Apparatus and method for supplying chemical liquid and substrate processing apparatus

Abstract

Provided is a device for supplying a chemical liquid, the device including: a storage tank in which a chemical liquid is stored; a discharge line through which the chemical liquid stored in the storage tank is discharged; a liquid level tube connected to the storage tank to check a water level of the chemical liquid in the storage tank and receive the chemical liquid at the same water level as the water level of the chemical liquid in the storage tank; and a controller for controlling a first valve installed in the discharge line, wherein one end of the liquid level tube is connected to an upper space of the storage tank and the other end is connected to the discharge line.

Description

Technical Field

[0001] This invention relates to a substrate processing apparatus and a substrate processing method. Background Technology

[0002] Typically, in the manufacturing of flat panel display devices or semiconductors, various processes are performed during the handling of glass substrates or wafers, such as photoresist coating, development, etching, and ashing. Within each process, a wet cleaning process using chemical liquids or deionized water is performed to remove various contaminants adhering to the substrate, followed by a drying process to remove any remaining chemical liquids or deionized water from the substrate surface.

[0003] Recently, an etching process has been implemented to selectively remove silicon nitride and silicon oxide layers using chemicals (such as phosphoric acid) applied at high temperatures. In this substrate processing using high-temperature chemicals, chemical treatment, rinsing, and drying operations are performed sequentially. During the chemical treatment, chemicals for etching thin films formed on the substrate or removing foreign matter are supplied to the substrate, and during the rinsing operation, a rinsing solution (such as pure water) is supplied to the substrate.

[0004] As described above, a chemical liquid supply device is installed in the substrate processing apparatus for supplying and circulating various liquid chemicals (hereinafter collectively referred to as chemical liquids). The chemical liquid supply device has a structure in which chemical liquids are supplied to the substrate processing unit from a chemical liquid tank storing the chemical liquids using a pump or the like, and used chemical liquids are recycled back to the chemical liquid tank. The chemical liquid tanks are mostly located below the facility frame of the substrate processing apparatus.

[0005] Generally, various types of sensors can be used to measure the water level of chemical liquids stored in chemical liquid tanks. Depending on whether the chemical liquid is in contact with the target being measured, the method of measuring water level using sensors can be divided into contact measurement methods and non-contact measurement methods.

[0006] In contact measurement methods, in the presence of toxic or corrosive chemical liquids, the exposed parts of the sensor are corroded, impurities are absorbed into the chemical liquid, purity is reduced, and harmful components of the chemical liquid are exposed, which may lead to stability problems.

[0007] Therefore, in the case of specific chemical liquids that are highly toxic or corrosive, it is necessary to use non-contact measurement methods that can measure the water level of the chemical liquid without contact with it.

[0008] Figure 10 The figure shows a non-contact liquid level measurement device.

[0009] like Figure 10 As shown, in the non-contact liquid level measuring device 1000, multiple liquid level sensors 1003 are installed at appropriate positions on the liquid level pipe 1002 connecting the upper and lower parts of the chemical liquid tank 1001 to detect the presence of chemical liquid at each position. However, in this method, chemical liquid stagnation occurs in the liquid level pipe 1002. The chemical liquid stagnation in the liquid level pipe 1002 can lead to a particle source during substrate processing.

[0010] In order to remove the residual chemical liquid in the level tube 1002, a full discharge process is required to discharge all the chemical liquid to the tank outlet at predetermined intervals. Therefore, the removal of chemical liquid leads to an increase in chemical liquid consumption. Summary of the Invention

[0011] This invention aims to provide a chemical liquid supply device and method capable of removing chemical liquids retained in a liquid level tube, as well as a substrate processing device.

[0012] The present invention also aims to provide chemical liquid supply apparatus and method that can minimize the amount of chemical liquid waste, as well as substrate processing apparatus.

[0013] The purpose of this invention is not limited thereto, and other purposes not mentioned will be clearly understood by those skilled in the art from the following description.

[0014] An exemplary embodiment of the present invention provides an apparatus for supplying a chemical liquid, the apparatus comprising: a storage tank in which the chemical liquid is stored; a discharge line through which the chemical liquid stored in the storage tank is discharged; a level pipe connected to the storage tank to check the water level of the chemical liquid in the storage tank and to receive the chemical liquid at a water level equal to the water level of the chemical liquid in the storage tank; and a controller for controlling a first valve installed in the discharge line, wherein one end of the level pipe is connected to the upper space of the storage tank and the other end is connected to the discharge line.

[0015] In addition, the controller can keep the first valve open for a predetermined time and execute a residual chemical liquid discharge mode, so that the residual chemical liquid in the liquid level tube is discharged through the discharge pipeline.

[0016] In addition, the device may also include a purge gas supply line for supplying purge gas to the level tube.

[0017] In addition, the purge gas supply line can supply purge gas to pressurize the chemical liquid in the leveling line under the retained chemical liquid discharge mode.

[0018] In addition, the level pipe may include: a vertically extending leveling pipe; a first upper pipe connecting the upper end of the leveling pipe to the upper space of the storage tank; and a second lower pipe connecting the lower end of the leveling pipe to the discharge pipe.

[0019] In addition, the device may also include a purge gas supply line connected to a connection between the first upper line and the leveling line to supply purge gas to the leveling line.

[0020] Furthermore, the device may also include a second valve installed on the first upper pipeline, wherein the controller can control the second valve such that the purge gas supplied through the purge gas supply pipeline is provided only to the leveling pipeline in the stagnant chemical liquid discharge mode.

[0021] In addition, the device may include a branch line that branches off from a predetermined height of the leveling line and connects to the discharge line, and is equipped with a third valve, wherein the controller opens the third valve in the retained chemical liquid discharge mode to discharge the chemical liquid present at a predetermined height or higher of the leveling line.

[0022] In addition, the device may also include a discharge line installed on the top cover of the storage tank, wherein the first upper line is connected to the discharge line.

[0023] Another exemplary embodiment of the present invention provides a method for supplying a chemical liquid by measuring the level of the chemical liquid via a level tube connected to and located on one side of a storage tank, wherein a level sensor is placed on one side of the level tube, the method comprising: a chemical liquid discharge operation, i.e., supplying the chemical liquid stored in the storage tank via a chemical liquid supply line, wherein residual chemical liquid in the level tube is discharged at regular intervals, wherein in the chemical liquid discharge operation, the lower end of the level tube is connected to a discharge line of the storage tank such that when the chemical liquid in the storage tank is discharged, the residual chemical liquid in the level tube is also discharged.

[0024] Furthermore, during the chemical liquid discharge operation, the residual chemical liquid in the level tube is pressurized with purge gas.

[0025] In addition, the valve installed in the upper pipeline of the level tube can be closed so that only the purging gas is supplied to the level tube during the chemical liquid discharge operation.

[0026] Furthermore, in the chemical liquid discharge operation, only the retained chemicals in the level tube are discharged to a level before the water level set in the level tube.

[0027] Another exemplary embodiment of the present invention provides a substrate processing facility, comprising: a processing unit for processing a substrate with a chemical liquid; and a chemical liquid supply unit for supplying the chemical liquid to the processing unit, wherein the chemical liquid supply unit comprises: a storage tank for storing the chemical liquid; a circulation line connected to the storage tank to circulate the chemical liquid in the storage tank; a pump installed in the circulation line; a chemical liquid supply line branching from the circulation line; a discharge line through which the chemical liquid stored in the storage tank is discharged; a level pipe connected to the storage tank to check the water level of the chemical liquid in the storage tank and to receive the chemical liquid at the same water level as the water level of the chemical liquid in the storage tank; and a controller for controlling a first valve installed in the discharge line, wherein one end of the level pipe is connected to the upper space of the storage tank and the other end is connected to the discharge line.

[0028] In addition, the controller can keep the first valve open for a predetermined time and execute a residual chemical liquid discharge mode, so that the residual chemical liquid in the liquid level tube is discharged through the discharge line, and control the pump so that the chemical liquid is circulated through the circulation line even when the residual chemical liquid discharge mode is in progress.

[0029] In addition, the controller may also include a purge gas supply line for supplying purge gas to the level tube, and the purge gas supply line may supply purge gas to pressurize the chemical liquid in the level tube in the retained chemical liquid discharge mode.

[0030] In addition, the level pipe may include: a vertically extending leveling pipe; a first upper pipe connecting the upper end of the leveling pipe to the upper space of the storage tank; and a second lower pipe connecting the lower end of the leveling pipe to the discharge pipe.

[0031] In addition, the substrate processing facility may also include a purge gas supply line, which is connected to the connection between the first upper line and the leveling line to supply purge gas to the leveling line.

[0032] Furthermore, the substrate processing facility may also include a second valve installed on the first upper pipeline, wherein the controller can control the second valve such that the purge gas supplied through the purge gas supply pipeline is provided only to the leveling pipeline in the stagnant chemical liquid discharge mode.

[0033] In addition, the substrate processing facility may also include a branch line that branches off from a predetermined height of the leveling line and connects to the discharge line, and is provided with a third valve, wherein the controller opens the third valve in the residual chemical liquid discharge mode to discharge the chemical liquid present at a predetermined height or higher of the leveling line.

[0034] According to an exemplary embodiment of the present invention, residual chemical liquid in the level tube can be removed without stopping the pump operation of the circulation pipeline.

[0035] According to an exemplary embodiment of the present invention, the amount of chemical waste can be minimized.

[0036] According to an exemplary embodiment of the present invention, chemical liquids can be managed effectively.

[0037] The effects of the present invention are not limited to those described above, and those skilled in the art can clearly understand the effects not mentioned based on this specification and the accompanying drawings. Attached Figure Description

[0038] Figure 1 This is a schematic top plan view of a substrate processing facility having a substrate processing apparatus according to an exemplary embodiment of the present invention.

[0039] Figure 2 yes Figure 1 Top view of the substrate processing apparatus.

[0040] Figure 3 yes Figure 1 A cross-sectional view of the substrate processing apparatus.

[0041] Figure 4 The diagram shows Figure 3 The chemical liquid supply unit shown is shown.

[0042] Figure 5 The diagram shows Figure 4 The main structure of the chemical liquid supply unit shown is illustrated.

[0043] Figure 6 The diagram shows... Figure 5 The process of discharging chemical liquid from the level tube in the chemical liquid supply unit.

[0044] Figure 7The figure shows a first variant example of a chemical liquid supply unit.

[0045] Figure 8 The diagram shows... Figure 7 The process of discharging chemical liquid from the level tube in the chemical liquid supply unit.

[0046] Figure 9 The figure shows a second variant example of a chemical liquid supply unit.

[0047] Figure 10 The figure illustrates a liquid level measuring device for a storage tank in the related art. Detailed Implementation

[0048] In the following description, exemplary embodiments of the invention will be described more fully with reference to the accompanying drawings, in which exemplary embodiments of the invention are illustrated. However, the invention can be implemented in various ways and is not limited to the following exemplary embodiments. In the following description of the invention, detailed descriptions of known functions and configurations included herein are omitted to avoid obscuring the subject matter of the invention. Furthermore, the same reference numerals are used throughout the drawings for components having similar functions and effects.

[0049] Unless otherwise expressly stated to the contrary, the word “comprising” and variations such as “including” or “containing” shall be understood to mean that the said element is included, but not excluding any other element. It should be understood that the terms “comprising” and “having” are intended to indicate the presence of the features, quantities, operations, functions, constituent elements and components or combinations thereof described in the specification, and do not exclude the possibility of the prior presence or addition of one or more other features, quantities, operations, functions, constituent elements and components or combinations thereof.

[0050] Singular expressions used in this article include plural expressions unless they have a clearly contradictory meaning in the context. Therefore, the shape, size, etc. of the elements in the figures may be exaggerated for clarity.

[0051] Terms such as "first" and "second" are used to describe various component elements, but the component elements are not limited by the terms. The terms are only used to distinguish one component element from another. For example, without departing from the scope of the invention, a first component element may be named a second component element, and similarly, a second component element may be named a first component element.

[0052] It should be understood that when a component is described as "connected to" or "connected to" another component, the component may be directly connected to or connected to the other component, but there may also be intermediate components. Conversely, when a component is "directly connected to" or "directly connected to" another component, it should be understood that there are no intermediate components. Other expressions describing the relationship between components, such as "between" and "exactly between" or "adjacent to" and "directly adjacent to," should also be interpreted similarly.

[0053] All terms used herein, including technical or scientific terms, have the same meaning as commonly understood by those skilled in the art, unless they are defined differently. Terms defined in general dictionaries should be interpreted as having a meaning that matches their meaning in the context of the relevant art, and should not be interpreted in an ideal or overly formal sense, unless they are explicitly defined in this application.

[0054] The foregoing detailed description illustrates the present invention. Furthermore, the foregoing describes and illustrates exemplary embodiments of the invention, and the invention can be used in various other combinations, variations, and environments. That is, modifications or alterations can be made to the foregoing within the scope of the inventive concept disclosed herein, within the scope equivalent to the scope of this disclosure, and / or within the scope of the art or knowledge. The foregoing exemplary embodiments describe the optimal state for implementing the technical spirit of the invention, and various changes are possible in the specific application areas and uses of the invention. Therefore, the foregoing detailed description of the invention is not intended to limit the invention to the disclosed exemplary embodiments. Furthermore, the appended claims should be interpreted as also encompassing other exemplary embodiments.

[0055] Figure 1 This is a schematic top plan view of the substrate processing facility 1 of the present invention.

[0056] refer to Figure 1 The substrate processing facility 1 includes a transposition module 1000 and a process processing module 2000. The transposition module 1000 includes a loading port 1200 and a transfer frame 1400. The loading port 1200, the transfer frame 1400, and the process processing module 2000 are arranged in series. In the following text, the direction in which the loading port 1200, the transfer frame 1400, and the process processing module 2000 are arranged is referred to as the first direction 12, the direction perpendicular to the first direction 12 when viewed from above is referred to as the second direction 14, and the direction perpendicular to the plane including the first direction 12 and the second direction 14 is referred to as the third direction 16.

[0057] A carrier 1300 for accommodating the substrate W is disposed on a loading port 1200. Multiple loading ports 1200 are provided, and the multiple loading ports 120 are arranged in series along the second direction 14. Figure 1 Four loading ports 1200 are shown. However, the number of loading ports 1200 can be increased or decreased depending on the process efficiency of the process module 2000 and conditions such as duty cycle. Slots (not shown) for supporting the edges of the substrate W are formed in the carrier 1300. Multiple slots are provided along the third direction 16. The substrate W is positioned in the carrier 1300 to be stacked while being spaced apart from each other along the third direction. A front-opening standard box (FOUP) can be used as the carrier 1300.

[0058] The process module 2000 includes a buffer unit 2200, a transfer chamber 2400, and a process chamber 2600. The longitudinal direction of the transfer chamber 2400 is parallel to a first direction 12. The process chambers 2600 are arranged along a second direction 14 on one side and the other side of the transfer chamber 2400. The process chambers 2600 located on one side and the process chambers 2600 located on the other side of the transfer chamber 2400 are configured to be symmetrical to each other based on the transfer chamber 2400. Some process chambers 2600 are arranged along the longitudinal direction of the transfer chamber 2400. In addition, some process chambers 2600 are arranged to be stacked on top of each other. That is, the process chambers 2600 can be arranged on one side of the transfer chamber 2400 in an A×B arrangement (A and B are natural numbers equal to or greater than 1). In this document, A is the number of process chambers 2600 arranged in series along the first direction 12, and B is the number of process chambers 2600 arranged in series along a third direction 16. When four or six process chambers 2600 are provided on one side of the transfer chamber 2400, the process chambers 2600 can be arranged in a 2×2 or 3×2 configuration. The number of process chambers 2600 can be increased or decreased. Furthermore, contrary to the aforementioned, the process chambers 2600 can be provided only on one side of the transfer chamber 2400. Also, contrary to the aforementioned, the process chambers 2600 can be arranged in a single layer on only one side and both sides of the transfer chamber 2400.

[0059] A buffer unit 2200 is disposed between the transfer frame 1400 and the transfer chamber 2400. The buffer unit 2200 provides space for the substrate W to remain before it is transferred between the transfer chamber 2400 and the transfer frame 1400. The buffer unit 2200 is provided with (not shown) slots in which the substrate W is placed, and multiple slots (not shown) are provided, spaced apart from each other along a third direction 16. In the buffer unit 2200, the surfaces facing the transfer frame 1400 and the surfaces facing the transfer chamber 2400 are open.

[0060] A transfer frame 1400 transfers substrate W between a carrier 1300 positioned on a loading port 1200 and a buffer unit 2200. A transfer track 1420 and a transfer robot 1440 are provided in the transfer frame 1400. The longitudinal direction of the transfer track 1420 is parallel to a second direction 14. The transfer robot 1440 is mounted on the transfer track 1420 and moves linearly along the transfer track 1420 in the second direction 14. The transfer robot 1440 includes a base 1441, a body 1442, and a transfer arm 1443. The base 1441 is mounted to be movable along the transfer track 1420. The body 1442 is coupled to the base 1441. The body 1442 is configured to be movable on the base 1441 in a third direction 16. Furthermore, the body 1442 is configured to be rotatable on the base 1441. A rotary arm 1443 is coupled to a body 1442 and configured to move back and forth relative to the body 1442. Multiple rotary arms 1443 are configured to be individually driven. The rotary arms 1443 are arranged to be stacked while spaced apart from each other on a third direction 16. Some rotary arms 1443 can be used when the substrate W is transferred from the process module 2000 to the carrier 1300, while other rotary arms can be used when the substrate W is transferred from the carrier 1300 to the process module 2000. This prevents particles generated from the substrate W before processing from adhering to the processed substrate W during the loading and unloading of the substrate W by the rotary robot 1440.

[0061] The transfer chamber 2400 transfers substrate W between the buffer unit 2200 and the process chamber 2600, and between the process chambers 2600. A guide rail 2420 and a main robot 2440 are disposed in the transfer chamber 2400. The guide rail 2420 is arranged such that its longitudinal direction is parallel to a first direction 12. The main robot 2440 is mounted on the guide rail 2420 and moves linearly along the first direction 12 on the guide rail 2420. The main robot 2440 includes a base 2441, a body 2442, and a main arm 2443. The base 2441 is mounted movable along the guide rail 2420. The body 2442 is coupled to the base 2441. The body 2442 is configured to move along a third direction 16 on the base 2441. Furthermore, the body 2442 is configured to rotate on the base 2441. The main arm 2443 is coupled to the body 2442 and configured to move back and forth relative to the body 2442. Multiple main arms 2443 are configured to be driven individually. The main arms 2443 are arranged to be stacked while being spaced apart from each other on the third direction 16. The main arms 2443 used when the substrate W is transferred from the buffer unit 2200 to the process chamber 2600 may be different from the main arms 2443 used when the substrate W is transferred from the process chamber 2600 to the buffer unit 2200.

[0062] A substrate processing apparatus 10 for performing a cleaning process on substrate W is provided in process chamber 2600. Depending on the type of cleaning process performed, the substrate processing apparatus 10 provided in each process chamber 2600 may have different structures. Optionally, the substrate processing apparatus 10 in each process chamber 2600 may have the same structure. Optionally, the process chambers 2600 may be divided into multiple groups, with substrate processing apparatus 10 provided in process chambers 2600 within the same group having the same structure, and substrate processing apparatus 10 provided in process chambers 2600 within different groups having different structures. For example, when the process chambers 2600 are divided into two groups, the process chambers 2600 of the first group may be provided on one side of the transfer chamber 2400, while the process chambers 2600 of the second group may be provided on the other side of the transfer chamber 2400. Optionally, on each side of the transfer chamber 2400, the process chambers 2600 of the first group may be provided on the lower layer, and the process chambers 2600 of the second group may be provided on the upper layer. The process chambers 2600 in the first group and the process chambers 2600 in the second group can be classified according to the type of chemicals used or the type of cleaning method.

[0063] In the exemplary embodiments described below, an apparatus for cleaning substrate W using processing fluids such as high-temperature sulfuric acid, high-temperature phosphoric acid, alkaline chemical liquids, acidic chemical liquids, rinsing liquids, and drying gases will be described as an example. However, the spirit of the invention is not limited thereto, and can be applied to various types of apparatus that perform processes (e.g., etching processes) while rotating substrate W.

[0064] Figure 2 yes Figure 1 Top view of the substrate processing apparatus. Figure 3 yes Figure 1 A cross-sectional view of the substrate processing apparatus. (Reference) Figure 2 and Figure 3 The substrate processing apparatus 10 includes a chamber 100, a bowl-shaped portion 200, a support unit 300, a chemical liquid nozzle unit 410, a rinsing liquid nozzle unit 430, a discharge unit 500, a lifting unit 600, a sensor unit 700, a chemical liquid supply unit 900, and a controller 800.

[0065] The chamber 100 provides a sealed internal space. An airflow supply component 110 is installed on the upper part of the chamber 100, which forms a downward airflow in the chamber 100.

[0066] The airflow supply component 110 filters high-humidity external air and supplies the filtered external air to the chamber 100. The high-humidity external gas passes through the airflow supply component 110 and is supplied to the chamber 100 to form a downward airflow. The downward airflow provides a uniform airflow to the upper part of the substrate W, and discharges the pollutants generated during the process of treating the surface of the substrate W with the processing fluid, along with the air, through the recovery containers 210, 220, and 230 of the bowl-shaped portion 200 to the discharge unit 500.

[0067] The chamber 100 is divided into a process area 120 and a maintenance and repair area 130 by a horizontal partition wall 102. In the process area 120, the bowl-shaped section 200 and the support unit 300 are placed. In the maintenance and repair area 130, in addition to the recovery lines 241, 243, and 245 connected to the bowl-shaped section 200 and the discharge line 510, the drive unit of the lifting unit 600, the drive unit connected to the chemical liquid nozzle unit 410, and supply lines are also placed. The maintenance and repair area 130 is isolated from the process area 120.

[0068] The bowl-shaped portion 200 has a cylindrical shape with an open upper portion and a processing space for processing the substrate W. The open upper surface of the bowl-shaped portion 200 is configured as a loading and unloading channel for the substrate W. A support unit 300 is located in the processing space. The support unit 300 rotates the substrate W while supporting it during process progress.

[0069] The bowl-shaped portion 200 provides a lower space, to which the discharge pipe 290 is connected at its lower end. In the bowl-shaped portion 200, the first to third recovery containers 210, 220 and 230 are arranged in a multi-stage manner for introducing and drawing in the processing liquid and gas scattered on the rotating substrate W.

[0070] The first to third annular recycling containers 210, 220, and 230 have a discharge port H communicating with a common annular space. Specifically, each of the first to third recycling container cylinders 210, 220, and 230 includes a bottom surface having an annular hole shape and sidewalls extending from the bottom surface and having a cylindrical shape. The second recycling container 220 surrounds and is spaced apart from the first recycling container 210. The third recycling container 230 surrounds and is spaced apart from the second recycling container 220.

[0071] The first to third recycling containers 210, 220, and 230 provide first to second recycling spaces RS1, RS2, and RS3, into which airflow containing spilled processing liquid and fumes from the substrate W flows. The first recycling space RS1 is defined by the first recycling container 110, the second recycling space RS2 is defined by the space between the first recycling container 210 and the second recycling container 220, and the third recycling space RS3 is defined by the space between the second recycling container 220 and the third recycling container 230.

[0072] The central portion of the upper surface of each of the first to third recovery containers 210, 220, and 230 is open. The first to third recovery containers 210, 220, and 230 are formed by inclined surfaces, the distance between the inclined surfaces and the corresponding bottom surfaces gradually increasing from the connected sidewalls towards the open portions. Processing liquid spilled from the substrate W flows along the upper surfaces of the first to third recovery containers 210, 220, and 230 into recovery spaces RS1, RS2, and RS3.

[0073] The first treatment liquid introduced into the first recovery space RS1 is discharged to the outside through the first recovery pipeline 241. The second treatment liquid introduced into the second recovery space RS2 is discharged to the outside through the second recovery pipeline 243, and the third treatment liquid introduced into the third recovery space RS3 is discharged to the outside through the recovery pipeline 245.

[0074] The support unit 300 can support the substrate W during the process and can rotate the substrate W during the process.

[0075] The support unit 300 includes a support plate 310, a rotary drive unit 320, a bag nozzle unit 330, and a heating component 340.

[0076] The support plate 310 includes a chuck stage 312 and a quartz window 314. The chuck stage 312 has a circular top surface. The chuck stage 312 is rotated by coupling to a rotary drive unit 320. A retaining pin 316 is mounted on the edge of the chuck stage 312. The retaining pin 316 protrudes above the quartz window 314. The retaining pin 316 is aligned with the substrate W such that the substrate W, supported by a plurality of support pins 318, is in its original position. During this process, the retaining pin 316 contacts the side of the substrate W to prevent the substrate W from disengaging from its original position.

[0077] A quartz window 314 is located on the substrate W and the chuck stage 312. The quartz window 314 is configured to protect the heating member 340. The quartz window 314 can be transparent. The quartz window 314 can rotate together with the chuck stage 312. The quartz window 314 includes support pins 318. The support pins 318 are arranged in the edge portion of the upper surface of the quartz window 314 and are spaced apart from each other at predetermined intervals. The support pins 318 are configured to project upward from the quartz window 314. The support pins 318 support the lower surface of the substrate W, and the substrate W is supported while being spaced apart from the quartz window 314 in the upward direction.

[0078] The rotary drive unit 320 has a hollow shape and is connected to the chuck stage 312 to rotate the chuck stage 312. When the chuck stage 312 rotates, the quartz window 314 can rotate together with the chuck stage 312. Furthermore, components disposed in the support plate 310 can be positioned independently of the rotation of the support plate 310. For example, the heating element 340, described later, can be positioned independently of the rotation of the support plate 310.

[0079] The rear nozzle unit 330 is used to inject rinsing fluid DIW onto the rear surface of the substrate W. The rear nozzle unit 330 includes a nozzle body 332 and a rear nozzle injection unit 334. The rear nozzle injection unit 334 is located at the upper center of the chuck stage 312 and the quartz window 314. The nozzle body 332 is mounted via a hollow rotary drive unit 320, and rinsing fluid transport lines, gas supply lines, and purge gas supply lines can be disposed within the nozzle body 332.

[0080] The heating element 340 can heat the substrate W during process progress. The heating element 340 is arranged in the support plate 310. The heating element 340 may include a lamp 342.

[0081] Heating element 340 is mounted on chuck stage 312. Heating element 340 can be annular. Multiple heating elements 340 can be provided. Heating elements 340 can have different diameters. The temperature of each heating element 340 can be individually controlled. Heating element 340 can be a light-emitting lamp 342. Lamp 342 can be a lamp emitting light with a wavelength in the infrared region. Furthermore, lamp 342 can be an infrared (IR) lamp. Lamp 342 can heat substrate W by emitting infrared light.

[0082] The heating element 340 can be subdivided into multiple concentric regions. Each region can be equipped with a lamp 342 capable of heating each region individually. The lamps 342 can be arranged in a ring concentrically at different radial distances relative to the center of the chuck stage 312. In this case, the number of lamps 342 can be increased or decreased according to the required degree of temperature control. The heating element 340 can control the temperature of each individual region to continuously raise or lower the temperature according to the radius of the substrate W as the process progresses.

[0083] The support unit 300 may further include a cooling component (not shown), a heat insulation plate (not shown), and a heat dissipation plate (not shown). The cooling component may be arranged in the support plate 310 to supply cooling fluid to the support plate 310. For example, the cooling component may supply cooling fluid to a flow path formed in the heat dissipation plate.

[0084] A heat insulation plate can be arranged in the support plate 310. Furthermore, the heat insulation plate can be arranged in the support plate 310 below the heating member 340. The heat insulation plate can be made of a transparent material. The heat insulation plate is made of a transparent material so that light emitted from the heating member 340 can pass through it. Furthermore, the heat insulation plate can be made of a material with low thermal conductivity. For example, the heat insulation plate can be made of a material with lower thermal conductivity than the heat sink. For example, the heat insulation plate can be made of a material including glass. The heat insulation plate can be made of a material including a novel ceramic. The heat insulation plate can be made of a material including glass ceramic. However, the invention is not limited thereto; the heat insulation plate can also be made of a material including ceramic.

[0085] The reflector can be arranged in the support plate 310. Alternatively, the reflector can be arranged in the support plate 310 below the heat insulation plate. The reflector can be made of a material that reflects light emitted by the heating member 340. The reflector can be made of a material that reflects light with wavelengths in the infrared region. The reflector can be made of a material including metals. The reflector can be made of a material including aluminum. The reflector can be made of a material including silver-plated aluminum with a silver (Ag) coating on its surface.

[0086] The heat sink can dissipate heat transferred from the insulation plate to the outside. Furthermore, a flow path for cooling fluid supplied by the cooling components can be formed within the heat sink. The heat sink can be arranged within the support plate 310. Alternatively, the heat sink can be arranged within the support plate below the reflector. The heat sink can be made of a material with high thermal conductivity. For example, the heat sink can be made of a material with even higher thermal conductivity than the aforementioned insulation plate. The heat sink can be made of a material including metal. The heat sink can be made of a material including aluminum and / or silver.

[0087] The chemical liquid nozzle unit 410 can process the substrate W by supplying a processing liquid to the substrate W. The chemical liquid nozzle unit 410 can supply a heated processing liquid to the substrate W. The processing liquid can be a high-temperature chemical used for etching the surface of the substrate W. According to an exemplary embodiment, the processing liquid may include phosphoric acid (H3PO4).

[0088] The chemical liquid nozzle unit 410 may include a first nozzle 411, a nozzle arm 413, a support rod 415, and a nozzle driver 417. The first nozzle 411 receives a processing liquid through the chemical liquid supply unit 900. The first nozzle 411 discharges the processing liquid onto the surface of the substrate W. The nozzle arm 413 is an arm having a long length in one direction, and the first nozzle 411 is mounted at the end of the nozzle arm 413. The nozzle arm 413 supports the first nozzle 411. The support rod 415 is mounted to the rear end of the nozzle arm 413. The support rod 415 is located in the lower part of the nozzle arm 413. The support rod 415 is arranged perpendicular to the nozzle arm 413. The nozzle driver 417 is disposed at the lower end of the support rod 415. The nozzle driver 417 causes the support rod 415 to rotate about its longitudinal axis. As the support rod 415 rotates, the nozzle arm 413 and the first nozzle 411 swing relative to the support rod 415, which serves as an axis. The first nozzle 411 can swing between the outside and inside of the bowl-shaped portion 200. In addition, the first nozzle 411 can oscillate in the section between the center and edge regions of the substrate W to discharge the processing liquid.

[0089] The rinse fluid nozzle unit 430 may include a second nozzle 431, a nozzle arm 433, a support rod 435, and a nozzle driver 437. The second nozzle 431 receives rinse fluid through the rinse fluid supply unit 440. The second nozzle 431 discharges the cleaning fluid DIW onto the surface of the substrate W. The nozzle arm 433 is an arm having a long length in one direction, and the second nozzle 431 is mounted at the end of the nozzle arm 433. The nozzle arm 433 supports the second nozzle 431. The support rod 435 is mounted at the rear end of the nozzle arm 433. The support rod 435 is located in the lower part of the nozzle arm 433. The support rod 435 is arranged perpendicular to the nozzle arm 433. The nozzle driver 437 is disposed at the lower end of the support rod 435. The nozzle driver 437 causes the support rod 435 to rotate about its longitudinal axis. As the support rod 435 rotates, the nozzle arm 433 and the second nozzle 431 oscillate relative to the support rod 435, which serves as an axis. The second nozzle 431 can swing between the outside and the inside of the cup-shaped portion 200.

[0090] The discharge unit 500 can discharge the interior of the bowl-shaped portion 100. As an example, the discharge unit 500 is used to provide discharge pressure (suction pressure) to the recovery containers for recovering the process liquid among the first to third recovery containers 210, 220, and 230 during the process. The discharge unit 500 includes a discharge line 510 connected to a discharge pipe 290 and a damper 520. The discharge line 510 receives discharge pressure from a discharge pump (not shown) and is connected to a main discharge line embedded in the bottom space of the semiconductor production line.

[0091] Simultaneously, the bowl-shaped portion 200 is connected to the lifting unit 600, which changes the vertical position of the bowl-shaped portion 200. The lifting unit 600 moves the bowl-shaped portion 200 linearly in the vertical direction. Based on the vertical movement of the bowl-shaped portion 200, the relative height of the bowl-shaped portion 200 relative to the support unit 300 changes.

[0092] The lifting unit 600 includes a support 612, a moving shaft 614, and a driver 616. The support 612 is fixedly mounted on the outer wall of the processing container 100. The moving shaft 616, which moves vertically via the driver 616, is fixedly connected to the support 612. When the substrate W is loaded into or unloaded from the support unit 300, the bowl-shaped portion 200 descends, causing the support unit 300 to protrude above the bowl-shaped portion 200. Furthermore, the height of the bowl-shaped portion 200 is adjusted to allow the processing liquid to be introduced into predetermined recovery containers 210, 220, and 230 according to the type of processing liquid supplied to the substrate W during the process. The bowl-shaped portion 200 allows for the recovery of different types of processing liquid and contaminants for each recovery space RS1, RS2, and RS3.

[0093] The controller 800 can control the chemical liquid nozzle unit 410 and the rinsing liquid nozzle unit 430, such that the chemical liquid nozzle 410 first supplies the processing liquid to the substrate, and then supplies the rinsing liquid to the substrate. The controller 800 can control the support unit 300, such that the substrate rotates faster when the rinsing liquid is supplied than when the processing liquid is supplied.

[0094] The controller 800 can control the substrate processing apparatus. The controller 800 can control the components of the process chamber to process the substrate according to the settings described above. Furthermore, the controller 800 may include a process controller consisting of a microprocessor (computer) that performs control of the substrate processing apparatus; a user interface formed by a keyboard through which an operator inputs commands for managing the substrate processing apparatus; a display for visualizing and displaying the operation of the substrate processing apparatus; and a storage unit storing: control programs for executing the process processing performed in the substrate processing apparatus under the control of the process controller, or various data and programs, i.e., process processing schemes for executing the process processing according to process processing conditions for each configuration. Furthermore, the user interface and the storage unit can be connected to the process controller. The process processing scheme can be stored in a storage medium in the storage unit, and the storage medium can be a hard disk, or a portable hard disk, such as a CD-ROM or DVD, or semiconductor memory, such as flash memory.

[0095] Figure 4 The diagram shows Figure 3 The chemical liquid supply unit shown is Figure 5 The diagram shows Figure 4The main structure of the chemical liquid supply unit shown

[0096] refer to Figure 4 and Figure 5 The chemical liquid supply unit 900 may include a storage tank 902, a circulation line 910, a pump 912, a chemical liquid supply line 920, a discharge line 930, a purge gas supply line 940, and a level pipe 950.

[0097] Tank 902 has a containment space in which chemical liquid supplied from chemical liquid supply source 901 is stored. A circulation line 910 circulates the chemical liquid contained in the containment space. Circulation line 910 can be connected to the upper and lower ends of the processing tank 902, respectively. Pump 912, heater 914, and filter 916 can be installed in circulation line 910. Pump 912 pressurizes circulation line 910, causing the processed liquid contained in the containment space to circulate through circulation line 910. Heater 914 heats the processed liquid circulating in circulation line 910. Heater 912 heats the processed liquid to process temperature or higher.

[0098] The chemical liquid supply line 920 can supply chemical liquid to the nozzle 411. The chemical liquid supply line 920 is provided as a branch line branching from the circulation line 910. The chemical liquid supply line 920 branches from the circulation line 910 and connects to the nozzle 411. Therefore, chemical liquid in the receiving space can be supplied to the nozzle 411 in sequence through the circulation line 910 and the chemical liquid supply line 920.

[0099] Discharge line 930 is connected to storage tank 902. Chemical liquids in storage tank 902 can be discharged through discharge line 930. A first valve 932 is installed in discharge line 930. The chemical liquids in the storage tank are discharged or blocked depending on whether the first valve 932 is opened or closed.

[0100] A level pipe 950, connected to storage tank 902, is installed on one side of storage tank 902. The level pipe 950 can hold the chemical liquid at the same level as the chemical liquid in storage tank 902, thereby allowing the level of the chemical liquid in storage tank 902 to be checked.

[0101] The level pipe 950 is also connected in parallel to the storage tank 902 for storing chemical liquid C, and can introduce a portion of the chemical liquid according to the water level of the chemical liquid stored in the storage tank 902. That is, the level pipe 950 is connected to the upper and lower parts of the storage tank 902 in a bypass manner, so that the water level of the chemical liquid in the storage tank 902 can be easily measured from the outside of the storage tank 902.

[0102] In this configuration, the water level of chemical liquid C1 in the level tube 950 can be correlated with the water level of chemical liquid C in the chemical liquid storage tank 902, and the relationship between the water level of chemical liquid C1 in the level tube 950 and the water level of chemical liquid C in the chemical liquid storage tank 902 can be determined based on conditions (e.g., the shape and size of the storage tank 902, and the shape of the level tube 950). The relationship between the water level of chemical liquid C1 in the level tube 950 and the water level of chemical liquid C in the chemical liquid storage tank 902 can be preset. The level tube 950 can have a generally cylindrical elongated tube shape, but is not limited to this.

[0103] On the other hand, the material of the level tube 950 can be transparent glass or synthetic resin, preferably PFA (perfluoroalkoxy), which is a highly corrosion-resistant Teflon fluorescent dye. In this case, when using a transparent PFA tube, the level of the chemical liquid can be easily checked from the outside.

[0104] On the other hand, the level tube 950 has a level sensor 953 for measuring the level of the chemical liquid, thereby measuring the level of the chemical liquid stored in the storage tank 902. The level sensor 953 can be a non-contact sensor capable of measurement without direct contact with the chemical liquid. Preferably, the level sensor 953 can measure the level of the chemical liquid introduced into the level tube 950 by using an output current value while the water level of the chemical liquid introduced into the level tube 950 changes. This method uses the same principle as the capacitance method using a capacitance sensor to sense the object. Furthermore, various non-contact sensors can be applied as level sensors, such as radar, laser, force sensor, nuclear, and ultrasonic methods.

[0105] In this exemplary embodiment, level sensors 953 are arranged at six locations to measure six liquid levels: HH, H, MR, M, L, and LL. Of course, the number and locations of the level sensors 953 can vary as needed.

[0106] The level gauge 950 includes a vertically extending leveling line 952, a first upper line 954 connected to the upper end of the leveling line 952 and the upper space of the storage tank 902, and a second lower line 956 connected to the lower end of the leveling line 952 and the discharge line 930. The first upper line 954 can be connected to the discharge line 990 of the storage tank. Furthermore, the connection point between the second lower line 956 and the discharge line 930 can be located between the first valve 932 and the storage tank 902.

[0107] The purge gas supply line 940 can be connected to the connection point of the leveling line 952 and the first upper line 954. The purge gas supply line 940 supplies purge gas to the level pipe 950. The purge gas supplied through the purge gas supply line 940 pressurizes the chemical liquid in the leveling line 942 in the retained chemical liquid discharge mode. Therefore, when the first valve 932 is opened and the chemical liquid is discharged, the chemical liquid in the level pipe 950 can be discharged faster than the chemical liquid in the storage tank 902. Therefore, the amount of chemical waste generated during the removal of chemical liquid C1 from the level pipe 950 can be reduced.

[0108] Purge gas supplied via purge gas supply line 940 can also be provided to the upper space of storage tank 902. The purge gas purges the upper space of storage tank 902, and when the internal pressure of storage tank 902 is predetermined, the purge gas can be discharged to the outside via discharge line 990. The purge gas can be an inert gas.

[0109] The controller 800 can control the first valve 932 installed in the discharge line 930. Figure 6 The diagram illustrates the process by which chemical liquids in the liquid level tube are discharged in a stagnant chemical liquid discharge mode.

[0110] like Figure 6 As shown, the controller 800 keeps the first valve 932 open for a predetermined period of time to execute a residual chemical liquid discharge mode, causing the residual chemical liquid C1 in the level pipe 950 to be discharged through the discharge line 930. In the residual chemical liquid discharge mode, the residual chemical liquid C1 in the level pipe 950 is below level L, and the pump operation can be stopped, so that preferably only chemical liquid discharge is performed before the level of chemical liquid C1 reaches level L. While the residual chemical liquid C1 in the level pipe 950 is discharged through the discharge line 930, the chemical liquid in the storage tank 902 is circulated through the circulation line 910.

[0111] The chemical liquid supply unit with the above-described structure circulates the chemical liquid stored in the storage tank through a circulation pipeline and performs a chemical liquid discharge operation at regular intervals to drain the chemical liquid remaining in the level pipe. During the chemical liquid discharge operation, the lower end of the level pipe is connected to the discharge pipeline of the storage tank, so that when the first valve is opened, the residual chemical liquid in the level pipe can be discharged.

[0112] Figure 7 The diagram illustrates a first variant example of a chemical liquid supply unit. Figure 8 The diagram shows... Figure 7 The process of discharging chemical liquid from the level tube in the chemical liquid supply unit.

[0113] refer to Figure 7 and Figure 8The chemical liquid supply unit 900a according to the first variant example is characterized in that a second valve 958 is installed on the first upper pipeline 954. The controller 800 can close the second valve 958 so that the purge gas supplied through the purge gas supply pipeline 940 is provided to the leveling pipeline 952 only in the residual chemical liquid discharge mode.

[0114] As described above, since the purging gas is only supplied to the leveling line 952, the chemical liquid in the leveling line 952 can be discharged more quickly.

[0115] Figure 9 The figure shows a second variant example of a chemical liquid supply unit.

[0116] refer to Figure 9 The chemical liquid supply device 900b according to the second variant is characterized in that it further includes a branch line 970. The branch line 970 branches off from a predetermined height of the level line 952 and connects to the discharge line 930. A third valve 972 can be installed in the branch line 970. The branch line 970 can be located between the M and L levels of the level line 952. Furthermore, the junction point of the branch line 972 can be the point through the first valve 932.

[0117] In the discharge of chemical liquid from the level pipe of the chemical liquid supply device described above, when the first valve is closed and the third valve is open, the chemical liquid in section C2 is discharged through the branch line.

[0118] The foregoing detailed description illustrates the present invention. Furthermore, the foregoing describes and illustrates exemplary embodiments of the invention, and the invention can be used in various other combinations, variations, and environments. That is, modifications or alterations can be made to the foregoing within the scope of the inventive concept disclosed herein, within the scope equivalent to the scope of this disclosure, and / or within the scope of the art or knowledge. The foregoing exemplary embodiments describe the optimal state for implementing the technical spirit of the invention, and various changes are possible in the specific application areas and uses of the invention. Therefore, the foregoing detailed description of the invention is not intended to limit the invention to the disclosed exemplary embodiments. Furthermore, the appended claims should be interpreted as also encompassing other exemplary embodiments.

Claims

1. An apparatus for supplying a chemical liquid, the apparatus comprising: A storage tank in which chemical liquids are stored; The chemical liquid stored in the storage tank is discharged through the discharge pipeline; A level pipe is connected to the storage tank to check the water level of the chemical liquid in the storage tank and to receive the chemical liquid at the same water level as the chemical liquid in the storage tank. A circulation pipeline connected to the storage tank to circulate the chemical liquid in the storage tank; Pump, the pump being installed in the circulation pipeline; as well as A controller, used to control a first valve installed in the discharge line, One end of the level gauge is connected to the upper space of the storage tank, and the other end is connected to the discharge pipeline. The controller opens the first valve for a predetermined time and executes a residual chemical liquid discharge mode, causing the residual chemical liquid in the level tube to be discharged through the discharge line, and controls the pump to circulate the chemical liquid through the circulation line even when the residual chemical liquid discharge mode is in progress.

2. The apparatus according to claim 1, further comprising: A purge gas supply line is provided for supplying purge gas to the level tube.

3. The apparatus of claim 2, wherein the purge gas supply line supplies purge gas to pressurize the chemical liquid in the leveling line in the retained chemical liquid discharge mode.

4. The apparatus according to claim 1, wherein the liquid level tube comprises: Vertically extending leveling pipeline; The first upper pipeline connects the upper end of the leveling pipeline to the upper space of the storage tank; and The second lower pipeline connects the lower end of the leveling pipeline to the discharge pipeline.

5. The apparatus according to claim 4, further comprising: A purge gas supply line is provided, which is connected to the connection between the first upper line and the leveling line to supply purge gas to the leveling line.

6. The apparatus according to claim 5, further comprising: The second valve is installed on the first upper pipeline. The controller controls the second valve such that the purge gas supplied through the purge gas supply line is provided only to the leveling line in the residual chemical liquid discharge mode.

7. The apparatus according to claim 4, further comprising: A branch pipeline, which branches off from a predetermined height of the leveling pipeline and connects to the discharge pipeline, and is equipped with a third valve. The controller opens the third valve in the residual chemical liquid discharge mode to discharge the chemical liquid present at a predetermined height or higher in the leveling pipeline.

8. The apparatus according to claim 4, further comprising: A discharge pipeline is installed on the top cover of the storage tank. The first upper pipeline is connected to the discharge pipeline.

9. A method for supplying a chemical liquid by measuring the level of the chemical liquid via a level tube, the level tube being in communication with and located on one side of the storage tank, and a level sensor being placed on one side of the level tube, the method comprising: The chemical liquid discharge operation involves supplying the chemical liquid stored in the tank through the chemical liquid supply pipeline, wherein residual chemical liquid in the level pipe is discharged at regular intervals. In the chemical liquid discharge operation, the lower end of the level pipe is connected to the discharge pipeline of the storage tank, so that when the chemical liquid in the storage tank is discharged, the residual chemical liquid in the level pipe is also discharged together. Even while the chemical liquid discharge operation is in progress, the chemical liquid is circulated through a circulation pipeline connected to the storage tank.

10. The method according to claim 9, wherein in the chemical liquid discharge operation, the residual chemical liquid in the level tube is pressurized with a purge gas.

11. The method of claim 10, wherein a valve installed in the upper pipeline of the level tube is closed such that only the purge gas is supplied to the level tube during the chemical liquid discharge operation.

12. The method of claim 10, wherein in the chemical liquid discharge operation, only the stagnant chemical liquid in the level tube is discharged to a level prior to the set water level in the level tube.

13. A substrate processing facility, comprising: Processing unit, the processing unit being used to process a substrate with a chemical liquid; and A chemical liquid supply unit is used to supply the chemical liquid to the processing unit. The chemical liquid supply unit includes: A storage tank in which chemical liquids are stored; A circulation pipeline connected to the storage tank to circulate the chemical liquid in the storage tank; Pump, the pump being installed in the circulation pipeline; A chemical liquid supply line, which branches off from the circulation line; The chemical liquid stored in the storage tank is discharged through the discharge pipeline; A level pipe, connected to the storage tank, is used to check the water level of the chemical liquid in the storage tank and to receive the chemical liquid at a level equal to the water level of the chemical liquid in the storage tank; and A controller, used to control a first valve installed in the discharge line, One end of the level gauge is connected to the upper space of the storage tank, and the other end is connected to the discharge pipeline. The controller opens the first valve for a predetermined time and executes a residual chemical liquid discharge mode, causing the residual chemical liquid in the level tube to be discharged through the discharge line, and controls the pump to circulate the chemical liquid through the circulation line even when the residual chemical liquid discharge mode is in progress.

14. The substrate processing facility according to claim 13, wherein the liquid level tube comprises: Vertically extending leveling pipeline; The first upper pipeline connects the upper end of the leveling pipeline to the upper space of the storage tank; and The second lower pipeline connects the lower end of the leveling pipeline to the discharge pipeline.

15. The substrate processing facility of claim 14, wherein the controller further comprises a purge gas supply line for supplying purge gas to the level tube, and The purge gas supply line supplies purge gas to pressurize the chemical liquid in the leveling line under the retained chemical liquid discharge mode.

16. The substrate processing facility according to claim 14, further comprising: A purge gas supply line is provided, which is connected to the connection portion of the first upper line and the leveling line to supply purge gas to the leveling line.

17. The substrate processing facility according to claim 16, further comprising: The second valve is installed on the first upper pipeline. The controller controls the second valve such that the purge gas supplied through the purge gas supply line is provided only to the leveling line in the residual chemical liquid discharge mode.

18. The substrate processing facility according to claim 14, further comprising: A branch pipeline, which branches off from a predetermined height of the leveling pipeline and connects to the discharge pipeline, and is equipped with a third valve. The controller opens the third valve in the residual chemical liquid discharge mode to discharge the chemical liquid present at a predetermined height or higher in the leveling pipeline.

Images