Integrated circuit packaging products and integrated circuit packaging methods

Abstract

An integrated circuit packaging product and an integrated circuit packaging method. The integrated circuit packaging product includes a chassis, a silver-plated layer, an integrated circuit chip, and a plurality of protrusions. The chassis includes a first area and a second area. The silver-plated layer is coated on the first area. The integrated circuit chip is arranged on the second area. The silver-plated layer surrounds the integrated circuit chip. The plurality of protrusions are arranged on the silver-plated layer. The integrated circuit packaging method includes coating the silver-plated layer on the first area of ​​the chassis; arranging the integrated circuit chip in the second area of ​​the chassis; and arranging a plurality of protrusions on the silver-plated layer.

Description

Technical Field

[0001] The present application relates to the semiconductor field, and more specifically, to an integrated circuit packaging product and an integrated circuit packaging method. Background Art

[0002] In the prior art, when an integrated circuit product is packaged by injection molding, the resin package body is heated at high temperature and combined with the copper chassis. Due to the different thermal expansion coefficients of the resin package body and the copper chassis, the combination is poor and the integrated circuit product may be delaminated. Summary of the invention

[0003] In view of this, the present application proposes an integrated circuit packaging product and an integrated circuit packaging method to solve the above problems.

[0004] According to one embodiment of the present application, an integrated circuit packaging product is provided. The integrated circuit packaging product includes a chassis, a silver-plated layer, an integrated circuit chip, and a plurality of protrusions. The chassis includes a first area and a second area. The silver-plated layer is coated on the first area. The integrated circuit chip is arranged on the second area. The silver-plated layer surrounds the integrated circuit chip. The plurality of protrusions are arranged on the silver-plated layer.

[0005] According to an embodiment of the present application, one of the plurality of protrusions includes protruding particles.

[0006] According to an embodiment of the present application, one of the plurality of protrusions includes a plurality of stacked protruding particles.

[0007] According to an embodiment of the present application, the protruding particles are connected with connecting wires.

[0008] According to an embodiment of the present application, the other end of the connecting line is connected to another of the protruding particles.

[0009] According to an embodiment of the present application, the other end of the connecting wire is connected to the upper surface of the silver-plated layer.

[0010] According to an embodiment of the present application, the integrated circuit packaging product further includes a plurality of pins and a plastic package. The plurality of pins are electrically connected to the integrated circuit chip. The plastic package covers the chassis and the integrated circuit chip.

[0011] According to an embodiment of the present application, an integrated circuit packaging method is provided, which includes coating a silver-plated layer on a first area of ​​a chassis, arranging an integrated circuit chip on a second area of ​​the chassis, and arranging a plurality of protrusions on the silver-plated layer.

[0012] According to an embodiment of the present application, disposing the plurality of protrusions on the silver-plated layer includes: disposing protruding particles on the silver-plated layer through solder balls.

[0013] According to an embodiment of the present application, disposing the plurality of protrusions on the silver-plated layer further comprises: disposing connecting wires on the protruding particles.

[0014] According to an embodiment of the present application, disposing the plurality of protrusions on the silver-plated layer further comprises: connecting the other end of the connecting wire to another protruding particle or the upper surface of the silver-plated layer.

[0015] In the integrated circuit packaging product and integrated circuit packaging method proposed in the present application, the surface roughness of the silver-plated layer is increased by adding protrusions on the silver-plated layer. In this way, when the integrated circuit packaging product is to be packaged by injection molding, the contact area between the chassis and the plastic package body can be effectively increased by the protrusions, thereby increasing the bonding force between the chassis and the plastic package body and solving the delamination problem between the chassis and the plastic package body. BRIEF DESCRIPTION OF THE DRAWINGS

[0016] The accompanying drawings are used to provide a further understanding of the present application and constitute a part of the specification. Together with the following specific embodiments, they are used to explain the present application but do not constitute a limitation to the present application. In the accompanying drawings:

[0017] Figure 1A and Figure 1B The top cross-sectional view and the side cross-sectional view of an integrated circuit packaging product according to an embodiment of the present application are respectively demonstrated.

[0018] Figure 2 A schematic diagram illustrating the distribution of protrusions on a silver-plated layer according to an embodiment of the present application.

[0019] Figure 3 A schematic diagram illustrating a protrusion according to an embodiment of the present application.

[0020] Figure 4 A schematic diagram illustrating the manufacturing of a protrusion according to an embodiment of the present application.

[0021] Figure 5 A schematic diagram illustrating protruding particles according to an embodiment of the present application.

[0022] Figure 6 A method flow chart illustrating an integrated circuit packaging method according to an embodiment of the present application. DETAILED DESCRIPTION

[0023] The following disclosure provides a variety of implementations or illustrations that can be used to implement different features of the present disclosure. The specific examples of components and configurations described below are used to simplify the present disclosure. As can be imagined, these descriptions are only illustrative and are not intended to limit the present disclosure. For example, in the description below, forming a first feature on or above a second feature may include certain embodiments in which the first and second features are directly in contact with each other; and may also include certain embodiments in which additional components are formed between the above-mentioned first and second features, so that the first and second features may not be in direct contact. In addition, the present disclosure may reuse component symbols and / or labels in multiple embodiments. Such repetition is based on the purpose of simplicity and clarity, and does not itself represent the relationship between the different embodiments and / or configurations discussed.

[0024] Furthermore, spatially relative terms such as "below," "below," "below," "above," and the like may be used herein to facilitate description of the relationship between one component or feature shown in the figure relative to another or more components or features. These spatially relative terms are intended to encompass a variety of different orientations of the device during use or operation in addition to the orientation shown in the figure. The device may be placed in other orientations (e.g., rotated 90 degrees or in other orientations), and these spatially relative descriptive terms should be interpreted accordingly.

[0025] Although the numerical ranges and parameters used to define the broader scope of the present application are approximate values, the relevant numerical values ​​in the specific embodiments have been presented as accurately as possible. However, any numerical value inherently inevitably contains standard deviations due to individual test methods. Here, "about" generally refers to the actual value within plus or minus 10%, 5%, 1% or 0.5% of a specific value or range. Alternatively, the term "about" means that the actual value falls within the acceptable standard error of the mean value, depending on the consideration of a person with ordinary knowledge in the technical field to which the present application belongs. It should be understood that, except for the experimental examples, or unless otherwise explicitly stated, all ranges, quantities, values ​​and percentages used herein (for example, to describe the amount of material used, the length of time, temperature, operating conditions, quantitative ratios and other similar ones) are modified by "about". Therefore, unless otherwise stated to the contrary, the numerical parameters disclosed in this specification and the attached claims are all approximate values ​​and can be changed as needed. At least these numerical parameters should be understood as the number of significant digits indicated and the values ​​obtained by applying the general rounding method. Herein, numerical ranges are expressed from one endpoint to another endpoint or between two endpoints; unless otherwise stated, the numerical ranges described herein include the endpoints.

[0026] Figure 1A and Figure 1BThe top cross-sectional view and the side cross-sectional view of the integrated circuit package product 1 according to an embodiment of the present application are respectively demonstrated. In some embodiments, the integrated circuit package product 1 can be an integrated circuit product of a type having a lead frame such as QFN or SOP. In some embodiments, the integrated circuit package product 1 includes a chassis 10, a silver-plated layer 11, an integrated circuit chip 12, and a plurality of protrusions 13.

[0027] In some embodiments, the chassis 10 is a lead frame for supporting an integrated circuit chip 12. In some embodiments, the chassis 10 is substantially located at the bottom center of the integrated circuit package product 1. In some embodiments, the chassis 10 is substantially made of a conductive material such as but not limited to copper. The size of the chassis 10 is approximately 410μm*4320μm. In some embodiments, the chassis 10 includes a first area A1 and a second area A2. In some embodiments, the first area A1 is located in the peripheral area of ​​the chassis 10, and the second area A2 is located in the central area of ​​the chassis 10. In some embodiments, the first area A1 surrounds the second area A2. It should be noted that the present application does not limit the area ratio of the first area A1 and the second area A2 on the chassis 10. Figure 1A and 1B The depictions are illustrative only.

[0028] In some embodiments, the silver-plated layer 11 is coated on the first area A1, and the integrated circuit chip 12 is disposed on the second area A2, so that the silver-plated layer 11 surrounds the integrated circuit chip 12. In some embodiments, a certain distance is kept between the silver-plated layer 11 and the integrated circuit chip 12 in horizontal distance to prevent the adhesive from diffusing and contacting the silver-plated layer 11 when the integrated circuit chip 12 is soldered on the second area A2.

[0029] In some embodiments, a plurality of protrusions 13 are disposed on the silver-plated layer 11. In some embodiments, the plurality of protrusions 13 are electrically isolated from the integrated circuit chip 12. In some embodiments, each protrusion 13 may be made of gold, silver, copper, tin or other materials, which is not a limitation of the present application.

[0030] In some embodiments, the integrated circuit package product 1 may further include a plurality of pins 14 and a plastic package 15. In some embodiments, the plurality of pins 14 are scattered around the chassis 10, and each pin 14 is electrically connected to the integrated circuit chip 12 via a connection wire W1. In some embodiments, the plastic package 15 covers the chassis 10 and the integrated circuit chip 12. In some embodiments, the plastic package 15 may include a resin.

[0031] It should be noted that the present application does not limit the number and distribution of the plurality of protrusions 13 on the silver-plated layer 11. Figure 2 , Figure 2The following is a schematic diagram showing the distribution of the protrusions 13 on the silver-plated layer 11 according to an embodiment of the present application. Figure 2 As shown in sub-figure (a), the protrusions 13 can be distributed on one side of the silver-plated layer 11. In this arrangement, the number of protrusions 13 required is minimal, and the consumption of consumables is minimal. Figure 2 As shown in sub-figure (b), the protrusions 13 can be distributed on both sides of the silver-plated layer 11. Under such a setting, the number of protrusions 13 required is moderate, and the consumption of consumables is moderate. Figure 2 As shown in sub-figure (c), the protrusions 13 can be distributed on three sides of the silver-plated layer 11. Under such a setting, the number of protrusions 13 required is moderate, and the consumption of consumables is moderate. Figure 2 As shown in sub-figure (d), the protrusions 13 can be distributed on the four sides of the silver-plated layer 11. In this arrangement, more protrusions 13 are required, more consumables are consumed, and the effect of increasing the surface roughness of the silver-plated layer 11 is best.

[0032] In some embodiments, two rows of protrusions 13 may be provided on each side of the silver-plated layer 11. However, this is not a limitation of the present application, and the number of rows of protrusions 13 may be increased or decreased according to the desired roughness. Similarly, the present application does not limit the number of protrusions 13 in each row and the size of the protrusions 13. Those skilled in the art should understand how to adjust the number, size, and distribution of the protrusions 13 according to the desired roughness.

[0033] refer to Figure 3 , Figure 3 A schematic diagram illustrating a protrusion 13 according to an embodiment of the present application is shown. Figure 3 As shown in sub-figure (a), the protrusion 13 includes a protruding particle 31 disposed on the silver-plated layer 11 by welding. Figure 3 The protruding particles 31 depicted in the figure are generally spherical, however, this is only for the convenience of explanation and simplicity of illustration. Figure 3 The formation method of the protrusion 13 in sub-figure (a) can refer to Figure 4 Sub-figure (a). First, one end of the metal wire 42 is sintered to form a metal ball 40; then, the metal ball 40 is welded on the silver-plated layer 11; then, the splitter 41 is raised to a preset height and vibrated to cut the wire arc, and finally, a protruding particle 31 is formed on the silver-plated layer 11. The metal material can be gold, silver, copper, tin, etc.

[0034] Generally speaking, the size of the metal line 42 may be 0.7, 0.8, 1.0, or 1.2 mil, but is not limited thereto. In some embodiments, when the wire diameter of the metal wire 42 is 0.7 mil, the size 41a of the chamfer diameter at the end of the chopping knife 41 is 23 μm, and the size 41b of the end diameter of the chopping knife 41 is 66 μm; when the wire diameter of the metal wire 42 is 0.8 mil, the size 41a of the chamfer diameter at the end of the chopping knife 41 is 27 μm, and the size 41b of the end diameter of the chopping knife 41 is 71 μm; when the wire diameter of the metal wire 42 is 1.0 mil, the size 41a of the chamfer diameter at the end of the chopping knife 41 is 41 μm, and the size 41b of the end diameter of the chopping knife 41 is 89 μm; when the wire diameter of the metal wire 42 is 1.2 mil, the size 41a of the chamfer diameter at the end of the chopping knife 41 is 48 μm, and the size 41b of the end diameter of the chopping knife 41 is 120 μm.

[0035] For the structure of the protruding particles 31, please refer to Figure 5 . In some embodiments, the protruding particles 31 include a lower structure 311 and an upper structure 312. The cross-sectional area of ​​the lower structure 311 is greater than the cross-sectional area of ​​the upper structure 312. In some embodiments, the upper surface of the upper structure 312 includes a downwardly bent shear angle structure A312. Generally speaking, the separation height 1H312 of the upper structure 312 is determined by the height to which the riving knife 41 rises during the wire arc cutting operation, the ball neck height 2H312 of the upper structure 312 is 0.5-0.8 times the separation height 1H312, and the smoothing distance 1W312 of the upper structure 312 is determined by the straight-line distance of the riving knife 41 swinging left and right during the vibration cutting of the wire arc. Generally speaking, the smoothing distance 1W312 is equal to (the size 41b of the end diameter of the riving knife 41-the size 41a of the chamfer diameter at the end of the riving knife mouth of the riving knife 41 used) / 2.

[0036] In some embodiments, the length of the lower structure 311 in the directions F1 and F2 is the size 41a of the chamfer diameter at the end of the cleaving blade 41 to (41a+25μm). Preferably, the length of the lower structure 311 in the directions F1 and F2 is the size (41a+10μm) to (41a+25μm) of the chamfer diameter at the end of the cleaving blade 41. In some embodiments, the length of the lower structure 311 in the directions F1 and F2 is 3-5 times the height H31 of the protruding particle 31 in the direction F3. Preferably, the height H31 of the protruding particle 31 in the direction F3 is [the size 41a+10μm of the chamfer diameter at the end of the cleaving blade 41] / 4μm to [the size 41a+15μm of the chamfer diameter at the end of the cleaving blade 41] / 4μm.

[0037] Reference again Figure 3 ,like Figure 3 As shown in sub-figure (b), the protrusion 13 may include, in addition to the protruding particles 31, a connecting wire 32 having one end connected to the protruding particles 31 and the other end connected to the upper surface of the silver-plated layer 11, wherein the connecting wire 32 may also be formed by welding. In some embodiments, the connecting wire 32 may be formed by welding gold, silver, copper, tin or other materials. In some embodiments, the material of the connecting wire 32 may be the same as that of the protruding particles 31. Figure 3 The formation method of the protrusion 13 in sub-figure (b) can refer to Figure 4 Sub-figure (b). First, one end of the metal wire 42 is sintered to form a metal ball 40; then, the metal ball 40 is welded to the silver-plated layer 11; then, the splitter 41 is moved to the silver-plated layer 11 and the wire arc is cut off, and finally, a connecting wire 32 is formed on the protruding particle 31 with one end connected to the protruding particle 31 and the other end connected to the silver-plated layer 11.

[0038] Reference again Figure 3 ,like Figure 3 As shown in sub-figure (c), the protrusion 13 includes two protruding particles 31 and a connecting line 32 connecting the two protruding particles 31. Figure 3 The formation method of the protrusion 13 in sub-figure (c) can refer to Figure 4 Sub-figure (c). First, a protruding particle 31 is formed on the silver-plated layer 11 (the formation method can refer to sub-figure (a)); then, one end of the metal wire 42 is sintered to form a metal ball 40; then, the metal ball 40 is welded to the silver-plated layer 11; then, the chopper 41 is moved to the protruding particle 31 that has been formed and the wire arc is cut off, and finally a connecting wire 32 is formed between the two protruding particles 31.

[0039] Reference again Figure 3 ,like Figure 3 As shown in sub-figure (d), the protrusion 13 includes two vertically stacked protruding particles 31. Figure 3 The formation method of the protrusion 13 in sub-figure (d) can refer to Figure 4 Sub-figure (d). First, a protruding particle 31 is formed on the silver-plated layer 11 (the formation method can refer to sub-figure (a)); then, one end of the metal wire 42 is sintered to form a metal ball 40; then, the metal ball 40 is welded to the formed protruding particle 31; then, the splitter 41 is raised to a preset height and vibrated to cut the wire arc, and finally two stacked protruding particles 31 are formed. Figure 4In the embodiment of sub-figure (d), those skilled in the art should understand that a plurality of protruding particles 31 can be stacked to form a protruding member 13. Although the embodiment of sub-figure (d) depicts that two protruding particles 31 are formed by vertical stacking, this is not a limitation of the present application. In other embodiments, the two protruding particles 31 can be formed by stacking in other ways (such as horizontal stacking).

[0040] Reference again Figure 3 ,like Figure 3 As shown in sub-figure (e), the protrusion 13 includes two vertically stacked protrusion particles 31 and may also include a connection line 32 with one end connected to the upper end of the protrusion particle 31 and the other end connected to the upper surface of the silver-plated layer 11, wherein the connection line 32 can also be formed by welding. Figure 3 As shown in sub-figure (f), the protrusion 13 includes two protrusion particles 31 stacked vertically, a single protrusion particle 31, and a connecting line 32 connecting the single protrusion particle 31 and the protrusion particle 31 at the upper end of the vertical stack. Figure 3 The formation method of the protrusion 13 of sub-figure (e) and sub-figure (f) will be understood by those skilled in the art after reading the following. Figure 4 Sub-figure (b) and sub-figure (c) should be easily understood after the description, and detailed description is omitted here to save space.

[0041] In other embodiments, the protrusion 13 may include any number of protrusion particles 31 and a connecting line 32 connected between two protrusion particles 31 or between a protrusion particle 31 and the silver-plated layer 11. A person skilled in the art should be able to easily understand the formation method after reading the above embodiments, and a detailed description is omitted here to save space. In other embodiments, the protrusion 13 may not be limited to the implementation of the above embodiments. In other embodiments, the protrusion 13 may include any passive element.

[0042] The plurality of protrusions 13 on the silver-plated layer 11 mainly play the role of increasing the surface roughness of the silver-plated layer 11 . The protrusions 13 are not energized and are not used to transmit electrical signals, and are electrically isolated from the integrated circuit chip 12 .

[0043] Figure 6 A flowchart of an integrated circuit packaging method 6 according to an embodiment of the present application is shown. If substantially the same result can be obtained, the present application is not limited to the method completely based on Figure 6 In some embodiments, the integrated circuit packaging method 6 can be used to manufacture the integrated circuit packaging product 1 of the embodiment of FIG. 1 , and the integrated circuit packaging product 1 will be used for the following description. The integrated circuit packaging method 6 can be roughly summarized as follows:

[0044] Step 61: coating a silver-plated layer 11 on the first area A1 of the chassis 10;

[0045] Step 62: Disposing the integrated circuit chip 12 in the second area A2 of the chassis 10;

[0046] Step 63: Arrange a plurality of protrusions 13 on the silver-plated layer 11 .

[0047] The structure and formation method of the protrusion 13 in step 63 can be referred to in Figure 3 and Figure 4 . The detailed description is omitted here to save space.

[0048] In the integrated circuit packaging product 1 and the integrated circuit packaging method 6 proposed in the present application, the surface roughness of the silver-plated layer 11 is increased by adding a protrusion 13 on the silver-plated layer 11. In this way, when the integrated circuit packaging product 1 is to be injection molded for packaging, the contact area between the chassis 10 and the plastic package body 15 can be effectively increased by the protrusion 13, thereby increasing the bonding force between the chassis 10 and the plastic package body 15 and solving the delamination problem of the chassis 10 and the plastic package body 15.

[0049] As used herein, the terms "approximately", "substantially", "substantially" and "about" are used to describe and take into account small changes. When used in conjunction with an event or situation, the term may refer to an example where the event or situation occurs exactly and an example where the event or situation occurs very approximately. As used herein with respect to a given value or range, the term "about" generally means within ±10%, ±5%, ±1% or ±0.5% of a given value or range. A range may be expressed herein as from one endpoint to another or between two endpoints. Unless otherwise specified, all ranges disclosed herein include endpoints. The term "substantially coplanar" may refer to two surfaces within a few microns (μm) positioned along the same plane, for example, within 10 μm, within 5 μm, within 1 μm or within 0.5 μm positioned along the same plane. When referring to a "substantially" identical numerical value or characteristic, the term may refer to a value within ±10%, ±5%, ±1% or ±0.5% of the average value of the value.

[0050] As used herein, the terms "approximately," "substantially," "substantially," and "about" are used to describe and explain small variations. When used in conjunction with an event or circumstance, the terms may refer to instances where the event or circumstance occurred exactly as well as instances where the event or circumstance occurred very approximately. For example, when used in conjunction with a numerical value, the terms may refer to a range of variation of less than or equal to ±10% of the numerical value, for example, less than or equal to ±5%, less than or equal to ±4%, less than or equal to ±3%, less than or equal to ±2%, less than or equal to ±1%, less than or equal to ±0.5%, less than or equal to ±0.1%, or less than or equal to ±0.05%. For example, two values ​​may be considered "substantially" or "approximately" the same if the difference between them is less than or equal to ±10% of the average of the values ​​(e.g., less than or equal to ±5%, less than or equal to ±4%, less than or equal to ±3%, less than or equal to ±2%, less than or equal to ±1%, less than or equal to ±0.5%, less than or equal to ±0.1%, or less than or equal to ±0.05%). For example, "substantially" parallel can refer to an angular variation range of less than or equal to ±10° relative to 0°, for example, less than or equal to ±5°, less than or equal to ±4°, less than or equal to ±3°, less than or equal to ±2°, less than or equal to ±1°, less than or equal to ±0.5°, less than or equal to ±0.1°, or less than or equal to ±0.05°. For example, "substantially" vertical can refer to an angular variation range of less than or equal to ±10° relative to 90°, for example, less than or equal to ±5°, less than or equal to ±4°, less than or equal to ±3°, less than or equal to ±2°, less than or equal to ±1°, less than or equal to ±0.5°, less than or equal to ±0.1°, or less than or equal to ±0.05°.

[0051] For example, two surfaces may be considered coplanar or substantially coplanar if the displacement between the two surfaces is equal to or less than 5 μm, equal to or less than 2 μm, equal to or less than 1 μm, or equal to or less than 0.5 μm. A surface may be considered planar or substantially planar if the displacement between any two points on the surface relative to the plane is equal to or less than 5 μm, equal to or less than 2 μm, equal to or less than 1 μm, or equal to or less than 0.5 μm.

[0052] As used herein, the terms "conductive," "electrically conductive," and "conductivity" refer to the ability to transfer an electric current. Conductive materials generally refer to those materials that offer little or no resistance to the flow of electric current. One measure of conductivity is Siemens / meter (S / m). Typically, a conductive material is a material having a conductivity greater than approximately 104 S / m (e.g., at least 105 S / m or at least 106 S / m). The conductivity of a material can sometimes vary with temperature. Unless otherwise specified, the conductivity of a material is measured at room temperature.

[0053] As used herein, the singular terms "a", "an" and "the" may include plural referents unless the context clearly dictates otherwise. In the description of some embodiments, a component provided "on" or "over" another component may encompass the case where the former component is directly on (e.g., physically in contact with) the latter component, as well as the case where one or more intermediate components are located between the former component and the latter component.

[0054] As used herein, spatially relative terms such as "below," "below," "lower," "above," "upper," "lower," "left," "right," etc. may be used herein for ease of description to describe the relationship of one component or feature to another component or feature as illustrated in the figures. Spatially relative terms are intended to encompass different orientations of the device in use or operation in addition to the orientation depicted in the figures. The device may be oriented in other ways (rotated 90 degrees or in other orientations), and the spatially relative descriptors used herein may likewise be interpreted accordingly. It should be understood that when a component is referred to as being "connected to" or "coupled to" another component, it may be directly connected or coupled to the other component, or intervening components may be present.

[0055] The foregoing summarizes several embodiments and detailed features of the present disclosure. The embodiments described in the present disclosure can be easily used as a basis for designing or modifying other processes and structures for performing the same or similar purposes and / or obtaining the same or similar advantages of the embodiments introduced herein. These equivalent constructions do not depart from the spirit and scope of the present disclosure and various changes, substitutions and modifications may be made without departing from the spirit and scope of the present disclosure.

Claims

1. An integrated circuit packaging product, characterized in that: include: A chassis, comprising a first region and a second region; A silver-plated layer, coated on the first area; an integrated circuit chip, disposed on the second area, the silver-plated layer surrounding the integrated circuit chip; and A plurality of protrusions are disposed on the silver-plated layer, one of the plurality of protrusions comprises a protrusion particle, and a connecting wire is connected to the protrusion particle; The plurality of protrusions increase the roughness of the silver-plated layer, and the plurality of protrusions are electrically isolated from the integrated circuit chip.

2. The integrated circuit packaging product according to claim 1, characterized in that: One of the plurality of protruding elements includes a plurality of stacked protruding particles.

3. The integrated circuit packaging product according to claim 1, characterized in that: The other end of the connecting line is connected to another protruding particle.

4. The integrated circuit packaging product according to claim 1, characterized in that: The other end of the connecting wire is connected to the upper surface of the silver-plated layer.

5. The integrated circuit packaging product according to claim 1, characterized in that: Also includes: A plurality of pins electrically connected to the integrated circuit chip; The plastic package covers the chassis and the integrated circuit chip.

6. An integrated circuit packaging method, characterized in that: include: Applying a silver coating to a first area of ​​the chassis; Disposing an integrated circuit chip in the second area of ​​the chassis; A plurality of protrusions are arranged on the silver-plated layer, including: Protruding particles are arranged on the silver-plated layer by solder balls; as well as Connecting wires are arranged on the protruding particles, wherein the plurality of protruding parts increase the roughness of the silver-plated layer, and the plurality of protruding parts are electrically isolated from the integrated circuit chip.

7. The integrated circuit packaging method according to claim 6, characterized in that: The step of providing the plurality of protrusions on the silver-plated layer further comprises: The other end of the connecting wire is connected to another protruding particle or the upper surface of the silver-plated layer.

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