A high power microwave injection test system with reference signal

Abstract

A high-power microwave injection test system with a reference signal comprises a duplexer 1, the duplexer is connected to a circulator; the reflection measurement port of the circulator is connected to a duplexer 2 through a device to be tested; the circulator is connected to a signal monitor; the signal monitor is also connected to the duplexer 2; high-power microwave injection power and reference signal power with different center frequencies are set, and the state of the device can be understood in real time by monitoring the level of the reference signal.

Description

Technical Field

[0001] The invention belongs to the technical field of high-power microwaves, and in particular relates to a high-power microwave injection test system with a reference signal. Background Art

[0002] High-power microwave is a strong electromagnetic pulse with a frequency range of 0.5-300GHz. The power of the device generating the source is generally greater than 1MW, and it has the characteristics of short pulse and high power. Its main attack targets are radar, communication, navigation, computer military electronic equipment, weapon control and guidance systems. It can penetrate electronic components, burn enemy electronic equipment, and permanently damage electronic systems. When conducting high-power microwave effect testing and protection technology research on sensitive devices, it is necessary to use an injection-type test system to evaluate and test the damage threshold, damage degree and damage process of sensitive devices. The so-called injection test system introduces high-power microwave signals from a high-power microwave simulation source, establishes a waveguide-type coupling test system for incident, reflected and transmitted, and reflects the state changes of sensitive devices in real time through waveform measurement, recording and analysis.

[0003] The existing measurement system can observe the injected high-power microwave power level, the reflected power level and the transmitted power level of the device under test in real time. However, during the time when the high-power microwave interacts with the device under test, the electrical parameter state of the device under test cannot be known. This system introduces a reference signal, combines it through a duplexer, and injects it into the device under test at the same time, and then divides it through a duplexer to separate the two signals. By observing the reference signal, the electrical parameter state of the device under test can be understood in real time. Summary of the invention

[0004] In order to overcome the above-mentioned deficiencies of the prior art, the object of the present invention is to provide a high-power microwave injection test system with a reference signal, which can monitor the status of sensitive devices in real time during the injection experiment and obtain the process of damage and degradation thereof.

[0005] The circuit parameters of the device under test, such as attenuation, gain, phase shift and group delay, can be measured and estimated by injecting a specific signal waveform. Before this patent was proposed, in order to obtain the circuit parameters of the device after high-power microwave injection, it was generally necessary to measure it through instruments after the injection experiment.

[0006] To achieve the above-mentioned purpose, the technical solution adopted by the present invention is: a high-power microwave injection test system with a reference signal, including a duplexer 1, the duplexer is connected to a circulator; the reflection measurement port of the transmission waveguide is connected to the duplexer 2 through the device to be tested; the circulator is connected to a signal monitor; and the signal monitor is also connected to the duplexer 2.

[0007] The duplexer 1 is provided with a reference injection port and a high-power microwave signal injection port; the reference injection port is input with a reference signal source, and the high-power microwave signal injection port is input with a high-power microwave simulation source.

[0008] The output end of the duplexer 1 is connected to the incident measurement port of the circulator; the incident measurement port of the propagation waveguide is connected to the input end of the signal monitor; and the reflection measurement port of the propagation waveguide is connected to the input end of the signal monitor.

[0009] The reflection measurement port of the circulator is connected to the input terminal of the device under test; the output terminal of the device under test is connected to the input terminal of the second duplexer; the reference measurement port of the second duplexer is connected to the input terminal of the signal monitor; and the transmission measurement port of the second duplexer is connected to the input terminal of the signal monitor.

[0010] The beneficial effects of the present invention are:

[0011] The present invention injects a low-power continuous wave signal of a frequency close to that of a sensitive device through system design (or designs a specific excitation waveform according to measurement requirements). A frequency domain duplexer is used to combine a high-power microwave signal and a reference signal and input them into the injection measurement system. At the output end of the device to be tested, the high-power microwave signal and the reference signal are separated by a duplexer. The electrical parameters of the device to be tested are obtained by measuring the reference signal and analyzing and calculating. Since the reference signal always exists and can have a clear timing relationship with the high-power microwave injection signal, the relevant parameters of the device to be tested can be analyzed in real time.

[0012] This system can not only effectively carry out high-power microwave injection experiments, but more importantly, it can detect parameters such as injection power, transmission power, and characteristics of reference signals. It can monitor the working status of the test equipment in real time and effectively improve the analyzability of the experiment.

[0013] Since the system uses a duplexer design to enable two signals to share the same RF transmission channel to reach the device under test, and the high-power microwave signal and the reference signal are separated by a duplexer at the output end, the high-power microwave injection test system has the ability to inject and detect reference signals.

[0014] The high-power microwave injection test system with reference signal of the present invention is used for high-power microwave damage effect test and protection technology research direction, and can realize the monitoring of high-power microwave damage degradation process of sensitive devices. BRIEF DESCRIPTION OF THE DRAWINGS

[0015] Figure 1 It is a schematic diagram of spectrum division of the signal of the present invention.

[0016] Figure 2 It is a system principle diagram of the present invention.

[0017] Figure 3 It is a schematic diagram of the system working timing of the present invention. DETAILED DESCRIPTION

[0018] The present invention is further described in detail below in conjunction with the accompanying drawings and specific embodiments.

[0019] A high-power microwave injection test system with a reference signal includes a duplexer 1, the duplexer 1 is connected to a circulator 2; the circulator 2 is connected to a duplexer 4 through a device to be tested 3; the circulator 2 is connected to a signal monitor 5; and the signal monitor 5 is also connected to the duplexer 4.

[0020] The duplexer 1 is provided with a reference injection port 8 and a high-power microwave injection port 9; the reference injection port 8 inputs a reference signal source 13, and the high-power microwave injection port 9 inputs a high-power microwave simulation source 14.

[0021] The output end of the duplexer 1 is connected to the incident measurement port 6 of the circulator 2; the incident measurement port 6 of the circulator 2 is connected to the input end of the signal monitor 5; and the reflection measurement port 7 of the circulator 2 is connected to the input end of the signal monitor 5.

[0022] The reflection measurement port of the circulator 2 is connected to the input end of the device under test; the output end of the device under test is connected to the input end of the duplexer 2 4; the reference measurement port 10 of the duplexer 2 4 is connected to the input end of the signal monitor 5; and the transmission measurement port 11 of the duplexer 2 4 is connected to the input end of the signal monitor 5.

[0023] The bottom of the circulator 2 is also connected to a load 12 .

[0024] The incident measurement port 6 , the reflection measurement port 7 , the transmission measurement port 11 and the reference measurement port 10 are connected to the signal monitor 5 .

[0025] The propagation waveguide reflection measurement port is connected to the input end of the device under test; the output end of the device under test is connected to the input end of the duplexer 2 4; the reference measurement port is connected to the input end of the signal monitor 5; and the transmission measurement port is connected to the input end of the signal monitor 5.

[0026] The working principle of the present invention is:

[0027] Through the design of the RF system, a low-power reference signal is injected at the same time as the high-power microwave signal, and a duplexer is used to separate the two signals at the output port of the device under test. By real-time observation of the reference signal, the electrical parameter status of the device under test can be obtained in real time.

[0028] The present invention is used for high-power microwave injection experiments and can simultaneously detect reference signal characteristics, including a waveguide-form coupling test system of incidence, reflection and transmission, and can reflect the state change characteristics of sensitive devices in real time through waveform measurement, recording and analysis, which is very beneficial to the study of high-power microwave effects and improves the analyzability of the experiment.

[0029] First, we need to plan the spectrum used for the test. The system needs to use two frequency bands, one channel is the high-power microwave analog signal channel, and the other is the reference signal channel. Figure 1 There is a certain protection interval between the two channels to achieve sufficient isolation between the two channels. The above frequency band division range is related to the physical design of the duplexer. The duplexer is a key device for combining and separating two signals. Figure 2 In order to ensure that the duplexer does not suffer from high-power microwave damage effects and obtain higher frequency band isolation, a cavity filter should be used.

[0030] Since high-power microwave analog signals have the characteristics of short pulses in the time domain, a wider bandwidth can be set when planning the frequency band; in comparison, the reference signal only measures narrowband parameters such as attenuation (gain) and phase shift, so a narrower bandwidth can be designed.

[0031] The system needs to be calibrated before use. The parameters that need to be calibrated include:

[0032] 1) Incident measurement coefficient: the conversion coefficient between the signal level measured at the incident measurement port and the signal level injected at the high-power microwave simulation source port;

[0033] 2) Reflection measurement coefficient: The conversion coefficient between the signal level measured at the reflection measurement port and the device reflection signal level;

[0034] 3) Reference measurement coefficient (including amplitude and phase): The relationship between the signal level and phase measured at the reference measurement port and the signal amplitude and phase at the reference signal injection port.

[0035] The high-power microwave injection signal works in a pulse system. After being injected into the device, it will cause the device to enter a nonlinear working state, which is specifically manifested as gain compression and output signal saturation. Since the reference signal and the high-power microwave injection signal use the transmission channel of the device under test at the same time, the gain of the reference signal will be compressed very low when the high-power microwave pulse signal exists. However, when the high-power microwave pulse ends, if the device is not damaged, the device will quickly return to normal working state. If the device is damaged, the electrical parameters will change. In any case, Figure 3In the time period shown, taking a reference signal can reflect the status information of the device under test in real time. And the change of the electrical parameters of the sensitive device after each high-power microwave pulse injection is obtained, and the damage degradation process is obtained.

Claims

1. A high-power microwave injection test system with a reference signal, characterized in that: The invention comprises a duplexer 1 (1), wherein the output end of the duplexer 1 (1) is connected to the incident measurement port of a circulator (2); the reflection measurement port of the circulator (2) is connected to the input end of a device to be tested; the output end of the device to be tested is connected to the input end of a duplexer 2 (4); the incident measurement port of the circulator (2) is connected to the input end of a signal monitor (5); the reflection measurement port of the circulator (2) is connected to the input end of the signal monitor (5); the reference measurement port of the duplexer 2 (4) is connected to the input end of the signal monitor (5); and the transmission measurement port of the duplexer 2 (4) is connected to the input end of the signal monitor (5).

2. A high-power microwave injection test system with a reference signal according to claim 1, characterized in that: The duplexer 1 (1) is provided with a reference injection port and a high-power microwave signal injection port; the reference injection port inputs a reference signal source, and the high-power microwave signal injection port inputs a high-power microwave simulation source.

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