Display device and manufacturing method thereof

Abstract

The display device (30) includes: a plurality of island-shaped first electrodes (22); a first light-emitting layer (26R) including a first light-emitting material and a resin formed by overlapping a part of the plurality of first electrodes (22); a second light-emitting layer (26B) including a second light-emitting material formed by overlapping another part of the plurality of first electrodes (22); and a bank (24) formed in a frame shape or including two opposing partition walls that divide an inner region and an outer region. The second light-emitting layer (26B) is disposed inside the bank (24) in contact with the inner side surface of the bank (24), and the first light-emitting layer (26R) is disposed outside the bank (24).

Description

Technical Field

[0001] The present disclosure relates to a display device and a method for manufacturing a display device. Background Art

[0002] In recent years, various display devices equipped with light-emitting elements have been developed. In particular, display devices equipped with QLED (Quantum dot Light Emitting Diode) or OLED (Organic Light Emitting Diode) can achieve low power consumption, thinness, and high image quality, and thus have attracted much attention.

[0003] However, for example, in the case of a display device equipped with an OLED, when all the light-emitting layers are formed by a vapor deposition method, time, cost, etc. are consumed in the process of forming the light-emitting layer, so the light-emitting layer cannot be formed efficiently. Therefore, an active effort is being made to develop a method for forming the light-emitting layer of a display device equipped with a QLED or an OLED.

[0004] For example, in Patent Document 1 below, it is described that in order to efficiently form a light-emitting layer, only an inkjet method (ink droplet dropping method) is used to form the light-emitting layer of the light-emitting element included in the display device.

[0005] Prior Art Documents

[0006] Patent Documents

[0007] Patent Document 1: Japanese Published Patent Gazette "Japanese Unexamined Patent Application Publication No. 2004-198486" (published on July 15, 2004) Summary of the Invention

[0008] Technical Problem to be Solved by the Invention

[0009] In Patent Document 1 above, it is described that only an inkjet method is used to form the light-emitting layers of each color included in all the sub-pixels constituting one pixel. In the configuration described in Patent Document 1, since all the light-emitting layers are formed by the inkjet method, the light-emitting layer can be effectively formed, but it is necessary to have dams (partition walls) with a relatively high height in all the sub-pixels. Since the dams are formed with a relatively wide width corresponding to the high height, the area of the island-shaped electrodes included in each sub-pixel covered by the dams increases. Therefore, in all the sub-pixels, there is a problem that the light-emitting area of the light-emitting layer becomes narrow.

[0010] One aspect of the present disclosure is made in view of the above problems, and an object thereof is to provide a display device and a method for manufacturing a display device in which the light-emitting area of the light-emitting layer is enlarged.

[0011] Solution to the Problem

[0012] In order to solve the above problems, the display device of the present invention includes:

[0013] A substrate;

[0014] A plurality of island-shaped first electrodes formed on one side surface of the substrate;

[0015] A first light-emitting layer, including a first light-emitting material and a resin, and formed on the one side surface in a manner overlapping with a part of the plurality of first electrodes;

[0016] A second light-emitting layer, which is composed of a second light-emitting material and formed on the one side surface in a manner overlapping with another part of the plurality of first electrodes;

[0017] A first bank, formed in a frame shape or including two opposite partition walls dividing an inner region and an outer region,

[0018] The second light-emitting layer is disposed inside the first bank in a manner contacting the inner side surface of the first bank,

[0019] The first light-emitting layer is disposed outside the first bank.

[0020] In order to solve the above problems, the manufacturing method of the display device of the present invention includes: a first light-emitting layer forming step of forming a first light-emitting layer on a plurality of first regions on one side surface of a substrate based on a photolithography method;

[0021] A second light-emitting layer forming step, after the first light-emitting layer forming step, forming a second light-emitting layer only on a plurality of second regions on the one side surface different from the plurality of first regions without forming a second light-emitting layer on the plurality of first regions.

[0022] According to one aspect of the present disclosure, since the first light-emitting layer is disposed outside the first bank or is disposed by a photolithography method that does not require a bank, it is possible to provide a display device and a manufacturing method of a display device in which the light-emitting region of the first light-emitting layer is enlarged. BRIEF DESCRIPTION OF THE DRAWINGS

[0023] Figure 1 (a) to (f) in are diagrams showing a part of the manufacturing process of the display device according to the first embodiment.

[0024] Figure 2 is a diagram showing an example of an active substrate included in the display device according to the first embodiment.

[0025] Figure 3 Among them, (a) is a top view of a pixel of the display device according to the first embodiment, and (b) is Figure 3Cross-sectional view of the display device of the first embodiment shown in (a) taken along line A-A'.

[0026] Figure 4 Among them, (a) is a diagram showing a first modification of the display device of the first embodiment, and (b) is a diagram showing a second modification of the display device of the first embodiment.

[0027] Figure 5 Among them, (a) is a diagram showing a third modification of the display device of the first embodiment, and (b) is a diagram showing a fourth modification of the display device of the first embodiment.

[0028] Figure 6 Among them, (a) is a diagram showing a fifth modification of the display device of the first embodiment, and (b) is a diagram showing a sixth modification of the display device of the first embodiment.

[0029] Figure 7 Among them, (a) represents Figure 5 A diagram of a third modification of the display device of the first embodiment shown in (a), (b) is a diagram of a seventh modification of the display device of the first embodiment, and (c) is a diagram of an eighth modification of the display device of the first embodiment. Figure 8 (a) to (c) of represent Figure 7 A diagram of a part of the manufacturing process of the eighth modification of the display device of the first embodiment illustrated in (c).

[0030] Figure 9 (a) to (c) of represent a part of the manufacturing process of the display device of the second embodiment.

[0031] Figure 10 Among them, (a) is a diagram showing a first modification of the display device of the second embodiment, and (b) is a diagram showing a second modification of the display device of the second embodiment.

[0032] Figure 11 (a) and (b) are diagrams for explaining the schematic configuration of the display device of the third embodiment, (c) is a diagram showing a first modification of the display device of the third embodiment, and (d) is a diagram showing a second modification of the display device of the third embodiment.

[0033] Figure 12 Among them, (a) is a top view of the display device of the fourth embodiment, and (b) is Figure 12 Cross-sectional view of the display device of the fourth embodiment shown in (a) taken along line B-B'.

[0034] Figure 13 (a) and (b) of represent Figure 12A plan view of a schematic configuration of a mask used in a manufacturing process of a display device according to the fourth embodiment shown in (a) thereof.

[0035] Figure 14 (a) and (b) of are diagrams showing a part of a manufacturing process of a display device according to the fifth embodiment, and (c) is a plan view of one pixel of the display device according to the fifth embodiment.

[0036] Figure 15 (a) to (f) of are diagrams showing a part of a manufacturing process of a display device according to the sixth embodiment. Detailed Embodiments

[0037] Based on Figures 1 to 15 Embodiments of the present disclosure will be described as follows. Hereinafter, for the sake of convenience, components having the same functions as those described in specific embodiments may be denoted by the same reference numerals, and their descriptions may be omitted.

[0038] [First Embodiment]

[0039] Figure 2 is a diagram showing an example of an active substrate 11 included in a display device 30 according to the first embodiment.

[0040] As Figure 2 shown, the active substrate 11 included in the display device 30 according to the first embodiment includes a substrate 10, and on the substrate 10, a resin film 12, a barrier layer 3, a thin film transistor layer 4, and a first electrode 22 are provided in this order from the substrate 10 side.

[0041] As the substrate 10, a substrate having heat resistance capable of withstanding the process temperature of subsequent processes for forming various films can be used, and for example, a glass substrate or the like can be used.

[0042] As the resin film 12, for example, polyimide resin, epoxy resin, polyamide resin, or the like can be used.

[0043] The barrier layer 3 is a layer that prevents moisture and impurities from reaching the transistors TR1, TR2, and the light-emitting element, and can be formed of, for example, a silicon oxide film, a silicon nitride film, or a silicon oxynitride film formed by CVD, or a stacked film thereof.

[0044] The transistors TR1 and TR2 and the capacitive element are disposed on the upper layer of the barrier layer 3. The thin film transistor layer 4 including the transistors TR1 and TR2 and the capacitive element includes: a semiconductor film 15; an inorganic insulating film (gate insulating film) 16 on a layer above the semiconductor film 15; a gate electrode GE and a capacitive electrode GE' on a layer above the inorganic insulating film 16; an inorganic insulating film (first insulating film) 18 on a layer above the gate electrode GE and the capacitive electrode GE'; a counter electrode CE on a layer above the inorganic insulating film 18; an inorganic insulating film (second insulating film) 20 on a layer above the counter electrode CE; layers SE1 to SE4 for forming a source electrode, a drain electrode, and wirings on a layer above the inorganic insulating film 20; and a planarization film (interlayer insulating film) 21 on a layer above the layers SE1 to SE4 for forming the source electrode, the drain electrode, and the wirings.

[0045] Moreover, the capacitive element is composed of the counter electrode CE of the capacitive element formed above the inorganic insulating film 18, the inorganic insulating film 18, and the capacitive electrode GE', and the capacitive electrode GE' is formed below the inorganic insulating film 18 and in the same layer as the layer forming the gate electrode GE and is formed so as to overlap with the counter electrode CE of the capacitive element.

[0046] The transistors (thin film transistors (TFTs)) TR1 and TR2 are configured to include the semiconductor film 15, the inorganic insulating film 16, the gate electrode GE, the inorganic insulating film 18, the inorganic insulating film 20, the source electrode, and the drain electrode.

[0047] The semiconductor film 15 is made of, for example, low temperature polycrystalline silicon (LTPS) or an oxide semiconductor.

[0048] The layers SE1 to SE4 for forming the source electrode, the drain electrode, and the wirings, the gate electrode GE, the capacitive electrode GE', and the counter electrode CE can be formed of, for example, a single-layer film or a laminated film of a metal containing at least one of aluminum (Al), tungsten (W), molybdenum (Mo), tantalum (Ta), chromium (Cr), titanium (Ti), copper (Cu), and silver (Ag).

[0049] The inorganic insulating films 16, 18, and 20 can be formed of, for example, a silicon oxide (SiOx) film, a silicon nitride (SiNx) film, or a silicon oxynitride film formed by CVD or a laminated film thereof.

[0050] The planarization film 21 can be formed of an organic material that can be coated, such as a polyimide resin or an acrylic resin, and is preferably formed using a photosensitive organic material.

[0051] As Figure 2As shown, in the active substrate 11 included in the display device 30 of the present embodiment, the first electrode 22 is formed in an island shape. And, in the present embodiment, taking the case where the first electrode 22 is a reflective electrode and a cathode and is formed of aluminum (Al) as an example for description, but it is not limited thereto. The first electrode 22 may be an anode or a transmissive electrode having visible light transmissivity.

[0052] When the first electrode 22 is a reflective electrode, for example, Ag, Al, MgAl, MgAg, etc. can be used as the first electrode 22, or a laminate formed by sequentially laminating a conductive first metal oxide layer, a metal layer that reflects visible light, and a second metal oxide layer that transmits visible light and has conductivity can also be used. The first metal oxide layer and the second metal oxide layer may be metal oxide layers selected from indium tin oxide (ITO (Indium Tin Oxide)) and indium zinc oxide (IZO (Indium / Zinc Oxide)), and the metal layer may be Ag or Al, etc.

[0053] When the first electrode 22 is a transmissive electrode, Ag, Al, MgAl, MgAg, etc. formed with a film thickness that can transmit visible light can be used as the first electrode 22, or indium tin oxide (ITO), indium zinc oxide (IZO), zinc oxide (such as ZnO), tin oxide (such as SnO2), titanium oxide (such as TiO2), or graphene, etc. can also be used.

[0054] Moreover, the first electrode 22 is provided for each of the plurality of sub-pixels constituting one pixel, and the first electrode 22 is driven for each sub-pixel through transistors TR1, TR2, etc. provided for each sub-pixel.

[0055] Figure 1 (a) to Figure 1 (f) of FIG. are diagrams showing a part of the manufacturing process of the display device 30 of the first embodiment. And, from Figure 1 (a) to Figure 1 (f), only the planarization film 21 and the first electrode 22 in the active substrate 11 shown in Figure 2 FIG. are illustrated, and illustration of other parts is omitted.

[0056] For Figure 2 the active substrate 11 shown in FIG., in the formation process of the first light-emitting layer 26R shown in Figure 1 (a) and Figure 1 (b) of FIG., the formation process of the second light-emitting layer 26B shown in Figure 1 (e) of FIG., Figure 1 (c) and Figure 1Before the step of forming the third light-emitting layer 26G shown in (d), an edge mask forming step of forming the edge masks 23L and 23S, a bank forming step of forming the banks 24, and a step of forming the functional layer 25 on the first electrode 22 side are performed.

[0057] In the edge mask forming step, the edge masks 23L and 23S are formed. The edge masks 23L and 23S fill the spaces between the island-shaped plurality of first electrodes 22 formed by the first electrode forming step and cover the edges of the plurality of first electrodes 22. As Figure 1 shown in (a) to Figure 1 shown in (f), since the edge mask 23L forms a bank 24 with a higher height at the upper part, its width is formed wider, and the overlapping area of the edge mask 23L and the first electrode 22 is large. On the other hand, since the edge mask 23S does not form a bank 24 at the upper part, its width is formed narrower, and the overlapping area of the edge mask 23S and the first electrode 22 is small.

[0058] The edge masks 23L and 23S can be formed of a photosensitive organic material that can be coated, such as a polyimide resin or an acrylic resin.

[0059] The banks 24 can be formed of a photosensitive organic material that can be coated, such as a polyimide resin or an acrylic resin.

[0060] The edge mask forming step and the bank forming step can also be one step using the same material. In the present embodiment, a photosensitive organic material containing an acrylic resin is used, and an exposure step and a development step using a mask (such as a halftone mask or a shadow mask) for making the exposure amount in the exposed area different are performed to form the edge masks 23L and 23S and the banks 24 at the same time, but it is not limited thereto.

[0061] The functional layer 25 on the first electrode 22 side formed in the step of forming the functional layer 25 on the first electrode 22 side is at least one of a hole injection layer and a hole transport layer when the first electrode 22 is an anode, and is at least one of an electron injection layer and an electron transport layer when the first electrode 22 is a cathode. The functional layer 25 on the first electrode 22 side can be formed by coating, for example, or can be formed by an evaporation method. And, in the step of forming the functional layer 25, a mask can be used or not used as needed. In addition, as the functional layer 25 on the first electrode 22 side, for example, ZnO, NiO, etc. nanoparticles doped with Al, Mg, Li, Ga, etc., undoped ZnO, etc. nanoparticles can be used, or the functional layer 25 on the first electrode 22 side can be patterned and formed by mixing nanoparticles and a photosensitive material and performing exposure and development.

[0062] In this embodiment, since the first electrode 22 is a cathode, as the functional layer 25 on the first electrode 22 side, Alq3, BCP, Cs2O3, ZnO, SnO2, In2O3, ZnMgO, etc., which are used as an electron transport layer (ETL), can be used. And when the first electrode 22 is an anode, as the functional layer 25 on the first electrode 22 side, TGB, TAPC, CBP, PVK, NiO, etc., which are used as a hole transport layer (HTL), can be used. And the film thickness of the functional layer 25 on the first electrode 22 side is preferably formed to be 200 nm or less, for example.

[0063] As Figure 1 As shown in (a) of [], in the formation process of the first light-emitting layer 26R, first, a resist material 26R0 for forming the first light-emitting layer is formed on the entire surface of the functional layer 25 on the first electrode 22 side. The resist material 26R0 for forming the first light-emitting layer contains, for example, a first quantum dot (first light-emitting material) including a ligand that emits red light, a photosensitive resin (such as an epoxy resin or an acrylic resin, etc.), a photoinitiator, and a solvent. The formation method of the resist material 26RO is not particularly limited. For example, it can be formed using a coater such as a spin coater, a slot coater, and a bar coater, or it can also be formed using a spraying method, etc. And in this embodiment, the case where the resist material 26R0 is a negative type is taken as an example for explanation, but it is not limited thereto. The resist material 26R0 can also be a positive type. And in this embodiment, the case where the first light-emitting layer 26R is a light-emitting layer that emits red light, the second light-emitting layer 26B is a light-emitting layer that emits blue light, and the third light-emitting layer 26G is a light-emitting layer that emits green light is taken as an example for explanation, but it is not limited thereto.

[0064] In this embodiment, the first light-emitting layer 26R, the second light-emitting layer 26B, and the third light-emitting layer 26G described below are all light-emitting layers containing quantum dots. As the quantum dots, for example, quantum dots having a core-shell structure can be used. As the core material, for example, CdSe, InP, ZnSe, ZnS, ZnTe, their mixed systems, CIGS, or Si-based materials can be used. In addition, as the shell material, for example, ZnSe, ZnS, ZnTe, CdS, or their mixed system (ZnSeS) can be used. In addition, an organic ligand or an inorganic ligand is disposed on the quantum dots. The outer diameter of the shell of the quantum dots can be about 1 to 15 nm. And, in order to make the center wavelengths of the light emitted by the first light-emitting layer 26R, the second light-emitting layer 26B, and the third light-emitting layer 26G different from each other, in each light-emitting layer, the outer diameter of the shell of the quantum dots can be different, or quantum dots of different types can be used. In this embodiment, the outer diameter of the shell of the second quantum dots that emit blue light included in the second light-emitting layer 26B is smaller than the outer diameter of the shell of the first quantum dots that emit red light included in the first light-emitting layer 26R and the outer diameter of the shell of the third quantum dots that emit green light included in the third light-emitting layer 26G, but it is not limited thereto.

[0065] After forming the resist material 26R0 over the entire surface of the functional layer 25 on the first electrode 22 side, for example, pre-baking is performed at a temperature of 50 degrees or more and 120 degrees or less for a predetermined time to evaporate the solvent and dry the resist material 26R0.

[0066] Then, as shown in (a) of Figure 1 , the resist material 26R0 is exposed using a photomask PM1 including an opening portion PMRK for passing exposure light L and a light-shielding portion PMR for blocking the exposure light L. And although the exposure intensity is not particularly limited, for example, it can be exposed at an exposure intensity of 10 mJ / cm 2 or more and 1000 mJ / cm 2 or less.

[0067] After the exposure, for example, development is performed using an alkaline solution, an organic solvent, water, etc., as shown in Figure 1As shown in (b) thereof, the first light-emitting layer 26R can be formed in a prescribed region (first region). Further, as in the present embodiment, when the first light-emitting layer 26R is a layer formed of a negative resist material 26R0, the post-baking process of the first light-emitting layer 26R can be appropriately omitted. When post-baking is performed, for example, it may be baked at a temperature of 80 degrees or more and 200 degrees or less for a prescribed time before or after the process of forming a second light-emitting layer 26B described later by an inkjet method to perform post-baking. In the present embodiment, the film thickness of the first light-emitting layer 26R including the first quantum dots (first light-emitting material) including ligands and the resin is formed to be 1 nm or more and 100 nm or less, but is not limited thereto, and the film thickness of the first light-emitting layer 26R can be appropriately determined. On the other hand, when the first light-emitting layer 26R is a layer formed of a positive resist material 26R0, post-baking is preferably performed after the development process. Further, depending on the positive resist material, overall surface exposure is sometimes preferably performed after the development process and before the post-baking process.

[0068] As described above, the first light-emitting layer 26R can be formed by photolithography.

[0069] Then, as Figure 1 As shown in (c) thereof, in the process of forming the third light-emitting layer 26G, first, a resist material 26G0 for forming the third light-emitting layer is formed over the entire surface of the first light-emitting layer 26R and the functional layer 25 on the first electrode 22 side. The resist material 26G0 for forming the third light-emitting layer contains, for example, third quantum dots (third light-emitting material) including ligands that emit green light, a photosensitive resin (such as an epoxy resin or an acrylic resin, etc.), a photoinitiator, and a solvent. The method of forming the resist material 26GO is not particularly limited, and for example, it can be formed using a coater such as a spin coater, a slit coater, and a bar coater, or can also be formed using a spray method or the like. And, in the present embodiment, the case where the resist material 26G0 is negative is taken as an example for description, but is not limited thereto, and the resist material 26G0 can also be positive.

[0070] After the resist material 26G0 is formed over the entire surface of the first light-emitting layer 26R and the functional layer 25 on the first electrode 22 side, for example, it is pre-baked at a temperature of 50 degrees or more and 120 degrees or less for a prescribed time to evaporate the solvent and dry the resist material 26G0.

[0071] Then, as Figure 1 As shown in (c) thereof, the resist material 26G0 is exposed using a photomask PM2 including an opening portion PMGK for exposure light L and a light-shielding portion PMG for blocking the exposure light L. And, although the exposure intensity is not particularly limited, for example, it can be 10 mJ / cm 2Expose at an exposure intensity of 1000 mJ / cm or less. 2 After exposure, for example, develop using an alkaline solution, an organic solvent, water, etc. As shown in (d) of

[0072] Figure 1 , the third light-emitting layer 26G can be formed in a specified region (third region). Also, as in the present embodiment, when the third light-emitting layer 26G is a layer formed of a negative resist material 26G0, the post-baking process of the third light-emitting layer 26G can be appropriately omitted. When performing post-baking, for example, it can also be fired at a temperature of 80°C or higher and 200°C or lower for a specified time before or after the process of forming the second light-emitting layer 26B described later by an inkjet method to perform post-baking. In the present embodiment, the film thickness of the third light-emitting layer 26G including the third quantum dots (third light-emitting material) including ligands and the resin is formed to be 1 nm or more and 100 nm or less, but it is not limited thereto, and the film thickness of the third light-emitting layer 26G can be appropriately determined. On the other hand, when the third light-emitting layer 26G is a layer formed of a positive resist material 26G0, post-baking is preferably performed after the developing process. In addition, depending on the positive resist material, overall exposure is sometimes preferably performed after the developing process and before the post-baking process.

[0073] As described above, the third light-emitting layer 26G can be formed by photolithography.

[0074] Then, as shown in (e) of Figure 1 In the process of forming the second light-emitting layer 26B, an inkjet material IJB for forming the second light-emitting layer containing the second quantum dots (second light-emitting material) and a solvent is dropped inside a bank 24 formed in a frame shape so as to surround a specified region (second region) using an inkjet device IJ. The second quantum dots (second light-emitting material) include ligands that emit blue light. And the first light-emitting layer 26R and the third light-emitting layer 26G are formed outside the bank 24 formed in a frame shape.

[0075] Then, for example, perform heat treatment at a temperature of 50°C or higher and 200°C or lower for a specified time to evaporate the solvent, and form a second light-emitting layer 26B composed of the second quantum dots (second light-emitting material) including ligands with a film thickness of 1 nm or more and 100 nm or less in contact with the inner side surface of the bank 24. In the present embodiment, the film thickness of the second light-emitting layer 26B is formed to be 1 nm or more and 100 nm or less, but it is not limited thereto, and the film thickness of the second light-emitting layer 26B can be appropriately determined.

[0076] As described above, the second light-emitting layer 26B can be formed by an inkjet method (ink droplet dropping method).

[0077] Then, for example,​​Figure 1 As shown in (f), a functional layer 27 on the second electrode 28 side is formed on the first light-emitting layer 26R, the second light-emitting layer 26B, and the third light-emitting layer 26G. Further, the film thickness of the functional layer 27 on the second electrode 28 side is preferably formed to be 300 nm or less, for example. Then, the second electrode 28, which is an electrode common to all sub-pixels, is formed to fabricate the display device 30. Although not shown, it is preferable to provide a light-transmissive sealing layer on the second electrode 28. The sealing layer may be composed of, for example, a first inorganic sealing film covering the second electrode 28, an organic sealing layer formed on the upper side of the first inorganic sealing film, and a second inorganic sealing film covering the organic sealing layer.

[0078] In the present embodiment, the second electrode 28 is a transmissive electrode having visible light transmissivity and is an anode, and thus is formed of indium tin oxide (ITO), but is not limited thereto. In the present embodiment, since the second electrode 28 is an anode, the functional layer 27 on the second electrode 28 side is at least one of a hole injection layer and a hole transport layer. For example, as the functional layer 27 on the second electrode 28 side, TGB, TAPC, CBP, PVK, NiO, or the like, which is a hole transport layer (HTL), can be used.

[0079] Figure 3 Figure (a) shows a top view of one pixel of the display device 30 according to the first embodiment. Figure 3 (b) is Figure 3 a cross-sectional view taken along line A-A' of the display device 30 according to the first embodiment shown in (a).

[0080] As Figure 3 shown in (a), one pixel of the display device 30 includes three adjacent sub-pixels, namely a red sub-pixel, a green sub-pixel, and a blue sub-pixel. Further, the first light-emitting layer 26R is formed so as to overlap a part of the plurality of first electrodes 22 in a top view, the second light-emitting layer 26B is formed so as to overlap another part of the plurality of first electrodes 22 in a top view, and the third light-emitting layer 26G is formed so as to overlap yet another part of the plurality of first electrodes 22 in a top view.

[0081] In the display device 30, since the first light-emitting layer 26R and the third light-emitting layer 26G are formed by photolithography, the dams 24 for forming the first light-emitting layer 26R and the third light-emitting layer 26G are not required, and the total number of dams 24 can be reduced. The edge mask 23 (23S) without a dam formed on the upper part can be formed to have a narrower width, and the area where the edge mask 23 (23S) overlaps with the first electrode 22 can be reduced. If the overlapping area of the edge mask 23 (23S) and the first electrode 22 becomes smaller, the area where the first electrode 22 and the functional layer 25 on the first electrode 22 side are in direct contact increases. Therefore, the light-emitting area RSGH of the first light-emitting layer 26R and the light-emitting area GSGH of the third light-emitting layer 26G can be expanded. On the other hand, the light-emitting area BSGH of the second light-emitting layer 26B is smaller than the light-emitting area RSGH of the first light-emitting layer 26R and the light-emitting area GSGH of the third light-emitting layer 26G. This is because the overlapping area of the edge mask 23 (23L) with a dam formed on the upper part and the first electrode 22 is relatively large, so the area where the first electrode 22 and the functional layer 25 on the first electrode 22 side are in direct contact is reduced.

[0082] As Figure 3 shown in (a) of Figure 3 and (b) of

[0083] In the display device 30 of the present embodiment, as shown in (a) and (b) above, the edge mask 23 is formed to cover the contact holes CH1, CH2, and CH3 provided for the sub-pixels of each color, but it is not limited thereto.

[0084] As described above, in the display device 30, since the light-emitting area RSGH of the first light-emitting layer 26R and the light-emitting area GSGH of the third light-emitting layer 26G can be expanded, the low-voltage operation of the rising voltage of the display device 30 and the improvement of the brightness of the display device 30 can be achieved.

[0085] In addition, in the display device 30, since the first light-emitting layer 26R and the third light-emitting layer 26G are formed by photolithography and the second light-emitting layer 26B is formed by inkjet, the light-emitting layers can be formed more effectively than in the case where all the light-emitting layers are formed by evaporation.

[0086] Furthermore, in the present embodiment, an inkjet material IJB for forming a second light-emitting layer is used, which contains a second quantum dot and a solvent. The second light-emitting layer 26B composed of a second quantum dot (second light-emitting material) containing a ligand is formed by an inkjet method. The second quantum dot contains a ligand with a poor carrier injection efficiency and emits blue light with a low EQE. The second light-emitting layer 26B composed of a second quantum dot (second light-emitting material) containing a ligand does not contain components that hinder the flow of carriers such as resin components contained in the resist material, like the first light-emitting layer 26R and the third light-emitting layer 26G. Therefore, a decrease in the light-emitting brightness of the second light-emitting layer 26B and a decrease in the carrier injection efficiency can be suppressed.

[0087] As described above, in the present embodiment, an example is given where the first light-emitting material contained in the first light-emitting layer 26R is a first quantum dot containing a ligand, the second light-emitting material contained in the second light-emitting layer 26B is a second quantum dot containing a ligand, and the third light-emitting material contained in the third light-emitting layer 26G is a third quantum dot containing a ligand. However, it is not limited thereto. For example, at least one of the first light-emitting material, the second light-emitting material, and the third light-emitting material may contain a ligand quantum dot, or the first light-emitting material, the second light-emitting material, and the third light-emitting material may all not contain a light-emitting material containing a ligand quantum dot. As a light-emitting material that does not contain a quantum dot, an organic light-emitting material used in an organic EL element can be cited.

[0088] In addition, in the present embodiment, an example is given where the second light-emitting layer 26B as a blue light-emitting layer is formed by an inkjet method. However, it is not limited thereto. The first light-emitting layer 26R as a red light-emitting layer or the third light-emitting layer 26G as a green light-emitting layer may also be formed by an inkjet method.

[0089] In addition, in the present embodiment, an example is given where the first light-emitting layer 26R as a red light-emitting layer is formed before the third light-emitting layer 26G as a green light-emitting layer. However, it is not limited thereto. The third light-emitting layer 26G as a green light-emitting layer may also be formed before the first light-emitting layer 26R as a red light-emitting layer.

[0090] Moreover, in the present embodiment, an example is given where one pixel of the display device 30 is formed by a red sub-pixel, a green sub-pixel, and a blue sub-pixel as three adjacent sub-pixels. However, it is not limited thereto. One pixel of the display device 30 may also include sub-pixels of other colors.

[0091] In the present embodiment, as Figure 2As shown, the case where a glass substrate is used as the substrate 10 has been described as an example, but it is not limited thereto. When the display device 30 is made into a flexible display device, the substrate 10 can also be peeled off from the resin film 12 by a Laser Lift Off process (LLO process) to be used as a flexible display device. In addition, after the substrate 10 is peeled off from the resin film 12 by the LLO process, a film can be pasted on the resin film 12 via an adhesive layer to form a flexible display device.

[0092] Figure 4 (a) of is a diagram showing a display device 31 according to a first modification of the first embodiment. Figure 4 (b) of is a diagram showing a display device 32 according to a second modification of the first embodiment. And, in Figure 4 (a) of and Figure 4 (b) of , the illustration of the second electrode 28 is omitted.

[0093] As Figure 4 (a) of shows, in the display device 31, the first light-emitting layer 26R and the third light-emitting layer 26G formed by photolithography are adjacent to each other, and one end portion of the first light-emitting layer 26R and one end portion of the third light-emitting layer 26G facing each other are separated by a predetermined distance R1. For example, when the first light-emitting layer 26R and the third light-emitting layer 26G are formed adjacent to each other in contact with each other, there is a possibility that the third light-emitting layer 26G emits light unexpectedly when the first light-emitting layer 26R emits light, or there is a possibility that the first light-emitting layer 26R emits light unexpectedly when the third light-emitting layer 26G emits light.

[0094] In the case of the display device 31, since one end portion of the first light-emitting layer 26R and one end portion of the third light-emitting layer 26G facing each other are separated by a predetermined distance R1, it is possible to suppress the unintentional light emission in the adjacent light-emitting layers as described above.

[0095] As Figure 4 (b) of shows, in the display device 32, one end portion 26RA of the first light-emitting layer 26R formed by photolithography is formed thicker than other portions of the first light-emitting layer 26R, and one end portion 26GA of the third light-emitting layer 26G formed by photolithography is formed thicker than other portions of the third light-emitting layer 26G. Generally, the end portion of the light-emitting layer formed by photolithography is formed in a tapered shape, so the film thickness of its end portion is thin, and current concentration may occur.

[0096] In the case of the display device 32, since one end portion 26RA of the first light-emitting layer 26R is formed to be thicker than other portions of the first light-emitting layer 26R, and one end portion 26GA of the third light-emitting layer 26G is formed to be thicker than other portions of the third light-emitting layer 26G, it is possible to suppress the possibility of current concentration occurring at the edge portions of the first light-emitting layer 26R and the third light-emitting layer 26G.

[0097] Moreover, one end portion 26RA of the first light-emitting layer 26R and one end portion 26GA of the third light-emitting layer 26G can be formed by performing exposure using a mask (e.g., a halftone mask or a shadow mask) that causes a difference in the exposure amount of the exposure region.

[0098] Figure 5 FIG. (a) shows a display device 33 according to a third modification of the first embodiment, Figure 5 FIG. (b) shows a display device 34 according to a fourth modification of the first embodiment. And in Figure 5 FIG. (a) and Figure 5 FIG. (b), illustration of the second electrode 28 is omitted.

[0099] As shown in Figure 5 FIG. (a), in the display device 33, a first thick film portion 26RGA is provided where a part of the edge of the first light-emitting layer 26R formed by photolithography and a part of the edge of the third light-emitting layer 26G formed by photolithography are joined and overlap. The first thick film portion 26RGA overlaps at least a part between the first electrode 22 overlapping the first light-emitting layer 26R and the first electrode 22 overlapping the third light-emitting layer 26G.

[0100] In the first thick film portion 26RGA, the resistance becomes high and current hardly flows. Therefore, by providing the first thick film portion 26RGA, it is possible to suppress color mixing between the first light-emitting layer 26R and the third light-emitting layer 26G. Further, by providing the first thick film portion 26RGA, it is also possible to suppress current concentration at the edge portion of the first electrode 22.

[0101] Moreover, the first thick film portion 26RGA can be formed, for example, by first performing exposure on a part of the region of the third light-emitting layer 26G that includes a part overlapping the first light-emitting layer 26R when performing exposure in the process of forming the third light-emitting layer 26G by photolithography after forming the first light-emitting layer 26R by photolithography.

[0102] In the above-described display devices 30, 31, 32, 33, a common functional layer 25 on the first electrode 22 side is provided for all sub-pixels. In Figure 5In the display device 34 shown in (b), a functional layer 25R, 25G, 25B on the first electrode 22 side is provided for each subpixel of each color. The functional layers 25R, 25G, 25B on the first electrode 22 side can each be formed, for example, using one material in a single photolithography process or using three different materials in three photolithography processes.

[0103] In the display device 34, a first thick film portion 26RGA' is provided. In the first thick film portion 26RGA', the resistance becomes high and current hardly flows. Therefore, by providing the first thick film portion 26RGA', color mixing between the first light emitting layer 26R and the third light emitting layer 26G can be suppressed. Further, by providing the first thick film portion 26RGA', concentration of current at the edge portion of the first electrode 22 can also be suppressed.

[0104] Figure 6 FIG. (a) shows a display device 35 according to a fifth modification of the first embodiment. Figure 6 FIG. (b) shows a display device 36 according to a sixth modification of the first embodiment. And, in Figure 6 FIG. (a) and Figure 6 FIG. (b), illustration of the second electrode 28 is omitted.

[0105] In Figure 6 the display device 35 shown in FIG. (a), a first thick film portion 26GRA is provided. And the first thick film portion 26GRA can be formed, for example, by the following method: First, after forming the third light emitting layer 26G by photolithography, when performing exposure in the process of forming the first light emitting layer 26R by photolithography, exposure is performed on a region including a part of the first light emitting layer 26R overlapping with the third light emitting layer 26G.

[0106] In the display device 35, a first thick film portion 26GRA is provided. In the first thick film portion 26GRA, the resistance becomes high and current hardly flows. Therefore, by providing the first thick film portion 26GRA, color mixing between the first light emitting layer 26R and the third light emitting layer 26G can be suppressed. Further, by providing the first thick film portion 26GRA, concentration of current at the edge portion of the first electrode 22 can also be suppressed.

[0107] In Figure 6 the display device 36 shown in FIG. (b), for each subpixel of each color, there is provided: a functional layer 25R' on the first electrode 22 side overlapping with the first light emitting layer 26R, a functional layer 25G on the first electrode 22 side overlapping with the third light emitting layer 26G, and a functional layer 25B on the first electrode 22 side overlapping with the second light emitting layer 26B.

[0108] In the display device 36, in addition to Figure 5In addition to the first thick film portion 26RGA shown in (a) thereof, a second thick film portion 25RGA is also provided. The second thick film portion 25RGA is a portion where a part of the edge of the functional layer (first functional layer) 25R' on the first electrode 22 side that overlaps with the first light emitting layer 26R and a part of the edge of the functional layer (second functional layer) 25G on the first electrode 22 side that overlaps with the third light emitting layer 26G are joined and overlapped. Moreover, the second thick film portion 25RGA overlaps at least a part between the first electrode 22 that overlaps with the first light emitting layer 26R and the first electrode 22 that overlaps with the third light emitting layer 26G.

[0109] The second thick film portion 25RGA can be formed, for example, in the following manner: First, after forming the functional layer (first functional layer) 25R' on the first electrode 22 side by photolithography, when performing exposure in the process of forming the functional layer (second functional layer) 25G on the first electrode 22 side by photolithography, a part of the region of the functional layer (second functional layer) 25G on the first electrode 22 side that overlaps with the functional layer (first functional layer) 25R' on the first electrode 22 side is included in the exposure.

[0110] In the display device 36, the second thick film portion 25RGA is provided. In the second thick film portion 25RGA, the resistance becomes higher and the current hardly flows. Therefore, by providing the second thick film portion 25RGA, color mixing between the first light emitting layer 26R and the third light emitting layer 26G can be suppressed. Further, by providing the second thick film portion 25RGA, concentration of current at the edge portion of the first electrode 22 can also be suppressed.

[0111] In the present embodiment, an example is given where the second thick film portion 25RGA is provided in the display device 36 by forming a part of the edge of the functional layer (first functional layer) 25R' on the first electrode 22 side and a part of the edge of the functional layer (second functional layer) 25G on the first electrode 22 side that overlaps with the third light emitting layer 26G to be joined and overlapped, but it is not limited thereto. For example, the functional layer 27 on the second electrode 28 side can also be provided for each color sub-pixel, and the second thick film portion can be provided in such a manner that a part of the edge of the functional layer (first functional layer) on the second electrode 28 side that overlaps with the first light emitting layer 26R and a part of the edge of the functional layer (second functional layer) on the second electrode 28 side that overlaps with the third light emitting layer 26G are joined and overlapped.

[0112] Figure 7 of (a) represents Figure 5 a view of the display device 33 of the third modification of the first embodiment illustrated in (a) thereof, Figure 7 of (b) represents a view of the display device 37 of the seventh modification of the first embodiment, Figure 7 of (c) represents a view of the display device 38 of the eighth modification of the first embodiment. And inFigure 7 In (a) of Figure 7 , (b) of Figure 7 and (c) of

[0113] , the illustration of the second electrode 28 and the functional layer 27 on the second electrode 28 side is omitted. Figure 7 In the display device 37 shown in (b) of Figure 7 , a first thick film portion 26RGA” is provided. The thickness of the first thick film portion 26RGA” is thicker than the thickness of the first thick film portion 26RGA included in the display device 33 shown in (a) of

[0114] The first thick film portion 26RGA” can be formed, for example, as follows: First, after forming one end portion 26RA of the first light emitting layer 26R to be thicker than other portions of the first light emitting layer 26R by photolithography, when exposing in the process of forming the third light emitting layer 26G by photolithography, a part of the region of the third light emitting layer 26G overlapping with the one end portion 26RA of the first light emitting layer 26R is included in the exposure. And, in the process of forming the third light emitting layer 26G by photolithography, one end portion 26GA of the third light emitting layer 26G is formed to be thicker than other portions of the third light emitting layer 26G. The first thick film portion 26RGA” includes the one end portion 26RA of the first light emitting layer 26R and the one end portion 26GA of the third light emitting layer 26G.

[0115] In the first thick film portion 26RGA”, the resistance becomes higher and current hardly flows. Therefore, by providing the first thick film portion 26RGA”, color mixing between the first light emitting layer 26R and the third light emitting layer 26G can be suppressed. Further, by providing the first thick film portion 26RGA”, concentration of current at the edge portion of the first electrode 22 can also be suppressed.

[0116] In Figure 7 , in the display device 38 shown in (c) of

[0117] On the bank 24, an upper bank 24U is provided. The upper bank 24U is formed of the same layer made of the same material as the first light emitting layer 26R and the same layer made of the same material as the third light emitting layer 26G.

[0118] In the present embodiment, the case where the upper bank 24U is formed of these two layers, i.e., the same layer made of the same material as the first light emitting layer 26R and the same layer made of the same material as the third light emitting layer 26G, is taken as an example for explanation, but it is not limited thereto. The upper bank 24U may also be formed of at least one of the same layer made of the same material as the first light emitting layer 26R and the same layer made of the same material as the third light emitting layer 26G.

[0119] Figure 8 (a) to Figure 8 The illustration of (c) of Figure 7 FIG. is a view showing a part of the manufacturing process of the display device 38 according to the eighth modification of the first embodiment illustrated in (c) of Figure 8 In (c) of , the illustration of the second electrode 28 and the functional layer 27 on the second electrode 28 side is omitted.

[0120] Figure 8 (a) of shows a state in which after exposing the resist material 26R0 formed over the entire surface using the photomask PM3, developing and heat-treating are performed, and the first light-emitting layer 26R including one end portion 26RA formed thicker than other portions is formed in a predetermined region (first region). The photomask PM3 includes an opening portion PMRK through which the exposure light L passes, a light-shielding portion PMR that blocks the exposure light L, and a halftone portion (shaded portion) PMRH that passes less exposure light L than the opening portion PMRK and more exposure light L than the light-shielding portion PMR. Further, the first light-emitting layer 26R for forming the upper bank 24U is also formed on the bank 24.

[0121] Figure 8 (b) of shows a state in which after exposing the resist material 26G0 formed over the entire surface using the photomask PM4, developing and heat-treating are performed, and the third light-emitting layer 26G including one end portion 26GA formed thicker than other portions is formed in a predetermined region (third region). The photomask PM4 includes an opening portion PMGK through which the exposure light L passes, a light-shielding portion PMG that blocks the exposure light L, and a halftone portion (shaded portion) PMGH that passes less exposure light L than the opening portion PMGK and more exposure light L than the light-shielding portion PMG. Further, the third light-emitting layer 26G for forming the upper bank 24U is also formed on the bank 24. And, in order to form Figure 8 the first thick film portion 26RGA” shown in (c) of , when performing exposure in the process of forming the third light-emitting layer 26G, an area including a part of the third light-emitting layer 26G overlapping with the one end portion 26RA of the first light-emitting layer 26R is included in the exposure.

[0122] As described above, as Figure 8 shown in (c) of , the display device 38 including the first thick film portion 26RGA” and the upper bank 24U can be manufactured.

[0123] 〔Second Embodiment〕

[0124] Next, based on Figure 9 and Figure 10, a description will be given of the second embodiment of the present invention. In the display devices 39, 40, and 41 of the present embodiment, the difference from the first embodiment is that the bank 24' is formed of at least one of the same layer 26RB formed of the same material as the first light-emitting layer 26R and the same layer 26GB formed of the same material as the third light-emitting layer 26G. The rest is the same as the description in the first embodiment. For ease of explanation, components having the same functions as those described in the first embodiment are denoted by the same reference numerals, and their descriptions are omitted.

[0125] Figure 9 (a) to Figure 9 (c) are diagrams showing a part of the manufacturing process of the display device 39 of the second embodiment. And, in Figure 9 (c), the illustration of the second electrode 28 and the functional layer 27 on the second electrode 28 side is omitted.

[0126] Figure 9 (a) is a diagram showing a process of exposing a resist material 26G0 formed over the entire surface using a photomask PM5. The photomask PM5 includes an opening portion PMGK through which exposure light L passes, a light-shielding portion PMG that blocks the exposure light L, and a halftone portion (shaded portion) PMGH that passes less exposure light L than the opening portion PMGK and more exposure light L than the light-shielding portion PMG. After the exposure, development and heat treatment are performed. As shown in Figure 9 (b), a third light-emitting layer 26G and the same layer 26GB formed of the same material as the third light-emitting layer 26G are formed in a predetermined region (third region). The same layer 26GB is formed thicker than the third light-emitting layer 26G and becomes a part of the bank 24'.

[0127] Figure 9 (b) is a diagram showing a process of exposing a resist material 26R0 formed over the entire surface using a photomask PM6. The photomask PM6 includes an opening portion PMRK through which exposure light L passes, a light-shielding portion PMR that blocks the exposure light L, and a halftone portion (shaded portion) PMRH that passes less exposure light L than the opening portion PMRK and more exposure light L than the light-shielding portion PMR. After the exposure, development and heat treatment are performed. As shown in Figure 9 (c), a first light-emitting layer 26R and the same layer 26RB formed of the same material as the first light-emitting layer 26R are formed in a predetermined region (first region). The same layer 26RB is formed thicker than the first light-emitting layer 26R and becomes a part of the bank 24'.

[0128] Figure 9The (c) of [[ID=]] indicates the formation process of the second light-emitting layer 26B in which the second light-emitting layer 26B is formed only in a specified area (second area) after the formation processes of the third light-emitting layer 26G and the first light-emitting layer 26R. An inkjet material IJB for forming the second light-emitting layer containing a second quantum dot (second light-emitting material) and a solvent is dropped inside the bank 24' using an inkjet device IJ. The second quantum dot (second light-emitting material) contains a ligand that emits blue light. The bank 24' is formed in a frame shape so as to surround the specified area (second area). Also, the first light-emitting layer 26R and the third light-emitting layer 26G are formed outside the bank 24' formed in a frame shape.

[0129] Then, for example, heat treatment is performed at a temperature of 50 degrees or more and 200 degrees or less for a specified time period to evaporate the solvent, and the second light-emitting layer 26B composed of the second quantum dot (second light-emitting material) containing the ligand is formed with a film thickness of 1 nm or more and 100 nm or less in contact with the inner side surface of the bank 24'.

[0130] In Figure 9 In the display device 39 shown in the (c) of [[ID=]], the bank 24' is formed of the same layer 26RB formed of the same material as the first light-emitting layer 26R and the same layer 26GB formed of the same material as the third light-emitting layer 26G. Therefore, there is no need to use other materials for forming the bank, and thus shortening of the manufacturing process and reduction of material costs can be achieved. In addition, since the bank 24' is formed of these two layers, the same layer 26RB formed of the same material as the first light-emitting layer 26R and the same layer 26GB formed of the same material as the third light-emitting layer 26G, the bank can be formed relatively high.

[0131] And in the present embodiment, the case where the bank 24' is formed of the same layer 26RB formed of the same material as the first light-emitting layer 26R and the same layer 26GB formed of the same material as the third light-emitting layer 26G is illustrated, but it is not limited thereto. The bank 24' may also be formed of at least one of the same layer 26RB formed of the same material as the first light-emitting layer 26R and the same layer 26GB formed of the same material as the third light-emitting layer 26G.

[0132] Figure 10 The (a) of [[ID=]] shows a diagram of the display device 40 of the first modification of the second embodiment, Figure 10 The (b) of [[ID=]] shows a diagram of the display device 41 of the second modification of the second embodiment. And in Figure 10 the (a) of [[ID=]] and Figure 10 the (b) of [[ID=]], illustration of the second electrode 28 and the functional layer 27 on the second electrode 28 side is omitted.

[0133] In Figure 10In the display device 40 shown in (a), there is a bank 24' formed by the same layer 26RB formed of the same material as the first light-emitting layer 26R and the same layer 26GB formed of the same material as the third light-emitting layer 26G, and the first thick film portion 26GRA' as described above in the first embodiment is further provided.

[0134] In Figure 10 In the display device 41 shown in (b), there is a bank 24' formed by the same layer 26RB formed of the same material as the first light-emitting layer 26R and the same layer 26GB formed of the same material as the third light-emitting layer 26G, and the first thick film portion 26GRA'' as described above in the first embodiment is further provided.

[0135] And Figure 10 The first thick film portion 26GRA' shown in (a) and Figure 10 The first thick film portion 26GRA'' shown in (b) are not formed in a frame shape. Therefore, even if the first thick film portions 26GRA' and 26GRA'' are provided, the light-emitting regions of the first light-emitting layer 26R and the third light-emitting layer 26G can be enlarged.

[0136] 〔Third Embodiment〕

[0137] Next, based on Figure 11 The third embodiment of the present invention will be described. In the display devices 42, 43, and 44 of the present embodiment, the difference from the first and second embodiments is that the light-emitting regions of the first light-emitting layer 26R, the second light-emitting layer 26B, and the third light-emitting layer 26G are enlarged by reducing the area of the bank 24 formed, and the rest is the same as the description in the first and second embodiments. For ease of explanation, components having the same functions as those described in the first and second embodiments are labeled with the same reference numerals, and their descriptions are omitted.

[0138] Figure 11 (a) of Figure 11 (b) are diagrams for explaining the schematic configuration of the display device 42 of the third embodiment, Figure 11 (c) is a diagram showing the display device 43 of the first modification of the third embodiment, Figure 11 (d) is a diagram showing the display device 44 of the second modification of the third embodiment.

[0139] As Figure 11 (a) of Figure 11As shown in FIG. (b), in the display device 42, a plurality of first electrodes 22 are arranged in a matrix, and the first light-emitting layer 26R and the third light-emitting layer 26G formed in a linear shape by photolithography overlap with, for example, a column of first electrode groups in which the first electrodes 22 are arranged along the first direction D1, and the second light-emitting layer 26B formed in a linear shape by inkjet method overlaps with, for example, two columns of first electrode groups in which the first electrodes 22 are arranged along the first direction D1. In the second direction D2 orthogonal to the first direction D1, the two first electrodes 22 overlapping with the second light-emitting layer 26B belong to different pixels GAS0. And the pixel GASO includes, for example, three first electrodes 22 adjacent in the second direction D2 and overlapping with different light-emitting layers.

[0140] In the above-described first and second embodiments, the dams 24, 24' are formed in a frame shape for each sub-pixel, but in the display device 42, the dam 24 is composed of two opposing partition walls surrounding the left and right sides of the second light-emitting layer 26B formed in a linear shape by inkjet method. That is, as Figure 11 shown in FIG. (a), the dam 24 is composed of two opposing partition walls that divide the inner region and the outer region. The second light-emitting layer 26B is formed in the inner region between the two opposing partition walls, and the first light-emitting layer 26R and the third light-emitting layer 26G are formed in the outer region between the two opposing partition walls. Therefore, the area for forming the dam 24 can be reduced, and the light-emitting regions of the first light-emitting layer 26R, the second light-emitting layer 26B, and the third light-emitting layer 26G can be enlarged.

[0141] And, before obtaining the Figure 11 monolithic display device 42 shown in FIGS. (a) and Figure 11 (b), that is, in the process of forming the first light-emitting layer 26R, the second light-emitting layer 26B, and the third light-emitting layer 26G on a large substrate, the dam 24 can be formed in a frame shape or can be composed of two opposing partition walls that divide the inner region and the outer region. The large substrate refers to a substrate having a size such that a plurality of display devices 42 can be obtained by dividing.

[0142] When the dam 24 is formed in a frame shape on the large substrate according to the size of the display device 42, in the monolithic process, for example, the upper and lower sides of the dam 24 formed in a frame shape can also be cut off, as in the Figure 11 monolithic display device 42 shown in FIGS. (a) and Figure 11 (b), the dam 24 is composed of two opposing partition walls that divide the inner region and the outer region. It is not limited thereto. In the monolithic process, either only one of the upper and lower sides of the dam 24 formed in a frame shape can be cut off, or the upper and lower sides of the dam 24 formed in a frame shape can be not cut off.

[0143] In addition, in a large substrate, when the bank 24 is formed in a frame shape that straddles the dimensions between a plurality of display devices 42, or when the bank 24 is formed to include two opposing partition walls that divide the inner region and the outer region straddling between a plurality of display devices 42, in the monolithic process, the large substrate can also be cut, and as in the monolithic display devices 42 shown in (a) of Figure 11 and Figure 11 (b), the bank 24 is composed of two opposing partition walls that divide the inner region and the outer region.

[0144] As Figure 11 (c) shows, in the display device 43, the first light-emitting layer 26R and the third light-emitting layer 26G formed by photolithography are arranged so as to surround the second light-emitting layer 26B formed by inkjet. In the display device 43, since one frame-shaped bank 24 is used to form the second light-emitting layer 26B of four adjacent pixels GAS0, the area for forming the bank 24 can be reduced, and the light-emitting regions of the first light-emitting layer 26R, the second light-emitting layer 26B, and the third light-emitting layer 26G can be enlarged. Also, in the display device 43 of the present embodiment, the first light-emitting layer 26R and the third light-emitting layer 26G are each arranged in an island shape for each pixel GASO, but it is not limited thereto.

[0145] As Figure 11 (d) shows, in the display device 44, the first light-emitting layer 26R and the third light-emitting layer 26G formed by photolithography are arranged so as to surround the second light-emitting layer 26B formed by inkjet. Also, in the display device 44 of the present embodiment, the first light-emitting layer 26R and the third light-emitting layer 26G are each arranged so as to straddle two adjacent pixels GASO, but it is not limited thereto. And Figure 11 The group of pixels GAS0 as shown in (c) of Figure 11 or (d) can be arranged in a repeated pattern or arranged in a triangular pattern.

[0146] [Fourth Embodiment]

[0147] Next, based on Figure 12 and Figure 13 the fourth embodiment of the present invention will be described. In the display device 45 of the present embodiment, the difference from the first to third embodiments is that the first electrodes 22R, 22G, 22B are arranged in a Pentile arrangement, and the rest is the same as the description of the first to third embodiments. For ease of explanation, components having the same functions as those described in the first to third embodiments are labeled with the same reference numerals, and their descriptions are omitted.

[0148] Figure 12 (a) is a top view showing the display device 45 of the fourth embodiment, Figure 12in (b) is Figure 12 A cross-sectional view taken along line B-B' of the display device 45 of the fourth embodiment shown in (a).

[0149] In Figure 12 In (a) and Figure 12 In the display device 45 in which the first electrodes 22R, 22G, and 22B are arranged in a Pentile arrangement as shown in (b), there is a bank 24' formed of the same layer 26RB formed of the same material as the first light-emitting layer 26R and the same layer 26GB formed of the same material as the third light-emitting layer 26G, and there is also a first thick film portion 26GRA'''.

[0150] And Figure 12 Since the first thick film portion 26GRA''' shown in (b) is not formed in a frame shape, even if the first thick film portion 26GRA''' is provided, the light-emitting regions of the first light-emitting layer 26R and the third light-emitting layer 26G can be enlarged.

[0151] Figure 13 In (a) and Figure 13 In (b) shows a top view of a schematic configuration of photomasks PM7 and PM8 used in the manufacturing process of the display device 45 of the fourth embodiment shown in (a). Figure 12 The photomask PM7 shown in (a) includes: an opening portion PMGK for exposure light L, a light-shielding portion PMG that blocks the exposure light L, and a halftone portion (shadow portion) PMGH that passes through less exposure light L than the opening portion PMGK and more exposure light L than the light-shielding portion PMG. The photomask PM7 is for forming

[0152] Figure 13 The third light-emitting layer 26G shown in (b), the same layer 26GB formed of the same material as the third light-emitting layer 26G, and the same layer 26GA formed of the same material as the third light-emitting layer 26G, where the same layer 26GB is formed thicker than the third light-emitting layer 26G and becomes a part of the bank 24', and the same layer 26GA is formed thicker than the third light-emitting layer 26G and becomes a part of the first thick film portion 26GRA'''. Figure 12

[0153] Figure 13 Figure 12 The photomask PM8 shown in (b) includes an opening portion PMRK for exposure light L, a light-shielding portion PMR that blocks the exposure light L, and a halftone portion (shadow portion) PMRH that passes through less exposure light L than the opening portion PMRK and more exposure light L than the light-shielding portion PMR. The photomask PM8 is for forming in a specified region (first region) Figure 12a photomask for the first light-emitting layer 26R shown in (b) thereof, the same layer 26RB formed of the same material as the first light-emitting layer 26R, and the same layer 26RC formed of the same material as the first light-emitting layer 26R, wherein the same layer 26RB is formed thicker than the first light-emitting layer 26R and becomes a part of the bank 24', and the same layer 26RC is formed thicker than the third light-emitting layer 26G and becomes a part of the first thick film portion 26GRA'''.

[0154] 〔Fifth Embodiment〕

[0155] Next, based on Figure 14 the fifth embodiment of the present invention will be described. In the display device 46 of the present embodiment, the difference from the first to fourth embodiments is that not only the second light-emitting layer 26B but also the third light-emitting layer 26G' is formed by an inkjet method, and the other descriptions are the same as those of the first to fourth embodiments. For ease of explanation, components having the same functions as those described in the first to fourth embodiments are labeled with the same reference numerals, and their descriptions are omitted.

[0156] Figure 14 of (a) and Figure 14 (b) show a part of the manufacturing process of the display device 46 of the fifth embodiment, Figure 14 and (c) shows a top view of one pixel of the display device 46 of the fifth embodiment.

[0157] After forming the first light-emitting layer 26R by photolithography, as Figure 14 shown in (a) thereof, in the formation process of the third light-emitting layer 26G', an inkjet material IJG for forming the third light-emitting layer, which contains a third quantum dot (third light-emitting material) and a solvent, is dropped inside a bank 24 formed in a frame shape so as to surround a specified area (third area) by using an inkjet device IJ. The third quantum dot (third light-emitting material) contains a ligand that emits green light. And the first light-emitting layer 26R is formed outside the bank 24 formed in a frame shape.

[0158] Then, for example, heat treatment is performed at a temperature of 50 degrees or more and 200 degrees or less for a specified time to evaporate the solvent, and a third light-emitting layer 26G' composed of the third quantum dot (third light-emitting material) is formed with a film thickness of 1 nm or more and 100 nm or less in contact with the inner side surface of the bank 24.

[0159] Then, as Figure 14 shown in (b) thereof, the second light-emitting layer 26B is formed by an inkjet method.

[0160] As Figure 14As shown in FIG. (c), in the display device 46, since the bank 24 is not formed in a frame shape so as to surround the first light-emitting layer 26R, the light-emitting region RSGH of the first light-emitting layer 26R can be enlarged.

[0161] Moreover, in the display device 46, when the bank 24 is formed of the light-emitting layer, the bank is formed of the same layer made of the same material as the first light-emitting layer 26R. Further, when the upper bank is formed, the upper bank is also formed of the same layer made of the same material as the first light-emitting layer 26R.

[0162] In the present embodiment, as an example, the case where the inkjet material IJG for forming the third light-emitting layer is formed inside the bank 24 formed in a frame shape and the inkjet material IJB for forming the second light-emitting layer is formed inside the bank 24 formed in a frame shape has been described, but the present invention is not limited thereto. For example, the inkjet material IJG for forming the third light-emitting layer may be formed in the inner region of the bank 24 including two opposing partition walls that divide the inner region and the outer region, and the inkjet material IJB for forming the second light-emitting layer may be formed in the inner region of the bank 24 including two opposing partition walls that divide the inner region and the outer region. Further, one of the inkjet material IJG for forming the third light-emitting layer and the inkjet material IJB for forming the second light-emitting layer may be formed inside the bank 24 formed in a frame shape, and the other of the inkjet material IJG for forming the third light-emitting layer and the inkjet material IJB for forming the second light-emitting layer may be formed in the inner region of the bank 24 including two opposing partition walls that divide the inner region and the outer region.

[0163] 〔Sixth Embodiment〕

[0164] Next, based on Figure 15 the sixth embodiment of the present invention will be described. In the display device 47 of the present embodiment, the difference from the first to fifth embodiments is that the first light-emitting layer 26R, the second light-emitting layer 26B', and the third light-emitting layer 26G are formed by using a photolithography method and a vapor deposition method instead of the inkjet method, and the other descriptions are the same as those of the first to fifth embodiments. For the sake of convenience of explanation, the components having the same functions as those described in the first to fifth embodiments are denoted by the same reference numerals, and their descriptions are omitted.

[0165] Figure 15 FIGS. (a) to Figure 15 FIGS. (f) show diagrams of a part of the manufacturing process of the display device 47 of the sixth embodiment.

[0166] Regarding Figure 15 FIGS. (a) to Figure 15 FIGS. (d), except for the fact that the bank 24 is not provided, have been described in the first embodiment, and thus their descriptions are omitted here.

[0167] Figure 15 (e) is a diagram for explaining the process of forming the second light-emitting layer 26B' in a specified area (second area) using an evaporation mask VM1 including an opening part VMK through which particles BVS are evaporated and a blocking part VMB through which particles BVS are not evaporated.

[0168] Since the second light-emitting layer 26B' is formed by an evaporation method using the evaporation mask VM1, it can be formed only in the specified area (second area). In addition, since the second light-emitting layer 26B' is formed by the evaporation method using the evaporation mask VM1, it is composed of a light-emitting material (second light-emitting material) that emits blue light.

[0169] As Figure 15 shown in (f), in the display device 47, since the bank 24 is not provided, the light-emitting areas of the first light-emitting layer 26R, the second light-emitting layer 26B', and the third light-emitting layer 26G can be enlarged.

[0170] In the present embodiment, the case of forming the second light-emitting layer 26B' by an evaporation method is illustrated, but it is not limited thereto. In the case of forming the second light-emitting layer 26B' and the third light-emitting layer 26G by a photolithography method first, the first light-emitting layer 26R can be formed by an evaporation method. In addition, in the case of forming the first light-emitting layer 26R and the second light-emitting layer 26B' by a photolithography method first, the third light-emitting layer 26G can be formed by an evaporation method.

[0171] And, in the present embodiment, as Figure 15 shown in (e), the case of forming the second light-emitting layer 26B' in a specified area (second area) by an evaporation method using the evaporation mask VM1 is illustrated as an example, but it is not limited thereto. For example, the second light-emitting layer 26B' can also be formed using a mask and a spraying method. In the case of forming the second light-emitting layer 26B' using a mask and a spraying method, for example, the inkjet material IJB for forming the second light-emitting layer described in the first embodiment can be ejected through the opening part of the mask.

[0172] And, in the case of forming the second light-emitting layer 26B' by an evaporation method, compared with the case of forming the second light-emitting layer 26B' by an inkjet method or a spraying method, the energy used in the manufacturing process is large. Considering energy conservation, it is preferable to form the second light-emitting layer 26B' by an inkjet method or a spraying method.

[0173] 〔Supplementary Notes〕

[0174] The present invention is not limited to the above-described embodiments, and various modifications can be made within the scope defined by the claims. Embodiments obtained by appropriately combining technical means disclosed in different embodiments are also included in the technical scope of the present invention. Moreover, new technical features can be formed by combining the technical methods disclosed in the respective embodiments.

[0175] Industrial Applicability

[0176] The present invention can be used in a display device and a method for manufacturing the display device.

[0177] Explanation of Reference Numerals

[0178] 11 Active Substrate (Substrate)

[0179] 22 First Electrode

[0180] 22R, 22G, 22B First Electrode

[0181] 23, 23S, 23L Edge Mask

[0182] 24, 24’ Dam

[0183] 24U Upper Dam

[0184] 25, 27 Functional Layer

[0185] 25R, 25G, 25B Functional Layer

[0186] 25R’ Functional Layer

[0187] 25RGA Second Film Thickness Portion

[0188] 26R First Light Emitting Layer

[0189] 26B, 26B’ Second Light Emitting Layer

[0190] 26G, 26G’ Third Light Emitting Layer

[0191] 26RGA First Film Thickness Portion

[0192] 26RGA’ First Film Thickness Portion

[0193] 26RGA ” First Film Thickness Portion

[0194] 26RGA ”’ First Film Thickness Portion

[0195] 26GRA’, 26GRA ” First Film Thickness Portion

[0196] 26GRA ”’ First Film Thickness Portion

[0197] 28 Second Electrode

[0198] 30 - 47 Display Device

Claims

1. A display device, characterized in that, having: a substrate; a plurality of island-shaped first electrodes formed on one side surface of the substrate; a first light-emitting layer including a first light-emitting material and a resin, and formed on the one side surface so as to overlap a part of the plurality of first electrodes; a second light-emitting layer composed of a second light-emitting material, and formed on the one side surface so as to overlap another part of the plurality of first electrodes; a first bank formed in a frame shape or including two opposing partition walls dividing an inner region and an outer region, the second light-emitting layer is disposed inside the first bank in contact with an inner side surface of the first bank, the first light-emitting layer is disposed outside the first bank, the display device further has a third light-emitting layer containing a third light-emitting material and a resin, and formed on the one side surface so as to overlap still another part of the plurality of first electrodes, the third light-emitting layer is disposed outside the first bank, the first bank includes: a first layer formed of the same material as the first light-emitting layer; and a second layer formed of the same material as the third light-emitting layer and laminated with the first layer, an upper surface of a lower side layer of the first layer and the second layer is higher than an upper surface of the second light-emitting layer.

2. The display device according to claim 1, wherein an upper bank is provided on the first bank, and the upper bank is formed of at least one of the same layer formed of the same material as the first light-emitting layer and the same layer formed of the same material as the third light-emitting layer.

3. The display device according to claim 1 or 2, wherein a first thick film portion where a part of an edge of the first light-emitting layer is in contact with and overlaps a part of an edge of the third light-emitting layer is further provided, the first thick film portion overlaps at least a part between the first electrode overlapping the first light-emitting layer and the first electrode overlapping the third light-emitting layer.

4. The display device according to claim 1 or 2, wherein the first light-emitting layer and the third light-emitting layer are disposed adjacent to each other, one end portions of the first light-emitting layer and the third light-emitting layer facing each other are separated.

5. The display device according to claim 1 or 2, wherein one end portion of the first light-emitting layer is formed thicker than other parts of the first light-emitting layer, one end portion of the third light-emitting layer is formed thicker than other parts of the third light-emitting layer.

6. The display device according to claim 1 or 2, wherein a first functional layer overlapping the first light-emitting layer and a second functional layer overlapping the third light-emitting layer are further provided, a second thick film portion where a part of an edge of the first functional layer is in contact with and overlaps a part of an edge of the second functional layer is further provided, the second thick film portion overlaps at least a part between the first electrode overlapping the first light-emitting layer and the first electrode overlapping the third light-emitting layer.

7. The display device according to claim 1 or 2, wherein the plurality of first electrodes are arranged in a matrix shape, The first light-emitting layer and the third light-emitting layer respectively overlap with a column of first electrode groups in which the first electrode is arranged along a first direction. The second light-emitting layer overlaps with two columns of first electrode groups in which the first electrode is arranged along the first direction. In a second direction orthogonal to the first direction, the two first electrodes overlapping with the second light-emitting layer respectively belong to different pixels.

8. The display device according to claim 1 or 2, characterized in that The first light-emitting layer and the third light-emitting layer are arranged to surround the second light-emitting layer.

9. The display device according to claim 1 or 2, characterized in that The center wavelength of the light emitted by the second light-emitting layer is shorter than the center wavelength of the light emitted by the first light-emitting layer and the center wavelength of the light emitted by the third light-emitting layer.

10. The display device according to claim 1 or 2, characterized in that The first light-emitting material is a first quantum dot containing a ligand. The second light-emitting material is a second quantum dot containing a ligand. The third light-emitting material is a third quantum dot containing a ligand.

11. The display device according to claim 10, characterized in that The outer diameter of the shell of the second quantum dot is smaller than the outer diameter of the shell of the first quantum dot and the outer diameter of the shell of the third quantum dot.

12. The display device according to claim 11, characterized in that The second quantum dot emits blue light.

13. The display device according to any one of claims 1, 2, 11 to 12, characterized in that It further includes an edge mask, and the edge mask fills between each of the plurality of first electrodes and covers the edges of each of the plurality of first electrodes.

14. A display device, characterized in that, Having: A substrate; A plurality of island-shaped first electrodes formed on one side surface of the substrate; A first light-emitting layer, including a first light-emitting material and a resin, and formed on the one side surface in a manner of overlapping with a part of the first electrodes among the plurality of first electrodes; A second light-emitting layer, which is composed of a second light-emitting material, and formed on the one side surface in a manner of overlapping with another part of the first electrodes among the plurality of first electrodes; A first bank, formed in a frame shape or including two opposite partition walls dividing an inner area and an outer area, The second light-emitting layer is disposed inside the first bank in a manner of contacting the inner side surface of the first bank, The first light-emitting layer is disposed outside the first bank, The display device further has: A third light-emitting layer, which contains a third light-emitting material, and formed on the one side surface in a manner of overlapping with yet another part of the first electrodes among the plurality of first electrodes; A second bank, formed in a frame shape or including two opposite partition walls dividing an inner area and an outer area, The first light-emitting layer is disposed outside the second bank, The third light-emitting layer is disposed inside the second bank in a manner of contacting the inner side surface of the second bank, The first bank includes: A first layer, the first layer is formed of the same material as the first light-emitting layer; And A second layer, the second layer is formed of the same material as the third light-emitting layer and laminated with the first layer. The upper surface of the layer on the lower side of the first layer and the second layer is higher than the upper surface of the second light-emitting layer.

15. The display device according to claim 14, wherein The second bank is formed of the same layer made of the same material as the first light-emitting layer.

16. The display device according to claim 14, wherein The second bank is formed of a resin material different from that of the first light-emitting layer.

17. The display device according to claim 16, wherein An upper bank is provided on at least one of the first bank and the second bank, and the upper bank is formed of the same layer made of the same material as the first light-emitting layer.

18. The display device according to any one of claims 14 to 17, wherein The central wavelength of the light emitted by the first light-emitting layer is longer than the central wavelengths of the light emitted by the second light-emitting layer and the light emitted by the third light-emitting layer.

19. A manufacturing method of a display device, characterized in that, Comprising: A first light-emitting layer forming step of forming a first light-emitting layer in a plurality of first regions on one surface of a substrate based on photolithography; A second light-emitting layer forming step of, after the first light-emitting layer forming step, not forming a second light-emitting layer in the plurality of first regions, but forming a second light-emitting layer only in a plurality of second regions on the same surface different from the plurality of first regions; A third light-emitting layer forming step of, after the first light-emitting layer forming step, not forming a third light-emitting layer in the plurality of first regions and the plurality of second regions, but forming a third light-emitting layer only in a plurality of third regions on the same surface different from the plurality of first regions and the plurality of second regions; And Before the second light-emitting layer forming step, a bank forming step is performed to form a plurality of first banks respectively surrounding the plurality of second regions, The first bank includes: A first layer formed of the same material as the first light-emitting layer; And A second layer formed of the same material as the third light-emitting layer and laminated with the first layer, The upper surface of the layer on the lower side of the first layer and the second layer is higher than the upper surface of the second light-emitting layer.

20. The manufacturing method of the display device according to claim 19, wherein It further includes a third light-emitting layer forming step of forming a third light-emitting layer in a plurality of third regions on the same surface different from the plurality of first regions and the plurality of second regions by using photolithography, The third light-emitting layer forming step is performed before the second light-emitting layer forming step.

21. The manufacturing method of the display device according to claim 19, wherein It further includes a third light-emitting layer forming step of, after the first light-emitting layer forming step, not forming a third light-emitting layer in the plurality of first regions and the plurality of second regions, but forming a third light-emitting layer only in a plurality of third regions on the same surface different from the plurality of first regions and the plurality of second regions.

22. The manufacturing method of the display device according to claim 20, characterized in that, It further includes the following steps, and the following steps are performed before the first light-emitting layer forming step, the second light-emitting layer forming step, and the third light-emitting layer forming step: First electrode formation step: forming a plurality of island-shaped first electrodes on one surface of the substrate; Edge mask formation step: forming an edge mask that fills the spaces between the plurality of first electrodes and covers the edges of the plurality of first electrodes; Dam formation step: forming a plurality of first dams on a part of the edge mask, each of which surrounds a corresponding one of the plurality of second regions; In each of the first light-emitting layer formation step and the third light-emitting layer formation step, forming the first light-emitting layer and the third light-emitting layer outside each of the plurality of first dams; In the second light-emitting layer formation step, forming the second light-emitting layer inside each of the plurality of first dams in contact with the inner side surfaces of the plurality of first dams.

23. The manufacturing method of the display device according to claim 21, characterized in that, It further includes the following steps, and the following steps are performed before the first light-emitting layer formation step, the second light-emitting layer formation step, and the third light-emitting layer formation step: First electrode formation step: forming a plurality of island-shaped first electrodes on one surface of the substrate; Edge mask formation step: forming an edge mask that fills the spaces between the plurality of first electrodes and covers the edges of the plurality of first electrodes; Dam formation step: forming a plurality of first dams on a part of the edge mask, each of which surrounds a corresponding one of the plurality of second regions, and forming a plurality of second dams on the edge mask, each of which surrounds a corresponding one of the plurality of third regions; In the first light-emitting layer formation step, forming the first light-emitting layer outside each of the plurality of first dams and the plurality of second dams; In the second light-emitting layer formation step, forming the second light-emitting layer inside each of the plurality of first dams in contact with the inner side surfaces of the plurality of first dams; In the third light-emitting layer formation step, forming the third light-emitting layer inside each of the plurality of second dams in contact with the inner side surfaces of the plurality of second dams.

24. The method for manufacturing a display device according to claim 22 or 23, characterized in that The edge mask formation step and the dam formation step are one step.

25. The manufacturing method of a display device according to claim 20, characterized in that, It further includes the following steps, and the following steps are performed before the first light-emitting layer formation step, the second light-emitting layer formation step, and the third light-emitting layer formation step: First electrode formation step: forming a plurality of island-shaped first electrodes on one surface of the substrate; Edge mask formation step: forming an edge mask that fills the spaces between the plurality of first electrodes and covers the edges of the plurality of first electrodes; In the first light-emitting layer formation step and the third light-emitting layer formation step, respectively forming the first light-emitting layer and the third light-emitting layer, and forming a plurality of first dams on a part of the edge mask, each of which surrounds a corresponding one of the plurality of second regions; In the second light-emitting layer formation step, forming the second light-emitting layer inside each of the plurality of first dams in contact with the inner side surfaces of the plurality of first dams.

26. The manufacturing method of the display device according to claim 21, characterized in that, It further includes the following steps, and the following steps are performed before the first light-emitting layer formation step, the second light-emitting layer formation step, and the third light-emitting layer formation step: First electrode formation step, forming a plurality of island-shaped first electrodes on one side surface of the substrate; Edge mask formation step, forming an edge mask that fills between each of the plurality of first electrodes and covers the edges of each of the plurality of first electrodes, In the first light-emitting layer formation step, forming the first light-emitting layer, and forming a plurality of first dams respectively surrounding the plurality of second regions and a plurality of second dams respectively surrounding the plurality of third regions on a part of the edge mask, In the second light-emitting layer formation step, forming the second light-emitting layer inside each of the plurality of first dams in a manner that contacts the inner side surfaces of each of the plurality of first dams, In the third light-emitting layer formation step, forming the third light-emitting layer inside each of the plurality of second dams in a manner that contacts the inner side surfaces of each of the plurality of second dams.

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