Long-life multi-process compatible aqueous stripping solution for TFT-LCD, preparation and application

Abstract

The present invention relates to the field of thin film transistor technology, and in particular to a long-life, multi-process compatible aqueous stripping solution for TFT-LCD, its preparation and application. By improving the formula components and their usage ratios, the traditional hydroxylamine and phenol corrosion inhibitor components are abandoned, and the obtained stripping solution can fully protect the metal from corrosion or oxidation, and achieve compatibility with various processes. Through actual application, it is found that when the stripping solution of the present invention is used to dissolve the photoresist, the mass concentration of the photoresist in the mixed solution after dissolution can reach 5% before replacement, and the performance of the stripping solution is stable, so the service life is significantly extended. The inventor unexpectedly found that the stripping solution formula of the present invention is well compatible with the Cu-ITO process, and by adding a surfactant, there is no stripping solution residue during the cleaning process, which greatly reduces the defective rate of the back-end process. The stripping solution of the present invention is easy to realize large-scale production and preparation, the application process is environmentally friendly, and can be well promoted to industrial production and application processes such as liquid crystal displays and panels.

Description

Technical Field

[0001] The present invention relates to the technical field of thin film transistors, and more particularly to a long-life, multi-process compatible aqueous stripping solution for TFT-LCDs, and the preparation and application thereof. Background Art

[0002] Thin-film transistor (TFT) technology is a large-scale semiconductor integrated circuit technology that utilizes new materials and processes. It involves constructing various extremely fine films on non-single-wafer substrates, such as glass or plastic substrates, through a multi-step process involving sputtering and chemical deposition. The integrated circuits are then fabricated using film processing techniques such as etching and stripping, along with metal wiring. TFT processing techniques are highly tolerant of variations in metal wiring dimensions and side-wall trenching. Wet etching, with its high etching rate, low cost, and ease of use, is a commonly used processing technique for TFTs.

[0003] With the continuous development of market demand and industry technology, the research and development and production of thin-film transistors (TFTs) with multiple thin-film transistor (TFT) processes are gaining increasing attention and importance. Existing etchants for TFTs are mostly targeted at a single process, such as aluminum or copper, and are gradually failing to meet the demands of market and technological development. Therefore, the development of a water-based stripping solution that is compatible with multiple processes for manufacturing multi-film thin-film transistors, with a long lifespan and excellent compatibility is imperative. Summary of the Invention

[0004] To this end, it is necessary to provide a long-life multi-process compatible aqueous stripping solution for TFT-LCD and its preparation and application, so as to solve the urgent problem of the lack of multi-process aqueous stripping solution suitable for the multi-process research and development and production needs of thin film transistors containing multiple thin film transistors on the market, as well as the negative impact and low production efficiency caused by the process and cross-use of multiple single-process stripping solutions.

[0005] To achieve the above objectives, in a first aspect, the present invention provides a long-life, multi-process compatible aqueous stripping solution for TFT-LCD, comprising, by weight percentage:

[0006] Amines 5%-15%;

[0007] Polar solvent 60%-80%;

[0008] Corrosion inhibitor 0.05%-0.3%;

[0009] 0.05%-0.3% surfactant, wherein the surfactant is selected from triethylene glycol or polyethylene glycol;

[0010] Chelating agent 0.05%-0.3%;

[0011] The balance is deionized water.

[0012] As a preferred embodiment of the present invention, the amine is selected from at least one of N-methylethanolamine, N-methyldiethanolamine, N,N-dimethylpropionamide, diglycolamine, AMP-95 and monoethanolamine.

[0013] As a preferred embodiment of the present invention, the polar solvent is at least one selected from diethylene glycol butyl ether, diethylene glycol methyl ether, ethylene glycol ethyl ether and propylene glycol monomethyl ether.

[0014] As a preferred embodiment of the present invention, the corrosion inhibitor is selected from at least one of ammonium molybdate, uracil, methyl-phenyltriazole, adipic acid, creatinine and sorbitol.

[0015] As a preferred embodiment of the present invention, the chelating agent is selected from ethylenediaminetetramethylenephosphonic acid or phosphine carboxylic acid.

[0016] In a second aspect, the inventors provide a method for preparing a long-life, multi-process compatible aqueous stripping solution for TFT-LCD, comprising the following steps:

[0017] In terms of weight percentage, 0.05%-0.3% of a corrosion inhibitor is added to a container containing deionized water, and after mixing evenly, 0.05%-0.3% of a chelating agent is added. After mixing evenly again, 5%-15% of an amine, 60%-80% of a polar solvent, and 0.05%-0.3% of a surfactant are added in sequence, wherein the surfactant is selected from triethylene glycol or polyethylene glycol, and the temperature is maintained at 20°C-25°C.

[0018] As a preferred embodiment of the present invention, the chelating agent is selected from ethylenediaminetetramethylenephosphonic acid or phosphine carboxylic acid.

[0019] In a preferred embodiment of the present invention, the amine is selected from at least one of N-methylethanolamine, N-methyldiethanolamine, N,N-dimethylpropionamide, diglycolamine, AMP-95, and monoethanolamine. Selecting an alcoholamine rather than hydroxylamine allows for efficient and thorough penetration and decomposition of the photoresist while protecting the metal from oxidation and corrosion.

[0020] As a preferred embodiment of the present invention, the polar solvent is at least one selected from diethylene glycol butyl ether, diethylene glycol methyl ether, ethylene glycol ethyl ether and propylene glycol monomethyl ether.

[0021] As a preferred embodiment of the present invention, the corrosion inhibitor is selected from at least one of ammonium molybdate, uracil, methyl-phenyltriazole, adipic acid, creatinine and sorbitol.

[0022] In a third aspect, the inventor provides an application of a long-life, multi-process compatible aqueous stripping liquid for TFT-LCD, wherein the long-life, multi-process compatible aqueous stripping liquid for TFT-LCD is the stripping liquid described in the first aspect of the present invention.

[0023] As a further preferred embodiment of the present invention, the above application is directed to a TFT-LCD multi-process manufacturing technology including a Cu-ITO process.

[0024] Different from the prior art, the formula components and usage ratios of the long-life, multi-process compatible aqueous stripping solution provided by the above technical solution abandon the traditional hydroxylamine and phenol corrosion inhibitor components. The resulting stripping solution can fully protect the metal from corrosion or oxidation and achieve compatibility with various processes. At the same time, through actual application, it was found that when the stripping solution of the present invention is used to dissolve the photoresist, the mass concentration of the photoresist in the mixed solution after dissolution can reach 5% before replacement, and the performance of the stripping solution is stable, so the service life is significantly extended. Furthermore, the inventor unexpectedly found that the stripping solution formula of the present invention is well compatible with the Cu-ITO process, and the addition of surfactants means that no stripping solution residues are left during the cleaning process, which greatly reduces the defective rate of the back-end process. The preparation method of the stripping solution of the present invention is simple, the required equipment is conventional, the preparation conditions are mild, and it is easy to achieve large-scale production and preparation. The application process of the stripping solution of the present invention is environmentally friendly and can be well promoted to industrial production applications such as liquid crystal displays and panels that are compatible with multiple processes.

[0025] The above-mentioned records related to the content of the invention are only an overview of the technical solution of this application. In order to enable ordinary technicians in this field to understand the technical solution of this application more clearly, and then implement it according to the text of the specification and the contents recorded in the drawings, and to make the above-mentioned purposes and other purposes, features and advantages of this application easier to understand, the following is an explanation in combination with the specific implementation methods and drawings of this application. BRIEF DESCRIPTION OF THE DRAWINGS

[0026] Figure 1 The volatility test results of the three components of the stripping solution in specific embodiment 7 of the present invention over time are shown;

[0027] Figure 2 SEM images of glass substrates containing different film materials before being stripped using the stripping solution in specific embodiment 7 of the present invention;

[0028] Figure 3 SEM images of glass substrates containing different film materials after being stripped using the stripping solution in specific embodiment 7 of the present invention;

[0029] Figure 4 SEM images of glass substrates containing different film materials before being etched by the stripping solution in specific embodiment 7 of the present invention;

[0030] Figure 5 These are SEM images of glass substrates containing different film materials after being etched using the stripping solution in specific embodiment 7 of the present invention. DETAILED DESCRIPTION

[0031] In order to explain the technical content, structural features, achieved objectives and effects of the technical solution in detail, the following is a detailed description in conjunction with specific embodiments and accompanying drawings.

[0032] References to "embodiments" herein mean that the specific features, structures, or characteristics described in conjunction with the embodiments may be included in at least one embodiment of the present application. The appearance of the word "embodiment" in various places in the specification does not necessarily refer to the same embodiment, nor does it particularly limit its independence or relevance to other embodiments. In principle, in this application, as long as there are no technical contradictions or conflicts, the various technical features mentioned in the embodiments can be combined in any manner to form a corresponding implementable technical solution.

[0033] Unless otherwise defined, the technical terms used herein have the same meanings as those generally understood by those skilled in the art to which this application belongs; the use of relevant terms herein is only for describing specific embodiments and is not intended to limit this application.

[0034] In the description of this application, the term "and / or" is used to describe a logical relationship between objects, indicating that three relationships can exist. For example, A and / or B means: A exists, B exists, and both A and B exist. In addition, the character " / " in this document generally indicates that the objects before and after are in a logical "or" relationship.

[0035] In this application, terms such as "first" and "second" are merely used to distinguish one entity or operation from another entity or operation, and do not necessarily require or imply any actual quantity, priority or sequence relationship between these entities or operations.

[0036] Without further limitations, in this application, the words "include", "comprise", "have" or other similar expressions used in the sentences are intended to cover non-exclusive inclusion. These expressions do not exclude the presence of additional elements in the process, method or product including the elements, so that the process, method or product including a series of elements may include not only those defined elements, but also other elements not explicitly listed, or elements inherent to such process, method or product.

[0037] Consistent with the understanding in the Examination Guidelines, in this application, expressions such as "greater than," "less than," and "exceed" are understood to exclude the number itself; expressions such as "above," "below," and "within" are understood to include the number itself. Furthermore, in the description of the embodiments of this application, "multiple" means more than two (including two), and similar expressions related to "multiple" are also understood in this manner, such as "multiple groups," "multiple times," etc., unless otherwise specifically defined.

[0038] In the description of the embodiments of the present application, the space-related expressions used, such as "center", "longitudinal", "lateral", "length", "width", "thickness", "up", "down", "front", "back", "left", "right", "vertical", "horizontal", "vertical", "top", "bottom", "inside", "outside", "clockwise", "counterclockwise", "axial", "radial", "circumferential", etc., indicate the orientation or position relationship based on the orientation or position relationship shown in the specific embodiments or drawings, and are only for the convenience of describing the specific embodiments of the present application or facilitating the reader's understanding, and do not indicate or imply that the device or component referred to must have a specific position, a specific orientation, or be constructed or operated in a specific orientation. Therefore, it should not be understood as a limitation on the embodiments of the present application.

[0039] Unless otherwise expressly specified or limited, in the description of the embodiments of the present application, the terms "installed", "connected", "connected", "fixed", "set", etc. used should be understood in a broad sense. For example, the "connection" can be a fixed connection, a detachable connection, or an integrated setting; it can be a mechanical connection, an electrical connection, or a communication connection; it can be a direct connection or an indirect connection through an intermediate medium; it can be the internal connection of two elements or the interaction relationship between two elements. For those skilled in the art of the present application, the specific meanings of the above terms in the embodiments of the present application can be understood according to the specific circumstances.

[0040] Thin Film Transistor-Liquid Crystal Display (TFT-LCD) is a finely processed product that combines microelectronics technology with liquid crystal display technology. It has the advantages of high responsiveness, high brightness, and high contrast. It is widely used in mainstream display devices such as various computers, televisions, mobile phones, monitors, and desktops.

[0041] As the critical dimensions of thin-film transistors continue to decrease, wet etching processes, due to their isotropic etching characteristics, are increasingly unable to meet demand. Consequently, dry etching processes have emerged. While the dry etching process provides anisotropic etching to form metal lines and vias, its ion beam bombards the photoresist and non-dielectric materials such as aluminum-silicon-copper, aluminum-copper, and oxides, forming highly cross-linked photoresist residues on the surface. At the same time, the sidewalls are enriched with metal materials due to the backsplash effect of argon bombardment. The dry ashing process results in residues containing organic and inorganic oxides and their metal compounds. This requires that the photoresist stripping solution must be capable of removing both organic and inorganic residues, as well as metal cross-linked residues.

[0042] The processing of thin-film transistor (TFT) arrays on glass substrates involves multiple processes. Generally speaking, a complete thin-film transistor requires at least five processes, and photoresist stripping solution is one of the key chemicals in these processes. The main function of photoresist stripping solution is to remove photoresist residues generated during the TFT-LCD manufacturing process. In the prior art, each process requires the use of a corresponding stripping solution, but the stripping solutions required for different processes are often not compatible with each other. In fact, the stripping solution used in the previous process can even have a negative impact on the stripping solution used in the subsequent process. In addition, the different stripping solutions used in multiple processes may also increase the stripping solution residue during the cleaning process. Therefore, it is imperative to develop a stripping solution that is highly compatible with multiple processes in the TFT panel manufacturing process to meet the etching requirements of different thin film materials and to take into account the stripping solution's protection of the metal from corrosion and oxidation damage.

[0043] Through long-term practice, the inventors discovered that the organic amine component in traditional organic solvent-based photoresist stripping solutions provides a certain degree of photoresist backbone polymer breakdown. Organic solvents such as NMP (N-methylpyrrolidone) and DMSO (dimethyl sulfoxide) dissolve organic residues and remove photoresist based on the principle of like dissolves like. However, these stripping solutions can also corrode metal conductors. Therefore, in the search for a stripping solution compatible with multiple processes, protecting metal conductors from corrosion and oxidation became another important technical goal. The applicants also considered the stripping solution's quality, effective lifespan, corrosiveness, environmental friendliness, and process compatibility.

[0044] In this application, a long-life, multi-process compatible aqueous stripping solution for TFT-LCDs comprises, by weight percentage, 5%-15% amine, 60%-80% polar solvent, 0.05%-0.3% corrosion inhibitor, 0.05%-0.3% surfactant, 0.05%-0.3% chelating agent, and the balance deionized water, wherein the surfactant is selected from triethylene glycol or polyethylene glycol. On the one hand, the amine, through its nucleophilic action, effectively dissolves the photoresist backbone polymer and some organic and inorganic oxides and metal compounds in the photoresist residues from various processes. On the other hand, the use of the surfactant in the stripping solution eliminates stripping solution residue during subsequent cleaning, significantly reducing the defect rate of subsequent processes. Furthermore, the use of the surfactant significantly enhances the stability and service life of the stripping solution.

[0045] In some embodiments of the present application, the amine is selected from at least one of N-methylethanolamine, N-methyldiethanolamine, N,N-dimethylpropionamide, diglycolamine, AMP-95, and monoethanolamine. Thus, the photoresist backbone polymer can be solubilized in a polar solvent through electrostatic interactions and hydrogen bonding.

[0046] In some embodiments of the present application, the polar solvent is selected from at least one of diethylene glycol butyl ether, diethylene glycol methyl ether, ethylene glycol ethyl ether, and propylene glycol monomethyl ether. In this way, the stripping solution can dissolve various organic residues, inorganic residues, and metal cross-linking residues.

[0047] In some embodiments of the present application, the corrosion inhibitor is selected from at least one of ammonium molybdate, uracil, methyl-phenyltriazole, adipic acid, creatinine, and sorbitol. This allows the stripping solution's dissolution rate to be fine-tuned by adjusting its surface tension and wettability, effectively protecting the metal surface while the stripping solution is active.

[0048] In some embodiments of the present application, the chelating agent is selected from ethylenediaminetetramethylenephosphonic acid (EDTMA) or phosphonate. These chelating agents are suitable for use with a variety of metal materials. They not only exhibit excellent compatibility with other components in the stripping solution, preventing precipitation and stratification, but also form stable complexes with metal ions, effectively preventing corrosion and contamination of the metal surface. Furthermore, the chelating agent can form a protective film on the metal surface, preventing the release of metal ions into the stripping solution, thereby effectively preventing corrosion of the metal material.

[0049] The second aspect of the present application provides a method for preparing a long-life, multi-process compatible aqueous stripping solution for TFT-LCD, comprising the following steps: adding 0.05%-0.3% of a corrosion inhibitor by weight into a container containing deionized water, mixing evenly, adding 0.05%-0.3% of a chelating agent, mixing evenly again, and adding 5%-15% of an amine, 60%-80% of a polar solvent, and 0.05%-0.3% of a surfactant in sequence, wherein the surfactant is selected from triethylene glycol or polyethylene glycol, and the temperature is maintained at 20°C-25°C.

[0050] The third aspect of the present application provides an application of a long-life, multi-process compatible aqueous stripping solution for TFT-LCD. It should be noted that "multi-process" in this application refers to the multi-process of preparing a thin film transistor array (Array) in the production process of a thin film transistor liquid crystal display. Generally speaking, a complete thin film transistor requires at least five processes to complete the stacking of insulating dielectric films such as SiO2 and SiN and metal conductive films such as Al and Cu. Based on the special composition and ratio of the stripping solution of this application, the stripping solution provided in this application is well compatible with the aluminum process and copper process in the TFT-LCD preparation process, especially with the Cu-ITO process.

[0051] Example 1

[0052] A long-life, multi-process compatible aqueous stripping solution for TFT-LCDs comprises, by weight percentage, 15% of an amine monoethanolamine, 60% of a polar solvent diethylene glycol butyl ether, 0.1% of a corrosion inhibitor uracil, 0.1% of a surfactant polyethylene glycol, 0.1% of a chelating agent phosphine carboxylic acid, and the balance deionized water.

[0053] The preparation process of the above components is as follows:

[0054] 1. Add solvent water into the stirring container, start stirring, and control the temperature at 20-25℃;

[0055] 2. Slowly add the corrosion inhibitor uracil along the inner wall of the stirring container, and start the next step after stirring and dissolving completely;

[0056] 3. Slowly add the chelating agent phosphine carboxylic acid along the inner wall of the stirring container, and start the next step after stirring and dissolving completely;

[0057] 4. Slowly add monoethanolamine along the inner wall of the stirring container;

[0058] 5. Slowly add the polar solvent diethylene glycol butyl ether along the inner wall of the stirring container;

[0059] 6. Slowly add the surfactant polyethylene glycol along the inner wall of the stirring container and stir thoroughly to obtain the long-life multi-process compatible aqueous stripping liquid for TFT-LCD of the present application.

[0060] Example 2

[0061] A long-life, multi-process compatible aqueous stripping solution for TFT-LCDs comprises, by weight percentage, 15% of an amine monoethanolamine, 60% of a polar solvent diethylene glycol butyl ether, 0.1% of a corrosion inhibitor ammonium molybdate, 0.1% of a surfactant polyethylene glycol, 0.1% of a chelating agent phosphine carboxylic acid, and the balance deionized water.

[0062] The preparation process of the above components is as follows:

[0063] 1. Add solvent water into the stirring container, start stirring, and control the temperature at 20-25℃;

[0064] 2. Slowly add the corrosion inhibitor ammonium molybdate along the inner wall of the stirring container, and start the next step after stirring and dissolving completely;

[0065] 3. Slowly add the chelating agent phosphine carboxylic acid along the inner wall of the stirring container, and start the next step after stirring and dissolving completely;

[0066] 4. Slowly add monoethanolamine along the inner wall of the stirring container;

[0067] 5. Slowly add the polar solvent diethylene glycol butyl ether along the inner wall of the stirring container;

[0068] 6. Slowly add the surfactant polyethylene glycol along the inner wall of the stirring container and stir thoroughly to obtain the long-life multi-process compatible aqueous stripping liquid for TFT-LCD of the present application.

[0069] Example 3

[0070] A long-life, multi-process compatible aqueous stripping solution for TFT-LCDs comprises, by weight percentage, 15% of the amine monoethanolamine, 60% of the polar solvent diethylene glycol butyl ether, 0.1% of the corrosion inhibitors uracil and 0.03% of ammonium molybdate, 0.1% of the surfactant polyethylene glycol and 0.1% of the chelating agent phosphine carboxylic acid, and the balance deionized water.

[0071] The above components are prepared into a long-life multi-process compatible aqueous stripping liquid for TFT-LCD in the same manner as in Example 1-2.

[0072] Example 4

[0073] A long-life, multi-process compatible aqueous stripping solution for TFT-LCDs comprises, by weight percentage, 15% of the amine monoethanolamine, 60% of the polar solvent diethylene glycol methyl ether, 0.1% of the corrosion inhibitors uracil and 0.03% of ammonium molybdate, 0.1% of the surfactant polyethylene glycol and 0.1% of the chelating agent phosphine carboxylic acid, and the balance deionized water.

[0074] The above components are prepared into a long-life multi-process compatible aqueous stripping liquid for TFT-LCD in the same manner as in Example 1-2.

[0075] Example 5

[0076] A long-life, multi-process compatible aqueous stripping solution for TFT-LCDs comprises, by weight percentage, 15% of the amine N,N-dimethylpropionamide, 60% of the polar solvent diethylene glycol butyl ether, 0.1% of the corrosion inhibitors uracil and 0.03% of ammonium molybdate, 0.1% of the surfactant polyethylene glycol and 0.1% of the chelating agent phosphine carboxylic acid, and the balance deionized water.

[0077] The above components are prepared into a long-life multi-process compatible aqueous stripping liquid for TFT-LCD in the same manner as in Example 1-2.

[0078] Example 6

[0079] A long-life, multi-process compatible aqueous stripping solution for TFT-LCDs comprises, by weight percentage, 15% of the amine N,N-dimethylpropionamide, 60% of the polar solvent diethylene glycol methyl ether, 0.1% of the corrosion inhibitors uracil and 0.03% of ammonium molybdate, 0.1% of the surfactant polyethylene glycol and 0.1% of the chelating agent phosphine carboxylic acid, and the balance deionized water.

[0080] The above components are prepared into a long-life multi-process compatible aqueous stripping liquid for TFT-LCD in the same manner as in Example 1-2.

[0081] Example 7

[0082] A long-life, multi-process compatible aqueous stripping solution for TFT-LCDs comprises, by weight percentage, 10% of the amine N,N-dimethylpropionamide, 68% of the polar solvent diethylene glycol butyl ether, 0.1% of the corrosion inhibitors uracil and 0.03% of ammonium molybdate, 0.1% of the surfactant polyethylene glycol and 0.1% of the chelating agent phosphine carboxylic acid, and the balance deionized water.

[0083] The above components are prepared into a long-life multi-process compatible aqueous stripping liquid for TFT-LCD in the same manner as in Example 1-2.

[0084] Example 8

[0085] A long-life, multi-process compatible aqueous stripping solution for TFT-LCDs comprises, by weight percentage, 5% of the amine N,N-dimethylpropionamide, 80% of the polar solvent diethylene glycol butyl ether, 0.2% of the corrosion inhibitors uracil and 0.03% of ammonium molybdate, 0.1% of the surfactant polyethylene glycol and 0.1% of the chelating agent phosphine carboxylic acid, and the balance deionized water.

[0086] The above components are prepared into a long-life multi-process compatible aqueous stripping liquid for TFT-LCD in the same manner as in Example 1-2.

[0087] Example 9

[0088] A long-life, multi-process compatible aqueous stripping solution for TFT-LCDs comprises, by weight percentage, 10% of an amine AMP-95, 68% of a polar solvent, diethylene glycol butyl ether, 0.1% of corrosion inhibitors uracil and 0.03% of ammonium molybdate, 0.1% of a surfactant, polyethylene glycol, and 0.1% of a chelating agent, phosphine carboxylic acid, with the balance being deionized water.

[0089] The above components are prepared into a long-life multi-process compatible aqueous stripping liquid for TFT-LCD in the same manner as in Example 1-2.

[0090] Example 10

[0091] A long-life, multi-process compatible aqueous stripping solution for TFT-LCDs comprises, by weight percentage, 10% of the amine N,N-dimethylpropionamide, 68% of the polar solvent diethylene glycol butyl ether, 0.1% of the corrosion inhibitors uracil and 0.03% of ammonium molybdate, 0.1% of the surfactant triethylene glycol and 0.1% of the chelating agent phosphine carboxylic acid, and the balance deionized water.

[0092] The above components are prepared into a long-life multi-process compatible aqueous stripping liquid for TFT-LCD in the same manner as in Example 1-2.

[0093] Example 11

[0094] A long-life, multi-process compatible aqueous stripping solution for TFT-LCDs comprises, by weight percentage, 10% of the amine N,N-dimethylpropionamide, 68% of the polar solvent diethylene glycol butyl ether, 0.05% of the corrosion inhibitor uracil, 0.05% of the surfactant polyethylene glycol, 0.05% of the chelating agent phosphine carboxylic acid, and the balance deionized water.

[0095] The above components are prepared into a long-life multi-process compatible aqueous stripping liquid for TFT-LCD in the same manner as in Example 1-2.

[0096] Example 12

[0097] A long-life, multi-process compatible aqueous stripping solution for TFT-LCDs comprises, by weight percentage, 10% of the amine N,N-dimethylpropionamide, 68% of the polar solvent diethylene glycol butyl ether, 0.05% of the corrosion inhibitors uracil and 0.25% of ammonium molybdate, 0.3% of the surfactant polyethylene glycol and 0.3% of the chelating agent phosphine carboxylic acid, and the balance deionized water.

[0098] The above components are prepared into a long-life multi-process compatible aqueous stripping liquid for TFT-LCD in the same manner as in Example 1-2.

[0099] The test equipment and related information involved in this application include:

[0100] Titrator: A potentiometric titrator commonly used in the fine chemical industry, a commercially available product.

[0101] Gas chromatograph: Agilent 7890B.

[0102] SEM (scanning electron microscope) instrument: the SEM instrument commonly used in the fine chemical industry can be used.

[0103] OM (optical microscope): The OM instrument commonly used in the fine chemical industry can be used.

[0104] Viscometer: BS / U / M mini viscometer was from Sigma-Aldrich.

[0105] Unless otherwise specified, the test reagents used in this application were purchased from the market.

[0106] The kinematic viscosity test method of the stripping liquid in this application refers to the specified operation of Chapter 9 "Determination of kinematic viscosity of transparent liquids" of GB / T30515-2014.

[0107] The specific operating steps of the stripping performance test method of the stripping liquid in this application are as follows:

[0108] Glass substrates with photoresist and sputtered films of varying composition and thickness were immersed in a stripping solution at 50°C for stripping, with gentle agitation during the stripping process. The glass substrates were 30 mm x 30 mm in size, and the test lasted 120 seconds. After stripping, the glass substrates were rinsed with ultrapure water (DIW) and dried with high-purity nitrogen. The remaining photoresist after stripping was observed using optical microscope (OM).

[0109] The specific operating steps of the corrosiveness test method of the stripping fluid in this application are as follows:

[0110] Experimental glass substrates with photoresist and sputtered films of varying compositions and thicknesses were immersed in a stripping solution at 50°C for 120 seconds. After stripping, the glass substrates were rinsed with ultrapure water (DIW) and then dried with high-purity nitrogen. SEM images were used to observe the corrosion of the metal layer of the glass substrates by the stripping solution.

[0111] The stripping solutions provided in Examples 1-12 were tested for kinematic viscosity according to the above test method, and the stripping solution provided in Example 7 was tested for volatility (stability in use), stripping performance, and corrosion performance. The test results are shown in Table 1 and Table 2. Figure 1-5 shown.

[0112] Table 1 Test results of kinematic viscosity of stripping liquids of Examples 1-12, unit: mm 2 / s

[0113]

[0114]

[0115] from Figure 1 As shown in the data graph of the change in mass percentage of amine, water and ether in the stripping solution provided in Example 7 over time, it can be seen that the ether and water content of the stripping solution decreases within the first 12 hours, and then the change range remains small until the 60th hour, indicating that the stripping solution of this example is highly stable and has a relatively long life.

[0116] from Figure 2 、 3 As shown in the comparison diagram before and after the stripping treatment of different films using the stripping solution provided in Example 7, it can be seen that the stripping solution provided in Example 7 has an excellent stripping effect, and the same stripping solution is suitable for a variety of different thin film transistor processes, indicating that the stripping solution is highly compatible in the processing of thin film transistor arrays of TFT-LCDs.

[0117] from Figure 4 、 5 As shown in the comparison diagram before and after the corrosion treatment of different films using the stripping solution provided in Example 7, it can be seen that the stripping solution provided in Example 7 has excellent corrosion effect. Under this composition and ratio, N,N-dimethylpropionamide will produce a large amount of OH-, and OH- will have a corrosive effect in aqueous solvents. By adding different additives, a good anti-corrosion effect is achieved for the metal connecting wires.

[0118] In addition, when the stripping solution of Example 7 is applied to the multi-process TFT-LCD thin film transistor array processing, the mass concentration of the photoresist in the mixed solution after dissolution can reach 5% before replacement.

[0119] In summary, it can be seen that the stripping solution provided by the present invention is compatible with various processes of TFT-LCD thin-film transistors, and has strong stability, mild application conditions, and simple operation steps. It is very suitable for wide promotion and application in the array processing of multi-process TFT-LCD thin-film transistors.

[0120] It should be noted that although the above embodiments have been described herein, this does not limit the scope of patent protection of the present invention. Therefore, based on the innovative concept of the present invention, changes and modifications to the embodiments described herein, or equivalent structural or equivalent process transformations made using the contents of the present invention's specification and drawings, and direct or indirect application of the above technical solutions to other related technical fields, are all included in the scope of patent protection of the present invention.

Claims

1. A long-life, multi-process compatible aqueous stripping solution for TFT-LCD, characterized in that: In percentage by weight, it includes: Amines 5%-15%; Polar solvent 60%-80%; 0.05%-0.3% corrosion inhibitor, wherein the corrosion inhibitor is selected from at least one of ammonium molybdate, uracil, methyl-phenyltriazole, and creatinine; 0.05%-0.3% surfactant, wherein the surfactant is triethylene glycol; 0.05%-0.3% of a chelating agent, wherein the chelating agent is a phosphine carboxylic acid; The balance is deionized water.

2. The long-life, multi-process compatible aqueous stripping solution for TFT-LCD according to claim 1, characterized in that: The amine is selected from at least one of N-methylethanolamine, N-methyldiethanolamine, N,N-dimethylpropionamide, diglycolamine, AMP-95 and monoethanolamine.

3. The long-life, multi-process compatible aqueous stripping solution for TFT-LCD according to claim 1, characterized in that: The polar solvent is selected from at least one of diethylene glycol butyl ether, diethylene glycol methyl ether, ethylene glycol ethyl ether and propylene glycol monomethyl ether.

4. The long-life, multi-process compatible aqueous stripping solution for TFT-LCD according to claim 1, characterized in that: The multiple processes include a Cu-ITO process.

5. A method for preparing a long-life, multi-process compatible aqueous stripping solution for TFT-LCD, characterized in that: The following steps are involved: In terms of weight percentage, 0.05%-0.3% of a corrosion inhibitor is added to a container containing deionized water, and after mixing evenly, 0.05%-0.3% of a chelating agent is added. After mixing evenly again, 5%-15% of an amine, 60%-80% of a polar solvent, and 0.05%-0.3% of a surfactant are added in sequence, wherein the corrosion inhibitor is selected from at least one of ammonium molybdate, uracil, methyl-phenyltriazole, and creatinine, the surfactant is triethylene glycol, and the chelating agent is phosphine carboxylic acid. The temperature is maintained at 20°C-25°C.

6. The preparation method according to claim 5, characterized in that The amine is selected from at least one of N-methylethanolamine, N-methyldiethanolamine, N,N-dimethylpropionamide, diglycolamine, AMP-95 and monoethanolamine.

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