一种非均匀加热模拟热源及其制备方法
By designing a non-uniform heating simulation heat source and employing a copper thin film resistive layer and magnetron sputtering technology, accurate simulation of local high heat flux density and overall low heat flux density of the chip was achieved. This overcomes the limitations of traditional heating methods, reduces testing costs and cycles, and provides the thermal boundary conditions of a real chip.
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Patents(China)
- Current Assignee / Owner
- XI AN JIAOTONG UNIV
- Filing Date
- 2023-03-20
- Publication Date
- 2026-07-17
AI Technical Summary
Existing heating methods cannot effectively simulate the local high heat flux density of chips. Traditional simulated heat sources can only achieve uniform heating, which cannot meet the requirements for simulating local hot spots with high heat flux density. Furthermore, real chip testing is costly and time-consuming.
A non-uniform heating simulation heat source is designed, which divides the region into a high heat flux density region and a low heat flux density region by a metal thin film resistive layer, and uses different electrode groups and power supply pin components to achieve non-uniform heating, simulating the local high heat flux density and overall low heat flux density of the chip. It is fabricated using copper thin film material and magnetron sputtering process.
It achieves accurate simulation of local high heat flux density and overall low heat flux density of chips, reduces testing costs and cycle time, improves testing efficiency, and has non-uniform heating characteristics, which can provide the complete thermal boundary conditions of real chips.
Smart Images
Figure CN116321544B_ABST