Gas manifold for substrate processing apparatus

Abstract

The present application relates to a kind of gas manifold of substrate processing device, provide a kind of gas manifold of substrate processing device, for from gas source to the process chamber for carrying out substrate processing process provides process gas, comprising: the supply pipe of metal material, from the gas source extends to distribution body along up and down direction;Metal material inflow pipe, connect with the process chamber, for the process gas is flowed into the inside of the process chamber;The delivery pipe of ceramic material is between the distribution body and the inflow pipe, for process gas delivered by the supply pipe is delivered to the inflow pipe, can offset the thermal stress caused by compression or tensile displacement according to temperature change, to improve the durable life.

Description

Technical Field

[0001] The present invention relates to a gas manifold of a substrate processing apparatus, and more particularly to a gas manifold of a substrate processing apparatus capable of counteracting thermal stress caused by the gas temperature difference in the supply piping that supplies process gas to the process chamber and maintaining airtightness. Background Technology

[0002] Typically, plasma-enhanced chemical vapor deposition (PECVD) equipment is used in display manufacturing or semiconductor manufacturing processes to deposit insulating films, protective films, oxide films, metal films, etc., on substrates under vacuum conditions using the chemical reactions of gases.

[0003] Figure 1 This is a longitudinal cross-sectional view of an example of a typical substrate processing apparatus with dual chambers. For example... Figure 1 As shown, the substrate processing apparatus 9 includes a first process chamber unit 9A and a second process chamber unit 9B, having two process chambers 11 and 21.

[0004] Specifically, the substrate processing apparatus 9 includes: two process chambers 11 and 21, each having an internal space 11c and 21c sealed from the outside to maintain a vacuum state during the deposition process; a fixture 30 disposed between the process chambers 11 and 21 to maintain a distance; bases 12 and 22, which are vertically and vertically disposed inside the process chambers 11 and 21 and used to place the substrate W; spray heads 13 and 23, which supply process gases, including source gases as deposition materials, to the interior of the process chambers 11 and 21; a gas supply source CC, which supplies process gases to the spray heads 13 and 23 through gas pipes 31 to 33; exhaust channels 14 and 24, which discharge the gases received by the process chambers 11 and 21 to the outside of the internal spaces 11c and 21c; and a common exhaust channel 40 extending from the exhaust channels 14 and 24.

[0005] To maintain a vacuum state inside the process chambers 11 and 12 while allowing the bases 12 and 22 to move up and down, a bellows for isolating external air can be provided. Thus, with the substrate W placed on the bases 12 and 22, the interior of the process chambers 11 and 21 is adjusted to a vacuum state below atmospheric pressure.

[0006] In this state, when the gas supply source CC supplies process gas to the spray heads 13 and 23, the process gas can be supplied into the process chambers 11 and 21 through the spray heads 13 and 23. At this time, if a continuous power supply is applied from the RF power supply unit to generate plasma inside the process chambers 11 and 21, a film of a certain thickness will be formed on the surface of the substrate W.

[0007] The process gases supplied to the process chambers 11 and 21 through the spray heads 13 and 23 are forced into the exhaust channels 14 and 24, which are subjected to suction pressure, after forming plasma. Then, they flow into the common discharge channel 40 through the outlets of the exhaust channels 14 and 24 and are discharged to the outside 53.

[0008] In addition, the process gas supplied from the gas supply source CC to the process chambers 11 and 21 is supplied at a high temperature of 150°C to 200°C. Therefore, the gas pipes 31 to 33 extending to the inlets 13a and 23a of the process chambers 11 and 21 repeatedly alternate between ambient temperature and high temperature, and repeatedly undergo thermal expansion and contraction.

[0009] However, in order to supply process gases to the two process chambers 11 and 21 using a single gas supply source CC, the gas piping of the substrate processing apparatus 9 does not extend in one direction, such as... Figure 1 and Figure 2 As shown, the flow path has a curved section. Therefore, the gas piping is connected to each other through multiple connections, and supplies 52 process gas from the gas supply source CC to the spray heads 13 and 23 of the process chambers 11 and 21.

[0010] However, when supplied at high temperatures, the gas piping 31 to 33 inevitably undergoes thermal deformation in the vertical z-direction and the extension x-direction due to the temperature difference at the location. Therefore, the connection of the gas piping 30 (31, 32 and 33) may cause leakage of process gas.

[0011] Furthermore, the temperature of section A1 of gas piping 31 adjacent to the gas supply source CC is approximately 200°C, while the temperature of section A2 of gas piping 32 adjacent to spray heads 13 and 23 is approximately 150°C, resulting in a significant temperature difference. Therefore, there is also a problem of deviation in the amount of thermal deformation of gas piping 31-33.

[0012] Therefore, a solution is proposed to prevent gas leakage at the connection points of gas pipes 31-33 by installing Teflon between the connection points of gas pipes 30 (31, 32, and 33). However, since the Teflon seal has poor durability and needs to be replaced frequently, there are problems such as reduced process efficiency due to the inability to continuously perform substrate processing, and increased maintenance costs for replacing the Teflon seal.

[0013] Therefore, there is an urgent need for a solution that absorbs thermal deformation of the gas piping to minimize thermal stress and effectively suppresses gas leakage at the gas piping connections during the construction of a gas manifold that supplies process gas from the gas supply source CC to at least two process chambers 11, 21.

[0014] The components and functions described above were not disclosed prior to the filing date of this application, but are used to illustrate the technology of this invention in a comparative manner. Summary of the Invention

[0015] Technical issues

[0016] In order to solve the problems mentioned above, the present invention aims to provide a gas manifold for a substrate processing apparatus, which can prevent the supply piping constituting the gas manifold from being damaged or deformed due to thermal stress caused by thermal deformation during the process of supplying high-temperature process gas from a gas source to the process chamber in a dual-chamber substrate processing system.

[0017] Furthermore, the purpose of this invention is to minimize the maintenance and management following the installation of supply piping for supplying process gases from a gas source to a process chamber.

[0018] Technical solution

[0019] To achieve the objectives described above, the present invention provides a gas manifold for a substrate processing apparatus, which supplies process gas from a gas supply source to a process chamber for performing substrate processing. The manifold includes: a metal material supply pipe extending vertically from the gas supply source to a distribution body; a metal material inflow pipe connected to the process chamber for allowing the process gas to flow into the interior of the process chamber; and a ceramic material delivery pipe located between the distribution body and the inflow pipe for delivering the process gas received through the supply pipe to the inflow pipe.

[0020] The purpose is to make the horizontally arranged delivery pipes with large thermal deformations made of ceramic material in the gas piping extending from the gas source to the process chamber, so as to minimize the thermal stress caused by the temperature change due to heat transfer during the supply of high-temperature process gas from the gas source to the process chamber, thus minimizing the thermal stress caused by the temperature change during the supply of high-temperature process gas.

[0021] The terms "gas" and "process gas" as used in this specification and claims are collective terms for source gas, reactant gas, and modulating gas, defined to refer to all gases supplied to the process chamber. Source gas is the primary film-forming material when forming a film on the substrate; reactant gas is used to react with the source gas, which is the primary material for forming the film on the substrate; carrier gas is used to supply specific gases to the process chamber; and modulating gas is used during the modulation step within the process chamber.

[0022] The term "first" as used in this specification and claims refers to a constituent element of the first process chamber unit 9A, and "second" refers to a constituent element of the second process chamber unit 9B. The names of the reference numerals in the drawings that do not include the names "first" or "second" and simultaneously indicate the constituent elements of the first process chamber unit 9A and the second process chamber unit 9B refer to the collective name of the constituent elements of the first process chamber unit 9A and the second process chamber unit 9B.

[0023] Beneficial effects

[0024] As described above, the present invention achieves the beneficial effect of improving the durability of gas piping by making the horizontally oriented piping with large thermal deformation a ceramic series material with a low coefficient of thermal expansion when providing gas piping for conveying process gas from a gas supply source to each process chamber in a substrate processing system having at least two process chambers. This minimizes thermal deformation displacement.

[0025] Most importantly, the present invention uses an elastically deformable spring plate to support one side of the conveying pipe that passes through the ceramic material and connects to the head of the fixing bolt of the pipe to be connected to the metal material. The flexural elastic displacement of the spring plate absorbs the thermal expansion deviation of the conveying pipe and the pipe connected to it caused by temperature deviation, thereby achieving the beneficial effect of counteracting the thermal stress caused by compression or tensile displacement due to temperature changes.

[0026] Based on this, the present invention can fundamentally prevent damage or breakage of components in gas manifolds used to provide high-temperature process gases due to thermal stress.

[0027] Furthermore, by providing an extension protruding from the second pipe toward the delivery pipe on the second pipe connected to the other side of the ceramic material delivery pipe, the present invention connects the delivery pipe and the second pipe with a sealing ring provided when the extension of the second pipe is surrounded by the surrounding portion of the delivery pipe.

[0028] In particular, the present invention achieves reliable sealing characteristics and eliminates the possibility of air leakage by alternately arranging sealing rings with different cross-sections between the surrounding portion of the delivery pipe and the extension portion of the second pipe, so that the deformed portion of any sealing ring fills the gap between it and the adjacent sealing rings. Attached Figure Description

[0029] Figure 1 This is a longitudinal cross-sectional view showing the structure of a typical substrate processing apparatus.

[0030] Figure 2 yes Figure 1 An enlarged view of part 'A' in the image.

[0031] Figure 3 This is a perspective view showing the structure of a gas manifold of a substrate processing apparatus according to an embodiment of the present invention.

[0032] Figure 4 yes Figure 3 An enlarged view of part 'B' in the image.

[0033] Figure 5 yes Figure 3 An enlarged view of the 'C' part.

[0034] Figure 6a and Figure 6b It is based on Figure 5 The cross-sectional view taken by the tangent XX in the figure is used to illustrate the effect of thermal stress cancellation.

[0035] Figure 7 This is another embodiment of the present invention, according to Figure 5 The cross-sectional view of the corresponding part intercepted by the tangent XX in the figure.

[0036] Figure 8 yes Figure 3 Longitudinal section view.

[0037] Figure 9 yes Figure 8 An enlarged view of the 'D' part in the image.

[0038] Figure 10 yes Figure 8 An enlarged view of the 'E' part in the image.

[0039] Figure Labels

[0040] 100: Gas manifold; 110: Supply piping

[0041] 120: Delivery piping; 130: Inflow piping

[0042] 140: Sealing ring; 150: Piping assembly

[0043] 151: Fixing bolt; 154: Spring plate Detailed Implementation

[0044] Hereinafter, the gas manifold 100 of a substrate processing apparatus according to an embodiment of the present invention will be described in detail with reference to the accompanying drawings. However, in order to make the gist of the present invention clear, specific descriptions of known functions or structures will be omitted.

[0045] According to an embodiment of the present invention, a substrate processing apparatus equipped with a gas manifold 100 has a dual-chamber configuration in which substrate processing processes are performed separately in two process chambers, such as... Figure 1As shown, the system includes a first process chamber unit 9A and a second process chamber unit 9B. The first process chamber unit 9A has a first process chamber 11 for performing substrate processing, and the second process chamber unit 9B has a second process chamber 21 for performing substrate processing. Furthermore, a discharge channel 40 is provided between the first process chamber unit 9A and the second process chamber unit 9B for discharging process gases from the first process chamber 11 and the second process chamber 21 after the substrate processing. The structures of the process chamber units 9A and 9B are compatible with... Figure 1 The structures shown are the same or similar.

[0046] like Figures 3 to 10 As shown, the gas manifold 100 of the substrate processing apparatus according to an embodiment of the present invention forms a gas passage from a gas supply source CC that provides process gas to each of the process chambers 11, 21 that perform the substrate processing process, so as to provide process gas from the gas supply source CC to the first process chamber 11 and the second process chamber 21.

[0047] Specifically, the gas manifold 100 includes: a metal supply pipe 110 extending vertically from the gas source CC; a distribution body 101 connected to the supply pipe 110; a delivery pipe 120 extending horizontally from both sides of the distribution body 101; an inflow pipe 130 connected to inlets 13a and 23a, which communicate with the spray heads 13 and 23 of each process chamber 11 and 21; a sealing ring 140 located between the delivery pipe 120 and the inflow pipe 130, with the inflow pipe 130 connected to one side of the delivery pipe 120; and a pipe assembly 150 for connecting the delivery pipe 120 and the inflow pipe 130.

[0048] The supply piping 110 forms a supply flow channel 110p and is made of a durable metal material, extending vertically from the gas supply source CC to the distribution body 101. For example, the supply piping 110 may be made of aluminum (e.g., Al6061).

[0049] The distribution body 101 has an upper connecting portion on its upper side that connects to the supply pipe 110, and side connecting portions on both sides that connect to the delivery pipe 120. The distribution body 101 has a receiving space 101c that communicates with the supply channel 110p.

[0050] The dispenser 101 can be formed from various durable metallic materials, such as aluminum (e.g., A16061).

[0051] One side of the delivery piping 120 is connected to the inflow piping 130, and the other side is connected to the distribution body 101. The delivery piping 120 may be formed of a ceramic-based material (e.g., Al2O3) with a low coefficient of thermal expansion to temperature changes.

[0052] Based on this, even if the temperature-dependent expansion displacement of the supply pipe 110, the distributor 101, and the inflow pipe 130, which are made of metal materials with relatively high thermal expansion coefficients, increases in the vertical direction (z-axis direction), the temperature-dependent expansion displacement of the delivery pipe 120 in the horizontal direction (x-axis direction) can be kept small. This minimizes the deformation of the twisted shape that occurs at the connection between the pipes 101, 110, 120, and 130 of the gas manifold.

[0053] One end of the inflow pipe 130 is connected to the delivery pipe 120 and receives process gas through the delivery pipe 120, while the other end is connected to the inflow inlets 13a and 23a of the process chambers 11 and 21 and supplies process gas to the spray heads 13 and 23.

[0054] The inflow piping 130 is formed of various metal materials with excellent durability, for example, it may be formed of aluminum (e.g., Al6061).

[0055] In the gas manifold 100 having the structure described above, process gas is supplied from the gas supply source CC to the receiving space 101c of the distribution body 101 via the supply channel 110p of the supply pipe 110. After passing through the delivery channel 120p of the delivery pipe 120, process gas is supplied from the receiving space 101c of the distribution body 101 to the spray heads 13 and 23 of the process chambers 11 and 21 via the curved inflow channels 130p1 and 130p2 of the inflow pipe 130 connected to the delivery pipe 120.

[0056] Although not shown in the attached figure, a regulating valve may be provided in the process gas supply channel to adjust the supply flow rate of the process gas per unit time, so as to separately regulate the flow rate of the process gas flowing into the first process chamber 11 and the second process chamber 21.

[0057] In the gas manifold 100 having the structure described above, the ceramic material delivery piping 120 can, to some extent, offset the thermal expansion deformation of the supply piping 110, the distribution body 101, and the inflow piping 130 based on temperature changes. However, the connection portion used to connect at least one of the inflow piping 130 and the distribution body 101 of the delivery piping 120 requires a structure that can fix the connection state by the connection fixing body 150 while offsetting the thermal stress based on temperature changes and preventing gas leakage.

[0058] The structure can be applied to at least one side of the conveying pipe 120. For ease of explanation, the structure applied to the conveying pipe 120 and the inflow pipe 130 will be described below.

[0059] like Figures 3 to 6aAs shown, a stepped surface 120s is provided on the connection portion of the conveying pipe 120. A washer plate 153 is tightly provided on the stepped surface 120s, and a spring plate 154 is stacked on the washer plate 153, so that the spring plate 154 is supported on the stepped surface 120s. Furthermore, with the head of the fixing bolt 151 hanging on the spring plate 154, at least two spaced apart positions, the male screw portion of the fixing bolt 151 passes through the spring plate 154, the washer plate 153, and the through hole 122 of the conveying pipe 120, and is fastened in the bolt hole 132 formed in the inflow pipe 130. At this time, a fixing washer or a spring washer 152 surrounding the fixing bolt 151 is provided between the spring plate 154 and the washer plate 153.

[0060] Therefore, as Figure 6b As shown, based on the difference in the coefficients of thermal expansion between the delivery pipe 120 and the inflow pipe 130, the inflow pipe 130 deforms in the direction indicated by reference numeral 130d. When the delivery pipe 120 does not deform, the thermal deformation of the inflow pipe 130 pulls the high-rigidity fixing bolt 151 in the direction indicated by reference numeral 130d, thus causing the spring plate 154 to flexurally deform. This also applies to the case where the inflow pipe 130 deforms in the opposite direction to reference numeral 130d.

[0061] That is, based on the thermal deformation caused by temperature changes in the conveying pipe 120 and the inflow pipe 130, compressive or tensile stress is applied to the connection between the conveying pipe 120 and the inflow pipe 130. Using the fixing bolt 151 as a medium, the elastic deflection of the spring plate 154 absorbs and cancels out the deviation in thermal expansion deformation caused by the thermal deformation. Therefore, no stress concentration caused by thermal stress occurs on either side of the connection between the conveying pipe 120 and the inflow pipe 130, thus achieving the beneficial effect of long-term protection against damage or breakage and ensuring a longer service life.

[0062] Furthermore, although the accompanying drawings show a structure in which an elastic washer 152 is arranged between the spring plate 154 and the washer plate 153 to form an empty space between the spring plate 154 and the washer plate 153, according to another embodiment of the present invention, as long as an empty space is provided that allows the spring plate 154 to elastically flex, a fixing washer (or a flat washer) with sufficient thickness can be provided instead of the elastic washer 152.

[0063] like Figure 7 As shown, according to another embodiment of the present invention, a protrusion 254a protruding toward the other of the spring plate 254 and the washer plate 153 may be formed on either the spring plate 254 and the washer plate 153 to form an empty space between the spring plate 254 and the washer plate 153 and to serve a similar function.

[0064] Furthermore, in the structure of the connecting fixing body 150, the washer 152 can be directly provided on the stepped surface 120s, so the washer plate 153 can also be omitted in another embodiment of the present invention.

[0065] Furthermore, the conveying pipe 120 is connected and fixed on one side by a connecting fixing body 150, thus offsetting the thermal stress caused by thermal expansion deviation due to temperature changes and temperature differences on one side of the conveying pipe 120. Figure 10 As shown, O-rings 128 and 129 can be provided between the connection between the delivery pipe 120 and the distribution body 101 on the other side, and spacers 122 can be inserted as needed for connection.

[0066] However, the present invention is not limited to this. It may also be possible to connect the aforementioned connecting and fixing body 150 to the distribution body 101 on the other side of the delivery pipe 120, and it may include a structure in which the connecting and fixing body 150 is used to connect the distribution body 101 only on the other side of the delivery pipe 120.

[0067] In addition, such as Figure 4 and Figure 9 As shown, at the connection between the delivery pipe 120 and the inflow pipe 130, the flow cross sections of the delivery pipe 120 and the inflow pipe 130 are the same and constant. At the same time, an extension 135 protruding toward the delivery pipe 120 in a closed cross section is formed on the inflow pipe 130, and a surrounding portion 125 surrounding the extension 135 is formed on the delivery pipe 120.

[0068] Furthermore, an elastically deformable sealing ring 140 is provided between the outer peripheral surface of the extension 135 of the inflow pipe 130 and the inner peripheral surface of the surrounding portion 125 of the delivery pipe 120. The sealing ring 140 may be formed in multiple rows; preferably, the sealing ring is formed by alternating arrangements of a first sealing ring 141 with a generally square cross-section and a second sealing ring 142 with a circular cross-section.

[0069] Thus, when the fixing bolt 151 is tightened into the bolt hole 132 of the inflow pipe 130, the delivery pipe 120 and the inflow pipe 130 are in close contact with each other. At the same time, the multiple rows of sealing rings 140 provided between the extension 135 and the surrounding part 125 are in close contact with each other, thereby completely eliminating the gap between the delivery pipe 120 and the inflow pipe 130.

[0070] In other words, the first sealing ring 141 and the second sealing ring 142 are formed with different cross sections. The shape difference caused by the compression deformation of the sealing rings with different cross sections is filled by the shape of the compression deformation of the adjacent sealing rings, so that the gap between the extension 135 and the surrounding part 125 is completely filled. Therefore, the gap between the delivery pipe 120 and the inflow pipe 130 that causes gas leakage can be completely eliminated.

[0071] The reference numeral 120e, not described in the accompanying drawings, is an inclined surface that fills the gap between the extension 135 and the surrounding portion 125 based on a combination of sealing rings 140 (141, 142) with different cross sections, and forms a receiving space for accommodating a portion of the cross section of the sealing ring.

[0072] The sealing ring 140, as shown in the attached figure, can be disposed between the inflow pipe 130 and the delivery pipe 120, or between the delivery pipe 120 and the distribution body 101.

[0073] According to the gas manifold 100 of the substrate processing apparatus of the present invention with the structure described above, the connection between the delivery pipe 120 and the inflow pipe 130 or the connection between the delivery pipe 120 and the distribution body 101, which are made of different materials, is connected by a pipe assembly 150 including a fixing bolt 151 and a spring plate 154. This can achieve the effect of counteracting thermal stress caused by thermal expansion deviation. At the same time, an extension 135 and a surrounding portion 125 are formed, and a plurality of sealing rings 140 (141, 142) with different cross sections are arranged in the gap between them. This can completely eliminate the gap between them even if the delivery pipe 120 of the ceramic material with a small amount of thermal expansion deformation is displaced in the axial direction, thereby achieving the beneficial effect of eliminating the possibility of gas leakage.

[0074] As described above, although preferred embodiments of the present invention have been described with reference to them, those skilled in the art will understand that various modifications and variations can be made to the combination of components according to the embodiments of the present invention without departing from the technical concept and scope of the present invention as set forth in the claims.

Claims

1. A gas manifold for a substrate processing apparatus, used to supply process gases for plasma generation from a gas supply source to multiple process chambers, including a first process chamber and a second process chamber, for performing substrate processing processes, characterized in that, include: A supply piping made of metal extends vertically from the gas supply source to the distribution body; Multiple inflow pipes of metallic materials are respectively connected to the first process chamber and the second process chamber, for causing the process gas to move downward and flow into the interior of the first process chamber and the second process chamber; Multiple ceramic material delivery pipes are arranged horizontally between the distribution body and the multiple inflow pipes, for delivering process gas transmitted through the supply pipes to the multiple inflow pipes respectively. A fixing bolt, which passes through the delivery pipe and is fixed to either the distribution body or the inflow pipe; and A spring plate, which is a flexible and elastically deformable plate, is used to support the head of the fixing bolt. At least two of the fixing bolts pass through the spring plate spaced apart from each other, and the elastic flexural deformation of the spring plate between the penetration positions of the spaced-apart fixing bolts offsets the thermal expansion deviation between the distribution body and the inflow piping and the delivery piping.

2. The gas manifold of the substrate processing apparatus as claimed in claim 1, characterized in that: A stepped surface for supporting the spring plate is formed on the conveying pipe.

3. The gas manifold of the substrate processing apparatus as described in claim 2, characterized in that: A washer plate is arranged between the spring plate and the stepped surface.

4. The gas manifold of the substrate processing apparatus as described in claim 3, characterized in that: A retaining washer is arranged between the spring plate and the washer plate in such a way that an empty space is formed between the spring plate and the washer plate, surrounding the retaining bolt.

5. The gas manifold of the substrate processing apparatus as described in claim 3, characterized in that: A spring washer is arranged between the spring plate and the washer plate in such a way that an empty space is formed between the spring plate and the washer plate, surrounding the fixing bolt.

6. The gas manifold of the substrate processing apparatus as claimed in claim 3, characterized in that: A protrusion is formed on either the spring plate or the washer plate such that an empty space is created between the spring plate and the washer plate, protruding toward the other of the spring plate and the washer plate.

7. The gas manifold of the substrate processing apparatus as claimed in any one of claims 1 to 6, characterized in that: The flow cross-section of the delivery piping is the same as the flow cross-section of either the distribution body or the inflow piping.

8. The gas manifold of the substrate processing apparatus as claimed in claim 7, characterized in that: An extension protruding toward the delivery pipe is formed on either the distribution body or the inflow pipe, and a surrounding portion surrounding the extension is formed on the delivery pipe; An elastically deformable sealing ring is provided between the extension and the surrounding portion.

9. The gas manifold of the substrate processing apparatus as claimed in claim 8, characterized in that: The sealing rings are arranged in multiple rows.

10. The gas manifold of the substrate processing apparatus as claimed in claim 9, characterized in that: The sealing ring is composed of alternating first and second sealing rings with different cross-sections.

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