An apparatus for extraction of contaminants within a wafer cassette

Abstract

The application provides a device for extracting contaminants in a wafer box, comprising a controller, a power device controlled by the controller, a rotating shaft and a connecting shaft; a universal joint for sliding the connecting shaft to control the free switching direction of the connecting shaft in the hemispherical direction; the connecting shaft is connected with the wafer box and is driven by the power device to rotate the wafer box around the axis of the rotating shaft; the universal joint comprises: a vertical slot for controlling the sliding of the connecting shaft in the vertical direction to realize the first state of rotating the wafer box; the first state is that the wafer box is horizontally arranged with the first surface, and the wafer box rotates around the axis; a horizontal slot for controlling the sliding of the connecting shaft in the horizontal direction to realize the second state of rotating the wafer box; the second state is that the first surface is vertically arranged, and the wafer box rotates around the axis. The device has the beneficial technical effects that the program is used to replace the manual real-time accurate adjustment of the cleaning process, the extraction / cleaning of all wafer boxes is realized with the unified standard, the use amount of the solvent / extraction liquid is low, and the cost is saved.

Description

Technical Field

[0001] The present invention relates to the field of wafer cell cleaning for integrated circuit manufacturing, and particularly to an apparatus for extracting / cleaning contaminants inside wafer cells to improve cleaning efficiency and save cleaning time. Background Technology

[0002] In the process of integrated circuit manufacturing, a large number of wafer cassettes are needed to transport wafers. Because the manufacturing process uses a variety of different types of chemicals, such as doping ions, contaminants accumulate inside the wafer cassettes. After a batch of integrated circuit products is manufactured, the wafer cassettes used in the process need to be cleaned before they can be used in the manufacturing of the next batch of integrated circuit products.

[0003] Liquid contaminants in wafer cassettes mainly include metallic impurities, anionic impurities, and particulate contaminants. Current methods for detecting liquid contaminants in wafer cassettes primarily employ manual or semi-manual immersion extraction. This method uses a large amount of solvent to rinse the inside of the wafer cassette, and samples are taken after rinsing for contaminant index testing. Since wafer cassettes are used to place and transport wafers in integrated circuit manufacturing, the amount of contaminants within them directly affects wafer transport. To avoid wafer contamination, the extract is tested after cleaning the contaminants from the wafer cassette, and wafer cassettes with contaminants reduced to acceptable levels are selected for use in the next integrated circuit manufacturing process.

[0004] Most wafer cassettes used in existing integrated circuit manufacturing plants are approximately cubic with a large internal volume. The full immersion extraction method presents the following problems:

[0005] First, the total immersion extraction method requires a large amount of solvent / extract, which wastes solvent / extract and is costly. Moreover, because it adopts a total immersion method, the extraction method that can be adopted is static and cannot be dynamic.

[0006] Second, using fully manual or semi-manual extraction and cleaning methods cannot achieve standardized cleaning. It requires real-time manual monitoring of the contaminant level in the extraction and cleaning solution to ensure that the contaminants in the wafer cell are reduced to a qualified level, making the cleaning process complicated.

[0007] Third, the lack of procedural control means that the extraction and cleaning mode cannot be adjusted accurately in real time. The cleaning operation is time-consuming and the cleaning degree is inconsistent, which can easily affect the uniformity and yield of integrated circuit products in the same batch. Summary of the Invention

[0008] To address the above technical problems, this invention proposes a mechanical device that can precisely control extraction / cleaning in real time to replace manual labor. This device can achieve low solvent / extraction volume, save costs, and use a program to precisely adjust the cleaning process in real time, achieving a unified standard of cleaning for all wafer cassettes.

[0009] This invention provides a method for simulating contaminant cleaning inside a wafer cassette, comprising:

[0010] Step 100: Determine the wafer cell cleaning elements, including the area elements of each inner surface of the wafer cell, edge elements, the relationship between the edge elements and the area elements, and solvent elements;

[0011] Step 200: Input the cleaning elements to simulate the cleaning process so that the cleaning degree of n points on the inner surface of the wafer cell is the same;

[0012] Step 300: The conditions are met, stop the simulation.

[0013] The cleaning process includes the amount of solvent, the distance the solvent travels through n points on the inner surface of the wafer cassette, the pressure of the solvent on n points on the inner surface of the wafer cassette, the effective amount of solvent cleaning components during the process, the number of cleaning cycles, and the relationship between any two or more of them.

[0014] The number of cleaning cycles includes at least the number of solvent cleaning cycles;

[0015] The conditions include at least a reduction in the increment of cleaning volume.

[0016] Preferably, step 200 includes the cleaning process of point n after the r-th cleaning, which satisfies formula (1):

[0017] Q nr = q nr {a1* (d, nr ), a2*s(v nr ,r,r'), a3*e(d,r,r')}

[0018] Q 1r =Q 2r =Q 3r =….Q nr (1)

[0019] Where r is the number of washes, and r is a natural number greater than 2, e(d,r,r') <e(d,r-1,r-1’);q nr q is the amount of solvent used to clean the nth point during the r-th cleaning cycle. nr The relationship between the pressure f at point n during the r-th cleaning cycle, the distance s traveled by the solvent through point n, and the effective amount e of the cleaning component at point n during the r-th cleaning cycle is a function of the solvent volume d and the velocity v during the r-th cleaning cycle. nr The function s is the velocity v at the r-th time. nrThe function of the number of cleaning cycles r is given by e, which is a function of the solvent amount d, the number of cleaning cycles r, and the redundancy r'. a1, a2, and a3 are the weighted relationships between the pressure f of the solvent at point n during the r-th cleaning cycle, the distance s of the solvent through point n, and the effective amount e of the cleaning component at point n during the r-th cleaning cycle, respectively. a1+a2+a3=1 or the values ​​of a1, a2, and a3 are in the range of 0.1~10.

[0020] Preferably, the conditions include q nr q nr-1 q nr-2 Satisfying formula (2):

[0021] a5*q nr-2 =q nr +a4*q nr-1 (2)

[0022] Where, q nr q is the amount of solvent used to clean point n during the r-th cleaning cycle. nr-1 q is the amount of solvent used to clean point n in the (r-1)th cleaning cycle. nr-2 This represents the amount of solvent used to clean the nth point in the (r-2)th cleaning cycle; a5 ranges from 0.01 to 0.2, and a4 ranges from 0.1 to 0.3; or, a4 and a5 are both positive numbers less than 1, satisfying a5 = 1 / 2 * a4. 2 .

[0023] Preferably, the cleaning process further includes a first state of cleaning four sides of the wafer cassette and a second state of cleaning the remaining two sides of the wafer cassette.

[0024] Preferably, the first state is that the wafer cassette rotates vertically to clean the four surfaces, and the second state is that the wafer cassette rotates horizontally to clean the two surfaces; the cleaning process satisfies formula (3):

[0025] ak=Q i / Q ii

[0026] Q i =q{a6* (d, i ), a6*s( i ), a8*e(d,s)}

[0027] Q ii =q{a6* (d, ii ), a7*s( ii ), a8*e(d,s)} (3)

[0028] Where 'a' ranges from 0.1 to 10, 'k' is the ratio of the cleaning area in the first state to that in the second state, and 'Q' is the cleaning area in the second state. i Q represents the degree of cleaning in the first state. ii This refers to the degree of cleaning in the second state; the pressure f of the solvent on the inner surface of the wafer cassette is the solvent volume d and the solvent velocity. The function of the solvent's path s, where s is the solvent velocity. The effective amount of cleaning component e is a function of solvent amount d and distance s; a6, a7, and a8 are the weighted relationships between the solvent pressure f on the inner surface of the wafer cassette, the distance s traveled by the solvent, and the effective amount of cleaning component e, respectively. a6+a7+a8=1 or the values ​​of a6, a7, and a8 are in the range of 0.1~10.

[0029] Preferably, the first state is executed before the second state, e(d,s(v) i ))≥ e(d,s(v ii )).

[0030] Preferably, the second state is executed before the first state, e(d,s(v) i ))≤ e(d,s(v ii )).

[0031] Preferably, the cleaning process further includes a third state of cleaning the edges, the duration of which is less than the time taken for the second state or the first state.

[0032] Preferably, in the second state, the wafer cassette has only one initial rotation position, while in the first state and the third state, the wafer cassette has several initial rotation positions.

[0033] Preferably, in the first state, the second state, or the third state, the wafer cassette rotates within the container; or, the wafer cassette rotates via a rotating structure connected to its own components.

[0034] A method for extracting contaminants within a wafer cassette based on the above simulation is also provided, comprising:

[0035] Step S1: Add solvent into the wafer cassette;

[0036] Step S2: Adjust to the first state, with the wafer cassette horizontal and upward on the first surface, rotate the wafer cassette around the axis, and clean the four surfaces including the first surface;

[0037] Step S3: Adjust to the second state, making the first face vertical, rotate the wafer cassette around the axis, and clean the remaining two faces:

[0038] Step S4: Adjust to the third state, tilting the first surface and rotating the wafer cassette around the axis to clean the predetermined area;

[0039] Step S5: Remove the solvent, analyze and calculate the contaminant concentration level;

[0040] The first state and the third state have several initial rotation positions, and the third state has multiple intermediate rotation positions. The first state, the second state, and the third state make the cleaning degree of n points on the inner surface of the wafer cell the same.

[0041] The order in which steps S2, S3, and S4 are executed is any combination of S2, S3, and S4.

[0042] Preferably, the first surface is the top surface of the wafer cassette.

[0043] Preferably, the predetermined region includes at least a ridge and / or a portion of the facet of the ridge.

[0044] Preferably, in step S1, with the first surface of the wafer cassette facing upwards, solvent is added into the wafer cassette, and the amount of solvent at least submerges the bottom surface opposite to the first surface, or at least submerges the edge of the bottom surface opposite to the first surface.

[0045] Preferably, the duration of the first state and the second state is related to the area ratio of the cleaning.

[0046] Preferably, the first state is that the wafer cassette rotates vertically to clean the four surfaces, and the second state is that the wafer cassette rotates horizontally to clean the two surfaces; the cleaning process satisfies formula (3):

[0047] ak=Q i / Q ii

[0048] Q i =q{a6* (d, i ), a7*s( i ), a8*e(d,s)}

[0049] Q ii =q{a6* (d, ii ), a7*s( ii ), a8*e(d,s)} (3)

[0050] Where 'a' ranges from 0.1 to 10, 'k' is the ratio of the cleaning area in the first state to that in the second state, and 'Q' is the cleaning area in the second state. i Q represents the degree of cleaning in the first state. ii This refers to the degree of cleaning in the second state; the pressure f of the solvent on the inner surface of the wafer cassette is the solvent volume d and the solvent velocity. The function of the solvent's path s, where s is the solvent velocity. The effective amount of cleaning component e is a function of solvent amount d and distance s; a6, a7, and a8 are the weighted relationships between the pressure f of the solvent on the inner surface of the wafer cassette in the first state or the second state, the distance s traveled by the solvent, and the effective amount of cleaning component e, respectively, and a6+a7+a8=1 or the values ​​of a6, a7, and a8 are in the range of 0.1~10.

[0051] Preferably, a6=a8=0, the solvent travels the same distance in the first state and the second state, and the cleaning degree Q in the first state is... i Cleaning degree Q in the second state ii They can be represented as:

[0052] Q i =s( i )=∫ i t i dt

[0053] Q ii =s( ii )=∫ ii t ii dt

[0054] Among them, s( i ), s( ii These represent the distances traveled by the solvent in the first and second states, respectively. i , ii The t values ​​represent the solvent velocities in the first and second states, respectively. i t ii These are the durations of the first state and the second state, respectively.

[0055] Preferably, step S2 is executed before step S3, e(d,s(v) i ))≥ e(d,s(v ii ));or,

[0056] Step S3 is executed before step S2, e(d,s(v) i ))≤e(d,s(v ii )).

[0057] Preferably, the cleaning process of point n after the r-th cleaning satisfies formula (1):

[0058] Q nr = q nr {a1* (d, nr ), a2*s(v nr ,r,r'), a3*e(d,r,r')}

[0059] Q 1r =Q 2r =Q 3r =….Q nr (1)

[0060] Where r is the number of washes, and r is a natural number greater than 2, e(d,r,r') <e(d,r-1,r-1’);q nr q is the amount of solvent used to clean the nth point during the r-th cleaning cycle. nr The relationship between the pressure f at point n during the r-th cleaning cycle, the distance s traveled by the solvent through point n, and the effective amount e of the cleaning component at point n during the r-th cleaning cycle is a function of the solvent volume d and the velocity v during the r-th cleaning cycle. nr The function s is the velocity v at the r-th time. nr The function of the number of cleaning cycles r is given by e, which is a function of the solvent amount d, the number of cleaning cycles r, and the redundancy r'. a1, a2, and a3 are the weighted relationships between the pressure f of the solvent at point n during the r-th cleaning cycle, the distance s of the solvent through point n, and the effective amount e of the cleaning component at point n during the r-th cleaning cycle, respectively. a1+a2+a3=1 or the values ​​of a1, a2, and a3 are in the range of 0.1~10.

[0061] Preferably, in steps S2, S3, and S4, q nr q nr-1 q nr-2 The cleaning process ends when formula (2) is satisfied:

[0062] a5*q nr-2 =q nr +a4*q nr-1 (2)

[0063] Where, q nr q is the amount of solvent used to clean point n during the r-th cleaning cycle. nr-1 q is the amount of solvent used to clean point n in the (r-1)th cleaning cycle. nr-2This represents the amount of solvent used to clean the nth point in the (r-2)th cleaning cycle; a5 ranges from 0.01 to 0.2, and a4 ranges from 0.1 to 0.3; or, a4 and a5 are both positive numbers less than 1, satisfying a5 = 1 / 2 * a4. 2 .

[0064] To achieve the above-described extraction and cleaning method, an apparatus for extracting contaminants from a wafer cassette is also provided, comprising a controller, a power unit controlled by the controller, a rotating shaft, and a connecting shaft; characterized in that it further comprises,

[0065] A universal joint that allows the connecting shaft to slide inward to control the connecting shaft to freely switch directions in a hemispherical direction;

[0066] The connecting shaft connects to the wafer cassette and is driven by the power unit to rotate the wafer cassette around the axis of the rotating shaft; the universal joint includes:

[0067] A vertical slot is provided to control the connecting shaft to slide in the vertical direction to achieve a first state of rotating wafer cassette.

[0068] A horizontal groove is used to control the connecting shaft to slide horizontally to achieve the second state of rotating the wafer cassette.

[0069] A tilting slot is used to control the connecting shaft to slide in the tilting direction to achieve a third state of rotating the wafer cassette.

[0070] The first state is that the wafer cassette is horizontal and upward with the first surface facing upward, and the wafer cassette rotates around the axis to clean the four surfaces including the first surface;

[0071] The second state is to make the first face vertical, rotate the wafer cassette around the axis, and clean the remaining two faces;

[0072] The third state is to tilt the first surface and rotate the wafer cassette around the axis to clean a predetermined area.

[0073] The first state and the third state have several initial rotation positions, and the third state has multiple intermediate rotation positions. The first state, the second state and / or the third state make the cleaning degree of n points on the inner surface of the wafer cell the same.

[0074] The rotating shaft is fixedly connected to the universal joint. The power device drives the rotating shaft to rotate around its axis and drives the universal joint and the connecting shaft located within the universal joint to rotate. Alternatively, it may include a control shaft and a control device that are coaxial with the rotating shaft and fixedly connected to each other. The control device is rotatably connected to the connecting shaft and allows the connecting shaft to freely change direction within a hemispherical space. The power device drives the control shaft to rotate and drives the connecting shaft and even the wafer cassette to rotate around the axis.

[0075] Preferably, the universal joint is sheet-shaped or semi-circular.

[0076] Preferably, it further includes a connecting groove to connect the vertical groove, the horizontal groove, and the inclined groove.

[0077] Preferably, the vertical groove, the horizontal groove, or the inclined groove includes a positioning structure that cooperates with the connecting shaft to fix its direction.

[0078] Preferably, the first surface is the top surface of the wafer cassette.

[0079] Preferably, the predetermined region includes at least a ridge and / or a portion of both faces of the ridge.

[0080] Preferably, the controller controls the process such that the relationship between the degree of cleaning in the first state and the degree of cleaning in the second state is related to the ratio of the area cleaned; the cleaning process satisfies formula (3):

[0081] ak=Q i / Q ii

[0082] Q i =q{a6* (d, i ), a7*s( i ), a8*e(d,s)}

[0083] Q ii =q{a6* (d, ii ), a7*s( ii ), a8*e(d,s)} (3)

[0084] Where 'a' ranges from 0.1 to 10, 'k' is the ratio of the cleaning area in the first state to that in the second state, and 'Q' is the cleaning area in the second state. i Q is the cleaning amount in the first state. ii This refers to the cleaning amount in the second state; the pressure f of the solvent on the inner surface of the wafer cassette is the solvent amount d and the solvent velocity. The function of the solvent's path s, where s is the solvent velocity. The effective amount of cleaning component e is a function of solvent amount d and distance s; a6, a7, and a8 are the weighted relationships between the pressure f of the solvent on the inner surface of the wafer cassette in the first state or the second state, the distance s traveled by the solvent, and the effective amount of cleaning component e, respectively, and a6+a7+a8=1 or the values ​​of a6, a7, and a8 are in the range of 0.1~10.

[0085] Preferably, a6=a8=0, the solvent travels the same distance in the first state and the second state, and their respective cleaning degrees Q i and Q ii They can be represented as:

[0086] Q i =s( i )=∫ i t i dt、

[0087] Q ii =s( ii )=∫ ii t ii dt;

[0088] Among them, s( i ), s( ii These represent the distances traveled by the solvent in the first and second states, respectively. i , ii The t values ​​represent the solvent velocities in the first and second states, respectively. i t ii These are the durations of the first state and the second state, respectively.

[0089] Preferably, the first state is executed before the second state, e(d,s(v) i ))≥ e(d,s(v ii ));or,

[0090] The second state is executed before the first state, e(d,s(v) i ))≤e(d,s(v ii )).

[0091] Preferably, the controller controls the cleaning process of point n after the r-th cleaning to satisfy formula (1):

[0092] Q nr = q nr {a1* (d, nr ), a2*s(v nr, r,r'), a3*e(d,r,r')}

[0093] Q 1r =Q 2r =Q 3r =….Q nr (1)

[0094] Where r is the number of washes, and r is a natural number greater than 2, e(d,r,r') <e(d,r-1,r-1’);q nr q is the amount of solvent used to clean the nth point during the r-th cleaning cycle. nr The relationship between the pressure f at point n during the r-th cleaning cycle, the distance s traveled by the solvent through point n, and the effective amount e of the cleaning component at point n during the r-th cleaning cycle is a function of the solvent volume d and the velocity v during the r-th cleaning cycle. nr The function s is the velocity v at the r-th time. nr e is a function of the number of cleaning cycles r, where e is a function of the solvent amount d, the number of cleaning cycles r, and the redundancy r'. a1, a2, and a3 are the weighted relationships between the pressure f of the solvent at point n during the r-th cleaning cycle, the distance s of the solvent through point n, and the effective amount e of the cleaning component at point n during the r-th cleaning cycle, respectively. a1+a2+a3=1 or the values ​​of a1, a2, and a3 are in the range of 0.1~10.

[0095] q in the first state, the second state and the third state nr q nr-1 q nr-2 The cleaning process ends when formula (2) is satisfied:

[0096] a5*q nr-2 =q nr +a4*q nr-1 (2)

[0097] Where, q nr q is the amount of solvent used to clean point n during the r-th cleaning cycle. nr-1 q is the amount of solvent used to clean point n in the (r-1)th cleaning cycle. nr-2 This represents the amount of solvent used to clean the nth point in the (r-2)th cleaning cycle; a5 ranges from 0.01 to 0.2, and a4 ranges from 0.1 to 0.3; or, a4 and a5 are both positive numbers less than 1, satisfying a5 = 1 / 2 * a4. 2 .

[0098] This invention provides an apparatus for extracting contaminants inside wafer cassettes. It uses a program to replace manual adjustment of the cleaning process in real time, achieving a uniform extraction / cleaning standard for all wafer cassettes, and using less solvent / extraction solution, thus saving costs. Attached Figure Description

[0099] Appendix Figure 1 This is a flowchart of the method for extracting contaminants within a wafer cassette using the present invention;

[0100] Appendix Figure 2 This is a schematic diagram of the first state of the device for extracting contaminants inside the wafer cassette according to the present invention;

[0101] Appendix Figure 3 This is a schematic diagram of the second state of the device for extracting contaminants inside the wafer cell according to the present invention;

[0102] Appendix Figure 4 This is a schematic diagram of the third state of the device for extracting contaminants inside the wafer cassette according to the present invention;

[0103] Appendix Figure 5 This is a flowchart of the method for simulating the cleaning of contaminants inside a wafer cassette according to the present invention;

[0104] Appendix Figure 6a This is a schematic diagram of a universal joint for the device for extracting contaminants inside a wafer cell according to the present invention.

[0105] Appendix Figure 6b This is a schematic diagram of another universal joint for the device for extracting contaminants inside the wafer cassette of the present invention;

[0106] Appendix Figure 6c It is attached Figure 6a and Figure 6b Right view projection diagram of the center universal joint;

[0107] Appendix Figure 6d It is attached Figure 6c Enlarged schematic diagram of the mid-positioning structure;

[0108] Appendix Figure 6e It is attached Figure 6d Diagram showing the positioning structure in use;

[0109] Appendix Figure 6f It is attached Figure 6d A three-dimensional structural diagram of the connecting shaft part containing positioning accessories. Detailed Implementation

[0110] The following detailed description, with reference to the accompanying drawings, describes the specific implementation methods of the present invention, including the method for simulating contaminant cleaning within a wafer cell, the method for extracting contaminants within a wafer cell, and the apparatus for extracting contaminants within a wafer cell.

[0111] In the accompanying drawings, for ease of description, the dimensions of layers and regions are not actual proportions. It should be noted that the illustrations provided in this embodiment are merely schematic representations of the basic concept of the invention. Therefore, the drawings only show components relevant to the invention and are not drawn according to the actual number, shape, and size of components in implementation. In actual implementation, the type, quantity, and proportion of each component can be arbitrarily changed, and the component layout may be more complex. Furthermore, when two components are referred to as a "connection," it includes physical connections. Unless explicitly specified in the specification, such physical connections include, but are not limited to, electrical connections, contact connections, and wireless signal connections.

[0112] like Figure 5 As shown, the present invention provides a method for simulating contaminant cleaning inside a wafer cassette, comprising:

[0113] Step 100: Determine the wafer cassette cleaning elements, including the area elements of each inner surface of the wafer cassette, edge elements, the relationship between the edge elements and the area elements, and solvent elements. The area elements include the planar area and shape of the six faces inside the horizontal or entirely horizontal wafer cassette, i.e., the area and shape of the solid portion of the inner surface of the wafer cassette, including the area and shape of recesses on some inner surfaces. The edge elements of a cubic wafer cassette include the surface depth and area of ​​the 12 edges. The relationship between the edge elements and the area elements includes the relationship between the two long faces of the edges, such as the included angle between the two long faces and the relationship between the area and the edge. The solvent elements include the solvent volume, the concentration or ratio of the effective cleaning / extraction components, and the changes in the concentration or ratio of the effective cleaning / extraction components during the cleaning process. The cleaning elements also include the wafer cassette volume. The main purpose of this simulation is to replace static immersion with cleaning during the active process. During active cleaning, the solvent volume and the wafer cassette volume have a certain proportional relationship.

[0114] Step 200: Input the cleaning elements to simulate the cleaning process, so that the cleaning degree Q of n points on the inner surface of the wafer cassette is achieved. nr The same; the cleaning process includes the amount of solvent, the distance the solvent travels through n points on the inner surface of the wafer cassette, the pressure of the solvent on the n points on the inner surface of the wafer cassette, the effective amount of solvent cleaning components during the process, the number of cleaning cycles, and the relationship between any two or more of them; including, the cleaning process after the r-th cleaning of the nth point satisfies formula (1):

[0115] Q nr = q nr {a1* (d, nr ), a2*s(v nr ,r, r'), a3*e(d,r,r')}

[0116] Q 1r =Q 2r =Q 3r =….Q nr (1)

[0117] Where r is the number of washes, and r is a natural number greater than 2, e(d,r,r') <e(d,r-1,r-1’)。q nr q is the amount of solvent used to clean the nth point during the r-th cleaning cycle. nr It is a functional relationship between the pressure f at point n during the r-th cleaning of the solvent, the distance s of the solvent through point n, and the effective amount e of the cleaning component at point n during the r-th cleaning of the solvent. f is the solvent quantity d and the velocity v during the r-th cleaning (also considering the redundancy r', not shown in the formula). nr The function s is the velocity v at the r-th time (also considering the redundancy r', not shown in the formula). nr e is a function of the number of cleaning cycles r and the redundancy r', where e is a function of the solvent volume d, the number of cleaning cycles r, and the redundancy r'. The redundancy r' can be on the order of magnitude lower than the number of cleaning cycles r, where a single cleaning cycle r is counted as 1, and the redundancy r' is a positive number less than 1, such as 0.1. Alternatively, the redundancy r' can be on the order of magnitude higher than the number of cleaning cycles r, where a single cleaning cycle r is counted as 1, and the redundancy r' is a positive number greater than 1, such as 10 or 10.1. The redundancy is crucial for adjusting the additional cleaning process caused by the loss of effective solvent components during the cleaning process. If there is no loss of effective solvent components during the cleaning process, but only an increase in the concentration of contaminants in the solvent without affecting the cleaning effect, then r' is 0. If it affects the cleaning effect, then r' is not 0. a1, a2, and a3 represent the weighted relationships between the pressure f at point n in the r-th cleaning cycle, the distance s traveled by the solvent through point n, and the effective amount e of the cleaning component at point n in the r-th cleaning cycle, respectively. a1 + a2 + a3 = 1, or the values ​​of a1, a2, and a3 range from 0.1 to 10. The relationship or range of a1, a2, and a3 is used to adjust... (d, nr ), s(v nr ,r r'), e(d,r,r') for q nr Or Q nrThe overall contribution is as follows: a1=0 during a uniform pressure cleaning process; a2=0 when the solvent passing through each point at a certain speed is strictly controlled (i.e., the solvent speed * time passing through each point is the same); a3=0 when the concentration (i.e., the proportion of effective cleaning components) in the solvent (or extract) within the wafer cassette is controlled and stabilized in real time. Preferably, the number of cleaning cycles r (also considering the number of cycles for redundancy r', not shown in the formula) includes at least the number of solvent cleaning cycles. The overall process largely adopts a standardized, cyclical cleaning process, supplemented by non-cyclic processes to clean areas where the same cleaning degree is not achieved during the cyclic cleaning, so that the cleaning degree Q of n points on the inner surface of the wafer cassette is achieved. nr Same. In some cases, such as when the level of contaminants on the top surface of the wafer cell is less sensitive, the number of cleaning cycles r (also considering the number of redundancy r', not shown in the formula) is the number of cycles, i.e., thoroughly cleaning the four surfaces adjacent to the top surface with specific cyclic cleaning activities (such as rotating around the central axis of the top surface), and thoroughly cleaning the bottom surface opposite the top surface with specific cyclic cleaning activities (such as uniformly shaking to barely cover the solvent or extract on the bottom surface).

[0118] The total cleaning volume, or cleaning degree, of the wafer cassette during the cleaning process is obtained by accumulating the cleaning volume of each cleaning cycle; it should be noted that q nr Also includes with (d, nr The roughness, flatness, or coefficient of friction of the nth point on the inner surface of the wafer used in conjunction with the cleaning element also includes the roughness, flatness, or coefficient of friction of the inner surface of the wafer. In high-precision industrial systems, it is assumed that the roughness, flatness, or coefficient of friction of all points on the inner surface of the wafer housing is the same, and (d, nr The roughness, flatness, or coefficient of friction of a point on the inner surface of a wafer is linearly related to its properties; therefore, the roughness, flatness, or coefficient of friction of all points on the inner surface of the wafer can be ignored. However, when increasing the cleaning precision to the ppt level or even more extreme precision, the roughness, flatness, or coefficient of friction of the nth point on the inner surface of the wafer should be considered. This can be achieved by adjusting... nr The number of iterations r also considers the number of redundancy r' (not shown in the formula), direction, and magnitude, which in turn affect... (d, nr ) and s(v nr The method (r r') can achieve the same cleaning degree at n points on the inner surface of the wafer cell, and can realize real-time precise adjustment of the cleaning process to achieve uniform standard cleaning for all wafer cells.

[0119] Step 300: If the condition is met, stop the simulation. The condition includes at least a reduction in the cleaning volume increment.

[0120] The conditions include, q nr q nr-1 q nr-2 Satisfying formula (2):

[0121] a5*q nr-2 =q nr +a4*q nr-1 (2)

[0122] Where, q nr q is the amount of solvent used to clean point n during the r-th cleaning cycle. nr-1 q is the amount of solvent used to clean point n in the (r-1)th cleaning cycle. nr-2 This represents the amount of solvent used to clean the nth point in the (r-2)th cleaning cycle; a5 ranges from 0.01 to 0.2, and a4 ranges from 0.1 to 0.3; or, a4 and a5 are both positive numbers less than 1, satisfying a5 = 1 / 2 * a4. 2 That is, the cleaning volume q nr Compared to the previous two cleaning volumes q nr-1 q nr-2 The size relationship increases non-uniformly in sequence, and conversely, the cleaning amount q nr-2 q nr-1 q nr The size relationship decreases rapidly in sequence, and the cleaning amount q nr-2 q nr-1 The difference is at least a factor of 2. The cleaning process, including the optimal solvent volume d, the minimum number of cleaning cycles r, and / or the shortest actual cleaning path length, is simulated using formula (2) under these conditions. It should be noted that q... nr-2 q nr-1 q nr It can be the cleaning volume of continuous cleaning in the first state below, or q. nr-2 q nr-1 q nr It can be the cleaning volume of continuous cleaning in the first state below, or q. nr-2 q nr-1 q nr This could be the cleaning volume of continuous cleaning in the third state described below; where a certain element is the same in all states, such as the same surface area or solvent path, etc., q nr-2 q nr-1 q nr At least one of them is the amount of cleaning in continuous cleaning under different states, that is, the three states are executed in a cross-processing manner, but the simulation is still ended using formula (2), which will not be repeated below.

[0123] The above describes the cleaning process based on n points within the wafer cassette, such as... Figures 2-4 As shown below, the applicant introduces a cleaning process based on the inner surface of the wafer cell, which is based on the cleaning process of n points in the wafer cell. That is, the n points in the wafer cell are evenly distributed on each surface of the wafer cell, and the cleaning process is characterized by cleaning each surface and its combination. Taking a cuboid wafer cell as an example, the cleaning process also includes a first state of cleaning the four surfaces of the wafer cell and a second state of cleaning the remaining two surfaces of the wafer cell.

[0124] like Figure 2 As shown, the first state is that the wafer cassette 1200 is vertical (i.e., the top surface of the wafer cassette 1200 is the first surface and it is set horizontally) and rotates around the axis (the axis of the device mentioned throughout the text refers to the axis of the rotating shaft 1310) to clean the four surfaces (i.e., the four surfaces including the first surface, the opposite side of the first surface, i.e., the bottom surface, and the other two surfaces through which the solvent / extraction solution passes), as shown. Figure 3 As shown, the second state is that the wafer cassette is rotated horizontally (i.e., the top surface of the wafer cassette 1200 is the first surface and it is set vertically) to clean the two surfaces (i.e., the two surfaces other than the above four surfaces); the cleaning process satisfies formula (3):

[0125] ak=Q i / Q ii

[0126] Q i =q{a6* (d, i ), a7*s( i ), a8*e(d,s)}

[0127] Q ii =q{a6* (d, ii ), a7*s( ii ), a8*e(d,s)} (3)

[0128] Where 'a' ranges from 0.1 to 10, 'k' is the ratio of the total area of ​​the four faces cleaned in the first state to the total area of ​​the two faces cleaned in the second state, and 'Q' is the total area of ​​the faces cleaned in the second state. i Q represents the degree of cleaning in the first state. ii This refers to the degree of cleaning in the second state; the pressure f of the solvent on the inner surface of the wafer cassette is the solvent volume d and the solvent velocity. The function of the solvent's path s, where s is the solvent velocity. The effective amount of cleaning component e is a function of solvent amount d and distance s; a6, a7, and a8 are the weighted relationships between the pressure f of the solvent on the inner surface of the wafer cassette in the first state or the second state, the distance s traveled by the solvent, and the effective amount of cleaning component e, respectively, and a6+a7+a8=1 or the values ​​of a6, a7, and a8 are in the range of 0.1~10.

[0129] It should be noted that, without changing the solvent / extraction solution, the solvent will inevitably partially clean at least one of the four faces of the first state during the initial process of the first state and when the first state changes to the second state. Therefore, the degree of cleaning in the first state should include cleaning of the last face where the solvent remains and thus transitions.

[0130] It should be further noted that in both the first and second states, the surfaces cleaned by each other will partially or even completely clean each other's surfaces. Since this mutual cleaning is not the primary cleaning in each state, it can be addressed through s( i ), e(d,s) are adjusted; details are as follows. In the first state, the solvent inevitably cleans parts of the two faces to be cleaned in the second state that are adjacent to the four faces cleaned in the first state during the initial, middle (due to excessive speed, etc.) or final stages. Similarly, in the second state (where two faces are cleaned separately and swayed or rocked around the axis in a small range, such as when the swaying or rocking angle is less than 90 degrees), the solvent inevitably cleans the entire face or part of the four faces cleaned in the first state that are adjacent to the two faces cleaned in the second state during the initial, middle (due to excessive speed, or transition between two faces, etc.) or final stages. Discussing different cases, if the first state is executed before the second state, there exists e(d, s( i ))≥ e(d, s( ii Therefore, s( ii ) ≥ s( i The second state aims to increase the cleaning time or distance, ensuring that the overall cleaning level is the same for each surface cleaned in both states. For example, a 360-degree rotation around the axis in the second state would completely clean two surfaces in the first state. Therefore, the cleaning of these two surfaces can be reduced in advance in the first state, such as by gently shaking or swaying the other two surfaces around the axis at angles below 90 degrees. If the second state is executed before the first state, e(d,s(v) i ))≤e(d,s(v ii Therefore, s( ii )≤s( i The first state aims to clean more time or distance, so that the overall cleaning degree is the same for each cleaned surface in both the first and second states. For example, if a 360-degree rotation around the axis is used in the second state, the two surfaces in the first state will be completely cleaned. Therefore, the cleaning of these two surfaces is reduced in the first state. For example, if the other two surfaces in the first state are shaken or swayed around the axis in a small range, such as an angle of less than 90 degrees, the cleaning of these two surfaces in the second state will be more effective. i ))≤e(d,s(v ii Therefore, the first state has s( ) for the cleaning of the other two faces. i ) pre2sides Much smaller than s of the other two faces i ) post2sides The specific application details will not be elaborated here. Among them, appropriate measures should be taken. (d, i ), s( i ), e(d,s) and especially the solvent amount d, both the first state and the second state can fully clean all edges, and can achieve the same degree of cleaning for all edges and all six faces.

[0131] In other embodiments, such as Figure 4 As shown, based on formula (3), due to the lack of appropriate (d, i ), s( i The cleaning process also includes a third state of cleaning a predetermined region including the edges, where the first and second states are actually performed before the third state, since all edges are cleaned in the first and second states, i.e., e(d,s) and especially the solvent amount d. iii ))≤e(d,s(v i )) and e(d,s(v iii ))≤e(d,s(v ii Even so, the duration or distance of the third state is less than the duration and distance of the second state or the first state, i.e., s(v iii )≤s(v i ) and s(v iii ))≤s(v ii ).

[0132] It should be noted that, as Figure 3As shown, in the second state described above, the wafer cassette has only one initial rotation position; the intermediate rotation positions and the final rotation position are also the same as the initial rotation position. Figure 2 and Figure 4 As shown, the wafer cassette has several initial rotation positions, several intermediate rotation positions, and several final rotation positions in the first and third states. Therefore, the different initial, intermediate, and final rotation positions in the first and second states can be precisely controlled in real time using formula (1) or formula (3) to ensure that the cleaning degree of each point on the inner surface of the wafer cassette is the same. The cleaning process including the minimum solvent amount d and the shortest actual length is simulated. This cleaning path is composed of paths between the initial rotation positions, all intermediate rotation positions, and all final rotation positions in the above states, which are simulated and selected respectively. It should be noted that the cleaning path refers to the fact that the first and second states can be executed multiple times and can be executed in an alternating order, such as executing the first state, then the second state, then the first state, then the second state, and so on. The relationship between the various formulas should change accordingly or sequentially according to the alternating order to achieve the same cleaning degree of each point in the wafer cassette. Similarly, the first, second, and third states can be executed multiple times, and their order can be alternating. For example, the first, second, and third states can be executed sequentially, such as the first, second, and third states, the first, the first, the third, and the second states, and so on. The relationship between the various formulas should change accordingly or sequentially according to the alternating order, so as to achieve the same degree of cleaning at each point in the wafer cell.

[0133] In this embodiment, in the first state, the second state, or the third state, a point on the wafer cassette body is used as the driving point for rotation, that is, the rotation axis 1310 or a point directly connected to the wafer cassette body by the connecting shaft 1313. In this case, some simulated cleaning paths are more complex and speed changes can easily damage the wafer cassette shell. Therefore, in another embodiment, the wafer cassette 1200 rotates inside a container (not shown); or, the wafer cassette 1200 is connected and rotates through its own components.

[0134] The method for simulating contaminant cleaning inside a wafer cassette proposed in this invention has the following advantages: it provides a method for extracting / cleaning contaminants inside a wafer cassette that includes the minimum amount of solvent, the minimum time, or the shortest cleaning process. It has low solvent / extraction liquid consumption, saves costs, and enables real-time and precise adjustment of the cleaning process, achieving a uniform standard for cleaning contaminants inside all wafer cassettes.

[0135] A method for extracting contaminants within a wafer cassette based on the above simulation is also provided, such as... Figures 1-4 , Figures 6a-6f As shown, it includes:

[0136] Step S1: Add solvent into wafer cell 1200, the optimal solvent amount d obtained from the above simulation. ex For simplicity, the optimal solvent amount is still denoted as d. The volume of solvent amount d should not exceed 50% of the volume of the wafer cassette 1200, and the solvent can completely immerse the largest surface of the wafer cassette 1200. The volume of solvent amount d is 5~20% of the volume of the wafer cassette 1200.

[0137] Step S2: As Figure 2 As shown, when adjusted to the first state, the wafer cassette 1200 is horizontal and upward with the first surface facing upward. Preferably, the first surface is the top surface of the wafer cassette 1200. The wafer cassette 1200 rotates around the axis to clean the four surfaces including the first surface.

[0138] Step S3: As Figure 3 As shown, adjust to the second state so that the first surface is vertical, and rotate the wafer cassette 1200 around the axis to clean the remaining two surfaces:

[0139] like Figure 4 As shown, it also includes step S4: adjusting to the third state, tilting the first surface, and rotating the wafer cassette around the axis to clean the predetermined area;

[0140] It may also include step S5: removing the solvent, analyzing and calculating the contaminant content level;

[0141] The first state and the third state have several initial rotation positions, and the third state has multiple intermediate rotation positions. The first state, the second state, and the third state make the cleaning degree of n points on the inner surface of the wafer cell the same.

[0142] The cleaning process includes steps S2, S3, and S4, each executed once, in any combination of S2, S3, and S4; or, the cleaning process includes any combination of steps S2, S3, and S4, each executed multiple times. It should be noted that, for example... Figure 3 As shown, in the second state described above, the wafer cassette has only one initial rotation position; the intermediate rotation positions and the final rotation position are also the same as the initial rotation position. Figure 2 and Figure 4As shown, the wafer cell has several initial rotation positions, several intermediate rotation positions and several final rotation positions in the first state and the third state, respectively. Therefore, the different initial, intermediate and final rotation positions in the first state and the second state can be precisely controlled in real time by formula (1) or formula (3) to simulate and obtain the cleaning process. The cleaning process includes the cleaning process with the minimum solvent amount d and the shortest actual length cleaning path. The cleaning path is composed of the paths between the initial rotation positions, all intermediate rotation positions and all final rotation positions in the above states, respectively, so that the cleaning degree of each point on the inner surface of the wafer cell is the same.

[0143] Among them, the cleaning process of the nth point on the inner surface of the wafer cell 1200 after the rth cleaning makes the above first state and second state satisfy formula (1):

[0144] Q nr = q nr {a1* (d, nr ), a2*s(v nr ,r, r'), a3*e(d,r,r')}

[0145] Q 1r =Q 2r =Q 3r =….Q nr (1)

[0146] Where r is the number of washes, and r is a natural number greater than 2, e(d,r,r') <e(d,r-1,r-1’)。q nr q is the amount of solvent used to clean the nth point during the r-th cleaning cycle. nr It is a functional relationship between the pressure f at point n during the r-th cleaning of the solvent, the distance s of the solvent through point n, and the effective amount e of the cleaning component at point n during the r-th cleaning of the solvent. f is the solvent quantity d and the velocity v during the r-th cleaning (also considering the redundancy r', not shown in the formula). nr The function s is the velocity v at the r-th time (also considering the redundancy r', not shown in the formula). nre is a function of the number of cleaning cycles r and the redundancy r', where e is a function of the solvent volume d, the number of cleaning cycles r, and the redundancy r'. The redundancy r' can be on the order of magnitude lower than the number of cleaning cycles r, where a single cleaning cycle r is counted as 1, and the redundancy r' is a positive number less than 1, such as 0.1. Alternatively, the redundancy r' can be on the order of magnitude higher than the number of cleaning cycles r, where a single cleaning cycle r is counted as 1, and the redundancy r' is a positive number greater than 1, such as 10 or 10.1. The redundancy is crucial for adjusting the additional cleaning process caused by the loss of effective solvent components during the cleaning process. If there is no loss of effective solvent components during the cleaning process, but only an increase in the concentration of contaminants in the solvent without affecting the cleaning effect, then r' is 0. If it affects the cleaning effect, then r' is not 0. a1, a2, and a3 represent the weighted relationships between the pressure f at point n in the r-th cleaning cycle, the distance s traveled by the solvent through point n, and the effective amount e of the cleaning component at point n in the r-th cleaning cycle, respectively. a1 + a2 + a3 = 1, or the values ​​of a1, a2, and a3 range from 0.1 to 10. The relationship or range of a1, a2, and a3 is used to adjust... (d, nr ), s(v nr ,r r'), e(d,r,r') for q nr Or Q nr The overall contribution is as follows: a1=0 during a uniform pressure cleaning process; a2=0 when the solvent passing through each point at a certain speed is strictly controlled (i.e., the solvent speed * time passing through each point is the same); a3=0 when the concentration (i.e., the proportion of effective cleaning components) in the solvent (or extract) within the wafer cassette is controlled and stabilized in real time. Preferably, the number of cleaning cycles r (also considering the number of cycles for redundancy r', not shown in the formula) includes at least the number of solvent cleaning cycles. The overall process largely adopts a standardized, cyclical cleaning process, supplemented by non-cyclic processes to clean areas where the same cleaning degree is not achieved during the cyclic cleaning, so that the cleaning degree Q of n points on the inner surface of the wafer cassette is achieved. nr Same. In some cases, such as when the contaminant level on the top surface of the wafer cell is less sensitive, the number of cleaning cycles r (also considering the number of cycles of redundancy r', not shown in the formula) is the number of cycles, i.e., thoroughly cleaning the four surfaces adjacent to the top surface using specific cyclic cleaning activities (such as rotating around the central axis of the top surface), and thoroughly cleaning the bottom surface opposite the top surface using specific cyclic cleaning activities (such as uniformly shaking to barely cover the solvent or extract on the bottom surface). As described in the simulation process, if a suitable cyclic cleaning activity is not performed according to formula (3), (d, i ), s( i), e(d,s), and especially solvent amount d or cleaning processes that do not require a third state (i.e., solvent amount d that does not require a third state). not3rdstatus and cleaning path s not3rdstatus Therefore, the cleaning process of the nth point on the inner surface of the wafer cell 1200 after the rth cleaning is such that the above first state, second state and third state satisfy formula (1) and formula (2), which will not be repeated here.

[0147] According to the simulation, q at n points on the inner surface of wafer cell 1200 nr q nr-1 q nr-2 The cleaning process ends when formula (2) is satisfied:

[0148] a5*q nr-2 =q nr +a4*q nr-1 (2)

[0149] Where, q nr q is the amount of solvent used to clean point n during the r-th cleaning cycle. nr-1 q is the amount of solvent used to clean point n in the (r-1)th cleaning cycle. nr-2 This represents the amount of solvent used to clean the nth point in the (r-2)th cleaning cycle; a5 ranges from 0.01 to 0.2, and a4 ranges from 0.1 to 0.3; or, a4 and a5 are both positive numbers less than 1, satisfying a5 = 1 / 2 * a4. 2 That is, the cleaning volume q nr Compared to the previous two cleaning volumes q nr-1 q nr-2 The size relationship increases non-uniformly in sequence, and conversely, the cleaning amount q nr-2 q nr-1 q nr The size relationship decreases rapidly in sequence, and the cleaning amount q nr-2 q nr-1 The difference is at least a factor of 2, and the simulation results include the optimal solvent amount d (or d mentioned above). ex The cleaning process with the fewest cleaning times r and / or the shortest actual length of the cleaning path satisfies formulas (1) and (2).

[0150] In embodiments where a third state of the cleaning process is required, such as Figure 4 As shown, the predetermined region includes at least edges such as L1 and L2, and / or a portion of the face formed by the edges.

[0151] In this embodiment, as Figure 2 As shown, in step S1, with the first surface (top surface) of the wafer cassette 1200 facing upwards, solvent is added into the wafer cassette, and the amount of solvent is at least enough to submerge the bottom surface opposite to the first surface, or at least to submerge the edge of the bottom surface opposite to the first surface.

[0152] like Figure 2 and Figure 3 As shown, the duration of the first state and the second state is related to the area to be cleaned. The first state is that the wafer cassette rotates vertically to clean the four surfaces, and the second state is that the wafer cassette rotates horizontally to clean the two surfaces; the cleaning process satisfies formula (3):

[0153] ak=Q i / Q ii

[0154] Q i =q{a6* (d, i ), a7*s( i ), a8*e(d,s)}

[0155] Q ii =q{a6* (d, ii ), a7*s( ii ), a8*e(d,s)} (3)

[0156] Where 'a' ranges from 0.1 to 10, 'k' is the ratio of the total area of ​​the four faces cleaned in the first state to the total area of ​​the two faces cleaned in the second state, and 'Q' is the total area of ​​the faces cleaned in the second state. i Q represents the degree of cleaning in the first state. ii This refers to the degree of cleaning in the second state; the pressure f on the solvent surface is the solvent volume d and the solvent velocity. The function of the solvent's path s, where s is the solvent velocity. The effective amount of cleaning component e is a function of solvent amount d and distance s; a6, a7, and a8 are the weighted relationships between the pressure f of the solvent opposite the first state or the second state, the distance s traveled by the solvent, and the effective amount of cleaning component e, respectively, and a6+a7+a8=1 or the values ​​of a6, a7, and a8 are in the range of 0.1~10.

[0157] It should be noted that, without changing the solvent / extraction solution, the solvent will inevitably partially clean at least one of the four faces of the first state during the initial process of the first state and when the first state changes to the second state. Therefore, the degree of cleaning in the first state should include cleaning of the last face where the solvent remains and thus transitions.

[0158] It should be further noted that in both the first and second states, the surfaces cleaned by each other will partially or even completely clean each other's surfaces. Since this mutual cleaning is not the primary cleaning in each state, it can be addressed through s( i ), e(d,s) are adjusted; details are as follows. In the first state, the solvent inevitably cleans a portion of the two surfaces cleaned in the first state that are adjacent to the four surfaces cleaned in the first state during the initial, middle (due to excessive speed, etc.) or final stages. Similarly, in the second state (where two surfaces are cleaned separately and swayed or rocked around the axis in a small range, such as when the swaying or rocking angle is less than 90 degrees), the solvent inevitably cleans the entire surface or a portion of the four surfaces cleaned in the first state that are adjacent to the two surfaces cleaned in the second state during the initial, middle (due to excessive speed, or when transferring between two surfaces, etc.) or final stages. Discussing different cases, if the first state is executed before the second state, that is, step S2 is executed before step S3, there exists e(d,s) i ))≥ e(d, s( ii Therefore, s( ii ) ≥ s( i The second state aims to increase the cleaning time or distance, ensuring that the overall cleaning level is the same for each surface cleaned in both states. For example, a 360-degree rotation around the axis in the second state will completely clean two surfaces in the first state. Therefore, the cleaning of these two surfaces can be reduced in advance in the first state, such as by gently shaking or swaying the other two surfaces around the axis at a small angle of less than 90 degrees. If the second state is executed before the first state, i.e., step S3 is executed before step S2, e(d,s(v) i ))≤e(d,s(v ii Therefore, s( ii )≤s( i The first state aims to clean more time or distance, so that the overall cleaning degree is the same for each cleaned surface in both the first and second states. For example, if a 360-degree rotation around the axis is used in the second state, the two surfaces in the first state will be completely cleaned. Therefore, the cleaning of these two surfaces is reduced in the first state. For example, if the other two surfaces in the first state are shaken or swayed around the axis in a small range, such as an angle of less than 90 degrees, the cleaning of these two surfaces in the second state will be more effective. i ))≤e(d,s(v ii Therefore, the first state has s( ) for the cleaning of the other two faces. i ) pre2sides Much smaller than s of the other two faces i ) post2sides The specific application details will not be elaborated here. Among them, appropriate measures should be taken. (d, i ), s( i ), e(d,s) and especially the solvent amount d, both the first state and the second state can fully clean all edges, and can achieve the same degree of cleaning for all edges and all six faces.

[0159] In other embodiments, such as Figure 4 As shown, formula (3) fails to take appropriate measures (d, i ), s( i The cleaning process also includes a third state of cleaning a predetermined region including the edges, where the first and second states are actually performed before the third state, since all edges are cleaned in the first and second states, i.e., e(d,s) and especially the solvent amount d. iii ))≤e(d,s(v i )) and e(d,s(v iii ))≤e(d,s(v ii Even so, the duration or distance of the third state is less than the duration and distance of the second state or the first state, i.e., s(v iii )≤s(v i ) and s(v iii ))≤s(v ii ).

[0160] It should be noted that, as Figure 3 As shown, in the second state described above, the wafer cassette has only one initial rotation position; the intermediate rotation positions and the final rotation position are also the same as the initial rotation position. Figure 2 and Figure 4As shown, the wafer cassette has several initial rotation positions, several intermediate rotation positions, and several final rotation positions in the first and third states. Therefore, the different initial, intermediate, and final rotation positions in the first and second states can be precisely controlled in real time by a program or formula (1) or formula (3) to ensure that the cleaning degree of each point on the inner surface of the wafer cassette is the same. The cleaning process obtained by simulation, including the minimum solvent amount d and the cleaning path with the shortest actual length, satisfies formulas (1) and (2) to perform cleaning. The cleaning path is composed of simulated selections from the initial rotation positions, all intermediate rotation positions, and all final rotation positions in the above states, and is formed by the combination of paths between each position. It should be noted that the cleaning path refers to the fact that the first and second states can be executed multiple times and can be executed in an alternating order, such as executing the first state, then the second state, then the first state, then the second state, and so on. The relationship between the above formulas should be changed accordingly or sequentially according to the alternating order to achieve the same cleaning degree of each point in the wafer cassette. Similarly, the first, second, and third states can be executed multiple times, and their order can be alternating. For example, the first, second, and third states can be executed sequentially, such as the first, second, and third states, the first, the first, the third, and the second states, and so on. The relationship between the various formulas should change accordingly or sequentially according to the alternating order, so as to achieve the same degree of cleaning at each point in the wafer cell.

[0161] When the cleaning / extraction active ingredients in the solvent only promote the dissolution of contaminants, meaning only the concentration of dissolved contaminants increases while the effective components of the solvent do not decrease, then a6=a8=0. The solvent travels the same distance in the first state and the second state, ensuring that the cleaning degree at n points on the inner surface of the wafer cassette is the same. The cleaning degree Q in the first state is... i Second state cleaning degree Q ii Equal can be represented as:

[0162] Q i =s( i )=∫ i t i dt、

[0163] Q ii =s( ii )=∫ ii t ii dt;

[0164] Among them, s( i ), s( ii These represent the distances traveled by the solvent in the first and second states, respectively. i , ii The t values ​​represent the solvent velocities in the first and second states, respectively. i t ii These are the durations of the first state and the second state, respectively.

[0165] This invention provides a method for extracting contaminants inside wafer cassettes. It uses low amounts of solvent / extraction solution, saves costs, and enables real-time and precise adjustment of the cleaning process, achieving a uniform cleaning standard for all wafer cassettes.

[0166] To achieve the above-mentioned extraction and cleaning method, the applicant also provides an apparatus for extracting contaminants from wafer cassettes, such as... Figures 2-4 , Figures 6a-6f As shown, it includes a controller (not shown), a power unit 1000 controlled by the controller, a rotating shaft 1310 connected to the power unit 1000, and a connecting shaft 1313; characterized in that it further includes,

[0167] A universal joint 1320 is provided for the connecting shaft 1313 to slide inside in order to control the connecting shaft 1313 to freely switch directions in the hemispherical direction;

[0168] The connecting shaft 1313 connects to the wafer cassette 1200, and the rotation of the rotating shaft 1310 synchronously or asynchronously drives the universal joint 1320 to rotate, thereby causing the wafer cassette 1200 to rotate around the axis of the rotating shaft 1310. The universal joint 1320 includes: a vertical groove 1321 to control the connecting shaft 1313 to slide vertically to achieve a first state of rotating the wafer cassette 1200; a horizontal groove 1323 to control the connecting shaft 1313 to slide horizontally to achieve a second state of rotating the wafer cassette 1200; and an inclined groove 1322 to control the connecting shaft 1313 to slide in an inclined direction to achieve a third state of rotating the wafer cassette 1200. The vertical groove 1321 is a single line, the horizontal groove 1323 is a single hole at the center, and the inclined groove 1322... There are 2 to 10 inclined slots 1322. The inclined slots 1322 are evenly distributed to evenly adjust the tilt angle of the connecting shaft 1313 when it slides in the adjacent inclined slots 1322. For example, with 4 inclined slots 1322, the angles θ of the axes of the connecting shaft 1313 and the rotating shaft 1310 that are sequentially drawn into the inclined slots 1322 from the periphery to the center of the vertical slot 1321 are 90 degrees, 72 degrees, 54 degrees, 36 degrees and 18 degrees respectively. The number of inclined slots 1322 can also be set by evenly dividing the acute angle of the diagonal of the wafer box 1200 by 90 degrees. The applicant will not elaborate on this here.

[0169] like Figure 2As shown, in the first state, the wafer cassette 1200 is horizontal and upward with the first surface, i.e. the top surface, and the wafer cassette 1200 rotates around the axis of the rotation axis 1310 to clean the four surfaces including the first surface.

[0170] like Figure 3 As shown, the second state is to make the first surface vertical, and rotate the wafer cassette 1200 around the axis of the rotation axis 1310 to clean the remaining two surfaces;

[0171] like Figure 4 As shown, the third state is to tilt the first surface and rotate the wafer cassette 1200 around the axis of the rotation axis 1310 to clean a predetermined area.

[0172] like Figure 6a and Figure 6c As shown, the first-state wafer cassette 1200 has several initial rotation positions (i.e., the position of the connecting shaft 1313) in the vertical groove 1321, and the initial rotation position can be an intermediate rotation position and an end rotation position in the first state process, that is, the first state has multiple intermediate rotation positions and end rotation positions. The third-state wafer cassette 1200 has several initial rotation positions (such as the position of the positioning structure 1325 that matches the shape of the connecting shaft 1313) in several inclined grooves 1322, and the initial rotation position can be an intermediate rotation position and an end rotation position in the third state process, that is, the third state has multiple intermediate rotation positions and end rotation positions. The second-state wafer cassette 1200 has only one initial rotation position (i.e., the position of the connecting shaft 1313) in the horizontal groove 1323. Similarly, the second state process can have only one intermediate rotation position and end rotation position, 1323. Therefore, by using different initial, intermediate, and end rotation positions in the first and second states, the cleaning degree of n points on the inner surface of the wafer cassette can be precisely controlled in real time by formula (1) or formula (3) to make the cleaning degree of n points on the inner surface of the wafer cassette the same. The cleaning process uses a cleaning path that includes the minimum solvent volume *d* and the shortest actual length. This cleaning path is formed by selecting at least one of the initial rotation position, all intermediate rotation positions, and all final rotation positions from the aforementioned states, and combining the pathways between these positions. It should be noted that the cleaning path refers to the fact that the first and second states can be executed multiple times, and their order can be alternating, such as executing the first state, then the second state, then the first state, then the second state… The relationships between the various formulas should change accordingly or sequentially based on this alternating order to achieve the same cleaning degree at all points within the wafer cassette. Similarly, the first, second, and third states can be executed multiple times, and their order can be alternating, such as executing the first state, second state, third state, second state, first state, first state, third state, second state… The relationships between the various formulas should change accordingly or sequentially based on this alternating order to achieve the same cleaning degree at n points within the wafer cassette.

[0173] like Figure 6b and Figure 6c As shown, the universal joint 1320 is semi-circular or plate-shaped. The universal joint 1320 also includes a plurality of connecting grooves 1324 to connect the vertical groove 1321, the horizontal groove 1323 and the inclined groove 1322.

[0174] like Figure 6c As shown, the vertical groove 1321, the horizontal groove 1323, or the inclined groove 1322 includes a positioning structure 1325 that cooperates with the connecting shaft 1313 to fix the direction.

[0175] like Figures 6d to 6f As shown, the circular opening positioning structure 1325 includes a positioning component 13251 located at the bottom of the positioning structure 1325. A positioning accessory 13131 is provided on the connecting shaft 1313 at a portion corresponding to the positioning component 13251. Preferably, the positioning component 13251 is a laterally elastic snap ring structure, and the positioning accessory 13131 is a groove structure that mates with the snap ring structure, having a portion smaller than the lateral diameter of the snap ring structure in its released state. When the connecting shaft 1313 connects to the wafer cassette 1200, which rotates around the axis of the rotation shaft 1310 in a circular motion, or when the positioning structure 1325 provides centrifugal force at a certain speed, the wafer cassette 1200 can be positioned... The snap ring structure is pressed into the groove structure to achieve positioning. When adjusting the initial, intermediate, and final rotation positions of the connecting shaft 1313 in the first, second, and third states as described above, when the wafer cassette 1200 is at the top of the circumference, the speed is reduced. The weight of the wafer cassette 1200 drives the connecting shaft 1313 in the opposite x direction, causing the snap ring structure to be laterally compressed and disengaged from the groove structure. This allows the wafer cassette to re-enter the vertical groove 1321, horizontal groove 1323, or inclined groove 1322 and move in the positive or negative y direction. The cleaning continues according to the cleaning path in the extraction method described above, which will not be elaborated further here.

[0176] In one embodiment, the other end of the connecting shaft 1313 connected to the wafer cassette 1200 is fixed to the center position of the universal joint 1320. The initial, intermediate, and final rotational positions of the wafer cassette 1200 in the first, second, and third states are adjusted solely by the speed of the wafer cassette 1200 driven by the rotating shaft 1310, the centrifugal force provided to the wafer cassette by the universal joint 1320, and the weight of the wafer cassette 1200 and the connecting shaft 1313 itself, so as to execute the cleaning path in the extraction method described above.

[0177] In another embodiment, such as Figure 6a and Figure 6bAs shown, the rotating part 1300 includes a control shaft 1311 and a control device 1312. The rotating shaft 1310 is a hollow structure to accommodate the control shaft 1311 and the control device 1312, and the three are coaxial. The control shaft 1311 is fixedly connected to the control device 1312. The control device 1312 is rotatably connected to the connecting shaft 1313 and allows the connecting shaft 1313 to freely change direction along the slot on the universal joint 1320 in the hemispherical space. The power unit 1000 provides a pulling force, a pushing force, or a rotating force to the control shaft 1311 as shown in the figure. When the power unit 1000 provides a pulling force to the left, the control shaft 1311 will drive the connecting shaft 1313 to slide from the vertical groove 1321 to the inclined groove 1322 and then to the horizontal groove 1323. When the power unit 1000 provides a pushing force to the right, the control shaft 1311 will drive the connecting shaft 1313 to move outward from its position in the universal joint 1320 when the pushing force is initiated, towards the inclined groove 1322 and the vertical groove 1321, until it reaches the control shaft 1323. When the universal joint 1323 reaches the center position of the universal joint 1320, the connecting shaft returns to the vertical slot 1321. At this time, the power unit 1000 can provide rotational force to the control axis 1311 to drive the connecting shaft 1313 to rotate in the vertical slot 1321. Since the wafer cassette 1200 and the connecting shaft 1313 themselves have weight, this provided rotational force should be an auxiliary force for rotation. The weight and the speed provided by the rotating shaft 1310 to the connecting shaft 1313 and even the wafer cassette 1200 through the universal joint 1320 should be used as much as possible to perform the above-mentioned cleaning path. It should be noted that when the connecting shaft 1313 slides out of the positioning structure 1325, the control axis 1311 can provide part of the rotational force as a supplement or assistance to the rotational force provided by the rotating shaft 1310, so as to avoid the connecting shaft 1313 failing to perform the cleaning of the relevant positions in the above-mentioned cleaning path under high speed. The applicant will not elaborate further here.

[0178] It should be noted that the rotating shaft 1310 may only serve as a fixing component for the universal joint 1320 and as a housing for the directional control shaft 1311 and the directional control unit 1312, without providing rotational force or rotational power to the connecting shaft 1313 or even the wafer cassette 1200 through the universal joint 1320 to execute the aforementioned cleaning path. The controller (not shown) only controls the directional control shaft 1311 to provide rotational force or rotational power to the connecting shaft 1313 to execute the aforementioned cleaning path. During this process, the rotating shaft 1310 and the universal joint 1320 may be driven by the connecting shaft 1313 to rotate around the axis, or they may not rotate.

[0179] Preferably, the predetermined region includes at least a ridge and / or a portion of both faces of the ridge.

[0180] like Figure 2 and Figure 3As shown, the duration of the first state and the second state is related to the area ratio of the cleaning. The first state is that the wafer cassette rotates vertically to clean the four faces, and the second state is that the wafer cassette rotates horizontally to clean the two faces; the controller uses a cleaning process that satisfies formula (3), that is, the controller uses a program including formula (3) so that the relationship between the degree of cleaning in the first state and the degree of cleaning in the second state is related to the area ratio of the cleaning:

[0181] ak=Q i / Q ii

[0182] Q i =q{a6* (d, i ), a7*s( i ), a8*e(d,s)}

[0183] Q ii =q{a6* (d, ii ), a7*s( ii ), a8*e(d,s)} (3)

[0184] Where 'a' ranges from 0.1 to 10, 'k' is the ratio of the total area of ​​the four faces cleaned in the first state to the total area of ​​the two faces cleaned in the second state, and 'Q' is the total area of ​​the faces cleaned in the second state. i Q represents the degree of cleaning in the first state. ii This refers to the degree of cleaning in the second state; the pressure f of the solvent on the inner surface of the wafer cassette is the solvent volume d and the solvent velocity. The function of the solvent's path s, where s is the solvent velocity. The effective amount of cleaning component e is a function of solvent amount d and distance s; a6, a7, and a8 are the weighted relationships between the pressure f of the solvent on the inner surface of the wafer cassette in the first state or the second state, the distance s traveled by the solvent, and the effective amount of cleaning component e, respectively, and a6+a7+a8=1 or the values ​​of a6, a7, and a8 are in the range of 0.1~10.

[0185] It should be noted that, without changing the solvent / extraction solution, the solvent will inevitably partially clean at least one of the four faces of the first state during the initial process of the first state and when the first state changes to the second state. Therefore, the degree of cleaning in the first state should include cleaning of the last face where the solvent remains and thus transitions.

[0186] It should be further noted that in both the first and second states, the surfaces cleaned by each other will partially or even completely clean each other's surfaces. Since this mutual cleaning is not the primary cleaning in each state, it can be addressed through s( i ), e(d,s) are adjusted; details are as follows. In the first state, the solvent inevitably cleans a portion of the two surfaces cleaned in the first state that are adjacent to the four surfaces cleaned in the first state during the initial, middle (due to excessive speed, etc.) or final stages. Similarly, in the second state (where two surfaces are cleaned separately and swayed or rocked around the axis in a small range, such as when the swaying or rocking angle is less than 90 degrees), the solvent inevitably cleans the entire surface or a portion of the four surfaces cleaned in the first state that are adjacent to the two surfaces cleaned in the second state during the initial, middle (due to excessive speed, or when transferring between two surfaces, etc.) or final stages. Discussing different cases, if the first state is executed before the second state, that is, step S2 is executed before step S3, there exists e(d,s) i ))≥ e(d, s( ii Therefore, s( ii ) ≥ s( i The second state aims to increase the cleaning time or distance, ensuring that the overall cleaning level is the same for each surface cleaned in both states. For example, a 360-degree rotation around the axis in the second state will completely clean two surfaces in the first state. Therefore, the cleaning of these two surfaces can be reduced in advance in the first state, such as by gently shaking or swaying the other two surfaces around the axis at a small angle of less than 90 degrees. If the second state is executed before the first state, i.e., step S3 is executed before step S2, e(d,s(v) i ))≤e(d,s(v ii Therefore, s( ii )≤s( i The first state aims to clean more time or distance, so that the overall cleaning degree is the same for each cleaned surface in both the first and second states. For example, if a 360-degree rotation around the axis is used in the second state, the two surfaces in the first state will be completely cleaned. Therefore, the cleaning of these two surfaces is reduced in the first state. For example, if the other two surfaces in the first state are shaken or swayed around the axis in a small range, such as an angle of less than 90 degrees, the cleaning of these two surfaces in the second state will be more effective. i ))≤e(d,s(v ii Therefore, the first state has s( ) for the cleaning of the other two faces. i ) pre2sides Much smaller than s of the other two faces i ) post2sides The specific application details will not be elaborated here. Among them, appropriate measures should be taken. (d, i ), s( i ), e(d,s) and especially the solvent amount d, both the first state and the second state can fully clean all edges, and can achieve the same degree of cleaning for all edges and all six faces.

[0187] In other embodiments, such as Figure 4 As shown, the controller uses a program based on formula (3) because it did not take appropriate (d, i ), s( i The controller controls the cleaning process, including a third state that cleans a predetermined area including the edges, and the first and second states are actually executed before the third state. Since all edges are cleaned in the first and second states, e(d,s) and especially the solvent amount d, the controller also controls the cleaning process, including a third state that cleans a predetermined area including the edges. iii ))≤e(d,s(v i )) and e(d,s(v iii ))≤e(d,s(v ii Even so, the duration or distance of the third state is less than the duration and distance of the second state or the first state, i.e., s(v iii )≤s(v i ) and s(v iii ))≤s(v ii ).

[0188] When the cleaning / extraction active ingredients in the solvent only promote the dissolution of contaminants, meaning only the concentration of dissolved contaminants increases while the effective components of the solvent do not decrease, then a6=a8=0. The solvent travels the same distance in the first state and the second state, ensuring that the cleaning degree at n points on the inner surface of the wafer cassette is the same. The cleaning degree Q in the first state is... i Second state cleaning degree Q ii Equal can be represented as:

[0189] Q i =s( i )=∫ i t i dt、

[0190] Q ii =s( ii )=∫ ii t ii dt;

[0191] Among them, s( i ), s( ii These represent the distances traveled by the solvent in the first and second states, respectively. i , ii The t values ​​represent the solvent velocities in the first and second states, respectively. i t ii These are the durations of the first state and the second state, respectively.

[0192] The controller controls the process so that the first and second states of the nth point on the inner surface of the wafer cassette 1200 after the rth cleaning process satisfy the formula (1).

[0193] Q nr = q nr {a1* (d, nr ), a2*s(v nr ,r, r'), a3*e(d,r,r')}

[0194] Q 1r =Q 2r =Q 3r =….Q nr (1)

[0195] Where r is the number of washes, and r is a natural number greater than 2, e(d,r,r') <e(d,r-1,r-1’)。q nr q is the amount of solvent used to clean the nth point during the r-th cleaning cycle. nr It is a functional relationship between the pressure f at point n during the r-th cleaning of the solvent, the distance s of the solvent through point n, and the effective amount e of the cleaning component at point n during the r-th cleaning of the solvent. f is the solvent quantity d and the velocity v during the r-th cleaning (also considering the redundancy r', not shown in the formula). nr The function s is the velocity v at the r-th time (also considering the redundancy r', not shown in the formula). nre is a function of the number of cleaning cycles r and the redundancy r', where e is a function of the solvent volume d, the number of cleaning cycles r, and the redundancy r'. The redundancy r' can be on the order of magnitude lower than the number of cleaning cycles r, where a single cleaning cycle r is counted as 1, and the redundancy r' is a positive number less than 1, such as 0.1. Alternatively, the redundancy r' can be on the order of magnitude higher than the number of cleaning cycles r, where a single cleaning cycle r is counted as 1, and the redundancy r' is a positive number greater than 1, such as 10 or 10.1. The redundancy is crucial for adjusting the additional cleaning process caused by the loss of effective solvent components during the cleaning process. If there is no loss of effective solvent components during the cleaning process, but only an increase in the concentration of contaminants in the solvent without affecting the cleaning effect, then r' is 0. If it affects the cleaning effect, then r' is not 0. a1, a2, and a3 represent the weighted relationships between the pressure f at point n in the r-th cleaning cycle, the distance s traveled by the solvent through point n, and the effective amount e of the cleaning component at point n in the r-th cleaning cycle, respectively. a1 + a2 + a3 = 1, or the values ​​of a1, a2, and a3 range from 0.1 to 10. The relationship or range of a1, a2, and a3 is used to adjust... (d, nr ), s(v nr ,r r'), e(d,r,r') for q nr Or Q nr The overall contribution is as follows: a1=0 during a uniform pressure cleaning process; a2=0 when the solvent passing through each point at a certain speed is strictly controlled (i.e., the solvent speed * time passing through each point is the same); a3=0 when the concentration (i.e., the proportion of effective cleaning components) in the solvent (or extract) within the wafer cassette is controlled and stabilized in real time. Preferably, the number of cleaning cycles r (also considering the number of cycles for redundancy r', not shown in the formula) includes at least the number of solvent cleaning cycles. The overall process largely adopts a standardized, cyclical cleaning process, supplemented by non-cyclic processes to clean areas where the same cleaning degree is not achieved during the cyclic cleaning, so that the cleaning degree Q of n points on the inner surface of the wafer cassette is achieved. nr Same. In some cases, such as when the contaminant level on the top surface of the wafer cell is less sensitive, the number of cleaning cycles r (also considering the number of cycles of redundancy r', not shown in the formula) is the number of cycles, i.e., thoroughly cleaning the four surfaces adjacent to the top surface using specific cyclic cleaning activities (such as rotating around the central axis of the top surface), and thoroughly cleaning the bottom surface opposite the top surface using specific cyclic cleaning activities (such as uniformly shaking to barely cover the solvent or extract on the bottom surface). As described in the simulation process, if a suitable cyclic cleaning activity is not performed according to formula (3), (d, i ), s( i), e(d,s), and especially solvent amount d or cleaning processes that do not require a third state (i.e., solvent amount d that does not require a third state). not3rdstatus and cleaning path s not3rdstatus Therefore, the cleaning process of the nth point on the inner surface of the wafer cell 1200 after the rth cleaning is such that the first state, the second state and the third state satisfy the formula (1) and the formula (2), which will not be repeated here.

[0196] q at n points on the inner surface of wafer cell 1200 nr q nr-1 q nr-2 The cleaning process ends when formula (2) is satisfied:

[0197] a5*q nr-2 =q nr +a4*q nr-1 (2)

[0198] Where, q nr q is the amount of solvent used to clean point n during the r-th cleaning cycle. nr-1 q is the amount of solvent used to clean point n in the (r-1)th cleaning cycle. nr-2 This represents the amount of solvent used to clean the nth point in the (r-2)th cleaning cycle; a5 ranges from 0.01 to 0.2, and a4 ranges from 0.1 to 0.3; or, a4 and a5 are both positive numbers less than 1, satisfying a5 = 1 / 2 * a4. 2 That is, the cleaning volume q nr Compared to the previous two cleaning volumes q nr-1 q nr-2 The size relationship increases non-uniformly in sequence, and conversely, the cleaning amount q nr-2 q nr-1 q nr The size relationship decreases rapidly in sequence, and the cleaning amount q nr-2 q nr-1 The difference is at least a factor of 2, where the simulated amount includes the optimal solvent quantity d (or d mentioned above). ex The cleaning process input formulas (1) and (2) are the minimum number of cleaning cycles r and / or the cleaning path with the shortest actual length.

[0199] In embodiments where a third state of the cleaning process is required, such as Figure 4 As shown, the predetermined region includes at least edges such as L1 and L2, and / or a portion of the face formed by the edges.

[0200] In one embodiment, the cleaning / extraction device further includes a support component 1100 that is fixedly connected to the power unit 1000 and has a vertical projected area and weight greater than all the structures described above. It should be noted that when the power unit 1000 is heavy enough and the height of the axis of the rotation shaft 1310 from the support surface is greater than the sum of the length of the connecting shaft 1313 and the diagonal length of the wafer cassette 1200, there is no need to set up a separate support component 1100, which will not be elaborated here.

[0201] This invention provides an apparatus for extracting contaminants inside wafer cassettes. It uses machinery and programs to replace manual labor and adjusts the cleaning process in real time and precisely according to the optimal cleaning path, achieving uniform standard cleaning for all wafer cassettes. Moreover, it uses less solvent / extraction solution, saving costs.

[0202] The above embodiments are merely illustrative of the principles and effects of the present invention and are not intended to limit the invention. Any person skilled in the art can modify or alter the above embodiments without departing from the spirit and scope of the present invention. Therefore, all equivalent modifications or alterations made by those skilled in the art without departing from the spirit and technical concept disclosed in the present invention should still be covered by the claims of the present invention.

Claims

1. An apparatus for extracting contaminants within a wafer cassette, comprising a controller, a power unit controlled by the controller, a rotating shaft, and a connecting shaft; characterized in that, It also includes, A universal joint that allows the connecting shaft to slide inward to control the connecting shaft to freely switch directions in a hemispherical direction; The connecting shaft is connected to the wafer cassette and driven by the power unit to rotate the wafer cassette around the axis of the rotating shaft; The gimbal includes: A vertical slot is provided to control the connecting shaft to slide in the vertical direction to achieve a first state of rotating the wafer cassette; the first state is that the wafer cassette is horizontal with a first surface and rotates about the axis. A horizontal groove is provided to control the connecting shaft to slide horizontally to achieve a second state of rotating the wafer cassette; the second state is that the first surface is vertical and the wafer cassette rotates around the axis. The rotating shaft is fixedly connected to the universal joint. The power device drives the rotating shaft to rotate around its axis and drives the universal joint and the connecting shaft located within the universal joint to rotate, thereby driving the wafer cassette to rotate around the axis; or, it includes a directional control shaft coaxial with the rotating shaft. The directional control shaft is connected to the connecting shaft and allows the connecting shaft to freely change direction within a hemispherical space. The power device drives the directional control shaft to rotate and drives the connecting shaft and even the wafer cassette to rotate around the axis. The controller controls the cleaning process to ensure that the relationship between the cleaning degree in the first state and the cleaning degree in the second state is related to the ratio of the area being cleaned; the cleaning process satisfies formula (3): and=Q i / Q ii Q i =q{a6* (d, i ), a7*s( i ), a8*e(d,s)} Q ii =q{a6* (d, ii ), a7*s( ii ), a8*e(d,s)} (3) Where 'a' ranges from 0.1 to 10, 'k' is the ratio of the cleaning area in the first state to that in the second state, 'Qi' is the cleaning amount in the first state, and 'Q' is the cleaning amount in the second state. ii This refers to the cleaning amount in the second state; the pressure f of the solvent on the inner surface of the wafer cassette is the solvent amount d and the solvent velocity. The function of the solvent's path s, where s is the solvent velocity. The effective amount of cleaning component e is a function of solvent amount d and distance s; a6, a7, and a8 are the weighted relationships between the pressure f of the solvent on the inner surface of the wafer cassette in the first state or the second state, the distance s traveled by the solvent, and the effective amount of cleaning component e, respectively, a6+a7+a8=1 or the values ​​of a6, a7, and a8 are in the range of 0.1~10, and q is a function of the pressure f of the solvent on the inner surface of the wafer cassette in the first state or the second state, the distance s traveled by the solvent, and the effective amount of cleaning component e.

2. The apparatus according to claim 1, characterized in that, The gimbal also includes, An inclined slot is used to control the connecting shaft to slide in the inclined direction to achieve a third state rotating wafer cassette; The third state is to tilt the first surface and rotate the wafer cassette around the axis to clean a predetermined area.

3. The apparatus according to claim 1, characterized in that, The gimbal is sheet-shaped or semi-circular.

4. The apparatus according to claim 1, characterized in that, The connecting shaft may rotate synchronously or asynchronously with the rotating shaft.

5. The apparatus according to claim 2, characterized in that, The vertical groove, the horizontal groove, or the inclined groove includes a positioning structure that cooperates with the connecting shaft to fix the direction.

6. The apparatus according to claim 2, characterized in that, The predetermined region includes at least a ridge and / or a portion of both faces of the ridge.

7. The apparatus according to claim 1, characterized in that, a6=a8=0, the solvent travels the same distance in the first state and the second state, and the cleaning degree Q in the first state is... i The degree of cleaning Q in the first state ii They can be represented as: Q i =s( i )=∫ i t i dt Q ii =s( ii )=∫ ii t ii dt Among them, s( i ), s( ii These represent the distances traveled by the solvent in the first and second states, respectively. i , ii These are the solvent velocities in the first and second states, respectively, t. i t ii These are the durations of the first state and the second state, respectively.

8. The apparatus according to claim 1, characterized in that, The first state is executed before the second state, e(d,s(v) i ))≥ e(d,s(v ii ));or, The second state is executed before the first state, e(d,s(v) i ))≤e(d,s(v ii )).

9. The apparatus according to claim 1, characterized in that, The controller controls the cleaning process of point n after the r-th cleaning to satisfy formula (1): Q nr = q nr {a1* (d, nr ), a2*s(v nr ,r,r’), a3*e(d,r,r’)} Q 1r =Q 2r =Q 3r =….Q nr (1) Where r is the number of washes, and r is a natural number greater than 2, e(d,r,r') <e(d,r-1,r-1’);q nr q is the amount of solvent used to clean the nth point during the r-th cleaning cycle. nr The relationship between the pressure f at point n during the r-th cleaning cycle, the distance s traveled by the solvent through point n, and the effective amount e of the cleaning component at point n during the r-th cleaning cycle is a function of the solvent volume d and the velocity v during the r-th cleaning cycle. nr The function s is the velocity v at the r-th time. nr The function of cleaning number r and cleaning number redundancy r' is given by e, which is a function of solvent amount d, cleaning number r and cleaning number redundancy r'. a1, a2, and a3 are the weighted relationships between the pressure f of the solvent at point n in the r-th cleaning, the distance s of the solvent through point n, and the effective amount e of the cleaning component at point n in the r-th cleaning, respectively. a1+a2+a3=1 or the values ​​of a1, a2, and a3 are in the range of 0.1~10. q nr q is the amount of solvent used to clean point n during the r-th cleaning cycle. nr-1 q is the amount of solvent used to clean point n in the (r-1)th cleaning cycle. nr-2 q is the amount of solvent used to clean the nth point during the (r-2)th cleaning cycle; nr q nr-1 q nr-2 The cleaning process ends when formula (2) is satisfied: a5*q nr-2 =q nr +a4*q nr-1 (2) Where a5 ranges from 0.01 to 0.2 and a4 ranges from 0.1 to 0.3; or, a4 and a5 are both positive numbers less than 1, satisfying a5 = 1 / 2 * a4. 2 .

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