Display panel, preparation method thereof and display device

Abstract

The application provides a display panel and a preparation method therefor, and a display device. The display panel comprises a substrate, a pixel definition layer arranged on the light-emitting side of the substrate, the pixel definition layer defining a plurality of pixel regions for arranging sub-pixels, and a light-emitting functional layer arranged on the side of the pixel definition layer away from the substrate, the light-emitting functional layer comprising a carrier layer continuously covering the pixel definition layer and the plurality of pixel regions. The carrier layer comprises a first region and a second region other than the first region, the first region being in orthographic projection on the pixel definition layer, and the carrier mobility of the first region being less than that of the second region. The display panel and the preparation method therefor, and the display device provided by the application prevent the formation of crosstalk current between adjacent sub-pixels of the display panel when the carrier migrates from one of the second regions of the carrier layer to an adjacent second region.

Description

Technical Field

[0001] This application relates to the field of display technology, and in particular to a display panel, a method for manufacturing the same, and a display device. Background Technology

[0002] With the continuous development of display technology, LED display devices can not only meet the needs of small-sized displays, but also be applied in the fields of high-resolution (PPI) and large-sized displays. LED display devices can be implemented as televisions, video players, personal computers (PCs), home theaters, smartphones, virtual reality devices (AR / VR), and so on.

[0003] Meanwhile, LED display devices have excellent display characteristics, such as high resolution, high brightness, rich colors, low driving voltage, fast response speed, and low power consumption, giving them broad development prospects. Summary of the Invention

[0004] In view of this, the purpose of this application is to provide a display panel, a method for manufacturing the same, and a display device.

[0005] To achieve the above objectives, a first aspect of this application provides a display panel, comprising: a substrate; a pixel definition layer disposed on the light-emitting side of the substrate, the pixel definition layer defining a plurality of pixel regions for setting sub-pixels; and a light-emitting functional layer disposed on the side of the pixel definition layer away from the substrate, the light-emitting functional layer including a carrier layer continuously covering the pixel definition layer and the plurality of pixel regions; the carrier layer including a first region and a second region other than the first region, the orthographic projection of the first region onto the pixel definition layer being located within the pixel definition layer, and the carrier mobility of the first region being less than the carrier mobility of the second region.

[0006] Optionally, the first region is made of a first material, which is a material formed by doping or photo-irradiation modification of the material used to form the second region.

[0007] Optionally, the charge carrier layer includes at least one of a hole injection layer, a hole transport layer, an electron injection layer, an electron transport layer, and a charge generation layer.

[0008] Optionally, the display panel further includes: an encapsulation layer, the encapsulation layer being disposed on the side of the light-emitting functional layer away from the substrate, the surface of the encapsulation layer away from the substrate having a first thinning groove, the orthogonal projection of the first thinning groove on the charge carrier layer coinciding with the first region.

[0009] Optionally, the minimum distance between the bottom of the first thinning groove and the surface of the encapsulation layer facing the light-emitting functional layer is greater than 1000 angstroms.

[0010] Optionally, the display panel further includes an etch barrier layer disposed on the side of the light-emitting functional layer away from the substrate.

[0011] Optionally, the encapsulation layer includes a plurality of stacked structural layers, one of which is the etching barrier layer.

[0012] Optionally, the encapsulation layer includes two silicon nitride layers respectively disposed on both sides of the etch barrier layer.

[0013] Optionally, the encapsulation layer further includes a silicon oxide layer disposed on the side of the silicon nitride layer away from the etch barrier layer.

[0014] Optionally, the etching barrier layer is an aluminum oxide layer.

[0015] Optionally, the display panel further includes: an anode layer disposed between the pixel definition layer and the substrate, the anode layer including a plurality of anodes corresponding to and spaced apart from the pixel regions, the orthographic projection of each of the plurality of pixel regions onto the anode layer at least partially overlapping the corresponding anode; the pixel definition layer including a first protrusion structure disposed between two adjacent anodes, the first protrusion structure covering the edge of the anode.

[0016] Optionally, the display panel further includes an encapsulation layer, the encapsulation layer being provided with a first thinning groove; the cross-sectional shape of the first protrusion structure is polygonal, and the cross-sectional width of the first thinning groove is smaller than the top width of the polygon.

[0017] Optionally, the pixel definition layer is made of an inorganic material, the slope angle of the first protrusion structure is greater than 45°, and the distance between the top of the first protrusion structure and the surface of the anode layer facing the pixel definition layer is less than or equal to 1000 angstroms.

[0018] Optionally, the pixel definition layer is made of an organic material, the slope angle of the first protrusion structure is less than 45°, and the distance between the top of the first protrusion structure and the surface of the anode layer facing the pixel definition layer is greater than 1000 angstroms.

[0019] Optionally, along the width direction of the first protrusion structure, a second protrusion structure is provided on both sides of the top edge of the first protrusion structure, and a second thinning groove is formed between two adjacent second protrusion structures. The thickness of the light-emitting functional layer located in the second thinning groove is less than the thickness of the light-emitting functional layer located outside the second thinning groove.

[0020] Optionally, the display panel further includes an encapsulation layer, the encapsulation layer having a first thinning groove; the orthographic projection of the second thinning groove on the encapsulation layer is located within the first thinning groove.

[0021] Optionally, the slope angle of the sidewall of the second protrusion structure facing the pixel region is smaller than the slope angle of the sidewall of the second protrusion structure facing the second thinning groove.

[0022] Optionally, the cross-sectional width of the second thinning groove is smaller than the gap width between two adjacent anodes.

[0023] Optionally, the light-emitting functional layer can be an organic light-emitting functional layer or an inorganic light-emitting functional layer.

[0024] Based on the same inventive concept, the second aspect of this application also provides a display device, including a display panel as described in the first aspect.

[0025] Based on the same inventive concept, a third aspect of this application also provides a method for manufacturing a display panel, used to manufacture the display panel as described in the first aspect, the method comprising:

[0026] A pixel definition layer is formed on the light-emitting side of the provided substrate; wherein the pixel definition layer defines a plurality of pixel regions;

[0027] A light-emitting functional layer is formed on the side of the pixel definition layer away from the substrate, wherein the light-emitting functional layer includes a carrier layer that continuously covers the pixel definition layer and the plurality of pixel regions;

[0028] The current carrier sublayer is divided into a first region to be processed and a second region other than the first region to be processed; wherein the orthographic projection of the first region to be processed onto the pixel definition layer is located within the pixel definition layer.

[0029] The first region to be processed in the carrier layer is modified to form a first region; wherein the carrier mobility of the first region is less than that of the second region.

[0030] Optionally, the modification treatment of the charge carrier sublayer in the first region to be processed includes:

[0031] The carrier layer of the first region to be treated is modified by doping or irradiation.

[0032] Optionally, before modifying the charge carrier sublayer of the first region to be processed, the method further includes:

[0033] Form an encapsulation layer covering the light-emitting functional layer;

[0034] A first thinning groove is formed on the surface of the encapsulation layer away from the substrate; wherein the orthographic projection of the first thinning groove on the charge carrier layer coincides with the first region to be processed.

[0035] Optionally, after forming the first region, the method further includes:

[0036] Fill the first thinning groove.

[0037] As can be seen from the above, the display panel, its fabrication method, and display device provided in this application divide the carrier layer in the light-emitting functional layer into a first region corresponding to the pixel definition layer and a second region corresponding to the pixel region, and the carrier mobility of the first region is less than that of the second region. When carriers migrate from one of the second regions of the carrier layer to an adjacent second region, the first region will hinder the migration of carriers, thereby preventing crosstalk current from forming between adjacent sub-pixels of the display panel. Attached Figure Description

[0038] To more clearly illustrate the technical solutions in this application or related technologies, the drawings used in the description of the embodiments or related technologies will be briefly introduced below. Obviously, the drawings described below are only embodiments of this application. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.

[0039] Figure 1 This is a schematic diagram of the structure of an OLED display panel with a dual-stack structure according to an embodiment of this application;

[0040] Figure 2 This is a schematic diagram of the structure of a WOLED display panel according to an embodiment of this application;

[0041] Figure 3 This is a circuit diagram of a WOLED display panel according to an embodiment of this application;

[0042] Figure 4 This is a cross-sectional view of a pixel in the display panel at position AA, according to an embodiment of this application.

[0043] Figure 5 This is a schematic diagram of the circuit principle that causes crosstalk;

[0044] Figure 6 This is a graph showing the relationship between voltage and current density for each sub-pixel when crosstalk occurs.

[0045] Figure 7 This is a schematic diagram of the structure of a display panel according to an embodiment of this application;

[0046] Figure 8This is a schematic diagram of another structure of the display panel according to an embodiment of this application;

[0047] Figure 9 This is a schematic diagram of another structure of the display panel according to an embodiment of this application;

[0048] Figure 10 for Figure 9 An enlarged schematic diagram of section D in the middle;

[0049] Figure 11 This is a schematic flowchart of a display panel manufacturing method according to an embodiment of this application. Detailed Implementation

[0050] To make the objectives, technical solutions, and advantages of this application clearer, the following detailed description is provided in conjunction with specific embodiments and the accompanying drawings.

[0051] It should be noted that, unless otherwise specifically stated, the relative arrangement, numerical expressions, and values ​​of the components described in these embodiments do not limit the scope of this application.

[0052] At the same time, it should be understood that, for ease of description, the dimensions of the various parts shown in the accompanying drawings are not drawn according to actual scale.

[0053] The following description of at least one exemplary embodiment is merely illustrative and is in no way intended to limit the scope of this application and its application or use.

[0054] It should be noted that, unless otherwise defined, the technical or scientific terms used in the embodiments of this application should have the ordinary meaning understood by one of ordinary skill in the art to which this application pertains. The terms "first," "second," and similar terms used in the embodiments of this application do not indicate any order, quantity, or importance, but are merely used to distinguish different components. Terms such as "comprising" or "including" mean that the element or object preceding the word encompasses the elements or objects listed after the word and their equivalents, without excluding other elements or objects. Terms such as "connected" or "linked" are not limited to physical or mechanical connections, but can include electrical connections, whether direct or indirect. Terms such as "upper," "lower," "left," and "right" are only used to indicate relative positional relationships; when the absolute position of the described object changes, the relative positional relationship may also change accordingly.

[0055] In some embodiments, for LED display products with smaller display sizes, a dual-stack tandem OLED structure can be used.

[0056] Figure 1 A schematic diagram of a dual-stack OLED display panel structure is shown.

[0057] Two structural layers 2 for emitting light are stacked on the light-emitting side of the anode layer 1.

[0058] The first structural layer group 2-1 is located near the anode layer 1. It includes a first structural layer 201 disposed on the light-emitting side of the anode layer 1. The first structural layer 201 includes a hole injection layer 26 (HIL) and a hole transport layer 27 (HTL). An electron blocking layer 202 (EBL) is disposed on the side of the first structural layer 201 away from the anode layer 1. The electron blocking layer 202 includes multiple electron blocking patterns 2021. A light-emitting layer 203 (EML) is disposed on the side of the electron blocking layer 202 away from the first structural layer 201. The light-emitting layer 203 includes multiple light-emitting patterns 2031 for forming sub-pixels 3101 of different colors. In this embodiment, the light-emitting layer 203 may include a B light-emitting pattern 2031 capable of emitting blue light, a G light-emitting pattern 2031 capable of emitting green light, and an R light-emitting pattern 2031 capable of emitting red light, and the distribution of the three light-emitting patterns 2031 adopts an RGB-SBS structure. The light-emitting layer 203 includes a plurality of light-emitting patterns 2031 that correspond one-to-one with a plurality of electron-blocking patterns 2021. For example, each electron-blocking pattern 2021 may have a different thickness depending on the corresponding light-emitting pattern 2031. Specifically, the electron-blocking pattern 2021 corresponding to the B light-emitting pattern 2031 is thinner, the electron-blocking pattern 2021 corresponding to the R light-emitting pattern 2031 is thicker, and the electron-blocking pattern 2021 corresponding to the G light-emitting pattern 2031 has a thickness between the two.

[0059] The first structural layer group 2-1 also includes a hole blocking layer 204 (HBL) covering the light-emitting layer 203. An electron transport layer 205 (ETL) is disposed on the side of the hole blocking layer 204 away from the light-emitting layer 203.

[0060] A charge generation layer 3 (CGL) is disposed on the side of the first structural layer group 2-1 away from the anode layer 1. A second structural layer group 2-2 is disposed on the side of the charge generation layer 3 away from the anode layer 1, and the structure of the second structural layer group 2-2 can be the same as that of the first structural layer group 2-1. An electron injection layer 4 (EIL) and a cathode layer 5 (CTD) are stacked on the side of the second structural layer group 2-2 away from the charge generation layer 3.

[0061] In the dual-stack OLED display panel of this embodiment, each sub-pixel can be controlled individually to control the light intensity of different sub-pixels of different colors according to display requirements, thereby achieving full-color display.

[0062] In the dual-stack OLED display panel of this embodiment, there are two structural layer groups 2 for light emission, and each structural layer group 2 includes a light-emitting layer 203, that is, the whole has two stacked light-emitting layers 203. Compared with the single-stack structure display panel, the former has twice the number of light-emitting layers 203 and the former has four times the lifespan.

[0063] In some embodiments, for high-resolution and large-size display products, fine mask (FMM) is used in the manufacturing process of the display panel. In order to adapt to the process limitations of the fine mask itself, the display panel can adopt a WOLED structure.

[0064] Figure 2 A schematic diagram of the structure of a WOLED display panel is shown.

[0065] An anode layer 1 is disposed on the light-emitting side of the backplate 25 (BP), and the anode layer 1 includes multiple anodes 101. On the side of the anode layer 1 away from the backplate, along the direction away from the anode layer 1, a hole injection layer 26, a hole transport layer 27, a blue fluorescent light-emitting layer 21 (FL Blue EML), an electron transport layer 205, a charge generation layer 3, a hole transport layer 27, a red-green phosphorescent light-emitting layer 22 (Ph.RG EML), an electron transport layer 205, an electron injection layer 4, a cathode layer 5 (Cathode), a thin film encapsulation layer 23 (TFE), and a color filter layer 24 (CF) are stacked in sequence.

[0066] The color filter layer 24 includes a plurality of color blocks 2401 corresponding one-to-one with a plurality of anodes 101. In this embodiment, the plurality of color blocks 2041 include an R color block 2401 that can transmit red light, a G color block 2401 that can transmit green light, and a B color block 2401 that can transmit blue light.

[0067] like Figure 3 A circuit diagram of a WOLED display panel is shown, where node a is the cathode and node b is the anode. The diagram shows the blue fluorescent light-emitting layer 21 (…). Figure 3 The blue fluorescence and red-green phosphorescent layer emitted by EL1 in the middle Figure 3 The red and green phosphorescence emitted by EL2)22 passes through the charge generation layer ( Figure 3 The CGL)3 in the middle is connected in series to form white light, and then combined with the color filter layer 24 to achieve full-color display.

[0068] Of course, the above example of blue fluorescence and red-green phosphorescence being tandemly connected to form white light is merely illustrative and not intended to limit the scope. For instance, white light can also be formed by tandemly connecting blue fluorescence and yellow phosphorescence.

[0069] In the display panels of the two embodiments described above, there are hole injection layer 26, hole transport layer 27, electron injection layer 4, electron transport layer 205 and charge generation layer 3. Charge carriers can migrate in these structural layers, so these structural layers can be called charge carrier layer 4301 (or charge connection layer).

[0070] Depend on Figure 1 and Figure 2 It can be understood that the carrier layer can be a structural layer that covers all sub-pixels in the display panel (in a WOLED display panel, each color resist block 2401 and its corresponding light-emitting device can form a sub-pixel). When carriers migrate in the carrier layer, although most of them migrate to the light-emitting layer 203, a small portion still migrates laterally to adjacent sub-pixels. This small portion of carrier migration will generate crosstalk current in the carrier layer.

[0071] Figure 4 A cross-sectional view of pixel 31 at position AA is shown in the display panel. This is to highlight the direction of the crosstalk current. Figure 4 The structural layers of the display panel have been simplified.

[0072] exist Figure 4 In the lower cross-sectional view, a barrier 33 for forming the pixel definition layer 42 is provided in the middle, corresponding to the area between the red sub-pixel 3101 and the blue sub-pixel 3101 at position AA. The left side corresponds to the red sub-pixel 3101 at position AA, and the right side corresponds to the blue sub-pixel 3101 at position AA.

[0073] The anode 101 of the red sub-pixel is partially covered on the left side of the barrier 33, and the anode 101 of the blue sub-pixel is partially covered on the right side of the barrier 33. Both anodes 101 are connected to the pixel control circuit. The layer covering the two anodes 101 and the barrier 33 is the hole injection layer 26, and the layer located on the side of the hole injection layer 26 away from the anodes 101 is the hole transport layer 27. Figure 4 The red luminescent pattern 2031 covering the hole transport layer 27 on the left side of the figure, and the blue luminescent pattern 2031 covering the hole transport layer 27 on the right side of the figure. The second structural layer 32, which includes a cathode layer and an electron transport layer, covers both luminescent patterns 2031 and part of the hole transport layer 27.

[0074] When the blue sub-pixel 3101 needs to emit light while the red sub-pixel 3101 does not, ideally, charge carriers will enter the blue emitting pattern 2031 from the hole injection layer 26 via the hole transport layer 27 (e.g., Figure 4 (As shown by the hollow arrow). However, in reality, some charge carriers will cross the barrier 33 and enter the red sub-pixel 3101, forming a crosstalk current. This crosstalk current can move to the red luminous pattern 2031 (as shown by the hollow arrow). Figure 4 (As shown by the dashed arrow). Meanwhile, since the cathode layer 5 is also a single, continuous layer, under the influence of crosstalk current, not only will the blue sub-pixel 3101 emit light, but the red sub-pixel 3101 will also emit light, causing display defects.

[0075] Figure 5 The above process is illustrated in the form of a circuit diagram. In the diagram, position d represents the anode of the blue sub-pixel, and position c represents the common cathode. The light-emitting element in the middle is used to form the blue sub-pixel, the light-emitting element on the left is used to form the red sub-pixel, and the light-emitting element on the right is used to form the green sub-pixel. When the blue sub-pixel emits light, the red and green sub-pixels will also emit light under the influence of crosstalk current.

[0076] Figure 6 This diagram shows the current (crosstalk current) measured at the anodes of the red and green sub-pixels when the blue sub-pixel is lit. The horizontal axis represents voltage (V), and the vertical axis represents current density (mA / cm²). 2 It can be seen that as the voltage increases, current can be measured at the anode of both the red and green sub-pixels, and this current causes crosstalk.

[0077] The applicant discovered through research that since the lateral migration of charge carriers in the charge carrier layer can generate crosstalk currents, then hindering the migration of charge carriers between adjacent sub-pixels in the charge carrier layer can at least partially prevent the formation of crosstalk currents and reduce display defects caused by crosstalk.

[0078] In view of this, such as Figure 7In some embodiments, a display panel is proposed, comprising: a substrate 41; a pixel definition layer 42 disposed on the light-emitting side of the substrate 41, the pixel definition layer 42 defining a plurality of pixel regions for setting sub-pixels 3101; and a light-emitting functional layer 43 disposed on the side of the pixel definition layer 42 away from the substrate 41, the light-emitting functional layer 43 including a carrier layer 4301 continuously covering the pixel definition layer 42 and the plurality of pixel regions; the carrier layer 4301 includes a first region 44 and a second region 45 excluding the first region 44, the orthographic projection of the first region 44 onto the pixel definition layer 42 is located within the pixel definition layer 42, and the carrier mobility of the first region 44 is less than the carrier mobility of the second region 45.

[0079] For example, the light-emitting functional layer 43 is a structural layer with light-emitting function, which may include a hole injection layer 26, a hole transport layer 27, a light-emitting layer 203, an electron transport layer 205 and an electron injection layer 4; or, the light-emitting functional layer 43 may include a structural layer between the anode layer 1 and the cathode layer 5 in the dual-stack structure display panel in the above embodiment; or the light-emitting functional layer 43 may include a structural layer between the anode layer 1 and the cathode layer 5 in the WOLED display panel.

[0080] In the carrier layer 4301, to make the carrier mobility of the first region 44 lower than that of the second region 45, different materials can be used to form the first region 44 and the second region 45 respectively. That is, a material with lower carrier mobility can be used to form the first region 44 of the carrier layer 4301, and a material with higher carrier mobility can be used to form the second region 45 of the carrier layer 4301. Alternatively, the entire carrier layer 4301 can be formed using the same material first, and the electrical properties of the first region 44 can be changed through local modification treatment or other processes to reduce the carrier mobility of the first region 44.

[0081] The current carrier layer 4301 covers the pixel definition layer 42 and the entire pixel region. The position of the first region 44 in the current carrier layer 4301 corresponds to the position of the pixel definition layer 42; for example, the orthographic projection of the first region 44 onto the pixel definition layer 42 lies within the pixel definition layer 42. Similarly, the position of the second region 45 in the current carrier layer 4301, excluding the first region 44, can correspond to the position of the pixel region; for example, the orthographic projection of the pixel region onto the current carrier layer 4301 lies within the second region 45.

[0082] When charge carriers migrate within a pixel region, their migration range is within the second region 45 of the charge carrier layer 4301. Since the carrier mobility in the second region 45 is high, it does not hinder the carrier migration. However, when a carrier migrates from one pixel region of the display panel to an adjacent pixel region, it needs to pass through the first region 44 from the second region 45 of the charge carrier layer 4301. Because the carrier mobility in the first region 44 is low, it hinders the carrier migration, thus preventing lateral crosstalk between adjacent sub-pixels.

[0083] Regarding the two methods of forming the carrier layer 4301 mentioned above, considering the preparation cost and process complexity, in actual production, it is possible to first form the carrier layer 4301 using the same material, and then modify the first region 44.

[0084] Regarding the selection of modification methods, the applicant needs to ensure that the process is relatively simple and that the modification process can cause as little structural change as possible to the carrier layer 4301.

[0085] Based on the above considerations, in some embodiments, the first region 44 is made of a first material, which is a material formed by doping or photo-irradiation modification of the material used to form the second region 45.

[0086] In this embodiment, in the same carrier layer 4301, for example in the hole injection layer 26, the hole injection layer 26 is first formed by the same material in one layer. At this time, the carrier mobility of the material located in the first region 44 and the material located in the second region 45 in the hole injection layer 26 is the same.

[0087] Subsequently, the material located at the first region 44 is modified by doping (e.g., ion implantation) or light irradiation (e.g., laser irradiation) to reduce the carrier mobility of the material at that location, thereby forming the first region 44 of the hole injection layer 26.

[0088] Ion implantation accelerates ions using an electric field. Ions with a certain energy enter the carrier layer 4301 and gradually lose energy through nuclear and electronic energy loss, eventually settling within the carrier layer 4301. This causes an alteration in the electrical properties of the material in the implanted region, i.e., the first region 44 of the carrier layer 4301. By employing ion implantation, the properties of the material can be directionally controlled.

[0089] The photoirradiation process transfers the energy of the radiation to the material located in the first region 44 of the charge carrier layer 4301. The ionizing radiation acts on the material, causing ionization and excitation, releasing orbital electrons, and forming free radicals. By controlling the radiation conditions, the electrical properties of the material in the first region 44 of the charge carrier layer 4301 are changed.

[0090] When performing the above two modification methods, the second region 45 of the carrier layer 4301 can be shielded by setting a mask or coating the light-emitting functional layer 43 with a shielding material, thus preventing changes in the electrical properties of the material in the second region 45. At the same time, the above two modification methods can also prevent changes in the structure of the carrier layer 4301 and will not affect the formation of other structures (such as the cathode layer 5).

[0091] In some embodiments, the carrier layer 4301 includes at least one of the following: hole injection layer 26, hole transport layer 27, electron injection layer 4, electron transport layer 205, and charge generation layer 3.

[0092] For example, the modification process can be performed after the target current-carrying sublayer (i.e., the current-carrying sublayer 4301 that needs to be modified) is formed. If there are multiple target current-carrying sublayers, the modification process can be performed once for each target current-carrying sublayer after it is formed. Alternatively, the modification process can be performed uniformly on at least two of the target current-carrying sublayers after they have been formed.

[0093] For example, the modification process can be performed after the formation of the light-emitting functional layer 43. Regarding the control of process parameters for the modification process, taking ion implantation as an example, the number of implanted ions is determined by the accumulated beam current, while the implantation depth distribution is controlled by the accelerating voltage. Both the accumulated beam current and the accelerating voltage can be precisely measured and strictly controlled by an external system. Therefore, after the formation of the light-emitting functional layer 43, the target charge carrier layer in the light-emitting functional layer 43 can be modified according to design requirements by controlling the aforementioned two parameters.

[0094] To simplify the modification process, an encapsulation layer 46 can be formed after the light-emitting functional layer 43 is formed and before the modification process is carried out. The encapsulation layer 46 can then be used to block the second region 45 of the carrier layer 4301.

[0095] like Figure 7 As shown, in some embodiments, the display panel further includes: an encapsulation layer 46, which is disposed on the side of the light-emitting functional layer 43 away from the substrate 41. The surface of the encapsulation layer 46 away from the substrate 41 is provided with a first thinning groove 4601, and the orthographic projection of the first thinning groove 4601 on the carrier layer 4301 coincides with the first region 44.

[0096] For example, a cathode layer 5 is also provided between the encapsulation layer 46 and the light-emitting functional layer 43.

[0097] For example, a protective layer 47 (OC) and a color filter layer 24 are provided on the side of the encapsulation layer 46 away from the light-emitting functional layer 43. The color filter layer 24 includes a plurality of color resist blocks 2401 corresponding to pixel areas. The plurality of color resist blocks 2401 may include R color resist block 2401, B color resist block 2401 and G color resist block 2401.

[0098] The thicker the encapsulation layer 46, the less easily ions or light can penetrate it; conversely, the thinner the encapsulation layer 46, the easier it is for ions or light to penetrate. Within the encapsulation layer 46, the area with the first thinning groove 4601 is thinner, while the area without the first thinning groove 4601 is thicker. Taking ion implantation as an example, by controlling the accelerating voltage, ions can just pass through the thinner area of ​​the encapsulation layer 46 (i.e., the area with the first thinning groove 4601), but ions cannot pass through the thicker area of ​​the encapsulation layer 46 (i.e., the area without the first thinning groove 4601) under the same accelerating voltage.

[0099] In this embodiment, since the area of ​​the encapsulation layer 46 with the first thinning groove 4601 corresponds to the location of the first region 44 of the carrier layer 4301, and the area without the first thinning groove 4601 corresponds to the location of the second region 45 of the carrier layer 4301, the accelerating voltage can be controlled to allow ions to pass through the area of ​​the encapsulation layer 46 with the first thinning groove 4601, thereby modifying the carrier layer 4301 to form the first region 44; at the same time, ions cannot pass through the area of ​​the encapsulation layer 46 without the first thinning groove 4601, and the carrier layer 4301 and the corresponding area form the second region 45.

[0100] In this embodiment, by providing a first thinning groove 4601 on the encapsulation layer 46, local modification of the carrier layer 4301 can be achieved without adding an additional shielding structure, which helps to reduce the difficulty and cost of the process.

[0101] In light of the above, the area where the first thinning groove 4601 is located in the encapsulation layer 46 is relatively thin, which may reduce the ability of the encapsulation layer 46 in this area to prevent water and oxygen intrusion.

[0102] To avoid the above risks, such as Figure 7 As shown, in some embodiments, the minimum distance f between the bottom of the first thinning groove 4601 and the surface of the encapsulation layer 46 facing the light-emitting functional layer 43 is greater than 1000 angstroms.

[0103] The thickness of the encapsulation layer 46 with the first thinning groove 4601 is limited so that the remaining thickness of the encapsulation layer 46 in that area after the first thinning groove 4601 is formed is greater than 1. It can ensure the ability of the encapsulation layer 46 to block water and oxygen intrusion and prevent water and oxygen from eroding the structural layers in the pixel area.

[0104] The first thinning groove 4601 can be formed by etching the encapsulation layer 46. However, there is a risk of over-etching during the etching process, which would adversely affect the performance of the light-emitting functional layer 43.

[0105] To mitigate the aforementioned risks, such as Figure 8 As shown, in some embodiments, the display panel further includes an etch barrier layer 4602, which is disposed on the side of the light-emitting functional layer 43 away from the substrate 41.

[0106] For example, when a cathode layer 5 is provided between the light-emitting functional layer 43 and the encapsulation layer 46, an etching barrier layer 4602 may be provided between the cathode layer 5 and the encapsulation layer 46.

[0107] For example, the material of the etching barrier layer 4602 can be Al2O3.

[0108] Of course, the encapsulation layer 46 can also be configured as a multi-layer structure, and one of the structural layers of the encapsulation layer 46 can be used as an etch barrier layer 4602.

[0109] For example, the encapsulation layer 46 includes an Al2O3 layer as an etch barrier layer 4602, and two silicon nitride layers respectively disposed on both sides of the Al2O3 layer, forming a SiN / Al2O3 / SiN structure.

[0110] In addition to the Al2O3 layer that serves as an etch barrier layer 4602 and two silicon nitride layers, the encapsulation layer 46 may also include other structural layers.

[0111] For example, the encapsulation layer 46 also includes a silicon oxide layer disposed on the side of the silicon nitride layer away from the etch barrier layer 4602, forming a SiO / SiN / Al2O3 / SiN or SiN / Al2O3 / SiN / SiO structure.

[0112] like Figure 7As shown, in some embodiments, the display panel further includes: an anode layer 1 disposed between the pixel definition layer 42 and the substrate 41, the anode layer 1 including a plurality of anodes 101 corresponding to and spaced apart from the pixel regions, and the orthographic projection of each of the plurality of pixel regions onto the anode layer 1 at least partially overlaps with the corresponding anode 101; the pixel definition layer 42 includes a first protrusion structure 4201 disposed between two adjacent anodes 101, the first protrusion structure 4201 covering the edge of the anode 101.

[0113] For example, the material of the first protrusion structure 4201 can be an inorganic material such as SiO or SiN, or an organic material such as polyimide.

[0114] The first protrusion structure 4201 can be generally in the form of a mesh, so that the pixel definition layer 42 can have multiple microcavities for accommodating light-emitting elements. The portion of the first protrusion structure 4201 that protrudes from the surface of the anode layer 1 covers the edge of the anode 101 to prevent edge leakage of the anode 101.

[0115] For example, the cross-sectional shape of the first protrusion structure 4201 can be semi-circular, trapezoidal or rectangular.

[0116] When modifying the carrier layer 4301 by ion implantation or light irradiation, the range of action of the modification treatment can be controlled by limiting the width of the first thinning groove 4601.

[0117] like Figure 8 As shown, in some embodiments, the cross-sectional shape of the first protrusion structure 4201 is polygonal, and the cross-sectional width g of the first thinning groove 4601 is smaller than the top width of the polygon.

[0118] For example, the cross-sectional shape of the first protrusion structure 4201 is trapezoidal or rectangular.

[0119] like Figure 8 Taking the trapezoidal cross-sectional shape of the first protrusion structure 4201 as an example, the top width of the trapezoid is h, and g < h.

[0120] At this time, after ions or light rays pass through the encapsulation layer 46 with the first thinning groove 4601, their effective range is limited to the top plane of the first protrusion structure 4201. Since the pixel area of ​​the display panel is located on both sides of the first protrusion structure 4201, the modification treatment will not affect the light-emitting functional layer 43 in the pixel area. At the same time, it can also make the thickness of the encapsulation layer 46 corresponding to the pixel area thicker, further reducing the risk of water and oxygen intrusion into the pixel area.

[0121] The first protrusion structure 4201 can be formed by vapor deposition (EV). During the vapor deposition of the first protrusion structure 4201, a vapor deposition shadow may occur. The vapor deposition process involves the coordinated changes in the mechanical and thermal deformation morphologies of a precision metal mask and a glass substrate. During the vapor deposition process, sometimes due to differences in the support of the vapor deposition mask or variations in the flatness of the glass substrate surface, a vapor deposition shadow area may occur near the frame of the vapor deposition mask.

[0122] To prevent the formation of vapor deposition shadow areas during the formation of the first protrusion structure 4201, the height of the first protrusion structure 4201 needs to be controlled.

[0123] In some embodiments, such as Figure 8 As shown, the pixel definition layer is made of inorganic material, the slope angle α of the first protrusion structure 4201 is greater than 45°, and the distance i between the top of the first protrusion structure 4201 and the surface of the anode layer 1 facing the pixel definition layer 42 is less than or equal to 45°.

[0124] In some embodiments, such as Figure 8 As shown, the pixel definition layer is made of organic material, the slope angle α of the first protrusion structure 4201 is less than 45°, and the distance i between the top of the first protrusion structure 4201 and the surface of the anode layer 1 facing the pixel definition layer 42 is greater than 45°.

[0125] In actual production, the light-emitting functional layer 43 can be formed through a vapor deposition process. Based on the foregoing, when vapor deposition shadows occur, the material thickness of the structural layer located within the shadowed area is typically less than that in other areas. This is usually a process defect that can cause uneven structural layer thickness or even structural layer breakage.

[0126] However, in this embodiment, a thinner region can be formed in the light-emitting functional layer 43 corresponding to the first protrusion structure 4201 using vapor deposition shadow, which facilitates modification processing. Furthermore, since the effective area of ​​the light-emitting functional layer 43 is located inside the pixel area, the thinner thickness of the region corresponding to the first protrusion structure 4201 does not affect the normal display of the display panel.

[0127] like Figure 9As shown, in some embodiments, along the width direction of the first protrusion structure 4201, a second protrusion structure 4202 is provided on both sides of the top edge of the first protrusion structure 4201, and a second thinning groove 4203 is formed between two adjacent second protrusion structures 4202. The thickness of the light-emitting functional layer 43 located in the second thinning groove 4203 is less than the thickness of the light-emitting functional layer 43 located outside the second thinning groove 4203.

[0128] The second protrusion structure 4202 extends along the top edge of the first protrusion structure 4201.

[0129] During the deposition of the light-emitting functional layer 43, due to the shielding effect of the second protrusion structure 4202, a deposition shadow will be generated in the second thinning groove 4203. As a result, the thickness of the light-emitting functional layer 43 located in the second thinning groove 4203 is smaller, and correspondingly, the thickness of the carrier layer 4301 located in the second thinning groove 4203 is also smaller.

[0130] When modifying the carrier layer 4301, taking ion implantation as an example, since the carrier layer 4301 in the second thinning trench 4203 has a smaller thickness, ions are more easily implanted into the carrier layer 4301 in this region, which helps to better change the carrier mobility of the first region 44 of the carrier layer 4301, so as to prevent crosstalk.

[0131] like Figure 9 As shown, in some embodiments, the display panel further includes an encapsulation layer 46, which is provided with a first thinning groove 4601; the orthographic projection of a second thinning groove 4203 onto the encapsulation layer 46 is located within the first thinning groove 4601.

[0132] For example, the second thinning groove 4203 is directly opposite the first thinning groove 4601.

[0133] like Figure 9 The cross-sectional width j of the second thinning groove 4203 is smaller than the cross-sectional width g of the first thinning groove 4601. This ensures that the thinner area of ​​the light-emitting functional layer 43 formed by the second thinning groove 4203 is located in the area corresponding to the first thinning groove 4601, thereby reducing the impact of the thinner area of ​​the light-emitting functional layer 43 on the effective area of ​​the light-emitting functional layer 43 (i.e., the part of the light-emitting functional layer 43 located in the pixel area) and ensuring normal display of the display panel.

[0134] like Figure 10 As shown, in some embodiments, the slope angle β of the sidewall of the second protrusion structure 4202 toward the pixel region is smaller than the slope angle γ of the sidewall of the second protrusion structure 4202 toward the second thinning groove 4203.

[0135] The slope angle of the sidewall of the second protrusion structure 4202 is related to the intensity of the vapor deposition shadow effect formed during vapor deposition. Setting the slope angle β of the second protrusion structure 4202 to be smaller can reduce the vapor deposition shadow effect on the side of the second protrusion structure 4202 facing the pixel area, which helps to ensure that the light-emitting functional layer 43 in the pixel area can work normally. At the same time, setting the slope angle γ of the second protrusion structure 4202 to be larger can enhance the vapor deposition shadow effect on the side of the second protrusion structure 4202 facing the second thinning groove 4203, so that the thickness of the carrier layer 4301 located in the second thinning groove 4203 is thinner, which facilitates the modification treatment.

[0136] like Figure 9 As shown, in some embodiments, the cross-sectional width j of the second thinning groove 4203 is smaller than the gap width k between two adjacent anodes 101.

[0137] By confining the second thinning groove 4203 within the gap region between two adjacent anodes 101, the influence of the thinner region of the light-emitting functional layer 43 on the effective region of the light-emitting functional layer 43 can be further reduced, ensuring that the light-emitting functional layer 43 in the pixel region works normally.

[0138] In some embodiments, the light-emitting functional layer 43 is an organic light-emitting functional layer 43 or an inorganic light-emitting functional layer 43.

[0139] The method of preventing crosstalk by modifying the first region 44 in the carrier layer 4301 in the above embodiments is applicable not only to organic light-emitting diodes but also to inorganic light-emitting diodes.

[0140] Based on the same inventive concept and in conjunction with the description of the display panels in the above embodiments, this embodiment provides a method for manufacturing a display panel. This method has the corresponding technical effects of the display panels in the above embodiments, which will not be repeated here.

[0141] like Figure 11 As shown, the display panel manufacturing method provided in this embodiment is used to manufacture the display panel as described in the above embodiments, and the method includes:

[0142] Step S101: A pixel definition layer is formed on the light-emitting side of the provided substrate; wherein the pixel definition layer defines a plurality of pixel regions.

[0143] A grid-like first protrusion structure is formed using a vapor deposition process to create a pixel definition layer. The microcavities enclosed by the first protrusion structure then form the pixel regions.

[0144] Step S102: A light-emitting functional layer is formed on the side of the pixel definition layer away from the substrate, wherein the light-emitting functional layer includes a carrier layer that continuously covers the pixel definition layer and the plurality of pixel regions.

[0145] A light-emitting functional layer is formed on the established pixel definition. The light-emitting functional layer includes all the charge carrier layers required to realize the light emission of the display panel, such as at least one of a hole injection layer, a hole transport layer, an electron injection layer, an electron transport layer, and a charge generation layer.

[0146] Step S103: Divide the charge carrier sublayer into a first region to be processed and a second region other than the first region to be processed; wherein the orthographic projection of the first region to be processed onto the pixel definition layer is located within the pixel definition layer.

[0147] The first region to be processed in the carrier layer corresponds to the first protrusion structure of the pixel definition layer, that is, the first region to be processed is located directly above the first protrusion structure. The second region of the carrier layer corresponds to the pixel region, that is, the second region is located in the microcavity surrounded by the first protrusion structure.

[0148] For example, the material of the first region to be processed in the carrier layer is the same as the material of the second region.

[0149] Step S104: Modify the first region to be processed in the carrier layer to form a first region; wherein the carrier mobility of the first region is less than that of the second region.

[0150] By modifying the first region to be treated, the carrier mobility is reduced, thereby forming the first region of the carrier layer. This region can hinder the lateral migration of carriers (i.e., migration within a single carrier layer), thus achieving the effect of preventing crosstalk.

[0151] In some embodiments, the carrier layer of the first region to be treated can be modified by doping or irradiation. This achieves the effect that the carrier mobility of the first region is lower than that of the second region.

[0152] In some embodiments, prior to modifying the carrier sublayer of the first region to be processed, the method further includes:

[0153] Step S201: Form an encapsulation layer covering the light-emitting functional layer.

[0154] A material layer of the designed thickness is formed on the side of the light-emitting functional layer away from the substrate through a deposition process, serving as an encapsulation layer.

[0155] Step S202: A first thinning groove is formed on the surface of the encapsulation layer away from the substrate; wherein the orthographic projection of the first thinning groove on the charge carrier layer coincides with the first region to be processed.

[0156] A first thinning groove is formed on the surface of the encapsulation layer according to the designed depth and width, so that ions or light rays can pass through the encapsulation layer at the first thinning groove to modify the underlying carrier layer.

[0157] The above method allows the encapsulation layer to be formed to the designed thickness in one step.

[0158] In some embodiments, a material layer smaller than the design thickness may be deposited first, and the carrier layer may be modified through this material layer. After the modification is completed, deposition may continue on the material layer to form an encapsulation layer that meets the design thickness.

[0159] In some embodiments, after modification, the first thinning groove is filled with the material forming the encapsulation layer or other materials to at least reduce the depth of the first thinning groove and provide the encapsulation layer with the ability to block water and oxygen intrusion.

[0160] Based on the same inventive concept and in conjunction with the description of the display panels in the above embodiments, this embodiment provides a display device that has the corresponding technical effects of the display panels in the above embodiments, which will not be repeated here.

[0161] The display device provided in this embodiment includes the display panel as described in the above embodiments.

[0162] It should be noted that the above description describes some embodiments of this application. Other embodiments are within the scope of the appended claims. In some cases, the actions or steps recorded in the claims can be performed in a different order than that shown in the above embodiments and still achieve the desired result. Furthermore, the processes depicted in the drawings do not necessarily require a specific or sequential order to achieve the desired result. In some embodiments, multitasking and parallel processing are also possible or may be advantageous.

[0163] The various embodiments in this application are described in a progressive manner, with each embodiment focusing on the differences from other embodiments. The same or similar parts between the various embodiments can be referred to each other.

[0164] The description in this application is given for illustrative purposes and is not intended to be exhaustive or to limit the application to the forms disclosed. Many modifications and variations will be apparent to those skilled in the art. The embodiments were chosen and described to better illustrate the principles and practical application of this application and to enable those skilled in the art to understand this application and design various embodiments with various modifications suitable for a particular purpose.

[0165] Those skilled in the art should understand that the discussion of any of the above embodiments is merely exemplary and is not intended to imply that the scope of this application (including the claims) is limited to these examples; within the framework of this application, the technical features of the above embodiments or different embodiments can also be combined, the steps can be implemented in any order, and there are many other variations of different aspects of the embodiments of this application as described above, which are not provided in the details for the sake of brevity.

[0166] Although this application has been described in conjunction with specific embodiments thereof, many substitutions, modifications and variations of these embodiments will be apparent to those skilled in the art from the foregoing description.

[0167] The embodiments of this application are intended to cover all such substitutions, modifications, and variations that fall within the broad scope of the appended claims. Therefore, any omissions, modifications, equivalent substitutions, improvements, etc., made within the spirit and principles of the embodiments of this application should be included within the protection scope of this application.

Claims

1. A display panel, characterized in that, include: Substrate; A pixel definition layer is disposed on the light-emitting side of the substrate, and the pixel definition layer defines a plurality of pixel regions for setting sub-pixels; A light-emitting functional layer is disposed on the side of the pixel definition layer away from the substrate. The light-emitting functional layer includes a carrier layer that continuously covers the pixel definition layer and the plurality of pixel regions. The carrier layer includes a first region and a second region other than the first region. The orthographic projection of the first region onto the pixel definition layer is located within the pixel definition layer. The carrier mobility of the first region is less than that of the second region. The display panel also includes: An encapsulation layer is disposed on the side of the light-emitting functional layer away from the substrate. A first thinning groove is provided on the surface of the encapsulation layer away from the substrate. The orthogonal projection of the first thinning groove on the charge carrier layer coincides with the first region.

2. The display panel according to claim 1, characterized in that, The first region is made of a first material, which is a material formed by doping or photo-irradiation modification of the material used to form the second region.

3. The display panel according to claim 1, characterized in that, The charge carrier layer includes at least one of a hole injection layer, a hole transport layer, an electron injection layer, an electron transport layer, and a charge generation layer.

4. The display panel according to claim 1, characterized in that, The minimum distance between the bottom of the first thinning groove and the surface of the encapsulation layer facing the light-emitting functional layer is greater than 1000 angstroms.

5. The display panel according to claim 1, characterized in that, The display panel also includes: An etching barrier layer is disposed on the side of the light-emitting functional layer away from the substrate.

6. The display panel according to claim 5, characterized in that, The encapsulation layer includes multiple stacked structural layers, one of which is the etching barrier layer.

7. The display panel according to claim 6, characterized in that, The encapsulation layer includes two silicon nitride layers respectively disposed on both sides of the etch barrier layer.

8. The display panel according to claim 7, characterized in that, The encapsulation layer further includes a silicon oxide layer disposed on the side of the silicon nitride layer away from the etch barrier layer.

9. The display panel according to claim 5, characterized in that, The etching barrier layer is an aluminum oxide layer.

10. The display panel according to claim 1, characterized in that, The display panel also includes: An anode layer is disposed between the pixel definition layer and the substrate. The anode layer includes a plurality of anodes that correspond to and are spaced apart from the pixel regions. The orthographic projection of each pixel region in the plurality of pixel regions onto the anode layer at least partially overlaps with the corresponding anode. The pixel definition layer includes a first protrusion structure disposed between two adjacent anodes, the first protrusion structure covering the edge of the anode.

11. The display panel according to claim 10, characterized in that, The display panel further includes an encapsulation layer, and the encapsulation layer is provided with a first thinning groove; The first protrusion has a polygonal cross-sectional shape, and the first thinning groove is projected onto the top plane of the polygon in the orthographic projection of the first protrusion. The cross-sectional width of the first thinning groove is smaller than the top width of the polygon.

12. The display panel according to claim 10, characterized in that, The pixel definition layer is made of inorganic material, the slope angle of the first protrusion structure is greater than 45°, and the distance between the top of the first protrusion structure and the surface of the anode layer facing the pixel definition layer is less than or equal to 1000 angstroms.

13. The display panel according to claim 10, characterized in that, The pixel definition layer is made of organic material, the slope angle of the first protrusion structure is less than 45°, and the distance between the top of the first protrusion structure and the surface of the anode layer facing the pixel definition layer is greater than 1000 angstroms.

14. The display panel according to claim 10, characterized in that, Along the width direction of the first protrusion structure, a second protrusion structure is provided on both sides of the top edge of the first protrusion structure. A second thinning groove is formed between two adjacent second protrusion structures. The thickness of the light-emitting functional layer located in the second thinning groove is less than the thickness of the light-emitting functional layer located outside the second thinning groove.

15. The display panel according to claim 14, characterized in that, The display panel further includes an encapsulation layer, and the encapsulation layer is provided with a first thinning groove; The second thinning groove is projected onto the encapsulation layer within the first thinning groove.

16. The display panel according to claim 14, characterized in that, The slope angle of the sidewall of the second protrusion structure facing the pixel region is smaller than the slope angle of the sidewall of the second protrusion structure facing the second thinning groove.

17. The display panel according to claim 14, characterized in that, The cross-sectional width of the second thinning groove is smaller than the gap width between two adjacent anodes.

18. The display panel according to claim 1, characterized in that, The light-emitting functional layer can be an organic light-emitting functional layer or an inorganic light-emitting functional layer.

19. A display device, characterized in that, Includes the display panel as described in any one of claims 1-18.

20. A method for manufacturing a display panel, characterized in that, The method for preparing a display panel as described in any one of claims 1-18 includes: A pixel definition layer is formed on the light-emitting side of the provided substrate; wherein the pixel definition layer defines a plurality of pixel regions; A light-emitting functional layer is formed on the side of the pixel definition layer away from the substrate, wherein the light-emitting functional layer includes a carrier layer that continuously covers the pixel definition layer and the plurality of pixel regions; The current carrier sublayer is divided into a first region to be processed and a second region other than the first region to be processed; wherein the orthographic projection of the first region to be processed onto the pixel definition layer is located within the pixel definition layer. The first region to be processed in the carrier layer is modified to form a first region; wherein the carrier mobility of the first region is less than that of the second region.

21. The method for manufacturing a display panel according to claim 20, characterized in that, The modification treatment of the charge carrier sublayer in the first region to be processed includes: The carrier layer of the first region to be treated is modified by doping or irradiation.

22. The method for manufacturing a display panel according to claim 20, characterized in that, Before modifying the carrier sublayer of the first region to be processed, the method further includes: Form an encapsulation layer covering the light-emitting functional layer; A first thinning groove is formed on the surface of the encapsulation layer away from the substrate; wherein the orthographic projection of the first thinning groove on the charge carrier layer coincides with the first region to be processed.

23. The method for manufacturing a display panel according to claim 22, characterized in that, After the formation of the first region, the following is also included: Fill the first thinning groove.

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