Infrared detector and method of manufacturing the same

Abstract

The application discloses an infrared detector. The absorption layer of the infrared detector is a superlattice structure in which N-type InAs layers and N-type InAsSb layers are alternately stacked, or a superlattice structure in which N-type InGaAs layers and N-type InAsSb layers are alternately stacked, and the potential barrier layer of the infrared detector is a superlattice structure in which N-type InAsP layers and N-type InGaSb layers are alternately stacked. The valence band of the InAsP / InGaSb superlattice potential barrier layer is flush with the valence band of the In(Ga)As / InAsSb superlattice absorption region, forms an electron potential barrier, helps to reduce the dark current of the device, and meanwhile, the barrier layer does not contain Al, avoids the oxidation of the Al-containing material, and reduces the difficulty of material growth and processing.

Description

Technical Field

[0001] This invention belongs to the field of optoelectronics and semiconductor technology, specifically, it relates to an infrared detector and its manufacturing method. Background Technology

[0002] Infrared radiation detection is a crucial component of infrared technology, widely applied in fields such as thermal imaging, satellite remote sensing, gas monitoring, optical communication, and spectral analysis. Antimony-based type-II superlattice infrared detectors, due to their excellent uniformity, low Auger recombination rate, and wide wavelength adjustment range, are considered one of the most ideal choices for fabricating third-generation infrared detectors and are currently in mass production.

[0003] Antimonide superlattices are mainly divided into two types: InAs / GaSb superlattices and InAs / InAsSb superlattices. InAs / InAsSb superlattices have advantages over InAs / GaSb superlattices, particularly in the mid-wave detection band (3–5 micrometers), due to their longer minority carrier lifetime, lower dark current, and simpler growth. However, InAs / InAsSb superlattices require an electronic barrier layer to achieve high performance. An ideal electronic barrier refers to a barrier that prevents electron transport at the interface between two materials while allowing unimpeded hole transport. This requires the barrier bandwidth to be larger than the absorption region, and the valence band of the barrier to be flush with the absorption region. In existing technologies, the electronic barriers for InAs / InAsSb superlattices are all made of AlSb-containing materials, such as AlAsSb, AlGaAsSb, or AlAsSb / GaSb superlattices. However, Al-containing materials are easily oxidized, which increases the difficulty of growing and fabricating infrared detectors and affects device stability. Moreover, materials containing AlSb are difficult to prepare using metal-organic chemical vapor deposition (MOCVD), the mainstream material growth method in industry. They can only be prepared using molecular beam epitaxy (MBE), which is costly and limits their large-scale application and promotion. Summary of the Invention

[0004] To address the aforementioned technical problems in the existing technology, this invention provides an infrared detector based on an InAs / InAsSb superlattice, but without AlSb in the barrier layer, and its fabrication method.

[0005] An infrared detector according to one aspect of an embodiment of the present invention is provided, wherein the absorption layer of the infrared detector is a superlattice structure of alternating N-type InAs layers and N-type InAsSb layers or an alternating superlattice structure of alternating N-type InGaAs layers and N-type InAsSb layers, and the barrier layer of the infrared detector is a superlattice structure of alternating N-type InAsP layers and N-type InGaSb layers.

[0006] In one example of the infrared detector provided above, the bandwidth of the barrier layer is greater than the bandwidth of the absorption layer, and the valence band of the barrier layer is flush with the valence band of the absorption layer.

[0007] In one example of the infrared detector provided above, the infrared detector further includes a substrate, a first contact layer, a second contact layer, a first electrode, and a second electrode; wherein the first contact layer, the absorption layer, the barrier layer, and the second contact layer are sequentially stacked on the substrate in a direction away from the substrate, the first electrode is in contact with the first contact layer, and the second electrode is disposed on the second contact layer.

[0008] In one example of the infrared detector provided above, portions of the absorption layer, the barrier layer, and the second contact layer are etched away to form a mesa structure exposing the first contact layer, and the first electrode is disposed on the exposed first contact layer.

[0009] In one example of the infrared detector provided above, the substrate is an N-type InAs substrate or an N-type GaSb substrate, and / or the first contact layer is an N-type InAs material or an N-type InAsSb material, and / or the second contact layer is a superlattice structure of alternating P-type InAsP layers and P-type InGaSb layers or an N-type InAs layer and N-type InAsSb layer.

[0010] A method for manufacturing an infrared detector according to another aspect of an embodiment of the present invention includes:

[0011] Alternating layers of N-type InAs and N-type InAsSb or alternating layers of N-type InGaAs and N-type InAsSb are used to form a superlattice structure to complete the fabrication of the absorption layer of the infrared detector.

[0012] Alternating N-type InAsP layers and N-type InGaSb layers are stacked to form a superlattice structure to complete the fabrication of the barrier layer of the infrared detector.

[0013] In one example of the method for fabricating an infrared detector provided in the other aspect above, the bandwidth of the barrier layer is greater than the bandwidth of the absorption layer, and the valence band of the barrier layer is flush with the valence band of the absorption layer.

[0014] In one example of the method for fabricating an infrared detector provided in the other aspect above, the method further includes, before fabricating the absorption layer, forming a first contact layer on a substrate;

[0015] The absorption layer is formed on the first contact layer, and the barrier layer is formed on the absorption layer;

[0016] After fabricating the barrier layer, the fabrication method further includes forming a second contact layer on the barrier layer, forming a first electrode that contacts the first contact layer, and forming a second electrode on the second contact layer.

[0017] In one example of the method for fabricating an infrared detector provided in the other aspect above, forming a first electrode in contact with the first contact layer specifically includes: partially etching the second contact layer, the barrier layer, and the absorption layer to form a mesa structure exposing the first contact layer; and forming a first electrode on the exposed first contact layer.

[0018] In one example of the method for fabricating an infrared detector provided in the other aspect above, the substrate is an N-type InAs substrate or an N-type GaSb substrate, and / or the first contact layer is an N-type InAs material or an N-type InAsSb material, and / or the second contact layer is a superlattice structure of alternating P-type InAsP layers and P-type InGaSb layers or a superlattice structure of alternating N-type InAs layers and N-type InAsSb layers.

[0019] Beneficial effects: The infrared detector of this invention is completely free of Al, avoiding the oxidation of Al-containing materials, reducing the difficulty of material growth and processing, and improving device stability and reliability. Furthermore, this device can be fabricated using MOCVD, a mainstream material growth method in industry, which significantly reduces costs and improves yield compared to MBE, a conventional fabrication method for antimony detectors. Attached Figure Description

[0020] The above and other aspects, features, and advantages of embodiments of the present invention will become clearer from the following description taken in conjunction with the accompanying drawings, in which:

[0021] Figure 1 This is a schematic diagram of the structure of an infrared detector according to an embodiment of the present invention;

[0022] Figure 2 This is a schematic diagram of the energy band of an infrared detector according to an embodiment of the present invention;

[0023] Figure 3 The conduction band E of the InAsP / InGaSb superlattice barrier layer and the InGaAs / InAsSb superlattice absorption layer of the infrared detector according to an embodiment of the present invention is respectively... C Price band E V Relative position comparison diagram;

[0024] Figures 4a to 4d This is a flowchart of a method for manufacturing an infrared detector according to an embodiment of the present invention. Detailed Implementation

[0025] Hereinafter, specific embodiments of the present invention will be described in detail with reference to the accompanying drawings. However, the present invention can be implemented in many different forms, and should not be construed as limited to the specific embodiments set forth herein. Rather, these embodiments are provided to explain the principles of the invention and its practical application, thereby enabling others skilled in the art to understand the various embodiments of the invention and various modifications suitable for particular intended applications.

[0026] As used herein, the term "comprising" and its variations are open terms meaning "including but not limited to". The terms "based on", "according to", etc., mean "at least partially based on" or "at least partially based on". The terms "embodiment", "an example", "one embodiment", and "an embodiment" mean "at least one embodiment". The terms "another embodiment", "another embodiment", "another example", "yet another example" mean "at least one other embodiment". The terms "first", "second", etc., may refer to different or the same objects. Other definitions, whether explicit or implicit, may be included below. Unless explicitly indicated by the context, the definition of a term remains consistent throughout the specification.

[0027] It should also be noted that, in order to avoid obscuring the invention with unnecessary details, only the structures and / or processing steps closely related to the solution according to the invention are shown in the accompanying drawings, while other details that are not closely related are omitted. Furthermore, for ease of explanation, the superlattice structure in which layers A (representing one material) and B (representing another material) are alternately stacked is referred to as an A / B superlattice; that is, "A / B superlattice" and "superlattice structure in which layers A and B are alternately stacked" are the same concept.

[0028] As described in the background section, existing infrared detectors based on In(Ga)As / InAsSb superlattices all employ AlSb-containing materials such as AlAsSb, AlGaAsSb, or AlAsSb / GaSb superlattices. Since Al-containing materials are highly susceptible to oxidation, this increases the difficulty of growing and fabricating infrared detectors, affecting device stability. Furthermore, AlSb-containing materials are difficult to fabricate using MOCVD, the mainstream material growth method in industry; they can only be fabricated using MBE. However, MBE is costly and has low yield, limiting its large-scale application and promotion.

[0029] Therefore, to solve the above problems, an infrared detector and its fabrication method are provided according to embodiments of the present invention. In this infrared detector, an Al-free InAsP / InGaSb superlattice (i.e., a superlattice structure with alternating InAsP and InGaSb layers) is used as the electron barrier layer, and an InAs / InAsSb superlattice (i.e., a superlattice structure with alternating InAs and InAsSb layers) or an InGaAs / InAsSb superlattice (i.e., a superlattice structure with alternating InGaAs and InAsSb layers) is used as the absorption layer. The core idea of ​​this invention is to form a stress-balanced superlattice structure by combining InGaSb with compressive stress and InAsP with tensile stress, and to use this superlattice structure as the barrier layer. Since the valence band of the superlattice barrier layer is jointly determined by InAsP and InGaSb, it can satisfy the condition that the valence band is aligned with the valence band of the In(Ga)As / InAsSb superlattice absorption layer, and the effective bandwidth is greater than that of the In(Ga)As / InAsSb superlattice. Therefore, embodiments of the present invention provide an Al-free In(Ga)As / InAsSb antimonide superlattice infrared detector, which can reduce the difficulty of growing and fabricating the infrared detector without affecting the stability of the device.

[0030] The infrared detector according to an embodiment of the present invention will be described in detail below with reference to the accompanying drawings.

[0031] Figure 1 This is a schematic diagram of the structure of an infrared detector according to an embodiment of the present invention.

[0032] See Figure 1 As shown, an infrared detector provided according to an embodiment of the present invention includes: a substrate 10; a first contact layer 11, an absorption layer 12, a barrier layer 13, and a second contact layer 14 stacked on the substrate 10 from bottom to top (i.e., stacked sequentially in a direction away from the substrate); and a first electrode 15 and a second electrode 16; wherein the first electrode 15 is disposed on the first contact layer 11, and the second electrode 16 is disposed on the second contact layer 14.

[0033] In one example, the substrate 10 can be an N-type InAs substrate or an N-type GaSb substrate.

[0034] In one example, the first contact layer 11 can be an N-type InAs or N-type InAsSb material, the thickness of the first contact layer 11 can be 0.2 μm to 0.5 μm, the doping source can be Si or Te, and the doping concentration can be 1 × 10⁻⁶. 18 cm -3 ~1×10 19 cm -3 .

[0035] In one example, the absorber layer 12 can be a superlattice structure with alternating N-type InAs and N-type InAsSb layers or an alternating N-type InGaAs and N-type InAsSb layers. The thickness of the absorber layer 12 can be 2 μm to 5 μm, and the doping source can be Si or Te, with a doping concentration of 1 × 10⁻⁶. 15 cm -3 ~1×10 17 cm -3 The corresponding bandwidth can be 0.2eV to 0.5eV.

[0036] In one example, the barrier layer 13 can be a superlattice structure with alternating N-type InAsP layers and N-type InGaSb layers. The thickness of the barrier layer 13 can be 0.1 μm to 0.5 μm, and the doping source can be Si or Te, with a doping concentration of 1 × 10⁻⁶. 15 cm -3 ~1×10 17 cm -3 The corresponding bandwidth can be 0.6eV to 0.9eV.

[0037] In one example, the second contact layer 14 can be a superlattice structure consisting of alternating layers of P-type InAsP layers and P-type InGaSb layers, or an alternating layer of N-type InAs layers and N-type InAsSb layers. The thickness of the second contact layer 14 can be 0.2 μm to 0.5 μm, and the doping source can be Zn, Be, Si, or Te, with a doping concentration of 1 × 10⁻⁶. 18 cm -3 ~1×10 19 cm -3 The corresponding bandwidth can be 0.2eV to 0.9eV.

[0038] The energy band of the infrared detector according to an embodiment of the present invention will be described in detail below. Figure 2 This is a schematic diagram of the energy band of an infrared detector according to an embodiment of the present invention.

[0039] Refer to together Figure 1 and Figure 2 The bandwidth of the barrier layer 13 is greater than the bandwidth of the absorption layer 12, and the valence band E of the barrier layer 13 is... V With the valence band E of absorption layer 12 VThe layers are aligned, forming an electron barrier. When the device is operating, the hot electrons generated in the absorption layer 12 are blocked by the barrier layer 13, effectively suppressing the device's dark current. Simultaneously, for electron-hole pairs generated after the absorption of light signals in the absorption layer 12, electrons are collected by the first contact layer 11, while holes are collected by the second contact layer 14 after crossing the barrier layer 13. In other words, the heterostructure containing the electron barrier can suppress the detector's dark current and noise while ensuring normal absorption of photocurrent, thereby improving the detection performance of the infrared detector.

[0040] Existing infrared detectors based on In(Ga)As / InAsSb superlattices all use AlSb-containing materials as the barrier layer. However, in the infrared detector according to an embodiment of the present invention, an InAsP / InGaSb superlattice is used as the electronic barrier for the InGaAs / InAsSb superlattice. Its band arrangement and physical principles are as follows: Figure 3 As shown. Figure 3 The conduction band E of the InAsP / InGaSb superlattice barrier layer and the InGaAs / InAsSb superlattice absorption layer of the infrared detector according to an embodiment of the present invention is respectively... C Price band E V The relative position comparison diagram.

[0041] Reference Figure 3 InAsP has a smaller lattice parameter than the substrate InAs or GaSb, exhibiting tensile stress. To balance this stress, InGaSb is used, whose lattice parameter is larger than that of InAs or GaSb. Thus, by selecting appropriate thickness and composition, a stress-balanced superlattice can be constructed. Simultaneously, considering the relative band positions of InAsP, InGaSb, InAsSb, and InGaAs monolayer materials, the valence band E after the InAsP / InGaSb superlattice forms a microstrip is... V With E which can be combined with InGaAs / InAsSb superlattice V Aligned, and the conduction band E C E higher than InGaAs / InAsSb superlattice C Thus, the InAsP / InGaSb superlattice can serve as an electronic barrier for the InGaAs / InAsSb superlattice. Through flexible combinations of superlattice composition and thickness, the absorption wavelength can be flexibly adjusted between 2.5 micrometers and 6 micrometers, completely covering the mid-infrared range.

[0042] The manufacturing process of the infrared detector according to an embodiment of the present invention will be described in detail below. Figures 4a to 4d This is a process diagram of a method for manufacturing an infrared detector according to an embodiment of the present invention.

[0043] Reference Figure 4aA substrate 10 is provided. In one example, the substrate 10 may be an N-type InAs substrate or an N-type GaSb substrate.

[0044] Reference Figure 4b A first contact layer 11, an absorption layer 12, a barrier layer 13, and a second contact layer 14 are sequentially grown from bottom to top on the substrate 10.

[0045] In one example, a first contact layer 11, an absorber layer 12, a barrier layer 13, and a second contact layer 14 are sequentially grown on the substrate 10 from bottom to top using a metal-organic chemical vapor deposition (MOCVD) process. Specifically, MOCVD is used as the growth process, with growth sources including TMIn, TMGa, TMSb, AsH3, and PH3, an n-type dopant source of SiH4, and a p-type dopant source of DEZn. The growth temperature is set to approximately 600°C, and the reaction chamber pressure is set to 200 Torr. After removing impurities from the surface of the substrate 10 in step S1 through high-temperature treatment, the following layers are sequentially grown on the substrate 10 from bottom to top:

[0046] (1) First contact layer 11. In one example, the first contact layer 11 is an N-type InAs material with a thickness of 0.2 μm, doped with Si, and the doping concentration is 1 × 10⁻⁶. 18 cm -3 .

[0047] (2) Absorber layer 12. In one example, absorber layer 12 is a superlattice structure with alternating N-type InGaAs and N-type InAsSb layers, with a thickness of 2 μm, and is Si-doped with a doping concentration of 5 × 10⁻⁶. 15 cm -3 The corresponding bandwidth is 0.25eV.

[0048] (3) Barrier layer 13. In one example, barrier layer 13 is a superlattice structure with alternating N-type InAsP layers and N-type InGaSb layers, with a thickness of 0.1 μm, doped with Si at a doping concentration of 2 × 10⁻⁶. 15 cm -3 The corresponding bandwidth is 0.7eV.

[0049] (4) Second contact layer 14. In one example, the second contact layer 14 is a superlattice structure with alternating layers of P-type InAsP and P-type InGaSb, with a thickness of 0.2 μm, and is Zn-doped with a doping concentration of 1 × 10⁻⁶. 18 cm, corresponding to a bandwidth of 0.7eV.

[0050] Here, MOCVD technology was used to grow the first contact layer 11, absorption layer 12, barrier layer 13, and second contact layer 14, resulting in an infrared detector with a cutoff wavelength of approximately 5 μm. Because MOCVD technology offers high throughput and low cost, its use can reduce costs and improve the cost-effectiveness of the infrared detector.

[0051] In another example, molecular beam epitaxy (MBE) is used as the growth process, with solid elemental sources Ga, In, As, P, and Sb as the growth sources, and Te as the n-type dopant source. The growth temperature is approximately 400°C. After degassing and cleaning of substrate 10, the following growth processes are performed sequentially on substrate 10 from bottom to top:

[0052] (1) First contact layer 11. In one example, the first contact layer 11 is an N-type InAsSb material with a thickness of 0.5 μm, doped with Te, and the doping concentration is 1 × 10⁻⁶. 19 cm -3 .

[0053] (2) Absorbing layer 12. In one example, the absorbing layer 12 is a superlattice structure with alternating N-type InAs layers and N-type InAsSb layers, with a thickness of 5 μm, and is doped with Te at a concentration of 1 × 10⁻⁶. 17 cm -3 The corresponding bandwidth is 0.4eV.

[0054] (3) Barrier layer 13. In one example, barrier layer 13 is a superlattice structure consisting of alternating N-type InAsP and N-type InGaSb layers, with a thickness of 0.5 μm, and is doped with Te at a concentration of 5 × 10⁻⁶. 16 cm -3 The corresponding bandwidth is 0.9eV.

[0055] (4) Second contact layer 14. In one example, the second contact layer 14 is a superlattice structure with alternating N-type InAs layers and N-type InAsSb layers, with a thickness of 0.5 μm, and is doped with Te at a doping concentration of 1 × 10⁻⁶. 19 cm -3 The corresponding bandwidth is 0.4eV.

[0056] When using the MBE process as the growth process, the cutoff wavelength of the obtained infrared detector is approximately 3.1 μm. Because the MBE process can form a steep interface, the short-wave infrared detector obtained using this process has high performance.

[0057] Reference Figure 4c The second contact layer 14, the barrier layer 13, and the absorption layer 12 are partially etched to form a mesa structure A that exposes the first contact layer 11.

[0058] In one example, an inductively coupled plasma etching (ICP) process is used to partially etch the second contact layer 14, the barrier layer 13, and the absorption layer 12 to expose the first contact layer 11, thereby forming a mesa structure A.

[0059] In another example, a wet etching process is used to partially etch the second contact layer 14, the barrier layer 13, and the absorption layer 12 to expose the first contact layer 11, thereby forming a mesa structure A.

[0060] Reference Figure 4d A first electrode 15 is deposited on the first contact layer 11, and a second electrode 16 is deposited on the second contact layer 14.

[0061] In one example, the first electrode 15 is deposited on the exposed first contact layer 11 using an electron beam evaporation process, and the second electrode 16 is deposited on the second contact layer 14. Both the first electrode 15 and the second electrode 16 are... combination.

[0062] In another example, the first electrode 15 is deposited on the exposed first contact layer 11 using an electron beam evaporation process, and the second electrode 16 is deposited on the second contact layer 14. Both the first electrode 15 and the second electrode 16 are... combination.

[0063] In summary, the infrared detector and its fabrication method according to embodiments of the present invention employ an In(Ga)As / InAsSb superlattice absorption region, but the barrier layer is completely free of Al, thus avoiding the oxidation of Al-containing materials, reducing the difficulty of material growth and processing, and can be fabricated using the mainstream industrial material growth method MOCVD. Compared with the conventional fabrication method MBE for antimonide detectors, this method can significantly reduce costs and improve yield.

[0064] The terms “exemplary,” “example,” etc., used throughout this specification mean “serving as an example, instance, or illustration” and do not imply “preferred” or “advantageous” than other embodiments. Detailed descriptions are included for the purpose of providing an understanding of the described techniques. However, these techniques can be practiced without these detailed descriptions. In some instances, well-known structures and apparatuses are shown in block diagram form to avoid obscuring the concepts of the described embodiments.

[0065] The optional embodiments of the present invention have been described in detail above with reference to the accompanying drawings. However, the embodiments of the present invention are not limited to the specific details in the above embodiments. Within the scope of the technical concept of the embodiments of the present invention, various simple modifications can be made to the technical solutions of the embodiments of the present invention, and these simple modifications all fall within the protection scope of the embodiments of the present invention.

[0066] The foregoing description of this specification is provided to enable any person skilled in the art to implement or use the content of this specification. Various modifications to the content of this specification will be apparent to those skilled in the art, and the general principles defined herein can be applied to other variations without departing from the scope of protection of this specification. Therefore, this specification is not limited to the examples and designs described herein, but is consistent with the widest scope of the principles and novel features disclosed herein.

Claims

1. An infrared detector, characterized in that, The absorption layer (12) of the infrared detector is a superlattice structure with alternating N-type InAs layers and N-type InAsSb layers or an alternating superlattice structure with alternating N-type InGaAs layers and N-type InAsSb layers, and the barrier layer (13) of the infrared detector is a superlattice structure with alternating N-type InAsP layers and N-type InGaSb layers. The bandwidth of the barrier layer (13) is greater than that of the absorption layer (12), and the valence band of the barrier layer (13) is flush with the valence band of the absorption layer (12).

2. The infrared detector according to claim 1, characterized in that, The infrared detector further includes a substrate (10), a first contact layer (11), a second contact layer (14), a first electrode (15), and a second electrode (16); wherein the first contact layer (11), the absorption layer (12), the barrier layer (13), and the second contact layer (14) are sequentially stacked on the substrate (10) in a direction away from the substrate (10), the first electrode (15) is in contact with the first contact layer (11), and the second electrode (16) is disposed on the second contact layer (14).

3. The infrared detector according to claim 2, characterized in that, The absorption layer (12), the barrier layer (13) and the second contact layer (14) are partially etched away to form a mesa structure (A) exposing the first contact layer (11), and the first electrode (15) is disposed on the exposed first contact layer (11).

4. The infrared detector according to claim 2, characterized in that, The substrate (10) is an N-type InAs substrate or an N-type GaSb substrate, and / or the first contact layer (11) is an N-type InAs material or an N-type InAsSb material, and / or the second contact layer (14) is a superlattice structure with alternating layers of P-type InAsP layers and P-type InGaSb layers or an superlattice structure with alternating layers of N-type InAs layers and N-type InAsSb layers.

5. A method for manufacturing an infrared detector, characterized in that, include: Alternating N-type InAs layers and N-type InAsSb layers or alternating N-type InGaAs layers and N-type InAsSb layers are used to form a superlattice structure to complete the fabrication of the absorption layer (12) of the infrared detector. Alternating N-type InAsP layers and N-type InGaSb layers are stacked to form a superlattice structure to complete the fabrication of the barrier layer (13) of the infrared detector; The bandwidth of the barrier layer (13) is greater than that of the absorption layer (12), and the valence band of the barrier layer (13) is flush with the valence band of the absorption layer (12).

6. The method for manufacturing an infrared detector according to claim 5, characterized in that, Before fabricating the absorption layer (12), the fabrication method further includes forming a first contact layer (11) on the substrate (10). The absorption layer (12) is formed on the first contact layer (11), and the barrier layer (13) is formed on the absorption layer (12). After fabricating the barrier layer (13), the fabrication method further includes forming a second contact layer (14) on the barrier layer (13), forming a first electrode (15) in contact with the first contact layer (11), and forming a second electrode (16) on the second contact layer (14).

7. The method for manufacturing an infrared detector according to claim 6, characterized in that, The first electrode (15) that forms contact with the first contact layer (11) specifically includes: The second contact layer (14), the barrier layer (13) and the absorption layer (12) are partially etched to form a mesa structure (A) that exposes the first contact layer (11). A first electrode (15) is formed on the exposed first contact layer (11).

8. The method for manufacturing an infrared detector according to claim 6, characterized in that, The substrate (10) is an N-type InAs substrate or an N-type GaSb substrate, and / or the first contact layer (11) is an N-type InAs material or an N-type InAsSb material, and / or the second contact layer (14) is a superlattice structure with alternating layers of P-type InAsP layers and P-type InGaSb layers or an superlattice structure with alternating layers of N-type InAs layers and N-type InAsSb layers.

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