Cationic two-photon photoresist based on ternary polymer and patterning method thereof

By using ternary polymer film-forming resin and femtosecond laser direct writing technology, the problems of insufficient resolution and adhesion of cationic photoresist were solved, and high-precision photolithography patterns were prepared.

CN116577964BActive Publication Date: 2026-06-19ZHEJIANG LAB +1
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Patent Information

Application Number
CN202310706399.4
Authority / Receiving Office
CN · China
Patent Type
Patents(China)
Current Assignee / Owner
Filing Date
2023-06-15
Publication Date
2026-06-19
Estimated Expiration
2043-06-15

AI Technical Summary

Technical Problem

Existing cationic photoresists are prone to diffusion during the post-exposure baking process, resulting in reduced resolution. Furthermore, acrylic polymers have poor etching resistance, which can easily lead to the detachment of high-precision patterns and insufficient adhesion.

Method used

The film-forming resin is a ternary polymer containing styrene, adamantyl methyl methacrylate, and glycidyl methacrylate. It is synthesized through free radical polymerization, and a photoacid initiator and a small molecule active monomer are added. The patterning is performed using femtosecond laser direct writing technology.

Benefits of technology

It improves the adhesion and etching resistance of photoresist, enhances the resolution and mechanical properties of patterns, and meets the needs of high-precision patterned manufacturing.

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Abstract

This invention discloses a cationic two-photon photoresist based on a ternary polymer and its patterning method. The cationic two-photon photoresist comprises 6-30 wt% of a ternary polymer film-forming resin, 0-9 wt% of an active monomer, 0.5-5 wt% of a photoacid-type initiator, and 65-89.5 wt% of a solvent. The ternary polymer film-forming resin has the structural formula shown in Formula (I), and is synthesized via free radical polymerization using styrene, adamantyl methyl methacrylate (as shown in Formula (II)), and glycidyl methacrylate as reactive monomers, with the addition of an initiator. This invention improves the adhesion and etching resistance of the cationic photoresist by introducing groups such as phenyl, hydroxyl, and adamantane into the polymer, thereby increasing the pattern resolution to meet the requirements of patterned manufacturing. Furthermore, the introduction of small molecule monomers into the photoresist system increases the degree of crosslinking, giving the photoresist stronger mechanical properties.
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