Piezoelectric thin film preparation apparatus

Abstract

The application discloses a piezoelectric film preparation equipment, which comprises a control module, a plurality of function chambers and a substrate conveying device connected between the function chambers; the plurality of function chambers comprise a mixing chamber, a substrate cleaning chamber, a spin coating chamber, a heating chamber and a polarization chamber; the mixing chamber is provided with an automatic proportioning mechanism and a stirring mechanism, the automatic proportioning mechanism is used for automatically proportioning powder raw materials and liquid raw materials to form a precursor solution; the substrate cleaning chamber is provided with a first rotating mechanism and a cleaning liquid spraying mechanism; the spin coating chamber is provided with a second rotating mechanism and a precursor solution spraying mechanism; the heating chamber is provided with an electric heating mechanism; the polarization chamber is provided with a polarization mechanism, which is used for polarizing the piezoelectric film; and the substrate conveying device is used for conveying the substrate between the substrate cleaning chamber and the spin coating chamber, between the spin coating chamber and the heating chamber and between the heating chamber and the polarization mechanism. The piezoelectric film preparation equipment has a high degree of automation.

Description

Technical Field

[0001] This invention relates to the field of piezoelectric thin film preparation technology, and in particular to a piezoelectric thin film preparation device. Background Technology

[0002] Piezoelectric thin films, such as PZT (piezoresistive lead-zirconium titanate) films, possess excellent piezoelectric properties, enabling the conversion of electrical energy into mechanical energy or vice versa. They have important applications in microelectronics, sensors, and actuators, enabling miniaturized and highly sensitive devices or systems.

[0003] Methods for preparing piezoelectric thin films include sol-gel methods, molecular beam epitaxy, and physical vapor deposition. The sol-gel method is particularly important in the field of piezoelectric thin film preparation because it facilitates uniform doping with other elements, enables the fabrication of multilayer or heterogeneous thin films, and is fully compatible with semiconductor wafer processes.

[0004] However, the existing sol-gel method has a low degree of automation and requires many manual steps, which limits the further application of the sol-gel preparation process. Summary of the Invention

[0005] This invention provides a piezoelectric thin film preparation device to improve the automation level of the piezoelectric thin film preparation process.

[0006] According to one aspect of the present invention, a piezoelectric thin film preparation apparatus is provided, the piezoelectric thin film preparation apparatus comprising a control module, a plurality of functional chambers, and a substrate transport device connected between the functional chambers; the control module is electrically connected to the functional chambers and the substrate transport device; the plurality of functional chambers include a mixing chamber, a substrate cleaning chamber, a spin coating chamber, a heating chamber, and a polarization chamber;

[0007] The mixing chamber is equipped with an automatic proportioning mechanism and a stirring mechanism. The automatic proportioning mechanism is used to automatically proportion powder raw materials and liquid raw materials to form a precursor solution; the stirring mechanism is used to stir the precursor solution.

[0008] The substrate cleaning chamber is provided with a first rotating mechanism and a cleaning liquid spraying mechanism. The first rotating mechanism is used to fix the substrate, and the cleaning liquid spraying mechanism is used to clean the substrate.

[0009] The spin coating chamber is provided with a second rotating mechanism and a precursor solution spraying mechanism. The second rotating mechanism is used to fix the substrate, and the precursor solution spraying mechanism is connected to the mixing chamber. The precursor solution spraying mechanism is used to spray the precursor solution onto the substrate to form a colloidal coating.

[0010] The heating chamber is equipped with an electric heating mechanism, which is used to heat the substrate and the colloidal coating to form a piezoelectric film;

[0011] The polarization chamber is provided with a polarization mechanism, which is used to polarize the piezoelectric thin film;

[0012] The substrate transport device is used to transport the substrate between the substrate cleaning chamber and the spin coating chamber, between the spin coating chamber and the heating chamber, and between the heating chamber and the polarization mechanism.

[0013] Optionally, the piezoelectric thin film preparation equipment further includes a housing, and the functional chamber and the substrate transport device are both disposed within the housing.

[0014] Optionally, the mixing chamber further includes a first conveying mechanism, a second conveying mechanism, and a solution transfer pipe;

[0015] The automatic proportioning mechanism includes a powder raw material storage chamber, a powder conveying pipeline, a first electronic door, a liquid raw material storage chamber, a liquid conveying pipeline, a second electronic door, a mixing container, and an electronic scale;

[0016] The powder raw material storage chamber is used to store the powder raw material; the powder conveying pipe is connected to the powder raw material storage chamber and is used to convey the powder raw material to the mixing container; the first electronic door is disposed on the powder conveying pipe and is connected to the control module, and the first electronic door is used to control the powder conveying pipe to be turned on or off.

[0017] The liquid raw material storage chamber is used to store the liquid raw material, and the liquid conveying pipeline is connected to the liquid raw material storage chamber and is used to convey the liquid raw material to the mixing container; the second electronic door is disposed on the liquid conveying pipeline and is connected to the control module, and the second electronic door is used to control the liquid conveying pipeline to be turned on or off.

[0018] The electronic scale is connected to the control module and is used to determine the weight of the precursor solution located in the mixing container.

[0019] The stirring mechanism includes an ultrasonic water tank and a rotating stirring fork. The first conveying mechanism is used to transport the mixing container to the ultrasonic water tank. The rotating stirring fork is used to rotate and stir the precursor solution in the mixing container. The ultrasonic water tank is used to generate ultrasonic waves.

[0020] The solution transmission pipeline is connected to the precursor solution spraying mechanism; the second conveying mechanism is used to deliver the stirred precursor solution to the solution transmission pipeline.

[0021] Optionally, the mixing chamber is further provided with a first cleaning fluid delivery pipe, a first spraying device, and a first drain pipe; the second conveying mechanism is also used to transport the emptied mixing container to the ultrasonic water tank;

[0022] The first cleaning fluid delivery pipe is used to deliver cleaning fluid, and the first spraying device is used to clean the mixing container located in the ultrasonic water tank using the cleaning fluid in the first cleaning fluid delivery pipe; the first drain pipe is used to discharge the cleaning fluid after cleaning.

[0023] Optionally, the first rotating mechanism includes a first vacuum adsorption rotating tray, a first vacuum line, and a first vacuum pump; the first vacuum line is connected between the first vacuum adsorption rotating tray and the first vacuum pump.

[0024] The cleaning fluid spraying mechanism includes a second cleaning fluid delivery pipe, a second spraying device, and a second drain pipe; the second spraying device is used to clean the substrate located on the first vacuum adsorption rotating tray using the cleaning fluid in the second cleaning fluid delivery pipe; the second drain pipe is used to discharge the cleaning fluid after cleaning.

[0025] Optionally, the substrate cleaning chamber is further provided with a high-temperature tape application mechanism, which is used to apply high-temperature tape to the edge of the substrate.

[0026] Optionally, the second rotating mechanism includes a second vacuum adsorption rotating tray, a second vacuum line, and a second vacuum pump; the second vacuum line is connected between the second vacuum adsorption rotating tray and the second vacuum pump.

[0027] The precursor solution spraying mechanism includes a solution nozzle, which is used to spray the precursor solution onto the substrate.

[0028] The spin coating chamber also includes a third drain pipe for discharging liquid from the spin coating chamber.

[0029] Optionally, the heating chamber is also equipped with a first electronic thermometer, a gas supply pipe, an exhaust pipe, and a waste gas treatment mechanism;

[0030] The first electronic thermometer is used to monitor the temperature of the heating chamber; the gas supply pipe is used to input gas into the heating chamber; the exhaust pipe is connected to the waste gas treatment mechanism and is used to discharge the gas in the heating chamber into the waste gas treatment mechanism.

[0031] Optionally, the polarization mechanism includes an electrode plate, a probe, a pressing device, an electrically controlled heating wire, a high-voltage signal generator, and a second electronic thermometer;

[0032] The electrode plate and the probe are both electrically connected to the high-voltage signal generator. The electrode plate and the probe are used to polarize the piezoelectric film. The pressing device is used to press the electrode plate and the piezoelectric film together. The electrically controlled heating wire is used to control the temperature of the polarization chamber. The second electronic thermometer is used to monitor the temperature of the polarization chamber.

[0033] Optionally, the polarization chamber is further provided with a support platform and a high-temperature tape removal mechanism. The support platform is used to support the substrate, and the high-temperature tape removal mechanism is disposed on the support platform and used to remove the high-temperature tape on the substrate.

[0034] The technical solution of this invention employs a piezoelectric thin film preparation device comprising: a control module, multiple functional chambers, and a substrate transport device connected between the functional chambers; the control module is electrically connected to the functional chambers and the substrate transport device; the multiple functional chambers include a mixing chamber, a substrate cleaning chamber, a spin-coating chamber, a heating chamber, and a polarization chamber; the mixing chamber is equipped with an automatic proportioning mechanism and a stirring mechanism, the automatic proportioning mechanism being used to automatically proportion powder raw materials and liquid raw materials to form a precursor solution; the stirring mechanism being used to stir the precursor solution; the substrate cleaning chamber is equipped with a first rotating mechanism and a cleaning liquid spraying mechanism, the first rotating mechanism being used to fix the substrate and clean the substrate. The washing solution spraying mechanism is used to clean the substrate; the spin coating chamber is equipped with a second rotating mechanism and a precursor solution spraying mechanism. The second rotating mechanism is used to fix the substrate, and the precursor solution spraying mechanism is connected to the mixing chamber. The precursor solution spraying mechanism is used to spray the precursor solution onto the substrate to form a colloidal coating; the heating chamber is equipped with an electric heating mechanism, which is used to heat the substrate and the colloidal coating to form a piezoelectric film; the polarization chamber is equipped with a polarization mechanism, which is used to polarize the piezoelectric film; the substrate transport device is used to transport the substrate between the substrate cleaning chamber and the spin coating chamber, between the spin coating chamber and the heating chamber, and between the heating chamber and the polarization mechanism. This piezoelectric film preparation equipment can automatically complete the preparation of piezoelectric films, reducing manual operation steps and the uncertainties caused by manual operation. This greatly improves the automation level of the piezoelectric film preparation process and increases the yield of piezoelectric films.

[0035] It should be understood that the description in this section is not intended to identify key or essential features of the embodiments of the present invention, nor is it intended to limit the scope of the invention. Other features of the invention will become readily apparent from the following description. Attached Figure Description

[0036] To more clearly illustrate the technical solutions in the embodiments of the present invention, the accompanying drawings used in the description of the embodiments will be briefly introduced below. Obviously, the accompanying drawings described below are only some embodiments of the present invention. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.

[0037] Figure 1 This is a schematic diagram of a piezoelectric thin film preparation device provided in an embodiment of the present invention;

[0038] Figure 2 A schematic diagram of a mixing chamber provided in an embodiment of the present invention;

[0039] Figure 3 This is a schematic diagram of the structure of a substrate cleaning chamber provided in an embodiment of the present invention;

[0040] Figure 4 This is a schematic diagram of the structure of a spin coating chamber provided in an embodiment of the present invention;

[0041] Figure 5 A schematic diagram of the structure of a heating chamber is provided for an embodiment of the present invention;

[0042] Figure 6 A schematic diagram of a polarization chamber provided in an embodiment of the present invention;

[0043] Figure 7 This is a schematic diagram of a substrate transport device provided in an embodiment of the present invention;

[0044] Figure 8 This is a schematic diagram of another substrate transport device provided in an embodiment of the present invention. Detailed Implementation

[0045] To enable those skilled in the art to better understand the present invention, the technical solutions of the present invention will be clearly and completely described below with reference to the accompanying drawings of the embodiments of the present invention. Obviously, the described embodiments are only some embodiments of the present invention, and not all embodiments. Based on the embodiments of the present invention, all other embodiments obtained by those skilled in the art without creative effort should fall within the scope of protection of the present invention.

[0046] It should be noted that the terms "first," "second," etc., in the specification, claims, and accompanying drawings of this invention are used to distinguish similar objects and are not necessarily used to describe a specific order or sequence. It should be understood that such data can be interchanged where appropriate so that the embodiments of the invention described herein can be implemented in orders other than those illustrated or described herein. Furthermore, the terms "comprising" and "having," and any variations thereof, are intended to cover a non-exclusive inclusion; for example, a process, method, system, product, or apparatus that comprises a series of steps or units is not necessarily limited to those steps or units explicitly listed, but may include other steps or units not explicitly listed or inherent to such processes, methods, products, or apparatus.

[0047] Figure 1 This is a schematic diagram of a piezoelectric thin film preparation device provided in an embodiment of the present invention, with reference to... Figure 1 The piezoelectric thin film fabrication equipment includes a control module 11, multiple functional chambers, and a substrate transport device connected between the functional chambers. The control module 11 is electrically connected to the functional chambers and the substrate transport device. The multiple functional chambers include a mixing chamber 1, a substrate cleaning chamber 2, a spin-coating chamber 3, a heating chamber 4, and a polarization chamber 5. The mixing chamber 1 is equipped with an automatic proportioning mechanism and a stirring mechanism. The automatic proportioning mechanism is used to automatically proportion powder raw materials and liquid raw materials to form a precursor solution. The stirring mechanism is used to stir the precursor solution. The substrate cleaning chamber 2 is equipped with a first rotating mechanism and a cleaning liquid spraying mechanism. The first rotating mechanism is used to fix the substrate, and the cleaning liquid spraying mechanism... The system is designed for cleaning the substrate; the spin coating chamber 3 is equipped with a second rotating mechanism and a precursor solution spraying mechanism. The second rotating mechanism is used to fix the substrate, and the precursor solution spraying mechanism is connected to the mixing chamber 1. The precursor solution spraying mechanism is used to spray the precursor solution onto the substrate to form a colloidal coating; the heating chamber 4 is equipped with an electric heating mechanism, which is used to heat the substrate and the colloidal coating to form a piezoelectric film; the polarization chamber 5 is equipped with a polarization mechanism, which is used to polarize the piezoelectric film; the substrate transport device is used to transport the substrate between the substrate cleaning chamber and the spin coating chamber, between the spin coating chamber and the heating chamber, and between the heating chamber and the polarization mechanism.

[0048] Specifically, piezoelectric thin film preparation equipment can be used to prepare piezoelectric thin films, such as PZT thin films. This equipment uses a sol-gel method for automated preparation of piezoelectric thin films. Figure 1As shown, the substrate transport device may include a first transport device 7, a second transport device 8, and a third transport device 9. The first transport device 7 is connected between the substrate cleaning chamber 2 and the spin coating chamber 3, and is used to transport the cleaned substrate from the substrate cleaning chamber 2 to the spin coating chamber 3. The second transport device 8 is connected between the spin coating chamber 3 and the heating chamber 4, and is used to transport the spin-coated substrate to the heating chamber 4, or to transport the heated substrate back to the spin coating chamber, thereby completing multiple spin coating and heating processes. The third transport device 9 is connected between the heating chamber 4 and the polarization chamber 5, and is used to transport the heated substrate to the polarization chamber 5 for polarization. The operation of the above substrate transport device is controlled by the control module 11 according to a set program. Each functional chamber is also controlled by the control module 11 according to a set program to perform relevant operations. The control module 11 can be a computer, and each functional chamber communicates with the computer via I / O ports.

[0049] Mixing chamber 1 is disposed on substrate cleaning chamber 2. Mixing chamber 1 is used to form a precursor solution under the control of control module 11. Specifically, control module 11 can precisely control the ratio of powder raw materials and liquid raw materials, eliminating the complex work of manual mixing and providing greater accuracy than manual mixing. Subsequently, a stirring mechanism stirs the precursor solution to ensure that the liquid raw materials and powder raw materials are mixed uniformly. It should be noted that the specific types of liquid and powder raw materials are determined according to the piezoelectric film being prepared, and this embodiment does not impose specific limitations on this.

[0050] Under the control of the control module 11, the substrate cleaning chamber 2 cleans the substrate fixed on the first rotating mechanism to prevent contaminants from remaining on the substrate. Specifically, the control module 11 controls the cleaning fluid spraying mechanism to spray cleaning fluid onto the substrate according to a set program. Cleaning while the first rotating mechanism rotates improves the cleaning effect, and the substrate can be spun dry after cleaning. The substrate cleaning and raw material mixing operations can be performed simultaneously or separately; this embodiment does not specifically limit this.

[0051] After the substrate is cleaned, the control module 11 controls the first transport device 7 to transport the cleaned substrate to the spin coating chamber 3, specifically to the second rotating mechanism. Then, the control module controls the precursor solution spraying mechanism to spray a preset amount of precursor solution onto the second rotating mechanism, which rotates to complete the spin coating function. After spin coating is complete, the control module 11 controls the second transport device 8 to transport the spin-coated substrate to the heating chamber 4, specifically to the electric heating mechanism. The control module 11 controls the electric heating mechanism to heat the substrate to form a piezoelectric thin film.

[0052] When the required piezoelectric film thickness is relatively large, it can be spin-coated and heated in multiple stages. That is, the control module 11 controls the second transport device 8 to transport the heated substrate back to the spin-coating chamber 3 for spin-coating again. When the thickness of the piezoelectric film meets the requirements, the control module 11 controls the third transport device 9 to transport the substrate to the polarization chamber 5.

[0053] In polarization chamber 5, the polarization mechanism, under the control of control module 11, polarizes the upper and lower surfaces of the piezoelectric film, thereby completing the fabrication of the entire piezoelectric film. The polarized piezoelectric film can be directly used for subsequent MEMS (microelectromechanical systems) device processing. Compared with existing processes that require additional planned operations after piezoelectric film fabrication, the piezoelectric film fabrication process in this embodiment has a higher degree of integration and automation.

[0054] In summary, the piezoelectric thin film preparation equipment of this embodiment can automatically complete the preparation of piezoelectric thin films with fewer manual operations, which can greatly improve the automation level of the piezoelectric thin film preparation process.

[0055] The technical solution of this embodiment uses a piezoelectric thin film preparation equipment including: a control module, multiple functional chambers, and a substrate transport device connected between the functional chambers; the control module is electrically connected to the functional chambers and the substrate transport device; the multiple functional chambers include a mixing chamber, a substrate cleaning chamber, a spin coating chamber, a heating chamber, and a polarization chamber; the mixing chamber is equipped with an automatic proportioning mechanism and a stirring mechanism, the automatic proportioning mechanism is used to automatically proportion powder raw materials and liquid raw materials to form a precursor solution; the stirring mechanism is used to stir the precursor solution; the substrate cleaning chamber is equipped with a first rotating mechanism and a cleaning liquid spraying mechanism, the first rotating mechanism is used to fix the substrate and clean it. The liquid spraying mechanism is used to clean the substrate; the spin coating chamber is equipped with a second rotating mechanism and a precursor solution spraying mechanism. The second rotating mechanism is used to fix the substrate, and the precursor solution spraying mechanism is connected to the mixing chamber. The precursor solution spraying mechanism is used to spray the precursor solution onto the substrate to form a colloidal coating; the heating chamber is equipped with an electric heating mechanism, which is used to heat the substrate and the colloidal coating to form a piezoelectric film; the polarization chamber is equipped with a polarization mechanism, which is used to polarize the piezoelectric film; the substrate transport device is used to transport the substrate between the substrate cleaning chamber and the spin coating chamber, between the spin coating chamber and the heating chamber, and between the heating chamber and the polarization mechanism. This piezoelectric film preparation equipment can automatically complete the preparation of piezoelectric films, reducing manual operation steps and the uncertainties caused by manual operation. This greatly improves the automation level of the piezoelectric film preparation process and increases the yield of piezoelectric films.

[0056] Optionally, continue to refer to Figure 1 The piezoelectric thin film preparation equipment also includes a housing, and the functional chambers and substrate transport device are all located inside the housing.

[0057] Specifically, in this embodiment, the cavities formed by the outer shell serve as the various functional chambers. The substrate transport device is housed within the outer shell. By using the outer shell, direct contact between operators and harmful liquids and gases can be prevented, making the entire production process safer. It should be noted that the outer shell can be designed to match the aforementioned functional chambers. Chamber doors can be provided between each chamber, and the substrate transport device communicates with the corresponding chamber door. The control module can control the opening and closing of each chamber door. When a chamber door is open, the substrate transport device can remove a substrate from the corresponding chamber or send a substrate into the corresponding chamber. By using chamber doors, the various chambers can be isolated, preventing the diffusion of harmful gases or liquids.

[0058] Optionally, Figure 2 This is a schematic diagram of a mixing chamber provided in an embodiment of the present invention, with reference to... Figure 2 The mixing chamber also includes a first conveying mechanism 27, a second conveying mechanism 28, and a solution transfer pipe 23; the automatic proportioning mechanism includes a powder raw material storage chamber 13, a powder conveying pipe 14, a first electronic door 15, a liquid raw material storage chamber 17, a liquid conveying pipe 18, a second electronic door 19, a mixing container 20, and an electronic scale 16; the powder raw material storage chamber 13 is used to store powder raw materials; the powder conveying pipe 14 is connected to the powder raw material storage chamber 13 and is used to convey the powder raw materials to the mixing container 20; the first electronic door 15 is disposed on the powder conveying pipe 14 and is electrically connected to the control module 11, and is used to control the powder conveying pipe 14 to be open or closed; the liquid raw material storage chamber 17 is used to store liquid raw materials. The liquid conveying pipe 18 is used to convey liquid raw materials to the mixing container 20; the second electronic door 19 is set on the liquid conveying pipe 18 and is used to control the liquid conveying pipe 18 to open or close; the electronic scale 16 is connected to the control module 11 and is used to determine the weight of the precursor solution in the mixing container; the stirring mechanism includes an ultrasonic water tank 21 and a rotating stirring fork 22, the first conveying mechanism 27 is used to convey the mixing container to the ultrasonic water tank 21; the rotating stirring fork 22 is used to rotate and stir the precursor solution in the mixing container, and the ultrasonic water tank 21 is used to generate ultrasonic waves; the solution transmission pipe 23 is connected to the precursor solution spraying mechanism, and the second conveying mechanism 28 is used to send the stirred precursor solution to the solution transmission pipe 23.

[0059] Specifically, when mixing liquid and powder raw materials, the control module 11 controls the first electronic door 15 and the second electronic door 19 to open according to a set program. At this time, the powder raw material in the powder raw material storage chamber 13 is transported to the mixing container 20 through the powder conveying pipe 14, and the liquid raw material in the liquid raw material storage chamber 17 is transported to the mixing container 20 through the liquid conveying pipe 18. The system shuts off when the weight monitored by the electronic scale 16 reaches the set weight, thereby completing the precise proportioning of liquid and powder raw materials. Subsequently, the first conveying mechanism 27 places the mixing container 20 into the ultrasonic water tank 21. The first conveying mechanism 27 can be a robotic arm.

[0060] After the mixing container 20 is placed in the ultrasonic water tank, the rotating stirring fork 22, under the control of the control module, extends into the mixing container 20 to rotate and stir the precursor solution. The ultrasonic water tank 21, under the control of the control module 11, generates ultrasonic waves to stir the precursor solution. Through the combined action of the rotating stirring fork and the ultrasonic water tank, the precursor solution is mixed more evenly. Subsequently, the control module 11 controls the second conveying mechanism 28 to transport the mixed precursor solution to the solution transfer pipe 23. In the above embodiment, the first conveying mechanism 27 and the second conveying mechanism 28 can be robotic arms.

[0061] Optionally, continue to refer to Figure 2 The mixing chamber is also equipped with a first cleaning fluid delivery pipe 24, a first spray device 25, and a first drain pipe 26; the second conveying mechanism is also used to transport the emptied mixing container to the ultrasonic water tank 21; the first cleaning fluid delivery pipe 24 is used to deliver the cleaning fluid, the first spray device 25 is used to clean the mixing container located in the ultrasonic water tank 21; and the first drain pipe 26 is used to discharge the cleaning fluid after cleaning.

[0062] Specifically, in this embodiment, the mixing container can be cleaned. The mixing container 20 is transported back to the ultrasonic water tank 21 by the second conveying mechanism 28. Subsequently, under the control of the control module 11, the first spraying device 25 sprays the cleaning liquid in the first cleaning liquid delivery pipe 24 into the mixing container. The ultrasonic water tank is also controlled to generate ultrasonic waves to perform ultrasonic cleaning on the mixing container. The waste liquid generated during cleaning is discharged through the first drain pipe 26. In the above embodiment, the cleaning liquid can be deionized water.

[0063] Optionally, Figure 3 This is a schematic diagram of a substrate cleaning chamber provided in an embodiment of the present invention, with reference to... Figure 3The first rotating mechanism includes a first vacuum adsorption rotating tray 29, a first vacuum line 30, and a first vacuum pump 31; the first vacuum line 30 is connected between the first vacuum adsorption rotating tray 29 and the first vacuum pump 31; the cleaning liquid spraying mechanism includes a second cleaning liquid conveying pipe 32, a second spraying device 33, and a second drain pipe 36; the second spraying device 33 is used to clean the substrate located on the first vacuum adsorption rotating tray 29 using the cleaning liquid in the second cleaning liquid conveying pipe 32; the second drain pipe 36 is used to discharge the cleaning liquid after cleaning.

[0064] Specifically, after the substrate is placed on the first vacuum adsorption rotating tray 29, the first vacuum pump 31 evacuates air through the first vacuum line 30, fixing the substrate to the first vacuum adsorption rotating tray 29. Then, the control module 11 controls the rotation of the first vacuum adsorption rotating tray 29 and controls the second spray device 33 to spray cleaning solution onto the substrate. After cleaning is complete, the control module 11 shuts off the second spray device 33 and controls the first vacuum adsorption rotating tray to continue rotating to dry the substrate. Finally, the cleaning solution is discharged through the second drain pipe 36. The cleaning solution can be deionized water.

[0065] Optionally, continue to refer to Figure 3 The substrate cleaning chamber is also equipped with a high-temperature tape application mechanism, which is used to apply high-temperature tape to the edge of the substrate.

[0066] Specifically, the high-temperature tape application mechanism includes a high-temperature tape pressing device 35 and a high-temperature tape cutting device 34. The high-temperature tape cutting device 34 cuts the corresponding high-temperature tape and places it on the high-temperature tape pressing device 35, which then applies the high-temperature tape to the edge of the substrate. It should be noted that the high-temperature tape is applied only after the substrate has been cleaned. Furthermore, the corresponding electrodes have been pre-deposited on the substrate, and the high-temperature tape covers these electrodes.

[0067] Optionally, Figure 4 This is a schematic diagram of a spin coating chamber provided in an embodiment of the present invention, with reference to... Figure 4 The second rotating mechanism includes a second vacuum adsorption rotating tray 37, a second vacuum line 38, and a second vacuum pump 401; the second vacuum line 38 is connected between the second vacuum adsorption rotating tray 37 and the second vacuum pump 401; the precursor solution spraying mechanism includes a solution nozzle 36, which is disposed on the solution transmission pipe 23 and is used to spray the precursor solution onto the substrate; the spin coating chamber also includes a third drain pipe 40, which is used to drain the liquid inside the spin coating chamber.

[0068] Specifically, after the substrate is placed on the second vacuum adsorption rotating tray 37, the second vacuum pump 401 evacuates air through the second vacuum line 38, fixing the substrate to the second vacuum adsorption rotating tray 37. The control module 11 then controls the second vacuum adsorption rotating tray 37 to rotate the substrate at a set speed, and quantitatively sprays the precursor solution from the mixing chamber and solution transfer pipe 23 through the solution nozzle 36. Subsequently, the substrate is spun at a set speed and time to obtain a colloidal coating of the desired thickness. Waste liquid in the spin coating chamber is discharged through the waste liquid collection device 39 and the third drain pipe 40.

[0069] Optionally, Figure 5 A schematic diagram of the structure of a heating chamber is provided for an embodiment of the present invention, with reference to... Figure 5 The heating chamber is equipped with a first electronic thermometer 42, a gas supply pipe 43, an exhaust pipe 44, and a waste gas treatment mechanism 45; the first electronic thermometer 42 is used to monitor the temperature of the heating chamber; the gas supply pipe 43 is used to input gas into the heating chamber, and the exhaust pipe 44 is used to discharge the gas in the heating chamber into the waste gas treatment mechanism 45.

[0070] Specifically, the electric heating mechanism in the heating chamber is an electrically controlled heating plate 41. A substrate transport device places the substrate on the electrically controlled heating plate 41, and the control module 11 heat-treats the substrate according to a set time and temperature. During the heat treatment process, fresh air is continuously supplied through the gas supply pipe 43 to remove harmful gases emitted during heating. These harmful gases are discharged into the waste gas treatment device 45 through the exhaust pipe 44, where they are treated. The heat-treated substrate can be transported to a spin-coating chamber to prepare a thicker piezoelectric film, or it can be transported to a polarization chamber for polarization.

[0071] Optionally, Figure 6 This is a schematic diagram of a polarization chamber provided in an embodiment of the present invention, with reference to... Figure 6 The polarization mechanism includes an electrode plate 48, a probe 47, a pressing device 49, an electrically controlled heating wire 53, a high-voltage signal generator 51, and a second electronic thermometer 54. The electrode plate 48 and the probe 47 are used to polarize the piezoelectric film; the pressing device 49 is used to press the electrode plate 48 and the piezoelectric film together; the electrically controlled heating wire 53 is used to control the temperature of the polarization chamber; and the second electronic thermometer 54 is used to monitor the temperature of the polarization chamber. The polarization chamber may also be equipped with a support platform 52 and a high-temperature tape removal mechanism 46. The support platform is used to support the substrate, and the high-temperature tape removal mechanism 46 is disposed on the support platform and is used to remove high-temperature tape from the substrate.

[0072] Specifically, the heat-treated high-temperature tape is placed on the support stage 52. First, the high-temperature tape at the edge of the substrate is removed by the high-temperature tape removal mechanism 46. During this process, the piezoelectric film spin-coated on the high-temperature tape is also removed, exposing the pre-deposited electrode on the substrate surface. This electrode connects to the lower surface of the piezoelectric film. Since subsequent etching of the piezoelectric film to expose the electrode is unnecessary, the process is simplified, saving costs. After removing the high-temperature tape, the electrode contacts the probe 47, and the pressing device 49 controls the electrode plate 48 to contact the upper surface of the piezoelectric film. At this point, the electrode plate 48 is equivalent to the upper surface connecting the piezoelectric film, and the probe 47 is equivalent to the lower surface connecting the piezoelectric film. Subsequently, the control module 11 controls the high-voltage signal generator 51 to generate a signal with a certain voltage and frequency, which is applied to the electrode plate and probe respectively through the wire 50, and further applied to the upper and lower surfaces of the piezoelectric film. The polarization chamber is adjusted to the set temperature by the electrically controlled heating wire 53 and the second electronic thermometer 54. By polarizing the piezoelectric film, it acquires piezoelectric properties. Then, the high-voltage signal generator switches the electrode plate and probe to zero potential to remove the charge from the piezoelectric film.

[0073] Optionally, Figure 7 This is a schematic diagram of a substrate transport device provided in an embodiment of the present invention. Figure 7 The substrate transport device shown can be a first transport device 7, a second transport device 8, or a third transport device 9. The substrate transport device includes a first optical detection module 63, a first robotic arm 64, a first lifting device 65, a first transport track 66, a second optical detection module 67, and a first alarm module 68. The first optical detection module 63 detects whether there is a substrate in the upper chamber connected to the transport device. If so, the control module places the first robotic arm 64 below the substrate, lifts the substrate using the first lifting device 65, transports the substrate to the next chamber via the first transport track 66, and lowers the substrate using the first lifting device 65, completing the transport process. After resetting, the first robotic arm uses the first and second optical detection modules to detect whether there is a substrate in the corresponding chamber (where the second optical detection module 67 detects whether there is a substrate in the next chamber connected to the transport device), thereby determining whether the substrate transport has been completed. If the transport is not complete, the first alarm module 68 triggers an alarm.

[0074] Optionally, Figure 8 This is a schematic diagram of another substrate transport device provided in an embodiment of the present invention, and... Figure 7 Unlike the substrate transport device shown, the substrate transport device in this embodiment also includes a substrate placement cavity. This substrate transport device can be positioned before the substrate cleaning chamber, with the substrate in the cleaning chamber being taken from the substrate placement cavity. Alternatively, the substrate transport device can be positioned after the polarization chamber, with the polarized substrate being removed from the polarization chamber and placed in the substrate placement cavity.

[0075] Specifically, the substrate transport device includes a substrate placement stage 55, a top cover 60, a third optical detection device 56, a second robotic arm 57, a second lifting device 58, a second transport track 59, and a second alarm module 62. When installed before the substrate cleaning chamber, its working principle is as follows: the top cover 60 is opened, and the substrate is placed on the substrate placement stage 55. The third optical detection device 56 then detects whether a substrate is present on the substrate placement stage 55. If so, the control module places the second robotic arm 57 below the substrate and lifts it using the second lifting device 58. The substrate is then transported to the substrate cleaning chamber via the second transport track 59 and lowered using the second lifting device 58, completing the transport process. After resetting, the second robotic arm uses the third optical detection module to detect whether a substrate is present in the substrate cleaning chamber, thus determining whether the substrate transport has been completed. If the transport is incomplete, the second alarm module 62 triggers an alarm. It is understood that when the substrate transport device is installed before the substrate cleaning chamber, the substrate placement stage is located on the side of the second transport track furthest from the substrate cleaning chamber; when the substrate transport device is installed after the polarization chamber, the substrate placement stage is located on the side of the second transport track furthest from the polarization chamber.

[0076] When the substrate transport device is positioned after the polarization chamber, its working principle is as follows: After substrate polarization is completed, the third optical detection device 56 detects whether there is a substrate in the polarization chamber. If so, the control module places the second robotic arm 57 below the substrate and lifts the substrate using the second lifting device 58. The substrate is then transported to the substrate placement table 55 via the second transport track 59 and lowered using the second lifting device 58, completing the transport process. After resetting, the second robotic arm uses the third optical detection module to detect whether there is a substrate in the substrate cleaning chamber, thereby determining whether the substrate transport is complete or whether the operator has removed the substrate. If the transport is not complete or the operator has removed the substrate, the second alarm module 62 will sound an alarm. After the substrate transport is complete, the top cover 60 can be opened to remove the substrate. Of course, the alarm module mentioned above can be an audible alarm module or a visual alarm module, etc.

[0077] It should be understood that the various forms of processes shown above can be used, with steps reordered, added, or deleted. For example, the steps described in this invention can be executed in parallel, sequentially, or in different orders, as long as the desired result of the technical solution of this invention can be achieved, and this is not limited herein.

[0078] The specific embodiments described above do not constitute a limitation on the scope of protection of this invention. Those skilled in the art should understand that various modifications, combinations, sub-combinations, and substitutions can be made according to design requirements and other factors. Any modifications, equivalent substitutions, and improvements made within the spirit and principles of this invention should be included within the scope of protection of this invention.

Claims

1. A piezoelectric thin film preparation apparatus, characterized in that, The piezoelectric thin film fabrication equipment includes a control module, multiple functional chambers, and a substrate transport device connected between the functional chambers; the control module is electrically connected to the functional chambers and the substrate transport device; the multiple functional chambers include a mixing chamber, a substrate cleaning chamber, a spin coating chamber, a heating chamber, and a polarization chamber; The mixing chamber is equipped with an automatic proportioning mechanism and a stirring mechanism. The automatic proportioning mechanism is used to automatically proportion powder raw materials and liquid raw materials to form a precursor solution; the stirring mechanism is used to stir the precursor solution. The substrate cleaning chamber is provided with a first rotating mechanism and a cleaning liquid spraying mechanism. The first rotating mechanism is used to fix the substrate, and the cleaning liquid spraying mechanism is used to clean the substrate. The spin coating chamber is provided with a second rotating mechanism and a precursor solution spraying mechanism. The second rotating mechanism is used to fix the substrate, and the precursor solution spraying mechanism is connected to the mixing chamber. The precursor solution spraying mechanism is used to spray the precursor solution onto the substrate to form a colloidal coating. The heating chamber is equipped with an electric heating mechanism, which is used to heat the substrate and the colloidal coating to form a piezoelectric film; The polarization chamber is provided with a polarization mechanism, which is used to polarize the piezoelectric thin film; The substrate transport device is used to transport the substrate between the substrate cleaning chamber and the spin coating chamber, between the spin coating chamber and the heating chamber, and between the heating chamber and the polarization mechanism.

2. The piezoelectric thin film preparation equipment according to claim 1, characterized in that, The piezoelectric thin film preparation equipment also includes a housing, and the functional chamber and the substrate transport device are both disposed within the housing.

3. The piezoelectric thin film preparation equipment according to claim 1, characterized in that, The mixing chamber also includes a first conveying mechanism, a second conveying mechanism, and a solution transfer pipeline; The automatic proportioning mechanism includes a powder raw material storage chamber, a powder conveying pipeline, a first electronic door, a liquid raw material storage chamber, a liquid conveying pipeline, a second electronic door, a mixing container, and an electronic scale; The powder raw material storage chamber is used to store the powder raw material; the powder conveying pipe is connected to the powder raw material storage chamber and is used to convey the powder raw material to the mixing container; the first electronic door is disposed on the powder conveying pipe and is connected to the control module, and the first electronic door is used to control the powder conveying pipe to be turned on or off. The liquid raw material storage chamber is used to store the liquid raw material, and the liquid conveying pipeline is connected to the liquid raw material storage chamber and is used to convey the liquid raw material to the mixing container; the second electronic door is disposed on the liquid conveying pipeline and is connected to the control module, and the second electronic door is used to control the liquid conveying pipeline to be turned on or off. The electronic scale is connected to the control module and is used to determine the weight of the precursor solution located in the mixing container. The stirring mechanism includes an ultrasonic water tank and a rotating stirring fork. The first conveying mechanism is used to transport the mixing container to the ultrasonic water tank. The rotating stirring fork is used to rotate and stir the precursor solution in the mixing container. The ultrasonic water tank is used to generate ultrasonic waves. The solution transmission pipeline is connected to the precursor solution spraying mechanism; the second conveying mechanism is used to deliver the stirred precursor solution to the solution transmission pipeline.

4. The piezoelectric thin film preparation equipment according to claim 3, characterized in that, The mixing chamber is also equipped with a first cleaning fluid delivery pipe, a first spraying device, and a first drain pipe; the second conveying mechanism is also used to transport the emptied mixing container to the ultrasonic water tank. The first cleaning fluid delivery pipe is used to deliver cleaning fluid, and the first spraying device is used to clean the mixing container located in the ultrasonic water tank using the cleaning fluid in the first cleaning fluid delivery pipe; the first drain pipe is used to discharge the cleaning fluid after cleaning.

5. The piezoelectric thin film preparation equipment according to claim 1, characterized in that, The first rotating mechanism includes a first vacuum adsorption rotating tray, a first vacuum line, and a first vacuum pump; the first vacuum line is connected between the first vacuum adsorption rotating tray and the first vacuum pump. The cleaning fluid spraying mechanism includes a second cleaning fluid delivery pipe, a second spraying device, and a second drain pipe; the second spraying device is used to clean the substrate located on the first vacuum adsorption rotating tray using the cleaning fluid in the second cleaning fluid delivery pipe; the second drain pipe is used to discharge the cleaning fluid after cleaning.

6. The piezoelectric thin film preparation equipment according to claim 1, characterized in that, The substrate cleaning chamber is also equipped with a high-temperature tape application mechanism, which is used to apply high-temperature tape to the edge of the substrate.

7. The piezoelectric thin film preparation equipment according to claim 1, characterized in that, The second rotating mechanism includes a second vacuum adsorption rotating tray, a second vacuum line, and a second vacuum pump; the second vacuum line is connected between the second vacuum adsorption rotating tray and the second vacuum pump. The precursor solution spraying mechanism includes a solution nozzle, which is used to spray the precursor solution onto the substrate. The spin coating chamber also includes a third drain pipe for discharging liquid from the spin coating chamber.

8. The piezoelectric thin film preparation equipment according to claim 1, characterized in that, The heating chamber is also equipped with a first electronic thermometer, a gas supply pipe, an exhaust pipe, and a waste gas treatment mechanism. The first electronic thermometer is used to monitor the temperature of the heating chamber; the gas supply pipe is used to input gas into the heating chamber; the exhaust pipe is connected to the waste gas treatment mechanism and is used to discharge the gas in the heating chamber into the waste gas treatment mechanism.

9. The piezoelectric thin film preparation equipment according to claim 1, characterized in that, The polarization mechanism includes an electrode plate, a probe, a pressing device, an electrically controlled heating wire, a high-voltage signal generator, and a second electronic thermometer. The electrode plate and the probe are both electrically connected to the high-voltage signal generator. The electrode plate and the probe are used to polarize the piezoelectric film. The pressing device is used to press the electrode plate and the piezoelectric film together. The electrically controlled heating wire is used to control the temperature of the polarization chamber. The second electronic thermometer is used to monitor the temperature of the polarization chamber.

10. The piezoelectric thin film preparation equipment according to claim 9, characterized in that, The polarization chamber is also provided with a support platform and a high-temperature tape removal mechanism. The support platform is used to support the substrate, and the high-temperature tape removal mechanism is disposed on the support platform and is used to remove the high-temperature tape on the substrate.

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