Equipment, systems and methods for plasma-assisted chemical vapor deposition

Abstract

The present invention relates to an apparatus (1), a system (50), and a method (100) for plasma-assisted chemical vapor deposition. Here, a processing chamber (2) is configured to receive at least one workpiece carrier (30). According to the invention, the apparatus (1) is configured to heat the processing chamber (2) by means of at least one workpiece carrier (30) capable of being received by the processing chamber (2).

Description

[0001] This invention relates to apparatus, systems, and methods for plasma-assisted chemical vapor deposition.

[0002] Chemical vapor deposition (CVD) is known for coating substrates. Here, at least one gas containing the material to be deposited is provided. The material is deposited onto the substrate through a chemical reaction (e.g., temperature-driven). Microelectronic components or optical waveguides can be fabricated using CVD, for example.

[0003] The deposition rate can be further increased by generating a gas-based plasma. Furthermore, this allows the deposition reaction to be effectively driven at even lower temperatures. This variant of chemical vapor deposition is commonly referred to as plasma-enhanced chemical vapor deposition (PECVD).

[0004] To achieve the necessary processing temperatures, a workpiece carrier used to support a substrate (such as a semiconductor wafer) is typically introduced into a reaction chamber with heatable walls. Such a reaction chamber is sometimes referred to as a hot-wall reactor. Here, heating is typically carried out via resistance heating elements mounted in the walls of the processing chamber.

[0005] The purpose of this invention is to further improve plasma-assisted chemical vapor deposition, especially to increase its efficiency.

[0006] This objective is achieved by the apparatus, system, and method for plasma-assisted chemical vapor deposition as described in this application.

[0007] An apparatus for plasma-assisted chemical vapor deposition according to a first aspect of the invention has a processing chamber for receiving at least one workpiece carrier. According to the invention, the apparatus is configured to heat the processing chamber, preferably up to the processing temperature for vapor deposition, by means of at least one workpiece carrier that can be received by the processing chamber.

[0008] Heating in the sense of this invention is active heating, wherein at least one component dedicated to heating is used. This heating also includes temporary heating. When the processing chamber is heated by means of at least one workpiece carrier that can be received by the processing chamber, the workpiece carrier can operate, for example, as a heating device. Conversely, passive heating, for example, by means of waste heat, is not heating in the sense of this invention. That is, raising the temperature of the processing chamber by heating the electrodes of the workpiece carrier to generate plasma is not heating in the sense of this invention.

[0009] One aspect of the invention is based on an apparatus for plasma-assisted chemical vapor deposition configured such that the processing chamber for receiving at least one workpiece carrier can be actively heated only by means of at least one workpiece carrier that can be received. Specifically, the apparatus can be configured such that the processing chamber can be heated by means of the workpiece carrier independently of the processing gas introduced into the processing chamber and / or the vacuum generated within the processing chamber.

[0010] In the context of this invention, a vacuum is characterized by a pressure lower than the air pressure acting on the device. In other words, in the context of this invention, a vacuum refers to a low pressure within the processing chamber relative to the environment of the device, for example, a pressure substantially below 1 bar.

[0011] That is, the device can be configured, for example, to operate the workpiece carrier as a heating device. Since the processing chamber can be heated by means of the workpiece carrier housed within it, a separate heating system for the device, such as a heating element or heating box installed in the processing chamber area, can be eliminated. Therefore, the device can be designed more simply and manufactured at a lower cost. Furthermore, the processing chamber can operate as a so-called "cold-wall reactor," thereby improving operational safety. Moreover, by eliminating a separate heating system, accidental heating of the processing chamber without the workpiece carrier being introduced can be avoided, or the corresponding costly safety mechanisms that allow heating only when the workpiece carrier is housed can be eliminated.

[0012] Furthermore, the equipment configured to heat the processing chamber using a workpiece carrier that can be accepted saves construction space within the processing chamber, allowing for a more compact design. This reduces the volume and mass of the workpiece to be heated. At the same heating power, this shortens the time required to reach the processing temperature. Consequently, the equipment can operate energy efficiently, and the processing of workpieces can be accelerated, correspondingly increasing throughput.

[0013] The device conveniently includes a control unit configured to control the heating of the processing chamber by means of the at least one receptable workpiece carrier. Specifically, the control unit can be configured to operate the at least one receptable workpiece carrier as a heating device. The control unit can, for example, be configured to establish a connection between the workpiece carrier and a current source and / or a voltage source, such that a heating current flows through at least a portion of the workpiece carrier. The heating current can here be a low-frequency alternating current, for example, an alternating current having a frequency of less than 1 kHz, preferably about 50 Hz. A portion of the workpiece carrier, such as a plurality of electrodes connected in series, can here serve as a heating resistor.

[0014] The preferred embodiments and improvements thereof will be described below. Unless explicitly excluded, these embodiments and improvements may be combined with each other and with the aspects of the invention described below.

[0015] In a preferred embodiment, the device includes a switching device configured to selectively connect the at least one workpiece carrier received by the processing chamber to at least one heating voltage source or plasma voltage source. The heating voltage source is conveniently configured to provide a low-frequency AC voltage to heat the processing chamber, and the plasma source is conveniently configured to provide a high-frequency AC voltage to generate plasma. The low-frequency AC voltage here has a frequency of 1 kHz or lower, such as 50 Hz, and the high-frequency AC voltage has a frequency of 1 kHz or higher, such as 40 kHz. The switching device is preferably configured to selectively integrate the workpiece carrier received by the processing chamber into a plasma circuit for guiding high-frequency AC current or into at least one heating circuit for guiding low-frequency AC current. In particular, the switching device can be configured to selectively integrate the workpiece carrier received by the processing chamber into a single plasma circuit for guiding high-frequency AC current to operate as a plasma device, and to selectively integrate it into at least two preferably parallel heating circuits for guiding low-frequency AC current to operate as a heating device. Thus, different operating modes of the at least one received workpiece carrier can be achieved by means of the switching device.

[0016] The heating voltage source is configured, for example, to provide a low-frequency AC voltage having an effective voltage of 145V and an effective current intensity greater than 90A (e.g., 120A). The plasma voltage source is configured, for example, to provide a high-frequency AC voltage having an effective voltage of 800V to 1000V and an effective current intensity less than 90A (e.g., 75A).

[0017] In another preferred embodiment, the switching device has at least two switching assemblies configured to interrupt the conductive connection between the at least one heating voltage source and the plasma voltage source and a current interface capable of being connected to the workpiece carrier. Specifically, the switching assemblies may be configured to interrupt the electrical wires of the at least one heating voltage source or the plasma voltage source with the current interface, also referred to as contact pins. Each of these switching assemblies may have at least one switch integrated into one of these wires. Thus, the at least one heating voltage source and the plasma voltage source can be connected to the at least one receptacle workpiece carrier independently of each other.

[0018] The control unit for controlling the heating of the processing chamber by means of the at least one receptacle workpiece carrier is preferably part of a switching device. The control unit is conveniently configured to control the at least two switching components. The control unit may, for example, be configured to open or close these switching components. In particular, the control unit may be configured to disconnect the heating voltage source from the workpiece carrier and connect the plasma voltage source to the workpiece carrier by correspondingly manipulating the switching components when a switching signal is present. The switching signal may, for example, be a user-generated switching signal provided via a user interface. Alternatively or additionally, the switching signal may also be generated by the control unit, for example, when the temperature of the workpiece carrier or its surrounding environment reaches or exceeds the processing temperature. For this purpose, the control unit may be connected to a temperature sensor configured to estimate the workpiece carrier temperature or the ambient temperature.

[0019] In another preferred embodiment, the device has a current interface to which the workpiece carrier, which can be received by the processing chamber, can be connected. The current interface preferably includes at least four contact pins for electrical contact with the workpiece carrier. This allows current and / or voltage to be supplied to at least two circuits of the workpiece carrier independently of each other.

[0020] Contact pins can extend from the processing chamber wall and be arranged to contact contact points on the workpiece carrier when it is received by the processing chamber, for example, to establish an electrical connection. In particular, it is conceivable that the contact pins are designed to enter corresponding, preferably tapered, holes on the workpiece carrier. This allows the contact pins to slide into the holes and be guided to a predetermined position when the workpiece carrier is introduced into the processing chamber. This enables a particularly reliable electrical connection between the workpiece carrier and the device. To ensure minimal compressive force on the contact pins when the at least one workpiece carrier is received by the processing chamber, it is also conceivable that the contact pins be elastically mounted inside the processing chamber.

[0021] In another preferred embodiment, these contact pins are arranged in the region of the rear wall of the processing chamber. This rear wall should be understood as the processing chamber wall on the side opposite to at least one opening for introducing the workpiece carrier into the processing chamber. Here, the contact pins are preferably arranged such that they automatically contact the at least one workpiece carrier upon reception through the processing chamber. For example, the contact pins can be arranged such that they contact the corresponding contact point on the workpiece carrier at the end of the action of pushing the at least one workpiece carrier into the processing chamber. This simplifies the operation of the device. On the one hand, the additional contact step, in which the at least one workpiece carrier that can be received by the processing chamber must be actively connected to the device, can be omitted. On the other hand, there is no need to explicitly concern oneself with whether the workpiece carrier is correctly connected. Rather, this is accomplished simply by fully introducing the workpiece carrier into the processing chamber.

[0022] In another preferred embodiment, the processing chamber is configured to receive two workpiece carriers, particularly side-by-side. Conveniently, the processing chamber is formed with a corresponding width, i.e., at least twice the width of a single workpiece carrier. Correspondingly, the processing chamber may also have two electrical interfaces for separately connecting each workpiece carrier. The size of the processing chamber for receiving two workpiece carriers allows for increased throughput.

[0023] In another preferred embodiment, the processing chamber has two closable openings arranged side-by-side to allow the introduction of at least one workpiece carrier into the processing chamber. These two openings are preferably separated from each other by a stop, which can be, for example, a door or flap used to close the openings. This allows the two workpiece carriers to be introduced into or removed from the processing chamber independently of each other.

[0024] In another preferred embodiment, the processing chamber is formed substantially rectangular and configured to receive at least one workpiece carrier having a substantially rectangular cross-section. This allows the processing space volume to be optimally fitted to the contours of the workpiece carrier. In particular, it minimizes the dead volume within the processing chamber. This allows for optimal layout of the gas extraction system (especially a vacuum pump) used to generate a vacuum in the processing chamber and enables reduced consumption of the processing gas fed into the processing chamber.

[0025] In another preferred embodiment, the processing chamber has at least one reflective device configured to reflect electromagnetic radiation (particularly thermal radiation in the infrared region of the electromagnetic spectrum) emitted from the at least one receptible workpiece carrier back onto the workpiece carrier. For this purpose, the at least one reflective device may, for example, comprise a plurality of preferably rectangular plates. This at least one reflective device allows for more efficient operation of the equipment. In particular, the time required to reach the preset processing temperature in the processing chamber can be reduced by means of this at least one reflective device, thereby increasing throughput. This also saves energy.

[0026] These multiple plates are conveniently stacked, allowing electromagnetic radiation to be reflected particularly effectively. These plates can be made of different materials, each specifically suited to reflecting a particular wavelength. By stacking such plates into a reflecting device, electromagnetic radiation can also be effectively reflected over a wide wavelength range.

[0027] In another preferred embodiment, the processing chamber has at least three reflective devices arranged substantially at right angles to each other, such that, when a workpiece carrier is received in the processing chamber, these reflective devices are positioned above and along two opposing longitudinal sides of the workpiece carrier. This reflects at least a large portion of the electromagnetic radiation emitted by the at least one receivable workpiece carrier. In particular, a large angular range around the at least one receivable workpiece carrier can be shielded by means of the reflective devices. In addition to improved energy efficiency and accelerated heating, the arrangement of the reflective devices also allows for reliable limitation of the processing chamber wall temperature.

[0028] In another preferred embodiment, the device has a gas feed system for feeding processing gas into the processing chamber.

[0029] The gas feeding system preferably includes multiple injectors. With the workpiece carrier received, these injectors are conveniently arranged above the workpiece carrier in the area of ​​the cover of the processing chamber for feeding the processing gas, allowing the processing gas to be conveniently fed in from above. For this purpose, the injectors can be installed, for example, in the cover of the processing chamber. Providing multiple injectors that are fluidly connected to the processing chamber, for example, to at least one gas inlet line, allows for a particularly uniform distribution of the processing gas to be fed into the processing chamber. This also allows for particularly uniform processing of the workpiece carried by the workpiece carrier.

[0030] Here, the plurality of injectors are preferably arranged along the cover of the processing chamber, for example, in the form of an injector array. The plurality of injectors can be arranged particularly along the inlet direction, in which the at least one workpiece carrier can be introduced into the processing chamber. For each workpiece carrier that can be received by the processing chamber, a row of injectors arranged one after the other in the inlet direction can be provided. Where appropriate, two parallel rows of such injectors arranged one after the other can also be envisioned, so that two different processing gases can be introduced. Here, the injectors in each row are conveniently connected in a fluid-conducting manner to one of the two processing gas inlet lines and / or arranged in pairs next to the injectors in the other row, so as to achieve an equal distribution of the two different processing gases.

[0031] These injectors are preferably formed in the shape of nozzles to selectively inject the processing gas. In the region of the outlet opening into the processing chamber, each of these injectors can, for example, be shaped such that the processing gas can be blown into the processing chamber in a beam (i.e., with only minimal divergence and essentially linear). This allows the processing gas to be directly supplied to regions where at least one component of the processing gas should be deposited onto the surface of a workpiece carried by a workpiece carrier, for example, between the electrodes of the at least one received workpiece carrier. This allows for particularly efficient utilization of the fed processing gas and correspondingly reduces the consumption of the processing gas.

[0032] In another preferred embodiment, these nozzle-shaped injectors are arranged such that processing gas can be blown into the space between a plurality of parallel electrodes of the at least one receptacle workpiece carrier. This makes it easier to generate plasma between the electrodes or to generate plasma with a small amount of feed gas. The feed gas can therefore flow through the space between these electrodes of the workpiece carrier and be extracted below the at least one receptacle workpiece carrier, rather than being pre-distributed (unnecessarily) in the processing chamber.

[0033] In another preferred embodiment, the device has a gas exhaust system.

[0034] The gas extraction system preferably includes multiple gas outlets located in the bottom region of the processing chamber, positioned below the workpiece carrier when it is received, to extract gas. These gas outlets can be formed, for example, as openings in the bottom of the processing chamber. The multiple gas outlets are preferably distributed along the bottom of the processing chamber, for example, in the form of a gas outlet array. The multiple gas outlets can be arranged particularly along the inlet direction. Preferably, one gas outlet is provided for each injector, particularly for each injector pair formed by two parallel rows of injectors. This allows for uniform extraction of processing gas from the processing chamber. This is particularly advantageous when gas is uniformly fed in via multiple injectors, as undesirable concentration differences can be avoided.

[0035] A system for plasma-assisted chemical vapor deposition according to a second aspect of the invention comprises an apparatus for plasma-assisted chemical vapor deposition according to a first aspect of the invention and a workpiece carrier by means of which the processing chamber of the apparatus can be heated. The workpiece carrier is preferably configured to be introduced into, and particularly received by, the processing chamber of the apparatus. The workpiece carrier is conveniently configured to be operated by the apparatus as a heating device. For this purpose, the heating device has, for example, a plurality of heating circuits formed by electrodes of the workpiece carrier. These electrodes are preferably used as heating resistors, on which a low-frequency AC voltage can be applied. In a particularly preferred manner, the workpiece carrier can also be configured to be operated by the apparatus as a plasma device, by which plasma can be generated in the processing chamber. For this purpose, for example, at least two of these heating circuits can be isolated from each other and have electrodes adjacent to each other, such that a high-frequency AC voltage can be applied between the adjacent electrodes.

[0036] In the method for plasma-assisted chemical vapor deposition according to a third aspect of the invention, the processing chamber is heated, specifically according to the invention, by means of at least one workpiece or workpiece carrier that can be received by the processing chamber. In other words, the processing chamber can be actively heated by the workpiece or workpiece carrier.

[0037] A heating current in the form of a low-frequency alternating current can be conveniently directed through the workpiece or workpiece carrier, for example, by applying a corresponding alternating voltage to the workpiece or workpiece carrier. For example, an alternating voltage having a frequency of less than 1 kHz, such as 50 Hz, can be applied to the electrode assembly, particularly to multiple electrodes connected in series within the electrode assembly. These electrodes conveniently function as heating resistors. However, it is also conceivable that the workpiece itself can be used as a heating resistor. The processing chamber can be heated without resorting to a conventional heating system arranged in the processing chamber area using the method according to the invention. For example, separate heating devices can be eliminated, and thus equipment with a more compact processing chamber can be used. This also allows for a reduction in the time required to reach the processing temperature set for vapor deposition. Simultaneously, the method of the invention can reduce process costs. Higher deposition rates can also be achieved in certain applications.

[0038] Before entering the heat treatment chamber, the workpiece carrier or workpiece can be introduced into the treatment chamber, for example, via running wheels arranged in the treatment chamber. Here, the workpiece carrier is preferably electrically connected to the switching device of the equipment, particularly automatically. The workpiece carrier can, for example, be pushed into the treatment chamber so far that the contact point on the workpiece carrier makes contact with the contact pin of the current interface of the equipment arranged in the rear wall area of ​​the treatment chamber.

[0039] The workpiece or workpiece carrier can be conveniently operated as a plasma device after heating. For this purpose, a high-frequency AC voltage with a frequency of 1 kHz or higher, such as 40 kHz, can be applied to the workpiece or workpiece carrier, especially the electrodes. This allows for particularly efficient utilization of the workpiece or workpiece carrier.

[0040] The invention will now be explained in detail with the aid of the accompanying drawings. Where appropriate, elements with the same function are given the same reference numerals in the drawings. The invention is not limited to the embodiments shown in the drawings, nor is it limited in terms of functional features. The foregoing description and the following description of the drawings contain numerous features, which are presented in the separate dependent claims in a manner partially summarized as a plurality of features. However, those skilled in the art can consider these features individually, along with all the remaining features disclosed above or below in the description of the drawings, and combine them into other meaningful combinations. All the mentioned combinations, in particular, can be combined individually and in any suitable manner with the apparatus according to the first aspect of the invention, the system according to the second aspect of the invention, and the method according to the third aspect of the invention.

[0041] The accompanying drawings at least partially illustrate the following:

[0042] Figure 1 An example of an apparatus for plasma-assisted vapor deposition is shown in a side view;

[0043] Figure 2An example of a system for plasma-assisted vapor deposition is shown;

[0044] Figure 3 An example of a system for plasma-assisted vapor deposition is shown; and

[0045] Figure 4 An example of a method for plasma-assisted vapor deposition is shown.

[0046] Figure 1 An example of an apparatus 1 for plasma-assisted vapor deposition is shown in a side view. Apparatus 1 includes: a processing chamber 2 for receiving at least one workpiece carrier through a closable opening 17; a gas feed system 3 for feeding at least one processing gas into the processing chamber 2; and a gas exhaust system 4 for creating a vacuum in the processing chamber 2. Apparatus 1 is configured to heat the processing chamber 2 by means of at least one workpiece carrier that can be received by the processing chamber 2.

[0047] For this purpose, the device 1 includes a current interface 5 for electrically connecting a workpiece carrier to the device 1. The current interface 5 is preferably located inside the processing chamber 2, particularly in the region of the rear wall 6 of the processing chamber 2. The current interface 5 preferably has a plurality of contact pins 7, which are sometimes referred to as current leads. The contact pins 7 are preferably arranged such that the workpiece carrier introduced into the processing chamber 2 contacts the contact pins 7 at the rear wall 6.

[0048] Current interface 5 is preferably a switching device of device 1 (see...) Figure 3 As part of the process chamber 2, the switching device is configured to integrate at least one workpiece carrier capable of being received by the processing chamber 2 via a current interface 5 into at least one heating circuit for guiding low-frequency alternating current, so as to heat the processing chamber 2. Additionally, the switching device may also be configured to integrate a workpiece carrier capable of being received into a plasma circuit for guiding high-frequency alternating current via the current interface 5, so as to generate plasma in the processing chamber 2.

[0049] To introduce the at least one workpiece carrier into the processing chamber 2, running wheels 8 are preferably arranged in the processing chamber 2. The running wheels 8 may, for example, have concave running surfaces that guide the running track of the workpiece carrier (see...). Figure 2The running wheels 8 are arranged along the introduction direction E, in which at least one workpiece carrier can be introduced into the processing chamber 2. Besides facilitating the guidance of the at least one workpiece carrier into the processing chamber 2, the running wheels 8 also enable accurate orientation of the workpiece carrier within the processing chamber 2. This ensures that the contact pin 7 reliably contacts a predefined contact point at the end of the workpiece carrier that can be received by the processing chamber 2, facing the current interface 5. For clarity, only one of the running wheels 8 is shown with reference numerals.

[0050] At least one workpiece carrier is introduced into the processing chamber 2 via running wheels 8, and the opening 17 of the processing chamber 2 is such that it is accessed by means of a door or a flap (see...). Figure 2 After being sealed, the gas in the processing chamber 2 can be extracted via the gas extraction system 4. The gas extraction system 4 conveniently includes at least one vacuum pump 9, which is connected to the processing chamber 2, for example, via a gas exhaust line 10. The gas extraction system 4 preferably has multiple gas outlets 11, which originate from the bottom 12 of the processing chamber 2 and converge into the gas exhaust line 10. Because there are multiple gas outlets 11, the gas in the processing chamber 2 can be extracted uniformly. Uniform extraction can be further improved by arranging the gas outlets 11 on the bottom 12 of the processing chamber 2, for example... Figure 1 The diagram shows a row parallel to the direction of introduction E. For clarity, only one of the gas outlets 11 is labeled.

[0051] If the processing chamber 2 has been heated to the processing temperature for vapor deposition using at least one workpiece carrier that can be received by the processing chamber 2, then at least one processing gas can be introduced into the processing chamber 2 by means of a gas feed system 3. In the illustrated example, the gas feed system 3 has two gas feed lines 13 for this purpose, which can be connected to processing gas supply devices, such as processing gas tanks or processing gas supply lines, respectively. The gas feed line system 3 also preferably has a plurality of injectors 14, which can blow the processing gas guided from the gas feed lines 13 into the processing chamber 2. The injectors 14, conveniently arranged inside the processing chamber 2, especially in the area of ​​the cover 15 of the processing chamber 2, can here be connected to the gas feed lines 13, for example, via injector feed lines 16. For clarity, only one of the injectors 14 and only one of the injector feed lines 16 are given reference numerals.

[0052] The plurality of injectors 14 are preferably formed in the shape of nozzles and arranged such that the processing gas guided from the two gas inlet lines 13 can be directed into the processing chamber 2, particularly in the direction of the workpiece carrier received by the processing chamber 2. The injectors 14 can be arranged in a row in the inlet direction E, in particular similar to the gas outlets 11. Here, all injectors 14 associated with a gas inlet line 13 and therefore with a processing gas are preferably arranged in a row.

[0053] When the injector 14 at the cover 15 of the processing chamber 2 (as specified in the example shown here) is aligned with the opening of the gas outlet 11 in the bottom 12 of the processing chamber 2, it makes it much easier to maintain a uniform concentration of the introduced processing gas in the processing chamber 2. The resulting uniform processing conditions ensure that the processed workpieces have consistent characteristics.

[0054] To optimally utilize the heat generated during the heating process in the heating chamber, the apparatus 1 preferably includes at least one reflective device 20 for reflecting electromagnetic radiation, particularly thermal radiation from the infrared region of the electromagnetic spectrum. This at least one reflective device 20 is preferably composed of stacked plates. The multiple plates in the stack can be made of different materials to reflect radiation of different wavelengths, thereby enabling efficient reflection of thermal radiation over a wide wavelength range, for example.

[0055] In the example shown, the reflector 20 is arranged at the cover 15 of the processing chamber 2, and particularly parallel to the cover 15, so that electromagnetic radiation emitted from the workpiece carrier received in the processing chamber 2 toward the cover 15 is reflected back to the workpiece carrier. This allows the processing chamber 2 to be heated more quickly.

[0056] To avoid interfering with the feeding of the processing gas into the processing chamber 2, the reflector 20 preferably has holes in the form of through-holes that can be penetrated by the injector 14. Alternatively, unlike the example shown here, it is conceivable that the injector 14 terminates flush with the reflector 20.

[0057] Figure 2 A system 50 for plasma-assisted vapor deposition is shown. System 50 has an apparatus 1 for plasma-assisted vapor deposition, the apparatus having a processing chamber 2 and at least one workpiece carrier 30, the processing chamber being capable of receiving the at least one workpiece carrier 30. The apparatus 1... Figure 1 The previous view shows the chamber 2 being configured to heat the chamber by means of at least one accepted workpiece carrier 30.

[0058] The device 1 shown here is similar to Figure 1The device shown is configured in a manner that clarifies the process, but the gas extraction system is omitted from the illustration for clarity. Components or groups of components obscured by other components or component groups are shown here in dashed lines.

[0059] In the current example, processing chamber 2 is configured to receive two workpiece carriers 30 side by side, that is, two transverse to the introduction direction (see...). Figure 1 The workpiece carriers 30 are arranged in rows. To accommodate the workpiece carriers 30, the processing chamber 2 conveniently has two side-by-side openings 17, which can be closed by means of a door 18. In the example shown, only [the following is shown] Figure 2 The left door 18 in the middle thus covers one of the openings 17. Figure 2 The right door 18 in the middle is shown as transparent.

[0060] The two openings 17 are preferably separated from each other by a stop 19 for the door 18. The processing chamber 2 extends behind the stop 19, but conveniently extends behind both openings 17. That is, there is no gas separation between the two areas where the workpiece carrier 30 is received by the processing chamber 2.

[0061] The device 1 preferably includes running wheels 8 arranged in the processing chamber 2 to facilitate the introduction of the workpiece carrier 30. The workpiece carrier 30 here preferably has corresponding running tracks 33, which can be guided on the concave running surfaces of the running wheels 8. However, alternatively, other guiding systems for guiding the workpiece carrier 30 in the processing chamber 2 are conceivable. For example, the workpiece carrier 30 may also be provided with running wheels that can roll on running tracks in the processing chamber 2. In another variant, sliding elements may also be provided to save construction space compared to variants with running wheels.

[0062] As in Figure 2 As can also be clearly seen, the processing chamber 2 is preferably shaped as a rectangle. This allows for efficient reception of rectangular workpiece carriers 30, meaning that unused space (also known as dead volume) in the processing chamber 2 can be avoided or at least reduced. This, in turn, makes it easier to create a vacuum in the processing chamber 2 and reduces the consumption of processing gases.

[0063] In the illustrated example, two gas feed lines 13 of a gas feed system 3 extend above the processing chamber 2. Conveniently, injector feed lines 16 branch off from each gas feed line 13 on opposite sides, preferably in pairs. This allows for a particularly uniform feed of processing gas to each of the two workpiece carriers 30 received by the processing chamber 2. Injectors 14 connected to the injector feed lines 16 are preferably arranged in the area of ​​the cover 15 of the processing chamber 2 such that the two injectors 14 are placed side by side to blow in different processing gases for one of these received workpiece carriers 30. Thus, for example, trimethylamine (TMA) can be fed through at least one injector 14 and silane (SiH4), ammonia (NH3), nitrous oxide (N2O), or methane (CH4) can be fed through at least one additional injector 14.

[0064] However, alternatively, more than two gas feed lines 13 and corresponding injector feed lines for other injectors can be envisioned to allow for the simultaneous feeding of additional process gases. Advantageously, at least one compound from the group consisting of phosphane (PH3), diborane (B2H6), and molecular oxygen (O2) can be fed as additional process gases.

[0065] exist Figure 2 The diagram also shows four reflecting devices 20 arranged in the processing chamber 2. Two of these reflecting devices 20 are arranged in the area of ​​the cover 15 of the processing chamber 2, particularly above the workpiece carrier 30 when it is received. The other two reflecting devices 20 are arranged in the area of ​​the side wall 21 of the processing chamber 2, particularly along one side of the workpiece carrier 30 when it is received. This allows electromagnetic radiation emitted from the workpiece carrier 30 during the heating process in the processing chamber 2 to be reflected back onto the workpiece carrier 30.

[0066] The same effect can also be achieved by providing only one reflective device 20 instead of two in the area of ​​the cover 15, which extends substantially over the total width of the processing chamber 2. Thus, an embodiment with at least three reflective devices 20 is advantageous.

[0067] Figure 3 An example of the switching device 22 is shown. The switching device 22 is preferably configured to operate the workpiece carrier 30, which can be used in the processing chamber of a plasma-assisted vapor deposition apparatus, as a heating device to heat the processing chamber in a first operating mode, and to operate the workpiece carrier 30 as a plasma device to generate plasma by at least one processing gas fed into the processing chamber in a second operating mode.

[0068] The switching device 22 conveniently includes a plurality of switching components 23a, 23b for providing a high-frequency AC voltage to generate plasma, a plasma voltage source 24, and at least one heating voltage source 25 for providing a low-frequency AC voltage to heat the processing chamber.

[0069] The switching device 22 is preferably designed such that the workpiece carrier 30 is electrically contacted when it is received by the processing chamber. Thus, the switching device 22 can selectively establish an electrical connection between the plasma voltage source 24 or the at least one heating voltage source 25 and the workpiece carrier 30. For this purpose, the switching device 22 may, for example, have a current interface with a plurality of contact pins 7 arranged in the processing chamber. The corresponding contact point 31 of the workpiece carrier 30 can be contacted, for example, by means of the contact pins 7. For clarity, only one contact point 31 and only one contact pin 7 are marked with reference numerals.

[0070] The switching device 22 is preferably configured to first electrically connect the at least one heating voltage source 25 to a workpiece carrier 30 that can be received by the processing chamber, for example by closing the first switching assembly 23a. The switching device 22 can be configured in particular to integrate the workpiece carrier 30 into at least one heating circuit by creating this electrical connection.

[0071] The switching device 22 can, for example, be configured such that, when the first switching assembly 23a is closed, (i) a low-frequency alternating current flows through the first set of electrodes 32a of the electrode assembly of the workpiece carrier 30, which can be received by the processing chamber, between the poles 25a and 25b of the at least one heating voltage source 25, and (ii) a low-frequency alternating current flows through the second set of electrodes 32b of the electrode assembly between the poles 25c and 25d of the at least one heating voltage source 25. Figure 3 As can be clearly seen, electrodes 32a and 32b of one group are connected in series. Using the connection method shown in the example and by setting two electrodes 54a and 54c, four heating circuits are implemented in the current case.

[0072] Because electrodes 32a and 32b can function as heating resistors when the first switch assembly 23a is closed, the workpiece carrier 30 can operate as a heating device in the first working mode.

[0073] The switching device 22 is also preferably configured to separate the heating voltage source 25 from the workpiece carrier 30 that can be received by the processing chamber, and for this purpose, to electrically connect the plasma voltage source 24 to the workpiece carrier 30, for example by disconnecting the first switching assembly 23a and closing the second switching assembly 23b. The switching device 22 can be configured in particular to integrate the workpiece carrier 30 into the plasma circuit by creating this electrical connection.

[0074] The switching device 22 can be configured, for example, to apply a high-frequency AC voltage between the first group of electrodes 32a and the second group of electrodes 32b when the second switching assembly 23b is closed. For this purpose, the switching device 22 can be configured in particular to connect the first electrode 24a of the plasma voltage source 24 to the first group of electrodes 32a and the second electrode 24b to the second group of electrodes 32b when the second switching assembly 23b is closed.

[0075] Because the first group of electrodes 32a and the second group of electrodes 32b are as follows Figure 3 The locations shown are preferably arranged alternately, and thus a high-frequency electric field can be generated to generate plasma when the second switch assembly 23b is closed, so the workpiece carrier 30 can operate as a plasma device in the second working mode.

[0076] The corresponding control of switch assemblies 23a and 23b can be executed by the control unit; however, for clear reasons, this control unit... Figure 3 It was not shown in the document.

[0077] Figure 4 An example of a method 100 for plasma-assisted chemical vapor deposition is shown.

[0078] Preferably, in method step S1, at least one workpiece carrier is introduced into the processing chamber of an apparatus for plasma-assisted chemical vapor deposition. For this purpose, the workpiece carrier can be pushed into the processing chamber through an opening, for example, via a guiding system (e.g., running wheels arranged in the processing chamber). Here, the workpiece carrier is preferably electrically connected to the switching device of the apparatus. The workpiece carrier can be pushed into the processing chamber, for example, until the contact point on the workpiece carrier makes contact with the contact pin of the current interface of the apparatus arranged in the rear wall region of the processing chamber.

[0079] If the at least one workpiece carrier has been received by the processing chamber (i.e., fully introduced), then in another method step S2, a vacuum is preferably created in the processing chamber. Here, the gas in the processing chamber can be extracted by means of a gas extraction system, particularly via multiple gas outlets in the processing chamber. Providing multiple gas outlets, particularly distributing the gas outlets at the bottom of the processing chamber, allows for particularly efficient vacuuming of the processing chamber.

[0080] In another method step S3, the processing chamber is heated by means of the at least one received workpiece carrier. For this purpose, the workpiece carrier can be integrated into at least one heating circuit for guiding low-frequency alternating current via a switching device. Preferably, the workpiece carrier is connected to at least one heating voltage source to provide a low-frequency alternating voltage. Thus, the low-frequency alternating current can be guided through at least a portion of the workpiece carrier, for example through a plurality of electrodes connected in series, so that the workpiece carrier is at least partially heated.

[0081] If the temperature inside the processing chamber, especially the temperature of the workpiece carrier, has reached or exceeded the predetermined processing temperature, a processing gas (e.g., silanes such as SiH4, trimethyl gas, and / or nitrous oxide N2O) can be fed into the processing chamber in another method step S4. This at least one processing gas can be uniformly blown into the processing chamber via multiple injectors, preferably arranged in the area of ​​the cover of the processing chamber.

[0082] Preferably, in another method step S5, the at least one heating voltage source is separated from the at least one received workpiece carrier. Alternatively, the workpiece carrier can be integrated into a plasma circuit for guiding high-frequency alternating current via a switching device. Preferably, the workpiece carrier is connected to the plasma voltage source to provide a high-frequency alternating voltage. This allows two different potentials to be applied to the two components or groups of components, particularly two different groups of electrodes, such that a high-frequency alternating electric field is formed between the electrodes to generate plasma from the at least one fed processing gas.

[0083] The order of steps S2 to S5 described above is not fixed. Instead, it can be envisioned that, as in... Figure 4 As shown, method steps S2 and S3 are executed at least temporarily simultaneously. Similarly, method steps S4 and S5 can also be executed simultaneously. Here, method step S2 is preferably executed for such a long time that the generated vacuum is maintained for such a long time, until the desired deposition has been achieved on the workpiece supported by the workpiece carrier.

[0084] List of reference numerals

[0085] 1 Equipment

[0086] 2 Processing Room

[0087] 3 Gas Feed System

[0088] 4. Gas extraction system

[0089] 5. Current Interface

[0090] 6. Rear wall

[0091] 7 Contact pins

[0092] 8 running wheels

[0093] 9. Vacuum pump

[0094] 10 Gas exhaust pipeline

[0095] 11 Gas outlet

[0096] 12 Bottom

[0097] 13 Gas inlet pipeline

[0098] 14 Injector

[0099] 15 cover

[0100] 16. Injection feed line

[0101] 17 Opening

[0102] 18 doors

[0103] 19 Stop plate

[0104] 20 Reflecting devices

[0105] 21 Sidewall

[0106] 22 Switching device

[0107] 23a, 23b switch assemblies

[0108] 24 Plasma Voltage Source

[0109] 24a, 24b poles

[0110] 25 Heating voltage source

[0111] 25a-d pole

[0112] 30 Workpiece carrier

[0113] 31 Contact position

[0114] 32a, 32b electrodes

[0115] 50 System

[0116] 100 methods

[0117] S1-S5 Method Steps

Claims

1. An apparatus (1) for plasma-assisted chemical vapor deposition, having a processing chamber (2) for receiving at least one workpiece carrier (30). in, The device (1) is configured to heat the processing chamber (2) by means of at least one workpiece carrier (30) that can be received by the processing chamber (2). Its features are: A switching device (22) is configured to selectively connect at least one receptacle carrier (30) to at least one heating voltage source (25) or plasma voltage source (24), and to selectively integrate at least one workpiece carrier (30) via a current interface (5) into a single plasma circuit for guiding high-frequency alternating current so as to function as a plasma device and to selectively integrate into at least two heating circuits for guiding low-frequency alternating current so as to function as a heating device.

2. The device (1) according to claim 1. Its features are: The switching device (22) has at least two switching components (23a, 23b) configured to interrupt the conductive connection between the at least one heating voltage source (25) and the plasma voltage source (24) and the current interface (5) that can be connected to the workpiece carrier (30).

3. The device (1) according to any one of claims 1-2 above. Its features are: The switching device (22) has a current interface (5) that can be electrically connected to at least one receptable workpiece carrier (30), the current interface having at least four contact pins (7) for electrically contacting the at least one receptable workpiece carrier (30).

4. The device (1) according to claim 3. Its features are: These contact pins (7) are arranged in the area of ​​the rear wall (6) of the processing chamber (2).

5. The device (1) according to any one of claims 1, 2 and 4. Its features are: The processing chamber (2) is configured to receive two workpiece carriers (30).

6. The device (1) according to any one of claims 1, 2 and 4. Its features are: The processing chamber (2) has two closable openings (17) arranged side by side to allow at least one workpiece carrier (30) to be introduced into the processing chamber (2).

7. The device (1) according to any one of claims 1, 2 and 4. Its features are: The processing chamber (2) has at least one reflective device (20) configured to reflect electromagnetic radiation emitted from the at least one receptable workpiece carrier (30) back onto the workpiece carrier (30).

8. The device (1) according to claim 7. Its features are: The processing chamber (2) has three reflective devices (20) arranged substantially at right angles to each other, such that when the workpiece carrier (30) is received in the processing chamber (2), the reflective devices are positioned above and along two opposing longitudinal sides of the workpiece carrier (30).

9. The device (1) according to any one of claims 1, 2, 4 and 8. Its features are: A gas feeding system (3) is used to feed processing gas into the processing chamber (2), wherein the gas feeding system (3) has a plurality of injectors (14) arranged above the workpiece carrier (30) in the area of ​​the cover (15) of the processing chamber (2) to feed processing gas.

10. The device (1) according to any one of claims 1, 2, 4 and 8. Its features are: A gas feeding system (3) is used to feed processing gas into the processing chamber, wherein the gas feeding system (3) has a plurality of injectors (14) formed in the shape of nozzles for targeted injection of processing gas.

11. The device (1) according to claim 10. Its features are: These nozzle-shaped injectors (14) are arranged such that processing gas can be blown into the space between a plurality of parallel electrodes (32a, 32b) of the at least one receptacle carrier (30).

12. The device (1) according to any one of claims 1, 2, 4, 8 and 11. Its features are: A gas extraction system (4) is used to create a vacuum in the processing chamber (2), wherein the gas extraction system (4) has a plurality of gas outlets (11) in the area of ​​the bottom (12) of the processing chamber (2), and these gas outlets are arranged below the workpiece carrier (30) when the workpiece carrier (30) is received, so as to extract the gas.

13. A system (50) for plasma-assisted chemical vapor deposition, comprising an apparatus (1) according to any one of claims 1 to 12 and a workpiece carrier (30) by means of which the processing chamber (2) of the apparatus (1) can be heated.

14. A method for plasma-assisted chemical vapor deposition, wherein, The workpiece carrier (30) is selectively connected to at least one heating voltage source (25) and integrated via a current interface (5) by means of a switching device (22) into at least two heating circuits for guiding low-frequency alternating current so as to function as a heating device. The processing chamber (2) is heated by means of a workpiece or workpiece carrier (30) that can be received by at least the processing chamber (2), and The workpiece carrier (30) is selectively connected to the plasma voltage source (24) and integrated into a single plasma circuit for guiding high-frequency alternating current via the current interface (5) by means of the switching device (22) so as to function as a plasma device.

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