A display panel and a manufacturing method thereof

Abstract

The present application provides a display panel and a manufacturing method thereof, wherein the display panel comprises: a plurality of pixel units, which are arranged in the display area of ​​the display panel; a light-emitting unit, which is arranged in the non-display area of ​​the display panel, and the organic light-emitting device of the light-emitting unit and the organic light-emitting device of the pixel unit have the same structure; a first detection unit, which is arranged in the non-display area of ​​the display panel and corresponds to the light-emitting unit, and the first detection unit is configured to detect the first brightness information of the light-emitting unit, so as to perform signal compensation on the data signal of the pixel unit through the change of the first brightness information. Through the above method, the brightness information of the light-emitting unit is detected by the detection unit, causing the current of the detection unit to change, and the data signal of the pixel unit is compensated according to the current change to achieve the brightness stability of the display panel.

Description

Technical Field

[0001] The present application mainly relates to the field of display technology, and in particular to a display panel and a manufacturing method thereof. Background Art

[0002] Organic light-emitting diodes (OLED) as a current-type light-emitting device have been increasingly used in high-performance displays. Due to its self-luminous properties, compared with liquid crystal displays (LCDs), active-matrix organic light-emitting diodes (AMOLEDs) have many advantages such as high contrast, ultra-thinness, and flexibility.

[0003] Compared with LCD screens, organic light-emitting diode products in the terminal market will also encounter problems with afterimages and brightness attenuation. Compared with the inorganic light-emitting materials in the backlight of LCD screens, the stability of organic light-emitting materials will be affected; and over time, not only will the electrical properties of thin film transistors (TFTs) change, but organic light-emitting diode devices will also deteriorate. Generally, the deterioration of thin film transistor devices can be compensated at the data input end through external or internal compensation circuits; but for organic light-emitting diodes, brightness attenuation will occur at the same current, and since there is currently no good way to detect the brightness changes of OLEDs when the current remains unchanged, there is currently no suitable compensation method to compensate for this situation. Therefore, the problem of brightness attenuation of organic light-emitting diodes at the same current still needs to be solved. Summary of the invention

[0004] The main purpose of the present application is to propose a display panel and a method for manufacturing the same, so as to solve the problem that the brightness of organic light emitting diodes decays under the same current, thereby reducing their luminous efficiency and causing brightness drop and afterimage under long-term working conditions.

[0005] To solve the above problems, the present application provides a display panel and a manufacturing method thereof, wherein the display panel comprises: a plurality of pixel units, which are arranged in a display area of ​​the display panel; a light-emitting unit, which is arranged in a non-display area of ​​the display panel, and the structure of the organic light-emitting device of the light-emitting unit and the organic light-emitting device of the pixel unit are the same; a first detection unit, which is arranged in the non-display area of ​​the display panel and corresponds to the light-emitting unit, and the first detection unit is configured to detect first brightness information of the light-emitting unit so as to perform signal compensation on the data signal of the pixel unit according to the change of the first brightness information.

[0006] In one embodiment, the first detection unit includes a first electrode layer, a photosensitive layer, and a second electrode layer that are stacked together. The photosensitive layer is used to detect the brightness of the light-emitting unit to generate a detection current between the first electrode layer and the second electrode layer. The detection current is used to indicate the brightness of the light-emitting unit.

[0007] In one embodiment, the photosensitive layer is an amorphous silicon layer.

[0008] In one embodiment, the organic light emitting device includes an anode layer, a light emitting layer and a cathode layer which are stacked, and the anode layer is configured to be driven by a constant current.

[0009] In one embodiment, the light-emitting layer is a red light-emitting layer.

[0010] In one embodiment, the display panel also includes a second detection unit, which is arranged in a non-display area of ​​the display panel and is staggered with the light-emitting unit. The second detection unit is configured to detect second brightness information of external natural light so as to determine third brightness information of the light-emitting unit based on the difference between the first brightness information and the second brightness information, and perform signal compensation on the data signal of the pixel unit according to the change of the third brightness information.

[0011] To solve the above problems, the present application also provides a method for manufacturing a display panel, the method comprising: providing a substrate; forming a TFT device and a first detection unit on the substrate, the first detection unit being located in a non-display area; forming an organic light-emitting device, at least part of the organic light-emitting device corresponding to the first detection unit; wherein the TFT device and the organic light-emitting device located in the display area form a pixel unit, and the TFT device and the organic light-emitting device located in the non-display area form a light-emitting unit, and the first detection unit is configured to detect first brightness information of the light-emitting unit, so as to perform signal compensation on the data signal of the pixel unit according to the change of the first brightness information.

[0012] In one embodiment, a TFT device and a first detection unit are formed on a substrate, including: forming a first conductive layer on the substrate; etching the first conductive layer and the photosensitive layer to form a light-shielding layer and a first electrode layer; forming a photosensitive layer on the first electrode layer; forming a first insulating layer on the light-shielding layer; forming a semiconductor layer on the first insulating layer and the photosensitive layer; etching the semiconductor layer to form a first semiconductor layer and a second semiconductor layer; processing the second semiconductor layer to form a second electrode layer, the first electrode layer, the photosensitive layer and the second electrode layer forming a first detection unit; forming a second insulating layer, a gate layer, a dielectric layer and a source-drain layer in sequence on the first semiconductor layer, the first semiconductor layer, the second insulating layer, the gate layer, the dielectric layer and the source-drain layer forming a TFT device.

[0013] In one embodiment, forming an organic light-emitting device includes: forming a passivation layer on the TFT device and the first detection unit; forming a protective layer on the passivation layer; and forming the organic light-emitting device on the protective layer.

[0014] To solve the above problems, the present application also provides a display device, which includes a housing and a display panel, wherein the display panel is any display panel as described above or a display panel manufactured using any of the manufacturing methods as described above.

[0015] Through the above method, the detection unit in the display panel is used to detect the light emitting brightness of the light emitting unit to obtain brightness information. According to the detected and recorded brightness information change of the organic light emitting diode under the same current, the current in the detection unit changes, thereby compensating the data signal of the pixel unit to keep the brightness of the organic light emitting diode stable. BRIEF DESCRIPTION OF THE DRAWINGS

[0016] In order to more clearly illustrate the technical solutions in the embodiments of the present application, the following briefly introduces the drawings required for use in the description of the embodiments. Obviously, the drawings described below are only some embodiments of the present application. For ordinary technicians in this field, other drawings can be obtained based on these drawings without creative work. Among them:

[0017] Figure 1 It is a structural schematic diagram of a light-emitting unit and a detection unit of an embodiment of a display panel provided by the present application;

[0018] Figure 2 is a schematic diagram of the position structure of a display panel according to an embodiment of the present application;

[0019] Figure 3 is a schematic diagram of the position of an embodiment of a second detection unit provided by the present application;

[0020] Figure 4 is a structural schematic diagram of an embodiment of a second detection unit provided by the present application;

[0021] Figure 5 It is a schematic diagram of the steps of a manufacturing method of a display panel according to an embodiment of the present application;

[0022] Figure 6a-Figure 6i is a structural schematic diagram of a method for manufacturing a display panel according to an embodiment of the present application;

[0023] Figure 7 yes Figure 5 Schematic diagram of the sub-step flow chart of step S20;

[0024] Figure 8 yes Figure 5Schematic diagram of the sub-step flow chart of step S30;

[0025] Fig. 9 It is a structural schematic diagram of an embodiment of a display device provided in the present application.

[0026] Figure numerals: 10a, substrate; 10b, polarizing layer; 20, light-emitting unit; 21, TFT device; 211, first semiconductor layer; 212, second insulating layer; 213, gate layer; 214, dielectric layer; 215, source-drain layer; 22, organic light-emitting device; 221, anode layer; 222, light-emitting layer; 223, cathode layer; 30, first detection unit; 31, first electrode layer; 32, photosensitive layer; 33, second electrode layer; 11, first conductive layer; 11a, shading layer; 12, first insulating layer; 13, semiconductor layer; 14, passivation layer; 15, protective layer; 16, pixel defining layer; 17, first encapsulation layer; 18, second encapsulation layer; 300, display device; 200, housing; 100, display panel; 40, pixel unit; 50, second detection unit. DETAILED DESCRIPTION

[0027] The technical solutions in the embodiments of the present application will be clearly and completely described below in conjunction with the drawings in the embodiments of the present application. It will be appreciated that the specific embodiments described herein are only used to explain the present application, rather than to limit the present application. It should also be noted that, for ease of description, only some but not all structures related to the present application are shown in the drawings. Based on the embodiments in the present application, all other embodiments obtained by ordinary technicians in the art without making creative work are within the scope of protection of the present application.

[0028] The terms "first", "second", etc. in this application are used to distinguish different objects, rather than to describe a specific order. In addition, the terms "including" and "having" and any variations thereof are intended to cover non-exclusive inclusions. For example, a process, method, system, product or device that includes a series of steps or units is not limited to the listed steps or units, but optionally includes steps or units that are not listed, or optionally includes other steps or units inherent to these processes, methods, products or devices.

[0029] Reference to "embodiments" herein means that a particular feature, structure, or characteristic described in conjunction with the embodiments may be included in at least one embodiment of the present application. The appearance of the phrase in various locations in the specification does not necessarily refer to the same embodiment, nor is it an independent or alternative embodiment that is mutually exclusive with other embodiments. It is explicitly and implicitly understood by those skilled in the art that the embodiments described herein may be combined with other embodiments.

[0030] At present, due to the characteristics of organic light-emitting diodes themselves, problems such as brightness attenuation and afterimage may exist during the display process, resulting in uneven brightness of the picture display, affecting the viewing experience. Therefore, the present application proposes a display panel solution, in which a photoelectric detection module is separately constructed in the display panel to perform real-time detection of the picture display, and compensation is performed based on the detected brightness information to stabilize the uniformity of the picture brightness when the entire panel is displayed.

[0031] See also Figure 1 and Figure 2 As shown, Figure 1 It is a structural schematic diagram of a light-emitting unit and a detection unit of an embodiment of a display panel provided by the present application; Figure 2 It is a schematic diagram of the position structure of an embodiment of a display panel provided by the present application. Specifically, the display panel 100 includes: a light-emitting unit 20, a first detection unit 30, and a pixel unit 40; wherein a plurality of pixel units 40 are arranged in the display area (AA area) of the display panel 100; the light-emitting unit 20 is arranged in the non-display area (outside the AA area) of the display panel, and the organic light-emitting device 22 of the light-emitting unit 20 and the organic light-emitting device 22 of the pixel unit 40 have the same structure; the first detection unit 30 is arranged in the non-display area of ​​the display panel 100 and corresponds to the light-emitting unit 20, and the first detection unit 30 is configured to detect the first brightness information of the light-emitting unit 20, so as to perform signal compensation on the data signal of the pixel unit 40 through the change of the first brightness information.

[0032] Among them, the light-emitting unit 20 also includes a TFT device 21. The TFT thin film transistor (TFT, Thin Film Transistor) device is a field effect tube, which is used as an independent switch. According to the electrical signal of the data information, the pixel changes the condition quickly to make it turn on or off very quickly. It is the core circuit device process of the flat panel display drive circuit and the flat panel receiving sensor circuit, that is, it can form a driving electrode waveform by amplifying the external signal, and can also accept the external photoelectric converter to generate an electrical signal to become a sensor signal source processing unit. There are two major categories: TFT display drive backplane and TFT image sensor, and there are two technologies: CMOS (the driving part circuit is composed of n-MOS and p-MOS) and PMOS (the driving part circuit is composed of p-MOS).

[0033] Specifically, in one embodiment, the TFT device 21 includes: a first semiconductor layer 211, a second insulating layer 212, a gate layer 213, a dielectric layer 214 and a source and drain layer 215; in one embodiment, the first semiconductor layer 211 is indium gallium zinc oxide (IGZO for short), optionally, the material of the first semiconductor layer 211 may include but is not limited to α-Si (amorphous silicon), LTPS (low temperature polycrystalline silicon), a-Si:H (hydrogenated amorphous silicon), ITO (indium tin oxide) and other materials, which can be set according to different switching thresholds or usage requirements.

[0034] In one embodiment, the material of the first insulating layer 12 is SiOx (silicon oxide), wherein silicon monoxide is an inorganic compound and an incomplete oxide of silicon.

[0035] In one embodiment, the gate layer (gate) 213 material may include but is not limited to nickel, nickel-manganese alloys (such as NiMn3 and NiMn5), nickel-chromium alloys (such as NiCr9), and nickel-molybdenum-iron alloys (such as NiMo-20 and NiMo-25) or other suitable gate materials and combinations thereof.

[0036] In one embodiment, the dielectric layer 214 adopts the ILD process. The dielectric layer 214 is an electrical insulation layer between the silicon device and the metal layer and between the metal layers. The ILD process refers to the dielectric material formed between the device and the first layer of metal to form electrical isolation. The ILD dielectric layer can effectively isolate the metal interconnects and devices, reduce the parasitic capacitance between the metal and the substrate, and improve the parasitic field effect transistor formed by the metal crossing different regions. In one embodiment, the dielectric material of the ILD is a silicon oxide material. In other embodiments, the dielectric layer can be made by other processes. The materials that can be used for the dielectric layer include but are not limited to SIO2 (silicon dioxide), BPSG (boron phosphosilicate glass), PGS (phosphosilicate glass), Polymers, Si3N4 (silicon nitride), Aerogels, and low-k dielectrics.

[0037] In one embodiment, the source-drain layer 215 includes a source structure (source) and a drain structure (drain), and the material of the source-drain layer may include but is not limited to N-type semiconductor material or P-type semiconductor material, for example, for silicon and germanium semiconductor materials, N-type or P-type semiconductor materials formed by doping with Group V elements such as phosphorus, arsenic, and antimony.

[0038] Optionally, in one embodiment, if Figure 2As shown, the first detection units 30 are arranged on the outside of the display area, and the number is 6, which are respectively arranged at the four corners of the display area and the middle of the two long sides; wherein, the position layout of the first detection units 30 can adopt different design schemes and be set according to actual needs, and the number of the first detection units 30 can be set according to the actual use requirements or different design schemes.

[0039] Among them, in the general display production process, the color resistance layer generally uses pigments or dyes as colorants to obtain the three colors of red, green and blue. In one embodiment of the present application, the light-emitting unit 20 does not have a display function, but is used for detection by the first detection unit 30. Therefore, in order to increase the brightness of the light-emitting unit 20 and allow the first detection unit 30 to absorb more light, there is no RGB color resistance in the light-emitting unit 20 in the embodiment.

[0040] Optionally, in one embodiment, the first detection unit 30 includes a first electrode layer 31, a photosensitive layer 32 and a second electrode layer 33 which are stacked, and the photosensitive layer 32 is used to detect the brightness of the light-emitting unit 20 to generate a detection current between the first electrode layer 31 and the second electrode layer 33, and the detection current is used to indicate the brightness of the light-emitting unit 20.

[0041] Among them, the first detection unit 30 is arranged on the substrate 10a, and is manufactured in different steps of the same process as the light-emitting unit 20; in one embodiment, the first detection unit 30 is a photodetector, wherein the principle of the photodetector is that the conductivity of the irradiated material changes due to radiation, and the light signal is converted into an electrical signal, and it is mainly used for ray measurement and detection in the visible light or near-infrared band.

[0042] Optionally, in one embodiment, the photosensitive layer 32 is an amorphous silicon layer; the amorphous silicon (amorphous silicon α-Si) is also called amorphous silicon, which is a form of single silicon and is often used in the fields of photoelectric sensors, solar cells, etc.

[0043] Optionally, in one embodiment, the first electrode layer 31 of the first detection unit 30 is made of an LS metal layer, wherein the first electrode layer 31 and the first semiconductor layer 211 are made of the same material and are etched using a mask; in other embodiments, the first electrode layer 31 and the first semiconductor layer 211 may also be made of different materials, or may be etched separately using different manufacturing processes, and the material of the first electrode layer 31 may also include but is not limited to chromium, titanium, gold, silver, copper, aluminum, ITO, combinations thereof or other suitable conductive materials and combinations thereof, and may be set according to actual plans or requirements.

[0044] Optionally, in one embodiment, the organic light-emitting device 22 includes an anode layer 221, a light-emitting layer 222 and a cathode layer 223 arranged in a stacked manner, and the anode layer 221 is configured to be driven by a constant current; generally, the organic light-emitting device 22 emits light through carrier injection and recombination under the drive of an electric field. The basic principle is that the anode and cathode of the organic light-emitting device are driven by a certain voltage, so that electrons and holes are injected from the cathode and anode into the electron and hole transport layers respectively, and the electrons and holes migrate to the light-emitting layer 222 through the electron and hole transport layers respectively, and meet in the light-emitting layer 222. When the electrons enter the holes, they are released in the form of light energy; wherein the light-emitting layer 222 usually emits three primary colors of red, blue or green light when powered on, and presents a variety of color displays in different combinations. The light-emitting layer 222 may include HIL (Hole Injection Layer, hole injection layer), HTL (Hole Transfer Layer, hole transport layer), EML (Emitting Layer, emission layer) and ETL (Electron Transfer Layer) Layer, electron transfer layer); the materials of the anode layer 221 and the cathode layer 223 may include but are not limited to chromium, titanium, gold, silver, copper, aluminum, ITO, combinations thereof or other suitable conductive materials and combinations thereof, wherein the materials of the anode layer 221 and the cathode layer 223 may be the same or different, and the specific situation is set according to actual needs.

[0045] Optionally, in one embodiment, the light-emitting layer is a red light-emitting layer; in the above embodiment, the photosensitive material selected is amorphous silicon material, and amorphous silicon material is a near-infrared semiconductor, so in the embodiment, the light-emitting layer of the light-emitting unit 20 is set to a red light-emitting layer so that the first detection unit 30 can better receive the light brightness from the light-emitting unit 20.

[0046] Optionally, in one embodiment, the display panel 100 further includes a second detection unit 50, which is disposed in a non-display area of ​​the display panel 100 and is staggered with the light-emitting unit 20. The second detection unit 50 is configured to detect second brightness information of external natural light, so as to determine third brightness information of the light-emitting unit 20 according to the difference between the first brightness information and the second brightness information, and to perform signal compensation on the data signal of the pixel unit 40 according to the change of the third brightness information. The second detection unit 50 does not include the organic light-emitting device 22 in the light-emitting unit 20, but is a separate photoelectric detection device.

[0047] Optionally, in one embodiment, see Figure 3 and Figure 4 , Figure 3 is a schematic diagram of the position of an embodiment of a second detection unit provided by the present application; Figure 4: is a schematic diagram of the structure of an embodiment of the second detection unit provided by the present application. The second detection unit 50 does not contain an organic light-emitting device 22 or makes the organic light-emitting device 22 non-luminescent, and is used for comparison with the first detection unit; the second detection unit 50 is used to receive external ambient light, and compare the brightness information collected according to the external ambient light with the brightness information of the light-emitting unit 20 collected by the first detection unit 30, wherein the brightness information collected by the first detection unit 30 may include the brightness information from the light-emitting unit 20 and the brightness information from the external ambient light, while the second detection unit 50 does not contain the brightness information of the light-emitting unit 20, but only the brightness information from the external ambient light, The brightness information detected by the first detection unit 30 is compared with the brightness information detected by the second detection unit 50 to eliminate the interference of the external ambient light on the first detection unit 30, so as to ensure the detection accuracy of the first detection unit 30; in one embodiment, as shown in the figure, the number of the second detection units 50 is set to 6, and they are arranged on the adjacent right side of the first detection unit 30, wherein the position layout of the second detection unit 50 can adopt different design schemes and be set according to actual needs, and the number of the second detection units 50 can also be set according to the number of the first detection units 30 or the actual use requirements.

[0048] To solve the above problems, the present application also provides a method for manufacturing a display panel. Figure 5 and Figure 6a-Figure 6i , Figure 5 It is a schematic flow chart of the steps of a method for manufacturing a display panel according to an embodiment of the present application. Figure 6a-Figure 6i 1 is a schematic diagram of a method for manufacturing a display panel according to an embodiment of the present application. The method for manufacturing a display panel comprises the following steps:

[0049] Step S10: providing a substrate;

[0050] like Figure 6a As shown, the substrate 10a plays a supporting role in the entire display panel and is used to carry various components and materials. There are many ways to classify the substrate. According to the material, it can be divided into plastic substrates, ceramic substrates, metal substrates, etc.; according to the packaging method, it can be divided into wire-bonded substrates and flip-chip substrates; according to the number of layers, it can be divided into single-sided boards, double-sided boards, multi-layer boards, etc.

[0051] In one embodiment, the substrate is made of a glass substrate, which is generally used as a carrier. In another embodiment, the substrate is made of a flexible substrate, which uses a flexible PI (polyimide) film as a substrate.

[0052] In one embodiment, the substrate 10a is a glass substrate and a polarizing layer 10b is disposed under the substrate 10a.

[0053] Step S20: forming a TFT device and a first detection unit on the substrate, wherein the first detection unit is located in the non-display area;

[0054] See also Figure 7 As shown, Figure 7 yes Figure 5 Schematic diagram of the sub-step flow chart of step S20.

[0055] Step S21: forming a first conductive layer on a substrate.

[0056] like Figure 6a As shown, a first conductive layer is formed on the substrate 10a. The material of the first conductive layer is the same as described in the above structure and will not be repeated here. In one embodiment, the first conductive layer can be formed by methods including but not limited to PVD (physical vapor deposition), CVD (chemical vapor deposition), ALD (atomic layer deposition), ALD deposition materials, etc.

[0057] Step S22: etching the first conductive layer and the photosensitive layer to form a light shielding layer and a first electrode layer.

[0058] like Figure 6b As shown, the first conductive layer is etched using a mask to obtain a light-shielding layer 11a and a first electrode layer 31; using a mask for etching to form the light-shielding layer 11a and the first electrode layer 31 will not increase the number of masks required for the etching process, and can reduce the corresponding process steps, reduce the required material cost, improve the efficiency of panel manufacturing, and facilitate production manufacturing.

[0059] The mask is also commonly called a photomask, photomask, or photolithography mask. It is the carrier of the design pattern in the semiconductor chip photolithography process. Through photolithography and etching, the pattern is transferred to the silicon wafer. Masks usually choose different glass substrates according to different needs. Generally, quartz glass with low thermal expansion coefficient, low sodium content, high chemical stability, and high light transmittance is selected as the mainstream. An opaque chrome film with a thickness of about 100nm and chromium oxide with a thickness of about 20nm are plated on it to reduce light reflection.

[0060] In other embodiments, etching can also be performed in the form of photoresist, in which the photoresist is a pattern transfer medium that transfers the mask pattern to the substrate by utilizing the different solubility after light reaction. It is currently widely used in the processing and production of fine pattern circuits in the optoelectronic information industry and is a key material in the field of electronic manufacturing. Photoresist is generally composed of a photosensitive agent (photoinitiator), a photosensitive resin, a solvent and an auxiliary agent, wherein the photoinitiator is the core component and plays a decisive role in the sensitivity and resolution of the photoresist. Photoresist can be divided into positive photoresist and negative photoresist according to different chemical reaction principles.

[0061] Step S23: forming a photosensitive layer on the first electrode layer.

[0062] like Figure 6c As shown, the material of the photosensitive layer 32 includes but is not limited to amorphous silicon, mercury cadmium telluride, indium antimonide and the like; in one embodiment, the photosensitive layer 32 is made of amorphous silicon.

[0063] Step S24: forming a first insulating layer on the light shielding layer.

[0064] like Figure 6d As shown, the material and formation process of the first insulating layer are the same as those described above and will not be repeated here.

[0065] Step S25: forming a semiconductor layer on the first insulating layer and the photosensitive layer;

[0066] Step S26: etching the semiconductor layer to form a first semiconductor layer and a second semiconductor layer.

[0067] like Figure 6e and Figure 6f As shown, the semiconductor layer is also etched through a mask to form the first semiconductor and the second semiconductor. The process here can ensure that the number of masks required for the formation of the first detection unit 30 will not increase, and can reduce the corresponding process steps, reduce the required material costs, improve the efficiency of panel manufacturing, and facilitate production manufacturing.

[0068] Step S27: Processing the second semiconductor layer to form a second electrode layer. The first electrode layer, the photosensitive layer and the second electrode layer form a first detection unit.

[0069] like Figure 6g As shown, Figure 6g The structure on the right constitutes the first detection unit.

[0070] In one embodiment, the second semiconductor is oxidized or doped to be converted into a conductor, so as to be used as the second electrode of the first detection unit 30; for example, IGZO (indium gallium zinc oxide) is oxidized to be conductive.

[0071] Step S28: forming a second insulating layer, a gate layer, a dielectric layer and a source-drain layer in sequence on the first semiconductor layer, and the first semiconductor layer, the second insulating layer, the gate layer, the dielectric layer and the source-drain layer form a TFT device.

[0072] like Figure 6gAs shown, the TFT device 21 is an active driving element, which can also be understood as an active driving technology using TFT elements. OLED driven by TFT is generally called AMOLED; LCD driven by TFT is generally called TFT-LCD, which can also be called AMLCD.

[0073] The materials used for the first semiconductor layer 211 , the second insulating layer 212 , the gate layer 213 , the dielectric layer 214 and the source / drain layer 215 described herein are the same as those described in the above structure, and are not described in detail herein.

[0074] Step S30: forming an organic light-emitting device, at least a portion of the organic light-emitting device corresponds to the first detection unit.

[0075] See also Figure 6g to Figure 6i As shown, Figure 6g to Figure 6i Schematic diagram of the structure of the organic light emitting device 22 .

[0076] Among them, the TFT device 21 and the organic light-emitting device 22 located in the display area form a pixel unit 40, and the TFT device 21 and the organic light-emitting device 22 located in the non-display area form a light-emitting unit 20. The first detection unit 30 is configured to detect the first brightness information of the light-emitting unit 20 so as to perform signal compensation on the data signal of the pixel unit 40 according to the change of the first brightness information.

[0077] See also Figure 8 As shown, Figure 8 yes Figure 5 Schematic diagram of the sub-step flow chart of step S30.

[0078] Step S31: forming a passivation layer on the TFT device and the first detection unit.

[0079] like Figure 6g As shown, optionally, in one embodiment, silicon nitride is used as the passivation layer material. Optionally, the passivation layer can be encapsulated using other passivation layer materials or other passivation layer encapsulation technologies, for example, high-density polyethylene material (HDPE) and AL-LI alloy are encapsulated using a three-structure passivation layer encapsulation technology.

[0080] Among them, silicon nitride films prepared by PECVD have been widely used in silicon integrated circuit processes as passivation layers. Due to the compactness of silicon nitride, it can effectively block the intrusion of water vapor and oxygen, so it is often used in the packaging of OLED devices.

[0081] Step S32: forming a protection layer on the passivation layer.

[0082] like Figure 6hAs shown, optionally, in one embodiment, after the preparation of the TFT device 21 and the first detection unit 30 is completed, the entire structure is encapsulated and protected. In this embodiment, a transparent photoresist is used as a packaging protection layer. Since the light-emitting unit and the first detection unit 30 require light emission and brightness detection, the packaging protection layer can also be encapsulated and protected by other transparent protective layers that meet the conditions.

[0083] Step S33: forming an organic light-emitting device on the protective layer.

[0084] like Figure 6h As shown, the organic light-emitting device 22 also includes a pixel defining layer 16. The setting of the pixel defining layer 16 makes the formation of the organic light-emitting layer more convenient and avoids the color mixing of the organic light-emitting layers of adjacent pixel units, providing a highly controllable and simple way to set the area, shape, arrangement, etc. of the pixel unit.

[0085] Among them, the organic light-emitting device 22 includes an anode layer 221, a light-emitting layer 222 and a cathode layer 223 arranged in a stacked manner, and the anode layer 221 is configured to be driven by a constant current. Among them, the material of the light-emitting layer 222 is the most important material in the OLED device. Generally, the light-emitting material should have a high luminous efficiency and good electron or hole transport performance. According to the molecular structure of the compound, the organic light-emitting materials are generally divided into two categories: polymers and small molecule organic compounds. Specifically, polymers are usually conductive conjugated polymers or semiconductor conjugated polymers, which can be formed into films by spin coating, are simple to make, and have low cost, but their purity is not easy to improve, and they are inferior to small molecule organic compounds in terms of durability, brightness and color; small molecule organic compounds can be formed into films by vacuum evaporation, and are divided into organic small molecule light-emitting materials and complex light-emitting materials according to their molecular structure. Organic small molecule light-emitting materials are mainly organic dyes, which have the advantages of strong chemical modification, wide selection range, easy purification, high quantum efficiency, and can produce various color emission peaks such as red, green, blue, and yellow, but most of them have concentration quenching problems in the solid state. The complex luminescent material is between organic and inorganic materials, and has both the high fluorescence quantum efficiency of organic materials and the high stability of inorganic materials. It is considered to be a type of luminescent material with great application prospects. Among them, the anode layer 221 material is mainly used as the anode of the device, and its work function is required to be as high as possible to improve the hole injection efficiency; and the cathode layer 223 material is mainly used as the cathode of the device. The lower the metal work function of the cathode material, the easier the electron injection, the higher the luminescent efficiency, the less Joule heat generated during operation, and the device life will be greatly improved; the materials that can be used for the anode layer 221 and the cathode layer 223 are the same as those described in the above structure, and will not be repeated here.

[0086] like Figure 6iAs shown, optionally, in one embodiment, the entire panel is packaged after the process is completed, for example, a first packaging layer 17 is formed on the organic light-emitting device 22 by thin film packaging, and a second packaging layer 18 is formed on the first packaging layer by metal foil.

[0087] Among them, traditional OLED packaging technology is to encapsulate electrodes and various organic functional layers on a rigid substrate. Generally, a cover is added to the device with a desiccant, and then the substrate and the cover are combined with sealants such as epoxy resin; thin film packaging is the current mainstream packaging technology. Thin film packaging materials are mainly divided into inorganic packaging materials, organic packaging materials and inorganic-organic composite packaging materials. Among them, inorganic-organic composite packaging materials have the advantages of good water and oxygen barrier properties of inorganic packaging materials and good film-forming properties of organic packaging materials, and are the mainstream choice for OLED packaging materials.

[0088] To solve the above problems, the present application also provides a display device, see Fig. 9 , Fig. 9 1 is a schematic diagram of a display device according to an embodiment of the present application. The display device 300 includes a housing 200 and a display panel 100, wherein the display panel 100 is any display panel 100 described in the above embodiments or a display panel 100 manufactured by the above manufacturing method, so as to provide a stable picture output to the display device 200 through the display panel 100.

[0089] The embodiments of the present application are introduced in detail above. Specific examples are used in this article to illustrate the principles and implementation methods of the present application. The description of the above embodiments is only used to help understand the method and core idea of ​​the present application. At the same time, for technical personnel in this field, according to the idea of ​​the present application, there will be changes in the specific implementation method and application scope. In summary, the content of this specification should not be understood as a limitation on the present application.

Claims

1. A display panel, characterized in that: The display panel comprises: A plurality of pixel units are arranged in a display area of ​​the display panel; A light-emitting unit, disposed in a non-display area of ​​the display panel, the light-emitting unit comprising a TFT device and an organic light-emitting device, the organic light-emitting device of the light-emitting unit having the same structure as the organic light-emitting device of the pixel unit; a first detection unit, disposed in a non-display area of ​​the display panel and corresponding to the organic light-emitting device of the light-emitting unit, wherein the first detection unit is configured to detect first brightness information of the organic light-emitting device of the light-emitting unit, so as to perform signal compensation on the data signal of the pixel unit according to a change in the first brightness information; Among them, the TFT device and the first detection unit are arranged on a substrate, and the substrate and the TFT device also include a shading layer close to the side of the substrate and a first insulating layer close to the side of the TFT device. The TFT device includes a first semiconductor layer, a second insulating layer, a gate layer, a dielectric layer and a source-drain layer arranged in a stacked manner. The first detection unit includes a first electrode layer, a photosensitive layer and a second electrode layer arranged in a stacked manner. The shading layer and the first electrode layer are formed by adopting the same mask process, and the first semiconductor layer and the second electrode layer are formed by adopting the same mask process.

2. The display panel according to claim 1, characterized in that: The photosensitive layer is used to detect the brightness of the light-emitting unit to generate a detection current between the first electrode layer and the second electrode layer, and the detection current is used to represent the brightness of the light-emitting unit.

3. The display panel according to claim 2, characterized in that: The photosensitive layer is an amorphous silicon layer.

4. The display panel according to claim 1, characterized in that: The organic light emitting device comprises an anode layer, a light emitting layer and a cathode layer which are stacked, and the anode layer is configured to be driven by a constant current.

5. The display panel according to claim 4, characterized in that: The light-emitting layer is a red light-emitting layer.

6. The display panel according to claim 1, characterized in that: The display panel also includes a second detection unit, which is arranged in a non-display area of ​​the display panel and is offset from the light-emitting unit. The second detection unit is configured to detect second brightness information of external natural light, so as to determine third brightness information of the light-emitting unit according to the difference between the first brightness information and the second brightness information, and perform signal compensation on the data signal of the pixel unit according to the change of the third brightness information.

7. A method for manufacturing a display panel, characterized in that: The manufacturing method of the display panel includes: providing a substrate; forming a first conductive layer on the substrate; Etching the first conductive layer to form a light shielding layer and a first electrode layer; forming a photosensitive layer on the first electrode layer; forming a first insulating layer on the light shielding layer; forming a semiconductor layer on the first insulating layer and the photosensitive layer; Etching the semiconductor layer to form a first semiconductor layer and a second semiconductor layer; The second semiconductor layer is processed to form a second electrode layer, the first electrode layer, the photosensitive layer and the second electrode layer form a first detection unit, and the first detection unit is located in a non-display area; forming a second insulating layer, a gate layer, a dielectric layer and a source-drain layer in sequence on the first semiconductor layer, wherein the first semiconductor layer, the second insulating layer, the gate layer, the dielectric layer and the source-drain layer form a TFT device; forming an organic light-emitting device, at least a portion of which corresponds to the first detection unit; Among them, the TFT device and the organic light-emitting device located in the display area form a pixel unit, and the TFT device and the organic light-emitting device located in the non-display area form a light-emitting unit, and the first detection unit is configured to detect first brightness information of the light-emitting unit so as to perform signal compensation on the data signal of the pixel unit according to the change of the first brightness information.

8. The method for manufacturing a display panel according to claim 7, characterized in that: The forming of the organic light emitting device comprises: forming a passivation layer on the TFT device and the first detection unit; forming a protective layer on the passivation layer; An organic light emitting device is formed on the protective layer.

9. A display device, characterized in that: The display device comprises a housing and a display panel, wherein the display panel is the display panel as described in any one of claims 1 to 6, or comprises a display panel manufactured by the method for manufacturing a display panel as described in any one of claims 7 to 8.

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