chemical liquids.

[0086] A chuck pin 346 is mounted on a spin chuck 342. The chuck pin 346 can be disposed on the spin chuck 342, thus protruding from the upper surface of the spin chuck 342. The chuck pin 346 can be mounted in an extension 3422 of the spin chuck 342. The chuck pin 346 rotates together with the spin chuck 342. Multiple chuck pins 346 can be provided. The multiple chuck pins 346 can be spaced apart from each other. The multiple chuck pins 346 can be arranged in a circular shape when combined. The multiple chuck pins 346 can be disposed along the edge of a through hole 342a formed in the extension 3422. The chuck pin 346 supports a side portion of the substrate W. The chuck pin 346 grips the side portion of the substrate W. The chuck pin 346 separates the substrate W from the window member 348 by a predetermined distance. At least a portion of the chuck pin 346 can be received in a hole 3481 of the window member 348. The chuck pin 346 can be configured to be movable within the hole 3481 of the window member 348. The chuck pin 346 can be coupled to the chuck pin moving unit 400, which will be described later. The chuck pin 346 can be movably configured via the chuck pin moving unit 400. The chuck pin 346 can be configured to move between a contact position in which the chuck pin 346 contacts the side of the substrate W and an open position spaced apart from the side of the substrate W.

[0087] Figure 3 The image shows a cross-sectional view of the chuck pin and chuck pin moving unit according to an exemplary embodiment of the present invention. Figure 4 This is a planar cross-sectional view illustrating the state in which the impact mitigation member according to an exemplary embodiment of the present invention is mounted on the first clutch. Figure 5 The diagram illustrates, schematically, the installed state of the elastic member of the lifting actuator according to an exemplary embodiment of the present invention, and Figure 6 This is a cross-sectional view illustrating a second clutch module according to an exemplary embodiment of the present invention.

[0088] The chuck pin moving unit 400 moves the chuck pin 346. The chuck pin moving unit 400 is coupled to one end of the chuck pin 346 to move the chuck pin 346. The chuck pin moving unit 400 moves the chuck pin 346 in a direction perpendicular to the rotation axis of the spin chuck 342. The chuck pin moving unit 400 moves the chuck pin 346 between a contact position where the chuck pin 346 contacts the side portion of the substrate W and an open position where the chuck pin 346 is spaced apart from the side portion of the substrate W. The chuck pin moving unit 400 moves the chuck pin 346 while the spin chuck 342 is rotating. The chuck pin moving unit 400 can be configured to electrically move the chuck pin 346 of the rotating spin chuck 342 during normal operation.

[0089] refer to Figure 3The chuck pin moving unit 400 includes a first clutch module 420 and a second clutch module 440. The first clutch module 420 may face the second clutch module 440. At least a portion of the first clutch module 420 may face the second clutch module 440. The first clutch module 420 may be configured to be movable in a vertical direction. The first clutch module 420 may be moved in an upward direction to contact the second clutch module 440. When the first clutch module 420 contacts the second clutch module 440, the chuck pin 346 may move to an open position. The first clutch module 420 may be moved in a downward direction to space away from the second clutch module 440. When the first clutch module 420 is spaced away from the second clutch module 440, the chuck pin 346 may move to an engaged position.

[0090] The first clutch module 420 may include a first clutch 421, a fixing member 422, and a bearing member 423.

[0091] The first clutch 421 faces the second clutch 441, which will be described later. At least a portion of the first clutch 421 faces the second clutch 441. The first clutch 421 is configured to be movable in the vertical direction. The first clutch 421 can be moved in the vertical direction by a lift drive 430. The first clutch 421 can be moved in the upward direction to engage with the second clutch 441. In this case, the chuck pin 346 moves to the open position. The first clutch 421 can be moved in the downward direction to be spaced apart from the second clutch 441. In this case, the chuck pin 346 moves to the engaged position. The first clutch 421 is rotatably configured. When the first clutch 421 is spaced apart from the second clutch 441, the first clutch 421 does not rotate. When the first clutch 421 engages with the second clutch 441, the first clutch 421 rotates together with the second clutch 441. When the first clutch 421 engages with the second clutch 441, the first clutch 421 rotates together with the spin chuck 342.

[0092] refer to Figure 4 The first clutch 421 may include an impact mitigation member 4211. The impact mitigation member 4211 may be mounted on the first clutch 421. The impact mitigation member 4211 may be built into the first clutch 421. Multiple impact mitigation members 4211 may be provided. The multiple impact mitigation members 4211 may be arranged to be spaced apart from each other along the outer circumference of the first clutch 421. The impact mitigation member 4211 may be configured as an elastic member. When the first clutch 421 rotates, the impact mitigation member 4211 may compress in the rotational direction of the first clutch 421. In this way, the rotational impact force generated when the first clutch 421 rotates while in contact with the second clutch 441 can be reduced.

[0093] The fixing member 422 does not rotate with the spin chuck 342. The fixing member 422 is configured to be fixed relative to the rotating spin chuck 342. The fixing member 422 is configured not to contact the spin chuck 342. The fixing member 422 is positioned spaced apart from the outer surface of the spin chuck 342. The fixing member 422 is configured to surround the spin chuck 342. For example, the fixing member 422 may be provided in an annular shape surrounding the spin chuck 342. The inner diameter of the fixing member 422 may be larger than the outer diameter of the spin chuck 342. At least a portion of the inner surface of the fixing member 422 faces the outer surface of the spin chuck 342. In this case, the inner diameter of the fixing member 422 may be larger than the outer diameter of the portion of the spin chuck 342 facing the inner surface of the fixing member 422.

[0094] The fixing member 422 does not rotate with the first clutch 421. When the first clutch 421 rotates with the second clutch 441, the fixing member 422 is fixed relative to the first clutch 421. The fixing member 442 supports the first clutch 421.

[0095] A bearing component 423 is disposed between the first clutch 421 and the fixed component 422. The bearing component 423 can be a roller bearing, a crossed roller bearing, or a ball bearing. The bearing component 423 may include an outer ring 4231, an inner ring 4232, and a ball 4233. The outer ring 4231 is connected to the fixed component 422. The inner ring 4232 is connected to the first clutch 421. The ball 4233 is rotatably disposed between the outer ring 4231 and the inner ring 4232. The outer ring 4231 is connected to the fixed component 422 and therefore does not rotate. The outer ring 4231 is configured to be fixed relative to the rotating spin chuck 342. When the first clutch 421 rotates, the outer ring 4231 is configured to be fixed relative to the first clutch 421. The inner ring 4232 is configured to rotate with the first clutch 421 when the first clutch 421 rotates. When the first clutch 421 does not rotate, the inner ring 4232 is configured not to rotate. When the inner ring 4232 rotates together with the first clutch 421, the ball 4233 can reduce the friction caused by rotation. Multiple balls 4233 can be provided. The multiple balls 4233 can be arranged to be spaced apart from each other in the space between the outer ring 4231 and the inner ring 4232.

[0096] The chuck pin moving unit 400 includes a lift driver 430. The lift driver 430 moves a first clutch module 420 in the vertical direction. The lift driver 430 also moves a first clutch 421, a fixing member 422, and a bearing member 423 in the vertical direction. The lift driver 430 provides driving force so that the first clutch 421, the fixing member 422, and the bearing member 423 can move in the vertical direction. For example, the lift driver 430 can be configured as a motor or a cylinder.

[0097] The lift actuator 430 may overlap with the non-rotating portion of the first clutch module 420 along the rotational axis of the spin chuck 342. For example, the lift actuator 430 may overlap with the fixing member 422 or the outer ring 4231 of the first clutch module 420 along the rotational axis of the spin chuck 342. The lift actuator 430 may overlap with both the fixing member 422 and the outer ring 4231 along the rotational axis of the spin chuck 342. The lift actuator 430 may overlap with the midpoint between the fixing member 422 and the outer ring 4231 along the rotational axis of the spin chuck 342.

[0098] refer to Figure 5 When the lift actuator 430 is configured as a cylinder, it may include an elastic member 432. The elastic member 432 is disposed between the first clutch module 420 and the lift actuator 430. When the first clutch module 420 contacts the second clutch module 440, the elastic member 432 can compress to reduce impact. Multiple elastic members 432 may be provided. These multiple elastic members 432 may be disposed on both sides of the center of the lift actuator 430. Thus, when the first clutch module 420 rises and contacts the second clutch module 440, even if the first clutch module 420 and the second clutch module 440 are not horizontal, they can be aligned horizontally by the elastic members 432 disposed on both sides of the lift actuator 430.

[0099] The second clutch module 440 is disposed above the first clutch module 420. The second clutch module 440 is spaced apart from the first clutch module 420 in the vertical direction. The second clutch module 440 rotates together with the spin chuck 342. The second clutch module 440 is connected to the chuck pin 346.

[0100] The second clutch module 440 includes a second clutch 441, a base member 442, a first moving member 443, a second moving member 444, and a third moving member 445.

[0101] The second clutch 441 faces the first clutch 421. When the first clutch 421 rises, the second clutch 441 engages with the first clutch 421. The second clutch 441 can move upwards while engaging with the first clutch 421. The second clutch 441 includes a flat plate portion 4412 facing the first clutch 421 and a support portion 4414 extending upwards from the flat plate 4412. The flat plate 4412 engages with the first clutch 421. The support portion 4414 is configured to have a direct diameter smaller than the diameter of the flat plate portion 4412. One end of the support portion 4414 is coupled to the flat plate portion 4412, while the other end of the support portion 4414 is coupled to a first moving member 443, which will be described later.

[0102] The base member 442 is connected to the spin chuck 342. The base member 442 guides the movement of the chuck pin 346. The base member 442 also guides the movement of the first moving member 443 and the second moving member 444, which will be described later. The base member 442 includes a first portion 4422 having a longitudinal direction corresponding to the direction of movement (vertical direction) of the first clutch 421, and a second portion 4424 extending from the first portion 4422 and extending in a direction perpendicular to the longitudinal direction of the first portion 4422.

[0103] A first moving member 443 is connected to a base member 442. The first moving member 443 is connected to a first portion 4422 of the base member 442. The first moving member 443 is movably connected to the first portion 4422 of the base member 442. The longitudinal direction of the first moving member 443 corresponds to the longitudinal direction of the first portion 4422 of the base member 442. The first moving member 443 is movably disposed on the first portion 4422 of the base member 442. The direction of movement of the first moving member 443 may be parallel to the longitudinal direction of the first portion 4422 of the base member 442. The first moving member 443 is connected to a second clutch 441. The first moving member 443 is connected to a support portion 4414 of the second clutch 441. When the second clutch 441 rises while engaging with the first clutch 421, the first moving member 443 moves upward together with the second clutch 441. At this time, the first moving member 443 rises along the first portion 4422 of the base member 442.

[0104] The second moving member 444 is connected to the chuck pin 346. The second moving member 444 is connected to the base member 442. The second moving member 444 is connected to the second portion 4424 of the base member 442. The second moving member 444 is movably connected to the second portion 4424 of the base member 442. The second moving member 444 has a longitudinal direction corresponding to the second portion 4424 of the base member 442. The second moving member 444 is movably disposed on the second portion 4424 of the base member 442. When the second clutch 441 rises in contact with the first clutch 421, the second moving member 444 moves away from the rotation axis of the spin chuck 342 via the third moving member 445, which will be described later. In this case, the chuck pin 346 connected to the second moving member 444 moves to the open position.

[0105] One end of the third moving member 445 can be connected to the first moving member 443, and the other end can be connected to the second moving member 444. One end of the third moving member 445 can be hinged to the first moving member 443, and the other end can be hinged to the second moving member 444. Hereinafter, the portion of the third moving member 445 that is hinged to the first moving member 443 is referred to as the first hinge portion, and the portion of the third moving member 445 that is hinged to the second moving member 444 is referred to as the second hinge portion. When the first moving member 443 moves upward, the third moving member 445 rotates at the first hinge portion and the second hinge portion. The first hinge portion of the third moving member 445 rises together with the upward movement of the first moving member 443, while the second hinge portion of the third moving member 445 moves together with the second moving member 444 in a direction away from the axis of rotation of the spin chuck 342. In this case, the chuck pin 346 moves to the open position.

[0106] refer to Figure 6 A partition wall P can be disposed between the first clutch module 420 and the second clutch module 440. The second clutch 441 can be located between the partition wall P and the first clutch module 420. The flat plate portion 4412 of the second clutch 441 can be located between the partition wall P and the first clutch module 420. The upward movement range of the first clutch module 420 or the second clutch 441 can be limited by the partition wall P. A hole can be formed in the partition wall P through which the support portion 4414 of the second clutch 441 passes. A sealing member S can be disposed between the inner surface of the hole in the partition wall P and the support portion 4414 of the second clutch 441. The sealing member S can be configured as an O-ring. Through the sealing member S, the processing liquid supplied to the substrate W can be prevented from flowing to the first clutch module 420 or the lift actuator 430.

[0107] Figure 7 The diagram is intended to schematically illustrate a state in which the chuck pin is movably positioned between a contact position and an open position while the substrate rotates, according to an exemplary embodiment of the present invention. Figure 8 This diagram illustrates the state of the chuck pin moving unit when the chuck pin is in the open position according to an exemplary embodiment of the present invention, and Figure 9 This is a view illustrating the state of the locking pin moving unit when the pin is in the contact position according to an exemplary embodiment of the present invention.

[0108] refer to Figure 7The chuck pin moving unit 400 can move the chuck pin 346 while the spin chuck 342 or the substrate W is rotating. When the spin chuck 342 or the substrate W rotates, the chuck pin moving unit 400 can move the chuck pin 346 between the open position and the contact position. Even if the spin chuck 342 or the substrate W does not stop, the chuck pin moving unit 400 can always move the chuck pin 346.

[0109] refer to Figure 8 and Figure 9 The spin chuck 342 rotates the substrate W at a first speed v1 or a second speed v2, which is faster than the first speed v1. (Reference) Figure 8 While the substrate W is rotating at a first speed v1, the chuck pin moving unit 400 moves the chuck pin 346, causing the chuck pin 346 to be in the open position. In this case, the first clutch module 420 moves upward via the lift driver 430. When the first clutch 421 moves upward, it engages with the second clutch 441. The first clutch 421 and the second clutch 441 continue to move upward via the lift driver 430 while in contact. The first clutch 421 and the second clutch 441 move upward via the lift driver 430 while in contact, and are configured to move at most to the position of the partition wall P. When the second clutch 441 moves upward, the first moving member 443 connected to the second clutch 441 moves upward along the first portion 4422 of the base member 442. When the first moving member 443 moves upward, the first hinge portion of the third moving member 445 rises together with the first moving member 443, and correspondingly, the second hinge portion of the third moving member 445 moves the second moving member 444 in a direction away from the rotation axis of the spin chuck 342. The second moving member 444 is pushed by the third moving member 445 in a direction away from the rotation axis of the spin chuck 342, and correspondingly, the chuck pin 346 connected to the second moving member 444 also moves to the open position.

[0110] refer to Figure 9The chuck pin moving unit 400 moves the chuck pin 346 so that the chuck pin 346 is in the contact position, while the base plate W rotates at a second speed v2. In this case, the first clutch module 420 moves in the descending direction by the lift driver 430. As the first clutch 421 moves in the descending direction, the first clutch 421 is spaced apart from the second clutch 441. When the second clutch 441 is lowered, the first moving member 443 connected to the second clutch 441 moves downward along the first portion 4422 of the base member 442. When the first moving member 443 moves downward, the first hinge portion of the third moving member 445 is lowered together with the first moving member 443, and correspondingly, the second hinge portion of the third moving member 445 moves the second moving member 444 in a direction closer to the rotation axis of the spin chuck 342. The second moving member 444 is pushed in a direction closer to the rotation axis of the spin chuck 342 by the third moving member 445, and correspondingly, the chuck pin 346 connected to the second moving member 444 moves to the contact position to grip the side portion of the substrate W.

[0111] See again Figure 2 The substrate processing apparatus 300 includes a heating unit 500. The heating unit 500 is configured to emit a laser beam onto a substrate W. The heating unit 500 may be located on a surface of the substrate support unit 340 that is lower than the window member 348. The heating unit 500 can emit a laser beam toward the substrate W located on the substrate support unit 340. The laser beam emitted from the heating unit 500 can pass through the window member 348 of the substrate support unit 340 to be emitted onto the substrate W. Therefore, the substrate W can be heated to a set temperature. The heating unit 500 may include a laser beam generating member (not shown), a laser beam emitting member 500, and a laser beam transmission member. The laser beam generating member (not shown) may be disposed outside the chamber 310. The laser beam emitting member 500 may include, for example, a lens. The laser beam emitting member 500 may include multiple lenses. The laser beam emitting member 500 may be disposed inside a spin chuck 342. The laser beam emitting member may be configured as a conduit connecting the laser beam generating member (not shown) and the laser beam emitting member 500. The laser beam transmission member can transmit the laser beam generated from the laser beam generating member (not shown) to the laser beam emitting member 500. The laser beam emitting member 500, which receives the laser beam through the laser beam transmission member, can emit the laser beam to the substrate W. While the heating unit 500 has been described above as being configured to emit a laser beam, the invention is not limited thereto, and the heating unit 500 can be configured as various heat sources capable of heating the substrate W. For example, the heating unit 500 can be configured as an LED or a halogen heater.

[0112] The process of moving the chuck pin 346 by the chuck pin moving unit 400 will be described in detail below with reference to the accompanying drawings.

[0113] The following will be referenced Figures 10 to 14 A substrate processing method according to an exemplary embodiment of the present invention is described. Figure 10 This is a flowchart of a substrate processing method according to an exemplary embodiment of the present invention, and Figures 11 to 14 Sequential icons Figure 10 A diagram of the substrate processing method.

[0114] refer to Figure 10 According to an exemplary embodiment of the present invention, the substrate processing method includes a substrate alignment operation S100, a first liquid supply operation S200, a liquid film heating operation S300, and a second liquid supply operation S400.

[0115] Figure 11 This diagram illustrates the substrate alignment operation prior to the start of the substrate processing method according to an exemplary embodiment of the present invention. (Reference) Figure 11 Before the process begins, substrate W is transferred to substrate support unit 340. After substrate W is transferred to the upper portion of spin chuck 342, the center of substrate W is aligned with the center of spin chuck 342 or window member 348. In this case, chuck pin 346 is in the open position. When the center of substrate W is aligned with the center of spin chuck 342 or window member 348, chuck pin 346 moves to the contact position to support the side portion of substrate W. In this case, chuck pin 346 is moved by chuck pin moving unit 400.

[0116] Figure 12 The illustration depicts a process for forming a molten pool on a substrate according to an exemplary embodiment of the present invention. (Reference) Figure 12With the substrate W supported by the chuck pin 346 of the substrate support unit 340, the spin chuck 342 rotates the substrate W at a first speed v1. The liquid supply unit 390 forms a first liquid film C1 on the upper surface of the substrate W by supplying the first liquid to the substrate W rotating at the first speed v1. The first liquid film C1 can be a molten pool with a predetermined thickness. When the first liquid is supplied to the substrate W, the chuck pin 346 is in the open position. That is, the first liquid film C1 is formed by supplying the first liquid to the substrate W rotating at the first speed v1 while the chuck pin 346 is in the open position, spaced apart from the side portion of the substrate W. When the chuck pin 346 is in the contact position where the chuck pin 346 contacts the side portion of the substrate W, there is a problem that the first liquid flows down the chuck pin 346 when the first liquid film C1 is formed, thus making it difficult to maintain a certain amount of liquid film. However, according to the substrate processing method of an exemplary embodiment of the present invention, when the first liquid film C1 is formed, it is formed with the chuck pin 346 in an open position spaced apart from the side portion of the substrate W, thereby preventing the first liquid from flowing down and maintaining a certain amount of liquid film. Furthermore, since the chuck pin 346 is spaced apart from the side portion of the substrate W, there is an advantage that the first liquid film (molten pool) can be easily formed by the surface tension of the first liquid film C1.

[0117] Figure 13 This diagram illustrates the operation of heating the first liquid film according to a substrate processing method based on an embodiment of the present invention. (Reference) Figure 13 When a first liquid film C1 of predetermined thickness is formed, the rotation of the substrate W stops, and the first liquid supply from the liquid supply unit 390 stops. As a result, the surface of the substrate W is covered by the first liquid film C1 (forming a processing liquid pool). Here, the processing liquid can be an aqueous solution of phosphoric acid. The substrate W and the first liquid film C1 are heated to a temperature suitable for processing the substrate W. The substrate W and the first liquid film C1 can be heated by the heating unit 500. At this time, the chuck pin 346 is in the open position.

[0118] The heating unit 500 can be powered by any one of a laser, LED, or halogen heater. The substrate W is processed (e.g., an etching process, a wet etching process) by maintaining its surface covered with a first liquid film C1 of a heated liquid for a predetermined time. During this process, the spin chuck 342 rotates the substrate W at a first speed v1. The first liquid on the substrate W is agitated by rotating the substrate W approximately half a turn in both the forward and reverse rotation directions. This promotes etching and improves the in-plane uniformity of the etched amount.

[0119] Figure 14This diagram illustrates a second liquid supply operation according to an embodiment of the present invention. (Reference) Figure 14 After heating the first liquid film C1, a second liquid is supplied to the substrate W to form a second liquid film C2. At this time, the spin chuck 342 rotates the substrate W at a second speed v2. Furthermore, the chuck pin moving unit 400 moves the chuck pin 346 to a contact position where the chuck pin 346 contacts a side portion of the substrate W. The second liquid can be the same liquid as the first liquid. The second liquid can be an aqueous solution of phosphoric acid. The thickness of the second liquid film C2 can be thinner than the thickness of the first liquid film C1. The second speed v2 can be faster than the first speed v1. For example, the rotation at the first speed v1 can be a low speed, while the rotation at the second speed v2 can be a high speed. For example, the first speed v1 can be 20 RPM or less.

[0120] according to Figures 12 to 14 The substrate processing can be repeated multiple times. When according to Figures 11 to 14 After the substrate processing is completed, a rinsing process is performed, in which a rinsing solution is supplied to the substrate W to remove byproducts generated from the surface of the substrate W by reacting with the processing solution. The rinsing solution can be pure water (DIW).

[0121] According to the substrate processing method of an exemplary embodiment of the present invention, in the first liquid supply operation and the liquid film heating operation, the chuck pin 346 is moved to the open position, and in the second liquid supply operation, the chuck pin 346 is moved to the contact position. At this time, according to a general spin chuck structure that moves the chuck pin between the open and contact positions using a 90-degree rotatable rotary cylinder, the chuck pin can only move when the spin chuck stops. Therefore, whenever each operation of the substrate processing method is performed, when the spin chuck must be stopped and the chuck pin must be moved, the process takes a long time and the process efficiency decreases. Furthermore, when the spin chuck stops in each process operation due to stopping the spin chuck and moving the chuck pin, a liquid film with uniform thickness may not be obtained, or the liquid film may become over-hardened, leading to liquid film rupture. Furthermore, when the substrate processing reaches the state where the chuck pin contacts the side portion of the substrate, the chuck is not stopped in each operation of the substrate processing method in the spin chuck structure in the related art. As mentioned above, there is a problem that the liquid film flows along the surface of the chuck pin and thus cannot form a certain amount of liquid film. Moreover, since the contact area between the chuck pin and the side portion of the substrate will reduce the surface tension of the liquid film, it is difficult to form a liquid film of a certain thickness.

[0122] However, according to an exemplary embodiment of the present invention, by providing a structure in which the chuck pin 346 of the rotating spin chuck 342 can be opened and closed at any time using a clutch module of a mechanical device, it is possible to move the chuck pin 346 even when the spin chuck 342 is rotating, thereby solving the above-mentioned problem.

[0123] Meanwhile, the substrate processing apparatus and substrate processing method according to the above exemplary embodiments can be controlled and executed by a controller (not shown). The configuration, storage, and management of the controller can be implemented in the form of hardware, software, or a combination of hardware and software. The configuration data and / or software of the controller can be stored in volatile or non-volatile storage devices, such as read-only memory (ROM); or memory, such as, for example, random access memory (RAM), memory chips, devices, or integrated circuits, or storage media, such as compact disks (CDs), digital versatile discs (DVDs), magnetic disks, or magnetic tapes, which are optically or magnetically recordable and machine-readable (for example, computers).

[0124] The foregoing detailed description illustrates the present invention. Furthermore, the foregoing is intended to describe exemplary or various exemplary embodiments for carrying out the technical spirit of the invention, and the invention can be used in various other combinations, modifications, and environments. That is, the foregoing can be modified or corrected within the scope of the inventive concept disclosed in this specification, the scope equivalent to the disclosed scope, and / or the scope of technology or knowledge in the art. Therefore, the foregoing detailed description of the invention is not intended to limit the invention to the disclosed exemplary embodiments. Moreover, the appended claims should be interpreted to include other exemplary embodiments. Such modified exemplary embodiments should not be interpreted separately from the technical spirit or prospects of the invention.

Claims

1. An apparatus for processing a substrate, the apparatus comprising: A processing container having a processing space; A support unit for supporting and rotating the substrate in the processing space; A liquid supply unit for supplying processing liquid to the substrate supported by the support unit; as well as A heating unit, the heating unit being used to heat the substrate; The support unit includes: Spin chuck; A rotary actuator for rotating the spin chuck; A chuck pin, said chuck pin being mounted on the spin chuck so as to rotate together with the spin chuck; and A chuck pin moving unit is configured to move the chuck pin between a contact position where the chuck pin contacts a side portion of the substrate and an open position where the chuck pin is spaced apart from the side portion of the substrate. The chuck pin moving unit moves the chuck pin while the substrate is rotated by the spin chuck; The chuck pin moving unit includes: A first clutch module, the first clutch module including a first clutch, the first clutch being configured to move in a vertical direction by a lift drive; and A second clutch module, comprising a second clutch facing the first clutch and connected to the chuck pin. The second clutch module rotates together with the spin chuck.

2. The device according to claim 1, wherein when the first clutch engages with the second clutch, the chuck pin moves from the engagement position to the open position.

3. The device according to claim 1, wherein the chuck pin is in the contact position when the first clutch is spaced apart from the second clutch.

4. The device according to claim 1, wherein when the first clutch engages with the second clutch, the first clutch and the second clutch rotate together.

5. The device according to claim 1, wherein the first clutch module comprises: The first clutch; A fixing component that does not rotate with the spin chuck; as well as A bearing component is disposed between the first clutch and the fixed component.

6. The device of claim 5, wherein the bearing member comprises an outer ring connected to the fixed member, an inner ring connected to the first clutch, and a ball disposed between the outer ring and the inner ring, and When the first clutch engages with the second clutch, the first clutch and the second clutch rotate together relative to the fixed member.

7. The device of claim 5, wherein the elastic member is disposed between the lifting drive and the first clutch.

8. The device according to claim 4, wherein the shock-reducing component is disposed inside the first clutch, and When the first clutch engages with the second clutch and rotates together with the second clutch, the shock-reducing member reduces the impact generated in the rotational direction of the first clutch.

9. The device according to claim 1, wherein the second clutch module comprises: The second clutch; A base member comprising a first portion having a longitudinal direction corresponding to the vertical direction, and a second portion extending from the first portion and extending in a direction perpendicular to the longitudinal direction of the first portion; A first movable member is movably connected to the first portion of the base member; A second movable member is connected to the chuck pin and movably connected to the second portion of the base member; as well as A third moving member, the third moving member having one end hinged to the first moving member and the other end hinged to the second moving member, and The second clutch is connected to the first moving member.

10. The device of claim 9, wherein the second clutch comprises: The flat plate portion faces the first clutch; as well as The support section is used to connect the plate and the first movable component.

11. The device according to claim 10, wherein a partition wall is disposed between the first clutch module and the second clutch module, and The second clutch is located between the partition wall and the first clutch.

12. The device of claim 11, wherein a hole for the support portion of the second clutch to pass through is formed in the partition wall, and A sealing member is disposed between the inner surface of the hole in the partition wall and the support portion of the second clutch.

13. The device according to claim 2 or 3, wherein the spin chuck rotates such that the substrate rotates at a first speed or a second speed faster than the first speed. When the substrate rotates at the first speed, the first clutch engages with the second clutch, and When the substrate rotates at the second speed, the first clutch is disengaged from the second clutch.

14. A method for processing a substrate, the method comprising the following steps: A first liquid supply operation supplies a first liquid to the substrate, which is rotating at a first speed in an open state. In the open state, a chuck pin for supporting a side portion of the substrate is located in an open position spaced apart from the side portion of the substrate, and a first liquid film is formed on the substrate. A liquid film heating operation is performed after the first liquid supply operation to heat the first liquid film formed on the substrate in the open state. as well as A second liquid supply operation, following the liquid film heating operation, involves supplying a second liquid to the substrate, which is rotating at a second speed faster than the first speed in a contact state. In this contact state, the chuck pin is positioned at a contact position where it contacts the side portion of the substrate to support the side portion of the substrate. The change from the open state to the contact state is performed while the substrate is rotating.

15. The method of claim 14, wherein the first liquid and the second liquid are the same, and The first liquid is an aqueous solution of phosphoric acid.

16. The method of claim 14, wherein the amount of second liquid supplied per unit time in the second liquid supply operation is greater than the amount of first liquid supplied per unit time in the first liquid supply operation.

17. The method of claim 14, wherein during the liquid film heating operation, the substrate rotates at the first speed and the first liquid is not supplied to the substrate.

18. A method for processing a substrate using the apparatus for processing a substrate according to claim 1, the method comprising the steps of: A first liquid supply operation supplies a first liquid to the substrate, which is rotating at a first speed in an open state, wherein the chuck pin is located in the open position and a first liquid film is formed on the substrate; A liquid film heating operation is performed after the first liquid supply operation, wherein the first liquid film formed on the substrate in the open state when the chuck pin is in the open position is heated. as well as A second liquid supply operation, following the liquid film heating operation, supplies a second liquid to the substrate, which is rotating at a second speed faster than the first speed in a contact state, wherein the chuck pin is located in the contact position. The change of the chuck pin from the open state to the contact state is performed simultaneously with the rotation of the substrate.

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