A boe etching solution for silicon oxide layer

Abstract

In order to overcome the difference in etching rate of the inclined surface of the silicon oxide layer in the prior art, the two-section angle is not conducive to the deposition of metal particles on the surface, the application provides a BOE etching solution for a silicon oxide layer, the etching solution comprises hydrogen fluoride, ammonium fluoride, a fluorine-containing carboxylic acid compound, a cationic surfactant and water, the mass percentage of the fluorine-containing carboxylic acid compound is 0.05% to 0.30%, and the mass percentage of the cationic surfactant is 0.005% to 0.050%; the BOE etching solution for the silicon oxide layer provided by the application can better reduce the rate difference between the bottom and the top of the silicon oxide inclined surface, realize the etching performance of the silicon oxide layer, and has the effects of good etching profile and no residue.

Description

Technical Field

[0001] This invention belongs to the field of etching solution technology, and specifically relates to a BOE etching solution for etching silicon oxide thin films. Background Technology

[0002] With the rapid development of the global panel industry, the manufacturing technology of OLED (Organic Light-Emitting Diode) displays is also constantly being updated, and the requirements for each process are becoming more stringent. Wet etching mainly uses buffered oxide etchant (BOE) to etch the silicon oxide layer without photoresist protection, thereby obtaining the required contour and etching parameters. Areas that do not need to be etched can be completely preserved under the protection of photoresist above the silicon oxide layer. Therefore, wet etching is one of the most critical steps in the entire panel manufacturing process.

[0003] The source and drain, as crucial components of OLEDs, function as collectors and emitters, respectively. Their formation primarily involves depositing different types of metal layers above the silicon oxide separator using physical vapor deposition (PVD). Therefore, the contour and etching parameters of the silicon oxide layer are critical to the formation of the source and drain. During the wet etching process of silicon oxide, due to differences in silicon oxide formation in different regions and poor wetting properties of the etching solution, the etching rate of the beveled surface of the silicon oxide layer varies significantly, resulting in a two-stage angle on the bevel (e.g., ...). Figure 3 This is not conducive to the deposition of metal particles on its surface, and has a significant impact on the electrical performance of the source and drain electrodes.

[0004] In actual industrial production, increasing the etching rate of the BOE etching solution on the silicon oxide layer is essential to improve production efficiency. However, an increased etching rate can further exacerbate corner defects on the beveled surface. Furthermore, hydrogen fluoride has a strong corrosive effect on metal alloys such as aluminum alloys, which can lead to severe equipment damage during industrial production, resulting in unnecessary economic losses. Summary of the Invention

[0005] In view of the problem that the etching rate of the inclined surface of the silicon oxide layer in the prior art is different, resulting in two-segment angles, which is not conducive to the deposition of metal particles on its surface, this application provides a BOE etching solution for silicon oxide layers.

[0006] To address the aforementioned technical problems, this application provides a BOE etching solution for silicon oxide layers. The etching solution comprises hydrogen fluoride, ammonium fluoride, a fluorinated carboxylic acid compound, a cationic surfactant, and water. The fluorinated carboxylic acid compound has a mass percentage content of 0.05% to 0.30%, and the cationic surfactant has a mass percentage content of 0.005% to 0.050%.

[0007] Preferably, the mass ratio of the fluorinated carboxylic acid compound to the cationic surfactant is (2-12):1.

[0008] Preferably, the mass ratio of the fluorinated carboxylic acid compound to the cationic surfactant is (3-8):1.

[0009] Preferably, the hydrogen fluoride has a mass content of 1% to 10%, and the ammonium fluoride has a mass content of 15% to 38%.

[0010] Preferably, the fluorinated carboxylic acid compound is a compound having at least one hydrogen atom on a carbon atom replaced by a fluorine atom and containing a carboxyl group, including one or more of perfluorooctanoic acid, perfluorononanoic acid, 2-(N-ethylperfluorooctanesulfonamide)acetic acid and 3-ethylperfluorooctanesulfonamide acetic acid.

[0011] Preferably, the fluorinated carboxylic acid compound is 2-(N-ethylperfluorooctanesulfonylamino)acetic acid.

[0012] Preferably, the cationic surfactant includes one or more of quaternary ammonium salt cationic surfactants or amine salt cationic surfactants.

[0013] Preferably, the quaternary ammonium salt cationic surfactant includes one or more of dodecyltrimethylammonium bromide, hexadecyltrimethylammonium bromide, octadecyltrimethylammonium bromide, dioctadecyldimethylammonium chloride, N,N,N-trimethyl-1-tetradecylammonium bromide, and polythionium chloride.

[0014] Preferably, the amine salt cationic surfactant is N-oleoylsarcosine octadecylamine salt.

[0015] Preferably, the quaternary ammonium cationic surfactant is hexadecyltrimethylammonium bromide.

[0016] Preferably, the BOE etching solution further includes a corrosion inhibitor, which includes one or more of thiourea, diphenylthiourea, methylbenzotriazole, benzotriazole, 5-aminotetrazole, 5-methyltetrazole, and 8-hydroxyquinoline; the corrosion inhibitor has a mass percentage of 0.10% to 0.50%.

[0017] Preferably, the corrosion inhibitor is diphenylthiourea.

[0018] Preferably, the corrosion inhibitor has a mass percentage content of 0.15% to 0.30%.

[0019] Beneficial effects:

[0020] Compared with the prior art, the BOE etching solution for silicon oxide layers provided in this application can achieve good etching performance for silicon oxide layers, with good etching profile and no residue; the cationic surfactant and fluorinated carboxylic acid compound work together to reduce the rate difference between the bottom and top of the silicon oxide slope, thereby eliminating the two-stage angle of the slope and obtaining the required etching profile and parameters. Attached Figure Description

[0021] Figure 1 This is a schematic diagram of the structure before silicon oxide etching;

[0022] Figure 2 This is a schematic diagram of the two-segment corner structure of the silicon oxide bevel after etching in Example 1;

[0023] Figure 3 This is a schematic diagram of the two-segment corner structure of the silicon oxide bevel after etching in Comparative Example 1.

[0024] Figure 4 This is a schematic diagram of the two-segment corner structure of the silicon oxide bevel after etching, as shown in Comparative Example 6. Detailed Implementation

[0025] To make the technical problems solved, the technical solutions, and the beneficial effects of this invention clearer, the invention will be further described in detail below with reference to embodiments. It should be understood that the specific embodiments described herein are merely illustrative and not intended to limit the invention.

[0026] On one hand, this application provides a BOE etching solution for silicon oxide layers, the etching solution comprising hydrogen fluoride, ammonium fluoride, a fluorinated carboxylic acid compound, a cationic surfactant and water, wherein the fluorinated carboxylic acid compound has a mass percentage content of 0.05% to 0.30%, and the cationic surfactant has a mass percentage content of 0.005% to 0.050%.

[0027] In this embodiment, the addition of a fluorinated carboxylic acid compound at a mass content of 0.05%–0.30% helps to increase the etching rate at the top of the silicon oxide slope, while the addition of a cationic surfactant at a mass content of 0.005%–0.050% increases the mass transfer resistance of the etching solution and reduces the etching rate at the bottom of the silicon oxide slope. The fluorinated carboxylic acid compound and the cationic surfactant work synergistically to reduce the rate difference at the slope etching interface, thus better solving the problem of the two-stage corner technique that occurs on the silicon oxide slope during the etching process. The BOE etching solution for silicon oxide layers provided in this application can achieve good etching performance on the silicon oxide layer, with good contour and no residue. The cationic surfactant and the fluorinated carboxylic acid compound work synergistically to effectively reduce the rate difference between the bottom and top of the silicon oxide slope, thereby eliminating the two-stage corner technique (such as...) on the slope. Figure 3 As shown in the figure, the etching profile and parameters that meet the requirements are obtained.

[0028] It should be noted that the mass content of fluorinated carboxylic acid compounds can be 0.05%, 0.055%, 0.06%, 0.065%, 0.07%, 0.075%, 0.08%, 0.085%, 0.09%, 0.095%, 0.1%, 0.2%, or 0.3%, and the mass content of fluorinated carboxylic acid compounds needs to be within the range of 0.05% to 0.30%. The mass content of cationic surfactants can be 0.005%, 0.006%, 0.007%, 0.008%, 0.009%, 0.01%, 0.02%, 0.03%, 0.04%, or 0.05%, as long as the mass content of cationic surfactants is within the range of 0.005% to 0.050%.

[0029] In some embodiments, the hydrogen fluoride has a mass content of 1% to 10%, and the ammonium fluoride has a mass content of 15% to 38%.

[0030] Specifically, hydrogen fluoride is the main component of the etching solution, which corrodes glass and any silica-containing materials; ammonium fluoride is used as a buffer to fix hydrogen fluoride. + The concentration of hydrogen fluoride in the BOE etching solution is adjusted to maintain a certain etching rate. Variations in the hydrogen fluoride content affect the overall etching rate; excessively high hydrogen fluoride content enhances the corrosion of the metal. Studies have shown that maintaining a hydrogen fluoride content of 1%–10%, an ammonium fluoride content of 15%–38%, and a fixed H₂ concentration are optimal for achieving the desired etching rate. + The concentration is such that while ensuring a high etching rate, the corrosion of the etching solution on the metal material can be minimized as much as possible.

[0031] It should be noted that the mass content of hydrogen fluoride can be 1%, 1.5%, 2.0%, 3.0%, 3.5%, 4.0%, 5.0%, 6.0%, 7.0%, 8.0%, 9.0%, or 10.0%, as long as the mass content of hydrogen fluoride is between 1% and 10%. The mass content of ammonium fluoride can be 15%, 16%, 17%, 18%, 19%, 20%, 21%, 22%, 23%, 24%, 25%, 26%, 27%, 28%, 29%, 30%, 31%, 32%, 33%, 34%, 35%, 36%, 37%, or 38%, and the mass content of ammonium fluoride must be within the range of 15% to 38%.

[0032] In some embodiments, the fluorinated carboxylic acid compound is a compound having at least one hydrogen atom on a carbon atom replaced by a fluorine atom and containing a carboxyl group, including one or more of perfluorooctanoic acid, perfluorononanoic acid, 2-(N-ethylperfluorooctanesulfonamide)acetic acid and 3-ethylperfluorooctanesulfonamide acetic acid.

[0033] In this embodiment, because the photoresist is a hydrophobic material, the fluorinated carbon chains in the fluorinated carboxylic acid compound have a strong hydrophobic effect and are easily adsorbed on one side of the photoresist, allowing the carboxylic acid groups to have more contact with the top of the silicon oxide, thereby improving the etching rate at the top of the silicon oxide slope. By increasing the etching rate at the top of the silicon oxide slope using the fluorinated carboxylic acid compound and reducing the difference in etching rates between the bottom and top of the silicon oxide slope, a satisfactory etching profile can be obtained, which helps to improve production efficiency to a certain extent.

[0034] In some preferred embodiments, the fluorinated carboxylic acid compound is 2-(N-ethylperfluorooctanesulfonylamino)acetic acid.

[0035] Specifically, since the main component of photoresist is a hydrophobic organic material, and the fluorocarbon chain in the structure of 2-(N-ethylperfluorooctanesulfonylamino)acetic acid has a strong hydrophobic effect, 2-(N-ethylperfluorooctanesulfonylamino)acetic acid is easily adsorbed onto one side of the photoresist in the etching solution (e.g., ...). Figure 2 In the C region, the carboxylic acid group is close to the top of the silicon oxide, which is beneficial to the etching rate of the top of the silicon oxide slope; at the same time, 2-(N-ethylperfluorooctanesulfonylamino)acetic acid can also increase the local fluoride ion concentration, further accelerating the etching rate of the top.

[0036] In some embodiments, the cationic surfactant includes one or more of quaternary ammonium cationic surfactants or amine cationic surfactants.

[0037] The quaternary ammonium salt cationic surfactant includes one or more of dodecyltrimethylammonium bromide, hexadecyltrimethylammonium bromide, octadecyltrimethylammonium bromide, dioctadecyldimethylammonium chloride, N,N,N-trimethyl-1-tetradecylammonium bromide, and polythionium chloride.

[0038] The amine salt cationic surfactant is N-oleoylsarcosine octadecylamine salt.

[0039] Specifically, by adding cationic surfactants at a mass content ranging from 0.005% to 0.050%, the surface tension of the liquid can be significantly reduced, improving the wettability of the etching solution on the bottom or top of the silicon oxide, and enhancing the uniformity of etching. Furthermore, silicon oxide (with an isoelectric point of around 2.0) carries a negative charge on its surface in the above system, and the cationic surfactant can adhere to its surface through electrostatic adsorption, thereby increasing the mass transfer resistance of the etching solution and inhibiting the etching rate to some extent. Due to steric hindrance and other reasons, the cationic surfactant adheres to the bottom of the silicon oxide slope (…). Figure 2 Region A exhibits higher adsorption capacity and a stronger inhibitory effect, significantly reducing the bottom etching rate. This helps minimize the difference in etching interface rates, thereby improving the two-stage corner problem. Therefore, by leveraging the synergistic effect of fluorinated compounds and cationic surfactants in the solution, the etching rate difference between the bottom and top of the silicon oxide slope can be reduced, ensuring etching uniformity and achieving the required etching profile, thus contributing to improved production efficiency.

[0040] In some preferred embodiments, the cationic surfactant is hexadecyltrimethylammonium bromide.

[0041] In this application, the cationic surfactant and fluorinated carboxylic acid compound work synergistically to solve the problem of the two-segment angle on the bevel. Extensive research has shown that the added fluorinated carboxylic acid compound, with a mass content of 0.05%–0.30%, and the cationic surfactant, with a mass content of 0.005%–0.050%, are more readily adsorbed onto one side of the photoresist at the top of the silicon oxide bevel, thus improving the etching rate at the top of the silicon oxide bevel. Synergistically, the cationic surfactant reduces the rate difference between the top and bottom, eliminating the two-segment angle. However, when the mass content of the fluorinated carboxylic acid compound is below 0.05%, there is no significant improvement in the etching rate at the top of the silicon oxide, resulting in a large difference in etching rates between the top and bottom, and the two-segment angle problem is not effectively improved. When the mass content of the fluorinated carboxylic acid compound is above 0.3%, the etching solution does not further improve the etching rate at the top of the silicon oxide, instead causing significant waste and increasing manufacturing costs. Furthermore, excessive fluorinated carboxylic acid compounds can corrode the photoresist, affecting etching quality. If the added cationic surfactant is higher than 0.05%, the overall etching rate will decrease, affecting the etching efficiency; if the added cationic surfactant is lower than 0.005%, it will not achieve the wetting effect on the silicon oxide surface, will not improve the etching uniformity, and will not help to reduce the rate difference between the bottom and top of the silicon oxide slope.

[0042] In some preferred embodiments, the fluorinated carboxylic acid compound has a mass percentage content of 0.10% to 0.30%; and the cationic surfactant has a mass percentage content of 0.025% to 0.050%.

[0043] In some embodiments, the mass ratio of the fluorinated carboxylic acid compound to the cationic surfactant is (2-12):1.

[0044] In some preferred embodiments, the mass ratio of the fluorinated carboxylic acid compound to the cationic surfactant is (3-8):1.

[0045] The inventors discovered that by adjusting the mass ratio of fluorinated carboxylic acid compounds to cationic surfactants, the rate difference between the bottom and top of the silica bevel can be effectively altered. Through extensive research, they found that when the mass ratio of fluorinated carboxylic acid compounds to cationic surfactants is in the range of (2–12):1, the fluorinated carboxylic acid compounds and cationic surfactants work synergistically to better reduce the rate difference between the bottom and top of the silica bevel and alleviate the severity of the bevel's two-segment angle. When the mass ratio is in the range of (3–8):1, it is more conducive to eliminating the silica bevel's two-segment angle and obtaining the required etching profile and parameters.

[0046] In some embodiments, the etching solution further includes a corrosion inhibitor, which includes one or more of thiourea, diphenylthiourea, methylbenzotriazole, benzotriazole, 5-aminotetrazole, 5-methyltetrazole, and 8-hydroxyquinoline.

[0047] Specifically, corrosion inhibitors primarily work by forming a complex with the surface of metals such as aluminum alloys, thereby significantly reducing the corrosive effect of the etching solution on the etching equipment. These metals include aluminum, copper, molybdenum, and titanium.

[0048] In some preferred embodiments, the corrosion inhibitor is diphenylthiourea.

[0049] In some embodiments, the corrosion inhibitor has a mass content of 0.10% to 0.50%.

[0050] Specifically, the mass content of the corrosion inhibitor can be 0.1%, 0.15%, 0.2%, 0.25%, 0.3%, 0.35%, 0.4%, 0.45%, or 0.5%, as long as the mass content is within the range of 0.10% to 0.50%. Adding a corrosion inhibitor with a mass content of 0.10% to 0.50% can significantly improve the corrosive effect of the etching solution on aluminum alloys and other materials, while showing no corrosion to metals such as aluminum alloys, copper, titanium, and molybdenum, thus protecting the etching equipment. If the corrosion inhibitor content is below 0.1%, a complex layer cannot be formed on the surface of metals such as aluminum alloys, and a good protective effect cannot be achieved. If the corrosion inhibitor content is above 0.5%, the inhibitory effect is not significantly improved, resulting in waste and increasing the cost of the etching solution.

[0051] In some preferred embodiments, the corrosion inhibitor has a mass percentage content of 0.15% to 0.30%.

[0052] The specific embodiments of the present invention will be further explained and illustrated below through examples, but this does not mean that the scope of protection of the present invention is limited to the scope described in the examples.

[0053] Example

[0054] The BOE etching solution in this embodiment consists of 1%–10% hydrogen fluoride, 15%–38% ammonium fluoride, 0.05%–0.30% etching promoter, 0.005%–0.050% cationic surfactant, and 0.10%–0.50% corrosion inhibitor by mass. The specific dosage configuration is shown in Table 1, and a comparative experiment was designed. The percentages in Table 1 are by mass percentages, and the balance is water.

[0055] Taking an OLED glass substrate as the research object, the BOE etching solution prepared in the example was used to etch the silicon oxide layer deposited on the glass substrate.

[0056] Etching process: The etching temperature is 30℃, the etching time is 50% OE (i.e., the etching time is 1.5 times the time required to completely etch the silicon oxide layer), rinse with pure water, and then blow dry with nitrogen.

[0057] Evaluation was conducted using surface tension, etching rate, cone angle, CD loss, severity of the bevel angle, and changes in aluminum alloy quality.

[0058] The morphology of the glass substrate was characterized by SEM, and the corrosion effect of the solution on the aluminum alloy was evaluated by measuring the mass change of the aluminum alloy within 30 days through immersion experiments. The results of the examples and comparative examples are shown in Table 1.

[0059] The dosages for each group in this embodiment and the comparative example are shown in Table 1, and the SEM characterization results are as follows: Figure 2 , 3 As shown in Figure 4, where, Figure 1 This is the SEM image before etching.

[0060] Table 1. Preparation and Performance Evaluation of Etching Solution

[0061]

[0062]

[0063] pass Figure 1-4 As shown in Table 1, compared with Comparative Example 1, Example 1, which did not contain fluorinated carboxylic acid compounds, cationic surfactants, or corrosion inhibitors, exhibited a high etching rate and severe two-segment angles on the etched surface. This indicates that the etching solution in Example 1 can reduce the etching rate, improve the two-segment angles on the etched surface, and inhibit aluminum alloy corrosion. Compared with Comparative Example 5, Example 1, which contained cationic surfactants and corrosion inhibitors but not fluorinated carboxylic acid compounds, still showed severe two-segment angles. This suggests that even with only cationic surfactants, the etching rate difference between the top and bottom of the silicon oxide sloping surface remained significant, resulting in severe two-segment angles. Compared with Comparative Example 4, Example 1, which did not contain cationic surfactants, still showed severe two-segment angles. Through Examples 1, 1, and 4-5, it is evident that adding only fluorinated carboxylic acid compounds or only cationic surfactants to the etching solution is insufficient to reduce the rate difference between the top and bottom of the silicon oxide sloping surface. This indicates that the fluorinated carboxylic acid compounds and cationic surfactants in the etching solution work synergistically to reduce the rate difference between the top and bottom of the silicon oxide sloping surface, thereby eliminating the two-segment angles.

[0064] As shown in Example 1 and Comparative Example 2, the addition of 0.3% citric acid to Comparative Example 2 resulted in severe two-segment angles on the bevel. It is speculated that although the citric acid in Comparative Example 2 contains carboxylic acid groups, which can increase the etching rate, it lacks fluorinated carbon chains, meaning it cannot adsorb onto one side of the photoresist. Therefore, it cannot specifically increase the etching rate at a particular point, angle, or surface, and thus cannot eliminate the two-segment angles on the bevel. Comparing Example 1 and Comparative Example 3, the addition of anionic surfactants to Comparative Example 3 resulted in severe two-segment angles on the bevel. It is speculated that the silicon oxide surface carries a negative charge, and cationic surfactants can adhere to its surface through electrostatic adsorption, thereby increasing the mass transfer resistance of the etching solution and inhibiting the etching rate. This indicates that only when fluorinated carboxylic acid compounds synergistically work with cationic surfactants can they reduce the rate difference between the top and bottom of the silicon oxide bevel and eliminate the two-segment angles.

[0065] In Examples 1, 2, and 3, the mass ratio of the fluorinated carboxylic acid compound to the cationic surfactant was in the range of (2-12):1, and no beveled double angle was observed. Comparing Example 2 and Example 6, the mass ratio of the fluorinated carboxylic acid compound to the cationic surfactant in Example 6 was 20, exceeding the range of (2-12):1 of this application, and the severity of the beveled double angle was slight. Comparing Example 7 and Example 3, the mass ratio of the fluorinated carboxylic acid compound to the cationic surfactant in Example 7 was 1, lower than the range of (2-12):1 of this application, and the severity of the beveled double angle was slight. Through the comparison of Examples 1, 2, 3, 6, and 7, it is known that when the mass ratio of the fluorinated carboxylic acid compound to the cationic surfactant is in the range of (2-12):1, especially in the range of (3-8):1, the fluorinated carboxylic acid compound increases the etching rate at the top, while the cationic surfactant decreases the etching rate at the bottom. The synergistic effect of the fluorinated carboxylic acid compound and the cationic surfactant is better, more effectively eliminating the beveled double angle, while simultaneously increasing the overall etching rate and improving work efficiency. Comparative Example 6, compared with Example 1, shows... Figure 4As shown, a fluorinated carboxylic acid compound content higher than 0.3% does not significantly enhance the promoting effect on the top of the silicon oxide slope, but instead causes a large amount of waste and increases manufacturing costs; excessive fluorinated carboxylic acid compounds can also corrode the photoresist, affecting etching quality. Comparing Examples 1 and 5, changing the type of fluorinated carboxylic acid compound did not significantly increase the etching rate or surface tension, and the severity of the slope's two-segment angle remained unchanged. Comparing Examples 4 and 5, changing the type of cationic surfactant resulted in a slight change in surface tension, but the severity of the slope's two-segment angle remained unchanged; changing the type of corrosion inhibitor also improved the corrosive effect of the solution on aluminum alloys, etc. Examples 1, 4, and 5 demonstrate that the different types of fluorinated carboxylic acid compounds and cationic surfactants provided in this application all have the effect of synergistically reducing the rate difference between the top and bottom of the silicon oxide slope and eliminating the slope's two-segment angle; different types of corrosion inhibitors all have the same effect of inhibiting metal corrosion. Comparing Example 8 with Example 1, Example 8 did not add a corrosion inhibitor, and the change in aluminum alloy mass was larger, indicating that the corrosion inhibitor can improve the corrosive effect of the solution on aluminum alloys. In Example 8, an amine salt cationic surfactant was added, while in Example 1, a quaternary ammonium salt cationic surfactant was added. The overall etching rates were similar and there was no two-stage angle, indicating that the application of amine salt or quaternary ammonium salt cationic surfactants in the etching solution of this application has the same effect of suppressing the bottom etching rate.

[0066] The above description is only a preferred embodiment of the present invention and is not intended to limit the present invention. Any modifications, equivalent substitutions, and improvements made within the spirit and principles of the present invention should be included within the protection scope of the present invention.

Claims

1. A BOE etching solution for an oxide silicon layer, characterized by, The etching solution comprises hydrogen fluoride, ammonium fluoride, a fluorinated carboxylic acid compound, a cationic surfactant, and water. The fluorinated carboxylic acid compound has a mass percentage of 0.05% to 0.30%, and the cationic surfactant has a mass percentage of 0.005% to 0.050%. The mass ratio of the fluorinated carboxylic acid compound to the cationic surfactant is (2~12):1; The hydrogen fluoride has a mass content of 1% to 10%, and the ammonium fluoride has a mass content of 15% to 38%. The fluorinated carboxylic acid compound includes one or more of perfluorooctanoic acid, perfluorononanoic acid, 2-(N-ethylperfluorooctanesulfonylamino)acetic acid and 3-ethylperfluorooctanesulfonamide acetic acid; The cationic surfactant includes one or more of quaternary ammonium salt cationic surfactants or amine salt cationic surfactants.

2. The BOE etching solution for a silicon oxide layer according to claim 1, characterized by, The mass ratio of the fluorinated carboxylic acid compound to the cationic surfactant is (3~8):

1.

3. The BOE etching solution for silicon oxide layers according to claim 1, characterized in that, The quaternary ammonium salt cationic surfactant includes one or more of dodecyltrimethylammonium bromide, hexadecyltrimethylammonium bromide, octadecyltrimethylammonium bromide, dioctadecyldimethylammonium chloride, N,N,N-trimethyl-1-tetradecylammonium bromide, and polythionium chloride.

4. The BOE etching solution for silicon oxide layers according to claim 1, characterized in that, The amine salt cationic surfactant is N-oleoylsarcosine octadecylamine salt.

5. The BOE etching solution for silicon oxide layers according to claim 1, characterized in that, The BOE etching solution also includes a corrosion inhibitor, which includes one or more of thiourea, diphenylthiourea, methylbenzotriazole, benzotriazole, 5-aminotetrazole, 5-methyltetrazole, and 8-hydroxyquinoline. The corrosion inhibitor has a mass percentage content of 0.10% to 0.50%.

6. The BOE etching solution for silicon oxide layers according to claim 5, characterized in that, The corrosion inhibitor is diphenylthiourea; The corrosion inhibitor has a mass percentage content of 0.15% to 0.30%.

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