Semiconductor test structures and their manufacturing methods

Abstract

This disclosure provides a semiconductor test structure and its manufacturing method. The manufacturing method includes: providing a semiconductor structure, the semiconductor structure including a doped layer and a metal layer located within the doped layer; forming at least one opening in the semiconductor structure, the opening exposing the metal layer; reacting the metal layer with a wet etching solution to remove the metal layer, thereby forming a cutout, wherein the wet etching solution enters the semiconductor structure through the opening; filling the cutout with a non-metallic material layer through the opening to form the semiconductor test structure; wherein the evaporation pressure of the metal layer is greater than the evaporation pressure of the non-metallic material layer. This technical solution avoids the limitation of metals requiring extremely high electric fields to evaporate, which hinders the application of atomic probe tomography (APT) in semiconductor test structures.

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