Method of separating element impedance response to humidity and gap

Abstract

The application discloses a method for separating humidity and gap response of element impedance, which comprises the following steps: sequentially plating a spiral gap single-sensitive layer, a gap single-sensitive insulating layer, a gap single-sensitive electrode layer, a lead layer, a gap humidity double-sensitive insulating layer, a gap humidity double-sensitive electrode layer and a spiral gap humidity double-sensitive layer on a substrate layer to obtain a single sensitive element capable of simultaneously responding to humidity excitation and gap excitation; when the sensitive element is simultaneously applied with humidity excitation and gap excitation, the difference between the equivalent impedance change amount between the gap humidity double-sensitive electrode layer and the lead layer and the equivalent impedance change amount between the gap single-sensitive electrode layer and the lead layer is the impedance response of the sensitive element caused by the single humidity excitation, so as to separate the humidity response and the gap response. The method for separating humidity and gap response of element impedance can not only simultaneously respond to humidity excitation and gap excitation, but also separate the responses, and has the potential for developing a humidity and gap double-sensitive probe.

Description

Technical Field

[0001] This invention relates to the field of sensors, and in particular to the field of humidity sensors. Background Technology

[0002] Multimodal detection and composite sensing are important directions for future sensor development. The narrow gaps between layers inside modern industrial equipment are crucial to its performance and safety, thus creating a need for gap detection. Simultaneously, high humidity inside modern industrial equipment can cause rust and short circuits, necessitating humidity detection. Therefore, achieving simultaneous detection of both gaps and humidity within modern industrial equipment is a pressing issue. Traditional non-contact gap sensing elements typically use metal probes with non-contact sensing layers, lacking humidity sensitivity. Traditional humidity sensors, with their sandwich structure of interdigitated electrodes coated with a sensitive material, also lack non-contact gap sensing. Thus, simultaneous detection of both variables requires the installation of two separate sensors, a solution with limitations. Firstly, frequently switching between different sensing elements to meet varying measurement needs is cumbersome; secondly, simultaneous measurement of multiple variables requires multiple sensing elements, leading to high costs and limited installation environments. This is especially problematic in confined measurement environments with complex internal structures, making simultaneous installation and detection of multiple sensing elements difficult. Therefore, researching a single sensing element capable of simultaneously measuring humidity and non-contact gaps, along with its fabrication method, is essential. Summary of the Invention

[0003] To address the problems of existing sensing elements having limited functionality and difficulties in separating the responses of multifunctional sensing elements, this invention provides a method for separating the impedance of a sensing element in response to humidity and gap excitation. The method involves sequentially depositing a spiral gap single-sensor layer, a gap single-sensor insulating layer, a gap single-sensor electrode layer, a lead layer, a gap-humidity dual-sensor insulating layer, a gap-humidity dual-sensor electrode layer, and a spiral gap-humidity dual-sensor layer on a substrate to obtain a single sensing element capable of simultaneously responding to humidity excitation and gap excitation, and facilitating response separation. Furthermore, the spiral gap single-sensor layer and the spiral gap-humidity dual-sensor layer have identical linewidth, line spacing, and number of turns in their planar spiral structures. When the sensing element is subjected to gap excitation and AC current is applied, the spiral gap single-sensor layer generates a gap-sensitive effect, producing an induced magnetic field that alters the equivalent impedance between the gap single-sensor electrode layer and the lead layer, responding to the gap excitation. Simultaneously, the spiral gap-humidity dual-sensor layer also generates a gap-sensitive effect, producing an induced magnetic field. The field changes the equivalent impedance between the gap humidity dual-sensitive electrode layer and the lead layer in response to the gap excitation. When the sensitive element is subjected to humidity excitation, the spiral gap single-sensitive layer does not respond to humidity excitation; only the spiral gap humidity dual-sensitive layer responds to humidity excitation, adsorbing water molecules and changing conductivity, thereby changing the equivalent impedance between the gap humidity dual-sensitive electrode layer and the lead layer. When the sensitive element is subjected to both humidity excitation and gap excitation simultaneously, the change in equivalent impedance between the gap humidity dual-sensitive electrode layer and the lead layer responds to both humidity excitation and gap excitation simultaneously, while the change in equivalent impedance between the gap single-sensitive electrode layer and the lead layer only responds to gap excitation. Therefore, the difference between the change in equivalent impedance between the gap humidity dual-sensitive electrode layer and the lead layer and the change in equivalent impedance between the gap single-sensitive electrode layer and the lead layer is the impedance response of the sensitive element caused by the single humidity excitation, thus separating the humidity response and the gap response.

[0004] In one embodiment, the substrate layer is made of ceramic, the gap single-sensitive insulating layer and the gap humidity dual-sensitive insulating layer are made of Al2O3, the spiral gap single-sensitive layer and the spiral gap humidity dual-sensitive layer are made of ZnO; the lead layer, the gap sensitive electrode layer and the gap humidity dual-sensitive electrode layer are made of ZnO.

[0005] In one embodiment, the spiral gap single-sensitive layer isolates the contact between air and water molecules because it is covered by the gap single-sensitive insulating layer and the gap humidity dual-sensitive insulating layer.

[0006] In one embodiment, the sequential deposition of a spiral gap single-sensitive layer, a gap single-sensitive insulating layer, a gap single-sensitive electrode layer, a lead layer, a gap humidity dual-sensitive insulating layer, a gap humidity dual-sensitive electrode layer, and a spiral gap humidity dual-sensitive layer on a substrate layer yields a single sensitive element capable of simultaneously responding to humidity excitation and gap excitation, and facilitating response separation; specifically:

[0007] (1) After ultrasonic cleaning of the substrate and stainless steel mask in deionized water and acetone, they are dried with nitrogen gas for later use.

[0008] (2) Fabrication of a spiral-gap single-sensor layer by magnetron sputtering;

[0009] (3) A gap single-sensitive insulating layer is prepared by physical vapor deposition on the spiral gap single-sensitive layer;

[0010] (4) The gap-sensitive electrode layer is prepared by magnetron sputtering on the gap-sensitive insulating layer;

[0011] (5) A magnetron sputtering lead layer is applied to the gap single-sensitive insulating layer and the gap sensitive electrode layer;

[0012] (6) A gap humidity dual-sensitive insulating layer is deposited by physical vapor deposition on the lead layer and the gap single-sensitive insulating layer;

[0013] (7) A gap humidity dual-sensitive electrode layer is prepared by magnetron sputtering on the gap humidity dual-sensitive insulating layer;

[0014] (8) A spiral gap humidity dual-sensitive layer is prepared by magnetron sputtering on the gap humidity dual-sensitive electrode layer and the gap humidity dual-sensitive insulating layer;

[0015] (9) Anneal the sensitive element prepared in step (8);

[0016] This allows for the fabrication of a sensitive element with a double-layered helical structure that facilitates the separation of humidity and gap responses.

[0017] In one embodiment, the deposition time for the gap humidity dual-sensitive insulation layer and the gap single-sensitive insulation layer is more than 1 hour.

[0018] In one embodiment, the sputtering time is the same for the gap humidity dual-sensing layer and the gap single-sensing layer.

[0019] The beneficial effects of the above-mentioned method for separating the impedance of the element in response to humidity and gap are as follows:

[0020] (1) The spiral gap humidity dual-sensing layer can respond to humidity and gap excitation simultaneously.

[0021] (2) The spiral gap single-sensor layer can respond to a single gap excitation in a non-contact manner.

[0022] (3) The unique double-layer spiral structure facilitates the separation of humidity response and gap response by impedance change between different leads.

[0023] (4) The process is simple and controllable. The sensitive element has high sensitivity. The insulating layer film prepared by the evaporation coating process ensures the insulation between the sensitive layers. The materials of the gap sensitive electrode layer, the gap humidity dual sensitive electrode layer and the lead layer prepared by the magnetron sputtering coating process are consistent, avoiding the introduction of metal conductors and interference with the eddy current magnetic field. Attached Figure Description

[0024] Figure 1 This is a schematic diagram of the component structure and a flowchart of the manufacturing process of the present invention;

[0025] Figure reference numerals: a. Spiral gap single-sensitive layer; b. Gap single-sensitive insulating layer; c. Gap single-sensitive electrode layer; d. Lead layer; e. Humidity gap dual-sensitive electrode layer; f. Gap humidity dual-sensitive insulating layer; g. Gap humidity dual-sensitive layer; h. Substrate layer. Detailed Implementation

[0026] To facilitate understanding of the present invention, a more comprehensive description is provided below, along with preferred embodiments. However, the present invention can be implemented in many different forms and is not limited to the embodiments described herein. Rather, these embodiments are provided to provide a thorough and complete understanding of the disclosure of the present invention.

[0027] Unless otherwise defined, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this invention pertains. The terminology used herein in the description of the invention is for the purpose of describing particular embodiments only and is not intended to be limiting of the invention.

[0028] A method for separating the impedance of an element in response to humidity and gap, specifically:

[0029] (1) After ultrasonic cleaning of the ceramic substrate and stainless steel mask in deionized water and acetone, they are dried with nitrogen for later use.

[0030] (2) A spiral gap single-sensor layer with a spiral structure was prepared on the surface of a ceramic substrate by magnetron sputtering using a stainless steel mask and a ZnO target.

[0031] (3) An Al2O3 material gap single-sensitive insulating layer is prepared on the spiral gap single-sensitive layer by physical vapor deposition using a stainless steel mask;

[0032] (4) The gap-sensitive electrode layer is prepared on the gap-sensitive insulating layer by magnetron sputtering using a ZnO target and a stainless steel mask;

[0033] (5) A lead layer is sputtered onto the gap single-sensitive insulating layer and the gap sensitive electrode layer by magnetron sputtering using a ZnO target and a stainless steel mask;

[0034] (6) An Al2O3 material gap humidity dual-sensitive insulating layer is prepared on the lead layer and the gap single-sensitive insulating layer by physical vapor deposition using a stainless steel mask;

[0035] (7) A gap humidity-sensitive electrode layer is prepared on the gap humidity-sensitive insulating layer by magnetron sputtering of ZnO target material;

[0036] (8) A spiral gap humidity dual-sensitive layer is prepared on the gap humidity dual-sensitive electrode layer and the gap humidity dual-sensitive insulating layer by magnetron sputtering of ZnO target material;

[0037] (9) The sensitive element prepared in step (8) is annealed in a high-temperature environment;

[0038] This allows for the fabrication of a sensitive element exhibiting a double-layered helical structure, facilitating the separation of humidity and gap response. For example... Figure 1As shown, a single sensitive element capable of simultaneously responding to humidity excitation and gap excitation and facilitating response separation is obtained by sequentially depositing a spiral gap single-sensitive layer a, a gap single-sensitive insulating layer b, a gap single-sensitive electrode layer c, a lead layer d, a gap humidity dual-sensitive insulating layer e, a gap humidity dual-sensitive electrode layer f, and a spiral gap humidity dual-sensitive layer g on a substrate layer h. The substrate layer material is ceramic, the gap single-sensitive insulating layer and the gap humidity dual-sensitive insulating layer are made of Al2O3, and the spiral gap single-sensitive layer and the spiral gap humidity dual-sensitive layer are made of ZnO. The lead layer, the gap sensitive electrode layer, and the gap humidity dual-sensitive electrode layer are all made of ZnO. Furthermore, the linewidth, line spacing, and number of turns of the planar spiral structure of the spiral gap single-sensitive layer and the spiral gap humidity dual-sensitive layer are all the same. When the sensitive element is subjected to gap excitation and AC current is applied, the spiral gap single-sensitive layer generates a gap-sensitive effect, producing an induced magnetic field that changes the equivalent impedance between the gap single-sensitive electrode layer and the lead layer, responding to the gap excitation. At the same time, the spiral gap humidity dual-sensitive layer also generates a gap-sensitive effect, producing an induced magnetic field that changes the equivalent impedance between the gap humidity dual-sensitive electrode layer and the lead layer, responding to the gap excitation. However, when the sensitive element is subjected to humidity excitation, due to being covered by the gap single-sensitive insulating layer and the gap humidity dual-sensitive insulating layer, the spiral gap single-sensitive layer isolates the contact of air water molecules. The spiral gap single-sensor layer does not respond to humidity excitation; only the spiral gap dual-sensor layer responds to humidity excitation, adsorbing water molecules and changing the conductivity, thereby altering the equivalent impedance between the gap dual-sensor electrode layer and the lead layer. When the sensitive element is simultaneously subjected to humidity excitation and gap excitation, the change in equivalent impedance between the gap dual-sensor electrode layer and the lead layer responds to both humidity excitation and gap excitation simultaneously, while the change in equivalent impedance between the gap single-sensor electrode layer and the lead layer only responds to gap excitation. Therefore, the difference between the change in equivalent impedance between the gap dual-sensor electrode layer and the lead layer and the change in equivalent impedance between the gap single-sensor electrode layer and the lead layer is the impedance response of the sensitive element caused by the single humidity excitation, thus separating the humidity response and the gap response. Specific Implementation Example 1

[0040] A method for separating the impedance of an element in response to humidity and gap, specifically:

[0041] (1) Place the ceramic substrate and the stainless steel mask in deionized water and acetone for ultrasonic cleaning for 10 minutes, and then dry them with nitrogen gas for later use.

[0042] (2) A ceramic substrate with dimensions of 50mm×38.5mm×1mm and a stainless steel mask with outer dimensions of 50mm×38.5mm×0.05mm were simultaneously fixed in the magnetron sputtering working chamber. The target material was ZnO. Radio frequency sputtering was used. The background vacuum was adjusted to 8E-4Pa, the sputtering pressure was 0.5Pa, the power was 100W, and argon gas with a flow rate of 40sccm was introduced. The sample stage rotation speed was 10r / min. A spiral gap single sensitive layer of ZnO material was prepared by magnetron sputtering for 15 minutes.

[0043] (3) The sample prepared in step (2) and a stainless steel mask with an outer size of 50mm×38.5mm×0.05mm are simultaneously fixed in the vacuum coating chamber. A 2nm thick Al2O3 material gap single sensitive insulating layer is prepared by physical vapor deposition. The target material is Al3O2, heated to 200℃, held for 30 minutes, then gasified, and sampled.

[0044] (4) Place the sample prepared in step (3) and a stainless steel mask with an outer size of 50mm×38.5mm×0.05mm in the magnetron sputtering cavity and sputter for 5 minutes to prepare a gap-sensitive electrode layer of ZnO material.

[0045] (5) Then, the sample prepared in step (4) and a stainless steel mask with an outer size of 50mm×38.5mm×0.05mm are placed in the magnetron sputtering cavity and sputtered for 5 minutes to prepare ZnO material and lead layer.

[0046] (6) The sample prepared in step (5) and the mask V with an outer size of 50mm×38.5mm×0.05mm are fixedly placed in the vacuum coating chamber. The target material for evaporation is Al3O2. The sample and the mask are heated to 200℃ and held for 30 minutes. Then gas is added to prepare a 2nm thick Al3O2 material gap humidity dual-sensitive insulating layer and a sample is taken.

[0047] (7) The sample prepared in step (6) is magnetron sputtered for 5 minutes using a stainless steel mask III with outer dimensions of 50mm×38.5mm×0.05mm to prepare a gap humidity dual-sensitive electrode layer.

[0048] (8) The sample prepared in step (7) and the mask with an outer size of 50mm×38.5mm×0.05mm are fixedly placed in the magnetron sputtering working chamber. The target material is ZnO. Radio frequency sputtering is used. The background vacuum is adjusted to 8E-4Pa, the sputtering pressure is 0.5Pa, the power is 100W, and argon gas with a flow rate of 40sccm is introduced. The sample stage speed is 10r / min. The spiral gap humidity-sensitive layer of ZnO material is prepared by magnetron sputtering for 15 minutes.

[0049] (9) Anneal at 400℃-450℃ for more than 6 hours.

[0050] This process yielded a sensitive element with a double-layer helical structure, facilitating the separation of humidity and gap responses. When the sensitive element was placed under humidity excitation (11% RH) and a gap excitation (1 mm) consisting of a 304# stainless steel metal target, the positive and negative terminals of a TH2822E handheld LCR meter impedance analyzer were connected to the gap humidity dual-sensitive electrode layer and the lead layer, respectively. Under 1MHz, 5V AC excitation, the equivalent impedance value was measured to be 3.5 × 10⁻⁶. 6 Ω.

[0051] The positive and negative terminals of the TH2822E handheld LCR meter impedance analyzer were connected to the gap-type single-sensitive electrode layer and the lead layer, respectively. Under 1MHz, 5V AC excitation, the equivalent impedance value was measured to be 1.6×10⁻⁶. 6 Ω.

[0052] Therefore, under dual excitation of humidity and gap, with a 5V, 1MHz input voltage, the impedance response of the sensing element is 3.5×10⁻⁶. 6 Ω.

[0053] Under a single humidity excitation (11% RH), with a sensing element input of 5V and 1MHz, the impedance response is 1.9 × 10⁻⁶. 6 Ω.

[0054] Under a single gap excitation (1 mm), with a sensing element input of 5 V and 1 MHz, the impedance response is 1.6 × 10⁻⁶. 6 Ω.

[0055] This enables the sensitive element to respond to both humidity excitation and gap excitation simultaneously, and achieves separation of humidity and gap responses. Specific Implementation Example 2

[0057] A method for separating the impedance of an element in response to humidity and gap, specifically:

[0058] (1) Place the ceramic substrate and the stainless steel mask in deionized water and acetone for ultrasonic cleaning for 15 minutes, and then dry them with nitrogen gas for later use.

[0059] (2) A ceramic substrate with dimensions of 50mm×38.5mm×1mm and a stainless steel mask with outer dimensions of 50mm×38.5mm×0.05mm were simultaneously fixed in the magnetron sputtering working chamber. The target material was ZnO. Radio frequency sputtering was used. The background vacuum was adjusted to 8E-4Pa, the sputtering pressure was 0.5Pa, the power was 120W, and argon gas with a flow rate of 40sccm was introduced. The sample stage rotation speed was 8r / min. A spiral gap single sensitive layer of ZnO material was prepared by magnetron sputtering for 15 minutes.

[0060] (3) The sample prepared in step (2) and a stainless steel mask with an outer size of 50mm×38.5mm×0.05mm are simultaneously fixed in the vacuum coating chamber. A 2nm thick Al2O3 material gap single sensitive insulating layer is prepared by physical vapor deposition. The target material is Al3O2, heated to 200℃, held for 30 minutes, then gasified, and sampled.

[0061] (4) Place the sample prepared in step (3) and a stainless steel mask with an outer size of 50mm×38.5mm×0.05mm in the magnetron sputtering cavity and sputter for 5 minutes to prepare a gap-sensitive electrode layer of ZnO material.

[0062] (5) Then, the sample prepared in step (4) and a stainless steel mask with an outer size of 50mm×38.5mm×0.05mm are placed in the magnetron sputtering cavity and sputtered for 5 minutes to prepare ZnO material and lead layer.

[0063] (6) The sample prepared in step (5) and the mask V with an outer size of 50mm×38.5mm×0.05mm are fixedly placed in the vacuum coating chamber. The target material for evaporation is Al3O2. The sample and the mask are heated to 200℃ and held for 30 minutes. Then gas is added to prepare a 2nm thick Al3O2 material gap humidity dual-sensitive insulating layer and a sample is taken.

[0064] (7) The sample prepared in step (6) is magnetron sputtered for 5 minutes using a stainless steel mask III with outer dimensions of 50mm×38.5mm×0.05mm to prepare a gap humidity dual-sensitive electrode layer.

[0065] (8) The sample prepared in step (7) and the mask with an outer size of 50mm×38.5mm×0.05mm are fixedly placed in the magnetron sputtering working chamber. The target material is ZnO. Radio frequency sputtering is used. The background vacuum is adjusted to 8E-4Pa, the sputtering pressure is 0.5Pa, the power is 120W, and argon gas with a flow rate of 40sccm is introduced. The sample stage speed is 10r / min. The spiral gap humidity-sensitive layer of ZnO material is prepared by magnetron sputtering for 15 minutes.

[0066] (9) Anneal at 600℃ for more than 4 hours.

[0067] This process yields a sensitive element with a double-layer helical structure, facilitating the separation of humidity and gap response. When the sensitive element is placed under humidity excitation (98% RH) and a gap excitation (2 mm) composed of a 304# stainless steel metal target, the positive and negative terminals of a TH2822E handheld LCR meter are connected to the gap humidity dual-sensitive electrode layer and the lead layer, respectively. Under 1MHz, 5V AC excitation, the equivalent impedance value is measured to be 1.7 × 10⁻⁶. 6 Ω.

[0068] The positive and negative terminals of the TH2822E handheld LCR meter impedance analyzer were connected to the gap single-sensitive electrode layer and the lead layer, respectively. Under 1MHz, 5V AC excitation, the equivalent impedance value was measured to be 3×10⁻⁶. 5 Ω.

[0069] Therefore, under dual excitation of humidity and gap, with a 5V, 1MHz input voltage, the impedance response of the sensing element is 1.7 × 10⁻⁶. 6 Ω.

[0070] Under a single humidity excitation (98% RH), with a sensing element input of 5V and 1MHz, the impedance response is 1.4 × 10⁻⁶. 6 Ω.

[0071] Under a single gap excitation (2mm), with a sensing element input of 5V and 1MHz, the impedance response is 3×10⁻⁶. 5 Ω.

[0072] This enables the sensitive element to respond to both humidity excitation and gap excitation simultaneously, and achieves separation of humidity and gap responses. Specific Implementation Example 3

[0074] A method for separating the impedance of an element in response to humidity and gap, specifically:

[0075] (1) Place the ceramic substrate and the stainless steel mask in deionized water and acetone for ultrasonic cleaning for 10 minutes, and then dry them with nitrogen gas for later use.

[0076] (2) A ceramic substrate with dimensions of 50mm×38.5mm×1mm and a stainless steel mask with outer dimensions of 50mm×38.5mm×0.05mm were simultaneously fixed in the magnetron sputtering working chamber. The target material was ZnO. Radio frequency sputtering was used. The background vacuum was adjusted to 8E-4Pa, the sputtering pressure was 0.5Pa, the power was 50W, and argon gas with a flow rate of 40sccm was introduced. The sample stage rotation speed was 8r / min. A spiral gap single sensitive layer of ZnO material was prepared by magnetron sputtering for 15 minutes.

[0077] (3) The sample prepared in step (2) and a stainless steel mask with an outer size of 50mm×38.5mm×0.05mm are simultaneously fixed in the vacuum coating chamber. A 2nm thick Al2O3 material gap single sensitive insulating layer is prepared by physical vapor deposition. The target material is Al3O2, heated to 200℃, held for 30 minutes, then gasified, and sampled.

[0078] (4) Place the sample prepared in step (3) and a stainless steel mask with an outer size of 50mm×38.5mm×0.05mm in the magnetron sputtering cavity and sputter for 5 minutes to prepare a gap-sensitive electrode layer of ZnO material.

[0079] (5) Then, the sample prepared in step (4) and a stainless steel mask with an outer size of 50mm×38.5mm×0.05mm are placed in the magnetron sputtering cavity and sputtered for 5 minutes to prepare ZnO material and lead layer.

[0080] (6) The sample prepared in step (5) and the mask V with an outer size of 50mm×38.5mm×0.05mm are fixedly placed in the vacuum coating chamber. The target material for evaporation is Al3O2. The sample and the mask are heated to 200℃ and held for 30 minutes. Then gas is added to prepare a 2nm thick Al3O2 material gap humidity dual-sensitive insulating layer and a sample is taken.

[0081] (7) The sample prepared in step (6) is magnetron sputtered for 5 minutes using a stainless steel mask III with outer dimensions of 50mm×38.5mm×0.05mm to prepare a gap humidity dual-sensitive electrode layer.

[0082] (8) The sample prepared in step (7) and the mask with an outer size of 50mm×38.5mm×0.05mm are fixedly placed in the magnetron sputtering working chamber. The target material is ZnO. Radio frequency sputtering is used. The background vacuum is adjusted to 8E-4Pa, the sputtering pressure is 0.5Pa, the power is 50W, and argon gas with a flow rate of 40sccm is introduced. The sample stage speed is 8r / min. The spiral gap humidity-sensitive layer of ZnO material is prepared by magnetron sputtering for 15 minutes.

[0083] (9) Anneal at 500℃ for more than 5 hours.

[0084] This process yielded a sensitive element with a double-layer helical structure, facilitating the separation of humidity and gap responses. When the sensitive element was placed under humidity excitation (75% RH) and a gap excitation (1.5 mm) consisting of a 304# stainless steel metal target, the positive and negative terminals of a TH2822E handheld LCR meter impedance analyzer were connected to the gap humidity dual-sensitive electrode layer and the lead layer, respectively. Under 10MHz, 5V AC excitation, the equivalent impedance value was measured to be 2.3 × 10⁻⁶. 5 Ω.

[0085] The positive and negative terminals of the TH2822E handheld LCR meter impedance analyzer were connected to the gap single-sensitive electrode layer and the lead layer, respectively. Under 10MHz, 5V AC excitation, the equivalent impedance value was measured to be 8×10⁻⁶. 4 Ω.

[0086] Therefore, under dual excitation of humidity and gap, with a 5V, 10MHz input voltage, the impedance response of the sensing element is 2.3 × 10⁻⁶. 5 Ω.

[0087] Under a single humidity excitation (75% RH), with a sensing element input of 5V and 10MHz, the impedance response is 1.5 × 10⁻⁶. 5 Ω.

[0088] Under a single gap excitation (1.5mm), with a sensing element input of 5V and 10MHz, the impedance response is 8×10⁻⁶. 4 Ω.

[0089] This enables the sensitive element to respond to both humidity excitation and gap excitation simultaneously, and achieves separation of humidity and gap responses.

[0090] The embodiments described above are merely illustrative of several implementations of the present invention, and while the descriptions are specific and detailed, they should not be construed as limiting the scope of the present invention. It should be noted that those skilled in the art can make various modifications and improvements without departing from the concept of the present invention, and these modifications and improvements all fall within the scope of protection of the present invention. Therefore, the scope of protection of this patent should be determined by the appended claims.

Claims

1. A method for separating the impedance response of an element to humidity and gap, comprising sequentially depositing a spiral gap single-sensitive layer, a gap single-sensitive insulating layer, a gap single-sensitive electrode layer, a lead layer, a gap humidity dual-sensitive insulating layer, a gap humidity dual-sensitive electrode layer, and a spiral gap humidity dual-sensitive layer on a substrate to obtain a single sensitive element for simultaneously responding to humidity excitation and gap excitation and facilitating response separation; wherein the linewidth, line spacing, and number of turns of the planar spiral structure of the spiral gap single-sensitive layer and the spiral gap humidity dual-sensitive layer are the same; Its features are: The gap single-sensitive insulating layer and the gap humidity dual-sensitive insulating layer are Al2O3 materials with a thickness of 2nm prepared by physical vapor deposition; When the sensitive element is subjected to a gap excitation and an alternating current is applied, the spiral gap single-sensitive layer generates a gap-sensitive effect, producing an induced magnetic field that changes the equivalent impedance between the gap single-sensitive electrode layer and the lead layer, responding to the gap excitation. Simultaneously, the spiral gap humidity dual-sensitive layer also generates a gap-sensitive effect, producing an induced magnetic field that changes the equivalent impedance between the gap humidity dual-sensitive electrode layer and the lead layer, responding to the gap excitation. However, when the sensitive element is subjected to a humidity excitation, the spiral gap single-sensitive layer does not respond to the humidity excitation; only the spiral gap humidity dual-sensitive layer responds to the humidity excitation, adsorbing water molecules and changing its conductivity, thereby changing the equivalent impedance between the gap humidity dual-sensitive electrode layer and the lead layer. When the sensitive element is simultaneously subjected to humidity excitation and gap excitation, the equivalent impedance change between the gap humidity dual-sensitive electrode layer and the lead layer responds to both humidity excitation and gap excitation, while the equivalent impedance change between the gap single-sensitive electrode layer and the lead layer only responds to gap excitation. Therefore, the difference between the equivalent impedance change between the gap humidity dual-sensitive electrode layer and the lead layer and the equivalent impedance change between the gap single-sensitive electrode layer and the lead layer is the impedance response of the sensitive element caused by the single humidity excitation, thereby separating the humidity response and the gap response.

2. The method for separating the impedance of an element in response to humidity and gap as described in claim 1, characterized in that: The substrate layer is made of ceramic; the spiral gap single-sensitive layer and the spiral gap humidity dual-sensitive layer are made of ZnO; the lead layer, the gap single-sensitive electrode layer and the gap humidity dual-sensitive electrode layer are made of ZnO.

3. The method for separating the impedance of an element in response to humidity and gap as described in claim 1, characterized in that: Because it is covered by the single-sensitive insulating layer and the dual-sensitive insulating layer for humidity, the contact between air and water molecules is isolated, and the spiral single-sensitive layer for humidity cannot produce a humidity-sensitive effect.

4. The method for separating the impedance of an element in response to humidity and gap as described in claim 1, characterized in that: The process involves sequentially depositing a spiral gap single-sensitive layer, a gap single-sensitive insulating layer, a gap single-sensitive electrode layer, a lead layer, a gap humidity dual-sensitive insulating layer, a gap humidity dual-sensitive electrode layer, and a spiral gap humidity dual-sensitive layer on a substrate to obtain a single sensitive element that simultaneously responds to humidity excitation and gap excitation and facilitates response separation; specifically: (1) After ultrasonic cleaning of the substrate and stainless steel mask in deionized water and acetone, they are dried with nitrogen gas for later use. (2) Magnetron sputtering of a spiral-gap single-sensor layer; (3) A 2 nm thick Al2O3 material gap single-sensitive insulating layer is prepared on the spiral gap single-sensitive layer by physical vapor deposition; (4) The gap single-sensitive electrode layer is sputtered onto the gap single-sensitive insulating layer by magnetron sputtering; (5) A magnetron sputtering lead layer is deposited on the gap single-sensitive insulating layer and the gap single-sensitive electrode layer; (6) A gap humidity-sensitive insulating layer of Al2O3 material with a thickness of 2 nm was prepared on the lead layer and the gap single-sensitive insulating layer by physical vapor deposition; (7) A gap humidity-sensitive electrode layer is magnetron sputtered onto the gap humidity-sensitive insulating layer; (8) A spiral gap humidity dual-sensitive layer is magnetron sputtered onto the gap humidity dual-sensitive electrode layer and the gap humidity dual-sensitive insulating layer; (9) Anneal the sensitive element prepared in step (8); This allows for the fabrication of a sensitive element with a double-layered helical structure that facilitates the separation of humidity and gap response.

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