Display panel, preparation method thereof and display device

Abstract

The application discloses a display panel, a preparation method thereof and a display device. The display panel comprises a light-transmitting area, a pixel area and a wiring area. The pixel area is located on one side of the light-transmitting area along a first direction, and the wiring area is located on one side of the light-transmitting area along a second direction. The width of the pixel area in the first direction is different from the width of the wiring area in the second direction. The display panel further comprises a substrate, a driving circuit layer located on one side of the substrate, a thin film transistor in the driving circuit layer and located in the pixel area, a first film layer at least partially located on one side of the driving circuit layer away from the substrate, a first opening in the light-transmitting area, a first part in the pixel area and a second part in the wiring area. In the direction perpendicular to the plane where the substrate is located, the thickness of the first part is H1, and the height difference between the surface of the first part away from the substrate and the surface of the second part away from the substrate is ΔH. Wherein, |ΔH| / H1≤5%.

Description

TECHNICAL FIELD

[0001] The present application relates to the technical field of display, in particular to a display panel, a preparation method thereof and a display device. BACKGROUND

[0002] With the development of display technology, the requirements for devices with display function are getting higher and higher, especially display panels with high resolution, low power consumption and high brightness have become the mainstream products of current display devices.

[0003] Among them, the display panel taking micro light emitting elements as display light emitting devices usually includes a driving circuit, and the micro light emitting elements need to be transferred by a mass transfer method and electrically connected with the driving circuit by bonding. However, the flatness of the existing display panel is poor, which makes the bonding effect of the micro light emitting elements poor during the mass transfer process of the micro light emitting elements. SUMMARY

[0004] The present application provides a display panel, a preparation method thereof and a display device to improve the flatness of the display panel and ensure the smooth progress of subsequent processes of the display panel.

[0005] According to an aspect of the present application, a display panel is provided, comprising:

[0006] a light transmission area, a pixel area and a wiring area, the pixel area is located on one side of the light transmission area along a first direction, the wiring area is located on one side of the light transmission area along a second direction, and the first direction and the second direction intersect; the width of the pixel area in the first direction is different from the width of the wiring area in the second direction;

[0007] a substrate;

[0008] a driving circuit layer located on one side of the substrate; the driving circuit layer includes a thin film transistor, and the thin film transistor is located in the pixel area;

[0009] a first film layer at least partially located on one side of the driving circuit layer away from the substrate; the first film layer includes a first opening located in the light transmission area, a first part located in the pixel area and a second part located in the wiring area; in a direction perpendicular to the plane where the substrate is located, the thickness of the first part is H1; the height difference between the surface on one side of the first part away from the substrate and the surface on one side of the second part away from the substrate is ΔH; wherein |ΔH| / H1≤5%.

[0010] According to another aspect of the present application, there is provided a manufacturing method of a display panel, the display panel comprising: a light-transmitting region, a pixel region and a wiring region, the pixel region being located at one side of the light-transmitting region along a first direction, the wiring region being located at one side of the light-transmitting region along a second direction, the first direction and the second direction intersecting; a width of the pixel region along the first direction being different from a width of the wiring region along the second direction;

[0011] The manufacturing method of the display panel comprises:

[0012] providing a substrate substrate;

[0013] forming a driving circuit layer at one side of the substrate substrate; the driving circuit layer comprising a thin film transistor; the thin film transistor being located at the pixel region;

[0014] forming a first film layer at a side of the driving circuit layer facing away from the substrate substrate; the first film layer comprising a first opening located at the light-transmitting region, a first part located at the pixel region and a second part located at the wiring region; along a direction perpendicular to a plane in which the substrate substrate is located, a thickness of the first part being H1; a height difference between a surface of the first part at the side facing away from the substrate substrate and a surface of the second part at the side facing away from the substrate substrate being ΔH; wherein |ΔH| / H1≤5%.

[0015] According to another aspect of the present application, there is provided a display device comprising the above-mentioned display panel.

[0016] The technical solution of the present application, by setting the pixel region at one side of the light-transmitting region along the first direction, and setting the driving circuit layer comprising the thin film transistor at the pixel region to realize the driving display function; by setting the wiring region at one side of the light-transmitting region along the second direction, to set the signal wiring at the wiring region to realize the signal transmission function, and setting the first film layer at a side of the driving circuit layer facing away from the substrate substrate, setting the first film layer comprising the first opening located at the light-transmitting region, the first part located at the pixel region and the second part located at the wiring region, to ensure that the light-transmitting region has good light transmittance, under the premise that the surface height of the side of the first part facing away from the substrate substrate is consistent with the surface height of the side of the second part facing away from the substrate substrate, to ensure that the display panel has good flatness, which is conducive to simplifying the process after the first film layer of the display panel, for example, when the display panel comprises a light-emitting element, the setting of the light-emitting element after the first film layer is facilitated, which is conducive to improving the connection accuracy of the corresponding structures of the light-emitting element and the driving circuit layer.

[0017] It should be understood that the content described in this part is not intended to identify key or important features of the embodiments of the present application, nor to limit the scope of the present application. Other features of the present application will become apparent from the following description. BRIEF DESCRIPTION OF DRAWINGS

[0018] In order to more clearly illustrate the technical solutions in the embodiments of the present application, the drawings needed to be used in the embodiments will be briefly introduced. Obviously, the drawings in the following description are only some embodiments of the present application, and other drawings can be obtained by those skilled in the art without any creative effort based on these drawings.

[0019] Figure 1 is a structural schematic diagram of a display panel provided by an embodiment of the present application;

[0020] Figure 2 is a sectional structural schematic diagram of the display panel provided by the embodiment of the present application along B1-B3 section; Figure 1

[0021] Figure 3 is another sectional structural schematic diagram of the display panel provided by the embodiment of the present application along B1-B3 section; Figure 1

[0022] Figure 4 is a sectional structural schematic diagram of the display panel provided by the embodiment of the present application along B1-B2 section; Figure 1

[0023] Figure 5 is a sectional structural schematic diagram of the display panel provided by the embodiment of the present application along B3-B2 section; Figure 1

[0024] Figure 6 is another sectional structural schematic diagram of the display panel provided by the embodiment of the present application along B1-B2 section; Figure 1

[0025] Figure 7 is another structural schematic diagram of a display panel provided by the embodiment of the present application;

[0026] Figure 8 is a sectional structural schematic diagram of the display panel provided by the embodiment of the present application along B2-B3 section; Figure 7

[0027] Figure 9 is a sectional structural schematic diagram of the display panel provided by the embodiment of the present application along B1-B4 section; Figure 7

[0028] Figure 10 is a flow chart of a preparation method of a display panel provided by the embodiment of the present application;

[0029] Figure 11 is a structural schematic diagram of a preparation process of a display panel provided by the embodiment of the present application; ​​​​​​​

[0030] Figure 12 is a flow chart of a preparation method of a first film layer provided by an embodiment of the present application;

[0031] Figure 13 is a structural schematic diagram of a preparation process of a first film layer provided by an embodiment of the present application;

[0032] Figure 14 is a structural schematic diagram of another preparation process of a first film layer provided by an embodiment of the present application;

[0033] Figure 15 is a structural schematic diagram of still another preparation process of a first film layer provided by an embodiment of the present application;

[0034] Figure 16 is a flow chart of another preparation method of a display panel provided by an embodiment of the present application;

[0035] Figure 17 is a structural schematic diagram of a preparation process of another display panel provided by an embodiment of the present application;

[0036] Figure 18 is a structural schematic diagram of still another preparation process of a first film layer provided by an embodiment of the present application;

[0037] Figure 19 is a structural schematic diagram of still another preparation process of a first film layer provided by an embodiment of the present application;

[0038] Figure 20 is a flow chart of still another preparation method of a display panel provided by an embodiment of the present application;

[0039] Figure 21 is a structural schematic diagram of still another preparation process of a display panel provided by an embodiment of the present application;

[0040] Figure 22 is a structural schematic diagram of a display device provided by an embodiment of the present application. DETAILED DESCRIPTION

[0041] In order to enable persons skilled in the art to better understand the present application, the technical solutions in the embodiments of the present application will be described clearly and completely below with reference to the accompanying drawings in the embodiments of the present application. Obviously, the described embodiments are only a part of the embodiments of the present application, rather than all the embodiments of the present application. Based on the embodiments in the present application, all other embodiments obtained by persons skilled in the art without creative labor should fall within the protection scope of the present application.

[0042] It is to be understood that the terminology "first", "second" and the like used in the specification and the claims of the application as well as the above-described drawings is merely intended to distinguish between similar objects and not necessarily to describe a particular sequential or chronological order. It is to be understood that the use of data "first", "second", etc., can be interchanged, in proper instances, so that there is no sequence or order among the items being described by such data. Furthermore, the terms "comprise", "comprising", "include", "including", and the like, used in the specification and the claims of the application, are intended to be inclusive or open-ended and not restrictive. The term "comprising" and variations thereof as used in the specification and the claims are intended to indicate, open-ended, that the compositions and methods include the recited elements but not exclude others. The term "consisting of" is intended to exclude any element not specified in the claim. The term "consisting essentially of" is intended to exclude any element not specified in the claim except for an impurity that is present in the composition or process of making the same. Thus, the compositions and methods of the application include other steps, elements, compositions of matter not recited, which are necessary in the practice of the application.

[0043] As introduced in the background, when the flatness of the display panel is poor, it is not conducive to the subsequent process of the display panel. For example, after forming the driving circuit of the display panel, before transferring the micro light emitting element, if the upper surface height of the display panel is inconsistent, the distance between the transfer substrate for transferring the micro light emitting element and each position of the display panel will be inconsistent, so that the falling position of the micro light emitting element cannot be accurately controlled, which leads to that the micro light emitting element cannot be accurately electrically connected with the driving circuit, and further affects the bonding effect of the micro light emitting element.

[0044] Based on the above technical problem, the embodiment of the application provides a display panel, comprising: a light transmission area, a pixel area and a wiring area, the pixel area is located on one side of the light transmission area along a first direction, the wiring area is located on one side of the light transmission area along a second direction, the first direction and the second direction intersect; the width of the pixel area in the first direction is different from the width of the wiring area in the second direction; a substrate; a driving circuit layer located on one side of the substrate; the driving circuit layer comprises a thin film transistor, and the thin film transistor is located in the pixel area; a first film layer at least partially located on one side of the driving circuit layer away from the substrate; the first film layer comprises a first opening located in the light transmission area, a first part located in the pixel area and a second part located in the wiring area; the thickness of the first part in the direction perpendicular to the plane where the substrate is located is H1; the height difference between the surface on one side of the first part away from the substrate and the surface on one side of the second part away from the substrate is ΔH; wherein |ΔH| / H1≤5%.

[0045] According to the technical scheme, the pixel area is arranged on one side of the light-transmitting area along the first direction, and the driving circuit layer including the thin film transistor is arranged in the pixel area to realize the driving display function; the trace area is arranged on one side of the light-transmitting area along the second direction, the signal trace is arranged in the trace area to realize the signal transmission function, and the first film layer is arranged on the side of the driving circuit layer away from the substrate base plate, the first film layer includes the first opening located in the light-transmitting area, the first part located in the pixel area, and the second part located in the trace area, so that the surface height of the side surface of the first part away from the substrate base plate is kept consistent with the surface height of the side surface of the second part away from the substrate base plate under the premise that the light-transmitting area has good light transmittance, so as to ensure that the display panel has good flatness, which is beneficial to simplifying the process after the first film layer of the display panel, for example, when the display panel includes the light-emitting element, the light-emitting element after the first film layer can be conveniently arranged, and the connection accuracy of the light-emitting element and the corresponding structure of the driving circuit layer is improved.

[0046] Figure 1 is a structural schematic diagram of a display panel provided by an embodiment of the present application, Figure 2 is a structural schematic diagram of a display panel provided by an embodiment of the present application, Figure 1 is a cross-sectional structural schematic diagram of B1-B3 sections in the display panel, in combination with reference to Figure 1 and Figure 2 The display panel includes: a light-transmitting area A1, a pixel area A2, and a trace area A3, the pixel area A2 is located on one side of the light-transmitting area A1 along a first direction S1, the trace area A3 is located on one side of the light-transmitting area A1 along a second direction S2, the first direction S1 and the second direction S2 intersect; the width of the pixel area A2 in the first direction S1 is different from the width of the trace area A3 in the second direction S2; a substrate base plate 10; a driving circuit layer 20 located on one side of the substrate base plate 10; the driving circuit layer 20 includes a thin film transistor T, and the thin film transistor T is located in the pixel area A2; a first film layer 30 at least partially located on the side of the driving circuit layer 20 away from the substrate base plate 10; the first film layer 30 includes a first opening 30a located in the light-transmitting area A1, a first part 31 located in the pixel area A2, and a second part 32 located in the trace area A3; in the direction perpendicular to the plane where the substrate base plate 10 is located, the thickness of the first part 31 is H1; the height difference between the surface of the side of the first part 31 away from the substrate base plate 10 and the surface of the side of the second part 32 away from the substrate base plate 10 is ΔH; and |ΔH| / H1≤5%.

[0047] It can be understood that, on one side of the substrate 10, the driving circuit layer 20 can include a thin film transistor T disposed in the pixel area A2, so that the thin film transistor T realizes the driving display function; the driving circuit layer 20 can also include a signal trace 51 disposed in the trace area A3, for transmitting electrical signals; the light transmission area A1 has a relatively large light transmission rate, so that a light sensing element can be disposed at this position, or the display panel realizes transparent display, and the light transmission area A1 can be in a rectangular shape as shown in the figure, or other regular or irregular shapes such as a circular shape or an elliptical shape. Figure 1

[0048] For example, when the light transmission area A1 is in a rectangular shape, the first direction S1 and the second direction S2 can be perpendicular to each other, and at this time, the pixel area A2 can be disposed on one side of the light transmission area A1 along the first direction S1, and the trace area A3 is on the other side of the light transmission area A1 along the second direction S2, that is, the pixel area A2 and the trace area A3 are located on the adjacent two sides of the light transmission area A1, so that the signal trace disposed in the trace area A3 can transmit the corresponding signal from the other side of the light transmission area A1 opposite to the pixel area A2 to the display area A2, so that the thin film transistor T of the driving circuit layer of the pixel area A2 can drive the display. In a feasible embodiment, the areas arranged along the first direction S1 and located on the opposite sides of the light transmission area A1 can be different pixel areas A2, so that the light transmission area A1 on the opposite sides can realize display driving; the areas arranged along the second direction S2 and located on the opposite sides of the light transmission area A1 can be different trace areas A3, so that the thin film transistor and other devices of the pixel area A2 located on the opposite sides of the light transmission area A1 can be electrically connected through the signal traces disposed in the two trace areas A3, to realize signal transmission.

[0049] It can be understood that the driving circuit layer 20 includes but is not limited to the thin film transistor T and the signal trace 51, and in other optional embodiments, the driving circuit layer can also include a capacitor and other structures, and the embodiments of the present application do not make specific limitations.

[0050] Continuing to refer to Figure 1 and Figure 2 , the first film layer 30 is also disposed on the side of the driving circuit layer 20 away from the substrate 10, and the first film layer 30 can include an organic film layer and / or an inorganic film layer; when the first film layer 30 includes an organic film layer, the first film layer 30 can include photoresist and the like, and at this time, the first film layer 30 can be prepared by coating or printing process; when the first film layer 30 includes an inorganic film layer, the first film layer 30 can include silicon oxide and / or silicon nitride and the like, and at this time, the first film layer 30 can be prepared by deposition process.

[0051] ​The first film layer 30 has a first opening 30a in the light transmission area A1, so that light can pass through the first opening 30a, ensuring that the light transmission area A1 has a high light transmission rate. The first film layer 30 further includes a first portion 31 located in the pixel area A2 and a second portion 32 located in the wiring area A3. The height difference between the surface of the first portion 31 away from the substrate 10 and the surface of the second portion 32 away from the substrate 10 is ΔH. That is, if the plane on which the substrate 10 is located is taken as a reference plane, the height difference between the surface of the first portion 31 away from the substrate 10 and the surface of the second portion 32 away from the substrate 10 is ΔH, and the height difference ΔH satisfies |ΔH| / H1≤5%. That is, the height difference ΔH between the surface of the first portion 31 away from the substrate 10 and the surface of the second portion 32 away from the substrate 10 is not more than 5% of the thickness of the first portion 31, so that the surface height of the surface of the first portion 31 away from the substrate 10 and the surface of the second portion 32 away from the substrate 10 is substantially the same. In this way, the first film layer 30 located in the pixel area A2 and the first film layer 30 located in the wiring area A3 have good flatness, which is beneficial to simplify other process procedures of the display panel after the first film layer 30. For example, when the bonding process of the light emitting element is performed after the first film layer 30, the light emitting element can be prepared based on the first film layer 30 having good flatness, so that the light emitting element and the thin film transistor and other devices of the driving circuit layer can be accurately connected, and the bonding effect of the light emitting element is improved.

[0052] When the height difference ΔH between the surface of the first portion 31 away from the substrate 10 and the surface of the second portion 32 away from the substrate 10 satisfies |ΔH| / H1≤5%, the thickness of the first portion 31 in the direction perpendicular to the plane on which the substrate 10 is located and the thickness of the second portion 32 in the direction perpendicular to the plane on which the substrate 10 is located can be the same or different, which is not limited in the embodiments of the present application.

[0053] In an exemplary embodiment, since the width of the pixel region A2 in the first direction S1 is different from the width of the trace region A3 in the second direction S2, and the pixel region A2 and the trace region A3 are located at different sides of the light-transmitting region A1, and the light-transmitting region A1 is usually provided with the light-transmitting hole 20a, when the first film layer 30 is formed, the flow of the material of the first film layer at the pixel region A2 to the light-transmitting hole 20a of the light-transmitting region A1 and the flow of the material of the first film layer at the trace region A3 to the light-transmitting hole 20a of the light-transmitting region A1 are different, and there is a large height difference between the side surface of the material layer of the first film layer 30 at the pixel region A2 away from the substrate and the side surface of the material layer of the first film layer 30 at the trace region A3 away from the substrate. At this time, part of the first film layer 30 at the pixel region A2 and / or the trace region A3 can be removed by a photolithography process, so that the surface height of the first part 31 away from the substrate and the surface height of the second part 32 away from the substrate are basically consistent.

[0054] In the embodiment of the present application, the pixel region is arranged on one side of the light-transmitting region along the first direction, and the driving circuit layer including the thin film transistor is arranged on the pixel region to realize the driving display function. The trace region is arranged on one side of the light-transmitting region along the second direction, the signal trace is arranged in the trace region to realize the signal transmission function, and the first film layer is arranged on the side of the driving circuit layer away from the substrate. The first film layer includes the first opening in the light-transmitting region, the first part in the pixel region, and the second part in the trace region. The surface height of the first part away from the substrate and the surface height of the second part away from the substrate are kept consistent to ensure the flatness of the display panel, which is beneficial to simplify the process after the first film layer of the display panel, for example, when the display panel includes the light-emitting element, the light-emitting element after the first film layer can be arranged conveniently, and the connection accuracy of the light-emitting element and the corresponding structure of the driving circuit layer is improved.

[0055] Optionally, Figure 3 is another kind of cross section structure provided by the embodiment of the present application. Figure 1 The cross section structure of the embodiment of the present application is shown in FIG. 3, and the cross section structure of the embodiment of the present application is shown in FIG. 4. Figure 1 and Figure 3 The display panel further includes the black pixel definition layer 40 between the first film layer 30 and the driving circuit layer 20. The black pixel definition layer 40 includes the second opening 40a in the light-transmitting region A1, the third part 41 in the pixel region A2, and the fourth part 42 in the trace region A3. In the direction perpendicular to the plane where the substrate 10 is located, the first part 31 and the third part 41 overlap, the second part 32 and the fourth part 42 overlap, and the first opening 30a and the second opening 40a overlap.

[0056] The black pixel definition layer may include a photoresist material doped with black dye, which enables the black pixel definition layer to have the functions of light blocking and light absorption.

[0057] Specifically, by providing a black pixel definition layer 40 between the driving circuit layer 20 and the first film layer 30, the third portion 41 of the black pixel definition layer 40 can cover at least a portion of the thin-film transistors and other structures in the driving circuit layer 20, and the fourth portion 42 can cover at least a portion of the signal traces 51 and other structures in the wiring layer 50, in a direction perpendicular to the plane of the substrate. This reduces the amount of external light reaching the film layers containing the thin-film transistors T and other structures in the driving circuit layer 20, as well as the film layers containing the signal traces 51 and other structures in the wiring layer 50, preventing the thin-film transistors T and signal traces 51 from reflecting external light and affecting the display contrast of the display panel. Thus, by providing the black pixel definition layer 40, unnecessary reflections can be reduced, thereby improving the display contrast when the display panel is displaying, resulting in a better display effect. Furthermore, by placing the black pixel definition layer 40 between the first film layer 30 and the driving circuit layer 20, the first film layer 30 can also protect the black pixel definition layer 40, preventing it from being damaged or eroded by subsequent processes or external impacts, thus enabling the black pixel definition layer 40 to maintain good light blocking and light absorption.

[0058] Optional, Figure 4 This is an embodiment of the present invention that provides a method along... Figure 1 A schematic diagram of the cross-sectional structure at section B1-B2, as shown below. Figure 4 As shown, the driving circuit layer 20 also includes a light-transmitting hole 20a located in the light-transmitting area A1; the third part 41 includes a first sub-part 411 and a second sub-part 412 connected to each other; the second sub-part 412 is located between the first sub-part 411 and the light-transmitting hole 20a; at least part of the distance between the second sub-part 412 and the substrate 10 is less than the distance between the first sub-part 411 and the substrate 10.

[0059] Specifically, a light-transmitting hole 20a is provided in the driving circuit layer 20 located in the light-transmitting area A1. This involves removing at least a portion of the film layer 20 in the light-transmitting area A1 to form the light-transmitting hole 20a, thereby enabling the light-transmitting area A1 to have a high light transmittance. It is understood that removing at least a portion of the film layer 20 in the light-transmitting area A1 means removing part or all of the film layer 20 in the light-transmitting area A1. When part of the film layer 20 in the light-transmitting area A1 is removed, the film layer with lower light transmittance can be removed, while the film layer with higher light transmittance remains. When all the film layer in the light-transmitting area A1 is removed, the light-transmitting hole 20a in the light-transmitting area A1 can penetrate all the film layers of the driving circuit layer 20.

[0060] Specifically, due to the existence of the light transmission hole 20a in the light transmission area A1, light can enter from the light transmission hole 20a, and due to the multiple directions of light propagation, the light is easy to reach the driving circuit layer 20 of the pixel area A2 through the side wall of the light transmission hole 20a, so that the structures such as the thin film transistor in the driving circuit layer 20 of the pixel area A2 reflect the light, which affects the display effect of the display panel. By dividing the third part 41 of the black pixel defining layer 40 into the first sub-part 411 and the second sub-part 412, so that the distance between at least part of the second sub-part 412 and the substrate 10 is less than the distance between the first sub-part 411 and the substrate 10, at this time, the first sub-part 411 can be located on the side of the thin film transistor T away from the substrate, which can prevent the structures such as the thin film transistor T from reflecting the external light entering from the side of the driving circuit layer 20 away from the substrate 10, and at the same time, the second sub-part 412 is located at the side wall of the light transmission hole 20a close to the pixel area A2, so that the second sub-part 412 can block the light entering from the light transmission hole 20a, thereby preventing the light entering from the light transmission hole 20a from reaching the structures such as the thin film transistor T through the side wall of the light transmission hole 20a to form reflected light, so that the reflected light in the display panel can be effectively reduced, and the display effect of the display panel is improved.

[0061] In an optional embodiment, Figure 5 is a kind of along Figure 1 The cross-sectional structure schematic diagram of B3-B2 section in the figure, Figure 5 As shown in the figure, the fourth part 42 located in the wiring area A3 can also include two sub-parts, that is, the fourth part 42 can include the third sub-part 421 and the fourth sub-part 422 connected with each other; the fourth sub-part 422 is located between the third sub-part 421 and the light transmission hole 20a; and the distance between at least part of the fourth sub-part 422 and the substrate 10 is less than the distance between the third sub-part 421 and the substrate 10. At this time, the third sub-part 421 can be located on the side of the signal wiring 51 away from the substrate 10, which can prevent the external light from entering from the side of the driving circuit layer 20 away from the substrate 10 and being reflected by the structures such as the signal wiring 51; at the same time, by locating the fourth sub-part 422 at the side wall of the light transmission hole 20a close to the wiring area A3, the fourth sub-part 422 can block the light entering from the light transmission hole 20a, thereby preventing the light entering from the light transmission hole 20a from reaching the structures such as the signal wiring 51 through the side wall of the light transmission hole 20a to form reflection, which can reduce the reflected light in the display panel and further improve the display effect of the display panel.

[0062] Optionally, referring to Figure 4 The orthogonal projection of the third part 41 on the plane where the substrate 10 is located is located in the orthogonal projection of the first part 31 on the plane where the substrate 10 is located.

[0063] For example, when the third portion 41 comprises a first sub-portion 411 and a second sub-portion 412, the first portion 31 of the first film layer 30 can cover both the first sub-portion 411 and the second sub-portion 412 in the direction perpendicular to the plane on which the substrate 10 lies, i.e. the first portion 31 can comprise a structure on the side of the first sub-portion 411 facing away from the substrate 10 and a structure on the side of the second sub-portion 412 close to the light-transmitting region A1, and at this time, the structure on the side of the first sub-portion 411 facing away from the substrate 10 can protect the first sub-portion 411, and the structure on the side of the first sub-portion 411 facing away from the substrate 10 and the structure on the side of the second sub-portion 412 close to the light-transmitting region A1 can protect the second sub-portion 412. In this way, by making the orthogonal projection of the third portion 41 on the plane on which the substrate 10 lies be within the orthogonal projection of the first portion 31 on the plane on which the substrate 10 lies, the first portion 31 can fully protect the third portion 41 from being damaged or eroded.

[0064] Based on the same principle, continuing to refer to Figure 5 , the orthogonal projection of the fourth portion 42 on the plane on which the substrate 10 lies is within the orthogonal projection of the second portion 32 on the plane on which the substrate 10 lies.

[0065] Specifically, when the fourth portion 42 comprises a third sub-portion 421 and a fourth sub-portion 422, the second portion 32 of the first film layer 30 can cover both the third sub-portion 421 and the fourth sub-portion 422 in the direction perpendicular to the plane on which the substrate 10 lies, i.e. the second portion 32 can comprise a structure on the side of the third sub-portion 421 facing away from the substrate 10 and a structure on the side of the fourth sub-portion 422 close to the light-transmitting region A1, and at this time, the structure on the side of the third sub-portion 421 facing away from the substrate 10 can protect the third sub-portion 421, and the structure on the side of the third sub-portion 421 facing away from the substrate 10 and the structure on the side of the fourth sub-portion 422 close to the light-transmitting region A1 can protect the fourth sub-portion 422. In this way, by making the orthogonal projection of the fourth portion 42 on the plane on which the substrate 10 lies be within the orthogonal projection of the second portion 32 on the plane on which the substrate 10 lies, the second portion 32 can fully protect the fourth portion from being damaged or eroded.

[0066] Optionally, continuing to refer to Figure 3 or Figure 4 , the edge of the first portion 31 closest to the side of the light-transmitting region A1 is a first edge L1; the edge of the third portion 41 closest to the side of the light-transmitting region A1 is a third edge L3; the distance between the first edge L1 and the third edge L3 close to the same light-transmitting region A1 in the first portion 31 and the third portion 41 that intersect and overlap is AL1; and 2.8 pm ≤ AL1 ≤ 3.5 pm.

[0067] Specifically, the thickness of the first film layer 30 located on the side of the black pixel definition layer 40 is between 2.8 μm and 3.5 μm. This allows the side structure of the first film layer 30 near the light-transmitting area A3 to provide good protection for the second sub-part 412 of the black pixel definition layer 40, while ensuring the amount of light transmitted through the light-transmitting area A3. Furthermore, the first film layer 30 can be an organic film layer, typically applied by coating. The distance ΔL1 between the first side L1 and the third side L3 near the same light-transmitting area A1 is set to satisfy 2.8 μm ≤ ΔL1 ≤ 3.5 μm. This facilitates the coating of the first film layer 30 during the manufacturing process and allows the first film layer 30 located on the side of the driving circuit layer 20 near the light-transmitting area A1 to have a relatively thick thickness, thus ensuring that the first part 31 of the first film layer 30 does not break during the coating process.

[0068] Based on the same principle, refer to Figure 3 or Figure 5 Furthermore, the edge of the second part 32 near the light-transmitting area can be set to extend beyond the edge of the fourth part 42 near the light-transmitting area A1 by a distance ΔL1. This provides better protection for the fourth sub-part 422 of the black pixel definition layer 40 by the side structure of the first film layer 30 near the light-transmitting area A3, while ensuring the amount of light transmitted through the light-transmitting area A3. Additionally, when the first film layer 30 can be an organic film layer, it facilitates the coating of the first film layer 30 during the manufacturing process and ensures that the second part 32 of the first film layer 30 does not break during coating.

[0069] It is understood that the distance between the third side L3 of the third part 41 and the first side L1 of the first part 31 can be understood as the thickness of the first part 31 located on the sidewall of the light-transmitting hole 20a. The thickness of the first part 31 located on the side of the thin film transistor T away from the substrate 10 and the thickness of the second part 32 located on the side of the signal line 51 away from the substrate 10 can both be the same as or different from this thickness.

[0070] In an alternative embodiment, reference is made to... Figure 4 and Figure 5 Along the direction perpendicular to the plane of the substrate 10, the thickness T0 of the first film layer 30 ranges from 0 μm < T0 ≤ 0.5 μm. Thus, while ensuring that the first film layer 30 located on the side of the black pixel definition layer 40 facing away from the substrate 10 provides good protection for the black pixel definition layer 40, the thickness of the display panel can be reduced, which is beneficial for making the display panel thinner and lighter.

[0071] Optional, Figure 6 This is another method provided by the embodiments of the present invention. Figure 1A cross-sectional structure schematic diagram of a middle section B1-B2 of the display panel, the black pixel definition layer 40 further includes a first pixel opening 40b located in the pixel region A2; the first film layer 30 includes a second pixel opening 30b located in the pixel region A2; in a direction perpendicular to the plane where the substrate 10 is located, the first pixel opening 40b and the second pixel opening 30b overlap; the display panel further includes: a connecting electrode 60, located at least in the first pixel opening 40b; at least part of the connecting electrode 60 is electrically connected to the thin film transistor T through a via hole; a eutectic layer 70 located on the side of the connecting electrode 60 away from the substrate 10; a light emitting element 80 electrically connected to the connecting electrode 60 through the eutectic layer 70.

[0072] Specifically, by setting the first pixel opening 40b and the connecting electrode 60 in the first pixel opening 40b, at least part of the connecting electrode 60 is electrically connected to the thin film transistor T through a via hole, and the eutectic layer 70 is set on the side of the connecting electrode 60 away from the substrate 10, so that the light emitting element 80 can be bonded to the eutectic layer 70 and electrically connected to the connecting electrode 60 through the eutectic layer 70. The thin film transistor T can transmit the driving signal to the light emitting element 80 through the connecting electrode 60 and the eutectic layer 70, so as to realize the light emitting control of the light emitting element 80. Exemplarily, the light emitting element in the embodiment of the present application can include but is not limited to micro LED or mini LED and the like.

[0073] It can be understood that when the eutectic layer 70 is formed on the side of the connecting electrode 60 away from the substrate 10, a sacrificial layer is first formed on the side of the black pixel definition layer 40 away from the substrate 10, and then the sacrificial layer is etched to form an opening to expose at least part of the connecting electrode 60, and then the eutectic layer 70 is formed on the side of the connecting electrode 60 away from the substrate 10 using the sacrificial layer as a mask, and then the sacrificial layer is stripped to only leave the eutectic layer 70 on the side of the connecting electrode 60 away from the substrate 10. When stripping the sacrificial layer, a certain dose of etching solution is usually required, which has an etching effect on the black pixel definition layer 40, causing the black pixel definition layer 40 to fade, thereby affecting the light shielding performance of the black pixel definition layer 40. Therefore, by providing the first film layer 30 on the side of the black pixel definition layer 40 away from the substrate 10 before forming the sacrificial layer, the first film layer 30 can be formed on the side of the sacrificial layer away from the substrate 10, i.e. the sacrificial layer does not directly contact the black pixel definition layer, but contacts the first film layer 30. Therefore, when stripping the sacrificial layer, the etching solution does not come into contact with the black pixel definition layer 40, preventing the black pixel definition layer 40 from fading, and the first film layer 30 has a good protective effect on the black pixel definition layer 40. At the same time, the surface height of the first film layer 30 in the pixel area A2 and the wiring area A3 remains the same, so that when the light emitting element 80 is bonded to the connecting electrode 60 through the eutectic layer 70, the light emitting element 80 can be controlled to fall at a lower height, thereby ensuring that the light emitting element 80 is accurately bonded to the connecting electrode 60, improving the bonding yield of the light emitting element, and facilitating low-cost display panels.

[0074] Optionally, referring to Figure 6 , the edge of the first portion 31 closest to the side of the second pixel opening 30b is a second edge L2, and the edge of the third portion 41 closest to the side of the first pixel opening 40b is a fourth edge L4; the distance between the second edge L2 and the fourth edge L4 corresponding to the intersection and overlap of the first pixel opening 40b and the second pixel opening 30b in the first portion 31 and the third portion 41 is ΔL2; wherein 2.8 μm ≤ ΔL2 ≤ 3.5 μm.

[0075] Specifically, when forming the first pixel opening 40b and the second pixel opening 30b, the distance ΔL2 between the edges of the first portion 31 and the third portion 41 on the same side of the first pixel opening 40b and the second pixel opening 30b, i.e., the second edge L2 on the side closest to the second pixel opening 30b of the first portion 31 and the fourth edge L4 on the side closest to the first pixel opening 40b of the third portion 41, satisfies 2.8 μm ≤ ΔL2 ≤ 3.5 μm, so as to ensure that the first film layer 30 at the position close to the sidewall of the first pixel opening 40b of the black pixel definition layer 40 has a relatively thick thickness, and the first film layer 30 covering the sidewall of the black pixel definition layer 40 close to the first pixel opening 40b can have a good protective effect on the black pixel definition layer 40. In addition, when the first film layer 30 is an organic film layer, the first film layer 30 can be prevented from being broken during coating. At the same time, the distance range ΔL2 at the pixel opening is consistent with the distance range ΔL1 at the light transmission hole, which is beneficial to simplify the process.

[0076] Optionally, with reference back to Figure 6 , the driving circuit layer 20 includes at least one first inorganic layer 21 and at least one organic layer 22; the first inorganic layer 21 is located on the side of the organic layer 22 close to the substrate substrate; the first inorganic layer 21 includes at least a third opening 21a located in the light transmission area A1; the organic layer 22 includes at least a fourth opening 22a located in the light transmission area A1; the third opening 21a and the fourth opening 22a located in the same light transmission area A1, the orthographic projection of the third opening 21a on the plane of the substrate substrate 10 is located in the orthographic projection of the fourth opening 22a on the plane of the substrate substrate 10.

[0077] The driving circuit layer 20 can include a plurality of inorganic layers and a plurality of organic layers. The inorganic layers can include, for example, a buffer layer located on one side of the substrate 10, a semiconductor layer located on the side of the buffer layer away from the substrate 10, a gate layer located on the side of the semiconductor layer away from the substrate 10, a source-drain electrode layer located on the side of the gate away from the substrate 10, and a partial insulating layer located between two adjacent film layers. At least one of the inorganic layers (for example, the buffer layer) can be used as the first inorganic layer 21, and a third opening 21a of the light-transmitting area A1 can be formed in the first inorganic layer 21. The organic layers can include a partial insulating layer and a planarization layer located on the side of the thin film transistor T away from the substrate 10. At least a fourth opening 22a of the light-transmitting area A1 can be formed in the organic layer 22. Because the preparation processes of the organic layers and the inorganic layers are different, the organic layers and the inorganic layers are usually prepared separately, that is, after the third opening 21a of the first inorganic layer 21 is completed, the organic layer 22 and the fourth opening 22a of the organic layer 22 are formed. When the organic layer 22 is punched, the organic layer 22 has fluidity, and the material of the organic layer 22 can flow along the sidewall of the third opening 21a into the third opening 21a, thereby affecting the overall light transmittance of the light-transmitting area A1. By covering the third opening 21a of the first inorganic layer 21 with the fourth opening 22a of the organic layer 22, that is, by making the fourth opening 22a of the organic layer 22 larger than the third opening 21a, when the fourth opening 22a is formed, the material of the organic layer 22 having fluidity does not contact the sidewall of the third opening 21a and does not flow into the third opening 21a, thereby ensuring that the light-transmitting area A1 has high light transmittance.

[0078] Optionally, Figure 7 is another structural schematic diagram of a display panel provided by an embodiment of the present application, Figure 8 is a structural schematic diagram of a cross section along B2-B3 of FIG. 2B, Figure 7 is a structural schematic diagram of a cross section along B2-B3 of FIG. 2B, Figure 7 and Figure 8 The wiring area A3 includes a first wiring area A31 and a second wiring area A32 located on opposite sides of the light-transmitting area A1. The width of the first wiring area A31 in the second direction S2 is different from the width of the second wiring area A32 in the second direction S2. In a direction perpendicular to the plane in which the substrate 10 is located, the thickness of the second part 32 of the first wiring area A31 is T2. The maximum height difference between the side surface of the second part 32 of the first wiring area A31 away from the substrate 10 and the side surface of the second part 32 of the second wiring area A32 away from the substrate 10 is ΔH1. |ΔH1| / T2 ≤ 5%.

[0079] Specifically, routing areas A3 can be provided on both sides of the light-transmitting area A1, so that the signal traces are distributed on both sides of the light-transmitting area A1. Alternatively, the display panel may include multiple light-transmitting areas A1 arranged along the second direction S2, for example... Figure 7 As shown, the system may include three light-transmitting areas A1 arranged along the second direction S2. The middle light-transmitting area A1 requires routing areas A3 on both sides along the second direction S2. Therefore, routing areas A3 may include a first routing area A31 and a second routing area A32 along the second direction S2. Since the number or type of signal traces in different routing areas A3 may differ, the different routing areas A3 may have different widths. For example, the width of the first routing area A31 in the second direction S2 may be different from the width of the second routing area A32 in the second direction S2. The maximum height difference between the side surface of the second portion 32 in the first wiring area A31 facing away from the substrate 10 and the side surface of the second portion 32 in the second wiring area A32 facing away from the substrate 10 is ΔH1. This maximum height difference ΔH1 satisfies |ΔH1| / T2 ≤ 5%, that is, the maximum height difference ΔH1 between the side surface of the second portion 32 in the first wiring area A31 facing away from the substrate 10 and the side surface of the second portion 32 in the second wiring area A32 facing away from the substrate 10 does not exceed 5% of the thickness T2 of the second portion 32 in the first wiring area A31. This ensures that the heights of the side surface of the second portion 32 in the first wiring area A31 facing away from the substrate 10 and the side surface of the second portion 32 in the second wiring area A32 are basically consistent. In this way, the first film layer 30 in the first wiring area A31 and the first film layer 30 in the second wiring area A32 have relatively good flatness, which is beneficial to simplifying other process manufacturing of the display panel after the first film layer 30.

[0080] Wherein, when the maximum height difference ΔH1 between the side surface of the second portion 32 of the first trace area A31 facing away from the substrate 10 and the side surface of the second portion 32 of the second trace area A32 facing away from the substrate 10 satisfies |ΔH1| / T2 ≤ 5%, the thickness of the second portion 32 of the first trace area A31 in the direction perpendicular to the plane of the substrate 10 and the thickness of the second portion 32 of the second trace area A32 in the direction perpendicular to the plane of the substrate 10 can be the same or different, and the embodiments of the present invention do not specifically limit this.

[0081] In an alternative embodiment, Figure 9 This is an embodiment of the present invention that provides a method along... Figure 7 A schematic diagram of the cross-sectional structure of sections B1-B4, combined with... Figure 7 and Figure 9As shown, the pixel region A2 can further include a first pixel region A21 and a second pixel region A22, along the first direction, the width of the first pixel region A21 and the width of the second pixel region A22 are different; along the direction perpendicular to the plane where the substrate 10 is located, the thickness of the first portion 31 located in the first pixel region A21 is T3; the maximum height difference between the side surface of the first portion 31 located in the first pixel region A21 and the side surface of the first portion 31 located in the second pixel region A22 is ΔH2; wherein, |ΔH2| / T3 ≤ 5%.

[0082] Specifically, the display panel can further include pixel regions A2 with different widths along the first direction S1, for example, due to the size of the blue light emitting element 81 being larger than the size of the red light emitting element 82, at this time, the width of the first pixel region A21 where the blue light emitting element 81 is located along the first direction S1 is greater than the width of the second pixel region A22 where the red light emitting element 82 is located along the first direction S1. The maximum height difference between the side surface of the first portion 31 located in the first pixel region A21 and the side surface of the first portion 31 located in the second pixel region A22 is ΔH2, and the maximum height difference ΔH2 satisfies |ΔH2| / T3 ≤ 5%, that is, the maximum height difference ΔH2 between the side surface of the first portion 31 located in the first pixel region A21 and the side surface of the first portion 31 located in the second pixel region A22 does not exceed 5% of the thickness T3 of the first portion 31 located in the first pixel region A21, so that the side surface of the first portion 31 located in the first pixel region A21 and the side surface of the first portion 31 located in the second pixel region A22 are substantially consistent in height, and thus the first film layer 30 located in the first pixel region A21 and the first film layer 30 located in the second pixel region A22 have good flatness, which is beneficial to simplify other process procedures of the display panel after the first film layer 30.

[0083] Wherein, when the maximum height difference between the side surface of the first portion 31 located in the first pixel region A21 and the side surface of the first portion 31 located in the second pixel region A22 is ΔH2, and |ΔH2| / T3 ≤ 5%, the thickness of the first portion 31 located in the first pixel region A21 in the direction perpendicular to the plane where the substrate 10 is located and the thickness of the first portion 31 located in the second pixel region A22 in the direction perpendicular to the plane where the substrate 10 is located can be the same or different, and the present embodiment does not make specific limitation thereon.

[0084] Based on the same inventive concept, the embodiment of the present application also provides a preparation method of the display panel, which is used for preparing the display panel provided by any of the embodiments of the present application. Therefore, the preparation method of the display panel provided by the embodiment of the present application comprises the technical features of the display panel provided by any of the embodiments of the present application, and can achieve the beneficial effects of the display panel provided by any of the embodiments of the present application. The same parts can be referred to the description of the display panel provided by the embodiment of the present application, which will not be repeated here.

[0085] The display panel comprises a light-transmitting region, a pixel region and a wiring region. The pixel region is located at one side of the light-transmitting region along a first direction, and the wiring region is located at one side of the light-transmitting region along a second direction. The first direction and the second direction intersect. The width of the pixel region in the first direction is different from the width of the wiring region in the second direction. It can be understood that, due to the difference between the width of the pixel region in the first direction and the width of the wiring region in the second direction, the flatness of the display panel as a whole will be affected by the flowability of the film layer when the corresponding film layer is formed in the pixel region and the wiring region.

[0086] To solve the above technical problems, Figure 10 is a flow chart of a preparation method of a display panel provided by the embodiment of the present application, Figure 11 is a structural schematic diagram of a preparation process of a display panel provided by the embodiment of the present application, as Figure 10 shown, the preparation method of the display panel comprises:

[0087] S110, providing a substrate substrate.

[0088] Specifically, the substrate substrate can be a rigid substrate, for example, a glass substrate; the substrate substrate can also be a flexible substrate, at this time, the substrate substrate is prepared from a flexible material, for example, at least one of polyimide (PI) and polyethylene terephthalate (PET).

[0089] S120, forming a driving circuit layer on one side of the substrate substrate.

[0090] The driving circuit layer comprises a thin film transistor; the thin film transistor is located in the pixel region.

[0091] Specifically, referring to Figure 11The driving circuit layer 20 may include a thin-film transistor (TFT) T, which includes an active layer, a gate, a source, and a drain. In fabricating the driving circuit layer 20, a buffer layer may first be formed on the substrate 10. Then, a semiconductor layer may be formed on the side of the buffer layer facing away from the substrate 10, and the semiconductor layer may be patterned to form the active layer of the TFT. After forming an insulating layer on the side of the semiconductor layer facing away from the substrate, a gate layer may be formed on the same side, and the gate layer may be patterned to form the gate of the TFT. After forming an insulating layer on the same side of the gate layer facing away from the substrate, a source / drain electrode layer may be formed on the same side, and the source / drain electrode layer may be patterned to form the source and drain of the TFT. Furthermore, the driving circuit layer may also include other film layers, which may be formed sequentially according to the stacking order of the film layers; these will not be elaborated further here.

[0092] In addition, while forming structures such as thin-film transistors T in pixel region A2, signal traces 51 are also formed in trace region A3, so that signal traces 51 are at least partially equivalent to the structure of thin-film transistors T in pixel region A2. This simplifies the manufacturing process, reduces the number of film layers in the display panel, and makes the display panel low-cost and thin.

[0093] S130. A first film layer is formed on the side of the driving circuit layer away from the substrate.

[0094] Among them, such as Figure 11 As shown, the first film layer includes a first opening 30a located in the light-transmitting area A1, a first portion 31 located in the pixel area A2, and a second portion 32 located in the wiring area A3; the thickness of the first portion 31 is H1 along the direction perpendicular to the plane of the substrate 10; the height difference between the surface of the first portion 31 facing away from the substrate 10 and the surface of the second portion 32 facing away from the substrate 10 is ΔH; wherein |ΔH| / H1≤5%.

[0095] Specifically, the first film layer 30 can be an organic film layer or an inorganic film layer. When the first film layer 30 is an inorganic film layer, it can be deposited on the side of the driving circuit layer 20 away from the substrate 10 by deposition. When the first film layer 30 is an organic film layer, it can be formed on the side of the driving circuit layer 20 away from the substrate 10 by coating or other processes, such that the height difference ΔH between the surface of the first portion 31 of the first film layer 30 away from the substrate 10 and the surface of the second portion 32 of the first film layer 30 away from the substrate 10 satisfies |ΔH| / H1≤5%.

[0096] The embodiment of the present application forms the driving circuit layer including the thin film transistor on one side of the substrate, forms the first film layer on the side of the driving circuit layer away from the substrate, and sets the first film layer to include the first opening located in the light transmission area, the first part located in the pixel area, and the second part located in the wire area, so as to ensure that the light transmission area has good light transmittance, and to ensure that the display panel has good flatness by keeping the surface height of the side surface of the first part away from the substrate consistent with the surface height of the side surface of the second part away from the substrate, which is beneficial to simplify the process after the first film layer of the display panel, for example, when the display panel includes a light emitting element, the light emitting element after the first film layer can be conveniently arranged, and the connection accuracy of the light emitting element and the corresponding structure of the driving circuit layer is improved.

[0097] It can be understood that, since the width of the pixel area in the first direction is different from the width of the wire area in the second direction, and the pixel area and the wire area are located on different sides of the light transmission area, and the light transmission area is usually provided with a light transmission hole, when the first film layer is formed, the flow conditions of the material of the first film layer at the pixel area to the light transmission hole of the light transmission area and the flow conditions of the material of the first film layer at the wire area to the light transmission hole of the light transmission area are different, and there is a large height difference between the side surface of the material layer of the first film layer located in the pixel area away from the substrate and the side surface of the material layer of the first film layer located in the wire area away from the substrate. At this time, the first film layer can be patterned by a process such as photolithography.

[0098] Optionally, Figure 12 is a flowchart of a preparation method of a first film layer provided by the embodiment of the present application, Figure 13 is a structural schematic diagram of a preparation process of the first film layer provided by the embodiment of the present application, as Figure 12 shown, the preparation method of the first film layer includes:

[0099] S131, forming a material layer of the first film layer on the side of the driving circuit layer away from the substrate.

[0100] S132, patterning the material layer of the first film layer by using a first mask plate, so as to remove the material layer of the first film layer located in the light transmission area to form the first opening, and remove part of the material layer of the first film layer in the pixel area and / or the wire area to form the first part and the second part respectively.

[0101] Specifically, as Figure 13As shown, the material layer with a relatively thick thickness, for example, 4 μm, can be coated on the side of the driving circuit layer 20 away from the substrate 10, so as to ensure the integrity of the material layer of the first film layer on the side of the driving circuit layer away from the substrate 10; at this time, the thickness of the material layer of the first film layer is relatively large, and the surface height of the material layer of the first film layer on the side away from the substrate 10 in the pixel area is different from the surface height of the material layer of the first film layer on the side away from the substrate 10 in the track area; therefore, after the material layer of the first film layer is formed, the material layer of the first film layer can be patterned by using the first mask plate 01, that is, the material layer of the first film layer in the light-transmitting area A1 is removed to form the first opening 30a, and according to the surface height of the material layer of the first film layer on the side away from the substrate 10 in the pixel area A2 and the surface height of the material layer of the first film layer on the side away from the substrate 10 in the track area, the material layer of the first film layer in the pixel area and / or the track area is appropriately removed to form the first part 31 and the second part 32, respectively.

[0102] For example, the material layer of the first film layer 30 can be a positive photoresist material or a negative photoresist material, and the embodiments of the present application do not make specific limitations thereon. Among them, the exposed part of the positive photoresist material will dissolve in the developing solution after photochemical reaction, and the unexposed part will not dissolve in the developing solution; the exposed part of the negative photoresist material is cross-linked and solidified and does not dissolve in the developing solution, and the unexposed part dissolves in the developing solution; in order to facilitate explanation, the following embodiments are exemplarily described by taking the material layer of the first film layer 30 as a positive photoresist material without special instructions.

[0103] Optionally, continuing to refer to Figure 13 , the first mask plate 01 includes a first area 01a, a second area 01b and a third area 01c; the first area 01a corresponds to the pixel area A2, the second area 01b corresponds to the track area A3, and the third area 01c corresponds to the light-transmitting area A1; the light transmittance of the third area 01c is greater than the light transmittance of the first area 01a and the light transmittance of the second area 01b; in combination with the reference Figure 1 , the width of the pixel area A2 in the first direction S1 is greater than the width of the track area A3 in the second direction S2, and the light transmittance of at least part of the first area 01a is greater than the light transmittance of the second area S2; or, the width of the pixel area A2 in the first direction S1 is less than the width of the track area A3 in the second direction S2, and the light transmittance of at least part of the first area 01a is less than the light transmittance of the second area 01b.

[0104] Specifically, when the first mask plate 01 is used to pattern the first film layer 30, the first area 01a of the first mask plate 01 can overlap the pixel area A2 of the display panel, the second area 01b can overlap the wire area A3 of the display panel, and the third area 01c can overlap the light-transmitting area A1 in the direction perpendicular to the plane on which the substrate 10 is located. The light transmittance of the third area 01c is greater than that of the first area 01a and the second area 01b, which can ensure that most of the first film layer 30 in the light-transmitting area A3 is removed to form the first opening 30a. In addition, when the width of the pixel area A2 in the first direction S1 is greater than the width of the wire area A3 in the second direction S2, the material layer of the first film layer 30 in the wire area A3 flows to the light-transmitting holes 20a in the light-transmitting area A1 on both sides of the wire area A3, so that the thickness of the first film layer 30 on the side away from the substrate 10 of the wire area A3 is relatively thin; and the material layer of the first film layer 30 in the pixel area A2 only close to the light-transmitting holes 20a in the light-transmitting area A1 flows into the light-transmitting holes 20a, so that most of the material layer of the first film layer 30 in the pixel area A2 has a relatively thick thickness; at this time, the light transmittance of at least part of the first area 01a can be greater than that of the second area 01b, so that the material layer of the first film layer corresponding to the first area 01a has a relatively large exposure amount, and the material layer of the first film layer corresponding to the second area 01b has a relatively small exposure amount, so that in the subsequent development process, the removal amount of the material layer of the first film layer 30 in the pixel area A2 is greater than that of the material layer of the first film layer 30 in the wire area A3, to form the first part 31 in the pixel area A2 and the second part 32 in the wire area A3, respectively, so as to ensure that the surface height of the first part 31 of the first film layer 30 on the side away from the substrate 10 and the surface height of the second part 32 of the first film layer 30 on the side away from the substrate 10 are consistent.

[0105] Based on the same principle, when the width of the pixel area A2 in the first direction S1 is less than the width of the wire area A3 in the second direction S2, the light transmittance of at least part of the first area 01a can be less than that of the second area 01b, so as to achieve the effect that the surface height of the first part 31 of the first film layer 30 on the side away from the substrate 10 and the surface height of the second part 32 of the first film layer 30 on the side away from the substrate 10 are relatively consistent.

[0106] It can be understood that the light transmittance of the third area 01c is greater than that of the first area 01a and the second area 01b, that is, the light transmittance of the third area 01c can be 100%, and the light transmittance of the first area 01a and the second area 01b can be less than 100%, which can be designed as needed, and the embodiments of the present application do not make specific limitations thereto.

[0107] In an optional embodiment, the wiring area may include a first wiring area and a second wiring area located on opposite sides of the light-transmitting area; along the second direction, the width of the first wiring area is greater than the width of the second wiring area. In this case, the thickness and surface height of the material layer of the first film formed by the first wiring area and the second wiring area will also differ. To solve this problem... Figure 14 This is a schematic diagram of another preparation process of the first film layer provided in an embodiment of the present invention, as shown below. Figure 14 As shown, at least a portion of the second region 01b1 corresponding to the first trace region A31 has a higher light transmittance than the second region 01b2 corresponding to the second trace region A32.

[0108] Specifically, when the width of the first wiring region A31 along the second direction S2 is greater than the width of the second wiring region A32 along the second direction S2, the first film layer 30 in the second wiring region A32 is thinner due to flow towards the two sidewalls. In the first wiring region A31, only the first film layer 30 located at the edge of the first wiring region A31 is thinner due to fluidity, while the first film layer 30 located in the middle of the first wiring region A31 is thicker. Therefore, the transmittance of at least a portion of the second region 01b1 corresponding to the first wiring region A31 can be set to be greater than the transmittance of the second region 01b2 corresponding to the second wiring region A32. This results in the material layer of the first film corresponding to the first wiring region A31 having a larger exposure, while the material layer of the first film corresponding to the second wiring region A32 has a smaller exposure. This ensures that during the subsequent development process, the amount of material removed from the first film 30 in the first wiring region A31 is greater than the amount of material removed from the first film 30 in the second wiring region A32. This ensures that the height of the side surface of the first film 30 in the first wiring region A31 facing away from the substrate 10 and the side surface of the first film 30 in the second wiring region A32 facing away from the substrate 10 are basically the same.

[0109] Similarly, when the width of the second wiring area A32 along the second direction S2 is greater than the width of the first wiring area A31 along the second direction S2, the transmittance of at least a portion of the second region 01b2 corresponding to the second wiring area A32 can be set to be greater than the transmittance of the second region 01b1 corresponding to the first wiring area A31. This results in the material layer of the first film corresponding to the second wiring area A32 having a larger exposure, while the material layer of the first wiring area A31 and its corresponding first film has a smaller exposure. This ensures that during the subsequent development process, the amount of material removed from the first film 30 in the second wiring area A32 is greater than the amount of material removed from the first film 30 in the first wiring area A31. This achieves the effect that the height of the side surface of the first film 30 in the first wiring area A31 facing away from the substrate 10 and the side surface of the first film 30 in the second wiring area A32 facing away from the substrate 10 are basically the same.

[0110] Based on the same principle, the pixel region includes a first pixel region and a second pixel region; along the first direction, the width of the first pixel region is greater than the width of the second pixel region. In this case, the thickness and surface height of the material layer of the first film formed by the first and second pixel regions will also differ. To solve this problem... Figure 15 This is a schematic diagram of the preparation process of another first film layer provided in an embodiment of the present invention, as shown below. Figure 15 As shown, at least a portion of the second region 01a1 corresponding to the first pixel region A21 has a higher transmittance than the second region 01a2 corresponding to the second pixel region A22.

[0111] Specifically, the material layer of the first film corresponding to the first pixel area A21 has a larger exposure, while the material layer of the first film corresponding to the second pixel area A22 has a smaller exposure. This is so that during the subsequent development process, the amount of material removed from the first film 30 in the first pixel area A21 is greater than the amount of material removed from the first film 30 in the second pixel area A22. This ensures that the heights of the side surface of the first film 30 in the first pixel area A21 facing away from the substrate 10 and the side surface of the first film 30 in the second pixel area A22 facing away from the substrate 10 are basically the same.

[0112] Based on the above embodiments, Figure 16 This is a flowchart of another method for manufacturing a display panel provided in an embodiment of the present invention. Figure 17 This is a schematic diagram of the fabrication process of another display panel provided in an embodiment of the present invention, as shown below. Figure 16 As shown, the method for manufacturing this display panel includes:

[0113] S310 provides a substrate.

[0114] S320, A driving circuit layer is formed on one side of the substrate.

[0115] S330, at least on the side of the driving circuit layer facing away from the substrate, a black pixel definition layer is formed.

[0116] The black pixel definition layer includes a second opening 40a located in the light-transmitting area, a third part 41 located in the pixel area A2, and a fourth part 42 located in the trace area A3.

[0117] For details, please refer to Figure 16 Before forming the first film layer 30, a black pixel definition layer 40 is formed on the side of the driving circuit board 20 away from the substrate 10. That is, the material of the black pixel definition layer 40 is coated on the side of the driving circuit board 20 away from the substrate 10, and then the black pixel definition layer 40 is patterned.

[0118] For example, the material of the black pixel definition layer 40 can be either a positive photoresist material or a negative photoresist material. This embodiment of the invention does not specifically limit this; the following description uses a negative photoresist material for the black pixel definition layer 40 as an example to illustrate its fabrication process. When the material of the black pixel definition layer 40 is a negative photoresist material, the area where the mask used to pattern the black pixel definition layer 40 overlaps with the light-transmitting area A1 can be configured to have lower light transmittance, while the area overlapping with the pixel area A2 and the wiring area A3 can have higher light transmittance. This forms the second opening 40a in the light-transmitting area A1, the third portion 41 in the pixel area A2, and the fourth portion 42 in the wiring area A3.

[0119] S340, A material layer for forming a first film layer on the side of the driving circuit layer away from the substrate.

[0120] S350, The material layer of the first film layer is patterned using a first mask to remove the material layer of the first film layer located in the light-transmitting area to form a first opening, and the material layer of the first film layer in the pixel area and / or the wiring area is removed to form a first part and a second part respectively.

[0121] For example, when the material layer of the first film layer is patterned using the first mask, in the direction perpendicular to the plane of the substrate, the first region overlaps with the third part, the second region covers the fourth part, and the third region overlaps with the second opening.

[0122] Specifically, since the black pixel definition layer 40 includes a second opening 40a located in the light-transmitting area A1, a third part 41 located in the pixel area A2, and a fourth part 42 located in the wiring area A3, the first area 01a of the first mask plate 01 can be set to overlap with the third part 41, the second area 01b can overlap with the fourth part 42, and the third area 01c can overlap with the second opening 40a. In this way, the first part 31 formed by exposing the first film layer 30 of the first area 01a can overlap with the third part 41, the second part 32 formed by exposing the first film layer 30 of the second area 01b can overlap with the fourth part 42, and the first opening 30a formed by exposing the first film layer 30 of the third area 01c can overlap with the second opening 40a. Thus, the first part 31 can protect the third part 41, the second part 32 can protect the fourth part 42, and both the first opening 30a and the second opening 40a can be used for light transmission.

[0123] Optional, continue to refer to Figure 17The edge of the third part 41 located in pixel area A2 that is closest to the light-transmitting area A1 is the third edge L3; the edge of the first area 01a that is closest to the third area 01c is the fifth edge L5; among the overlapping first area 01a and the third part 41, the shortest distance between the fifth edge L5 and the third edge L3 corresponding to the same light-transmitting area A1 is ΔL; where 2.8μm ≤ ΔL ≤ 3.5μm.

[0124] Specifically, in the overlapping first region 01a and third part 41, the boundary of the first region 01a of the first mask plate 01 extends beyond the boundary of the third part 41. That is, the shortest distance ΔL between the fifth side L5 and the third side L3 corresponding to the same light-transmitting area A1 satisfies 2.8μm ≤ ΔL ≤ 3.5μm. On the one hand, this ensures that the first opening 30a is large enough to meet the opening process requirements of the first mask plate 01. On the other hand, after the first film layer 30 is formed, the distance ΔL1 between the first side L1 and the third side L3 near the same light-transmitting area A1 in the overlapping first part 31 and third part 41 can also satisfy 2.8μm ≤ ΔL1 ≤ The thickness of 3.5μm makes the first film layer 30 near the light-transmitting area A1 thicker, preventing the first film layer 30 from being damaged due to excessive exposure. This allows the first film layer 30 to fully cover the black pixel definition layer 40, thus protecting the black pixel definition layer 40 from damage or corrosion in subsequent processes.

[0125] Optional, continue to refer to Figure 17 The driving circuit layer 20 also includes a light-transmitting hole 20a located in the light-transmitting region A1; the third part 41 includes a first sub-part 411 and a second sub-part 412 connected to each other; the second sub-part 412 is located between the first sub-part 411 and the light-transmitting hole 20a; at least a portion of the distance between the second sub-part 412 and the substrate 10 is smaller than the distance between the first sub-part 411 and the substrate 10; when the material layer of the first film layer 30 is patterned using the first mask 01, the first region 01a at least covers the first sub-part 411 in a direction perpendicular to the plane of the substrate 10. Thus, after exposure and development through the first region 01a, a first part 31 that at least covers the first sub-part 411 can be formed.

[0126] Optional, continue to refer to Figure 17 When the material layer of the first film layer 30 is patterned using the first mask plate 01, the first region 01a also covers the second sub-part 412 in a direction perpendicular to the plane of the substrate 10.

[0127] Specifically, since the light transmittance of the first region 01a is less than that of the third region 01c, by having the first region 01a simultaneously cover the first sub-part 411 and the second sub-part 412, the material of the first film layer at the first sub-part 411 and the second sub-part 412 will not be completely removed, thereby forming a first part 31 that simultaneously covers the first sub-part 411 and the second sub-part 412, so that the first part 31 can simultaneously protect the first sub-part 411 and the second sub-part 412.

[0128] Optional, Figure 18 This is a schematic diagram of the preparation process of another first film layer provided in an embodiment of the present invention, as shown below. Figure 17 As shown, the first mask plate 01 further includes a fourth region 01d; the fourth region 01d is located between the first region 01a and the third region 01c; when the first mask plate 01 is used to pattern the material layer of the first film layer 30, the fourth region 01d covers the second sub-part 412 in a direction perpendicular to the plane of the substrate 10; wherein, the light transmittance of the fourth region 01d is less than the light transmittance of the first region 01a.

[0129] Specifically, when the third part 41 includes a first sub-part 411 located on the side of the driving circuit layer 20 away from the substrate 10 and a second sub-part 412 located on the sidewall of the light-transmitting hole 20a of the driving circuit layer 20, a first region 01a can be set to cover the first sub-part 411 and a fourth region 01d can be set to cover the second sub-part 412. The light transmittance of the fourth region 01d is set to be less than that of the first region 01a, so that the first film layer 30 covering the second sub-part 412 is thicker, which can effectively prevent the first film layer 30 from breaking during the coating process.

[0130] Based on the same principle, a fourth region 01d can also be set between the second region 01b and the third region 01c, such that the light transmittance of the fourth region 01d is less than that of the second region 01b, so that the second part 32 formed can effectively cover the fourth part 42 to protect the fourth part 42.

[0131] It is understood that the transmittance of the fourth zone 01d is less than that of the first zone 01a and the second zone 01b. In this case, the transmittance of the fourth zone 01d can be set to 0%, while the transmittance of the first zone 01a and the second zone 01b are both greater than 0%. This can be set as needed, and the embodiments of the present invention do not impose specific limitations on this.

[0132] Optional, Figure 19 This is a schematic diagram of the preparation process of another first film layer provided in an embodiment of the present invention, as shown below. Figure 19As shown, the black pixel definition layer 40 also includes a first pixel opening 40b; the first mask 01 also includes a fifth region 01e; the first region 01a surrounds the fifth region 01e; when the material layer of the first film layer 30 is patterned using the first mask 01, the fifth region 01e overlaps with the first pixel opening 40b in a direction perpendicular to the plane of the substrate 10; the transmittance of the fifth region 01e is greater than the transmittance of the first region 01a and the transmittance of the second region 01b.

[0133] Specifically, in order for the thin-film transistor T in the driving circuit layer 20 to output a driving signal to the light-emitting element, a first pixel opening 40b can be provided in the black pixel definition layer 40 located in pixel region A2, so that the first pixel opening 40b can expose the connection structure (e.g., connection electrode) between the thin-film transistor T and the light-emitting element. Based on this, when patterning the first film layer 30, the fifth region 01e can be arranged to overlap with the first pixel opening 40b, so that the first film layer 30 can form a second pixel opening 30b located in pixel region A2, and the second pixel opening 30b overlaps with the first pixel opening 40b, which facilitates the subsequent setting of the light-emitting element.

[0134] It is understood that the transmittance of the fifth zone 01e is greater than that of the first zone 01a and the second zone 01b. That is, the transmittance of the fifth zone 01e can be 100%, while the transmittance of the first zone 01a and the second zone 01b can both be less than 100%. This can be designed as needed, and the embodiments of the present invention do not impose specific limitations on this.

[0135] Optional, continue to refer to Figure 19 When the material layer of the first film layer 30 is patterned using the first mask plate 01, the first region 01a overlaps with a portion of the first pixel opening 40b in the direction perpendicular to the plane of the substrate 10.

[0136] Specifically, by setting the first region 01a to overlap with part of the first pixel opening 40b, a first film layer 30 can be formed on the sidewall of the black pixel definition layer 40 near the first pixel opening 40b, so that the first film layer 30 can completely cover the black pixel definition layer 40, thereby enabling the first film layer 30 to effectively protect the black pixel definition layer 40.

[0137] Optional, Figure 20 This is a flowchart of another method for manufacturing a display panel provided in an embodiment of the present invention. Figure 21 This is a schematic diagram of the manufacturing process of another display panel provided in an embodiment of the present invention, as shown below. Figure 20 As shown, the method for manufacturing this display panel includes:

[0138] S411, Provides a substrate.

[0139] S412, A thin-film transistor is formed on one side of a substrate.

[0140] S413. A connection electrode is formed on the side of the thin-film transistor away from the substrate.

[0141] Among them, such as Figure 21 As shown, at least part of the connecting electrode 60 is electrically connected to the thin-film transistor T through a via.

[0142] Specifically, when forming a driving circuit layer on one side of the substrate 10, a thin film transistor T can be formed on one side of the substrate 10 first, and then a planarization layer can be formed on the side of the thin film transistor T away from the substrate, with a via through the planarization layer; a connection electrode layer can be formed on the side of the planarization layer away from the substrate 10, and the connection electrode layer can be patterned to form a connection electrode 60, so that the connection electrode 60 is electrically connected to the thin film transistor T through the via through the planarization layer.

[0143] S414. A black pixel definition layer is formed on at least one side of the driving circuit layer away from the substrate.

[0144] The black pixel definition layer includes a second opening in the light-transmitting area, a third part in the pixel area, a fourth part in the wiring area, and a first pixel opening, with the connecting electrode located at least within the first pixel opening.

[0145] S415. A first film layer is formed on the side of the driving circuit layer away from the substrate.

[0146] S416. A sacrificial layer is formed on the side of the first film layer away from the substrate.

[0147] S417. Pattern the sacrificial layer to form mask openings in the sacrificial layer.

[0148] Specifically, in the direction from the substrate to the sacrificial layer, the width of the mask opening gradually decreases; in the direction perpendicular to the plane of the substrate, the mask opening overlaps with the first pixel opening.

[0149] Specifically, such as Figure 21 As shown, the sacrificial layer 90 can be patterned by etching with an etchant or by photolithography to form a mask opening overlapping the first pixel opening 40b. The width of the mask opening gradually decreases in the direction from the substrate 10 to the sacrificial layer 90. This ensures that the eutectic layer formed on the connecting electrode 60 and the eutectic layer 70 on the sacrificial layer 90 are independent and unconnected during the subsequent formation of the eutectic layer, facilitating the subsequent peeling off of the sacrificial layer 90.

[0150] S418. Using the sacrificial layer as a mask, a eutectic layer is formed on the side of the connecting electrode away from the substrate.

[0151] The eutectic layer 70 can be made of inorganic materials and can be formed on the side of the connecting electrode 60 away from the substrate by deposition or other methods. Since the width of the mask opening gradually decreases in the direction from the substrate 10 to the sacrificial layer 90, a step difference will be formed between the eutectic layer 70 on the side of the sacrificial layer 90 away from the substrate and the eutectic layer 70 on the side of the connecting electrode 60 away from the substrate during the deposition of the eutectic layer, resulting in a break, so that the two parts of the eutectic layer 70 are independent and unconnected to each other.

[0152] S419. After the eutectic layer is formed, the sacrificial layer is peeled off.

[0153] Specifically, after the eutectic layer 70 is formed, the sacrificial layer 90 is peeled off, leaving only the eutectic layer 70 on the connecting electrode 60, so that the light-emitting element 80 can be bonded to the connecting electrode 60 through the eutectic layer 70 in subsequent processes. The sacrificial layer 90 can be peeled off by etching with an etchant.

[0154] Understandably, since a first film layer 30 is formed on the side of the black pixel definition layer 40 facing away from the substrate 10 before the sacrificial layer 90 is formed, the etchant will not come into contact with the black pixel definition layer 40 when the sacrificial layer 90 is peeled off, thus preventing the black pixel definition layer 40 from fading. In other words, by forming a first film layer 30 on the side of the black pixel definition layer 40 facing away from the substrate 10 before the sacrificial layer 90 is formed, the first film layer 30 can protect the black pixel definition layer 40 and ensure the anti-reflection effect of the black pixel definition layer 40.

[0155] S420 provides a light-emitting element and bonds the light-emitting element to the connecting electrode through a eutectic layer.

[0156] Specifically, the light-emitting elements 80 can be transferred to the side of the driving circuit layer 20 away from the substrate using a mass transfer method, so that the light-emitting elements 80 are bonded to the connecting electrodes 60 through the eutectic layer 70. Simultaneously, since the surface height of the display panel on the side away from the substrate 10 is relatively uniform, the falling height of each light-emitting element 80 is consistent when transferring it to the side of the driving circuit layer 20 away from the substrate. This allows for more precise control of the mass transfer of each light-emitting element 80, resulting in good bonding of the eutectic layers of each light-emitting element 80.

[0157] In this embodiment of the invention, after the black pixel definition layer is prepared, a first film layer is first formed on the side of the black pixel definition layer away from the substrate. After the first film layer is patterned, a sacrificial layer is formed on the side of the first film layer away from the substrate. This ensures that when the sacrificial layer is peeled off, the first film layer can protect the black pixel definition layer from corrosion or damage, and ensures that the surface height of the first film layer on the side away from the substrate is consistent in each region. This ensures that when the light-emitting elements are transferred to the display panel, the falling height of each light-emitting element 80 is consistent, which can achieve more precise control over the mass transfer of each light-emitting element, resulting in good bonding effect of the eutectic layer of each light-emitting element.

[0158] Based on the same inventive concept, embodiments of the present invention also provide a display device, which includes the display panel provided in any embodiment of the present invention. Therefore, the display device provided in the embodiments of the present invention includes the technical features of the display panel provided in any embodiment of the present invention, and can achieve the beneficial effects of the display panel provided in any embodiment of the present invention. The similarities can be referred to the above description of the display panel provided in the embodiments of the present invention, and will not be repeated here.

[0159] Figure 22 This is a schematic diagram of the structure of a display device provided in an embodiment of the present invention. The display device 00 can be any electronic product with display function, including but not limited to the following categories: vehicle display, VR display, television, laptop, desktop display, tablet computer, digital camera, mobile phone, smart bracelet, smart glasses, vehicle display, medical equipment, industrial control equipment, touch interactive terminal, etc.

[0160] It should be understood that the various forms of processes shown above can be used, with steps reordered, added, or deleted. For example, the steps described in this invention can be executed in parallel, sequentially, or in different orders, as long as the desired result of the technical solution of this invention can be achieved, and this is not limited herein.

[0161] The specific embodiments described above do not constitute a limitation on the scope of protection of this invention. Those skilled in the art should understand that various modifications, combinations, sub-combinations, and substitutions can be made according to design requirements and other factors. Any modifications, equivalent substitutions, and improvements made within the spirit and principles of this invention should be included within the scope of protection of this invention.

Claims

1. A display panel, characterized by, The display panel comprises: a light-transmitting region, a pixel region and a wiring region, the pixel region is located on one side of the light-transmitting region along a first direction, the wiring region is located on one side of the light-transmitting region along a second direction, the first direction and the second direction intersect; a width of the pixel region in the first direction is different from a width of the wiring region in the second direction; a substrate substrate; a drive circuit layer located on one side of the substrate substrate; the drive circuit layer comprises a thin film transistor, and the thin film transistor is located in the pixel region; a first film layer located at least partially on one side of the drive circuit layer away from the substrate substrate; the first film layer comprises a first opening located in the light-transmitting region, a first part located in the pixel region, and a second part located in the wiring region; in a direction perpendicular to a plane in which the substrate substrate is located, a thickness of the first part is H1; a height difference between a surface on one side of the first part away from the substrate substrate and a surface on one side of the second part away from the substrate substrate is ΔH; wherein |ΔH| / H1≤5%; a black pixel definition layer located between the first film layer and the drive circuit layer.

2. The display panel of claim 1, wherein, The black pixel definition layer comprises a second opening located in the light-transmitting region, a third part located in the pixel region, and a fourth part located in the wiring region; in a direction perpendicular to the plane in which the substrate substrate is located, the first part and the third part overlap, and the second part and the fourth part overlap, and the first opening and the second opening overlap.

3. The display panel of claim 2, wherein, The drive circuit layer further comprises a light-transmitting hole located in the light-transmitting region; The third part comprises a first subpart and a second subpart connected to each other; the second subpart is located between the first subpart and the light-transmitting hole; A distance between at least part of the second subpart and the substrate substrate is smaller than a distance between the first subpart and the substrate substrate.

4. The display panel of claim 3, wherein, A normal projection of the third part on the plane in which the substrate substrate is located is located within a normal projection of the first part on the plane in which the substrate substrate is located.

5. The display panel of claim 2, wherein, An edge of the first part closest to one side of the light-transmitting region is a first edge; an edge of the third part closest to one side of the light-transmitting region is a third edge; In the first part and the third part that overlap each other, a distance between the first edge and the third edge closest to the same light-transmitting region is ΔL1; wherein 2.8 μm ≤ ΔL1 ≤ 3.5 μm.

6. The display panel of claim 2, wherein, The black pixel definition layer further comprises a first pixel opening located in the pixel region; the first film layer comprises a second pixel opening located in the pixel region; In a direction perpendicular to the plane in which the substrate substrate is located, the first pixel opening and the second pixel opening overlap; The display panel further comprises: a connection electrode located at least in the first pixel opening; at least part of the connection electrode is electrically connected to the thin film transistor through a via hole; a eutectic layer located on one side of the connection electrode away from the substrate substrate; a light-emitting element electrically connected to the connection electrode through the eutectic layer.

7. The display panel of claim 6, wherein, An edge of the first part closest to one side of the second pixel opening is a second edge, and an edge of the third part closest to one side of the first pixel opening is a fourth edge; The interval between the second side and the fourth side corresponding to the intersecting first pixel opening and the second pixel opening in the first portion and the third portion is ΔL2; wherein 2.8 μm ≤ ΔL2 ≤ 3.5 μm.

8. The display panel of claim 1, wherein, The driving circuit layer comprises at least one first inorganic layer and at least one organic layer; the first inorganic layer is located on the side of the organic layer close to the substrate base plate; The first inorganic layer comprises at least a third opening located in the light-transmitting area; the organic layer comprises at least a fourth opening located in the light-transmitting area; In the third opening and the fourth opening located in the same light-transmitting area, the orthographic projection of the third opening on the plane of the substrate base plate is located in the orthographic projection of the fourth opening on the plane of the substrate base plate.

9. The display panel of claim 1, wherein, The wiring area comprises a first wiring area and a second wiring area located on opposite sides of the light-transmitting area; the width of the first wiring area in the second direction is different from the width of the second wiring area in the second direction; In the direction perpendicular to the plane of the substrate base plate, the thickness of the second portion of the first wiring area is T2; the maximum height difference between the side surface of the second portion of the first wiring area away from the substrate base plate and the side surface of the second portion of the second wiring area away from the substrate base plate is ΔH1; wherein |ΔH1| / T2 ≤ 5%.

10. The display panel of claim 1, wherein, In the direction perpendicular to the plane of the substrate base plate, the thickness T0 of the first film layer is in the range of 0 μm < T0 ≤ 0.5 μm.

11. A method for manufacturing a display panel, characterized by, The display panel comprises a light-transmitting area, a pixel area and a wiring area; the pixel area is located on one side of the light-transmitting area along a first direction; the wiring area is located on one side of the light-transmitting area along a second direction; the first direction and the second direction intersect; the width of the pixel area in the first direction is different from the width of the wiring area in the second direction. The preparation method of the display panel comprises: providing a substrate base plate; forming a driving circuit layer on one side of the substrate base plate; the driving circuit layer comprises a thin film transistor; the thin film transistor is located in the pixel area; forming a black pixel definition layer on the side of the driving circuit layer away from the substrate base plate; forming a first film layer on the side of the black pixel definition layer away from the substrate base plate; the first film layer comprises a first opening located in the light-transmitting area, a first portion located in the pixel area and a second portion located in the wiring area; in the direction perpendicular to the plane of the substrate base plate, the thickness of the first portion is H1; the height difference between the surface of the first portion away from the substrate base plate and the surface of the second portion away from the substrate base plate is ΔH; wherein |ΔH| / H1 ≤ 5%.

12. The method of manufacturing a display panel according to claim 11, wherein, forming a first film layer on the side of the black pixel definition layer away from the substrate base plate, comprising: forming a material layer of the first film layer on the side of the black pixel definition layer away from the substrate base plate; The material layer of the first film layer is patterned by using the first mask plate to remove the material layer of the first film layer located in the light-transmitting area to form a first opening, and to remove the material layer of the first film layer located in part of the pixel area and / or part of the wiring area to form the first part and the second part respectively.

13. The method of manufacturing a display panel according to claim 12, wherein The first mask plate comprises a first area, a second area and a third area; the first area corresponds to the pixel area, the second area corresponds to the wiring area, and the third area corresponds to the light-transmitting area; The light transmittance of the third area is greater than the light transmittance of the first area and the light transmittance of the second area; The width of the pixel area in the first direction is greater than the width of the wiring area in the second direction, and the light transmittance of at least part of the first area is greater than the light transmittance of the second area; or the width of the pixel area in the first direction is less than the width of the wiring area in the second direction, and the light transmittance of at least part of the first area is less than the light transmittance of the second area.

14. The method of manufacturing a display panel according to claim 13, wherein, The wiring area comprises a first wiring area and a second wiring area located on opposite sides of the light-transmitting area; In the second direction, the width of the first wiring area is greater than the width of the second wiring area, and the light transmittance of at least part of the second area corresponding to the first wiring area is greater than the light transmittance of the second area corresponding to the second wiring area.

15. The method of manufacturing a display panel according to claim 13, wherein, The black pixel definition layer comprises a second opening located in the light-transmitting area, a third part located in the pixel area and a fourth part located in the wiring area; When the material layer of the first film layer is patterned by using the first mask plate, in the direction perpendicular to the plane where the substrate is located, the first area overlaps with the third part, the second area overlaps with the fourth part, and the third area overlaps with the second opening.

16. The method of producing a display panel according to claim 15, wherein The edge of the third part located in the pixel area closest to one side of the light-transmitting area is a third edge; and the edge of the first area closest to one side of the third area is a fifth edge; The shortest distance between the fifth edge and the third edge corresponding to the same light-transmitting area in the overlapping first area and third part is ΔL; wherein 2.8 μm ≤ ΔL ≤ 3.5 μm.

17. The method of producing a display panel according to claim 15, wherein The driving circuit layer further comprises a light-transmitting hole located in the light-transmitting area; the third part comprises a first sub-part and a second sub-part connected to each other; the second sub-part is located between the first sub-part and the light-transmitting hole; the distance between at least part of the second sub-part and the substrate is less than the distance between the first sub-part and the substrate; When the material layer of the first film layer is patterned by using the first mask plate, in the direction perpendicular to the plane where the substrate is located, the first area at least covers the first sub-part.

18. The method of producing a display panel according to claim 17, wherein When the material layer of the first film layer is patterned by using the first mask plate, in the direction perpendicular to the plane where the substrate is located, the first area further covers the second sub-part.

19. The method of manufacturing a display panel according to claim 17, wherein, The first mask plate further comprises a fourth area; the fourth area is located between the first area and the third area; In the patterning of the material layer of the first film layer by using the first mask plate, the fourth region covers the second sub-portion in a direction perpendicular to a plane in which the substrate is located. The light transmittance of the fourth region is less than the light transmittance of the first region.

20. The method of manufacturing a display panel according to claim 16, wherein, The black pixel definition layer further comprises a first pixel opening. The first mask plate further comprises a fifth region; and the first region surrounds the fifth region. In the patterning of the material layer of the first film layer by using the first mask plate, the fifth region overlaps the first pixel opening in a direction perpendicular to a plane in which the substrate is located. The light transmittance of the fifth region is greater than the light transmittance of the first region and the light transmittance of the second region.

21. The method of producing a display panel according to claim 20, wherein In the patterning of the material layer of the first film layer by using the first mask plate, the first region overlaps part of the first pixel opening in a direction perpendicular to a plane in which the substrate is located.

22. The method of manufacturing a display panel according to claim 20, wherein, A driving circuit layer is formed on one side of the substrate, comprising: A thin film transistor is formed on one side of the substrate. A connection electrode is formed on a side of the thin film transistor away from the substrate; at least part of the connection electrode is electrically connected to the thin film transistor through a via hole.

23. The method of producing a display panel according to claim 22, wherein After the black pixel definition layer is formed, the connection electrode is located at least within the first pixel opening. After the first film layer is formed on a side of the black pixel definition layer away from the substrate, further comprising: A sacrificial layer is formed on a side of the first film layer away from the substrate. The sacrificial layer is patterned to form a mask opening in the sacrificial layer; in a direction from the substrate to the sacrificial layer, the width of the mask opening gradually decreases; and in a direction perpendicular to a plane in which the substrate is located, the mask opening overlaps the first pixel opening. A eutectic layer is formed on a side of the connection electrode away from the substrate by using the sacrificial layer as a mask. After the eutectic layer is formed, the sacrificial layer is peeled off. A light emitting element is provided and is bonded to the connection electrode through the eutectic layer.

24. A display device comprising: Comprising: The display panel of any one of claims 1-10.

Images