A high-efficiency rectifying surface of high-integration multi-diode structure

Abstract

This invention discloses a highly integrated multi-diode structure for efficient rectifier surface, solving the problems of low integration, low efficiency, and small power capacity of rectifier surface circuits. The lower surface of the rectifier surface dielectric substrate (1) is completely covered by a metal layer, and the upper surface contains m rows and n columns of rectifier surface units (2) of the same size and shape, where m and n are positive integers greater than or equal to 2. The rectifier surface units (2) in adjacent rows are arranged in a staggered manner, and the adjacent rectifier surface units (2) in each row are connected left and right, sharing two vertically symmetrical open lines (24). The first rectifier surface unit (2) in each row is connected to the DC output port A1 through a DC combining network (3), and the right side of the nth rectifier surface unit (2) in each row is connected to the DC output port A2 through the DC combining network (3). A1 and A2 are soldered together by wires to form the total DC output port.

Description

Technical Field

[0001] This invention belongs to the field of microwave radio frequency device technology, and particularly relates to rectifier surfaces in microwave radio frequency devices. Background Technology

[0002] Microwave rectifier surfaces, by loading Schottky diodes onto the surface of a periodic electromagnetic structure, can capture spatial electromagnetic energy within a specific frequency range and convert it into direct current (DC) energy. They have wide applications in long-distance wireless power transmission and wireless energy harvesting systems. For example, in remote areas where laying power lines is difficult, these rectifier surfaces can solve the problem of wiring electrical equipment, enabling long-distance power transmission. On the other hand, in the Internet of Things (IoT) field, these rectifier surfaces can collect electromagnetic energy distributed throughout space and convert it into DC energy, thus meeting the DC power requirements of small, low-power electronic devices in the IoT, such as sensors. This avoids battery replacements, solves the power supply problem for these electronic devices, enables energy reuse, improves energy efficiency, and achieves energy conservation and emission reduction goals.

[0003] The paper "A metasurface for conversion of electromagnetic radiation to DC" proposes a metasurface electromagnetic energy harvester based on a small electric resonator. This device can collect and rectify electromagnetic energy at an operating frequency of 3 GHz. However, the complex matching network in the rectifying surface increases circuit losses, reducing efficiency and hindering miniaturization and integration of the rectifying surface. The paper "A metamaterial electromagnetic energy rectifying surface with high harvesting efficiency" proposes a rectifying surface for electromagnetic energy harvesting at an operating frequency of 2.45 GHz. However, this rectifying surface employs a multi-layer structure, resulting in high circuit board manufacturing costs.

[0004] In summary, the main challenges currently facing rectifier surfaces are how to simplify the matching circuit between the energy harvesting unit and the rectifier section, reduce the loss of the rectifier surface, improve the efficiency of the rectifier surface, and at the same time increase the integration of the rectifier surface, increase its power capacity, and reduce the circuit processing cost. Summary of the Invention

[0005] The purpose of this invention is to propose a highly integrated multi-diode structure for efficient rectifier surfaces, overcoming the shortcomings of complex structures in existing rectifier surface matching circuits and output filter circuits, and solving the problems of low integration and small power capacity of existing rectifier surfaces.

[0006] The technical solution of this invention is as follows: The lower surface of the dielectric substrate 1 is completely covered by a metal layer, which is ground 4. The upper surface contains m rows and n columns of rectifier surface units 2 of the same size and shape, where m and n are positive integers greater than or equal to 2. The rectifier surface units 2 at corresponding positions in adjacent rows are arranged alternately. The adjacent units of the n rectifier surface units 2 in each row are connected left and right, sharing two vertically symmetrical open lines 24. The left side of the first rectifier surface unit 2 in each row occupies two vertically symmetrical open lines 24, and its left side is connected to the DC output port A1 through a DC combining network 3. The nth rectifier surface unit in each row... 2. The right side has two symmetrical open lines 24, which are connected to the DC output port A2 via a DC combining network 3. The two DC output ports A1 and A2 are soldered together by wires to form the total DC output port. Each rectifier surface unit 2 includes one energy receiving unit 21, four first microstrip lines 221, two second microstrip lines 222, four Schottky diodes 23, four open lines 24, and four grounding pads 25. The energy receiving unit 21 is located at the center of the rectifier surface unit 2. The four first microstrip lines 221 are located at the left and right ends of the energy receiving unit 21, respectively. The four Schottky diodes 23 are symmetrical about the center of the energy receiving unit 21, with one end connected to the energy receiving unit 21 and the other end connected to the anode of the Schottky diode 23. The anodes of the four Schottky diodes 23 are symmetrical about the center of the energy receiving unit 21, with the cathodes connected to the end of the first microstrip line 221 furthest from the energy receiving unit 21, and the cathodes connected to the grounding pads 25. The four grounding pads 25 are rectangular, arranged horizontally, and symmetrical about the energy receiving unit 21. Each grounding pad 25 contains four diodes of similar size and shape. The grounding vias 251 are equidistantly arranged horizontally; two second microstrip lines 222 are located on the left and right sides of the energy receiving unit 21, symmetrical about the energy receiving unit 21, one end of which is connected to the center of the vertical side of the energy receiving unit 21, and the other end is connected to the open line 24; four open lines 24 are rectangular, all the same size and shape, arranged vertically, symmetrical about the energy receiving unit 21, two open lines 24 are located on the leftmost side of the rectifier surface unit 2, and the other two are located on the rightmost side, and the two open lines 24 at the top and bottom are connected to the second microstrip lines 222.

[0007] The principle of the technical solution of this invention is as follows: Electromagnetic waves in free space irradiate the rectifier surface, and the energy receiving unit 21 on the rectifier surface receives the electromagnetic wave energy. This energy enters the Schottky diode 23 through the first microstrip line 221 and is converted into DC energy. The first microstrip line 221 cancels the imaginary part of the Schottky diode 23, and the real part is directly matched with the energy receiving unit 21, thereby simplifying the matching circuit. The second microstrip line 222 is connected to the horizontal center of the energy receiving unit 21. This part has zero impedance to the fundamental wave, thus eliminating the need for a fundamental wave filter circuit. The open circuit 24 only filters the second and third harmonics and other higher harmonics. Finally, the DC synthesizing network 3 contains only DC energy. The rectifier surface units 2 in corresponding positions in the upper and lower rows are staggered to reduce the coupling between the rectifier surface units 2. Adjacent rectifier surface units 2 in the same row share the open circuit 24, simplifying the DC filter circuit. Each rectifier surface unit 2 contains four Schottky diodes 23 to increase the power capacity of the rectifier surface. The DC energy of all rectifier surface units 2 is synthesized through DC combining network 3, while the ground 4 of the rectifier surface also serves as DC ground.

[0008] Advantages and beneficial effects of the present invention:

[0009] This highly integrated multi-diode structure provides a high-efficiency rectifier surface that directly matches Schottky diodes to the energy receiving unit, eliminating the need for a fundamental frequency filter circuit. It boasts advantages such as simple structure, high integration, and high efficiency. Furthermore, each rectifier surface unit contains four diodes, increasing the power capacity of the rectifier surface. Because this rectifier surface is a single-layer circuit board, it is easier to manufacture and less expensive than multi-layer rectifier surfaces. Attached Figure Description

[0010] Figure 1 This is a schematic diagram of the overall structure of the present invention.

[0011] Figure 2 This is a schematic diagram of the rectifying surface unit structure of the present invention.

[0012] Figure 3 This is a side view of the overall structure of the present invention.

[0013] Figure 4 This is a simulation result of the energy absorption efficiency of the rectifier surface of the present invention.

[0014] Figure 5 Simulation results of the efficiency and output voltage of the rectifier surface unit of the present invention as a function of input power. Detailed Implementation

[0015] The present invention will be further described below with reference to the accompanying drawings and specific embodiments: Figure 1As shown, the lower surface of the surface dielectric substrate 1 is completely covered by a metal layer, which is ground 4. The upper surface contains m rows and n columns of rectifier surface units 2 of the same size and shape, where m and n are positive integers greater than or equal to 2. The rectifier surface units 2 at corresponding positions in adjacent rows are arranged alternately. The adjacent units of the n rectifier surface units 2 in each row are connected left and right, sharing two vertically symmetrical open lines 24. The left side of the first rectifier surface unit 2 in each row occupies two vertically symmetrical open lines 24, and its left side is connected to the DC output port A1 through the DC combining network 3. The right side of the nth rectifier surface unit 2 in each row... The rectifier surface unit 2 has two symmetrical open lines 24, and its right side is connected to the DC output port A2 through the DC combining network 3. The two DC output ports A1 and A2 are soldered together by wires to form the total DC output port. Each rectifier surface unit 2 includes one energy receiving unit 21, four first microstrip lines 221, two second microstrip lines 222, four Schottky diodes 23, four open lines 24, and four grounding pads 25. The energy receiving unit 21 is located at the center of the rectifier surface unit 2. The four first microstrip lines 221 are located at the left and right ends of the energy receiving unit 21, respectively. Symmetrical to the left and right, and top and bottom, of the energy receiving unit 21, and offset vertically from the horizontal center line of the energy receiving unit 21, one end is connected to the energy receiving unit 21, and the other end is connected to the anode of the Schottky diode 23; the four Schottky diodes 23 are symmetrical about the center of the energy receiving unit 21, with their anodes connected to the end of the first microstrip line 221 away from the energy receiving unit 21, and their cathodes connected to the grounding pad 25; the four grounding pads 25 are rectangular, arranged horizontally, and symmetrical about the left and right, and top and bottom, of the energy receiving unit 21, with each grounding pad 25 containing four diodes of similar size and shape. The grounding vias 251 are equidistantly arranged horizontally; two second microstrip lines 222 are located on the left and right sides of the energy receiving unit 21, symmetrical about the energy receiving unit 21, one end of which is connected to the center of the vertical side of the energy receiving unit 21, and the other end is connected to the open line 24; four open lines 24 are rectangular, all the same size and shape, arranged vertically, symmetrical about the energy receiving unit 21, two open lines 24 are located on the leftmost side of the rectifier surface unit 2, and the other two are located on the rightmost side, and the two open lines 24 at the top and bottom are connected to the second microstrip lines 222.

[0016] To further illustrate the feasibility of the above technical solution, a specific design example is given below: a highly integrated multi-diode structure high-efficiency rectifier surface. The dielectric substrate used is an F4B substrate with a thickness of 0.8mm and a relative permittivity of 2.6. The Schottky diodes are BAT15-03W. The rectifier surface has 6 rows and 5 columns of rectifier surface units, and the DC output is in parallel. The DC output terminal of the rectifier surface is connected to a 16.67-ohm load. When a uniform planar electromagnetic wave of 5.8GHz irradiates the rectifier surface, the absorption efficiency of the rectifier surface for the electromagnetic wave is as follows: Figure 4 As shown, the absorption efficiency of the rectifier surface can reach a maximum of 99.7% at 5.8 GHz, and remains above 50% in the 5.5 GHz-6.0 GHz range. Simulation graphs of the rectification efficiency and output DC voltage of a single unit are shown below. Figure 5 As shown, a single unit can generate 5.66mW of DC power with a 7.08mW RF input power, so the rectifier surface can generate 169.86mW of DC output power, and its total DC output voltage is 3.6V.

Claims

1. A highly integrated multi-diode structure for efficient rectification surface, characterized in that: The lower surface of the dielectric substrate (1) is completely covered by a metal layer, which is ground (4). The upper surface contains m rows and n columns of rectifier surface units (2) of the same size and shape, where m and n are positive integers greater than or equal to 2. The rectifier surface units (2) in adjacent rows are arranged in a staggered manner. The adjacent units of the n rectifier surface units (2) in each row are connected left and right, sharing two vertically symmetrical open lines (24). The left side of the first rectifier surface unit (2) in each row occupies two vertically symmetrical open lines (24), and its left side is connected to the DC output port A1 through the DC synthesis network (3). The right side of the nth rectifier surface unit (2) in each row occupies two vertically symmetrical open lines (24). The open circuit (24) is connected to the DC output port A2 via a DC combining network (3) on its right. The two DC output ports A1 and A2 are soldered together by wires to form the total DC output port. Each rectifier surface unit (2) includes one energy receiving unit (21), four first microstrip lines (221), two second microstrip lines (222), four Schottky diodes (23), four open circuits (24), and four grounding pads (25). The energy receiving unit (21) is located at the center of the rectifier surface unit (2). The four first microstrip lines (221) are located at the left and right ends of the energy receiving unit (21), respectively. The element (21) is symmetrical about the left and right and top and bottom, and is offset from the horizontal center line of the energy receiving unit (21) in the vertical direction. One end is connected to the energy receiving unit (21), and the other end is connected to the anode of the Schottky diode (23). The four Schottky diodes (23) are symmetrical about the center of the energy receiving unit (21) about the left and right and top and bottom. The anode is connected to the end of the first microstrip line (221) away from the energy receiving unit (21), and the cathode is connected to the grounding pad (25). The four grounding pads (25) are rectangular, arranged horizontally, and symmetrical about the energy receiving unit (21) about the left and right and top and bottom. Each grounding pad (25) contains four grounding pads of the same size and shape. Through-holes (251) and grounding through-holes (251) are arranged horizontally at equal intervals; two second microstrip lines (222) are located on the left and right sides of the energy receiving unit (21), symmetrical about the energy receiving unit (21), one end is connected to the center of the vertical side of the energy receiving unit (21), and the other end is connected to the open line (24); four open lines (24) are rectangular, the same size and shape, arranged vertically, symmetrical about the energy receiving unit (21) both left and right and up and down, two open lines (24) are located on the leftmost side of the rectifier surface unit (2), and the other two are located on the rightmost side, and the two open lines (24) are connected to the second microstrip lines (222).

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