A display panel, its manufacturing method, and a display device.

Abstract

This invention provides a display panel, its fabrication method, and a display device. The display panel includes a substrate, a plurality of sub-pixel units formed on the substrate, and a plurality of MIMIM dual resonant structures. Each sub-pixel unit includes an oxide thin-film transistor. The MIMIM dual resonant structure includes a first metal layer, a first insulating layer, a light-absorbing layer, a second insulating layer, and a second metal layer sequentially stacked along a direction away from the substrate. The light-absorbing layer absorbs incident blue light. A first gap region is formed between the blue light sub-pixel unit and its adjacent sub-pixel unit. The MIMIM dual resonant structure is disposed within the first gap region and located between the blue light sub-pixel unit and the oxide thin-film transistor of its adjacent sub-pixel unit. The display panel of this application solves reliability problems such as progressive bright spots and peripheral pixel brightness caused by blue light being added to the oxide thin-film transistor.

Description

TECHNICAL FIELD

[0001] The present application relates to the technical field of display, in particular to a display panel, a preparation method thereof and a display device. BACKGROUND

[0002] WOLED (White Organic Light-Emitting Diode) has a longer service life and higher luminous efficiency compared with ordinary OLED, and has been more widely used. In the WOLED display device, a pixel unit is composed of a red light sub-pixel (R), a green light sub-pixel (G), a blue light sub-pixel (B) and a white light sub-pixel (W). In use, the above-mentioned sub-pixels are combined to emit light to display white. In the WOLED, the blue light with high energy and short wavelength has an impact on the characteristics of the oxide TFT (Thin Film Transistor). When the blue light is added to the oxide TFT, the carrier density of the channel increases, the thin film transistor Vth Negative Shift occurs, and thus the reliability problems such as progressive bright spots and peripheral pixel lightening are caused. SUMMARY

[0003] The purpose of the embodiments of the present application is to provide a display panel, a preparation method thereof and a display device, so as to solve the reliability problems such as progressive bright spots and peripheral pixel lightening caused by the blue light added to the oxide thin film transistor. The specific technical solutions are as follows:

[0004] Embodiments of the first aspect of the application provide a display panel, comprising a substrate, a plurality of sub-pixel units formed on the substrate, and a plurality of MIMIM double resonance structures; the plurality of sub-pixel units comprise red light sub-pixel units, green light sub-pixel units and blue light sub-pixel units, each of the sub-pixel units comprises an oxide thin film transistor; the MIMIM double resonance structure comprises, in a direction away from the substrate, a first metal layer, a first insulating layer, a light-absorbing layer, a second insulating layer and a second metal layer which are sequentially stacked; the first metal layer, the first insulating layer and the light-absorbing layer constitute a lower FP cavity; the light-absorbing layer, the second insulating layer and the second metal layer constitute an upper FP cavity; a spacing region is formed between adjacent sub-pixel units; the second metal layer comprises a metal signal line arranged in the spacing region; the light-absorbing layer has an overlapping region with a projection of the metal signal line on the substrate; the light-absorbing layer is used for absorbing incident blue light; a first spacing region is formed between the blue light sub-pixel unit and the sub-pixel unit adjacent thereto; the MIMIM double resonance structure is arranged in the first spacing region and located between the oxide thin film transistor of the blue light sub-pixel unit and the sub-pixel unit adjacent thereto.

[0005] In some embodiments of the application, the plurality of sub-pixel units further comprise a white light sub-pixel unit.

[0006] A second spacing region is formed between the white light sub-pixel unit and the sub-pixel unit adjacent thereto; the MIMIM double resonance structure is arranged in the second spacing region and located between the oxide thin film transistor of the white light sub-pixel unit and the sub-pixel unit adjacent thereto.

[0007] In some embodiments of the application, the oxide thin film transistor comprises, in a direction away from the substrate, an active layer, a gate insulating layer, a gate, an interlayer dielectric layer and a source-drain metal layer which are sequentially stacked;

[0008] The interlayer dielectric layer covers the gate; a via hole is arranged on the interlayer dielectric layer;

[0009] The source-drain metal layer comprises a source and a drain, and the source and the drain are respectively connected to the active layer through the via hole on the interlayer dielectric layer.

[0010] In some embodiments of the application, the metal signal line and the source-drain metal layer are arranged in the same layer;

[0011] The light-absorbing layer is arranged in the same layer as the active layer, and the interlayer dielectric layer covers the light-absorbing layer.

[0012] In some embodiments of the present application, the first metal layer is disposed between the active layer and the substrate, and the first metal layer is a light shielding layer.

[0013] The first insulating layer is disposed between the active layer and the first metal layer, and the first insulating layer is a buffer layer.

[0014] The interlayer dielectric layer is formed as the second insulating layer.

[0015] The light shielding layer, the buffer layer, the light absorbing layer, the interlayer dielectric layer and the metal signal line are sequentially and in contact with each other, forming a MIMIM double resonance structure.

[0016] In some embodiments of the present application, the material of the active layer is partially conductive IGZO, and the material of the light absorbing layer is fully conductive IGZO.

[0017] In some embodiments of the present application, the display panel further comprises a passivation layer, a color film layer, a planarization layer and a first electrode which are sequentially disposed away from the substrate.

[0018] The passivation layer is disposed on the side of the source-drain metal layer away from the substrate, and covers the source-drain metal layer and the metal signal line.

[0019] The color film layer comprises a plurality of sub-color films, each of which corresponds to one of the sub-pixel units.

[0020] The planarization layer covers the color film layer.

[0021] The planarization layer and the passivation layer are provided with a sleeve hole, and the first electrode is connected to the source-drain metal layer through the sleeve hole on the planarization layer and the passivation layer.

[0022] In some embodiments of the present application, the display panel further comprises a gate line, and the gate line and the metal signal line are cross-disposed.

[0023] The gate line is connected to the gate electrode of the oxide thin film transistor.

[0024] Embodiments of the second aspect of the present application propose a preparation method of a display panel, for preparing the display panel in the above embodiments, comprising:

[0025] Providing a substrate;

[0026] Preparing a first metal layer on the substrate;

[0027] Preparing a first insulating layer on the first metal layer;

[0028] Preparing a light absorbing layer, a second insulating layer and an oxide thin film transistor on the first insulating layer, and the second insulating layer covers the light absorbing layer.

[0029] preparing a second metal layer on the second insulating layer;

[0030] The first metal layer, the first insulating layer, the light-absorbing layer, the second insulating layer and the second metal layer form a MIMIM double-resonance structure.

[0031] In some embodiments of the present application, the oxide thin film transistor comprises an active layer, a gate insulating layer, a gate, an interlayer dielectric layer and a source-drain metal layer;

[0032] The preparing the light-absorbing layer, the second insulating layer and the oxide thin film transistor on the first insulating layer comprises:

[0033] An IGZO layer is prepared on the first insulating layer;

[0034] An active layer of the oxide thin film transistor is formed by a patterning process and a conductorization process; the material of the active layer is partially conductorized IGZO, and the material of the light-absorbing layer is conductorized IGZO;

[0035] A gate insulating layer is prepared on the active layer;

[0036] A gate is prepared on the gate insulating layer; the gate is not in contact with the active layer;

[0037] An interlayer dielectric layer is prepared on the gate, covering the gate and the gate insulating layer, and forming a second insulating layer;

[0038] A via hole is formed on the interlayer dielectric layer;

[0039] A source-drain metal layer is prepared on the interlayer dielectric layer, and the source-drain metal layer is connected to the active layer through the via hole on the interlayer dielectric layer.

[0040] In some embodiments of the present application, after the preparing the second metal layer on the second insulating layer, the method further comprises:

[0041] A metal signal line is prepared on the source-drain metal layer, and the metal signal line forms a second metal layer;

[0042] A passivation layer is prepared on the second metal layer;

[0043] A color film layer is prepared on the passivation layer;

[0044] A planarization layer is prepared on the color film layer, covering the color film layer;

[0045] A via hole is formed on the planarization layer and the passivation layer;

[0046] A first electrode is prepared on the planarization layer, and the first electrode is connected to the source-drain metal layer through the via hole of the planarization layer and the passivation layer.

[0047] The embodiment of the third aspect of the present application provides a display device, which comprises the display panel of any one of the embodiments of the first aspect.

[0048] The embodiment of the present application has the following beneficial effects:

[0049] The display panel of the present application comprises a MIMIM double resonance structure, the MIMIM double resonance structure is formed with an upper FP cavity (Fabry-Perot cavity) and a lower FP cavity arranged in an upper and lower manner, light can be reflected in the upper FP cavity or the lower FP cavity, and the upper FP cavity and the lower FP cavity have a light absorption layer therebetween, the light absorption layer is used to absorb incident blue light, therefore, the MIMIM double resonance structure in the display panel of the present application can absorb incident blue light and can convert short wavelengths into long wavelengths through wavelength shift. The MIMIM double resonance structure is arranged in a first interval region between a blue light sub-pixel unit and a sub-pixel unit adjacent to the blue light sub-pixel unit, and is located between oxide thin film transistors of the blue light sub-pixel unit and the sub-pixel unit adjacent to the blue light sub-pixel unit, in this way, in the process that the blue light is shot to the oxide thin film transistor of the sub-pixel unit adjacent to the blue light sub-pixel unit, the blue light needs to pass through the MIMIM double resonance structure, no matter the blue light passes through the upper FP cavity or the lower FP cavity, the blue light will be absorbed, and the blue light cannot be propagated to the oxide thin film transistor of the sub-pixel unit adjacent to the blue light sub-pixel unit, thereby solving the reliability problems such as progressive bright spots and peripheral pixel brightening caused by the blue light being added to the oxide thin film transistor.

[0050] The preparation method of the display panel of the present application is used to prepare the display panel in the above embodiments, since the display panel of the present application comprises a MIMIM double resonance structure, the blue light can be absorbed in the process that the blue light is shot to the oxide thin film transistor of the sub-pixel unit adjacent to the blue light sub-pixel unit, so that the blue light cannot be propagated to the oxide thin film transistor of the sub-pixel unit adjacent to the blue light sub-pixel unit, therefore, the display panel prepared by using the preparation method of the display panel of the present application solves the reliability problems such as progressive bright spots and peripheral pixel brightening caused by the blue light being added to the oxide thin film transistor.

[0051] The display device of the present application comprises the display panel in any one of the embodiments of the first aspect, since the display panel of the present application comprises a MIMIM double resonance structure, the blue light can be absorbed in the process that the blue light is shot to the oxide thin film transistor of the sub-pixel unit adjacent to the blue light sub-pixel unit, so that the blue light cannot be propagated to the oxide thin film transistor of the sub-pixel unit adjacent to the blue light sub-pixel unit, so that the display device of the present application can solve the reliability problems such as progressive bright spots and peripheral pixel brightening caused by the blue light being added to the oxide thin film transistor. BRIEF DESCRIPTION OF DRAWINGS

[0052] In order to more clearly illustrate the technical solutions in the embodiments of the present application or the prior art, the drawings needed to be used in the embodiments or prior art description will be briefly introduced. Obviously, the drawings in the following description only constitute some embodiments of the present application, and other embodiments can also be obtained by those skilled in the art according to these drawings.

[0053] Figure 1 A characteristic change diagram of an oxide thin film transistor when a light source is added to the oxide thin film transistor;

[0054] Figure 2 A display panel residual image test illustration in the related art;

[0055] Figure 3 A layout of a display panel of an embodiment of the present application;

[0056] Figure 4 A principle diagram of a MIMIM double resonance structure in a display panel of an embodiment of the present application;

[0057] Figure 5 A MIM structure schematic diagram;

[0058] Figure 6a A layer structure relationship diagram of a conventional MIMIM double resonance structure;

[0059] Figure 6b A Figure 4 A local enlarged schematic diagram at a dashed box;

[0060] Figure 7 A light absorption capacity diagram of non-conductorized IGZO and conductorized IGZO;

[0061] Figure 8 A waveform diagram of white light, blue light, red light and green light;

[0062] Figure 9 A flowchart of a preparation method of a display panel of an embodiment of the present application.

[0063] Explanation of reference signs:

[0064] Display panel 10; thick metal layer 21; insulating layer 22; thin metal layer 23; metal layer 24; metal thin film layer 25; substrate 100; MIMIM double resonance structure 200; upper FP cavity 201; lower FP cavity 202; first metal layer 210; first insulating layer 220; light absorbing layer 230; second insulating layer 240; second metal layer 250; metal signal line 251; sub-pixel unit 300; red light sub-pixel unit 301; green light sub-pixel unit 302; blue light sub-pixel unit 303; white light sub-pixel unit 304; pixel area 300a; TFT area 300b; oxide thin film transistor 310; active layer 311; gate insulating layer 312; gate 313; interlayer dielectric layer 314; source-drain metal layer 315; passivation layer 400; color film layer 500; sub-color film 510; planarization layer 600; first electrode 700; gate line 801; first spacing area 901; second spacing area 902. DETAILED DESCRIPTION

[0065] The technical solutions in the embodiments of the present application will be clearly and completely described below with reference to the drawings in the embodiments of the present application. Obviously, the described embodiments are only part of the embodiments of the present application, rather than all the embodiments of the present application. Based on the embodiments in the present application, all other embodiments obtained by those of ordinary skill in the art based on the present application belong to the scope of protection of the present application.

[0066] The WOLED display panel uses an oxide thin film transistor (Oxide TFT), which has the following characteristics: when a high-energy short-wavelength light source (Blue Light) is added, the carrier density on the Oxide Channel increases, and the Vth(-) shift and other characteristic changes occur.

[0067] Specifically, as shown in Figure 1 , the figure shows the characteristic changes of the oxide thin film transistor when the light source is added to the oxide thin film transistor. Figure 1 Figure 1 ​The three curves are Initial, NBTS (Negative bias temperature stress), and NBTIS (Negative bias temperature illumination stress) characteristic curves, respectively. It can be seen that the NBTIS characteristic curve changes the most, and the threshold voltage drifts negatively more. As such, residual image problems can occur during display. This characteristic change is caused by the addition of light sources to the oxide thin film transistor. This characteristic fluctuation has a reliability problem, i.e., linearity is poor due to traveling bright spots and poor driving of adjacent GOA (Gate On Array) TFTs, thereby causing a reliability problem of traveling poor linearity.

[0068] Specifically, as shown in Figure 2 , Figure 2 is a residual image test diagram of a display panel in the related art. The two color blocks on the left represent dark pixels, the two color blocks on the right represent bright pixels, the two color blocks on the top are display pictures in an initial state, and the two color blocks on the bottom are display pictures after residual image testing. The oxide thin film transistor of the black color block (Black Pattern) on the top left receives a negative bias, and the oxide thin film transistor of the white color block (White Pattern) on the top right receives a positive bias stress. At this time, light generated from the White Pattern is transmitted to the oxide thin film transistor of the Black Pattern adjacent to the White Pattern, a Vth(-) shift is generated, and due to the change in the oxide thin film transistor characteristic, the brightness of the Black Pattern increases, the junction between the Black Pattern and the White Pattern is bright, and thus an undesirable phenomenon is generated.

[0069] To solve the reliability problems of traveling bright spots and bright peripheral pixels caused by the addition of blue light to the oxide thin film transistor, the present application provides a display panel and a preparation method thereof, and a display device.

[0070] As shown in Figure 3 and Figure 4 , Figure 3 is a layout diagram of a display panel 10 of an embodiment of the present application, Figure 4This is a schematic diagram of the MIMIM dual resonance structure 200 in the display panel 10 of this application embodiment. The first aspect of this application proposes a display panel 10, which includes a substrate 100, a plurality of sub-pixel units 300 formed on the substrate 100, and a plurality of MIMIM dual resonance structures 200. The plurality of sub-pixel units 300 include a red sub-pixel unit 301, a green sub-pixel unit 302, and a blue sub-pixel unit 303, and each sub-pixel unit 300 includes an oxide thin-film transistor 310. The MIMIM dual resonance structure 200 includes a first metal layer 210, a first insulating layer 220, a light-absorbing layer 230, a second insulating layer 240, and a second metal layer 250 sequentially stacked along a direction away from the substrate 100. The first metal layer 210, the first insulating layer 220, the first insulating layer 230, the second insulating layer 240, and the second metal layer 250 are also mentioned. Layer 220 and light-absorbing layer 230 constitute the lower FP cavity 202; light-absorbing layer 230, second insulating layer 240 and second metal layer 250 constitute the upper FP cavity 201; a gap region is formed between adjacent sub-pixel units 300; the second metal layer 250 includes a metal signal line 251 disposed in the gap region; the orthographic projection of the light-absorbing layer 230 on the substrate 100 and the projection of the metal signal line 251 on the substrate 100 have an overlapping region; the light-absorbing layer 230 is used to absorb incident blue light; a first gap region 901 is formed between the blue light sub-pixel unit 303 and its adjacent sub-pixel unit 300; the MIMIM dual resonance structure 200 is disposed in the first gap region 901 and located between the oxide thin film transistor 310 of the blue light sub-pixel unit 303 and its adjacent sub-pixel unit 300.

[0071] like Figure 3 As shown, the oxide thin-film transistor 310 is disposed in the corresponding TFT region 300b, and light is emitted from the pixel region 300a.

[0072] This application introduces, as Figure 5 The MIM (Metal-Insulator-Metal) structure shown can resonate with the Fabry-Perot cavity (FP cavity). Figure 5 This is a schematic diagram of the MIM structure. Figure 5 The layer structure in the MIM structure, from top to bottom, consists of a thin metal layer 23, an insulating layer 22, and a thick metal layer 21, with the thick metal layer 21 serving as a back reflector to reflect light. This resonant structure allows for selective removal of light wavelengths or phase shifting by adjusting the thickness of the Insulator in the MIM structure. Based on this, the display panel 10 of this application is configured as follows... Figure 6aMIMIM (Metal-Insulator-Thin Film Metal-Insulator-Metal) double resonance structure, Figure 6a The layer structure relationship diagram of the conventional MIMIM double resonance structure is shown in FIG. 2, from top to bottom, the metal layer 24, the insulating layer 22, the metal thin film layer 25, the insulating layer 22 and the metal layer 24, wherein the upper three film layers form an upper cavity, the lower three film layers form a lower cavity, and the metal thin film layer 25 serves as a common film layer of the two cavities. As shown in FIG. 3, Figure 6b Figure 6b As shown in FIG. 4, Figure 4 The local enlarged view at the dashed box is shown in FIG. 5, from top to bottom, the second metal layer 250, the second insulating layer 240, the light absorption layer 230, the first insulating layer 220 and the first metal layer 210 are arranged in sequence, Figure 6b The film layers shown in FIG. 6 correspond to Figure 6a The film layers shown in FIG. 6 correspond to

[0073] The display panel 10 of the present application includes a MIMIM double resonance structure 200, the MIMIM double resonance structure 200 is formed with an upper FP cavity 201 (Fabry-Perot cavity) and a lower FP cavity 202 arranged in sequence, light can be reflected in the upper FP cavity 201 or the lower FP cavity 202, and the MIMIM double resonance structure 200 in the display panel 10 of the present application has a light absorption layer 230 between the upper FP cavity 201 and the lower FP cavity 202, which is used to absorb incident blue light. Therefore, the MIMIM double resonance structure 200 in the display panel 10 of the present application can absorb incident blue light and convert short wavelengths into long wavelengths through wavelength shift. The MIMIM double resonance structure 200 is arranged in the first interval region 901 between the blue light sub-pixel unit 303 and the sub-pixel unit 300 adjacent to it, and between the oxide thin film transistor 310 of the blue light sub-pixel unit 303 and the sub-pixel unit 300 adjacent to it. In this way, in the process of blue light being shot to the oxide thin film transistor 310 of the sub-pixel unit 300 adjacent to the blue light sub-pixel unit 303, the blue light needs to pass through the MIMIM double resonance structure 200, and no matter whether the blue light passes through the upper FP cavity 201 or the lower FP cavity 202, it will be absorbed, and the blue light cannot be transmitted to the oxide thin film transistor 310 of the sub-pixel adjacent to the blue light sub-pixel unit 303, thereby solving the reliability problems such as progressive bright spots and peripheral pixel brightening caused by the blue light being added to the oxide thin film transistor 310.

[0074] In some embodiments of the present application, the material of the light absorption layer 230 can be all-conductor IGZO (indium gallium zinc oxide). The all-conductor IGZO has metallic properties, and therefore can be used as a metal thin film layer 25 together with other film layers to form a MIMIM double resonance structure 200. As shown in FIG. 7, Figure 7 ​As shown, Figure 7 The graph of the light absorption ability of the non-conductor IGZO and the conductor IGZO. Figure 7 The Low doping curve in the graph is the curve of the non-conductor IGZO, and the High doping curve is the curve of the conductor IGZO, in which the horizontal axis represents the wavelength, and the vertical axis represents the extinction coefficient. From the graph, it can be seen that the conductor IGZO can eliminate the absorption of the short wavelength of 400-600 nm (the short wave blue light wavelength is 400-480 nm). Figure 7 It can be seen that the conductor IGZO can eliminate the absorption of the short wavelength of 400-600 nm (the short wave blue light wavelength is 400-480 nm). When the MIMIM double resonance structure 200 of this resonance structure is used, the internal reflection light applied from the adjacent sub-pixel unit 300 can be blocked. In addition, by using the conductor IGZO layer, the light source in the short wavelength region of 400-600 nm can be additionally blocked, so that the influence of the internal reflection light source on the oxide thin film transistor 310 can be minimized.

[0075] In some embodiments of the present application, as shown in Figure 2 and Figure 3 As shown, the plurality of sub-pixel units 300 further include a white light sub-pixel unit 304; a second spacing region 902 is formed between the white light sub-pixel unit 304 and the sub-pixel unit 300 adjacent thereto; the MIMIM double resonance structure 200 is arranged in the second spacing region 902 and located between the oxide thin film transistor 310 of the white light sub-pixel unit 304 and the sub-pixel unit 300 adjacent thereto.

[0076] As shown in Figure 8 , Figure 8 is a waveform graph of white light, blue light, red light and green light, Figure 8 The waveform of the white light is shown in the graph, the white light has three light sources of blue light, green light and red light, and the MIMIM double resonance structure 200 is arranged between the oxide thin film transistor 310 of the white light sub-pixel unit 304 and the sub-pixel unit 300 adjacent thereto in the second spacing region 902, which can reduce the short wavelength light related to the blue light and form the long wavelength by Phase Shift.

[0077] Specifically, the light absorption layer 230 can be arranged as Figure 3Within the area indicated by the dashed box, the orthographic projection of the light-absorbing layer 230 onto the substrate 100 falls within the area of ​​the orthographic projection of the metal signal line 251 onto the substrate 100, thus forming the MIMIM dual resonant structure 200 within the area indicated by the dashed box. It is understood that the orthographic projection of the light-absorbing layer 230 onto the substrate 100 can also extend beyond the area of ​​the orthographic projection of the metal signal line 251 onto the substrate 100, as long as the orthographic projections of the first metal layer 210, the first insulating layer 220, the light-absorbing layer 230, the second insulating layer 240, and the second metal layer 250 onto the substrate 100 have an overlapping region, and this overlapping region is located between the blue light sub-pixel unit 303 or the white light sub-pixel unit 304 and the oxide thin-film transistor 310 of the adjacent sub-pixel unit 300, a MIMIM dual resonant structure 200 capable of absorbing blue light can be formed.

[0078] If the MIMIM dual resonance structure 200 is set to be fully covered as... Figure 3 The dashed box shown, namely the left and right metal signal lines 251 (Metal) regions arranged in the Blue Sub-Pixel unit 303 and the White Sub-Pixel unit 304, can minimize the influence of the light source on the adjacent sub-pixel unit 300, thereby stabilizing the characteristics of the oxide thin film transistor 310 and improving poor reliability.

[0079] In some embodiments of this application, such as Figure 4 As shown, the oxide thin-film transistor 310 includes an active layer 311, a gate insulating layer 312, a gate 313, an interlayer dielectric layer 314, and a source / drain metal layer 315, which are sequentially stacked along a direction away from the substrate 100; the interlayer dielectric layer 314 covers the gate 313; a via is provided on the interlayer dielectric layer 314; the source / drain metal layer 315 includes a source and a drain, and the source and drain are respectively connected to the active layer 311 through the via on the interlayer dielectric layer 314.

[0080] In some embodiments of this application, such as Figure 4 As shown, the metal signal line 251 and the source / drain metal layer 315 are disposed in the same layer; the light-absorbing layer 230 and the active layer 311 are disposed in the same layer, and the interlayer dielectric layer 314 covers the light-absorbing layer 230. Thus, when the metal signal line 251 and the source / drain metal layer 315 are made of the same material, two film layers can be formed in a single fabrication, which improves production efficiency. The same applies to the light-absorbing layer 230 and the active layer 311.

[0081] In some embodiments of this application, such as Figure 4As shown, the first metal layer 210 is arranged between the active layer 311 and the substrate 100, and the first metal layer 210 is a light shield layer; the first insulating layer 220 is arranged between the active layer 311 and the first metal layer 210, and the first insulating layer 220 is a buffer layer (Buffer insulating layer); the interlayer dielectric layer 314 (ILD insulating layer) is formed as the second insulating layer 240; the light shield layer, the buffer layer, the light absorption layer 230, the interlayer dielectric layer 314, and the metal signal line 251 are sequentially arranged in contact, forming the MIMIM double resonance structure 200. By adding the light absorption layer 230, the MIMIM double resonance structure 200 is formed together with other existing film layers, without the need to additionally prepare multiple film layers to form the MIMIM double resonance structure 200, which is conducive to improving production efficiency.

[0082] In some embodiments of the present application, the material of the active layer 311 can be partially conductive IGZO. Specifically, the part of the active layer 311 that directly contacts the source and drain of the oxide thin film transistor 310 can be made conductive.

[0083] When the material of the active layer 311 is partially conductive IGZO, the material of the light absorption layer 230 is fully conductive IGZO, and the active layer 311 and the light absorption layer 230 are arranged in the same layer. In this way, the light absorption layer 230 can be formed using the general oxide thin film transistor 310 process without the need for additional processes, which is conducive to improving production efficiency.

[0084] In some embodiments of the present application, as shown in Figure 4 As shown, the display panel 10 further includes a passivation layer 400 (PVX layer), a color film layer 500 (CF), a flat layer 600 (Resin layer), and a first electrode 700 arranged in sequence in a direction away from the substrate 100; the passivation layer 400 is arranged on the side of the source-drain metal layer 315 away from the substrate 100 and covers the source-drain metal layer 315 and the metal signal line 251; the color film layer 500 includes a plurality of sub-color films 510, each sub-color film 510 corresponding to a sub-pixel unit 300; the flat layer 600 covers the color film layer 500; the flat layer 600 and the passivation layer 400 are provided with a sleeve hole, and the first electrode 700 is connected with the source-drain metal layer 315 through the sleeve hole on the flat layer 600 and the passivation layer 400.

[0085] Specifically, the color film layer 500 can include a blue sub-color film, a green sub-color film, and a red sub-color film, and white light presents different colors of light after passing through different color sub-color films 510. The first electrode 700 can be a cathode or an anode (Anode), and the first electrode 700 can be connected with the source or drain of the source-drain metal layer 315. The sub-color film 510 is arranged in the pixel area 300a.

[0086] In some embodiments of the present application, as shown inFigure 3 As shown, the display panel 10 also includes a gate line 801, which is arranged intersecting with the metal signal line 251; the gate line 801 is connected to the gate 313 of the oxide thin film transistor 310.

[0087] like Figure 3 As shown, the lines extending in the vertical direction are metal signal lines 251, which can be Vdd line (voltage line), Vdate line (data signal line), Vref line (reference signal line), Vdate line and Vdd line from left to right; the two lines extending in the horizontal direction are gate lines 801.

[0088] like Figure 9 As shown, Figure 9 This is a flowchart illustrating the fabrication method of the display panel 10 according to an embodiment of this application. A second aspect of this application provides a method for fabricating the display panel 10 described above, comprising:

[0089] S1. Provide substrate 100;

[0090] S2. A first metal layer 210 is prepared on the substrate 100;

[0091] S3. Prepare a first insulating layer 220 on the first metal layer 210;

[0092] S4. A light-absorbing layer 230, a second insulating layer 240, and an oxide thin-film transistor 310 are prepared on the first insulating layer 220; the second insulating layer 240 covers the light-absorbing layer 230.

[0093] S5. Prepare a second metal layer 250 on the second insulating layer 240;

[0094] The first metal layer 210, the first insulating layer 220, the light-absorbing layer 230, the second insulating layer 240, and the second metal layer 250 form a MIMIM dual resonance structure 200.

[0095] The method for fabricating the display panel 10 of this application is used to fabricate the display panel 10 in the above embodiments. Since the display panel 10 of this application includes a MIMIM dual resonant structure 200, it can absorb blue light during the process of blue light being directed toward the oxide thin film transistor 310 of the sub-pixel unit 300 adjacent to the blue light sub-pixel unit 303, so that the blue light cannot propagate to the oxide thin film transistor 310 of the sub-pixel unit 300 adjacent to the blue light sub-pixel unit 303. Therefore, the display panel 10 fabricated by the method for fabricating the display panel 10 of this application solves the reliability problems such as progressive bright spots and peripheral pixel brightness caused by the addition of blue light to the oxide thin film transistor 310.

[0096] In some embodiments of the present application, referring to Figure 4 The oxide thin film transistor 310 includes an active layer 311, a gate insulating layer 312, a gate 313, an interlayer dielectric layer 314, and a source-drain metal layer 315. The preparation of the light-absorbing layer 230, the second insulating layer 240, and the oxide thin film transistor 310 on the first insulating layer 220 includes:

[0097] The IGZO layer is prepared on the first insulating layer 220.

[0098] The light-absorbing layer 230 and the active layer 311 of the oxide thin film transistor 310 are formed by a patterning process and a conductorization process. The material of the active layer 311 is partially conductorized IGZO, and the material of the light-absorbing layer 230 is fully conductorized IGZO.

[0099] The gate insulating layer 312 is prepared on the active layer 311.

[0100] The gate 313 is prepared on the gate insulating layer 312. The gate 313 is not in contact with the active layer 311.

[0101] The interlayer dielectric layer 314 is prepared on the gate 313. The interlayer dielectric layer 314 covers the gate 313 and the gate insulating layer 312, and is formed as the second insulating layer 240.

[0102] The via hole is formed on the interlayer dielectric layer 314.

[0103] The source-drain metal layer 315 is prepared on the interlayer dielectric layer 314. The source-drain metal layer 315 is connected to the active layer 311 through the via hole on the interlayer dielectric layer 314.

[0104] When the material of the active layer 311 is partially conductorized IGZO, the material of the light-absorbing layer 230 is fully conductorized IGZO, and the active layer 311 and the light-absorbing layer 230 are disposed in the same layer. In this way, the light-absorbing layer 230 can be formed using the general oxide thin film transistor 310 process without additional processes, which is beneficial to improve production efficiency.

[0105] In some embodiments of the present application, after the second metal layer 250 is prepared on the second insulating layer 240, the method further includes:

[0106] The metal signal line 251 is prepared in the same layer as the source-drain metal layer 315. The metal signal line 251 becomes the second metal layer 250.

[0107] The passivation layer 400 is prepared on the second metal layer 250.

[0108] The color film layer 500 is prepared on the passivation layer 400.

[0109] A planar layer 600 is prepared on the color film layer 500, and the planar layer 600 covers the color film layer 500;

[0110] A via hole is formed on the planar layer 600 and the passivation layer 400;

[0111] A first electrode 700 is prepared on the planar layer 600, and the first electrode 700 is connected with the source-drain metal layer 315 through the via hole of the planar layer 600 and the passivation layer 400.

[0112] Embodiments of the third aspect of the present application provide a display device, including the display panel 10 in any of the embodiments of the first aspect.

[0113] The display device of the present application includes the display panel 10 in any of the embodiments of the first aspect, and since the display panel 10 of the present application includes the MIMIM double resonance structure 200, the blue light can be absorbed in the process of the blue light being directed to the oxide thin film transistor 310 of the sub-pixel unit 300 adjacent to the blue light sub-pixel unit 303, so that the blue light cannot be propagated to the oxide thin film transistor 310 of the sub-pixel unit 300 adjacent to the blue light sub-pixel unit 303, and the display device of the present application can solve the reliability problems such as progressive bright spots and peripheral pixel brightening caused by the blue light being added to the oxide thin film transistor 310.

[0114] It should be noted that, in this document, the terms such as first and second are merely used to distinguish one entity or operation from another entity or operation, and do not necessarily require or imply that there is any such actual relationship or order between these entities or operations. Moreover, the terms "include", "contain" or any other variants thereof are intended to cover non-exclusive inclusion, so that the process, method, article or device including a series of elements not only includes those elements, but also includes other elements not explicitly listed or inherent to such process, method, article or device. Without more limitations, the element defined by the statement "including a" does not exclude the presence of another identical element in the process, method, article or device including the element.

[0115] Each of the embodiments in the present specification is described in a related manner, and the same or similar parts between each of the embodiments can be referred to each other, and each of the embodiments mainly explains the difference from other embodiments. Especially, for the system embodiments, since they are basically similar to the method embodiments, the description is relatively simple, and the related parts can be referred to the part of the description of the method embodiments.

[0116] The above merely describes the preferred embodiments of the present application, but is not used to limit the protection scope of the present application. Any modification, equivalent replacement, improvement, etc. made within the spirit and principle of the present application shall be included in the protection scope of the present application.

Claims

1. A display panel, characterized by, The display panel comprises: a substrate, a plurality of sub-pixel units formed on the substrate, and a plurality of MIMIM double-resonance structures; the plurality of sub-pixel units comprise a red light sub-pixel unit, a green light sub-pixel unit, and a blue light sub-pixel unit, each of the sub-pixel units comprising an oxide thin film transistor; the MIMIM double-resonance structure comprises, in a direction away from the substrate, a first metal layer, a first insulating layer, a light-absorbing layer, a second insulating layer, and a second metal layer which are sequentially stacked; the first metal layer, the first insulating layer, and the light-absorbing layer form a lower FP cavity; the light-absorbing layer, the second insulating layer, and the second metal layer form an upper FP cavity; a spacing region is formed between adjacent sub-pixel units; the second metal layer comprises a metal signal line arranged in the spacing region; a projection of the light-absorbing layer on the substrate and a projection of the metal signal line on the substrate have an overlapping region; a projection of the light-absorbing layer on the substrate falls within a projection of the metal signal line on the substrate; and the light-absorbing layer is used for absorbing incident blue light; a first spacing region is formed between the blue light sub-pixel unit and the sub-pixel unit adjacent thereto; and the MIMIM double-resonance structure is arranged in the first spacing region and located between the oxide thin film transistor of the blue light sub-pixel unit and the sub-pixel unit adjacent thereto.

2. The display panel of claim 1, wherein, the plurality of sub-pixel units further comprise a white light sub-pixel unit; a second spacing region is formed between the white light sub-pixel unit and the sub-pixel unit adjacent thereto; and the MIMIM double-resonance structure is arranged in the second spacing region and located between the oxide thin film transistor of the white light sub-pixel unit and the sub-pixel unit adjacent thereto.

3. The display panel of claim 1 or 2, wherein, the oxide thin film transistor comprises, in a direction away from the substrate, an active layer, a gate insulating layer, a gate, an interlayer dielectric layer, and a source-drain metal layer which are sequentially stacked; the interlayer dielectric layer covers the gate; and a via hole is arranged on the interlayer dielectric layer; the source-drain metal layer comprises a source and a drain, and the source and the drain are connected to the active layer through the via hole on the interlayer dielectric layer.

4. The display panel of claim 3, wherein, the metal signal line and the source-drain metal layer are arranged in the same layer; the light-absorbing layer is arranged in the same layer as the active layer, and the interlayer dielectric layer covers the light-absorbing layer.

5. The display panel according to claim 4, wherein the first metal layer is arranged between the active layer and the substrate, and the first metal layer is a light-blocking layer; the first insulating layer is arranged between the active layer and the first metal layer, and the first insulating layer is a buffer layer; the interlayer dielectric layer is formed as the second insulating layer; the light-blocking layer, the buffer layer, the light-absorbing layer, the interlayer dielectric layer, and the metal signal line are sequentially arranged in contact to form the MIMIM double-resonance structure.

6. The display panel of claim 3, wherein, the active layer is made of partially conductive IGZO; and the light-absorbing layer is made of fully conductive IGZO.

7. The display panel of claim 5, wherein, the display panel further comprises, in a direction away from the substrate, a passivation layer, a color film layer, a planarization layer, and a first electrode which are sequentially arranged. The passivation layer is arranged on the side of the source-drain metal layer away from the substrate and covers the source-drain metal layer and the metal signal line; The color film layer comprises a plurality of sub-color films, each of the sub-color films corresponding to one of the sub-pixel units; The planar layer covers the color film layer; The planar layer and the passivation layer are provided with a sleeve hole, and the first electrode is connected with the source-drain metal layer through the sleeve hole on the planar layer and the passivation layer.

8. The display panel of claim 7, wherein, The display panel further comprises a gate line, and the gate line and the metal signal line are arranged in a cross manner. The gate line is connected with the gate electrode of the oxide thin film transistor.

9. A method for manufacturing a display panel, characterized by, A display panel as claimed in claim 1 is prepared by comprising: providing a substrate; preparing a first metal layer on the substrate; preparing a first insulating layer on the first metal layer; preparing a light-absorbing layer, a second insulating layer and an oxide thin film transistor on the first insulating layer; the second insulating layer covers the light-absorbing layer; preparing a second metal layer on the second insulating layer; the first metal layer, the first insulating layer, the light-absorbing layer, the second insulating layer and the second metal layer form a MIMIM double-resonance structure.

10. The method of manufacturing a display panel according to claim 9, wherein, The oxide thin film transistor comprises an active layer, a gate insulating layer, a gate electrode, an interlayer dielectric layer and a source-drain metal layer; The preparation of the light-absorbing layer, the second insulating layer and the oxide thin film transistor on the first insulating layer comprises: preparing an IGZO layer on the first insulating layer; adopting a patterning process and a conductorization process to form the light-absorbing layer and the active layer of the oxide thin film transistor; the material of the active layer is partially conductorized IGZO, and the material of the light-absorbing layer is conductorized IGZO; preparing a gate insulating layer on the active layer; preparing a gate electrode on the gate insulating layer; the gate electrode is not in contact with the active layer; preparing an interlayer dielectric layer on the gate electrode, the interlayer dielectric layer covering the gate electrode and the gate insulating layer and forming the second insulating layer; forming a via hole on the interlayer dielectric layer; preparing a source-drain metal layer on the interlayer dielectric layer, the source-drain metal layer being connected with the active layer through the via hole on the interlayer dielectric layer.

11. The method of manufacturing a display panel according to claim 10, wherein, After the preparation of the second metal layer on the second insulating layer, further comprising: preparing a metal signal line on the same layer as the source-drain metal layer, the metal signal line forming the second metal layer; preparing a passivation layer on the second metal layer; preparing a color film layer on the passivation layer; preparing a planar layer on the color film layer, the planar layer covering the color film layer; forming a sleeve hole on the planar layer and the passivation layer; preparing a first electrode on the planar layer, the first electrode being connected with the source-drain metal layer through the sleeve hole on the planar layer and the passivation layer.

12. A display device, characterized by comprising: The display panel comprises any one of claims 1 to 8.

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