A forward radiating heterogeneous integrated package antenna
By using a heterogeneous integrated packaged antenna structure with forward radiation, combined with a multilayer dielectric substrate and an MMIC chip, the problems of high-performance antenna design and miniaturized system packaging in the millimeter wave and terahertz bands are solved. This results in a smaller chip footprint, higher antenna performance, and lower processing difficulty, while also reducing path loss and improving system heat dissipation.
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Patents(China)
- Current Assignee / Owner
- Filing Date
- 2023-01-04
- Publication Date
- 2026-04-07
AI Technical Summary
Existing technologies struggle to achieve high-performance antenna design and miniaturized system packaging in millimeter-wave and terahertz frequency bands, and are difficult to manufacture, especially since on-chip antennas and packaged antenna solutions each have their shortcomings.
A novel antenna structure with forward radiation heterogeneous integrated packaging is designed, comprising a dielectric substrate, a metal shielding layer, a metal patch, a metallized via enclosure, an MMIC chip, and an on-chip antenna. By combining a multilayer dielectric substrate and an MMIC chip, a novel antenna structure is designed.
It achieves a smaller chip footprint, higher antenna performance, easier manufacturing and lower path loss, while ensuring manufacturing consistency in large-scale production and improving system heat dissipation.
Smart Images

Figure CN116053759B_ABST
Abstract
Description
Technical Field
[0001] This invention belongs to the field of packaged antennas, and in particular relates to heterogeneous integrated packaged antennas in the millimeter wave and terahertz frequency bands. Background Technology
[0002] Antennas are one of the most fundamental components of radio frequency (RF) systems. With increasing frequencies, antenna design faces a series of challenges. Achieving high-performance antenna radiation within a smaller footprint has become a relentless pursuit for RF engineers. Antenna-on-chip (AoC) and antenna-in-package (AiP) are two mainstream solutions. The former designs the antenna directly on the RF chip, improving the integration of the RF system but sacrificing antenna performance. The latter designs a high-performance antenna off-chip, connecting it to the chip through secondary processes such as bonding or flip-chip bonding, introducing additional losses and increasing the fabrication difficulty of the RF system. Neither of these mainstream solutions can perfectly address all aspects of antenna performance, miniaturization, and fabrication complexity. Summary of the Invention
[0003] Technical problem: In view of the shortcomings of the prior art, the present invention discloses a heterogeneous integrated packaged antenna with forward radiation, which realizes high-performance antenna design and miniaturized packaging of system in millimeter wave and terahertz frequency bands.
[0004] Technical solution: A heterogeneous integrated packaged antenna with forward radiation according to the present invention includes a dielectric substrate, a metal shielding layer, a metal patch, a metallized via enclosure, an MMIC chip, and an on-chip antenna;
[0005] The dielectric substrate consists of three layers, stacked sequentially. The first dielectric substrate is thinned around the edges and has a rectangular dielectric block protruding upward in the center. The second dielectric substrate has a rectangular ring etched at the bottom and a rectangular dielectric block protruding downward in the center. The third dielectric substrate has an air cavity etched in the center, while retaining the dielectric substrate.
[0006] The metal shielding layers are attached to the surface of the dielectric substrate. The first metal shielding layer is attached to the top surface of the first dielectric substrate, the second metal shielding layer is located between the first and second dielectric substrates, the third metal shielding layer is located between the second and third dielectric substrates, the fourth metal shielding layer is attached to the bottom surface of the third dielectric substrate, the fifth metal shielding layer is attached to the top surface of the rectangular ring of the second dielectric substrate, the sixth metal shielding layer is attached to the outer side of the rectangular ring of the second dielectric substrate, the seventh metal shielding layer is attached to the side of the air cavity of the third dielectric substrate, and the eighth metal shielding layer is attached to the bottom surface of the air cavity of the third dielectric substrate.
[0007] The metal patch is rectangular in shape, located between the first dielectric substrate and the second dielectric substrate, and situated at the center.
[0008] The metallized through-hole fence is connected end to end and has an overall rectangular shape. From top to bottom, it passes through the first metal shielding layer, the first dielectric substrate, the second metal shielding layer, the second dielectric substrate, and the fifth metal shielding layer.
[0009] The MMIC chip is placed inside the air cavity of the third dielectric substrate;
[0010] The on-chip antenna is designed on the MMIC chip and is located in the center.
[0011] The first dielectric substrate has an upward-protruding rectangular dielectric block in the middle without an attached metal shielding layer.
[0012] The second dielectric substrate has a rectangular dielectric block protruding downwards in the middle without an attached metal shielding layer.
[0013] The first metal shielding layer has a rectangular coupling window at its center.
[0014] The second metal shielding layer has a rectangular coupling window at its center.
[0015] The fifth metal shielding layer has a rectangular coupling window at its center.
[0016] The type of on-chip antenna is selected from patch antennas, monopole antennas, dipole antennas, or slot antennas.
[0017] The on-chip antenna described herein is fed by either single-ended feeding or differential feeding.
[0018] The present invention provides a millimeter-wave and terahertz band antenna composed of a heterogeneous integrated packaged antenna with forward radiation, wherein the millimeter-wave and terahertz band antenna comprises two or more of the aforementioned heterogeneous integrated packaged antennas with forward radiation.
[0019] Beneficial effects: This invention combines the advantages of both AoC and AiP antenna design schemes, achieving high-performance antenna design and miniaturized system packaging with relatively low manufacturing difficulty. Furthermore, this invention ensures consistent manufacturing processes during mass production. Specifically:
[0020] (1) Smaller chip footprint: The on-chip footprint of this invention is only half that of traditional on-chip antennas.
[0021] (2) Higher antenna performance: This invention has higher radiation efficiency and gain;
[0022] (3) Less difficult processing: This invention does not require secondary processes such as bonding or flipping, and can ensure processing consistency;
[0023] (4) Lower path loss: This invention eliminates the need for off-chip RF traces, significantly reducing path loss;
[0024] (5) Better system heat dissipation: The present invention heterogeneously integrates an MMIC chip and a multilayer dielectric substrate. The entire dielectric substrate under the MMIC chip can be flexibly equipped with heat dissipation holes to achieve system heat dissipation. Attached Figure Description
[0025] Fig. 1 This is a cross-sectional view of a heterogeneous integrated packaged antenna that radiates in the forward direction, as described in an embodiment of the present invention.
[0026] Fig. 2 This is a stack-up diagram of the dielectric substrate in an embodiment of the present invention;
[0027] Fig. 3 This is a layer stack diagram of the metal shielding layer in an embodiment of the present invention;
[0028] Fig. 4 This is a top view of the on-chip antenna in an embodiment of the present invention;
[0029] Fig. 5 This refers to the gain of the heterogeneous integrated packaged antenna that radiates forward in an embodiment of the present invention.
[0030] Fig. 6 The radiation efficiency of the heterogeneous integrated packaged antenna with forward radiation in the embodiments of the present invention;
[0031] The diagram shows: 11-First dielectric substrate, 12-Second dielectric substrate, 13-Third dielectric substrate, 21-First metal shielding layer, 22-Second metal shielding layer, 23-Third metal shielding layer, 24-Fourth metal shielding layer, 25-Fifth metal shielding layer, 26-Sixth metal shielding layer, 27-Seventh metal shielding layer, 28-Eighth metal shielding layer, 3-Metal patch, 4-Metalized via enclosure, 5-MMIC chip, and 6-On-chip antenna. Detailed Implementation
[0032] The present invention will be further described below with reference to the embodiments and accompanying drawings.
[0033] Example
[0034] like Figs. 1-4 As shown, this embodiment designs a forward-radiating heterogeneous integrated packaged antenna that combines MMIC chip technology and multilayer dielectric substrate technology. It operates in the D-band and consists of a dielectric substrate, a metal shielding layer, a metal patch 3, a metallized via enclosure 4, an MMIC chip 5, and an on-chip antenna 6.
[0035] The dielectric material of the substrate is silicon, and it is finely processed using micro-electro-mechanical systems (MEMS). There are three dielectric substrates, each 250µm thick, stacked sequentially. The first dielectric substrate 11 is thinned around its edges and has a convex rectangular dielectric block on top to suppress surface waves and improve the antenna's radiation efficiency. The second dielectric substrate 12 has a rectangular ring etched at the bottom and a convex rectangular dielectric block on the bottom to suppress surface waves and improve the antenna's receiving efficiency. The third dielectric substrate 13 has an air cavity etched in its center, retaining the dielectric substrate, for placing the MMIC chip 5. The depth of the etched cavity is approximately consistent with the height of the MMIC chip 5 to reduce the difficulty of loading DC bonding wires.
[0036] Metal shielding layers are attached to the surface of the dielectric substrate to confine electromagnetic energy and allow signals to be transmitted along a planned path. A first metal shielding layer 21 is attached to the top surface of the first dielectric substrate 11; a second metal shielding layer 22 is located between the first dielectric substrate 11 and the second dielectric substrate 12; a third metal shielding layer 23 is located between the second dielectric substrate 12 and the third dielectric substrate 13; a fourth metal shielding layer 24 is attached to the bottom surface of the third dielectric substrate 13; a fifth metal shielding layer 25 is attached to the bottom surface of the rectangular ring of the second dielectric substrate 12; a sixth metal shielding layer 26 is attached to the outer side of the rectangular ring of the second dielectric substrate 12; a seventh metal shielding layer 27 is attached to the side of the air cavity of the third dielectric substrate 13; and an eighth metal shielding layer 28 is attached to the bottom surface of the air cavity of the third dielectric substrate 13.
[0037] The metal patch 3 is rectangular in shape and is located between the first dielectric substrate 11 and the second dielectric substrate 12, in the center position, to regulate the transmission mode in the dielectric substrate;
[0038] The metallized through-hole fence 4 is connected end to end to form a rectangular electromagnetic shielding fence for guiding signal transmission. The metallized through-hole fence passes through the first metal shielding layer 21, the first dielectric substrate 11, the second metal shielding layer 22, the second dielectric substrate 12 and the fifth metal shielding layer 25 from top to bottom.
[0039] The MMIC chip 5 is based on the CMOS 40nm process node, and its substrate is thinned from 300um to 100um to facilitate placement in the air cavity of the third dielectric substrate 13.
[0040] The on-chip antenna 6 is designed based on the aluminum layer of the MMIC chip, with the underlying metal layer of the MMIC chip being hollowed out to improve the antenna's radiation efficiency. When the on-chip antenna 6 is working, the antenna energy is first transferred to the second dielectric substrate 12 through the air. The lower convex dielectric block of the second dielectric substrate 12 can receive most of the antenna energy in the air. Subsequently, this part of the energy passes sequentially through the rectangular coupling window of the fifth metal shielding layer 25, the rectangular coupling window of the second metal shielding layer 22 and the mode matching structure composed of the metal patch 3, and the rectangular coupling window of the first metal shielding layer 21, and finally reaches the upper convex rectangular dielectric block of the first dielectric substrate 11, where it is radiated into the air.
[0041] In this embodiment, the on-chip antenna 6 is a patch antenna (or: monopole antenna, dipole antenna, or slot antenna), which excites two linearly polarized waves by two different feeding methods. When single-ended fed, the vertically polarized wave is excited; when differentially fed, the horizontally polarized wave is excited. The two linearly polarized waves are orthogonal and can operate in a same-frequency duplex system. At the port feed, a carefully designed groove ensures 50Ω port matching.
[0042] Fig. 5 and Fig. 6 The gain and radiation efficiency of this embodiment are shown in the simulation. When single-ended fed, the antenna achieves a maximum radiation efficiency of 33% and a maximum gain of 3.08 dBi; when differentially fed, the antenna achieves a maximum radiation efficiency of 52.1% and a maximum gain of 4.95 dBi.
[0043] The above description is only a preferred embodiment of the present invention. It should be noted that for those skilled in the art, several improvements and modifications can be made without departing from the principle of the present invention, and these improvements and modifications should also be considered within the scope of protection of the present invention.
Claims
1. A heterogeneous integrated packaged antenna with forward radiation, characterized in that, It includes a dielectric substrate, a metal shielding layer, a metal patch (3), a metallized via fence (4), an MMIC chip (5), and an on-chip antenna (6). The dielectric substrate consists of three layers, stacked sequentially. The first dielectric substrate (11) is thinned around the perimeter and has a rectangular dielectric block protruding upward in the middle. The second dielectric substrate (12) has a rectangular ring etched at the bottom and a rectangular dielectric block protruding downward in the middle. The third dielectric substrate (13) has an air cavity etched in the center, while retaining the dielectric substrate. The metal shielding layers are attached to the surface of the dielectric substrate. The first metal shielding layer (21) is attached to the top surface of the first dielectric substrate (11), the second metal shielding layer (22) is between the first dielectric substrate (11) and the second dielectric substrate (12), the third metal shielding layer (23) is between the second dielectric substrate (12) and the third dielectric substrate (13), the fourth metal shielding layer (24) is attached to the bottom surface of the third dielectric substrate (13), the fifth metal shielding layer (25) is attached to the top surface of the rectangular ring of the second dielectric substrate (12), the sixth metal shielding layer (26) is attached to the outer side of the rectangular ring of the second dielectric substrate (12), the seventh metal shielding layer (27) is attached to the side of the air cavity of the third dielectric substrate (13), and the eighth metal shielding layer (28) is attached to the bottom surface of the air cavity of the third dielectric substrate (13). The metal patch (3) is rectangular in shape, located between the first dielectric substrate (11) and the second dielectric substrate (12), and situated at the center. The metallized through-hole fence (4) is connected end to end and is rectangular in shape. It passes through the first metal shielding layer (21), the first dielectric substrate (11), the second metal shielding layer (22), the second dielectric substrate (12) and the fifth metal shielding layer (25) from top to bottom. The MMIC chip (5) is placed in the air cavity of the third dielectric substrate (13); The on-chip antenna (6) is designed on the MMIC chip (5) and is located in the center. The first metal shielding layer (21) has a rectangular coupling window at its center; The second metal shielding layer (22) has a rectangular coupling window at its center; The fifth metal shielding layer (25) has a rectangular coupling window at its center.
2. The heterogeneous integrated packaged antenna with forward radiation according to claim 1, characterized in that, The first dielectric substrate (11) has a rectangular dielectric block protruding upward in the middle without an attached metal shielding layer.
3. The heterogeneous integrated packaged antenna with forward radiation according to claim 1, characterized in that, The second dielectric substrate (12) has a rectangular dielectric block protruding downward in the middle without an attached metal shielding layer.
4. A heterogeneous integrated packaged antenna with forward radiation according to claim 1, characterized in that, The type of on-chip antenna (6) is selected from patch antenna, monopole antenna, dipole antenna or slot antenna.
5. A heterogeneous integrated packaged antenna with forward radiation according to claim 4, characterized in that, The on-chip antenna (6) is fed by either single-ended feeding or differential feeding.
Citation Information
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