A method for correcting orientation deviations in thin plate-shaped single crystal ingots

Abstract

This application relates to the field of semiconductor processing technology, specifically disclosing a method for correcting orientation deviations in thin-plate-shaped single-crystal ingots. The method includes the following steps: S1, drawing a Cartesian coordinate system on the back side of the crystal plane to be diffracted on the single-crystal ingot; S2, performing diffraction orientation on the crystal plane to be diffracted and calculating the first component α of the orientation deviation; S3, rotating the single-crystal ingot 90° clockwise and then performing diffraction orientation on the crystal plane to be diffracted again, calculating the second component β of the orientation deviation; S4, calculating the orientation deviation angle γ and the trace angle δ using the first component α and the second component β; S5, drawing traces in the Cartesian coordinate system on the back side of the single-crystal ingot and grinding the upper surface of the single-crystal ingot flat. The correction time using this method for correcting orientation deviations in thin-plate-shaped single-crystal ingots is 4.0-4.1 hours, significantly shortening the processing cycle for correcting orientation deviations in single-crystal ingots and reducing crystal material loss.

Description

Technical Field

[0001] This application relates to the field of semiconductor processing technology, and more specifically, it relates to a method for correcting orientation deviations in thin plate-shaped single crystal ingots. Background Technology

[0002] Gallium oxide and silicon carbide are direct bandgap wide bandgap semiconductor crystals. They have advantages such as large bandgap, high thermal conductivity, high breakdown field strength, fast saturated electron drift velocity, stable chemical properties and low cost. They have been widely used in deep ultraviolet optoelectronic devices, high power and high voltage devices and high frequency communication devices.

[0003] When these crystals are used in the above-mentioned fields, they all need to be based on single-crystal substrate wafers. The preparation process of single-crystal substrate wafers includes: single crystal growth to obtain single crystal ingots → single crystal ingot orientation → orientation deviation correction → rounding → grinding of outer circle and positioning surface → multi-wire cutting → chamfering → grinding → polishing, etc.

[0004] Currently, the main single crystal growth method in the gallium oxide wafer manufacturing industry is the EFG (Extended Electromagnetic Growth) method, which produces single crystal ingots that are mostly thin plates. The mainstream growth method for silicon carbide single crystals is the physical vapor transport (PVT) method, which produces single crystal ingots that are flat and disc-shaped. All of these ingots share a common characteristic: the size of the ingot in one direction is much smaller than its size in the other two directions; collectively, they are referred to as thin plate-shaped ingots.

[0005] Because of the deviations in the seed crystal itself and between the seed crystal and the mold, there is a certain degree of deviation between the large plane of the thin plate-shaped single crystal ingot and the ideal crystal orientation. Therefore, it is necessary to adjust the orientation deviation of the single crystal ingot before rounding it to obtain a crystal blank with accurate orientation.

[0006] In related technologies, the main method for correcting orientation deviations in single-crystal ingots employs a combination of conventional grinding and sinusoidal chucks. Specifically, this method involves first performing X-ray orientation on the single-crystal ingot, then using a conventional grinding machine combined with a sinusoidal chuck to adjust and grind the two components of the orientation deviation separately. This method requires two grinding operations and flipping the single-crystal ingot, resulting in a relatively long overall processing time. Summary of the Invention

[0007] In order to shorten the processing cycle for correcting orientation deviations in single crystal ingots, this application provides a method for correcting orientation deviations in thin plate-shaped single crystal ingots.

[0008] Firstly, this application provides a method for correcting orientation deviations in thin plate-shaped single crystal ingots, which employs the following technical solution:

[0009] A method for correcting orientation deviations in thin plate-shaped single crystal ingots includes the following steps:

[0010] S1. Draw a plane rectangular coordinate system on the back side of the surface to be diffracted on the single crystal ingot;

[0011] S2. Perform X-ray diffraction orientation on the surface to be diffracted and calculate the first component α of the orientation deviation;

[0012] S3. Rotate the single crystal ingot 90° clockwise and then perform X-ray diffraction orientation on the surface to be diffracted, and calculate the second component β of the orientation deviation.

[0013] S4. Calculate the orientation deviation angle γ and the trace angle δ using the first component α and the second component β;

[0014] S5. Draw traces in the Cartesian coordinate system on the back of the single crystal ingot, attach the diffraction surface of the single crystal ingot to the pad, adjust the tilt angle on the plane grinding machine equipped with a sinusoidal chuck, firmly attach the pad and the single crystal ingot to the sinusoidal chuck, and grind the upper surface of the single crystal ingot flat according to the drawn traces.

[0015] By adopting the above technical solution, firstly, a planar rectangular coordinate system is drawn on the back side of the surface to be diffracted in the single crystal ingot, which facilitates the diffraction orientation of the surface to be diffracted. The diffraction orientation is achieved by using an X-ray diffractometer to precisely and quickly measure the angle between the atomic plane inside the single crystal ingot and the processed surface, in order to calculate the first component α and the second component β of the orientation deviation. Then, the orientation deviation angle γ and the trace angle δ are calculated by deriving formulas, and the trace is drawn. The back side of the surface to be diffracted is then ground to correct the orientation deviation of the thin plate-shaped single crystal ingot.

[0016] Preferably, in step S2, the diffraction orientation is such that the x-axis of the Cartesian coordinate system is parallel to the diffraction plane, and the X-rays are incident from the negative x-axis side and diffracted from the positive x-axis side.

[0017] By adopting the above technical solution, during diffraction orientation, the x-axis is made parallel to the diffraction plane, and the X-rays are incident from the negative x-axis side and diffracted from the positive x-axis side, so as to determine the angle of the maximum diffraction peak in step S2.

[0018] As a preferred embodiment, the first component α of the orientation deviation is calculated as follows: the Bragg angle θ of the crystal plane to be diffracted and the angle θ1 corresponding to the goniometer when the maximum diffraction peak of the surface to be diffracted is measured in step S2 are determined, and the difference between the angle θ1 corresponding to the maximum diffraction peak and the Bragg angle θ is the first component α of the orientation deviation.

[0019] By adopting the above technical solution, the Bragg angle θ is the angle between the incident X-ray and the crystal plane to be measured, and the corresponding Bragg angle θ can be selected from the corresponding PDF card. The diffraction angle θ1 corresponding to the maximum diffraction peak can be obtained by observing the reading in the goniometer. The first component α of the orientation deviation is calculated by using the diffraction angle θ1 corresponding to the maximum diffraction peak and the Bragg angle θ.

[0020] Preferably, in step S3, the diffraction orientation, the single crystal ingot is rotated 90° clockwise so that the y-axis of the Cartesian coordinate system is parallel to the ideal diffraction plane, and the X-rays are incident from the negative y-axis side and diffracted from the positive y-axis side.

[0021] By adopting the above technical solution, in step S3 diffraction orientation, the single crystal ingot is rotated 90° clockwise around the sample stage normal, so that the y-axis is parallel to the ideal diffraction plane, and the X-rays are incident from the negative y-axis side and diffracted from the positive y-axis side, so as to determine the angle of the corresponding diffraction angle when the maximum diffraction peak is reached in step S3.

[0022] As a preferred embodiment, the second component β of the orientation deviation is determined by measuring the angle θ2 corresponding to the maximum diffraction peak on the surface to be diffracted in step S3. The difference between the angle θ2 corresponding to the maximum diffraction peak and the Bragg angle θ is the second component β of the orientation deviation.

[0023] By adopting the above technical solution, the diffraction angle θ2 corresponding to the maximum diffraction peak of the crystal plane to be diffracted in step S3 is observed using a goniometer, and the second component β is calculated based on the diffraction angle θ2 and the Bragg angle θ corresponding to the maximum diffraction peak.

[0024] Preferably, the formula for calculating the orientation deviation angle γ is tan 2 (γ)=tan 2 (α)+tan 2 (β).

[0025] By adopting the above technical solution, the orientation deviation angle is the angle between the normal of the ideal crystal plane and the normal of the sample surface.

[0026] like Figure 2 As shown, the normal to the crystal plane to be diffracted in the single crystal ingot is ON. Let the normal to the actual surface of the single crystal ingot be OP. Then, a cuboid OQTSNBPA can be constructed with ON as the edge and OP as the body diagonal. According to the physical definition of single crystal ingot diffraction: ∠NOP is the orientation deviation angle γ of the surface to be measured; ∠NOA is the component of the orientation deviation when the diffraction plane is parallel to plane ONA, which is the first component α; ∠NOB is the second component β of the orientation deviation when the diffraction plane is parallel to plane NOQB.

[0027] From geometry, we know that in right triangle NOP: |NP| = |ON| * tan(γ), similarly, in right triangle NOA: |NA| = |ON| * tan(α), similarly, in right triangle NOB: |NB| = |ON| * tan(β). In right triangle NPA, by the Pythagorean theorem, |NP| 2 =|NA| 2 +|AP| 2Given that |NB| = |AP|, substituting into the above equation, we get: |NP| 2 =|NA| 2 +|NB| 2 derive tan 2 (γ)=tan 2 (α)+tan 2 (β). Therefore, the formula for calculating the orientation deviation angle γ is tan 2 (γ)=tan 2 (α)+tan 2 (β).

[0028] Preferably, the formula for calculating the trace angle δ is tan(δ)=tan(β) / tan(α), and the calculated trace angle δ only takes the absolute value.

[0029] By adopting the above technical solution, the trace angle is the angle between the trace and the x-axis. By calculating the trace angle δ, it is convenient to draw the trace in the plane rectangular coordinate system on the back of the single crystal ingot, and then adjust the orientation deviation of the thin plate-shaped single crystal ingot according to the trace.

[0030] like Figure 2 As shown, in right triangle ANP, ∠ANP is the trace angle δ. In right triangle ANP, Tan(∠ANP)=Tan(δ)=|AP| / |NA|, |AP|=|NB|, |NB|=|ON|*tan(β), |AP|=|ON|*tan(β), |NA|=|ON|*tan(α), thus Tan(δ)=tan(β) / tan(α) is derived. Therefore, the formula for calculating the trace angle δ is tan(δ)=tan(β) / tan(α).

[0031] As a preferred embodiment, the rules for drawing the trace in the Cartesian coordinate system on the back side of the single crystal ingot in step S5 are as follows: when α > 0 and β > 0, the trace angle δ is located in the first quadrant of the Cartesian coordinate system in step S1; draw the ray OP through the origin O in the first quadrant, so that the angle between OP and the positive x-axis is the trace angle δ, and draw the backward extension line OH of OP, which is the trace;

[0032] When α > 0 and β < 0, the trace angle δ is located in the fourth quadrant of the rectangular coordinate system in step S1; draw a ray OP through the origin O in the fourth quadrant, so that the angle between OP and the positive x-axis is the trace angle δ, and draw the reverse extension line OH of OP, HP is the trace.

[0033] When α < 0 and β > 0, the trace angle δ is located in the second quadrant of the rectangular coordinate system in step S1; draw a ray OP through the origin O in the second quadrant, so that the angle between OP and the negative x-axis is the trace angle δ, and draw the reverse extension line OH of OP, HP is the trace;

[0034] When α < 0 and β < 0, the trace angle δ is located in the third quadrant of the rectangular coordinate system in step S1; draw a ray OP through the origin O in the third quadrant, such that the angle between OP and the negative x-axis is the trace angle δ, and draw the reverse extension line OH of OP, which is the trace.

[0035] Preferably, in step S5, when the diffraction plane of the single crystal ingot is bonded to the pad, the traces drawn are parallel to a set of edges of the pad.

[0036] By adopting the above technical solution, when the diffraction surface of the single crystal ingot is bonded to the pad, the trace drawn is parallel to the edge of the pad, so as to ensure that the orientation deviation angle is directly corrected.

[0037] Preferably, in step S5, the pad block and the single crystal ingot are firmly attached to the sinusoidal chuck, so that the trace is parallel to the inclined edge of the sinusoidal chuck.

[0038] By adopting the above technical solution, the pad block and the single crystal ingot are firmly attached to the sinusoidal chuck, so that the trace is parallel to the inclined edge of the sinusoidal chuck, thereby ensuring that the orientation deviation angle is directly corrected.

[0039] In summary, this application includes at least one of the following beneficial technical effects:

[0040] (1) This application directly corrects the orientation deviation angle, and the entire correction process can be completed in one go. The process is simple and the operation is relatively convenient. There is no need to perform two grindings or to flip the single crystal ingot during the grinding process, which shortens the processing cycle of correcting the orientation deviation of the single crystal ingot. The correction time is as low as 4.1-4.0h.

[0041] (2) Using the method of this application for correcting orientation deviation in thin plate-shaped single crystal ingots, the deviation angle of the orientation deviation angle of the ground single crystal ingot is verified to be only 4′-5′, which has high accuracy, reduces waste generation, and saves production costs. In addition, this application only grinds one side of the single crystal ingot and does not perform grinding after flipping, which can further reduce crystal material consumption and reduce costs. Attached Figure Description

[0042] Figure 1 This application's method flowchart;

[0043] Figure 2 A schematic diagram illustrating the principle of this application;

[0044] Figure 3 Draw a schematic diagram of a rectangular coordinate system;

[0045] Figure 4 A schematic diagram of the traces drawn in Example 1;

[0046] Figure 5A schematic diagram of the traces drawn in Example 2;

[0047] Figure 6 Schematic diagrams of traces drawn in Examples 3 and 5;

[0048] Figure 7 A schematic diagram of the traces drawn in Example 4.

[0049] Among them, 1 is the single crystal ingot to be repaired; 11 is the surface to be diffracted; and 12 is the back side of the surface to be diffracted. Detailed Implementation

[0050] The present application will be further described in detail below with reference to the accompanying drawings and specific embodiments.

[0051] In this application, the rectangular coordinate system and traces drawn on the surface of the single crystal ingot are both drawn with a pencil.

[0052] Example 1

[0053] The method for correcting orientation deviations in a thin plate-shaped single crystal ingot in Example 1 is prepared by the following steps: The single crystal ingot to be corrected is a thin plate-shaped gallium oxide, and the large plane of the ingot, i.e. the surface to be diffracted, is the (001) crystal plane. Therefore, (002) is selected from the gallium oxide PDF card for diffraction orientation, with a corresponding Bragg angle θ = 15°53′.

[0054] Draw a plane rectangular coordinate system on the back of the surface of the crystal ingot to be diffracted using a pencil and a set square.

[0055] Secure the crystal ingot with the diffracted surface facing the sample stage. Adjust the ingot so that the x-axis of the coordinate system is parallel to the theoretical diffraction plane, and direct the X-rays from the negative x-axis side for diffraction from the positive x-axis side. The diffraction orientation is measured to be θ1 = 16°53′. Calculate the first deflection component: α = 16°53′ - 15°53′ = 1°.

[0056] Rotate the ingot clockwise by 90° so that the y-axis of the above coordinate system is parallel to the theoretical diffraction plane, and make the X-rays incident from the negative y-axis side and diffracted from the positive y-axis side. The diffraction orientation is measured to be θ2 = 17°5′. Calculate the second deflection angle component: β = 17°5′ - 15°53′ = 1°12′.

[0057] Calculate the orientation deviation angle γ: tan 2 (γ)=tan 2 (1°)+tan 2 (1°12′), we can calculate γ=1°34′.

[0058] Calculate the trace angle δ: tan(δ)=tan(1°12′) / tan(1°), and we get δ=50°12′.

[0059] When α > 0 and β > 0, the trace angle δ lies in the first quadrant of the rectangular coordinate system described in step S1. A ray OP is drawn through the origin O in the first quadrant, with the angle between OP and the positive x-axis being a trace angle δ = 50°12′. The backward extension OH of OP is then drawn, and the trace is drawn on the back side of the surface to be diffracted on the single crystal ingot, as shown below. Figure 4 HP in the equation represents the desired trajectory.

[0060] The diffraction surface of the crystal ingot is bonded to a cuboid pad with paraffin wax, and the trace HP is made parallel to a set of edges of the pad.

[0061] Adjust the sine chuck of the surface grinder to an inclination angle γ = 1°34′, and ensure that the edge of the pad parallel to the trace HP is parallel to the inclination edge of the sine chuck, while ensuring that H is on the high side of the chuck and P is on the low side. Grind the back of the ingot until it is flat, and the finishing is complete.

[0062] Example 2

[0063] The method for correcting orientation deviations in thin plate-shaped single crystal ingots in Example 2 was prepared through the following steps:

[0064] In Example 2, the ingot to be diffracted was gallium oxide. Orientation testing and calculation yielded the first component of the orientation deviation angle: α = 1°20′, β = -1°12′. Therefore, the orientation deviation angle γ = 1°48′ and the trace angle δ = 41°59′ were calculated.

[0065] When α > 0 and β < 0, the trace angle δ lies in the fourth quadrant of the rectangular coordinate system described in step S1. Draw ray OP through the origin O in the fourth quadrant, making the angle between OP and the positive x-axis δ = 41°59′. Extend OP backwards to form the trace OH. Draw the trace on the back side of the surface to be diffracted on the single crystal ingot, as shown below. Figure 5 HP in the equation represents the desired trajectory.

[0066] The rest is the same as in Example 1.

[0067] Example 3

[0068] The method for correcting orientation deviation in a thin plate-shaped single crystal ingot in Example 3 is prepared through the following steps: the ingot to be diffracted is gallium oxide, and the first components of the orientation deviation angle α = -1°21′ and β = 1°14′ are obtained through orientation testing and calculation. Therefore, the orientation deviation angle γ = 1°50′ and the trace angle δ = 42°24′ are calculated.

[0069] When α < 0 and β > 0, the trace angle δ lies in the second quadrant of the rectangular coordinate system described in step S1. A ray OP is drawn through the origin O in the second quadrant, with the angle between OP and the negative x-axis being a trace angle δ = 42°24′. The backward extension OH of OP is then drawn, and the trace is drawn on the back side of the surface to be diffracted on the single crystal ingot, as shown below. Figure 6 HP in the equation represents the desired trajectory.

[0070] The rest is the same as in Example 1.

[0071] Example 4

[0072] The method for correcting orientation deviation in a thin plate-shaped single crystal ingot in Example 4 is prepared through the following steps: the ingot to be diffracted is gallium oxide, and the first components of the orientation deviation angle α = -1°22′ and β = -1°28′ are obtained through orientation testing and calculation. Therefore, the orientation deviation angle γ = 2°0′ and the trace angle δ = 47°1′ are calculated.

[0073] When α < 0 and β < 0, the trace angle δ lies in the third quadrant of the rectangular coordinate system described in step S1. Draw ray OP through the origin O in the third quadrant, making the angle between OP and the negative x-axis δ = 47°1′. Extend OP backwards to form the trace OH. Draw the trace on the back side of the surface to be diffracted on the single crystal ingot, as shown below. Figure 7 HP in the equation represents the desired trajectory.

[0074] The rest is the same as in Example 1.

[0075] Example 5

[0076] The method for correcting orientation deviations in a thin-plate single-crystal ingot in Example 5 was prepared by the following steps: The single-crystal ingot to be corrected was a thin-plate 4H-SiC, and the large plane of the ingot, i.e. the surface to be diffracted, was the (0001) crystal plane. Therefore, (004) was selected from the PDF card of 4H-SiC for diffraction orientation, and the corresponding Bragg angle θ = 17°51′.

[0077] Draw a plane rectangular coordinate system on the back of the surface of the crystal ingot to be diffracted using a pencil and a set square.

[0078] Secure the crystal ingot with the surface to be diffracted facing the sample stage. Adjust the ingot so that the x-axis of the coordinate system is parallel to the theoretical diffraction plane, and direct the X-rays from the negative x-axis side for diffraction from the positive x-axis side. The diffraction orientation is measured to be θ1 = 16°30′. Calculate the first deflection component: α = 16°30′ - 17°51′ = -1°21′.

[0079] Rotate the ingot 90° clockwise so that the y-axis of the above coordinate system is parallel to the theoretical diffraction plane, and make the X-rays incident from the negative y-axis side and diffracted from the positive y-axis side. The diffraction orientation is measured to be θ2 = 19°5′. Calculate the second deflection component: β = 19°5′ - 17°51′ = 1°14′.

[0080] Calculate the orientation deviation angle γ: tan 2 (γ)=tan 2 (-1°21′)+tan 2 (1°14′), calculated to be γ=1°50′.

[0081] Calculate the trace angle δ: tan(δ)=tan(1°14′) / tan(1°21′), and we get δ=42°24′.

[0082] When α < 0 and β > 0, the trace angle δ lies in the second quadrant of the rectangular coordinate system described in step S1. A ray OP is drawn through the origin O in the second quadrant, with the angle between OP and the negative x-axis being a trace angle δ = 42°24′. The backward extension OH of OP is then drawn, and the trace is drawn on the back side of the surface to be diffracted on the single crystal ingot, as shown below. Figure 6 HP in the equation represents the desired trajectory.

[0083] The diffraction surface of the crystal ingot is bonded to a cuboid pad with paraffin wax, and the trace HP is made parallel to a set of edges of the pad.

[0084] Adjust the sine chuck of the surface grinder to an inclination angle γ = 1°50′, and ensure that the edge of the pad parallel to the trace HP is parallel to the inclination edge of the sine chuck, while ensuring that H is on the high side of the chuck and P is on the low side. Grind the back of the ingot until it is flat, and the finishing is complete.

[0085] Comparative Example 1

[0086] The method for correcting orientation deviations in thin plate-shaped single crystal ingots, as described in Comparative Example 1, was prepared through the following steps:

[0087] S1. Draw a plane rectangular coordinate system on the back side of the crystal plane to be diffracted on the single crystal ingot;

[0088] S2. Orient the crystal plane to be diffracted and calculate the first component α of the orientation deviation.

[0089] S3. Rotate the single crystal ingot 90° clockwise and perform diffraction orientation on the crystal plane to be diffracted, calculating the second component β of the orientation deviation; S4. Attach the diffraction plane of the single crystal ingot to the pad, adjust the tilt angle on a conventional surface grinder equipped with a sinusoidal chuck to be equal to the first component α of the orientation deviation angle, and firmly attach the pad and single crystal ingot to the sinusoidal chuck. Grind the upper surface of the single crystal ingot until smooth. After grinding, flip it over, adjust the tilt angle of the sinusoidal chuck to the second component β of the orientation deviation angle, rotate the single crystal ingot 90°, and grind again until the back side is smooth.

[0090] The repaired surface was then subjected to X-ray diffraction orientation again.

[0091] Performance testing

[0092] The diffraction orientation verification of different methods used in Examples 1-5 and Comparative Example 1 for correcting orientation deviations in thin plate-shaped single crystal ingots was carried out using the following methods. The test results are shown in Table 1.

[0093] Orientation deviation angle: The orientation deviation angle is calculated again by performing diffraction verification on the ground single crystal ingot.

[0094] Repair time: Record the time from the start to the end of the repair.

[0095] Table 1. Performance test results of different methods used for correcting orientation deviations in thin plate-shaped monocrystalline ingots.

[0096]

[0097]

[0098] The test results in Table 1 show that, using the method of this application for correcting orientation deviations in thin-plate single-crystal ingots, the verified orientation deviation angle of the ground single-crystal ingot is only 4′-5′, while the verified orientation deviation angle of the ground single-crystal ingot in Comparative Example 1 is 13′. The crystal orientation accuracy of the single-crystal ingots obtained in Examples 1-5 is significantly higher than that in Comparative Example 1. This indicates that the method of this application for correcting orientation deviations in thin-plate single-crystal ingots has high accuracy, reduces waste generation, and saves production costs. In addition, this application only grinds one side of the single-crystal ingot, eliminating the need for flipping it for grinding, which further reduces crystal material loss and lowers costs.

[0099] The method of this application for correcting orientation deviations in thin plate-shaped single crystal ingots takes 4.0-4.1 hours to correct, while the correcting time for Comparative Example 1 is 8.5 hours, which is significantly shorter than that of Comparative Example 1. This indicates that the method of this application for correcting orientation deviations in thin plate-shaped single crystal ingots can significantly shorten the processing cycle for correcting orientation deviations in single crystal ingots by omitting one ingot turning and grinding.

[0100] This specific embodiment is merely an explanation of this application and is not intended to limit it. After reading this specification, those skilled in the art can make modifications to this embodiment without contributing any inventive step, but such modifications are protected by patent law as long as they fall within the scope of the claims of this application.

Claims

1. A method for correcting a crystal orientation deviation of a thin-plate-like single crystal ingot, characterized by, The method comprises the following steps: S1, drawing a plane rectangular coordinate system on the back surface of the single crystal ingot to be diffracted; S2, performing X-ray diffraction orientation on the surface to be diffracted, and calculating a first component α of the orientation deviation; S3, rotating the single crystal ingot by 90° clockwise, performing X-ray diffraction orientation on the surface to be diffracted again, and calculating a second component β of the orientation deviation; S4, calculating an orientation deviation angle γ and a trace angle δ by using the first component α and the second component β; S5, drawing a trace in the plane rectangular coordinate system on the back surface of the single crystal ingot, bonding the diffracted surface of the single crystal ingot to a cushion block, adjusting an inclination angle on a plane grinding machine equipped with a sine chuck, sucking the cushion block and the single crystal ingot to the sine chuck, and grinding the upper surface of the single crystal ingot according to the drawn trace. In the step S2, the x axis of the plane rectangular coordinate system is parallel to the diffraction plane, and the X-ray is incident from the negative x axis side and diffracted from the positive x axis side. The first component α of the orientation deviation is calculated by determining the Bragg angle θ of the crystal face to be diffracted and the angle θ1 corresponding to the goniometer when the maximum diffraction peak of the surface to be diffracted is measured in the step S2, and the difference between the angle θ1 corresponding to the maximum diffraction peak and the Bragg angle θ is the first component α of the orientation deviation. In the step S3, the single crystal ingot is rotated by 90° clockwise, the y axis of the plane rectangular coordinate system is parallel to the ideal diffraction plane, and the X-ray is incident from the negative y axis side and diffracted from the positive y axis side. The second component β of the orientation deviation is measured by measuring the angle θ2 corresponding to the goniometer when the maximum diffraction peak of the surface to be diffracted in the step S3 is measured, and the difference between the angle θ2 corresponding to the maximum diffraction peak and the Bragg angle θ is the second component β of the orientation deviation. The calculation formula of the orientation deviation angle γ is tan 2 (γ) = tan 2 (α) + tan 2 (β); and the calculation formula of the trace angle δ is tan (δ) = tan (β) / tan (α); The rule for drawing the trace in the plane rectangular coordinate system on the back surface of the single crystal ingot in the step S5 is as follows: When α>0 and β>0, the trace angle δ is located in the first quadrant of the rectangular coordinate system in the step S1, a ray OP is drawn in the first quadrant through the origin O, the angle between OP and the positive x axis is the trace angle δ, the reverse extension line OH of OP is drawn, and HP is the trace; When α>0 and β<0, the trace angle δ is located in the fourth quadrant of the rectangular coordinate system in the step S1, a ray OP is drawn in the fourth quadrant through the origin O, the angle between OP and the positive x axis is the trace angle δ, the reverse extension line OH of OP is drawn, and HP is the trace; When α<0 and β>0, the trace angle δ is located in the second quadrant of the rectangular coordinate system in the step S1, a ray OP is drawn in the second quadrant through the origin O, the angle between OP and the negative x axis is the trace angle δ, the reverse extension line OH of OP is drawn, and HP is the trace; When α<0 and β<0, the trace angle δ is located in the third quadrant of the rectangular coordinate system in the step S1, a ray OP is drawn in the third quadrant through the origin O, the angle between OP and the negative x axis is the trace angle δ, the reverse extension line OH of OP is drawn, and HP is the trace.

2. The method for correcting the deviation of the grain direction of a thin-plate-like single crystal ingot according to claim 1, characterized by: In the step S5, the drawn trace is parallel to a set of edges of the cushion block when the diffracted surface of the single crystal ingot is bonded to the cushion block.

3. The method for correcting the deviation of the grain direction of a thin-plate-like single crystal ingot according to Claim 1, characterized by: In the step S5, the pad is fixed together with the single crystal ingot on the sine chuck, and the trace is parallel to the inclined edge of the sine chuck.

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