Temperature control methods, devices, electronic equipment and storage media

Abstract

This application provides a temperature control method, apparatus, electronic device, and storage medium. The temperature control method includes: during the growth of single-crystal silicon, acquiring an average pulling speed and a first adjustment amount; responding to the average pulling speed being greater than a preset target pulling speed, decreasing the crucible rotation speed according to the first adjustment amount to increase the thermal field temperature; and responding to the average pulling speed being less than the target pulling speed, increasing the crucible rotation speed according to the first adjustment amount to decrease the thermal field temperature. This application embodiment achieves faster and more accurate adjustment of the thermal field temperature by adjusting the crucible rotation speed, realizing instantaneous control of the thermal field temperature, significantly shortening the control cycle of the thermal field temperature, and reducing the fluctuation range of the thermal field temperature.

Description

Technical Field

[0001] This application relates to the field of semiconductor technology, and in particular to a temperature control method, apparatus, electronic device, and storage medium. Background Technology

[0002] Monocrystalline silicon, as a semiconductor material, is mainly used in the photovoltaic and semiconductor fields. Most monocrystalline silicon is manufactured using the Czochralski (CZ) method. The CZ method for producing monocrystalline silicon mainly includes steps such as cleaning, charging, furnace assembly, material preparation, pressure treatment, temperature control, crystal pulling, shoulder formation, shoulder rotation, diameter equalization, and finishing. Among these, the monocrystalline silicon growth steps include crystal pulling, shoulder formation, shoulder rotation, and diameter equalization.

[0003] One factor affecting the efficiency of monocrystalline silicon growth is edge breakage (wire breakage). Edge breakage results in significant wasted furnace time, impacting the efficiency of the growth process and consequently affecting production costs. The thermal field temperature is a contributing factor to edge breakage during monocrystalline silicon growth. Therefore, accurately controlling the thermal field temperature can reduce the probability of edge breakage.

[0004] Existing technologies for thermal field temperature control generally employ thermal field power control, aiming to control the thermal field temperature by adjusting the thermal field power. However, in practical applications, the thermal field system resembles a thermostat, which is characterized by temperature inertia. Consequently, there is a significant lag in the matching between thermal field temperature and thermal field power, resulting in a long control cycle and large fluctuations in thermal field temperature. Summary of the Invention

[0005] In view of the above problems, embodiments of this application propose a temperature control method, device, electronic device and storage medium that can accurately control the thermal field temperature during the growth of single crystal silicon.

[0006] According to one aspect of an embodiment of this application, a temperature control method is provided, the method comprising:

[0007] During the growth of monocrystalline silicon, the average pulling speed and the first adjustment amount of the monocrystalline silicon are obtained;

[0008] In response to the average lifting speed being greater than the preset target lifting speed, the crucible rotation speed is reduced by the first adjustment amount to increase the thermal field temperature.

[0009] In response to the average lifting speed being less than the target lifting speed, the crucible rotation speed is increased by the first adjustment amount to reduce the thermal field temperature.

[0010] Optionally, obtaining the first adjustment amount includes: calculating a first difference between the target lifting speed and the average lifting speed; multiplying the first difference by a preset first coefficient as the first adjustment amount; the first coefficient represents the correspondence between the average lifting speed and the crucible rotation speed.

[0011] Optionally, obtaining the average pulling speed and the first adjustment amount of the monocrystalline silicon includes: obtaining the average pulling speed and the first adjustment amount of the monocrystalline silicon according to a preset adjustment cycle; decreasing the crucible rotation speed according to the first adjustment amount includes: decreasing the crucible rotation speed according to the first adjustment amount based on the principle that the adjustment amount in a single cycle does not exceed a preset single adjustment amount threshold, and / or, the cumulative adjustment amount does not exceed a preset cumulative adjustment amount threshold; increasing the crucible rotation speed according to the first adjustment amount includes: increasing the crucible rotation speed according to the first adjustment amount based on the principle that the adjustment amount in a single cycle does not exceed a preset single adjustment amount threshold, and / or, the cumulative adjustment amount does not exceed a preset cumulative adjustment amount threshold.

[0012] Optionally, after obtaining the average pulling speed of the monocrystalline silicon, the method further includes: obtaining the pulling speed change rate and a second adjustment amount of the monocrystalline silicon; decreasing the crucible rotation speed according to the first adjustment amount includes: in response to the pulling speed change rate being greater than a preset target change rate, decreasing the crucible rotation speed according to the difference between the first adjustment amount and the second adjustment amount; in response to the pulling speed change rate being less than the target change rate, decreasing the crucible rotation speed according to the sum of the first adjustment amount and the second adjustment amount; increasing the crucible rotation speed according to the first adjustment amount includes: in response to the pulling speed change rate being greater than the target change rate, increasing the crucible rotation speed according to the difference between the first adjustment amount and the second adjustment amount; in response to the pulling speed change rate being less than the target change rate, increasing the crucible rotation speed according to the sum of the first adjustment amount and the second adjustment amount.

[0013] Optionally, obtaining the second adjustment amount includes: calculating a second difference between the target rate of change and the rate of change of the lifting speed; multiplying the second difference by a preset second coefficient as the second adjustment amount; the second coefficient represents the correspondence between the rate of change of the lifting speed and the crucible rotation speed.

[0014] Optionally, obtaining the pulling speed change rate and the second adjustment amount of the monocrystalline silicon includes: obtaining the pulling speed change rate and the second adjustment amount of the monocrystalline silicon according to a preset adjustment cycle; reducing the crucible rotation speed according to the difference between the first adjustment amount and the second adjustment amount includes: reducing the crucible rotation speed according to the difference between the first adjustment amount and the second adjustment amount based on the principle that the adjustment amount in a single cycle does not exceed a preset single adjustment amount threshold, and / or, the cumulative adjustment amount does not exceed a preset cumulative adjustment amount threshold; reducing the crucible rotation speed according to the sum of the first adjustment amount and the second adjustment amount includes: based on the principle that the adjustment amount in a single cycle does not exceed a preset single adjustment amount threshold, and / or, the cumulative adjustment amount does not exceed a preset cumulative adjustment amount threshold. The principle is to decrease the crucible rotation speed according to the sum of the first adjustment amount and the second adjustment amount; the principle is to increase the crucible rotation speed according to the difference between the first adjustment amount and the second adjustment amount, which includes: increasing the crucible rotation speed according to the difference between the first adjustment amount and the second adjustment amount based on the principle that the adjustment amount in a single cycle does not exceed a preset single adjustment amount threshold, and / or, the principle that the total cumulative adjustment does not exceed a preset total cumulative adjustment threshold; the principle is to increase the crucible rotation speed according to the sum of the first adjustment amount and the second adjustment amount, which includes: increasing the crucible rotation speed according to the sum of the first adjustment amount and the second adjustment amount based on the principle that the adjustment amount in a single cycle does not exceed a preset single adjustment amount threshold, and / or, the principle that the total cumulative adjustment does not exceed a preset total cumulative adjustment threshold.

[0015] Optionally, the single-crystal silicon growth process includes a shoulder-forming step and / or a constant-diameter step.

[0016] According to another aspect of the embodiments of this application, a temperature control device is provided, the device comprising:

[0017] The first acquisition module is used to acquire the average pulling speed and the first adjustment amount of the single crystal silicon during the growth process of the single crystal silicon.

[0018] The first adjustment module is used to reduce the crucible rotation speed according to the first adjustment amount in response to the average lifting speed being greater than the preset target lifting speed, so as to increase the temperature of the hot zone.

[0019] The second adjustment module is used to increase the crucible rotation speed by the first adjustment amount in response to the average lifting speed being less than the target lifting speed, so as to reduce the temperature of the hot zone.

[0020] Optionally, the first acquisition module includes: a first calculation unit, configured to calculate a first difference between the target lifting speed and the average lifting speed; and a second calculation unit, configured to multiply the first difference by a preset first coefficient as the first adjustment amount; the first coefficient represents the correspondence between the average lifting speed and the crucible rotation speed.

[0021] Optionally, the first acquisition module is specifically used to acquire the average pulling speed and the first adjustment amount of the monocrystalline silicon according to a preset adjustment cycle; the first adjustment module is specifically used to reduce the crucible rotation speed according to the first adjustment amount based on the principle that the adjustment amount in a single cycle does not exceed a preset single adjustment amount threshold, and / or the principle that the cumulative adjustment amount does not exceed a preset cumulative adjustment amount threshold; the second adjustment module is specifically used to increase the crucible rotation speed according to the first adjustment amount based on the principle that the adjustment amount in a single cycle does not exceed a preset single adjustment amount threshold, and / or the principle that the cumulative adjustment amount does not exceed a preset cumulative adjustment amount threshold.

[0022] Optionally, the apparatus further includes: a second acquisition module, configured to acquire the pulling speed change rate and a second adjustment amount of the monocrystalline silicon; the first adjustment module, specifically configured to, in response to the pulling speed change rate being greater than a preset target change rate, decrease the crucible rotation speed according to the difference between the first adjustment amount and the second adjustment amount; and in response to the pulling speed change rate being less than the target change rate, decrease the crucible rotation speed according to the sum of the first adjustment amount and the second adjustment amount; the second adjustment module, specifically configured to, in response to the pulling speed change rate being greater than the target change rate, increase the crucible rotation speed according to the difference between the first adjustment amount and the second adjustment amount; and in response to the pulling speed change rate being less than the target change rate, increase the crucible rotation speed according to the sum of the first adjustment amount and the second adjustment amount.

[0023] Optionally, the second acquisition module includes: a third calculation unit for calculating a second difference between the target rate of change and the rate of change of the lifting speed; and a fourth calculation unit for multiplying the second difference by a preset second coefficient as the second adjustment amount; the second coefficient represents the correspondence between the rate of change of the lifting speed and the crucible rotation speed.

[0024] Optionally, the second acquisition module is specifically used to acquire the pulling speed change rate and the second adjustment amount of the monocrystalline silicon according to a preset adjustment cycle; the first adjustment module is specifically used to, in response to the pulling speed change rate being greater than a preset target change rate, reduce the crucible rotation speed according to the difference between the first adjustment amount and the second adjustment amount, based on the principle that the adjustment amount in a single cycle does not exceed a preset single adjustment amount threshold, and / or, the cumulative adjustment amount does not exceed a preset cumulative adjustment amount threshold; in response to the pulling speed change rate being less than the target change rate, reduce the crucible rotation speed according to the principle that the adjustment amount in a single cycle does not exceed a preset single adjustment amount threshold, and / or, the cumulative adjustment amount does not exceed a preset cumulative adjustment amount threshold, according to the difference between the first adjustment amount and the second adjustment amount. The sum of the first adjustment amount and the second adjustment amount decreases the crucible rotation speed; the second adjustment module is specifically used to increase the crucible rotation speed according to the difference between the first adjustment amount and the second adjustment amount in response to the lifting speed change rate being greater than the target change rate, based on the principle that the adjustment amount in a single cycle does not exceed a preset single adjustment amount threshold, and / or the principle that the cumulative adjustment amount does not exceed a preset cumulative adjustment amount threshold; and to increase the crucible rotation speed according to the sum of the first adjustment amount and the second adjustment amount in response to the lifting speed change rate being less than the target change rate, based on the principle that the adjustment amount in a single cycle does not exceed a preset single adjustment amount threshold, and / or the principle that the cumulative adjustment amount does not exceed a preset cumulative adjustment amount threshold.

[0025] Optionally, the single-crystal silicon growth process includes a shoulder-forming step and / or a constant-diameter step.

[0026] According to another aspect of the embodiments of this application, an electronic device is provided, comprising: one or more processors; and one or more computer-readable storage media having instructions stored thereon; wherein, when the instructions are executed by the one or more processors, the processors cause the processors to perform the temperature control method as described in any of the preceding claims.

[0027] According to another aspect of the embodiments of this application, a computer-readable storage medium is provided having a computer program stored thereon that, when executed by a processor, causes the processor to perform the temperature control method as described in any of the preceding claims.

[0028] In this embodiment, on the one hand, considering that changes in crucible rotation speed can cause changes in silicon molten convection, which in turn can cause changes in the silicon molten heat conduction rate, and these changes can lead to changes in the thermal field temperature, specifically, a smaller crucible rotation speed results in less silicon molten convection, a larger silicon molten heat conduction rate, and a higher thermal field temperature. Therefore, the thermal field temperature can be indirectly controlled by controlling the crucible rotation speed. On the other hand, the trend of thermal field temperature change is measured by the average pulling speed of the single-crystal silicon. If the average pulling speed is greater than the target pulling speed, it indicates that the current average pulling speed is too fast, resulting in a lower current thermal field temperature, which needs to be increased. Therefore, the thermal field temperature can be increased by decreasing the crucible rotation speed. If the average pulling speed is less than the target pulling speed, it indicates that the current average pulling speed is too slow, resulting in a higher current thermal field temperature, which needs to be decreased. Therefore, the thermal field temperature can be increased by increasing the crucible rotation speed. By adjusting the crucible rotation speed, the thermal field temperature can be adjusted more quickly and accurately, achieving instantaneous control of the thermal field temperature, greatly shortening the control cycle of the thermal field temperature, and reducing the fluctuation range of the thermal field temperature. Attached Figure Description

[0029] To more clearly illustrate the technical solutions of the embodiments of this application, the drawings used in the description of the embodiments of this application will be briefly introduced below. Obviously, the drawings described below are only some drawings of this application. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.

[0030] Figure 1 This is a flowchart of a temperature control method according to an embodiment of this application.

[0031] Figure 2 This is a flowchart illustrating the steps of another temperature control method according to an embodiment of this application.

[0032] Figure 3 This is a structural block diagram of a temperature control device according to an embodiment of this application.

[0033] Figure 4 This is a schematic diagram of the structure of an electronic device according to an embodiment of this application. Detailed Implementation

[0034] The technical solutions in the embodiments of this application will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only a part of the embodiments of this application, and not all of the embodiments of this application. Based on the embodiments of this application, all other embodiments obtained by those of ordinary skill in the art without creative effort are within the scope of protection of this application.

[0035] The embodiments of this application can be applied to CZ (direct pull) method, RCZ (multiple charge pull) method, and CCZ (continuous pull) method.

[0036] Reference Figure 1 The diagram shows a flowchart of a temperature control method according to an embodiment of this application.

[0037] like Figure 1 As shown, the temperature control method may include the following steps:

[0038] Step 101: During the monocrystalline silicon growth process, obtain the average pulling speed and the first adjustment amount of the monocrystalline silicon.

[0039] The temperature control method in this application embodiment can be applied to any step in the single crystal silicon growth process, including but not limited to: the crystal pulling step, the shoulder forming step, the shoulder turning step, and the constant diameter step.

[0040] Furthermore, considering that the breakage rate is usually high in the shoulder-forming and equal-diameter steps, resulting in significant waste of time in the single crystal furnace, temperature control methods can be applied to the shoulder-forming and / or equal-diameter steps in the single crystal silicon growth process to reduce the breakage rate to a greater extent.

[0041] During the growth of monocrystalline silicon, there are two growth directions: lateral and longitudinal. Lateral growth is characterized by the continuous increase in the diameter of the monocrystalline silicon, while longitudinal growth generates a longitudinal upward pulling speed (i.e., longitudinal growth rate), which changes continuously with the growth rate of the monocrystalline silicon.

[0042] The average pulling speed of monocrystalline silicon reflects the temperature of the thermal field; a higher average pulling speed indicates a lower thermal field temperature. Therefore, the thermal field temperature can be controlled based on the average pulling speed of monocrystalline silicon.

[0043] In one alternative implementation, the average pulling speed of monocrystalline silicon can be monitored in real time by a monocrystalline furnace control system, for example, by acquiring the average pulling speed within a preset time interval. Therefore, in this embodiment, the average pulling speed of monocrystalline silicon can be read from the monocrystalline furnace control system.

[0044] The average pulling speed of monocrystalline silicon varies, resulting in different adjustments to the crucible rotation speed. Therefore, the initial adjustment to the crucible rotation speed can be calculated based on the average pulling speed of the monocrystalline silicon.

[0045] In one alternative implementation, the process of obtaining the first adjustment amount may include the following steps a1 to a2:

[0046] Step a1: Calculate the first difference between the preset target lifting speed and the average lifting speed.

[0047] A target pulling speed is preset, which is used to measure whether the average pulling speed of monocrystalline silicon is too high or too low. In practical applications, the specific value of the target pulling speed can be set according to actual experience, and this embodiment does not impose any restrictions on this. Illustratively, the target pulling speed can be 45mm / h, 50mm / h, 55mm / h, etc.

[0048] Calculate the first difference between the target lifting speed and the average lifting speed. Illustratively, the first difference between the target lifting speed and the average lifting speed can be the difference between the target lifting speed and the average lifting speed, or the absolute value of the difference between the target lifting speed and the average lifting speed.

[0049] For example, if the average pulling speed of monocrystalline silicon is V0 and the target pulling speed is V, then the first difference between the target pulling speed and the average pulling speed is H1 = V - V0, or H1 = |V - V0|.

[0050] Step a2: The product of the first difference and the preset first coefficient is used as the first adjustment amount.

[0051] The difference between the target lifting speed and the average lifting speed will result in different adjustments to the crucible rotation speed. A larger difference indicates a greater difference between the average and target lifting speeds, requiring a larger initial adjustment; conversely, a smaller difference indicates a smaller difference, requiring a smaller initial adjustment. Therefore, there is a positive correlation between the initial adjustment and the initial difference.

[0052] The first coefficient represents the relationship between the average lifting speed and the crucible rotation speed. Therefore, the product of the first difference and the first coefficient can be used as the first adjustment amount.

[0053] For example, if the first difference is H1 and the first coefficient is p, then the first adjustment amount M1 = H1 × p.

[0054] In practical applications, the specific value of the first coefficient can be set based on actual experience; this embodiment does not impose any restrictions on this. For illustrative purposes, the first coefficient can be any value between 0.01 and 1.

[0055] In one alternative implementation, temperature control can be performed according to a preset adjustment cycle. Therefore, in step 101, the average pulling speed and the first adjustment amount of the monocrystalline silicon can be obtained according to the preset adjustment cycle.

[0056] In this case, the average pulling speed of monocrystalline silicon can be the latest average pulling speed monitored by the monocrystalline furnace control system when read from the monocrystalline furnace control system, or it can be the average of all average pulling speeds monitored by the monocrystalline furnace control system within the current adjustment cycle.

[0057] In practical applications, the specific value of the adjustment period can be set based on actual experience; this embodiment does not impose any restrictions on this. For illustrative purposes, the adjustment period can be 1 second, 2 seconds, 3 seconds, etc.

[0058] Step 102: Compare the average lifting speed with the preset target lifting speed. If the average lifting speed is greater than the target lifting speed, proceed to step 103; if the average lifting speed is less than the target lifting speed, proceed to step 104.

[0059] Step 103: In response to the average lifting speed being greater than the preset target lifting speed, the crucible rotation speed is reduced according to the first adjustment amount to increase the temperature of the thermal field.

[0060] If the average pulling speed is greater than the target pulling speed, it means that the current average pulling speed is too fast, resulting in a low current thermal zone temperature. Therefore, the thermal zone temperature needs to be increased. Thus, the crucible rotation speed can be reduced according to the first adjustment amount to reduce the convection of the silicon liquid, thereby increasing the thermal conduction rate of the silicon liquid and thus increasing the thermal zone temperature.

[0061] Indicative of the situation where the average lifting speed is greater than the target lifting speed:

[0062] If the first difference between the target lifting speed and the average lifting speed is the difference between the target lifting speed and the average lifting speed, then the first difference is negative, and the first adjustment amount is also negative. Therefore, the process of reducing the crucible speed according to the first adjustment amount can include adding the first adjustment amount to the current actual crucible speed.

[0063] If the first difference between the target lifting speed and the average lifting speed is the absolute value of the difference between the target lifting speed and the average lifting speed, then when the average lifting speed is greater than the target lifting speed, the first difference is positive, and the first adjustment amount is also positive. Therefore, the process of reducing the crucible speed according to the first adjustment amount can include: subtracting the first adjustment amount from the current actual crucible speed.

[0064] In one optional implementation, if temperature control is performed according to a preset adjustment cycle, a single adjustment threshold can be preset. In this case, the process of reducing the crucible rotation speed according to the first adjustment amount may include: reducing the crucible rotation speed according to the first adjustment amount based on the principle that the adjustment amount in a single cycle does not exceed the preset single adjustment threshold. This method can control the adjustment amount in a single cycle within a certain range, thereby avoiding excessive fluctuations in the thermal field temperature caused by an excessively large adjustment amount in a single cycle.

[0065] Specifically, the first adjustment amount and the single adjustment amount threshold are compared; if the first adjustment amount is greater than the single adjustment amount threshold, the crucible speed is reduced according to the single adjustment amount threshold; if the first adjustment amount is less than or equal to the single adjustment amount threshold, the crucible speed is reduced according to the first adjustment amount.

[0066] In another alternative implementation, if temperature control is performed according to a preset adjustment cycle, a cumulative adjustment threshold can be preset. In this case, the process of reducing the crucible rotation speed according to the first adjustment amount can include: reducing the crucible rotation speed according to the first adjustment amount based on the principle that the cumulative adjustment amount does not exceed the preset cumulative adjustment threshold. This method can control the cumulative adjustment amount within a certain range, thereby avoiding excessive fluctuations in the thermal field temperature caused by an excessively large cumulative adjustment amount.

[0067] Specifically, the cumulative adjustment amount is calculated based on the adjustment amount in each adjustment period before the current adjustment period and the first adjustment amount; if the cumulative adjustment amount is greater than the cumulative adjustment amount threshold, the crucible rotation speed is reduced by the difference between the cumulative adjustment amount and the cumulative adjustment amount threshold; if the cumulative adjustment amount is less than or equal to the cumulative adjustment amount threshold, the crucible rotation speed is reduced by the first adjustment amount.

[0068] In another optional implementation, if temperature control is performed according to a preset adjustment cycle, a single adjustment threshold and a cumulative adjustment threshold can be preset. In this case, the process of reducing the crucible rotation speed according to the first adjustment amount can include: reducing the crucible rotation speed according to the first adjustment amount based on the principle that the single-cycle adjustment amount does not exceed the preset single-cycle adjustment threshold and the cumulative adjustment amount does not exceed the preset cumulative adjustment threshold. This method can control both the single-cycle adjustment amount and the cumulative adjustment amount within a certain range, thereby controlling the fluctuation range of the thermal field temperature.

[0069] Specifically, the first adjustment amount and the single adjustment amount threshold are compared; if the first adjustment amount is greater than the single adjustment amount threshold, the cumulative adjustment amount is calculated based on the adjustment amounts in each adjustment period before the current adjustment period and the single adjustment amount threshold; if the first adjustment amount is less than or equal to the single adjustment amount threshold, the cumulative adjustment amount is calculated based on the adjustment amounts in each adjustment period before the current adjustment period and the first adjustment amount; if the cumulative adjustment amount is greater than the cumulative adjustment amount threshold, the crucible rotation speed is reduced by the difference between the cumulative adjustment amount and the cumulative adjustment amount threshold; if the cumulative adjustment amount is less than or equal to the cumulative adjustment amount threshold, the crucible rotation speed is reduced by the first adjustment amount.

[0070] In practical applications, the specific values ​​of the above-mentioned single adjustment threshold and cumulative adjustment threshold can be set according to actual experience. This embodiment does not impose any restrictions on this.

[0071] Step 104: In response to the average lifting speed being less than the target lifting speed, increase the crucible rotation speed by the first adjustment amount to reduce the thermal field temperature.

[0072] If the average pulling speed is less than the target pulling speed, it means that the current average pulling speed is too slow, resulting in a high current thermal field temperature. Therefore, the thermal field temperature needs to be reduced. Thus, the crucible rotation speed can be increased according to the first adjustment amount to increase the convection of the silicon liquid, thereby reducing the thermal conduction rate of the silicon liquid and thus reducing the thermal field temperature.

[0073] Schematic illustration: When the average lifting speed is less than the target lifting speed, if the first difference between the target lifting speed and the average lifting speed is the difference between the target lifting speed and the average lifting speed, then the first difference is positive, and the first adjustment amount is also positive. If the first difference between the target lifting speed and the average lifting speed is the absolute value of the difference between the target lifting speed and the average lifting speed, then the first difference is positive, and the first adjustment amount is also positive. Therefore, the process of increasing the crucible rotation speed according to the first adjustment amount can include adding the first adjustment amount to the current actual crucible rotation speed.

[0074] In one alternative implementation, if temperature control is performed according to a preset adjustment cycle, a single adjustment amount threshold can be preset. In this case, the process of increasing the crucible rotation speed according to the first adjustment amount may include: increasing the crucible rotation speed according to the first adjustment amount based on the principle that the adjustment amount in a single cycle does not exceed the preset single adjustment amount threshold.

[0075] Specifically, the first adjustment amount and the single adjustment amount threshold are compared; if the first adjustment amount is greater than the single adjustment amount threshold, the crucible rotation speed is increased according to the single adjustment amount threshold; if the first adjustment amount is less than or equal to the single adjustment amount threshold, the crucible rotation speed is increased according to the first adjustment amount.

[0076] In another alternative implementation, if temperature control is performed according to a preset adjustment cycle, a cumulative adjustment threshold can be preset. In this case, the process of increasing the crucible rotation speed according to the first adjustment amount may include: increasing the crucible rotation speed according to the first adjustment amount based on the principle that the cumulative adjustment amount does not exceed the preset cumulative adjustment threshold.

[0077] Specifically, the cumulative adjustment amount is calculated based on the adjustment amount in each adjustment period before the current adjustment period and the first adjustment amount; if the cumulative adjustment amount is greater than the cumulative adjustment amount threshold, the crucible rotation speed is increased by the difference between the cumulative adjustment amount and the cumulative adjustment amount threshold; if the cumulative adjustment amount is less than or equal to the cumulative adjustment amount threshold, the crucible rotation speed is increased by the first adjustment amount.

[0078] In another alternative implementation, if temperature control is performed according to a preset adjustment cycle, a single adjustment threshold and a cumulative adjustment threshold can be preset. In this case, the process of increasing the crucible rotation speed according to the first adjustment amount may include: increasing the crucible rotation speed according to the first adjustment amount based on the principle that the adjustment amount in a single cycle does not exceed the preset single adjustment threshold and the cumulative adjustment amount does not exceed the preset cumulative adjustment threshold.

[0079] Specifically, the first adjustment amount and the single adjustment amount threshold are compared; if the first adjustment amount is greater than the single adjustment amount threshold, the cumulative adjustment amount is calculated based on the adjustment amounts in each adjustment period before the current adjustment period and the single adjustment amount threshold; if the first adjustment amount is less than or equal to the single adjustment amount threshold, the cumulative adjustment amount is calculated based on the adjustment amounts in each adjustment period before the current adjustment period and the first adjustment amount; if the cumulative adjustment amount is greater than the cumulative adjustment amount threshold, the crucible rotation speed is increased by the difference between the cumulative adjustment amount and the cumulative adjustment amount threshold; if the cumulative adjustment amount is less than or equal to the cumulative adjustment amount threshold, the crucible rotation speed is increased by the first adjustment amount.

[0080] If the average lifting speed is equal to the target lifting speed, there is no need to adjust the crucible rotation speed.

[0081] In this embodiment, on the one hand, considering that changes in crucible rotation speed can cause changes in silicon molten convection, which in turn can cause changes in the silicon molten heat conduction rate, and these changes can lead to changes in the thermal field temperature, specifically, a smaller crucible rotation speed results in less silicon molten convection, a larger silicon molten heat conduction rate, and a higher thermal field temperature. Therefore, the thermal field temperature can be indirectly controlled by controlling the crucible rotation speed. On the other hand, the trend of thermal field temperature change is measured by the average pulling speed of the single-crystal silicon. If the average pulling speed is greater than the target pulling speed, it indicates that the current average pulling speed is too fast, resulting in a lower current thermal field temperature, which needs to be increased. Therefore, the thermal field temperature can be increased by decreasing the crucible rotation speed. If the average pulling speed is less than the target pulling speed, it indicates that the current average pulling speed is too slow, resulting in a higher current thermal field temperature, which needs to be decreased. Therefore, the thermal field temperature can be increased by increasing the crucible rotation speed. By adjusting the crucible rotation speed, the thermal field temperature can be adjusted more quickly and accurately, achieving instantaneous control of the thermal field temperature, greatly shortening the control cycle of the thermal field temperature, and reducing the fluctuation range of the thermal field temperature.

[0082] Reference Figure 2 The diagram shows a schematic flowchart of a temperature control method according to an embodiment of this application.

[0083] like Figure 2 As shown, the temperature control method may include the following steps:

[0084] Step 201: During the monocrystalline silicon growth process, obtain the average pulling speed and the first adjustment amount of the monocrystalline silicon.

[0085] In this embodiment, the first difference between the target lifting speed and the average lifting speed is the absolute value of the difference between the target lifting speed and the average lifting speed.

[0086] Step 202: Obtain the pulling speed change rate and the second adjustment amount of the single crystal silicon.

[0087] The rate of change of the pulling speed of monocrystalline silicon reflects the rate of change of the thermal field temperature; a larger rate of change indicates a larger rate of change of the thermal field temperature. Therefore, the thermal field temperature can be controlled based on the rate of change of the pulling speed of monocrystalline silicon, thereby further improving the accuracy of thermal field temperature control.

[0088] In one alternative implementation, multiple average pulling speeds within a recent preset time period can be read from the single crystal furnace control system. Based on this preset time period and the read multiple average pulling speeds, the rate of change of pulling speed can be calculated. For example, if the preset time period is t and the average pulling speed is V0, then the rate of change of pulling speed a = dV0 / dt.

[0089] Different rates of change in the pulling speed of monocrystalline silicon will result in different adjustments to the crucible rotation speed. Therefore, a second adjustment to the crucible rotation speed can be calculated based on the rate of change in the pulling speed of monocrystalline silicon.

[0090] In one alternative implementation, the process of obtaining the first adjustment amount may include the following steps b1 to b2:

[0091] Step b1: Calculate the second difference between the preset target rate of change and the rate of change of the lifting speed.

[0092] A target rate of change is preset, which measures whether the rate of change in the pulling speed of monocrystalline silicon is too large or too small. In practical applications, the specific value of the target rate of change can be set based on actual experience; this embodiment does not impose any restrictions on this. For illustrative purposes, the target rate of change can be 0.4, 0.5, 0.6, etc.

[0093] Calculate the second difference between the target rate of change and the rate of change of the lifting speed. In this embodiment, the second difference between the target rate of change and the rate of change of the lifting speed is the absolute value of the difference between the target rate of change and the rate of change of the lifting speed. For example, if the rate of change of the lifting speed is 'a' and the target lifting speed is 'A', then the second difference between the target rate of change and the rate of change of the lifting speed is H2 = |Aa|.

[0094] Step b2: The product of the second difference and the preset second coefficient is used as the second adjustment amount.

[0095] Different second differences between the target rate of change and the rate of change of the lifting speed will result in different adjustments to the crucible rotation speed. A larger second difference indicates a faster rate of change in the thermal field temperature, and correspondingly, a larger second adjustment should be made; a smaller second difference indicates a slower rate of change in the thermal field temperature, and correspondingly, a smaller second adjustment should be made. Therefore, there is a positive correlation between the second adjustment and the second difference.

[0096] The second coefficient represents the relationship between the rate of change of the lifting speed and the crucible rotation speed. Therefore, the product of the second difference and the second coefficient can be used as the second adjustment amount.

[0097] For example, if the second difference is H2 and the second coefficient is D, then the second adjustment amount M2 = H2 × D.

[0098] In practical applications, the specific value of the second coefficient can be set based on actual experience; this embodiment does not impose any restrictions on this. For illustrative purposes, the second coefficient can be any value between 1 and 60.

[0099] Corresponding to the above embodiment, temperature control can be performed according to a preset adjustment cycle. Therefore, in step 202, the rate of change of the pulling speed of monocrystalline silicon and the second adjustment amount can be obtained according to the preset adjustment cycle. In this case, the rate of change of the pulling speed of monocrystalline silicon can be the rate of change of the average pulling speed monitored by the monocrystalline furnace control system within the current adjustment cycle.

[0100] It is understood that this embodiment does not limit the execution order of steps 201 and 202.

[0101] Step 203: Compare the average lifting speed with the preset target lifting speed. If the average lifting speed is greater than the target lifting speed, proceed to step 204; if the average lifting speed is less than the target lifting speed, proceed to step 207.

[0102] Step 204: In response to the average lifting speed being greater than a preset target lifting speed, compare the rate of change of the lifting speed with the preset target rate of change. If the rate of change of the lifting speed is greater than the target rate of change, proceed to step 205; if the rate of change of the lifting speed is less than the target rate of change, proceed to step 206.

[0103] If the average lifting speed is greater than the target lifting speed, the crucible rotation speed needs to be reduced. In this case, if the rate of change of the lifting speed equals the target rate of change, the crucible rotation speed is reduced by the first adjustment amount.

[0104] Step 205: In response to the lifting speed change rate being greater than the preset target change rate, the crucible rotation speed is reduced according to the difference between the first adjustment amount and the second adjustment amount.

[0105] If the average pulling speed is greater than the target pulling speed, the crucible rotation speed needs to be reduced. In this case, if the rate of change of the pulling speed is greater than the target rate of change, it indicates that the current rate of change of the thermal field temperature is too fast, and the adjustment amount of the crucible rotation speed needs to be reduced to slow down the rate of change of the thermal field temperature. Therefore, the crucible rotation speed can be reduced according to the difference between the first adjustment amount and the second adjustment amount.

[0106] Schematic illustration: If the first difference between the target lifting speed and the average lifting speed is the absolute value of the difference between the target lifting speed and the average lifting speed, then the first difference is positive, and the first adjustment amount is also positive. If the second difference between the target rate of change and the rate of change of lifting speed is the absolute value of the difference between the target rate of change and the rate of change of lifting speed, then the second difference is positive, and the second adjustment amount is also positive. Therefore, the difference between the first adjustment amount and the second adjustment amount is also positive. Thus, the process of reducing the crucible rotation speed according to the difference between the first and second adjustment amounts can include: subtracting the difference between the first and second adjustment amounts from the current actual crucible rotation speed.

[0107] Similar to step 103 above, in step 205, the crucible rotation speed can also be reduced according to the difference between the first adjustment amount and the second adjustment amount, based on the principle that the adjustment amount in a single cycle does not exceed a preset single adjustment amount threshold, and / or the principle that the total cumulative adjustment amount does not exceed a preset total cumulative adjustment amount threshold. The specific process can be referred to the relevant description above, and will not be discussed in detail here.

[0108] Step 206: In response to the fact that the rate of change of the lifting speed is less than the target rate of change, the crucible rotation speed is reduced by the sum of the first adjustment amount and the second adjustment amount.

[0109] If the average pulling speed is greater than the target pulling speed, the crucible rotation speed needs to be reduced. In this case, if the rate of change of the pulling speed is less than the target rate of change, it indicates that the current rate of change of the thermal field temperature is slow, and the adjustment amount of the crucible rotation speed needs to be increased to reduce the rate of change of the thermal field temperature. Therefore, the crucible rotation speed can be reduced by the sum of the first adjustment amount and the second adjustment amount.

[0110] Schematic illustration: If the first difference between the target lifting speed and the average lifting speed is the absolute value of the difference between the target lifting speed and the average lifting speed, then the first difference is positive, and the first adjustment amount is also positive. If the second difference between the target rate of change and the rate of change of lifting speed is the absolute value of the difference between the target rate of change and the rate of change of lifting speed, then the second difference is positive, and the second adjustment amount is also positive. Therefore, the sum of the first adjustment amount and the second adjustment amount is also positive. Thus, the process of reducing the crucible rotation speed according to the difference between the first and second adjustment amounts can include: subtracting the sum of the first and second adjustment amounts from the current actual crucible rotation speed.

[0111] Similar to step 103 above, in step 206, the crucible rotation speed can also be reduced according to the sum of the first adjustment amount and the second adjustment amount, based on the principle that the adjustment amount in a single cycle does not exceed a preset single adjustment amount threshold, and / or the principle that the total cumulative adjustment amount does not exceed a preset total cumulative adjustment amount threshold. The specific process can be referred to the relevant description above, and will not be discussed in detail here.

[0112] Step 207: In response to the average lifting speed being less than a preset target lifting speed, compare the rate of change of the lifting speed with the preset target rate of change. If the rate of change of the lifting speed is greater than the target rate of change, proceed to step 208; if the rate of change of the lifting speed is less than the target rate of change, proceed to step 209.

[0113] If the average lifting speed is less than the target lifting speed, the crucible rotation speed needs to be increased. In this case, if the rate of change of the lifting speed equals the target rate of change, the crucible rotation speed is increased by the first adjustment amount.

[0114] Step 208: In response to the fact that the rate of change of the lifting speed is greater than the target rate of change, the crucible rotation speed is increased according to the difference between the first adjustment amount and the second adjustment amount.

[0115] If the average pulling speed is less than the target pulling speed, the crucible rotation speed needs to be increased. In this case, if the rate of change of the pulling speed is greater than the target rate of change, it indicates that the current rate of change of the thermal field temperature is too fast, and the adjustment amount of the crucible rotation speed needs to be reduced to slow down the rate of change of the thermal field temperature. Therefore, the crucible rotation speed can be increased according to the difference between the first adjustment amount and the second adjustment amount.

[0116] Schematic illustration: If the first difference between the target lifting speed and the average lifting speed is the absolute value of the difference between the target lifting speed and the average lifting speed, then the first difference is positive, and the first adjustment amount is also positive. If the second difference between the target rate of change and the rate of change of lifting speed is the absolute value of the difference between the target rate of change and the rate of change of lifting speed, then the second difference is positive, and the second adjustment amount is also positive. Therefore, the difference between the first adjustment amount and the second adjustment amount is also positive. Thus, the process of increasing the crucible rotation speed according to the difference between the first and second adjustment amounts can include adding the difference between the first and second adjustment amounts to the current actual crucible rotation speed.

[0117] Similar to step 104 above, in step 208, the crucible rotation speed can also be increased according to the difference between the first adjustment amount and the second adjustment amount, based on the principle that the adjustment amount in a single cycle does not exceed a preset single adjustment amount threshold, and / or the principle that the total cumulative adjustment amount does not exceed a preset total cumulative adjustment amount threshold. The specific process can be referred to the relevant description above, and will not be discussed in detail here.

[0118] Step 209: In response to the fact that the rate of change of the lifting speed is less than the target rate of change, the crucible rotation speed is increased by the sum of the first adjustment amount and the second adjustment amount.

[0119] If the average pulling speed is less than the target pulling speed, the crucible rotation speed needs to be increased. In this case, if the rate of change of the pulling speed is less than the target rate of change, it indicates that the current rate of change of the thermal field temperature is slow, and the crucible rotation speed adjustment needs to be increased to reduce the rate of change of the thermal field temperature. Therefore, the crucible rotation speed can be increased by the sum of the first adjustment amount and the second adjustment amount.

[0120] Schematic illustration: If the first difference between the target lifting speed and the average lifting speed is the absolute value of the difference between the target lifting speed and the average lifting speed, then the first difference is positive, and the first adjustment amount is also positive. If the second difference between the target rate of change and the rate of change of lifting speed is the absolute value of the difference between the target rate of change and the rate of change of lifting speed, then the second difference is positive, and the second adjustment amount is also positive. Therefore, the sum of the first adjustment amount and the second adjustment amount is also positive. Thus, the process of increasing the crucible rotation speed according to the difference between the first and second adjustment amounts can include adding the sum of the first and second adjustment amounts to the current actual crucible rotation speed.

[0121] Similar to step 104 above, in step 209, the crucible rotation speed can also be increased according to the sum of the first adjustment amount and the second adjustment amount, based on the principle that the adjustment amount in a single cycle does not exceed a preset single adjustment amount threshold, and / or the principle that the total cumulative adjustment amount does not exceed a preset total cumulative adjustment amount threshold. The specific process can be referred to the relevant description above, and will not be discussed in detail here.

[0122] Reference Figure 3 The diagram shows a structural block diagram of a temperature control device according to an embodiment of this application.

[0123] like Figure 3 As shown, the temperature control device may include the following modules:

[0124] The first acquisition module 301 is used to acquire the average pulling speed and the first adjustment amount of the single crystal silicon during the growth process of the single crystal silicon.

[0125] The first adjustment module 302 is used to reduce the crucible rotation speed according to the first adjustment amount in response to the average lifting speed being greater than the preset target lifting speed, so as to increase the temperature of the hot zone.

[0126] The second adjustment module 303 is used to increase the crucible rotation speed according to the first adjustment amount in response to the average lifting speed being less than the target lifting speed, so as to reduce the temperature of the hot zone.

[0127] Optionally, the first acquisition module 301 includes: a first calculation unit, used to calculate a first difference between the target lifting speed and the average lifting speed; and a second calculation unit, used to multiply the first difference by a preset first coefficient as the first adjustment amount; the first coefficient represents the correspondence between the average lifting speed and the crucible rotation speed.

[0128] Optionally, the device further includes: a second acquisition module, configured to acquire the pulling speed change rate and a second adjustment amount of the monocrystalline silicon; a first adjustment module 302, specifically configured to, in response to the pulling speed change rate being greater than a preset target change rate, decrease the crucible rotation speed according to the difference between the first adjustment amount and the second adjustment amount; and in response to the pulling speed change rate being less than the target change rate, decrease the crucible rotation speed according to the sum of the first adjustment amount and the second adjustment amount; and a second adjustment module 303, specifically configured to, in response to the pulling speed change rate being greater than the target change rate, increase the crucible rotation speed according to the difference between the first adjustment amount and the second adjustment amount; and in response to the pulling speed change rate being less than the target change rate, increase the crucible rotation speed according to the sum of the first adjustment amount and the second adjustment amount.

[0129] Optionally, the second acquisition module includes: a third calculation unit for calculating a second difference between the target rate of change and the rate of change of the lifting speed; and a fourth calculation unit for multiplying the second difference by a preset second coefficient as the second adjustment amount; the second coefficient represents the correspondence between the rate of change of the lifting speed and the crucible rotation speed.

[0130] Optionally, the first acquisition module 301 is specifically used to acquire the average pulling speed and the first adjustment amount of the monocrystalline silicon according to a preset adjustment cycle; the first adjustment module 302 is specifically used to reduce the crucible rotation speed according to the first adjustment amount based on the principle that the adjustment amount in a single cycle does not exceed a preset single adjustment amount threshold, and / or the principle that the cumulative adjustment amount does not exceed a preset cumulative adjustment amount threshold; the second adjustment module 303 is specifically used to increase the crucible rotation speed according to the first adjustment amount based on the principle that the adjustment amount in a single cycle does not exceed a preset single adjustment amount threshold, and / or the principle that the cumulative adjustment amount does not exceed a preset cumulative adjustment amount threshold.

[0131] Optionally, the second acquisition module is specifically used to acquire the pulling speed change rate and the second adjustment amount of the monocrystalline silicon according to a preset adjustment cycle; the first adjustment module 302 is specifically used to, in response to the pulling speed change rate being greater than a preset target change rate, reduce the crucible rotation speed according to the difference between the first adjustment amount and the second adjustment amount, based on the principle that the adjustment amount in a single cycle does not exceed a preset single adjustment amount threshold, and / or, the cumulative adjustment amount does not exceed a preset cumulative adjustment amount threshold; and in response to the pulling speed change rate being less than the target change rate, reduce the crucible rotation speed according to the principle that the adjustment amount in a single cycle does not exceed a preset single adjustment amount threshold, and / or, the cumulative adjustment amount does not exceed a preset cumulative adjustment amount threshold. The sum of the first adjustment amount and the second adjustment amount decreases the crucible rotation speed; the second adjustment module 303 is specifically used to increase the crucible rotation speed according to the difference between the first adjustment amount and the second adjustment amount in response to the lifting speed change rate being greater than the target change rate, based on the principle that the adjustment amount in a single cycle does not exceed a preset single adjustment amount threshold, and / or the principle that the cumulative adjustment amount does not exceed a preset cumulative adjustment amount threshold; and to increase the crucible rotation speed according to the sum of the first adjustment amount and the second adjustment amount in response to the lifting speed change rate being less than the target change rate, based on the principle that the adjustment amount in a single cycle does not exceed a preset single adjustment amount threshold, and / or the principle that the cumulative adjustment amount does not exceed a preset cumulative adjustment amount threshold.

[0132] Optionally, the single-crystal silicon growth process includes a shoulder-forming step and / or a constant-diameter step.

[0133] In this embodiment, on the one hand, considering that changes in crucible rotation speed can cause changes in silicon molten convection, which in turn can cause changes in the silicon molten heat conduction rate, and these changes can lead to changes in the thermal field temperature, specifically, a smaller crucible rotation speed results in less silicon molten convection, a larger silicon molten heat conduction rate, and a higher thermal field temperature. Therefore, the thermal field temperature can be indirectly controlled by controlling the crucible rotation speed. On the other hand, the trend of thermal field temperature change is measured by the average pulling speed of the single-crystal silicon. If the average pulling speed is greater than the target pulling speed, it indicates that the current average pulling speed is too fast, resulting in a lower current thermal field temperature, which needs to be increased. Therefore, the thermal field temperature can be increased by decreasing the crucible rotation speed. If the average pulling speed is less than the target pulling speed, it indicates that the current average pulling speed is too slow, resulting in a higher current thermal field temperature, which needs to be decreased. Therefore, the thermal field temperature can be increased by increasing the crucible rotation speed. By adjusting the crucible rotation speed, the thermal field temperature can be adjusted more quickly and accurately, achieving instantaneous control of the thermal field temperature, greatly shortening the control cycle of the thermal field temperature, and reducing the fluctuation range of the thermal field temperature.

[0134] As the device embodiment is basically similar to the method embodiment, the description is relatively simple, and relevant parts can be found in the description of the method embodiment.

[0135] In embodiments of this application, an electronic device is also provided. This electronic device may include one or more processors and one or more computer-readable storage media storing instructions thereon, such as an application program. When the instructions are executed by the one or more processors, the processors cause the processors to perform the temperature control method of any of the above embodiments.

[0136] Reference Figure 4 The diagram illustrates a schematic representation of an electronic device structure according to an embodiment of this application. Figure 4 As shown, the electronic device includes a processor 401, a communication interface 402, a memory 403, and a communication bus 404. The processor 401, communication interface 402, and memory 403 communicate with each other via the communication bus 404.

[0137] Memory 403 is used to store computer programs.

[0138] The processor 401, when executing the program stored in the memory 403, implements the temperature control method of any of the above embodiments.

[0139] Communication interface 402 is used for communication between the above-mentioned electronic device and other devices.

[0140] The aforementioned communication bus 404 can be a Peripheral Component Interconnect (PCI) bus or an Extended Industry Standard Architecture (EISA) bus, etc. This communication bus can be divided into address bus, data bus, control bus, etc. For ease of illustration, it is represented by only one thick line in the diagram, but this does not indicate that there is only one bus or one type of bus.

[0141] The processor 401 mentioned above may include, but is not limited to: a central processing unit (CPU), a network processor (NP), a digital signal processor (DSP), an application-specific integrated circuit (ASIC), a field-programmable gate array (FPGA), or other programmable logic devices, discrete gate or transistor logic devices, discrete hardware components, etc.

[0142] The aforementioned memory 403 may include, but is not limited to: Read Only Memory (ROM), Random Access Memory (RAM), Compact Disc Read Only Memory (CD-ROM), Electronic Erasable Programmable Read Only Memory (EEPROM), Hard Disk, Floppy Disk, Flash Memory, etc.

[0143] In embodiments of this application, a computer-readable storage medium is also provided, on which a computer program is stored, which can be executed by a processor of an electronic device, and when the computer program is executed by the processor, causes the processor to perform the temperature control method as described in any of the above embodiments.

[0144] The various embodiments in this specification are related to each other and are described in a progressive manner. Each embodiment focuses on the differences from other embodiments, and the same or similar parts between the embodiments can be referred to each other.

[0145] It should be noted that, in this document, relational terms such as "first" and "second" are used merely to distinguish one entity or operation from another, and do not necessarily require or imply any such actual relationship or order between these entities or operations. Furthermore, the terms "comprising," "including," or any other variations thereof are intended to cover non-exclusive inclusion, such that a process, method, article, or terminal device that comprises a list of elements includes not only those elements but also other elements not expressly listed, or elements inherent to such a process, method, article, or terminal device. Without further limitations, an element defined by the phrase "comprising one..." does not exclude the presence of other identical elements in the process, method, article, or terminal device that includes said element.

[0146] Through the above description of the embodiments, those skilled in the art can clearly understand that the methods of the above embodiments can be implemented by means of software plus necessary general-purpose hardware platforms. Of course, they can also be implemented by hardware, but in many cases the former is a better implementation method. Based on this understanding, the technical solution of this application, in essence, or the part that contributes to the prior art, can be embodied in the form of a software product. This computer software product is stored in a storage medium (such as ROM, RAM, magnetic disk, optical disk), and includes several instructions to cause a terminal (which may be a mobile phone, computer, server, air conditioner, or network device, etc.) to execute the methods described in the various embodiments of this application.

[0147] The embodiments of this application have been described above with reference to the accompanying drawings. However, this application is not limited to the specific embodiments described above. The specific embodiments described above are merely illustrative and not restrictive. Those skilled in the art can make many other forms under the guidance of this application without departing from the spirit and scope of the claims, and all of these forms are within the protection scope of this application.

[0148] Those skilled in the art will recognize that the units and algorithm steps of the various examples described in conjunction with the embodiments disclosed in this application can be implemented in electronic hardware, or a combination of computer software and electronic hardware. Whether these functions are implemented in hardware or software depends on the specific application and design constraints of the technical solution. Those skilled in the art can use different methods to implement the described functions for each specific application, but such implementation should not be considered beyond the scope of this application.

[0149] Those skilled in the art will understand that, for the sake of convenience and brevity, the specific working processes of the systems, devices, and units described above can be referred to the corresponding processes in the foregoing method embodiments, and will not be repeated here.

[0150] In the embodiments provided in this application, it should be understood that the disclosed apparatus and methods can be implemented in other ways. For example, the apparatus embodiments described above are merely illustrative. For instance, the division of units is only a logical functional division, and in actual implementation, there may be other division methods. For example, multiple units or components may be combined or integrated into another system, or some features may be ignored or not executed. Furthermore, the coupling or direct coupling or communication connection shown or discussed may be through some interfaces; the indirect coupling or communication connection between apparatuses or units may be electrical, mechanical, or other forms.

[0151] The units described as separate components may or may not be physically separate. The components shown as units may or may not be physical units; that is, they may be located in one place or distributed across multiple network units. Some or all of the units can be selected to achieve the purpose of this embodiment according to actual needs.

[0152] In addition, the functional units in the various embodiments of this application can be integrated into one processing unit, or each unit can exist physically separately, or two or more units can be integrated into one unit.

[0153] If the aforementioned functions are implemented as software functional units and sold or used as independent products, they can be stored in a computer-readable storage medium. Based on this understanding, the technical solution of this application, in essence, or the part that contributes to the prior art, or a portion of the technical solution, can be embodied in the form of a software product. This computer software product is stored in a storage medium and includes several instructions to cause a computer device (which may be a personal computer, server, or network device, etc.) to execute all or part of the steps of the methods described in the various embodiments of this application. The aforementioned storage medium includes various media capable of storing program code, such as USB flash drives, portable hard drives, ROM, RAM, magnetic disks, or optical disks.

[0154] The above description is merely a specific embodiment of this application, but the scope of protection of this application is not limited thereto. Any variations or substitutions that can be easily conceived by those skilled in the art within the scope of the technology disclosed in this application should be included within the scope of protection of this application. In summary, the content of this specification should not be construed as a limitation of this application.

Claims

1. A temperature control method, characterized in that, The method includes: In the shoulder-forming step and / or equal-diameter step of the monocrystalline silicon growth process, the average pulling speed and first adjustment amount of the monocrystalline silicon are obtained; In response to the average lifting speed being greater than the preset target lifting speed, the crucible rotation speed is reduced by the first adjustment amount to increase the thermal field temperature. In response to the average lifting speed being less than the target lifting speed, the crucible rotation speed is increased by the first adjustment amount to reduce the thermal field temperature.

2. The method according to claim 1, characterized in that, Obtaining the first adjustment includes: Calculate the first difference between the target lifting speed and the average lifting speed; The product of the first difference and the preset first coefficient is used as the first adjustment amount; the first coefficient represents the correspondence between the average lifting speed and the crucible rotation speed.

3. The method according to claim 1, characterized in that, The step of obtaining the average pulling speed and the first adjustment amount of the monocrystalline silicon includes: obtaining the average pulling speed and the first adjustment amount of the monocrystalline silicon according to a preset adjustment cycle; The step of reducing the crucible rotation speed according to the first adjustment amount includes: reducing the crucible rotation speed according to the first adjustment amount based on the principle that the adjustment amount in a single cycle does not exceed a preset single adjustment amount threshold, and / or the principle that the total cumulative adjustment does not exceed a preset total cumulative adjustment amount threshold. The step of increasing the crucible rotation speed according to the first adjustment amount includes: increasing the crucible rotation speed according to the first adjustment amount based on the principle that the adjustment amount in a single cycle does not exceed a preset single adjustment amount threshold, and / or the principle that the total cumulative adjustment does not exceed a preset total cumulative adjustment amount threshold.

4. The method according to claim 1, characterized in that, After obtaining the average pulling speed of the monocrystalline silicon, the method further includes: obtaining the pulling speed change rate and a second adjustment amount of the monocrystalline silicon; The step of reducing the crucible rotation speed according to the first adjustment amount includes: in response to the lifting speed change rate being greater than a preset target change rate, reducing the crucible rotation speed according to the difference between the first adjustment amount and the second adjustment amount; in response to the lifting speed change rate being less than the target change rate, reducing the crucible rotation speed according to the sum of the first adjustment amount and the second adjustment amount. The step of increasing the crucible rotation speed according to the first adjustment amount includes: in response to the rate of change of the lifting speed being greater than the target rate of change, increasing the crucible rotation speed according to the difference between the first adjustment amount and the second adjustment amount; and in response to the rate of change of the lifting speed being less than the target rate of change, increasing the crucible rotation speed according to the sum of the first adjustment amount and the second adjustment amount.

5. The method according to claim 4, characterized in that, Obtaining the second adjustment includes: Calculate the second difference between the target rate of change and the rate of change of the lifting speed; The product of the second difference and the preset second coefficient is used as the second adjustment amount; the second coefficient represents the correspondence between the rate of change of the lifting speed and the crucible rotation speed.

6. The method according to claim 4, characterized in that, The step of obtaining the pulling speed change rate and the second adjustment amount of the monocrystalline silicon includes: obtaining the pulling speed change rate and the second adjustment amount of the monocrystalline silicon according to a preset adjustment period. The step of reducing the crucible rotation speed according to the difference between the first adjustment amount and the second adjustment amount includes: reducing the crucible rotation speed according to the difference between the first adjustment amount and the second adjustment amount based on the principle that the adjustment amount in a single cycle does not exceed a preset single adjustment amount threshold, and / or the principle that the total cumulative adjustment does not exceed a preset total cumulative adjustment amount threshold. The step of reducing the crucible rotation speed according to the sum of the first adjustment amount and the second adjustment amount includes: reducing the crucible rotation speed according to the sum of the first adjustment amount and the second adjustment amount based on the principle that the adjustment amount in a single cycle does not exceed a preset single adjustment amount threshold, and / or the principle that the total cumulative adjustment does not exceed a preset total cumulative adjustment threshold. The step of increasing the crucible rotation speed according to the difference between the first adjustment amount and the second adjustment amount includes: increasing the crucible rotation speed according to the difference between the first adjustment amount and the second adjustment amount based on the principle that the adjustment amount in a single cycle does not exceed a preset single adjustment amount threshold, and / or the principle that the total cumulative adjustment does not exceed a preset total cumulative adjustment amount threshold. The step of increasing the crucible rotation speed according to the sum of the first adjustment amount and the second adjustment amount includes: increasing the crucible rotation speed according to the sum of the first adjustment amount and the second adjustment amount based on the principle that the adjustment amount in a single cycle does not exceed a preset single adjustment amount threshold, and / or the principle that the total cumulative adjustment does not exceed a preset total cumulative adjustment threshold.

7. A temperature control device, characterized in that, The device includes: The first acquisition module is used to acquire the average pulling speed and the first adjustment amount of the monocrystalline silicon during the shoulder-forming step and / or the equal-diameter step in the monocrystalline silicon growth process. The first adjustment module is used to reduce the crucible rotation speed according to the first adjustment amount in response to the average lifting speed being greater than the preset target lifting speed, so as to increase the temperature of the hot zone. The second adjustment module is used to increase the crucible rotation speed by the first adjustment amount in response to the average lifting speed being less than the target lifting speed, so as to reduce the temperature of the hot zone.

8. An electronic device, characterized in that, include: One or more processors; and One or more computer-readable storage media on which instructions are stored; When the instruction is executed by the one or more processors, the processors perform the temperature control method as described in any one of claims 1 to 6.

9. A computer-readable storage medium, characterized in that, It stores a computer program that, when executed by a processor, causes the processor to perform the temperature control method as described in any one of claims 1 to 6.

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