A plasma etching apparatus, method and preparation method combining ICP and CCP

Abstract

The application provides an ICP and CCP combined plasma etching device, method and preparation method, which comprises upper and lower electrodes oppositely arranged in a plasma vacuum reaction chamber; the upper electrode comprises a gas spraying area for spraying gas downward and a edge area surrounding the gas spraying area, the edge area is provided with a plurality of circumferentially uniformly distributed windows, and each window is closed by an insulating piece; wherein a coil is arranged above each insulating piece in one-to-one correspondence, or a coil extending through the above of all insulating pieces along the circumference of the edge area is arranged above the edge area. The application can solve the problems that the existing ICP etching device cannot withstand high-power bias electric field and the CCP etching device is prone to cause relatively low plasma density at the edge of the substrate.

Description

Technical Field

[0001] This invention relates to the field of plasma etching technology, and more particularly to a plasma etching apparatus, method, and preparation method that combines ICP and CCP. Background Technology

[0002] Currently, dry etching, which utilizes plasma, has become the mainstream etching process because it can effectively control the size of the etching openings. In existing semiconductor etching equipment, radio frequency (RF) signals are typically used to generate plasma and apply a bias voltage to the substrate to be processed, enabling the plasma to bombard the substrate and thus etch it.

[0003] Existing etching apparatuses that use radio frequency signals to generate plasma mainly include inductively coupled plasma (ICP) etching apparatuses, capacitively coupled plasma (CCP) etching apparatuses, and electron cyclotron acceleration (ECR) etching apparatuses. Among them, inductively coupled plasma (ICP) etching apparatuses and capacitively coupled plasma (CCP) etching apparatuses are widely used in the field of dry etching due to their simple structure and relatively low cost.

[0004] However, ICP etching apparatus only has a lower electrode and no upper electrode, which limits the feeding of high-power bias power sources (because ICP lacks a ground electrode, resulting in poor grounding and inability to withstand high-power bias electric fields), making it difficult to complete the etching of trenches with high aspect ratios; while CCP etching apparatus is prone to the problem of relatively low plasma density at the edge of the substrate, affecting the uniformity of substrate etching. Summary of the Invention

[0005] To address the shortcomings of the existing technologies, the present invention aims to provide a plasma etching apparatus, method, and preparation method that combines ICP and CCP, in order to solve the problems that existing ICP etching apparatus cannot withstand high-power bias electric fields and CCP etching apparatus tends to result in relatively low plasma density at the substrate edge.

[0006] To achieve the above objectives, the present invention adopts the following technical solution:

[0007] In a first aspect, the present invention provides a plasma etching apparatus combining ICP and CCP, comprising an upper electrode and a lower electrode disposed opposite to each other at the top and bottom of a plasma vacuum reaction chamber.

[0008] The upper electrode includes a gas spraying area for spraying gas downwards and an edge area surrounding the gas spraying area. The edge area has a plurality of windows evenly distributed circumferentially, and each window is closed by an insulating element.

[0009] In this configuration, each of the insulating components is provided with a coil corresponding to the others, or the edge region is provided with a coil that extends circumferentially along the edge region and passes over all the insulating components.

[0010] Furthermore, the insulating member includes a filling portion, the filling portion including a first horizontal plate and a boss extending longitudinally from the first horizontal plate, the first horizontal plate abutting and fixed to the surface of the upper electrode, and the boss filling the corresponding window to close the corresponding window.

[0011] Furthermore, the insulating component also includes a ferrule connector, which includes a second horizontal plate and a slot extending longitudinally from the second horizontal plate. The second horizontal plate and the first horizontal plate are abutted and fixed to the opposite surface of the upper electrode. The slot is installed in the corresponding window so that the boss can be engaged in the slot.

[0012] Furthermore, the device also includes an electrostatic chuck disposed above the lower electrode for fixing the substrate to be processed;

[0013] The bottom surface of the electrostatic chuck is also provided with a heat regulation element, which is divided into multiple radially distributed temperature regulation zones.

[0014] Each of the temperature-regulating areas is provided with a temperature sensor and a circumferentially extending flow channel. Each of the flow channels is connected to a cooling fluid source through a first valve and to a heating fluid source through a second valve.

[0015] Each of the first valve, the second valve, and the temperature sensor is connected to a controller. The controller is used to adjust the opening degree of the corresponding first valve and the second valve based on the difference between the measured value of each temperature sensor and the target temperature of the corresponding temperature control zone.

[0016] Furthermore, the coil is connected to a first radio frequency power source, the upper electrode is grounded, and the lower electrode is connected to a second radio frequency power source and a bias power source.

[0017] Furthermore, the frequencies of the first RF power source, the second RF power source, and the bias power source are 400KHz-100MHz.

[0018] Furthermore, the area of ​​the gas spray zone is greater than 80% of the substrate to be processed.

[0019] Furthermore, the insulating element is made of ceramic or glass material.

[0020] Furthermore, the window is circular or roughly square.

[0021] Secondly, the present invention provides a plasma etching method, comprising:

[0022] Obtain the substrate to be processed;

[0023] The substrate to be processed is fixed above the lower electrode in the plasma etching apparatus as described above, so that the substrate to be processed is etched by the plasma etching apparatus. During the etching process, the coil is connected to a first radio frequency power source, one of the upper electrode and the lower electrode is grounded, and the other is connected to a second radio frequency power source.

[0024] Thirdly, the present invention provides a method for fabricating a plasma etching apparatus, comprising:

[0025] Provides a plasma vacuum reaction chamber;

[0026] An upper electrode and a lower electrode are provided, the upper electrode including a gas spraying zone for spraying gas downwards and an edge zone surrounding the gas spraying zone;

[0027] Several windows are opened in the edge area and are evenly distributed along the circumference.

[0028] An insulating element is provided inside each of the windows to close each of the windows;

[0029] The upper and lower electrodes are positioned opposite each other at the top and bottom of the plasma vacuum reaction chamber;

[0030] Coils are arranged one-to-one on each of the insulating elements, or coils are arranged on the edge area that extend circumferentially along the edge area and pass over all the insulating elements.

[0031] By adopting the above technical solution, the present invention has the following beneficial effects:

[0032] This invention organically combines the structures of ICP and CCP. By setting an upper electrode, one of the upper and lower electrodes can be grounded, thus solving the problem of poor grounding in ICP etching devices and their inability to withstand high-power bias electric fields. By uniformly opening several windows circumferentially in the edge region of the upper electrode, and placing insulating elements within each window to form a dielectric window, the magnetic field generated by the RF power supply applied by the upper coil can pass through the dielectric window. Due to the Faraday cage principle, the electric field below the dielectric window cannot penetrate upwards, thereby generating more plasma at the substrate edge and solving the problem of uneven plasma etching caused by low plasma density at the substrate edge. Therefore, this invention combines the advantages of both ICP and CCP within the same chamber, and isolates the interference between ICP and CCP through upper electrode grounding and Faraday cage technology. It can generate strong magnetic and electric fields within the reaction chamber, improving etching efficiency, alleviating the problem of uneven edge etching, and has a simple structure and low cost, which is beneficial for large-scale application in the semiconductor industry. Attached Figure Description

[0033] Figure 1 A schematic diagram of a traditional ICP etching apparatus;

[0034] Figure 2 This is a schematic diagram of a traditional CCP etching apparatus;

[0035] Figure 3 This is a schematic diagram of the plasma etching apparatus combining ICP and CCP according to Embodiment 1 of the present invention;

[0036] Figure 4 This is a top view of the plasma etching apparatus combining ICP and CCP according to Embodiment 1 of the present invention;

[0037] Figure 5 This is a top view of the plasma etching apparatus combining ICP and CCP according to Embodiment 2 of the present invention;

[0038] Figure 6 This is a schematic diagram of the plasma etching apparatus combining ICP and CCP according to Embodiment 3 of the present invention;

[0039] Figure 7 This is a schematic diagram of the plasma etching apparatus combining ICP and CCP according to Embodiment 4 of the present invention;

[0040] Figure 8 This is a schematic diagram showing the temperature regulation area division of the thermal regulation element in Embodiment 4 of the present invention. Detailed Implementation

[0041] To make the objectives, technical solutions, and advantages of this invention clearer, the invention will be further described in detail below with reference to the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are merely illustrative and not intended to limit the invention. All other embodiments obtained by those skilled in the art based on the embodiments of this invention without inventive effort are within the scope of protection of this invention.

[0042] The terminology used in this invention is for the purpose of describing particular embodiments only and is not intended to be limiting of this disclosure. The singular forms “a,” “the,” and “the” as used in this disclosure and the appended claims are also intended to include the plural forms unless the context clearly indicates otherwise. It should also be understood that the term “and / or” as used herein refers to and includes any and all possible combinations of one or more of the associated listed items.

[0043] Traditional ICP etching equipment such as Figure 1As shown, the main components include a dielectric window 10', a coil 30', and an electrode 20'. The coil 30' is positioned above the dielectric window 10' and connected to an RF power source, while the electrode 20' supports the substrate (e.g., a wafer) to be etched. When etching is required, the RF power source is applied to the coil 30', generating an alternating magnetic field. This generates an electromagnetic induction field in the reaction chamber, accelerating electrons in the gas and generating energy, thus inducing ionization and plasma formation. A bias electric field is then provided to the plasma through a bias power supply, enabling the etching of the substrate. However, due to the lack of a ground electrode, the ICP etching apparatus cannot withstand the bombardment of a high-power bias electric field, making it difficult to etch high aspect ratio trenches.

[0044] Traditional CCP etching equipment, such as Figure 2 As shown, the system mainly includes an upper electrode 10” and a lower electrode 20” positioned opposite each other within the reaction chamber. When an RF power supply is applied, a high-frequency electric field is generated between electrodes 10” and 20”. Gas molecules are excited and ionized in this electric field to form plasma. A bias electric field is then provided to the plasma through a bias power supply, thereby achieving the etching of the substrate to be processed. However, CCP etching devices are prone to causing low plasma density at the substrate edges, affecting the etching uniformity.

[0045] Based on this, the present invention provides a plasma etching apparatus that combines ICP and CCP to solve the problems that existing ICP etching apparatus cannot withstand high-power bias electric fields and CCP etching apparatus is prone to having relatively low plasma density at the substrate edge.

[0046] Example 1

[0047] like Figure 3 and Figure 4 As shown, this embodiment provides a plasma etching apparatus combining ICP and CCP, which mainly includes an upper electrode 10, a lower electrode 20, and a coil 30. Both the upper electrode 10 and the lower electrode 20 are circular electrode plates, coaxially arranged opposite each other within the plasma vacuum reaction chamber. During etching, a substrate to be processed (not shown) is placed above the lower electrode 20. This substrate can be, for example, a silicon wafer, a gallium arsenide wafer, or an indium phosphide wafer.

[0048] See again Figure 3 and Figure 4 As shown, the upper electrode 10 in this embodiment includes a circular gas spray area S1 located in the central region and an annular edge area S2 surrounding the gas spray area S1. The gas spray area S1 is used to spray gas downwards, and the gas spray area S1 and the edge area S2 can be made of the same material or different materials. The thickness of the gas spray area S1 and the edge area S2 can be the same or different. This embodiment does not impose any specific restrictions on this.

[0049] Unlike traditional CCP etching apparatuses, in this embodiment, the upper electrode 10 has several perforated windows 11 evenly distributed around the edge region S2 (e.g., ...). Figure 1 As shown, the window 11 is specifically opened as a longitudinally extending through hole, and each window 11 is closed by an insulating member 12 to form a dielectric window. Among them, a cylindrical coil 30 is arranged above each insulating member 12, the radius of the coil 30 is smaller than the radius of the corresponding window 11 and is coaxially arranged with the corresponding window 11.

[0050] Specifically, such as Figure 4 As shown, several circular windows 11 are uniformly arranged circumferentially in the edge region S2 of the upper electrode 10. A cylindrical insulating element 12 with a matching shape is embedded in each window 11 to form a dielectric window. Above each insulating element 12, one or two coils 30 are arranged coaxially with the corresponding window 11 (all coils 30 should be identical). When the coil 30 is powered by an RF power supply, the magnetic field it generates can pass through the dielectric window to generate plasma within the reaction cavity, thereby enhancing the plasma density at the substrate edge. Simultaneously, based on the Faraday cage principle, the electric field generated within the reaction cavity cannot penetrate the dielectric window, thus ensuring the electric field strength within the reaction cavity.

[0051] Therefore, this embodiment organically combines the structures of ICP and CCP. By setting the upper electrode 10, it can be used for grounding, solving the problem of poor grounding in the ICP etching device and its inability to withstand high-power bias electric fields. At the same time, by uniformly opening several windows 11 around the edge region S2 of the upper electrode 10, and setting insulating parts 12 at each window 11 to form a dielectric window, the magnetic field generated by the RF power supply applied to the coil 30 above the dielectric window can pass through the dielectric window, while the electric field below the dielectric window cannot pass upward, thus solving the problem of uneven etching caused by low plasma density at the substrate edge. It can be seen that this embodiment can form a strong magnetic field and electric field in the reaction chamber. The combination of the metal plate and the dielectric window can adjust the electric field, U value and plasma density, improve etching efficiency, alleviate the problem of uneven edge etching, and has a simple structure and low cost, which is conducive to large-scale application in the semiconductor industry.

[0052] In this embodiment of the plasma etching apparatus, the coil 30 is connected to a first radio frequency (RF) power source, the upper electrode 10 is grounded, and the lower electrode 20 can be connected to multiple RF power sources, including a second RF power source and a bias power source. The RF signal generated by the first RF power source produces a magnetic field through the coil 30; the RF signal generated by the second RF power source plasmaizes the gas in the reaction chamber through the capacitance formed by the upper electrode 10 and the lower electrode 20; and the bias power source forms a bias voltage on the substrate to be processed on the upper surface of the lower electrode 20 to achieve etching of the substrate.

[0053] In a preferred embodiment, the frequencies of the first radio frequency power source, the second radio frequency power source, and the bias power source are all 400KHz-100MHz.

[0054] In a preferred embodiment, a sealing element (not shown) may also be provided between the insulating element 12 and the window 11 to improve the sealing performance between the insulating element 12 and the window 11.

[0055] See again Figure 3 As shown, a gas buffer chamber 13 is formed above the gas spray zone S1 of the upper electrode 10. This gas buffer chamber 13 is connected to an external gas supply device (not shown) to provide reaction gas. The reaction gas can be one or more mixtures of Cl2, BCl3, Ar, and N2. Simultaneously, the gas spray zone S1 is uniformly provided with a plurality of air inlets 14 communicating with the gas buffer chamber 13, allowing the reaction gas in the gas buffer chamber 13 to enter the reaction chamber through these air inlets 14 and generate plasma under the influence of a magnetic field and an electric field. Preferably, the area of ​​the gas spray zone S1 is greater than 80% of the area of ​​the substrate to be processed.

[0056] In addition, such as Figure 3 As shown, the plasma etching apparatus of this embodiment may further include a cavity liner 40 for protecting the inner wall of the reaction chamber.

[0057] It should be understood that the insulating element 12 in this embodiment can be made of any suitable insulating material such as ceramic or glass, and the present invention does not impose any specific limitations on this.

[0058] Example 2

[0059] This embodiment provides a plasma etching apparatus combining ICP and CCP. For example... Figure 5 As shown, unlike Embodiment 1, this embodiment has a plurality of generally square windows 11 uniformly opened in the circumferential direction in the edge region S2 of the upper electrode 10. The length direction of each window 11 extends radially along the upper electrode 10 and is closed by an insulating member 12 to form a dielectric window. A cylindrical coil 30 extending in the circumferential direction and passing over all the insulating members 12 is arranged above the edge region S2. The coil 30 is preferably arranged above the center of each window 11.

[0060] When the coil 30 is powered by an RF power supply, the magnetic field it generates can pass through the dielectric window to generate plasma in the reaction cavity, thereby enhancing the plasma density at the edge of the substrate; at the same time, based on the Faraday cage principle, the electric field generated in the reaction cavity cannot pass through the dielectric window, thus ensuring the electric field strength in the reaction cavity.

[0061] It should be understood that, in addition to the above, window 11 in this embodiment... Figure 4 , Figure 5Besides being constructed into a circular or roughly square shape, it can also be constructed into any other suitable shape. This embodiment does not impose any specific limitations on this.

[0062] Example 3

[0063] This embodiment provides another implementation of the insulating member 12 based on embodiments 1 and 2. Specifically, as follows... Figure 6 As shown, the insulating member 12 in this embodiment includes a filling portion 121, which includes a first horizontal plate 1211 and a boss 1212 extending longitudinally from the center of the first horizontal plate 1211. The first horizontal plate 1211 is fixed to the surface of the upper electrode 10, and the boss 1212 fills the corresponding window 11 to close the corresponding window 11. By way of example and not limitation, the first horizontal plate 1211 is circular, and the boss 1212 is cylindrical.

[0064] Furthermore, the insulating component 12 in this embodiment may also include a ferrule connector 122, which includes a second horizontal plate 1221 and a slot 1222 extending longitudinally from the center of the second horizontal plate 1221. During installation, the second horizontal plate 1221 and the first horizontal plate 1211 are abutted and fixed to the opposite surface of the upper electrode 10, the slot 1222 is installed in the corresponding window 11 and its outer wall is sealed to the hole wall of the window 11, and the boss 1212 is engaged in the slot 1222. By way of example and not limitation, the second horizontal plate 1212 is circular, the slot 1222 is cylindrical, and a sealing element may be provided between the first horizontal plate 1211 and / or the second horizontal plate 1221 and the surface of the upper electrode 10.

[0065] Example 4

[0066] like Figure 7 As shown, in this embodiment, an electrostatic chuck 50 is preferably used to fix the substrate to be processed above the lower electrode 20. During the etching process of the substrate, the plasma gas reacting ions will chemically react with the material on the substrate surface, and the local substrate temperature and the chemical reaction ratio are interrelated.

[0067] In the plasma etching process of multilayer substrates, it is possible that the etching of one layer requires a hotter central region than the edge region, while the etching of another layer requires a cooler central region than the edge region. Therefore, the etching apparatus needs to have the ability to control the temperature distribution from the center to the edge of the substrate. To address this, this embodiment adds a circular thermal regulation element 60 to the bottom of the electrostatic chuck 50 to improve the control of the radial temperature of the substrate, thereby achieving an ideal substrate temperature distribution.

[0068] In this embodiment, the substrate to be processed, the electrostatic chuck 50, the thermal conditioning element 60, and the lower electrode 20 are coaxially arranged. Figure 8As shown, the thermal regulating element 50 is divided into multiple radially distributed temperature regulating zones (the figure exemplarily shows seven zones, Z1 to Z7, but this embodiment does not impose any limitation on the number of high-temperature zones). These multiple temperature regulating zones surround the thermal regulating element 60 from the inside out. Each temperature regulating zone is provided with a circumferentially extending flow channel (not shown). Each flow channel is connected to a cooling fluid source (not shown) via a first valve (not shown) and to a heating fluid source (not shown) via a second valve (not shown).

[0069] When the first valve is opened and the second valve is closed, the cooling fluid source provides cooling liquid to the corresponding flow channel to remove the heat from the corresponding area of ​​the substrate during the processing. The cooling fluid flows through the corresponding flow channel and then flows back to the cooling fluid source for recycling.

[0070] When the second valve is open and the first valve is closed, the heating fluid source provides hot fluid to the corresponding flow channel to heat the corresponding area of ​​the substrate. The hot fluid flows through the corresponding flow channel and then flows back to the heating fluid source for recycling.

[0071] In this embodiment, each temperature control zone is also equipped with a corresponding temperature sensor (not shown) to measure the temperature of the corresponding zone. Each temperature sensor, as well as each first valve and second valve, are connected to a controller (not shown), which enables the controller to adjust the opening of the corresponding first valve and second valve based on the difference between the measured value of each temperature sensor and the target temperature of the corresponding zone, thereby achieving independent temperature adjustment of different zones of the substrate to be processed and achieving an ideal substrate temperature distribution.

[0072] Preferably, a heat insulation layer (not shown) is provided between each flow channel to isolate heat transfer between different flow channels and avoid mutual interference.

[0073] Example 5

[0074] This embodiment provides a plasma etching method, which specifically includes the following steps:

[0075] S11, Obtain the substrate to be processed, which may be, for example, a silicon wafer, a gallium arsenide wafer, or an indium phosphide wafer that needs to be plasma etched.

[0076] S12, the substrate to be processed is placed in the plasma vacuum reaction chamber of the plasma etching apparatus provided in any of the aforementioned embodiments 1 to 4, and fixed above the lower electrode 20, so that the substrate to be processed is etched by the etching apparatus. During the etching process, the coil 30 is connected to the first radio frequency power source, one of the upper electrode and the lower electrode is grounded, and the other is connected to the second radio frequency power source.

[0077] Since this embodiment uses any one of the plasma etching devices provided in embodiments 1 to 4 above for etching, a strong magnetic field and electric field can be formed in the reaction chamber, which improves the etching efficiency and alleviates the problem of uneven etching at the substrate edge.

[0078] Example 6

[0079] This embodiment provides a method for fabricating a plasma etching device, which specifically includes the following steps:

[0080] S21 provides a plasma vacuum reaction chamber.

[0081] S22, an upper electrode 10 and a lower electrode 20 are provided, wherein the upper electrode 10 includes a gas spraying area S1 for spraying gas downward and an edge area S2 surrounding the gas spraying area S1.

[0082] S23, several windows 11 are evenly distributed along the circumference in the edge area S2. Each window 11 is circular or roughly square. Of course, it can also be constructed into any other suitable shape. This embodiment does not impose any specific restrictions on this.

[0083] S24, an insulating element 12 is provided inside each window 11 to close each window 11. The insulating element 12 can be made of any suitable insulating material such as ceramic or glass, and the present invention does not impose any specific limitations on it.

[0084] S25, the upper electrode 10 and the lower electrode 20 are positioned opposite each other in the plasma vacuum reaction chamber.

[0085] S26, coils 30 are arranged one-to-one on each of the insulating components 12 (see...). Figure 3 Alternatively, a coil 30 extending circumferentially along the edge region and passing over the entire insulating member 12 may be arranged on the edge region (see...). Figure 4 ).

[0086] During etching, coil 30 is connected to a first radio frequency (RF) power source, upper electrode 10 is grounded, and lower electrode 20 can be connected to multiple RF power sources, including a second RF power source and a bias power source. The RF signal generated by the first RF power source produces a magnetic field through coil 30; the RF signal generated by the second RF power source plasmas the gas in the reaction chamber through the capacitance formed by upper electrode 10 and lower electrode 20; and the bias power source forms a bias voltage on the substrate to be processed on the upper surface of lower electrode 20 to achieve etching of the substrate.

[0087] In a preferred embodiment, the frequencies of the first radio frequency power source, the second radio frequency power source, and the bias power source are all 400KHz-100MHz.

[0088] This embodiment combines the advantages of ICP and CCP. By setting an upper electrode 10, which can be used for grounding, it solves the problem of poor grounding in ICP etching devices, which cannot withstand high-power bias electric fields. Simultaneously, by uniformly opening several windows 11 around the edge region S2 of the upper electrode 10, and setting insulating elements 12 at each window 11 to form a dielectric window, the magnetic field generated by the RF power supply applied to the coil 30 above the dielectric window can pass through the dielectric window, while the electric field below the dielectric window cannot pass upwards. This solves the problem of uneven etching caused by low plasma density at the substrate edge. Therefore, this embodiment can generate a strong magnetic and electric field within the reaction chamber, improving etching efficiency, alleviating the problem of uneven edge etching, and has a simple structure and low cost, which is beneficial for large-scale application in the semiconductor industry.

[0089] While specific embodiments of the present invention have been described above, those skilled in the art should understand that these are merely illustrative examples, and the scope of protection of the present invention is defined by the appended claims. Those skilled in the art can make various changes or modifications to these embodiments without departing from the principles and essence of the present invention, but all such changes and modifications fall within the scope of protection of the present invention.

Claims

1. A plasma etching apparatus combining ICP and CCP, characterized in that, This includes an upper electrode and a lower electrode that are positioned relative to each other at the top and bottom of the plasma vacuum reaction chamber; The upper electrode includes a gas spraying area for spraying gas downwards and an edge area surrounding the gas spraying area. The edge area has a plurality of windows evenly distributed circumferentially, and each window is closed by an insulating member to form a dielectric window. The insulating component includes a filling portion, which includes a first horizontal plate and a boss extending longitudinally from the first horizontal plate. The first horizontal plate abuts and is fixed to the surface of the upper electrode, and the boss fills the corresponding window to close the corresponding window. In this configuration, each of the insulating components is provided with a coil corresponding to the others, or a coil is provided on the edge region that extends circumferentially along the edge region and passes over all the insulating components. The coil is connected to a first radio frequency power source, and one of the upper electrode and the lower electrode is grounded, while the other is connected to a second radio frequency power source.

2. The plasma etching apparatus as described in claim 1, characterized in that, The insulating component also includes a ferrule connector, which includes a second horizontal plate and a slot extending longitudinally from the second horizontal plate. The second horizontal plate and the first horizontal plate are abutted and fixed to the opposite surface of the upper electrode. The slot is installed in the corresponding window so that the boss can be engaged in the slot.

3. The plasma etching apparatus as described in claim 1, characterized in that, The device also includes an electrostatic chuck disposed above the lower electrode for fixing the substrate to be processed; The bottom surface of the electrostatic chuck is also provided with a heat regulation element, which is divided into multiple radially distributed temperature regulation zones. Each of the temperature-regulating areas is provided with a temperature sensor and a circumferentially extending flow channel. Each of the flow channels is connected to a cooling fluid source through a first valve and to a heating fluid source through a second valve. Each of the first valve, the second valve, and the temperature sensor is connected to a controller, which is used to adjust the opening degree of the corresponding first valve or second valve based on the difference between the measured value of each temperature sensor and the target temperature of the corresponding temperature control zone.

4. The plasma etching apparatus as described in claim 1, characterized in that, The upper electrode is grounded, and the lower electrode is connected to the second radio frequency power source and the bias power source.

5. The plasma etching apparatus as described in claim 4, characterized in that, The frequencies of the first RF power source, the second RF power source, and the bias power source are 400KHz-100MHz.

6. The plasma etching apparatus as described in claim 1, characterized in that, The area of ​​the gas spray zone is greater than 80% of the substrate to be processed.

7. The plasma etching apparatus as claimed in claim 1, characterized in that, The insulating element is made of ceramic or glass material.

8. The plasma etching apparatus as claimed in claim 1, characterized in that, The window is either circular or square.

9. A plasma etching method, characterized in that, include: Obtain the substrate to be processed; The substrate to be processed is fixed above the lower electrode in the plasma etching apparatus as described in any one of claims 1 to 8, so that the substrate to be processed is etched by the plasma etching apparatus. During the etching process, the coil is connected to a first radio frequency power source, one of the upper electrode and the lower electrode is grounded, and the other is connected to a second radio frequency power source.

10. A method for fabricating a plasma etching apparatus, characterized in that, include: Provides a plasma vacuum reaction chamber; An upper electrode and a lower electrode are provided, the upper electrode including a gas spraying zone for spraying gas downwards and an edge zone surrounding the gas spraying zone; Several windows are opened in the edge area and are evenly distributed along the circumference. An insulating element is provided in each of the windows to close each window and form a dielectric window. The insulating element includes a filling part, which includes a first horizontal plate and a protrusion extending longitudinally from the first horizontal plate. The first horizontal plate abuts and is fixed to the surface of the upper electrode. The protrusion fills the corresponding window to close the corresponding window. The upper and lower electrodes are positioned opposite each other at the top and bottom of the plasma vacuum reaction chamber; Coils are arranged one-to-one on each of the insulating components, or coils are arranged on the edge area that extend circumferentially along the edge area and pass over all the insulating components. The coils are connected to a first radio frequency power source, one of the upper electrode and the lower electrode is grounded, and the other is connected to a second radio frequency power source.

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