Optical phased array radar beam scanning technology and waveguide preparation method

Abstract

The application provides an optical phased array radar beam scanning technology and a waveguide preparation method, and belongs to the field of optical waveguide laser radars.The application uses a doped material as a cladding layer, changes the electrical characteristics of the material by controlling the doping type and doping concentration in the cladding layer, and makes the material into an electrode, the core layer of the optical waveguide adopts an intrinsic layer without doping, a high resistance characteristic of the intrinsic layer is utilized, a sufficient voltage is loaded on the waveguide layer, a sufficient electric field is formed, and the electric-optical effect is utilized to scan the angle of a surface plasmon incident light beam.The optical phased array radar beam scanning technology is used for the surface plasmon incident angle regulation, is beneficial to plasmon wave vector matching and accurate regulation of the incident angle, the optical phased array radar beam scanning technology and the waveguide preparation method for regulating the surface plasmon incident angle are simple, are widely applied, and have important significance for the development of microscopic, sensing and measuring fields.

Description

Technical Field

[0001] This invention designs an optical phased array radar beam scanning technology and waveguide fabrication method, and is applied to the field of optical waveguide lidar. Specifically, it designs an optical phased array radar and an optical waveguide chip. Background Technology

[0002] To achieve wave vector matching and excite surface plasmon waves, it is typically necessary to scan the incident angle of a laser beam within a certain range while maintaining a fixed incident wavelength. By observing the changes in the broad spectrum under plasma wave excitation, the wave vector matching of the surface plasmon system can be determined. The scanning accuracy and range of the laser beam's incident angle significantly determine the precision and reliability of wave vector matching achieved by the surface plasmon system, and also influence the resolution and accuracy of applicable systems, such as sensing and microscopy systems.

[0003] Currently, laser scanning systems typically consist of a laser source, optical components, and a control system, enabling the laser beam to translate within a plane or rotate in space. Based on the characteristics of the interaction between the laser and the working medium, laser scanning systems can be categorized into different types. Refractive scanning systems utilize refraction to control the deflection of the laser beam by changing the direction of light propagation in the medium; they are commonly used in optical microscopes and medical equipment. Reflective scanning systems utilize reflection, using mirrors or prisms to deflect the laser beam; they are widely used in laser printing and lidar. Diffraction scanning systems utilize the diffraction effect of light, controlling the beam's path through gratings or optical diffraction elements to achieve laser beam deflection. Birefringent scanning systems utilize the different propagation speeds of light in a birefringent crystal, adjusting the laser beam's deflection angle by controlling the crystal's electric field. Interferometric scanning systems are based on the laser interference effect, controlling the laser beam's deflection angle and position through interference fringes; they are commonly used in laser interferometers and optical measurement.

[0004] The laser beam scanning systems described above typically require mechanical deflectors or acousto-optic deflectors. Mechanical deflector technology is currently the most mature polarization method. Mechanical deflection technology uses the deflection and polarization of optical elements such as reflection or refraction to change the direction of light. Furthermore, the reflecting optical elements need to be linked with mechanical components to achieve scanning. Mechanical scanning technology has advantages in terms of large scanning range and low light loss. However, due to the presence of mechanical rotating components, the structure is complex and precise, resulting in high cost, slow scanning speed, and limited linear scanning range. Moreover, laser scanning systems usually require precise optical design and highly complex control algorithms. Simultaneously, due to the mechanical components, its scanning range and speed are limited, and the system may experience light energy loss or spot distortion during large-area scanning. Some systems may also face challenges in control and accuracy during high-speed scanning. Therefore, mechanical scanning technology has limitations in performance and scanning range, making it difficult to meet the ever-increasing demands for scanning speed in sensing and microscopy technologies. Furthermore, its application in surface plasmonic incident angle scanning for wave vector matching also presents system control accuracy issues, increasing the difficulty of system debugging to some extent.

[0005] The scanning principle of phased array radar based on optical waveguides with electrically controlled beam scanning is similar to that of microwave phased arrays. The entire system consists of multiple phase modulation units, each with a core and cladding structure composed of doped and intrinsic materials. While effectively confining and coupling the laser beam propagation, the core and cladding, through different doping concentrations, can be considered as electrodes, allowing control of the additional refractive index difference within the modulator. This, in turn, controls the additional phase of the light field at the output end of each phase modulator, achieving beam deflection when a field voltage is applied. Using optical waveguide phased array radar, beam control and sensing can be achieved by coupling different waveguide devices, thus enabling the integration and miniaturization of photonic devices. Because the light is confined to the waveguide core, there are no energy losses or spot distortions introduced by traditional mechanical scanning components. Furthermore, optical phased array radar utilizes optical phase modulation technology to adjust the beam phase at the micrometer scale, achieving high-precision beam control. This gives optical phased array radar extremely high angular and range resolution, enabling it to excel in target detection, tracking, and identification, particularly in high-precision target detection and tracking tasks. In terms of beam scanning accuracy, resolution, and responsivity, the optical elements of optical phased array radar offer high flexibility and rapid response, allowing for quick changes in beam direction and shape to flexibly meet target detection needs in different scenarios. Optical phased array radar also enables multi-beam scanning and multi-task parallel processing, improving the multi-task processing capability of the scanning system. Therefore, addressing the challenges of precise control of surface plasma incident angle scanning technology and the impact of mechanical component transmission on scanning speed, an optical phased array radar based on planar waveguides for controlling the surface plasma incident angle is proposed. This ultimately achieves a high-speed, high-precision beam scanning system with a large deflection range, improving the accuracy of surface plasma incident angle control and scanning, and reducing the overall system control complexity of wave vector matching and plasma wave excitation. Summary of the Invention

[0006] The purpose of this invention is to overcome the shortcomings of the prior art and provide an optical phased array radar beam scanning technology and waveguide fabrication method. It uses composition control technology and material doping degree to form an electrode layer, and applies field voltage through the electrode layer to achieve a high-precision, high-response, and wide-range beam scanning and deflection system.

[0007] To solve the above-mentioned technical problems, the technical solution adopted by the present invention is: an optical phased array radar beam scanning technology and waveguide preparation method, characterized in that the optical phased array radar waveguide preparation method and surface plasma incident angle and beam scanning technology include the following steps: Step a, cut GaAs into 5 cm*5 cm pieces, polish the substrate surface with sandpaper, soak it in deionized water, ethanol, acetone and isopropanol, and then clean it with an ultrasonic machine. Then rinse with flowing deionized water for 1 minute, and dry the substrate with nitrogen and a drying plate to complete the cleaning of the microchip; Step b: Place the prepared GaAs substrate on the substrate holder of the molecular beam epitaxy equipment, preheat the substrate to between 400 ℃ and 500 ℃, and then gradually increase the temperature to between 600 ℃ and 700 ℃; Step c: Use an ion pump to control the gas pressure in the reaction chamber and control the growth rate of the molecular beam epitaxy AlGaAs film. Adjust the flow ratio of Al and Ga source materials to 1:3 to complete the control system parameter settings of the molecular beam epitaxy equipment; Step d: Start the molecular beam epitaxy equipment and use an electron bombardment source to heat the temperature inside the chamber to 900 ℃. Step e) When the doped AlGaAs film, i.e., the phased array radar cladding, grows to the target temperature, molecular beam epitaxy is stopped, and the substrate and the grown AlGaAs film are slowly cooled to room temperature. Step f) The AlGaAs film grown on the GaAs substrate surface is removed, and the AlGaAs film is chemically and mechanically polished. After polishing, the film is cleaned with deionized water and the surface is dried with nitrogen to complete the cladding preparation. Step g) The GaAs substrate with the grown AlGaAs film is placed in the molecular beam epitaxy equipment, and the equipment is preheated to 300 °C. Step h) The dopant source is purified by sputtering to volatilize or remove low-volatility impurities from the dopant source at high temperature, reducing the content of low-volatility impurities in the dopant source to 99.999%. Step i) The temperature inside the molecular beam epitaxy cavity is heated to 600 °C. ℃, control the vacuum level and growth rate, wherein the flow ratio of Al and Ga source materials is adjusted to 2:3, and complete the control system parameter settings of the molecular beam epitaxy equipment; Step j, start the molecular beam epitaxy equipment, when the undoped intrinsic AlGaAs thin film, i.e. the phased array radar core layer, grows to 0℃.At a thickness of 55 μm, after growth, the substrate and the grown undoped intrinsic AlGaAs film were slowly cooled to room temperature and then annealed by heating to 300°C and holding for a period of time. Step k: The waveguides with doped and undoped intrinsic AlGaAs films grown on the substrate were removed, and the undoped intrinsic AlGaAs film was chemically and mechanically polished. The polishing head and polishing pad rotated at 30 r / min, using a silica polishing slurry with a flow rate of 50 ml / min and a polishing pressure of 20. Kpa, finally achieving thin film polishing using deionized water cleaning and nitrogen drying, completing the single-layer fabrication step 1 of the substrate, cladding, and core layer in the phased array radar; repeating steps b to k to complete the fabrication of a cladding and core layer with 10 channels, after which slicing and antireflection coating are applied, and control lines are led out from the electrode layer to connect to the control power supply; step m, placing a self-focusing lens behind the output beam of the multi-wavelength laser, after the output beam illuminates the optical waveguide phased array, applying a field voltage ranging from a minimum of -7.79 V to a maximum of 8.7 V to the optical phased array, controlling the maximum deflection angle of the incident laser beam to 13.6°.

[0008] Preferably, the immersion time in deionized water, ethanol, acetone and isopropanol in step a is 3 minutes, the ultrasonic power is 30 W, and the heating plate temperature is 120 degrees Celsius.

[0009] Preferably, the volume pressure in step c is maintained at 10^-6 to 10^-8 Torr, and the growth rate of the molecular beam epitaxial AlGaAs film is 0.5 Å / s;

[0010] Preferably, the cladding growth thickness in step e is 1.44 μm;

[0011] Preferably, in the polishing method described in step f, the polishing head and polishing pad rotate at 30 r / min, a silica polishing slurry is used, the slurry flow rate is 50 ml / min, and the polishing pressure is 20 kPa.

[0012] Preferably, the vacuum level in step i is 10^-6 Torr, and the growth rate of the molecular beam epitaxy AlGaAs film is 0.2 Å / s.

[0013] Compared with the prior art, the beneficial effects of the present invention are as follows:

[0014] 1. This invention uses optical waveguide phased array radar to achieve surface plasma incident angle control technology, which has high scanning accuracy, wide range of angle scanning performance, and is easy to operate.

[0015] 2. The optical waveguide phased array radar of the present invention has high flexibility and fast response speed, and can quickly change the direction and shape of the beam.

[0016] 3. The overall size of the optical waveguide phased array radar of this invention is better than that of mechanical scanning components, and it can achieve a high degree of optical integration. Attached Figure Description

[0017] Figure 1 The schematic diagram illustrates the growth sequence and schematic diagram of a multilayer optical waveguide phased array radar crystal thin film according to the present invention.

[0018] Figure 2 The schematic diagram illustrates the relationship between the microcontroller control voltage and phase deflection, and the application of field voltage to the phased array radar according to the present invention.

[0019] Figure 3 This schematic diagram illustrates the optical path of the incident angle of the surface plasma in the phased array radar of the present invention.

[0020] Figure 4 The schematic diagram illustrates the fabrication steps and schematic diagram of the multilayer optical waveguide phased array radar of the present invention.

[0021] In the picture:

[0022] 1. GaAs / substrate 2. Doped AlGaAs / cladding

[0023] 3. Undoped AlGaAs / fiber core 4. Optical waveguide phased array radar

[0024] 5. Multi-wavelength laser 6. Microcontroller

[0025] 7. Optical waveguide phased array radar; 8. Multi-wavelength laser.

[0026] 9. Self-focusing lens; 10. Surface plasmon excitation structure Implementation

[0027] The objects and functions of the present invention, as well as the methods for achieving these objects and functions, will be clarified by referring to exemplary embodiments. However, the present invention is not limited to the exemplary embodiments disclosed below; it can be implemented in various forms. The purpose of this specification is merely to help those skilled in the art to comprehensively understand the specific details of the invention.

[0028] In the following description, embodiments of the invention will be illustrated with reference to the accompanying drawings. In the drawings, the same reference numerals represent the same or similar parts, or the same or similar steps.

[0029] This invention designs an optical phased array radar beam scanning technology and waveguide fabrication method with adjustable surface plasmon incident angle, targeting the field of optical waveguide lidar, and specifically designs an optical phased array radar and optical waveguide chip. This optical phased array radar waveguide features small size and integration with optical waveguide devices. Compared with existing mechanical scanning techniques for adjusting the incident angle of surface plasmons, the phased array radar technology based on optical waveguides offers higher precision and higher response, significantly outperforming traditional mechanical laser scanning techniques in surface plasmon excitation wave vector matching and system control.

[0030] To achieve the above objectives, the technical solution adopted by the present invention is as follows:

[0031] First, GaAs was selected as the substrate for the optical phased array radar waveguide, AlGaAs as the cladding, and undoped intrinsic AlGaAs as the core layer. The GaAs wafers were diced into 5 cm x 5 cm rectangular substrates using a dicing machine, and then polished with fine sandpaper. Next, the GaAs wafers were cleaned with high-purity deionized water to remove surface dust, contaminants, and slight organic residues. The samples were immersed in deionized water for 1 minute. Then, the GaAs wafers were transferred to an ultrasonic cleaner and immersed in ethanol, acetone, and isopropanol respectively to remove organic contaminants and grease from the surface for 3 minutes, followed by ultrasonic cleaning at 30 W. Finally, the samples were immersed in deionized water and ultrasonically cleaned at 10 W, then rinsed with running deionized water for 1 minute. Finally, nitrogen gas is used to dry the quartz disc, and the dried quartz disc is placed on a heating plate lined with lint-free paper. The temperature is set to 120 degrees Celsius to dry any remaining moisture on the quartz surface, thus completing the cleaning of the substrate.

[0032] Next, the prepared GaAs substrate is placed on the substrate holder of the molecular beam epitaxy (MBE) equipment for preheating, raising the substrate temperature to the set preheating temperature between 400 °C and 500 °C, preparing for subsequent epitaxial growth. After preheating, the substrate temperature is gradually increased to the target growth temperature between 600 °C and 700 °C, with the heating rate gradually increasing. The MBE chamber is evacuated using an ion pump, maintaining the gas pressure within the reaction chamber at 10⁻⁶ to 10⁻⁸ Torr. The growth rate of the MBE AlGaAs film is controlled at 0.5 Å / s, with the flow rate ratio of Al to Ga source materials adjusted to 1:3, resulting in an AlGaAs film composition of Al₀.₃Ga₀.₇As. The control system parameters of the MBE equipment are then set. High-purity hydrogen is used as the carrier gas to start the MBE equipment. An electron bombardment source heats the cavity to 900 °C, causing high-purity Ga, As, Al, and organometallic compounds to volatilize and form a molecular beam. This beam is then ionized or bombarded with electrons to generate charged ions or electron beams. An electromagnetic lens system focuses and aims this charged beam onto the GaAs substrate surface, controlling the growth rate to form an AlGaAs thin film. During growth, real-time monitoring is performed using a beam evaporation detector or a reflective high-energy electron detector to control the composition ratio of Al0.3Ga0.7As and the 1.44 μm thickness for the phased-array radar cladding. When the doped AlGaAs film, i.e., the phased-array radar cladding, grows to 1.44 μm, molecular beam epitaxy is stopped. The substrate and the grown AlGaAs film are then slowly cooled to room temperature to reduce stress and improve film quality. The AlGaAs thin film grown on the GaAs substrate was removed and subjected to chemical mechanical polishing. In the polishing method, the polishing head was in contact with the polishing pad and polishing slurry under a certain pressure and rotated in the same direction as the polishing pad. The rotation speed of the polishing head and polishing pad was 30 r / min. Silica polishing slurry was used with a flow rate of 50 ml / min and a polishing pressure of 20 kPa. After polishing, the film was cleaned with deionized water and the surface was dried with nitrogen.

[0033] Next, the GaAs substrate with the doped AlGaAs thin film is placed in the molecular beam epitaxy (MBE) apparatus, and the apparatus is preheated to 300 °C. The AlGaAs is controlled to have high chemical and crystal purity. The dopant source is then purified using sputtering, volatilizing or removing low-volatility impurities from the dopant source at high temperature, reducing the content of low-volatility impurities in the dopant source to 99.999%. The temperature inside the MBE cavity is increased to 600 °C, the vacuum level is controlled at 10^-6 Torr, and the growth rate of the AlGaAs thin film is controlled at 0.2 Å / s. The flow rate ratio of Al to Ga source materials is adjusted to 2:3, resulting in an AlGaAs thin film composition of Al0.67Ga0.33As. The control system parameters of the MBE apparatus are then set. Molecular beam epitaxy (MBE) equipment was activated, and the supply flow rate of the dopant source was controlled during the growth process to reduce the introduction of dopant impurities. Furthermore, during the growth of undoped intrinsic AlGaAs films, spectral and electrical performance parameters were monitored in real time to ensure the growth of the undoped intrinsic AlGaAs film. By monitoring the spectral parameters during the growth process in real time, when the undoped intrinsic AlGaAs film, i.e., the phased array radar core layer, grew to 0.55 μm, the substrate and the grown undoped intrinsic AlGaAs film were slowly cooled to room temperature after growth was completed, and then annealed by heating to 300 °C and holding for a period of time to optimize the crystal quality of the film. Waveguides with doped AlGaAs thin films and undoped intrinsic AlGaAs thin films grown on the substrate were extracted. The undoped intrinsic AlGaAs thin film was subjected to chemical mechanical polishing (CMP). In the polishing method, the polishing head was in contact with the polishing pad and polishing slurry under a certain pressure and rotated in the same direction as the polishing pad. The rotation speed of the polishing head and polishing pad was 30 r / min. Silica polishing slurry was used with a flow rate of 50 ml / min and a polishing pressure of 20 kPa to achieve thin film polishing. Finally, the film was cleaned with deionized water and dried with nitrogen gas to complete the single-layer fabrication of the substrate, cladding, and core layer in the phased array radar. Then, the above fabrication steps for the cladding and core layer were repeated to complete the stacked fabrication of a cladding and core layer with 10 channels.

[0034] Finally, after the fabrication of the 10-channel optical phased array radar waveguide, it is sliced ​​and coated with an antireflection film. Control lines are then led out from the electrode layers—both the undoped intrinsic and doped AlGaAs thin films—and connected to the control power supply. A microcontroller is used as the voltage control system. The voltage is controlled by defining the microcontroller's output pins and an 8-bit data bus. The control voltage data is serially output to an 8-bit DAC via the 8-bit data bus, and synchronously triggered for conversion, outputting multiple voltage signals. Different deflection angles correspond to the driving voltage values ​​of different electrode layers, and these values ​​are arranged as binary data according to the voltage values ​​of different electrode layers. The voltage data is stored in the microcontroller's memory. After the microcontroller sends a channel signal, it is converted into an analog signal by the 8-bit DAC, and then converted into a voltage signal by the operational amplifier circuit before being applied to the corresponding electrode layer of the phased array radar, completing the voltage application for the corresponding scanning angle. A multi-wavelength laser is fixed on a three-dimensional displacement platform. By adjusting the platform, the multi-wavelength laser is aligned with a self-focusing lens and a phased array radar chip. The laser beam, whose angle can be changed, is phase-tuned by the phased array radar and then irradiates the surface plasma incident surface. The incident angle of the surface plasma is controlled by changing the electrode voltage. By applying an external electric field, a field voltage ranging from a minimum of -7.79 V to a maximum of 8.7 V is applied to the optical phased array, controlling the maximum deflection angle of the incident laser beam to 13.6°. A similar self-focusing lens is placed at the rear end of the plasma excitation structure. The excitation light is coupled into the optical array through the self-focusing lens and connected to a spectrometer for data processing and analysis of the excitation wavelength and matching angle.

Claims

1. A method for fabricating an optical phased array radar waveguide, characterized in that, The fabrication of the phased array radar optical waveguide includes the following steps: Step a: Cut the GaAs substrate into 5 cm*5 cm pieces, polish the substrate surface with sandpaper, immerse it in deionized water, ethanol, acetone and isopropanol, then clean it with an ultrasonic cleaner, rinse it with running deionized water for 1 minute, and dry the substrate with nitrogen and a drying plate to complete the cleaning of the GaAs substrate. Step b: Place the prepared GaAs substrate on the substrate holder of the molecular beam epitaxy equipment, preheat the substrate to between 400 ℃ and 500 ℃, and then gradually increase the temperature to between 600 ℃ and 700 ℃; Step c: Use an ion pump to control the chamber pressure in the reaction chamber and control the growth rate of the molecular beam epitaxy AlGaAs film. Adjust the flow ratio of Al and Ga source materials to 1:3 and complete the control system parameter settings of the molecular beam epitaxy equipment. Step d: Start the molecular beam epitaxy equipment and use an electron bombardment source to heat the temperature inside the chamber to 900°C, so that high-purity Ga, As, Al and organometallic substances volatilize to form molecular beams, and control the growth rate to form AlGaAs thin films. Step e: When the doped AlGaAs thin film, i.e. the phased array radar cladding, grows to the target requirement, stop molecular beam epitaxy growth, and then slowly cool the substrate and the grown AlGaAs thin film to room temperature. Step f: Take out the AlGaAs thin film grown on the GaAs substrate surface and perform chemical mechanical polishing on the AlGaAs thin film. After polishing, clean the film with deionized water and dry the surface with nitrogen gas to complete the cladding preparation. Step g: Place the GaAs substrate with the doped AlGaAs thin film grown on it into a molecular beam epitaxy apparatus and preheat the apparatus to 300°C. Step h: Use sputtering to purify the dopant source, volatilize or remove low-volatility impurities from the dopant source at high temperature, reduce the content of low-volatility impurities in the dopant source to 99.999%, and use the doped AlGaAs thin film as the electrode layer. Step i: Heat the temperature inside the molecular beam epitaxy cavity to 600 degrees Celsius, control the vacuum level and growth rate, and adjust the flow ratio of Al and Ga source materials to 2:3 to complete the control system parameter settings of the molecular beam epitaxy equipment. Step j: Start the molecular beam epitaxy equipment. After the growth of the undoped intrinsic AlGaAs thin film, i.e. the phased array radar core layer, is completed, slowly cool the substrate and the grown undoped intrinsic AlGaAs thin film to room temperature and perform annealing treatment. Heat to 300°C and hold for a period of time. Step k: Take out the AlGaAs thin film waveguide with doped AlGaAs film and the AlGaAs thin film waveguide without doped intrinsic AlGaAs film grown on the substrate, and perform chemical mechanical polishing on the AlGaAs thin film without doped intrinsic AlGaAs film. The polishing head and polishing pad rotate at 30 r / min, and a silicon dioxide polishing slurry is used with a flow rate of 50 ml / min and a polishing pressure of 20 kPa. Finally, the thin film is polished and cleaned with deionized water and the surface is dried with nitrogen gas to complete the single-layer fabrication of substrate, cladding and core layer in phased array radar. Step 1: Repeat steps b to k to complete the fabrication of a cladding and core layer with 10 channels. After fabrication, the structure is sliced ​​and coated with an antireflection film to complete the fabrication of the phased array radar waveguide structure.

2. The method according to claim 1, characterized in that, The cavity pressure in step c is maintained at 10^-6 to 10^-8 Torr, and the growth rate of the molecular beam epitaxy AlGaAs film is 0.5 Å / s.

3. The method according to claim 1, characterized in that, The cladding thickness in step e is 1.44 μm.

4. The method according to claim 1, characterized in that, The core layer thickness described in step j is 0.55 μm.

5. A beam scanning method for optical phased array radar, characterized in that, The phased array radar beam scanning technology includes the following steps: Step 1: Different deflection angles correspond to the driving voltage values ​​of different electrode layers, and the voltage data is stored in the microcontroller memory according to the different electrode layers of the applied voltage. Step II: After the microcontroller sends out the channel signal, it is converted into an analog signal by an 8-bit DAC, and then converted into a voltage signal by an operational amplifier circuit and applied to the corresponding electrode layer of the phased array radar to complete the voltage application for the corresponding scanning angle. Step III: Fix the multi-wavelength laser on the three-dimensional displacement platform, adjust the displacement platform so that the multi-wavelength laser is aligned with the self-focusing lens and the optical waveguide phased array radar chip, and irradiate the surface plasma incident surface with the laser beam whose angle can be changed after being phased by the phased array radar. Change the electrode voltage to achieve the control of the surface plasma incident angle. Step IV: By applying an external electric field, a field voltage ranging from a minimum of -7.79 V to a maximum of 8.7 V is applied to the optical phased array to control the maximum deflection angle of the incident laser beam to 13.6°. Step V: Place the same self-focusing lens at the rear end of the plasma excitation structure. The excitation light is coupled into the optical fiber through the self-focusing lens and connected to a spectrometer for data processing and analysis of the excitation wavelength and matching angle.

6. The method according to claim 5, characterized in that, The deflection angle electrical signal conversion described in step I is achieved by converting the scanning angle into binary data of the voltage values ​​applied to different electrode layers, and storing the voltage data using a microcontroller memory.

7. The method according to claim 5, characterized in that, The surface plasma incident angle control described in step III is achieved by coupling a multi-wavelength laser and a self-focusing lens into the phased array radar waveguide, and then applying voltage through the electrode layer to change the deflection angle of the outgoing beam, i.e., the incident angle of the excitation structure.

8. The method according to claim 5, characterized in that, The voltage range applied to the optical phased array radar described in step IV includes, but is not limited to, a minimum voltage of -7.79 V to a maximum voltage of 8.7 V.

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