A magnetic resonance near-field super-resolution sensing unit with high-order harmonic suppression

Abstract

The application discloses a magnetic resonance near-field super-resolution sensing unit with high-order harmonic suppression, comprising a first layer metal patch, a first dielectric substrate arranged in close connection with the first layer metal patch, a second layer metal ground arranged in close connection with the first dielectric substrate, a second dielectric substrate arranged in close connection with the second layer metal ground, and a third layer metal patch arranged in close connection with the second dielectric substrate; the first layer metal patch comprises a first sensing horizontal arm and a second sensing horizontal arm, wherein the first sensing horizontal arm and the second sensing horizontal arm are arranged in parallel and spaced apart, and a subwavelength slit is formed between the first sensing horizontal arm and the second sensing horizontal arm; the third layer metal patch comprises a microstrip feed line and a resonance structure, and the third layer metal patch is a symmetrical structure. According to the application, a good dynamic range and low loss are achieved, and the symmetrical structure can effectively suppress the influence of high-order harmonics and realize wide-spectrum operation.

Description

Technical Field

[0001] This invention relates to the technical field of near-field super-resolution imaging sensing, and particularly to a magnetic resonant near-field super-resolution sensing unit with high-order harmonic suppression. Background Technology

[0002] In recent years, microwave, millimeter-wave, and terahertz imaging have become a hot topic. Microwaves, millimeter-waves, and terahertz waves can penetrate most non-metallic materials, have low photon energy, and emit no ionizing radiation. Furthermore, parts of the microwave, millimeter-wave, and terahertz wave spectrum cover the vibrational and rotational frequencies of many biomolecules, allowing for the detection of biomolecules and monitoring of their behavior through resonant absorption. Based on these characteristics, which differ from other electromagnetic frequency bands, microwaves, millimeter-waves, and terahertz waves have demonstrated unique advantages in near-field imaging, particularly in materials characterization, semiconductor device performance analysis, macromolecule detection, and biological sample imaging. However, compared to infrared, visible light, and ultraviolet light, microwaves, millimeter-waves, and terahertz waves have excessively long wavelengths and insufficient spatial resolution, especially for targets with dimensions at the micrometer and nanometer scale, such as nanomaterials, biomolecules, and cells, which cannot be directly applied. Near-field sensors with super-resolution can effectively solve these problems. This invention proposes a magnetic resonant near-field super-resolution sensing unit with high-order harmonic suppression. By adjusting the operating frequency according to application requirements, micrometer and nanometer-scale spatial resolution can be achieved. Summary of the Invention

[0003] To address the shortcomings of existing technologies, the present invention aims to provide a magnetic resonant near-field super-resolution sensing unit with high-order harmonic suppression, exhibiting good dynamic range and low loss. Its symmetrical structure effectively suppresses the effects of high-order harmonics, enabling wide-spectrum operation. To achieve the above-mentioned objectives and other advantages of the present invention, a magnetic resonant near-field super-resolution sensing unit with high-order harmonic suppression is provided, comprising:

[0004] A first metal patch, a first dielectric substrate bonded to the first metal patch, a second metal ground layer bonded to the first dielectric substrate, a second dielectric substrate bonded to the second metal ground layer, and a third metal patch bonded to the second dielectric substrate;

[0005] The first layer of metal patch includes a first sensing arm and a second sensing arm, wherein the first sensing arm and the second sensing arm are parallel to each other and spaced apart, and a subwavelength slit is formed between the first sensing arm and the second sensing arm to form a subwavelength aperture for near-field sensing.

[0006] The third metal patch includes a microstrip feed line and a resonant structure, and the third metal patch has a symmetrical structure.

[0007] Preferably, the microstrip feed line has a Y-shaped structure, and the microstrip feed line includes a straight feed line and a V-shaped feed line integrally connected with the straight feed line.

[0008] Preferably, the resonant structure is a ring structure, which includes a V-shaped coupling structure and a metal strip integrally connected to the V-shaped coupling structure. The V-shaped coupling structure is matched with the V-shaped feed line.

[0009] Preferably, the third metal patch includes multiple microstrip feed lines and resonant structures, which are staggered and symmetrically arranged.

[0010] Preferably, the first dielectric substrate and the second dielectric substrate are provided with a first metallized through-hole, a second metallized through-hole, a third metallized through-hole and a fourth metallized through-hole.

[0011] Preferably, the V-shaped coupling structure, the metal strip, the first metallized through hole, the third metallized through hole, and the first sensing cross arm form a metal ring magnetic resonant structure.

[0012] Preferably, a rectangular window is provided on the second metal ground layer, through which the first metallized through hole, the second metallized through hole, the third metallized through hole and the fourth metallized through hole all pass.

[0013] Compared with the prior art, the beneficial effects of this invention are:

[0014] (1) The present invention is a magnetic resonant near-field super-resolution sensing unit with high-order harmonic suppression, with an operating frequency of 6GHz, a lateral resolution of λ / 125, and a resolution of 0.4mm, breaking through the diffraction limit and achieving super-resolution.

[0015] (2) By scaling the structural dimensions, the operating frequency of the sensing unit can cover microwave, millimeter wave and terahertz bands in order to achieve micron and nanometer resolution.

[0016] (3) It can effectively suppress second harmonics and avoid interference caused by high-order harmonics moving into the frequency band during imaging, so as to achieve wide-band operation. The metal ring magnetic resonance structure can be flexibly adjusted to meet different processing requirements. Attached Figure Description

[0017] Figure 1 This is a schematic diagram of the magnetic resonant near-field super-resolution sensing unit with high-order harmonic suppression according to the present invention.

[0018] Figure 2 A side view of the magnetic resonant near-field super-resolution sensing unit with high-order harmonic suppression according to the present invention;

[0019] Figure 3A perspective view of a magnetic resonant near-field super-resolution sensing unit with high-order harmonic suppression according to the present invention;

[0020] Figure 4 This is a schematic diagram of the first layer metal patch of the magnetic resonant near-field super-resolution sensing unit with high-order harmonic suppression according to the present invention.

[0021] Figure 5 A schematic diagram of the metal ground of the magnetic resonant near-field super-resolution sensing unit with high-order harmonic suppression according to the present invention;

[0022] Figure 6 This is a schematic diagram of the resonant structure of the magnetic resonant near-field super-resolution sensing unit with high-order harmonic suppression according to the present invention.

[0023] Figure 7 A schematic diagram of the feeding structure of the magnetic resonant near-field super-resolution sensing unit with high-order harmonic suppression according to the present invention.

[0024] Figure 8 This is a schematic diagram showing the position of the feeding structure and part of the resonant structure of the magnetic resonant near-field super-resolution sensing unit with high-order harmonic suppression according to the present invention.

[0025] Figure 9 A single metal ring resonator overall diagram of a magnetic resonant near-field super-resolution sensing unit with high-order harmonic suppression according to the present invention;

[0026] Figure 10 A schematic diagram of the two-metal ring resonator of the magnetic resonant near-field super-resolution sensing unit with high-order harmonic suppression according to the present invention.

[0027] Figure 11 A schematic diagram showing the placement of a target object in the sensing region of a magnetic resonant near-field super-resolution sensing unit with high-order harmonic suppression according to the present invention;

[0028] Figure 12 The S-parameter curve showing the resonant frequency shift after the placement of the magnetic resonant near-field super-resolution sensing unit with high-order harmonic suppression according to the present invention.

[0029] Figure 13 A schematic diagram of the target movement for resolution testing using a magnetic resonant near-field super-resolution sensing unit with high-order harmonic suppression according to the present invention;

[0030] Figure 14 S-parameter curves for resolution testing of the magnetic resonant near-field super-resolution sensing unit with high-order harmonic suppression according to the present invention;

[0031] Figure 15This is a schematic diagram of the response distance test of the magnetic resonant near-field super-resolution sensing unit with high-order harmonic suppression according to the present invention.

[0032] Figure 16 The response distance test S-parameter curve of the magnetic resonant near-field super-resolution sensing unit with high-order harmonic suppression according to the present invention;

[0033] Figure 17 The current distribution on the first-order harmonic two-resonance structure of the magnetic resonant near-field super-resolution sensing unit with high-order harmonic suppression according to the present invention;

[0034] Figure 18 The current distribution on the second-order harmonic two-resonance structure of the magnetic resonant near-field super-resolution sensing unit with high-order harmonic suppression according to the present invention;

[0035] Figure 19 This is a schematic diagram showing the relative position of the sensing region and the sensing unit of the magnetic resonant near-field super-resolution sensing unit with high-order harmonic suppression according to the present invention.

[0036] Figure 20 This is a side view of the sensing region and the relative position of the sensing unit of the magnetic resonant near-field super-resolution sensing unit with high-order harmonic suppression according to the present invention. Detailed Implementation

[0037] The technical solutions of the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some embodiments of the present invention, and not all embodiments. Based on the embodiments of the present invention, all other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of the present invention.

[0038] Reference Figure 1-20 A magnetic resonant near-field super-resolution sensing unit 100 with high-order harmonic suppression includes: the sensing unit 100 operates at 6 GHz, can achieve 0.4 mm resolution, has a 10 dB dynamic range, and a 1 mm response distance.

[0039] A first metal patch 110, a first dielectric substrate 410 attached to the first metal patch 110, a second metal ground 211 attached to the first dielectric substrate 410, a second dielectric substrate 510 attached to the second metal ground 211, and a third metal patch attached to the second dielectric substrate 510.

[0040] The first metal patch 110 includes a first sensing arm 111 and a second sensing arm 112, wherein the first sensing arm 111 and the second sensing arm 112 are parallel to each other and spaced apart. A subwavelength slit is formed between the first sensing arm 111 and the second sensing arm 112. The subwavelength slit constrains the electric field to form a subwavelength aperture for near-field sensing, thereby achieving super-resolution. Its sensing area is located above the slit. The shape of the first metal patch 110 is not limited to two metal arms. It can be a double-opening metal ring, a hyperbola structure, or any other structure that constrains the electromagnetic field to form a subwavelength aperture for near-field sensing. The first metal patch 110 includes a first sensing arm 111 and a second sensing arm 112, forming a subwavelength aperture size that is much smaller than the working wavelength to achieve super-resolution sensing.

[0041] The first sensing arm 111 and the second sensing arm 112 are separated from the third layer metal patch by metallized vias, belonging to different layers to avoid mutual interference between the power supply structure and the sensing.

[0042] The third metal patch includes a microstrip feed line 310 and a resonant structure 320. The third metal patch has a symmetrical structure. The microstrip feed line 310 has a Y-shaped structure, and its function is to couple and feed the resonant structure 320. Its shape is not limited to Y-shape; its feeding method can be adjusted according to application requirements. The microstrip feed line 310 includes a straight feed line 311 and a V-shaped feed line 312 integrally connected to the straight feed line 311. The resonant structure 320 has a ring structure, and its shape can be any shape, such as circular, square, or elliptical, to achieve a closed loop. The ring structure is symmetrical. The two metal ring structures are coupled to each other through the first sensing arm 111 and the second sensing arm 112. The microstrip line and the ring resonant structure are coupled and fed through the feeding structure on the microstrip line and the coupling part of the ring resonant structure. The resonant structure 320 includes a V-shaped coupling structure 321 and a metal strip line 322 integrally connected to the V-shaped coupling structure 321. The V-shaped coupling structure 321 is matched with the V-shaped feed line 312, realizing electromagnetic coupling and isolation between the feeding structure and the resonant structure.

[0043] Furthermore, the third metal patch includes multiple microstrip feed lines 310 and resonant structures 320, which are staggered and symmetrically arranged.

[0044] Furthermore, the first dielectric substrate 410 and the second dielectric substrate 510 are provided with a first metallized through-hole 611, a second metallized through-hole 612, a third metallized through-hole 613 and a fourth metallized through-hole 614.

[0045] Furthermore, the V-shaped coupling structure 321, the metal strip 322, the first metallized through-hole 611, the third metallized through-hole 613, and the first sensing cross arm 111 form a metal ring magnetic resonant structure 710. The first metal ring magnetic resonant structure 720, which is symmetrical to the metal ring magnetic resonant structure 710, can also achieve magnetic resonance. The first V-shaped coupling structure 341, the first metal strip 342, the second metallized through-hole 612, the fourth metallized through-hole 614, and the second sensing cross arm 112 of the first metal ring magnetic resonant structure 720 form the first metal ring magnetic resonant structure 720. The metal ring magnetic resonant structure 710 and the first metal ring magnetic resonant structure 720 have a mirror-symmetric spatial positional relationship, realizing the cancellation of the second harmonic on the first layer of metal patch 110 of subwavelength sensing. The change of the electromagnetic properties of the target object located in the sensing region 810 will not cause the second harmonic spectrum shift, which can effectively suppress the influence of the second harmonic on the sensing spectrum.

[0046] Furthermore, a rectangular window 212 is provided on the second metal ground 211. The rectangular window 212 facilitates the loading of metallized through holes and avoids parasitic effects and additional interference to the sensing area 810 caused by the first sensing cross arm 111 and the second sensing cross arm 112, the first metallized through hole 611, the second metallized through hole 612, the third metallized through hole 613 and the fourth metallized through hole 613, and some metal strip lines of the metal ground. The first metallized through hole 611, the second metallized through hole 612, the third metallized through hole 613 and the fourth metallized through hole 613 all pass through the rectangular window 212.

[0047] The number of devices and processing scale described herein are for the purpose of simplifying the description of the invention, and applications, modifications and variations thereof will be apparent to those skilled in the art.

[0048] Although embodiments of the present invention have been disclosed above, they are not limited to the applications listed in the specification and embodiments. They can be applied to various fields suitable for the present invention. For those skilled in the art, other modifications can be easily made. Therefore, without departing from the general concept defined by the claims and their equivalents, the present invention is not limited to the specific details and illustrations shown and described herein.

Claims

1. A magnetic resonance near-field super-resolution sensing cell with high order harmonic rejection, characterized in that, The application relates to a near-field sensor, which comprises the following parts: a first layer of metal patches (110), a first dielectric substrate (410) arranged in close contact with the first layer of metal patches (110), a second layer of metal ground (211) arranged in close contact with the first dielectric substrate (410), a second dielectric substrate (510) arranged in close contact with the second layer of metal ground (211), and a third layer of metal patches arranged in close contact with the second dielectric substrate (510); the first dielectric substrate (410) and the second dielectric substrate (510) are provided with a first metallized via hole (611), a second metallized via hole (612), a third metallized via hole (613) and a fourth metallized via hole (614); the first layer of metal patches (110) comprises a first sensing horizontal arm (111) and a second sensing horizontal arm (112), wherein the first sensing horizontal arm (111) and the second sensing horizontal arm (112) are arranged in parallel and spaced apart, and a subwavelength slit is formed between the first sensing horizontal arm (111) and the second sensing horizontal arm (112) to form a near-field sensing subwavelength aperture; the third layer of metal patches comprises a microstrip feed line (310) and a resonant structure (320), and the third layer of metal patches is a symmetrical structure; the resonant structure (320) is a ring structure, the resonant structure (320) comprises a V-shaped coupling structure (321) and a metal strip line (322) integrally connected with the V-shaped coupling structure (321), the V-shaped coupling structure (321) is matched with a V-shaped feed line (312); the V-shaped coupling structure (321), the metal strip line (322), the first metallized via hole (611), the third metallized via hole (613) and the first sensing horizontal arm (111) form a metal ring magnetic resonant structure (710).

2. A magnetic-resonance near-field super-resolution sensing cell with high- order harmonic rejection as claimed in claim 1, characterized in that, The microstrip feed line (310) is a Y-shaped structure, and the microstrip feed line (310) comprises a straight feed line (311) and a V-shaped feed line (312) integrally connected with the straight feed line (311).

3. A magnetic-resonance near-field super-resolution sensing cell with high- order harmonic rejection as claimed in claim 1, characterized in that, The third layer of metal patches comprises a plurality of microstrip feed lines (310) and resonant structures (320), and the plurality of microstrip feed lines (310) and resonant structures (320) are arranged in an interlaced and symmetrical manner.

4. A magnetic-resonance near-field super-resolution sensing cell with high- order harmonic rejection as claimed in claim 1, characterized in that, The second layer of metal ground (211) is provided with a rectangular air window (212), and the first metallized via hole (611), the second metallized via hole (612), the third metallized via hole (613) and the fourth metallized via hole (613) all pass through the rectangular air window (212).

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