Bifacial heterojunction solar cell and method of manufacturing the same
By employing a double-layer intrinsic amorphous silicon layer on the front side in bifacial heterojunction solar cells, and optimizing the deposition process and hydrogen treatment, the problem of deteriorated passivation effect caused by the thinning of the intrinsic amorphous silicon layer on the front side was solved, thereby improving the short-circuit current and efficiency of the cell.
CN116344654BActive Publication Date: 2026-07-24嘉兴阿特斯阳光能源科技有限公司
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Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Patents(China)
- Current Assignee / Owner
- 嘉兴阿特斯阳光能源科技有限公司
- Filing Date
- 2021-12-22
- Publication Date
- 2026-07-24
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Abstract
The application provides a bifacial heterojunction solar cell and a preparation method thereof. The bifacial heterojunction solar cell comprises a silicon base, an intrinsic amorphous silicon layer and a doped amorphous silicon layer which are sequentially arranged on a main light-receiving side of the silicon base. The intrinsic amorphous silicon layer comprises an intrinsic transition layer and an intrinsic passivation layer which is arranged on a side of the intrinsic transition layer away from the silicon base. The thickness of the intrinsic amorphous silicon layer is between 3.5 nm and 5.5 nm. The intrinsic passivation layer in the application has a better passivation effect than the intrinsic transition layer. The two layers can reduce the thickness of the entire intrinsic amorphous silicon layer while ensuring the passivation effect, effectively reduce the light absorption of the layer, increase the light reaching the silicon base, and improve the short-circuit current of the cell.
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