Atomic force microscope cantilever probe and manufacturing method thereof

Abstract

The present invention discloses an atomic force microscope cantilever probe and a method for manufacturing the same. The atomic force microscope cantilever probe comprises: a probe cantilever, a probe tip, and a temperature-sensitive structure. A pressure-sensitive structure is formed on the probe cantilever; the probe tip is formed at one end of the probe cantilever; and the temperature-sensitive structure is formed on the probe tip and extends to the probe cantilever. The atomic force microscope cantilever probe of the present invention is a new type of self-sensing cantilever probe with a thermal measurement function applied to an atomic force microscope. In atomic force microscope technology, a piezoresistive cantilever probe or a piezoresistive cantilever probe is combined with a thermistor or thermocouple structure to study nanoscale temperature distribution.

Description

Technical Field

[0001] The present invention relates to the technical field of atomic force microscope detection and nanometer-scale thermal conductivity measurement, and in particular to an atomic force microscope cantilever probe and a manufacturing method thereof. Background Art

[0002] With the advancement of science and technology, the device integration density of semiconductor integrated circuits has increased rapidly in accordance with Moore's Law, and the size of electronic components and micro-electromechanical systems has also continued to shrink. Currently, the commonly used transistor production process can integrate billions of transistors within an area of ​​one square centimeter. Such densely packed transistors operating at extremely high frequencies inevitably generate enormous amounts of heat, including Joule heat generated by current flowing through the transistors and heat generated by the charging and discharging of capacitors. If this heat cannot be dissipated in a timely manner, the heat dissipation will significantly affect the lifespan and stability of the transistors. The problem of heat dissipation has become increasingly prominent, and heat dissipation capacity has become the most important factor limiting the pursuit of higher chip performance. Furthermore, in micro- and nanoscale devices, heat dissipation is a key issue that restricts device performance, making the study of the thermal conductivity properties of two-dimensional materials particularly important. Therefore, studying the regulation of nanoscale temperature distribution is of great significance.

[0003] In recent years, with the development of atomic force microscopy (AFM) technology, temperature sensing probes with integrated thermistors or thermocouples at the tip have emerged for measuring temperature distributions in two-dimensional materials and artificial nanostructures. However, these AFM probes still rely on optical lever technology to detect cantilever deformation and the interaction force between the tip and the sample, making it difficult to avoid laser irradiation and interference from the optical lever. Meanwhile, piezoresistive silicon cantilever probes for AFM are undergoing continuous development, achieving flexible and controllable contact with the tip and sample, while completely avoiding the photothermal interference of optical lever feedback on the measurement.

[0004] However, to date, piezoresistive silicon cantilever probes have only been used in morphology testing, with limited performance. There are currently few reports internationally on using piezoresistive silicon cantilever probes for thermal measurements.

[0005] The information disclosed in this background technology section is only intended to enhance understanding of the overall background of the invention and should not be regarded as an admission or any form of suggestion that the information constitutes the prior art already known to a person skilled in the art. Summary of the Invention

[0006] The purpose of the present invention is to provide an atomic force microscope cantilever probe and a manufacturing method thereof, and in the atomic force microscope technology, a novel piezoresistive cantilever probe or piezoresistive cantilever probe is combined with a temperature sensitive element to study nanoscale temperature distribution.

[0007] To achieve the above objectives, embodiments of the present invention provide an atomic force microscope cantilever probe, comprising: a probe cantilever, a probe tip, and a temperature-sensitive structure. The probe cantilever has a pressure-sensitive structure formed thereon; the probe tip is formed at one end of the probe cantilever; and the temperature-sensitive structure is formed on the probe tip and extends onto the probe cantilever.

[0008] In one or more embodiments of the present invention, a first metal lead electrode is formed on the probe cantilever, and the first metal lead electrode is located between the pressure-sensitive structure and the temperature-sensitive structure and is not connected to either the pressure-sensitive structure or the temperature-sensitive structure.

[0009] In one or more embodiments of the present invention, an insulating layer is formed between the pressure-sensitive structure and the temperature-sensitive structure.

[0010] In one or more embodiments of the present invention, the temperature-sensitive structure includes a temperature-sensitive element and a second metal lead electrode electrically connected to the temperature-sensitive element, the temperature-sensitive element is formed on the probe tip, and the second metal lead electrode extends from the probe tip to the probe cantilever.

[0011] In one or more embodiments of the present invention, the insulating layer completely covers the pressure-sensitive structure, and the second metal lead electrode extends from the probe tip to the insulating layer.

[0012] In one or more embodiments of the present invention, the temperature-sensitive element includes a thermistor or a thermocouple structure.

[0013] In one or more embodiments of the present invention, the pressure-sensitive structure includes a pressure-sensitive element and a third metal lead electrode, and the third metal lead electrode is electrically connected to the pressure-sensitive element.

[0014] In one or more embodiments of the present invention, the pressure-sensitive element includes a pressure-sensitive resistor or a pressure-sensitive capacitor.

[0015] In one or more embodiments of the present invention, the first metal lead electrode is a ground electrode, and the third metal lead electrode of the pressure-sensitive structure and the second metal lead electrode of the temperature-sensitive structure are signal-isolated by the first metal lead electrode.

[0016] An embodiment of the present invention also provides a method for manufacturing an atomic force microscope cantilever probe, including: providing an SOI wafer; preparing a probe tip on the SOI wafer; forming a pressure-sensitive structure on the SOI wafer; preparing a temperature-sensitive structure on the probe tip and the SOI wafer; and etching the SOI wafer to obtain an atomic force microscope cantilever probe.

[0017] In one or more embodiments of the present invention, before the step of preparing the temperature-sensitive structure on the probe tip and the upper SOI wafer, it also includes: a step of forming an insulating layer covering the pressure-sensitive structure on the surface of the pressure-sensitive structure; the temperature-sensitive structure is partially formed on the insulating layer.

[0018] In one or more embodiments of the present invention, the SOI wafer includes a top device silicon layer, an intermediate oxide layer and a substrate silicon layer; the step of preparing a probe tip on the SOI wafer includes: depositing a SiN layer on the surface of the top device silicon layer and the surface of the substrate silicon layer; etching a portion of the SiN layer and a portion of the top device silicon layer to the intermediate oxide layer, and corroding the side of the top device silicon layer to form an inclined surface; forming a first protective layer connected to the SiN layer on the surface of the top device silicon layer and the intermediate oxide layer on the inclined surface; etching and removing the SiN layer on the surface of the top device silicon layer, and corroding the top device silicon layer to form a probe tip.

[0019] In one or more embodiments of the present invention, the step of forming a pressure-sensitive structure on the SOI wafer includes: forming a second protective layer on the surface of the top device silicon layer, the second protective layer completely covering the probe tip; etching a portion of the second protective layer to expose the surface of the top device silicon layer to form a window; ion implanting the top device silicon layer at the window and annealing at a high temperature to form a pressure-sensitive element; removing the second protective layer and the SiN layer on the surface of the SOI wafer; preparing a metal lead electrode layer on the surface of the top device silicon layer, and patterning the metal lead electrode layer to form a first metal lead electrode and a third metal lead electrode arranged at intervals, wherein the third metal lead electrode forms an ohmic contact with the pressure-sensitive element.

[0020] In one or more embodiments of the present invention, the step of preparing a temperature-sensitive structure on the probe tip and the upper SOI wafer includes: preparing a temperature-sensitive element on the probe tip; preparing a second metal lead electrode electrically connected to the temperature-sensitive element on the surface of the top device silicon layer, and the second metal lead electrode extends from the probe tip to the insulating layer.

[0021] Compared with the existing technology, the atomic force microscope cantilever probe according to the embodiment of the present invention is a new type of self-sensing cantilever probe used in atomic force microscope with thermal measurement function. In atomic force microscope technology, a piezoresistive cantilever probe or a piezoresistive cantilever probe is combined with a thermistor or thermocouple structure to study nanoscale temperature distribution.

[0022] The atomic force microscope cantilever probe according to the embodiment of the present invention has exactly the same mechanical properties as a traditional cantilever probe, and can maintain flexible and controllable contact force with the sample and stable contact area with the sample while performing thermal measurements.

[0023] According to the atomic force microscope cantilever probe of the embodiment of the present invention, a temperature-sensitive element is set at the tip of the probe to obtain a thermal sensing signal of the tip. There is no need to introduce the optical lever structure of the traditional silicon cantilever probe, and there is no photothermal signal interference caused by the feedback of the traditional optical lever structure.

[0024] The atomic force microscope cantilever probe according to the embodiment of the present invention has a compact structure and does not have any auxiliary components that require space and frequent adjustment, so it has a wider range of applications and is suitable for operation in the atmosphere and extreme environments such as high vacuum environments or liquid environments.

[0025] According to the atomic force microscope cantilever probe and its manufacturing method in the embodiment of the present invention, a temperature-sensitive element is integrated at the probe tip and led out through a second metal lead electrode, so that the cantilever probe has the function of scanning and imaging the surface morphology of the atomic layer device, and can also realize the function of testing the photothermal transport properties of the atomic layer device surface.

[0026] According to the atomic force microscope cantilever probe and its manufacturing method according to the embodiment of the present invention, by optimizing the arrangement of metal lead electrodes, providing an insulating layer and a grounding electrode, the interference between the pressure-sensitive structure signal and the temperature-sensitive structure signal is overcome, thereby improving the sensitivity and performance of the atomic force microscope cantilever probe. BRIEF DESCRIPTION OF THE DRAWINGS

[0027] Figure 1 1 is a schematic diagram of the internal structure of an atomic force microscope cantilever probe according to one embodiment of the present invention (front view);

[0028] Figure 2 1 is a schematic structural diagram (cross-sectional view) of an atomic force microscope cantilever probe according to one embodiment of the present invention;

[0029] Figure 3 This is a process flow chart of a method for manufacturing an atomic force microscope cantilever probe according to one embodiment of the present invention;

[0030] Figure 4 Detailed process diagram of a method for manufacturing an atomic force microscope cantilever probe according to one embodiment of the present invention;

[0031] Figure 5 Detailed process diagram of a method for manufacturing an atomic force microscope cantilever probe according to one embodiment of the present invention;

[0032] Figure 6(a) to Figure 6(n)1 is a schematic structural diagram of the steps of a method for manufacturing an atomic force microscope cantilever probe according to one embodiment of the present invention. DETAILED DESCRIPTION

[0033] The specific embodiments of the present invention are described in detail below with reference to the accompanying drawings, but it should be understood that the protection scope of the present invention is not limited by the specific embodiments.

[0034] Unless expressly stated otherwise, throughout the specification and claims, the term "comprise" or variations such as "include" or "comprising", etc., will be understood to include the stated elements or components but not to exclude other elements or other components.

[0035] As mentioned in the background, heat dissipation in micro- and nanoscale devices is a key issue limiting device performance. Therefore, research on the thermal conductivity properties of two-dimensional materials has become particularly important, and so has the study of nanoscale temperature distribution control. Cantilever temperature sensing probes have been developed for measuring temperature distribution in two-dimensional materials and artificial nanostructures. However, these probes utilize optical lever technology to detect cantilever deformation and the interaction force between the tip and the sample, which poses the risk of laser irradiation and interference from the optical lever.

[0036] In order to solve the above problems, one embodiment of the present invention provides an atomic force microscope cantilever probe. In atomic force microscope technology, a new type of piezoresistive cantilever probe or piezoresistive cantilever probe is combined with a temperature-sensitive element to study nanoscale temperature distribution. By setting a temperature-sensitive element at the tip of the probe, a thermal sensing signal of the tip is obtained. There is no need to introduce the optical lever structure of the traditional silicon cantilever probe, and there is no photothermal signal interference caused by the feedback of the traditional optical lever structure. By optimizing the arrangement of the metal lead electrodes and setting an insulating layer and a ground electrode, the interference between the pressure-sensitive structure signal and the temperature-sensitive structure signal is overcome, thereby further improving the sensitivity and performance of the atomic force microscope cantilever probe.

[0037] like Figures 1 to 2 As shown, an atomic force microscope cantilever probe according to one embodiment of the present invention includes: a probe cantilever 10, a probe tip 20, a temperature-sensitive structure 30, an insulating layer 40 and a first metal lead electrode 50. A pressure-sensitive structure 11 is formed on the probe cantilever 10. The probe tip 20 is formed at one end of the probe cantilever 10. The temperature-sensitive structure 30 is formed on the probe tip 20 and extends to the probe cantilever 10. The insulating layer 40 is formed between the pressure-sensitive structure 11 and the temperature-sensitive structure 30. The first metal lead electrode 50 is formed on the probe cantilever 10 and is located between the pressure-sensitive structure 11 and the temperature-sensitive structure 30, and is not connected to the pressure-sensitive structure 11 and the temperature-sensitive structure 30. The first metal lead electrode 50 is a ground electrode, which is used for signal isolation between the pressure-sensitive structure 11 and the temperature-sensitive structure 30.

[0038] Exemplarily, the probe cantilever 10 and probe tip 20 are made of semiconductor materials. Semiconductors have a property that is dependent on external forces: their resistivity (denoted by ρ) changes with the applied stress, a phenomenon known as the piezoresistive effect. The relative change in resistivity under a unit stress is called the piezoresistive coefficient and is denoted by π. This can be expressed mathematically as ΔR / R = πσ.

[0039] Common semiconductor pressure sensors use N-type silicon wafers as their substrate. Therefore, in this embodiment, the probe cantilever 10 and probe tip 20 are preferably made of N-type silicon wafers. The probe cantilever 10 has a first surface and a second surface disposed opposite each other. The probe tip 20 is formed on the first surface of the probe cantilever 10 and is integrally formed with the probe cantilever 10. The probe cantilever 10 and probe tip 20 can be formed by corroding or etching an SOI wafer to form a resilient force-bearing portion with a specific geometric shape.

[0040] The pressure-sensitive structure 11 is formed on the first surface of the probe cantilever 10. The pressure-sensitive structure 11 includes a pressure-sensitive element 111 and a third metal lead electrode 112, and the third metal lead electrode 112 is electrically connected to the pressure-sensitive element 111. The pressure-sensitive element 111 can be a pressure-sensitive resistor or a pressure-sensitive capacitor. For example, at the force-bearing part of the probe cantilever 10, four P-type diffused resistors are made along different crystal directions, and then these four diffused resistors are used to form a four-arm Wheatstone bridge. The change in resistance value under the action of external force is converted into an electrical signal output. This Wheatstone bridge with pressure effect is the heart of the piezoresistive cantilever probe, usually called a piezoresistive bridge. The stress and deformation of the piezoresistive cantilever itself are achieved by making the piezoresistors on the cantilever and forming a Wheatstone bridge. The third metal lead electrode 112 is used to connect the diffused resistors and form lead wires to connect with the external circuit.

[0041] The temperature-sensitive structure 30 includes a temperature-sensitive element 31 and a second metal lead electrode 32 electrically connected to the temperature-sensitive element 31. The temperature-sensitive element 31 is formed on the probe tip 20, and the second metal lead electrode 32 extends from the probe tip 20 to the probe cantilever 10. The temperature-sensitive element 31 includes a thermistor or a thermocouple structure.

[0042] Without affecting the sensitive detection of stress and deformation by the piezoresistive bridge, the cantilever probe tip is integrated with a nanoscale thermistor or thermocouple structure, such as a thermocouple formed by Cr / Au. The temperature signal is obtained by measuring the output voltage of the thermocouple. Ultimately, in addition to the function of the atomic force microscope cantilever probe to scan and image the surface morphology of the atomic layer device, it can also realize the function of testing the photothermal transport properties of the atomic layer device surface.

[0043] Due to mechanical limitations, the width of the atomic force microscope's probe cantilever is very narrow. The stress and deformation of the cantilever itself are achieved through the piezoresistance fabricated on the cantilever, forming a Wheatstone bridge. Integrating a thermal measurement structure onto the probe tip requires even more leads and electrodes. Therefore, after integrating the temperature-sensitive element 31 onto the probe tip 20, how to extract the signal generated by the temperature-sensitive element 31 from the probe cantilever 10 without interfering with the signal generated by the pressure-sensitive element 111 is a problem that needs to be considered and resolved.

[0044] The present invention optimizes the arrangement of the second metal lead electrode 32 and the first metal lead electrode 112 by reasonably arranging their positions, and simultaneously provides an insulating layer 40 and a first metal lead electrode 50 to overcome signal interference between the leads.

[0045] Specifically, an insulating layer 40 is provided on the surface of the pressure-sensitive structure 11. The insulating layer 40 completely covers the pressure-sensitive structure 11. The second metal lead 32 of the temperature-sensitive structure 30 extends from the probe tip 20 to the insulating layer 40, and then forms a lead wire that is connected to the external circuit. The first metal lead electrode 50 is arranged along the edge of the area where the pressure-sensitive structure 11 is located and is formed between the pressure-sensitive structure 11 and the temperature-sensitive structure 30. Optionally, the insulating layer 40 may partially cover the first metal lead electrode 50, or may completely cover the first metal lead electrode 50.

[0046] The DC signal is isolated between the pressure-sensitive structure 11 and the temperature-sensitive structure 30 through the insulating layer 40, and the AC signal is isolated through the first metal lead electrode 50, which effectively solves the interference problem between the signals.

[0047] The atomic force microscope cantilever probe of the embodiment of the present invention is a new type of self-sensing cantilever probe with thermal measurement function applied to atomic force microscope. In atomic force microscope technology, a piezoresistive cantilever probe or a piezoresistive cantilever probe is combined with a thermistor or thermocouple structure to study nanoscale temperature distribution.

[0048] The atomic force microscope cantilever probe of the embodiment of the present invention is prepared into a piezoresistive cantilever probe by making a piezoresistive bridge structure on the cantilever. At the same time, a temperature sensitive element is integrated at the probe tip and led out through a second metal lead electrode, so that the cantilever probe has the function of scanning and imaging the surface morphology of the atomic layer device, and can also realize the function of testing the photothermal transport properties of the surface of the atomic layer device.

[0049] According to the atomic force microscope cantilever probe and its manufacturing method according to the embodiment of the present invention, by optimizing the arrangement of metal lead electrodes, providing an insulating layer and a grounding electrode, the interference between the pressure-sensitive structure signal and the temperature-sensitive structure signal is overcome, thereby improving the sensitivity and performance of the atomic force microscope cantilever probe.

[0050] refer to Figure 3 As shown, the present invention also provides a method for manufacturing an atomic force microscope cantilever probe, comprising: s1, providing an SOI wafer; s2, preparing a probe tip on the SOI wafer; s3, forming a pressure-sensitive structure on the SOI wafer; s4, forming a first metal lead electrode on the SOI wafer; s5, forming an insulating layer covering the pressure-sensitive structure on the surface of the pressure-sensitive structure; s6, preparing a temperature-sensitive structure on the probe tip, the SOI wafer, and the insulating layer; and s7, etching the SOI wafer to obtain an atomic force microscope cantilever probe.

[0051] As shown in FIG6(a), the SOI wafer is a 4-inch SOI wafer, including a top device silicon layer 1, an intermediate oxide layer 2, and a substrate silicon layer 3. Figure 4 As shown, in step s2, the step of preparing a probe tip on the SOI wafer specifically includes: s201, pre-treating the SOI wafer to ensure its surface cleanliness. s202, depositing a SiN layer 4 on the surface of the top device silicon layer 1 and the surface of the substrate silicon layer 3. s203, etching a portion of the SiN layer 4 and a portion of the top device silicon layer 1 to the intermediate oxide layer 2, and corroding the side of the top device silicon layer 1 to form an inclined surface 101 on the side. s204, forming a first protective layer 5 on the inclined surface 101 to connect with the SiN layer 4 on the surface of the top device silicon layer 1 and the intermediate oxide layer 2. s205, etching and removing the SiN layer 4 on the surface of the top device silicon layer 1, and corroding the top device silicon layer 1 to form a probe tip 20.

[0052] The following describes step s2: preparing a probe tip on an SOI wafer in detail with reference to the accompanying drawings.

[0053] 6( b ), a SiN layer 4 is deposited on the surface of the top device silicon layer 1 and the surface of the substrate silicon layer 3 of the SOI wafer.

[0054] Referring to FIG6(c), a mask layer A is coated on the SiN layer 4 on the surface of the top device silicon layer 1 of the SOI wafer, and a portion of the mask layer A, a portion of the SiN layer 4, and a portion of the top device silicon layer 1 are etched using photolithography and plasma etching processes until the intermediate oxide layer 2 is exposed.

[0055] 6 (d) , a KOH solution is used to etch the side surface of the top device silicon layer 1 formed by etching, so that the side surface forms an inclined surface 101 .

[0056] 6( e ), the inclined surface 101 of the top device silicon layer 1 is thermally oxidized to form a first protective layer 5 on the inclined surface 101 that is connected to the SiN layer 4 on the surface of the top device silicon layer 1 and the intermediate oxide layer 2. The first protective layer 5 is SiO 2 .

[0057] 6 (f), plasma etching is performed to remove the SiN layer 4 on the surface of the top device silicon layer 1, and a KOH solution is used to etch the top device silicon layer 1 to form a probe tip 20.

[0058] refer to Figure 5 As shown, in step s3, the step of forming a pressure-sensitive structure on the SOI wafer specifically includes: s301, forming a second protective layer 102 on the surface of the top device silicon layer 1, the second protective layer 102 completely covering the probe tip 20. s302, etching a portion of the second protective layer 102 to expose the surface of the top device silicon layer 1 to form a window 103. s303, ion implanting the top device silicon layer 1 at the window 103, and annealing at a high temperature to form a pressure-sensitive element 111. s304, removing the second protective layer 102 and the SiN layer 4 on the surface of the SOI wafer. s305, preparing a metal lead electrode layer on the surface of the top device silicon layer 1, and patterning the metal lead electrode layer to form a third metal lead electrode 112 and a first metal lead electrode 50 that are spaced apart, wherein the third metal lead electrode 112 forms an ohmic contact with the pressure-sensitive element 111.

[0059] The following describes step s3: forming a pressure-sensitive structure on the SOI wafer in detail with reference to the accompanying drawings.

[0060] 6( g ), the surface of the top device silicon layer 1 of the etched SOI wafer is thermally oxidized to form a second protective layer 102. The second protective layer 102 completely covers the probe tip 20. The second protective layer 102 is also SiO 2 .

[0061] 6 (h), a portion of the second protective layer 102 is etched by photolithography and BOE wet etching to expose the surface of the top device silicon layer 1 to form a window 103.

[0062] 6( i ), ion implantation is performed on the top device silicon layer 1 at the window 103 and high-temperature annealing is performed to form a pressure-sensitive element 111 .

[0063] 6( j ), the second protective layer 102 , the first protective layer 5 and the SiN layer 4 on the surface of the SOI wafer are removed.

[0064] Referring to Figure 6(k), a metal lead electrode layer is formed on the surface of the top device silicon layer 1, and the metal lead electrode layer is etched into a third metal lead electrode 112 and a first metal lead electrode 50 that are spaced apart by photolithography patterning and stripping processes. The third metal lead electrode 112 is subjected to rapid annealing to form an ohmic contact with the pressure-sensitive element 111 in the area where the pressure-sensitive element 111 is located.

[0065] Referring to FIG. 6( l ), ​​in step s5, the step of forming an insulating layer covering the pressure-sensitive structure on the surface of the pressure-sensitive structure specifically includes: depositing an oxide layer in the area where the pressure-sensitive element 111 is located and on the third metal lead electrode 112 and patterning and etching the oxide layer to form an insulating layer 40. The insulating layer 40 completely covers the pressure-sensitive element 111 and the third metal lead electrode 112. The insulating layer 40 may also partially cover the first metal lead electrode 50 or completely cover the first metal lead electrode 50.

[0066] As shown in FIG6(m), a temperature-sensitive element 31 is formed on the probe tip 20. Simultaneously, a second metal lead electrode 32 electrically connected to the temperature-sensitive element 31 is formed on the surface of the top device silicon layer 1. The second metal lead electrode 32 extends from the probe tip 20 to the insulating layer 40. The second metal lead electrode 32 is disposed without contact with the first metal lead electrode 50.

[0067] 6( n ), the substrate silicon layer of the SOI wafer is photolithographically processed to prepare a cantilever release window region; further deep silicon etching is performed to complete the release of the cantilever probe.

[0068] Compared with the existing technology, the atomic force microscope cantilever probe according to the embodiment of the present invention is a new type of self-sensing cantilever probe used in atomic force microscope with thermal measurement function. In atomic force microscope technology, a piezoresistive cantilever probe or a piezoresistive cantilever probe is combined with a thermistor or thermocouple structure to study nanoscale temperature distribution.

[0069] The atomic force microscope cantilever probe according to the embodiment of the present invention has exactly the same mechanical properties as a traditional cantilever probe, and can maintain flexible and controllable contact force with the sample and stable contact area with the sample while performing thermal measurements.

[0070] According to the atomic force microscope cantilever probe of the embodiment of the present invention, a temperature-sensitive element is set at the tip of the probe to obtain a thermal sensing signal of the tip. There is no need to introduce the optical lever structure of the traditional silicon cantilever probe, and there is no photothermal signal interference caused by the feedback of the traditional optical lever structure.

[0071] The atomic force microscope cantilever probe according to the embodiment of the present invention has a compact structure and does not have any auxiliary components that require space and frequent adjustment, so it has a wider range of applications and is suitable for operation in the atmosphere and extreme environments such as high vacuum environments or liquid environments.

[0072] According to the atomic force microscope cantilever probe and its manufacturing method in the embodiment of the present invention, a temperature-sensitive element is integrated at the probe tip and led out through a second metal lead electrode, so that the cantilever probe has the function of scanning and imaging the surface morphology of the atomic layer device, and can also realize the function of testing the photothermal transport properties of the atomic layer device surface.

[0073] According to the atomic force microscope cantilever probe and its manufacturing method according to the embodiment of the present invention, by optimizing the arrangement of metal lead electrodes, providing an insulating layer and a grounding electrode, the interference between the pressure-sensitive structure signal and the temperature-sensitive structure signal is overcome, thereby improving the sensitivity and performance of the atomic force microscope cantilever probe.

[0074] The foregoing descriptions of specific exemplary embodiments of the present invention are for purposes of illustration and description. These descriptions are not intended to limit the invention to the precise forms disclosed, and it is apparent that many variations and modifications are possible in light of the foregoing teachings. The exemplary embodiments have been selected and described for the purpose of explaining the specific principles of the invention and their practical application, thereby enabling those skilled in the art to realize and utilize a variety of exemplary embodiments of the invention and various options and modifications. The scope of the invention is intended to be defined by the claims and their equivalents.

Claims

1. An atomic force microscope cantilever probe, characterized in that: include: a probe cantilever, wherein a pressure-sensitive structure is formed on the probe cantilever, and the pressure-sensitive structure includes a third metal lead electrode; a probe tip formed at one end of the probe cantilever; a temperature-sensitive structure formed on the probe tip and extending to the probe cantilever, the temperature-sensitive structure comprising a second metal lead electrode; A first metal lead electrode is formed on the probe cantilever, and the first metal lead electrode is located between the pressure-sensitive structure and the temperature-sensitive structure and is not connected to the pressure-sensitive structure and the temperature-sensitive structure; the first metal lead electrode is used to isolate the third metal lead electrode of the pressure-sensitive structure from the second metal lead electrode of the temperature-sensitive structure; An insulating layer is formed between the pressure-sensitive structure and the temperature-sensitive structure; The insulating layer completely covers the pressure-sensitive structure.

2. The atomic force microscope cantilever probe according to claim 1, wherein: The temperature-sensitive structure includes a temperature-sensitive element electrically connected to the second metal lead electrode. The temperature-sensitive element is formed on the probe tip. The second metal lead electrode extends from the probe tip to the probe cantilever.

3. The atomic force microscope cantilever probe according to claim 2, wherein: The second metal lead electrode extends from the probe tip to the insulating layer.

4. The atomic force microscope cantilever probe according to claim 1, wherein: The pressure-sensitive structure includes a pressure-sensitive element, and the third metal lead electrode is electrically connected to the pressure-sensitive element.

5. A method for manufacturing an atomic force microscope cantilever probe, characterized in that: include: Provide SOI wafers; Prepare probe tips on SOI wafers; forming a pressure-sensitive structure on the SOI wafer, wherein the pressure-sensitive structure includes a third metal lead electrode; forming an insulating layer covering the pressure-sensitive structure on the surface of the pressure-sensitive structure; Preparing a temperature-sensitive structure on the probe tip and the SOI wafer, wherein the temperature-sensitive structure is partially formed on the insulating layer and includes a second metal lead electrode; Etching the SOI wafer to obtain an atomic force microscope cantilever probe; In which, while the pressure-sensitive structure is formed on the SOI wafer, a first metal lead electrode is also formed on the SOI wafer. The first metal lead electrode is located between the pressure-sensitive structure and the temperature-sensitive structure and is not connected to the pressure-sensitive structure and the temperature-sensitive structure; the first metal lead electrode is used to isolate signals between the third metal lead electrode of the pressure-sensitive structure and the second metal lead electrode of the temperature-sensitive structure.

6. The method for manufacturing an atomic force microscope cantilever probe according to claim 5, wherein: The SOI wafer includes a top device silicon layer, an intermediate oxide layer and a substrate silicon layer; The step of preparing a probe tip on an SOI wafer includes: Depositing a SiN layer on the surface of the top device silicon layer and the surface of the substrate silicon layer; Etching a portion of the SiN layer and a portion of the top device silicon layer to the intermediate oxide layer, and etching a side surface of the top device silicon layer to form an inclined surface; forming a first protective layer on the inclined surface, the first protective layer being connected to the SiN layer on the surface of the top device silicon layer and the intermediate oxide layer; The SiN layer on the surface of the top device silicon layer is removed by etching, and the top device silicon layer is corroded to form a probe tip.

7. The method for manufacturing an atomic force microscope cantilever probe according to claim 6, wherein: The step of forming a pressure-sensitive structure on the SOI wafer includes: forming a second protective layer on the surface of the top device silicon layer, wherein the second protective layer completely covers the probe tip; Etching a portion of the second protective layer until a surface of the top device silicon layer is exposed to form a window; Ion implantation is performed on the top device silicon layer at the window, and high-temperature annealing is performed to form a pressure-sensitive element; removing the second protective layer and the SiN layer from the surface of the SOI wafer; A metal lead electrode layer is prepared on the surface of the top device silicon layer, and the metal lead electrode layer is patterned to form a third metal lead electrode and a first metal lead electrode that are spaced apart, wherein the third metal lead electrode forms an ohmic contact with the pressure sensitive element.

8. The method for manufacturing an atomic force microscope cantilever probe according to claim 7, wherein: The steps of preparing the temperature-sensitive structure on the probe tip and the upper SOI wafer include: preparing a temperature-sensitive element on the probe tip; A second metal lead electrode electrically connected to the temperature sensitive element is prepared on the surface of the top device silicon layer, and the second metal lead electrode extends from the probe tip to the insulating layer.

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