A shower assembly, a reactor of a deposition apparatus and an air intake and exhaust system thereof

Abstract

The application provides a spraying assembly, a reactor of a deposition device and an air inlet and outlet system thereof. The spraying assembly is arranged in a cavity of the reactor and comprises a gas passage plate arranged at an upper portion of the cavity and a shower head arranged in the cavity. The gas passage plate is provided with a gas inlet and a gas outlet. The gas inlet is arranged at a central portion of the cavity on the gas passage plate, and the gas outlet is arranged at a position deviated from the central portion. The shower head comprises a first region provided with a plurality of spraying holes and a second region provided with a plurality of exhaust holes. The spraying holes make the gas diffusion cavity and the reaction cavity in fluid communication, and the exhaust holes are in fluid communication with the gas outlet. The uniformity of the process gas flow distribution in the reaction cavity is adjusted by adjusting the size, shape and distribution of the spraying holes in the first region and / or adjusting the size, shape and distribution of the exhaust holes in the second region, so as to accurately control the uniformity of the thickness of the film formed by the deposition device and the film forming quality, thereby improving the production efficiency of the thin film deposition.

Description

Technical Field

[0001] This invention relates to the field of equipment technology for semiconductor fabrication, and more particularly to a spray assembly, a reactor for a deposition apparatus, and its air intake and exhaust system. Background Technology

[0002] Thin film deposition is one of the core processes in chip manufacturing, and it is typically performed using various thin film deposition equipment depending on the specific film quality requirements. Achieving uniform film thickness and the uniform distribution of the reactive gas composition are key performance indicators in thin film deposition. As chip manufacturing processes advance further, the requirements for thin film quality become increasingly stringent.

[0003] In thin film deposition equipment, the design of the gas inlet and exhaust system of the reaction chamber greatly affects the movement path of the gas as it passes through the chamber, thereby affecting the distribution of the source gas on the wafer surface. This prevents the gas flow in the chamber from achieving the ideal distribution state, thus affecting the uniformity of the source gas in the chamber. Summary of the Invention

[0004] The purpose of this invention is to provide a spray assembly, a reactor for a deposition device, and its air intake and exhaust system, which improves the uniformity of the reaction source gas within the cavity.

[0005] To achieve the above objectives, in a first aspect, the present invention provides a spray assembly for a reactor in a deposition apparatus, the spray assembly being disposed within a cavity of the reactor, the spray assembly including a gas channel plate disposed at the upper part of the cavity and spray heads disposed within the cavity;

[0006] The gas channel plate is provided with a gas inlet and a gas outlet; wherein, the gas inlet is located at the center of the upper part of the cavity on the gas channel plate, and the gas outlet is located at a position off the center of the gas channel plate; the gas channel plate is provided with an annular exhaust channel, which is configured to surround the cavity, and the gas outlet is connected to the exhaust channel;

[0007] The spray head divides the reactor cavity into a gas diffusion chamber and a reaction chamber. The gas inlet is in fluid communication with the gas diffusion chamber, and the gas outlet is in fluid communication with the reaction chamber.

[0008] The spray head is provided with a first region and a second region. The first region extends outward from the center of the spray head, and the second region is disposed on the outer periphery of the spray head and adjacent to the first region.

[0009] The first area is provided with a plurality of spray holes, which are spaced apart and allow the gas diffusion chamber and the reaction chamber to be in fluid communication.

[0010] The second region is provided with a plurality of exhaust holes, which are in fluid communication with the exhaust channel;

[0011] The spray head is configured to adjust the uniformity of airflow distribution within the reaction chamber by adjusting the relative position of the first region within the spray head and the size, shape, and distribution of the spray holes within the first region.

[0012] Wherein, the sum of the gas flow rates of the spray holes on the side closest to the gas outlet in the first region of the spray head is less than the sum of the gas flow rates of the spray holes on the other side furthest from the gas outlet.

[0013] In some embodiments, the spray head may include a first spray section and a second spray section, wherein the first spray section and the second spray section each include a first region located at the center of the spray head and a second region located at the outer periphery;

[0014] The first spray section is disposed on the side of the spray head near the gas outlet, and the second spray section is disposed opposite to the first spray section, located on the side of the spray head away from the gas outlet;

[0015] The spray head is configured such that the diameter of the spray hole in the first spray section is smaller than the diameter of the spray hole in the second spray section; or the spacing between the spray holes in the first spray section is greater than the spacing between the spray holes in the second spray section.

[0016] In some embodiments, the spray head may also be configured such that the diameter of at least a portion of the spray holes of the first spray section and / or the second spray section varies along its extension direction, and the diameter of the spray hole facing the gas channel plate is different from the diameter of the spray hole facing the reaction chamber.

[0017] Wherein, at least some of the spray holes of the first spray section are configured such that the diameter of the spray hole facing the gas channel plate is greater than the diameter of the spray hole facing the reaction chamber; at least some of the spray holes of the second spray section are configured such that the diameter of the spray hole facing the gas channel plate is smaller than the diameter of the spray hole facing the reaction chamber.

[0018] In some embodiments, the plurality of vent holes are uniformly arranged along the annular region of the vent channel in the second region of the spray head, and the diameter of the plurality of vent holes is ≤5mm.

[0019] In a second aspect, the present invention provides a spray assembly for a reactor of a deposition apparatus, the spray assembly being disposed within a cavity of the reactor, the spray assembly including a gas channel plate disposed at the upper part of the cavity and spray heads disposed within the cavity;

[0020] The gas channel plate is provided with a gas inlet and a gas outlet. The gas inlet is located at the center of the upper part of the cavity on the gas channel plate, and the gas outlet is located at a position off the center of the gas channel plate. The gas channel plate is also provided with an annular exhaust channel, which is configured to surround the cavity, and the gas outlet is connected to the exhaust channel.

[0021] The spray head divides the reactor cavity into a gas diffusion chamber and a reaction chamber. The gas inlet is in fluid communication with the gas diffusion chamber, and the gas outlet is in fluid communication with the reaction chamber.

[0022] The spray head is provided with a first region and a second region. The first region extends outward from the center of the spray head, and the second region is disposed on the outer periphery of the spray head and adjacent to the first region.

[0023] The first area is provided with a plurality of spray holes, which are spaced apart and allow the gas diffusion chamber and the reaction chamber to be in fluid communication.

[0024] The second region is provided with a plurality of exhaust holes, which are in fluid communication with the gas outlet;

[0025] The spray head is configured to adjust the uniformity of airflow distribution within the reaction chamber by adjusting the relative position of the second region and the size, shape, and distribution of the exhaust holes in the second region.

[0026] Wherein, the sum of the gas flow rates of the exhaust holes on the side closer to the gas outlet in the second region of the spray head is less than the sum of the gas flow rates of the exhaust holes on the other side farther from the gas outlet.

[0027] In some embodiments, the spray head may include a first spray section and a second spray section, wherein both the first spray section and the second spray section include a first region located at the center of the spray head and a second region located at the outer periphery;

[0028] The first spray section is disposed on the side of the spray head near the gas outlet, and the second spray section is disposed opposite to the first spray section, located on the side of the spray head away from the gas outlet.

[0029] In some embodiments, the diameter of the vent holes in the second region of the first spray section is smaller than the diameter of the vent holes in the second region of the second spray section; or

[0030] The spacing between the exhaust holes in the second region of the first spray section is greater than the spacing between the exhaust holes in the second region of the second spray section.

[0031] In some embodiments, the diameter of at least a portion of the exhaust holes of the first spray section and / or the second spray section varies along its extension direction, and the diameter of the exhaust hole facing the gas channel plate is different from the diameter of the exhaust hole facing the reaction chamber.

[0032] Wherein, at least some of the exhaust holes of the first spray section are configured such that the diameter of the exhaust hole facing the gas channel plate is smaller than the diameter of the exhaust hole facing the reaction chamber; at least some of the exhaust holes of the second spray section are configured such that the diameter of the exhaust hole facing the gas channel plate is larger than the diameter of the exhaust hole facing the reaction chamber.

[0033] Thirdly, the present invention provides a reactor air intake and exhaust system for a deposition apparatus, comprising a gas mixer and a spray assembly as described in any embodiment of the first aspect above; the gas mixer has at least one air inlet and an air outlet on its cavity, the at least one air inlet may be disposed on the upper part or side of the gas mixer, and the air outlet is disposed on the lower part of the gas mixer and communicates with the gas inlet of the spray assembly.

[0034] The at least one air inlet is used to introduce a first gas, a second gas, and / or a third gas required for the deposition reaction, wherein the first gas, the second gas, and / or the third gas are mixed in the cavity of the gas mixer, and wherein the first gas, the second gas, and the third gas can be a mixed gas;

[0035] The air outlet is in fluid communication with the diffusion chamber of the spray assembly, and the air outlet has a gas passage extending from the cavity of the gas mixer to the diffusion chamber;

[0036] The gas channel includes a first part and a second part. The first part is located on the side closer to the gas outlet, and the second part is located on the side farther from the gas outlet. The cross-sectional area of ​​the first part is smaller than the cross-sectional area of ​​the second part.

[0037] A flow guide may be provided inside the cavity of the gas mixer, and the flow guide extends from the gas inlet of the gas mixer toward the gas outlet.

[0038] Fourthly, the present invention provides a reactor for a deposition apparatus, including the aforementioned reactor inlet and outlet system;

[0039] The spray assembly is disposed within the cavity of the reactor. The spray assembly includes a gas channel plate disposed at the upper part of the cavity and spray heads disposed within the cavity. The gas channel plate can be integrally formed with the cavity of the reactor or formed separately. The reactor includes an upper chamber and a lower chamber. A partition is provided between the upper chamber and the lower chamber. A sealing member can be provided between the partition and the wafer support located in the lower chamber, so that the reaction gas is discharged from the upper chamber after thin film deposition on the wafer.

[0040] The reactor is equipped with a heating device on its side wall for heating the reactor cavity during the reaction process;

[0041] The bottom of the lower chamber is also provided with a lower chamber air inlet and a lower chamber air outlet. The lower chamber can be independently inlet and outlet to ensure the vacuum state of the lower chamber.

[0042] The lower chamber outlet is connected to a lower chamber exhaust pipe, and a first pressure sensor is provided on the lower chamber exhaust pipe;

[0043] The air outlet is connected to an upper chamber exhaust pipe, and a second pressure sensor is installed on the upper chamber exhaust pipe.

[0044] One of the beneficial effects of the spray assembly, the reactor of the deposition equipment, and its air intake and exhaust system provided by the present invention is that: by setting the size, shape, or distribution of the spray holes, the airflow path in the reaction chamber can be accurately controlled, thereby promoting the uniform distribution of the reaction source; by setting the exhaust holes on the spray head, and by setting the size, shape, and distribution of the exhaust holes, the airflow path in the reaction chamber can be accurately controlled, thereby promoting the uniform distribution of the reaction source; the spray assembly of the present invention can also control the airflow distribution in the reaction chamber by changing the size and shape distribution between the first region where the spray holes are set and the second region where the exhaust holes are set, thereby promoting the uniform distribution of the reaction source, so as to improve the film thickness uniformity and film formation quality. Attached Figure Description

[0045] Figure 1 A schematic diagram of the reactor structure of the deposition apparatus provided in this embodiment of the invention;

[0046] Figure 2 A top view of the spray assembly according to the first embodiment of the present invention;

[0047] Figure 3 A top view of an existing spray head and a schematic diagram of the gas flow direction inside the spray head;

[0048] Figure 4 A top view of the spray assembly according to the second embodiment of the present invention;

[0049] Figure 5 A bottom view of the spray assembly according to the third embodiment of the present invention;

[0050] Figure 6 A bottom view of the spray assembly according to the fourth embodiment of the present invention;

[0051] Figure 7 A schematic cross-sectional view of the gas inlet provided in an embodiment of the present invention;

[0052] Figure 8 A schematic diagram of the reactor inlet and outlet air system of a deposition apparatus provided by the present invention;

[0053] Figure 9 A cross-sectional schematic diagram of a gas mixer with a flow guide provided in an embodiment of the present invention;

[0054] Figure 10 This is a schematic diagram of the reactor structure of the deposition apparatus provided in an embodiment of the present invention. Detailed Implementation

[0055] To make the objectives, technical solutions, and advantages of the embodiments of the present invention clearer, the technical solutions in the embodiments of the present invention will be clearly and completely described below. Obviously, the described embodiments are only some embodiments of the present invention, not all embodiments. Based on the embodiments of the present invention, all other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of the present invention. Unless otherwise defined, the technical or scientific terms used herein should have the ordinary meaning understood by those skilled in the art. The terms "comprising" and similar expressions used herein mean that the element or object preceding the word covers the element or object listed after the word and its equivalents, but does not exclude other elements or objects.

[0056] Figure 1 This is a schematic diagram of the reactor structure of the deposition apparatus provided in an embodiment of the present invention.

[0057] refer to Figure 1 As shown, this embodiment of the invention provides a spray assembly 2 for a reactor in a deposition apparatus. The spray assembly 2 is disposed within the chamber 1 of the reactor. The spray assembly 2 includes a gas channel plate 22 disposed on the upper part of the chamber 1 and spray heads 21 disposed within the chamber 1. The gas channel plate 22 has a gas inlet 11 and a gas outlet 12. The gas inlet 11 is located at the center of the upper part of the chamber 1 on the gas channel plate 22, and the gas outlet 12 is located at a position off-center from the center of the gas channel plate 22. The gas channel plate 22 has an annular exhaust channel 15, which surrounds the chamber 1, and the gas outlet 12 is connected to the exhaust channel 15.

[0058] Specifically, the spray head 21 divides the reactor cavity 1 into a gas diffusion chamber 13 and a reaction chamber 14. The gas inlet 11 is in fluid communication with the gas diffusion chamber 13, and the gas outlet 12 is in fluid communication with the reaction chamber 14. The spray head 21 has a first region 212 and a second region 213. The first region 212 extends outward from the center of the spray head 21, and the second region 213 is located on the outer periphery of the spray head 21 and adjacent to the first region 212. The spray head 21 has a plurality of spray holes 211, which are spaced apart on the first region 212. The spray holes 211 enable fluid communication between the gas diffusion chamber 13 and the reaction chamber 14.

[0059] The second region 213 is provided with a plurality of exhaust holes 16, which are in fluid communication with the exhaust channel 15.

[0060] In this embodiment, the uniformity of airflow distribution in the reaction chamber 14 is adjusted by adjusting the relative position of the first region 212 to the spray head 21, and the size, shape and distribution of the spray holes 211 in the first region 212.

[0061] Figure 2 This is a top view of the spray assembly according to the first embodiment of the present invention.

[0062] refer to Figure 2 As shown, in some embodiments, the sum of the gas flow rates of the spray holes 211 on the side of the spray head 21 closest to the gas outlet 12 is less than the sum of the gas flow rates of the spray holes 211 on the other side furthest from the gas outlet 12.

[0063] like Figure 3 As shown, because the gas outlet 12 of existing reactors is located off-center from the cavity 1, the movement path of the reaction source gas after entering the cavity 1 cannot achieve isotropy, resulting in a certain offset, which affects the uniformity of the reaction source gas within the cavity 1. In this embodiment, by setting the sum of the inlet flow rates of the spray holes 211 near the gas outlet 12 to be less than the sum of the inlet flow rates of the spray holes 211 far from the gas outlet 12, the distribution and flow rate of the inlet airflow are adjusted. When the reaction source gas enters the gas diffusion cavity 13 from the gas inlet 11 and enters the reaction cavity 14 through the spray holes 211, it promotes the uniform distribution of the reaction source gas within the cavity 1.

[0064] Specifically, such as Figure 2As shown, the spray head 21 may include a first spray section and a second spray section. Both the first spray section and the second spray section include a first region 212 located at the center of the spray head 21 and a second region 213 located on the outer periphery. The first spray section is disposed on the side of the spray head 21 near the gas outlet 12, and the second spray section is disposed opposite to the first spray section on the side of the spray head 21 away from the gas outlet 12.

[0065] Specifically, the spray head 21 is configured such that the diameter of the spray holes 211 in the first spray section is smaller than the diameter of the spray holes 211 in the second spray section. Alternatively, the spacing between the spray holes 211 in the first spray section is greater than the spacing between the spray holes 211 in the second spray section. In some embodiments, the spray holes 211 may also be configured such that the diameter of at least a portion of the spray holes 211 in the first spray section and / or the second spray section varies along the extension direction of the spray holes 211, with the diameter on the side of the gas channel plate 22 being different from the diameter on the side of the reaction chamber 14, thereby promoting a uniform distribution of the reaction source gas within the chamber 1.

[0066] Specifically, at least some of the spray holes 211 distributed on the first spray section are configured such that the diameter of the spray holes 211 located on the side of the gas channel plate 22 is larger than the diameter of the spray holes 211 located on the side of the reaction chamber 14. At least some of the spray holes 211 in the second spray section are configured such that the diameter of the spray holes 211 facing the gas channel plate 22 is smaller than the diameter of the spray holes 211 facing the reaction chamber 14.

[0067] In this embodiment, the gas flow rate through the spray head 21 is controlled by adjusting the diameter of the spray holes 211 at different positions (first spray section and second spray section) on the spray head 21, so as to adjust the airflow distribution and make the airflow entering the reaction chamber 14 uniformly distributed.

[0068] Figure 4 This is a top view of the spray assembly according to a second embodiment of the present invention.

[0069] In some embodiments, reference Figure 4 As shown, the spray holes 211 on the first spray section and the second spray section can be set to the same diameter, and the spacing between adjacent spray holes 211 in the first spray section can be set to be greater than the spacing between adjacent spray holes 211 in the second spray section, which also promotes the uniform distribution of the reaction source gas in the cavity 1.

[0070] In this embodiment, after adjusting the spray holes 211 of the first spray section and the second spray section to achieve a uniform airflow distribution in the reaction chamber 14, in a preferred embodiment, the shape and distribution of the exhaust holes 16 on the spray head 21 may not be adjusted; in other embodiments, the shape and distribution of the exhaust holes 16 on the spray head 21 may be further adjusted to further adjust the uniformity of the airflow distribution in the reaction chamber 14.

[0071] In some preferred embodiments, a plurality of the exhaust holes 16 are uniformly arranged along the annular region of the exhaust channel 15 on the second region of the spray head 21, and the diameter of the plurality of exhaust holes 16 is ≤5mm.

[0072] refer to Figure 1 As shown, in another embodiment of the present invention, a spray assembly is provided for a reactor in a deposition apparatus. The spray assembly 2 is disposed within the cavity 1 of the reactor. The spray assembly 2 includes a gas channel plate 22 disposed on the upper part of the cavity 1 and spray heads 21 disposed within the cavity 1. The gas channel plate 22 has a gas inlet 11 and a gas outlet 12. The gas inlet 11 is located at the center of the upper part of the cavity 1 on the gas channel plate 22, and the gas outlet 12 is located at a position off-center on the gas channel plate 22. The gas channel plate 22 has an annular exhaust channel 15, which surrounds the cavity 1, and the gas outlet 12 is connected to the exhaust channel 15.

[0073] Specifically, the spray head 21 divides the reactor cavity 1 into a gas diffusion chamber 13 and a reaction chamber 14. The gas inlet 11 is in fluid communication with the gas diffusion chamber 13, and the gas outlet 12 is in fluid communication with the reaction chamber 14. The spray head 21 has a first region 212 and a second region 213. The first region 212 extends outward from the center of the spray head 21, and the second region 213 is located on the outer periphery of the spray head 21 and adjacent to the first region 212. The spray head 21 has a plurality of spray holes 211, which are spaced apart on the first region 212, and the spray holes 211 enable fluid communication between the gas diffusion chamber 13 and the reaction chamber 14.

[0074] The second region 213 is provided with a plurality of exhaust holes 16, which are in fluid communication with the exhaust channel 15.

[0075] In this embodiment, the uniformity of airflow distribution in the reaction chamber 14 is adjusted by adjusting the relative position of the second region 213 to the spray head 21, and the size, shape and distribution of the exhaust port 16 in the second region 213.

[0076] The sum of the gas flow rates of the exhaust holes 16 on the side of the second region 213 of the spray head 21 that are close to the gas outlet 12 is less than the sum of the gas flow rates of the exhaust holes 16 on the other side that are far away from the gas outlet 12.

[0077] Figure 5 The image shows a bottom view of the spray assembly according to the third embodiment of the present invention.

[0078] refer to Figure 5 As shown, the exhaust holes 16 can be configured such that the diameter of the exhaust holes 16 in the second region 213 of the first spray section is smaller than the diameter of the exhaust holes 16 in the second region 213 of the second spray section.

[0079] Continue to refer to Figure 5 As shown, in some embodiments, the plurality of exhaust holes 16 may also be configured such that the spacing between the exhaust holes 16 in the second region 213 of the first spray section is greater than the spacing between the exhaust holes 16 in the second region 213 of the second spray section. Therefore, gas in the reaction chamber 14 can enter the exhaust channel 15 relatively uniformly through the exhaust holes 16, avoiding the impact on the uniformity of the reaction source gas in the chamber 1 due to the offset of the gas outlet 12 position. In such cases... Figure 5 In a preferred embodiment shown, the spray holes in the first region 212 of the spray head 21 are evenly distributed, or are set to have the same size and shape.

[0080] like Figure 5 As shown, in some embodiments, the plurality of exhaust holes 16 may be configured such that the diameter of the exhaust holes 16 on the second region 213 of the first spray section is smaller than the diameter of the exhaust holes 16 on the second region 213 of the second spray section, and the spacing between the exhaust holes 16 on the second region 213 of the first spray section is greater than the spacing between the exhaust holes 16 on the second region 213 of the second spray section.

[0081] In some embodiments, the diameter of at least a portion of the exhaust holes 16 on the first spray section and / or the second spray section varies along its extension direction, and the diameter of the exhaust hole 16 facing the gas channel plate 22 is different from the diameter of the exhaust hole 16 facing the reaction chamber 14.

[0082] Wherein, at least some of the exhaust holes of the first spray section are configured such that the diameter of the exhaust hole 16 facing the gas channel plate 22 is smaller than the diameter of the exhaust hole 16 facing the reaction chamber 14; at least some of the exhaust holes 16 of the second spray section are configured such that the diameter of the exhaust hole 16 facing the gas channel plate 22 is larger than the diameter of the exhaust hole 16 facing the reaction chamber 14.

[0083] refer to Figure 4 and Figure 5 Another preferred embodiment can be derived, in which the spray holes 211 on the first spray section and the second spray section are set to the same diameter, and the spacing between adjacent spray holes 211 in the first spray section is set to be greater than the spacing between adjacent spray holes 211 in the second spray section. Simultaneously, the plurality of exhaust holes 16 are configured such that the spacing between the exhaust holes 16 in the second region 213 of the first spray section is greater than the spacing between the exhaust holes 16 in the second region 213 of the second spray section.

[0084] Figure 6 The image shows a bottom view of the spray assembly according to the fourth embodiment of the present invention.

[0085] refer to Figure 1 and Figure 6 As shown, in some embodiments, the second region 213 is offset to a certain extent along the direction of the gas outlet 12, and the distribution of the exhaust holes 16 is adjusted according to this offset to adjust the gas flow path entering the exhaust channel 15, thereby ensuring the uniformity of the gas in the cavity 1.

[0086] refer to Figure 7 As shown, the gas inlet 11 may include a first portion 111 and a second portion 112. The first portion 111 is disposed on the side closer to the gas outlet 12, and the second portion 112 is disposed on the side farther from the gas outlet 12. The cross-sectional area of ​​the first portion 111 is smaller than the cross-sectional area of ​​the second portion 112. In a preferred embodiment, the cross-section of the gas inlet 11 is formed into a teardrop-shaped structure. By setting the structure of the gas inlet 11, the airflow rate near the gas outlet 12 is less than the airflow rate away from the gas outlet 12, thereby adjusting the airflow distribution during intake and ensuring the uniformity of the reactant gas within the cavity 1.

[0087] Figure 8 This is a schematic diagram of the reactor inlet and outlet system of a deposition apparatus according to an embodiment of the present invention.

[0088] refer to Figure 8As shown, in another embodiment of the present invention, a reactor inlet and outlet gas system for a deposition apparatus is provided, including a gas mixer 4 and the spray assembly 2 described in the above embodiment. The gas mixer 4 is used to fully mix the reaction source gas and deliver it to the reaction chamber 14 for reaction.

[0089] Specifically, the gas mixer 4 includes a cavity, and the cavity of the gas mixer 4 is provided with at least one air inlet 41 and an air outlet 42. The at least one air inlet 41 may be located on the upper part or the side of the gas mixer 4. The air outlet 42 is located on the lower part of the gas mixer 4 and communicates with the gas inlet 11 of the spray assembly 2. The at least one air inlet 41 is used to introduce a first gas, a second gas, and / or a third gas required for the deposition reaction. The first gas, the second gas, and / or the third gas are mixed in the cavity of the gas mixer 4, wherein the first gas, the second gas, and the third gas can be a mixed gas.

[0090] In one embodiment, the first gas may be a reactant gas (e.g., it may include a precursor, or such as hydrogen, ammonia, water vapor, etc.), and the second gas may be a carrier gas or a purge gas, using an inert gas such as argon, helium, or nitrogen. The embodiments of the present invention are not limited to the above description; the first and second gases are interchangeable. In one embodiment, the first / second gas may be a mixture of carrier gas and reactant gas, entering the inner cavity of the gas mixer 4 through the same gas channel. The third gas may be the carrier gas mentioned above, a purge gas, or a reactant gas. This application does not limit the type of the third gas; the first, second, and third gases may be any process gas in the reaction process of the deposition equipment. When purge gas is introduced into the gas channel, it may be that after introducing reactant gas into the reaction chamber once, the original reactant gas or precursor in the gas channel and reaction chamber is purged and cleared, and then the next process gas is introduced to continue the reaction or deposition process.

[0091] The air outlet 42 is fluidly connected to the gas diffusion chamber 13 of the spray assembly 2 through the gas inlet 11. The air outlet 42 has a gas channel 43 extending from the chamber of the gas mixer 4 to the diffusion chamber. The gas channel 43 includes a first part and a second part. The first part is located on the side close to the gas outlet 12, and the second part is located on the side away from the gas outlet 12. The cross-sectional area of ​​the first part is smaller than the cross-sectional area of ​​the second part.

[0092] In some embodiments, the first portion and the second portion of the gas channel 43 extend in the same direction, and the cross-sectional area of ​​the first portion and the second portion of the gas channel 43 gradually increases along their extending direction.

[0093] refer to Figure 9 As shown, in some embodiments, a flow guide 44 may be provided in the cavity of the gas mixer 4. The flow guide 44 extends from the air inlet 41 of the gas mixer 4 towards the air outlet 42, thereby creating a flow space within the cavity of the gas mixer 4. By providing the flow guide 44, the mixing effect of the gas within the cavity of the gas mixer 4 can be increased, and the uniformity of the mixed gas can be improved.

[0094] In some embodiments, the structure of the gas outlet 12 of the gas mixer 4 can be designed in a certain way, such that its cross-section is formed as follows: Figure 7 The teardrop-shaped structure shown.

[0095] Figure 10 This is a schematic diagram of the reactor structure of the deposition apparatus provided in an embodiment of the present invention.

[0096] refer to Figure 10 As shown, in another embodiment of the present invention, a reactor for a deposition apparatus is provided, including the reactor inlet and outlet system disclosed in the above embodiments. The spray assembly 2 is disposed in the cavity 1 of the reactor. The spray assembly 2 includes a gas channel plate 22 disposed on the upper part of the cavity 1 and a spray head 21 disposed in the cavity 1. The gas channel plate 22 can be integrally formed with the cavity 1 of the reactor of the deposition apparatus or separately formed. The cavity 1 of the reactor includes an upper chamber and a lower chamber 18. The upper chamber is the reaction chamber 14 mentioned in the above embodiments. A partition 17 is provided between the upper chamber and the lower chamber 8. A sealing member (not shown in the figure) can be provided between the partition 17 and the wafer support 7 located in the lower chamber 18, so that the reaction gas is discharged from the upper chamber (reaction chamber 14) after thin film deposition on the wafer 6, and does not enter the lower chamber 18.

[0097] A heating device 5 is provided on the side wall of the reactor cavity 1, and the heating device 5 is used to heat the reactor cavity 1 during the reaction process. The heating device 5 is respectively attached to the side walls of the reaction chamber 14 and the lower chamber 18. The heating device 5 can be a heating plate.

[0098] The bottom of the lower chamber 18 is also provided with a lower chamber air inlet 181 and a lower chamber air outlet 182, so that the lower chamber 18 can be independently inlet and outlet to ensure the vacuum state of the lower chamber.

[0099] Furthermore, the lower chamber outlet 182 is connected to a lower chamber exhaust pipe 183, and a first pressure sensor 184 is provided on the lower chamber exhaust pipe 183. The exhaust pressure of the lower chamber exhaust pipe 183 can be detected by the first pressure sensor 184.

[0100] The air outlet 42 is connected to an upper chamber exhaust pipe 185, and a second pressure sensor 186 is provided on the upper chamber exhaust pipe 185. The exhaust pressure of the upper chamber exhaust pipe 185 can be detected by the second pressure sensor 186.

[0101] While embodiments of the present invention have been described in detail above, it will be apparent to those skilled in the art that various modifications and variations can be made to these embodiments. However, it should be understood that such modifications and variations fall within the scope and spirit of the invention as set forth in the claims. Furthermore, the invention described herein may have other embodiments and can be implemented or carried out in various ways.

Claims

1. A shower assembly for a reactor of a deposition apparatus, characterized in that, The spray assembly is disposed within the cavity of the reactor, and the spray assembly includes a gas channel plate disposed at the upper part of the cavity and a spray head disposed within the cavity; The gas channel plate is provided with a gas inlet and a gas outlet; wherein, the gas inlet is located at the center of the upper part of the cavity on the gas channel plate, and the gas outlet is located at a position off the center of the gas channel plate; the gas channel plate is provided with an annular exhaust channel, which is configured to surround the cavity, and the gas outlet is connected to the exhaust channel; The spray head divides the reactor cavity into a gas diffusion chamber and a reaction chamber. The gas inlet is in fluid communication with the gas diffusion chamber, and the gas outlet is in fluid communication with the reaction chamber. The spray head is provided with a first region and a second region. The first region extends outward from the center of the spray head, and the second region is disposed on the outer periphery of the spray head and adjacent to the first region. The first area is provided with a plurality of spray holes, which are spaced apart and allow the gas diffusion chamber and the reaction chamber to be in fluid communication. The second region is provided with a plurality of exhaust holes, which are in fluid communication with the exhaust channel; The spray head is configured to adjust the uniformity of airflow distribution within the reaction chamber by adjusting the relative position of the first region within the spray head and the size, shape, and distribution of the spray holes within the first region. The spray head includes a first spray section and a second spray section. The first spray section is disposed on the side of the spray head near the gas outlet, and the second spray section is disposed opposite to the first spray section and located on the side of the spray head away from the gas outlet. Both the first spray section and the second spray section include a first region located at the center of the spray head and a second region located on the outer periphery. The diameter of the spray hole provided in the first spray section is smaller than the diameter of the spray hole provided in the second spray section. Wherein, the sum of the gas flow rates of the spray holes on the side closer to the gas outlet in the first region of the spray head is less than the sum of the gas flow rates of the spray holes on the other side farther from the gas outlet; The plurality of vent holes are evenly arranged in the second region of the spray head along the annular region of the vent channel.

2. The spray assembly of claim 1, wherein, The spray head is configured such that the spacing between the spray holes in the first spray section is greater than the spacing between the spray holes in the second spray section.

3. The spray assembly according to claim 2, characterized in that, The spray head is further configured such that the diameter of at least a portion of the spray holes of the first spray section and / or the second spray section varies along its extension direction, and the diameter of the spray hole facing the gas channel plate is different from the diameter of the spray hole facing the reaction chamber. Wherein, at least some of the spray holes of the first spray section are configured such that the diameter of the spray hole facing the gas channel plate is greater than the diameter of the spray hole facing the reaction chamber; at least some of the spray holes of the second spray section are configured such that the diameter of the spray hole facing the gas channel plate is smaller than the diameter of the spray hole facing the reaction chamber.

4. The spray assembly according to claim 1, characterized in that, The diameter of the aforementioned exhaust holes is ≤5mm.

5. A spray assembly for a reactor in a deposition apparatus, characterized in that, The spray assembly is disposed within the cavity of the reactor, and the spray assembly includes a gas channel plate disposed at the upper part of the cavity and a spray head disposed within the cavity; The gas channel plate is provided with a gas inlet and a gas outlet. The gas inlet is located at the center of the upper part of the cavity on the gas channel plate, and the gas outlet is located at a position off the center of the gas channel plate. The gas channel plate is also provided with an annular exhaust channel, which is configured to surround the cavity, and the gas outlet is connected to the exhaust channel. The spray head divides the reactor cavity into a gas diffusion chamber and a reaction chamber. The gas inlet is in fluid communication with the gas diffusion chamber, and the gas outlet is in fluid communication with the reaction chamber. The spray head is provided with a first region and a second region. The first region extends outward from the center of the spray head, and the second region is disposed on the outer periphery of the spray head and adjacent to the first region. The first area is provided with a plurality of spray holes, which are spaced apart and allow the gas diffusion chamber and the reaction chamber to be in fluid communication. The second region is provided with a plurality of exhaust holes, which are in fluid communication with the gas outlet; The spray head is configured to adjust the uniformity of airflow distribution within the reaction chamber by adjusting the relative position of the second region and the size, shape, and distribution of the exhaust holes in the second region. Wherein, the sum of the gas flow rates of the exhaust holes on the side closer to the gas outlet in the second region of the spray head is less than the sum of the gas flow rates of the exhaust holes on the other side farther from the gas outlet; The gas inlet includes a first part and a second part. The first part is located on the side closer to the gas outlet, and the second part is located on the side farther from the gas outlet. The cross-sectional area of ​​the first part is smaller than the cross-sectional area of ​​the second part. The second region is offset in position along the direction of the gas outlet, and the distribution of the exhaust holes is adjusted according to the offset.

6. The spray assembly according to claim 5, characterized in that, The spray head includes a first spray section and a second spray section, and both the first spray section and the second spray section include a first region located at the center of the spray head and a second region located on the outer periphery; The first spray section is disposed on the side of the spray head near the gas outlet, and the second spray section is disposed opposite to the first spray section, located on the side of the spray head away from the gas outlet.

7. The spray assembly according to claim 6, characterized in that, The diameter of the exhaust holes in the second region of the first spray section is smaller than the diameter of the exhaust holes in the second region of the second spray section; or The spacing between the exhaust holes in the second region of the first spray section is greater than the spacing between the exhaust holes in the second region of the second spray section.

8. The spray assembly according to claim 6, characterized in that, The diameter of at least a portion of the exhaust holes of the first spray section and / or the second spray section varies along its extension direction, and the diameter of the exhaust hole facing the gas channel plate is different from the diameter of the exhaust hole facing the reaction chamber. Wherein, at least some of the exhaust holes of the first spray section are configured such that the diameter of the exhaust hole facing the gas channel plate is smaller than the diameter of the exhaust hole facing the reaction chamber; at least some of the exhaust holes of the second spray section are configured such that the diameter of the exhaust hole facing the gas channel plate is larger than the diameter of the exhaust hole facing the reaction chamber.

9. A reactor inlet and outlet air system for a deposition apparatus, characterized in that, Includes a gas mixer and a spray assembly as described in any one of claims 1 to 8; The gas mixer has at least one air inlet and one air outlet on its cavity. The at least one air inlet is located on the upper part or side of the gas mixer, and the air outlet is located on the lower part of the gas mixer and communicates with the gas inlet of the spray assembly. The at least one air inlet is used to introduce a first gas, a second gas, and / or a third gas required for the deposition reaction, wherein the first gas, the second gas, and / or the third gas are mixed in the cavity of the gas mixer, and wherein the first gas, the second gas, and the third gas are a mixed gas. The air outlet is in fluid communication with the diffusion chamber of the spray assembly, and the air outlet has a gas passage extending from the cavity of the gas mixer to the diffusion chamber; The gas channel includes a first part and a second part. The first part is located on the side closer to the gas outlet, and the second part is located on the side farther from the gas outlet. The cross-sectional area of ​​the first part is smaller than the cross-sectional area of ​​the second part. A flow guide is provided inside the cavity of the gas mixer, and the flow guide extends from the gas inlet to the gas outlet of the gas mixer.

10. A reactor for a deposition apparatus, characterized in that, Includes the reactor inlet and outlet system as described in claim 9; The spray assembly is disposed within the cavity of the reactor. The spray assembly includes a gas channel plate disposed at the upper part of the cavity and a spray head disposed within the cavity. The gas channel plate is integrally formed with or separately formed from the cavity of the reactor. The reactor includes an upper chamber and a lower chamber. A partition is provided between the upper chamber and the lower chamber. A sealing member is provided between the partition and the wafer support located in the lower chamber, so that the reaction gas is discharged from the upper chamber after completing the thin film deposition on the wafer. The reactor is equipped with a heating device on its side wall for heating the reactor cavity during the reaction process; The bottom of the lower chamber is also provided with a lower chamber air inlet and a lower chamber air outlet. The lower chamber is independently equipped with air intake and exhaust to ensure the vacuum state of the lower chamber. The lower chamber outlet is connected to a lower chamber exhaust pipe, and a first pressure sensor is provided on the lower chamber exhaust pipe; The air outlet is connected to an upper chamber exhaust pipe, and a second pressure sensor is installed on the upper chamber exhaust pipe.

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