A single-layer broadband dual-polarization patch antenna and device for millimeter wave applications

Abstract

The present invention discloses a single-layer broadband dual-polarized patch antenna and device for millimeter wave applications, wherein the antenna comprises: a dielectric substrate, a first metal surface, a second metal surface, an annular gap, a substrate integrated waveguide cavity, a substrate integrated rectangular waveguide, a trimmed square metal patch, four third metallized through holes and four coplanar waveguide transmission lines; wherein the third metallized through holes, the trimmed square metal patch and the coplanar waveguide transmission lines constitute a feeding input structure. Based on a traditional microstrip fed patch antenna, the present invention realizes a broadband dual-polarized millimeter wave patch antenna by adjusting its radiation unit and feeding structure. In addition, the antenna can be easily prepared on a single-layer substrate using traditional PCB technology, and therefore has potential application prospects in millimeter wave wireless communication systems. The present invention can be widely used in the field of mobile communication antennas.

Description

Technical Field

[0001] The present invention relates to the field of mobile communication antennas, and in particular to a single-layer broadband dual-polarization patch antenna and a device for millimeter wave applications. Background Art

[0002] In recent years, millimeter wave communication technology has attracted more and more attention due to its advantages such as rich spectrum resources, high data rate and low latency. In order to make full use of millimeter wave spectrum resources to achieve high data transmission rate, the communication system must have sufficient bandwidth to ensure system capacity and smooth link, so the development of broadband antennas is an inevitable result. On the other hand, end users or base stations usually need dual-polarization antennas to solve multipath fading problems and enhance channel capacity. Therefore, the design of broadband dual-polarization millimeter wave antennas has aroused widespread interest.

[0003] Microstrip patch antennas have the advantages of small size, easy integration, and simple processing, and have good application prospects in wireless communication systems. However, the operating bandwidth of traditional dual-polarized patch antennas is narrow. Scholars have been exploring ways to improve the broadband performance of antennas, and therefore have developed a large number of broadband dual-polarized patch antennas. For example, in the article "Wideband dual-polarized four-folded-dipole antenna array with stable radiation pattern for base-station applications", the authors used folded dipoles to achieve an impedance bandwidth of 64.7%, but due to the limitations of millimeter-wave processing technology, it is difficult to design at millimeter-wave frequencies. In the millimeter-wave band, scholars use U-shaped coupling slots, parasitic elements, aperture-coupled stripline feeding structures, etched orthogonal cross slots, and other measures to extend the impedance bandwidth. Recently, in the article "Broadband 120GHz L-probe differential feed dual-polarized patchantenna with soft surface", the authors proposed a dual-polarized patch antenna based on grounded coplanar waveguide (GCPW) and L-probe differential feeding, which achieved an operating bandwidth of 28.3%. However, the design structure of six-layer PCB stacking is complex and difficult to handle.

[0004] In general, although various antennas have been proposed as described above, the impedance bandwidth and 3 dB gain bandwidth of known dual-polarization millimeter wave patch antennas are still relatively narrow. Summary of the invention

[0005] In order to solve at least one of the technical problems existing in the prior art to a certain extent, the object of the present invention is to provide a single-layer broadband dual-polarization patch antenna and a device for millimeter wave applications.

[0006] The technical solution adopted by the present invention is:

[0007] A single-layer broadband dual-polarized patch antenna for millimeter wave applications, comprising:

[0008] Dielectric substrate S;

[0009] A first metal surface M1, disposed on a first surface of the dielectric substrate;

[0010] A second metal surface M2, disposed on the second surface of the dielectric substrate;

[0011] An annular gap S2 is provided on the first metal surface, dividing the first metal surface into an outer ring part and an inner ring part;

[0012] The substrate integrated waveguide cavity C comprises a plurality of first metallized through holes, wherein the plurality of first metallized through holes are arranged on the outer portion of the ring and form a through hole ring;

[0013] The substrate integrated rectangular waveguide W comprises a plurality of second metallized through holes, wherein the positions of the plurality of second metallized through holes are arranged outside the through hole ring;

[0014] A trimmed square metal patch P1, comprising four parts, is disposed on the inner portion of the ring, and the center of the trimmed square metal patch coincides with the center of the annular gap;

[0015] Four third metallized through holes V1 are arranged in the trimmed square metal patch, and the four third metallized through holes are respectively arranged on four parts of the trimmed square metal patch;

[0016] Four coplanar waveguide transmission lines T are arranged on the second metal surface, and the four coplanar waveguide transmission lines are respectively connected to four third metallized through holes;

[0017] The third metallized through hole V1, the trimmed square metal patch P1 and the coplanar waveguide transmission line T constitute a feeding input structure.

[0018] Furthermore, a cross-shaped slot S3 is further provided on the second metal surface, the center of the cross-shaped slot coincides with the center of the second metal surface, and the four coplanar waveguide transmission lines T are respectively provided on the four arms of the cross-shaped slot;

[0019] Taking the center of the cross-shaped gap as the origin, the two symmetry axes of the cross-shaped gap are the X axis and the Y axis, and the center of the third metallized through hole V1 is set on the X axis or the Y axis;

[0020] The dual-polarization patch radiation structure is fed by two sets of coplanar waveguide transmission lines T located on the positive half axes of the X-axis and the Y-axis, and directly feeds signals with two polarization directions of 0° and 90° orthogonal to each other to achieve dual polarization.

[0021] Furthermore, a notch is provided in the middle of each side of the through-hole ring, and the position of the notch corresponds to the position of the substrate-integrated rectangular waveguide W;

[0022] The coplanar waveguide transmission line T and the substrate integrated waveguide cavity C along the negative direction of the X-axis and the Y-axis are structurally symmetrical to improve the antenna radiation pattern.

[0023] Furthermore, the second metallized through hole on the substrate integrated rectangular waveguide W is designed to extend along the X-axis and the Y-axis; the size of the first metallized through hole and the second metallized through hole and the distance between the through holes determine the electromagnetic wave leakage and matching problems.

[0024] Further, the single-layer broadband dual-polarized patch antenna also includes four cut-edge rectangular metal parasitic patches P2;

[0025] The four trimmed rectangular metal parasitic patches are arranged between the trimmed square metal patch and the annular gap, and the positions of the four trimmed rectangular metal parasitic patches respectively correspond to the four sides of the trimmed square metal patch;

[0026] In SMD TM 02 and TM 21 On the basis of two radiation modes, two new resonance points are introduced by utilizing the coplanar waveguide transmission line feeding structure and the parasitic patch P2. The four resonance points work together to produce good broadband performance.

[0027] Furthermore, the straight line where the center of the trimmed rectangular metal parasitic patch P2 and the center of the trimmed square metal patch P1 are located is parallel to the X-axis or the Y-axis.

[0028] Furthermore, the single-layer broadband dual-polarized patch antenna further includes an X-shaped slot S1;

[0029] The X-shaped gap S1 is arranged in the trimmed square metal patch and distributed along the diagonal of the trimmed square metal patch. The center of the X-shaped gap coincides with the center of the trimmed square metal patch, and the trimmed square metal patch is divided into four parts.

[0030] The reflection and transmission characteristics of electromagnetic waves on the dielectric substrate are changed by the X-shaped gap to improve the electromagnetic wave energy radiation on the back of the antenna, thereby reducing the back lobe level of the antenna.

[0031] Furthermore, the materials of the first metal surface M1, the trimmed square metal patch P1, the surface of the metal through hole, the second metal surface M2 and the coplanar waveguide transmission line T are all 0.018 mm thick metal copper.

[0032] Furthermore, the dielectric substrate is Rogers 5880 high-frequency plate material, and the thickness of the dielectric substrate is 0.787 mm.

[0033] Another technical solution adopted by the present invention is:

[0034] A communication device comprises the above-mentioned single-layer broadband dual-polarization patch antenna for millimeter wave applications.

[0035] The beneficial effects of the present invention are as follows: Based on the traditional microstrip fed patch antenna, the present invention realizes a broadband dual-polarized millimeter wave patch antenna by adjusting its radiation unit and feeding structure. For two orthogonal polarizations, the antenna of the present invention shows an impedance bandwidth of 49.4% and a 3-dB gain bandwidth of 50%, and within this frequency band, the port isolation is generally higher than 16dB. In addition, the antenna can be easily prepared on a single-layer substrate using traditional PCB technology, so it has potential application prospects in millimeter wave wireless communication systems. BRIEF DESCRIPTION OF THE DRAWINGS

[0036] In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the embodiments of the present invention or the drawings of related technical solutions in the prior art are introduced below. It should be understood that the drawings introduced below are only for the convenience of clearly describing some embodiments of the technical solutions of the present invention. For those skilled in the art, other drawings can be obtained based on these drawings without creative work.

[0037] Figure 1 3D schematic diagram of a single-layer broadband dual-polarized patch antenna for millimeter wave applications in an embodiment of the present invention;

[0038] Figure 2 is a top view of the first metal surface in an embodiment of the present invention;

[0039] Figure 3 is a top view of the second metal surface in an embodiment of the present invention;

[0040] Figure 4 is a simulation result diagram of an S parameter curve of a single-layer broadband dual-polarized patch antenna in an embodiment of the present invention;

[0041] Figure 5 is a simulation result diagram of a gain curve of a single-layer broadband dual-polarized patch antenna in an embodiment of the present invention;

[0042] FIG6 is a radiation pattern of the first input port at each resonance point in an embodiment of the present invention; Figures 6(a) to 6(c) The radiation patterns at 26 GHz, 32 GHz and 38 GHz respectively. DETAILED DESCRIPTION

[0043] The embodiments of the present invention are described in detail below, and examples of the embodiments are shown in the accompanying drawings, wherein the same or similar reference numerals throughout represent the same or similar elements or elements having the same or similar functions. The embodiments described below with reference to the accompanying drawings are exemplary and are only used to explain the present invention, and are not to be construed as limitations of the present invention. For the step numbers in the following embodiments, they are only provided for the convenience of explanation, and the order between the steps is not limited in any way, and the execution order of each step in the embodiment can be adaptively adjusted according to the understanding of those skilled in the art.

[0044] In the description of the present invention, it should be understood that descriptions involving orientations, such as up, down, front, back, left, right, etc., and orientations or positional relationships indicated are based on the orientations or positional relationships shown in the accompanying drawings, and are only for the convenience of describing the present invention and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and therefore should not be understood as a limitation on the present invention.

[0045] In the description of the present invention, "several" means one or more, "more" means more than two, "greater than", "less than", "exceed" etc. are understood as not including the number itself, and "above", "below", "within" etc. are understood as including the number itself. If there is a description of "first" or "second", it is only used for the purpose of distinguishing the technical features, and cannot be understood as indicating or implying the relative importance or implicitly indicating the number of the indicated technical features or implicitly indicating the order of the indicated technical features.

[0046] In the description of the present invention, unless otherwise clearly defined, terms such as setting, installing, connecting, etc. should be understood in a broad sense, and technicians in the relevant technical field can reasonably determine the specific meanings of the above terms in the present invention based on the specific content of the technical solution.

[0047] Based on the problems of the prior art, the present invention proposes a single-layer, low-profile, broadband, dual-polarized patch antenna operating in the millimeter wave band. The antenna is evolved from a traditional microstrip fed patch antenna, which has two resonant modes in the passband. By replacing the microstrip feed line with an improved coplanar waveguide feed line structure, and further integrating the coplanar parasitic patch and substrate waveguide back cavity structure, two additional resonances are excited. It is worth mentioning that the impedance bandwidth and 3-dB gain bandwidth of the present invention are considerable in broadband dual-polarized millimeter wave patches. In addition, the simple structure of a single-layer low profile is also a significant advantage of this antenna.

[0048] like Figure 1 As shown, a single-layer broadband dual-polarized patch antenna for millimeter wave applications includes a dielectric substrate and two metal surfaces. The upper metal surface (i.e., the first metal surface) covers the upper surface of the dielectric substrate S, and a hollow square area is opened in the center of the upper metal surface M1. A cut-edge square metal patch P1 is provided in the hollow square area, and four cut-edge rectangular metal parasitic patches P2 are provided around the cut-edge square metal patch P1. An annular gap S2 is left between the cut-edge metal patch P1 and the upper metal surface. The cut-edge square metal patch P1 is a square structure with an axisymmetric X-shaped gap S1 etched in the center; preferably, the X-shaped gap S1 coincides with the center of the cut-edge square metal patch P1. Preferably, the X-shaped gap S1 coincides with the diagonal of the cut-edge square metal patch P1. Preferably, the straight line where the center of the cut-edge rectangular metal parasitic patch P2 and the center of the cut-edge square metal patch P1 are located is parallel to the X-axis or the Y-axis. Preferably, the trimmed rectangular metal parasitic patch P2 is axisymmetric. Preferably, the upper metal surface M1 is the same size as the dielectric substrate. Preferably, the dielectric substrate S is square.

[0049] The dielectric substrate S is provided with two rows of periodically distributed first metallized through hole arrays on each of its four sides, and the metallized through hole arrays are arranged perpendicular to the dielectric substrate S side. The substrate integrated rectangular waveguide W is formed by the first metallized through hole array, the dielectric substrate S, and the upper and lower metal layers. Preferably, the substrate integrated rectangular waveguide W is symmetrical about the X-axis and the Y-axis. A notched square cavity C surrounded by second metallized through holes is etched in the dielectric substrate S, that is, a substrate integrated waveguide cavity C, and the notched square cavity C has four notches on its four sides, and the notches are connected to the substrate integrated rectangular waveguide W. Preferably, the center of the notched square cavity C coincides with the center of the dielectric substrate S. All of the above metallized through holes are connected to the upper and lower metal surfaces. Four third metallized through holes V1 are etched in the center of the dielectric substrate S, and a feeding input structure is formed by the third metallized through holes V1, the upper surface cut-edge square metal patch P1, and the lower surface coplanar waveguide transmission line T. Preferably, the center of the third metallized through hole V1 is on the X-axis or the Y-axis.

[0050] It should be noted that Figure 1 The substrate-integrated rectangular waveguide W includes only one group of metallized through holes (two second metallized through holes in each group), but is not limited to one group of metallized through holes. Multiple groups can be added according to actual needs, and the multiple groups of metallized through holes are arranged in sequence along the directions of the X-axis and the Y-axis; for example, after increasing the side length of the dielectric substrate S, multiple groups of metallized through holes can be added.

[0051] The lower metal surface (i.e., the second metal surface) M2 covers the lower surface of the dielectric substrate S. The lower metal surface M2 is etched with a coplanar waveguide transmission line T. The lower metal surface M2 is etched with a "cross" type gap S2 on the X-axis and the Y-axis. The above-mentioned coplanar waveguide transmission line T is two groups of first microstrip lines T1 and second microstrip lines T2 placed orthogonally to each other, located on the X-axis and the Y-axis, and the intersection is located at the center point of the dielectric substrate S. Preferably, the structural dimensions of the first microstrip line T1 and the second microstrip line T2 are the same. Preferably, the two gaps of the "cross" type gap S2 have the center point of the dielectric substrate S as the intersection point, and are located at the 0° and 90° directions of the intersection point respectively, and the gap structure is symmetrical about the center point of the dielectric substrate S and the X-axis and Y-axis with the center point of the dielectric substrate S as the origin.

[0052] The dual-polarization patch radiation structure is fed by two groups of coplanar waveguide transmission lines T located on the positive half axes of the X-axis and the Y-axis, and directly feeds signals with two polarization directions of 0° and 90° orthogonal to each other.

[0053] The above antenna structure is explained in detail below with reference to the accompanying drawings and specific embodiments.

[0054] like Figure 1 As shown, this embodiment provides a single-layer broadband dual-polarization millimeter wave patch antenna, including a Rogers5880 dielectric substrate S with a thickness of 0.787 mm and an upper metal surface M1 and a lower metal surface M2 with the same size as the dielectric substrate.

[0055] A substrate integrated waveguide cavity C with a side length of 13.8 mm and surrounded by metallized through holes is etched in the dielectric substrate S. The diameter of the metallized through hole is 1.4 mm, and the hole center distance between two adjacent metallized through holes is 2.3 mm. The substrate integrated waveguide cavity C is symmetrical about the center of the dielectric substrate. The width of the substrate integrated waveguide rectangle W is 4.6 mm, which is connected to the four-side notches of the substrate integrated waveguide cavity C and extends to the edge of the dielectric substrate. The substrate integrated rectangular waveguide W is perpendicular to a set of sides of the dielectric substrate S, and the substrate integrated waveguide cavity C coincides with the center of the dielectric substrate S. Four metallized through holes with a diameter of 0.6 mm are etched in the center of the dielectric substrate.

[0056] Depend on Figure 2As shown, a square annular gap S2 with a gap of 11.3 mm is engraved in the center of the upper metal surface M1. The inner center of the gap is a square patch P1 etched with an X-shaped gap S1. The side length of the square patch P1 is 6 mm. The X-shaped gap S1 is a rectangular gap with a length of 7.3 mm and a width of 1.1 mm intersecting along the diagonal of the square patch. The X-shaped gap S1, the square patch P1 and the center of the dielectric substrate S coincide. Four rectangular parasitic patches P2 are arranged around the square patch P1, with a length of 5 mm and a width of 1.4 mm, and a distance of 0.2 mm from the edge of the square patch P1. The rectangular parasitic patches P2 are parallel to the sides of the square patch P1 and are symmetrical with the X-axis and Y-axis with the center point of the dielectric substrate as the origin.

[0057] Depend on Figure 3 As shown, a coplanar waveguide transmission line T is engraved from the edge of the lower metal surface M2 and extends into the substrate integrated waveguide cavity C. The coplanar waveguide transmission line T is composed of a rectangular microstrip line with a length of 8.9 mm and a width of 0.7 mm extending from the center points of the four sides of the lower metal surface M2. The lower metal surface M2 is etched with a "cross" type gap S3 on the X-axis and Y-axis with the center point of the dielectric substrate as the origin. The "cross" type gap S3 is two groups of gaps with a width of 2.8 mm that are placed orthogonally to each other and penetrate the lower metal surface M2. The "cross" type gap S3 is symmetrical about the center point of the dielectric substrate and the X-axis and Y-axis with the center point of the dielectric substrate as the origin.

[0058] The specific structural geometric parameters are shown in Table 1 below:

[0059] Table 1

[0060] Parameter H G <![CDATA[G1]]> <![CDATA[X p ]]> <![CDATA[X1]]> <![CDATA[Y1]]> <![CDATA[X2]]> <![CDATA[Y2]]> Value(mm) 0.787 20.6 11.3 6 5 1.4 7.3 1.1 Parameter <![CDATA[D1]]> <![CDATA[D2]]> <![CDATA[L1]]> <![CDATA[L2]]> <![CDATA[L3]]> <![CDATA[W1]]> <![CDATA[W2]]> Value(mm) 0.6 1.4 8.9 2.3 13.8 0.7 1.05

[0061] In order to further illustrate the good performance of a single-layer broadband dual-polarized millimeter wave patch antenna of the present invention, the electromagnetic simulation software HFSS is used to model and simulate this embodiment. Figure 4 Figure 6 shows the simulation results of the single-layer broadband dual-polarized millimeter-wave patch antenna. Generally speaking, the lower the profile and the higher the dielectric constant of the medium, the more difficult it is to widen the bandwidth.

[0062] like Figure 4 As shown, the S parameter simulation result diagram of this embodiment is given. When the dielectric constant of the dual-polarized antenna is 2.2 and the cross-sectional thickness is only 0.08λ0 (λ0 is the wavelength of the corresponding frequency), the bandwidth of the antenna return loss is less than -10dB is 23.9GHz-39.6GHz, the relative working frequency bandwidth is greater than 49.4%, and four resonant frequency points are generated at 25GHz, 29.5GHz, 33GHz and 38GHz. These four resonant points work together to produce good broadband performance. At the same time, the isolation in this frequency band is greater than 16dB.

[0063] like Figure 5 As shown, a gain simulation result diagram of this embodiment is given. The maximum gain of the dual-polarized antenna is 9.2dBi, and the 3-dB gain bandwidth is 23.7GHz-39.7GHz (50%).

[0064] As shown in Figure 6, the radiation pattern of this embodiment at each resonant point is given, where Figure 6(a), Figure 6(b), and Figure 6(c) are radiation analysis diagrams of the first input port at 26 GHz, 32 GHz, and 38 GHz, respectively. It is observed that there is low cross polarization and low radiation side lobe in the entire passband, and the radiation performance is good. Among them, X-pol is cross polarization and Co-pol is main polarization.

[0065] In summary, the antenna of the present invention has at least the following advantages and beneficial effects compared to the prior art:

[0066] (1) The antenna of the present invention is composed of a square driving patch, four coplanar parasitic rectangular patches and a substrate integrated waveguide back cavity structure. It is fed by a pair of orthogonal coplanar waveguide feed lines, produces dual-polarized radiation, and excites a total of four resonances, thereby obtaining a better working bandwidth.

[0067] (2) In order to optimize the radiation pattern and antenna gain, the present invention modifies the asymmetric coplanar waveguide feeder structure into a symmetrical structure by mirror replication, and etches a "cross"-shaped slot on the square patch.

[0068] (3) The antenna proposed by the present invention has a simple structure, using only a single-layer dielectric substrate and a single substrate integrated waveguide back cavity structure, which is very simple to process and has a low manufacturing cost. In addition, while having a simple structure, the antenna also has good radiation characteristics, and its impedance bandwidth and 3dB gain bandwidth are both very good.

[0069] This embodiment also provides a communication device, including: Figure 1 A single-layer broadband dual-polarized patch antenna for millimeter-wave applications is shown.

[0070] The communication device of this embodiment can be a device with wireless communication function such as a mobile smart terminal, a tablet computer, a smart bracelet, a smart watch, a notebook, a smart home, etc. The communication device of this embodiment includes the above-mentioned single-layer broadband dual-polarized patch antenna, and thus has the functions and beneficial effects described in the above-mentioned embodiments.

[0071] In the above description of this specification, the description with reference to the terms "one embodiment / example", "another embodiment / example" or "certain embodiments / examples" etc. means that the specific features, structures, materials or characteristics described in conjunction with the embodiment or example are included in at least one embodiment or example of the present invention. In this specification, the schematic representation of the above terms does not necessarily refer to the same embodiment or example. Moreover, the specific features, structures, materials or characteristics described may be combined in any one or more embodiments or examples in a suitable manner.

[0072] Although embodiments of the present invention have been shown and described, it will be appreciated by those skilled in the art that various changes, modifications, substitutions and variations may be made to the embodiments without departing from the principles and spirit of the present invention, and that the scope of the present invention is defined by the claims and their equivalents.

[0073] The above is a specific description of the preferred implementation of the present invention, but the present invention is not limited to the above embodiments. Those skilled in the art may make various equivalent modifications or substitutions without violating the spirit of the present invention. These equivalent modifications or substitutions are all included in the scope defined by the claims of this application.

Claims

1. A single-layer broadband dual-polarized patch antenna for millimeter wave applications, characterized in that: include: dielectric substrate; A first metal surface is disposed on a first surface of the dielectric substrate; A second metal surface is disposed on the second surface of the dielectric substrate; An annular gap is provided on the first metal surface, dividing the first metal surface into an outer ring portion and an inner ring portion; A substrate integrated waveguide cavity comprises a plurality of first metallized through holes, wherein the plurality of first metallized through holes are arranged on the outer portion of the ring and form a through hole ring; A substrate integrated rectangular waveguide comprises a plurality of second metallized through holes, wherein the plurality of second metallized through holes are arranged outside the through hole ring; A trimmed square metal patch, comprising four parts, is disposed on the inner portion of the ring, and the center of the trimmed square metal patch coincides with the center of the annular gap; Four third metallized through holes are arranged in the trimmed square metal patch, and the four third metallized through holes are respectively arranged on four parts of the trimmed square metal patch; Four coplanar waveguide transmission lines are arranged on the second metal surface, and the four coplanar waveguide transmission lines are respectively connected to four third metallized through holes; Wherein, the third metallized through hole, the trimmed square metal patch and the coplanar waveguide transmission line constitute a feeding input structure.

2. The single-layer broadband dual-polarized patch antenna for millimeter wave applications according to claim 1, characterized in that: A cross-shaped slot is also provided on the second metal surface, the center of the cross-shaped slot coincides with the center of the second metal surface, and the four coplanar waveguide transmission lines are respectively arranged on the four arms of the cross-shaped slot; the center of the cross-shaped slot is taken as the origin, the two symmetry axes of the cross-shaped slot are the X axis and the Y axis, and the center of the third metallized through hole is arranged on the X axis or the Y axis; The dual-polarization patch radiation structure is fed by two sets of coplanar waveguide transmission lines located on the positive half axes of the X-axis and the Y-axis, and directly feeds signals with two polarization directions of 0° and 90° orthogonal to each other to achieve dual polarization.

3. The single-layer broadband dual-polarized patch antenna for millimeter wave applications according to claim 2, characterized in that: A notch is provided in the middle of each side of the through-hole ring, and the position of the notch corresponds to the position of the substrate integrated rectangular waveguide; The coplanar waveguide transmission line and substrate integrated waveguide cavity along the negative direction of the X-axis and the Y-axis are structurally symmetrical to improve the antenna radiation pattern.

4. The single-layer broadband dual-polarized patch antenna for millimeter wave applications according to claim 2, characterized in that: The second metallized through hole on the substrate integrated rectangular waveguide is designed to extend along the X-axis and the Y-axis; the size of the first metallized through hole and the second metallized through hole and the distance between the through holes determine the electromagnetic wave leakage and matching problems.

5. The single-layer broadband dual-polarized patch antenna for millimeter wave applications according to claim 1, characterized in that: The single-layer broadband dual-polarized patch antenna also includes four cut-edge rectangular metal parasitic patches; The four trimmed rectangular metal parasitic patches are arranged between the trimmed square metal patch and the annular gap, and the positions of the four trimmed rectangular metal parasitic patches respectively correspond to the four sides of the trimmed square metal patch; In SMD TM 02 and TM 21 On the basis of two radiation modes, two new resonance points are introduced by utilizing the coplanar waveguide transmission line feeding structure and the parasitic patch. The four resonance points work together to produce good broadband performance.

6. The single-layer broadband dual-polarized patch antenna for millimeter wave applications according to claim 5, characterized in that: The straight line where the center of the trimmed rectangular metal parasitic patch and the center of the trimmed square metal patch are located is parallel to the X-axis or the Y-axis.

7. The single-layer broadband dual-polarized patch antenna for millimeter wave applications according to claim 1, characterized in that: The single-layer broadband dual-polarized patch antenna also includes an X-shaped slot; The X-shaped gap is arranged in the trimmed square metal patch and distributed along the diagonal of the trimmed square metal patch. The center of the X-shaped gap coincides with the center of the trimmed square metal patch, and the trimmed square metal patch is divided into four parts. The reflection and transmission characteristics of electromagnetic waves on the dielectric substrate are changed by the X-shaped gap to improve the electromagnetic wave energy radiation on the back of the antenna, thereby reducing the back lobe level of the antenna.

8. The single-layer broadband dual-polarization patch antenna for millimeter wave applications according to claim 1, characterized in that: The first metal surface, the trimmed square metal patch, the surface of the metal through hole, the second metal surface and the coplanar waveguide transmission line are all made of copper.

9. The single-layer broadband dual-polarized patch antenna for millimeter wave applications according to claim 1, characterized in that: The dielectric substrate is Rogers 5880 high-frequency plate, and the thickness of the dielectric substrate is 0.787 mm.

10. A communication device, characterized in that: It comprises a single-layer broadband dual-polarization patch antenna for millimeter wave applications as described in any one of claims 1-9.

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