Sensing device

Abstract

A sensing device (300) includes: a sensing structure (300A) having a first resonant frequency; and a pickup structure (300B) configured to communicate with external sound through a sound inlet (370). An acoustic cavity (360) is formed between the pickup structure (300B) and the sensing structure (300A). When the pickup structure (300B) vibrates in response to air-conducted sound (340) transmitted through the sound inlet (370), the vibration causes a change in sound pressure within the acoustic cavity (360), and the sensing structure (300A) converts the air-conducted sound (340) into an electrical signal based on the change in sound pressure within the acoustic cavity (360). The pickup structure (300B) provides a second resonant frequency for the sensing device (300), and the difference between the second resonant frequency and the first resonant frequency is in the range of 1000Hz–10000Hz.

Description

[0001] Cross-referencing

[0002] This application claims priority to Chinese application No. 202110445739.3, filed on April 23, 2021, the entire contents of which are incorporated herein by reference. Technical Field

[0003] This manual relates to the field of acoustic technology, and in particular to sensing devices. Background Technology

[0004] A sensing device (e.g., a microphone) receives external vibration signals. Near the resonant frequency of the sensing device, the vibration signal produces a large amplitude due to resonance. However, at the non-resonant frequency of the sensing device, the amplitude of the vibration signal is relatively small, thus limiting the sensing device's sensitivity to a narrow frequency range. Therefore, it is desirable to provide a sensing device with high sensitivity over a wider frequency range. Summary of the Invention

[0005] This specification provides an embodiment of a sensing device comprising: a sensing structure having a first resonant frequency; and a pickup structure configured to communicate with external sound through a sound inlet, wherein an acoustic cavity is formed between the pickup structure and the sensing structure. When the pickup structure vibrates in response to air-conducted sound transmitted through the sound inlet, the vibration causes a change in sound pressure within the acoustic cavity. The sensing structure converts the air-conducted sound into an electrical signal based on the change in sound pressure within the acoustic cavity. The pickup structure provides a second resonant frequency to the sensing device, the difference between the second resonant frequency and the first resonant frequency being in the range of 1000–10000 Hz.

[0006] In some embodiments, the pickup structure comprises a liquid or a gel; and the liquid or the gel, together with a gas within the acoustic cavity, forms a resonant system having the second resonant frequency.

[0007] In some embodiments, the pickup structure further includes a support member for defining the movement of the liquid or the gel.

[0008] In some embodiments, the support includes a column connected to or in contact with the sensing structure; and the column includes a straight column or a curved column.

[0009] In some embodiments, the sensing structure includes a printed circuit board; and the pickup structure includes a diaphragm connected to the printed circuit board.

[0010] In some embodiments, the pickup structure includes a diaphragm, a liquid, and a support, or includes a diaphragm, a gel, and a support; the liquid and the diaphragm together form a resonant system having the second resonant frequency, or the gel and the diaphragm together form a resonant system having the second resonant frequency; and the diaphragm and the support are used to define the movement of the liquid or gel.

[0011] In some embodiments, the pickup structure includes a diaphragm and a liquid or includes a diaphragm and a gel; and the liquid and the diaphragm together form a resonant system having the second resonant frequency or the gel and the diaphragm together form a resonant system having the second resonant frequency.

[0012] In some embodiments, the pickup structure includes a diaphragm, a liquid, a support, and a mass; or includes a diaphragm, a gel, a support, and a mass; the liquid, the diaphragm, and the mass together form a resonant system having the second resonant frequency, or the gel, the diaphragm, and the mass together form a resonant system having the second resonant frequency; and the diaphragm and the support are used to define the movement of the liquid or gel; and the mass is placed in the liquid or gel.

[0013] In some embodiments, the pickup structure includes a diaphragm, a support member, and a mass block; the diaphragm and the mass block together form a resonant system having the second resonant frequency; and the support member is used to support the diaphragm and the mass block.

[0014] In some embodiments, the modulus of the diaphragm is 100MPa-300GPa.

[0015] In some embodiments, the modulus of the diaphragm is 5 GPa-50 GPa.

[0016] In some embodiments, the sensing structure includes a second diaphragm; and the modulus of the diaphragm is 1 / 100 to 1 / 10 of the modulus of the second diaphragm.

[0017] In some embodiments, the diaphragm is circular; and the radius of the diaphragm is 500um-3mm.

[0018] In some embodiments, the density of the liquid is 0 g / cm3-3 g / cm3.

[0019] In some embodiments, the viscosity of the liquid is 1 cst-3000 cst.

[0020] In some embodiments, the second resonant frequency is lower than the first resonant frequency.

[0021] In some embodiments, the second resonant frequency is 2000Hz-10000Hz.

[0022] Additional features will be set forth in part in the description which follows, and will become apparent to those skilled in the art upon consulting the following description and the accompanying drawings, or may be learned by the generation or operation of examples. The features of this specification can be realized and obtained by practice or by using various aspects of the methods, tools, and combinations illustrated in the following detailed examples. Attached Figure Description

[0023] This specification will be further described by way of exemplary embodiments, which will be described in detail with reference to the accompanying drawings. These embodiments are not limiting; in these embodiments, the same reference numerals denote the same structures, wherein:

[0024] Figure 1 This is a schematic diagram of the structure of a condenser air conduction microphone according to some embodiments of this specification;

[0025] Figure 2 This is a schematic diagram of the structure of a piezoelectric air conduction microphone according to some embodiments of this specification;

[0026] Figure 3 This is a schematic diagram of the structure of an exemplary sensing device according to some embodiments of this specification;

[0027] Figure 4 This is a schematic diagram of the structure of an exemplary sensing device according to some embodiments of this specification;

[0028] Figure 5 This is a schematic diagram of the structure of an exemplary sensing device according to some embodiments of this specification;

[0029] Figure 6 This is a schematic diagram of the structure of an exemplary sensing device according to some embodiments of this specification;

[0030] Figure 7 This is a schematic diagram of the structure of an exemplary sensing device according to some embodiments of this specification;

[0031] Figure 8 This is a schematic diagram of the structure of an exemplary sensing device according to some embodiments of this specification;

[0032] Figure 9 This is a schematic diagram of the structure of an exemplary sensing device according to some embodiments of this specification;

[0033] Figure 10 This is a schematic diagram of the structure of an exemplary sensing device according to some embodiments of this specification;

[0034] Figure 11This is a schematic diagram of the structure of an exemplary sensing device according to some embodiments of this specification;

[0035] Figure 12 This is a schematic diagram of the structure of an exemplary sensing device according to some embodiments of this specification;

[0036] Figure 13 This is a schematic diagram of the structure of an exemplary sensing device according to some embodiments of this specification;

[0037] Figure 14 This is a schematic diagram of the structure of an exemplary sensing device according to some embodiments of this specification;

[0038] Figure 15 This is a schematic diagram of the structure of an exemplary sensing device according to some embodiments of this specification;

[0039] Figure 16 This is a schematic diagram of the structure of an exemplary sensing device according to some embodiments of this specification;

[0040] Figure 17 These are frequency response curves of exemplary sensing devices shown in some embodiments of this specification;

[0041] Figure 18 These are frequency response curves of exemplary sensing devices shown in some embodiments of this specification. Detailed Implementation

[0042] To more clearly illustrate the technical solutions of the embodiments in this specification, the accompanying drawings used in the description of the embodiments will be briefly introduced below. Obviously, the drawings described below are merely some examples or embodiments of this specification. For those skilled in the art, these drawings can be applied to other similar scenarios without creative effort. It should be understood that these exemplary embodiments are given merely to enable those skilled in the art to better understand and implement this specification, and are not intended to limit the scope of this specification in any way. Unless obvious from the linguistic context or otherwise, the same reference numerals in the figures represent the same structures or operations.

[0043] As indicated in this specification and claims, unless the context clearly indicates otherwise, the words "a," "an," "an," and / or "the" are not specifically singular and may include plural forms. Generally, the terms "comprising" and "including" only indicate the inclusion of expressly identified steps and elements, which do not constitute an exclusive list, and the method or apparatus may also include other steps or elements. The term "based on" means "at least partially based on." The term "one embodiment" means "at least one embodiment"; the term "another embodiment" means "at least one additional embodiment."

[0044] In the description of this specification, it should be understood that the terms "center," "longitudinal," "lateral," "length," "width," "height," "thickness," "upper," "lower," "front," "rear," "left," "right," "vertical," "horizontal," "top," "bottom," "inner," "outer," "clockwise," "counterclockwise," "axial," "radial," and "circumferential" indicate the orientation or positional relationship based on the orientation or positional relationship shown in the accompanying drawings. They are used only for the convenience of describing this specification and for simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, or be constructed and operated in a specific orientation. Therefore, they should not be construed as limitations on this specification.

[0045] Furthermore, the terms "first" and "second" are used for descriptive purposes only and should not be construed as indicating or implying relative importance or implicitly specifying the number of technical features indicated. Thus, a feature defined as "first" or "second" may explicitly or implicitly include at least one of that feature. In the description of this specification, "a plurality of" means at least two, such as two, three, etc., unless otherwise explicitly specified.

[0046] In this specification, unless otherwise expressly specified and limited, the terms "installation," "connection," "joining," and "fixing," etc., should be interpreted broadly. For example, they can refer to a fixed connection, a detachable connection, or an integral part; they can refer to a mechanical connection or an electrical connection; they can refer to a direct connection or an indirect connection through an intermediate medium; they can refer to the internal communication of two components or the interaction between two components, unless otherwise expressly limited. Those skilled in the art can understand the specific meaning of the above terms in this specification according to the specific circumstances.

[0047] In this specification, unless otherwise expressly specified and limited, "above" or "below" the second feature can mean that the first and second features are in direct contact, or that the first and second features are in indirect contact through an intermediate medium. Furthermore, "above," "over," and "on top" of the second feature can mean that the first feature is directly above or diagonally above the second feature, or simply that the first feature is at a higher horizontal level than the second feature. "Below," "below," and "under" the second feature can mean that the first feature is directly below or diagonally below the second feature, or simply that the first feature is at a lower horizontal level than the second feature.

[0048] Some embodiments of this specification provide a sensing device. The sensing device may include a sensing structure and a pickup structure. The sensing structure has a first resonant frequency. The pickup structure communicates with external sound sources (such as air-conducted sound) through a sound inlet and forms an acoustic cavity with the sensing structure. When the pickup structure vibrates in response to air-conducted sound transmitted through the sound inlet, the vibration causes a change in sound pressure within the acoustic cavity. The sensing structure can convert the air-conducted sound into an electrical signal based on the change in sound pressure within the acoustic cavity. The pickup structure can provide a second resonant frequency for the sensing device. In some embodiments, the second resonant frequency is lower than the first resonant frequency. When the difference between the second and first resonant frequencies meets certain conditions, for example, between 1000Hz and 10000Hz, the sensitivity of the sensing device with the pickup structure is improved over a wider frequency range compared to the sensing structure.

[0049] In some embodiments, the pickup structure may include a liquid, a gel, a support (such as a column), a diaphragm (such as a polymer membrane), a mass, or any combination thereof. The liquid, gel, or mass may form a resonant system (such as a spring-mass system) with the gas within the acoustic cavity, or the liquid, gel, or mass may form a resonant system (such as a spring-mass system) with the diaphragm, exhibiting the second resonant frequency. The support may be used to restrict the movement of the liquid, gel, diaphragm, or mass. In some embodiments, the magnitude of the second resonant frequency and the relationship between the first and second resonant frequencies can be changed by adjusting the parameters of the material forming the pickup structure (e.g., the viscosity of the liquid or gel, the density of the liquid or gel, the modulus of the diaphragm, the size of the diaphragm, the weight of the mass), thereby achieving, for example, improving the sensitivity and reliability of the sensing device, or making the output gain of the sensing device more stable in the desired frequency band (e.g., mid-low frequencies), or making the frequency response curve of the sensing device flatter.

[0050] In some embodiments, the sensing structure may include a substrate structure and a stacked structure. In some embodiments, the substrate structure may be a regular or irregular three-dimensional structure with a hollow interior portion, for example, a hollow frame structure, including but not limited to regular shapes such as rectangular frames, circular frames, regular polygonal frames, and any irregular shape. The stacked structure may be located above the hollow portion of the substrate structure or at least partially suspended above it. In some embodiments, at least a portion of the stacked structure is physically connected to the substrate structure. For example, the stacked structure may be a cantilever beam, which may be a plate-like structure. One end of the cantilever beam is connected to the upper or lower surface of the substrate structure or the sidewall containing the hollow portion of the substrate structure, while the other end is not connected to or in contact with the substrate structure, thus suspending the other end of the cantilever beam above the hollow portion of the substrate structure. As another example, the stacked structure may include a diaphragm layer (also called a suspended membrane structure), which is fixedly connected to the substrate structure, and the stacked structure is disposed on the upper or lower surface of the suspended membrane structure. For example, a laminated structure may include a mass element (such as a mass block) and a support arm. The mass element is fixedly connected to the base structure via the support arm, with one end of the support arm connected to the base structure and the other end connected to the mass element, such that a portion of the mass element and the support arm are suspended in the hollow portion of the base structure. It should be noted that the terms "located in the hollow portion of the base structure" or "suspended in the hollow portion of the base structure" in this specification can mean suspended inside, below, or above the hollow portion of the base structure.

[0051] In some embodiments, the laminated structure may include a vibrating unit and an acoustic transducer. Specifically, the base structure may vibrate based on an external vibration signal, and the vibrating unit deforms in response to the vibration of the base structure; the acoustic transducer generates an electrical signal based on the deformation of the vibrating unit. It should be noted that the description of the vibrating unit and acoustic transducer here is only for the purpose of conveniently illustrating the working principle of the laminated structure and does not limit the actual composition and structure of the laminated structure. In fact, the vibrating unit is not necessary, and its function can be fully realized by the acoustic transducer. For example, by making certain modifications to the structure of the acoustic transducer, the acoustic transducer can directly respond to the vibration of the base structure to generate an electrical signal. It should be noted that the base structure is not limited to a structure independent of the sensing structure's housing; in some embodiments, the base structure may also be part of the sensing structure's housing.

[0052] In some embodiments, the sensing structure can generate deformation and / or displacement based on external signals, such as mechanical signals (e.g., pressure, mechanical vibration), acoustic signals (e.g., sound waves), electrical signals, optical signals, thermal signals, etc. The deformation and / or displacement can be further converted into a target signal by the transducer of the sensing structure. The target signal can be an electrical signal, mechanical signal (e.g., mechanical vibration), acoustic signal (e.g., sound waves), electrical signal, optical signal, thermal signal, etc. In some embodiments, the sensing structure can be a microphone (e.g., an air conduction microphone or a microphone that uses bone conduction as one of the main sound propagation methods), an accelerometer, a pressure sensing structure, a hydrophone, an energy harvester, a gyroscope, etc. An air conduction microphone is a microphone that can receive sound waves conducted through the air and convert them into electrical signals. A microphone that uses bone conduction as one of the main sound propagation methods is a microphone that can at least receive solid vibrations and convert them into electrical signals. For ease of explanation, the embodiments in this specification use an air conduction microphone as an example of the sensing structure, which is not intended to limit the scope of protection of this specification.

[0053] Figure 1 This is a schematic diagram of the structure of a condenser air conduction microphone according to some embodiments of this specification. Figure 2 This is a schematic diagram of the structure of a piezoelectric air conduction microphone according to some embodiments of this specification.

[0054] In some embodiments, the sensing structure may include a capacitive microphone. Figure 1 Taking the illustrated condenser microphone 100 as an example, the condenser microphone 100 may include a transducer element 110, a processor 120, a printed circuit board (PCB) 130, a housing 150, and a sound inlet 160. In some embodiments, the transducer element 110 can convert external vibration signals (such as air-conducted sound 140) into electrical signals. Figure 1 As shown, the transducer element 110 may include a diaphragm 111 and a backplate 112. The diaphragm 111 and the backplate 112 can form a capacitor. For example, the diaphragm 111 and the backplate 112 can be placed parallel to each other and close together, forming the two poles of the capacitor respectively. When the air-conducted sound 140 causes the diaphragm 111 to vibrate through the sound inlet 160, the distance between the diaphragm 111 and the backplate 112 changes, thereby changing the capacitance of the capacitor. With the voltage remaining constant, the charge in the capacitor changes, thereby generating an electrical signal and realizing sound acquisition.

[0055] In some embodiments, the processor 120 may acquire the electrical signal from the transducer 110 and perform signal processing. In some embodiments, the signal processing may include frequency modulation processing, amplitude modulation processing, filtering processing, noise reduction processing, etc. The processor 120 may include a microcontroller, microprocessor, application-specific integrated circuit (ASIC), application-specific instruction-set processor (ASIP), central processing unit (CPU), physics processing unit (PPU), digital signal processor (DSP), field-programmable gate array (FPGA), advanced reduced instruction set computer (RISC machine, ARM), programmable logic device (PLD), or other types of processing circuits or processors.

[0056] In some embodiments, circuitry and other components of the condenser microphone 100 (such as transducer 110 and processor 120) may be disposed on the PCB 130 (e.g., by laser etching, chemical etching, etc.). In some embodiments, transducer 110 and / or processor 120 may be fixedly connected to the PCB 130 using conductive adhesive (e.g., conductive silver paste, copper powder conductive paste, nickel-carbon conductive paste, silver-copper conductive paste, etc.). The conductive adhesive may be conductive glue, conductive film, conductive ring, conductive tape, etc. In some embodiments, transducer 110 and / or processor 120 may be electrically connected to other components via circuitry disposed on the PCB 130. In some embodiments, transducer 110 and processor 120 may be directly connected via wires (e.g., gold wire, copper wire, aluminum wire, etc.).

[0057] In some embodiments, PCB 130 may be a phenolic PCB paper substrate, a composite PCB substrate, a fiberglass PCB substrate, a metal PCB substrate, a multilayer PCB substrate produced by a multilayer lamination method, etc. For example, PCB 130 may be an FR-4 grade fiberglass PCB substrate made of epoxy fiberglass cloth. In some embodiments, PCB 130 may also be a flexible printed circuit board (FPC).

[0058] In some embodiments, the housing 150 can be a regular or irregular three-dimensional structure with an internal cavity (i.e., a hollow portion). For example, it can be a hollow frame structure, including but not limited to regular shapes such as rectangular frames, circular frames, and regular polygonal frames, as well as any irregular shape. In some embodiments, the transducer element 110, processor 120, and PCB 130, as well as the circuits and other components disposed thereon, can be sealed. In some embodiments, the housing 150 can include a sound inlet, through which the transducer element 110 can communicate with external sound.

[0059] In some embodiments, the housing 150 may be made of metal (e.g., stainless steel, copper, etc.), plastic (e.g., polyethylene (PE), polypropylene (PP), polyvinyl chloride (PVC), polystyrene (PS), acrylonitrile-butadiene-styrene copolymer (ABS), composite material (e.g., metal matrix composite or non-metal matrix composite), etc. By way of example only, the material used for the housing 150 may be brass.

[0060] In some embodiments, the sensing structure may include a piezoelectric microphone, which may include the aforementioned substrate structure and the aforementioned stacked structure (such as a cantilever beam, support arm, or mass unit). Figure 2 Taking the piezoelectric microphone 200 as an example, the piezoelectric microphone 200 may include a transducer element, a processor 220, a PCB 230, a housing 250, and a sound inlet 260. The transducer element may include a diaphragm 211 and a piezoelectric element (not shown in the diagram). Figure 2 (As shown in the image). Diaphragm 211 can be coupled with a piezoelectric element (not shown in the image). Figure 2 (as shown in the diagram) connection or contact. In some embodiments, the piezoelectric element (not shown in the diagram) is connected or contacted. Figure 2 (As shown in the image) can be attached to the diaphragm 211. When the air-conducted sound 240 causes the housing 250 or the diaphragm 211 to vibrate through the sound inlet 260, it can drive the piezoelectric element (not shown in the image). Figure 2 (as shown in the image) undergoes deformation, which in turn affects the piezoelectric element (not shown in the image). Figure 2 (As shown in the diagram) The piezoelectric effect during deformation generates an electrical signal, enabling sound acquisition. In some embodiments, the piezoelectric microphone 200 differs from the condenser microphone 100 in its transducer element; other components, such as the processor, PCB, housing, and sound inlet, are the same or similar. Further descriptions of the processor 220, PCB 230, housing 250, and sound inlet 260 can be found in the descriptions of the processor 120, PCB 130, housing 150, and sound inlet 160.

[0061] It should be noted that the above description of the transducer element in a piezoelectric microphone (such as piezoelectric microphone 200) is merely an example and is not intended to limit the scope of this specification. In some embodiments, the transducer element in a piezoelectric microphone may consist only of a diaphragm, and the diaphragm is a piezoelectric thin film. Air-conducted sound causes the diaphragm to vibrate and deform through the sound inlet, and the sound is collected by the electrical signal generated by the piezoelectric effect during the diaphragm deformation.

[0062] In some embodiments, to improve the sensing structure's response to air-conducted sound, the sensing structure can be combined with one or more additional pickup structures to form a sensing device. The structure of this sensing structure can be the same as or similar to the aforementioned sensing structures (such as condenser microphone 100 and piezoelectric microphone 200).

[0063] In some embodiments, the pickup structure may be disposed between the transducer element and the sound inlet of the sensing structure. The pickup structure may be configured to communicate with external sound (such as air-conducted sound) through the sound inlet and to form an acoustic cavity with the sensing structure. When the pickup structure vibrates in response to air-conducted sound transmitted through the sound inlet, this vibration causes a change in sound pressure within the acoustic cavity. The sensing structure converts the air-conducted sound into an electrical signal based on this change in sound pressure within the acoustic cavity, thereby achieving sound acquisition.

[0064] In some embodiments, the sensing structure can provide a first resonant frequency for the sensing device, and the pickup structure can provide a second resonant frequency for the sensing device. In some embodiments, the difference between the first resonant frequency and the second resonant frequency can be in the range of 1000Hz-10000Hz. In some embodiments, the difference between the first resonant frequency and the second resonant frequency can be between 2000Hz-8000Hz. In some embodiments, the difference between the first resonant frequency and the second resonant frequency can be between 3000Hz-7000Hz. In some embodiments, the difference between the first resonant frequency and the second resonant frequency can be between 4000Hz-6000Hz. In some embodiments, the first resonant frequency is related to the properties of the sensing structure itself (such as shape, material, structure). In some embodiments, the first resonant frequency can be above 10000Hz. In some embodiments, the first resonant frequency can be above 12000Hz. In some embodiments, the first resonant frequency can be above 15000Hz.

[0065] In some embodiments, the second resonant frequency is less than the first resonant frequency. In some embodiments, the second resonant frequency may be between 2000Hz and 10000Hz. In some embodiments, the second resonant frequency may be between 2000Hz and 8000Hz. In some embodiments, the second resonant frequency may be between 3000Hz and 4000Hz. In some embodiments, the second resonant frequency may be between 3200Hz and 3800Hz. In some embodiments, the second resonant frequency may be between 3400Hz and 3600Hz. In some embodiments, the second resonant frequency may be between 2000Hz and 4000Hz. In some embodiments, the second resonant frequency may be between 4000Hz and 10000Hz. Compared to a sensing structure without a pickup structure, a sensing device with a pickup structure has improved sensitivity over a wider frequency range.

[0066] In some embodiments, the pickup structure is formed of a solid structure (such as a support, mass, diaphragm), liquid, gel, or a combination thereof connected to or in contact with the sensing structure. The liquid, gel, or mass can form a resonant system with the aforementioned second resonant frequency together with the gas within the acoustic cavity formed between the pickup structure and the sensing structure; alternatively, the liquid, gel, or mass can form a resonant system (such as a spring-mass system) with the aforementioned second resonant frequency together with the diaphragm. The support can be used to limit the movement of the liquid, gel, diaphragm, or mass. In some embodiments, the magnitude of the second resonant frequency and the relationship between the second resonant frequency and the first resonant frequency can be related to the parameters of the pickup structure and / or the parameters of the sensing structure. In some embodiments, to obtain an ideal output frequency response of the sensing device or an output frequency response that meets the requirements of practical applications, the range of parameters of the pickup structure and / or the parameters of the sensing structure can be determined by computer simulation, phantom experiments, etc. In some embodiments, the influence of each factor on the frequency response of the sensing device can be determined individually by controlling variables based on simulation.

[0067] In some embodiments, the influence of different factors on the frequency response of the sensing device is correlated, so the influence of parameter pairs or parameter groups on the frequency response of the sensing device can be determined by corresponding parameter pairs or parameter groups. For illustrative purposes only, taking the combination of mass block, diaphragm and support to form a pickup structure as an example, the relationship between the second resonant frequency and sensitivity of the sensing device and the parameters of the pickup structure and / or the parameters of the sensing structure is shown in the following formula (1):

[0068] (S,f)=g(K1, K2,V,R,h,ρ) (1)

[0069] Where S represents the sensitivity of the sensing device, f represents the second resonant frequency, K1 represents the modulus of the diaphragm (e.g., Young's modulus), K2 represents the modulus of the support (e.g., Young's modulus), V represents the volume of the acoustic cavity, R represents the radius of the mass block, h represents the height of the mass block, and ρ represents the density of the mass block.

[0070] In some embodiments, the second resonant frequency may increase with increasing modulus of the diaphragm. In some embodiments, the second resonant frequency may increase with increasing modulus of the support member. In some embodiments, the second resonant frequency may first decrease and then increase with increasing dimension (e.g., radius, area) of the mass block perpendicular to the diaphragm vibration direction. In some embodiments, the second resonant frequency may decrease with increasing height of the mass block along the diaphragm vibration direction. In some embodiments, the second resonant frequency may decrease with increasing density of the mass block.

[0071] In some embodiments, the sensitivity of the sensing device may decrease as the modulus of the diaphragm increases. In some embodiments, the sensitivity of the sensing device may decrease as the modulus of the support increases. In some embodiments, the sensitivity of the sensing device may initially increase and then decrease as the cavity volume increases. In some embodiments, the sensitivity of the sensing device may initially increase and then decrease as the radius of the mass (e.g., along the direction perpendicular to the diaphragm vibration) increases. The sensitivity of the sensing device may increase as the height of the mass (e.g., along the direction of diaphragm vibration) increases. In some embodiments, the sensitivity of the sensing device may increase as the density of the mass increases.

[0072] In some embodiments, the pickup structure may include a liquid, a gel, or a combination thereof. The liquid, gel, or combination thereof may, together with the gas within the acoustic cavity, form a resonant system (such as a spring-mass system) having the aforementioned second resonant frequency. For example, the liquid, gel, or combination thereof may be considered as the mass in the resonant system, and the gas within the acoustic cavity as the spring. In some embodiments, the pickup structure formed by the liquid, gel, or combination thereof may be substantially parallel to the diaphragm (also referred to as the second diaphragm) in the sensing structure. "Substantially parallel" as used herein means that the surface of the pickup structure (e.g., the upper surface, the lower surface) is parallel to the surface of the second diaphragm (e.g., the upper surface, the lower surface) or that the deviation between them is less than 3 degrees, 5 degrees, 8 degrees, 10 degrees, etc.

[0073] In some embodiments, the PCB in the sensing structure can be used to restrict the movement of the liquid, gel, or composition thereof. For example, the liquid, gel, or composition thereof is confined within a limited space on the PCB, thus restricting its movement to that limited space. If the viscosity of the liquid, gel, or composition thereof reaches a certain threshold, the liquid, gel, or composition thereof may adhere to the inner wall of the limited space.

[0074] To ensure that the second resonant frequency provided by the pickup structure is within the target frequency range, in some embodiments, the density of the liquid can be between 0 g / cm³ and 3 g / cm³. In some embodiments, the density of the liquid can be between 0 g / cm³ and 2 g / cm³. In some embodiments, the density of the liquid can be between 0 g / cm³ and 1 g / cm³. In some embodiments, the density of the liquid can be between 1 g / cm³ and 3 g / cm³. In some embodiments, the viscosity of the gel can be between 1 liter (cst) and 3000 liters (cst). In some embodiments, the viscosity of the gel can be between 1 cst and 1000 cst. In some embodiments, the viscosity of the gel can be between 50 cst and 900 cst. In some embodiments, the viscosity of the gel can be between 100 cst and 700 cst. In some embodiments, the viscosity of the gel can be between 200 cst and 500 cst. In some embodiments, the viscosity of the gel can be between 300 cst and 400 cst. In some embodiments, the viscosity of the gel can be between 1 cst and 500 cst. In some embodiments, the viscosity of the gel can be between 500 cst and 3000 cst.

[0075] In some embodiments, when selecting the type of liquid or gel, its safety (e.g., non-flammability and non-explosiveness) and stability (e.g., non-volatileness and non-deterioration at high temperatures) may also be considered. For example, liquids may include oils (e.g., silicone oil, glycerin, castor oil, engine oil, lubricating oil, hydraulic oil (e.g., aviation hydraulic oil)), water (including pure water, aqueous solutions of other inorganic or organic substances (e.g., brine)), oil-water emulsions, or any combination thereof. Gels may include natural hydrogels (e.g., agarose, methylcellulose, hyaluronic acid, gelatin, chitosan), synthetic hydrogels (e.g., polyacrylamide, polyvinyl alcohol, sodium polyacrylate, acrylate polymers), aerogels, or combinations thereof.

[0076] In some embodiments, the magnitude of the second resonant frequency and the relationship between the second and first resonant frequencies can be adjusted by modifying the properties of the liquid, gel, or composition thereof, or the parameters of the sensing structure. As an example only, the properties of the liquid, gel, or composition thereof may include its density, viscosity, volume, presence of bubbles, bubble volume, bubble location, number of bubbles, etc. The parameters of the sensing structure may include the internal structure, dimensions, and modulus (e.g., Young's modulus) of its housing, the mass of the sensing structure and / or the dimensions and modulus (e.g., Young's modulus) of its transducer elements, etc. In some embodiments, a higher density of the liquid, gel, or composition thereof results in a greater mass for the same volume and a lower second resonant frequency. In some embodiments, a higher viscosity of the liquid, gel, or composition thereof makes it less prone to vibrations in a specific direction (e.g., longitudinal), resulting in a higher second resonant frequency.

[0077] In some embodiments, the density or viscosity of the liquid, gel, or combination thereof can be selected according to the desired second resonant frequency. For example, if a larger frequency range (e.g., 4000Hz–10000Hz) is required for the second resonant frequency, a liquid, gel, or combination thereof with a higher viscosity (e.g., 500cst–3000cst) or a lower density (e.g., 0g / cm3–1g / cm3) can be selected; if a smaller frequency range (e.g., 2000Hz–4000Hz) is required for the second resonant frequency, a liquid, gel, or combination thereof with a lower viscosity (e.g., 1cst–500cst) or a higher density (e.g., 1g / cm3–3g / cm3) can be selected.

[0078] In some embodiments, the pickup structure may include a liquid (or gel or a combination thereof) and a support. The liquid (or gel or a combination thereof) may, together with the gas within the acoustic cavity, form a resonant system (such as a spring-mass system) having the aforementioned second resonant frequency. The support is used to limit the movement of the liquid (or gel or a combination thereof), thereby ensuring the stability of the frequency response of the sensing device. In some embodiments, the cross-section of the support may be rectangular, circular, annular, square, pentagonal, hexagonal, etc. In some embodiments, the support may include a column (such as a straight column or a curved column) connected to or in contact with the sensing structure. For example, the column may be connected to or in contact with one side of the PCB in the sensing structure. To ensure that the second resonant frequency provided by the pickup structure is within the target frequency range, in some embodiments, the height of the column may be between 0.1 mm and 50 mm. In some embodiments, the height of the column may be between 1 mm and 40 mm. In some embodiments, the height of the column may be between 5 mm and 30 mm. In some embodiments, the height of the column may be between 10 mm and 20 mm. In some embodiments, the diameter of the tube (perpendicular to the diaphragm vibration direction) may be greater than or equal to the diameter of the acoustic cavity (perpendicular to the diaphragm vibration direction). In some embodiments, the diameter of the tube is between 0.01 mm and 5 mm. In some embodiments, the diameter of the tube is between 0.1 mm and 6 mm. In some embodiments, the diameter of the tube is between 1 mm and 10 mm. In some embodiments, the diameter of the tube is between 5 mm and 20 mm.

[0079] It should be noted that the principle of generating the second resonant frequency by the pickup structure containing liquid (or gel or a combination thereof) and support is the same as or similar to that of the pickup structure containing liquid, gel or a combination thereof described above. For more related descriptions, please refer to the description of the pickup structure containing liquid, gel or a combination thereof described above, which will not be repeated here.

[0080] In some embodiments, in addition to adjusting the magnitude of the second resonant frequency by adjusting the properties of the liquid, gel, or their composition, or the parameters of the sensing structure, as described above, the magnitude of the second resonant frequency can also be adjusted by adjusting the properties of the support (such as the modulus of the support). In some embodiments, the greater the modulus of the support, the greater the second resonant frequency.

[0081] It should be noted that the resonant system with the second resonant frequency is formed by the longitudinal vibration of the diaphragm. Vibration of the diaphragm in other directions may have an adverse effect on the resonant system with the second resonant frequency (e.g., causing instability in the frequency response curve). In some embodiments, the support can be placed to the left and / or right of the liquid (or gel or a combination thereof) to suppress the vibration of the diaphragm in other directions. Furthermore, if the support is prone to vibration under the influence of external sound, it may cause the diaphragm to vibrate in other directions. To avoid this problem, the modulus of the support needs to be greater than a certain threshold. As an example only, the material of the support may include UV-curable adhesive (also known as photosensitive adhesive, shadowless adhesive), polydimethyloxane (PDMS), foam, etc., or any combination thereof.

[0082] In some embodiments, the pickup structure may include a diaphragm. The diaphragm can form a resonant system having the aforementioned second resonant frequency. In some embodiments, the diaphragm can be connected to a PCB in the sensing structure. For example, the diaphragm can be fixedly connected to the PCB by means of adhesives, clips, bolts, etc., thereby restricting the movement of the diaphragm along a specific direction (non-longitudinal, such as transverse). In some embodiments, the number of diaphragms is not limited, such as 2, 3, 4, etc.

[0083] To ensure that the second resonant frequency provided by the pickup structure is within the target frequency range, in some embodiments, the modulus of the diaphragm (e.g., Young's modulus) can be between 100 MPa and 300 GPa. In some embodiments, the modulus of the diaphragm can be between 1 GPa and 200 GPa. In some embodiments, the modulus of the diaphragm can be between 5 GPa and 50 GPa. In some embodiments, the modulus of the diaphragm can be between 1 GPa and 10 GPa. In some embodiments, the modulus of the diaphragm can be between 2 GPa and 8 GPa. In some embodiments, the modulus of the diaphragm can be between 3 GPa and 7 GPa. In some embodiments, the modulus of the diaphragm can be between 4 GPa and 6 GPa. In some embodiments, the modulus of the diaphragm can be 1 GPa. In some embodiments, the modulus of the diaphragm can be between 1 / 100 and 1 / 10 of the modulus of the second diaphragm. In some embodiments, the modulus of the diaphragm can be between 1 / 50 and 1 / 5 of the modulus of the second diaphragm. In some embodiments, the modulus of the diaphragm can be between 1 / 25 and 2 / 5 of the modulus of the second diaphragm. In some embodiments, the modulus of the diaphragm can be between 1 / 20 and 1 / 2 of the modulus of the second diaphragm. By way of example only, the diaphragm can be a polytetrafluoroethylene film, a polydimethylsiloxane film, a plastic film (such as polyethylene, polypropylene, polystyrene, polyvinyl chloride, and polyester), cellophane, paper, metal foil, or any combination thereof.

[0084] In some embodiments, the shape of the diaphragm cross-section (e.g., along the direction perpendicular to the diaphragm vibration) can be circular, triangular, quadrilateral, polygonal, etc. In some embodiments, the cross-sectional shape of the diaphragm can be adapted to the radial cross-sectional shape (e.g., along the direction perpendicular to the diaphragm vibration) of the acoustic cavity defined by the pickup structure and sensing structure. In some embodiments, the acoustic cavity can be cylindrical, and correspondingly, the shape of the diaphragm cross-section can be circular. In some embodiments, the radius of the diaphragm can be determined according to the size of the acoustic cavity. For example, the radius of the diaphragm can be the same as or close to the radius of the acoustic cavity. To ensure that the second resonant frequency provided by the pickup structure is within the target frequency range, in some embodiments, the radius of the diaphragm can be between 500 μm and 3 mm. In some embodiments, the radius of the diaphragm can be between 800 μm and 2.5 mm. In some embodiments, the radius of the diaphragm can be between 1 mm and 2 mm. In some embodiments, the radius of the diaphragm can be between 1.2 mm and 1.6 mm. In some embodiments, the thickness of the diaphragm can be between 500 nm and 100 μm. In some embodiments, the thickness of the diaphragm can be between 800 nm and 80 μm. In some embodiments, the diaphragm thickness can be between 1000 nm and 50 μm. In some embodiments, the diaphragm thickness can be between 2000 nm and 30 μm. In some embodiments, the diaphragm thickness can be between 5000 nm and 10 μm.

[0085] In some embodiments, the magnitude of the second resonant frequency can be adjusted by modifying the properties of the diaphragm or the parameters of the sensing structure. As an example only, the properties of the diaphragm may include its modulus, dimensions (e.g., length, width, thickness), etc. The parameters of the sensing structure may include the internal structure, dimensions, and modulus of its housing, the mass of the sensing structure, and / or the dimensions and modulus of its transducer elements, etc. In some embodiments, a higher diaphragm modulus results in a higher second resonant frequency. The diaphragm modulus can be selected based on the desired magnitude of the second resonant frequency. For example, if a larger frequency range (e.g., 4000Hz–10000Hz) is required for the second resonant frequency, a diaphragm with a larger modulus (e.g., 5Gpa–300Gpa, 5Gpa–50Gpa) can be selected; if a smaller frequency range (e.g., 2000Hz–4000Hz) is required for the second resonant frequency, a diaphragm with a smaller modulus (e.g., 100MPa–5GPa) can be selected.

[0086] In some embodiments, the pickup structure may include a diaphragm and a liquid (or gel, or a combination of liquid and gel). The liquid (or gel, or a combination of liquid and gel) and the diaphragm together form a resonant system (such as a spring-mass system) having the aforementioned second resonant frequency. For example, the liquid (or gel, or a combination of liquid and gel) may be considered as the mass in the resonant system, and the diaphragm as the spring in the resonant system.

[0087] In some embodiments, the PCB in the diaphragm and sensing structure can be used to restrict the movement of the liquid (or gel, or a composition of liquid and gel). For example, the diaphragm can be placed at a first side (upper or lower) of the liquid (or gel, or a composition of liquid and gel), and a second side of the liquid (or gel, or a composition of liquid and gel) can be connected to the PCB in the sensing structure (left or right side) to restrict the movement of the liquid (or gel, or a composition of liquid and gel). It should be noted that in order to ensure that the liquid or gel does not leak from the diaphragm, the permeability of the diaphragm needs to be less than a threshold. In some embodiments, the number of diaphragms is not limited, such as 2, 3, 4, etc.

[0088] In some embodiments, the magnitude of the second resonant frequency can be adjusted by adjusting the properties of the liquid (or gel, or a combination of liquid and gel), the properties of the diaphragm, or the parameters of the sensing structure. For more related descriptions, please refer to the descriptions of the pickup structure containing liquid (or gel, or a combination of liquid and gel) or diaphragm above, which will not be repeated here.

[0089] In some embodiments, the pickup structure may include a diaphragm, a liquid (or gel, or a combination of liquid and gel), and a support. The liquid (or gel, or a combination of liquid and gel) and the diaphragm together form a resonant system (such as a spring-mass system) having the aforementioned second resonant frequency. For example, the liquid, gel, or a combination thereof may be considered as the mass in the resonant system, and the diaphragm as the spring in the resonant system.

[0090] In some embodiments, the diaphragm and support member can be used to restrict the movement of the liquid (or gel, or a composition of liquid and gel). For example, the diaphragm can be positioned at a first side end (upper or lower) of the liquid (or gel, or a composition of liquid and gel), and the support member can be located at a second side end (left or right) of the liquid (or gel, or a composition of liquid and gel) to restrict the movement of the liquid (or gel, or a composition of liquid and gel). In some embodiments, the diaphragm can be connected to the support member. The diaphragm can be fixed to the inner wall of the support member via its periphery. By way of example only, this connection method can include adhesive bonding, clamps, buckles, bolts, etc. In some embodiments, the number of diaphragms or supports is not limited, such as 2, 3, 4, etc.

[0091] In some embodiments, the magnitude of the second resonant frequency can be adjusted by adjusting the properties of the liquid (or gel, or a combination of liquid and gel), the properties of the diaphragm, the properties of the support, or the parameters of the sensing structure. For more related information, please refer to the description of the pickup structure containing liquid (or gel, or a combination of liquid and gel), diaphragm, or support above, which will not be repeated here.

[0092] In some embodiments, the pickup structure may include a diaphragm, a liquid (or gel, or a combination of liquid and gel), a support, and a mass. The liquid (or gel, or a combination of liquid and gel), the diaphragm, and the mass together form a resonant system (such as a spring-mass system) having the aforementioned second resonant frequency. For example, the liquid and the mass can be considered as the mass in the resonant system, and the diaphragm as the spring in the resonant system.

[0093] In some embodiments, the mass block may be placed in a liquid (or gel, or a composition of liquid and gel). A diaphragm and a support are used to limit the movement of the liquid (or gel, or a composition of liquid and gel). In some embodiments, the diaphragm may be located at a first side end (e.g., upper, lower) of the liquid (or gel, or a composition of liquid and gel), and the support may be located at a second side end (left, right) of the liquid (or gel, or a composition of liquid and gel) to restrict the movement of the liquid (or gel, or a composition of liquid and gel). In some embodiments, the number of diaphragms or supports is not limited, such as 2, 3, 4, etc. Further description of the support, liquid (or gel, or a composition of liquid and gel), or diaphragm can be found in the description of the pickup structure containing the support, liquid (or gel, or a composition of liquid and gel), or diaphragm described above, and will not be repeated here.

[0094] In some embodiments, the mass block can be in the shape of a cube, cuboid, cylinder, or ring. To ensure that the second resonant frequency provided by the pickup structure is within the target frequency range, in some embodiments, the thickness of the mass block (along the diaphragm vibration direction) is between 1µm and 5000µm. In some embodiments, the thickness of the mass block is between 1µm and 3000µm. In some embodiments, the thickness of the mass block is between 1µm and 1000µm. In some embodiments, the thickness of the mass block is between 1µm and 500µm. In some embodiments, the thickness of the mass block is between 1µm and 200µm. In some embodiments, the thickness of the mass block is between 1µm and 50µm.

[0095] To ensure that the second resonant frequency provided by the pickup structure is within the target frequency range, in some embodiments, the area of ​​the mass block (e.g., the cross-sectional area or base area perpendicular to the diaphragm vibration direction) is 0.1 mm²-100 mm². In some embodiments, the area of ​​the mass block is 0.1 mm²-50 mm². In some embodiments, the area of ​​the mass block is 0.1 mm²-10 mm². In some embodiments, the area of ​​the mass block is 0.1 mm²-6 mm². In some embodiments, the area of ​​the mass block is 0.1 mm²-3 mm². In some embodiments, the area of ​​the mass block is 0.1-1 mm².

[0096] To ensure that the second resonant frequency provided by the pickup structure is within the target frequency range, in some embodiments, the material density of the mass block is 2 g / cm³-100 g / cm³. In some embodiments, the material density of the mass block is 2 g / cm³-70 g / cm³. In some embodiments, the material density of the mass block is 5 g / cm³-50 g / cm³. In some embodiments, the material density of the mass block is 5 g / cm³-30 g / cm³. In some embodiments, the mass block may be made of metals such as lead, copper, silver, and tin, or an alloy of at least two metals.

[0097] In some embodiments, the number of mass blocks included in the pickup structure is not limited, such as one, two, or more. When the pickup structure includes two or more mass blocks, the two or more mass blocks can be fixed to the upper and lower surfaces of the diaphragm, respectively. In some embodiments, when the mass blocks are located on the lower surface of the polymer film or on both the upper and lower surfaces, the sensitivity of the sensing device is further improved.

[0098] In some embodiments, in addition to adjusting the second resonant frequency by modifying the properties of the liquid, gel, or their combination, the properties of the diaphragm, the properties of the support, or the parameters of the sensing structure, as described above, the second resonant frequency can also be adjusted by modifying the properties of the mass block (such as thickness, density, and radius). In some embodiments, for the same area, the thicker the mass block, the greater its total mass, and the smaller the second resonant frequency. In some embodiments, for the same volume, the greater the density of the mass block, the greater its mass, and the smaller the second resonant frequency of the sensing device.

[0099] In some embodiments, the pickup structure may include a diaphragm, a support, and a mass. The diaphragm and the mass together form a resonant system (such as a spring-mass system) having the aforementioned second resonant frequency. For example, the mass can be considered as the mass in the resonant system, and the diaphragm as the spring in the resonant system. In some embodiments, the mass can be located above the diaphragm. The support can be connected to the PCB in the sensing structure to support the diaphragm and the mass. Further descriptions of the diaphragm, support, mass, or adjustment of the second resonant frequency can be found in the description of the pickup structure containing the diaphragm, support, and mass above, and will not be repeated here.

[0100] By incorporating a pickup structure into the sensing device, a second resonant frequency lower than the first resonant frequency is provided. When the difference between the second and first resonant frequencies meets certain conditions, such as being between 1000Hz and 10000Hz, the sensitivity of the sensing device with the pickup structure is improved over a wider frequency range (e.g., 0Hz–15000Hz, 2000Hz–13000Hz, 3000Hz–12000Hz) compared to the sensing structure alone, especially near the second resonant frequency (e.g., 2000Hz–10000Hz, 3000Hz–4000Hz). In some embodiments, the sensitivity of the sensing device can be improved by 3dB–30dB over a wider frequency range. In some embodiments, the sensitivity of the sensing device can be improved by 3dB–45dB over a wider frequency range. In some embodiments, the sensitivity of the sensing device can be improved by 6dB–30dB over a wider frequency range.

[0101] It should be noted that the sensing device described above includes a single pickup structure, which is for illustrative purposes only and is not intended to limit the scope of protection of this specification. In some embodiments, the sensing device may include two or more pickup structures, each of which is the same as or similar to the pickup structure described above. Taking a sensing device including a sensing structure and two pickup structures as an example, the sensing structure can provide a first resonant frequency for the sensing device, and the two pickup structures can respectively provide a second resonant frequency and a third resonant frequency for the sensing device. The second resonant frequency and the third resonant frequency may satisfy different relationships depending on the actual application scenario of the sensing device. For example, the third resonant frequency is a low frequency, mid-low frequency, or mid-high frequency (such as within the frequency band of less than 7000Hz, 5000Hz, 4000Hz, 3000Hz, 1000Hz, or 500Hz), and the second resonant frequency may be greater than the third resonant frequency, belonging to a higher frequency band (such as above 2000Hz, above 4000Hz, above 5000Hz, or above 8000Hz). As another example, both the second resonant frequency and the third resonant frequency are mid-low frequencies. When a sensing device has a resonant frequency in the low-frequency or mid-low-frequency range, its sensitivity in the low-frequency range will be higher than that of a sensing structure (such as a condenser microphone 100 or a piezoelectric microphone 200). When the sensing device further has a resonant frequency in the high-frequency or mid-high-frequency range, its frequency response curve will be flatter in the mid-low-frequency range, which is more conducive to acquiring effective speech signals in this frequency band.

[0102] It should be noted that the above description of applying the pickup structure to an air conduction microphone is for illustrative purposes only and is not intended to limit the scope of protection of this specification. The above pickup structure can also be applied to other devices, such as microphones that use bone conduction as one of the main sound propagation methods, accelerometers, pressure sensing structures, hydrophones, energy harvesters, gyroscopes, etc. As an example only, the above pickup structure can be applied to microphones that use bone conduction as one of the main sound propagation methods. In conjunction with the above, a resonant system with a second resonant frequency is formed by the longitudinal vibration of the diaphragm. Vibration of the diaphragm in other directions may have adverse effects on the resonant system with the second resonant frequency (such as causing instability in the frequency response curve). In some embodiments, the input signal strength of bone conduction is relatively high. To avoid vibrations in the diaphragm of the pickup structure that are detrimental to the second resonant frequency, the modulus (e.g., Young's modulus) of the diaphragm in the pickup structure needs to be greater than a certain threshold, such as 5 GPa, 10 GPa, 20 GPa, etc. In addition, when the above-mentioned pickup structure is applied to a bone conduction microphone, the second resonant frequency can be adjusted by adjusting the parameters of the pickup structure, similar to its application in an air conduction microphone.

[0103] Figure 3 This is a schematic diagram of an exemplary sensing device according to some embodiments of this specification. Figure 4 This is a schematic diagram of an exemplary sensing device according to some embodiments of this specification.

[0104] like Figure 3 As shown, the sensing device 300 may include a sensing structure 300A (condenser microphone) and a pickup structure 300B. The sensing structure 300A may include a transducer element 310, a processor 320, a PCB 330, and a housing 350. The transducer element 310 may include a diaphragm 311 and a backplate 312. The sensing structure 300A and... Figure 1 The condenser microphone 100 shown is the same as or similar to the one described here, and will not be described in detail here.

[0105] In some embodiments, the sensing structure 300A may include a sound inlet (such as a sound inlet 370 shown in the dashed box) and a sound inlet on the housing 350 (not shown in the dashed box). Figure 3 (As shown in the image). The pickup structure 300B can communicate with the external sound of the sensing structure through this sound inlet (e.g., ...). Figure 3The air-conducted sound 340 shown is illustrated. In some embodiments, an acoustic cavity 360 is formed between the pickup structure 300B and the sensing structure 300A. External air-conducted sound 340 can act on the pickup structure 300B through this sound inlet, causing the pickup structure 300B to vibrate and deform, thereby changing the sound pressure within the acoustic cavity 360. Further, the transducer element 310 can convert the air-conducted sound 340 into an electrical signal based on the change in sound pressure within the acoustic cavity 360. In this process, the sensing structure 300A can provide a first resonant frequency for the sensing device 300. The pickup structure 300B can provide a second resonant frequency for the sensing device 300. For more details on the first and second resonant frequencies, please refer to the description of the first and second resonant frequencies above; further details will not be repeated here.

[0106] like Figure 3 As shown, the pickup structure 300B can be disposed between the transducer element 310 and the sound inlet 370 of the sensing structure 300A. For example, the pickup structure 300B can be disposed at the sound inlet 370. The pickup structure 300B may include a liquid, a gel, or a combination thereof. The liquid, gel, or combination thereof, together with the gas in the acoustic cavity 360, can form a resonant system having the aforementioned second resonant frequency. The pickup structure 300B composed of the liquid, gel, or combination thereof can be substantially parallel to the diaphragm 311. As used herein, "substantially parallel" means that the surface of the liquid, gel, or combination thereof (such as the upper surface or lower surface) is parallel to or deviates from the surface of the diaphragm 311 (such as the upper surface or lower surface) by less than 3 degrees, 5 degrees, 8 degrees, 10 degrees, etc.

[0107] like Figure 3 As shown, the liquid, gel, or composition thereof can be attached to the PCB 330. In some embodiments, the liquid, gel, or composition thereof may have a certain viscosity, thereby allowing it to remain fixed relative to the PCB 330. The magnitude of the second resonant frequency can be adjusted by adjusting the properties of the liquid, gel, or composition thereof (such as viscosity and density). For a more detailed description of adjusting the magnitude of the second resonant frequency, please refer to the description above containing the pickup structure of the liquid, gel, or composition thereof, which will not be repeated here.

[0108] In some embodiments, the pickup structure 300B may also be used with Figure 4 The sensing structure 400A (piezoelectric microphone) shown constitutes the sensing device 400. The sensing structure 400A may include a transducer element 411, a processor 420, a PCB 430, a housing 450, and a sound inlet 470. The sensing structure 400A and... Figure 2 The piezoelectric microphone 200 shown is the same as or similar to that shown, and will not be described further here. The sensing device 400 is similar to the sensing device 300, except that it contains different types of sensing structures. For more details, please refer to [reference needed]. Figure 3The description of the sensing device 300 in the text will not be repeated here.

[0109] Figure 5 This is a schematic diagram of an exemplary sensing device according to some embodiments of this specification. Figure 6 This is a schematic diagram of an exemplary sensing device according to some embodiments of this specification.

[0110] like Figure 5 As shown, the sensing device 500 may include a sensing structure 500A (condenser microphone) and a pickup structure 500B. The sensing structure 500A may include a transducer element 510, a processor 520, a PCB 530, and a housing 550. The transducer element 510 may include a diaphragm 511 and a backplate 512. The sensing structure 500A and... Figure 1 The condenser microphone 100 shown is or Figure 3 The sensor structure shown is the same as or similar to that of the 300A, and will not be described in detail here.

[0111] In some embodiments, the sensing structure 500A may include a sound inlet (such as a sound inlet 570 shown in the dashed box), and a sound inlet on the housing 550 (not shown in the dashed box). Figure 5 (As shown in the image). The pickup structure 500B can communicate with the external sound of the sensing structure through this sound inlet (e.g., ...). Figure 5 The air-conducted sound 540 shown is illustrated. In some embodiments, an acoustic cavity 560 is formed between the pickup structure 500B and the sensing structure 500A. External sound 540 can act on the pickup structure 500B through this sound inlet, causing the pickup structure 500B to vibrate and deform, thereby changing the sound pressure within the acoustic cavity 560. Further, the transducer element 510 can convert the air-conducted sound 540 into an electrical signal based on the change in sound pressure within the acoustic cavity 560. In this process, the sensing structure can provide a first resonant frequency for the sensing device 500. The pickup structure 500B can provide a second resonant frequency for the sensing device 500. For more details on the first and second resonant frequencies, please refer to the description of the first and second resonant frequencies above.

[0112] like Figure 5As shown, the pickup structure 500B can be disposed between the transducer element 510 and the sound inlet 570 of the sensing structure 500A. For example, the pickup structure 500B can be disposed at the sound inlet 570. The pickup structure 500B may include a liquid (or gel or a combination thereof) 582 and a support member 584. The liquid (or gel or a combination thereof) 582 and the gas in the acoustic cavity 560 can together form a resonant system having the aforementioned second resonant frequency. The support member 584 is used to restrict the movement of the liquid (or gel or a combination thereof) 582. The support member 584 can be fixedly connected to the PCB 530 and is located on the left and right sides of the liquid (or gel or a combination thereof) 582. In some embodiments, the magnitude of the second resonant frequency can be adjusted by adjusting the properties of the liquid (or gel or a combination thereof) 582 (such as viscosity, density) and / or the properties of the support member 584 (such as modulus). For more details on adjusting the magnitude of the second resonant frequency, please refer to the description of the pickup structure containing a liquid (or gel or a combination thereof) or a support member above.

[0113] In some embodiments, the pickup structure 500B may also be connected with... Figure 6 The sensing structure 600A (piezoelectric microphone) shown constitutes the sensing device 600. The sensing structure 600A may include a transducer element 611, a processor 620, a PCB 630, a housing 650, and a sound inlet 670. The sensing structure 600A and... Figure 2 The piezoelectric microphone 200 shown Figure 4 The sensing structure 400A shown is the same as or similar to that shown, and will not be described in detail here. Sensing device 600 is similar to sensing device 500, except that it contains different types of sensing structures. For more related descriptions, please refer to [reference needed]. Figure 5 The description of the sensing device 500 in the text.

[0114] Figure 7 This is a schematic diagram of an exemplary sensing device according to some embodiments of this specification. Figure 8 This is a schematic diagram of an exemplary sensing device according to some embodiments of this specification.

[0115] like Figure 7 As shown, the sensing device 700 may include a sensing structure 700A (condenser microphone) and a pickup structure 700B. The sensing structure 700A may include a transducer element 710, a processor 720, a PCB 730, and a housing 750. The transducer element 710 may include a diaphragm 711 and a backplate 712. The sensing structure 700A and... Figure 1 The condenser microphone 100 shown is or Figure 3 or Figure 5 The sensor structures shown are the same or similar to those of 300A or 500A, and will not be described in detail here.

[0116] In some embodiments, the sensing structure 700A may include a sound inlet (such as a sound inlet 770 shown in the dashed box), and a sound inlet on the housing 750 (not shown in the dashed box). Figure 7 (As shown in the image). The pickup structure 700B can communicate with the external sound of the sensing structure through this sound inlet (e.g., ...). Figure 7 The air-conducted sound 740 shown is illustrated. In some embodiments, an acoustic cavity 760 is formed between the pickup structure 700B and the sensing structure 700A. External sound 740 can act on the pickup structure 700B through this sound inlet, causing the pickup structure 700B to vibrate and deform, thereby changing the sound pressure within the acoustic cavity 760. Further, the transducer element 710 can convert the air-conducted sound 740 into an electrical signal based on the change in sound pressure within the acoustic cavity 760. In this process, the sensing structure can provide a first resonant frequency for the sensing device 700. The pickup structure 700B can provide a second resonant frequency for the sensing device 700. For more details on the first and second resonant frequencies, please refer to the description of the first and second resonant frequencies above.

[0117] like Figure 7 As shown, the pickup structure 700B can be disposed between the transducer element 710 and the sound inlet 770 of the sensing structure 700A. For example, the pickup structure 700B can be disposed at the sound inlet 770. The pickup structure 700B may include a diaphragm. The diaphragm can form a resonant system having the aforementioned second resonant frequency. The diaphragm can be connected to the PCB 730. In some embodiments, the magnitude of the second resonant frequency can be adjusted by adjusting the properties of the diaphragm (such as its modulus). For more description of the diaphragm or the adjustment of the magnitude of the second resonant frequency, please refer to the description of the pickup structure containing the diaphragm above.

[0118] In some embodiments, the pickup structure 700B may also be used with Figure 8 The sensing structure 800A (piezoelectric microphone) shown constitutes the sensing device 800. The sensing structure 800A may include a transducer element 811, a processor 820, a PCB 830, a housing 850, and a sound inlet 870. The sensing structure 800A and... Figure 2 The piezoelectric microphone 200 shown Figure 4 The sensing structures shown in Figure 6, such as 400A or 600A, are the same or similar and will not be described further here. Sensing device 800 is similar to sensing device 700, except that it contains different types of sensing structures. For more details, please refer to [reference needed]. Figure 7 The description of the sensing device 700 in the text.

[0119] Figure 9 This is a schematic diagram of an exemplary sensing device according to some embodiments of this specification. Figure 10 This is a schematic diagram of an exemplary sensing device according to some embodiments of this specification.

[0120] like Figure 9 As shown, the sensing device 900 may include a sensing structure 900A (condenser microphone) and a pickup structure 900B. The sensing structure 900A may include a transducer element 910, a processor 920, a PCB 930, and a housing 950. The transducer element 910 may include a diaphragm 911 and a backplate 912. The sensing structure 900A and... Figure 1 The condenser microphone 100 shown is or Figure 3 , Figure 5 or Figure 7 The sensor structures shown are the same or similar to those of 300A, 500A or 700A, and will not be described in detail here.

[0121] In some embodiments, the sensing structure 900A may include a sound inlet (such as a sound inlet 970 shown in the dashed box) and a sound inlet on the housing 950 (not shown in the dashed box). Figure 9 (As shown in the image). The pickup structure 900B can communicate with the external sound of the sensing structure through this sound inlet (e.g., ...). Figure 9 The air-conducted sound 940 shown is illustrated. In some embodiments, an acoustic cavity 960 is formed between the pickup structure 900B and the sensing structure 900A. External sound 940 can act on the pickup structure 900B through this sound inlet, causing the pickup structure 900B to vibrate and deform, thereby changing the sound pressure within the acoustic cavity 960. Further, the transducer element 910 can convert the air-conducted sound 940 into an electrical signal based on the change in sound pressure within the acoustic cavity 960. In this process, the sensing structure can provide a first resonant frequency for the sensing device 900. The pickup structure 900B can provide a second resonant frequency for the sensing device 900. For more details on the first and second resonant frequencies, please refer to the description of the first and second resonant frequencies above.

[0122] like Figure 9 As shown, the pickup structure 900B can be disposed between the transducer element 910 and the sound inlet 970 of the sensing structure 900A. For example, the pickup structure 900B can be disposed at the sound inlet 970. The pickup structure 900B may include a liquid (or gel or a composition thereof) 982 and a diaphragm 984. The liquid (or gel or a composition thereof) 982 and the diaphragm 984 can together form a resonant system having the aforementioned second resonant frequency. The diaphragm 984 and the PCB 930 are used to restrict the movement of the liquid (or gel or a composition thereof) 982. The PCB 930 can be fixedly connected to the liquid (or gel or a composition thereof) 982 and the diaphragm 984, and is located on the left and right sides of the liquid (or gel or a composition thereof) 982 and the diaphragm 984. The diaphragm 984 is located above and below the liquid (or gel or a composition thereof) 982.

[0123] like Figure 10 As shown, liquid (or gel or composition thereof) 982 and diaphragm 984 are substantially parallel to diaphragm 911. "Substantially parallel" as used herein means that the surfaces (e.g., upper and lower surfaces) of liquid (or gel or composition thereof) 982 or diaphragm 984 are parallel to or deviate from the surfaces (e.g., upper and lower surfaces) of diaphragm 911 by less than 3 degrees, 5 degrees, 8 degrees, 10 degrees, etc. In some embodiments, the magnitude of the second resonant frequency can be adjusted by adjusting the properties (e.g., viscosity, density) of liquid (or gel or composition thereof) 982 and / or the properties (e.g., modulus) of diaphragm 984. For further description of adjusting the magnitude of the second resonant frequency, please refer to the description above concerning the pickup structure containing the liquid (or gel or composition thereof) or diaphragm.

[0124] In some embodiments, the pickup structure 900B can also be used with Figure 10 The sensing structure 1000A (piezoelectric microphone) shown constitutes the sensing device 1000. The sensing structure 1000A may include a transducer element 1011, a processor 1020, a PCB 1030, a housing 1050, and a sound inlet 1070. The sensing structure 1000A and... Figure 2 The piezoelectric microphone 200 shown Figure 4 , 6 The sensing structures shown in Figure 8, such as 400A, 600A, or 800A, are the same or similar and will not be described further here. Sensing device 1000 is similar to sensing device 900, except that it contains different types of sensing structures. For more details, please refer to [reference needed]. Figure 9 The description of the sensing device 900 in the text.

[0125] Figure 11 This is a schematic diagram of an exemplary sensing device according to some embodiments of this specification. Figure 12 This is a schematic diagram of an exemplary sensing device according to some embodiments of this specification.

[0126] like Figure 11 As shown, the sensing device 1100 may include a sensing structure 1100A (condenser microphone) and a pickup structure 1100B. The sensing structure 1100A may include a transducer element 1110, a processor 1120, a PCB 1130, and a housing 1150. The transducer element 1110 may include a diaphragm 1111 and a backplate 1112. The sensing structure 1100A and... Figure 1 The condenser microphone 100 shown is or Figure 3 , 5 The sensing structures shown in 7 or 9 are the same as or similar to those of 300A, 500A, 700A or 900A, and will not be described in detail here.

[0127] In some embodiments, the sensing structure 1100A may include a sound inlet (such as the sound inlet 1170 shown in the dashed box), and a sound inlet on the housing 1150 (not shown in the dashed box). Figure 11 (As shown in the image). The sound pickup structure 1100B can communicate with the external sound of the sensing structure through this sound inlet (e.g., as shown in the image). Figure 11 The air-conducted sound 1140 is shown in the figure. In some embodiments, an acoustic cavity 1160 is formed between the pickup structure 1100B and the sensing structure 1100A. External sound 1140 can act on the pickup structure 1100B through the sound inlet, causing the pickup structure 1100B to vibrate and deform, thereby causing a change in the sound pressure within the acoustic cavity 1160. Further, the transducer element 1110 can convert the air-conducted sound 1140 into an electrical signal based on the change in sound pressure within the acoustic cavity 1160. In this process, the sensing structure 1100A can provide a first resonant frequency for the sensing device 1100. The pickup structure 1100B can provide a second resonant frequency for the sensing device 1100. For more details on the first and second resonant frequencies, please refer to the description of the first and second resonant frequencies above.

[0128] like Figure 11 As shown, the pickup structure 1100B can be disposed between the transducer 1110 and the sound inlet 1170 of the sensing structure 1100A. For example, the pickup structure 1100B can be disposed at the sound inlet 1170 and above the PCB 1130. The pickup structure 1100B may include a diaphragm 1182, a liquid (or gel or a combination thereof) 1184, and a support member 1186. The diaphragm 1182 and the liquid (or gel or a combination thereof) 1184 can together form a resonant system having the aforementioned second resonant frequency. The diaphragm 1182 can be fixed to the inner wall of the support member 1186 via its periphery. The diaphragm 1182 and the support member 1186 can be used to restrict the movement of the liquid (or gel or a combination thereof) 1184. The support member 1186 can be fixedly connected to the PCB 1130 and is located on the left and right sides of the liquid (or gel or a combination thereof) 1184. The diaphragm 1182 may be located on the upper and lower sides of the liquid (or gel or a combination thereof) 1184, respectively.

[0129] like Figure 11 As shown, diaphragm 1182 or liquid (or gel or a combination thereof) 1184 is substantially parallel to diaphragm 1111. "Substantially parallel" as used herein means that the surface (e.g., upper surface, lower surface) of diaphragm 1182 or liquid (or gel or a combination thereof) 1184 is parallel to or deviates from the surface (e.g., upper surface, lower surface) of diaphragm 1111 by less than 3 degrees, 5 degrees, 8 degrees, 10 degrees, etc.

[0130] In some embodiments, the magnitude of the second resonant frequency can be adjusted by modifying the properties of the diaphragm 1182 (such as modulus), the properties of the liquid (or gel or composition thereof) 1184 (such as viscosity, density), and / or the properties of the support 1186 (such as modulus). For further description of adjusting the magnitude of the second resonant frequency, please refer to the description above of the pickup structure containing the diaphragm, liquid (or gel or composition thereof), and / or support.

[0131] In some embodiments, the pickup structure 1100B may also be used with Figure 12 The sensing structure 1200A (piezoelectric microphone) shown constitutes the sensing device 1200. The sensing structure 1200A may include a transducer element 1211, a processor 1220, a PCB 1230, a housing 1250, and a sound inlet 1270. The sensing structure 1200A and... Figure 2 The piezoelectric microphone 200 shown Figure 4 , 6 The sensing structures shown in 8 or 10, 400A, 600A, 800A, or 1000A, are the same or similar, and will not be described further here. Sensing device 1200 is similar to sensing device 1100, except that it contains different types of sensing structures. For more details, please refer to [reference needed]. Figure 11 The description of the sensing device 1100 in the text.

[0132] Figure 13 This is a schematic diagram of an exemplary sensing device according to some embodiments of this specification. Figure 14 This is a schematic diagram of an exemplary sensing device according to some embodiments of this specification.

[0133] like Figure 13 As shown, the sensing device 1300 may include a sensing structure 1300A (condenser microphone) and a pickup structure 1300B. The sensing structure 1300A may include a transducer element 1310, a processor 1320, a PCB 1330, and a housing 1350. The transducer element 1310 may include a diaphragm 1311 and a backplate 1312. The sensing structure 1300A and... Figure 1 The condenser microphone 100 shown is or Figure 3 , 5 The sensing structures shown in 7, 9 or 11 are the same as or similar to those of 300A, 500A, 700A, 900A or 1100A, and will not be described in detail here.

[0134] In some embodiments, the sensing structure 1300A may include a sound inlet (such as the sound inlet 1370 shown in the dashed box, and a sound inlet on the housing 1350 (not shown in the dashed box) Figure 13 (As shown in the image). The pickup structure 1300B can communicate with the external sound of the sensing structure through this sound inlet (e.g., ...). Figure 13The air-conducted sound 1340 is shown in the figure. In some embodiments, an acoustic cavity 1360 is formed between the pickup structure 1300B and the sensing structure 1300A. External sound 1340 can act on the pickup structure 1300B through the sound inlet, causing the pickup structure 1300B to vibrate and deform, thereby causing a change in the sound pressure within the acoustic cavity 1360. Further, the transducer element 1310 can convert the air-conducted sound 1340 into an electrical signal based on the change in sound pressure within the acoustic cavity 1360. In this process, the sensing structure 1300A can provide a first resonant frequency for the sensing device 1300. The pickup structure 1300B can provide a second resonant frequency for the sensing device 1300. For more details on the first and second resonant frequencies, please refer to the description of the first and second resonant frequencies above.

[0135] like Figure 13 As shown, the pickup structure 1300B can be disposed between the transducer element 1310 and the sound inlet 1370 of the sensing structure 1300A. For example, the pickup structure 1300B can be disposed at the sound inlet 1370 and above the PCB 1330. The pickup structure 1300B may include a mass block 1382, a diaphragm 1384, and a support member 1386. The mass block 1382 and the diaphragm 1384 can together form a resonant system having the aforementioned second resonant frequency. The support member 1386 can be fixedly connected to the PCB 1330 and is located on the left and right sides of the diaphragm 1384 and fixedly connected to the diaphragm 1384. The mass block 1382 is located on the upper side of the diaphragm 1384.

[0136] like Figure 13 As shown, mass block 1382 and diaphragm 1384 are substantially parallel to diaphragm 1311. The term "substantially parallel" as used here means that the surface of mass block 1382 or diaphragm 1384 (such as the upper surface and lower surface) is parallel to or deviates from the surface of diaphragm 1311 (such as the upper surface and lower surface) by less than 3 degrees, 5 degrees, 8 degrees, 10 degrees, etc.

[0137] In some embodiments, the magnitude of the second resonant frequency can be adjusted by adjusting the properties of the mass block 1382 (such as mass, height, density, radius), the properties of the diaphragm 1384 (such as modulus), and / or the properties of the support member 1386 (such as modulus). For a more detailed description of adjusting the magnitude of the second resonant frequency, please refer to the description above concerning the pickup structure containing the diaphragm, mass block, and / or support member.

[0138] In some embodiments, the pickup structure 1300B can also be used with Figure 14The sensing structure 1400A (piezoelectric microphone) shown constitutes the sensing device 1400. The sensing structure 1400A may include a transducer element 1411, a processor 1420, a PCB 1430, a housing 1450, and a sound inlet 1470. The sensing structure 1400A and... Figure 2 The piezoelectric microphone 200 shown Figure 4 , 6 The sensing structures shown in Figures 8 or 12, 400A, 600A, 800A, or 1200A, are the same or similar, and will not be described further here. Sensing device 1400 is similar to sensing device 1300, except that it contains different types of sensing structures. For more details, please refer to [reference needed]. Figure 13 The description of the sensing device 1300 in the text.

[0139] Figure 15 This is a schematic diagram of an exemplary sensing device according to some embodiments of this specification. Figure 16 This is a schematic diagram of an exemplary sensing device according to some embodiments of this specification.

[0140] like Figure 15 As shown, the sensing device 1500 may include a sensing structure 1500A (condenser microphone) and a pickup structure 1500B. The sensing structure 1500A may include a transducer element 1510, a processor 1520, a PCB 1530, and a housing 1550. The transducer element 1510 may include a diaphragm 1511 and a backplate 1512. The sensing structure 1500A and... Figure 1 The condenser microphone 100 shown is or Figure 3 , 5 The sensing structures shown in 7, 9, 11 or 13 are the same as or similar to those of 300A, 500A, 700A, 900A, 1100A or 1300A, and will not be described in detail here.

[0141] In some embodiments, the sensing structure 1500A may include a sound inlet (such as a sound inlet 1570 shown in the dashed box, or a sound inlet on the housing 1550 (not shown in the dashed box)). Figure 15 (As shown in the image). The pickup structure 1500B can communicate with the external sound of the sensing structure through this sound inlet (e.g., ...). Figure 15The air-conducted sound 1540 shown is illustrated. In some embodiments, an acoustic cavity 1560 is formed between the pickup structure 1500B and the sensing structure 1500A. External sound 1540 can act on the pickup structure 1500B through this sound inlet, causing the pickup structure 1500B to vibrate and deform, thereby changing the sound pressure within the acoustic cavity 1560. Further, the transducer element 1510 can convert the air-conducted sound 1540 into an electrical signal based on the change in sound pressure within the acoustic cavity 1560. In this process, the sensing structure 1500A can provide a first resonant frequency for the sensing device 1500. The pickup structure 1500B can provide a second resonant frequency for the sensing device 1500. For more details on the first and second resonant frequencies, please refer to the description of the first and second resonant frequencies above.

[0142] like Figure 15 As shown, the pickup structure 1500B can be disposed between the transducer element 1510 and the sound inlet 1570 of the sensing structure 1500A. For example, the pickup structure 1500B can be disposed at the sound inlet 1570 and above the PCB 1530. The pickup structure 1500B may include a diaphragm 1582, a mass block 1584, a liquid (or gel or a combination thereof) 1586, and a support member 1588. The diaphragm 1582, the mass block 1584, and the liquid (or gel or a combination thereof) 1586 can together form a resonant system having the aforementioned second resonant frequency. The diaphragm 1582 and the support member 1588 are used to restrict the movement of the liquid (or gel or a combination thereof) 1586 and / or the mass block 1584. The support member 1588 can be fixedly connected to the PCB 1530 and is located on the left and right sides of the liquid (or gel or a combination thereof) 1586 and the diaphragm 1582. The diaphragm 1582 may be located above and below the liquid (or gel or a combination thereof) 1586, respectively. The outer side of the mass block 1584 is wrapped by the liquid (or gel or a combination thereof) 1586.

[0143] like Figure 15 As shown, diaphragm 1582, mass block 1584, or liquid (or gel or a combination thereof) 1586 are substantially parallel to diaphragm 1511. "Substantially parallel" as used herein means that the surfaces (e.g., upper and lower surfaces) of diaphragm 1582, mass block 1584, or liquid (or gel or a combination thereof) 1586 are parallel to or deviate from the surfaces (e.g., upper and lower surfaces) of diaphragm 1511 by less than 3 degrees, 5 degrees, 8 degrees, 10 degrees, etc.

[0144] In some embodiments, the magnitude of the second resonant frequency can be adjusted by modifying the properties of the diaphragm 1582 (e.g., modulus), the properties of the mass block 1584 (e.g., mass, height, density, radius), the properties of the liquid (or gel or a composition thereof) 1586 (e.g., viscosity, density), and / or the properties of the support 1588 (e.g., modulus). For further description of adjusting the magnitude of the second resonant frequency, please refer to the description above concerning the pickup structure containing the diaphragm, mass block, liquid (or gel or a composition thereof), and / or support.

[0145] In some embodiments, the pickup structure 1500B can also be used with Figure 16 The sensing structure 1600A (piezoelectric microphone) shown constitutes the sensing device 1600. The sensing structure 1600A may include a transducer element 1611, a processor 1620, a PCB 1630, and a housing 1650. The sensing structure 1600A and... Figure 2 The piezoelectric microphone 200 shown Figure 4 , 6 The sensing structures shown in 1, 8, 12, or 14, 400A, 600A, 800A, 1200A, or 1400A, are the same or similar, and will not be described further here. Sensing device 1600 is similar to sensing device 1500, except that it contains different types of sensing structures. For more details, please refer to [reference needed]. Figure 15 The description of the sensor 1500 in the text.

[0146] Figure 17 These are frequency response curves of exemplary sensing devices shown in some embodiments of this specification.

[0147] In some embodiments, the sensing device may include an air conduction microphone and a pickup structure (such as...) Figure 3-16 (The pickup structure shown). Figure 17 As shown, frequency response curve 1710 is the frequency response curve of the air conduction microphone, and frequency response curve 1720 is the frequency response curve of the pickup structure. The horizontal axis of frequency response curves 1710 or 1720 represents frequency in Hertz (Hz), and the vertical axis represents sensitivity in Volts (dB). Frequency response curve 1710 includes a resonance peak 1712, which corresponds to the resonant frequency of the air conduction microphone (also known as the first resonant frequency) (e.g., ...). Figure 17 (f0). The frequency response curve 1720 includes the resonance peak 1722, which corresponds to the resonant frequency of the pickup structure (also known as the second resonant frequency) (e.g., f0). Figure 17 In some embodiments, the difference between the first resonant frequency and the second resonant frequency (e.g., f1) Figure 17 Δf) is between 1000Hz and 10000Hz.

[0148] like Figure 17As shown, the second resonant frequency is lower than the first resonant frequency, thereby improving the sensitivity of the sensing device in the frequency range below the first resonant frequency, especially near the second resonant frequency. In some embodiments, compared to sensing devices without a pickup structure (such as sensing device 100 and sensing device 200), sensing devices with a pickup structure have higher sensitivity in the mid-to-low frequency range (such as 3000Hz–4000Hz) where voice information is richer. For example, the difference in sensitivity between the two (such as...) Figure 17 The Δv value is between 3dB and 30dB. For example, the difference in sensitivity between the two (e.g., Δv) is between 3dB and 30dB. Figure 17 The Δv value is between 3dB and 45dB. For example, the difference in sensitivity between the two (e.g., Δv) is between 3dB and 45dB. Figure 17 The Δv) ranges from 6 dB to 30 dB.

[0149] Figure 18 This is a schematic diagram of an exemplary sensing device according to some embodiments of this specification.

[0150] In some embodiments, the sensing device may include a sensing structure (a microphone that uses bone conduction as one of the main modes of sound propagation) and a pickup structure (such as... Figure 13 Or the pickup structure described in 14). For example... Figure 18 As shown, frequency response curve 1810 is the frequency response curve of this sensing structure, and frequency response curve 1820 is the frequency response curve of this pickup structure. Frequency response curve 1810 includes a resonance peak 1812, which corresponds to the resonant frequency of the sensing structure (also known as the first resonant frequency) (e.g., Figure 18 (f0). The frequency response curve 1820 includes the resonance peak 1822, which corresponds to the resonant frequency of the pickup structure (also known as the second resonant frequency) (e.g., f0). Figure 18 (f1). The second resonant frequency is lower than the first resonant frequency, which can improve the sensitivity of the sensing structure.

[0151] It should be noted that, Figure 17 The frequency response curve of the sensing device shown (where the sensing structure is an air conduction microphone) is the frequency response curve under ideal conditions. When the sensing structure is an air conduction microphone, the trend of its actual frequency response curve can be compared with... Figure 18 The frequency response curves shown have the same or similar trends.

[0152] The basic concepts have been described above. Obviously, for those skilled in the art, the detailed disclosure above is merely illustrative and does not constitute a limitation of this specification. Although not explicitly stated herein, those skilled in the art may make various modifications, improvements, and corrections to this specification. Such modifications, improvements, and corrections are suggested in this specification and therefore remain within the spirit and scope of the exemplary embodiments described herein.

[0153] Furthermore, this specification uses specific terms to describe embodiments thereof. For example, "an embodiment," "one embodiment," "an alternative embodiment," and / or "some embodiments" refer to a particular feature, structure, or characteristic associated with at least one embodiment of this specification. Therefore, it should be emphasized and noted that references to "an embodiment," "one embodiment," or "an alternative embodiment" in different locations throughout this specification do not necessarily refer to the same embodiment. Moreover, certain features, structures, or characteristics in one or more embodiments of this specification can be appropriately combined.

[0154] Furthermore, unless expressly stated in the claims, the order of processing elements and sequences, the use of numbers and letters, or other names described in this specification are not intended to limit the order of the processes and methods described herein. Although various examples have been discussed in the foregoing disclosure of some embodiments of the invention that are currently considered useful, it should be understood that such details are for illustrative purposes only, and the appended claims are not limited to the disclosed embodiments; rather, the claims are intended to cover all modifications and equivalent combinations that conform to the spirit and scope of the embodiments described herein. For example, while the system components described above can be implemented using hardware devices, they can also be implemented solely using software solutions, such as installing the described system on existing servers or mobile devices.

[0155] Similarly, it should be noted that, in order to simplify the description disclosed herein and thus aid in the understanding of one or more embodiments of the invention, the foregoing description of embodiments in this specification may sometimes combine multiple features into a single embodiment, drawing, or description thereof. However, this method of disclosure does not imply that the subject matter of this specification requires more features than those mentioned in the claims. In fact, the embodiments contain fewer features than all the features of a single embodiment disclosed above.

[0156] In some embodiments, numbers describing the quantity of components and attributes are used. It should be understood that such numbers used in the description of embodiments are modified in some examples with the terms "approximately," "approximately," or "generally." Unless otherwise stated, "approximately," "approximately," or "generally" indicates that the numbers are allowed to vary by ±20%. Accordingly, in some embodiments, the numerical parameters used in the specification and claims are approximate values, which may be changed depending on the characteristics required by individual embodiments. In some embodiments, numerical parameters should take into account specified significant digits and employ a general method of digit reservation. Although the numerical ranges and parameters used to confirm their breadth of range in some embodiments of this specification are approximate values, in specific embodiments, such values ​​are set as precisely as feasible.

[0157] For each patent, patent application, patent application publication, and other material, such as articles, books, specifications, publications, and documents, referenced in this specification, the entire contents of which are incorporated herein by reference. This excludes historical application documents that are inconsistent with or conflict with the content of this specification, as well as documents that limit the broadest scope of the claims in this specification (currently or subsequently appended to this specification). It should be noted that in the event of any inconsistency or conflict between the descriptions, definitions, and / or terminology used in the supplementary materials to this specification and the content of this specification, the descriptions, definitions, and / or terminology used in this specification shall prevail.

[0158] Finally, it should be understood that the embodiments described in this specification are merely illustrative of the principles of the embodiments described herein. Other variations may also fall within the scope of this specification. Therefore, alternative configurations of the embodiments described herein are intended to be illustrative rather than limiting, and should be considered consistent with the teachings of this specification. Accordingly, the embodiments described herein are not limited to those explicitly introduced and described herein.

Claims

1. A sensing device, characterized by include: A sensing structure having a first resonant frequency; as well as A pickup structure is configured to communicate with the external sound of the sensing device through a sound inlet. The sensing structure is combined with the additional pickup structure to form an acoustic cavity between the pickup structure and the sensing structure. When the pickup structure vibrates in response to air-conducted sound transmitted through the sound inlet, the vibration causes a change in sound pressure within the acoustic cavity. The sensing structure converts the air-conducted sound into an electrical signal based on the change in sound pressure within the acoustic cavity. The pickup structure provides a second resonant frequency to the sensing device, and the difference between the second resonant frequency and the first resonant frequency is in the range of 1000 Hz – 10000 Hz. The sound pickup structure includes a liquid or a gel; and The liquid or gel, together with the gas in the acoustic cavity, forms a resonant system having the second resonant frequency.

2. The sensing device according to claim 1, characterized in that, The pickup structure also includes a support member for limiting the movement of the liquid or the gel.

3. The sensing device according to claim 2, characterized in that, The support includes a tubular column connected to or in contact with the sensing structure; and The tubing includes straight tubing or curved tubing.

4. The sensing device according to claim 1, characterized in that, The sensing structure includes a printed circuit board; and The pickup structure includes a diaphragm, which is connected to the printed circuit board.

5. The sensing device according to claim 1, characterized in that, The pickup structure includes a diaphragm, a liquid, and a support, or includes a diaphragm, a gel, and a support. The liquid and the diaphragm together form a resonant system having the second resonant frequency, or the gel and the diaphragm together form a resonant system having the second resonant frequency; and The diaphragm and the support are used to define the movement of the liquid or gel.

6. The sensing device according to claim 1, characterized in that, The pickup structure includes a diaphragm and a liquid, or includes a diaphragm and a gel; and The liquid and the diaphragm together form a resonant system having the second resonant frequency, or the gel and the diaphragm together form a resonant system having the second resonant frequency.

7. The sensing device according to claim 1, characterized in that, The pickup structure includes a diaphragm, a liquid, a support, and a mass block, or includes a diaphragm, a gel, a support, and a mass block; The liquid, the diaphragm, and the mass block together form a resonant system having the second resonant frequency, or the gel, the diaphragm, and the mass block together form a resonant system having the second resonant frequency; and The diaphragm and support are used to define the movement of the liquid or gel; and The mass block is placed in the liquid or gel.

8. The sensing device according to claim 1, characterized in that, The pickup structure includes a diaphragm, a support component, and a mass block; The diaphragm and the mass block together form a resonant system having the second resonant frequency; and The support member is used to support the diaphragm and the mass block.

9. The sensing device according to any one of claims 4-8, characterized in that, The modulus of the diaphragm is 100 MPa - 300 GPa.

10. The sensing device according to any one of claims 4-8, characterized in that, The modulus of the diaphragm is 5 GPa - 50 GPa.

11. The sensing device according to any one of claims 4-8, characterized in that, The sensing structure includes a second diaphragm; and The modulus of the diaphragm is 1 / 100 - 1 / 10 of the modulus of the second diaphragm.

12. The sensing device according to any one of claims 4-8, characterized in that, The diaphragm is circular; and The radius of the diaphragm is 500 μm - 3 mm.

13. The sensing device of claim 1 or claim 2, wherein, The density of the liquid is 0 g / cm3 - 3 g / cm3.

14. The sensing device of claim 1 or claim 2, wherein, The viscosity of the liquid is 1 cst - 3000 cst.

15. The sensing device of claim 1, wherein, The second resonant frequency is lower than the first resonant frequency.

16. The sensing device of claim 1, wherein, The second resonant frequency is 2000 Hz - 10000 Hz.

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