Overvoltage protection components

Abstract

This disclosure provides an overvoltage protection element. The overvoltage protection element includes a substrate and a stacked structure disposed on the substrate. The stacked structure includes a first insulating structure, a second insulating structure, and a conductor layer. The conductor layer is disposed on the first insulating structure, and the second insulating structure is disposed on the conductor layer. The second insulating structure has an insulating air gap, the upper end of which is wider than the lower end.

Description

Technical Field

[0001] This disclosure relates to an overvoltage protection element, and more particularly to an overvoltage protection element employing air discharge technology. Background Technology

[0002] If an abnormal voltage or electrostatic discharge (ESD) occurs during the operation of an electronic circuit, the electronic components on the circuit may be damaged. Therefore, overvoltage protectors are often installed in electronic circuits to protect the electronic components from the effects of abnormal voltage or electrostatic discharge.

[0003] With the advancement of modern electronic products and the improvement of manufacturing technology, the size of electronic products is gradually shrinking, making the damage caused by electrostatic discharge (ESD) to precision electronic components increasingly severe. Furthermore, the rapid development of handheld mobile devices in recent years has led to a growing demand for ESD protection. Among the methods currently used for ESD protection, air discharge is the most common.

[0004] The above description of "prior art" provides background information only and does not acknowledge that the subject matter of this disclosure is disclosed. It does not constitute prior art of this disclosure, and no description of "prior art" above should be considered as part of the "prior art" of this invention. Summary of the Invention

[0005] One embodiment of this disclosure provides an overvoltage protection element. The overvoltage protection element includes a substrate and a stacked structure disposed on the substrate. The stacked structure includes a first insulating structure, a second insulating structure, and a conductor layer. The conductor layer is disposed on the first insulating structure, and the second insulating structure is disposed on the conductor layer. The second insulating structure has an insulating air gap, the upper end of which is wider than the lower end.

[0006] In some embodiments, the thickness of the second insulating structure is greater than the thickness of the first insulating structure.

[0007] In some embodiments, the first insulating structure has a lower air gap that is connected to the insulating air gap.

[0008] In some embodiments, the first insulating structure has a lower air gap, the width of which is smaller than the width of the lower end of the insulating air gap.

[0009] In some embodiments, the conductor layer has a conductor layer air gap, the width of which is smaller than the width of the lower end of the insulating air gap.

[0010] In some embodiments, the first insulating structure has a lower air gap, the conductor layer has a conductor layer air gap, and the width of the lower air gap is greater than the width of the conductor layer air gap.

[0011] In some embodiments, the second insulating structure includes: a lower portion having a lower opening; an upper portion disposed above the lower portion having an upper opening; and a top cover portion disposed above the upper portion; wherein the lower opening communicates with the upper opening, and the top cover portion seals the upper end of the insulating air gap.

[0012] In some embodiments, the second insulating structure includes: a lower portion having a lower opening; an upper portion disposed above the lower portion having an upper opening; a top cover portion disposed above the upper portion; a first conductive material portion located at the lower opening; and a second conductive material portion located at the lower surface of the top cover portion; wherein the first conductive material portion and the second conductive material portion are separate from each other.

[0013] In some embodiments, the second insulating structure includes: a lower portion having a lower opening; an upper portion disposed above the lower portion having an upper opening; a top cover portion disposed above the upper portion; a first conductive material portion located at the lower opening; and a second conductive material portion located at the lower surface of the top cover portion; wherein the thickness of the second conductive material portion is less than the thickness of the upper portion.

[0014] Another embodiment of this disclosure provides an overvoltage protection element, comprising: a substrate; a conductor layer disposed on the substrate; and an insulating structure disposed on the conductor layer; wherein the insulating structure has an insulating air gap, the upper end of the insulating air gap being wider than the lower end.

[0015] In some embodiments, the substrate has a groove, and the height of the insulating air gap is greater than the height of the groove.

[0016] In some embodiments, the substrate has a groove that communicates with the insulating air gap.

[0017] In some embodiments, the substrate has a groove whose width is smaller than the width of the lower end of the insulating air gap.

[0018] In some embodiments, the conductor layer has a conductor layer air gap, the width of which is smaller than the width of the lower end of the insulating air gap.

[0019] In some embodiments, the substrate has a groove, the conductor layer has a conductor layer air gap, and the width of the groove is greater than the width of the conductor layer air gap.

[0020] In some embodiments, the insulating structure includes: a lower portion; an upper portion disposed on the lower portion; and a top cover portion disposed on the upper portion.

[0021] In some embodiments, the insulating structure includes: a lower portion having a lower opening; an upper portion disposed above the lower portion having an upper opening; and a top cover portion disposed above the upper portion; wherein the lower opening communicates with the upper opening, and the top cover portion seals the upper end of the insulating air gap.

[0022] In some embodiments, the insulating structure includes: a lower portion having a lower opening; an upper portion disposed above the lower portion having an upper opening; a top cover portion disposed above the upper portion; a first conductive material portion located at the lower opening; and a second conductive material portion located at the lower surface of the top cover portion; wherein the first conductive material portion is separate from each other.

[0023] In some embodiments, the insulating structure includes: a lower portion having a lower opening; an upper portion disposed above the lower portion having an upper opening; a top cover portion disposed above the upper portion; a first conductive material portion located at the lower opening; and a second conductive material portion located at the lower surface of the top cover portion; wherein the thickness of the first conductive material portion is less than the thickness of the lower portion, and the thickness of the second conductive material portion is less than the thickness of the upper portion.

[0024] The technical features and advantages of this disclosure have been summarized quite extensively above to provide a better understanding of the detailed description of this disclosure that follows. Other technical features and advantages constituting the subject matter of the claims will be described below. Those skilled in the art to which this disclosure pertains will understand that the concepts and specific embodiments disclosed below can be readily utilized to achieve the same purpose as this disclosure through modifications or design of other structures or processes. Those skilled in the art will also understand that such equivalent constructions cannot depart from the spirit and scope of this disclosure as defined by the appended claims. Attached Figure Description

[0025] The disclosure of the present invention can be more fully understood by referring to the accompanying drawings in conjunction with the embodiments and claims, wherein the same element symbols in the drawings refer to the same elements.

[0026] Figure 1 An overvoltage protection element according to an embodiment of the present disclosure is illustrated;

[0027] Figures 2 to 13 This invention illustrates a method for preparing an overvoltage protection element according to an embodiment of the present disclosure;

[0028] Figure 14 An overvoltage protection element according to another embodiment of this disclosure is illustrated; and

[0029] Figures 15 to 25 An example of a method for preparing an overvoltage protection element according to another embodiment of this disclosure is provided.

[0030] The attached figures are labeled as follows:

[0031] 10: Overvoltage protection components

[0032] 11:Substrate

[0033] 13: First insulation structure

[0034] 13A: Lower air gap

[0035] 13B: Reserved Area

[0036] 14: Seed Crystal Layer

[0037] 15: Conductor layer

[0038] 15A: First electrode

[0039] 15B: Second electrode

[0040] 15C: Air gap in conductor layer

[0041] 16: Photoresist layer

[0042] 16A: Reservation Area

[0043] 16B: Photoresist pattern

[0044] 17A:lower part

[0045] 17B: Upper part

[0046] 17A1: Lower opening

[0047] 17B1: Upper opening

[0048] 18: Photoresist layer

[0049] 18A: Reservation Area

[0050] 18B: Photoresist pattern

[0051] 18C: Photoresist pattern

[0052] 19: Top cover

[0053] 20: Stacked structure

[0054] 23: Second insulation structure

[0055] 23A: Insulation air gap

[0056] 30A: First Conductive Material Division

[0057] 30B: Second Conductive Material Section

[0058] 181: Photoresist layer

[0059] 181A: Reservation Area

[0060] 60: Overvoltage protection components

[0061] 61:Substrate

[0062] 13: First insulation structure

[0063] 61A: Groove

[0064] 64: Seed Crystal Layer

[0065] 65: Conductor layer

[0066] 65A: First electrode

[0067] 65B: Second electrode

[0068] 65C: Air gap in conductor layer

[0069] 66: Photoresist layer

[0070] 66A: Reservation Area

[0071] 66B: Photoresist pattern

[0072] 67A: Lower part

[0073] 67B: Upper part

[0074] 67A1: Lower opening

[0075] 67B1: Upper opening

[0076] 68: Photoresist layer

[0077] 68A: Reservation Area

[0078] 68B: Photoresist pattern

[0079] 68C: Photoresist pattern

[0080] 69: Top Cover

[0081] 73: Second insulation structure

[0082] 73A: Insulation air gap

[0083] 80A: First Conductive Material Division

[0084] 80B: Second Conductive Material Section

[0085] 681: Photoresist layer

[0086] 681A: Reservation Area

[0087] H1: Height

[0088] H2: Height

[0089] T1: Thickness

[0090] T2: Thickness

[0091] T3: Thickness

[0092] T4: Thickness

[0093] T5: Thickness

[0094] T6: Thickness

[0095] W1: Width

[0096] W2: Width

[0097] W3: Width

[0098] W4: Width

[0099] W5: Width

[0100] W6: Width

[0101] W7: Width

[0102] W8: Width Detailed Implementation

[0103] The following description of this disclosure, accompanied by the accompanying drawings which are incorporated in and form a part of this specification, illustrates embodiments of this disclosure; however, this disclosure is not limited to these embodiments. Furthermore, the following embodiments may be appropriately integrated to complete another embodiment.

[0104] Terms such as “an embodiment,” “an embodiment,” “an exemplary embodiment,” “another embodiment,” and “another embodiment” indicate that the embodiments described in this disclosure may include specific features, structures, or characteristics; however, not every embodiment must include that specific feature, structure, or characteristic. Furthermore, repeated use of the phrase “in an embodiment” does not necessarily refer to the same embodiment, but may refer to the same embodiment.

[0105] To enable a full understanding of this disclosure, the following description provides detailed steps and structures. It is obvious that implementation of this disclosure does not limit the specific details known to those skilled in the art. Furthermore, known structures and steps are not detailed further to avoid unnecessarily limiting this disclosure. Preferred embodiments of this disclosure are detailed below. However, in addition to the detailed description, this disclosure can also be widely implemented in other embodiments. The scope of this disclosure is not limited to the detailed description, but is defined by the claims.

[0106] Figure 1An overvoltage protection element 10 according to an embodiment of the present disclosure is illustrated. In one embodiment, the overvoltage protection element 10 includes a substrate 11 and a stacked structure 20. The stacked structure 20 is disposed on the substrate 11 and includes a first insulating structure 13, a second insulating structure 23, and a conductor layer 15, wherein the conductor layer 15 is disposed on the first insulating structure 13, and the second insulating structure 23 is disposed on the conductor layer 15. In one embodiment, the second insulating structure 23 has an insulating air gap 23A, the upper end width W1 of which is greater than the lower end width W2. In one embodiment, the insulating air gap 23A has a trapezoidal profile. In one embodiment, the thickness T2 of the second insulating structure 23 is greater than the thickness T1 of the first insulating structure 13.

[0107] In one embodiment, the first insulating structure 13 has a lower air gap 13A communicating with an insulating air gap 23A; the width W3 of the lower air gap 13A is smaller than the lower end width W2 of the insulating air gap 23A. In one embodiment, the conductor layer 15 has a first electrode 15A and a second electrode 15B, which form a discharge path; the conductor layer 15 has a conductor layer air gap 15C located between the first electrode 15A and the second electrode 15B, and the width W4 of the conductor layer air gap 15C is smaller than the lower end width W2 of the insulating air gap 23A. In one embodiment, the width W3 of the lower air gap 13A is greater than the width W4 of the conductor layer air gap 15C. In one embodiment, the width W4 of the conductor layer air gap 15C is greater than or equal to the lower end width W2 of the insulating air gap 23A.

[0108] In one embodiment, the second insulating structure 23 includes a lower portion 17A, an upper portion 17B, and a top cover portion 19. The upper portion 17B is disposed above the lower portion 17A, and the top cover portion 19 is disposed above the upper portion 17B. In one embodiment, the lower portion 17A has a lower opening 17A1, and the upper portion 17B has an upper opening 17B1. The lower opening 17A and the upper opening 17B are connected to form an insulating air gap 23A, and the top cover portion 19 seals the upper end of the insulating air gap 23A.

[0109] In one embodiment, the substrate 11 comprises alumina or ceramic material, the first insulating structure 13 comprises polyimide, the conductor layer 15 comprises copper, the lower portion 17A and the upper portion 17B comprise epoxy resin or polyimide, and the top cover portion 19 comprises epoxy resin or polyimide. In one embodiment, to prevent substances from the external environment from falling between the first electrode 15A and the second electrode 15B, causing a short circuit between the first electrode 15A and the second electrode 15B, the top cover layer 19 of the overvoltage protection element 1 is configured to isolate the conductor layer 15 from the external environment. In one embodiment, the lower portion 17A and the upper portion 17B isolate the top cover layer 19 from the conductor layer 15, and the insulating air gap 23A and the lower air gap 13A also provide additional space through which the first tip and the second tip can discharge.

[0110] Figures 2 to 13 An example of the fabrication method of an overvoltage protection element 10 according to an embodiment of this disclosure is provided. (See reference...) Figure 2 In one embodiment, a first insulating structure 13 (e.g., a photosensitive polyimide layer) is first formed on a substrate 11 (e.g., an alumina substrate or a ceramic substrate), and an exposure process is performed on a predetermined area 13B of the first insulating structure 13, followed by a development process to locally remove the predetermined area 13B to form an air gap 13A within the first insulating structure 13. Figure 3 As shown.

[0111] refer to Figure 4 A sputtering process is performed to form a seed layer 14 (e.g., a titanium-tungsten alloy layer, a copper layer, or a nickel-chromium alloy layer) on the first insulating structure 13 and the substrate 11. A coating process is then performed to form a photoresist layer 16 on the seed layer 14. A predetermined area 16A of the photoresist layer 16 is then exposed. Afterwards, a development process is performed to partially remove the predetermined area 16A to form a photoresist pattern 16B that fills the lower air gap 13A and protrudes from the first insulating structure 13. Figure 5 As shown. In one embodiment, the photoresist pattern 16B has a cross-section that is narrower at the top and wider at the bottom.

[0112] refer to Figure 6 An electroplating process is performed to form a conductor layer 15 on the first insulating structure 13. A photoresist pattern 16B separates the conductor layer 15 to form a first electrode 15A and a second electrode 15B. Afterwards, the photoresist pattern 16B is removed, thereby forming a discharge path between the first electrode 15A and the second electrode 15B, with the lower air gap 13A located below the discharge path. Figure 7 As shown. In Figure 6 and Figure 7 In the figure, the seed layer 14 has been incorporated into the conductor layer 15 and is not shown. In one embodiment, since the photoresist pattern 16B has a cross-section that is narrow at the top and wide at the bottom, the cross-section of the first electrode 15A has a first tip, and the cross-section of the second electrode 15B has a second tip, and the first tip and the second tip are disposed above the lower air gap 13A.

[0113] refer to Figure 8 A coating process is performed to form a photoresist layer 18 on the conductor layer 15. An exposure process is then performed on a predetermined area 18A of the photoresist layer 18, followed by a development process to partially remove the photoresist layer 18 in the predetermined area 18A, forming a photoresist pattern 18B. Subsequently, using the photoresist pattern 18B, a lower portion 17A is formed on the conductor layer 15, as shown below. Figure 9 As shown.

[0114] refer to Figure 10A coating process is performed to form a photoresist layer 181 on the conductor layer 15 and the lower portion 17A. An exposure process is then performed on a predetermined area 181A of the photoresist layer 181, followed by a development process to partially remove the photoresist layer 181 in the predetermined area 181A, forming a photoresist pattern 18C. The width of the photoresist pattern 18C is greater than the width of the photoresist pattern 18B. Subsequently, using the photoresist pattern 18C, an upper portion 17B is formed on the lower portion 17A, as shown below. Figure 11 As shown.

[0115] refer to Figure 12 The photoresist patterns 18B and 18C are removed to form a lower opening 17A1 within the lower portion 17A and an upper opening 17B1 within the upper portion 17B, forming an insulating air gap 23C that at least partially exposes the first electrode 15A and the second electrode 15B. The cross-sectional width of the insulating air gap 23C is greater than the cross-sectional width of the lower air gap 13A of the first insulating structure 13. Then, a top cover 19 (e.g., a polyimide dry film) is attached to the upper portion 17B to seal the insulating air gap 23A.

[0116] refer to Figure 13 In one embodiment, when a high voltage is applied to the first electrode 15A and the second electrode 15B, the first tip and the second tip discharge through the air between them, which acts like an electric arc discharge, causing electrode debris to be generated on the first electrode 15A and the second electrode 15B. The lower air gap 13A can accommodate the metal debris that falls off during the discharge process, preventing the accumulation of metal debris from causing a short circuit between the first electrode 15A and the second electrode 15B.

[0117] Furthermore, the high temperature of the instantaneous tip discharge between the first tip of the first electrode 15A and the first tip of the second electrode 15B will cause molten metal fragments to splash upwards and adhere to the second insulating structure 23, forming the first conductive material portion 30A in the lower opening 17A1 or the second conductive material portion 30B on the lower surface 19A of the top cover portion 19. The innovative technology of this disclosure designs the width of the upper opening 17B1 to be greater than the width of the lower opening 17A1, that is, to set a dead angle 23B in the upper opening 17B1 of the second insulating structure 23, so that the molten metal fragments cannot splash upwards to the dead angle 23B of the upper opening 17B1; thus, the first conductive material portion 30A and the second conductive material portion 30B formed by the upwardly splashed molten metal fragments are isolated by the dead angle 23A of the upper opening 17B1 of the second insulating structure 23, and cannot form a continuous conductive path, thus avoiding the short circuit between the first electrode 15A and the second electrode 15B caused by the upwardly splashed molten metal fragments. In one embodiment, the thickness T4 of the second conductive material portion 30B is less than the thickness T3 of the upper portion 17B to avoid a short circuit between the first conductive material portion 30A and the second conductive material portion 30B.

[0118] Figure 14 An overvoltage protection element 60 according to another embodiment of the present disclosure is illustrated. In one embodiment, the overvoltage protection element 60 includes an insulating substrate 61, a conductor layer 65, an insulating structure 73, and a top cover layer 69. In this embodiment, the insulating substrate 61 has a groove 61A; the conductor layer 65 is disposed on the insulating substrate 61 and has a first electrode 65A and a second electrode 65B, which form a discharge path, and the groove 61A is located below the discharge path; the insulating structure 73 is disposed on the conductor layer 65 and has an insulating air gap 73A, at least partially exposing the first electrode 65A and the second electrode 65B.

[0119] In one embodiment, the upper width W8 of the insulating air gap 73A is greater than the lower width W6. In one embodiment, the insulating air gap 23A has a trapezoidal profile. In one embodiment, the height H1 of the insulating air gap 73A is greater than the height H2 of the groove 61A, the width W5 of the groove 61A is less than the lower width W6 of the insulating air gap 73A, and the groove 61A is connected to the insulating air gap 73A. In one embodiment, the conductor layer 65 has a conductor layer air gap 65C, the width W7 of the conductor layer air gap 65C is less than the lower width W6 of the insulating air gap 73A, and the width W5 of the groove 61A is greater than the width W7 of the conductor layer air gap 65C. In one embodiment, the width W7 of the conductor layer air gap 65C is greater than or equal to the lower width W6 of the insulating air gap 73A.

[0120] In one embodiment, the insulating structure 73 includes a lower portion 67A, an upper portion 67B, and a top cover portion 69. The upper portion 67B is disposed above the lower portion 67A, and the top cover portion 69 is disposed above the upper portion 67B. In one embodiment, the lower portion 67A has a lower opening 67A1, and the upper portion 67B has an upper opening 37B1. The lower opening 67A1 and the upper opening 37B2 communicate with each other to form an insulating air gap 73A. The top cover portion 69 seals the upper end of the insulating air gap 73A. In one embodiment, the insulating substrate 61 comprises alumina or ceramic material, the conductor layer 65 comprises copper, and the insulating structure 73 comprises epoxy resin or polyimide.

[0121] Figures 15 to 25 A method for fabricating an overvoltage protection element 60 according to another embodiment of this disclosure is illustrated. (See reference...) Figure 15 In one embodiment, a groove 61A is first formed on an upper surface of an insulating substrate 61 (e.g., an alumina substrate or a ceramic substrate). The groove 61A can be formed by engraving the upper surface of the insulating substrate 61 with an infrared laser or an ultraviolet laser.

[0122] refer to Figure 16A sputtering process is performed to form a seed layer 64 (e.g., a titanium-tungsten alloy layer, a copper layer, or a nickel-chromium alloy layer) on an insulating substrate 61. A coating process is then performed to form a photoresist layer 66 on the seed layer 64. A predetermined area 66A of the photoresist layer 66 is then exposed. Afterwards, a development process is performed to partially remove the predetermined area 66A to form a photoresist pattern 66B that fills the groove 61A and protrudes from the insulating substrate 61. Figure 17 As shown. In one embodiment, the photoresist pattern 66B has a cross-section that is narrower at the top and wider at the bottom.

[0123] refer to Figure 18 An electroplating process is performed to form a conductor layer 65 on an insulating substrate 61. A photoresist pattern 66B separates the conductor layer 65 to form a first electrode 65A and a second electrode 65B. Afterwards, the photoresist pattern 66B is removed, thereby forming a discharge path between the first electrode 65A and the second electrode 65B, with a groove 61A located below the discharge path. Figure 19 As shown. In Figure 18 and Figure 19 In the figure, the seed layer 64 is incorporated into the conductor layer 65 and is not shown. In one embodiment, since the photoresist pattern 66B has a cross-section that is narrow at the top and wide at the bottom, the cross-section of the first electrode 65A has a first tip, and the cross-section of the second electrode 65B has a second tip, and the first tip and the second tip are disposed on the groove 61A.

[0124] refer to Figure 20 A coating process is performed to form a photoresist layer 68 on the conductor layer 65. An exposure process is then performed on a predetermined area 68A of the photoresist layer 68, followed by a development process to locally remove the photoresist layer 68 in the predetermined area 68A, forming a photoresist pattern 68B. Subsequently, using the photoresist pattern 68B, a lower part 67A is formed on the conductor layer 15, as shown below. Figure 21 As shown.

[0125] refer to Figure 22 A coating process is performed to form a photoresist layer 681 on the conductor layer 65 and the lower portion 67A. An exposure process is then performed on a predetermined area 681A of the photoresist layer 681, followed by a development process to partially remove the photoresist layer 681 in the predetermined area 681A, forming a photoresist pattern 68C. The width of the photoresist pattern 68C is greater than the width of the photoresist pattern 68B. Subsequently, using the photoresist pattern 68C, an upper portion 67A is formed on top of the lower portion 67A, as shown below. Figure 23 As shown.

[0126] refer to Figure 24The photoresist patterns 68B and 68C are removed to form a lower opening 67A1 within the lower portion 67A and an upper opening 67B1 within the upper portion 67B, forming an insulating gap 73A that at least partially exposes the first electrode 15A and the second electrode 15B. The cross-sectional width of the insulating gap 73A is greater than the cross-sectional width of the groove 61A. Then, a top cover 69 (e.g., a polyimide dry film) is attached to the upper portion 67B to seal the insulating gap 73A.

[0127] refer to Figure 25 In one embodiment, when a high voltage is applied to the first electrode 65A and the second electrode 65B, the first tip and the second tip discharge through the air between them, which acts like an electric arc discharge, causing electrode debris to be generated on the first electrode 65A and the second electrode 65B. The groove 61A of the substrate 61 can accommodate the metal debris that falls off during the discharge process, preventing the accumulation of metal debris from causing a short circuit between the first electrode 15A and the second electrode 15B.

[0128] Furthermore, the high temperature of the instantaneous tip discharge between the first tip of the first electrode 65A and the first tip of the second electrode 65B will cause molten metal fragments to splash upwards and adhere to the insulating structure 73, forming the first conductive material portion 80A in the lower opening 67A1 or the second conductive material portion 80B on the lower surface 69A of the top cover portion 69. The innovative technology of this disclosure designs the width of the upper opening 67B1 to be greater than the width of the lower opening 67A1, that is, a dead angle 73B is set in the upper opening 67B1 of the insulating structure 73, so that the molten metal fragments cannot splash upwards to the dead angle 73B of the upper opening 67B1; thus, the first conductive material portion 80A and the second conductive material portion 80B formed by the upwardly splashed molten metal fragments are isolated by the dead angle 73A of the upper opening 67B1 of the second insulating structure 73, and cannot form a continuous conductive path, thus avoiding the short circuit between the first electrode 65A and the second electrode 65B caused by the upwardly splashed molten metal fragments. In one embodiment, the thickness T6 of the second conductive material portion 80B is less than the thickness T5 of the upper portion 67B to prevent a short circuit between the first conductive material portion 80A and the second conductive material portion 80B.

[0129] One embodiment of this disclosure provides an overvoltage protection element. The overvoltage protection element includes: a substrate; and a stacked structure disposed on the substrate. The stacked structure includes a first insulating structure, a second insulating structure, and a conductor layer, the conductor layer being disposed on the first insulating structure, and the second insulating structure being disposed on the conductor layer. The second insulating structure has an insulating air gap, the upper end of which is wider than the lower end.

[0130] Another embodiment of this disclosure provides an overvoltage protection element, comprising: a substrate; a conductor layer disposed on the substrate; and an insulating structure disposed on the conductor layer; wherein the insulating structure has an insulating air gap, the upper end of the insulating air gap being wider than the lower end. While this disclosure and its advantages have been described in detail, it should be understood that various changes, substitutions, and alternatives may be made without departing from the spirit and scope of this disclosure as defined by the claims. For example, many of the processes described above may be implemented using different methods, and other processes or combinations thereof may be substituted for many of the processes described above.

[0131] Furthermore, the scope of this invention is not limited to the specific embodiments of the processes, machinery, manufacturing, material compositions, means, methods, and steps described in the specification. Those skilled in the art will understand from the disclosure of this document that existing or future processes, machinery, manufacturing, material compositions, means, methods, or steps that have the same function or achieve substantially the same results as the corresponding embodiments described herein can be used according to this disclosure. Accordingly, such processes, machinery, manufacturing, material compositions, means, methods, or steps are included within the scope of the claims of this invention.

Claims

1. An overvoltage protection element, comprising: One substrate; as well as A stacked structure is disposed on the substrate, wherein the stacked structure includes a first insulating structure, a second insulating structure and a conductor layer, the conductor layer is disposed on the first insulating structure and the second insulating structure is disposed on the conductor layer; The second insulating structure has an insulating air gap, the upper end of which is wider than the lower end.

2. The overvoltage protection element as claimed in claim 1, wherein the thickness of the second insulating structure is greater than the thickness of the first insulating structure.

3. The overvoltage protection element as claimed in claim 1, wherein the first insulating structure has a lower air gap, the lower air gap being connected to the insulating air gap.

4. The overvoltage protection element as claimed in claim 1, wherein the first insulating structure has a lower air gap, the width of which is smaller than the width of the lower end of the insulating air gap.

5. The overvoltage protection element as claimed in claim 1, wherein the conductor layer has a conductor layer air gap, the width of which is smaller than the width of the lower end of the insulating air gap.

6. The overvoltage protection element as claimed in claim 1, wherein the first insulating structure has a lower air gap, the conductor layer has a conductor layer air gap, and the width of the lower air gap is greater than the width of the conductor layer air gap.

7. The overvoltage protection element as claimed in claim 1, wherein the second insulation structure comprises: lower part; An upper part, positioned above the lower part; and A cover is provided on the upper part.

8. The overvoltage protection element as claimed in claim 1, wherein the second insulation structure comprises: The lower part has an opening at the lower part; An upper part, disposed above the lower part, the upper part having an upper opening; and A top cover is provided on the upper part; The lower opening is connected to the upper opening, and the top cover seals the upper end of the insulating air gap.

9. The overvoltage protection element as claimed in claim 1, wherein the second insulation structure comprises: The lower part has an opening at the lower part; An upper part is disposed above the lower part, and the upper part has an upper opening; A top cover is provided on the upper part; A first conductive material portion, located at the lower opening; and A second conductive material portion is located on the lower surface of the top cover portion; The first conductive material portion and the second conductive material portion are separated from each other.

10. The overvoltage protection element of claim 1, wherein the second insulation structure comprises: The lower part has an opening at the lower part; An upper part is disposed above the lower part, and the upper part has an upper opening; A top cover is provided on the upper part; A first conductive material portion, located at the lower opening; and A second conductive material portion is located on the lower surface of the top cover portion; The thickness of the second conductive material portion is less than the thickness of the upper portion.

11. An overvoltage protection element, comprising: One substrate; as well as A conductor layer is disposed on the substrate; An insulating structure is disposed on the conductor layer; The insulating structure has an insulating air gap, the upper end of which is wider than the lower end.

12. The overvoltage protection element of claim 11, wherein the substrate has a groove and the height of the insulating air gap is greater than the height of the groove.

13. The overvoltage protection element as claimed in claim 11, wherein the substrate has a groove that communicates with the insulating air gap.

14. The overvoltage protection element of claim 11, wherein the substrate has a groove, the width of which is smaller than the width of the lower end of the insulating air gap.

15. The overvoltage protection element as claimed in claim 11, wherein the conductor layer has a conductor layer air gap, the width of which is smaller than the width of the lower end of the insulating air gap.

16. The overvoltage protection element of claim 11, wherein the substrate has a groove, the conductor layer has a conductor layer air gap, and the width of the groove is smaller than the width of the conductor layer air gap.

17. The overvoltage protection element of claim 11, wherein the insulation structure comprises: lower part; An upper part, positioned above the lower part; and A cover is provided on the upper part.

18. The overvoltage protection element of claim 11, wherein the insulation structure comprises: The lower part has an opening at the lower part; An upper part, disposed above the lower part, the upper part having an upper opening; and A top cover is provided on the upper part; The lower opening is connected to the upper opening, and the top cover seals the upper end of the insulating air gap.

19. The overvoltage protection element of claim 11, wherein the insulation structure comprises: The lower part has an opening at the lower part; An upper part is disposed above the lower part, and the upper part has an upper opening; A top cover is provided on the upper part; A first conductive material portion, located at the lower opening; and A second conductive material portion is located on the lower surface of the top cover portion; The first conductive material portion is separated from the first conductive material portion.

20. The overvoltage protection element of claim 11, wherein the insulation structure comprises: The lower part has an opening at the lower part; An upper part is disposed above the lower part, and the upper part has an upper opening; A top cover is provided on the upper part; A first conductive material portion, located at the lower opening; and A second conductive material portion is located on the lower surface of the top cover portion; The thickness of the first conductive material portion is less than the thickness of the lower portion, and the thickness of the second conductive material portion is less than the thickness of the upper portion.

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