An ultra-wideband 6-bit mmic phase shifter

Abstract

The application discloses a kind of ultra-wideband 6-bit MMIC phase shifters, including 5.625° phase shift circuit, 22.5° phase shift circuit, 11.25° phase shift circuit, 45° phase shift circuit, 180° phase shift circuit and 90° phase shift circuit in turn cascaded;Or including 5.625° phase shift circuit, 22.5° phase shift circuit, 11.25° phase shift circuit, 90° phase shift circuit, 180° phase shift circuit and 45° phase shift circuit in turn cascaded.The 45°, 90° phase shift unit of the application adopts a kind of reflection phase shift topology based on short-circuit branch, realizes relatively wide bandwidth, and the device used in design is less and simple in design, and simultaneously optimize the cascade order, so that performance reaches better echo and matching performance in limited kind of arrangement order.

Description

Technical Field

[0001] This invention belongs to the field of phase shifter technology and relates to an ultra-wideband 6-bit MMIC (monolithic microwave integrated circuit) phase shifter, which can be applied to phased array radar, mobile communication, digital microwave communication, instrumentation, smart antenna systems and other fields. Background Technology

[0002] Modern radar technology is evolving towards ultra-wideband, fast antenna scanning, multi-beam transmission, multi-target tracking, and powerful data processing systems, leading to the development of phased array systems. Applying phased array systems to communication systems can improve system capacity and data transmission efficiency, enabling more precise target tracking and accurate azimuth information. Large bandwidth and high power capacity can increase the maximum effective range of the radar. Phased array systems are composed of a large number of independently operating transceiver (T / R) modules, so these T / R modules must be small in size, highly integrated, lightweight, and reliable. As the core component of the T / R module, the phase shifter's performance directly affects the phased array system's target search capability; therefore, research on ultra-wideband, high-performance phase shifters is of great significance.

[0003] Existing digital phase shifters, such as CN201010555904.2, are cascaded sequentially according to the magnitude of the phase shift, i.e., 180°+90°+45°+22.5°+11.25°+5.625°. Although this is advantageous for DC layout, it is difficult to achieve good echo and matching performance, and there is room for performance improvement.

[0004] Currently, the main types of MMIC phase shifter circuits for achieving large phase shifts are high-pass / low-pass filter type and reflective type. High-pass / low-pass filter type can achieve large phase shifts, such as CN109194303A. However, since high-pass / low-pass filters are inherently narrowband, in ultra-wideband designs, port matching and phase shift accuracy can only be improved by increasing the filter order, leading to an increase in the number of circuit components. Lange couplers have a wideband 90° flat phase shift characteristic, therefore, coupler-based reflective types are easy to design for large phase shifts over a wide bandwidth, and their design size decreases rapidly as the application frequency increases, showing great application prospects. Patent document CN102148416A uses a large number of reflective structures for ultra-wideband design, but the reflective structures used are complex and have many components, which is not conducive to unit design and miniaturization. Summary of the Invention

[0005] To overcome the shortcomings of the prior art and solve the problem of miniaturization, the present invention aims to provide an ultra-wideband 6-bit MMIC phase shifter, whose 45° and 90° phase shifting units adopt a reflection phase shifting topology based on short-circuit stubs, achieving a wider bandwidth, requiring fewer components and having a simpler design. At the same time, the cascading sequence is optimized, enabling better echo and matching performance in a limited number of permutation sequences.

[0006] To achieve the above objectives, the technical solution adopted by the present invention is as follows:

[0007] An ultra-wideband 6-bit MMIC phase shifter includes cascaded 5.625° phase shift circuit, 22.5° phase shift circuit, 11.25° phase shift circuit, 45° phase shift circuit, 180° phase shift circuit and 90° phase shift circuit; or includes cascaded 5.625° phase shift circuit, 22.5° phase shift circuit, 11.25° phase shift circuit, 90° phase shift circuit, 180° phase shift circuit and 45° phase shift circuit.

[0008] The ultra-wideband 6-bit MMIC phase shifter of this invention operates in the 6-18 GHz frequency band.

[0009] In one embodiment, the 5.625° phase shift circuit adopts a switched LC structure, the 11.25° phase shift circuit adopts an embedded switch structure, the 22.5° phase shift circuit adopts an embedded switch structure with capacitor compensation, and the 180° phase shift circuit adopts a T-junction-Lange coupler structure.

[0010] In one embodiment, both the 45° phase-shifting circuit and the 90° phase-shifting circuit employ a reflective structure based on a short-circuit stub.

[0011] Compared with the prior art, the beneficial effects of the present invention are:

[0012] 1. The reflective structure based on short-circuit stubs is simple and compact, uses fewer components, and has stable performance. Phase change is achieved by changing the transmission line parameters, eliminating the lumped elements in the phase shifting network of conventional reflective phase shifters.

[0013] 2. This invention no longer uses a sequential cascading method. Instead, it selects units with excellent echo performance and places them at the input and output ends of the phase shifter to reduce system energy reflection. It also makes full use of the neutralizing effect of echo performance by placing reflective structural units with better echo performance on both sides of phase shifting units with poorer echo performance, thereby improving the matching degree and the overall echo performance of the phase shifter. At the same time, it alleviates the deterioration of phase shifting accuracy caused by unit cascading. Attached Figure Description

[0014] Figure 1 This is a schematic diagram of the principle of the present invention.

[0015] Figure 2 This is a schematic diagram of the 5.625° phase shift circuit of the present invention.

[0016] Figure 3 This is a schematic diagram of the reflective structure circuit based on short-circuit stubs of the present invention.

[0017] Figure 4 This is a schematic diagram of the 11.25° phase shift circuit of the present invention.

[0018] Figure 5 This is a schematic diagram of the 22.5° phase-shifting circuit of the present invention.

[0019] Figure 6 This is a schematic diagram of the 180° phase-shifting circuit of the present invention. Detailed Implementation

[0020] To make the objectives, technical solutions, and advantages of this invention clearer, the invention will be further described in detail below with reference to embodiments. It should be understood that the specific embodiments described herein are merely illustrative and not intended to limit the invention.

[0021] refer to Figure 1 As shown, this invention relates to an ultra-wideband 6-bit MMIC phase shifter, comprising cascaded 5.625°, 22.5°, 11.25°, 45°, 180°, and 90° phase shift circuits, wherein the 45° and 90° phase shift circuits can be interchanged, i.e., the 5.625°, 22.5°, 11.25°, 90°, 180°, and 45° phase shift circuits are cascaded sequentially. In other words, the cascading sequence of the ultra-wideband 6-bit MMIC phase shifter of this invention can be 5.625°+22.5°+11.25°+45°+180°+90°, or 5.625°+22.5°+11.25°+90°+180°+45°.

[0022] It is easy to understand that the present invention may also consist only of the phase shifting circuits described above, without including other components.

[0023] The ultra-wideband 6-bit MMIC phase shifter of the present invention operates in the 6-18 GHz frequency band, and its digital phase shift step value is 5.625°, thus enabling 64 phase shift state switching in the range of 0° to 360°.

[0024] The cascading sequence designed in this invention fully considers the echo neutralization effect between units and the fusion degree of different units. This design can improve the overall echo performance of the phase shifter and alleviate the deterioration of phase shifting accuracy caused by cascading. This invention first designs each phase shifting unit circuit separately. After the design of each unit circuit is completed, a cascading sequence of 5.625°+22.5°+11.25°+45°+180°+90° or 5.625°+22.5°+11.25°+90°+180°+45° is adopted to realize an ultra-wideband six-bit MMIC digital phase shifter.

[0025] In one embodiment of the present invention, the 5.625° phase shift circuit adopts a switched LC structure, as referenced. Figure 2 The diagram illustrates a specific circuit for this LC switch structure, comprising a first field-effect transistor (FET) M1, a second FET M2, a first inductor L1, and a first capacitor C1. The first inductor L1 is connected between the source and drain of the first FET M1, and the first capacitor C1 is connected between the source and drain of the second FET M2. The common terminal of the source of the first FET M1 and the first inductor L1 is connected to the signal input terminal of the circuit. The common terminal of the drain of the first FET M1 and the first inductor L1 is connected to the common terminal of the source of the second FET M2 and the first capacitor C1. The common terminal of the drain of the second FET M2 and the first capacitor C1 is connected to the signal output terminal of the circuit. In various embodiments of this invention, a GaAs PHEMT type gallium arsenide pseudomodulation doped heterojunction field-effect transistor is used as the switch. When it is on, it is equivalent to a very small on-resistance, and when it is off, it is equivalent to a very small isolation capacitor. Other field-effect transistors or other switching transistors can also meet the requirements of this invention.

[0026] The working principle of the switching LC circuit used to achieve a 5.625° phase shift in this invention is described as follows: Switch M1 and switch M2 work asynchronously, that is, when switch M1 is on, switch M2 is off, and when switch M2 is on, switch M1 is off. Phase shift is achieved by switching different signal paths through the applied voltage, corresponding to the phase-shifted state and the reference state of the unit, and the two states can be interchanged. The capacitor has the effect of phase boosting, and the inductor has the effect of phase lag. When M1 is on and M2 is off, the circuit is equivalent to a small on-resistance connected in series with the capacitor. When M1 is off and M2 is on, the circuit is equivalent to a small on-resistance connected in series with the inductor. Phase shift is achieved through the different effects of the capacitor and the inductor on the phase. This structure is simple in design and occupies a small area. Since this unit is used as the input of the phase shifter, its return and matching performance requirements are high. Using two reactive components is beneficial for port matching in the ultra-wideband range and improves the return performance of the unit's input and output ends.

[0027] In one embodiment of the present invention, both the 45° phase-shifting circuit and the 90° phase-shifting circuit adopt a reflective structure based on a short-circuit stub, as referenced. Figure 3As shown, a specific circuit of the reflective structure based on a short-circuit stub is presented, which includes a first Lange coupler Lan1, a third field-effect transistor M3, a fourth field-effect transistor M4, a first transmission line TL1, a second transmission line TL2, a third transmission line TL3, a fourth transmission line TL4, a second capacitor C2, and a third capacitor C3. The source of the third field-effect transistor M3 is connected to the through terminal of the first Lange coupler Lan1 via the second capacitor C2, and the drain of the third field-effect transistor M3 is grounded via the second transmission line TL2. The source of the fourth field-effect transistor M4 is connected to the coupling terminal of the Lange coupler Lan1 via the third capacitor C3, and the drain of the fourth field-effect transistor M4 is grounded via the fourth transmission line TL4. The common terminal of the third field-effect transistor M3 and the second capacitor C2 is connected to the first transmission line TL1, and the common terminal of the fourth field-effect transistor M4 and the third capacitor C3 is connected to the third transmission line TL3. The input terminal of the Lange coupler Lan1 is connected to the input, and the isolation terminal is connected to the output.

[0028] The working principle of the reflective phase-shifting circuit based on a short-circuit stub used in this invention to achieve 45° and 90° phase shifts is described as follows: Switches M3 and M4 in this circuit operate synchronously, meaning they are simultaneously on and off, corresponding to the reference state and phase-shifting state of the corresponding unit, and these two states can be interchanged. The signal enters through the Lan1 input terminal and is divided into two branches: a through-path branch and a coupled-path branch. When switches M3 and M4 are off, the through-path signal is reflected through capacitor C2 and transmission line TL1, while the coupled-path signal is reflected through capacitor C3 and transmission line TL3. When switches M3 and M4 are on, the through-path signal is reflected through capacitor C2, transmission lines TL1 and TL2, while the coupled-path signal is reflected through capacitor C3, transmission lines TL3 and TL4. The signals reflected from the through-path and coupled-path branches are combined and output at the isolation terminal, and by switching, two signals with similar phase frequency change slopes are output, thus achieving constant phase shift within a wide bandwidth. This reflective phase-shifting structure is suitable for broadband large phase-shifting unit design, with few components and a simple structure. The key to its design lies in the reflective network design of the through-end and coupling end. For the reflective network in this invention, let the reactance introduced by the capacitor be 1 / jωC, and let it be equal to Z. C The reactance introduced by the short-circuit is Z. L Given a total resistive loss of R, the network reflection coefficient can be calculated as follows:

[0029]

[0030] Reflection coefficient phase angle:

[0031]

[0032] Where Z C =Z LAt this time, series resonance occurs, ∠Γ=0°. According to the characteristics of the arctangent function, the theoretical reflection phase of the network designed in this invention is ∠Γ∈(-90°,90°). During switch switching, the main variable of the reflection network is the reactance Z introduced by the transmission line. L This means that the reflection phase is changed by altering the transmission line. The capacitance also affects the reflection coefficient and phase angle, but it is not considered a variable and is mainly used for port reflection matching. This design relies on the Lange coupler, which can achieve good return matching performance over a wide bandwidth. Therefore, it is placed at the output of the phase shifter to improve the phase shifter's return performance, and the 180° phase shifting unit is arranged in a surrounding manner to neutralize and optimize its return performance.

[0033] In one embodiment of the present invention, the 11.25° phase shift circuit employs an embedded switch structure, as referenced. Figure 4 As shown, a specific circuit of this embedded switch structure is given, which includes a fifth field-effect transistor M5, a sixth field-effect transistor M6, a seventh field-effect transistor M7, a fifth transmission line TL5, a sixth transmission line TL6, and a second inductor L2. The source of the fifth field-effect transistor M5 is connected to one end of the fifth transmission line TL5. The other end of the fifth transmission line TL5 is connected to one end of the sixth transmission line TL6. The other end of the sixth transmission line TL6 is connected to the drain of the fifth field-effect transistor M5. The common terminal of the fifth transmission line TL5 and the sixth transmission line TL6 is connected to the drain of the sixth field-effect transistor M6. The second inductor L2 is connected between the source and drain of the seventh field-effect transistor M7. The common terminal of the source of the seventh field-effect transistor M7 and the second inductor L2 is grounded. The drain of the seventh field-effect transistor M7 and the common terminal of the second inductor L2 are connected to the source of the sixth field-effect transistor M6. The source of the fifth field-effect transistor M5 and the common terminal of the fifth transmission line TL5 are connected to the signal input terminal of the circuit. The drain of the fifth field-effect transistor M5 and the common terminal of the sixth transmission line TL6 are connected to the signal output terminal of the circuit.

[0034] In one embodiment of the present invention, the 22.5° phase-shifting circuit employs an embedded switch structure with capacitor compensation, as referenced. Figure 5 As shown, a specific circuit of this embedded switch structure with capacitor compensation is presented, namely in Figure 4Based on the topology, a capacitor C4 is connected between the source and drain of the intermediate switch M9, while the rest remains unchanged. Specifically, it includes the eighth field-effect transistor M8, the ninth field-effect transistor M9, the tenth field-effect transistor M10, the seventh transmission line TL7, the eighth transmission line TL8, the third inductor L3, and the fourth capacitor C4. The source of the eighth field-effect transistor M8 is connected to one end of the seventh transmission line TL7, the other end of the seventh transmission line TL7 is connected to one end of the eighth transmission line TL8, the other end of the eighth transmission line TL8 is connected to the drain of the eighth field-effect transistor M8, the common terminal of the seventh transmission line TL7 and the eighth transmission line TL8 is connected to the drain of the ninth field-effect transistor M9, and the fourth capacitor C4 is connected to... The source and drain of the ninth field-effect transistor M9 are connected together, and the third inductor L3 is connected between the source and drain of the tenth field-effect transistor M10. The common terminal of the source of the tenth field-effect transistor M10 and the third inductor L3 is grounded. The common terminal of the drain of the tenth field-effect transistor M10 and the third inductor L3 is connected to the common terminal of the source of the ninth field-effect transistor M9 and the fourth capacitor C4. The common terminal of the source of the eighth field-effect transistor M8 and the seventh transmission line TL7 is connected to the signal input terminal of the circuit. The common terminal of the drain of the eighth field-effect transistor M8 and the eighth transmission line TL8 is connected to the signal output terminal of the circuit.

[0035] The working principle of the embedded switching topology with capacitor compensation used in this invention to achieve 11.25° and 22.5° phase shift is described as follows: Figure 4 Taking the 11.25° phase-shifting circuit as an example, switches M6 and M7 operate asynchronously, while switching M5 operates synchronously. The design requires the equivalent turn-off capacitor of switch M7 to resonate in parallel with inductor L2 when M7 is off. When M5 and M6 are on and M7 is off, the signal is output through the on-resistance. When M5 and M6 are off and M7 is on, the signal passes through a low-pass network consisting of transmission line TL5, the turn-off capacitor of parallel switch M6, and transmission line TL6. For 22.5°, the low-pass network consists of transmission line TL7, the turn-off capacitor of parallel switch M9, compensation capacitor C4, and transmission line TL8, resulting in phase shift. The compensation capacitor is added for 22.5° because the phase shift requirement is greater than that of the 11.25° unit. A three-element low-pass network can no longer meet the requirements over a wider frequency band, so a compensation capacitor is added to increase the order. In the cascaded design, the topologies of the 11.25° and 22.5° units are similar. The ninth field-effect transistor M9 and the tenth field-effect transistor M10 work asynchronously and synchronously with the eighth field-effect transistor M8. The phase shift is similar, and the cascade integration is high. Therefore, they are placed together in the cascaded design.

[0036] In one embodiment of the present invention, the 180° phase-shifting circuit adopts a T-junction-Lange coupler structure, as referenced. Figure 6As shown, a specific circuit of this T-junction-Lange coupler structure is given, which includes a second Lange coupler Lan2, an eleventh field-effect transistor M11, a twelfth field-effect transistor M12, a thirteenth field-effect transistor M13, a fourteenth field-effect transistor M14, a fifteenth field-effect transistor M15, a sixteenth field-effect transistor M16, a ninth transmission line TL9, a tenth transmission line TL10, and an eleventh transmission line TL11. The source of the fifteenth field-effect transistor M15 is grounded. The drain of the fifteenth field-effect transistor M15 is connected to the source of the thirteenth field-effect transistor M15. The source of the eleventh field-effect transistor M11 is connected to the common terminal of the source of the thirteenth field-effect transistor M13 and the drain of the fifteenth field-effect transistor M15. The drain of the eleventh field-effect transistor M11 is connected to the input terminal of the second Lange coupler Lan2. The through terminal and coupling terminal of the second Lange coupler Lan2 are grounded. The isolation terminal is connected to the source of the twelfth field-effect transistor M12. The source of the sixteenth field-effect transistor M16 is connected to the drain of the fourteenth field-effect transistor M14. The drain of the sixteenth field-effect transistor M16 is grounded. The common terminal of the source of the sixteenth field-effect transistor M16 and the drain of the fourteenth field-effect transistor M14 is connected to the twelfth field-effect transistor M15. 2. The source of the fourteenth field-effect transistor M14 is connected to one end of the tenth transmission line TL10. The other end of the tenth transmission line TL10 is connected to one end of the ninth transmission line TL9. The other end of the ninth transmission line TL9 is connected to the drain of the thirteenth field-effect transistor M13. The common terminal of the tenth transmission line TL10 and the ninth transmission line TL9 is connected to one end of the eleventh transmission line TL11. The other end of the eleventh transmission line TL11 is grounded. The common terminal of the source of the eleventh field-effect transistor M11, the source of the thirteenth field-effect transistor M13, and the drain of the fifteenth field-effect transistor M15 is connected to the signal input terminal of the circuit. The common terminal of the drain of the twelfth field-effect transistor M12, the drain of the fourteenth field-effect transistor M14, and the source of the sixteenth field-effect transistor M16 is connected to the signal output terminal of the circuit.

[0037] The working principle of the T-junction-Lange coupler structure used in this invention to achieve 180° phase shift is as follows: Switch M11 works synchronously with switches M12, M15, and M16, and asynchronously with switches M13 and M14. When switches M11, M12, M15, and M16 are on, and switches M13 and M14 are off, the signal is output through the LAN2 input terminal, reflected at the LAN2 isolation terminal, and finally output through the unit output terminal. When switches M11, M12, M15, and M16 are off, and switches M13 and M14 are on, the signal passes through the T-shaped microstrip stub and is finally output through the unit output terminal. The LAN2 line can be equivalent to a bandpass, which has a phase-raising effect. The T-junction can be equivalent to a low-pass, which has a phase-lag effect. Due to insufficient switch isolation in the process used, there is resonance in the operating frequency band when switches M13 and M14 are off. Therefore, grounding switches M15 and M16 are added to enhance isolation. The phase shift of this unit is relatively large, making it difficult to achieve both good phase shift accuracy and echo performance in the ultra-wideband range. Therefore, in the cascade design, two phase shift units based on the reflection topology of the short-circuit stub are used to surround the design to achieve the purpose of neutralizing and optimizing system performance.

[0038] The digital phase shifter of this embodiment adopts a simple design based on a short-circuit stub reflection phase shifting unit, with few components, good performance, and easy miniaturization. At the same time, the cascading order is selected according to the characteristics of each unit, which makes the phase shifter have good echo matching performance.

[0039] The embodiments are merely illustrative of the technical concept of the present invention and should not be construed as limiting the scope of protection of the present invention. Any modifications made to the technical solution based on the technical concept proposed in this invention shall fall within the scope of protection of this invention.

Claims

1. An ultra-wideband 6-bit MMIC phase shifter, characterized in that, It includes cascaded phase-shifting circuits of 5.625°, 22.5°, 11.25°, 45°, 180°, and 90°; or cascaded phase-shifting circuits of 5.625°, 22.5°, 11.25°, 90°, 180°, and 45°. The 5.625° phase shift circuit adopts a switched LC structure, the 11.25° phase shift circuit adopts an embedded switch structure, the 22.5° phase shift circuit adopts an embedded switch structure with capacitor compensation, the 180° phase shift circuit adopts a T-junction-Lange coupler structure, and both the 45° and 90° phase shift circuits adopt a reflective structure based on short-circuit stubs. The reflective structure based on the short-circuit stub includes a first Lange coupler Lan1, a third field-effect transistor M3, a fourth field-effect transistor M4, a first transmission line TL1, a second transmission line TL2, a third transmission line TL3, a fourth transmission line TL4, a second capacitor C2, and a third capacitor C3. The third field-effect transistor M3 and the fourth field-effect transistor M4 operate synchronously. The source of the third field-effect transistor M3 is connected to the through terminal of the first Lange coupler Lan1 via the second capacitor C2, and the drain of the third field-effect transistor M3 is grounded via the second transmission line TL2. The source of the fourth field-effect transistor M4 is connected to the coupling terminal of the Lange coupler Lan1 via the third capacitor C3, and the drain of the fourth field-effect transistor M4 is grounded via the fourth transmission line TL4. The common terminal of the third field-effect transistor M3 and the second capacitor C2 is connected to the first transmission line TL1, and the common terminal of the fourth field-effect transistor M4 and the third capacitor C3 is connected to the third transmission line TL3. The input terminal of the Lange coupler Lan1 is connected to the input, and the isolation terminal is connected to the output.

2. The ultra-wideband 6-bit MMIC phase shifter according to claim 1, characterized in that, The switching LC structure includes a first field-effect transistor M1, a second field-effect transistor M2, a first inductor L1, and a first capacitor C1; wherein the first field-effect transistor M1 and the second field-effect transistor M2 operate asynchronously; the first inductor L1 is connected between the source and drain of the first field-effect transistor M1, the first capacitor C1 is connected between the source and drain of the second field-effect transistor M2, the common terminal of the source of the first field-effect transistor M1 and the first inductor L1 is connected to the signal input terminal of the circuit, the common terminal of the drain of the first field-effect transistor M1 and the first inductor L1 is connected to the common terminal of the source of the second field-effect transistor M2 and the first capacitor C1, and the common terminal of the drain of the second field-effect transistor M2 and the first capacitor C1 is connected to the signal output terminal of the circuit.

3. The ultra-wideband 6-bit MMIC phase shifter according to claim 1, characterized in that, The embedded switch structure includes a fifth field-effect transistor M5, a sixth field-effect transistor M6, a seventh field-effect transistor M7, a fifth transmission line TL5, a sixth transmission line TL6, and a second inductor L2. The sixth field-effect transistor M6 operates asynchronously with the seventh field-effect transistor M7 and synchronously with the fifth field-effect transistor M5. The source of the fifth field-effect transistor M5 is connected to one end of the fifth transmission line TL5, the other end of the fifth transmission line TL5 is connected to one end of the sixth transmission line TL6, and the other end of the sixth transmission line TL6 is connected to the drain of the fifth field-effect transistor M5. The fifth transmission line TL5... The common terminal of the sixth transmission line TL6 is connected to the drain of the sixth field-effect transistor M6. The second inductor L2 is connected between the source and drain of the seventh field-effect transistor M7. The common terminal of the source of the seventh field-effect transistor M7 and the second inductor L2 is grounded. The common terminal of the drain of the seventh field-effect transistor M7 and the second inductor L2 is connected to the source of the sixth field-effect transistor M6. The common terminal of the source of the fifth field-effect transistor M5 and the fifth transmission line TL5 is connected to the signal input terminal of the circuit. The common terminal of the drain of the fifth field-effect transistor M5 and the sixth transmission line TL6 is connected to the signal output terminal of the circuit.

4. The ultra-wideband 6-bit MMIC phase shifter according to claim 1, characterized in that, The embedded switch structure with capacitance compensation includes an eighth field-effect transistor M8, a ninth field-effect transistor M9, a tenth field-effect transistor M10, a seventh transmission line TL7, an eighth transmission line TL8, a third inductor L3, and a fourth capacitor C4. The ninth field-effect transistor M9 operates asynchronously with the tenth field-effect transistor M10 and synchronously with the eighth field-effect transistor M8. The source of the eighth field-effect transistor M8 is connected to one end of the seventh transmission line TL7, the other end of the seventh transmission line TL7 is connected to one end of the eighth transmission line TL8, and the other end of the eighth transmission line TL8 is connected to the drain of the eighth field-effect transistor M8. The seventh transmission line TL7 and the eighth transmission line TL8... The common terminal of the circuit is connected to the drain of the ninth field-effect transistor M9. The fourth capacitor C4 is connected between the source and drain of the ninth field-effect transistor M9. The third inductor L3 is connected between the source and drain of the tenth field-effect transistor M10. The common terminal of the source of the tenth field-effect transistor M10 and the third inductor L3 is grounded. The common terminal of the drain of the tenth field-effect transistor M10 and the third inductor L3 is connected to the common terminal of the source of the ninth field-effect transistor M9 and the fourth capacitor C4. The common terminal of the source of the eighth field-effect transistor M8 and the seventh transmission line TL7 is connected to the signal input terminal of the circuit. The common terminal of the drain of the eighth field-effect transistor M8 and the eighth transmission line TL8 is connected to the signal output terminal of the circuit.

5. The ultra-wideband 6-bit MMIC phase shifter according to claim 1, characterized in that, The T-junction-Lange coupler structure includes a second Lange coupler Lan2, an eleventh field-effect transistor M11, a twelfth field-effect transistor M12, a thirteenth field-effect transistor M13, a fourteenth field-effect transistor M14, a fifteenth field-effect transistor M15, a sixteenth field-effect transistor M16, a ninth transmission line TL9, a tenth transmission line TL10, and an eleventh transmission line TL11; wherein the eleventh field-effect transistor M11 is connected to the twelfth field-effect transistor M12, the fifteenth field-effect transistor M15, the sixteenth field-effect transistor M16, a ninth transmission line TL9, a tenth transmission line TL10, and an eleventh transmission line TL11; The transistor M16 operates synchronously, but asynchronously with the thirteenth field-effect transistor M13 and the fourteenth field-effect transistor M14. The source of the fifteenth field-effect transistor M15 is grounded, and its drain is connected to the source of the thirteenth field-effect transistor M13. The source of the eleventh field-effect transistor M11 is connected to the common terminal of the source of the thirteenth field-effect transistor M13 and the drain of the fifteenth field-effect transistor M15. The drain of the eleventh field-effect transistor M11 is connected to the input terminal of the second Lange coupler Lan2. The second Lange coupler Lan2 is directly connected to... The on / off terminal and coupling terminal are grounded. The isolation terminal is connected to the source of the twelfth MOSFET M12. The source of the sixteenth MOSFET M16 is connected to the drain of the fourteenth MOSFET M14. The drain of the sixteenth MOSFET M16 is grounded. The common terminal of the source of the sixteenth MOSFET M16 and the drain of the fourteenth MOSFET M14 is connected to the drain of the twelfth MOSFET M12. The source of the fourteenth MOSFET M14 is connected to one end of the tenth transmission line TL10. The other end of the tenth transmission line TL10 is connected to one end of the ninth transmission line TL9. The other end of the ninth transmission line TL9 is connected to... Connect the drain of the thirteenth field-effect transistor M13. Connect the common terminal of the tenth transmission line TL10 and the ninth transmission line TL9 to one end of the eleventh transmission line TL11. Ground the other end of the eleventh transmission line TL11. Connect the common terminal of the source of the eleventh field-effect transistor M11, the source of the thirteenth field-effect transistor M13, and the drain of the fifteenth field-effect transistor M15 to the signal input terminal of the circuit. Connect the common terminal of the drain of the twelfth field-effect transistor M12, the drain of the fourteenth field-effect transistor M14, and the source of the sixteenth field-effect transistor M16 to the signal output terminal of the circuit.

6. The ultra-wideband 6-bit MMIC phase shifter according to claim 1, characterized in that, The ultra-wideband 6-bit MMIC phase shifter operates in the 6–18 GHz frequency band.

7. The ultra-wideband 6-bit MMIC phase shifter according to claim 1, characterized in that, The field-effect transistor is a PHEMT transistor.

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