Room Temperature Hydrogen Sensor with Pd-based In2Se3 Sensing Layer and its Fabrication Method

By modifying the surface of the In2Se3 sensing layer with Pd metal and utilizing the catalytic overflow effect of Pd, the Pd-based In2Se3 sensing layer was able to achieve efficient detection of hydrogen at room temperature. This solved the problem of poor sensitivity and recovery characteristics of existing two-dimensional material hydrogen sensors and enabled hydrogen detection with a low detection limit.

CN117517405BActive Publication Date: 2026-06-02QINGDAO UNIV
View PDF 0 Cites 0 Cited by

Patent Information

Authority / Receiving Office
CN · China
Patent Type
Patents(China)
Current Assignee / Owner
QINGDAO UNIV
Filing Date
2023-11-08
Publication Date
2026-06-02

AI Technical Summary

Technical Problem

Existing two-dimensional hydrogen sensors have low gas response intensity and sensitivity, high detection limit, and poor recovery characteristics because the sensitive layer surface lacks dangling bonds, resulting in weak interaction between the gas and the material. They cannot efficiently detect hydrogen at room temperature.

Method used

By modifying the surface of the In2Se3 sensing layer with Pd metal, the catalytic overflow effect of Pd is utilized to capture and release hydrogen through the Pd-based In2Se3 sensing layer, and gas detection is achieved by using the resistance change of the In2Se3 material.

Benefits of technology

The sensitivity and selectivity of the hydrogen sensor have been improved, and the detection limit has been reduced to 50 ppb. It can effectively detect hydrogen at room temperature and has the advantages of simple operation, high safety and portability.

✦ Generated by Eureka AI based on patent content.

Smart Images

  • Figure CN117517405B_ABST
    Figure CN117517405B_ABST
Patent Text Reader

Abstract

The application discloses a room-temperature hydrogen sensor with a Pd-based In2Se3 sensing layer and a preparation method, and belongs to the technical field of room-temperature hydrogen sensors.The technical scheme is as follows: an In2Se3 sensing layer is prepared, an interdigital electrode is prepared, a room-temperature hydrogen sensor device with an In2Se3 sensing layer is prepared, a room-temperature hydrogen sensor device with a Pd-based In2Se3 sensing layer is prepared, and a room-temperature hydrogen sensor integrated with a Pd-based In2Se3 sensing layer is prepared.The Pd metal is modified on the surface of the In2Se3 material, active sites are increased, the selectivity of the In2Se3 material is changed, the sensitivity is improved, and the room-temperature hydrogen sensor exhibits good selectivity to hydrogen.
Need to check novelty before this filing date? Find Prior Art