Filter structure and communication device

Abstract

The application provides a filter structure, comprising a current sampling circuit, a voltage sampling circuit, a signal output circuit and a control circuit, wherein the current sampling circuit is connected with the load circuit and the signal output circuit, and is used for collecting the load current of the load circuit; the voltage sampling circuit is connected with the load circuit and the signal output circuit, and is used for collecting the load voltage of the load circuit; the control circuit is connected, and is used for sending an adjusting signal to the control circuit when the load current is greater than a current threshold value, or sending the adjusting signal to the control circuit when the load voltage is greater than a voltage threshold value; the control circuit is connected with the load circuit, and is used for adjusting the load voltage and the load current of the load circuit according to the adjusting signal; the overcurrent or overvoltage protection of the load circuit can be completed based on the current sampling circuit and the voltage sampling circuit; compared with a traditional overcurrent filter structure, the stability is better, and the stable and reliable operation of the load circuit is effectively ensured.

Description

Technical Field

[0001] This application relates to the field of filter circuit technology, and in particular to a filter structure and communication device. Background Technology

[0002] In modern communication systems, higher demands are placed on the out-of-band rejection (OBR) performance of bandpass filters to suppress OBR interference. With increasingly scarce spectrum resources and rising signal quality requirements, there is an urgent need to develop filters with high OBR performance to ensure signal clarity and stability in wireless, radar, and satellite communications. One common method is slot line perturbation.

[0003] However, excessive slot line perturbations can weaken the structural stability of the filter and lead to additional insertion loss in high-frequency applications. Introducing resonators is typically complex, requiring precise control of their parameters to ensure the formation of the desired transmission zeros. Increasing the number of resonators may increase the filter size, affecting the overall integration density. Multilayer designs also introduce increased fabrication complexity and cost, and may present challenges in manufacturing difficulty and assembly precision in practical applications. Therefore, there is an urgent need for a filter structure that can effectively improve out-of-band rejection performance. Utility Model Content

[0004] Based on this, embodiments of this application provide a filter structure that improves out-of-band suppression.

[0005] In one aspect, a filter structure is provided, the filter including a first dual-mode SIW cavity and a second dual-mode SIW cavity;

[0006] The first dual-mode SIW cavity and the second dual-mode SIW cavity are on the same plane; the outer sides of the first dual-mode SIW cavity and the second dual-mode SIW cavity are each provided with a first metal wall composed of multiple metal holes, and the first metal wall has a square structure.

[0007] A metal through-hole wall is provided between the first dual-mode SIW cavity and the second dual-mode SIW cavity; the metal through-hole wall has two openings for cascading the first dual-mode SIW cavity and the second dual-mode SIW cavity;

[0008] The first dual-mode SIW cavity is connected to an input interface, and the second dual-mode SIW cavity is connected to an output interface;

[0009] The first dual-mode SIW cavity and the second dual-mode SIW cavity are centrally symmetrical.

[0010] In one embodiment, a central metal hole is formed at the center of the metal through-hole wall;

[0011] Two openings are respectively located on both sides of the central metal hole;

[0012] The first dual-mode SIW cavity and the second dual-mode SIW cavity are centrally symmetrical around the central metal hole.

[0013] In one embodiment, the width of the opening ranges from 2mm to 3mm.

[0014] In one embodiment, both the first dual-mode SIW cavity and the second dual-mode SIW cavity are provided with micro-perturbation vias;

[0015] The perturbation via of the first dual-mode SIW cavity is located on the side of the first dual-mode SIW cavity away from the input interface and close to the metal via wall;

[0016] The perturbation via of the second dual-mode SIW cavity is located on the side of the second dual-mode SIW cavity away from the output interface and close to the metal via wall.

[0017] In one embodiment, the perturbation vias of the first dual-mode SIW cavity and the perturbation vias of the second dual-mode SIW cavity are centrally symmetrically distributed around the central metal hole.

[0018] The first distance of the micro-perforation via is the same as the second distance of the micro-perforation via; wherein, the first distance is the distance between the metal via and the first metal wall; and the second distance is the distance between the metal via and the metal via wall.

[0019] In one embodiment, the metal hole at the diagonal of the micro-perturbation via of the first dual-mode SIW cavity is turned inward to form a folded via;

[0020] The metal holes at the diagonal of the micro-perturbation vias in the second dual-mode SIW cavity are turned inward to form folded vias.

[0021] In one embodiment, both the input interface and the output interface are provided with a set of L-shaped metal slots; the set of L-shaped metal slots includes two L-shaped metal slots, which are disposed on both sides of the tail end of the input interface or the output interface.

[0022] The L-shaped metal channel includes a horizontal channel and a vertical channel; the horizontal channel is parallel to the center line of the input interface and the output interface; the vertical channel is set perpendicular to the horizontal channel; the vertical channel is set on the side of the horizontal channel away from the input interface or the output interface.

[0023] In one embodiment, for the same set of L-shaped metal channels, the spacing between the two horizontal channels is the same as the width of the corresponding interface; the spacing between the far ends of the two vertical channels ranges from 3mm to 3.5mm.

[0024] The length of the transverse groove ranges from 1mm to 1.5mm.

[0025] In one embodiment, the distance between the metal through-hole wall and the center line of the input interface or the center line of the output interface is in the range of 3mm-4mm.

[0026] In a second aspect, a communication device is provided, wherein the communication device includes the filter structure provided in the first aspect above.

[0027] The beneficial effects of the technical solutions provided in this application include at least the following:

[0028] This invention provides a filter structure comprising a first dual-mode SIW cavity and a second dual-mode SIW cavity. The first and second dual-mode SIW cavities are on the same plane. A first metal wall, consisting of multiple metal vias, is distributed on the outer sides of both cavities; the first metal wall has a square structure. A metal via wall connects the first and second dual-mode SIW cavities; the metal via wall has two openings for cascading the first and second dual-mode SIW cavities. The first dual-mode SIW cavity is connected to an input interface, and the second dual-mode SIW cavity is connected to an output interface. The first and second dual-mode SIW cavities are centrally symmetrical. The first and second dual-mode SIW cavities are cascaded through the two openings in the metal via wall to form a fourth-order SIW filter. Combined with the filter structure of this application, the filter can obtain two pairs of transmission zeros, effectively improving both the frequency selectivity and out-of-band rejection. Attached Figure Description

[0029] Figure 1 This is a schematic diagram of the first filter structure provided in the embodiments of this application;

[0030] Figure 2 This is a schematic diagram of the second filter structure provided in the embodiments of this application;

[0031] Figure 3 This is a schematic diagram of the third filter structure provided in the embodiments of this application;

[0032] Figure 4 This is a schematic diagram of the fourth filter structure provided in the embodiments of this application;

[0033] Figure 5 A topology diagram of the filter structure provided in the embodiments of this application;

[0034] Figure 6 This is a schematic diagram showing the dimensions of the filter structure provided in an embodiment of this application;

[0035] Figure 7 The measurement effect diagram of the filter provided in the embodiment of this application;

[0036] Figure 8 A physical diagram of the filter structure provided in the embodiments of this application.

[0037] Figure label:

[0038] 1. First dual-mode SIW cavity; 11. Input interface; 2. Second dual-mode SIW cavity; 21. Output interface; 3. Metal through-hole wall; 31. Opening; 32. Central metal hole; 4. Micro-disturbance through-hole; 5. Folded through-hole; 6. L-shaped metal groove; 61. Horizontal groove; 62. Vertical groove. Detailed Implementation

[0039] To facilitate understanding of this application, a more complete description will be provided below with reference to the accompanying drawings, which illustrate embodiments of the present application. However, the present application can be implemented in many different forms and is not limited to the embodiments described herein. Rather, these embodiments are provided so that the disclosure of this application will be thorough and complete.

[0040] Unless otherwise defined, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this application belongs. The terminology used herein is for the purpose of describing particular embodiments only and is not intended to be limiting of the application.

[0041] It is understood that the terms "first," "second," etc., used herein may be used to describe various elements, but these elements are not limited by these terms. These terms are only used to distinguish one element from another. For example, without departing from the scope of this application, a first resistor may be referred to as a second resistor, and similarly, a second resistor may be referred to as a first resistor. Both the first resistor and the second resistor are resistors, but they are not the same resistor.

[0042] It is understood that the term "connection" in the following embodiments should be understood as "electrical connection," "communication connection," etc., if the connected circuits, modules, units, etc., have electrical signal or data transmission with each other.

[0043] It is understandable that "at least one" refers to one or more, and "multiple" refers to two or more. "At least a part of an element" refers to part or all of an element.

[0044] When used herein, the singular forms of “a,” “an,” and “ / the” may also include the plural forms unless the context clearly indicates otherwise. It should also be understood that the terms “comprising / including” or “having,” etc., specify the presence of the stated features, wholes, steps, operations, components, parts, or combinations thereof, but do not preclude the possibility of the presence or addition of one or more other features, wholes, steps, operations, components, parts, or combinations thereof. Meanwhile, the term “and / or” as used in this specification includes any and all combinations of the associated listed items.

[0045] In one embodiment, to improve the out-of-band rejection of the filter, such as Figure 1 As shown, a filter structure is provided, the circuit including a first dual-mode SIW cavity 1 and a second dual-mode SIW cavity 2. The first dual-mode SIW cavity 1 and the second dual-mode SIW cavity 2 are on the same plane; a first metal wall composed of multiple metal holes is distributed on the outer side of both the first dual-mode SIW cavity 1 and the second dual-mode SIW cavity 2, the first metal wall having a square structure. A metal through-hole wall 3 is provided between the first dual-mode SIW cavity 1 and the second dual-mode SIW cavity 2; the metal through-hole wall 3 has two openings 31 for cascading the first dual-mode SIW cavity 1 and the second dual-mode SIW cavity 2. The first dual-mode SIW cavity 1 is connected to an input interface 11, and the second dual-mode SIW cavity 2 is connected to an output interface 21. The first dual-mode SIW cavity 1 and the second dual-mode SIW cavity 2 are centrally symmetrical. The dual-mode SIW cavity refers to a resonant cavity structure designed based on substrate integrated waveguide technology, capable of supporting two different electromagnetic field modes. In this application, both the first dual-mode SIW cavity 1 and the second dual-mode SIW cavity 2 are excited by the TE201 and TE102 modes. Figure 1 As shown, the first dual-mode SIW cavity 1 and the second dual-mode SIW cavity 2 of this application are both arranged on the conductor material. A first metal wall is provided on the outer side of both the first dual-mode SIW cavity 1 and the second dual-mode SIW cavity 2. The first metal wall is composed of multiple metal holes, which are formed by drilling holes in the conductor material. The metal through-hole wall 3 is also composed of multiple metal holes.

[0046] In this embodiment, the primary function of the first metal wall is to constrain the electromagnetic field. The function of the through-hole metal wall 3 is to constrain the electromagnetic field and control the mode.

[0047] In this embodiment, the first dual-mode SIW cavity 1 and the second dual-mode SIW cavity 2 are on the same plane. A first metal wall composed of multiple metal holes is distributed on the outer side of both the first dual-mode SIW cavity 1 and the second dual-mode SIW cavity 2. The first metal wall has a square structure. A metal through-hole wall 3 connects the first dual-mode SIW cavity 1 and the second dual-mode SIW cavity 2. The metal through-hole wall 3 has two openings 31 for cascading the first dual-mode SIW cavity 1 and the second dual-mode SIW cavity 2. The first dual-mode SIW cavity 1 is connected to an input interface 11, and the second dual-mode SIW cavity 2 is connected to an output interface 21. The first dual-mode SIW cavity 1 and the second dual-mode SIW cavity 2 are centrally symmetrical. The first dual-mode SIW cavity 1 and the second dual-mode SIW cavity 2 of this application are cascaded through the two openings 31 on the metal through-hole wall 3 to form a fourth-order SIW filter. Combined with the filter structure of this application, the filter can obtain two pairs of transmission zeros, which not only simplifies the structure but also effectively improves the frequency selectivity and out-of-band rejection of the filter.

[0048] In one embodiment, to achieve more flexible mode control of the filter, such as... Figure 2 As shown, in this embodiment, a central metal hole 32 is formed at the center of the metal through-hole wall 3. Two openings 31 are respectively disposed on both sides of the central metal hole 32. The first dual-mode SIW cavity 1 and the second dual-mode SIW cavity 2 are centrally symmetrical around the central metal hole 32. Optionally, the width of the opening 31 is in the range of 2mm-3mm. Preferably, the width of the opening 31 is 2.5mm.

[0049] Based on the above embodiments, in order to make the filter structure more prone to zero-point occurrence, and to make the resonant frequencies of the first dual-mode SIW cavity 1 and the second dual-mode SIW cavity 2 closer in both modes, as follows: Figure 2 As shown, in this embodiment, both the first dual-mode SIW cavity 1 and the second dual-mode SIW cavity 2 are equipped with perturbation vias 4. Specifically, the perturbation via 4 of the first dual-mode SIW cavity 1 is located on the side of the first dual-mode SIW cavity 1 away from the input interface 11 and close to the metal via wall 3. The perturbation via 4 of the second dual-mode SIW cavity 2 is located on the side of the second dual-mode SIW cavity 2 away from the output interface 21 and close to the metal via wall 3.

[0050] In one embodiment, the perturbation vias 4 of the first dual-mode SIW cavity 1 and the perturbation vias 4 of the second dual-mode SIW cavity 2 are centrally symmetrically distributed around the central metal hole 32. The first distance and the second distance of the perturbation vias 4 are the same; wherein the first distance is the distance between the metal via and the first metal wall; and the second distance is the distance between the metal via and the metal via wall 3. Optionally, the distance values ​​of the first and second distances range from 0.5mm to 1.5mm. Preferably, the distance value of the first and second distances is 1mm.

[0051] In this embodiment, a perturbation via 4 is designed at this location. The resonant frequency can be finely adjusted based on the perturbation via 4, and the TE201 and TE102 modes of the first dual-mode SIW cavity 1 and the second dual-mode SIW cavity 2 can be excited simultaneously to form a dual-mode resonance. After dual-mode coupling, a transmission zero point appears.

[0052] Based on the above embodiments, in order to further adjust the resonant frequency and extract the transmission zero, such as... Figure 3As shown, in this embodiment, the metal holes at the diagonal of the perturbation via 4 of the first dual-mode SIW cavity 1 are flipped inward to form folded via 5. Similarly, the metal holes at the diagonal of the perturbation via 4 of the second dual-mode SIW cavity 2 are flipped inward to form folded via 5. The folded via 5 means that the first metal wall is shifted inward at a right angle at this position, making the resonant frequencies of the first dual-mode SIW cavity 1 and the second dual-mode SIW cavity 2 closer in TE201 and TE102 modes, thereby leading to output zeros. Ultimately, the filter structure of this application can have two pairs of output zeros. Optionally, the length of the two right-angled sides formed by the folded via 5 is in the range of 1mm-2mm. Preferably, the length of the two right-angled sides is 1.6mm.

[0053] In one embodiment, in order to achieve impedance matching of the filter structure, thereby optimizing the filter's insertion loss and improving filter performance, such as... Figure 4 As shown, both the input interface 11 and the output interface 21 are provided with a set of L-shaped metal grooves 6; the set of L-shaped metal grooves 6 includes two L-shaped metal grooves 6, which are located on both sides of the tail end of the input interface 11 or the output interface 21. The L-shaped metal groove 6 includes a horizontal groove 61 and a vertical groove 62; the horizontal groove 61 is parallel to the center line of the input interface 11 and the output interface 21; the vertical groove 62 is perpendicular to the horizontal groove 61; the vertical groove 62 is located on the side of the horizontal groove 61 away from the input interface 11 or the output interface 21.

[0054] Optionally, in this embodiment, for the same group of L-shaped metal grooves 6, the spacing between the two horizontal grooves 61 is the same as the width of the corresponding interface; the spacing between the far ends of the two vertical grooves 62 is in the range of 3mm-3.5mm; preferably, the spacing between the far ends of the two vertical grooves 62 is 3.23mm.

[0055] Optionally, in this embodiment, the length of the transverse groove 61 ranges from 1mm to 1.5mm; preferably, the length of the transverse groove 61 is 1.25mm.

[0056] Optionally, in this embodiment, the width of the horizontal groove 61 and the vertical groove 62 is preferably 0.1 mm.

[0057] In this embodiment, the L-shaped metal groove 6 is used to improve the impedance matching of the filter, thereby optimizing the insertion loss of the filter and improving the filter performance.

[0058] In one embodiment, the distance between the metal via wall 3 and the center line of the input interface 11 or the center line of the output interface 21 is in the range of 3mm-4mm; preferably, the distance between the metal via wall 3 and the center line of the input interface 11 or the center line of the output interface 21 is 3.5mm. Based on the offset design between the input / output interface 21 and the metal via wall 3, the performance of the filter can be further improved.

[0059] In one embodiment, a filter structure is provided, as follows:

[0060] The filter includes a first dual-mode SIW cavity 1 and a second dual-mode SIW cavity 2. The first dual-mode SIW cavity 1 and the second dual-mode SIW cavity 2 are on the same plane. A first metal wall composed of multiple metal holes is distributed on the outer side of both the first dual-mode SIW cavity 1 and the second dual-mode SIW cavity 2. The first metal wall has a square structure. A metal through-hole wall 3 connects the first dual-mode SIW cavity 1 and the second dual-mode SIW cavity 2. The metal through-hole wall 3 has two openings 31 for cascading the first dual-mode SIW cavity 1 and the second dual-mode SIW cavity 2. The first dual-mode SIW cavity 1 is connected to an input interface 11, and the second dual-mode SIW cavity 2 is connected to an output interface 21. The first dual-mode SIW cavity 1 and the second dual-mode SIW cavity 2 are centrally symmetrical. A central metal hole 32 is located at the center of the metal through-hole wall 3. The two openings 31 are respectively located on both sides of the central metal hole 32; the first dual-mode SIW cavity 1 and the second dual-mode SIW cavity 2 are centrally symmetrical around the central metal hole 32. The width of the openings 31 ranges from 2mm to 3mm. Both the first dual-mode SIW cavity 1 and the second dual-mode SIW cavity 2 are equipped with micro-perturbation vias 4. The micro-perturbation via 4 of the first dual-mode SIW cavity 1 is located on the side of the first dual-mode SIW cavity 1 away from the input interface 11 and close to the metal via wall 3. The micro-perturbation via 4 of the second dual-mode SIW cavity 2 is located on the side of the second dual-mode SIW cavity 2 away from the output interface 21 and close to the metal via wall 3. The micro-perturbation vias 4 of the first dual-mode SIW cavity 1 and the micro-perturbation via 4 of the second dual-mode SIW cavity 2 are centrally symmetrically distributed around the central metal hole 32. The first distance and the second distance of the micro-perturbation via 4 are the same; wherein, the first distance is the distance between the metal via and the first metal wall; the second distance is the distance between the metal via and the metal via wall 3. The metal holes at the diagonal corners of the micro-perturbation via 4 of the first dual-mode SIW cavity 1 are turned inward to form folded vias 5. The metal holes at the diagonal of the micro-perturbation through-hole 4 in the second dual-mode SIW cavity 2 are turned inward to form a folded through-hole 5. Both the input interface 11 and the output interface 21 are provided with a set of L-shaped metal grooves 6; each set of L-shaped metal grooves 6 includes two L-shaped metal grooves 6, which are located on both sides of the tail end of the input interface 11 or the output interface 21. The L-shaped metal groove 6 includes a horizontal groove 61 and a vertical groove 62; the horizontal groove 61 is parallel to the center line of the input interface 11 and the output interface 21; the vertical groove 62 is perpendicular to the horizontal groove 61; the vertical groove 62 is located on the side of the horizontal groove 61 away from the input interface 11 or the output interface 21. For the same set of L-shaped metal grooves 6, the spacing between the two horizontal grooves 61 is the same as the width of the corresponding interface; the spacing between the distal ends of the two vertical grooves 62 ranges from 3mm to 3.5mm. The length of the horizontal groove 61 ranges from 1mm to 1.5mm. The distance between the metal through-hole wall 3 and the center line of the input interface 11 or the center line of the output interface 21 is 3mm-4mm.

[0061] The implementation and performance of the filter structure in this application will be further explained below, taking into account the specific structural dimensions, topology, and test data:

[0062] The topology diagram of the filter in this application is as follows: Figure 5 As shown, Figure 5 The gray shaded area represents the two modes of a dual-mode SIW cavity. Node N is a non-resonant node, S represents the signal source, and L represents the load. This application provides an additional transmission path. Through the superposition of energy from different coupling paths, a transmission zero is introduced on each side of the filter's passband, thereby improving the filter's selectivity and out-of-band rejection. When the amplitude of the signal transmitted through coupling path SNL is the same as but the phase is opposite to that transmitted through S-1 / 2-3 / 4-L, a transmission zero can be generated according to the principle of energy cancellation. Therefore, this structure can generate two pairs of transmission zeros.

[0063] The preferred dimensions of the filter structure in this embodiment are as follows: Figure 6 As shown, W (i.e., the cavity width of the dual-mode SIW cavity) = 8mm, W11 (i.e., the opening width) = 2.5mm, S (i.e., the distance from the interface centerline to the metal through-hole wall) = 3.5mm, LS (i.e., the distance from the interface to the folded through-hole) = 1.15mm, WS (i.e., the groove width of the horizontal and vertical grooves) = 0.1mm, Win (i.e., the distance between the far ends of the two vertical grooves) = 3.23mm, Offset (i.e., the distance between the first and second distances) = 1mm, t (i.e., the length of the right-angle side of the folded through-hole) = 1.6mm. Figure 7 The simulated and measured responses are displayed. The measured results agree well with the simulated results. The simulated center frequency f0 is 29.3 GHz, and the relative bandwidth (FBW) is 9.38%. The minimum insertion loss is 0.32 dB, and the return loss is better than 22.92 dB. Two TZs are observed in the lower stopband (23.44 GHz and 27.11 GHz) and two more in the upper stopband (31.12 GHz and 35.93 GHz), with suppression better than 20 dB in both cases. The measured center frequency f0 is 29.3 GHz, the minimum insertion loss is 1.4 dB, and the return loss is better than 11 dB. Four TZs were obtained at 24.68 GHz, 27 GHz, 31.06 GHz, and 35.12 GHz, with suppression better than 20 dB. Figure 8 The document also shows a physical schematic diagram of the filter structure. Based on the above, it can be seen that the filter structure of this application is not only simple in structure, but also has two pairs of transmission zeros, effectively improving the frequency selectivity and out-of-band rejection of the filter.

[0064] In one embodiment, a communication device is provided, wherein the communication device includes the filter structure provided in any of the above embodiments.

[0065] The technical features of the above embodiments can be combined in any way. For the sake of brevity, not all possible combinations of the technical features in the above embodiments are described. However, as long as there is no contradiction in the combination of these technical features, they should be considered to be within the scope of this specification.

[0066] The above embodiments merely illustrate several implementation methods of this application, and while the descriptions are relatively specific and detailed, they should not be construed as limiting the scope of the patent application. It should be noted that those skilled in the art can make various modifications and improvements without departing from the concept of this application, and these all fall within the protection scope of this application. Therefore, the protection scope of this patent application should be determined by the appended claims.

Claims

1. A filter structure, characterized in that, Includes a first dual-mode substrate integrated waveguide SIW cavity and a second dual-mode SIW cavity; The first dual-mode SIW cavity and the second dual-mode SIW cavity are on the same plane; the outer sides of the first dual-mode SIW cavity and the second dual-mode SIW cavity are each provided with a first metal wall composed of multiple metal holes, and the first metal wall has a square structure. A metal through-hole wall is provided between the first dual-mode SIW cavity and the second dual-mode SIW cavity; the metal through-hole wall has two openings for realizing the cascading of the first dual-mode SIW cavity and the second dual-mode SIW cavity; The first dual-mode SIW cavity is connected to an input interface, and the second dual-mode SIW cavity is connected to an output interface; The first dual-mode SIW cavity and the second dual-mode SIW cavity are centrally symmetrical.

2. The filter structure according to claim 1, characterized in that, The metal through-hole wall has a central metal hole at its center; The two openings are respectively located on both sides of the central metal hole; The first dual-mode SIW cavity and the second dual-mode SIW cavity are centrally symmetrical around the central metal hole.

3. The filter structure according to claim 2, characterized in that, The width of the opening is in the range of 2mm-3mm.

4. The filter structure according to claim 2, characterized in that, Both the first dual-mode SIW cavity and the second dual-mode SIW cavity are provided with micro-perturbation vias; The perturbation via of the first dual-mode SIW cavity is located on the side of the first dual-mode SIW cavity away from the input interface and close to the metal via wall; The perturbation via of the second dual-mode SIW cavity is located on the side of the second dual-mode SIW cavity away from the output interface and close to the metal via wall.

5. The filter structure according to claim 4, characterized in that, The perturbation vias of the first dual-mode SIW cavity and the perturbation vias of the second dual-mode SIW cavity are centrally symmetrically distributed around the central metal hole; The first distance of the micro-perforation via is the same as the second distance of the micro-perforation via; wherein, the first distance is the distance between the metal via and the first metal wall; and the second distance is the distance between the metal via and the metal via wall.

6. The filter structure according to claim 4, characterized in that, The metal holes at the diagonal of the micro-perturbation vias of the first dual-mode SIW cavity are turned inward to form folded vias; The metal holes at the diagonal of the micro-perturbation vias of the second dual-mode SIW cavity are turned inward to form folded vias.

7. The filter structure according to claim 4, characterized in that, Both the input interface and the output interface are provided with a set of L-shaped metal slots; the set of L-shaped metal slots includes two L-shaped metal slots, which are located on both sides of the tail end of the input interface or the output interface. The L-shaped metal channel includes a horizontal channel and a vertical channel; the horizontal channel is parallel to the center line of the input interface and the output interface; the vertical channel is perpendicular to the horizontal channel; the vertical channel is located on the side of the horizontal channel away from the input interface or the output interface.

8. The filter structure according to claim 7, characterized in that, For the same set of L-shaped metal channels, the spacing between the two horizontal channels is the same as the width of the corresponding interface; the spacing between the far ends of the two vertical channels ranges from 3mm to 3.5mm. The length of the transverse groove ranges from 1mm to 1.5mm.

9. The filter structure according to claim 1, characterized in that, The distance between the metal through-hole wall and the center line of the input interface or the center line of the output interface is 3mm-4mm.

10. A communication device, characterized in that, The filter structure includes any one of claims 1-9.

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