Electronic component housing package and electronic device

Abstract

A coaxial line has a center conductor that is long on one side, an outer conductor, and a dielectric between the center conductor and the outer conductor. The dielectric has a first end surface toward the transmission line on one side. A wall body has an opening portion that opens to the first end surface. The opening portion includes a ring-shaped space that is continuous with the first end surface. An outer diameter of the ring-shaped space is larger than an outer diameter of a space in the opening portion on the side opposite the first end surface. The center conductor includes a first section that has a first thickness and at least a portion of which protrudes from the first end surface, and a second section that has a second thickness smaller than the first thickness and is located inside the dielectric. In a longitudinal direction of the center conductor, an end on a side opposite the protruding side of the first section is located between the first end surface and a specific position inside the dielectric. The specific position is a position that is separated from the first end surface toward the inside of the dielectric by 1 / 8 of an effective wavelength of a transmission signal.

Description

Technical Field

[0001] This disclosure relates to packages for storing electronic components and electronic devices. Background Technology

[0002] Japanese Patent Application Publication No. 2003-100927 discloses a package for housing semiconductor components, comprising: a coaxial connector located in a housing; and a circuit board located on the side of the housing. The circuit board has transmission lines, and the center conductor of the coaxial connector is connected to the signal conductor of the transmission lines. Summary of the Invention

[0003] Methods for solving problems

[0004] The electronic component housing package disclosed herein comprises: a substrate having a wall; a coaxial line located in the wall; and a transmission line connected to the coaxial line on the side of the wall. The coaxial line has: a center conductor that is longer on one side; an outer peripheral conductor; and a dielectric material located between the center conductor and the outer peripheral conductor. The dielectric material has a first end face facing the transmission line. The wall has an opening leading to the first end face, the opening including an annular space connected to the first end face, the outer diameter of which is... The center conductor has an outer diameter larger than that of the space located on the opposite side of the first end face in the opening. The center conductor includes: a first section having a first thickness and at least a portion protruding from the first end face; and a second section having a second thickness smaller than the first thickness and located within the dielectric. In the long side direction of the center conductor, the end of the first section on the opposite protruding side is located between the first end face and a specific position within the dielectric, the specific position being a position 1 / 8 of the effective wavelength of the transmitted signal away from the first end face inwards from the dielectric.

[0005] The electronic device disclosed herein includes: the aforementioned package for storing electronic components; and electronic components stored in the package for storing electronic components. Attached Figure Description

[0006] Figure 1A This is a cross-sectional view showing the electronic component housing package and electronic device according to the embodiments of this disclosure.

[0007] Figure 1B This is a top view showing the electronic component housing package and electronic device according to the embodiments of this disclosure.

[0008] Figure 2 It means Figure 1A or Figure 1B A three-dimensional cross-sectional view of the periphery of the connection between the coaxial line and the transmission line.

[0009] Figure 3A It means Figure 1A or Figure 1B A cross-sectional view of the periphery of the connection between the coaxial line and the transmission line.

[0010] Figure 3B It means Figure 3A A diagram of the central conductor.

[0011] Figure 4A This is a graph showing the frequency characteristics of the reflection coefficients of Embodiment 1 and Comparative Examples 1 and 2.

[0012] Figure 4B This is a graph showing the frequency characteristics of the transmission coefficients of Embodiment 1 and Comparative Examples 1 and 2.

[0013] Figure 5A This is a graph showing the frequency characteristics of the reflection coefficients of Embodiments 1, 2 and Comparative Example 1.

[0014] Figure 5B This is a graph showing the frequency characteristics of the transmission coefficients of Embodiments 1, 2 and Comparative Example 1.

[0015] Figure 6A It is a graph showing the frequency characteristics of the reflection coefficients of Embodiments 1, 3 and Comparative Examples 3, 4.

[0016] Figure 6B This is a graph showing the frequency characteristics of the transmission coefficients of Embodiments 1, 3, and Comparative Examples 3 and 4.

[0017] Figure 7A It is a graph showing the frequency characteristics of the reflection coefficients in embodiments 1, 3-5.

[0018] Figure 7B It is a graph showing the frequency characteristics of the transmission coefficient in embodiments 1, 3-5.

[0019] Figure 8A It is a graph showing the frequency characteristics of the reflection coefficients of Embodiments 2, 10 and Comparative Examples 5, 7.

[0020] Figure 8B This is a graph showing the frequency characteristics of the transmission coefficients of Embodiments 2, 10 and Comparative Examples 5, 7.

[0021] Figure 9A It is a graph showing the frequency characteristics of the reflection coefficients in embodiments 2, 6, 7, and 11.

[0022] Figure 9B It is a graph showing the frequency characteristics of the transmission coefficients in embodiments 2, 6, 7, and 11.

[0023] Figure 10A This is a cross-sectional view of the coaxial lines and transmission lines of an electronic component housing package according to a modified embodiment of the present disclosure.

[0024] Figure 10B This is a diagram showing the center conductor of an electronic component housing package according to a modified embodiment of the present disclosure.

[0025] Figure 11A It is a graph showing the frequency characteristics of the reflection coefficients in embodiments 3, 8, and 9.

[0026] Figure 11B It is a graph showing the frequency characteristics of the transmission coefficient in embodiments 3, 8, and 9. Detailed Implementation

[0027] Hereinafter, embodiments of the present disclosure will be described in detail with reference to the accompanying drawings.

[0028] Figure 1A This is a cross-sectional view showing the electronic component housing package and electronic device according to the embodiments of this disclosure. Figure 1B This is a top view showing the electronic component housing package and electronic device according to the embodiments of this disclosure. Figure 1A express Figure 1B The cross section at the arrow AA line. Figure 1B This indicates that the structure of cover 5 has been omitted.

[0029] The electronic device 100 disclosed herein includes: an electronic component housing package 1; and an electronic component 6 housed in a housing portion 3 of the electronic component housing package 1. The electronic component 6 is a component that performs high-frequency signal input, output, or both. The electronic component 6 may be, for example, a semiconductor laser component that converts a high-frequency electrical signal into an optical signal. Alternatively, the electronic component 6 may be an LN (LiNbO3) component that modulates laser light passing through an optical waveguide using a high-frequency electrical signal. Otherwise, the electronic component 6 is not particularly limited as long as it performs high-frequency signal input, output, or both. The frequency band of the transmitted signal is 80 GHz or higher, but the frequency band of the transmission signal to be transmitted may be less than 80 GHz.

[0030] The electronic component housing package 1 includes: a base 4 having a wall 2 and a receiving portion 3 surrounded by the wall 2; a coaxial line 10 located on the wall 2; a transmission line 20 located on the side of the wall 2; and a cover 5 blocking the opening of the receiving portion 3. The base 4 may be made of metal. Alternatively, the base 4 may be integrally formed from a single component, including the wall 2. Or, the wall 2 of the base 4 and the base bottom (the bottom of the receiving portion 3, etc.) of the base 4 may be separately constructed, for example in… Figure 1AThe two dashed parts are combined through interlocking, joining and other techniques to form a structure.

[0031] Figure 2 It is a three-dimensional cross-sectional view showing the periphery of the connection between the coaxial line and the transmission line. Figure 3A This is a cross-sectional view showing the periphery of the aforementioned connecting portion. Figure 3B This is a diagram representing the central conductor. Figure 3A The cross-sectional view shows a section passing through the central axis of the central conductor 11 and perpendicular to the upper surface of the transmission line 20.

[0032] The transmission line 20 has: an insulating plate 21 that is plate-shaped and has an upper surface S11 and a lower surface S12. Figure 2 The signal conductor 22 is located on the upper surface S11; the grounding conductor 23 is located on the upper surface S11, sandwiching the signal conductor 22; and the grounding conductor 24 is located on the lower surface S12. The insulating plate 21 is a dielectric and may be ceramic. The transmission line 20 may be referred to as a coplanar line with a back conductor. The transmission line 20 is located inside the housing 3, but may also be located outside the housing 3 on the side of the wall 2.

[0033] like Figure 2 as well as Figure 3A As shown, the coaxial line 10 has: a longer core wire, i.e., a center conductor 11; an outer peripheral conductor 13 located radially outward of the center conductor 11; and a dielectric 12 located between the center conductor 11 and the outer peripheral conductor 13. The outer peripheral conductor 13 may have a cylindrical inner surface. Viewed from the long side of the center conductor 11, the dielectric 12 may be located circumferentially around the center conductor 11 between the center conductor 11 and the outer peripheral conductor 13. Viewed from the long side of the center conductor 11, the center conductor 11 may be located at the center of the dielectric 12. Figure 2 as well as Figure 3A In this structure, the outer peripheral conductor 13 is a separate structure from the wall 2, but the outer peripheral conductor 13 can also be an integral structure with the wall 2.

[0034] The dielectric 12 has a first end face S1 facing the transmission line 20. The first end face S1 can be a surface that is substantially perpendicular to the long side direction of the center conductor 11. The dielectric 12 can be, for example, glass, or made of other materials. The relative permittivity of the dielectric 12 can be 3 or higher.

[0035] The wall 2 has an opening H1 leading to the first end face S1 of the dielectric 12. The opening H1 can be a through hole H0 for accommodating the coaxial line 10. Figure 2Part of the transmission line 20. The cross-section of the opening H1, which is perpendicular to the long side of the center conductor 11, can have a circular shape centered on the center conductor 11. The diameter of the opening H1 can change in a stepped manner from the side near the transmission line 20 to the side near the first end face S1, with the diameter on the side near the dielectric 12 being larger than the diameter on the opposite side.

[0036] The opening H1 includes an annular space R. The annular space R corresponds to the portion of the interior space of the opening H1 excluding the area where the central conductor 11 is located. That is, the annular space R is connected to the first end face S1, and the outer diameter of the annular space R is larger than the outer diameter of the space in the opening H1 located on the opposite side of the first end face S1. The outer diameter of the annular space R can be approximately the same as the inner diameter of the outer peripheral conductor 13. The annular space R reduces the significant deformation of the electric field distribution of the transmitted signal (TEM (Transverse Electro Magnetic) wave) traveling within the dielectric 12 of the coaxial line 10 when it leaves the dielectric 12 with the first end face S1 as the boundary.

[0037] like Figure 3B As shown, the center conductor 11 has: a first section Se1 having a first thickness φ1; and a second section Se2 having a second thickness φ2 smaller than the first thickness φ1. The cross-sectional shape of the center conductor 11 perpendicular to its long side is circular, and the first thickness φ1 and the second thickness φ2 can also be referred to as diameters. When the cross-sectional shape perpendicular to the long side of the center conductor 11 is not circular, the first thickness φ1 and the second thickness φ2 can refer to the maximum width or the average width "= (maximum width + minimum width) / 2". In this specification, the first thickness and the second thickness refer to quantities having units of length.

[0038] At least a portion of the first section Se1 of the center conductor 11 protrudes from the first end face S1 of the dielectric 12 to the outside of the opening H1. The portion of the first section Se1 protruding to the outside of the opening H1 is connected to the signal conductor 22 of the transmission line 20. The center conductor 11 can be connected via the conductive member e ( Figure 2 It can be connected to signal conductor 22, or directly to signal conductor 22. The first section Se1 can have the same cross-sectional shape and size at any position along its long side, except for a rounded front end on the protruding side. The second section Se2 can also have the same cross-sectional shape and size at any position within the dielectric 12 along its long side. Hereinafter, the side of the center conductor 11 closer to the transmission line 20 along its long side will be referred to as the "protruding side," and the opposite side will be referred to as the "anti-protruding side."

[0039] In the long side direction of the center conductor 11, the end E1 of the anti-protruding side of the first interval Se1 can be located between a specific position p1 within the dielectric 12 and the first end face S1. In this specification, when it is said that B is located between C and D in the A direction, it also includes a configuration in the A direction where the positions of B and C are the same, and a configuration in the A direction where the positions of B and D are the same.

[0040] The specific position p1 is located at 1 / 8 of the effective wavelength of the transmitted signal from the first end face S1. The distance from the first end face S1 to the specific position p1 is sufficiently short relative to the effective wavelength of the transmitted signal.

[0041] The inner diameter φ4 of the outer conductor 13 is set according to the second diameter φ2 of the second interval Se2 of the center conductor 11 and the relative permittivity of the dielectric 12, so as to match a given impedance. The inner diameter φ3 of the opening H1 is set according to the first diameter φ1 of the first interval Se1 of the center conductor 11, so as to match a given impedance.

[0042] In the center conductor 11, the first diameter φ1 of the first interval Se1 can be less than twice the second diameter φ2 of the second interval Se2. Furthermore, the first diameter φ1 can be less than three times but greater than twice the second diameter φ2. The inner diameter φ4 of the outer peripheral conductor 13 can be less than twice the inner diameter φ3 of the opening H1. With these ratios, the abrupt change in the electric field distribution of the transmitted signal at the end of the coaxial line 10 is reduced, thus minimizing the degradation of transmission characteristics.

[0043] <Signal transmission characteristics>

[0044] Next, simulation results of the signal transmission characteristics of Embodiments 1-7 and Comparative Examples 1-8 are shown. The simulated objects, namely Embodiments 1-7 and Comparative Examples 1-8, have the following structures. First, the cross-sectional shape orthogonal to the axial direction of the center conductor 11 is circular, and the inner surface of the outer peripheral conductor 13 is cylindrical. Furthermore, the parameters around the connection between the coaxial line 10 and the transmission line 20 are set to assume a transmission signal frequency of 80 GHz band, so as to achieve impedance matching. That is, the inner diameter φ4 of the outer peripheral conductor 13 is set to match the second thickness φ2 of the second interval Se2 of the center conductor 11, and the inner diameter φ3 of the smaller part of the opening H1 is set to match the first thickness φ1 of the first interval Se1 of the center conductor 11. In addition, including Comparative Examples 1-8, the structure of each simulated object has an annular space R.

[0045] Several parameters around the connection between the coaxial line 10 and the transmission line 20 in Embodiments 1 to 7 and Comparative Examples 1 to 8 are different. The different parameters are the first thickness φ1 of the first section Se1 in the center conductor 11, the second thickness φ2 of the second section Se2, and the position of the end E1 on the reverse protruding side of the first section Se1.

[0046] Hereinafter, "φ1" represents the value of the first thickness φ1 of the first interval Se1, and "φ2" represents the value of the second thickness φ2 of the second interval Se2. Furthermore, the position of the end E1 on the reverse protruding side of the first interval Se1 is represented by the distance "D" from the first end face S1 (see reference). Figure 3A When the distance “D” is positive, the characterizing terminal E1 moves away from the first end face S1 toward the inside of the dielectric 12; when the distance is negative, the characterizing terminal E1 moves away from the first end face S1 toward the outside of the dielectric 12.

[0047] <Thickness of the first interval Se1 and the second interval Se2>

[0048] Figure 4A as well as Figure 4B These are graphs illustrating the characteristics of Embodiment 1 and Comparative Examples 1 and 2. Figure 4A The frequency response of the reflection coefficient Figure 4B The frequency characteristics represent the transmission coefficient. The parameters for Embodiment 1 and Comparative Examples 1 and 2 are as follows.

[0049] Implementation method 1: φ1=0.22mm, φ2=0.15mm, D=0mm

[0050] Comparative Example 1: φ1=φ2=0.22mm

[0051] Comparative Example 2: φ1=φ2=0.15mm

[0052] Comparative Examples 1 and 2 are examples where the thickness of the center conductor 11 is the same throughout the inside and outside of the dielectric 12. On the other hand, in Embodiment 1, there is a difference between the first thickness φ1 of the first interval Se1 of the center conductor 11 and the second thickness φ2 of the second interval Se2 of the center conductor 11, and the first thickness φ1 is larger than the second thickness φ2.

[0053] Figure 4A It is shown that the reflection coefficient in the 80GHz band is approximately -16dB in Comparative Examples 1 and 2, while in Embodiment 1, which has the aforementioned structural differences, it is less than -18dB. This result demonstrates that, according to Embodiment 1 with the aforementioned structural differences, good reflection characteristics can be obtained in a higher frequency band.

[0054] Figure 4BIt is shown that the transmission coefficient in the 80 GHz band is higher than that of Comparative Examples 1 and 2. This result demonstrates that, according to Embodiment 1, good transmission characteristics can be obtained in a higher frequency band.

[0055] <The ratio of the thickness of interval 1 Se1 to interval 2 Se2>

[0056] Figure 5A as well as Figure 5B These are charts illustrating the characteristics of Embodiments 1, 2, and Comparative Example 1. Figure 5A The frequency response of the reflection coefficient Figure 5B The frequency characteristics represent the transmission coefficient. The parameters for Embodiments 1, 2, and Comparative Example 1 are as follows.

[0057] Implementation method 1: φ1=0.22mm, φ2=0.15mm, D=0mm

[0058] Implementation method 2: φ1=0.22mm, φ2=0.1mm, D=0mm

[0059] Comparative Example 1: φ1=φ2=0.22mm

[0060] In Embodiment 2, the first thickness φ1 of the first interval Se1 of the center conductor 11 is more than twice but less than three times the second thickness φ2 of the second interval Se2. In Embodiment 1, the first thickness φ1 of the first interval Se1 of the center conductor 11 is less than twice the second thickness φ2 of the second interval Se2.

[0061] Figure 5A It is shown that the reflection coefficient in the 80GHz band is below -18dB in both Embodiment 1 and Embodiment 2. This result shows that good reflection characteristics can be obtained in higher frequency bands regardless of whether the ratio of the first thickness φ1 to the second thickness φ2 is less than 2:1 in Embodiment 1, or 2 to 3:1 in Embodiment 2.

[0062] Figure 5B It is shown that the transmission coefficient in the 80GHz band is higher in Embodiment 1 and Embodiment 2 than in Comparative Example 1. This result shows that, according to Embodiment 1 and Embodiment 2, which have the aforementioned ratio of the first thickness φ1 to the second thickness φ2, good transmission characteristics can be obtained in a higher frequency band.

[0063] <The position of end E1 on the anti-protruding side of the first interval Se1>

[0064] Figure 6A as well as Figure 6B These are charts illustrating the characteristics of embodiments 1 and 3, and comparative examples 3 and 4. Figure 6AThe frequency response of the reflection coefficient Figure 6B The frequency characteristics represent the transmission coefficient. The parameters for Embodiments 1 and 3, and Comparative Examples 3 and 4 are as follows.

[0065] Implementation method 1: φ1=0.22mm, φ2=0.15mm, D=0mm

[0066] Implementation method 3: φ1=0.22mm, φ2=0.15mm, D=0.1mm

[0067] Comparative Example 3: φ1=0.22mm, φ2=0.15mm, D=-0.1mm

[0068] Comparative Example 4: φ1=0.22mm, φ2=0.15mm, D=0.2mm

[0069] Comparative Examples 3 and 4 are examples where the end E1 of the first section Se1 in the center conductor 11 is located outside the dielectric 12 (closer to the transmission line 20 than the first end face S1) and an example where it is located further inside the dielectric 12 from the first end face S1.

[0070] On the other hand, in embodiments 1 and 3, in the long side direction of the center conductor 11, the end E1 of the reverse protruding side of the first interval Se1 in the center conductor 11 is located within a suitable position from the first end face S1 of the dielectric 12 to the dielectric 12.

[0071] Figure 6A It is shown that the maximum reflection coefficient in the 70GHz-90GHz frequency band is approximately -15dB and -16dB in Comparative Examples 3 and 4, respectively, while in Embodiments 1 and 3 it is less than -18dB and less than -21dB, respectively. This result shows that Embodiments 1 and 3, where the end E1 of the first interval Se1 is located within the aforementioned range of the dielectric 12, can obtain good reflection characteristics in higher frequency bands. Furthermore, this result shows that Embodiment 3, where the end E1 of the first interval Se1 is located within a suitable range of the dielectric 12, can obtain even better reflection characteristics in higher frequency bands.

[0072] Figure 6B The results show that the transmission coefficient in the 70GHz-90GHz frequency band is higher than that in Comparative Examples 3 and 4, while the values ​​in Embodiments 1 and 3 are higher. This demonstrates that, according to Embodiments 1 and 3, good transmission characteristics can be obtained in higher frequency bands.

[0073] <Detailed location of end E1 on the anti-protruding side of the first interval Se1>

[0074] Figure 7A as well as Figure 7BThese are diagrams illustrating the characteristics of implementation methods 1 and 3-5. Figure 7A The frequency response of the reflection coefficient Figure 7B The frequency characteristics represent the transmission coefficient. The parameters for embodiments 1, 3-5 are as follows.

[0075] Implementation method 1: φ1=0.22mm, φ2=0.15mm, D=0mm

[0076] Implementation method 3: φ1=0.22mm, φ2=0.15mm, D=0.1mm

[0077] Implementation method 4: φ1=0.22mm, φ2=0.15mm, D=0.05mm

[0078] Implementation method 5: φ1=0.22mm, φ2=0.15mm, D=0.15mm

[0079] In embodiments 1 and 3-5, in the long side direction of the central conductor 11, the end E1 of the reverse protruding side of the first interval Se1 in the central conductor 11 is located at a specific position p1 within the first end face S1 and the dielectric 12. Figure 3A Between ), as described above, the specific position p1 is located 1 / 8 of the effective wavelength of the transmitted signal away from the first end face S1. When the frequency of the transmitted signal is set to 80 GHz and the relative permittivity of the dielectric 12 is set to 6, the distance from the first end face S1 to the specific position p1 is about 0.19 mm.

[0080] Furthermore, in embodiments 1, 3-5, the ratio of the thickness of the first interval Se1 to the second interval Se2 of the central conductor 11 is less than 2.

[0081] Figure 7A The results show that the maximum reflection coefficient in the 70GHz-90GHz band is below -18dB in all embodiments 1, 3-5. Based on these results, embodiments 1, 3-5, where the end E1 of the first interval Se1 is located between the first end face S1 and a specific position p1 in the long side direction of the center conductor 11, can achieve good reflection characteristics in higher frequency bands.

[0082] Figure 7B The results show that the minimum transmission coefficient in the 70GHz-90GHz frequency band is above -0.5dB in Embodiments 1 and 3-5. This demonstrates that good transmission characteristics can be obtained in higher frequency bands according to Embodiments 1 and 3-5.

[0083] <The position of end E1 on the reverse convex side of the first interval Se1 (in the case of the second interval Se2 being thinner)>

[0084] Figure 8Aas well as Figure 8B These are graphs illustrating the characteristics of embodiments 2 and 10, and comparative examples 5 and 7. Figure 8A The frequency response of the reflection coefficient Figure 8B The frequency characteristics representing the transmission coefficient are as follows. The parameters for Embodiments 2, 10, and Comparative Examples 5, 7 are as follows.

[0085] Implementation method 2: φ1=0.22mm, φ2=0.10mm, D=0mm

[0086] Comparative Example 5: φ1=0.22mm, φ2=0.10mm, D=-0.1mm

[0087] Implementation method 10: φ1=0.22mm, φ2=0.10mm, D=0.1mm

[0088] Comparative Example 7: φ1=0.22mm, φ2=0.10mm, D=0.2mm

[0089] In Embodiments 2, 10, and Comparative Examples 5, 7, the ratio of the thickness of the first section Se1 to the second section Se2 of the center conductor 11 is greater than twice and less than three times. On the other hand, the positions of the anti-protruding end E1 of the first section Se1 are significantly different from each other. In Embodiment 2, the anti-protruding end E1 of the first section Se1 is flush with the first end face of the dielectric 12.

[0090] Figure 8A It is shown that the maximum reflection coefficient in the 70GHz-90GHz frequency band is -15dB or more in Comparative Examples 5, 7, and Embodiment 10, while it is -18dB or less in Embodiment 2. This result shows that Embodiment 2, in which the ratio of the thickness of the first interval Se1 to the thickness of the second interval Se2 is 2 to 3 times and the end E1 of the first interval Se1 is flush with the first end face S1 of the dielectric 12, can achieve good reflection characteristics at higher frequency bands. Although Embodiment 2 has relatively good reflection characteristics, good reflection characteristics can also be obtained at higher frequencies in Embodiment 10.

[0091] Figure 8B It is shown that the minimum transmission coefficient in the 70GHz-90GHz frequency band is below -0.5dB in Comparative Examples 5, 7, and Embodiment 10, while it is around -0.4dB in Embodiment 2. This result shows that, according to Embodiment 2, good transmission characteristics can be obtained at higher frequency bands. Although Embodiment 2 has relatively good transmission characteristics, good transmission characteristics can also be obtained at higher frequencies in Embodiment 10.

[0092] <Detailed location of end E1 on the anti-protruding side of section 1 Se1 (in the case of section 2 Se2)>

[0093] Figure 9A as well as Figure 9B These are diagrams illustrating the characteristics of implementation methods 2, 6, 7, and 11. Figure 9A The frequency response of the reflection coefficient Figure 9B The frequency characteristics represent the transmission coefficient. The parameters for embodiments 2, 6, 7, and 11 are as follows.

[0094] Implementation method 2: φ1=0.22mm, φ2=0.10mm, D=0mm

[0095] Implementation method 6: φ1=0.22mm, φ2=0.10mm, D=0.01mm

[0096] Implementation method 7: φ1=0.22mm, φ2=0.10mm, D=0.02mm

[0097] Implementation method 11: φ1=0.22mm, φ2=0.10mm, D=0.05mm

[0098] In embodiments 2, 6, 7, and 11, the ratio of the thickness of the first section Se1 to the second section Se2 of the center conductor 11 is greater than twice and less than three times. On the other hand, the positions of the anti-protruding end E1 of the first section Se1 are slightly different from each other. In embodiments 2, 6, and 7, the anti-protruding end E1 of the first section Se1 is located within 3% of the effective wavelength of the signal transmitted from the first end face S1.

[0099] Figure 9A It is shown that the maximum reflection coefficient in the 70GHz-90GHz band is above -15dB in Embodiment 11, while it is below -18dB in Embodiments 2, 6, and 7. This result shows that Embodiments 2, 6, and 7, where the ratio of the thickness of the first interval Se1 to the second interval Se2 is 2 to 3 times and the end E1 of the first interval Se1 is located within 3% of the effective wavelength of the transmitted signal inside the dielectric 12, can achieve good reflection characteristics at higher frequency bands. While Embodiments 2, 6, and 7 have relatively good reflection characteristics, good reflection characteristics can also be obtained at higher frequencies in Embodiment 11.

[0100] Figure 9BThe results show that the transmission coefficient in the 70GHz-90GHz band is higher in Embodiments 2, 6, and 7 compared to the value in Embodiment 11. This demonstrates that Embodiments 2, 6, and 7 achieve good transmission characteristics at higher frequency bands. While Embodiments 2, 6, and 7 exhibit relatively good transmission characteristics, Embodiment 11 also achieves good transmission characteristics at higher frequencies.

[0101] (Variation example)

[0102] Figure 10A This is a cross-sectional view of the coaxial lines and transmission lines of an electronic component housing package according to a modified embodiment of the present disclosure. Figure 10B This is a diagram showing the center conductor of the package used to house electronic components in the modified example. For example... Figure 10B As shown, the center conductor 11 may have a tapered intermediate section Sei between the first section Se1 and the second section Se2. The modified electronic component housing package 1A may have the same constituent elements as embodiments 1 to 7, except for having the intermediate section Sei.

[0103] The thickness of the intermediate interval Sei gradually changes proportionally along the long side of the central conductor 11. At the boundary between the first interval Se1 and the intermediate interval Sei (end E1 of the first interval Se1), the thickness of the intermediate interval Sei is the same as the first thickness φ1 of the first interval Se1; at the boundary E2 between the second interval Se2 and the intermediate interval Sei, the thickness is the same as the second thickness φ2 of the second interval Se2. The cross-section of the intermediate interval Sei orthogonal to the long side of the central conductor 11 can be circular.

[0104] In the modified electronic component housing package 1A, the end E1 of the anti-protruding side of the first interval Se1 is located between the first end face S1 of the dielectric 12 and the aforementioned specific position p1 in the long side direction of the central conductor 11. Furthermore, the boundary E2 between the intermediate interval Se1 and the second interval Se2 is located between the end E1 of the first interval Se1 and the aforementioned specific position p1 in the long side direction of the central conductor 11. In other words, the boundary E2 can be considered the end of the protruding side of the second interval Se2.

[0105] <Signal transmission characteristics>

[0106] Next, simulation results of the signal transmission characteristics of embodiments 8 and 9 with intermediate interval Sei are shown. The simulation conditions are the same as those of embodiments 1-7 described above, except for the parameters related to the intermediate interval Sei. The parameters that differ from embodiments 1-7 include the position of the boundary E2 between the intermediate interval Sei and the second interval Se2. Hereinafter, similar to how the distance “D” characterizes the position of the end E1 on the anti-protruding side of the first interval Se1, the position of the boundary E2 is characterized by the distance “D2” from the first end face S1 of the dielectric 12. If the two distances “D, D2” and the thicknesses “φ1, φ2” of the first interval Se1 and the second interval Se2 are determined, then the taper angle θt of the intermediate interval Sei (… Figure 10B )Decide.

[0107] Figure 11A as well as Figure 11B These are charts illustrating the characteristics of implementation methods 3, 8, and 9. Figure 11A The frequency response of the reflection coefficient Figure 11B The frequency characteristics represent the transmission coefficient. The parameters for embodiments 3, 8, and 9 are as follows.

[0108] Implementation method 3: φ1=0.22mm, φ2=0.15mm,

[0109] D=0.1mm (no intermediate interval Sei)

[0110] Implementation method 8: φ1=0.22mm, φ2=0.15mm,

[0111] D=0.1mm, D2=0.135mm

[0112] Implementation method 9: φ1=0.22mm, φ2=0.15mm,

[0113] D=0.1mm, D2=0.15mm

[0114] In Embodiment 8, the taper angle θt is equivalent to 90°, and in Embodiment 9, the taper angle θt is equivalent to 70°. In Embodiments 8 and 9, the boundary E2 between the intermediate interval Sei and the second interval Se2 is located between the first end face S1 and a specific position p1 within the dielectric 12 in the long side direction of the central conductor 11.

[0115] Figure 9A as well as Figure 9BThe reflection and transmission coefficients for the 70GHz-90GHz frequency band are shown to be equivalent in embodiments 8 and 9 with the intermediate interval Sei and in embodiment 3 without the intermediate interval Sei. Based on these results, it is shown that embodiments 8 and 9, in which the central conductor 11 includes a tapered intermediate interval Sei and the boundary E2 between the intermediate interval Sei and the second interval Se2 is within the aforementioned range, can also achieve good signal transmission characteristics at higher frequency bands.

[0116] As described above, the electronic component housing package 1, 1A according to this embodiment includes: a base 4 having a wall 2; a coaxial line 10 located on the wall 2; and a transmission line 20 connected to the coaxial line 10 on the side of the wall 2. Furthermore, the wall 2 has an opening H1 leading to a first end face S1 of the dielectric 12 of the coaxial line 10, and the opening H1 includes an annular space R connected to the first end face S1. Furthermore, the center conductor 11 includes: a first section Se1 having a first diameter φ1 and at least a portion protruding from the first end face S1; and a second section Se2 having a second diameter φ2 smaller than the first diameter φ1 and located within the dielectric 12. Moreover, in the long side direction of the center conductor 11, the end E1 of the first section Se1 on the reverse protruding side is located between a specific position p1 within the dielectric 12 and the first end face S1. Furthermore, the specific position p1 is located at 1 / 8 of the effective wavelength of the transmitted signal from the first end face S1, which is sufficiently short relative to the effective wavelength of the transmitted signal. With this structure, even when using signals in a higher frequency band, the signal transmission characteristics in the connection between the coaxial line 10 and the transmission line 20 can be improved.

[0117] In the electronic component housing packages 1 and 1A of this embodiment, the first thickness φ1 of the first interval Se1 of the center conductor 11 can be less than twice the second thickness φ2 of the second interval Se2. According to this structure, the signal transmission characteristics of higher frequency bands in the connection portion between the coaxial line 10 and the transmission line 20 can be improved.

[0118] Furthermore, as shown in the modified electronic component housing package 1A, the center conductor 11 may include a tapered intermediate section Sei between the first section Se1 and the second section Se2. Furthermore, the boundary E2 between the intermediate section Sei and the second section Se2 may be located between a specific position p1 and the first end face S1 along the long side direction of the center conductor 11. This structure also improves the signal transmission characteristics of higher frequency bands in the connection portion between the coaxial line 10 and the transmission line 20.

[0119] In the electronic component housing packages 1 and 1A of this embodiment, the transmission line 20 may include a signal conductor 22, and a portion of the first interval Se1 of the center conductor 11 may protrude further outward than the opening H1 and be connected directly or via a conductive member e to the signal conductor 22. In such a connection between the coaxial line 10 and the transmission line 20, the electronic component housing packages 1 and 1A of this embodiment can also improve signal transmission characteristics at higher frequency bands.

[0120] Furthermore, the electronic device 100 according to this embodiment can improve the signal transmission characteristics of the high-frequency band by having electronic component storage packages 1 and 1A.

[0121] The embodiments of this disclosure have been described above. However, the electronic component housing package and electronic device of this disclosure are not limited to the above embodiments and can be appropriately modified without departing from the spirit of this disclosure.

[0122] Industrial availability

[0123] This disclosure can be used in packages for storing electronic components and in electronic devices.

[0124] Symbol Explanation

[0125] 1.1A Package for storing electronic components

[0126] 2. Wall

[0127] 3 Containment Department

[0128] 4. Matrix

[0129] 5. Cover

[0130] 6 Electronic components

[0131] 10 coaxial lines

[0132] 11. Central conductor

[0133] 12 Dielectric

[0134] 13. Peripheral conductor

[0135] 20 Transmission Lines

[0136] 22 Signal conductor

[0137] S1 First end face

[0138] Se1, first interval

[0139] Se2, second interval

[0140] Sei intermediate interval

[0141] E1, the end of the anti-protruding side of the first interval.

[0142] The boundary between the middle interval and the second interval of E2

[0143] θt taper angle

[0144] φ1 First thickness

[0145] φ2 Second coarseness

[0146] p1 Specific location

[0147] Distances of D and D2 from the first end face

[0148] H1 opening

[0149] R Annular space

[0150] φ3, φ4 diameter

[0151] e Conductive components

[0152] 100 Electronic devices.

Claims

1. A package for storing electronic components, comprising: The matrix has walls; Coaxial lines, located in the wall; and The transmission line is connected to the coaxial line on the side of the wall. The coaxial line has: a longer center conductor on one side; peripheral conductor; and the dielectric located between the central conductor and the outer peripheral conductor, The dielectric has a first end face facing the transmission line. The wall has an opening leading to the first end face. The opening includes an annular space that connects to the first end face. The outer diameter of the annular space is larger than the outer diameter of the space in the opening located on the side opposite to the first end face. The central conductor comprises: a first section having a first thickness and at least a portion protruding from the first end face; and a second section having a second thickness less than the first thickness and located within the dielectric. Along the long side of the central conductor, the end of the anti-protruding side of the first interval is located between the first end face and a specific position within the dielectric. The specific position is located at 1 / 8 of the effective wavelength of the transmitted signal, facing inward from the first end towards the dielectric.

2. The electronic component storage package according to claim 1, wherein, The first thickness is less than twice the second thickness.

3. The electronic component storage package according to claim 1, wherein, The central conductor includes a tapered intermediate section between the first section and the second section. The boundary between the intermediate interval and the second interval is located between the first end face and the specific position in the long side direction of the central conductor.

4. The electronic component storage package according to claim 1, wherein, The transmission line includes signal conductors. A portion of the first interval of the central conductor protrudes further outward than the opening and is connected directly or via a conductive member to the signal conductor.

5. An electronic device comprising: The package for storing electronic components according to any one of claims 1 to 4; and the electronic component, stored in the package for storing electronic components.

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