Lumped parameter topology for implementing third order generalized chebyshev bandpass frequency response

Abstract

The application provides a lumped parameter topology for realizing generalized Chebyshev band-pass frequency response by using lumped parameter elements, which specifically includes two types of structures, GCL and GCB. The generalized Chebyshev band-pass frequency response includes two types of double-side generalized Chebyshev band-pass frequency response and single-side generalized Chebyshev band-pass frequency response. The response is characterized in that the response amplitude in the passband is equal ripple fluctuation, has three transmission poles, and two transmission zeros can be flexibly placed at limited frequencies, which are any positive frequencies except zero frequency and infinite frequency. The GCL structure is used for realizing double-side generalized Chebyshev band-pass frequency response, and the GCB structure is used for realizing single-side generalized Chebyshev band-pass frequency response. The application effectively overcomes the limitations of the prior art, and realizes more complex frequency response by flexibly setting transmission zeros.

Description

Technical Field

[0001] This invention belongs to the field of communication technology, specifically relating to a lumped parameter topology for realizing a third-order generalized Chebyshev bandpass frequency response. Background Technology

[0002] Spectrum resources are always finite, and the continuous emergence of wireless application technologies is putting increasing pressure on spectrum allocation. Filters, as crucial components in spectrum allocation, function to allow signals at certain frequencies to pass smoothly while significantly suppressing signals at other frequencies; their performance has a significant impact on the overall system performance. Filter specifications include passband bandwidth, insertion loss, passband ripple, return loss, stopband rejection, in-band phase linearity, and group delay. Due to the limited frequency resources, more and more application frequency bands are very close together, requiring filters to achieve more complex frequency responses to meet increasingly demanding technical requirements. Theoretically, a filter's frequency response should ideally have low insertion loss in the passband and flexible placement of transmission zeros in the stopband to improve frequency selectivity or out-of-band rejection, thus achieving a complex frequency response. While elliptic function filtering has transmission zeros located at finite frequencies, these cannot be flexibly moved. The characteristics of generalized Chebyshev filtering frequency response are: the frequency response amplitude in the passband exhibits uniform ripple; theoretically, the transmission zeros in the stopband can be flexibly placed at finite frequencies, and so on. However, existing technologies struggle to achieve a generalized Chebyshev filter frequency response where the transmission zero can be flexibly placed. Summary of the Invention

[0003] Existing technologies, based on the low-pass prototype concept, have limitations and cannot easily achieve a generalized Chebyshev bandpass frequency response with flexible placement of transmission zeros using lumped-parameter topologies. The purpose of this invention is to overcome these limitations and provide a lumped-parameter topology for realizing a third-order generalized Chebyshev bandpass frequency response. This response has three transmission poles; the response amplitude within the passband exhibits uniform ripple; and two transmission zeros can be flexibly placed at finite frequencies outside the passband.

[0004] Note that for the accompanying drawings, the component numbers in each drawing are used to distinguish the connection relationships of the components in that drawing.

[0005] like Figure 1 The diagram shows the lumped-parameter topology described in this invention, used to realize a third-order generalized Chebyshev bandpass frequency response. Its key feature is: an admittance inverter J... 12 Resonator R2 and admittance inverter J 23 Cascaded sequentially to form the upper branch two-port network; resonator R1, admittance inverter J 13The resonator R3 is cascaded in sequence to form the lower branch two-port network; the upper branch two-port network and the lower branch two-port network are connected in parallel to form the middle two-port network; the source terminal is connected to the admittance inverter J. S The left port of the admittance inverter J S The right port of the cascaded network is connected to the left port of the middle two-port network; the right port of the middle two-port network is connected to the admittance inverter J. L The left port is cascaded, admittance inverter J L The right port is connected to the load; the admittance of the source is Gs, and the admittance of the load is G. L .

[0006] Furthermore, the lumped-parameter topology described in this invention uses three types of lumped-parameter elements: capacitive elements, inductive elements, and conductive elements. The admittance of a capacitive element is expressed as jωC, where j is the imaginary unit, ω is the angular frequency, and C is the capacitance value, referred to as capacitance C. Inductive elements have two implementation methods: the first type of inductive element has an admittance expressed as... The admittance of a first-order inductive element is frequency-dependent, where L is the inductance value, and is called inductance L. The admittance of a second-order inductive element is denoted as jB, where B is a frequency-independent inductance, and is called inductance jB. The admittance of a conductive element is denoted as G, which is frequency-independent and is a purely real number; it is called conductance G.

[0007] Furthermore, the resonator used in this invention is composed of a capacitive element and an inductive element connected in parallel, and has two types of implementations: the first type of resonator is composed of a capacitor C and an inductor L connected in parallel, called a CL resonator, such as... Figure 2 As shown; the second type of resonator consists of a capacitor C and an inductor jB connected in parallel, and is called a CB resonator, such as... Figure 3 As shown.

[0008] Furthermore, admittance inverter J S and admittance inverter J L Composed of conductive elements, its topology is as follows: Figure 4 As shown, this is called a G-admittance inverter. Its characteristics are: conductance G1 forms a first parallel admittance two-port network, conductance G2 forms a series impedance two-port network, and conductance G3 forms a second parallel admittance two-port network; the first parallel admittance two-port network, the series impedance two-port network, and the second parallel admittance two-port network are then cascaded sequentially to form the G-admittance inverter; the conductance values ​​of conductances G1, G2, and G3 are subject to a constraint relationship: G2 = -G1 = -G3.

[0009] Furthermore, admittance inverter J 12 Admittance Inverter J 13 and admittance inverter J 23Composed of capacitive and inductive components, it has two implementation types. The first type of admittance inverter is as follows: Figure 5 As shown, capacitor C1 and inductor L1 are connected in parallel to form the first parallel admittance two-port network; capacitor C2 and inductor L2 are connected in parallel to form the series impedance two-port network; capacitor C3 and inductor L3 are connected in parallel to form the second parallel admittance two-port network; the first parallel admittance two-port network, the series impedance two-port network, and the second parallel admittance two-port network are cascaded in sequence. This type of admittance inverter is called a CL admittance inverter. There are constraints between the component values ​​in the CL admittance inverter: C2 = -C1 = -C3 and L2 = -L1 = -L3. If all capacitors C and inductors L are retained in the CL admittance inverter, it can also be called a hybrid-coupled CL admittance inverter; if all inductors L in the CL admittance inverter are open-circuited, and only capacitors C are retained, it is called an electrically coupled C admittance inverter; if all capacitors C in the hybrid-coupled CL admittance inverter are open-circuited, and only inductors L are retained, it is called a magnetically coupled L admittance inverter. The second type of admittance inverter is as follows: Figure 6 As shown, capacitor C1 and inductor jB1 are connected in parallel to form a first parallel admittance two-port network; capacitor C2 and inductor jB2 are connected in parallel to form a series impedance two-port network; capacitor C3 and inductor jB3 are connected in parallel to form a second parallel admittance two-port network; the first parallel admittance two-port network, the series impedance two-port network, and the second parallel admittance two-port network are then cascaded in sequence. This type of admittance inverter is called a CB admittance inverter. There are constraint relationships between the component values ​​in the CB admittance inverter: C2 = -C1 = -C3 and B2 = -B1 = -B3. If all capacitors C and inductors jB are retained in the CB admittance inverter, it can also be called a hybrid-coupled CB admittance inverter; if all inductors jB in the CB admittance inverter are open-circuited, and only capacitors C are retained, it is called an electrically coupled C admittance inverter; if all capacitors C in the CB admittance inverter are open-circuited, and only inductors jB are retained, it is called a magnetically coupled jB admittance inverter.

[0010] Furthermore, by adjusting the component values ​​of the lumped parameter topology, the admittance inverter J can be retained or removed as needed. S and admittance inverter J L .

[0011] The third-order generalized Chebyshev bandpass frequency response described in this invention is divided into two categories. The first type of response is characterized by: the response amplitude being symmetrical about zero frequency; the response amplitude within the passband exhibiting uniform ripples and having three transmission poles; and its two transmission zeros being flexibly placed at finite frequencies, where finite frequencies refer to any positive frequency other than zero and infinity. This type of response is called a two-sided generalized Chebyshev bandpass frequency response. The second type of response is characterized by: the response amplitude forming a passband only within the positive frequency range; the response amplitude within the passband exhibiting uniform ripples and having three transmission poles; and its two transmission zeros being flexibly placed at finite frequencies. This type of response is called a one-sided generalized Chebyshev bandpass frequency response.

[0012] Figure 1 The lumped parameter topology shown has two specific implementation structures, referred to as GCL structure and GCB structure respectively: GCL structure is used to realize the bilateral generalized Chebyshev bandpass frequency response; GCB structure is used to realize the unilateral generalized Chebyshev bandpass frequency response.

[0013] GCL structure as follows Figure 7 As shown, the resonator is a CL resonator, and the admittance inverter J... S and admittance inverter J L For G admittance inverter, admittance inverter J 12 Admittance Inverter J 13 and admittance inverter J 23 This is a CL admittance inverter. Its characteristic is that the admittance inverter J... 12 A CL resonator composed of capacitor C2 and inductor L2 connected in parallel, and an admittance inverter J. 23 Cascaded sequentially to form the upper branch two-port network; capacitor C1 and inductor L1 connected in parallel form the CL resonator and the admittance inverter J. 13 A CL resonator, consisting of capacitor C3 and inductor L3 connected in parallel, is cascaded to form the lower branch two-port network; the upper branch two-port network and the lower branch two-port network are connected in parallel to form the middle two-port network; the source terminal is connected to the admittance inverter J. S The left port of the admittance inverter J S The right port of the cascaded network is connected to the left port of the middle two-port network; the right port of the middle two-port network is connected to the admittance inverter J. L The left port is cascaded, admittance inverter J L The right port is connected to the load; the admittance of the source is Gs, and the admittance of the load is G. L .

[0014] Furthermore, the network matrix [A] of the GCL structure is represented as follows:

[0015]

[0016] Network matrix and scattering parameter S 21 and S 11 The relationship between them is

[0017]

[0018]

[0019] Where N represents the number of transmission poles.

[0020] Furthermore, by adjusting the component parameters, the admittance inverter J in the GCL structure can be selected to be retained or removed. S or admittance inverter J L .

[0021] Furthermore, the GCL structure is used to realize a two-sided generalized Chebyshev bandpass frequency response. Figure 8 The paper presents three typical third-order bilateral generalized Chebyshev bandpass frequency responses: response A, response B, and response C. To demonstrate the superiority of the lumped-parameter topology described in this invention, these three responses are intentionally set to have the same passband, but each has a transmission zero located at a different finite frequency. This fully illustrates that the lumped-parameter topology described in this invention can realize a third-order bilateral generalized Chebyshev bandpass frequency response, and the two transmission zeros can be flexibly placed to achieve complex frequency responses.

[0022] Furthermore, response A has one transmission zero at a finite frequency on the left side of the passband and one transmission zero at a finite frequency on the right side of the passband. The GCL structure used to implement response A is characterized by: admittance inverter J 12 and admittance inverter J 23 For a hybrid coupled CL admittance inverter, admittance inverter J 13 This is an electrically coupled C-admittance inverter. In this GCL structure, after absorbing the negative component values, the simplified circuit structure is as follows: Figure 9 As shown, the feature is that: capacitor C 12 With inductor L 12 The capacitor C2 and inductor L2 are connected in parallel to form the first series impedance two-port network; the capacitor C2 and inductor L2 are connected in parallel to form the first parallel admittance two-port network; capacitor C 23 With inductor L 23 The first series impedance two-port network, the first parallel admittance two-port network, and the second series impedance two-port network are cascaded in sequence to form the upper branch two-port network; capacitor C1 and inductor L1 are connected in parallel to form the second parallel admittance two-port network; capacitor C 13The third series impedance two-port network is formed; capacitor C3 and inductor L3 are connected in parallel to form the third parallel admittance two-port network; the second parallel admittance two-port network, the third series impedance two-port network and the third parallel admittance two-port network are cascaded in sequence to form the lower branch two-port network; the upper branch two-port network and the lower branch two-port network are connected in parallel to form the total two-port network, the left port is then connected to the source terminal, and the right port is then connected to the load terminal.

[0023] Furthermore, both transmission zeros of response B are located at finite frequencies to the left of the passband. The GCL structure used to implement response B is characterized by: admittance inverter J 12 and admittance inverter J 23 For electrically coupled C-admittance inverters, admittance inverters J 13 This is a hybrid-coupled CL admittance inverter. In this GCL structure, after absorbing the negative component values, the simplified circuit structure is as follows: Figure 10 As shown, the feature is that: capacitor C 12 This forms the first series impedance two-port network; capacitor C2 and inductor L2 are connected in parallel to form the first parallel admittance two-port network; capacitor C 23 This forms a second series impedance two-port network; the first series impedance two-port network, the first parallel admittance two-port network, and the second series impedance two-port network are cascaded in sequence to form the upper branch two-port network; capacitor C1 and inductor L1 are connected in parallel to form the second parallel admittance two-port network; capacitor C 13 With inductor L 13 The second parallel two-port network is formed by connecting capacitor C3 and inductor L3 in parallel to form the third parallel admittance two-port network. The second parallel admittance two-port network, the third series impedance two-port network, and the third parallel admittance two-port network are cascaded in sequence to form the lower branch two-port network. The upper branch two-port network and the lower branch two-port network are connected in parallel to form the total two-port network. The left port is then connected to the source terminal, and the right port is then connected to the load terminal.

[0024] Furthermore, both transmission zeros of the response C are located at finite frequencies on the right side of the passband. The GCL structure used to implement the response C is characterized by: an admittance inverter J... 12 and admittance inverter J 23 For magnetically coupled L-admittance inverters, admittance inverters J 13 This is a hybrid-coupled CL admittance inverter. In this GCL structure, after absorbing the negative component values, the simplified circuit structure is as follows: Figure 11 As shown, the feature is: inductor L 12 The first series impedance two-port network is formed; capacitor C2 and inductor L2 are connected in parallel to form the first parallel admittance two-port network; inductor L 23This forms a second series impedance two-port network; the first series impedance two-port network, the first parallel admittance two-port network, and the second series impedance two-port network are cascaded in sequence to form the upper branch two-port network; capacitor C1 and inductor L1 are connected in parallel to form the second parallel admittance two-port network; capacitor C 13 With inductor L 13 The second parallel two-port network is formed by connecting capacitor C3 and inductor L3 in parallel to form the third parallel admittance two-port network. The second parallel admittance two-port network, the third series impedance two-port network, and the third parallel admittance two-port network are cascaded in sequence to form the lower branch two-port network. The upper branch two-port network and the lower branch two-port network are connected in parallel to form the total two-port network. The left port is then connected to the source terminal, and the right port is then connected to the load terminal.

[0025] GCB structure as follows Figure 12 As shown, the resonator is a CB resonator, and the admittance inverter J... S and admittance inverter J L For G admittance inverter, admittance inverter J 12 Admittance Inverter J 13 and admittance inverter J 23 This is a CB admittance inverter. Its characteristic is that the admittance inverter J... 12 A CB resonator composed of capacitor C2 and inductor JB2 connected in parallel, and an admittance inverter J. 23 Cascaded sequentially to form the upper branch two-port network; capacitor C1 and inductor jB1 connected in parallel form a CB resonator and an admittance inverter J. 13 A CB resonator, consisting of capacitor C3 and inductor JB3 connected in parallel, is cascaded to form the lower branch two-port network; the upper branch two-port network and the lower branch two-port network are connected in parallel to form the middle two-port network; the source terminal is connected to the admittance inverter J. S The left port of the admittance inverter J S The right port of the cascaded network is connected to the left port of the middle two-port network; the right port of the middle two-port network is connected to the admittance inverter J. L The left port is cascaded, admittance inverter J L The right port is connected to the load; the admittance of the source is Gs, and the admittance of the load is G. L .

[0026] Furthermore, the network matrix [A] of the GCB structure is represented as follows:

[0027]

[0028] Furthermore, by adjusting the component parameters, the admittance inverter J in the GCB structure can be selected to be retained or removed. Sor admittance inverter J L .

[0029] Furthermore, the GCB structure is used to realize a one-sided generalized Chebyshev bandpass frequency response. Figure 13 The paper presents three typical third-order one-sided generalized Chebyshev bandpass frequency responses: response D, response E, and response F. To demonstrate the superiority of the lumped-parameter topology described in this invention, these three responses are intentionally set to have the same passband, but each has a transmission zero located at a different finite frequency. This fully illustrates that the lumped-parameter topology described in this invention can realize a third-order two-sided generalized Chebyshev bandpass frequency response, and the two transmission zeros can be flexibly placed to achieve complex frequency responses.

[0030] Furthermore, the response D has one transmission zero at a finite frequency on the left side of the passband and one transmission zero at a finite frequency on the right side of the passband. The GCB structure used to implement the response D is characterized by: an admittance inverter J... 12 and admittance inverter J 23 For a hybrid coupled CB admittance inverter, admittance inverter J 13 It is an electrically coupled C-admittance inverter.

[0031] Furthermore, both transmission zeros of the response E are located at finite frequencies to the left of the passband. The GCB structure used to implement the response E is characterized by: an admittance inverter J... 12 and admittance inverter J 23 For electrically coupled C-admittance inverters, admittance inverters J 13 It is a hybrid coupled CB admittance inverter.

[0032] Furthermore, both transmission zeros of the response F are located at finite frequencies on the right side of the passband. The GCB structure used to implement the response F is characterized by: an admittance inverter J... 12 and admittance inverter J 23 For magnetically coupled jB admittance inverter, admittance inverter J 13 It is a hybrid coupled CB admittance inverter.

[0033] The beneficial effects of the lumped parameter topology described in this invention are: it can realize a third-order Chebyshev bandpass frequency response; it can flexibly place two transmission zeros at finite frequencies; it can be used as a basic building block of high-order filters; it overcomes the shortcomings of current lumped parameter circuits in realizing complex frequency responses, and has significant technological advancements. Attached Figure Description

[0034] Figure 1 : A schematic diagram of the lumped parameter topology described in this invention;

[0035] Figure 2 Schematic diagram of a CL resonator;

[0036] Figure 3 Schematic diagram of a CB resonator;

[0037] Figure 4 Schematic diagram of G admittance inverter;

[0038] Figure 5 : Schematic diagram of CL admittance inverter;

[0039] Figure 6 Schematic diagram of CB admittance inverter;

[0040] Figure 7 : Schematic diagram of GCL structure;

[0041] Figure 8 A general schematic diagram of responses A, B, and C;

[0042] Figure 9 A simplified circuit diagram for implementing response A;

[0043] Figure 10 A simplified circuit diagram for implementing response B;

[0044] Figure 11 A simplified circuit diagram for implementing response C;

[0045] Figure 12 : Schematic diagram of GCB structure;

[0046] Figure 13 : A general schematic diagram of responses to D, E, and F;

[0047] Figure 14 : Response A diagram used in the embodiment;

[0048] Figure 15 : Response B diagram used in the embodiment;

[0049] Figure 16 : Response C diagram used in the embodiment;

[0050] Figure 17 : Response D diagram used in the embodiment;

[0051] Figure 18 : Schematic diagram of response E used in the embodiment;

[0052] Figure 19 : Schematic diagram of response F used in the embodiment. Detailed Implementation

[0053] To demonstrate the inventiveness and novelty of this invention, it will be described below in conjunction with the accompanying drawings and specific embodiments, but the implementation of this invention is not limited thereto.

[0054] To fully illustrate the significant technical advancements of this invention, the passband is set to be the same in all the following embodiments. For example, the passband covers a frequency range of [2,3] GHz; the return loss within the passband is -20 dB. Different embodiments have flexible and controllable transmission zeros for achieving complex frequency responses.

[0055] Example 1 uses a GCL structure to implement response A. The parameter values ​​in the GCL structure are: G S =0.02S, G L =0.02S, J S =0.02S, J L =0.02S, C1=2.9246pF, L1=1.1095nH, C2=7.0133pF, L2=0.6000nH, C3=3.5834pF, L3=1.5239nH, J 12 =-0.7350pF·ω+1 / (1.5001nH·ω), J 13 = -0.1620pF·ω, J 23 = -2.2714pF·ω + 1 / (9.5283nH·ω). Simulation results are as follows. Figure 14 As shown, one transmission zero is at 1.0 GHz, and the other is at 4.0 GHz. The GCL structure described in this invention offers great flexibility, allowing for adjustment of component parameters to achieve the same response. For response A, the GCL structure can also be implemented using another set of parameters, with values ​​of: G... S =0.02S, G L =0.01S, J S =0.02S, J L =0.01S, C1=2.9246pF, L1=1.1095nH, C2=7.0133pF, L2=0.6000nH, C3=1.7916pF, L3=3.0281nH, J 12 =-0.7350pF·ω+1 / (1.5001nH·ω), J 13 = -0.1145pF·ω, J 23 =-1.6061pF·ω+1 / (13.4760nH·ω).

[0056] Example 2 is using Figure 9 The simplified circuit in the diagram implements response A, with component parameters G. S =0.02S, G L=0.02S, C1=2.0276pF, L1=4.2617nH, C2=4.0069pF, L2=0.9725nH, C3=1.1500pF, L3=1.7999nH, C 12 =0.7350pF, L 12 =1.5001nH, C 13 =0.1620pF, C 23 =2.2714pF, L 23 = 9.5283nH. Simulation results are as follows: Figure 14 .

[0057] Example 3 uses a GCL structure to implement response B. The parameter values ​​in the GCL structure are: G S =0.02S, G L =0.02S, J S =0.02S, J L =0.02S, C1=2.9998pF, L1=1.5565nH, C2=5.2271pF, L2=1.0555nH, C3=2.9998pF, L3=1.5565nH, J 12 = -1.2915pF·ω, J 13 =-0.4809pF·ω+1 / (64.6120nH·ω), J 23 = -1.2915pF·ω. Simulation results are as follows: Figure 15 As shown, one transmission zero point is at 1.0 GHz, and the other transmission zero point is at 1.5 GHz.

[0058] Example 4 is using Figure 10 The simplified circuit in the diagram implements response B, with component parameters set to: G S =0.02S, G L =0.02S, C1=1.2275pF, L1=1.5949nH, C2=2.6441pF, L2=1.0555nH, C3=1.2275pF, L3=1.5949nH, C 12 =1.2915pF, C 13 =0.4809pF, L 13 =64.6135nH, C 23 =1.2915pF. Simulation results are as follows: Figure 15 .

[0059] Example 5 uses a GCL structure to implement response C. The parameter values ​​in the GCL structure are: G S =0.02S, G L =0.02S, J S =0.02S, JL =0.02S, C1=2.7068pF, L1=1.3835nH, C2=4.3949pF, L2=0.6809nH, C3=2.7068pF, L3=1.3835nH, J 12 = 1 / (3.8510nH·ω), J 13 =-0.3452pF·ω+1 / (3.7089nH·ω), J 23 = 1 / (3.8510nH·ω). Simulation results are as follows: Figure 16 As shown, one transmission zero point is at 3.5 GHz, and the other transmission zero point is at 4.0 GHz.

[0060] Example 6 is using Figure 11 The simplified circuit in the diagram implements the response C, with component parameters set to: G S =0.02S, G L =0.02S, C1=2.3616pF, L1=5.1680nH, C2=4.3949pF, L2=1.0533nH, C3=2.3616pF, L3=5.1680nH, L 12 =3.8510nH, C 13 =0.3452pF, L 13 =3.7089nH, L 23 = 3.8510 nH. Simulation results are as follows: Figure 16 .

[0061] Example 7 uses the GCB structure to implement response D. The parameter values ​​in the GCB structure are: G S =0.02S, G L =0.02S, J S =0.01S, J L =0.01S, C1=1.4587pF, B1=-0.0245S, C2=3.3100pF, B2=-0.0520S, C3=1.6767pF, B3=-0.0222S, J 12 = -0.3699pF·ω + 0.01312S, J 13 = -0.0783pF·ω, J 23 = -0.9265pF·ω + 0.0072S. The simulation results are as follows: Figure 17 As shown, one transmission zero point is at 1.0 GHz, and the other transmission zero point is at 4.0 GHz.

[0062] Example 8 uses the GCB structure to implement the response E. The parameter values ​​in the GCB structure are: G S =0.03S, G L =0.03S, JS =0.03S, J L =0.03S, C1=8.2404pF, B1=-0.1229S, C2=13.9820pF, B2=-0.1865S, C3=8.2404pF, B3=-0.1229S, J 12 = -1.7941pF·ω, J 13 = -1.2537pF·ω + 0.0066S, J 23 = -1.7941pF·ω. Simulation results are as follows: Figure 18 As shown, one transmission zero point is at 1.0 GHz, and the other transmission zero point is at 1.5 GHz.

[0063] Example 9 uses the GCB structure to implement the response F. The parameter values ​​in the GCB structure are: G S =0.02S, G L =0.02S, J S =0.02S, J L =0.02S, C1=5.3400pF, B1=-0.0838S, C2=9.1141pF, B2=-0.1648S, C3=5.3400pF, B3=-0.0838S, J 12 =0.0158S, J 13 = -0.9893pF·ω + 0.0287S, J 23 =0.0158S. Simulation results are as follows: Figure 19 As shown, one transmission zero point is at 3.5 GHz, and the other transmission zero point is at 4.0 GHz.

[0064] The embodiments listed above fully illustrate that the lumped parameter topology described in this invention can be used to realize a third-order generalized Chebyshev bandpass frequency response, and that two transmission zeros can be flexibly placed at finite frequencies, representing a significant technological advancement. Those skilled in the art will recognize that the embodiments described herein are intended to help the reader understand the principles of the invention and should be understood as not limiting the scope of protection of the invention to such specific statements and embodiments. Those skilled in the art can make various other specific modifications and combinations based on the technical teachings disclosed in this invention without departing from the essence of the invention, and these modifications and combinations are still within the scope of protection of this invention.

Claims

1. A lumped parameter topology, characterized by: Admittance inverter J 12 , resonator R2 and admittance inverter J 23 are cascaded in sequence to form an upper branch two-port network; resonator R1, admittance inverter J 13 and resonator R3 are cascaded in sequence to form a lower branch two-port network; the upper branch two-port network and the lower branch two-port network are connected in parallel to form an intermediate two-port network; a source end Source is connected to a left port of admittance inverter J S , a right port of admittance inverter J S is cascaded with a left port of the intermediate two-port network; a right port of the intermediate two-port network is cascaded with a left port of admittance inverter J L , and a right port of admittance inverter J L is connected to a load end Load; an admittance of the source end Source is Gs, and an admittance of the load end Load is G L ; by adjusting element parameters, admittance inverters J S or J L may be selected to be retained or removed; the lumped parameter topology is used to realize two types of third-order generalized Chebyshev bandpass frequency responses; a first type of response is referred to as a third-order double-sided generalized Chebyshev bandpass frequency response, the response amplitude of which is symmetric about zero frequency, the response amplitude in a passband is equal-ripple fluctuation, and the response has three transmission poles and two transmission zeros which can be flexibly placed at finite frequencies; a second type of response is referred to as a third-order single-sided generalized Chebyshev bandpass frequency response, the response amplitude of which forms a passband only in a positive frequency range, the response amplitude in the passband is equal-ripple fluctuation, and the response has three transmission poles and two transmission zeros which can be flexibly placed at finite frequencies.

2. The lumped-constant topology according to claim 1, for implementing a third-order double-sided generalized Chebyshev bandpass frequency response with one transmission zero at a finite frequency on the left side of the passband and one transmission zero at a finite frequency on the right side of the passband; the lumped-constant topology being embodied in a GCL structure, characterized by: Admittance inverter J 12 , CL resonator composed of capacitor C2 and inductor L2 in parallel, admittance inverter J 23 , CL resonator composed of capacitor C1 and inductor L1 in parallel, admittance inverter J 13 , CL resonator composed of capacitor C3 and inductor L3 in parallel, are cascaded in sequence to form a lower branch two-port network; the upper branch two-port network and the lower branch two-port network are connected in parallel to form an intermediate two-port network; the source end Source is connected to the left port of admittance inverter J S , the right port of admittance inverter J S is cascaded with the left port of the intermediate two-port network; the right port of the intermediate two-port network is cascaded with the left port of admittance inverter J L , the right port of admittance inverter J L is connected to the load end Load; the admittance of the source end Source is Gs, and the admittance of the load end Load is G L ; admittance inverter J S and admittance inverter J L are G admittance inverters, admittance inverter J 12 and admittance inverter J 23 are mixed coupling CL admittance inverters, and admittance inverter J 13 is an electric coupling C admittance inverter; by adjusting the element parameters, it can be selected to retain or remove admittance inverter J S or admittance inverter J L .

3. The lumped constant topology of claim 1 for implementing a third order double-sided generalized Chebyshev bandpass frequency response with one transmission zero at a finite frequency on the left side of the passband and one transmission zero at a finite frequency on the right side of the passband; the lumped constant topology being embodied in a simplified circuit structure, characterized by: Capacitor C 12 With inductor L 12 The capacitor C2 and inductor L2 are connected in parallel to form the first series impedance two-port network; the capacitor C2 and inductor L2 are connected in parallel to form the first parallel admittance two-port network; capacitor C 23 With inductor L 23 The first series impedance two-port network, the first parallel admittance two-port network, and the second series impedance two-port network are cascaded in sequence to form the upper branch two-port network; capacitor C1 and inductor L1 are connected in parallel to form the second parallel admittance two-port network; capacitor C 13 The third series impedance two-port network is formed; capacitor C3 and inductor L3 are connected in parallel to form the third parallel admittance two-port network; the second parallel admittance two-port network, the third series impedance two-port network and the third parallel admittance two-port network are cascaded in sequence to form the lower branch two-port network; the upper branch two-port network and the lower branch two-port network are connected in parallel to form the total two-port network, the left port is then connected to the source terminal, and the right port is then connected to the load terminal.

4. The lumped-constant topology according to claim 1, for implementing a third-order double-sided generalized Chebyshev bandpass frequency response with both transmission zeros located at finite frequencies on the left side of the passband; the lumped-constant topology being embodied as a GCL structure, characterized by: Admittance inverter J 12 , CL resonator composed of capacitor C2 and inductor L2 in parallel, admittance inverter J 23 , CL resonator composed of capacitor C1 and inductor L1 in parallel, admittance inverter J 13 , CL resonator composed of capacitor C3 and inductor L3 in parallel, are cascaded in sequence to form a lower branch two-port network; the upper branch two-port network and the lower branch two-port network are connected in parallel to form an intermediate two-port network; the source end Source is connected to the left port of admittance inverter J S , the right port of admittance inverter J S is cascaded with the left port of the intermediate two-port network; the right port of the intermediate two-port network is cascaded with the left port of admittance inverter J L , the right port of admittance inverter J L is connected to the load end Load; the admittance of the source end Source is Gs, and the admittance of the load end Load is G L ; admittance inverter J S and admittance inverter J L are G admittance inverters, admittance inverter J 12 and admittance inverter J 23 are electrically coupled C admittance inverters, and admittance inverter J 13 is a mixed coupled CL admittance inverter; by adjusting the element parameters, it can be selected to retain or remove admittance inverter J S or admittance inverter J L .

5. The lumped-element topology according to claim 1, for implementing a third-order double-sided generalized Chebyshev bandpass frequency response with both transmission zeros located at finite frequencies on the left side of the passband; the lumped-element topology being embodied in a simplified circuit structure, characterized by: Capacitor C 12 Capacitor C2 and inductor L2 form a first shunt admittance two-port network; capacitor C 23 Capacitor C1 and inductor L1 form a second shunt admittance two-port network; the first series impedance two-port network, the first shunt admittance two-port network and the second series impedance two-port network are cascaded in sequence to form an upper branch two-port network; capacitor C 13 Capacitor C2 and inductor L2 form a first shunt admittance two-port network; capacitor C 13 Capacitor C3 and inductor L3 form a third shunt admittance two-port network; the second shunt admittance two-port network, the third series impedance two-port network and the third shunt admittance two-port network are cascaded in sequence to form a lower branch two-port network; the upper branch two-port network and the lower branch two-port network are connected in parallel to form a total two-port network, and the left port is connected to the source end Source and the right port is connected to the load end Load.

6. The lumped-constant topology according to claim 1, for implementing a third-order double-sided generalized Chebyshev bandpass frequency response with both transmission zeros located at finite frequencies on the right side of the passband; the lumped-constant topology being embodied as a GCL structure, characterized by: Admittance inverter J 12 , CL resonator composed of capacitor C2 and inductor L2 in parallel, admittance inverter J 23 , CL resonator composed of capacitor C1 and inductor L1 in parallel, admittance inverter J 13 , CL resonator composed of capacitor C3 and inductor L3 in parallel, admittance inverter J S , CL resonator composed of capacitor C3 and inductor L3 in parallel, admittance inverter J S , CL resonator composed of capacitor C3 and inductor L3 in parallel, admittance inverter J L , CL resonator composed of capacitor C3 and inductor L3 in parallel, admittance inverter J L , CL resonator composed of capacitor C3 and inductor L3 in parallel, admittance inverter J L , CL resonator composed of capacitor C3 and inductor L3 in parallel, admittance inverter J S , CL resonator composed of capacitor C3 and inductor L3 in parallel, admittance inverter J L , CL resonator composed of capacitor C3 and inductor L3 in parallel, admittance inverter J 12 , CL resonator composed of capacitor C3 and inductor L3 in parallel, admittance inverter J 23 , CL resonator composed of capacitor C3 and inductor L3 in parallel, admittance inverter J 13 , CL resonator composed of capacitor C3 and inductor L3 in parallel, admittance inverter J S , CL resonator composed of capacitor C3 and inductor L3 in parallel, admittance inverter J L , CL resonator composed of capacitor C3 and inductor L3 in parallel, admittance inverter J 7. The lumped-element topology according to claim 1, for implementing a third-order double-sided generalized Chebyshev bandpass frequency response with both transmission zeros located at finite frequencies on the right side of the passband; the lumped-element topology being embodied in a simplified circuit structure, characterized by: inductor L 12 a first series impedance two-port network; a capacitor C2 and an inductor L2 in parallel to form a first parallel admittance two-port network; an inductor L 23 a second series impedance two-port network; the first series impedance two-port network, the first parallel admittance two-port network and the second series impedance two-port network are cascaded in sequence to form an upper branch two-port network; a capacitor C1 and an inductor L1 in parallel to form a second parallel admittance two-port network; a capacitor C 13 an inductor L 13 a third series impedance two-port network; a capacitor C3 and an inductor L3 in parallel to form a third parallel admittance two-port network; the second parallel admittance two-port network, the third series impedance two-port network and the third parallel admittance two-port network are cascaded in sequence to form a lower branch two-port network; the upper branch two-port network and the lower branch two-port network are in parallel to form a total two-port network, and a left port is connected to a source end Source and a right port is connected to a load end Load.

8. The lumped-element topology according to claim 1, for implementing a third-order single-side generalized Chebyshev bandpass frequency response with one transmission zero at a finite frequency on the left side of the passband and one transmission zero at a finite frequency on the right side of the passband; the lumped-element topology being embodied in a GCB configuration, characterized by: Admittance inverter J 12 , CB resonator composed of capacitor C2 and inductor jB2 in parallel, admittance inverter J 23 , CB resonator composed of capacitor C1 and inductor jB1 in parallel, admittance inverter J 13 , CB resonator composed of capacitor C3 and inductor jB3 in parallel, admittance inverter J S , CB resonator composed of capacitor C4 and inductor jB4 in parallel, admittance inverter J S , CB resonator composed of capacitor C5 and inductor jB5 in parallel, admittance inverter J L , CB resonator composed of capacitor C6 and inductor jB6 in parallel, admittance inverter J L , CB resonator composed of capacitor C7 and inductor jB7 in parallel, admittance inverter J L , CB resonator composed of capacitor C8 and inductor jB8 in parallel, admittance inverter J S , CB resonator composed of capacitor C9 and inductor jB9 in parallel, admittance inverter J L , CB resonator composed of capacitor C10 and inductor jB10 in parallel, admittance inverter J 12 , CB resonator composed of capacitor C11 and inductor jB11 in parallel, admittance inverter J 23 , CB resonator composed of capacitor C12 and inductor jB12 in parallel, admittance inverter J 13 , CB resonator composed of capacitor C13 and inductor jB13 in parallel, admittance inverter J S , CB resonator composed of capacitor C14 and inductor jB14 in parallel, admittance inverter J L , CB resonator composed of capacitor C15 and inductor jB15 in parallel, admittance inverter J 9. The lumped-element topology according to claim 1, for implementing a third-order single-side generalized Chebyshev bandpass frequency response with both transmission zeros located at finite frequencies on the left side of the passband; the lumped-element topology being embodied as a GCB structure, characterized by: Admittance inverter J 12 , CB resonator composed of capacitor C2 and inductor jB2 in parallel, admittance inverter J 23 , CB resonator composed of capacitor C1 and inductor jB1 in parallel, admittance inverter J 13 , CB resonator composed of capacitor C3 and inductor jB3 in parallel, admittance inverter J S , CB resonator composed of capacitor C1 and inductor jB1 in parallel, admittance inverter J S , CB resonator composed of capacitor C3 and inductor jB3 in parallel, admittance inverter J L , CB resonator composed of capacitor C1 and inductor jB1 in parallel, admittance inverter J L , CB resonator composed of capacitor C3 and inductor jB3 in parallel, admittance inverter J L , CB resonator composed of capacitor C1 and inductor jB1 in parallel, admittance inverter J S , CB resonator composed of capacitor C3 and inductor jB3 in parallel, admittance inverter J L , CB resonator composed of capacitor C1 and inductor jB1 in parallel, admittance inverter J 12 , CB resonator composed of capacitor C3 and inductor jB3 in parallel, admittance inverter J 23 , CB resonator composed of capacitor C1 and inductor jB1 in parallel, admittance inverter J 13 , CB resonator composed of capacitor C3 and inductor jB3 in parallel, admittance inverter J S , CB resonator composed of capacitor C1 and inductor jB1 in parallel, admittance inverter J L , CB resonator composed of capacitor C3 and inductor jB3 in parallel, admittance inverter J 10. The lumped-element topology according to claim 1, for implementing a third-order single-side generalized Chebyshev bandpass frequency response with both transmission zeros located at finite frequencies on the right side of the passband; the lumped-element topology being embodied as a GCB structure, characterized by: Impedance inverter J 12 , CB resonator composed of capacitor C2 and inductor jB2 in parallel, impedance inverter J 23 , CB resonator composed of capacitor C1 and inductor jB1 in parallel, impedance inverter J 13 , CB resonator composed of capacitor C3 and inductor jB3 in parallel, impedance inverter J S , CB resonator composed of capacitor C3 and inductor jB3 in parallel, impedance inverter J S , CB resonator composed of capacitor C3 and inductor jB3 in parallel, impedance inverter J L , CB resonator composed of capacitor C3 and inductor jB3 in parallel, impedance inverter J L , CB resonator composed of capacitor C3 and inductor jB3 in parallel, impedance inverter J L , CB resonator composed of capacitor C3 and inductor jB3 in parallel, impedance inverter J S , CB resonator composed of capacitor C3 and inductor jB3 in parallel, impedance inverter J L , CB resonator composed of capacitor C3 and inductor jB3 in parallel, impedance inverter J 12 , CB resonator composed of capacitor C3 and inductor jB3 in parallel, impedance inverter J 23 , CB resonator composed of capacitor C3 and inductor jB3 in parallel, impedance inverter J 13 , CB resonator composed of capacitor C3 and inductor jB3 in parallel, impedance inverter J S , CB resonator composed of capacitor C3 and inductor jB3 in parallel, impedance inverter J L .

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